ATE389937T1 - Schnelles programmier- und programmierverifikationsverfahren - Google Patents
Schnelles programmier- und programmierverifikationsverfahrenInfo
- Publication number
- ATE389937T1 ATE389937T1 AT01480133T AT01480133T ATE389937T1 AT E389937 T1 ATE389937 T1 AT E389937T1 AT 01480133 T AT01480133 T AT 01480133T AT 01480133 T AT01480133 T AT 01480133T AT E389937 T1 ATE389937 T1 AT E389937T1
- Authority
- AT
- Austria
- Prior art keywords
- programming
- program
- control gate
- fast
- verification procedure
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
- G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
- Circuits Of Receivers In General (AREA)
- Debugging And Monitoring (AREA)
- Storage Device Security (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US25582400P | 2000-12-15 | 2000-12-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE389937T1 true ATE389937T1 (de) | 2008-04-15 |
Family
ID=22970026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT01480133T ATE389937T1 (de) | 2000-12-15 | 2001-12-14 | Schnelles programmier- und programmierverifikationsverfahren |
Country Status (7)
Country | Link |
---|---|
US (8) | US6549463B2 (de) |
EP (1) | EP1215680B1 (de) |
JP (1) | JP4050048B2 (de) |
KR (1) | KR100880547B1 (de) |
AT (1) | ATE389937T1 (de) |
DE (1) | DE60133259D1 (de) |
TW (1) | TW577082B (de) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1215680B1 (de) * | 2000-12-15 | 2008-03-19 | Halo Lsi Design and Device Technology Inc. | Schnelles Programmier- und Programmierverifikationsverfahren |
JP4084922B2 (ja) * | 2000-12-22 | 2008-04-30 | 株式会社ルネサステクノロジ | 不揮発性記憶装置の書込み方法 |
WO2002097821A1 (fr) * | 2001-05-25 | 2002-12-05 | Fujitsu Limited | Dispositif de stockage non volatile a semi-conducteur |
EP1274096B1 (de) * | 2001-07-06 | 2007-09-19 | Halo Lsi Design and Device Technology Inc. | Steuergate- und Wortleitungs-Spannungserhöhungsverfahren für Zwilling-MONOS-Zellenspeichern |
US6925007B2 (en) * | 2001-10-31 | 2005-08-02 | Sandisk Corporation | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
US6897522B2 (en) * | 2001-10-31 | 2005-05-24 | Sandisk Corporation | Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements |
US6795349B2 (en) * | 2002-02-28 | 2004-09-21 | Sandisk Corporation | Method and system for efficiently reading and programming of dual cell memory elements |
US6747893B2 (en) * | 2002-03-14 | 2004-06-08 | Intel Corporation | Storing data in non-volatile memory devices |
JP3900979B2 (ja) * | 2002-03-14 | 2007-04-04 | セイコーエプソン株式会社 | 不揮発性レジスタおよび半導体装置 |
JP3843869B2 (ja) * | 2002-03-15 | 2006-11-08 | セイコーエプソン株式会社 | 不揮発性半導体記憶装置 |
US6888755B2 (en) * | 2002-10-28 | 2005-05-03 | Sandisk Corporation | Flash memory cell arrays having dual control gates per memory cell charge storage element |
US7031192B1 (en) | 2002-11-08 | 2006-04-18 | Halo Lsi, Inc. | Non-volatile semiconductor memory and driving method |
JP2004348792A (ja) * | 2003-05-20 | 2004-12-09 | Sharp Corp | 半導体記憶装置、表示装置及び携帯電子機器 |
US6992917B2 (en) * | 2003-12-15 | 2006-01-31 | International Business Machines Corporation | Integrated circuit with reduced body effect sensitivity |
US20050251617A1 (en) * | 2004-05-07 | 2005-11-10 | Sinclair Alan W | Hybrid non-volatile memory system |
US7206224B1 (en) * | 2004-04-16 | 2007-04-17 | Spansion Llc | Methods and systems for high write performance in multi-bit flash memory devices |
WO2005109438A2 (en) * | 2004-05-06 | 2005-11-17 | Halo Lsi, Inc. | Non-volatile memory dynamic operations |
