WO2022210088A1 - Appareil de traitement de substrat et procédé de traitement de substrat - Google Patents

Appareil de traitement de substrat et procédé de traitement de substrat Download PDF

Info

Publication number
WO2022210088A1
WO2022210088A1 PCT/JP2022/013136 JP2022013136W WO2022210088A1 WO 2022210088 A1 WO2022210088 A1 WO 2022210088A1 JP 2022013136 W JP2022013136 W JP 2022013136W WO 2022210088 A1 WO2022210088 A1 WO 2022210088A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
liquid
main surface
vibrator
vibration
Prior art date
Application number
PCT/JP2022/013136
Other languages
English (en)
Japanese (ja)
Inventor
幸吉 広城
光則 中森
洋介 川渕
Original Assignee
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Priority to KR1020237032188A priority Critical patent/KR20230163391A/ko
Priority to CN202280023841.7A priority patent/CN117063266A/zh
Priority to JP2023511011A priority patent/JPWO2022210088A1/ja
Publication of WO2022210088A1 publication Critical patent/WO2022210088A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/048—Overflow-type cleaning, e.g. tanks in which the liquid flows over the tank in which the articles are placed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • B08B3/14—Removing waste, e.g. labels, from cleaning liquid; Regenerating cleaning liquids
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B21/00—Arrangements or duct systems, e.g. in combination with pallet boxes, for supplying and controlling air or gases for drying solid materials or objects
    • F26B21/004—Nozzle assemblies; Air knives; Air distributors; Blow boxes
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F26—DRYING
    • F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
    • F26B5/00—Drying solid materials or objects by processes not involving the application of heat
    • F26B5/02—Drying solid materials or objects by processes not involving the application of heat by using ultrasonic vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces

