WO2021149452A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2021149452A1
WO2021149452A1 PCT/JP2020/048436 JP2020048436W WO2021149452A1 WO 2021149452 A1 WO2021149452 A1 WO 2021149452A1 JP 2020048436 W JP2020048436 W JP 2020048436W WO 2021149452 A1 WO2021149452 A1 WO 2021149452A1
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WIPO (PCT)
Prior art keywords
conductive layer
insulating
semiconductor
connecting member
semiconductor element
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PCT/JP2020/048436
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English (en)
French (fr)
Inventor
沢水 神田
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ローム株式会社
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Publication date
Application filed by ローム株式会社 filed Critical ローム株式会社
Priority to US17/755,842 priority Critical patent/US20220384297A1/en
Priority to CN202080092851.7A priority patent/CN114981959A/zh
Priority to JP2021573030A priority patent/JPWO2021149452A1/ja
Priority to DE112020005302.4T priority patent/DE112020005302T5/de
Priority to DE212020000610.5U priority patent/DE212020000610U1/de
Publication of WO2021149452A1 publication Critical patent/WO2021149452A1/ja

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Definitions

  • This disclosure relates to semiconductor devices.
  • a first semiconductor element provided on the first insulating member As an example of the semiconductor device, a first semiconductor element provided on the first insulating member, a second insulating member arranged above the first semiconductor element, and a second semiconductor provided on the second insulating member.
  • a semiconductor device having a double-sided heat dissipation structure including an element is known (see, for example, Patent Document 1).
  • This semiconductor device has a configuration in which a first cooler is attached to a first insulating member and a second cooler is attached to a second insulating member.
  • the semiconductor device may be used in a state where either one of the first cooler and the second cooler, for example, the second cooler is omitted.
  • the difference between the thermal resistance from the first semiconductor element to the first cooler and the thermal resistance from the second semiconductor element to the first cooler becomes large.
  • the semiconductor device is driven, the temperature of the first semiconductor element and the second semiconductor element, whichever has the higher thermal resistance, becomes higher, so that the performance of the semiconductor device may not be fully exhibited.
  • An object of the present disclosure is to provide a semiconductor device capable of suppressing an increase in the difference between the thermal resistance from the first semiconductor element to the cooler and the thermal resistance from the second semiconductor element to the cooler.
  • a semiconductor device that solves the above problems has a first insulating main surface and a first insulating back surface that face opposite sides in the thickness direction, and has a first insulating member with the first insulating back surface exposed and the first insulating member.
  • the first driving conductive layer provided on the insulating main surface, the first semiconductor element mounted on the first driving conductive layer, the second insulating main surface facing opposite to each other in the thickness direction, and the second. It has an insulating back surface, the second insulating back surface is exposed, and the thickness of the first insulating member is such that the second insulating main surface faces the first insulating main surface in the thickness direction.
  • the second insulating member arranged apart from each other in the longitudinal direction, the second driving conductive layer provided on the second insulating main surface, the second semiconductor element mounted on the second driving conductive layer, and the above.
  • a connecting member that forms a heat transfer path between at least one of the first insulating member and the first driving conductive layer and at least one of the second insulating member and the second driving conductive layer, and the said.
  • a first semiconductor element, the second semiconductor element, and a sealing resin for sealing the connecting member are provided, and the thermal conductivity of the connecting member is higher than the thermal conductivity of the sealing resin.
  • a heat transfer path from the second semiconductor element to the cooler is formed via the connecting member. Therefore, when the cooler is not attached to the second insulating member on which the second semiconductor element is mounted. In addition, it is possible to suppress an increase in the difference between the thermal resistance from the first semiconductor element to the cooler and the thermal resistance from the second semiconductor element to the cooler.
  • the above semiconductor device it is possible to suppress an increase in the difference between the thermal resistance from the first semiconductor element to the cooler and the thermal resistance from the second semiconductor element to the cooler.
  • FIG. 1 The perspective view of the semiconductor device of this embodiment.
  • the plan view of the semiconductor device of FIG. A side view of the semiconductor device of FIG. A side view of the semiconductor device of FIG. 1 as viewed from a direction different from that of FIG.
  • FIG. 2 is a cross-sectional view taken along the line 8-8 of FIG.
  • the circuit diagram of the semiconductor device of this embodiment Sectional drawing of the semiconductor device of the comparative example.
  • the plan view of the 2nd semiconductor unit of the semiconductor device of the modified example The plan view of the 2nd semiconductor unit of the semiconductor device of the modified example.
  • the plan view of the 2nd semiconductor unit of the semiconductor device of the modified example The plan view of the 2nd semiconductor unit of the semiconductor device of the modified example.
  • the plan view of the 2nd semiconductor unit of the semiconductor device of the modified example The plan view of the 2nd semiconductor unit of the semiconductor device of the modified example.
  • the plan view of the 2nd semiconductor unit of the semiconductor device of the modified example. The plan view of the 2nd semiconductor unit of the semiconductor device of the modified example.
  • Cross-sectional view of the semiconductor device of the modified example Cross-sectional view of the semiconductor device of the modified example.
  • Cross-sectional view of the semiconductor device of the modified example Cross-sectional view of the semiconductor device of the modified example.
  • the plan view of the 1st semiconductor unit of the semiconductor device of the modified example Cross-sectional view of the semiconductor device of the modified example.
  • the configuration of the semiconductor device 1 of the present embodiment will be described with reference to FIGS. 1 to 9.
  • the cooler 200 which will be described later, is omitted in FIG.
  • the sealing resin 70 which will be described later, is omitted in FIGS. 6 and 7.
  • the two directions orthogonal to each other are defined as the x direction and the y direction, respectively, and the directions orthogonal to the x direction and the y direction are defined as the z direction.
  • the z direction is an example of the thickness direction
  • the y direction is an example of the first direction
  • the x direction is an example of the second direction.
  • the semiconductor device 1 encloses a plurality of (four in this embodiment) first semiconductor elements 50A and a plurality of (four in this embodiment) second semiconductor elements 50B. It is a configuration sealed by 70. As shown in FIGS. 1 to 5, when the semiconductor device 1 is attached to the cooler 200, the heat of each of the first semiconductor elements 50A (see FIG. 6) and each of the second semiconductor elements 50B (see FIG. 7) is generated. Move to cooler 200.
  • the sealing resin 70 is made of a resin material having electrical insulation, for example, a black epoxy resin.
  • the sealing resin 70 has a rectangular parallelepiped shape and has resin side surfaces 71 to 74, a first resin main surface 75A, and a second resin main surface 75B.
  • the resin side surface 71 and the resin side surface 72 face opposite to each other in the y direction.
  • the resin side surfaces 71 and 72 extend along the x direction, respectively.
  • the resin side surface 73 and the resin side surface 74 face opposite to each other in the x direction.
  • the resin side surfaces 73 and 74 extend along the y direction, respectively.
  • the first resin main surface 75A and the second resin main surface 75B face each other in the z direction.
  • the cooler 200 is attached to the first resin main surface 75A. Therefore, the second resin main surface 75B is the surface opposite to the cooler 200 in the z direction.
  • the semiconductor device 1 includes a plurality of terminals 80 protruding from the sealing resin 70.
  • Each of the plurality of terminals 80 is made of a metal plate, for example, Cu (copper).
  • the plurality of terminals 80 include a first input terminal 81, a second input terminal 82, an output terminal 83, a first control terminal 84A, a first detection terminal 85A, a second control terminal 84B, and a second detection terminal 85B.
  • the first input terminal 81, the second input terminal 82, and the output terminal 83 each project from the resin side surface 71 in the y direction.
  • the first control terminal 84A, the first detection terminal 85A, the second control terminal 84B, and the second detection terminal 85B each project from the resin side surface 72 in the y direction.
  • the first input terminal 81, the second input terminal 82, and the output terminal 83, and the first control terminal 84A, the first detection terminal 85A, the second control terminal 84B, and the second detection terminal 85B are The sealing resins 70 project from opposite sides in the y direction.
  • the first input terminal 81, the second input terminal 82, and the output terminal 83 are arranged at the same position in the z direction and separated from each other in the x direction.
  • Each terminal 81 to 83 is formed in a flat plate shape with the z direction as the thickness direction.
  • the first control terminal 84A, the first detection terminal 85A, the second control terminal 84B, and the second detection terminal 85B are arranged at the same position in the z direction and separated from each other in the x direction.
  • the first control terminal 84A and the first detection terminal 85A are arranged closer to the resin side surface 74 when viewed from the z direction.
  • the second control terminal 84B and the second detection terminal 85B are arranged closer to the resin side surface 73 when viewed from the z direction.
  • Each terminal 84A, 84B, 85A, 85B is formed in a square columnar shape extending in the y direction.
  • the semiconductor device 1 includes a first semiconductor unit 1A and a second semiconductor unit 1B.
  • the semiconductor device 1 has a configuration in which the first semiconductor unit 1A and the second semiconductor unit 1B face each other in the z direction.
  • the sealing resin 70 is filled between the first semiconductor unit 1A and the second semiconductor unit 1B in the z direction, and surrounds the first semiconductor unit 1A and the second semiconductor unit 1B from the x direction and the y direction. It is configured. That is, a part of the first semiconductor unit 1A and a part of the second semiconductor unit 1B are each exposed in the z direction from the sealing resin 70.
  • the first semiconductor unit 1A includes a first insulating member 10A, a first driving conductive layer 20A, a control conductive layer 40A, and a plurality of (four in this embodiment) first semiconductor elements 50A. It has.
  • the first semiconductor unit 1A is arranged at both ends of the sealing resin 70 in the z direction, whichever is closer to the first resin main surface 75A. That is, in the z direction, the first semiconductor unit 1A is arranged closer to the cooler 200 than the second semiconductor unit 1B.
  • the first insulating member 10A is a substrate having electrical insulating properties formed in a flat plate shape with the z direction as the thickness direction.
  • the shape of the first insulating member 10A viewed from the z direction is rectangular.
  • the first insulating member 10A has a first insulating main surface 10As and a first insulating back surface 10Ar facing opposite sides in the z direction.
  • the first insulating main surface 10As faces the side opposite to the cooler 200 in the z direction. That is, the first insulating main surface 10As faces the same side as the second resin main surface 75B of the sealing resin 70.
  • the first insulating back surface 10Ar faces the cooler 200 in the z direction.
  • the first insulating back surface 10Ar faces the same side as the first resin main surface 75A of the sealing resin 70. As shown in FIG. 8, the first insulating back surface 10Ar of the first insulating member 10A of the first semiconductor unit 1A is exposed in the z direction from the first resin main surface 75A of the sealing resin 70. In the present embodiment, the first insulating back surface 10Ar is flush with the first resin main surface 75A. A cooler 200 is attached to the first insulating back surface 10Ar.
  • the position of the first insulating back surface 10Ar in the z direction with respect to the first resin main surface 75A can be arbitrarily changed.
  • the first insulating back surface 10Ar may be provided so as to project in the z direction from the first resin main surface 75A.
  • the cooler 200 is attached to the first insulating back surface 10Ar. That is, a gap is formed between the cooler 200 and the first resin main surface 75A in the z direction.
  • the first insulating member 10A has insulating side surfaces 11A to 14A.
  • the insulating side surface 11A and the insulating side surface 12A face each other in the y direction. When viewed from the z direction, the insulating side surfaces 11A and 12A extend in the x direction, respectively.
  • the insulating side surface 11A faces the same side as the resin side surface 71 of the sealing resin 70, and the insulating side surface 12A faces the same side as the resin side surface 72 of the sealing resin 70.
  • the insulating side surface 13A and the insulating side surface 14A face each other in the x direction. When viewed from the z direction, the insulating side surfaces 13A and 14A extend in the y direction, respectively.
  • the insulating side surface 13A faces the same side as the resin side surface 73 of the sealing resin 70, and the insulating side surface 14A faces the same side as the resin side surface 74 of the sealing resin 70.
  • the first driving conductive layer 20A and the controlling conductive layer 40A are each formed on the first insulating main surface 10As of the first insulating member 10A.
  • Each of the conductive layers 20A and 40A is made of, for example, Cu.
  • the first driving conductive layer 20A and the controlling conductive layer 40B are arranged apart from each other on the first insulating main surface 10As.
  • the first drive conductive layer 20A has a first drive wiring 21 and a second drive wiring 22.
  • the first drive wiring 21 and the second drive wiring 22 are arranged apart from each other on the first insulating main surface 10As.
  • the first drive wiring 21 is arranged near the insulating side surface 11A in the y direction and near the insulating side surface 14A in the x direction of the first insulating main surface 10As.
  • the shape of the first driving conductive layer 20A viewed from the z direction is a rectangular shape in which the x direction is the long side direction and the y direction is the short side direction.
  • the first input terminal 81 is connected to the first drive wiring 21. More specifically, a first conductive bonding material (not shown) such as solder or Ag paste is formed on the first drive wiring 21. A conductive connection layer (not shown) is mounted on the first conductive bonding material. A second conductive bonding material (not shown) such as solder or Ag paste is formed on the connecting layer. The first input terminal 81 is mounted on the second conductive joint material. In this way, the first input terminal 81 is electrically connected to the first driving conductive layer 20A via each conductive bonding material and connecting layer.
  • the connecting layer is made of, for example, a metal material, and in the present embodiment, is made of Cu.
  • An example of the connecting layer is formed in a columnar shape.
  • the connecting layer is, for example, a quadrangular prism.
  • the shape of the connecting layer is not limited to this, and may be a polygonal prism other than a square prism such as a cylinder or a triangular prism.
  • a plurality of first semiconductor elements 50A are mounted on the first drive wiring 21.
  • the plurality of first semiconductor elements 50A are arranged at the same position in the y direction and separated from each other in the x direction.
  • the maximum value of the deviation amount of the plurality of first semiconductor elements 50A in the y direction is within 10% of the dimension of the first semiconductor element 50A in the y direction, the plurality of first semiconductor elements 50A are in the y direction. It can be said that they are in the same position as each other.
  • each first semiconductor element 50A is arranged at the center of the first drive wiring 21 in the y direction.
