AU2001277755A1 - Device and method for processing substrate - Google Patents
Device and method for processing substrateInfo
- Publication number
- AU2001277755A1 AU2001277755A1 AU2001277755A AU7775501A AU2001277755A1 AU 2001277755 A1 AU2001277755 A1 AU 2001277755A1 AU 2001277755 A AU2001277755 A AU 2001277755A AU 7775501 A AU7775501 A AU 7775501A AU 2001277755 A1 AU2001277755 A1 AU 2001277755A1
- Authority
- AU
- Australia
- Prior art keywords
- processing substrate
- substrate
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/935—Gas flow control
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000245193 | 2000-08-11 | ||
JP2000-245193 | 2000-08-11 | ||
PCT/JP2001/006908 WO2002015243A1 (fr) | 2000-08-11 | 2001-08-10 | Dispositif et traitement de substrat |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001277755A1 true AU2001277755A1 (en) | 2002-02-25 |
Family
ID=18735763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001277755A Abandoned AU2001277755A1 (en) | 2000-08-11 | 2001-08-10 | Device and method for processing substrate |
Country Status (7)
Country | Link |
---|---|
US (1) | US6806211B2 (zh) |
EP (1) | EP1308992A4 (zh) |
KR (1) | KR100531629B1 (zh) |
CN (1) | CN1256755C (zh) |
AU (1) | AU2001277755A1 (zh) |
TW (1) | TW511185B (zh) |
WO (1) | WO2002015243A1 (zh) |
Families Citing this family (96)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE493368T1 (de) * | 2001-03-29 | 2011-01-15 | Toyota Chuo Kenkyusho Kk | Ein verfahren zum erzeugen einer hohlen struktur aus einer silizium-struktur |
CN1254854C (zh) * | 2001-12-07 | 2006-05-03 | 东京毅力科创株式会社 | 绝缘膜氮化方法、半导体装置及其制造方法、基板处理装置和基板处理方法 |
US7220312B2 (en) * | 2002-03-13 | 2007-05-22 | Micron Technology, Inc. | Methods for treating semiconductor substrates |
KR100753696B1 (ko) * | 2002-03-26 | 2007-08-30 | 동경 엘렉트론 주식회사 | 기판 처리 장치, 기판 처리 방법 및 고속 로터리 밸브 |
KR100810783B1 (ko) * | 2002-03-26 | 2008-03-06 | 동경 엘렉트론 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
JP4099092B2 (ja) | 2002-03-26 | 2008-06-11 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法、高速ロータリバルブ |
US7160577B2 (en) | 2002-05-02 | 2007-01-09 | Micron Technology, Inc. | Methods for atomic-layer deposition of aluminum oxides in integrated circuits |
JP2004047634A (ja) * | 2002-07-10 | 2004-02-12 | Tokyo Electron Ltd | 成膜方法及び成膜装置 |
US6921702B2 (en) | 2002-07-30 | 2005-07-26 | Micron Technology Inc. | Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics |
JP2004079753A (ja) * | 2002-08-16 | 2004-03-11 | Tokyo Electron Ltd | 半導体装置の製造方法 |
JP4113755B2 (ja) * | 2002-10-03 | 2008-07-09 | 東京エレクトロン株式会社 | 処理装置 |
US7101813B2 (en) | 2002-12-04 | 2006-09-05 | Micron Technology Inc. | Atomic layer deposited Zr-Sn-Ti-O films |
JP4180948B2 (ja) * | 2003-03-24 | 2008-11-12 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法、ガスノズル |
WO2004094694A2 (en) * | 2003-04-23 | 2004-11-04 | Genus, Inc. | Collection of unused precursors in ald |
US7537662B2 (en) | 2003-04-29 | 2009-05-26 | Asm International N.V. | Method and apparatus for depositing thin films on a surface |
US6784083B1 (en) * | 2003-06-03 | 2004-08-31 | Micron Technology, Inc. | Method for reducing physisorption during atomic layer deposition |
US7020981B2 (en) * | 2003-10-29 | 2006-04-04 | Asm America, Inc | Reaction system for growing a thin film |
JP4399517B2 (ja) * | 2004-01-05 | 2010-01-20 | 株式会社堀場製作所 | 成膜装置と成膜方法 |