Definitions

  • the present disclosure relates to a substrate processing apparatus and a substrate processing method.
  • a substrate processing apparatus described in Patent Document 1 includes a spin chuck that horizontally holds and rotates a substrate, and a first processing liquid (HFE (hydrofluoroether)) and a second processing liquid (HFE (hydrofluoroether)) on the upper surface of the substrate held by the spin chuck.
  • a first processing liquid supply nozzle and a second processing liquid supply nozzle are provided for supplying a liquid (gas-dissolved water), respectively.
  • HFE and gas-dissolved water are supplied to the upper surface of the substrate held by the spin chuck, forming a liquid film of HFE on the upper surface of the substrate, and further forming a liquid film of gas-dissolved water thereon. In this state, ultrasonic vibration is applied to the liquid film of gas-dissolved water and HFE.
  • One aspect of the present disclosure provides a technique for improving the quality of the uneven pattern of the substrate.
  • a substrate processing method is a substrate having a first main surface and a second main surface facing opposite to each other and including an uneven pattern on the first main surface. It involves applying vibrations by means of a vibrator while the whole is exposed.
  • FIG. 1A is a diagram showing a reference example of drying the substrate
  • FIG. 1B is a diagram showing an example of processing after drying the substrate
  • FIG. FIG. 4 is a diagram showing an example
  • FIG. 2 is a diagram showing an example of a single substrate processing apparatus.
  • FIG. 3 is a flow chart showing an example of a single substrate processing method.
  • FIG. 4 is a diagram showing an example of step S105.
  • FIG. 5 is a diagram showing another example of step S105.
  • FIG. 6 is a diagram showing an example of a batch-type substrate processing apparatus, showing an example of a state in which a substrate is immersed in a processing liquid stored inside a processing tank.
  • FIG. 1A is a diagram showing a reference example of drying the substrate
  • FIG. 1B is a diagram showing an example of processing after drying the substrate
  • FIG. FIG. 4 is a diagram showing an example
  • FIG. 2 is a diagram showing an example of a single substrate processing apparatus.
  • FIG. 3 is a
  • FIG. 7 is a diagram showing an example of a batch-type substrate processing apparatus, showing an example of a state in which substrates are arranged inside a drying tank.
  • FIG. 8 is a diagram showing an example of a state in which the substrate immersed in the processing liquid is being pulled up from the processing liquid.
  • FIG. 9 is a diagram showing an example of a vibrator attached to a substrate holder. 10 is a cross-sectional view taken along line XX of FIG. 9.
  • FIG. FIG. 11 is a cross-sectional view showing an example of the uneven pattern of the substrate.
  • the processing liquid L may be supplied to the substrate W, and then the substrate W may be dried.
  • the substrate W has a first principal surface Wa and a second principal surface Wb facing opposite to each other, and includes an uneven pattern on the first principal surface Wa.
  • the treatment liquid L is supplied to the first main surface Wa.
  • the protrusions In the process of drying the substrate W, an interface between gas and liquid appears on the first main surface Wa of the substrate W, and surface tension acts on the first main surface Wa.
  • the protrusions When the first main surface Wa includes an uneven pattern, the protrusions may be inclined due to variations in surface tension or the like, and the tips of adjacent protrusions may adhere to each other.
  • the inventor observed the first main surface Wa of the substrate W with a SEM (scanning electron microscope) or the like, the inventor formed a position mark on the first main surface Wa with a marking needle. As a result of SEM observation, the inventor found that the ratio of inclined convex portions is lower in the vicinity of the position mark than in the region away from the position mark.
  • the present inventor formed a position mark with a marking needle in a region with a high ratio of inclined convex portions, and then observed the region again. was found to be lower. This suggests that the adhering tips of the adjacent projections were peeled off by the impact of the marking, and the projections stood upright.
  • the present inventor conducted an experiment based on the above findings, and after drying the substrate W, if the substrate W was vibrated with a vibrator, as shown in FIG. It was found that the tips that were formed can be peeled off from each other.
  • the present inventor conducted an experiment based on the above knowledge and found that if the substrate W is vibrated by a vibrator in the process of drying the substrate W as shown in FIG. It was found that the adhesion between the tips can be suppressed.
  • the vibration of the substrate W can equalize the thickness of the processing liquid L and reduce variations in surface tension.
  • the vibration of the substrate W can suppress the creeping of the treatment liquid L along the protrusions, and the formation of the droplets of the treatment liquid L extending over the tips of the adjacent protrusions can be suppressed. This is because it is possible to suppress adhesion between the tips of the projections.
  • the uneven pattern of the substrate W may be a pattern including a plurality of pillars as shown in FIG. 1, a pattern including a plurality of holes, a line-and-space pattern, or the like shown in FIG. It may be a circuit pattern of a 3D NAND memory such as In any uneven pattern, the quality of the uneven pattern can be improved by vibrating the substrate W with a vibrator.
  • the substrate W shown in FIG. 11 includes a silicon wafer W1, a silicon nitride film W2, and a silicon oxide film W3.
  • the silicon nitride film W2 and the silicon oxide film W3 are alternately laminated on the silicon wafer W1 to form a laminate W4.
  • the substrate W includes a pillar W5 penetrating the laminate W4 in the lamination direction, and an opening W6 penetrating the laminate W4 in the lamination direction.
  • the silicon nitride film W2 is etched by supplying a chemical such as a phosphoric acid solution to the opening W6.
  • the substrate processing apparatus 10 supplies a processing liquid to the substrate W, and then dries the substrate W.
  • the substrate processing apparatus 10 includes, for example, a substrate holding unit 11, a rotation driving unit 12, a first liquid supply unit 20, a second liquid supply unit 30, a gas supply unit 40, and a control unit. a portion 17; Note that the second liquid supply unit 30 and the gas supply unit 40 have arbitrary configurations and may be omitted.
  • the substrate holding part 11 horizontally holds the substrate W with the first main surface Wa of the substrate W facing upward.
  • the substrate W includes, for example, a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer, or a glass substrate.
  • a conductive film, an insulating film, or the like is formed on a surface of a semiconductor substrate, a glass substrate, or the like. Multiple membranes may be formed.
  • the substrate W includes a device such as an electronic circuit on its first main surface Wa, and includes an uneven pattern (not shown).
  • the substrate holding portion 11 has, for example, a disc-shaped plate portion 111 and claw portions 112 arranged on the outer peripheral portion of the plate portion 111 .
  • a plurality of claw portions 112 are arranged at intervals in the circumferential direction, and hold the substrate W so as to be lifted from the plate portion 111 by holding the peripheral edge of the substrate W.