JP4422556B2 (ja) * | 2004-06-10 | 2010-02-24 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置およびその書き込み方法 |
US7145372B2 (en) * | 2004-08-31 | 2006-12-05 | Micron Technology, Inc. | Startup circuit and method |
JP2006278987A (ja) | 2005-03-30 | 2006-10-12 | Nec Electronics Corp | 不揮発性記憶素子およびその製造方法 |
US7180779B2 (en) * | 2005-07-11 | 2007-02-20 | Atmel Corporation | Memory architecture with enhanced over-erase tolerant control gate scheme |
US7388252B2 (en) * | 2005-09-23 | 2008-06-17 | Macronix International Co., Ltd. | Two-bits per cell not-and-gate (NAND) nitride trap memory |
US7951669B2 (en) * | 2006-04-13 | 2011-05-31 | Sandisk Corporation | Methods of making flash memory cell arrays having dual control gates per memory cell charge storage element |
JP2009076188A (ja) * | 2007-08-24 | 2009-04-09 | Renesas Technology Corp | 不揮発性半導体記憶装置 |
US7808833B2 (en) * | 2008-01-28 | 2010-10-05 | Qimonda Flash Gmbh | Method of operating an integrated circuit, integrated circuit and method to determine an operating point |
CN101968972B (zh) * | 2010-07-23 | 2016-04-13 | 上海华虹宏力半导体制造有限公司 | ***栅快闪存储单元的编程验证方法 |
CN101986389B (zh) * | 2010-10-12 | 2015-06-24 | 上海华虹宏力半导体制造有限公司 | 闪存单元、闪存装置及其编程方法 |
US9098553B2 (en) | 2013-03-15 | 2015-08-04 | Gridglo Llc | System and method for remote activity detection |
US9082490B2 (en) * | 2013-06-18 | 2015-07-14 | Flashsilicon Incorporation | Ultra-low power programming method for N-channel semiconductor non-volatile memory |
TWI627636B (zh) * | 2017-05-23 | 2018-06-21 | 旺宏電子股份有限公司 | 感測放大器以及用於其位元線電壓補償的方法 |
CN113129940A (zh) * | 2019-12-30 | 2021-07-16 | 北京兆易创新科技股份有限公司 | 一种闪存及其制造方法 |
Family Cites Families (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0345273B1 (de) | 1987-02-13 | 1996-02-28 | The Dow Chemical Company | Medium für optische aufzeichnung |
US5784327A (en) * | 1991-06-12 | 1998-07-21 | Hazani; Emanuel | Memory cell array selection circuits |
US5357462A (en) * | 1991-09-24 | 1994-10-18 | Kabushiki Kaisha Toshiba | Electrically erasable and programmable non-volatile semiconductor memory with automatic write-verify controller |
US5712180A (en) * | 1992-01-14 | 1998-01-27 | Sundisk Corporation | EEPROM with split gate source side injection |
US6222762B1 (en) * | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
US7071060B1 (en) * | 1996-02-28 | 2006-07-04 | Sandisk Corporation | EEPROM with split gate source side infection with sidewall spacers |
US5592415A (en) * | 1992-07-06 | 1997-01-07 | Hitachi, Ltd. | Non-volatile semiconductor memory |
JP2541087B2 (ja) * | 1992-10-30 | 1996-10-09 | 日本電気株式会社 | 不揮発性半導体記憶装置のデ―タ消去方法 |
JP3252306B2 (ja) * | 1993-08-10 | 2002-02-04 | 株式会社日立製作所 | 半導体不揮発性記憶装置 |
US5467308A (en) * | 1994-04-05 | 1995-11-14 | Motorola Inc. | Cross-point eeprom memory array |
US5422504A (en) * | 1994-05-02 | 1995-06-06 | Motorola Inc. | EEPROM memory device having a sidewall spacer floating gate electrode and process |
DE19523775C2 (de) * | 1994-06-29 | 2001-12-06 | Toshiba Kawasaki Kk | Nichtflüchtige Halbleiterspeichervorrichtung |
US5694356A (en) * | 1994-11-02 | 1997-12-02 | Invoice Technology, Inc. | High resolution analog storage EPROM and flash EPROM |
US5541130A (en) * | 1995-06-07 | 1996-07-30 | International Business Machines Corporation | Process for making and programming a flash memory array |
JP3517489B2 (ja) * | 1995-09-04 | 2004-04-12 | 株式会社日立製作所 | 不揮発性半導体記憶装置 |
JP3184082B2 (ja) * | 1995-11-24 | 2001-07-09 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
US5712815A (en) * | 1996-04-22 | 1998-01-27 | Advanced Micro Devices, Inc. | Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells |
JP3404712B2 (ja) * | 1996-05-15 | 2003-05-12 | 株式会社東芝 | 不揮発性半導体記憶装置及びその書き込み方法 |
US5748538A (en) * | 1996-06-17 | 1998-05-05 | Aplus Integrated Circuits, Inc. | OR-plane memory cell array for flash memory with bit-based write capability, and methods for programming and erasing the memory cell array |
TW367503B (en) * | 1996-11-29 | 1999-08-21 | Sanyo Electric Co | Non-volatile semiconductor device |
JP3481817B2 (ja) * | 1997-04-07 | 2003-12-22 | 株式会社東芝 | 半導体記憶装置 |
US5889303A (en) * | 1997-04-07 | 1999-03-30 | Motorola, Inc. | Split-Control gate electrically erasable programmable read only memory (EEPROM) cell |
KR100284916B1 (ko) * | 1997-07-29 | 2001-03-15 | 니시무로 타이죠 | 반도체 기억 장치 및 그 기입 제어 방법 |
IL125604A (en) * | 1997-07-30 | 2004-03-28 | Saifun Semiconductors Ltd | Non-volatile electrically erasable and programmble semiconductor memory cell utilizing asymmetrical charge |
US6768165B1 (en) | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
US6108238A (en) * | 1997-09-11 | 2000-08-22 | Kabushiki Kaisha Toshiba | Programmable semiconductor memory device having program voltages and verify voltages |
KR100287885B1 (ko) * | 1997-12-31 | 2001-05-02 | 김영환 | 반도체 메모리 장치 |
KR100327421B1 (ko) * | 1997-12-31 | 2002-07-27 | 주식회사 하이닉스반도체 | 비휘발성 메모리 소자의 프로그램 시스템 및 그의 프로그램 방법 |
US6353242B1 (en) * | 1998-03-30 | 2002-03-05 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory |
JPH11317085A (ja) * | 1998-05-08 | 1999-11-16 | Sony Corp | プログラム・ベリファイ回路及びプログラム・ベリファイ方法 |
US6208542B1 (en) * | 1998-06-30 | 2001-03-27 | Sandisk Corporation | Techniques for storing digital data in an analog or multilevel memory |
US6180461B1 (en) * | 1998-08-03 | 2001-01-30 | Halo Lsi Design & Device Technology, Inc. | Double sidewall short channel split gate flash memory |
JP2000138300A (ja) * | 1998-10-30 | 2000-05-16 | Sony Corp | 不揮発性半導体記憶装置及びその書き込み方法 |
US7031214B2 (en) * | 1999-01-14 | 2006-04-18 | Silicon Storage Technology, Inc. | Digital multilevel memory system having multistage autozero sensing |
US6975539B2 (en) * | 1999-01-14 | 2005-12-13 | Silicon Storage Technology, Inc. | Digital multilevel non-volatile memory system |
US6133098A (en) * | 1999-05-17 | 2000-10-17 | Halo Lsi Design & Device Technology, Inc. | Process for making and programming and operating a dual-bit multi-level ballistic flash memory |
US6248633B1 (en) | 1999-10-25 | 2001-06-19 | Halo Lsi Design & Device Technology, Inc. | Process for making and programming and operating a dual-bit multi-level ballistic MONOS memory |
US6490204B2 (en) * | 2000-05-04 | 2002-12-03 | Saifun Semiconductors Ltd. | Programming and erasing methods for a reference cell of an NROM array |
US6292394B1 (en) * | 2000-06-29 | 2001-09-18 | Saifun Semiconductors Ltd. | Method for programming of a semiconductor memory cell |
TW503528B (en) * | 2000-07-12 | 2002-09-21 | Koninkl Philips Electronics Nv | Semiconductor device |
JP2002170891A (ja) * | 2000-11-21 | 2002-06-14 | Halo Lsi Design & Device Technol Inc | デュアルビット多準位バリスティックmonosメモリの製造、プログラミング、および動作のプロセス |
ATE392698T1 (de) * | 2000-12-05 | 2008-05-15 | Halo Lsi Design & Device Tech | Programmier- und löschverfahren in zwilling-monos-zellenspeichern |
EP1215680B1 (de) * | 2000-12-15 | 2008-03-19 | Halo Lsi Design and Device Technology Inc. | Schnelles Programmier- und Programmierverifikationsverfahren |
-
2001
- 2001-12-14 EP EP01480133A patent/EP1215680B1/de not_active Expired - Lifetime
- 2001-12-14 US US10/016,916 patent/US6549463B2/en not_active Expired - Lifetime
