WO2021235066A1 - Procédé de fabrication de support pour dispositif de polissage double face, support pour dispositif de polissage double face, et procédé de polissage double face de tranche - Google Patents

Procédé de fabrication de support pour dispositif de polissage double face, support pour dispositif de polissage double face, et procédé de polissage double face de tranche Download PDF

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Publication number
WO2021235066A1
WO2021235066A1 PCT/JP2021/010649 JP2021010649W WO2021235066A1 WO 2021235066 A1 WO2021235066 A1 WO 2021235066A1 JP 2021010649 W JP2021010649 W JP 2021010649W WO 2021235066 A1 WO2021235066 A1 WO 2021235066A1
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WO
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Prior art keywords
double
carrier
polishing
wafer
sided polishing
Prior art date
Application number
PCT/JP2021/010649
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English (en)
Japanese (ja)
Inventor
容輝 吉田
佑宜 田中
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信越半導体株式会社
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Priority to CN202180031139.0A priority Critical patent/CN115485813A/zh
Priority to KR1020227039248A priority patent/KR20230011291A/ko
Publication of WO2021235066A1 publication Critical patent/WO2021235066A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/28—Work carriers for double side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

Definitions

  • the present invention relates to a method for manufacturing a carrier for a double-sided polishing machine and a method for double-sided polishing of a wafer using the same.
  • a carrier for the double-sided polishing device having the same number of holding holes as the number of wafers is installed on the lower platen.
  • the wafer is held by the holding holes of the carrier, the wafer is sandwiched from both sides by the polishing cloth provided on the upper and lower surface plates, and polishing is performed while supplying the polishing agent to the polishing surface.
  • Metal carriers are the mainstream of carriers for double-sided polishing machines (hereinafter, also simply referred to as carriers) having holding holes for holding wafers.
  • a resin insert is provided in the inner peripheral portion of the wafer holding hole of the carrier. Since the resin insert is in contact with the outer peripheral portion of the wafer, it is important for creating the edge shape of the wafer.
  • One of the parameters related to the resin insert is a step with the metal substrate (carrier base material). An example of this step will be described below.
  • FIG. 6 shows a graph of the step profile between the resin insert and the carrier base material after the carrier has been start-up polished by the conventional technique.
  • the upper part is a schematic diagram showing the step between the resin insert and the carrier base material, and the height of the step between the resin insert and the carrier base material is scanned by contact-type measurement on the front and back surfaces of the carrier, respectively. Was measured.
  • the measurement result of the step amount is the middle graph, and the horizontal axis shows the distance in the radial direction of the carrier, and the vertical axis shows the step amount. 0 mm on the horizontal axis corresponds to the boundary between the carrier base material (minus) and the resin insert (plus).
  • the step amount is approximately 0 ⁇ m in the carrier base material portion.
  • a step from the front surface or the back surface of the carrier base material is shown, and if it is positive, it indicates that it protrudes from the carrier base material, and if it is negative, it indicates that it is recessed from the carrier base material.
  • the lower graph shows the results of measuring the amount of step between the front surface and the back surface and the difference between the front and back surfaces at a total of four locations moved by 90 ° on the resin insert. It can be seen that the difference between the front and back of the step amount is large at any of the points.
  • the above method is not only affected by the life of the member such as clogging of the pad (abrasive cloth) and the aggregated state of the slurry (abrasive), but also by the accuracy of the device and the warp of the carrier.
  • Either the front side or the back side of the resin insert is preferentially scraped, and the reduction of the difference between the front and back sides of the step amount cannot be sufficiently achieved.
  • the ZDD on the front and back sides of the wafer is different during wafer processing. A case was seen. Therefore, a simpler method for start-up polishing of a carrier having a resin insert, which is less dependent on the above-mentioned influence, has been desired.
  • the present invention has been made to solve such a problem, and to provide a method for manufacturing a carrier for a double-sided polishing machine capable of reducing the difference between the front and back sides of the step amount between the resin insert and the carrier base material. The purpose.
  • a carrier base material used in a double-sided polishing apparatus having an upper platen and a lower platen to which a polishing cloth is attached and having holding holes for holding a wafer
  • a method for manufacturing a carrier for a double-sided polishing machine comprising a resin insert arranged along the inner peripheral surface of a holding hole and having an inner peripheral portion in contact with the outer peripheral portion of the wafer, wherein the carrier base material and the carrier are provided.
  • a preparatory step for preparing the resin insert thicker than the base material a forming step for forming the resin insert on the inner peripheral surface of the holding hole so as to be non-adhesive and having a peeling strength of 10 N or more and 50 N or less, and the carrier.
