CN101086083B - 一种制备三族氮化物衬底的方法 - Google Patents
一种制备三族氮化物衬底的方法 Download PDFInfo
- Publication number
- CN101086083B CN101086083B CN2007100235558A CN200710023555A CN101086083B CN 101086083 B CN101086083 B CN 101086083B CN 2007100235558 A CN2007100235558 A CN 2007100235558A CN 200710023555 A CN200710023555 A CN 200710023555A CN 101086083 B CN101086083 B CN 101086083B
- Authority
- CN
- China
- Prior art keywords
- substrate
- film
- nitride
- iii
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2007100235558A CN101086083B (zh) | 2007-06-08 | 2007-06-08 | 一种制备三族氮化物衬底的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2007100235558A CN101086083B (zh) | 2007-06-08 | 2007-06-08 | 一种制备三族氮化物衬底的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101086083A CN101086083A (zh) | 2007-12-12 |
CN101086083B true CN101086083B (zh) | 2011-05-11 |
Family
ID=38937237
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007100235558A Active CN101086083B (zh) | 2007-06-08 | 2007-06-08 | 一种制备三族氮化物衬底的方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN101086083B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102817074B (zh) * | 2012-07-23 | 2015-09-30 | 北京燕园中镓半导体工程研发中心有限公司 | 基于原位应力控制的iii族氮化物厚膜自分离方法 |
CN103367117A (zh) * | 2013-07-05 | 2013-10-23 | 江苏能华微电子科技发展有限公司 | 一种基于HVPE工艺的GaN衬底制作方法 |
CN103541000B (zh) * | 2013-11-06 | 2016-09-07 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种制备氮化硼单晶的装置及方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1383185A (zh) * | 2002-05-31 | 2002-12-04 | 南京大学 | 激光剥离制备自支撑氮化镓衬底的方法 |
CN1779900A (zh) * | 2004-11-23 | 2006-05-31 | 北京大学 | GaN基外延层的大面积、低功率激光剥离方法 |
CN1801459A (zh) * | 2005-01-03 | 2006-07-12 | 三星电机株式会社 | 用于制造基于氮化镓的单晶衬底的方法和装置 |
CN1973375A (zh) * | 2004-03-29 | 2007-05-30 | J.P.瑟塞尔联合公司 | 使用激光束分离材料层的方法 |
-
2007
- 2007-06-08 CN CN2007100235558A patent/CN101086083B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1383185A (zh) * | 2002-05-31 | 2002-12-04 | 南京大学 | 激光剥离制备自支撑氮化镓衬底的方法 |
CN1973375A (zh) * | 2004-03-29 | 2007-05-30 | J.P.瑟塞尔联合公司 | 使用激光束分离材料层的方法 |
CN1779900A (zh) * | 2004-11-23 | 2006-05-31 | 北京大学 | GaN基外延层的大面积、低功率激光剥离方法 |
CN1801459A (zh) * | 2005-01-03 | 2006-07-12 | 三星电机株式会社 | 用于制造基于氮化镓的单晶衬底的方法和装置 |
Also Published As
Publication number | Publication date |
---|---|
CN101086083A (zh) | 2007-12-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6498113B1 (en) | Free standing substrates by laser-induced decoherency and regrowth | |
US8803189B2 (en) | III-V compound semiconductor epitaxy using lateral overgrowth | |
CN102201332B (zh) | 一种GaN衬底的制备方法 | |
CN102226985B (zh) | 一种GaN衬底的制备方法 | |
US20110124139A1 (en) | Method for manufacturing free-standing substrate and free-standing light-emitting device | |
CN100505165C (zh) | 一种制备氮化镓单晶衬底的方法 | |
KR101137911B1 (ko) | 질화갈륨 기판의 제조 방법 | |
CN101445956A (zh) | 一种氮化物薄膜外延生长的方法 | |
CN101702418B (zh) | 降低位错缺陷的GaN基LED芯片外延生长方法 | |
US20110079766A1 (en) | Process for fabricating iii-nitride based nanopyramid leds directly on a metalized silicon substrate | |
EP1232520A1 (en) | Pendeoepitaxial growth of gallium nitride layers on sapphire substrates | |
US20060175681A1 (en) | Method to grow III-nitride materials using no buffer layer | |
DE112006002505T5 (de) | Verfahren zur Herstellung eines Halbleiters eines Nitrids der Gruppe 3-5 und Verfahren zur Herstellung einer lichtemittierenden Vorrichtung | |
US7951694B2 (en) | Semiconductor structure and method of manufacture of same | |
CN101685768A (zh) | 一种制备自支撑单晶氮化镓衬底的方法 | |
US20150187985A1 (en) | Method for Producing an Optoelectronic Semiconductor Chip and Optoelectronic Semiconductor Chip | |
JP2007335484A (ja) | 窒化物半導体ウェハ | |
CN101086083B (zh) | 一种制备三族氮化物衬底的方法 | |
Yin et al. | Molecular beam epitaxial growth of AlN thin films on Si through exploiting low Al adatom migration and the nitrogen-rich environment on a nanowire template | |
CN1309013C (zh) | 硅衬底上生长低位错氮化镓的方法 | |
US20180122635A1 (en) | Nitride Underlayer and Fabrication Method Thereof | |
JP2022173200A (ja) | 横方向に配向した低欠陥密度で大面積の金属窒化物アイランドのプラットフォームおよびその製造方法 | |
JPH07267796A (ja) | GaN単結晶の製造方法 | |
Hsueh et al. | InGaN LED fabricated on Eco-GaN template with a Ga2O3 sacrificial layer for chemical lift-off application | |
Wei et al. | High-quality GaN epitaxially grown on Si substrate with serpentine channels |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SUZHOU INSTITUTE OF NANO-TECH AND NANO-BIONICS(SIN Free format text: FORMER OWNER: SUZHOU NANO TECHNIQUE + NANO BIONIC RESEARCH INST. Effective date: 20100908 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 215123 B-513, SUZHOU GRADUATE SCHOOL OF NANJING UNIVERSITY, NO.150, REN AI ROAD, SUZHOU INDUSTRIAL PARK, SUZHOU CITY, JIANGSU PROVINCE TO: 215123 NO.398, RUOSHUI ROAD, SUZHOU INDUSTRIAL PARK, SUZHOU CITY, JIANGSU PROVINCE |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20100908 Address after: 215123 Suzhou Industrial Park, Jiangsu Province, if the waterway No. 398, No. Applicant after: Suzhou Institute of Nano-Tech and Bionics (SINANO), Chinese Academy of Sciences Address before: 215123 Graduate School of Suzhou graduate school, 150 Yan Ai Road, Suzhou Industrial Park, Jiangsu, Suzhou, B-513 Applicant before: Suzhou Nano Technique & Nano Bionic Research Inst. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160413 Address after: Suzhou City, Jiangsu Province, Suzhou Industrial Park 215000 Xinghu Street No. 218 BioBAY A7-101 Patentee after: Suzhou Nanowin Science and Technology Co., Ltd. Address before: 215123 Suzhou Industrial Park, Jiangsu Province, if the waterway No. 398, No. Patentee before: Suzhou Institute of Nano-Tech and Bionics (SINANO), Chinese Academy of Sciences |