ATE557425T1 - Verfahren zum trennen von materialschichten - Google Patents
Verfahren zum trennen von materialschichtenInfo
- Publication number
- ATE557425T1 ATE557425T1 AT05731585T AT05731585T ATE557425T1 AT E557425 T1 ATE557425 T1 AT E557425T1 AT 05731585 T AT05731585 T AT 05731585T AT 05731585 T AT05731585 T AT 05731585T AT E557425 T1 ATE557425 T1 AT E557425T1
- Authority
- AT
- Austria
- Prior art keywords
- material layers
- separating material
- substrate
- layer
- sections
- Prior art date
Links
- 239000000463 material Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 230000001678 irradiating effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0732—Shaping the laser spot into a rectangular shape
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
- B23K26/0838—Devices involving movement of the workpiece in at least one axial direction by using an endless conveyor belt
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Led Devices (AREA)
- Laser Beam Processing (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Lasers (AREA)
- Element Separation (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US55745004P | 2004-03-29 | 2004-03-29 | |
US11/008,589 US7202141B2 (en) | 2004-03-29 | 2004-12-09 | Method of separating layers of material |
PCT/US2005/010412 WO2005094320A2 (en) | 2004-03-29 | 2005-03-29 | Method of separating layers of material using a laser beam |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE557425T1 true ATE557425T1 (de) | 2012-05-15 |
Family
ID=35061103
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT05731585T ATE557425T1 (de) | 2004-03-29 | 2005-03-29 | Verfahren zum trennen von materialschichten |
Country Status (8)
Country | Link |
---|---|
US (3) | US7202141B2 (de) |
EP (1) | EP1735837B1 (de) |
JP (1) | JP5053076B2 (de) |
KR (1) | KR100849779B1 (de) |
CN (1) | CN1973375B (de) |
AT (1) | ATE557425T1 (de) |
TW (1) | TWI278923B (de) |
WO (1) | WO2005094320A2 (de) |
Families Citing this family (150)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040140474A1 (en) * | 2002-06-25 | 2004-07-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device, method for fabricating the same and method for bonding the same |
US8319150B2 (en) * | 2004-07-09 | 2012-11-27 | General Electric Company | Continuous motion laser shock peening |
US7238589B2 (en) * | 2004-11-01 | 2007-07-03 | International Business Machines Corporation | In-place bonding of microstructures |
US20060124941A1 (en) * | 2004-12-13 | 2006-06-15 | Lee Jae S | Thin gallium nitride light emitting diode device |
US7378288B2 (en) * | 2005-01-11 | 2008-05-27 | Semileds Corporation | Systems and methods for producing light emitting diode array |
KR100638732B1 (ko) * | 2005-04-15 | 2006-10-30 | 삼성전기주식회사 | 수직구조 질화물 반도체 발광소자의 제조방법 |
TWI248222B (en) * | 2005-05-12 | 2006-01-21 | Univ Nat Central | Light emitting diode and manufacturing method thereof |
US8124454B1 (en) * | 2005-10-11 | 2012-02-28 | SemiLEDs Optoelectronics Co., Ltd. | Die separation |
WO2007050736A2 (en) * | 2005-10-26 | 2007-05-03 | Velox Semiconductor Corporation | Vertical structure semiconductor devices and method of fabricating the same |
US7471455B2 (en) * | 2005-10-28 | 2008-12-30 | Cymer, Inc. | Systems and methods for generating laser light shaped as a line beam |
JP2007184426A (ja) * | 2006-01-06 | 2007-07-19 | Shinko Electric Ind Co Ltd | 半導体装置の製造方法 |
KR100735488B1 (ko) * | 2006-02-03 | 2007-07-04 | 삼성전기주식회사 | 질화갈륨계 발광다이오드 소자의 제조방법 |
US7928462B2 (en) | 2006-02-16 | 2011-04-19 | Lg Electronics Inc. | Light emitting device having vertical structure, package thereof and method for manufacturing the same |
US8624157B2 (en) * | 2006-05-25 | 2014-01-07 | Electro Scientific Industries, Inc. | Ultrashort laser pulse wafer scribing |
EP2458652B1 (de) | 2006-06-23 | 2023-08-02 | LG Electronics Inc. | Verfahren zur Herstellung lichtemittierender Dioden mit vertikaler Topologie |
TWI298513B (en) * | 2006-07-03 | 2008-07-01 | Au Optronics Corp | Method for forming an array substrate |
US20080042149A1 (en) * | 2006-08-21 | 2008-02-21 | Samsung Electro-Mechanics Co., Ltd. | Vertical nitride semiconductor light emitting diode and method of manufacturing the same |