  • a carrier for a double-sided polishing machine characterized in that the carrier composed of a base material and the resin insert is subjected to a rising-up polishing step in which the carrier is subjected to the start-up polishing in which the load is two or more stages by using the double-sided polishing device. Provides a manufacturing method for.
  • the amount of step between the resin insert and the carrier base material can be increased between the front surface side and the back surface side.
  • the vertical position of the resin insert can be adjusted so that the difference is small, that is, the protrusion of the resin insert is more symmetrical on the front and back.
  • the peel strength is 10 N or more, it is possible to prevent the resin insert from peeling from the carrier base material by polishing.
  • the resin insert is adjusted to the optimum position while reducing the amount of step between the resin insert and the carrier base material in the first stage polishing.
  • the amount of step between the resin insert and the carrier base material can be further reduced by polishing the second and subsequent steps, and the difference between the front and back sides of the step amount can be easily reduced. Further, by polishing both sides of the wafer using the carrier thus produced, a polished wafer having a small difference between the front and back sides of the ZDD at the edge can be obtained.
  • the load at the time of start-up polishing is multi-step of two or more steps includes the case where the same load is applied and the start-up polishing is performed a plurality of times.
  • the load of the first stage of the two or more stages can be 150 gf / cm 2 or more and 250 gf / cm 2 or less. If the load of the first stage is 150 gf / cm 2 (14.7 kPa) or more, the load is sufficient to adjust the position of the resin insert. Further, when it is 250 gf / cm 2 (24.5 kPa) or less, it is possible to more effectively suppress the non-adhesive resin insert from peeling from the carrier base material due to the frictional force with the polishing cloth.
  • the load of the first stage of the multi-stage of two or more stages can be made larger than the load of the second stage. If the load of the first stage of the start-up polishing is larger than the load of the second stage, it is more effective that the position of the resin insert adjusted by the first stage polishing is displaced by the second stage polishing. It can be suppressed.
  • the wafer in the double-sided polishing method for a wafer, the wafer is held in the holding hole of the double-sided polishing machine carrier manufactured by the above-mentioned method for manufacturing the double-sided polishing machine carrier, and the double-sided polishing machine is said to have the same.
  • the wafer is polished on both sides by sandwiching it between the upper and lower platens and rotating the upper and lower platens, and the difference between the front and back sides of the ZDD at the edge of the wafer after the double-side polishing is 5 nm or less.
  • a method for polishing both sides of a wafer is provided. With such a double-sided polishing method for a wafer, the difference between the front and back sides of the ZDD at the edge of the wafer after double-sided polishing is reduced as compared with the conventional method.
  • double-sided polishing it is possible to perform double-sided polishing in which the load is two or more stages.
  • double-sided polishing with two or more stages of polishing, the position of the resin insert of the carrier can be stabilized by the first stage of polishing, and then the wafer can be polished by the second and subsequent stages of polishing. It is possible to effectively improve ZDD.
  • the load of the first stage of the two or more stages can be 150 gf / cm 2 or more and 250 gf / cm 2 or less.
  • Such a load is a load sufficient to stabilize the position of the resin insert, and the resin insert can be more effectively suppressed from peeling from the carrier base material.
  • the load of the first stage of the multi-stage of two or more stages can be made larger than the load of the second stage. With such a load, it is possible to more effectively prevent the position of the resin insert stabilized by the first-stage polishing from being displaced when the second-stage polishing is performed.
  • the difference between the front and back sides of the step amount between the resin insert and the carrier base material can be easily reduced, and as a result, double-sided polishing of the wafer can be performed. It is possible to reduce the difference between the front and back sides of the ZDD of the wafer after polishing when it is used in the above.
  • the present inventors did not bond the resin inserts as in the prior art, but adjusted the number of wedge-shaped fittings and the outer diameter of the resin inserts to adjust the resin inserts.
  • the problem can be solved by preparing a carrier having a peel strength of 10 N or more and 50 N or less from the carrier base material and increasing the load to two or more stages during the start-up polishing of the resin insert. Completed.
  • FIG. 2 is a top view of a carrier for a double-sided polishing machine manufactured by the manufacturing method of the present invention.
  • the carrier 1 has a carrier base material 3 in which a holding hole 2 for holding a wafer is formed, and a resin insert 4 formed in a non-adhesive portion on the inner peripheral portion of the holding hole 2.
  • the holding hole 2 shows one carrier base material 3 here, the present invention is not limited to this, and may have a plurality of holding holes 2.
  • the material of the carrier base material 3 is not particularly limited, and for example, a metal substrate can be used.
  • the resin insert 4 for example, as shown in FIG.
