BRPI0413778A - sistema de resina modificada contendo enchimento que tem alto tg, transparência e boa confiabilidade em aplicações de enchimento no nìvel de wafer - Google Patents
sistema de resina modificada contendo enchimento que tem alto tg, transparência e boa confiabilidade em aplicações de enchimento no nìvel de waferInfo
- Publication number
- BRPI0413778A BRPI0413778A BRPI0413778-7A BRPI0413778A BRPI0413778A BR PI0413778 A BRPI0413778 A BR PI0413778A BR PI0413778 A BRPI0413778 A BR PI0413778A BR PI0413778 A BRPI0413778 A BR PI0413778A
- Authority
- BR
- Brazil
- Prior art keywords
- modified resin
- transparency
- good reliability
- containing filler
- filler system
- Prior art date
Links
- 239000000945 filler Substances 0.000 title abstract 2
- 229920005989 resin Polymers 0.000 title abstract 2
- 239000011347 resin Substances 0.000 title abstract 2
- 239000011342 resin composition Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000008119 colloidal silica Substances 0.000 abstract 1
- 239000008393 encapsulating agent Substances 0.000 abstract 1
- 239000003822 epoxy resin Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229920000647 polyepoxide Polymers 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/04—Ingredients treated with organic substances
- C08K9/06—Ingredients treated with organic substances with silicon-containing compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
- C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
- C09C1/28—Compounds of silicon
- C09C1/30—Silicic acid
- C09C1/3081—Treatment with organo-silicon compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01087—Francium [Fr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Organic Chemistry (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Paints Or Removers (AREA)
Abstract
"SISTEMA DE RESINA MODIFICADA CONTENDO ENCHIMENTO QUE TEM ALTO Tg, TRANSPARêNCIA E BOA CONFIABILIDADE EM APLICAçõES DE ENCHIMENTO NO NìVEL DE WAFER". Um material de enchimento de resina modificada de solvente compreendendo uma resina em combinação com um enchimento de silica coloidal functionalizada e um solvente para formar uma composição de resina transparente em estágio B, a qual pode ser curada para formar uma reina de baixo CTE e um alto Tg de termosete. Configurações da descrição incluem um enchimento de nível wafer e um chip eletrónico encapsulado.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/654,378 US20050049334A1 (en) | 2003-09-03 | 2003-09-03 | Solvent-modified resin system containing filler that has high Tg, transparency and good reliability in wafer level underfill applications |
PCT/US2004/024849 WO2005024939A1 (en) | 2003-09-03 | 2004-08-03 | SOLVENT-MODIFIED RESIN SYSTEM CONTAINING FILLER THAT HAS HIGH Tg, TRANSPARENCY AND GOOD RELIABILITY IN WAFER LEVEL UNDERFILL APPLICATIONS |
Publications (1)
Publication Number | Publication Date |
---|---|
BRPI0413778A true BRPI0413778A (pt) | 2006-10-31 |
Family
ID=34218078
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BRPI0413778-7A BRPI0413778A (pt) | 2003-09-03 | 2004-08-03 | sistema de resina modificada contendo enchimento que tem alto tg, transparência e boa confiabilidade em aplicações de enchimento no nìvel de wafer |
Country Status (14)
Country | Link |
---|---|
US (2) | US20050049334A1 (pt) |
EP (1) | EP1665376A1 (pt) |
JP (1) | JP2007504321A (pt) |
KR (1) | KR20060093707A (pt) |
CN (2) | CN1875478A (pt) |
AT (1) | ATE446589T1 (pt) |
AU (1) | AU2004271534A1 (pt) |
BR (1) | BRPI0413778A (pt) |
CA (1) | CA2537828A1 (pt) |
DE (1) | DE602004023734D1 (pt) |
MX (1) | MXPA06002522A (pt) |
RU (1) | RU2358353C2 (pt) |
WO (1) | WO2005024939A1 (pt) |
ZA (2) | ZA200602267B (pt) |
Families Citing this family (34)
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US20050170188A1 (en) * | 2003-09-03 | 2005-08-04 | General Electric Company | Resin compositions and methods of use thereof |
US20060147719A1 (en) * | 2002-11-22 | 2006-07-06 | Slawomir Rubinsztajn | Curable composition, underfill, and method |
