SE8703269L - Foerbaettrad konstruktion hos sos-transistor - Google Patents
Foerbaettrad konstruktion hos sos-transistorInfo
- Publication number
- SE8703269L SE8703269L SE8703269A SE8703269A SE8703269L SE 8703269 L SE8703269 L SE 8703269L SE 8703269 A SE8703269 A SE 8703269A SE 8703269 A SE8703269 A SE 8703269A SE 8703269 L SE8703269 L SE 8703269L
- Authority
- SE
- Sweden
- Prior art keywords
- transistor
- region
- foerbaettrad
- construction
- doped region
- Prior art date
Links
- 238000010276 construction Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78612—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE8703269A SE461490B (sv) | 1987-08-24 | 1987-08-24 | Mos-transistor utbildad paa ett isolerande underlag |
EP88113464A EP0304811B1 (en) | 1987-08-24 | 1988-08-19 | Mos transistor |
DE88113464T DE3881304T2 (de) | 1987-08-24 | 1988-08-19 | MOS-Transistor. |
US07/235,075 US4969023A (en) | 1987-08-24 | 1988-08-23 | SOS transistor structure |
JP63207493A JPS6468970A (en) | 1987-08-24 | 1988-08-23 | Mos transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE8703269A SE461490B (sv) | 1987-08-24 | 1987-08-24 | Mos-transistor utbildad paa ett isolerande underlag |
Publications (3)
Publication Number | Publication Date |
---|---|
SE8703269D0 SE8703269D0 (sv) | 1987-08-24 |
SE8703269L true SE8703269L (sv) | 1989-02-25 |
SE461490B SE461490B (sv) | 1990-02-19 |
Family
ID=20369361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE8703269A SE461490B (sv) | 1987-08-24 | 1987-08-24 | Mos-transistor utbildad paa ett isolerande underlag |
Country Status (5)
Country | Link |
---|---|
US (1) | US4969023A (sv) |
EP (1) | EP0304811B1 (sv) |
JP (1) | JPS6468970A (sv) |
DE (1) | DE3881304T2 (sv) |
SE (1) | SE461490B (sv) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5144390A (en) * | 1988-09-02 | 1992-09-01 | Texas Instruments Incorporated | Silicon-on insulator transistor with internal body node to source node connection |
JP2507567B2 (ja) * | 1988-11-25 | 1996-06-12 | 三菱電機株式会社 | 絶縁体基板上の半導体層に形成されたmos型電界効果トランジスタ |
US5160989A (en) * | 1989-06-13 | 1992-11-03 | Texas Instruments Incorporated | Extended body contact for semiconductor over insulator transistor |
FR2648623B1 (fr) * | 1989-06-19 | 1994-07-08 | France Etat | Structure de transistor mos sur isolant avec prise de caisson reliee a la source et procede de fabrication |
US5316960A (en) * | 1989-07-11 | 1994-05-31 | Ricoh Company, Ltd. | C-MOS thin film transistor device manufacturing method |
US5060035A (en) * | 1989-07-13 | 1991-10-22 | Mitsubishi Denki Kabushiki Kaisha | Silicon-on-insulator metal oxide semiconductor device having conductive sidewall structure |
US5264720A (en) * | 1989-09-22 | 1993-11-23 | Nippondenso Co., Ltd. | High withstanding voltage transistor |
JP2994670B2 (ja) | 1989-12-02 | 1999-12-27 | 忠弘 大見 | 半導体装置及びその製造方法 |
US5172208A (en) * | 1990-07-30 | 1992-12-15 | Texas Instruments Incorporated | Thyristor |
US5240865A (en) * | 1990-07-30 | 1993-08-31 | Texas Instruments Incorporated | Method of forming a thyristor on an SOI substrate |
TW214603B (en) * | 1992-05-13 | 1993-10-11 | Seiko Electron Co Ltd | Semiconductor device |
KR940022907A (ko) * | 1993-03-31 | 1994-10-21 | 이헌조 | 비대칭 엘디디(ldd) 접합 박막트랜지스터 |
US5773864A (en) * | 1995-04-28 | 1998-06-30 | National Semiconductor Corporation | CMOS interface circuit formed in silicon-on-insulator substrate |
JPH09102609A (ja) * | 1995-08-03 | 1997-04-15 | Seiko Instr Inc | 半導体装置 |
KR20000003758A (ko) * | 1998-06-29 | 2000-01-25 | 김영환 | 박막 트랜지스터 액정표시소자 |
US6452233B1 (en) * | 1999-03-23 | 2002-09-17 | Citizen Watch Co., Ltd. | SOI device having a leakage stopping layer |
JP2002261292A (ja) * | 2000-12-26 | 2002-09-13 | Toshiba Corp | 半導体装置及びその製造方法 |
