BRPI0413775A - material de enchimento não fluivel tendo baixo coeficiente de expansão térmica e boa performance de fluxo de soldagem em bolhas - Google Patents

material de enchimento não fluivel tendo baixo coeficiente de expansão térmica e boa performance de fluxo de soldagem em bolhas

Info

Publication number
BRPI0413775A
BRPI0413775A BRPI0413775A BRPI0413775A BR PI0413775 A BRPI0413775 A BR PI0413775A BR PI0413775 A BRPI0413775 A BR PI0413775A BR PI0413775 A BRPI0413775 A BR PI0413775A
Authority
BR
Brazil
Prior art keywords
thermal expansion
flow performance
expansion coefficient
filler material
welding flow
Prior art date
Application number
Other languages
English (en)
Inventor
Slawomir Rubinsztajn
Sandeep Tonapi
John Campbell
Ananth Prabhakumar
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Publication of BRPI0413775A publication Critical patent/BRPI0413775A/pt

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/02—Layer formed of wires, e.g. mesh
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01066—Dysprosium [Dy]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01087—Francium [Fr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31511—Of epoxy ether

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Sealing Material Composition (AREA)

Abstract

"MATERIAL DE ENCHIMENTO NãO FLUIVEL TENDO BAIXO COEFICIENTE DE EXPANSãO TéRMICA E BOA PERFORMANCE DE FLUXO DE SOLDAGEM EM BOLHAS". Uma composição de enchimento não fluivel compreendendo uma resina epóxi em combinação com um endurecedor epóxi e reagentes opcionais e um enchimento de sílica coloidal tendo um tamanho de partícula variando de 1 mm a em torno de 250 nm. A sílica coloidal é funcionalizada com ao menos um agente de funcionalização organoacolxisilano e subseqüentemente funcionalizado com ao menos um agente de capeamento. O endurecedor epóxi inclui agentes de cura anidrido. Os reagentes opcionais incluem catalizadores de cura e monómeros contendo hidroxil. Os promotores de adesão, retardadores de chama e agentes desformantes também podem ser adicionados a composição. Um desenvolvimento adicional da presente descrição inclui dispositivos de estado sólido empacotados compreendendo as composições de enchimento.
BRPI0413775 2003-09-02 2004-09-01 material de enchimento não fluivel tendo baixo coeficiente de expansão térmica e boa performance de fluxo de soldagem em bolhas BRPI0413775A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/653,371 US20050048700A1 (en) 2003-09-02 2003-09-02 No-flow underfill material having low coefficient of thermal expansion and good solder ball fluxing performance
PCT/US2004/028404 WO2005021647A1 (en) 2003-09-02 2004-09-01 No-flow underfill material having low coefficient of thermal expansion and good solder ball fluxing performance

Publications (1)

Publication Number Publication Date
BRPI0413775A true BRPI0413775A (pt) 2006-10-31

Family

ID=34217877

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0413775 BRPI0413775A (pt) 2003-09-02 2004-09-01 material de enchimento não fluivel tendo baixo coeficiente de expansão térmica e boa performance de fluxo de soldagem em bolhas

Country Status (12)

Country Link
US (1) US20050048700A1 (pt)
EP (1) EP1664192A1 (pt)
JP (1) JP2007504336A (pt)
KR (1) KR20060132799A (pt)
CN (1) CN1875068A (pt)
AU (1) AU2004268147A1 (pt)
BR (1) BRPI0413775A (pt)
CA (1) CA2537688A1 (pt)
MX (1) MXPA06002463A (pt)
RU (1) RU2006110560A (pt)
WO (1) WO2005021647A1 (pt)
ZA (1) ZA200602272B (pt)

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US20040102529A1 (en) * 2002-11-22 2004-05-27 Campbell John Robert Functionalized colloidal silica, dispersions and methods made thereby
US20050266263A1 (en) * 2002-11-22 2005-12-01 General Electric Company Refractory solid, adhesive composition, and device, and associated method
MXPA06002594A (es) * 2003-09-03 2006-06-05 Gen Electric Composiciones de resina modificadas con solvente y sus metodos de uso.
TW200604269A (en) * 2004-04-06 2006-02-01 Showa Denko Kk Thermosetting composition and curing method thereof
US7446136B2 (en) * 2005-04-05 2008-11-04 Momentive Performance Materials Inc. Method for producing cure system, adhesive system, and electronic device
US10041176B2 (en) 2005-04-07 2018-08-07 Momentive Performance Materials Inc. No-rinse pretreatment methods and compositions
GB0512610D0 (en) * 2005-06-18 2005-07-27 Hexcel Composites Ltd Composite material
US8048819B2 (en) * 2005-06-23 2011-11-01 Momentive Performance Materials Inc. Cure catalyst, composition, electronic device and associated method
KR100833568B1 (ko) 2006-12-28 2008-05-30 제일모직주식회사 플립칩 패키지용 비도전성 페이스트 조성물
KR20100022960A (ko) * 2007-04-27 2010-03-03 스미토모 베이클리트 컴퍼니 리미티드 반도체 웨이퍼의 접합 방법 및 반도체 장치의 제조 방법
EP2199339B1 (en) * 2007-09-25 2014-11-05 Hitachi Chemical Co., Ltd. Thermosetting resin composition for light reflection, substrate made therefrom for photosemiconductor element mounting, process for producing the same, and photosemiconductor device
JP5493327B2 (ja) * 2007-12-18 2014-05-14 日立化成株式会社 封止充てん用樹脂組成物、並びに半導体装置及びその製造方法
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US8070046B1 (en) * 2010-12-02 2011-12-06 Rohm And Haas Electronic Materials Llc Amine flux composition and method of soldering
US8070045B1 (en) * 2010-12-02 2011-12-06 Rohm And Haas Electronic Materials Llc Curable amine flux composition and method of soldering
TW201329145A (zh) 2011-11-28 2013-07-16 Nitto Denko Corp 底層充填材料及半導體裝置之製造方法
KR101867955B1 (ko) * 2012-04-13 2018-06-15 삼성전자주식회사 패키지 온 패키지 장치 및 이의 제조 방법

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Also Published As

Publication number Publication date
AU2004268147A1 (en) 2005-03-10
EP1664192A1 (en) 2006-06-07
ZA200602272B (en) 2007-06-27
CN1875068A (zh) 2006-12-06
RU2006110560A (ru) 2007-10-10
JP2007504336A (ja) 2007-03-01
WO2005021647A1 (en) 2005-03-10
MXPA06002463A (es) 2006-06-20
US20050048700A1 (en) 2005-03-03
CA2537688A1 (en) 2005-03-10
KR20060132799A (ko) 2006-12-22

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Legal Events

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B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE AS 6A E 7A ANUIDADES.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO 8.6 PUBLICADO NA RPI 2159 DE 22/05/2012.