  • the arrangement position of each first semiconductor element 50A in the first drive wiring 21 can be arbitrarily changed.
  • each first semiconductor element 50A may be arranged closer to the insulating side surface 12A than the center of the first drive wiring 21 in the y direction.
  • Each first semiconductor element 50A is a switching element, for example, Si (silicon), SiC (silicon carbide), GaN (gallium nitride), GaAs (gallium arsenide), or Ga 2 O 3 (gallium oxide).
  • a transistor consisting of such as is used.
  • each first semiconductor element 50A is made of SiC, it is suitable for speeding up switching.
  • each first semiconductor element 50A uses an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) made of SiC.
  • the first semiconductor element 50A is not limited to MOSFETs, and is a transistor such as a field effect transistor including a MISFET (Metal-Insulator-Semiconductor FET) or a bipolar transistor including an IGBT (Insulated Gate Bipolar Transistor). May be good.
  • Each first semiconductor element 50A may be a P-channel MOSFET instead of the N-channel MOSFET.
  • the first semiconductor element 50A is arranged closer to the first insulating member 10A than the second semiconductor element 50B in the z direction.
  • the first semiconductor element 50A is arranged between the first insulating member 10A and the second insulating member 10B in the z direction closer to the first insulating member 10A than the second insulating member 10B.
  • the first semiconductor element 50A has a first element main surface 50As and a first element back surface 50Ar facing opposite sides in the z direction.
  • the first element main surface 50As faces the same side as the first insulating main surface 10As. In other words, the first element main surface 50As faces the same side as the second resin main surface 75B.
  • the back surface 50Ar of the first element faces the same side as the back surface 10Ar of the first insulation. In other words, the back surface 50Ar of the first element faces the same side as the main surface 75A of the first resin.
  • a drain electrode 51A which is an example of the first back surface side drive electrode, is formed on the first insulating back surface 10Ar.
  • a source electrode 52A and a gate electrode 53A which are examples of the first main surface side drive electrode, are formed on the first element main surface 50As.
  • the back surface 50Ar of the first element of each first semiconductor element 50A is bonded to the first driving conductive layer 20A by a conductive bonding material JA such as solder or Ag paste. As a result, the drain electrode 51A of each first semiconductor element 50A is electrically connected to the first driving conductive layer 20A.
  • the second drive wiring 22 is formed so as to surround the first drive wiring 21 from the vicinity of the insulating side surface 13A and the vicinity of the insulating side surface 12A.
  • the shape of the second drive wiring 22 as viewed from the z direction is L-shaped.
  • the second drive wiring 22 has a main wiring portion 22a extending in the x direction and a connection wiring portion 22b extending in the y direction from the main wiring portion 22a.
  • the main wiring portion 22a and the connection wiring portion 22b are a single member integrally formed.
  • the main wiring portion 22a is arranged closer to the insulating side surface 12A than the first drive wiring 21 in the y direction.
  • the shape of the main wiring portion 22a viewed from the z direction is a rectangular shape in which the x direction is the long side direction and the y direction is the short side direction.
  • the main wiring portion 22a has a portion that overlaps with the first drive wiring 21 when viewed from the y direction.
  • the main wiring portion 22a and the first drive wiring 21 are displaced from each other in the x direction. More specifically, the main wiring portion 22a has a portion protruding closer to the insulating side surface 13A than the first drive wiring 21 in the x direction.
  • the first drive wiring 21 has a portion protruding closer to the insulating side surface 14A than the main wiring portion 22a in the x direction.
  • connection wiring portion 22b extends from both ends of the main wiring portion 22a in the x direction near the insulating side surface 13A toward the insulating side surface 11A.
  • the shape of the connection wiring portion 22b viewed from the z direction is a rectangular shape in which the y direction is the long side direction and the x direction is the short side direction.
  • the connection wiring portion 22b is arranged closer to the insulating side surface 14A than the first drive wiring 21, and is arranged so as to overlap the first drive wiring 21 when viewed from the x direction.
  • the second input terminal 82 is connected to the connection wiring portion 22b.
  • the connection structure between the connection wiring portion 22b and the second input terminal 82 is the same as the connection structure between the first drive conductive layer 20A and the first input terminal 81.
  • the control conductive layer 40A has a control wiring 41A and a detection wiring 42A.
  • the control wiring 41A and the detection wiring 42A are arranged apart from each other on the first insulating main surface 10As.
  • the control wiring 41A and the detection wiring 42A are formed so as to surround the main wiring portion 22a of the second drive wiring 22 from the insulating side surface 11A, the insulating side surface 14A, and the insulating side surface 12A, respectively.
  • the shape of each of the control wiring 41A and the detection wiring 42A when viewed from the z direction is substantially U-shaped.
  • the detection wiring 42A is arranged closer to the main wiring portion 22a of the second drive wiring 22 than the control wiring 41A.
  • the control wiring 41A is formed so as to surround the detection wiring 42A from the insulating side surface 11A, the insulating side surface 14A, and the insulating side surface 12A.
  • the first control terminal 84A is connected to the control wiring 41A.
  • the first detection terminal 85A is connected to the detection wiring 42A.
  • the joint structure between the control wiring 41A and the first control terminal 84A and the joint structure between the detection wiring 42A and the first detection terminal 85A are the first drive conductive layer 20A and the first, respectively. 1
  • the connection structure with the input terminal 81 is the same.
  • the first control terminal 84A is arranged closer to the insulating side surface 14A than the first detection terminal 85A.
  • the arrangement positions of the first control terminal 84A and the first detection terminal 85A as viewed from the z direction can be arbitrarily changed.
  • the first detection terminal 85A may be arranged closer to the insulating side surface 14A than the first control terminal 84A when viewed from the z direction.
  • the first semiconductor unit 1A includes a wire W1 connecting the source electrode 52A of each first semiconductor element 50A and the detection wiring 42A, a gate electrode 53A of each first semiconductor element 50A, and control. It has a wire W2 for connecting to the wiring 41A.
  • the wires W1 and W2 are each made of, for example, Au (gold).
  • the wires W1 and W2 may be made of Cu or Al (aluminum), respectively.
  • the source electrode 52A of each first semiconductor element 50A and the detection wiring 42A are electrically connected via the wire W2.
  • the gate electrode 53A of each first semiconductor element 50A and the control wiring 41A are electrically connected via the wire W1.
  • the second semiconductor unit 1B includes a second insulating member 10B, a second driving conductive layer 20B, a control conductive layer 40B, and a plurality of (four in this embodiment) second semiconductor elements 50B. And a second connecting layer 60B is provided.
  • the second semiconductor unit 1B is arranged at both ends of the sealing resin 70 in the z direction, whichever is closer to the second resin main surface 75B. That is, the second semiconductor unit 1B is arranged at a position far from the cooler 200.
  • the second insulating member 10B is a substrate having electrical insulation and formed in a flat plate shape with the z direction as the thickness direction.
  • the second insulating member 10B is arranged so as to face the first insulating member 10A in the z direction while being separated from the first insulating member 10A in the z direction.
  • the shape of the second insulating member 10B when viewed from the z direction is rectangular.
  • the second insulating member 10B has a second insulating main surface 10Bs and a second insulating back surface 10Br facing opposite sides in the z direction.
  • the second insulating back surface 10Br faces the side opposite to the cooler 200 in the z direction.
  • the second insulating back surface 10Br faces the same side as the second resin main surface 75B of the sealing resin 70.
  • the second insulating back surface 10Br of the second insulating member 10B of the second semiconductor unit 1B is exposed in the z direction from the second resin main surface 75B of the sealing resin 70.
  • the second insulating back surface 10Br is flush with the second resin main surface 75B.
  • the second insulating main surface 10Bs faces the cooler 200 in the z direction. That is, the second insulating main surface 10Bs faces the same side as the first resin main surface 75A of the sealing resin 70. Further, it can be said that the second insulating main surface 10Bs is arranged so as to face the first insulating main surface 10As of the first insulating member 10A in the z direction.
  • the position of the second insulating back surface 10Br with respect to the second resin main surface 75B in the z direction can be arbitrarily changed.
  • the second insulating back surface 10Br may be provided so as to project from the second resin main surface 75B in the z direction.
  • the second insulating member 10B has insulating side surfaces 11B to 14B.
  • the insulating side surface 11B and the insulating side surface 12B face each other in the y direction. When viewed from the z direction, the insulating side surfaces 11B and 12B each extend in the x direction.
  • the insulating side surface 11B faces the same side as the resin side surface 71 of the sealing resin 70, and the insulating side surface 12B faces the same side as the resin side surface 72 of the sealing resin 70. Therefore, the insulating side surface 11B faces the same side as the insulating side surface 11A of the first insulating member 10A, and the insulating side surface 12B faces the same side as the insulating side surface 12A of the first insulating member 10A.
  • the insulating side surface 13B and the insulating side surface 14B face each other in the x direction. When viewed from the z direction, the insulating side surfaces 13B and 14B each extend in the y direction.
  • the insulating side surface 13B faces the same side as the resin side surface 73 of the sealing resin 70, and the insulating side surface 14B faces the same side as the resin side surface 74 of the sealing resin 70. Therefore, the insulating side surface 13B faces the same side as the insulating side surface 13A of the first insulating member 10A, and the insulating side surface 14B faces the same side as the insulating side surface 14A of the first insulating member 10A.
  • the second driving conductive layer 20B and the controlling conductive layer 40B are each formed on the second insulating main surface 10Bs of the second insulating member 10B.
  • Each of the conductive layers 20B and 40B is made of, for example, Cu.
  • the second driving conductive layer 20B and the controlling conductive layer 40B are arranged apart from each other on the second insulating main surface 10Bs.
  • the second driving conductive layer 20B is arranged closer to the insulating side surface 11B in the y direction of the second insulating main surface 10Bs of the second insulating member 10B.
  • the second driving conductive layer 20B is formed over most of the second insulating main surface 10Bs.
  • the shape of the second driving conductive layer 20B viewed from the z direction is rectangular.
  • the output terminal 83 is connected to the second drive conductive layer 20B.
  • the connection structure between the second drive conductive layer 20B and the output terminal 83 is the same as the connection structure between the first drive conductive layer 20A and the first input terminal 81. That is, as shown in FIG. 8, a first conductive bonding material JE1 such as solder or Ag paste is formed on the second driving conductive layer 20B.
  • a conductive connecting layer 30 is mounted on the first conductive bonding material JE1.
  • a second conductive bonding material JE2 such as solder or Ag paste is formed on the connecting layer 30.
  • An output terminal 83 is mounted on the second conductive bonding material JE2.
  • the output terminal 83 is electrically connected to the second driving conductive layer 20B via the conductive bonding materials JE1 and JE2 and the connecting layer 30.
  • the connection layer 30 is made of, for example, a metal material, and in the present embodiment, is made of Cu.
  • An example of the connecting layer 30 is formed in a columnar shape.
  • the connecting layer 30 is, for example, a quadrangular prism.
  • the shape of the connecting layer 30 is not limited to this, and may be a polygonal prism other than a square prism such as a cylinder or a triangular prism.
  • each of the second semiconductor elements 50B is arranged closer to the insulating side surface 12B and closer to the insulating side surface 13B of the second driving conductive layer 20B. Specifically, each of the second semiconductor elements 50B is arranged in a region R of the second drive conductive layer 20B facing the main wiring portion 22a of the second drive wiring 22 of the first semiconductor unit 1A in the z direction. There is.
  • the plurality of second semiconductor elements 50B are arranged at the same position in the y direction and separated from each other in the x direction.
  • the maximum value of the deviation amount in the y direction of the plurality of second semiconductor elements 50B is within 10% of the dimension of the second semiconductor element 50B in the y direction
  • the plurality of second semiconductor elements 50B are in the y direction. It can be said that they are in the same position as each other.
  • the second semiconductor element 50B is arranged apart from the first semiconductor element 50A in the y direction. When viewed from the z direction, the plurality of first semiconductor elements 50A and the plurality of second semiconductor elements 50B are displaced from each other in the x direction.
  • the plurality of first semiconductor elements 50A are arranged so as to be offset from the resin side surface 74 with respect to the plurality of second semiconductor elements 50B. When viewed from the y direction, each of the first semiconductor elements 50A and each of the second semiconductor elements 50B are arranged so as to partially overlap each other.
  • each second semiconductor element 50B for example, a transistor made of Si, SiC, GaN, GaAs, Ga 2 O 3, or the like is used.
  • each second semiconductor element 50B is made of SiC, it is suitable for speeding up switching.
  • each second semiconductor element 50B uses an N-channel MOSFET made of SiC.
  • the second semiconductor element 50B is not limited to the MOSFET, and may be a transistor such as a field effect transistor including a MISFET or a bipolar transistor including an IGBT.
  • Each second semiconductor element 50B may be a P-channel MOSFET instead of the N-channel MOSFET.
  • the second semiconductor element 50B is arranged closer to the second insulating member 10B than the first semiconductor element 50A in the z direction.
  • the second semiconductor element 50B is arranged between the first insulating member 10A and the second insulating member 10B in the z direction closer to the second insulating member 10B than the first insulating member 10A.
  • the second semiconductor element 50B has a second element main surface 50Bs and a second element back surface 50Br facing opposite sides in the z direction.
  • the second element main surface 50Bs faces the same side as the second insulating main surface 10Bs. In other words, the second element main surface 50Bs faces the same side as the first resin main surface 75A.
  • the back surface 50Br of the second element faces the same side as the back surface 10Br of the second insulation. In other words, the back surface 50Br of the second element faces the same side as the main surface 75B of the second resin.
  • the arrangement direction of the second semiconductor element 50B in the z direction is opposite to the arrangement direction of the first semiconductor element 50A.
  • a drain electrode 51B which is an example of a second back surface side drive electrode, is formed on the second insulating back surface 10Br.
  • a source electrode 52B and a gate electrode 53B which are examples of the second main surface side drive electrode, are formed on the second element main surface 50Bs.
  • each second semiconductor element 50B is bonded to the second drive conductive layer 20B by a conductive bonding material JB such as solder or Ag paste.