US7022410B2 (en) * | 2003-12-16 | 2006-04-04 | General Electric Company | Combinations of resin compositions and methods of use thereof |
US20040102529A1 (en) * | 2002-11-22 | 2004-05-27 | Campbell John Robert | Functionalized colloidal silica, dispersions and methods made thereby |
US20050266263A1 (en) * | 2002-11-22 | 2005-12-01 | General Electric Company | Refractory solid, adhesive composition, and device, and associated method |
US7446136B2 (en) * | 2005-04-05 | 2008-11-04 | Momentive Performance Materials Inc. | Method for producing cure system, adhesive system, and electronic device |
US7405246B2 (en) * | 2005-04-05 | 2008-07-29 | Momentive Performance Materials Inc. | Cure system, adhesive system, electronic device |
US7339834B2 (en) | 2005-06-03 | 2008-03-04 | Sandisk Corporation | Starting program voltage shift with cycling of non-volatile memory |
DE102005040126A1 (de) * | 2005-08-25 | 2007-03-01 | Altana Electrical Insulation Gmbh | Überzugsmasse |
TWI305389B (en) * | 2005-09-05 | 2009-01-11 | Advanced Semiconductor Eng | Matrix package substrate process |
US7551482B2 (en) | 2006-12-27 | 2009-06-23 | Sandisk Corporation | Method for programming with initial programming voltage based on trial |
US7570520B2 (en) | 2006-12-27 | 2009-08-04 | Sandisk Corporation | Non-volatile storage system with initial programming voltage based on trial |
US8344048B2 (en) * | 2007-07-11 | 2013-01-01 | Nissan Chemical Industries, Ltd. | Epoxy resin-forming liquid preparation containing inorganic particle |
EP2145928B1 (de) * | 2008-07-18 | 2017-09-13 | Evonik Degussa GmbH | Dispersion von hydrophobierten Siliciumdioxidpartikeln und Granulat hiervon |
DE102008048874A1 (de) * | 2008-09-25 | 2010-04-08 | Siemens Aktiengesellschaft | Beschichtungen für elektronische Schaltungen |
WO2010043638A2 (en) * | 2008-10-15 | 2010-04-22 | Basf Se | Curable epoxide formulation containing silica |
JP5353629B2 (ja) * | 2008-11-14 | 2013-11-27 | 信越化学工業株式会社 | 熱硬化性樹脂組成物 |
JP5638812B2 (ja) * | 2010-02-01 | 2014-12-10 | 株式会社ダイセル | 硬化性エポキシ樹脂組成物 |
KR20130039760A (ko) * | 2010-06-25 | 2013-04-22 | 다우 글로벌 테크놀로지스 엘엘씨 | 경화성 에폭시 수지 조성물 및 이로부터 제조된 복합체 |
US8070045B1 (en) * | 2010-12-02 | 2011-12-06 | Rohm And Haas Electronic Materials Llc | Curable amine flux composition and method of soldering |
US8070046B1 (en) * | 2010-12-02 | 2011-12-06 | Rohm And Haas Electronic Materials Llc | Amine flux composition and method of soldering |
JP5598343B2 (ja) * | 2011-01-17 | 2014-10-01 | 信越化学工業株式会社 | 半導体封止用液状エポキシ樹脂組成物及び半導体装置 |
US8531821B2 (en) * | 2011-01-28 | 2013-09-10 | Raytheon Company | System for securing a semiconductor device to a printed circuit board |
JP5685451B2 (ja) * | 2011-02-01 | 2015-03-18 | アイカ工業株式会社 | 難燃化用組成物及び化粧板 |
CN102876179B (zh) * | 2011-07-13 | 2015-03-11 | 中国科学院化学研究所 | 用于喷墨打印直接制版用铝版基的涂料及其制法和应用 |
KR20130059291A (ko) | 2011-11-28 | 2013-06-05 | 닛토덴코 가부시키가이샤 | 언더필재 및 반도체 장치의 제조 방법 |
JP6692758B2 (ja) * | 2014-02-24 | 2020-05-13 | ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング | 熱伝導性プリアプライアンダーフィル組成物およびその使用 |
WO2016134257A1 (en) * | 2015-02-19 | 2016-08-25 | Lixter Biotechnology, Inc. | Oxabicycloheptanes and oxabicycloheptenes for the treatment of depressive and stress disorders |
US10703939B2 (en) * | 2016-08-10 | 2020-07-07 | Panasonic Intellectual Property Management Co., Ltd. | Acrylic composition for sealing, sheet material, multilayer sheet, cured product, semiconductor device and method for manufacturing semiconductor device |
TWI606565B (zh) * | 2016-08-31 | 2017-11-21 | 金寶電子工業股份有限公司 | 封裝結構及其製作方法 |
TWI654218B (zh) | 2018-01-08 | 2019-03-21 | 財團法人工業技術研究院 | 樹脂組合物與導熱材料的形成方法 |
CN109504327A (zh) * | 2018-11-13 | 2019-03-22 | 烟台德邦科技有限公司 | 一种高Tg高可靠性的环氧树脂封装导电胶及其制备方法 |
CN114149725B (zh) * | 2021-11-25 | 2022-07-08 | 中国船舶重工集团公司第七二五研究所 | 一种破冰船用破冰涂料及其制备方法 |
CN116814174B (zh) * | 2023-08-24 | 2023-11-28 | 佛山市奥川顺新材料实业有限公司 | 一种复合型pet保护膜及其制备方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4217438A (en) * | 1978-12-15 | 1980-08-12 | General Electric Company | Polycarbonate transesterification process |