US20080054291A1 (en) * | 2006-08-31 | 2008-03-06 | Samsung Electronics Co., Ltd. | Vertical semiconductor light-emitting device and method of manufacturing the same |
US20080070378A1 (en) * | 2006-09-19 | 2008-03-20 | Jong-Souk Yeo | Dual laser separation of bonded wafers |
CN101517700B (zh) * | 2006-09-20 | 2014-04-16 | 伊利诺伊大学评议会 | 用于制造可转移半导体结构、器件和器件构件的松脱策略 |
US8921204B2 (en) | 2006-10-11 | 2014-12-30 | SemiLEDs Optoelectronics Co., Ltd. | Method for fabricating semiconductor dice by separating a substrate from semiconductor structures using multiple laser pulses |
US7508494B2 (en) * | 2006-12-22 | 2009-03-24 | Asml Netherlands B.V. | Lithographic apparatus and a subtrate table for exciting a shockwave in a substrate |
US7727790B2 (en) * | 2007-01-30 | 2010-06-01 | Goldeneye, Inc. | Method for fabricating light emitting diodes |
US20080220590A1 (en) * | 2007-03-06 | 2008-09-11 | Texas Instruments Incorporated | Thin wafer dicing using UV laser |
KR101364719B1 (ko) * | 2007-03-29 | 2014-02-20 | 서울바이오시스 주식회사 | 수직형 발광 다이오드 제조방법 |
US8163582B2 (en) * | 2007-04-23 | 2012-04-24 | Goldeneye, Inc. | Method for fabricating a light emitting diode chip including etching by a laser beam |
US20080280454A1 (en) * | 2007-05-09 | 2008-11-13 | Ya-Li Chen | Wafer recycling method using laser films stripping |
CN101086083B (zh) * | 2007-06-08 | 2011-05-11 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种制备三族氮化物衬底的方法 |
US20090140279A1 (en) * | 2007-12-03 | 2009-06-04 | Goldeneye, Inc. | Substrate-free light emitting diode chip |
SG153673A1 (en) * | 2007-12-10 | 2009-07-29 | Tinggi Tech Private Ltd | Fabrication of semiconductor devices |
TWI384658B (zh) * | 2008-05-08 | 2013-02-01 | High Power Optoelectronics Inc | Laser stripping method |
US8008174B2 (en) * | 2008-10-10 | 2011-08-30 | Alta Devices, Inc. | Continuous feed chemical vapor deposition |
US9070764B2 (en) | 2008-05-30 | 2015-06-30 | Alta Devices, Inc. | Epitaxial lift off stack having a pre-curved handle and methods thereof |
EP2281300A4 (de) * | 2008-05-30 | 2013-07-17 | Alta Devices Inc | Verfahren und vorrichtung für einen chemischen dampfabscheidungsreaktor |
CN101599418B (zh) * | 2008-06-02 | 2011-11-30 | 联胜光电股份有限公司 | 激光剥离方法 |
US7955951B2 (en) * | 2008-07-08 | 2011-06-07 | High Power Opto, Inc. | LED-laser lift-off method |
US7754511B2 (en) * | 2008-07-08 | 2010-07-13 | High Power Opto. Inc. | Laser lift-off method |
KR20100008656A (ko) * | 2008-07-16 | 2010-01-26 | 삼성전자주식회사 | 발광 소자 및 발광 장치의 제조 방법, 상기 제조 방법에의해 제조된 발광 소자 및 발광 장치 |
JP2010045117A (ja) * | 2008-08-11 | 2010-02-25 | Disco Abrasive Syst Ltd | 光デバイスウエーハの加工方法 |
JP2010045151A (ja) * | 2008-08-12 | 2010-02-25 | Disco Abrasive Syst Ltd | 光デバイスウエーハの加工方法 |
TW201018746A (en) * | 2008-10-10 | 2010-05-16 | Alta Devices Inc | Mesa etch method and composition for epitaxial lift off |
KR101018179B1 (ko) * | 2008-10-16 | 2011-02-28 | 삼성엘이디 주식회사 | Ⅲ족 질화물 반도체 기판의 패턴 형성 방법 및 ⅲ족 질화물반도체 발광소자의 제조 방법 |
CN101740331B (zh) * | 2008-11-07 | 2012-01-25 | 东莞市中镓半导体科技有限公司 | 利用固体激光器无损剥离GaN与蓝宝石衬底的方法 |
KR101025980B1 (ko) | 2008-11-28 | 2011-03-30 | 삼성엘이디 주식회사 | 질화물계 반도체 발광소자의 제조방법 |
KR20110099029A (ko) * | 2008-12-08 | 2011-09-05 | 알타 디바이씨즈, 인크. | 에피택셜 리프트 오프를 위한 다중 스택 증착 |
US8581263B2 (en) * | 2008-12-17 | 2013-11-12 | Palo Alto Research Center Incorporated | Laser-induced flaw formation in nitride semiconductors |
TW201030802A (en) * | 2008-12-17 | 2010-08-16 | Alta Devices Inc | Tape-based epitaxial lift off apparatuses and methods |
JP5607081B2 (ja) | 2009-02-27 | 2014-10-15 | アルタ デバイセズ,インコーポレイテッド | 蒸着およびエピタキシャルリフトオフプロセスのためのタイル状基板 |
KR101040012B1 (ko) * | 2009-03-16 | 2011-06-08 | 엘지이노텍 주식회사 | 반도체 소자 제조방법 |
US8609512B2 (en) * | 2009-03-27 | 2013-12-17 | Electro Scientific Industries, Inc. | Method for laser singulation of chip scale packages on glass substrates |
CN101879657B (zh) * | 2009-05-08 | 2016-06-29 | 东莞市中镓半导体科技有限公司 | 固体激光剥离设备和剥离方法 |
US8133803B2 (en) * | 2009-06-23 | 2012-03-13 | Academia Sinica | Method for fabricating semiconductor substrates and semiconductor devices |
JP4686625B2 (ja) * | 2009-08-03 | 2011-05-25 | 株式会社東芝 | 半導体発光装置の製造方法 |