  • a conductive bonding material JB such as solder or Ag paste.
  • the control conductive layer 40B is arranged between the second driving conductive layer 20B and the insulating side surface 12B in the y direction of the second insulating main surface 10Bs of the second insulating member 10B.
  • the control conductive layer 40B has a control wiring 41B and a detection wiring 42B.
  • the shapes of the control wiring 41B and the detection wiring 42B viewed from the z direction are strips extending in the x direction, respectively.
  • the control wiring 41B and the detection wiring 42B are arranged at the same position in the x direction and separated from each other in the y direction.
  • the control wiring 41B is arranged closer to the second drive conductive layer 20B than the detection wiring 42B.
  • the second control terminal 84B is connected to the control wiring 41B.
  • a second detection terminal 85B is connected to the detection wiring 42B.
  • the joint structure between the control wiring 41B and the second control terminal 84B and the joint structure between the detection wiring 42B and the second detection terminal 85B are the first drive conductive layer 20A and the second, respectively. 1
  • the connection structure with the input terminal 81 is the same.
  • the second detection terminal 85B is arranged closer to the insulating side surface 13A than the second control terminal 84B.
  • the arrangement positions of the second control terminal 84B and the second detection terminal 85B can be arbitrarily changed when viewed from the z direction.
  • the second control terminal 84B may be arranged closer to the insulating side surface 13A than the second detection terminal 85B when viewed from the z direction.
  • the second semiconductor unit 1B includes a wire W3 that connects the source electrode 52B of each second semiconductor element 50B and the detection wiring 42B, a gate electrode 53B of each second semiconductor element 50B, and a control. It has a wire W4 for connecting to the wiring 41B.
  • the wires W3 and W4 are each made of, for example, Au.
  • the wires W3 and W4 may be made of Cu or Al, respectively.
  • the source electrode 52B of each second semiconductor element 50B and the detection wiring 42B are electrically connected.
  • the gate electrode 53B of each second semiconductor element 50B and the control wiring 41B are electrically connected.
  • the source electrodes 52A of the plurality of first semiconductor elements 50A are electrically connected to the second driving conductive layer 20B of the second semiconductor unit 1B, respectively. More specifically, a first conductive bonding material JA1 such as solder or Ag paste is arranged on the source electrode 52A. A conductive first connecting layer 60A is placed on the first conductive bonding material JA1. A second conductive bonding material JA2 such as solder or Ag paste is arranged at a portion of the second drive wiring 22 facing the first connection layer 60A in the z direction. The second conductive bonding material JA2 is in contact with the first connecting layer 60A.
  • a first conductive bonding material JA1 such as solder or Ag paste is arranged on the source electrode 52A.
  • a conductive first connecting layer 60A is placed on the first conductive bonding material JA1.
  • a second conductive bonding material JA2 such as solder or Ag paste is arranged at a portion of the second drive wiring 22 facing the first connection layer 60A in the z direction. The
  • the first connecting layer 60A is joined to the source electrode 52A and the second driving conductive layer 20B by the conductive bonding materials JA1 and JA2.
  • the source electrode 52A and the second driving conductive layer 20B are electrically connected to each other via the conductive bonding materials JA1 and JA2 and the first connecting layer 60A.
  • the first connection layer 60A is made of, for example, a metal material, and in this embodiment, it is made of Cu.
  • An example of the first connection layer 60A is formed in a columnar shape.
  • the first connecting layer 60A is, for example, a quadrangular prism.
  • the shape of the first connecting layer 60A is not limited to this, and may be a polygonal prism other than a square prism such as a cylinder or a triangular prism.
  • the thickness of the first connection layer 60A (the dimension of the first connection layer 60A in the z direction) is the thickness of the first semiconductor element 50A (the z direction of the first semiconductor element 50A). Dimension) thicker than.
  • the source electrodes 52B of the plurality of second semiconductor elements 50B are electrically connected to the second drive wiring 22 of the first drive conductive layer 20A of the first semiconductor unit 1A, respectively. More specifically, a first conductive bonding material JB1 such as solder or Ag paste is arranged on the source electrode 52B. A conductive second connecting layer 60B is placed on the first conductive bonding material JB1. A second conductive bonding material JB2 such as solder or Ag paste is arranged at a portion of the second drive wiring 22 facing the second connection layer 60B in the z direction. The second conductive bonding material JB2 is in contact with the second connecting layer 60B.
  • a first conductive bonding material JB1 such as solder or Ag paste is arranged on the source electrode 52B.
  • a conductive second connecting layer 60B is placed on the first conductive bonding material JB1.
  • a second conductive bonding material JB2 such as solder or Ag paste is arranged at a portion of the second drive wiring 22 facing the second connection layer 60B in
  • the second connection layer 60B is joined to the source electrode 52B and the second drive wiring 22 by the conductive bonding materials JB1 and JB2. In this way, the source electrode 52B and the second drive wiring 22 are electrically connected via the conductive bonding materials JB1 and JB2 and the second connecting layer 60B.
  • the second connection layer 60B is made of, for example, a metal material, and is made of Cu in this embodiment.
  • An example of the second connecting layer 60B is formed in a columnar shape.
  • the second connecting layer 60B is, for example, a quadrangular prism.
  • the shape of the second connecting layer 60B is not limited to this, and may be a polygonal prism other than a square prism such as a cylinder or a triangular prism.
  • the thickness of the second connection layer 60B (the dimension of the second connection layer 60B in the z direction) is the thickness of the second semiconductor element 50B (the z direction of the second semiconductor element 50B). Dimension) thicker than.
  • the thickness of the first connection layer 60A and the thickness of the second connection layer 60B can be changed arbitrarily. In one example, the thickness of the first connection layer 60A may be less than or equal to the thickness of the first semiconductor element 50A. The thickness of the second connection layer 60B may be less than or equal to the thickness of the second semiconductor element 50B.
  • the circuit configuration of the semiconductor device 1 having such a configuration is a half-bridge type in which four first semiconductor elements 50A connected in parallel to each other and four second semiconductor elements 50B connected in parallel to each other are connected in series.
  • Inverter circuit FIG. 9 shows an example of the inverter circuit of the semiconductor device 1.
  • four first semiconductor elements 50A connected in parallel to each other are shown as one first semiconductor element 50A
  • four second semiconductor elements 50B connected in parallel to each other are shown as one second semiconductor element. It is shown as 50B.
  • the drain electrode 51A of the first semiconductor element 50A is electrically connected to the first input terminal 81.
  • the source electrode 52A of the first semiconductor element 50A is electrically connected to the drain electrode 51B of the second semiconductor element 50B.
  • An output terminal 83 is connected to the node N of the source electrode 52A of the first semiconductor element 50A and the drain electrode 51B of the second semiconductor element 50B.
  • the source electrode 52B of the second semiconductor element 50B is electrically connected to the second input terminal 82.
  • the gate electrode 53A of the first semiconductor element 50A is connected to the first control terminal 84A.
  • the gate electrode 53B of the second semiconductor element 50B is connected to the second control terminal 84B.
  • the first detection terminal 85A is connected to the node NA between the source electrode 52A and the node N of the first semiconductor element 50A.
  • a second detection terminal 85B is connected to the node NB between the source electrode 52B of the second semiconductor element 50B and the second input terminal 82.
  • the semiconductor device 1 includes a connecting member 90 that connects the first driving conductive layer 20A and the second driving conductive layer 20B.
  • the connecting member 90 is joined to each of the first driving conductive layer 20A and the second driving conductive layer 20B by, for example, an adhesive (not shown).
  • the thermal conductivity of the connecting member 90 is higher than the thermal conductivity of the sealing resin 70. Further, the thermal conductivity of the connecting member 90 is higher than the thermal conductivity of air.
  • the thermal conductivity of the connecting member 90 is preferably 10 W / mK or more.
  • the connecting member 90 is made of a material having electrical insulation, and is made of a material having excellent heat dissipation such as Si or ceramics such as alumina and aluminum nitride. In this embodiment, the connecting member 90 is made of ceramics.
  • the connecting member 90 is a member for assisting heat dissipation of the semiconductor element (in this embodiment, each second semiconductor element 50B of the second semiconductor unit 1B) of the semiconductor unit to which the cooler 200 is not attached. In the present embodiment, the connecting member 90 forms a heat transfer path between the second drive wiring 22 of the first drive conductive layer 20A and the second drive conductive layer 20B.
  • the connecting member 90 is arranged on the side opposite to the control conductive layer 40B with respect to the second semiconductor element 50B in the y direction.
  • the connecting member 90 is arranged between the first semiconductor element 50A and the second semiconductor element 50B in the y direction. More specifically, the connecting member 90 is arranged closer to the second semiconductor element 50B than the first semiconductor element 50A in the y direction.
  • the connecting member 90 is arranged at a position adjacent to the second semiconductor element 50B in the y direction. As shown in FIG. 7, the connecting member 90 is arranged in the region R.
  • the connecting member 90 extends in the x direction so as to face all the second semiconductor elements 50B in the y direction. That is, the connecting member 90 is arranged so as to be adjacent to all the second semiconductor elements 50B in the y direction.
  • the shape of the connecting member 90 when viewed from the z direction is a rectangular shape in which the x direction is the long side direction and the y direction is the short side direction.
  • the size of the connecting member 90 in the y direction is smaller than the size of the second semiconductor element 50B in the y direction.
  • the connecting member 90 of the present embodiment is composed of a flat plate-shaped block having the y direction as the thickness direction.
  • FIG. 10 shows the cross-sectional structure of the semiconductor device 1X of the comparative example.
  • the semiconductor device 1X of the comparative example has a configuration in which the connecting member 90 is omitted from the semiconductor device 1 of the present embodiment. Therefore, in the semiconductor device 1X of the comparative example, the components common to the semiconductor device 1 are designated by the same reference numerals, and the description thereof will be omitted.
  • each of the first semiconductor element 50A and each second semiconductor element 50B When each of the first semiconductor element 50A and each second semiconductor element 50B is driven in the semiconductor device 1X, each of the first semiconductor element 50A and each second semiconductor element 50B generates heat. Since the cooler 200 is attached to the first insulating member 10A of the first semiconductor unit 1A, the heat of each first semiconductor element 50A is as shown by the arrow YX1 in FIG. It moves to the cooler 200 via the first drive wiring 21 of the drive conductive layer 20A and the first insulating member 10A. Further, since the cooler 200 is not attached to the second insulating member 10B of the second semiconductor unit 1B, the heat of each second semiconductor element 50B is the heat of the first conductive bonding material JB1 as shown by the arrow YX2 in FIG.
  • the second connecting layer 60B, the second conductive bonding material JB2, the second driving wiring 22 of the first driving conductive layer 20A, and the first insulating member 10A move to the cooler 200.
  • the thermal resistance from each of the second semiconductor elements 50B to the cooler 200 is higher than the thermal resistance from each of the first semiconductor elements 50A to the cooler 200.
  • each of the second semiconductor elements 50B is less likely to dissipate heat than each of the first semiconductor elements 50A, and tends to have a higher temperature than each of the first semiconductor elements 50A.
  • the heat of each of the first semiconductor elements 50A is conductively bonded as shown by the arrow Y1 in FIG. It moves to the cooler 200 via the material JA, the first drive wiring 21 of the first drive conductive layer 20A, and the first insulating member 10A.
  • each second semiconductor element 50B is transferred to the cooler 200 via the two heat transfer paths. More specifically, as shown by the arrow Y2 in FIG. 8, the heat of each second semiconductor element 50B is the first conductive bonding material JB1, the second connecting layer 60B, the second conductive bonding material JB2, and the first driving conductive material. It moves to the cooler 200 via the second drive wiring 22 of the layer 20A and the first insulating member 10A. Further, as shown by the arrow Y3 in FIG. 8, the heat of each second semiconductor element 50B is transferred to the conductive bonding material JB, the second drive conductive layer 20B, the connecting member 90, the second drive wiring 22 of the first drive conductive layer 20A, and the like.
  • each second semiconductor element 50B It moves to the cooler 200 via the first insulating member 10A.
  • the cooler is transferred from each second semiconductor element 50B. It is possible to suppress an increase in the difference between the thermal resistance up to 200 and the thermal resistance from each first semiconductor element 50A to the cooler 200.
  • each of the second semiconductor elements 50B has the same heat dissipation performance as each of the first semiconductor elements 50A, and it is possible to suppress that the temperature tends to be higher than that of each of the first semiconductor elements 50A.
  • the semiconductor device 1 seals a connecting member 90 connecting the first driving conductive layer 20A and the second driving conductive layer 20B, and the first semiconductor element 50A, the second semiconductor element 50B, and the connecting member 90.
  • the sealing resin 70 and the sealing resin 70 are provided.
  • the connecting member 90 forms a heat transfer path from each second semiconductor element 50B to the cooler 200.
  • the thermal conductivity of the connecting member 90 is higher than the thermal conductivity of the sealing resin 70. According to this configuration, the heat transfer path between the second semiconductor element 50B and the cooler 200, which is farther from the cooler 200 than the first semiconductor element 50A, can be increased, so that the first semiconductor element 50A in the semiconductor device 1 is cooled.
  • the connecting member 90 is connected to the second driving conductive layer 20B. According to this configuration, the heat of the second semiconductor element 50B is transferred from the second driving conductive layer 20B to the connecting member 90, so that the heat transfer path is shortened. Therefore, the heat of the second semiconductor element 50B is easily transferred to the connecting member 90.
  • the connecting member 90 When viewed from the z direction, the connecting member 90 is arranged closer to the second semiconductor element 50B than to the first semiconductor element 50A. According to this configuration, the heat of the second semiconductor element 50B is more likely to be transferred to the connecting member 90 than the heat of the first semiconductor element 50A, so that the temperature of the second semiconductor element 50B is likely to be higher than that of the first semiconductor element 50A. It can be suppressed.
