ATA225484A - Strahlungsempfindliche halbleiteranordnung - Google Patents
Strahlungsempfindliche halbleiteranordnungInfo
- Publication number
- ATA225484A ATA225484A AT0225484A AT225484A ATA225484A AT A225484 A ATA225484 A AT A225484A AT 0225484 A AT0225484 A AT 0225484A AT 225484 A AT225484 A AT 225484A AT A225484 A ATA225484 A AT A225484A
- Authority
- AT
- Austria
- Prior art keywords
- radiation
- semiconductor arrangement
- sensitive semiconductor
- sensitive
- arrangement
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02027—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for devices working in avalanche mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Measurement Of Radiation (AREA)
- Curing Cements, Concrete, And Artificial Stone (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NLAANVRAGE8302516,A NL187416C (nl) | 1983-07-14 | 1983-07-14 | Stralingsgevoelige halfgeleiderinrichting. |
Publications (2)
Publication Number | Publication Date |
---|---|
ATA225484A true ATA225484A (de) | 1990-10-15 |
AT392704B AT392704B (de) | 1991-05-27 |
Family
ID=19842158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT2254/84A AT392704B (de) | 1983-07-14 | 1984-07-12 | Strahlungsempfindliche halbleiteranordnung |
Country Status (12)
Country | Link |
---|---|
US (1) | US4652899A (de) |
JP (2) | JPS6126539A (de) |
AT (1) | AT392704B (de) |
AU (1) | AU3057484A (de) |
CA (1) | CA1243103A (de) |
DE (1) | DE3425309C2 (de) |
ES (1) | ES8505144A1 (de) |
FR (1) | FR2549295B1 (de) |
GB (1) | GB2143373B (de) |
IT (1) | IT1176383B (de) |
NL (1) | NL187416C (de) |
SE (2) | SE8403661L (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2628562A1 (fr) * | 1988-03-11 | 1989-09-15 | Thomson Csf | Dispositif d'imagerie a structure matricielle |
US5049962A (en) * | 1990-03-07 | 1991-09-17 | Santa Barbara Research Center | Control of optical crosstalk between adjacent photodetecting regions |
JP2711038B2 (ja) * | 1991-11-20 | 1998-02-10 | 富士通株式会社 | 光検知装置 |
EP1032049B1 (de) | 1999-02-25 | 2011-07-13 | Canon Kabushiki Kaisha | Photoelektrisches Umwandlungselement |
JP3467013B2 (ja) | 1999-12-06 | 2003-11-17 | キヤノン株式会社 | 固体撮像装置 |
US6960817B2 (en) * | 2000-04-21 | 2005-11-01 | Canon Kabushiki Kaisha | Solid-state imaging device |
RU2290721C2 (ru) | 2004-05-05 | 2006-12-27 | Борис Анатольевич Долгошеин | Кремниевый фотоэлектронный умножитель (варианты) и ячейка для кремниевого фотоэлектронного умножителя |
CN101379615B (zh) | 2006-02-01 | 2013-06-12 | 皇家飞利浦电子股份有限公司 | 盖革式雪崩光电二极管 |
WO2010140944A1 (en) * | 2009-06-05 | 2010-12-09 | Rti Electronics Ab | X-ray detection device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1072080A (en) * | 1965-12-31 | 1967-06-14 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
US3501678A (en) * | 1967-06-28 | 1970-03-17 | Ortec | Tapered-shelf semiconductor |
US3832732A (en) * | 1973-01-11 | 1974-08-27 | Westinghouse Electric Corp | Light-activated lateral thyristor and ac switch |
US3994012A (en) * | 1975-05-07 | 1976-11-23 | The Regents Of The University Of Minnesota | Photovoltaic semi-conductor devices |
DE2927126A1 (de) * | 1979-07-05 | 1981-01-08 | Standard Elektrik Lorenz Ag | Photodiode |
US4394676A (en) * | 1980-12-17 | 1983-07-19 | Agouridis Dimitrios C | Photovoltaic radiation detector element |
-
1983
- 1983-07-14 NL NLAANVRAGE8302516,A patent/NL187416C/xx not_active IP Right Cessation
-
1984
- 1984-07-02 US US06/627,309 patent/US4652899A/en not_active Expired - Fee Related
- 1984-07-06 FR FR8410787A patent/FR2549295B1/fr not_active Expired
- 1984-07-10 DE DE3425309A patent/DE3425309C2/de not_active Expired - Fee Related
- 1984-07-11 CA CA000458633A patent/CA1243103A/en not_active Expired
- 1984-07-11 SE SE8403661D patent/SE8403661L/xx not_active Application Discontinuation
- 1984-07-11 IT IT21834/84A patent/IT1176383B/it active
- 1984-07-11 SE SE8403661A patent/SE460002B/sv not_active IP Right Cessation
- 1984-07-11 JP JP14248184A patent/JPS6126539A/ja active Pending
- 1984-07-11 GB GB08417670A patent/GB2143373B/en not_active Expired
- 1984-07-11 JP JP59142479A patent/JPS6057677A/ja active Granted
- 1984-07-11 ES ES534204A patent/ES8505144A1/es not_active Expired
- 1984-07-12 AT AT2254/84A patent/AT392704B/de not_active IP Right Cessation
- 1984-07-13 AU AU30574/84A patent/AU3057484A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
FR2549295B1 (fr) | 1987-07-31 |
IT8421834A1 (it) | 1986-01-11 |
SE8403661D0 (sv) | 1984-07-11 |
JPS6126539A (ja) | 1986-02-05 |
JPS6057677A (ja) | 1985-04-03 |
CA1243103A (en) | 1988-10-11 |
AT392704B (de) | 1991-05-27 |
GB8417670D0 (en) | 1984-08-15 |
IT1176383B (it) | 1987-08-18 |
ES534204A0 (es) | 1985-04-16 |
DE3425309C2 (de) | 1994-02-10 |
GB2143373A (en) | 1985-02-06 |
DE3425309A1 (de) | 1985-01-24 |
IT8421834A0 (it) | 1984-07-11 |
FR2549295A1 (fr) | 1985-01-18 |
GB2143373B (en) | 1986-11-12 |
SE8403661L (sv) | 1985-01-15 |
AU3057484A (en) | 1985-01-17 |
SE460002B (sv) | 1989-08-28 |
NL187416C (nl) | 1991-09-16 |
NL187416B (nl) | 1991-04-16 |
US4652899A (en) | 1987-03-24 |
NL8302516A (nl) | 1985-02-01 |
JPH0527997B2 (de) | 1993-04-22 |
ES8505144A1 (es) | 1985-04-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ELJ | Ceased due to non-payment of the annual fee |