  • a gap is formed between the substrate W and the plate portion 111 .
  • the substrate holding part 11 has a rotating shaft part 113 extending downward from the center of the plate part 111 .
  • Rotating shaft portion 113 is rotatably supported by bearing 114 .
  • a through hole 115 is formed to vertically pass through the plate portion 111 and the rotating shaft portion 113 .
  • a fixed shaft portion 116 is provided in the through hole 115 .
  • the rotation driving section 12 rotates the substrate holding section 11 .
  • the rotation driving section 12 rotates the substrate holding section 11 around a vertically arranged rotating shaft section 113 to rotate the substrate W together with the substrate holding section 11 .
  • the rotary drive section 12 has, for example, a rotary motor 121 and a transmission mechanism 122 that transmits the rotary motion of the rotary motor 121 to the rotary shaft section 113 .
  • the transmission mechanism 122 includes, for example, pulleys and timing belts. Note that the transmission mechanism 122 may include a plurality of gears instead of the pulleys and timing belts.
  • the first liquid supply unit 20 supplies the processing liquid from above to the substrate W held by the substrate holding unit 11 .
  • the first liquid supply unit 20 may supply a plurality of types of processing liquids, and may supply processing liquids according to the processing stage of the substrate W.
  • the processing liquid supplied by the first liquid supply unit 20 is, for example, a chemical liquid, a rinse liquid, a drying liquid, and the like.
  • Chemical solutions are DHF (dilute hydrofluoric acid), SC-1 (aqueous solution containing ammonium hydroxide and hydrogen peroxide), SC-2 (aqueous solution containing hydrogen chloride and hydrogen peroxide), or SPM (sulfuric acid and hydrogen peroxide).
  • Aqueous solution containing Multiple types of chemical solutions may be used.
  • the rinse liquid is pure water such as DIW (deionized water).
  • the dry liquid is an organic solvent such as IPA (isopropyl alcohol).
  • the first liquid supply section 20 has a first nozzle 21 for ejecting the processing liquid.
  • the first nozzle 21 may be provided for each treatment liquid, and the plurality of first nozzles 21 may eject different treatment liquids. Alternatively, one first nozzle 21 may sequentially eject a plurality of treatment liquids.
  • a supply line 22 for supplying the processing liquid to the first nozzle 21 is connected to the first nozzle 21 .
  • a supply line 22 is provided for each processing liquid.
  • An on-off valve 23 , a flow controller 24 and a flow meter 25 are provided in the middle of the supply line 22 .
  • the first liquid supply unit 20 supplies the processing liquid, for example, to the center of the first main surface Wa of the substrate W during rotation.
  • the supplied treatment liquid spreads over the entire first main surface Wa by centrifugal force, and is shaken off from the peripheral edge of the substrate W. As shown in FIG.
  • the droplets of the treatment liquid shaken off are collected in the cup 13 .
  • a drain pipe 14 and an exhaust pipe 15 are provided at the bottom of the cup 13 .
  • the drain pipe 14 discharges the liquid in the cup 13 and the exhaust pipe 15 discharges the gas in the cup 13 .
  • the first liquid supply unit 20 has a first moving mechanism 26 that moves the first nozzle 21 in the radial direction of the substrate W.
  • the first moving mechanism 26 has, for example, a turning arm 261 and a turning mechanism 262 that turns the turning arm 261 .
  • the swivel arm 261 is horizontally arranged and holds the first nozzle 21 at its tip.
  • the turning mechanism 262 turns the turning arm 261 around a turning shaft 263 extending downward from the base end of the turning arm 261 .
  • the first moving mechanism 26 may have an elevating mechanism 264 that elevates the swing arm 261 .
  • the first moving mechanism 26 may have a guide rail and a direct-acting mechanism that moves the first nozzle 21 along the guide rail instead of the turning arm 261 and turning mechanism 262 .
  • the second liquid supply section 30 supplies liquid from below to the substrate W held by the substrate holding section 11 . Although the details will be described later, the second liquid supply unit 30 supplies the liquid to the second main surface Wb of the substrate W after applying vibration to the liquid using a vibrator.
  • the liquid for example, pure water such as DIW is used.
  • the second liquid supply section 30 has a second nozzle 31 for discharging liquid.
  • a supply line 32 that supplies liquid to the second nozzle 31 is connected to the second nozzle 31 .
  • the supply line 32 is provided so as to pass through the fixed shaft portion 116 .
  • An on-off valve 33 , a flow controller 34 , and a flow meter 35 are provided in the middle of the supply line 32 .
  • the second nozzle 31 only needs to eject fluid, and instead of liquid, gas may be ejected, or mixed fluid of liquid and gas may be ejected. Any fluid may be used as long as it can be vibrated by the vibrator.
  • the second liquid supply unit 30 has a second moving mechanism 36 that moves the second nozzle 31 in the radial direction of the substrate W.
  • the second moving mechanism 36 has, for example, a horizontally arranged guide rail 361 and a linear motion mechanism that moves the second nozzle 31 along the guide rail 361 .
  • the guide rail 361 is fixed to the fixed shaft portion 116 .
  • the linear motion mechanism includes, for example, a rotary motor and a ball screw that converts rotary motion of the rotary motor into linear motion of the second nozzle heating section. Note that the structure of the second moving mechanism 36 is not particularly limited.
  • the gas supply unit 40 supplies gas from above to the substrate W held by the substrate holding unit 11 .
  • the supplied gas will be described later in detail, but as shown in FIG. 4 or FIG. Press the boundary line A3 of A2.
  • the boundary line A3 can be moved outward in the radial direction of the substrate W at a constant speed.
  • the gas supply unit 40 has a third nozzle 41 for discharging gas, as shown in FIG.
  • the gas is, for example, nitrogen gas or dry air.
  • a supply line 42 for supplying gas to the third nozzle 41 is connected to the third nozzle 41 .
  • An on-off valve 43 , a flow controller 44 , and a flow meter 45 are provided in the middle of the supply line 42 .
  • the gas supply unit 40 has a third moving mechanism 46 that moves the third nozzle 41 in the radial direction of the substrate W.
  • the third moving mechanism 46 has, for example, a turning arm 461 and a turning mechanism 462 that turns the turning arm 461 .
  • the swivel arm 461 is horizontally arranged and holds the third nozzle 41 at its tip.
  • the turning mechanism 462 turns the turning arm 461 around a turning shaft 463 extending downward from the base end of the turning arm 461 .
  • the third moving mechanism 46 may have an elevating mechanism 464 that elevates the turning arm 461 .
  • the third moving mechanism 46 may have a guide rail and a direct-acting mechanism that moves the third nozzle 41 along the guide rail instead of the turning arm 461 and turning mechanism 462 .
  • the first moving mechanism 26 and the third moving mechanism 46 are separately provided in order to move the first nozzle 21 and the third nozzle 41 independently.
  • the first nozzle 21 and the third nozzle 41 may be moved by one moving mechanism.
  • the control unit 17 is, for example, a computer, and includes a CPU (Central Processing Unit) 18 and a storage medium 19 such as a memory.