  • a source electrode 52B is formed on the second element main surface 50Bs of the second semiconductor element 50B, and is connected to the second drive wiring 22 of the first drive conductive layer 20A via the second connection layer 60B. There is. According to this configuration, the heat of the second semiconductor element 50B is transferred to the cooler 200 via the second connection layer 60B, the second drive wiring 22, and the first insulating member 10A. Therefore, it is possible to prevent the temperature of the second semiconductor element 50B from becoming excessively high.
  • a source electrode 52A is formed on the first element main surface 50As of the first semiconductor element 50A, and is connected to the second drive conductive layer 20B via the first connection layer 60A. According to this configuration, the heat of the first semiconductor element 50A is transferred to the first connecting layer 60A, the second driving conductive layer 20B, and the second insulating member 10B, so that the temperature of the first semiconductor element 50A becomes excessively high. Can be suppressed.
  • the connecting member 90 When viewed from the y direction, the connecting member 90 is arranged so as to overlap all of the plurality of second semiconductor elements 50B. According to this configuration, since the heat of the plurality of second semiconductor elements 50B is transferred to the connecting member 90, the temperature variation of the plurality of second semiconductor elements 50B can be suppressed.
  • the connecting member 90 is arranged so that all of the plurality of second semiconductor elements 50B are adjacent to each other in the y direction. According to this configuration, the heat of the plurality of second semiconductor elements 50B can be easily transferred to the connecting member 90, respectively. Therefore, it is possible to prevent the temperatures of the plurality of second semiconductor elements 50B from becoming excessively high.
  • the connecting member 90 is arranged on the side opposite to the control conductive layer 40B. According to this configuration, since it is not necessary to form the wires W3 and W4 so as to avoid the connecting member 90, the wires W3 and W4 can be easily formed and the lengths of the wires W3 and W4 can be shortened. ..
  • the first insulating member 10A and the second insulating member 10B are each made of ceramics. According to this configuration, the heat of each of the first semiconductor elements 50A and each of the second semiconductor elements 50B is easily transferred from the first insulating member 10A to the cooler 200. Further, the heat of each of the first semiconductor elements 50A and each of the second semiconductor elements 50B can be easily dissipated to the outside through the second insulating member 10B.
  • the first input terminal 81, the second input terminal 82, and the output terminal 83 each project from the resin side surface 74 of the sealing resin 70. According to this configuration, when the semiconductor device 1 is mounted on a mounting board and, for example, a snubber capacitor is provided on the mounting board, wiring for connecting the semiconductor device 1 and the snubber capacitor can be easily formed.
  • the size of the connecting member 90 in the y direction is smaller than the size of the second semiconductor element 50B in the y direction. According to this configuration, it is possible to suppress an increase in the size of the second drive wiring 22 of the first drive conductive layer 20A in the y direction, so that it is possible to suppress an increase in the size of the semiconductor device 1 in the y direction.
  • the above-described embodiment is an example of possible embodiments of the semiconductor device according to the present disclosure, and is not intended to limit the embodiments.
  • the semiconductor device according to the present disclosure may take a form different from the form exemplified in the above embodiment.
  • An example thereof is a form in which a part of the configuration of the above embodiment is replaced, changed, or omitted, or a new configuration is added to the above embodiment.
  • the following modification examples can be combined with each other as long as they are not technically inconsistent.
  • the parts common to the above-described embodiment are designated by the same reference numerals as those in the above-described embodiment, and the description thereof will be omitted.
  • the size of the sealing resin 70 in the x direction and the size in the y direction can be arbitrarily changed.
  • the sealing resin 70 may be formed so that the insulating side surfaces 11A to 14A of the first insulating member 10A are exposed.
  • the sealing resin 70 may be formed so that the insulating side surfaces 11B to 14B of the second insulating member 10B are exposed.
  • At least one of the adhesive between the connecting member 90 and the first driving conductive layer 20A and the adhesive between the connecting member 90 and the second driving conductive layer 20B may be omitted. ..
  • the adhesive between the connecting member 90 and the first driving conductive layer 20A is omitted, the connecting member 90 and the first driving conductive layer 20A are in contact with each other.
  • the adhesive between the connecting member 90 and the second driving conductive layer 20B is omitted, the connecting member 90 and the second driving conductive layer 20B are in contact with each other.
  • the dimensions of the connecting member 90 in the y direction can be arbitrarily changed.
  • the dimension of the connecting member 90 in the y direction may be larger than the dimension of the connecting member 90 of the above embodiment in the y direction.
  • each of the second semiconductor elements 50B is arranged at both ends of the second driving conductive layer 20B in the y direction, whichever is closer to the insulating side surface 12B.
  • the space in which the connecting member 90 can be arranged can be expanded in the y direction in the area R (see FIG. 7).
  • the connecting member 90 is contained in the region R.
  • the length of the connecting member 90 in the x direction can be arbitrarily changed.
  • the length of the connecting member 90 in the x direction may be such that it faces a part of the second semiconductor elements 50B among the plurality of second semiconductor elements 50B in the y direction.
  • the shape of the connecting member 90 viewed from the z direction can be arbitrarily changed.
  • the shape of the connecting member 90 as viewed from the z direction may be changed as follows (A) to (C), for example.
  • the connecting member 90 is attached to each of the main facing wall 91 facing all the second semiconductor elements 50B in the y direction and the second semiconductor elements 50B arranged at both ends in the x direction. It has an end facing wall 92 that faces in the x direction.
  • the connecting member 90 is a single component in which the main facing wall 91 and the end facing wall 92 are integrally formed.
  • the main facing wall 91 is arranged at a position adjacent to the second semiconductor element 50B in the y direction, and extends along the x direction.
  • the end facing wall 92 extends along the y direction from both ends of the main facing wall 91 in the x direction.
  • the end facing walls 92 are arranged at positions adjacent to each of the second semiconductor elements 50B arranged at both ends in the x direction in the x direction.
  • the end facing wall 92 is provided so as to overlap all of the second semiconductor elements 50B when viewed from the x direction.
  • each second semiconductor element 50B is driven by increasing the volume of the connecting member 90 as compared with the connecting member 90 in which the end facing wall 92 is omitted.
  • the heat of the semiconductor element 50B is easily transferred to the connecting member 90.
  • the connecting member 90 may be configured so that the main facing wall 91 and at least one of the two end facing walls 92 are separated from each other.
  • the connecting member 90 is arranged between the main facing wall 91 facing all the second semiconductor elements 50B in the y direction and the second semiconductor elements 50B adjacent to each other in the x direction. It has a plurality of (three in the illustrated example) intermediate facing walls 93.
  • the connecting member 90 is a single component in which the main facing wall 91 and the intermediate facing wall 93 are integrally formed.
  • the main facing wall 91 is arranged at a position adjacent to the second semiconductor element 50B in the y direction, and extends along the x direction.
  • Each intermediate facing wall 93 extends from the main facing wall 91 along the y direction.
  • Each intermediate facing wall 93 faces the second semiconductor element 50B in the x direction.
  • Each intermediate facing wall 93 is provided so as to overlap all of the second semiconductor elements 50B when viewed from the x direction.
  • each second semiconductor element 50B is driven by increasing the volume of the connecting member 90 as compared with the connecting member 90 in which the intermediate facing wall 93 is omitted.
  • the heat of the element 50B is easily transferred to the connecting member 90.
  • the connecting member 90 may be configured so that the main facing wall 91 and at least one of the three intermediate facing walls 93 are separated from each other.
  • the connecting member 90 is attached to each of the main facing wall 91 facing all the second semiconductor elements 50B in the y direction and the second semiconductor elements 50B arranged at both ends in the x direction. It has an end facing wall 92 facing in the x direction and an intermediate facing wall 93 arranged between adjacent second semiconductor elements 50B in the x direction.
  • the connecting member 90 is a single component in which the main facing wall 91, the end facing wall 92, and the intermediate facing wall 93 are integrally formed.
  • the main facing wall 91 is arranged at a position adjacent to the second semiconductor element 50B in the y direction, and extends along the x direction.
  • the end facing wall 92 extends along the y direction from both ends of the main facing wall 91 in the x direction.
  • the end facing walls 92 are arranged at positions adjacent to each of the second semiconductor elements 50B arranged at both ends in the x direction in the x direction.
  • the end facing wall 92 is provided so as to overlap all of the second semiconductor elements 50B when viewed from the x direction.
  • Each intermediate facing wall 93 extends from the main facing wall 91 along the y direction.
  • Each intermediate facing wall 93 faces the second semiconductor element 50B in the x direction.
  • Each intermediate facing wall 93 is provided so as to overlap all of the second semiconductor elements 50B when viewed from the x direction.
  • each second semiconductor element 50B is driven by increasing the volume of the connecting member 90 as compared with the connecting member 90 in which at least one of the end facing wall 92 and the intermediate facing wall 93 is omitted. In this case, the heat of each second semiconductor element 50B is easily transferred to the connecting member 90.
  • the connecting member 90 may be configured so that the main facing wall 91 and at least one of the two end facing walls 92 are separated from each other. Further, the connecting member 90 may be configured so that the main facing wall 91 and at least one of the three intermediate facing walls 93 are separated from each other. Further, the connecting member 90 is configured such that the main facing wall 91, at least one of the two end facing walls 92, and at least one of the three intermediate facing walls 93 are separated from each other. May be done.
  • the length of the end facing wall 92 in the y direction can be arbitrarily changed.
  • the end facing wall 92 may be provided so as to overlap a part of the second semiconductor element 50B when viewed from the x direction. Further, the end facing wall 92 may be provided so as to protrude toward the insulating side surface 12B from the second semiconductor element 50B in the y direction when viewed from the z direction.
  • the length of the intermediate facing wall 93 in the y direction can be arbitrarily changed.
  • the intermediate facing wall 93 may be provided so as to overlap a part of the second semiconductor element 50B when viewed from the x direction.
  • the intermediate facing wall 93 may be provided so as to protrude from the second semiconductor element 50B toward the insulating side surface 12B in the y direction when viewed from the z direction.
  • a common connecting member 90 is provided for the plurality of second semiconductor elements 50B, but the present invention is not limited to this.
  • one connecting member 90 may be provided for each second semiconductor element 50B.
  • Each connecting member 90 is arranged so as to face the second semiconductor element 50B corresponding to the connecting member 90 in the y direction. More specifically, each connecting member 90 is arranged so as to be adjacent to the second semiconductor element 50B corresponding to the connecting member 90 in the y direction.
  • the connecting member 90 may be arranged between the second semiconductor elements 50B adjacent to each other in the x direction. Further, the connecting member 90 is arranged on the side opposite to the second semiconductor element 50B adjacent to the second semiconductor element 50B arranged at both ends in the x direction among the plurality of second semiconductor elements 50B in the x direction. May be good. That is, the connecting members 90 are arranged on both sides of the second semiconductor element 50B arranged at both ends in the x direction in the x direction. When viewed from the z direction, the connecting member 90 extends in the y direction. In the illustrated example, the connecting member 90 is provided so as to overlap the entire second semiconductor element 50B when viewed from the x direction.
  • each connecting member 90 may be provided so as to surround the second semiconductor element 50B from both sides in the x direction and from the y direction.
  • Each connecting member 90 may be provided so as to surround the second semiconductor element 50B from one of the x directions and the y direction.
  • the number of connecting members 90 can be arbitrarily changed.
  • one connecting member 90 may be provided for two second semiconductor elements 50B.
  • the connecting member 90 is provided so as to overlap the entire two second semiconductor elements 50B when viewed from the y direction.
  • the number of connecting members 90 can be arbitrarily changed.
  • the connecting members 90 at both ends in the x direction may be omitted.
  • the connecting member 90 is located between the two second semiconductor elements 50B near the insulating side surface 13B in the x direction and between the two second semiconductor elements 50B near the insulating side surface 14B in the x direction. It may be arranged in each.
  • the connecting member 90 is connected to each of the first driving conductive layer 20A and the second driving conductive layer 20B by an adhesive, but the present invention is not limited to this.
  • the connecting member 90 and the first driving conductive layer 20A are joined by a first conductive bonding material JC1 such as solder or Ag paste, and the connecting member 90 and the second driving conductive layer 20B are formed.
  • Solder, Ag paste or the like may be bonded by a second conductive bonding material JC2.
  • the thermal conductivity of each of the conductive bonding materials JC1 and JC2 is higher than the thermal conductivity of the adhesive.
  • the heat of the second semiconductor element 50B is the second driving conductive layer as compared with the configuration in which the connecting member 90, the first driving conductive layer 20A, and the second driving conductive layer 20B are connected by an adhesive. It becomes easy to move from 20B to the connecting member 90, and it becomes easy to move from the connecting member 90 to the first driving conductive layer 20A.
  • the connecting member 90 is composed of a flat plate-shaped block whose thickness direction is the y direction, but the present invention is not limited to this.
  • the connecting member 90 may be composed of a thin plate having a substantially S shape when viewed from the x direction.
  • the connecting member 90 is made of, for example, a spring material having electrical insulation.
  • the connecting member 90 may be made of a conductive spring material, and at least both ends of the connecting member 90 in the z direction may be covered with an insulating coating.
  • the connecting member 90 is in contact with the first driving conductive layer 20A and the second driving conductive layer 20B in a state of being compressed by the first driving conductive layer 20A and the second driving conductive layer 20B. That is, the ends of the connecting member 90 closer to the first driving conductive layer 20A among both ends in the z direction are urged toward the first driving conductive layer 20A. Of both ends of the connecting member 90 in the z direction, the end closer to the second driving conductive layer 20B is urged toward the second driving conductive layer 20B.
  • the connecting member 90 and the first driving conductive layer 20A and the second driving conductive layer 20B are surely in contact with each other, the heat of the second semiconductor element 50B is transferred from the second driving conductive layer 20B to the connecting member 90. It becomes easy to move, and it becomes easy to move from the connecting member 90 to the first driving conductive layer 20A.
  • the connecting member 90 may be composed of a plurality of spring probes.
  • the connecting member 90 is configured to be urged toward the first driving conductive layer 20A.
  • the connecting member 90 and the second driving conductive layer 20B are joined by a conductive bonding material JD such as solder or Ag paste. According to this configuration, since the connecting member 90 and the first driving conductive layer 20A are surely in contact with each other, the heat of the second semiconductor element 50B is easily transferred from the connecting member 90 to the first driving conductive layer 20A.
