WO2023010676A1 - 一种柔性氮化镓光电探测器激光快速制备方法 - Google Patents
一种柔性氮化镓光电探测器激光快速制备方法 Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 78
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 62
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 70
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- 239000010409 thin film Substances 0.000 claims abstract description 19
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- 229910052594 sapphire Inorganic materials 0.000 description 18
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
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- Chinese invention patent application 201811189141.1 uses a tool lift-off mechanical transfer method to separate gallium nitride thin films from substrate materials to prepare flexible gallium nitride photodetectors. This method has a high product damage rate and limited process controllability and precision.
- Chinese invention patent application 202011106989.6 transfers the prepared gallium nitride functional device to a flexible substrate by pre-growing a sacrificial layer and then etching it with a chemical solution.
- the specific technical solution of the present invention is: a laser rapid preparation method for a flexible gallium nitride photodetector, comprising the following steps:
- Fig. 1 is the process flow chart of a kind of flexible gallium nitride photodetector laser rapid preparation method provided by the present invention
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Abstract
一种柔性氮化镓光电探测器激光快速制备方法，包括以下步骤：1)将柔性衬底（5）与氮化镓外延片贴合；2)调节光束焦平面位置，并保证光束从氮化镓外延片衬底一侧入射；3)使光束从步骤1)所得样品结构的边缘开始进行扫描辐照；4)调整工艺参数，沿步骤3)路径反方向扫描辐照；5)取下外延片原始刚性透明衬底（1），获得Ga金属纳米颗粒（3）/氮化镓薄膜/柔性衬底（5）结构；6)对步骤5)所得Ga金属纳米颗粒（3）表面制备叉指电极（4）；采用激光技术一步制备出具有Ga金属纳米颗粒（3）原位分布探测表面的柔性氮化镓光电探测器，在简化工艺的同时诱导探测器表面形成等离激元效应(SPR)，大幅增强了光吸收及光响应性能，适用工业生产。