  • the storage medium 19 stores programs for controlling various processes executed in the substrate processing apparatus 10 .
  • the control unit 17 controls the operation of the substrate processing apparatus 10 by causing the CPU 18 to execute programs stored in the storage medium 19 .
  • a transport device loads the substrate W into the substrate processing apparatus 10 (step S101). After placing the substrate W on the substrate holding unit 11 , the transport device exits from the interior of the substrate processing apparatus 10 .
  • the substrate holding part 11 receives the substrate W from the transport device and horizontally holds the substrate W with the first main surface Wa of the substrate W facing upward. After that, the rotation driving section 12 rotates the substrate W together with the substrate holding section 11 .
  • the first liquid supply unit 20 supplies the chemical liquid to the center of the first main surface Wa of the substrate W being rotated (step S102).
  • the chemical liquid spreads over the entire first main surface Wa of the substrate W by centrifugal force, forming a liquid film on the substrate W. As shown in FIG.
  • the first liquid supply unit 20 supplies the rinse liquid to the center of the first main surface Wa of the substrate W being rotated (step S103).
  • the rinsing liquid spreads over the entire first main surface Wa of the substrate W due to centrifugal force, and the chemical liquid remaining on the substrate W is washed away. As a result, a liquid film of the rinse liquid is formed on the substrate W. As shown in FIG.
  • the first liquid supply unit 20 supplies the drying liquid to the center of the first main surface Wa of the substrate W being rotated (step S104).
  • the drying liquid spreads over the entire first main surface Wa of the substrate W due to centrifugal force, and the rinse liquid remaining on the substrate W is washed away. As a result, a liquid film of the drying liquid is formed on the substrate W. As shown in FIG.
  • step S105 the rotation drive unit 12 continues to rotate the substrate W, shakes off the drying liquid remaining on the substrate W, and dries the substrate W. Details of step S105 will be described later. After drying the substrate W, the rotation driving unit 12 stops rotating the substrate W. As shown in FIG.
  • a transport device enters the interior of the substrate processing apparatus 10, receives the substrate W from the substrate holding unit 11, and carries the received substrate W out of the substrate processing apparatus 10 (step S106).
  • the substrate holding part 11 releases the holding of the substrate W before transferring the substrate W to the transfer device.
  • step S104 the supply of dry liquid (step S104) may not be performed.
  • the substrate W is dried (step S105), and the rinse liquid remaining on the substrate W is shaken off by centrifugal force.
  • the organic solvent that is the drying liquid has a smaller surface tension than the pure water that is the rinsing liquid. Therefore, from the viewpoint of improving the quality of the uneven pattern, it is preferable to supply the drying liquid (step S104).
  • step S105 on the first main surface Wa of the substrate W, a first area A1 covered with the treatment liquid L (for example, a drying liquid), a second area A2 exposed from the treatment liquid L, A boundary line A3 is formed between the first area A1 and the second area A2.
  • the boundary line A3 is moved in the direction in which the second area A2 expands, and the substrate W is dried.
  • step S105 for example, the substrate holding unit 11 horizontally holds the substrate W, and the rotation driving unit 12 rotates the substrate W to move the position of the boundary line A3 radially outward of the substrate W by centrifugal force.
  • the second area A2 is first formed in the center of the first main surface Wa of the substrate W, and then gradually expands outward in the radial direction of the substrate W.
  • the boundary line A3 widens gradually outward in the radial direction of the substrate W in a concentric shape.
  • the rotation drive section 12 corresponds to the moving section described in the claims.
  • the first moving mechanism 26 may move the first nozzle 21 radially outward of the substrate W when moving the boundary line A3.
  • the processing liquid L can be supplied to the outside of the boundary line A3 while moving the boundary line A3 outward in the radial direction of the substrate W, and the peripheral edge of the substrate W is naturally dried before the boundary line A3 reaches the peripheral edge of the substrate W. You can prevent it from happening.
  • the third moving mechanism 46 may move the third nozzle 41 radially outward of the substrate W when moving the boundary line A3.
  • the third nozzle 41 supplies gas toward the boundary line A3 or radially inward of the boundary line A3, and presses the boundary line A3 with the pressure of the gas.
  • the third moving mechanism 46 moves the third nozzle 41 so as to interlock with the first nozzle 21 .
  • vibration is applied to the substrate W when moving the boundary line A3.
  • the vibration of the substrate W can not only separate the tips of the adhering protrusions, but also suppress the adhesion of the tips of the protrusions themselves.
  • the substrate processing apparatus 10 includes vibrators 16A to 16D that apply vibrations to the substrate W held by the substrate holding part 11.
  • the substrate processing apparatus 10 may include at least one of vibrators 16A to 16D.
  • the vibrators 16A-16D include piezoelectric elements, for example.
  • the material of the piezoelectric element is, for example, lead zirconate titanate (PZT).
  • the vibrators 16A-16D are connected to oscillators.
  • the oscillator vibrates the vibrators 16A-16D at a predetermined frequency.
  • the oscillator applies, for example, an alternating voltage to the vibrators 16A-16D.
  • An oscillator may be provided for each transducer 16A-16D to individually vibrate the transducers 16A-16D.
  • the oscillation frequencies of the vibrators 16A to 16D are not particularly limited, but are determined by the pitch of the protrusions of the uneven pattern of the substrate W or the like. The higher the oscillation frequency, the shorter the wavelength of vibration.
  • the oscillation frequency is preferably set such that the vibration wavelength is twice or less than the pitch of the projections.
  • the oscillation frequency is, for example, 1 MHz or higher. From the viewpoint of suppressing damage to the PZT, the oscillation frequency is preferably 50 MHz or less, more preferably 10 MHz or less.
  • harmonics may be used, or an AC voltage other than the natural frequency may be applied to the vibrators 16A-16D.
  • the vibration may not be a sine wave, but may be a square wave or a pulse wave. Note that the vibration may be random vibration.
  • the first area A1 has a first sub-area A11 in which the thickness of the treatment liquid L is constant, and a second sub-area A12 in which the thickness of the treatment liquid L decreases from the first sub-area A11 to the boundary line A3. . It is the second sub-region A12 that the surface tension acts on the uneven pattern. Therefore, by intensively vibrating the second sub-region A12, the quality of the uneven pattern can be efficiently improved.
  • the vibrator 16A is attached to the first nozzle 21 and applies vibration to the substrate W by applying vibration to the processing liquid L.
  • the first nozzle 21 supplies the treatment liquid L to the vicinity of the second sub-region A12. Therefore, by vibrating the treatment liquid L, the second sub-region A12 can be vibrated intensively, and the quality of the uneven pattern can be efficiently improved.