  • the connecting member 90 is made of a material having electrical insulation, but the present invention is not limited to this.
  • the connecting member 90 may be made of a metal material such as Cu or Al.
  • the adhesive that connects the connecting member 90 and the first driving conductive layer 20A and the adhesive that connects the connecting member 90 and the second driving conductive layer 20B are made of materials having electrical insulation. Become. As a result, the connecting member 90 and the first driving conductive layer 20A are insulated, and the connecting member 90 and the second driving conductive layer 20B are insulated.
  • the connecting member 90 may be connected to a drive wiring different from the second drive wiring 22.
  • the first drive conductive layer 20A may have a third drive wiring 23 as a drive wiring different from the second drive wiring 22.
  • the third drive wiring 23 is electrically insulated from the second drive wiring 22 and is formed so as to be adjacent to the second drive wiring 22 via a gap in the y direction.
  • the third drive wiring 23 extends in the x direction.
  • the third drive wiring 23 is arranged so as to be separated from the main wiring portion 22a of the second drive wiring 22 in the y direction and separated from the connection wiring portion 22b in the x direction.
  • the connecting member 90 may be made of a conductive material, for example, a metal material.
  • the connecting member 90 is connected to the first driving conductive layer 20A and the second driving conductive layer 20B, but the present invention is not limited to this.
  • the connecting member 90 may be connected to the first insulating main surface 10As of the first insulating member 10A instead of the first driving conductive layer 20A, or may be connected to the second insulating member 10B instead of the second driving conductive layer 20B. 2 It may be connected to the insulating main surface 10Bs.
  • the connecting member 90 is connected to the first insulating main surface 10As of the first insulating member 10A and is connected to the second insulating main surface 10Bs of the second insulating member 10B. ..
  • a through hole 24 is formed in a portion of the second driving conductive layer 20B where the connecting member 90 is arranged.
  • the through hole 24 penetrates the second driving conductive layer 20B in the z direction.
  • the connecting member 90 is inserted through the through hole 24 and connected to the second insulating main surface 10Bs of the second insulating member 10B.
  • the connecting member 90 may be connected so as to straddle the first insulating main surface 10As of the first driving conductive layer 20A and the first insulating member 10A, and the second driving conductive layer 20B and the second insulating member 10B may be connected. It may be connected so as to straddle the insulating main surface 10Bs.
  • the connecting member 90 includes at least one of the first insulating main surface 10As of the first driving conductive layer 20A and the first insulating member 10A, and the second of the second driving conductive layer 20B and the second insulating member 10B. It suffices to be connected to at least one of the insulating main surfaces 10Bs.
  • the connecting member 90 is connected to the first insulating main surface 10As of the first insulating member 10A or the second insulating main surface 10Bs of the second insulating member 10B, for example, the connecting member 90 is connected to a conductive material, for example, a metal material. It may be composed of.
  • each of the connecting layers 60A and 60B may be made of a conductive bonding material such as solder or Ag paste.
  • the first connecting layer connecting the first semiconductor element 50A and the second driving conductive layer 20B including the conductive bonding materials JA1 and JA2 formed at both ends of the first connecting layer 60A in the z direction.
  • the second semiconductor element 50B and the first drive conductive layer 20A include the conductive bonding materials JB1 and JB2 formed at both ends of the second connection layer 60B in the z direction. It constitutes a second connection layer to be connected.
  • the first control terminal 84A and the first detection terminal 85A may each project from the resin side surface 74 in the x direction. Further, the second control terminal 84B and the second detection terminal 85B may each project from the resin side surface 73 in the x direction.
  • the respective arrangement positions of the control wiring 41A and the detection wiring 42A can be arbitrarily changed.
  • the detection wiring 42A may be arranged closer to the main wiring portion 22a of the second drive wiring 22 than the control wiring 41A.
  • the shapes of the control wiring 41A and the detection wiring 42A viewed from the z direction can be arbitrarily changed.
  • the portion arranged between the second drive wiring 22 and the insulating side surface 12A in the y direction may be omitted.
  • the respective arrangement positions of the control wiring 41B and the detection wiring 42B can be arbitrarily changed.
  • the detection wiring 42B may be arranged closer to the second drive conductive layer 20B than the control wiring 41B.
  • the configuration of the second driving conductive layer 20B can be arbitrarily changed.
  • the second driving conductive layer 20B is divided into a first conductive portion to which each first semiconductor element 50A is connected and a second conductive portion to which each second semiconductor element 50B is connected. May be good.
  • the first conductive portion and the second conductive portion may be connected by a conductive connecting member.
  • the numbers of the first semiconductor element 50A and the second semiconductor element 50B can be arbitrarily changed.
  • the number of the first semiconductor element 50A and the number of the second semiconductor element 50B may be 1 to 3, or 5 or more, respectively, depending on the characteristics of the semiconductor device 1.
  • the first connection layer 60A and the second connection layer 60B may be omitted.
  • the first semiconductor element 50A is directly connected to the second driving conductive layer 20B.
  • the second semiconductor element 50B is directly connected to the second drive wiring 22 of the first drive conductive layer 20A.
  • the first semiconductor element 50A may be connected to the second driving conductive layer 20B via a conductive bonding material such as solder or Ag paste, or may be second driven in contact with the second driving conductive layer 20B. It may be connected to the conductive layer 20B.
  • the second semiconductor element 50B may be connected to the second drive wiring 22 of the first drive conductive layer 20A via a conductive bonding material such as solder or Ag paste, or may be in contact with the second drive wiring 22. It may be connected to the second drive wiring 22 in the state.
