ATE227487T1 - Bildaufnahmesystem, integrierte festkörperbildaufnahmehalbleiterschaltung - Google Patents
Bildaufnahmesystem, integrierte festkörperbildaufnahmehalbleiterschaltungInfo
- Publication number
- ATE227487T1 ATE227487T1 AT96926633T AT96926633T ATE227487T1 AT E227487 T1 ATE227487 T1 AT E227487T1 AT 96926633 T AT96926633 T AT 96926633T AT 96926633 T AT96926633 T AT 96926633T AT E227487 T1 ATE227487 T1 AT E227487T1
- Authority
- AT
- Austria
- Prior art keywords
- image recording
- timing
- photoelectric conversion
- conversion element
- signal
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000007787 solid Substances 0.000 title 1
- 238000006243 chemical reaction Methods 0.000 abstract 4
- 230000003321 amplification Effects 0.000 abstract 3
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 3
- 230000008030 elimination Effects 0.000 abstract 2
- 238000003379 elimination reaction Methods 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
- H04N25/623—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by evacuation via the output or reset lines
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
- H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
- H04N25/677—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction for reducing the column or line fixed pattern noise
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
- Facsimile Heads (AREA)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20614395 | 1995-08-11 | ||
JP20614295 | 1995-08-11 | ||
JP20614495 | 1995-08-11 | ||
JP20614095 | 1995-08-11 | ||
JP5322096 | 1996-03-11 | ||
JP5984596 | 1996-03-15 | ||
PCT/JP1996/002285 WO1997007631A1 (fr) | 1995-08-11 | 1996-08-12 | Systeme d'imagerie, dispositif d'imagerie a circuit integre a semi-conducteur, et procede de sortie differentielle utilise dans le systeme |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE227487T1 true ATE227487T1 (de) | 2002-11-15 |
Family
ID=27550518
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT96926633T ATE227487T1 (de) | 1995-08-11 | 1996-08-12 | Bildaufnahmesystem, integrierte festkörperbildaufnahmehalbleiterschaltung |
Country Status (7)
Country | Link |
---|---|
US (1) | US7113213B2 (de) |
EP (1) | EP0845900B1 (de) |
JP (1) | JP3966557B2 (de) |
KR (1) | KR100267383B1 (de) |
AT (1) | ATE227487T1 (de) |
DE (1) | DE69624714T2 (de) |
WO (1) | WO1997007631A1 (de) |
Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ATE227487T1 (de) | 1995-08-11 | 2002-11-15 | Toshiba Kk | Bildaufnahmesystem, integrierte festkörperbildaufnahmehalbleiterschaltung |
US6977684B1 (en) | 1998-04-30 | 2005-12-20 | Canon Kabushiki Kaisha | Arrangement of circuits in pixels, each circuit shared by a plurality of pixels, in image sensing apparatus |
JP4200545B2 (ja) * | 1998-06-08 | 2008-12-24 | ソニー株式会社 | 固体撮像素子およびその駆動方法、並びにカメラシステム |
US6677996B1 (en) * | 1999-04-21 | 2004-01-13 | Pictos Technologies, Inc. | Real time camera exposure control |
US6704050B1 (en) | 1999-04-23 | 2004-03-09 | Polaroid Corporation | Active-pixel image sensing device with linear mode voltage to current conversion |
JP2001298663A (ja) | 2000-04-12 | 2001-10-26 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその駆動方法 |
JP3658278B2 (ja) * | 2000-05-16 | 2005-06-08 | キヤノン株式会社 | 固体撮像装置およびそれを用いた固体撮像システム |
US7430025B2 (en) | 2000-08-23 | 2008-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Portable electronic device |
JP2002189533A (ja) * | 2000-08-23 | 2002-07-05 | Semiconductor Energy Lab Co Ltd | 携帯型の電子機器 |
US6750437B2 (en) * | 2000-08-28 | 2004-06-15 | Canon Kabushiki Kaisha | Image pickup apparatus that suitably adjusts a focus |
US6781567B2 (en) * | 2000-09-29 | 2004-08-24 | Seiko Epson Corporation | Driving method for electro-optical device, electro-optical device, and electronic apparatus |
CN101257743B (zh) * | 2001-08-29 | 2011-05-25 | 株式会社半导体能源研究所 | 发光器件及这种发光器件的驱动方法 |
JP4135360B2 (ja) * | 2001-12-25 | 2008-08-20 | ソニー株式会社 | 固体撮像装置 |
JP4082056B2 (ja) | 2002-03-28 | 2008-04-30 | コニカミノルタホールディングス株式会社 | 固体撮像装置 |
JP2003324239A (ja) * | 2002-04-26 | 2003-11-14 | Motorola Inc | 発光素子駆動回路 |
JP3934506B2 (ja) * | 2002-08-06 | 2007-06-20 | オリンパス株式会社 | 撮像システムおよび画像処理プログラム |
JP2004112422A (ja) | 2002-09-19 | 2004-04-08 | Canon Inc | 撮像装置 |
US20040085469A1 (en) * | 2002-10-30 | 2004-05-06 | Eastman Kodak Company | Method to eliminate bus voltage drop effects for pixel source follower amplifiers |
JP3988189B2 (ja) * | 2002-11-20 | 2007-10-10 | ソニー株式会社 | 固体撮像装置 |
US7436010B2 (en) | 2003-02-13 | 2008-10-14 | Matsushita Electric Industrial Co., Ltd. | Solid state imaging apparatus, method for driving the same and camera using the same |
EP1463306B8 (de) * | 2003-03-25 | 2009-11-11 | Panasonic Corporation | Bildaufnahmevorrichtung, die Detailverlust schattiger Bereiche vermeidet |
US7136763B2 (en) * | 2003-06-17 | 2006-11-14 | General Motors Corporation | Increasing current and voltage sensor accuracy and resolution in electric and hybrid electric vehicles |
KR100959775B1 (ko) * | 2003-09-25 | 2010-05-27 | 삼성전자주식회사 | 스캔 드라이버와, 이를 갖는 평판표시장치 및 이의 구동방법 |
US7385636B2 (en) * | 2004-04-30 | 2008-06-10 | Eastman Kodak Company | Low noise sample and hold circuit for image sensors |
JP2006005711A (ja) * | 2004-06-18 | 2006-01-05 | Iwate Toshiba Electronics Co Ltd | Cmosイメージセンサ |
CN1981517B (zh) * | 2004-07-06 | 2010-05-26 | 松下电器产业株式会社 | 固体摄像装置 |
JP2006033631A (ja) * | 2004-07-20 | 2006-02-02 | Matsushita Electric Ind Co Ltd | 固体撮像装置及びサンプリング回路 |
JP4425809B2 (ja) * | 2005-02-03 | 2010-03-03 | 富士通マイクロエレクトロニクス株式会社 | 撮像装置 |
CN101069418A (zh) * | 2005-02-28 | 2007-11-07 | 松下电器产业株式会社 | 固体摄像装置及其驱动方法 |
US7568628B2 (en) | 2005-03-11 | 2009-08-04 | Hand Held Products, Inc. | Bar code reading device with global electronic shutter control |
JP4768305B2 (ja) * | 2005-04-15 | 2011-09-07 | 岩手東芝エレクトロニクス株式会社 | 固体撮像装置 |
US7770799B2 (en) | 2005-06-03 | 2010-08-10 | Hand Held Products, Inc. | Optical reader having reduced specular reflection read failures |
US9107568B2 (en) * | 2005-06-17 | 2015-08-18 | Intellectual Ventures Ii Llc | Capsule type endoscope and method for fabricating the same |
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JP4828914B2 (ja) * | 2005-10-28 | 2011-11-30 | 株式会社東芝 | 固体撮像装置およびその駆動方法 |
US7952158B2 (en) | 2007-01-24 | 2011-05-31 | Micron Technology, Inc. | Elevated pocket pixels, imaging devices and systems including the same and method of forming the same |
JP5016255B2 (ja) * | 2006-02-22 | 2012-09-05 | 富士フイルム株式会社 | ノイズ低減装置ならびにその制御方法およびその制御プログラムならびに撮像装置およびディジタル・カメラ |
JP2008011297A (ja) * | 2006-06-30 | 2008-01-17 | Fujitsu Ltd | 撮像装置及び増幅回路 |
US8184190B2 (en) * | 2006-11-28 | 2012-05-22 | Youliza, Gehts B.V. Limited Liability Company | Simultaneous global shutter and correlated double sampling read out in multiple photosensor pixels |
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DE102008031498B4 (de) * | 2008-07-03 | 2012-03-08 | Infineon Technologies Ag | Taktbestimmung eines Sensors |
JP5045380B2 (ja) | 2007-11-13 | 2012-10-10 | ソニー株式会社 | 撮像装置および撮像データ補正方法並びにプログラム |
US8059173B2 (en) * | 2008-09-26 | 2011-11-15 | On Semiconductor Trading Ltd. | Correlated double sampling pixel and method |
US20100098399A1 (en) * | 2008-10-17 | 2010-04-22 | Kurt Breish | High intensity, strobed led micro-strip for microfilm imaging system and methods |
WO2010058631A1 (ja) * | 2008-11-21 | 2010-05-27 | シャープ株式会社 | 2次元センサアレイ、表示装置、電子機器 |
JP5495711B2 (ja) * | 2009-10-26 | 2014-05-21 | キヤノン株式会社 | 撮像装置及び撮像システム、それらの制御方法及びそのプログラム |
TWI507934B (zh) * | 2009-11-20 | 2015-11-11 | Semiconductor Energy Lab | 顯示裝置 |
JP5866089B2 (ja) * | 2009-11-20 | 2016-02-17 | 株式会社半導体エネルギー研究所 | 電子機器 |
KR102031848B1 (ko) | 2010-01-20 | 2019-10-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전자 기기 및 전자 시스템 |
JP5470181B2 (ja) | 2010-07-09 | 2014-04-16 | パナソニック株式会社 | 固体撮像装置 |
US9052497B2 (en) | 2011-03-10 | 2015-06-09 | King Abdulaziz City For Science And Technology | Computing imaging data using intensity correlation interferometry |
US8976340B2 (en) * | 2011-04-15 | 2015-03-10 | Advanced Scientific Concepts, Inc. | Ladar sensor for landing, docking and approach |
US9099214B2 (en) | 2011-04-19 | 2015-08-04 | King Abdulaziz City For Science And Technology | Controlling microparticles through a light field having controllable intensity and periodicity of maxima thereof |
JP6183718B2 (ja) * | 2012-06-25 | 2017-08-23 | パナソニックIpマネジメント株式会社 | 固体撮像装置 |
JP6740905B2 (ja) * | 2015-02-12 | 2020-08-19 | ソニー株式会社 | 撮像装置およびその制御方法 |
JP7327916B2 (ja) * | 2018-09-11 | 2023-08-16 | キヤノン株式会社 | 光電変換装置および機器 |
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JP3018546B2 (ja) | 1991-03-18 | 2000-03-13 | ソニー株式会社 | 固体撮像装置 |
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JPH04348566A (ja) | 1991-05-27 | 1992-12-03 | Nec Yamagata Ltd | 固体撮像装置 |
JPH0556357A (ja) | 1991-08-27 | 1993-03-05 | Konica Corp | 固体撮像装置 |
JP2965777B2 (ja) | 1992-01-29 | 1999-10-18 | オリンパス光学工業株式会社 | 固体撮像装置 |
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JPH06189199A (ja) * | 1992-12-21 | 1994-07-08 | Olympus Optical Co Ltd | 固体撮像装置 |
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JPH06217205A (ja) * | 1993-01-13 | 1994-08-05 | Sony Corp | 固体撮像素子 |
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ATE227487T1 (de) | 1995-08-11 | 2002-11-15 | Toshiba Kk | Bildaufnahmesystem, integrierte festkörperbildaufnahmehalbleiterschaltung |
-
1996
- 1996-08-12 AT AT96926633T patent/ATE227487T1/de not_active IP Right Cessation
- 1996-08-12 KR KR1019980701011A patent/KR100267383B1/ko not_active IP Right Cessation
- 1996-08-12 JP JP50914497A patent/JP3966557B2/ja not_active Expired - Fee Related
- 1996-08-12 DE DE69624714T patent/DE69624714T2/de not_active Expired - Lifetime
- 1996-08-12 WO PCT/JP1996/002285 patent/WO1997007631A1/ja active IP Right Grant
- 1996-08-12 EP EP96926633A patent/EP0845900B1/de not_active Expired - Lifetime
-
2001
- 2001-08-13 US US09/927,632 patent/US7113213B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP3966557B2 (ja) | 2007-08-29 |
KR19990036343A (ko) | 1999-05-25 |
KR100267383B1 (ko) | 2000-10-16 |
EP0845900B1 (de) | 2002-11-06 |
DE69624714T2 (de) | 2003-08-07 |
EP0845900A4 (de) | 1998-12-16 |
EP0845900A1 (de) | 1998-06-03 |
US20010052941A1 (en) | 2001-12-20 |
US7113213B2 (en) | 2006-09-26 |
DE69624714D1 (de) | 2002-12-12 |
WO1997007631A1 (fr) | 1997-02-27 |
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