Description
本发明属于光电探测器件制备领域，具体涉及一种柔性氮化镓光电探测器激光快速制备方法。
曝光是芯片制造光刻技术中最为关键的工艺环节，需要一定强度的紫外光透过掩膜对光刻胶进行选择性照射。而紫外曝光剂量会直接影响光刻胶显影图形的表面及边缘精度，最终影响芯片制造质量。采用紫外光电探测器可以有效地对光刻过程中的紫外曝光量进行监测，通过反馈调节从而提高光刻精度。目前广泛使用的非柔性紫外光电探测器主要是硅基紫外光电管和光电倍增管，体积笨重、易损坏。柔性氮化镓光电探测器作为新一代紫外光电探测器件，相比传统刚性基底探测器物化性质稳定，体积小巧，适用性广，更加适合芯片生产等高端复杂工业环境下的监测。中国发明专利申请201811189141.1采用刀具剥离机械转移的方式将氮化镓薄膜从衬底材料分离，用以制备柔性氮化镓光电探测器。该方法产品损伤率大，工艺可控性和精度均有限。中国发明专利申请202011106989.6采用预生长牺牲层再用化学溶液刻蚀的方式将制备好的氮化镓功能器件转移至柔性衬底。化学溶液刻蚀易造成环境污染，去除效率低、工艺复杂，不适用于批量化的生产。传统方法制作出的柔性光电探测器探测能力较弱，往往还需要进行纳米颗粒涂覆，借助等离激元增强效应来提高其探测性能。因此研发高性能氮化镓柔性光电探测器的快速制备新技术对提高半导体芯片制造过程中光刻精度乃至芯片生产质量具有重要意义。
发明内容
为了克服现有技术的不足，本发明的目的在于提供一种柔性氮化镓光电探测器激光快速制备方法。本发明采用激光技术在实现氮化镓薄膜向柔性衬底转移的同时，控制析出原位生长Ga金属纳米颗粒，一步制备出具有Ga金属纳米颗粒原位分布探测表面的柔性氮化镓光电探测器，在简化器件制备工 艺的同时，可大幅增强探测器的光吸收及光响应能力，适用于大规模批量化的工业生产。
本发明的具体技术方案为：一种柔性氮化镓光电探测器激光快速制备方法，包括以下步骤：
1)将柔性衬底与氮化镓薄膜外延片贴合，其中所述氮化镓外延片结构需为刚性透明衬底/氮化镓薄膜结构，贴合后得到刚性透明衬底/氮化镓薄膜/柔性衬底结构；
2)将样品放置在出光口下方固定高度的加工台面上，调节激光光束焦点位置，使其焦平面于步骤1)所述刚性透明衬底/氮化镓薄膜/柔性衬底结构中刚性透明衬底与氮化镓薄膜的交界面上下0.2mm的范围内，焦平面光斑尺寸l
0为5～100μm，并保证激光光束从刚性透明衬底一侧入射；
3)选择激光波长为250～1200nm，并选则脉宽小于等于10
-12s的超快激光。设置激光脉冲频率f
0为200kHz～1MHz。选用低单脉冲能量I
1为0.1～1μJ，低激光扫描速度v
1及小扫描间距d
1的工艺参数组合从步骤1)所得结构边缘开始扫描，且满足
及
采用低单脉冲能量、低激光扫描速度以及小扫描间距的工艺参数组合可以在确保氮化镓薄膜不发生分离或破损的情况下实现氮化镓薄膜与刚性透明衬底交界面之间Ga金属纳米颗粒的析出，同时减缓氮化镓分解产生的气体产物释放速度，降低气体产物对Ga金属纳米颗粒分布均匀性的影响；
4)激光脉宽、激光波长以及脉冲频率与步骤3)所述相同。选用高单脉冲能量I
2为1～2μJ，高激光扫描速度v
2以及大扫描间距d
2的工艺参数组合沿步骤3)中的扫描路径进行反方向的扫描，且满足
及
采用高单脉冲能量能够使氮化镓分解气体产物迅速释放，有利于破坏氮化镓薄膜与刚性透明衬底之间的微连接，实现氮化镓薄膜与刚性透明衬底的交界面分离。采用高扫描速度以及大扫描间距可以减小脉冲作用点之间的重叠率，降低相邻脉冲点间气体产物的相互耦合对步骤3)中已形成的Ga金属纳米颗粒分布的干扰。反向扫描可以进一步对步骤3)中析出的Ga金属纳米颗粒分布做均匀化补偿；