  • the supply position of the processing liquid L to which vibration is applied by the vibrator 16A may be moved radially outward of the substrate W. While moving the position of the boundary line A3, the second sub-region A12 can be kept vibrating intensively.
  • the supply position of the treatment liquid L is set in front of the boundary line A3 in the movement direction, and is moved at a constant distance from the boundary line A3.
  • the vibrator 16A has, for example, an irradiation surface facing the ejection port of the first nozzle 21 for ejecting the processing liquid L, and irradiates ultrasonic waves from the irradiation surface toward the ejection port to vibrate the processing liquid L.
  • the vibrator 16A applies vibration to the treatment liquid L inside the first nozzle 21 . Therefore, the material of the first nozzle 21 is preferably metal, glass, amorphous carbon, or ceramic instead of resin that absorbs vibration. Ceramics are, for example, quartz or silicon carbide.
  • the treatment liquid L may be degassed liquid.
  • a degassed liquid is a liquid whose dissolved gas concentration has been reduced by degassing. By using the degassed liquid, it is possible to suppress the occurrence of cavitation and reduce the impact caused when the cavitation is crushed. Therefore, it is possible to suppress the breakage of the convex portion and the generation of particles.
  • the oscillation frequency of the vibrator 16A is preferably 2 MHz or more. If the oscillation frequency is 2 MHz or more, the occurrence of cavitation can be suppressed.
  • the vibrator 16A applies vibration to the processing liquid L, as shown in FIG. 5, the ejection direction of the processing liquid L is inclined radially outward of the substrate W as it approaches the first main surface Wa of the substrate W. You may have When the concave-convex pattern includes a plurality of pillars, the tips of the convex portions can be efficiently vibrated in the lateral direction.
  • the inclination angle of the ejection direction of the treatment liquid L is, for example, greater than 0° and equal to or less than 60°.
  • the inclination angle of the ejection direction of the treatment liquid L is 90°.
  • the oscillator 16B is attached to the second nozzle 31 and applies vibration to the substrate W by applying vibration to the liquid L2.
  • the second nozzle 31 supplies the liquid L2 directly below the second sub-region A12. Therefore, by vibrating the liquid L2, the second sub-region A12 can be vibrated intensively, and the quality of the uneven pattern can be efficiently improved.
  • the supply position of the liquid L2 to which vibration is applied by the vibrator 16B may be moved radially outward of the substrate W. While moving the position of the boundary line A3, the second sub-region A12 can be kept vibrating intensively. The supply position of the liquid L2 is set directly below the second sub-region A12.
  • the vibrator 16B has, for example, an irradiation surface that directly faces the ejection port of the second nozzle 31 that ejects the liquid L2, and emits ultrasonic waves from the irradiation surface toward the ejection port to vibrate the liquid L2.
  • the vibrator 16B applies vibration to the liquid L2 inside the second nozzle 31 .
  • the material of the second nozzle 31 is preferably metal, glass, amorphous carbon, or ceramic instead of resin that absorbs vibration. Ceramics are, for example, quartz or silicon carbide.
  • the discharge direction of the liquid L2 is inclined outward in the radial direction of the substrate W as it approaches the second main surface Wb of the substrate W, as shown in FIG. may
  • the concave-convex pattern includes a plurality of pillars, the tips of the convex portions can be efficiently vibrated in the lateral direction.
  • the inclination angle ⁇ of the discharge direction of the liquid L2 is, for example, greater than 0° and equal to or less than 60°.
  • the inclination angle ⁇ of the ejection direction of the liquid L2 is 90°.
  • the vibrator 16C is attached to the third nozzle 41 and applies vibration to the substrate W by applying vibration to the gas G.
  • the third nozzle 41 supplies gas G to the vicinity of the second sub-region A12. Therefore, by vibrating the gas G, the second sub-region A12 can be vibrated intensively, and the quality of the uneven pattern can be efficiently improved.
  • the supply position of the gas G to which vibration is applied by the vibrator 16C may be moved radially outward of the substrate W. While moving the position of the boundary line A3, the second sub-region A12 can be kept vibrating intensively.
  • the supply position of the gas G is set behind the boundary line A3 in the moving direction, and is moved at a constant distance from the boundary line A3. In addition, although the supply position of the gas G may be moved, it may be stopped.
  • the vibrator 16C has, for example, an irradiation surface directly facing the discharge port of the third nozzle 41 for discharging the gas G, and emits ultrasonic waves from the irradiation surface toward the discharge port to vibrate the gas G.
  • the vibrator 16 ⁇ /b>C applies vibration to the gas G inside the third nozzle 41 . Therefore, the material of the third nozzle 41 is preferably metal, glass, amorphous carbon, or ceramic instead of resin that absorbs vibration. Ceramics are, for example, quartz or silicon carbide.
  • the discharge direction of the gas G is inclined outward in the radial direction of the substrate W as it approaches the first main surface Wa of the substrate W.
  • the concave-convex pattern includes a plurality of pillars, the tips of the convex portions can be efficiently vibrated in the lateral direction.
  • the inclination angle of the discharge direction of the gas G is, for example, greater than 0° and equal to or less than 60°.
  • the inclination angle of the ejection direction of the gas G is 90°.
  • the vibrator 16D is attached to the substrate holding portion 11 and applies vibration to the substrate W by applying vibration to the substrate holding portion 11 .
  • the material of the substrate holding portion 11 is preferably metal, glass, amorphous carbon, or ceramic instead of resin that absorbs vibration. Ceramics are, for example, quartz or silicon carbide.
  • the vibrator 16D is attached to the claw portion 112 of the substrate holding portion 11, for example, and applies vibration to the substrate W by applying vibration to the claw portion 112. Further, the vibrator 16D may come into contact with the peripheral edge of the substrate W, or may apply vibration to the substrate W directly. Damping of vibration can be suppressed.
  • vibration is applied to the substrate W when the boundary line A3 is moved. Vibration may be applied to the substrate W. In the latter case, at least one of vibrators 16B-16D is used to prevent the first main surface Wa of substrate W from getting wet again.
  • the substrate W may be rotated when the liquid L2 vibrated by the vibrator 16B is supplied to the substrate W. Vibration can be applied over the entire circumference of the substrate W. FIG. Further, when the liquid L2 vibrated by the vibrator 16B is supplied to the substrate W, the second nozzle 31 for ejecting the liquid L2 may be moved in the radial direction of the substrate W. Vibration can be applied to the entire substrate W in the radial direction.
  • the substrate W may be rotated when the gas G vibrated by the oscillator 16C is supplied to the substrate W. Vibration can be applied over the entire circumference of the substrate W.
