KR100849779B1 - 소재 층의 분리 방법 - Google Patents
소재 층의 분리 방법 Download PDFInfo
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- KR100849779B1 KR100849779B1 KR1020067022455A KR20067022455A KR100849779B1 KR 100849779 B1 KR100849779 B1 KR 100849779B1 KR 1020067022455 A KR1020067022455 A KR 1020067022455A KR 20067022455 A KR20067022455 A KR 20067022455A KR 100849779 B1 KR100849779 B1 KR 100849779B1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0732—Shaping the laser spot into a rectangular shape
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/083—Devices involving movement of the workpiece in at least one axial direction
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
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- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Laser Beam Processing (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Lasers (AREA)
- Element Separation (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
소재 | 구조 | 격자 상수.a(Å) | 격자 상수.c(Å) | 밀도(g/㎤) | 띠갭 에너지(eV) | 열팽창(×10-6/°K) |
사파이어 | 6방 정계 | 4.758 | 12.991 | 3.97 | 9.9 | 7.50 |
GaN | 6방 정계 | 3.189 | 5.815 | 6.1 | 3.3 | 5.95 |
Claims (57)
- 기판으로부터 적어도 하나의 소재 층을 분리시키는 방법에 있어서,제1 기판, 제2 기판 및 상기 기판들 사이에 스트리트들에 의하여 다수 개의 섹션들로 분리될 수 있는 적어도 하나의 소재 층을 제공하는 단계;상기 다수개의 섹션들을 포함하는 영역과 상기 영역 내의 상기 섹션들 사이의 임의의 상기 스트리트들을 덮을 수 있도록 형성된 빔 스팟을 레이저를 사용하여 형성하는 단계; 및상기 빔 스팟을 사용하여 상기 제1 기판 및 상기 섹션들 사이의 인터페이스를 조사시키는 단계를 포함하고,상기 조사시키는 것은 상기 제1 기판이 모든 상기 섹션들로부터 분리될 때까지 상기 다수개의 섹션들을 포함하는 다수개의 영역을 위하여 실행되고, 상기 조사시키는 것은 상기 빔 스팟의 스티칭이 단지 상기 섹션들 사이의 상기 스트리트들 내부에서만 발생되도록 하기 위하여 각각의 상기 다수개의 상기 섹션을 위하여 실행되는 소재 층의 분리 방법.
- 삭제
- 제1항에 있어서,스테이지(stage)상에서 상기 기판 및 상기 층을 이동시키는 단계; 및상기 스테이지의 위치를 미리 결정된 값과 비교하는 단계를 추가로 포함하고,상기 레이저는 상기 빔 스팟을 형성하고, 상기 제1 기판과 각각의 상기 다수개의 상기 섹션들 사이의 인터페이스를 조사하기 위하여 상기 위치에 기초하여 레이저가 개시되는(triggered) 소재 층의 분리 방법.
- 제1항에 있어서, 제1 및 제2 기판 그리고 상기 기판들 사이에 상기 적어도 하나의 소재 층을 제공하는 단계는,상기 제1 기판 위에 형성된 상기 적어도 하나의 소재 층을 가지는 상기 제1 기판을 제공하는 단계;상기 적어도 하나의 소재층을 상기 제1 기판 위에 상기 스트리트들에 의하여 분리된 다이에 해당하는 상기 다수 개의 섹션들로 분리하기 위하여 적어도 하나의 소재 층을 에칭하는 단계; 및상기 제2 기판을 상기 섹션에 부착하는 단계를 포함하는 소재 층의 분리 방법.
- 제4항에 있어서, 상기 제2 기판을 부착하기 전에 상기 섹션들 및 스트리트들 위쪽으로 금속 기판을 형성하는 단계;상기 섹션들 사이의 위치에서 적어도 상기 금속 기판을 절단하는 단계; 및상기 섹션들로부터 상기 제1 기판을 분리한 후 상기 금속 기판의 적어도 일부를 제거하는 단계를 더 포함하는 소재 층의 분리 방법.
- 제1항에 있어서, 상기 기판은 반도체 웨이퍼가 되고, 상기 제1 기판이 분리된 후 반도체 다이들을 형성하기 위하여 상기 섹션들을 분리하는 단계를 더 포함하는 소재 층의 분리 방법.
- 제1항에 있어서, 상기 제1 기판 및 상기 섹션들 사이의 인터페이스는 빔 균질 장치를 사용하여 형성된 균질한 빔 스팟을 이용하여 조사되는 소재 층의 분리 방법.
- 제1항에 있어서, 상기 레이저는 엑시머 레이저가 되고, 상기 인터페이스를 조사시키는 것은 상기 인터페이스를 각각의 상기 다수개의 상기 섹션들을 위하여 상기 엑시머 레이저의 단일 펄스에 노출시키는 것을 포함하는 소재 층의 분리 방법.
- 제1항에 있어서, 상기 인터페이스를 조사시키는 것은 상기 인터페이스에 폭발적인 충격파를 유도하기에 충분한 레이저 에너지 밀도를 사용하여 실행되고, 상기 폭발적인 충격파는 상기 제1 기판을 상기 섹션들로부터 분리시키는 것을 포함하는 소재 층의 분리 방법.