5)将激光扫描分离的刚性透明衬底取下，获得Ga金属纳米颗粒/氮化镓薄膜/柔性衬底结构；
6)在步骤5)所得结构中的Ga金属纳米颗粒表面制备叉指状电极，得到柔性氮化镓光电探测器。
进一步地，所述步骤3)中激光波长选择光子能量小于对应刚性透明衬底带隙的范围。
进一步地，所述步骤6)中叉指电极的材料为金属功函数高于氮化镓半导体亲和能的金属，和氮化镓薄膜形成肖特基接触。
与现有技术相比，本发明的有益效果在于：本发明提供了一种柔性氮化镓光电探测器激光快速制备方法。通过利用激光技术将刚性衬底上的氮化镓薄膜快速高质量地转移至柔性衬底，实现了柔性氮化镓光电探测器的快速制备。另外，通过对激光工艺的调控，使得探测器表面覆盖分布均匀的Ga金属纳米颗粒，进一步增强了该探测器的光吸收及光响应能力。该发明在简化柔性氮化镓光电探测器制备工艺的基础上，优化了器件性能，适用于大规模批量化的工业生产。
图1为本发明提供的一种柔性氮化镓光电探测器激光快速制备方法的工艺流程图；
图1(e)为本发明提供的柔性氮化镓光电探测器的截面示意图；
图2为本发明提供的柔性氮化镓光电探测器的俯视示意图；
其中，1、刚性透明衬底，2、氮化镓外延薄膜，3、Ga金属纳米颗粒，4、叉指电极，5、柔性衬底，6、超快激光光束。
为使本发明实施例的目的、技术方案和有点更加清楚，下面将结合实施例和附图，对本发明的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明的一个实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例1：
参见图1，本实施例提供的一种柔性氮化镓光电探测器激光快速制备方法包括如下步骤：
1)将thermal release tape柔性衬底与蓝宝石氮化镓薄膜外延片贴合，得到蓝宝石衬底/氮化镓薄膜/thermal release tape柔性衬底结构；
2)将步骤1)所述蓝宝石衬底/氮化镓薄膜/thermal release tape柔性衬底结构放置在出光口下方固定高度的加工台上，将激光光束焦平面设置在蓝宝石衬底与氮化镓薄膜的交界面上。由于所用氮化镓外延层厚度为4μm，thermal release tape柔性衬底厚度为500μm，因此将焦点位置设置为加工台上504μm处，并保证光束从蓝宝石衬底一侧入射，此时光斑大小为10μm；
3)由于蓝宝石衬底对短波长激光束透过率较高，因此选择355nm，脉宽为10皮秒(10
-12s)的激光束。光束能量形状分布为圆形光斑普通高斯光束，调节光束能量为0.5μJ，重复频率为250kHz，扫描速度为100mm/s，激光光束的扫描路径为线扫描填充，扫描间距为8μm，使其从步骤1)所述蓝宝石衬底/氮化镓薄膜/thermal release tape边缘开始扫描辐照，以此诱导氮化镓薄膜与蓝宝石衬底交界面析出原位生长的Ga金属纳米颗粒。
4)激光脉宽、激光波长、脉冲频率以及光斑大小与步骤3)所述相同，调节单脉冲能量为1.5μJ，扫描速度为3500mm/s，扫描间距为20μm。设置扫描路径起始点为步骤3)所述扫描路径的终点，沿步骤3)中所述路径进行反方向扫描。
5)扫描结束后，将蓝宝石衬底取下。此时得到氮化镓薄膜/thermal release tape柔性衬底结构，并且氮化镓薄膜表面覆盖有均匀分布的Ga金属纳米颗粒；
6)在步骤5)所得Ga金属纳米颗粒表面进行蒸镀Au叉指电极，电极厚度为80nm，使其与步骤5)所得结构形成肖特基接触，即制得表面Ga金属纳米颗粒平均尺寸为160nm的柔性氮化镓光电探测器，相比较直接在刚性衬底上蒸镀肖特基电极形成的氮化镓光电探测器，其对于280-400nm波段的光响应强度均有提高，350nm处出现响应峰值，提高了28倍。
实施例2：
参见图1，本实施例提供的一种柔性氮化镓光电探测器激光快速制备方法包括如下步骤：
1)将PET柔性衬底与蓝宝石氮化镓薄膜外延片贴合，得到蓝宝石衬底/氮化镓薄膜/PET柔性衬底结构；