  • FIG. when supplying the substrate W with the gas G vibrated by the oscillator 16 ⁇ /b>C, the third nozzle 41 for discharging the gas G may be moved in the radial direction of the substrate W. Vibration can be applied to the entire substrate W in the radial direction.
  • FIG. 6 and 7 The substrate processing apparatus 50 supplies the processing liquid L to the substrate W, and then dries the substrate W.
  • the substrate processing apparatus 50 includes a processing container 60 , a substrate holding section 70 , a gas supply section 80 , a gas discharge section 86 and a control section 57 .
  • the processing container 60 has a processing tank 61 that stores the processing liquid L in which the substrate W is immersed.
  • the treatment liquid L is, for example, pure water such as DIW.
  • the processing tank 61 has, for example, an inner tank 611 for storing the processing liquid L, an outer tank 612 for collecting the processing liquid overflowing from the inner tank 611 , and a seal tank 613 surrounding the upper end of the outer tank 612 .
  • a nozzle 51 for supplying the processing liquid L into the inner bath 611 is provided inside the inner bath 611 .
  • the bottom wall of the inner tank 611 is provided with a discharge port 52 for discharging the processing liquid L stored inside the inner tank 611 .
  • the processing container 60 has a drying bath 62 for drying the substrates W.
  • the drying bath 62 is arranged above the processing bath 61 .
  • the drying tank 62 includes, for example, a tubular side wall 621 .
  • the cylindrical side wall 621 is open upward and has a loading/unloading port 622 for the substrate W at its upper end.
  • the drying tank 62 further has a lid 623 that opens and closes the loading/unloading port 622 .
  • the lid body 623 has a dome shape that protrudes upward and is moved up and down by the opening/closing mechanism 53 .
  • the processing container 60 has a casing 63 between the processing bath 61 and the drying bath 62 .
  • a shutter 64 is movably arranged inside the casing 63 . The shutter 64 is moved between a communicating position where the processing bath 61 and the drying bath 62 are communicated as shown in FIG. 6 and a blocking position where the processing bath 61 and the drying bath 62 are blocked as shown in FIG.
  • the substrate processing apparatus 50 further includes an opening/closing mechanism 54 that moves the shutter 64 between the communicating position and the blocking position.
  • the opening/closing mechanism 54 moves the shutter 64 horizontally.
  • the opening/closing mechanism 54 may also move the shutter 64 in the vertical direction.
  • the shutter 64 is horizontally arranged and holds a frame-shaped seal 65 on its upper surface.
  • the substrate holding unit 70 vertically holds each of a plurality of substrates W arranged at intervals in the horizontal direction.
  • the substrate holder 70 has, for example, a plurality of (eg, four) arms 71A to 71D extending in the horizontal direction.
  • the multiple arms 71A to 71D each include grooves 711 at equal pitches in the X-axis direction.
  • a peripheral edge of the substrate W is inserted into the groove 711 .
  • a plurality of arms 71A to 71D hold the periphery of each substrate W at a plurality of points.
  • the substrate holding part 70 has a vertical back plate 72 that cantilevers a plurality of arms 71A to 71D, and an elevating rod 73 (see FIGS. 6 and 7) extending directly upward from the back plate 72.
  • the lifting rod 73 is inserted through a through hole of the lid 623, and the through hole is provided with a sealing mechanism.
  • a lifting mechanism 55 is connected to the upper end of the lifting rod 73 .
  • the elevating mechanism 55 elevates the substrate holder 70 .
  • the gas supply unit 80 supplies gas to the interior of the processing container 60 .
  • the supplied gas is, for example, an inert gas G1 or a mixed gas of the inert gas G1 and organic solvent vapor G2.
  • An organic solvent is, for example, IPA.
  • the supplied gas may be preheated. Drying of the substrate W can be accelerated.
  • the gas supply unit 80 includes a nozzle 81, for example.
  • a plurality of nozzles 81 may be provided inside the processing container 60 .
  • a supply line 82 is connected to each nozzle 81 .
  • the supply line 82 has, for example, a common line 821 and a plurality of individual lines 822-823.
  • the common line 821 connects the confluence of the individual lines 822 to 823 and the nozzle 81 .
  • a heater 83 for heating the supplied gas may be provided in the middle of the common line 821 .
  • the individual line 822 supplies the inert gas G1 to the nozzle 81.
  • the individual line 823 supplies the organic solvent vapor G2 to the nozzle 81 .
  • An on-off valve 84 and a flow rate controller 85 are provided in the middle of each of the individual lines 822 and 823 .
  • the gas discharge unit 86 discharges gas from the inside of the processing container 60 to the outside.
  • the gas discharge section 86 includes, for example, a discharge line 87 extending from the drying tank 62 .
  • An on-off valve 88 and a flow controller 89 are provided in the middle of the discharge line 87 .
  • the control unit 57 is, for example, a computer, and includes a CPU (Central Processing Unit) 58 and a storage medium 59 such as a memory.
  • the storage medium 59 stores programs for controlling various processes executed in the substrate processing apparatus 50 .
  • the control unit 57 controls the operation of the substrate processing apparatus 50 by causing the CPU 58 to execute programs stored in the storage medium 59 .
  • the substrate holding unit 70 receives a plurality of substrates W from a transfer device (not shown) above the loading/unloading port 622 of the processing container 60 .
  • the elevating mechanism 55 lowers the substrate holder 70 .
  • the opening/closing mechanism 53 moves the lid 623 from the open position to the closed position, and closes the loading/unloading port 622 of the processing container 60 with the lid 623 .
  • the shutter 64 is positioned at the communication position so as not to interfere with the substrate holder 70 and the substrate W.
  • the elevating mechanism 55 lowers the substrate holder 70 to immerse the plurality of substrates W in the treatment liquid L as shown in FIG. Thereby, a plurality of substrates W are collectively processed.
  • the elevating mechanism 55 raises the substrate holding unit 70 to pull up the plurality of substrates W from the processing liquid L stored inside the processing tank 61, and the inner space of the drying tank 62 as shown in FIG. to stop.
  • the gas supply unit 80 supplies the inert gas G1 to the interior of the drying chamber 62, and the gas discharge unit 86 discharges the gas inside the drying chamber 62 to the outside to volatilize the droplets adhering to the substrate W. Dry the W.
  • the gas supply unit 80 may preheat the inert gas G1 in order to promote the drying of the substrate W.
  • the gas supply unit 80 may supply a mixed gas of the inert gas G1 and the vapor G2 of the organic solvent.
  • the organic solvent vapor G2 adheres to the substrate W, it condenses. The heat of condensation can heat the substrate W, and the drying of the substrate W can be accelerated.
  • the opening/closing mechanism 53 moves the lid 623 from the closed position to the open position to open the loading/unloading port 622 of the processing container 60 . Further, the elevating mechanism 55 lifts the substrate holding unit 70 to unload the plurality of substrates W to the outside of the processing container 60 . After that, the substrate holding part 70 transfers the substrate W to a transport device (not shown) above the loading/unloading port 622 of the processing container 60 .