JP3845272B2 (ja) * | 2001-06-19 | 2006-11-15 | シャープ株式会社 | Sram及びその製造方法 |
JP2003031811A (ja) | 2001-07-13 | 2003-01-31 | Mitsubishi Heavy Ind Ltd | トランジスタ及び半導体装置 |
EP1519421A1 (en) * | 2003-09-25 | 2005-03-30 | Interuniversitair Microelektronica Centrum Vzw | Multiple gate semiconductor device and method for forming same |
EP1498958B1 (en) * | 2003-07-18 | 2014-10-15 | Imec | Method for forming a mutiple gate semiconductor device |
TWI463526B (zh) * | 2004-06-24 | 2014-12-01 | Ibm | 改良具應力矽之cmos元件的方法及以該方法製備而成的元件 |
US7655511B2 (en) | 2005-11-03 | 2010-02-02 | International Business Machines Corporation | Gate electrode stress control for finFET performance enhancement |
US7635620B2 (en) | 2006-01-10 | 2009-12-22 | International Business Machines Corporation | Semiconductor device structure having enhanced performance FET device |
US20070158743A1 (en) * | 2006-01-11 | 2007-07-12 | International Business Machines Corporation | Thin silicon single diffusion field effect transistor for enhanced drive performance with stress film liners |
US7790540B2 (en) | 2006-08-25 | 2010-09-07 | International Business Machines Corporation | Structure and method to use low k stress liner to reduce parasitic capacitance |
KR101312259B1 (ko) * | 2007-02-09 | 2013-09-25 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조방법 |
US8115254B2 (en) | 2007-09-25 | 2012-02-14 | International Business Machines Corporation | Semiconductor-on-insulator structures including a trench containing an insulator stressor plug and method of fabricating same |
US8492846B2 (en) | 2007-11-15 | 2013-07-23 | International Business Machines Corporation | Stress-generating shallow trench isolation structure having dual composition |
US8598006B2 (en) | 2010-03-16 | 2013-12-03 | International Business Machines Corporation | Strain preserving ion implantation methods |
JP2012256928A (ja) * | 2012-08-15 | 2012-12-27 | Mitsubishi Heavy Ind Ltd | トランジスタ及び半導体装置 |
JP2015035617A (ja) * | 2014-10-15 | 2015-02-19 | 三菱重工業株式会社 | トランジスタ及び半導体装置 |
JP6263162B2 (ja) * | 2015-12-21 | 2018-01-17 | 三菱重工業株式会社 | トランジスタ |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3958266A (en) * | 1974-04-19 | 1976-05-18 | Rca Corporation | Deep depletion insulated gate field effect transistors |
JPS5534582B2 (sv) * | 1974-06-24 | 1980-09-08 | ||
JPS51147186A (en) * | 1975-06-12 | 1976-12-17 | Fujitsu Ltd | Semiconductor device |
JPS5727069A (en) * | 1980-07-25 | 1982-02-13 | Toshiba Corp | Mos type simiconductor device |
JPS57190362A (en) * | 1981-05-19 | 1982-11-22 | Nec Corp | Semiconductor device |
JPS5898969A (ja) * | 1981-12-09 | 1983-06-13 | Nec Corp | 半導体装置 |
JPS6115369A (ja) * | 1984-07-02 | 1986-01-23 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置及びその製造方法 |
JPH0680830B2 (ja) * | 1985-04-08 | 1994-10-12 | 株式会社日立製作所 | 半導体装置 |
JPH0682840B2 (ja) * | 1985-09-25 | 1994-10-19 | 日本電信電話株式会社 | Mos形半導体装置 |
US4797721A (en) * | 1987-04-13 | 1989-01-10 | General Electric Company | Radiation hardened semiconductor device and method of making the same |
-
1987
- 1987-08-24 SE SE8703269A patent/SE461490B/sv not_active IP Right Cessation
-
1988
- 1988-08-19 EP EP88113464A patent/EP0304811B1/en not_active Expired - Lifetime
- 1988-08-19 DE DE88113464T patent/DE3881304T2/de not_active Expired - Fee Related
- 1988-08-23 US US07/235,075 patent/US4969023A/en not_active Expired - Fee Related
- 1988-08-23 JP JP63207493A patent/JPS6468970A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US4969023A (en) | 1990-11-06 |
EP0304811A1 (en) | 1989-03-01 |
SE461490B (sv) | 1990-02-19 |
JPS6468970A (en) | 1989-03-15 |
DE3881304D1 (de) | 1993-07-01 |
DE3881304T2 (de) | 1993-12-16 |
EP0304811B1 (en) | 1993-05-26 |
SE8703269D0 (sv) | 1987-08-24 |
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