2)将步骤1)所述蓝宝石衬底/氮化镓薄膜/PET柔性衬底结构放置在出光口下方固定高度的加工台上，将激光光束焦平面设置在蓝宝石衬底与氮化镓薄膜的交界面上。由于所用氮化镓外延层厚度为4μm，PET柔性衬底厚度为250μm，因此将焦点位置设置为加工台上254μm处，并保证光束从蓝宝石衬底一侧入射，此时光斑大小为10μm；
3)由于蓝宝石衬底对短波长激光束透过率较高，因此选择355nm，脉宽为10皮秒(10
-12s)的激光束。光束能量形状分布为圆形光斑平顶光束，调节光束能量为0.7μJ，重复频率为250kHz，扫描速度为80mm/s，激光光束的扫描路径为线扫描填充，扫描间距为5μm，使其从步骤1)所述蓝宝石衬底/氮化镓薄膜/PET边缘开始扫描辐照，以此诱导氮化镓薄膜与蓝宝石衬底交界面析出原位生长的Ga金属纳米颗粒。
4)激光脉宽、激光波长、脉冲频率以及光斑大小与步骤3)所述相同，调节单脉冲能量为1.8μJ，扫描速度为3000mm/s，扫描间距为15μm。设置扫描路径起始点为步骤3)所述扫描路径的终点，沿步骤3)中所述路径进行反方向扫描。
5)扫描结束后，将蓝宝石衬底取下。此时得到氮化镓薄膜/PET柔性衬底结构，并且氮化镓薄膜表面覆盖有均匀分布的Ga金属纳米颗粒；
6)在步骤5)所得Ga金属纳米颗粒表面进行蒸镀Au叉指电极，电极厚度为80nm，使其与步骤5)所得结构形成肖特基接触，即制得表面Ga金属纳米颗粒平均尺寸为80nm的柔性氮化镓光电探测器，相比较直接在刚性衬底上蒸镀肖特基电极形成的氮化镓光电探测器，其对于280-400nm波段的光响应强度均有提高，330nm处出现响应峰值，提高了35倍。
以上实施例1及实施例2仅是示例性，其中刚性透明衬底的选择，柔性衬底的选择以及激光光束各种参数的设定仅作为举例，不是对本发明的方法 的限定。例如：柔性衬底还可选择PI或PDMS，刚性透明衬底还可选择SiC，叉指电极材料还可选择Pt。
最后应说明的是：本领域的技术人员，在不脱离本发明的精神和范围内，对本发明的技术方案进行的修改或改进，均属于本发明的保护范围。
Claims (3)
- 一种柔性氮化镓光电探测器激光快速制备方法，其特征在于，包括如下步骤：1)将柔性衬底与氮化镓薄膜外延片贴合，其中所述氮化镓外延片结构需为刚性透明衬底/氮化镓薄膜结构，贴合后得到刚性透明衬底/氮化镓薄膜/柔性衬底结构；2)将样品放置在出光口下方固定高度的加工台面上，调节激光光束焦点位置，使其焦平面于步骤1)所述刚性透明衬底/氮化镓薄膜/柔性衬底结构中刚性透明衬底与氮化镓薄膜的交界面上下0.2mm的范围内，焦平面光斑尺寸l 0为5～100μm，并保证激光光束从刚性透明衬底一侧入射；3)选择激光波长为250～1200nm，并选则脉宽小于等于10 -12s的超快激光。设置激光脉冲频率f 0为200kHz～1MHz。选用低单脉冲能量I 1为0.1～1μJ，低激光扫描速度v 1及小扫描间距d 1的工艺参数组合从步骤1)所得结构边缘开始扫描，且满足及
辐照析出Ga金属纳米颗粒；
4)激光脉宽、激光波长以及脉冲频率与步骤3)所述相同。选用高单脉冲能量I 2为1～2μJ，高激光扫描速度v 2以及大扫描间距d 2的工艺参数组合沿步骤3)中的扫描路径进行反方向的扫描，且满足及
对氮化镓薄膜与刚性透明衬底的交界面进行分离；
5)将激光扫描分离的刚性透明衬底取下，获得Ga金属纳米颗粒/氮化镓薄膜/柔性衬底结构；6)在步骤5)所得结构中的Ga金属纳米颗粒表面制备叉指状电极，得到柔性氮化镓光电探测器。 - 根据权利要求1所述一种柔性氮化镓光电探测器激光快速制备方法，其特征在于：所述步骤3)中激光波长选择光子能量小于对应刚性透明衬底带隙的范围。
- 根据权利要求1所述一种柔性氮化镓光电探测器激光快速制备方法，其特征在于：所述步骤6)中叉指电极的材料为金属功函数高于氮化镓半导体亲 和能的金属，和氮化镓薄膜形成肖特基接触。
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