CN101996943B (zh) * | 2009-08-18 | 2013-12-04 | 展晶科技(深圳)有限公司 | 材料层分离方法 |
CN102005517B (zh) * | 2009-08-26 | 2013-09-18 | 首尔Opto仪器股份有限公司 | 利用激光剥离技术制造发光二极管的方法和激光剥离装置 |
JP5534763B2 (ja) * | 2009-09-25 | 2014-07-02 | 株式会社東芝 | 半導体発光装置の製造方法及び半導体発光装置 |
US11393683B2 (en) | 2009-10-14 | 2022-07-19 | Utica Leaseco, Llc | Methods for high growth rate deposition for forming different cells on a wafer |
US9834860B2 (en) * | 2009-10-14 | 2017-12-05 | Alta Devices, Inc. | Method of high growth rate deposition for group III/V materials |
US8382943B2 (en) * | 2009-10-23 | 2013-02-26 | William George Clark | Method and apparatus for the selective separation of two layers of material using an ultrashort pulse source of electromagnetic radiation |
JP5507197B2 (ja) * | 2009-10-23 | 2014-05-28 | スタンレー電気株式会社 | 光半導体素子、光半導体素子の製造方法及び光半導体装置の製造方法 |
TWI381558B (zh) * | 2009-10-27 | 2013-01-01 | High Power Optoelectronics Inc | Method of laser emitting peeling of light emitting diodes |
CN102054767B (zh) * | 2009-11-03 | 2013-02-13 | 联胜光电股份有限公司 | 发光二极管激光剥离的方法 |
US9669613B2 (en) * | 2010-12-07 | 2017-06-06 | Ipg Photonics Corporation | Laser lift off systems and methods that overlap irradiation zones to provide multiple pulses of laser irradiation per location at an interface between layers to be separated |
CN102714150B (zh) | 2009-12-07 | 2016-01-20 | Ipg微***有限公司 | 激光剥离***及方法 |
WO2011069242A1 (en) * | 2009-12-09 | 2011-06-16 | Cooledge Lighting Inc. | Semiconductor dice transfer-enabling apparatus and method for manufacturing transfer-enabling apparatus |
EP2511942A1 (de) * | 2009-12-11 | 2012-10-17 | Sharp Kabushiki Kaisha | Verfahren zur herstellung eines halbleiterbauelements und halbleiterbauelement |
US20110151588A1 (en) * | 2009-12-17 | 2011-06-23 | Cooledge Lighting, Inc. | Method and magnetic transfer stamp for transferring semiconductor dice using magnetic transfer printing techniques |
US8334152B2 (en) * | 2009-12-18 | 2012-12-18 | Cooledge Lighting, Inc. | Method of manufacturing transferable elements incorporating radiation enabled lift off for allowing transfer from host substrate |
DE102010009015A1 (de) * | 2010-02-24 | 2011-08-25 | OSRAM Opto Semiconductors GmbH, 93055 | Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Halbleiterchips |
JP5612336B2 (ja) * | 2010-03-08 | 2014-10-22 | スタンレー電気株式会社 | 半導体発光素子の製造方法 |
JP5174064B2 (ja) * | 2010-03-09 | 2013-04-03 | 株式会社東芝 | 半導体発光装置および半導体発光装置の製造方法 |
JP5185308B2 (ja) | 2010-03-09 | 2013-04-17 | 株式会社東芝 | 半導体発光装置の製造方法 |
DE102010018032A1 (de) * | 2010-04-23 | 2011-10-27 | Osram Opto Semiconductors Gmbh | Verfahren und Vorrichtung zur Bearbeitung eines Werkstückes mit einem Laser |
US9190560B2 (en) | 2010-05-18 | 2015-11-17 | Agency For Science Technology And Research | Method of forming a light emitting diode structure and a light diode structure |
JP2012015150A (ja) * | 2010-06-29 | 2012-01-19 | Ushio Inc | レーザリフトオフ方法及びレーザリフトオフ装置 |
JP5747454B2 (ja) * | 2010-07-08 | 2015-07-15 | ウシオ電機株式会社 | レーザリフト方法およびレーザリフト装置 |
JP4948629B2 (ja) * | 2010-07-20 | 2012-06-06 | ウシオ電機株式会社 | レーザリフトオフ方法 |
JP5653110B2 (ja) * | 2010-07-26 | 2015-01-14 | 浜松ホトニクス株式会社 | チップの製造方法 |
JP4661989B1 (ja) * | 2010-08-04 | 2011-03-30 | ウシオ電機株式会社 | レーザリフトオフ装置 |
CN102376826B (zh) * | 2010-08-06 | 2014-08-06 | 晶元光电股份有限公司 | 半导体光电元件及其制作方法 |
FR2963985A1 (fr) * | 2010-08-18 | 2012-02-24 | St Microelectronics Tours Sas | Diode schottky verticale au nitrure de gallium |
KR101172791B1 (ko) | 2010-08-23 | 2012-08-09 | 주식회사 엘티에스 | 레이저 리프트오프 방법 및 레이저 리프트오프 장치 |
WO2012046478A1 (ja) * | 2010-10-06 | 2012-04-12 | ウシオ電機株式会社 | レーザリフトオフ方法及びレーザリフトオフ装置 |
JP2012089709A (ja) * | 2010-10-20 | 2012-05-10 | Disco Abrasive Syst Ltd | ワークの分割方法 |
US8154034B1 (en) | 2010-11-23 | 2012-04-10 | Invenlux Limited | Method for fabricating vertical light emitting devices and substrate assembly for the same |
JP5752933B2 (ja) * | 2010-12-17 | 2015-07-22 | 株式会社ディスコ | 光デバイスウエーハの加工方法 |
JP5878292B2 (ja) * | 2010-12-24 | 2016-03-08 | 株式会社ディスコ | 光デバイスウエーハの加工方法 |
JP5712700B2 (ja) * | 2011-03-14 | 2015-05-07 | ウシオ電機株式会社 | レーザリフトオフ装置 |
JP5240318B2 (ja) * | 2011-04-28 | 2013-07-17 | ウシオ電機株式会社 | レーザリフトオフ方法 |