  • the bonding material JA between the first semiconductor element 50A and the first drive wiring 21 of the first drive conductive layer 20A may be omitted.
  • the first semiconductor element 50A is connected to the first drive wiring 21 in contact with the first drive wiring 21.
  • the bonding material JB between the second semiconductor element 50B and the second driving conductive layer 20B may be omitted.
  • the second semiconductor element 50B is connected to the second driving conductive layer 20B in contact with the second driving conductive layer 20B.
  • the first semiconductor element 50A is arranged closer to the first insulating member 10A than the second semiconductor element 50B, and the second semiconductor element 50B is closer to the second insulating member 10B than the first semiconductor element 50A. It was placed in, but it is not limited to this.
  • the first semiconductor element 50A and the second semiconductor element 50B may be arranged at the center between the first insulating member 10A and the second insulating member 10B in the z direction, respectively.
  • the joining materials JA, JB and the respective connections are used as a configuration in which the layers 60A and 60B are omitted, and a configuration in which the thickness of the first drive wiring 21 and the thickness of the second drive conductive layer 20B are increased.
  • the drain electrode 51A, the source electrode 52A, and the gate electrode 53A may be formed on the first element main surface 50As of the first semiconductor element 50A.
  • the drain electrode 51A is connected to the first drive wiring 21 of the first drive conductive layer 20A by a wire or a band-shaped connecting member.
  • the drain electrode 51B, the source electrode 52B and the gate electrode 53B may be formed on the second element main surface 50Bs of the second semiconductor element 50B.
  • the drain electrode 51B is connected to the second driving conductive layer 20B by a wire or a band-shaped connecting member.
  • each of the semiconductor elements 50A and 50B may be a semiconductor element other than a switching element such as a diode.
  • drain electrode (1st back surface side drive electrode) 52A Source electrode (first main surface side drive electrode) 50B ... Second semiconductor element 50Bs ... Second element main surface 50Br ... Second element back surface 51B ... Drain electrode (second back surface side drive electrode) 52B ... Source electrode (second main surface side drive electrode) 70 ... Sealing resin 90 ... Connecting member 92 ... End facing wall (a portion of a plurality of second semiconductor elements that surrounds one of the second semiconductor elements at both ends in the second direction from the second direction) 93 ... Intermediate facing wall (a portion of a plurality of second semiconductor elements located between adjacent second semiconductor elements in the second direction) 200 ... Cooler

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Abstract

半導体装置（１）は、第１絶縁部材（１０Ａ）と、第１駆動導電層（２０Ａ）と、第１半導体素子（５０Ａ）と、第２絶縁部材（１０Ｂ）と、第２駆動導電層（２０Ｂ）と、第２半導体素子（５０Ｂ）と、接続部材（９０）と、封止樹脂（７０）と、を備える。封止部材（７０）は、第１半導体素子（５０Ａ）、第２半導体素子（５０Ｂ）および接続部材（９０）を封止する。接続部材（９０）は、第１絶縁部材（１０Ａ）および／または第１駆動導電層（２０Ａ）と、第２絶縁部材（１０Ｂ）および／または第２駆動導電層（２０Ｂ）との間に伝熱経路を形成する。接続部材（９０）の熱伝導率は、封止樹脂（７０）の熱伝導率よりも高い。

Description

半導体装置
　本開示は、半導体装置に関する。
　半導体装置の一例として、第１絶縁部材上に設けられた第１半導体素子と、第１半導体素子よりも上方に配置された第２絶縁部材と、第２絶縁部材上に設けられた第２半導体素子と、を備えた両面放熱構造の半導体装置が知られている（たとえば特許文献１参照）。この半導体装置は、第１絶縁部材に第１冷却器が取り付けられており、第２絶縁部材に第２冷却器が取り付けられた構成である。
特開２０１０－９７９６７号公報
　ところで、搭載場所の状態によっては、上記半導体装置は、第１冷却器と第２冷却器のいずれか一方、たとえば第２冷却器が省略された状態で使用される場合がある。この場合、第１半導体素子から第１冷却器までの熱抵抗と、第２半導体素子から第１冷却器までの熱抵抗との差が大きくなる。その結果、半導体装置の駆動時において第１半導体素子および第２半導体素子のうち熱抵抗が高い方の温度が高くなるため、半導体装置の性能を十分に発揮できないおそれがある。
　本開示の目的は、第１半導体素子から冷却器までの熱抵抗と第２半導体素子から冷却器までの熱抵抗との差の増加を抑制できる半導体装置を提供することにある。
　上記課題を解決する半導体装置は、厚さ方向において互いに反対側を向く第１絶縁主面および第１絶縁裏面を有しており、前記第１絶縁裏面が露出した第１絶縁部材と、前記第１絶縁主面上に設けられた第１駆動導電層と、前記第１駆動導電層に搭載された第１半導体素子と、前記厚さ方向において互いに反対側を向く第２絶縁主面および第２絶縁裏面を有しており、前記第２絶縁裏面が露出し、前記第２絶縁主面が前記第１絶縁主面と前記厚さ方向において対向するように前記第１絶縁部材に対して前記厚さ方向に離間して配置された第２絶縁部材と、前記第２絶縁主面上に設けられた第２駆動導電層と、前記第２駆動導電層に搭載された第２半導体素子と、前記第１絶縁部材および前記第１駆動導電層のうちの少なくとも一方と、前記第２絶縁部材および前記第２駆動導電層のうちの少なくとも一方との間に伝熱経路を形成する接続部材と、前記第１半導体素子、前記第２半導体素子および前記接続部材を封止する封止樹脂と、を備え、前記接続部材の熱伝導率は、前記封止樹脂の熱伝導率よりも高い。
　この構成によれば、接続部材を介して第２半導体素子から冷却器までの伝熱経路が形成されるため、第２半導体素子が搭載される第２絶縁部材に冷却器が取り付けられていない場合に第１半導体素子から冷却器までの熱抵抗と第２半導体素子から冷却器までの熱抵抗との差の増加を抑制できる。
　上記半導体装置によれば、第１半導体素子から冷却器までの熱抵抗と第２半導体素子から冷却器までの熱抵抗との差の増加を抑制できる。
本実施形態の半導体装置の斜視図。 図１の半導体装置の平面図。 図１の半導体装置の側面図。 図３とは異なる方向から視た図１の半導体装置の側面図。 図３および図４とは異なる方向から視た図１の半導体装置の側面図。 本実施形態の半導体装置の第１半導体ユニットの平面図。 本実施形態の半導体装置の第２半導体ユニットの平面図。 図２の８－８線の断面図。 本実施形態の半導体装置の回路図。 比較例の半導体装置の断面図。 変更例の半導体装置の断面図。 変更例の半導体装置の第２半導体ユニットの平面図。 変更例の半導体装置の第２半導体ユニットの平面図。 変更例の半導体装置の第２半導体ユニットの平面図。 変更例の半導体装置の第２半導体ユニットの平面図。 変更例の半導体装置の第２半導体ユニットの平面図。 変更例の半導体装置の第２半導体ユニットの平面図。 変更例の半導体装置の断面図。 変更例の半導体装置の断面図。 変更例の半導体装置の断面図。 変更例の半導体装置の断面図。 変更例の半導体装置の第１半導体ユニットの平面図。 変更例の半導体装置の断面図。 変更例の半導体装置の第２半導体ユニットの平面図。
　以下、半導体装置の実施形態について図面を参照して説明する。以下に示す実施形態は、技術的思想を具体化するための構成や方法を例示するものであり、各構成部品の材質、形状、構造、配置、寸法等を下記のものに限定するものではない。以下の実施形態は、種々の変更を加えることができる。また、添付図面は、理解を容易にするために構成要素を拡大して示している場合がある。構成要素の寸法比率は実際のものと、または別の図面中のものと異なる場合がある。また断面図では、理解を容易にするために一部の構成要素のハッチングを省略している場合がある。
　図１～図９を参照して、本実施形態の半導体装置１の構成について説明する。なお、便宜上、図６において、後述する冷却器２００を省略して示している。また便宜上、図６および図７において、後述する封止樹脂７０を省略して示している。
　また、以降の説明において、半導体装置１の平面視において、互いに直交する２方向をそれぞれｘ方向およびｙ方向とし、ｘ方向およびｙ方向と直交する方向をｚ方向とする。ここで、ｚ方向は厚さ方向の一例であり、ｙ方向は第１方向の一例であり、ｘ方向は第２方向の一例である。
　図１～図８に示すように、半導体装置１は、複数（本実施形態では４個）の第１半導体素子５０Ａおよび複数（本実施形態では４個）の第２半導体素子５０Ｂを封止樹脂７０によって封止した構成である。図１～図５に示すように、半導体装置１が冷却器２００に取り付けられることによって各第１半導体素子５０Ａ（図６参照）および各第２半導体素子５０Ｂ（図７参照）のそれぞれの熱が冷却器２００に移動する。
　封止樹脂７０は、電気絶縁性を有する樹脂材料からなり、たとえば黒色のエポキシ樹脂からなる。封止樹脂７０は、直方体状であり、樹脂側面７１～７４と、第１樹脂主面７５Ａおよび第２樹脂主面７５Ｂと、を有している。
　樹脂側面７１および樹脂側面７２は、ｙ方向において互いに反対側を向いている。ｚ方向から視て、樹脂側面７１，７２はそれぞれ、ｘ方向に沿って延びている。樹脂側面７３および樹脂側面７４は、ｘ方向において互いに反対側を向いている。ｚ方向から視て、樹脂側面７３，７４はそれぞれ、ｙ方向に沿って延びている。第１樹脂主面７５Ａおよび第２樹脂主面７５Ｂは、ｚ方向において互いに反対側を向いている。本実施形態では、第１樹脂主面７５Ａには、冷却器２００が取り付けられている。このため、第２樹脂主面７５Ｂは、ｚ方向において冷却器２００とは反対側の面となる。
　図１～図５に示すように、半導体装置１は、封止樹脂７０から突出する複数の端子８０を備えている。複数の端子８０は、それぞれ金属板からなり、たとえばＣｕ（銅）からなる。複数の端子８０は、第１入力端子８１、第２入力端子８２、出力端子８３、第１制御用端子８４Ａ、第１検出用端子８５Ａ、第２制御用端子８４Ｂおよび第２検出用端子８５Ｂを有している。第１入力端子８１、第２入力端子８２および出力端子８３はそれぞれ、樹脂側面７１からｙ方向に向けて突出している。第１制御用端子８４Ａ、第１検出用端子８５Ａ、第２制御用端子８４Ｂおよび第２検出用端子８５Ｂはそれぞれ、樹脂側面７２からｙ方向に向けて突出している。換言すると、第１入力端子８１、第２入力端子８２および出力端子８３と、第１制御用端子８４Ａ、第１検出用端子８５Ａ、第２制御用端子８４Ｂおよび第２検出用端子８５Ｂとは、ｙ方向において封止樹脂７０の互いに反対側から突出している。
　第１入力端子８１、第２入力端子８２および出力端子８３は、ｚ方向において互いに同じ位置でｘ方向において互いに離間して配列されている。各端子８１～８３は、ｚ方向を厚さ方向とする平板状に形成されている。
　第１制御用端子８４Ａ、第１検出用端子８５Ａ、第２制御用端子８４Ｂおよび第２検出用端子８５Ｂは、ｚ方向において互いに同じ位置でｘ方向において互いに離間して配列されている。第１制御用端子８４Ａおよび第１検出用端子８５Ａは、ｚ方向から視て、樹脂側面７４寄りに配置されている。第２制御用端子８４Ｂおよび第２検出用端子８５Ｂは、ｚ方向から視て、樹脂側面７３寄りに配置されている。各端子８４Ａ，８４Ｂ，８５Ａ，８５Ｂは、ｙ方向に延びる四角柱状に形成されている。
　図８に示すように、半導体装置１は、第１半導体ユニット１Ａおよび第２半導体ユニット１Ｂを備えている。半導体装置１は、第１半導体ユニット１Ａと第２半導体ユニット１Ｂとがｚ方向において対向する構成である。封止樹脂７０は、ｚ方向において第１半導体ユニット１Ａと第２半導体ユニット１Ｂとの間に充填されており、第１半導体ユニット１Ａおよび第２半導体ユニット１Ｂをｘ方向およびｙ方向から取り囲むように構成されている。つまり、第１半導体ユニット１Ａの一部および第２半導体ユニット１Ｂの一部はそれぞれ、封止樹脂７０からｚ方向において露出している。