  • the substrate processing apparatus 50 pulls up the substrate W immersed in the processing liquid L from the processing liquid L stored inside the processing tank 61 .
  • a first region A1 covered with the processing liquid L for example, pure water and an organic solvent
  • a second region A2 exposed from the processing liquid L and a first region A1 A boundary line A3 of the second area A2 is formed.
  • the boundary line A3 is moved in the direction in which the second area A2 expands, and the substrate W is dried.
  • the lifting mechanism 55 lifts the substrate W immersed in the processing liquid L from the processing liquid L stored inside the processing bath 61 by lifting the substrate holding unit 70 .
  • the boundary line A3 is lowered from the upper end of the substrate W toward the lower end.
  • the lifting mechanism 55 corresponds to the moving part described in the claims.
  • the liquid level of the processing liquid L may be lowered by discharging the processing liquid L stored inside the processing bath 61 through the discharge port 52 .
  • the boundary line A3 is lowered from the upper end of the substrate W toward the lower end.
  • the discharge port 52 corresponds to the moving part described in the claims.
  • the gas supply unit 80 may form a liquid film F containing an organic solvent on the pure water that is the treatment liquid L.
  • the organic solvent discharged from the nozzle 81 condenses on pure water that is colder than the organic solvent, forming a liquid film F.
  • the organic solvent forming the liquid film F preferably has a density lower than that of pure water.
  • the organic solvent has a smaller surface tension than pure water, when the substrate W passes through the liquid film F, the rinsing liquid and particles adhering to the substrate W can be taken into the liquid film F by the Marangoni effect. can promote. Moreover, since the organic solvent has a smaller surface tension than pure water, it is possible to suppress pattern collapse due to the surface tension.
  • the vibration of the substrate W can not only separate the tips of the adhering protrusions, but also suppress the adhesion of the tips of the protrusions themselves.
  • the substrate processing apparatus 50 includes vibrators 56A-56B for applying vibrations to the substrate W held by the substrate holding part 70.
  • FIG. The substrate processing apparatus 10 may include at least one of the oscillators 56A-56B.
  • the vibrators 56A-56B include piezoelectric elements, for example.
  • the material of the piezoelectric element is, for example, lead zirconate titanate (PZT).
  • the vibrators 56A-56B are connected to oscillators.
  • the oscillator vibrates the vibrators 56A-56B at a predetermined frequency.
  • the oscillator applies, for example, an alternating voltage to the vibrators 56A-56B.
  • An oscillator may be provided for each transducer 56A-56B to individually vibrate the transducers 56A-56B.
  • the oscillation frequencies of the vibrators 56A to 56B are not particularly limited, but are determined by the pitch of the protrusions of the uneven pattern of the substrate W, or the like. The higher the oscillation frequency, the shorter the wavelength of vibration.
  • the oscillation frequency is preferably set such that the vibration wavelength is twice or less than the pitch of the projections.
  • the oscillation frequency is, for example, 1 MHz or higher. From the viewpoint of suppressing damage to the PZT, the oscillation frequency is preferably 50 MHz or less, more preferably 10 MHz or less.
  • harmonics may be used, or an AC voltage other than the natural frequency may be applied to the vibrators 56A-56B.
  • the vibration may not be a sine wave, but may be a square wave or a pulse wave. Note that the vibration may be random vibration.
  • the vibrator 56A is attached to the substrate holding section 70 and applies vibration to the substrate W by applying vibration to the substrate holding section 70.
  • the material of the substrate holding portion 70 is preferably metal, glass, amorphous carbon, or ceramic, instead of resin that absorbs vibration. Ceramics are, for example, quartz or silicon carbide.
  • the substrate holding part 70 includes a plurality of (for example, four) arms 71A to 71D extending in the horizontal direction, a vertical back plate 72 for cantilevering the plurality of arms 71A to 71D, have The upper end portion 721 of the back plate 72 is exposed above the surface of the processing liquid L when the substrate W is immersed in the processing liquid L. As shown in FIG. The vibrator 56A is attached to the upper end portion 721 of the back plate 72, for example.
  • arms 71A to 71D are arranged in the width direction of the back plate 72.
  • the two arms 71B and 71C aligned in the center in the width direction are arranged below the two arms 71A and 71D provided at both ends in the width direction, and support the substrate W from below.
  • two arms 71A and 71D provided at both ends in the width direction support the substrate W obliquely from the side.
  • the substrate W is mainly supported by two arms 71B and 71C aligned in the center in the width direction. Therefore, as shown in FIG. 9, the vibrator 56A may be arranged vertically above at least one of the two arms 71B and 71C aligned in the center in the width direction when viewed from the front. Arms 71B and 71C can be vibrated efficiently, and substrate W can be vibrated efficiently.
  • the lower end portion 722 of the back plate 72 may have a chevron shape with the central portion protruding downward when viewed from the front.
  • the lower end portion 722 also functions as a connecting portion to which one ends of the multiple arms 71A to 71D are connected.
  • the lower end 722 may also include a reflective surface S configured to reflect vibrations applied to the back plate 72 by the transducers 56A, 56A toward the arms 71B, 71C, as shown in FIG. good.
  • the reflective surface S may be provided on an extension line of the arms 71B and 71C, which are targets of vibration reflection, or may be provided over the entire width of the lower end portion 722 .
  • the reflecting surface S may be a curved surface inclined toward the arms 71B and 71C, or may be a flat surface inclined toward the arms 71B and 71C.
  • the angle ⁇ formed by the reflecting surface S and the horizontal plane (extending direction of the arms 71B and 71C) may be, for example, 35° or more and 55° or less.
  • the vibrator 56B is attached to the bottom wall of the processing tank 61 (more specifically, the inner tank 611), and applies vibration to the processing liquid L from the bottom wall. Vibration is applied to the substrate W by doing so. Therefore, the material of the processing tank 61 is preferably metal, glass, amorphous carbon, or ceramic, rather than vibration-absorbing resin. Ceramics are, for example, quartz or silicon carbide.
  • the treatment liquid L may be degassed liquid.
  • a degassed liquid is a liquid whose dissolved gas concentration has been reduced by degassing. By using the degassed liquid, it is possible to suppress the occurrence of cavitation and reduce the impact caused when the cavitation is crushed. Therefore, it is possible to suppress the breakage of the convex portion and the generation of particles.
  • the oscillation frequency of the vibrator 56B is preferably 2 MHz or more. If the oscillation frequency is 2 MHz or more, the occurrence of cavitation can be suppressed.
  • vibration is applied to the substrate W when the boundary line A3 is moved. Vibration may be applied to the substrate W. In the latter case, for example, the vibrator 56A applies vibration to the substrate W via the substrate holder 70 while the substrate W is housed inside the drying chamber 62 .

