YU41806B - Method of making of several transistors from a semiconductor wafer - Google Patents
Method of making of several transistors from a semiconductor waferInfo
- Publication number
- YU41806B YU41806B YU115/72A YU11572A YU41806B YU 41806 B YU41806 B YU 41806B YU 115/72 A YU115/72 A YU 115/72A YU 11572 A YU11572 A YU 11572A YU 41806 B YU41806 B YU 41806B
- Authority
- YU
- Yugoslavia
- Prior art keywords
- making
- semiconductor wafer
- several transistors
- transistors
- several
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2637—Circuits therefor for testing other individual devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2644—Adaptations of individual semiconductor devices to facilitate the testing thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/162—Testing steps
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10978371A | 1971-01-26 | 1971-01-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
YU11572A YU11572A (en) | 1984-02-29 |
YU41806B true YU41806B (en) | 1988-02-29 |
Family
ID=22329546
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
YU115/72A YU41806B (en) | 1971-01-26 | 1972-01-17 | Method of making of several transistors from a semiconductor wafer |
Country Status (11)
Country | Link |
---|---|
US (1) | US3676229A (fr) |
JP (1) | JPS5145476B1 (fr) |
AU (1) | AU463388B2 (fr) |
BE (1) | BE778430A (fr) |
CA (1) | CA927523A (fr) |
DE (1) | DE2201833C3 (fr) |
FR (1) | FR2123285B1 (fr) |
GB (1) | GB1344395A (fr) |
NL (1) | NL7200985A (fr) |
SE (1) | SE381776B (fr) |
YU (1) | YU41806B (fr) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3895977A (en) * | 1973-12-20 | 1975-07-22 | Harris Corp | Method of fabricating a bipolar transistor |
US4079505A (en) * | 1974-03-14 | 1978-03-21 | Fujitsu Limited | Method for manufacturing a transistor |
FR2280203A1 (fr) * | 1974-07-26 | 1976-02-20 | Thomson Csf | Procede d'ajustement de tension de seuil de transistors a effet de champ |
US3999217A (en) * | 1975-02-26 | 1976-12-21 | Rca Corporation | Semiconductor device having parallel path for current flow |
DE2656420A1 (de) * | 1976-12-13 | 1978-06-15 | Siemens Ag | Transistor mit innerer gegenkopplung |
DE2949590A1 (de) * | 1979-12-10 | 1981-06-11 | Robert Bosch do Brasil, Campinas | Verfahren zur vormessung von hochstromparametern bei leistungstransistoren und hierzu geeigneter leistungstransistor |
DE3138340C2 (de) * | 1981-09-26 | 1987-01-29 | Telefunken electronic GmbH, 7100 Heilbronn | Verfahren zum Herstellen von mehreren planaren Bauelementen |
US5217907A (en) * | 1992-01-28 | 1993-06-08 | National Semiconductor Corporation | Array spreading resistance probe (ASRP) method for profile extraction from semiconductor chips of cellular construction |
US5451529A (en) * | 1994-07-05 | 1995-09-19 | Taiwan Semiconductor Manufacturing Company | Method of making a real time ion implantation metal silicide monitor |
US9093335B2 (en) * | 2012-11-29 | 2015-07-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Calculating carrier concentrations in semiconductor Fins using probed resistance |
DE102014211352B4 (de) * | 2014-06-13 | 2021-08-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Schichtsystem und Verfahren zur Bestimmung des spezifischen Widerstandes |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3335340A (en) * | 1964-02-24 | 1967-08-08 | Ibm | Combined transistor and testing structures and fabrication thereof |
-
1971
- 1971-01-26 US US109783A patent/US3676229A/en not_active Expired - Lifetime
- 1971-09-17 CA CA123159A patent/CA927523A/en not_active Expired
- 1971-12-28 FR FR7146943A patent/FR2123285B1/fr not_active Expired
-
1972
- 1972-01-14 AU AU37938/72A patent/AU463388B2/en not_active Expired
- 1972-01-15 DE DE2201833A patent/DE2201833C3/de not_active Expired
- 1972-01-17 YU YU115/72A patent/YU41806B/xx unknown
- 1972-01-20 GB GB286072A patent/GB1344395A/en not_active Expired
- 1972-01-24 BE BE778430A patent/BE778430A/fr unknown
- 1972-01-25 SE SE7200821A patent/SE381776B/xx unknown
- 1972-01-25 JP JP47009403A patent/JPS5145476B1/ja active Pending
- 1972-01-25 NL NL7200985A patent/NL7200985A/xx not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
DE2201833C3 (de) | 1978-06-29 |
DE2201833B2 (de) | 1977-11-10 |
FR2123285A1 (fr) | 1972-09-08 |
BE778430A (fr) | 1972-05-16 |
US3676229A (en) | 1972-07-11 |
GB1344395A (en) | 1974-01-23 |
DE2201833A1 (de) | 1972-08-24 |
AU463388B2 (en) | 1975-07-24 |
NL7200985A (fr) | 1972-07-28 |
AU3793872A (en) | 1973-07-19 |
SE381776B (sv) | 1975-12-15 |
CA927523A (en) | 1973-05-29 |
YU11572A (en) | 1984-02-29 |
FR2123285B1 (fr) | 1977-04-22 |
JPS5145476B1 (fr) | 1976-12-03 |
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