　図６および図８に示すように、第１半導体ユニット１Ａは、第１絶縁部材１０Ａ、第１駆動導電層２０Ａ、制御導電層４０Ａ、複数（本実施形態では４個）の第１半導体素子５０Ａを備えている。第１半導体ユニット１Ａは、封止樹脂７０のｚ方向の両端部のうち第１樹脂主面７５Ａに近い方の端部に配置されている。つまり、ｚ方向において、第１半導体ユニット１Ａは、第２半導体ユニット１Ｂよりも冷却器２００の近くに配置されている。
　第１絶縁部材１０Ａは、ｚ方向を厚さ方向とする平板状に形成された電気絶縁性を有する基板である。ｚ方向から視た第１絶縁部材１０Ａの形状は、矩形状である。第１絶縁部材１０Ａは、ｚ方向において互いに反対側を向く第１絶縁主面１０Ａｓおよび第１絶縁裏面１０Ａｒを有している。第１絶縁主面１０Ａｓは、ｚ方向において冷却器２００とは反対側を向いている。すなわち第１絶縁主面１０Ａｓは、封止樹脂７０の第２樹脂主面７５Ｂと同じ側を向いている。第１絶縁裏面１０Ａｒは、ｚ方向において冷却器２００に向いている。すなわち第１絶縁裏面１０Ａｒは、封止樹脂７０の第１樹脂主面７５Ａと同じ側を向いている。図８に示すように、第１半導体ユニット１Ａの第１絶縁部材１０Ａの第１絶縁裏面１０Ａｒは、封止樹脂７０の第１樹脂主面７５Ａからｚ方向において露出している。本実施形態では、第１絶縁裏面１０Ａｒは、第１樹脂主面７５Ａと面一である。第１絶縁裏面１０Ａｒには、冷却器２００が取り付けられている。
　なお、第１樹脂主面７５Ａに対する第１絶縁裏面１０Ａｒのｚ方向の位置は任意に変更可能である。一例では、第１絶縁裏面１０Ａｒは、第１樹脂主面７５Ａよりもｚ方向に突出するように設けられてもよい。この場合、冷却器２００は、第１絶縁裏面１０Ａｒに取り付けられる。すなわち、冷却器２００と第１樹脂主面７５Ａとのｚ方向の間には空隙が形成される。
　図６に示すように、第１絶縁部材１０Ａは、絶縁側面１１Ａ～１４Ａを有している。絶縁側面１１Ａおよび絶縁側面１２Ａは、ｙ方向において互いに反対側を向いている。ｚ方向から視て、絶縁側面１１Ａ，１２Ａはそれぞれ、ｘ方向に延びている。絶縁側面１１Ａは封止樹脂７０の樹脂側面７１と同じ側を向いており、絶縁側面１２Ａは封止樹脂７０の樹脂側面７２と同じ側を向いている。絶縁側面１３Ａおよび絶縁側面１４Ａは、ｘ方向において互いに反対側を向いている。ｚ方向から視て、絶縁側面１３Ａ，１４Ａはそれぞれ、ｙ方向に延びている。絶縁側面１３Ａは封止樹脂７０の樹脂側面７３と同じ側を向いており、絶縁側面１４Ａは封止樹脂７０の樹脂側面７４と同じ側を向いている。
　第１駆動導電層２０Ａおよび制御導電層４０Ａはそれぞれ、第１絶縁部材１０Ａの第１絶縁主面１０Ａｓ上に形成されている。各導電層２０Ａ，４０Ａは、たとえばＣｕからなる。第１駆動導電層２０Ａおよび制御導電層４０Ｂは、第１絶縁主面１０Ａｓにおいて互いに離間して配置されている。
　第１駆動導電層２０Ａは、第１駆動配線２１および第２駆動配線２２を有している。第１駆動配線２１および第２駆動配線２２は、第１絶縁主面１０Ａｓにおいて互いに離間して配置されている。
　第１駆動配線２１は、第１絶縁主面１０Ａｓのうちｙ方向において絶縁側面１１Ａの近く、かつｘ方向において絶縁側面１４Ａの近くに配置されている。ｚ方向から視た第１駆動導電層２０Ａの形状は、ｘ方向が長辺方向となり、ｙ方向が短辺方向となる矩形状である。
　第１駆動配線２１には、第１入力端子８１が接続されている。より詳細には、第１駆動配線２１上には、はんだやＡｇペースト等の第１導電性接合材（図示略）が形成されている。第１導電性接合材上には、導電性の接続層（図示略）が搭載されている。接続層上には、はんだやＡｇペースト等の第２導電性接合材（図示略）が形成されている。第２導電性接合材上には、第１入力端子８１が搭載されている。このように、第１入力端子８１は、各導電性接合材および接続層を介して第１駆動導電層２０Ａと電気的に接続されている。ここで、接続層は、たとえば金属材料からなり、本実施形態では、Ｃｕからなる。接続層の一例は、柱状に形成されている。接続層は、たとえば四角柱である。なお、接続層の形状はこれに限られず、円柱、三角柱等の四角柱以外の多角柱であってもよい。
　また、第１駆動配線２１には、複数の第１半導体素子５０Ａが搭載されている。複数の第１半導体素子５０Ａは、ｙ方向において互いに同じ位置でｘ方向において互いに離間して配列されている。ここで、複数の第１半導体素子５０Ａのｙ方向のずれ量の最大値が第１半導体素子５０Ａのｙ方向の寸法の１０％以内であれば、複数の第１半導体素子５０Ａは、ｙ方向において互いに同じ位置にあるといえる。
　本実施形態では、各第１半導体素子５０Ａは、第１駆動配線２１のｙ方向の中央に配置されている。なお、第１駆動配線２１における各第１半導体素子５０Ａの配置位置は任意に変更可能である。一例では、各第１半導体素子５０Ａは、第１駆動配線２１のｙ方向の中央よりも絶縁側面１２Ａ寄りに配置されていてもよい。
　各第１半導体素子５０Ａは、スイッチング素子であり、たとえば、Ｓｉ（ケイ素）、ＳｉＣ（炭化ケイ素）、または、ＧａＮ（窒化ガリウム）やＧａＡｓ（ヒ化ガリウム）、あるいはＧａ２Ｏ３（酸化ガリウム）などからなるトランジスタが用いられる。各第１半導体素子５０ＡがＳｉＣからなる場合、スイッチングの高速化に適している。本実施形態では、各第１半導体素子５０Ａは、ＳｉＣからなるＮチャネル型のＭＯＳＦＥＴ（Metal-Oxide-Semiconductor Field-Effect Transistor）が用いられている。なお、各第１半導体素子５０Ａは、ＭＯＳＦＥＴに限定されず、ＭＩＳＦＥＴ（Metal-Insulator-Semiconductor FET）を含む電界効果トランジスタ、または、ＩＧＢＴ（Insulated Gate Bipolar Transistor）を含むバイポーラトランジスタなどのトランジスタであってもよい。各第１半導体素子５０Ａは、Ｎチャネル型のＭＯＳＦＥＴに代えて、Ｐチャネル型のＭＯＳＦＥＴとしてもよい。
　図８に示すように、第１半導体素子５０Ａは、ｚ方向において第２半導体素子５０Ｂよりも第１絶縁部材１０Ａ寄りに配置されている。換言すると、第１半導体素子５０Ａは、第１絶縁部材１０Ａと第２絶縁部材１０Ｂとのｚ方向の間のうち第２絶縁部材１０Ｂよりも第１絶縁部材１０Ａの近くに配置されている。第１半導体素子５０Ａは、ｚ方向において互いに反対側を向く第１素子主面５０Ａｓおよび第１素子裏面５０Ａｒを有している。第１素子主面５０Ａｓは、第１絶縁主面１０Ａｓと同じ側を向いている。換言すると、第１素子主面５０Ａｓは、第２樹脂主面７５Ｂと同じ側を向いている。第１素子裏面５０Ａｒは、第１絶縁裏面１０Ａｒと同じ側を向いている。換言すると、第１素子裏面５０Ａｒは、第１樹脂主面７５Ａと同じ側を向いている。第１絶縁裏面１０Ａｒには、第１裏面側駆動電極の一例であるドレイン電極５１Ａが形成されている。第１素子主面５０Ａｓには、第１主面側駆動電極の一例であるソース電極５２Ａと、ゲート電極５３Ａとが形成されている。各第１半導体素子５０Ａの第１素子裏面５０Ａｒは、はんだやＡｇペースト等の導電性接合材ＪＡによって第１駆動導電層２０Ａに接合されている。これにより、各第１半導体素子５０Ａのドレイン電極５１Ａは、第１駆動導電層２０Ａと電気的に接続されている。
　第２駆動配線２２は、第１駆動配線２１を絶縁側面１３Ａの近くおよび絶縁側面１２Ａの近くから取り囲むように形成されている。ｚ方向から視た第２駆動配線２２の形状は、Ｌ字状である。第２駆動配線２２は、ｘ方向に延びる主配線部２２ａと、主配線部２２ａからｙ方向に延びる接続配線部２２ｂと、を有している。本実施形態では、主配線部２２ａおよび接続配線部２２ｂは、一体的に形成された単一部材である。
　主配線部２２ａは、ｙ方向において第１駆動配線２１よりも絶縁側面１２Ａの近くに配置されている。ｚ方向から視た主配線部２２ａの形状は、ｘ方向が長辺方向となり、ｙ方向が短辺方向となる矩形状である。主配線部２２ａは、ｙ方向から視て、第１駆動配線２１と重なる部分を有している。一方、主配線部２２ａおよび第１駆動配線２１は、ｘ方向において互いにずれている。より詳細には、主配線部２２ａは、ｘ方向において第１駆動配線２１よりも絶縁側面１３Ａ寄りにはみ出す部分を有している。第１駆動配線２１は、ｘ方向において主配線部２２ａよりも絶縁側面１４Ａ寄りにはみ出す部分を有している。
　接続配線部２２ｂは、主配線部２２ａのｘ方向の両端部のうち絶縁側面１３Ａの近くの端部から絶縁側面１１Ａに向けて延びている。ｚ方向から視た接続配線部２２ｂの形状は、ｙ方向が長辺方向となり、ｘ方向が短辺方向となる矩形状である。接続配線部２２ｂは、第１駆動配線２１よりも絶縁側面１４Ａの近くに配置されており、ｘ方向から視て第１駆動配線２１と重なるように配置されている。
　接続配線部２２ｂには、第２入力端子８２が接続されている。図示されていないが、接続配線部２２ｂと第２入力端子８２との接続構造は、第１駆動導電層２０Ａと第１入力端子８１との接続構造と同じである。
　制御導電層４０Ａは、制御用配線４１Ａおよび検出用配線４２Ａを有している。制御用配線４１Ａおよび検出用配線４２Ａは、第１絶縁主面１０Ａｓにおいて互いに離間して配置されている。制御用配線４１Ａおよび検出用配線４２Ａはそれぞれ、第２駆動配線２２の主配線部２２ａを絶縁側面１１Ａ、絶縁側面１４Ａおよび絶縁側面１２Ａから取り囲むように形成されている。ｚ方向から視た制御用配線４１Ａおよび検出用配線４２Ａのそれぞれの形状は、略Ｕ字状である。検出用配線４２Ａは、制御用配線４１Ａよりも第２駆動配線２２の主配線部２２ａの近くに配置されている。換言すると、制御用配線４１Ａは、検出用配線４２Ａを絶縁側面１１Ａ、絶縁側面１４Ａおよび絶縁側面１２Ａから取り囲むように形成されている。
　制御用配線４１Ａには、第１制御用端子８４Ａが接続されている。検出用配線４２Ａには、第１検出用端子８５Ａが接続されている。図示されていないが、制御用配線４１Ａと第１制御用端子８４Ａとの接合構造、および、検出用配線４２Ａと第１検出用端子８５Ａとの接合構造はそれぞれ、第１駆動導電層２０Ａと第１入力端子８１との接続構造と同じである。ｚ方向から視て、第１制御用端子８４Ａは、第１検出用端子８５Ａよりも絶縁側面１４Ａの近くに配置されている。なお、ｚ方向から視た第１制御用端子８４Ａおよび第１検出用端子８５Ａの配置位置は任意に変更可能である。一例では、ｚ方向から視て、第１検出用端子８５Ａは、第１制御用端子８４Ａよりも絶縁側面１４Ａの近くに配置されていてもよい。
　図６に示すように、第１半導体ユニット１Ａは、各第１半導体素子５０Ａのソース電極５２Ａと検出用配線４２Ａとを接続するワイヤＷ１と、各第１半導体素子５０Ａのゲート電極５３Ａと制御用配線４１Ａとを接続するワイヤＷ２と、を有している。ワイヤＷ１，Ｗ２はそれぞれ、たとえばＡｕ（金）からなる。なお、ワイヤＷ１，Ｗ２はそれぞれ、ＣｕまたはＡｌ（アルミニウム）からなる構成であってもよい。これにより、各第１半導体素子５０Ａのソース電極５２Ａと検出用配線４２ＡとがワイヤＷ２を介して電気的に接続されている。各第１半導体素子５０Ａのゲート電極５３Ａと制御用配線４１ＡとがワイヤＷ１を介して電気的に接続されている。
　図７および図８に示すように、第２半導体ユニット１Ｂは、第２絶縁部材１０Ｂ、第２駆動導電層２０Ｂ、制御導電層４０Ｂ、複数（本実施形態では４個）の第２半導体素子５０Ｂおよび第２接続層６０Ｂを備えている。第２半導体ユニット１Ｂは、封止樹脂７０のｚ方向の両端部のうち第２樹脂主面７５Ｂに近い方の端部に配置されている。つまり、第２半導体ユニット１Ｂは、冷却器２００から遠い位置に配置されている。
　第２絶縁部材１０Ｂは、ｚ方向を厚さ方向とする平板状に形成された電気絶縁性を有する基板である。第２絶縁部材１０Ｂは、ｚ方向において第１絶縁部材１０Ａと離間した状態でｚ方向において第１絶縁部材１０Ａと対向するように配置されている。ｚ方向から視た第２絶縁部材１０Ｂの形状は、矩形状である。第２絶縁部材１０Ｂは、ｚ方向において互いに反対側を向く第２絶縁主面１０Ｂｓおよび第２絶縁裏面１０Ｂｒを有している。第２絶縁裏面１０Ｂｒは、ｚ方向において冷却器２００とは反対側を向いている。すなわち第２絶縁裏面１０Ｂｒは、封止樹脂７０の第２樹脂主面７５Ｂと同じ側を向いている。図８に示すように、第２半導体ユニット１Ｂの第２絶縁部材１０Ｂの第２絶縁裏面１０Ｂｒは、封止樹脂７０の第２樹脂主面７５Ｂからｚ方向において露出している。本実施形態では、第２絶縁裏面１０Ｂｒは、第２樹脂主面７５Ｂと面一である。第２絶縁主面１０Ｂｓは、ｚ方向において冷却器２００に向いている。すなわち第２絶縁主面１０Ｂｓは、封止樹脂７０の第１樹脂主面７５Ａと同じ側を向いている。また、第２絶縁主面１０Ｂｓは、第１絶縁部材１０Ａの第１絶縁主面１０Ａｓとｚ方向に対向するように配置されているともいえる。
　なお、第２樹脂主面７５Ｂに対する第２絶縁裏面１０Ｂｒのｚ方向の位置は任意に変更可能である。一例では、第２絶縁裏面１０Ｂｒは、第２樹脂主面７５Ｂからｚ方向に突出するように設けられてもよい。
　また、第２絶縁部材１０Ｂは、絶縁側面１１Ｂ～１４Ｂを有している。絶縁側面１１Ｂおよび絶縁側面１２Ｂは、ｙ方向において互いに反対側を向いている。ｚ方向から視て、絶縁側面１１Ｂ，１２Ｂはそれぞれ、ｘ方向に延びている。絶縁側面１１Ｂは封止樹脂７０の樹脂側面７１と同じ側を向いており、絶縁側面１２Ｂは封止樹脂７０の樹脂側面７２と同じ側を向いている。このため、絶縁側面１１Ｂは第１絶縁部材１０Ａの絶縁側面１１Ａと同じ側を向いており、絶縁側面１２Ｂは第１絶縁部材１０Ａの絶縁側面１２Ａと同じ側を向いている。絶縁側面１３Ｂおよび絶縁側面１４Ｂは、ｘ方向において互いに反対側を向いている。ｚ方向から視て、絶縁側面１３Ｂ，１４Ｂはそれぞれ、ｙ方向に延びている。絶縁側面１３Ｂは封止樹脂７０の樹脂側面７３と同じ側を向いており、絶縁側面１４Ｂは封止樹脂７０の樹脂側面７４と同じ側を向いている。このため、絶縁側面１３Ｂは第１絶縁部材１０Ａの絶縁側面１３Ａと同じ側を向いており、絶縁側面１４Ｂは第１絶縁部材１０Ａの絶縁側面１４Ａと同じ側を向いている。
　第２駆動導電層２０Ｂおよび制御導電層４０Ｂはそれぞれ、第２絶縁部材１０Ｂの第２絶縁主面１０Ｂｓ上に形成されている。各導電層２０Ｂ，４０Ｂは、たとえばＣｕからなる。第２駆動導電層２０Ｂおよび制御導電層４０Ｂは、第２絶縁主面１０Ｂｓにおいて互いに離間して配置されている。
　第２駆動導電層２０Ｂは、第２絶縁部材１０Ｂの第２絶縁主面１０Ｂｓのうちｙ方向における絶縁側面１１Ｂ寄りに配置されている。第２駆動導電層２０Ｂは、第２絶縁主面１０Ｂｓのうち大部分にわたり形成されている。ｚ方向から視た第２駆動導電層２０Ｂの形状は、矩形状である。
　第２駆動導電層２０Ｂには、出力端子８３が接続されている。第２駆動導電層２０Ｂと出力端子８３との接続構造は、第１駆動導電層２０Ａと第１入力端子８１との接続構造と同じである。すなわち、図８に示すように、第２駆動導電層２０Ｂ上には、はんだやＡｇペースト等の第１導電性接合材ＪＥ１が形成されている。第１導電性接合材ＪＥ１上には、導電性の接続層３０が搭載されている。接続層３０上には、はんだやＡｇペースト等の第２導電性接合材ＪＥ２が形成されている。第２導電性接合材ＪＥ２上には、出力端子８３が搭載されている。このように、出力端子８３は、各導電性接合材ＪＥ１，ＪＥ２および接続層３０を介して第２駆動導電層２０Ｂと電気的に接続されている。ここで、接続層３０は、たとえば金属材料からなり、本実施形態では、Ｃｕからなる。接続層３０の一例は、柱状に形成されている。接続層３０は、たとえば四角柱である。なお、接続層３０の形状はこれに限られず、円柱、三角柱等の四角柱以外の多角柱であってもよい。
　図７に示すように、第２駆動導電層２０Ｂには、複数の第２半導体素子５０Ｂが搭載されている。本実施形態では、各第２半導体素子５０Ｂは、第２駆動導電層２０Ｂのうち絶縁側面１２Ｂ寄りかつ絶縁側面１３Ｂ寄りに配置されている。具体的には、各第２半導体素子５０Ｂは、第２駆動導電層２０Ｂのうちｚ方向において第１半導体ユニット１Ａの第２駆動配線２２の主配線部２２ａと対向する領域Ｒ内に配置されている。