  • the ring-shaped portion 4a may be composed of a ring-shaped portion 4a and a wedge 4b protruding outward from the ring-shaped portion 4a.
  • the number of wedges 4b and the outer diameter of the ring-shaped portion 4a are not particularly limited. However, it is formed by adjusting so that the peel strength described later is 10 N or more and 50 N or less. Further, the difference between the front and back of the step is small (for example, the amount of the step is about 11.034 ⁇ m and the difference between the front and back is about 11.77 ⁇ m).
  • Such a carrier 1 is used, for example, when the wafer W is double-sided polished in the 4-way double-sided polishing apparatus 10 as shown in FIG.
  • the double-sided polishing apparatus 10 includes an upper surface plate 11 and a lower surface plate 12 provided so as to face each other in the vertical direction.
  • Abrasive cloth 13 is attached to the upper and lower surface plates 11 and 12, respectively.
  • a sun gear 14 is provided in the central portion between the upper surface plate 11 and the lower surface plate 12, and an internal gear 15 is provided in the peripheral portion.
  • the outer peripheral teeth of the carrier 1 are meshed with the teeth of the sun gear 14 and the internal gear 15, and the carrier 1 is rotated by a drive source (not shown) as the upper surface plate 11 and the lower surface plate 12 are rotated. It revolves around the sun gear 14 while rotating.
  • both sides of the wafer W held by the holding holes 2 of the carrier 1 are simultaneously polished by the upper and lower polishing cloths 13.
  • the slurry 17 is supplied from the slurry supply device 16 to the polished surface of the wafer W.
  • FIG. 1 is a flow chart illustrating an outline of a method for manufacturing a carrier for a double-sided polishing apparatus and a method for double-sided polishing of a wafer according to the present invention.
  • a carrier base material 3 and a thicker resin insert 4 are prepared.
  • the carrier base material 3 having one holding hole 2 is used here, the present invention is not limited to this, and may have a plurality of holding holes 2.
  • the materials of the carrier base material 3 and the resin insert 4 are not particularly limited, and the carrier base material 3 may be made of a metal such as stainless steel or titanium, or may be surface-hardened. .. Further, the resin insert 4 can be made of, for example, a hard resin.
  • the resin insert 4 is formed on the inner peripheral surface of the holding hole 2.
  • the method for forming the resin insert 4 is not particularly limited, and the resin insert 4 can be formed, for example, by fitting or injection molding.
  • the resin insert 4 and the carrier base material 3 are not bonded to each other, and the peel strength is adjusted by adjusting the number and shape of the fitting wedges 4b as shown in FIG. 3, the outer diameter of the resin insert 4, and the like. Is 10N or more and 50N or less.
  • the peel strength referred to here means, for example, the maximum load at which the measurement point 5 as shown in FIG. 3 is pushed from the upper surface by a force gauge and the resin insert 4 is peeled from the carrier base material 3.
  • the peel strength is 50 N or less
  • the position of the resin insert 4 in the vertical direction so that the difference between the front surface side and the back surface side of the step amount between the resin insert 4 and the carrier base material 3 becomes small in the next rising polishing step. (Position in the thickness direction with respect to the carrier base material 3) can be adjusted.
  • the peel strength is 10 N or more, it is possible to prevent the resin insert 4 from peeling from the carrier base material 3 by polishing. For example, by using a wedge 4b having a number of 100 or less and a height of 5 mm or less, a peel strength of 50 N or less can be more reliably achieved.
  • the carrier 1 is subjected to start-up polishing to reduce the amount of step between the resin insert 4 and the carrier base material 3, and the carrier 1 having a small difference in the amount of step between the front and back is manufactured. do.
  • the start-up polishing can be performed by mounting the carrier 1 on the double-sided polishing apparatus 10 as shown in FIG. 4 and performing double-sided polishing without holding the wafer W in the holding hole 2.
  • the types of the polishing pad 13 and the slurry 17 are not particularly limited, and the same ones as those of the conventional method can be used.
  • the load for start-up polishing is set to two or more stages. That is, a load is applied and the surface is polished a plurality of times.
  • the amount of step between the resin insert 4 and the carrier base material 3 can be reduced by the first stage polishing, and the resin insert 4 can be adjusted to the optimum position.
  • the optimum position here means, for example, a position where the difference in the degree of protrusion of the resin insert 4 on the front surface side and the back surface side is almost equal.
  • the amount of step between the resin insert 4 and the carrier base material 3 can be further reduced by polishing the second and subsequent steps.
  • the number of stages of the multi-stage load may be a plurality of stages, may be only two stages, or may be three or more stages.