- 제1항에 있어서, 상기 인터페이스를 조사시키는 것은 상기 인터페이를 일정 각도로 레이저 광에 노출시키는 것에 의하여 상기 인터페이스를 조사시키는 단계를 포함하는 소재 층의 분리 방법.
- 적어도 하나의 소재 층을 기판으로부터 분리시키는 방법에 있어서,기판 위에 형성된 적어도 하나의 소재 층을 가지는 상기 기판을 제공하는 단계;적어도 레이저 및 빔 균질 장치를 사용하여 균질한 빔 스팟을 형성하는 단계; 및상기 기판으로부터 상기 소재층을 분리시키기 위하여 상기 균질 빔 스팟의 단일 펄스를 사용하여 균등하게 분포된 레이저 에너지 밀도로 상기 소재층 및 상기 기판 사이의 인터페이스를 조사시키는 단계를 포함하고,상기 균질한 빔 스팟의 상기 레이저 에너지 밀도는 상기 인터페이스에 충격파를 유도하기에 충분하고, 상기 충격파는 상기 기판을 상기 소재 층으로부터 분리시키는 것을 특징으로 하는 소재 층의 분리 방법.
- 제11항에 있어서, 조사시키는 것은 0.6 J/㎠ 내지 1.6 J/㎠의 범위에 있는 레이저 에너지 밀도를 사용하여 실행되는 소재 층의 분리 방법.
- 제11항에 있어서, 상기 기판은 사파이어 웨이퍼를 포함하는 소재 층의 분리 방법.
- 제13항에 있어서, 상기 적어도 하나의 소재층은 GaN을 포함하는 소재 층의 분리방법.
- 제14항에 있어서, GaN을 포함하는 상기 적어도 하나의 소재층 위에 적어도 하나의 반사 필름을 형성하는 단계를 더 포함하는 소재 층의 분리 방법.
- 제15항에 있어서, 상기 기판은 몰리브덴 또는 몰리브덴의 합금을 포함하는 소재 층의 분리 방법.
- 제16항에 있어서, 상기 반사 필름은 알루미늄 필름이 되고, 상기 적어도 하나의 소재층은 상기 알루미늄 필름 위에 금속 필름을 더 포함하고, 상기 몰리브덴을 포함하는 상기 기판은 상기 금속 필름에 부착되는 소재 층의 분리 방법.
- 제14항에 있어서, 상기 적어도 하나의 소재층은 GaN 버퍼 층을 더 포함하고, 상기 균질 빔 스팟은 248 nm 엑시머 레이저를 사용하여 형성되는 소재 층의 분리 방법.
- 제14항에 있어서, 상기 적어도 하나의 소재층은 AlN 버퍼 층을 더 포함하고, 상기 균질 빔 스팟은 193 nm 엑시머 레이저를 사용하여 형성되는 소재 층의 분리 방법.
- 제11항에 있어서, 상기 균질 빔 스팟은 연장된 선으로 형성되고, 상기에서 조사시키는 것은 상기 인터페이스를 가로질러 상기 연장된 선을 스캐닝하는 것을 포함하는 소재 층의 분리 방법.
- 제11항에 있어서, 상기 인터페이스는 상기 층을 상기 기판으로부터 분리시키기 위하여 동심원 형태, 소용돌이(spiral) 형태, 또는 원 형태 중 적어도 하나로 조사되는 소재 층의 분리 방법.
- 제11항에 있어서, 상기 적어도 하나의 소재 층은 스트리트들에 의하여 다수 개의 섹션들로 분리되며, 상기 빔 스팟은 상기 다수개의 섹션들을 포함하는 영역과 상기 영역 내의 상기 섹션들 사이의 임의의 상기 스트리트들을 덮을 수 있도록 형성되며, 상기 조사시키는 것은 상기 기판이 모든 상기 섹션들로부터 분리될 때까지 상기 다수개의 섹션들을 포함하는 다수개의 영역을 위하여 실행되는 소재 층의 분리 방법.
- 제1항에 있어서, 조사시키는 것은 0.6 J/㎠ 내지 1.6 J/㎠의 범위에 있는 레이저 에너지 밀도를 사용하여 실행되는 소재 층의 분리 방법.
- 제1항에 있어서, 상기 제1 기판은 사파이어 웨이퍼를 포함하는 소재 층의 분리 방법.
- 제24항에 있어서, 상기 적어도 하나의 소재층은 GaN을 포함하는 소재 층의 분리방법.
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ATE557425T1 (de) | 2012-05-15 |
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EP1735837A4 (en) | 2009-11-04 |
CN1973375B (zh) | 2012-07-04 |
TWI278923B (en) | 2007-04-11 |
US20060003553A1 (en) | 2006-01-05 |
US7846847B2 (en) | 2010-12-07 |
US7202141B2 (en) | 2007-04-10 |
US7241667B2 (en) | 2007-07-10 |
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