JPH04154861A (ja) * | 1990-10-19 | 1992-05-27 | Toshiba Silicone Co Ltd | 樹脂組成物 |
US5307438A (en) * | 1992-08-13 | 1994-04-26 | Minnesota Mining And Manufacturing Company | Index matching compositions with improved DNG/DT |
JPH06232296A (ja) * | 1993-02-05 | 1994-08-19 | Nitto Denko Corp | 半導体装置 |
JPH1176928A (ja) * | 1997-09-03 | 1999-03-23 | Asahi Glass Co Ltd | 透明被覆成形品の製造方法 |
US6210790B1 (en) * | 1998-07-15 | 2001-04-03 | Rensselaer Polytechnic Institute | Glass-like composites comprising a surface-modified colloidal silica and method of making thereof |
US6576718B1 (en) * | 1999-10-05 | 2003-06-10 | General Electric Company | Powder coating of thermosetting resin(s) and poly(phenylene ethers(s)) |
CN1156533C (zh) * | 1999-10-06 | 2004-07-07 | 日东电工株式会社 | 半导体密封用树脂组合物和使用它的半导体装置及制法 |
JP4633214B2 (ja) * | 1999-12-08 | 2011-02-16 | 富士通株式会社 | エポキシ樹脂組成物 |
US6578718B2 (en) * | 2000-05-01 | 2003-06-17 | Raymond H. Levy | Paint chip display system |
US6548189B1 (en) * | 2001-10-26 | 2003-04-15 | General Electric Company | Epoxy adhesive |
US6833629B2 (en) * | 2001-12-14 | 2004-12-21 | National Starch And Chemical Investment Holding Corporation | Dual cure B-stageable underfill for wafer level |
US20030164555A1 (en) * | 2002-03-01 | 2003-09-04 | Tong Quinn K. | B-stageable underfill encapsulant and method for its application |
US7037399B2 (en) * | 2002-03-01 | 2006-05-02 | National Starch And Chemical Investment Holding Corporation | Underfill encapsulant for wafer packaging and method for its application |
CN100521869C (zh) * | 2002-05-23 | 2009-07-29 | 3M创新有限公司 | 纳米颗粒填充的底层填料 |
US20040102529A1 (en) * | 2002-11-22 | 2004-05-27 | Campbell John Robert | Functionalized colloidal silica, dispersions and methods made thereby |
US20040101688A1 (en) * | 2002-11-22 | 2004-05-27 | Slawomir Rubinsztajn | Curable epoxy compositions, methods and articles made therefrom |
JP4481672B2 (ja) * | 2003-02-07 | 2010-06-16 | 株式会社日本触媒 | 半導体封止材用微粒子および半導体封止用樹脂組成物 |
-
2003
- 2003-09-03 US US10/654,378 patent/US20050049334A1/en not_active Abandoned
- 2003-12-16 US US10/737,943 patent/US20050049352A1/en not_active Abandoned
-
2004
- 2004-08-03 BR BRPI0413778-7A patent/BRPI0413778A/pt not_active IP Right Cessation
- 2004-08-03 EP EP04779800A patent/EP1665376A1/en not_active Ceased
- 2004-08-03 AT AT04779798T patent/ATE446589T1/de not_active IP Right Cessation
- 2004-08-03 RU RU2006110520/28A patent/RU2358353C2/ru not_active IP Right Cessation
- 2004-08-03 WO PCT/US2004/024849 patent/WO2005024939A1/en active Application Filing
- 2004-08-03 MX MXPA06002522A patent/MXPA06002522A/es unknown
- 2004-08-03 CA CA002537828A patent/CA2537828A1/en not_active Abandoned
- 2004-08-03 CN CNA2004800326373A patent/CN1875478A/zh active Pending
- 2004-08-03 CN CNB2004800325173A patent/CN100490130C/zh not_active Expired - Fee Related
- 2004-08-03 AU AU2004271534A patent/AU2004271534A1/en not_active Abandoned
- 2004-08-03 DE DE602004023734T patent/DE602004023734D1/de active Active
- 2004-08-03 JP JP2006525333A patent/JP2007504321A/ja active Pending
- 2004-08-03 KR KR1020067006376A patent/KR20060093707A/ko not_active Application Discontinuation
-
2006
- 2006-03-17 ZA ZA200602267A patent/ZA200602267B/en unknown
- 2006-03-17 ZA ZA200602266A patent/ZA200602266B/en unknown
Also Published As
Publication number | Publication date |
---|---|
KR20060093707A (ko) | 2006-08-25 |
DE602004023734D1 (de) | 2009-12-03 |
CN1875477A (zh) | 2006-12-06 |
RU2006110520A (ru) | 2007-10-10 |
EP1665376A1 (en) | 2006-06-07 |
ZA200602266B (en) | 2007-07-25 |
US20050049352A1 (en) | 2005-03-03 |
WO2005024939A1 (en) | 2005-03-17 |
CN100490130C (zh) | 2009-05-20 |
CN1875478A (zh) | 2006-12-06 |
MXPA06002522A (es) | 2006-06-20 |
CA2537828A1 (en) | 2005-03-17 |
US20050049334A1 (en) | 2005-03-03 |
ATE446589T1 (de) | 2009-11-15 |
RU2358353C2 (ru) | 2009-06-10 |
ZA200602267B (en) | 2007-07-25 |
AU2004271534A1 (en) | 2005-03-17 |
JP2007504321A (ja) | 2007-03-01 |
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