US7309395B2 (en) * | 2004-03-31 | 2007-12-18 | Dielectric Systems, Inc. | System for forming composite polymer dielectric film |
JP2005322668A (ja) * | 2004-05-06 | 2005-11-17 | Renesas Technology Corp | 成膜装置および成膜方法 |
US20080017613A1 (en) * | 2004-07-09 | 2008-01-24 | Sekisui Chemical Co., Ltd. | Method for processing outer periphery of substrate and apparatus thereof |
JP4718141B2 (ja) * | 2004-08-06 | 2011-07-06 | 東京エレクトロン株式会社 | 薄膜形成方法及び薄膜形成装置 |
US7081421B2 (en) | 2004-08-26 | 2006-07-25 | Micron Technology, Inc. | Lanthanide oxide dielectric layer |
US7588988B2 (en) * | 2004-08-31 | 2009-09-15 | Micron Technology, Inc. | Method of forming apparatus having oxide films formed using atomic layer deposition |
US7494939B2 (en) | 2004-08-31 | 2009-02-24 | Micron Technology, Inc. | Methods for forming a lanthanum-metal oxide dielectric layer |
WO2006049055A1 (ja) * | 2004-11-01 | 2006-05-11 | Hitachi Kokusai Electric Inc. | 基板処理装置および半導体デバイスの製造方法 |
US7235501B2 (en) | 2004-12-13 | 2007-06-26 | Micron Technology, Inc. | Lanthanum hafnium oxide dielectrics |
US7560395B2 (en) | 2005-01-05 | 2009-07-14 | Micron Technology, Inc. | Atomic layer deposited hafnium tantalum oxide dielectrics |
KR100697280B1 (ko) * | 2005-02-07 | 2007-03-20 | 삼성전자주식회사 | 반도체 제조 설비의 압력 조절 방법 |
JP4790291B2 (ja) * | 2005-03-10 | 2011-10-12 | 東京エレクトロン株式会社 | 基板処理方法、記録媒体および基板処理装置 |
US7687409B2 (en) | 2005-03-29 | 2010-03-30 | Micron Technology, Inc. | Atomic layer deposited titanium silicon oxide films |
JP2006303152A (ja) * | 2005-04-20 | 2006-11-02 | Fuji Electric Holdings Co Ltd | エピタキシャル成膜装置およびエピタキシャル成膜方法 |
KR100717813B1 (ko) | 2005-06-30 | 2007-05-11 | 주식회사 하이닉스반도체 | 나노믹스드 유전막을 갖는 캐패시터 및 그의 제조 방법 |
US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
US8034727B2 (en) * | 2005-10-14 | 2011-10-11 | Nec Corporation | Method and apparatus for manufacturing semiconductor devices |
US7592251B2 (en) | 2005-12-08 | 2009-09-22 | Micron Technology, Inc. | Hafnium tantalum titanium oxide films |
US7972974B2 (en) | 2006-01-10 | 2011-07-05 | Micron Technology, Inc. | Gallium lanthanide oxide films |
US7709402B2 (en) | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
US20070218702A1 (en) * | 2006-03-15 | 2007-09-20 | Asm Japan K.K. | Semiconductor-processing apparatus with rotating susceptor |
US7727908B2 (en) | 2006-08-03 | 2010-06-01 | Micron Technology, Inc. | Deposition of ZrA1ON films |
US7605030B2 (en) | 2006-08-31 | 2009-10-20 | Micron Technology, Inc. | Hafnium tantalum oxynitride high-k dielectric and metal gates |
US7544604B2 (en) | 2006-08-31 | 2009-06-09 | Micron Technology, Inc. | Tantalum lanthanide oxynitride films |
US7759747B2 (en) | 2006-08-31 | 2010-07-20 | Micron Technology, Inc. | Tantalum aluminum oxynitride high-κ dielectric |
US7776765B2 (en) | 2006-08-31 | 2010-08-17 | Micron Technology, Inc. | Tantalum silicon oxynitride high-k dielectrics and metal gates |
KR20080027009A (ko) * | 2006-09-22 | 2008-03-26 | 에이에스엠지니텍코리아 주식회사 | 원자층 증착 장치 및 그를 이용한 다층막 증착 방법 |
JP4299863B2 (ja) * | 2007-01-22 | 2009-07-22 | エルピーダメモリ株式会社 | 半導体装置の製造方法 |
US8048226B2 (en) * | 2007-03-30 | 2011-11-01 | Tokyo Electron Limited | Method and system for improving deposition uniformity in a vapor deposition system |
US20080241384A1 (en) * | 2007-04-02 | 2008-10-02 | Asm Genitech Korea Ltd. | Lateral flow deposition apparatus and method of depositing film by using the apparatus |
JP2008311385A (ja) * | 2007-06-14 | 2008-12-25 | Hitachi High-Technologies Corp | 基板処理装置 |