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Molecular Biology (AREA)
  • Health & Medical Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Ce procédé de traitement de substrat comprend l'application de vibrations, à l'aide d'un vibreur, à un substrat qui a une première surface principale et une seconde surface principale se faisant face et qui comprend un motif d'évidement et de saillie sur la première surface principale, dans un état dans lequel la totalité de la première surface principale est exposée.
PCT/JP2022/013136 2021-04-01 2022-03-22 Appareil de traitement de substrat et procédé de traitement de substrat WO2022210088A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020237032188A KR20230163391A (ko) 2021-04-01 2022-03-22 기판 처리 장치, 및 기판 처리 방법
CN202280023841.7A CN117063266A (zh) 2021-04-01 2022-03-22 基片处理装置和基片处理方法
JP2023511011A JPWO2022210088A1 (fr) 2021-04-01 2022-03-22

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021-062694 2021-04-01
JP2021062694 2021-04-01

Publications (1)

Publication Number Publication Date
WO2022210088A1 true WO2022210088A1 (fr) 2022-10-06

Family

ID=83455283

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2022/013136 WO2022210088A1 (fr) 2021-04-01 2022-03-22 Appareil de traitement de substrat et procédé de traitement de substrat

Country Status (4)

Country Link
JP (1) JPWO2022210088A1 (fr)
KR (1) KR20230163391A (fr)
CN (1) CN117063266A (fr)
WO (1) WO2022210088A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11260779A (ja) * 1997-12-02 1999-09-24 Tadahiro Omi スピン洗浄装置及びスピン洗浄方法
JP2001017930A (ja) * 1999-07-08 2001-01-23 Dan Kagaku:Kk 基板の洗浄方法及びその装置
JP2007088257A (ja) * 2005-09-22 2007-04-05 Dainippon Screen Mfg Co Ltd 基板処理装置および基板乾燥方法
JP2009088227A (ja) * 2007-09-28 2009-04-23 Shibaura Mechatronics Corp 基板の処理装置及び処理方法
JP2013206977A (ja) * 2012-03-27 2013-10-07 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2019125608A (ja) * 2018-01-11 2019-07-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法及び基板処理装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5449953B2 (ja) 2009-09-29 2014-03-19 大日本スクリーン製造株式会社 基板処理装置および基板処理方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11260779A (ja) * 1997-12-02 1999-09-24 Tadahiro Omi スピン洗浄装置及びスピン洗浄方法
JP2001017930A (ja) * 1999-07-08 2001-01-23 Dan Kagaku:Kk 基板の洗浄方法及びその装置
JP2007088257A (ja) * 2005-09-22 2007-04-05 Dainippon Screen Mfg Co Ltd 基板処理装置および基板乾燥方法
JP2009088227A (ja) * 2007-09-28 2009-04-23 Shibaura Mechatronics Corp 基板の処理装置及び処理方法
JP2013206977A (ja) * 2012-03-27 2013-10-07 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2019125608A (ja) * 2018-01-11 2019-07-25 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法及び基板処理装置

Also Published As

Publication number Publication date
JPWO2022210088A1 (fr) 2022-10-06
KR20230163391A (ko) 2023-11-30
CN117063266A (zh) 2023-11-14

Similar Documents

Publication Publication Date Title
US11289324B2 (en) Substrate treatment method and substrate treatment apparatus
US7032269B2 (en) Brush scrubbing-high frequency resonating substrate processing system
JP5789598B2 (ja) 粘弾性洗浄材料を使用して基板上の粒子を除去するための方法
JP2000188273A (ja) 半導体基板の洗浄装置及び洗浄方法
JPH1154471A (ja) 処理装置及び処理方法
SG174616A1 (en) Methods and apparatus for cleaning semiconductor wafers
KR20080030481A (ko) 기판처리방법 및 기판처리장치
TW201237951A (en) Liquid processing method, liquid processing apparatus and recording medium
KR100468110B1 (ko) 웨이퍼 처리 장치
WO2022210088A1 (fr) Appareil de traitement de substrat et procédé de traitement de substrat
TWI753353B (zh) 基板處理方法以及基板處理裝置
PL208012B1 (pl) Sposób i system do obróbki płytek półprzewodnikowych oraz przyrząd i głowica do stosowania tego sposobu
JP2018110272A (ja) 基板処理方法および基板処理装置
JP2005142309A (ja) 基板の洗浄方法、洗浄装置および洗浄システム
KR20080030203A (ko) 기판 세정 장치 및 이를 이용한 기판의 세정 방법
KR100927029B1 (ko) 트랜스듀서 및 이를 포함하는 기판 세정 장치
KR100927028B1 (ko) 초음파 노즐 및 이를 포함하는 기판 세정 장치
JP2007324509A (ja) 基板洗浄装置および基板洗浄方法
JP2702473B2 (ja) 洗浄方法
WO2023188154A1 (fr) Procédé de nettoyage de composant électronique
TWI528436B (zh) 用以處理平坦物體之聲波能量系統、方法及裝置
US20240258125A1 (en) Electronic component cleaning apparatus
JP7414335B1 (ja) 電子部品洗浄装置
JPH08299928A (ja) 基板の表面処理用超音波発生装置
KR100938249B1 (ko) 초음파 발생 장치 및 이를 포함하는 기판 세정 장치

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22780303

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2023511011

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 202280023841.7

Country of ref document: CN

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 22780303

Country of ref document: EP

Kind code of ref document: A1