- 2001-12-14 JP JP2001381765A patent/JP4050048B2/ja not_active Expired - Lifetime
- 2001-12-14 TW TW090131003A patent/TW577082B/zh not_active IP Right Cessation
- 2001-12-14 DE DE60133259T patent/DE60133259D1/de not_active Expired - Lifetime
- 2001-12-14 AT AT01480133T patent/ATE389937T1/de not_active IP Right Cessation
- 2001-12-15 KR KR1020010079717A patent/KR100880547B1/ko not_active IP Right Cessation
-
2003
- 2003-02-20 US US10/371,840 patent/US6636439B1/en not_active Expired - Lifetime
- 2003-02-20 US US10/371,519 patent/US6807105B2/en not_active Expired - Lifetime
- 2003-02-20 US US10/371,514 patent/US6611461B2/en not_active Expired - Lifetime
- 2003-02-20 US US10/371,518 patent/US7046553B2/en not_active Expired - Lifetime
- 2003-02-20 US US10/371,520 patent/US6856545B2/en not_active Expired - Lifetime
- 2003-02-20 US US10/371,839 patent/US6628547B2/en not_active Expired - Lifetime
- 2003-02-20 US US10/371,836 patent/US6628546B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20030123291A1 (en) | 2003-07-03 |
JP4050048B2 (ja) | 2008-02-20 |
EP1215680B1 (de) | 2008-03-19 |
US20030123293A1 (en) | 2003-07-03 |
EP1215680A2 (de) | 2002-06-19 |
US20030128588A1 (en) | 2003-07-10 |
US20030123308A1 (en) | 2003-07-03 |
US6807105B2 (en) | 2004-10-19 |
US6628546B2 (en) | 2003-09-30 |
US6856545B2 (en) | 2005-02-15 |
US7046553B2 (en) | 2006-05-16 |
US6636439B1 (en) | 2003-10-21 |
DE60133259D1 (de) | 2008-04-30 |
US20030185053A1 (en) | 2003-10-02 |
TW577082B (en) | 2004-02-21 |
US6628547B2 (en) | 2003-09-30 |
US6549463B2 (en) | 2003-04-15 |
EP1215680A3 (de) | 2004-01-21 |
US20030123292A1 (en) | 2003-07-03 |
US6611461B2 (en) | 2003-08-26 |
KR20020071442A (ko) | 2002-09-12 |
JP2002230988A (ja) | 2002-08-16 |
US20030123290A1 (en) | 2003-07-03 |
US20020075725A1 (en) | 2002-06-20 |
KR100880547B1 (ko) | 2009-01-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60133259D1 (de) | Schnelles Programmier- und Programmierverifikationsverfahren | |
CN104767270B (zh) | 一种具有负载检测功能的移动充电电源 | |
US5347490A (en) | Nonvolatile semiconductor memory device | |
CN101667446B (zh) | 存储器及其读取方法 | |
CN100524526C (zh) | 电荷陷入非易失存储单元及其阵列的编程方法 | |
EP1077450A3 (de) | Nichtflüchtiger Speicher Typ NAND | |
ATE331289T1 (de) | Hintergrund-ausführung einer operation mit speicherzellen | |
GB2283345A (en) | Non-volatile memory device and method for adjusting the threshold value thereof | |
US5677874A (en) | Nonvolatile semiconductor memory device | |
ATE249676T1 (de) | Prüfungsschaltung zum trimmen von referenzzellen | |
JPH01192092A (ja) | 電気的消去可能不揮発性半導体記憶装置 | |
DE60126582D1 (de) | Programmier- und Löschmethode für eine Referenzzelle eines NROM Speichers | |
CN102044286B (zh) | 源极端感测的渗入电流*** | |
ATE213562T1 (de) | Verfahren zum programmieren einer flash-eeprom- speicherzelle unter optimierung des niedrigen leistungsverbrauchs und verfahren zum löschen dieser zelle | |
US20080043516A1 (en) | Non-volatile, static random access memory with regulated erase saturation and program window | |
CN101208754A (zh) | 半导体器件及其控制方法 | |
US5852582A (en) | Non-volatile storage device refresh time detector | |
KR20000020101A (ko) | 불 휘발성 반도체 메모리 장치 | |
CN107195319A (zh) | 灵敏放大器电路 | |
TW200713281A (en) | Nonvolatile memory cell programming | |
CN107294386A (zh) | 直流电源控制电路 | |
CN206340344U (zh) | 一种选通开关电路及包含该电路的存储器 | |
US9484106B2 (en) | Nonvolatile semiconductor memory | |
TW200731269A (en) | Method and apparatus for implementing walkout of device junctions | |
CN103956179B (zh) | 一种灵敏放大器及应用其的存储*** |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |