ATE211306T1 - Laterale bipolare transistoranordnungen mit isolierter steuerelektrode mit geteilter anode - Google Patents

Laterale bipolare transistoranordnungen mit isolierter steuerelektrode mit geteilter anode

Info

Publication number
ATE211306T1
ATE211306T1 AT89202351T AT89202351T ATE211306T1 AT E211306 T1 ATE211306 T1 AT E211306T1 AT 89202351 T AT89202351 T AT 89202351T AT 89202351 T AT89202351 T AT 89202351T AT E211306 T1 ATE211306 T1 AT E211306T1
Authority
AT
Austria
Prior art keywords
anode
layer
conductivity type
bipolar transistor
control electrode
Prior art date
Application number
AT89202351T
Other languages
English (en)
Inventor
Satyetdranath Mukherjee
Paul Gin-Yea Tsui
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE211306T1 publication Critical patent/ATE211306T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Thin Film Transistor (AREA)
AT89202351T 1988-09-22 1989-09-18 Laterale bipolare transistoranordnungen mit isolierter steuerelektrode mit geteilter anode ATE211306T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US24902888A 1988-09-22 1988-09-22
US33698289A 1989-04-12 1989-04-12

Publications (1)

Publication Number Publication Date
ATE211306T1 true ATE211306T1 (de) 2002-01-15

Family

ID=26939765

Family Applications (1)

Application Number Title Priority Date Filing Date
AT89202351T ATE211306T1 (de) 1988-09-22 1989-09-18 Laterale bipolare transistoranordnungen mit isolierter steuerelektrode mit geteilter anode

Country Status (5)

Country Link
EP (1) EP0361589B1 (de)
JP (1) JPH079990B2 (de)
KR (1) KR0147846B1 (de)
AT (1) ATE211306T1 (de)
DE (1) DE68929359T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5355015A (en) * 1990-12-13 1994-10-11 National Semiconductor Corporation High breakdown lateral PNP transistor
US5227653A (en) * 1991-08-07 1993-07-13 North American Philips Corp. Lateral trench-gate bipolar transistors
DE4309764C2 (de) * 1993-03-25 1997-01-30 Siemens Ag Leistungs-MOSFET
EP0761016B1 (de) * 1995-03-23 2002-10-16 Koninklijke Philips Electronics N.V. Halbleiteranordnung mit einem ligbt element
JP3824310B2 (ja) * 2002-01-18 2006-09-20 ローム株式会社 二重拡散型ｍｏｓｆｅｔおよびこれを用いた半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL73328A (en) * 1984-10-26 1990-02-09 Tzora Furniture Ind Ltd Rotatable joint with coaxially assembled parts
JPS63173365A (ja) * 1986-11-26 1988-07-16 ゼネラル・エレクトリック・カンパニイ ラテラル形絶縁ゲート半導体装置とその製法
ATE73963T1 (de) * 1986-12-22 1992-04-15 Philips Nv Komplementaere, laterale silizium-aufisolatorgleichrichter mit isoliertem gate.
JPH0821713B2 (ja) * 1987-02-26 1996-03-04 株式会社東芝 導電変調型ｍｏｓｆｅｔ

Also Published As

Publication number Publication date
JPH079990B2 (ja) 1995-02-01
KR0147846B1 (ko) 1998-08-01
DE68929359D1 (de) 2002-01-31
JPH02139971A (ja) 1990-05-29
EP0361589B1 (de) 2001-12-19
EP0361589A1 (de) 1990-04-04
DE68929359T2 (de) 2002-08-22
KR900005596A (ko) 1990-04-14

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