US20140116327A1 (en) * | 2011-05-31 | 2014-05-01 | "Perfect Crystals" Limited Liability Company | Method and apparatus for fabricating free-standing group iii nitride crystals |
RU2469433C1 (ru) | 2011-07-13 | 2012-12-10 | Юрий Георгиевич Шретер | Способ лазерного отделения эпитаксиальной пленки или слоя эпитаксиальной пленки от ростовой подложки эпитаксиальной полупроводниковой структуры (варианты) |
CN102956762A (zh) * | 2011-08-26 | 2013-03-06 | 郑朝元 | Ⅲ-ⅴ族晶圆可重复进行磊晶制程的方法与构造 |
US10343899B2 (en) * | 2011-10-06 | 2019-07-09 | Ams Sensors Singapore Pte. Ltd. | Method for wafer-level manufacturing of objects and corresponding semi-finished products |
JP5878330B2 (ja) * | 2011-10-18 | 2016-03-08 | 株式会社ディスコ | レーザー光線の出力設定方法およびレーザー加工装置 |
JP5725430B2 (ja) * | 2011-10-18 | 2015-05-27 | 富士電機株式会社 | 固相接合ウエハの支持基板の剥離方法および半導体装置の製造方法 |
KR101293595B1 (ko) * | 2011-11-07 | 2013-08-13 | 디에이치케이솔루션(주) | 웨이퍼 다이싱 방법 및 그에 의해 제조되는 소자 |
US8716625B2 (en) * | 2012-02-03 | 2014-05-06 | Trumpf Werkzeugmaschinen Gmbh + Co. Kg | Workpiece cutting |
JP5500197B2 (ja) * | 2012-03-29 | 2014-05-21 | ウシオ電機株式会社 | レーザリフトオフ方法およびレーザリフトオフ装置 |
WO2013150427A1 (en) * | 2012-04-05 | 2013-10-10 | Koninklijke Philips N.V. | Led thin-film device partial singulation prior to substrate thinning or removal |
JP5996250B2 (ja) * | 2012-04-24 | 2016-09-21 | 株式会社ディスコ | リフトオフ方法 |
TWI480928B (zh) * | 2012-05-22 | 2015-04-11 | Nat Univ Chung Hsing | The manufacturing method of the semiconductor element and the epitaxial substrate used in the manufacturing method and the semi-finished product of the semiconductor device |
US10186458B2 (en) * | 2012-07-05 | 2019-01-22 | Infineon Technologies Ag | Component and method of manufacturing a component using an ultrathin carrier |
CN102800585B (zh) * | 2012-07-09 | 2015-09-09 | 厦门飞德利照明科技有限公司 | 一种发光二极管的电铸制造方法 |
TWI460891B (zh) * | 2012-08-17 | 2014-11-11 | Nat Univ Chung Hsing | Preparation method and product of vertical conduction type light emitting diode |
JP6050075B2 (ja) * | 2012-09-26 | 2016-12-21 | 株式会社オプトニクス精密 | 半導体デバイスの製造方法および半導体デバイス |
DE102012217957B4 (de) * | 2012-10-01 | 2014-10-09 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung einer Mikro-LED-Matrix |
US20150279945A1 (en) * | 2012-10-26 | 2015-10-01 | Daniel Francis | Semiconductor devices with improved reliability and operating life and methods of manufactuirng the same |
KR101878748B1 (ko) | 2012-12-20 | 2018-08-17 | 삼성전자주식회사 | 그래핀의 전사 방법 및 이를 이용한 소자의 제조 방법 |
CN103078017A (zh) * | 2012-12-26 | 2013-05-01 | 光达光电设备科技(嘉兴)有限公司 | Led外延结构及其制备方法 |
KR102077742B1 (ko) * | 2013-02-27 | 2020-02-14 | 삼성전자주식회사 | 반도체 요소 전사 방법 |
WO2014171076A1 (ja) | 2013-04-17 | 2014-10-23 | パナソニックIpマネジメント株式会社 | 化合物半導体装置およびその製造方法ならびに樹脂封止型半導体装置 |
JP2015002239A (ja) * | 2013-06-14 | 2015-01-05 | シャープ株式会社 | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 |
KR102037259B1 (ko) * | 2013-07-05 | 2019-10-29 | 삼성디스플레이 주식회사 | 기판 분리 장치 및 이를 이용한 기판 분리 방법 |
TWI576190B (zh) * | 2013-08-01 | 2017-04-01 | Ibm | 使用中段波長紅外光輻射燒蝕之晶圓剝離 |
US9171749B2 (en) | 2013-11-13 | 2015-10-27 | Globalfoundries U.S.2 Llc | Handler wafer removal facilitated by the addition of an amorphous carbon layer on the handler wafer |
WO2015077779A1 (en) * | 2013-11-25 | 2015-05-28 | The Board Of Trustees Of The Leland Stanford Junior University | Laser liftoff of epitaxial thin film structures |
CN117881215A (zh) | 2013-12-02 | 2024-04-12 | 株式会社半导体能源研究所 | 显示装置及其制造方法 |
US9397051B2 (en) * | 2013-12-03 | 2016-07-19 | Invensas Corporation | Warpage reduction in structures with electrical circuitry |
CN107431107B (zh) * | 2015-04-01 | 2020-07-24 | 歌尔股份有限公司 | 微发光二极管的转移方法、制造方法、装置和电子设备 |
DE102015006971A1 (de) | 2015-04-09 | 2016-10-13 | Siltectra Gmbh | Verfahren zum verlustarmen Herstellen von Mehrkomponentenwafern |
JP2017103406A (ja) * | 2015-12-04 | 2017-06-08 | 株式会社ディスコ | ウエーハの加工方法 |
JP2017103405A (ja) * | 2015-12-04 | 2017-06-08 | 株式会社ディスコ | ウエーハの加工方法 |
JP2017107921A (ja) * | 2015-12-07 | 2017-06-15 | 株式会社ディスコ | ウエーハの加工方法 |
KR102214510B1 (ko) * | 2016-01-18 | 2021-02-09 | 삼성전자 주식회사 | 기판 씨닝 장치, 이를 이용한 기판의 씨닝 방법, 및 반도체 패키지의 제조 방법 |
US20180033609A1 (en) * | 2016-07-28 | 2018-02-01 | QMAT, Inc. | Removal of non-cleaved/non-transferred material from donor substrate |