  • the number of steps may be determined each time according to, for example, the amount of steps and the difference between the front and back sides of the step amount, and the upper limit of the number of steps cannot be determined.
  • the load of the first stage can be 150 gf / cm 2 or more and 250 gf / cm 2 or less. If it is 150 gf / cm 2 or more, the load is sufficient to adjust the position of the resin insert 4. Further, when it is 250 gf / cm 2 or less, it is possible to more effectively suppress the non-adhesive resin insert 4 from peeling from the carrier base material 3 due to the frictional force with the polishing cloth. Further, the load of the first stage can be made larger than the load of the second stage.
  • the load of the second stage is 200 gf / cm 2 (19.6 kPa) or less, which is smaller than the load of the first stage, as opposed to the load of the first stage of 150 gf / cm 2 or more and 250 gf / cm 2 or less. be able to. By doing so, it is possible to more effectively prevent the position of the resin insert 4 adjusted in the first-stage polishing from moving when the second-stage polishing is performed and shifting the position. can.
  • the load can be the same value in each stage, or conversely, the load in the first stage can be made smaller than the load in the second stage, but the load in the first stage can be the load in the second stage. By making it larger, the difference between the front and back of the step amount can be efficiently reduced.
  • both sides of the wafer are polished using the manufactured carrier 1.
  • the wafer W is held in the holding hole 2 of the carrier 1, sandwiched between the upper surface plate 11 and the lower surface plate 12 of the double-sided polishing apparatus 10, and the upper surface plate 11 and the lower surface plate 12 are rotated. It is done by.
  • the types of the polishing pad 13 and the slurry 17 are not particularly limited, and the same ones as those of the conventional method can be used.
  • a wafer having a ZDD front-to-back difference of 5 nm or less at the edge it is possible to obtain a wafer having a ZDD front-to-back difference of 5 nm or less at the edge.
  • the load for double-sided polishing can be set to two or more stages, as in the case of the carrier start-up polishing in step 3. By doing so, the wafer can be polished after stabilizing the resin insert 4 at the optimum position, and the ZDD can be improved more effectively.
  • the number of stages of the load during double-sided polishing may be determined each time according to, for example, the amount of polishing, the polishing time, etc., and the upper limit of the number of stages cannot be determined.
  • the load of the first stage can be 150 gf / cm 2 or more and 250 gf / cm 2 or less. By doing so, the load is sufficient to stabilize the position of the resin insert 4, and the resin insert can be more effectively suppressed from peeling from the carrier base material.
  • the load of the first stage can be made larger than the load of the second stage.
  • Example 1 According to the flow of FIG. 1, the carrier for the double-sided polishing apparatus of the present invention was manufactured and double-sided polishing of a wafer having a diameter of 300 mm was performed. As shown in FIGS. 2 and 3, a resin insert 4 (material: FRP) was formed non-adhesively on the inner peripheral portion of the holding hole 2 of the carrier base material 3 (material: titanium). At that time, by increasing the number of wedges 4b to 80, a resin insert 4 having a peel strength of 40 N was manufactured.
  • FRP material: titanium
  • a DSP-20B manufactured by Nachi-Fujikoshi Machinery Co., Ltd. which is a 4-way double-sided polishing device, was used as the double-sided polishing device 10 as shown in FIG.
  • a urethane foam pad having a shore A hardness of 90 was used for the polishing cloth 13, and a slurry 17 containing silica abrasive grains, an average particle size of 35 nm, an abrasive grain concentration of 1.0 wt%, a pH of 10.5, and a KOH base was used.
  • the position of the insert is stabilized by applying a load of 150 gf / cm 2 in the first stage, and 100 gf / cm 2 (9.8 kPa) in the second stage. It was set as a two-stage load for polishing by applying the load of.
  • Comparative Example 1 In both start-up polishing and double-sided polishing, carriers are manufactured and wafers are double-sided polished in the same manner as in Example 1, except that a one-stage load is applied in which a load of 100 gf / cm 2 is applied and polishing is performed only once. rice field.
  • Example 2 The carrier was manufactured and the wafer was double-sided polished in the same manner as in Example 1 except that the peel strength was set to 60 N by setting the number of wedges of the resin insert of the carrier to 130.
  • Comparative Example 3 In both start-up polishing and double-sided polishing, carriers are manufactured and wafers are double-sided polished in the same manner as in Comparative Example 2, except that a one-stage load is applied in which a load of 100 gf / cm 2 is applied and polishing is performed only once. rice field.
  • Example 4 As a carrier, an adhesive carrier in which a resin insert (shape: ring-shaped, without wedges) is adhered to and fixed to a carrier base material was adopted, and the peel strength thereof was set to 200 N. Other than that, the carrier was manufactured and the wafer was polished on both sides in the same manner as in Example 1.
