ATE358195T1 - Verfahren zur synthese eines kristallinen materials und danach erhaltenes material - Google Patents
Verfahren zur synthese eines kristallinen materials und danach erhaltenes materialInfo
- Publication number
- ATE358195T1 ATE358195T1 AT04767480T AT04767480T ATE358195T1 AT E358195 T1 ATE358195 T1 AT E358195T1 AT 04767480 T AT04767480 T AT 04767480T AT 04767480 T AT04767480 T AT 04767480T AT E358195 T1 ATE358195 T1 AT E358195T1
- Authority
- AT
- Austria
- Prior art keywords
- synthesis
- obtained therefrom
- material obtained
- crystalline
- crystalline material
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/02—Production of homogeneous polycrystalline material with defined structure directly from the solid state
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/66—Crystals of complex geometrical shape, e.g. tubes, cylinders
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Composite Materials (AREA)
- Thermal Sciences (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Catalysts (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Thin Film Transistor (AREA)
- Silicon Compounds (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0307849A FR2856702B1 (fr) | 2003-06-27 | 2003-06-27 | Procede de synthese d'un materiau cristallin et materiau obtenu par ce procede |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE358195T1 true ATE358195T1 (de) | 2007-04-15 |
Family
ID=33515497
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04767480T ATE358195T1 (de) | 2003-06-27 | 2004-06-25 | Verfahren zur synthese eines kristallinen materials und danach erhaltenes material |
Country Status (8)
Country | Link |
---|---|
US (1) | US20060280945A1 (de) |
EP (1) | EP1639157B1 (de) |
JP (1) | JP2007516145A (de) |
KR (1) | KR20060017888A (de) |
AT (1) | ATE358195T1 (de) |
DE (1) | DE602004005594T2 (de) |
FR (1) | FR2856702B1 (de) |
WO (1) | WO2005001168A1 (de) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1974077A2 (de) * | 2006-01-20 | 2008-10-01 | BP Corporation North America Inc. | Verfahren und vorrichtungen zur herstellung von monokristallin-formsilicium und monokristallin-formsiliciumkörper für die fotovoltaik |
US8440157B2 (en) * | 2007-07-20 | 2013-05-14 | Amg Idealcast Solar Corporation | Methods and apparatuses for manufacturing cast silicon from seed crystals |
CN101796226A (zh) * | 2007-07-20 | 2010-08-04 | Bp北美公司 | 由籽晶制造铸造硅的方法 |
WO2009015168A1 (en) | 2007-07-25 | 2009-01-29 | Bp Corporation North America Inc. | Methods for manufacturing geometric multi-crystalline cast materials |
US8709154B2 (en) | 2007-07-25 | 2014-04-29 | Amg Idealcast Solar Corporation | Methods for manufacturing monocrystalline or near-monocrystalline cast materials |
KR100952048B1 (ko) * | 2007-11-13 | 2010-04-07 | 연세대학교 산학협력단 | 실리콘 나노 구조체를 이용한 액상 제조 공정 기반의실리콘박막 결정화방법 |
CN102723408B (zh) * | 2011-03-29 | 2015-04-15 | 清华大学 | 半导体外延结构的制备方法 |
US11133390B2 (en) | 2013-03-15 | 2021-09-28 | The Boeing Company | Low temperature, thin film crystallization method and products prepared therefrom |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5827773A (en) * | 1997-03-07 | 1998-10-27 | Sharp Microelectronics Technology, Inc. | Method for forming polycrystalline silicon from the crystallization of microcrystalline silicon |
JP4599746B2 (ja) * | 2001-04-04 | 2010-12-15 | ソニー株式会社 | 多結晶性半導体薄膜の形成方法及び半導体装置の製造方法 |
US6858455B2 (en) * | 2001-05-25 | 2005-02-22 | Ut-Battelle, Llc | Gated fabrication of nanostructure field emission cathode material within a device |
US20030124717A1 (en) * | 2001-11-26 | 2003-07-03 | Yuji Awano | Method of manufacturing carbon cylindrical structures and biopolymer detection device |
FR2832995B1 (fr) * | 2001-12-04 | 2004-02-27 | Thales Sa | Procede de croissance catalytique de nanotubes ou nanofibres comprenant une barriere de diffusion de type alliage nisi |
US6872645B2 (en) * | 2002-04-02 | 2005-03-29 | Nanosys, Inc. | Methods of positioning and/or orienting nanostructures |
JP3810357B2 (ja) * | 2002-08-12 | 2006-08-16 | 富士通株式会社 | オフ基板上でのカーボンナノチューブの製造方法 |
-
2003
- 2003-06-27 FR FR0307849A patent/FR2856702B1/fr not_active Expired - Fee Related
-
2004
- 2004-06-25 AT AT04767480T patent/ATE358195T1/de not_active IP Right Cessation
- 2004-06-25 KR KR1020057025095A patent/KR20060017888A/ko not_active Application Discontinuation
- 2004-06-25 US US10/561,761 patent/US20060280945A1/en not_active Abandoned
- 2004-06-25 WO PCT/FR2004/001634 patent/WO2005001168A1/fr active IP Right Grant
- 2004-06-25 EP EP04767480A patent/EP1639157B1/de not_active Expired - Lifetime
- 2004-06-25 DE DE602004005594T patent/DE602004005594T2/de not_active Expired - Fee Related
- 2004-06-25 JP JP2006516333A patent/JP2007516145A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE602004005594T2 (de) | 2007-12-13 |
EP1639157A1 (de) | 2006-03-29 |
FR2856702B1 (fr) | 2005-09-09 |
WO2005001168A1 (fr) | 2005-01-06 |
FR2856702A1 (fr) | 2004-12-31 |
JP2007516145A (ja) | 2007-06-21 |
DE602004005594D1 (de) | 2007-05-10 |
KR20060017888A (ko) | 2006-02-27 |
EP1639157B1 (de) | 2007-03-28 |
US20060280945A1 (en) | 2006-12-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
UEP | Publication of translation of european patent specification |
Ref document number: 1639157 Country of ref document: EP |
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REN | Ceased due to non-payment of the annual fee |