JP2018042208A (ja) * | 2016-09-09 | 2018-03-15 | 株式会社ディスコ | 表面弾性波デバイスチップの製造方法 |
JP6508153B2 (ja) * | 2016-09-21 | 2019-05-08 | 日亜化学工業株式会社 | 発光素子の製造方法 |
CN106328728B (zh) * | 2016-10-15 | 2017-08-04 | 凯盛光伏材料有限公司 | 一种铜铟镓硒薄膜发电玻璃激光刻划方法 |
CN106654814A (zh) * | 2017-03-09 | 2017-05-10 | 中国科学院合肥物质科学研究院 | 可用于晶化和剥离的两用准分子激光*** |
JP6980421B2 (ja) * | 2017-06-16 | 2021-12-15 | 株式会社ディスコ | ウエーハの加工方法 |
EP3417982A1 (de) | 2017-06-21 | 2018-12-26 | Heraeus Deutschland GmbH & Co. KG | Laserschneiden von metall-keramik-substraten |
CN107414289B (zh) * | 2017-07-27 | 2019-05-17 | 京东方科技集团股份有限公司 | 一种激光剥离方法及激光剥离*** |
JP6579397B2 (ja) | 2017-08-30 | 2019-09-25 | 日亜化学工業株式会社 | 発光素子の製造方法 |
JP7258414B2 (ja) * | 2018-08-28 | 2023-04-17 | 株式会社ディスコ | 光デバイスウェーハの加工方法 |
US11819806B1 (en) | 2018-10-15 | 2023-11-21 | Ampcera Inc. | Methods for manufacturing a solid state ionic conductive membrane on a macro porous support scaffold |
US11177498B1 (en) | 2018-10-15 | 2021-11-16 | Ampcera Inc. | Redox flow batteries, components for redox flow batteries and methods for manufacture thereof |
CN111318810B (zh) * | 2018-12-14 | 2021-08-24 | 成都辰显光电有限公司 | 一种激光剥离方法 |
CN111326409B (zh) * | 2018-12-14 | 2023-01-31 | 云谷(固安)科技有限公司 | 激光剥离方法和蓝宝石衬底上发光二极管器件外延结构 |
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
CN109746568A (zh) * | 2019-01-30 | 2019-05-14 | 大族激光科技产业集团股份有限公司 | 一种激光加工***及激光加工方法 |
KR102167268B1 (ko) * | 2019-02-11 | 2020-10-19 | (주)에스티아이 | 불량 led 제거 장치 |
US11600853B1 (en) | 2019-05-14 | 2023-03-07 | Ampcera Inc. | Systems and methods for storing, transporting, and handling of solid-state electrolytes |
US10611052B1 (en) * | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
US20210066547A1 (en) | 2019-08-28 | 2021-03-04 | Tslc Corporation | Semiconductor Components And Semiconductor Structures And Methods Of Fabrication |
TWI783233B (zh) * | 2020-06-08 | 2022-11-11 | 勤友光電股份有限公司 | 用於分離工件的雷射剝離方法 |
CN114833460A (zh) * | 2021-01-14 | 2022-08-02 | 大族激光科技产业集团股份有限公司 | 刚玉加工方法 |
KR20230147708A (ko) | 2021-04-30 | 2023-10-23 | 신에츠 엔지니어링 가부시키가이샤 | 전사 장치 및 전사 방법 |
TWI825955B (zh) * | 2022-08-29 | 2023-12-11 | 錼創顯示科技股份有限公司 | 修整微型電子元件的方法與裝置 |
Family Cites Families (81)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3808550A (en) * | 1969-12-15 | 1974-04-30 | Bell Telephone Labor Inc | Apparatuses for trapping and accelerating neutral particles |
US3959045A (en) * | 1974-11-18 | 1976-05-25 | Varian Associates | Process for making III-V devices |
US4345967A (en) * | 1980-03-04 | 1982-08-24 | Cook Melvin S | Method of producing thin single-crystal sheets |
US4396456A (en) * | 1981-12-21 | 1983-08-02 | Cook Melvin S | Method of peeling epilayers |
US4448636A (en) * | 1982-06-02 | 1984-05-15 | Texas Instruments Incorporated | Laser assisted lift-off |
DE3508469A1 (de) | 1985-03-09 | 1986-09-11 | Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn | Verfahren zum strukturieren von auf einem transparenten substrat aufgebrachten schichtfolgen |
JPS62171167A (ja) * | 1986-01-23 | 1987-07-28 | Mitsubishi Electric Corp | 太陽電池の製造方法 |
US4883561A (en) * | 1988-03-29 | 1989-11-28 | Bell Communications Research, Inc. | Lift-off and subsequent bonding of epitaxial films |
US4846931A (en) * | 1988-03-29 | 1989-07-11 | Bell Communications Research, Inc. | Method for lifting-off epitaxial films |
JP3026087B2 (ja) * | 1989-03-01 | 2000-03-27 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体の気相成長方法 |
DE3927090A1 (de) * | 1989-08-17 | 1991-02-21 | Freudenberg Carl Fa | Faerbbare polyester-bmc-masse |
US5151389A (en) * | 1990-09-10 | 1992-09-29 | Rockwell International Corporation | Method for dicing semiconductor substrates using an excimer laser beam |
JP2593960B2 (ja) * | 1990-11-29 | 1997-03-26 | シャープ株式会社 | 化合物半導体発光素子とその製造方法 |
US5300788A (en) * | 1991-01-18 | 1994-04-05 | Kopin Corporation | Light emitting diode bars and arrays and method of making same |
US5290393A (en) * | 1991-01-31 | 1994-03-01 | Nichia Kagaku Kogyo K.K. | Crystal growth method for gallium nitride-based compound semiconductor |
US5262347A (en) * | 1991-08-14 | 1993-11-16 | Bell Communications Research, Inc. | Palladium welding of a semiconductor body |
FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
JP2666228B2 (ja) * | 1991-10-30 | 1997-10-22 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体発光素子 |
US5827751A (en) * | 1991-12-06 | 1998-10-27 | Picogiga Societe Anonyme | Method of making semiconductor components, in particular on GaAs of InP, with the substrate being recovered chemically |
US5171712A (en) * | 1991-12-20 | 1992-12-15 | Vlsi Technology, Inc. | Method of constructing termination electrodes on yielded semiconductor die by visibly aligning the die pads through a transparent substrate |
JPH05235312A (ja) * | 1992-02-19 | 1993-09-10 | Fujitsu Ltd | 半導体基板及びその製造方法 |
US5465009A (en) * | 1992-04-08 | 1995-11-07 | Georgia Tech Research Corporation | Processes and apparatus for lift-off and bonding of materials and devices |
US5286335A (en) * | 1992-04-08 | 1994-02-15 | Georgia Tech Research Corporation | Processes for lift-off and deposition of thin film materials |
US5401983A (en) * | 1992-04-08 | 1995-03-28 | Georgia Tech Research Corporation | Processes for lift-off of thin film materials or devices for fabricating three dimensional integrated circuits, optical detectors, and micromechanical devices |
US5376580A (en) * | 1993-03-19 | 1994-12-27 | Hewlett-Packard Company | Wafer bonding of light emitting diode layers |
US5552345A (en) * | 1993-09-22 | 1996-09-03 | Harris Corporation | Die separation method for silicon on diamond circuit structures |
US5479222A (en) * | 1993-11-15 | 1995-12-26 | Volk; Donald A. | Indirect ophthalmoscopy lens system and adapter lenses |
US5846844A (en) * | 1993-11-29 | 1998-12-08 | Toyoda Gosei Co., Ltd. | Method for producing group III nitride compound semiconductor substrates using ZnO release layers |
US5391257A (en) * | 1993-12-10 | 1995-02-21 | Rockwell International Corporation | Method of transferring a thin film to an alternate substrate |
FR2715501B1 (fr) * | 1994-01-26 | 1996-04-05 | Commissariat Energie Atomique | Procédé de dépôt de lames semiconductrices sur un support. |
US5679152A (en) * | 1994-01-27 | 1997-10-21 | Advanced Technology Materials, Inc. | Method of making a single crystals Ga*N article |
US5454002A (en) * | 1994-04-28 | 1995-09-26 | The Board Of Regents Of The University Of Oklahoma | High temperature semiconductor diode laser |
US5523589A (en) * | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
US5724376A (en) * | 1995-11-30 | 1998-03-03 | Hewlett-Packard Company | Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding |
US5985687A (en) * | 1996-04-12 | 1999-11-16 | The Regents Of The University Of California | Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials |
JP3164016B2 (ja) * | 1996-05-31 | 2001-05-08 | 住友電気工業株式会社 | 発光素子および発光素子用ウエハの製造方法 |
CN1495523A (zh) * | 1996-08-27 | 2004-05-12 | ������������ʽ���� | 转移方法和有源矩阵基板的制造方法 |
DE19640594B4 (de) * | 1996-10-01 | 2016-08-04 | Osram Gmbh | Bauelement |
US6210479B1 (en) * | 1999-02-26 | 2001-04-03 | International Business Machines Corporation | Product and process for forming a semiconductor structure on a host substrate |
US6162705A (en) * | 1997-05-12 | 2000-12-19 | Silicon Genesis Corporation | Controlled cleavage process and resulting device using beta annealing |
US6027988A (en) * | 1997-05-28 | 2000-02-22 | The Regents Of The University Of California | Method of separating films from bulk substrates by plasma immersion ion implantation |
US5874147A (en) * | 1997-07-15 | 1999-02-23 | International Business Machines Corporation | Column III metal nitride films as phase change media for optical recording |
US6013534A (en) * | 1997-07-25 | 2000-01-11 | The United States Of America As Represented By The National Security Agency | Method of thinning integrated circuits received in die form |
US5926740A (en) * | 1997-10-27 | 1999-07-20 | Micron Technology, Inc. | Graded anti-reflective coating for IC lithography |
US5882987A (en) * | 1997-08-26 | 1999-03-16 | International Business Machines Corporation | Smart-cut process for the production of thin semiconductor material films |
US6033995A (en) * | 1997-09-16 | 2000-03-07 | Trw Inc. | Inverted layer epitaxial liftoff process |