  • Comparative Example 5 In both start-up polishing and double-sided polishing, carriers are manufactured and wafers are double-sided polished in the same manner as in Comparative Example 4, except that a one-stage load is applied in which a load of 100 gf / cm 2 is applied and polishing is performed only once. rice field.
  • Example 1 The difference between the front and back of the step amount between the resin insert of each carrier and the carrier base material is Example 1: 0.932 ⁇ m, Comparative Example 1: 7.192 ⁇ m, Comparative Example 2: 7.71 ⁇ m, Comparative Example 3: 6.286 ⁇ m. , Comparative Example 4: 12.272 ⁇ m, Comparative Example 5: 14.378 ⁇ m.
  • Example 2 The carrier was manufactured and the wafer was double-sided polished in the same manner as in Example 1 except that the peel strength was set to 50 N by setting the number of wedges of the resin insert of the carrier to 100.
  • Example 3 The carrier was manufactured and the wafer was double-sided polished in the same manner as in Example 1 except that the peel strength was set to 10 N by setting the number of wedges of the resin insert of the carrier to 20.
  • the difference between the front and back of the step amount between the resin insert of each carrier and the carrier base material was Example 2: 3.912 ⁇ m and Example 3: 3.514 ⁇ m.
  • the difference between the front and back sides of the ZDD at the edge of the wafer after double-side polishing was Example 2: 4.7 nm and Example 3: 4.5 nm. Further, in Comparative Example 6 in which polishing was performed in a state where the peel strength was less than 10 N, it was confirmed that the resin insert was removed during polishing.
  • the difference between the front and back sides of the step amount between the resin insert and the carrier base material can be reduced, and as a result, the front and back difference of the ZDD of the wafer is reduced. be able to.
  • the present invention is not limited to the above embodiment.
  • the above embodiment is an example, and any one having substantially the same configuration as the technical idea described in the claims of the present invention and having the same effect and effect is the present invention. It is included in the technical scope of the invention.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
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Abstract

La présente invention concerne un procédé de fabrication d'un support pour un dispositif de polissage double face présentant une plaque de surface supérieure et une plaque de surface inférieure avec des tissus de polissage adhérant à celle-ci, ledit support comportant un matériau de base de support et un insert en résine, ledit matériau de base de support présentant un trou de retenue formé à l'intérieur de celui-ci pour retenir une tranche, et ledit insert en résine étant positionné le long d'une surface de circonférence interne du trou de retenue et présentant une section de circonférence interne formée à l'intérieur de celui-ci qui entre en contact avec une section de circonférence externe de la tranche. Le présent procédé de fabrication d'un support pour un dispositif de polissage double face comprend : une étape de préparation dans laquelle le matériau de base de support et l'insert en résine, qui est plus épais que le matériau de base de support, sont préparés ; une étape de formation dans laquelle l'insert en résine est formé sur la surface de circonférence interne du trou de retenue d'une manière non liée et de manière à avoir une résistance au pelage de 10N à 50N ; et une étape de polissage de démarrage dans laquelle le dispositif de polissage double face est utilisé pour effectuer un polissage de démarrage, avec une charge à niveaux multiples d'au moins deux niveaux, du support qui comprend le matériau de base de support et l'insert en résine. En conséquence, la présente invention concerne un procédé de fabrication d'un support pour un dispositif de polissage double face, l'écart entre l'avers et le revers dans la différence de niveau entre l'insert en résine et le matériau de base de support dans le support pour un dispositif de polissage double face pouvant être réduit.
PCT/JP2021/010649 2020-05-19 2021-03-16 Procédé de fabrication de support pour dispositif de polissage double face, support pour dispositif de polissage double face, et procédé de polissage double face de tranche WO2021235066A1 (fr)

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Application Number Priority Date Filing Date Title
CN202180031139.0A CN115485813A (zh) 2020-05-19 2021-03-16 双面研磨装置用载具的制造方法及晶圆的双面研磨方法
KR1020227039248A KR20230011291A (ko) 2020-05-19 2021-03-16 양면연마장치용 캐리어의 제조방법 및 웨이퍼의 양면연마방법

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JP2020087470A JP7276246B2 (ja) 2020-05-19 2020-05-19 両面研磨装置用キャリアの製造方法及びウェーハの両面研磨方法
JP2020-087470 2020-05-19

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KR (1) KR20230011291A (fr)
CN (1) CN115485813A (fr)
TW (1) TW202144121A (fr)
WO (1) WO2021235066A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
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