JP5347294B2 (ja) * | 2007-09-12 | 2013-11-20 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
US7964040B2 (en) * | 2007-11-08 | 2011-06-21 | Applied Materials, Inc. | Multi-port pumping system for substrate processing chambers |
KR101376336B1 (ko) * | 2007-11-27 | 2014-03-18 | 한국에이에스엠지니텍 주식회사 | 원자층 증착 장치 |
US7655543B2 (en) * | 2007-12-21 | 2010-02-02 | Asm America, Inc. | Separate injection of reactive species in selective formation of films |
JP2009203488A (ja) * | 2008-02-26 | 2009-09-10 | Mitsui Eng & Shipbuild Co Ltd | 薄膜形成装置 |
US20100269365A1 (en) * | 2008-05-16 | 2010-10-28 | Miller Kenneth C | System and Method for Alternating Fluid Flow |
US8298628B2 (en) | 2008-06-02 | 2012-10-30 | Air Products And Chemicals, Inc. | Low temperature deposition of silicon-containing films |
CN102089848B (zh) * | 2008-07-09 | 2013-05-22 | 欧瑞康太阳能股份公司(特吕巴赫) | 远程等离子体清洗方法和用于应用所述方法的设备 |
JP5107185B2 (ja) * | 2008-09-04 | 2012-12-26 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置、成膜方法及びこの成膜方法を実行させるためのプログラムを記録した記録媒体 |
FI122940B (fi) * | 2009-02-09 | 2012-09-14 | Beneq Oy | Reaktiokammio |
CN102355855B (zh) | 2009-02-20 | 2014-09-10 | 欧姆龙健康医疗事业株式会社 | 生体信息测定装置、生体信息测定方法及体成分测定装置 |
JP4523661B1 (ja) * | 2009-03-10 | 2010-08-11 | 三井造船株式会社 | 原子層堆積装置及び薄膜形成方法 |
JP5181100B2 (ja) * | 2009-04-09 | 2013-04-10 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
JP5131240B2 (ja) * | 2009-04-09 | 2013-01-30 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
JP5560093B2 (ja) * | 2009-06-30 | 2014-07-23 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法及び基板製造方法 |
JP5287592B2 (ja) * | 2009-08-11 | 2013-09-11 | 東京エレクトロン株式会社 | 成膜装置 |
JP5257328B2 (ja) * | 2009-11-04 | 2013-08-07 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び記憶媒体 |
JP5396264B2 (ja) * | 2009-12-25 | 2014-01-22 | 東京エレクトロン株式会社 | 成膜装置 |
KR20120034341A (ko) * | 2010-10-01 | 2012-04-12 | 주식회사 원익아이피에스 | 기판처리장치의 세정방법 |
CN102468105B (zh) * | 2010-11-01 | 2015-09-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 电感耦合等离子体装置 |
US8133349B1 (en) * | 2010-11-03 | 2012-03-13 | Lam Research Corporation | Rapid and uniform gas switching for a plasma etch process |
JP5642531B2 (ja) * | 2010-12-22 | 2014-12-17 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
JP5631728B2 (ja) * | 2010-12-28 | 2014-11-26 | 株式会社アルバック | 絶縁膜形成方法、及び絶縁膜形成装置 |
US9512520B2 (en) * | 2011-04-25 | 2016-12-06 | Applied Materials, Inc. | Semiconductor substrate processing system |
US9062375B2 (en) * | 2011-08-17 | 2015-06-23 | Asm Genitech Korea Ltd. | Lateral flow atomic layer deposition apparatus and atomic layer deposition method using the same |
KR101984997B1 (ko) * | 2011-08-17 | 2019-09-04 | 에이에스엠케이 주식회사 | 수평 흐름 원자층 증착 장치 및 원자층 증착 방법 |
US20130113085A1 (en) * | 2011-11-04 | 2013-05-09 | Applied Materials, Inc. | Atomic Layer Deposition Of Films Using Precursors Containing Hafnium Or Zirconium |
JP2013151720A (ja) * | 2012-01-25 | 2013-08-08 | Ulvac Japan Ltd | 真空成膜装置 |
KR102030038B1 (ko) * | 2012-08-21 | 2019-10-10 | 세메스 주식회사 | 기판 처리 장치 |
WO2014158410A1 (en) * | 2013-03-13 | 2014-10-02 | Applied Materials, Inc | Acoustically-monitored semiconductor substrate processing systems and methods |
WO2014179014A1 (en) * | 2013-05-01 | 2014-11-06 | Applied Materials, Inc. | Inject and exhaust design for epi chamber flow manipulation |
JP5895929B2 (ja) * | 2013-12-25 | 2016-03-30 | ウシオ電機株式会社 | 光照射装置 |
KR102363899B1 (ko) | 2014-01-13 | 2022-02-15 | 어플라이드 머티어리얼스, 인코포레이티드 | 공간적인 원자 층 증착에 의한 자기-정렬 이중 패터닝 |
JP6020483B2 (ja) | 2014-02-14 | 2016-11-02 | トヨタ自動車株式会社 | 表面処理装置と表面処理方法 |
US9920425B2 (en) * | 2014-08-13 | 2018-03-20 | Toshiba Memory Corporation | Semiconductor manufacturing apparatus and manufacturing method of semiconductor device |
JP6062413B2 (ja) | 2014-11-28 | 2017-01-18 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法およびプログラム |
US9963782B2 (en) * | 2015-02-12 | 2018-05-08 | Asm Ip Holding B.V. | Semiconductor manufacturing apparatus |
US10961621B2 (en) * | 2015-06-04 | 2021-03-30 | Svagos Technik, Inc. | CVD reactor chamber with resistive heating and substrate holder |
US9625379B2 (en) * | 2015-07-15 | 2017-04-18 | International Business Machines Corporation | Gas sensor with integrated optics and reference cell |
JP5947435B1 (ja) * | 2015-08-27 | 2016-07-06 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体 |
KR102477302B1 (ko) * | 2015-10-05 | 2022-12-13 | 주성엔지니어링(주) | 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법 |
GB2564399A (en) * | 2017-07-06 | 2019-01-16 | Edwards Ltd | Improvements in or relating to pumping line arrangements |
JP6968993B2 (ja) | 2017-10-06 | 2021-11-24 | アプライド マテリアルズ インコーポレイテッドApplied Materials, Incorporated | 金属膜の選択的堆積のための方法及び前駆体 |
CN112368802A (zh) * | 2018-07-31 | 2021-02-12 | 应用材料公司 | 用于ald工艺的方法和设备 |
WO2020146047A1 (en) * | 2019-01-08 | 2020-07-16 | Applied Materials, Inc. | Pumping apparatus and method for substrate processing chambers |
US20220084794A1 (en) * | 2020-09-16 | 2022-03-17 | Applied Materials, Inc. | Plasma chamber with a multiphase rotating modulated cross-flow |
KR102522687B1 (ko) * | 2020-10-20 | 2023-04-18 | 에이피시스템 주식회사 | 박막 제조 장치 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3660179A (en) * | 1970-08-17 | 1972-05-02 | Westinghouse Electric Corp | Gaseous diffusion technique |
JPS4942858U (zh) * | 1972-07-19 | 1974-04-15 | ||
JPS5516624B2 (zh) | 1972-09-01 | 1980-05-06 | ||
US6113701A (en) * | 1985-02-14 | 2000-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method, and system |
JPH0230119A (ja) * | 1988-07-20 | 1990-01-31 | Matsushita Electric Ind Co Ltd | 気相成長装置 |
JP2712367B2 (ja) * | 1988-09-09 | 1998-02-10 | 富士通株式会社 | 薄膜の形成方法およびその装置 |
US5006363A (en) * | 1988-12-08 | 1991-04-09 | Matsushita Electric Industries Co., Ltd. | Plasma assited MO-CVD of perooskite dalectric films |
JP2734197B2 (ja) | 1990-11-21 | 1998-03-30 | 富士電機株式会社 | 気相成長装置 |
JP2790009B2 (ja) | 1992-12-11 | 1998-08-27 | 信越半導体株式会社 | シリコンエピタキシャル層の成長方法および成長装置 |
JP3338884B2 (ja) * | 1993-09-20 | 2002-10-28 | 株式会社日立製作所 | 半導体処理装置 |
JP3264096B2 (ja) | 1994-05-20 | 2002-03-11 | ソニー株式会社 | 横型気相成長装置および横型熱処理装置 |
JPH0982696A (ja) * | 1995-09-18 | 1997-03-28 | Toshiba Corp | 半導体装置の製造方法および半導体製造装置 |
JP3279466B2 (ja) | 1995-12-06 | 2002-04-30 | 株式会社日立製作所 | 半導体ウエハの処理装置及び半導体素子 |
US5994676A (en) * | 1996-01-31 | 1999-11-30 | Sgs-Thomson Microelectronics S.A. | Method for calibrating the temperature of an epitaxy reactor |
US5895530A (en) * | 1996-02-26 | 1999-04-20 | Applied Materials, Inc. | Method and apparatus for directing fluid through a semiconductor processing chamber |
US6132552A (en) * | 1998-02-19 | 2000-10-17 | Micron Technology, Inc. | Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor |
JPH11302829A (ja) * | 1998-04-16 | 1999-11-02 | Ebara Corp | 真空装置の真空室汚染防止装置 |
JP2000012470A (ja) | 1998-06-19 | 2000-01-14 | Shin Etsu Handotai Co Ltd | 気相成長装置 |
KR100433465B1 (ko) * | 1998-08-03 | 2004-05-31 | 닛본 덴끼 가부시끼가이샤 | 금속산화물유전체막의 기상성장방법 및 금속산화물유전체재료의 기상성장을 위한 장치 |
JP2000054145A (ja) | 1998-08-04 | 2000-02-22 | Komatsu Ltd | 表面処理装置 |
JP3980840B2 (ja) * | 2001-04-25 | 2007-09-26 | 東京エレクトロン株式会社 | 気相成長装置および気相成長膜形成方法 |
US6677250B2 (en) * | 2001-08-17 | 2004-01-13 | Micron Technology, Inc. | CVD apparatuses and methods of forming a layer over a semiconductor substrate |
-
2001
- 2001-08-10 CN CNB018140424A patent/CN1256755C/zh not_active Expired - Fee Related
- 2001-08-10 US US10/344,281 patent/US6806211B2/en not_active Expired - Fee Related
- 2001-08-10 EP EP01955661A patent/EP1308992A4/en not_active Withdrawn
- 2001-08-10 KR KR10-2003-7002013A patent/KR100531629B1/ko active IP Right Grant
- 2001-08-10 TW TW090119648A patent/TW511185B/zh not_active IP Right Cessation
- 2001-08-10 AU AU2001277755A patent/AU2001277755A1/en not_active Abandoned
- 2001-08-10 WO PCT/JP2001/006908 patent/WO2002015243A1/ja active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
TW511185B (en) | 2002-11-21 |
EP1308992A4 (en) | 2006-01-18 |
US6806211B2 (en) | 2004-10-19 |
US20040026037A1 (en) | 2004-02-12 |
KR100531629B1 (ko) | 2005-11-29 |
WO2002015243A1 (fr) | 2002-02-21 |
CN1446373A (zh) | 2003-10-01 |
EP1308992A1 (en) | 2003-05-07 |
CN1256755C (zh) | 2006-05-17 |
KR20030023750A (ko) | 2003-03-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU2001277755A1 (en) | Device and method for processing substrate | |
SG106599A1 (en) | Substrate processing apparatus and substrate processing method | |
SG94851A1 (en) | Substrate processing apparatus and substrate processing method | |
AU2001247753A1 (en) | Method and apparatus for integrated-battery devices | |
AU7458301A (en) | Information processing device and processing method | |
EP1130626A3 (en) | Method and apparatus for manufacturing semiconductor device | |
SG105487A1 (en) | Substrate processing apparatus and substrate processing method | |
AU2002222639A1 (en) | Processing method and processing apparatus | |
SG105523A1 (en) | Substrate processing system and substrate processing method | |
AU2003242422A1 (en) | Substrate processing device and substrate processing method | |
AU2002354143A1 (en) | Substrate processing method and substrate processing apparatus | |
AU2001294188A1 (en) | Device and method for manufacturing semiconductor | |
EP1255287A4 (en) | METHOD AND APPARATUS FOR TREATING SUBSTRATE | |
AU2003284537A1 (en) | Substrate processing method and substrate processing device | |
AU2001232960A1 (en) | Methods and apparatus for processing insulating substrates | |
AU5974700A (en) | Device for processing data and corresponding method | |
AU2002339366A1 (en) | Method and device for processing mail | |
SG91902A1 (en) | Substrate processing method and substrate processing apparatus | |
SG104267A1 (en) | Substrate processing apparatus and substrate processing method | |
AU2002219222A1 (en) | Device and method for changing lines | |
AU7248701A (en) | Method and device for processing sheet-like articles | |
AU2002220786A1 (en) | Method and device for making secure data processing | |
AU2001259609A1 (en) | Method and apparatus for sorting semiconductor devices | |
AU4065401A (en) | Device and method for ultrasonic processing | |
AU2002362799A1 (en) | Method for processing flat products and device for carrying out said method |