US5920764A (en) * | 1997-09-30 | 1999-07-06 | International Business Machines Corporation | Process for restoring rejected wafers in line for reuse as new |
US5966622A (en) * | 1997-10-08 | 1999-10-12 | Lucent Technologies Inc. | Process for bonding crystalline substrates with different crystal lattices |
US6071795A (en) * | 1998-01-23 | 2000-06-06 | The Regents Of The University Of California | Separation of thin films from transparent substrates by selective optical processing |
US6300594B1 (en) * | 1998-02-19 | 2001-10-09 | Ricoh Microelectronics Company, Ltd. | Method and apparatus for machining an electrically conductive film |
US6113685A (en) * | 1998-09-14 | 2000-09-05 | Hewlett-Packard Company | Method for relieving stress in GaN devices |
US6413839B1 (en) * | 1998-10-23 | 2002-07-02 | Emcore Corporation | Semiconductor device separation using a patterned laser projection |
US6744800B1 (en) * | 1998-12-30 | 2004-06-01 | Xerox Corporation | Method and structure for nitride based laser diode arrays on an insulating substrate |
US6172325B1 (en) | 1999-02-10 | 2001-01-09 | Electro Scientific Industries, Inc. | Laser processing power output stabilization apparatus and method employing processing position feedback |
US6036809A (en) * | 1999-02-16 | 2000-03-14 | International Business Machines Corporation | Process for releasing a thin-film structure from a substrate |
US6548386B1 (en) * | 1999-05-17 | 2003-04-15 | Denso Corporation | Method for forming and patterning film |
US6214733B1 (en) * | 1999-11-17 | 2001-04-10 | Elo Technologies, Inc. | Process for lift off and handling of thin film materials |
US6410942B1 (en) * | 1999-12-03 | 2002-06-25 | Cree Lighting Company | Enhanced light extraction through the use of micro-LED arrays |
US6335263B1 (en) * | 2000-03-22 | 2002-01-01 | The Regents Of The University Of California | Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials |
US6425971B1 (en) * | 2000-05-10 | 2002-07-30 | Silverbrook Research Pty Ltd | Method of fabricating devices incorporating microelectromechanical systems using UV curable tapes |
US6562648B1 (en) | 2000-08-23 | 2003-05-13 | Xerox Corporation | Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials |
US6746889B1 (en) * | 2001-03-27 | 2004-06-08 | Emcore Corporation | Optoelectronic device with improved light extraction |
US6417019B1 (en) * | 2001-04-04 | 2002-07-09 | Lumileds Lighting, U.S., Llc | Phosphor converted light emitting diode |
EP2565924B1 (de) * | 2001-07-24 | 2018-01-10 | Samsung Electronics Co., Ltd. | Transferverfahren |
JP2003168820A (ja) | 2001-12-03 | 2003-06-13 | Sony Corp | 剥離方法、レーザー光の照射方法及びこれらを用いた素子の製造方法 |
US6617261B2 (en) * | 2001-12-18 | 2003-09-09 | Xerox Corporation | Structure and method for fabricating GaN substrates from trench patterned GaN layers on sapphire substrates |
US6455340B1 (en) * | 2001-12-21 | 2002-09-24 | Xerox Corporation | Method of fabricating GaN semiconductor structures using laser-assisted epitaxial liftoff |
TWI226139B (en) | 2002-01-31 | 2005-01-01 | Osram Opto Semiconductors Gmbh | Method to manufacture a semiconductor-component |
DE10203795B4 (de) | 2002-01-31 | 2021-12-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Halbleiterbauelements |
US6960813B2 (en) * | 2002-06-10 | 2005-11-01 | New Wave Research | Method and apparatus for cutting devices from substrates |
JP2004022901A (ja) * | 2002-06-18 | 2004-01-22 | Seiko Epson Corp | 光インターコネクション集積回路、光インターコネクション集積回路の製造方法、電気光学装置および電子機器 |
KR101030068B1 (ko) | 2002-07-08 | 2011-04-19 | 니치아 카가쿠 고교 가부시키가이샤 | 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자 |
KR100495215B1 (ko) | 2002-12-27 | 2005-06-14 | 삼성전기주식회사 | 수직구조 갈륨나이트라이드 발광다이오드 및 그 제조방법 |
CN100483612C (zh) | 2003-06-04 | 2009-04-29 | 刘明哲 | 用于制造垂直结构的复合半导体器件的方法 |
KR100558436B1 (ko) * | 2003-06-10 | 2006-03-10 | 삼성전기주식회사 | 질화갈륨 단결정 기판의 제조방법 |
US6949449B2 (en) * | 2003-07-11 | 2005-09-27 | Electro Scientific Industries, Inc. | Method of forming a scribe line on a ceramic substrate |
JP2007525016A (ja) * | 2003-07-14 | 2007-08-30 | アリージス・テクノロジーズ・インコーポレーテッド | 窒化ガリウムを処理する方法 |
WO2007136183A1 (en) | 2006-05-18 | 2007-11-29 | Phicom Corporation | Method of repairing a polymer mask |
KR20070122120A (ko) | 2006-06-23 | 2007-12-28 | 엘지전자 주식회사 | 수직형 발광 다이오드의 제조방법 |
EP2458652B1 (de) | 2006-06-23 | 2023-08-02 | LG Electronics Inc. | Verfahren zur Herstellung lichtemittierender Dioden mit vertikaler Topologie |
KR100724540B1 (ko) | 2006-12-26 | 2007-06-04 | (주)큐엠씨 | 레이저 빔 전달 시스템 및 그 방법과 레이저 리프트 오프방법 |
-
2004
- 2004-12-09 US US11/008,589 patent/US7202141B2/en active Active
-
2005
- 2005-03-25 TW TW094109291A patent/TWI278923B/zh active
- 2005-03-29 WO PCT/US2005/010412 patent/WO2005094320A2/en active Application Filing
- 2005-03-29 EP EP05731585A patent/EP1735837B1/de active Active
- 2005-03-29 AT AT05731585T patent/ATE557425T1/de active
- 2005-03-29 KR KR1020067022455A patent/KR100849779B1/ko active IP Right Review Request
- 2005-03-29 JP JP2007506445A patent/JP5053076B2/ja active Active
- 2005-03-29 CN CN2005800152319A patent/CN1973375B/zh active Active
- 2005-08-30 US US11/215,248 patent/US7241667B2/en active Active
-
2007
- 2007-06-13 US US11/762,336 patent/US7846847B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN1973375A (zh) | 2007-05-30 |
WO2005094320A3 (en) | 2006-09-28 |
WO2005094320A2 (en) | 2005-10-13 |
KR20070013288A (ko) | 2007-01-30 |
US20070298587A1 (en) | 2007-12-27 |
JP5053076B2 (ja) | 2012-10-17 |
EP1735837B1 (de) | 2012-05-09 |
JP2007534164A (ja) | 2007-11-22 |
TW200537606A (en) | 2005-11-16 |
EP1735837A2 (de) | 2006-12-27 |
US20050227455A1 (en) | 2005-10-13 |
EP1735837A4 (de) | 2009-11-04 |
CN1973375B (zh) | 2012-07-04 |
KR100849779B1 (ko) | 2008-07-31 |
TWI278923B (en) | 2007-04-11 |
US20060003553A1 (en) | 2006-01-05 |
US7846847B2 (en) | 2010-12-07 |
US7202141B2 (en) | 2007-04-10 |
US7241667B2 (en) | 2007-07-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ATE557425T1 (de) | Verfahren zum trennen von materialschichten | |
ATE545151T1 (de) | Verfahren zum binden zweier aus materialien, die aus halbleitermaterialien ausgewählt wurden, hergestellter wafer | |
WO2004093141A3 (en) | Methods for producing light emitting device | |
TW201129795A (en) | Inspection method, inspection apparatus and electron beam apparatus | |
TW201130183A (en) | Method of manufacturing high resolution organic thin film pattern | |
EP2237335A3 (de) | Weisses Licht emittierende Chips und Herstellungsverfahren dafür | |
TW200628574A (en) | Adhesion promoter, electroactive layer and electroactive device comprising same, and method | |
DE502005009227D1 (de) | Verfahren zum partiellen lösen einer leitfähigen schicht | |
ATE411888T1 (de) | Verfahren und vorrichtung für dreidimensionales drucken | |
ATE444977T1 (de) | Verfahren zur herstellung von aba- triblockcopolymeren auf (meth)acrylatbasis | |
NO20090396L (no) | Fremgangsmate for fremstilling av diagnostisk test-strip | |
ATE542234T1 (de) | Verfahren zur herstellung einer vorrichtung mit mehrstrahlen-ablenkanordnung mit elektroden | |
GB2429428A9 (en) | Methods for producing microchannel chips, microchannel chips, methods for separating biomolecules using the microchannel chips and electrophoretic apparatus hav | |
ATE433216T1 (de) | Verfahren zur herstellung von lateralen halbleitervorrichtungen | |
TWI267133B (en) | Method of segmenting a wafer | |
TW200644288A (en) | Free standing substrate, method for manufacturing the same, and semiconductor light emitting element | |
ATE301332T1 (de) | Verfahren zum selektiven transferieren von halbleiter-chips von einem träger zu einem empfangssubstrat | |
TW200716760A (en) | Method for test strip manufacturing and test card analysis | |
ATE352784T1 (de) | Verfahren zum screenen für gpr40-liganden | |
TW200632552A (en) | Process for producing resist pattern and conductor pattern | |
RU2014135770A (ru) | Устройство на органических светодиодах и его изготовление | |
EP1732371A3 (de) | Verfahren zur Bildung eines leitfähigen Musters auf einem Substrat | |
ATE416129T1 (de) | Verfahren und vorrichtung zur bildung und abführung von geordneten gruppen von produkten, insbesondere papierrollen | |
RU2015108951A (ru) | Способ создания структурированной поверхности инструмента пресса и инструмент пресса | |
ATE530312T1 (de) | Vorrichtung zum abtrennen einer schicht von einem substrat und verfahren dafür |