　複数の第２半導体素子５０Ｂは、ｙ方向において互いに同じ位置でｘ方向において互いに離間して配列されている。ここで、複数の第２半導体素子５０Ｂのｙ方向のずれ量の最大値が第２半導体素子５０Ｂのｙ方向の寸法の１０％以内であれば、複数の第２半導体素子５０Ｂは、ｙ方向において互いに同じ位置にあるといえる。図６～図８に示すように、第２半導体素子５０Ｂは、ｙ方向において第１半導体素子５０Ａと離間して配置されている。ｚ方向から視て、複数の第１半導体素子５０Ａと複数の第２半導体素子５０Ｂとはｘ方向において互いにずれている。複数の第１半導体素子５０Ａは、複数の第２半導体素子５０Ｂに対して樹脂側面７４寄りにずれて配置されている。ｙ方向からみて、各第１半導体素子５０Ａと各第２半導体素子５０Ｂとは、一部が重なるように配置されている。
　各第２半導体素子５０Ｂは、たとえば、Ｓｉ、ＳｉＣ、または、ＧａＮやＧａＡｓ、あるいはＧａ２Ｏ３などからなるトランジスタが用いられる。各第２半導体素子５０ＢがＳｉＣからなる場合、スイッチングの高速化に適している。本実施形態では、各第２半導体素子５０Ｂは、ＳｉＣからなるＮチャネル型のＭＯＳＦＥＴが用いられている。なお、各第２半導体素子５０Ｂは、ＭＯＳＦＥＴに限定されず、ＭＩＳＦＥＴを含む電界効果トランジスタ、または、ＩＧＢＴを含むバイポーラトランジスタなどのトランジスタであってもよい。各第２半導体素子５０Ｂは、Ｎチャネル型のＭＯＳＦＥＴに代えて、Ｐチャネル型のＭＯＳＦＥＴとしてもよい。
　図８に示すように、第２半導体素子５０Ｂは、ｚ方向において第１半導体素子５０Ａよりも第２絶縁部材１０Ｂ寄りに配置されている。換言すると、第２半導体素子５０Ｂは、第１絶縁部材１０Ａと第２絶縁部材１０Ｂとのｚ方向の間のうち第１絶縁部材１０Ａよりも第２絶縁部材１０Ｂの近くに配置されている。第２半導体素子５０Ｂは、ｚ方向において互いに反対側を向く第２素子主面５０Ｂｓおよび第２素子裏面５０Ｂｒを有している。第２素子主面５０Ｂｓは、第２絶縁主面１０Ｂｓと同じ側を向いている。換言すると、第２素子主面５０Ｂｓは、第１樹脂主面７５Ａと同じ側を向いている。第２素子裏面５０Ｂｒは、第２絶縁裏面１０Ｂｒと同じ側を向いている。換言すると、第２素子裏面５０Ｂｒは、第２樹脂主面７５Ｂと同じ側を向いている。図８に示すとおり、ｚ方向において第２半導体素子５０Ｂの配置方向は、第１半導体素子５０Ａの配置方向と逆向きとなる。第２絶縁裏面１０Ｂｒには、第２裏面側駆動電極の一例であるドレイン電極５１Ｂが形成されている。第２素子主面５０Ｂｓには、第２主面側駆動電極の一例であるソース電極５２Ｂと、ゲート電極５３Ｂとが形成されている。各第２半導体素子５０Ｂの第２素子裏面５０Ｂｒは、はんだやＡｇペースト等の導電性接合材ＪＢによって第２駆動導電層２０Ｂに接合されている。これにより、各第２半導体素子５０Ｂのドレイン電極５１Ｂは、第２駆動導電層２０Ｂと電気的に接続されている。
　図７に示すように、制御導電層４０Ｂは、第２絶縁部材１０Ｂの第２絶縁主面１０Ｂｓのうちｙ方向における第２駆動導電層２０Ｂと絶縁側面１２Ｂとの間に配置されている。制御導電層４０Ｂは、制御用配線４１Ｂおよび検出用配線４２Ｂを有している。ｚ方向から視た制御用配線４１Ｂおよび検出用配線４２Ｂの形状はそれぞれ、ｘ方向に延びる細帯状である。制御用配線４１Ｂおよび検出用配線４２Ｂは、ｘ方向において互いに同じ位置でｙ方向において互いに離間して配列されている。制御用配線４１Ｂは、検出用配線４２Ｂよりも第２駆動導電層２０Ｂの近くに配置されている。
　制御用配線４１Ｂには、第２制御用端子８４Ｂが接続されている。検出用配線４２Ｂには、第２検出用端子８５Ｂが接続されている。図示されていないが、制御用配線４１Ｂと第２制御用端子８４Ｂとの接合構造、および、検出用配線４２Ｂと第２検出用端子８５Ｂとの接合構造はそれぞれ、第１駆動導電層２０Ａと第１入力端子８１との接続構造と同じである。ｚ方向から視て、第２検出用端子８５Ｂは、第２制御用端子８４Ｂよりも絶縁側面１３Ａの近くに配置されている。なお、ｚ方向から視て、第２制御用端子８４Ｂおよび第２検出用端子８５Ｂの配置位置は任意に変更可能である。一例では、ｚ方向から視て、第２制御用端子８４Ｂは、第２検出用端子８５Ｂよりも絶縁側面１３Ａの近くに配置されていてもよい。
　図７に示すように、第２半導体ユニット１Ｂは、各第２半導体素子５０Ｂのソース電極５２Ｂと検出用配線４２Ｂとを接続するワイヤＷ３と、各第２半導体素子５０Ｂのゲート電極５３Ｂと制御用配線４１Ｂとを接続するワイヤＷ４と、を有している。ワイヤＷ３，Ｗ４はそれぞれ、たとえばＡｕからなる。なお、ワイヤＷ３，Ｗ４はそれぞれ、ＣｕまたはＡｌからなる構成であってもよい。これにより、各第２半導体素子５０Ｂのソース電極５２Ｂと検出用配線４２Ｂとが電気的に接続されている。各第２半導体素子５０Ｂのゲート電極５３Ｂと制御用配線４１Ｂとが電気的に接続されている。
　図８に示すように、複数の第１半導体素子５０Ａのソース電極５２Ａはそれぞれ、第２半導体ユニット１Ｂの第２駆動導電層２０Ｂと電気的に接続されている。より詳細には、ソース電極５２Ａ上には、はんだやＡｇペースト等の第１導電性接合材ＪＡ１が配置されている。第１導電性接合材ＪＡ１上には、導電性の第１接続層６０Ａが載置されている。第２駆動配線２２において第１接続層６０Ａとｚ方向に対向する部分には、はんだやＡｇペースト等の第２導電性接合材ＪＡ２が配置されている。第２導電性接合材ＪＡ２は、第１接続層６０Ａと接触している。すなわち、第１接続層６０Ａは、各導電性接合材ＪＡ１，ＪＡ２によってソース電極５２Ａと第２駆動導電層２０Ｂとに接合されている。このように、ソース電極５２Ａと第２駆動導電層２０Ｂとは、各導電性接合材ＪＡ１，ＪＡ２および第１接続層６０Ａを介して電気的に接続されている。
　第１接続層６０Ａは、たとえば金属材料からなり、本実施形態ではＣｕからなる。第１接続層６０Ａの一例は、柱状に形成されている。第１接続層６０Ａは、たとえば四角柱である。なお、第１接続層６０Ａの形状はこれに限られず、円柱、三角柱等の四角柱以外の多角柱であってもよい。図８に示すとおり、本実施形態では、第１接続層６０Ａの厚さ（第１接続層６０Ａのｚ方向の寸法）は、第１半導体素子５０Ａの厚さ（第１半導体素子５０Ａのｚ方向の寸法）よりも厚い。
　図８に示すように、複数の第２半導体素子５０Ｂのソース電極５２Ｂはそれぞれ、第１半導体ユニット１Ａの第１駆動導電層２０Ａの第２駆動配線２２と電気的に接続されている。より詳細には、ソース電極５２Ｂ上には、はんだやＡｇペースト等の第１導電性接合材ＪＢ１が配置されている。第１導電性接合材ＪＢ１上には、導電性の第２接続層６０Ｂが載置されている。第２駆動配線２２において第２接続層６０Ｂとｚ方向に対向する部分には、はんだやＡｇペースト等の第２導電性接合材ＪＢ２が配置されている。第２導電性接合材ＪＢ２は、第２接続層６０Ｂと接触している。すなわち、第２接続層６０Ｂは、各導電性接合材ＪＢ１，ＪＢ２によってソース電極５２Ｂと第２駆動配線２２とに接合されている。このように、ソース電極５２Ｂと第２駆動配線２２とは、各導電性接合材ＪＢ１，ＪＢ２および第２接続層６０Ｂを介して電気的に接続されている。
　第２接続層６０Ｂは、たとえば金属材料からなり、本実施形態ではＣｕからなる。第２接続層６０Ｂの一例は、柱状に形成されている。第２接続層６０Ｂは、たとえば四角柱である。なお、第２接続層６０Ｂの形状はこれに限られず、円柱、三角柱等の四角柱以外の多角柱であってもよい。図８に示すとおり、本実施形態では、第２接続層６０Ｂの厚さ（第２接続層６０Ｂのｚ方向の寸法）は、第２半導体素子５０Ｂの厚さ（第２半導体素子５０Ｂのｚ方向の寸法）よりも厚い。
　なお、第１接続層６０Ａおよび第２接続層６０Ｂの厚さはそれぞれ任意に変更可能である。一例では、第１接続層６０Ａの厚さは、第１半導体素子５０Ａの厚さ以下であってもよい。第２接続層６０Ｂの厚さは、第２半導体素子５０Ｂの厚さ以下であってもよい。
　このような構成の半導体装置１の回路構成は、互いに並列接続された４個の第１半導体素子５０Ａと、互いに並列接続された４個の第２半導体素子５０Ｂとが直列接続されたハーフブリッジ型のインバータ回路である。図９は、半導体装置１のインバータ回路の一例を示している。図９では、便宜上、互いに並列接続された４個の第１半導体素子５０Ａを１つの第１半導体素子５０Ａとして示し、互いに並列接続された４個の第２半導体素子５０Ｂを１つの第２半導体素子５０Ｂとして示している。
　図９に示すように、第１半導体素子５０Ａのドレイン電極５１Ａは、第１入力端子８１に電気的に接続されている。第１半導体素子５０Ａのソース電極５２Ａは、第２半導体素子５０Ｂのドレイン電極５１Ｂと電気的に接続されている。第１半導体素子５０Ａのソース電極５２Ａと第２半導体素子５０Ｂのドレイン電極５１ＢとのノードＮには、出力端子８３が接続されている。第２半導体素子５０Ｂのソース電極５２Ｂは、第２入力端子８２に電気的に接続されている。
　第１半導体素子５０Ａのゲート電極５３Ａは、第１制御用端子８４Ａに接続されている。第２半導体素子５０Ｂのゲート電極５３Ｂは、第２制御用端子８４Ｂに接続されている。第１半導体素子５０Ａのソース電極５２ＡとノードＮとの間のノードＮＡには、第１検出用端子８５Ａが接続されている。第２半導体素子５０Ｂのソース電極５２Ｂと第２入力端子８２との間のノードＮＢには、第２検出用端子８５Ｂが接続されている。
　次に、図７および図８を参照して、半導体装置１の放熱構造について説明する。
　図８に示すように、半導体装置１は、第１駆動導電層２０Ａと第２駆動導電層２０Ｂとを接続する接続部材９０を備えている。本実施形態では、接続部材９０は、たとえば接着剤（図示略）によって第１駆動導電層２０Ａと第２駆動導電層２０Ｂとのそれぞれに接合されている。
　接続部材９０の熱伝導率は、封止樹脂７０の熱伝導率よりも高い。また接続部材９０の熱伝導率は、空気の熱伝導率よりも高い。接続部材９０の熱伝導率は、１０Ｗ／ｍＫ以上であることが好ましい。接続部材９０は、電気絶縁性を有する材料からなり、たとえばＳｉ、またはアルミナ、窒化アルミニウム等のセラミックスのような放熱性に優れた材料からなる。本実施形態では、接続部材９０は、セラミックスからなる。接続部材９０は、冷却器２００が取り付けられていない半導体ユニットの半導体素子（本実施形態では、第２半導体ユニット１Ｂの各第２半導体素子５０Ｂ）の放熱を補助するための部材である。本実施形態では、接続部材９０は、第１駆動導電層２０Ａの第２駆動配線２２と、第２駆動導電層２０Ｂとの間に伝熱経路を形成している。
　接続部材９０は、ｙ方向において第２半導体素子５０Ｂに対して制御導電層４０Ｂとは反対側に配置されている。本実施形態では、接続部材９０は、ｙ方向において第１半導体素子５０Ａと第２半導体素子５０Ｂとの間に配置されている。より詳細には、接続部材９０は、ｙ方向において第１半導体素子５０Ａよりも第２半導体素子５０Ｂの近くに配置されている。接続部材９０は、ｙ方向において第２半導体素子５０Ｂと隣り合う位置に配置されている。図７に示すように、接続部材９０は、領域Ｒ内に配置されている。
　図７に示すように、接続部材９０は、全ての第２半導体素子５０Ｂとｙ方向に対向するようにｘ方向に延びている。つまり、接続部材９０は、ｙ方向において全ての第２半導体素子５０Ｂと隣り合うように配置されている。ｚ方向から視た接続部材９０の形状は、ｘ方向が長辺方向となり、ｙ方向が短辺方向となる矩形状である。接続部材９０のｙ方向の大きさは、第２半導体素子５０Ｂのｙ方向の大きさよりも小さい。図７および図８に示すように、本実施形態の接続部材９０は、ｙ方向を厚さ方向とする平板状のブロックからなる。
　図８および図１０を参照して、本実施形態の作用について説明する。
　図１０は、比較例の半導体装置１Ｘの断面構造を示している。比較例の半導体装置１Ｘは、本実施形態の半導体装置１から接続部材９０を省略した構成である。このため、比較例の半導体装置１Ｘにおいて、半導体装置１と共通する構成要素については同一符号を付し、その説明を省略する。
　半導体装置１Ｘにおいて各第１半導体素子５０Ａおよび各第２半導体素子５０Ｂが駆動する場合、各第１半導体素子５０Ａおよび各第２半導体素子５０Ｂは発熱する。第１半導体ユニット１Ａの第１絶縁部材１０Ａには冷却器２００が取り付けられているため、各第１半導体素子５０Ａの熱は、図１０の矢印ＹＸ１に示すとおり、導電性接合材ＪＡ、第１駆動導電層２０Ａの第１駆動配線２１および第１絶縁部材１０Ａを介して冷却器２００に移動する。また、第２半導体ユニット１Ｂの第２絶縁部材１０Ｂに冷却器２００が取り付けられていないため、各第２半導体素子５０Ｂの熱は、図１０の矢印ＹＸ２に示すとおり、第１導電性接合材ＪＢ１、第２接続層６０Ｂ、第２導電性接合材ＪＢ２、第１駆動導電層２０Ａの第２駆動配線２２および第１絶縁部材１０Ａを介して冷却器２００に移動する。このように、各第２半導体素子５０Ｂから冷却器２００までの熱抵抗は、各第１半導体素子５０Ａから冷却器２００までの熱抵抗よりも高くなる。その結果、各第２半導体素子５０Ｂは、各第１半導体素子５０Ａよりも放熱しにくくなり、各第１半導体素子５０Ａよりも温度が高くなりやすい。
　一方、本実施形態の半導体装置１において各第１半導体素子５０Ａおよび各第２半導体素子５０Ｂが駆動する場合、各第１半導体素子５０Ａの熱は、図８の矢印Ｙ１に示すとおり、導電性接合材ＪＡ、第１駆動導電層２０Ａの第１駆動配線２１および第１絶縁部材１０Ａを介して冷却器２００に移動する。
　また、各第２半導体素子５０Ｂの熱は、２つの伝熱経路を介して冷却器２００に移動する。より詳細には、各第２半導体素子５０Ｂの熱は、図８の矢印Ｙ２に示すとおり、第１導電性接合材ＪＢ１、第２接続層６０Ｂ、第２導電性接合材ＪＢ２、第１駆動導電層２０Ａの第２駆動配線２２および第１絶縁部材１０Ａを介して冷却器２００に移動する。また各第２半導体素子５０Ｂの熱は、図８の矢印Ｙ３に示すとおり、導電性接合材ＪＢ、第２駆動導電層２０Ｂ、接続部材９０、第１駆動導電層２０Ａの第２駆動配線２２および第１絶縁部材１０Ａを介して冷却器２００に移動する。このように、各第２半導体素子５０Ｂの熱が矢印Ｙ２の伝熱経路および矢印Ｙ３の伝熱経路の２つの経路を介して冷却器２００に移動するため、各第２半導体素子５０Ｂから冷却器２００までの熱抵抗と、各第１半導体素子５０Ａから冷却器２００までの熱抵抗との差の増加を抑制できる。これにより、各第２半導体素子５０Ｂは、各第１半導体素子５０Ａと同様の放熱性能を有し、各第１半導体素子５０Ａよりも温度が高くなりやすくなることを抑制できる。
　本実施形態の半導体装置１によれば、以下の効果が得られる。
　（１）半導体装置１は、第１駆動導電層２０Ａと第２駆動導電層２０Ｂとを接続している接続部材９０と、第１半導体素子５０Ａ、第２半導体素子５０Ｂおよび接続部材９０を封止する封止樹脂７０と、を備えている。接続部材９０は、各第２半導体素子５０Ｂから冷却器２００への伝熱経路を形成している。接続部材９０の熱伝導率は、封止樹脂７０の熱伝導率よりも高い。この構成によれば、第１半導体素子５０Ａよりも冷却器２００から遠い第２半導体素子５０Ｂと冷却器２００との伝熱経路を増やすことができるため、半導体装置１における第１半導体素子５０Ａから冷却器２００までの熱抵抗と第２半導体素子５０Ｂから冷却器２００までの熱抵抗との差の増加を抑制できる。したがって、第１半導体素子５０Ａおよび第２半導体素子５０Ｂが駆動しているときに、第２半導体素子５０Ｂの温度が第１半導体素子５０Ａの温度よりも高くなりすぎることを抑制できるため、半導体装置１の性能を十分に発揮できる。
　（２）たとえば、接続部材９０が第２絶縁部材１０Ｂの第２絶縁主面１０Ｂｓに接続される構成では、第２半導体素子５０Ｂの熱は、第２駆動導電層２０Ｂおよび第２絶縁部材１０Ｂに伝わり、再び第２駆動導電層２０Ｂに伝わって接続部材９０に移動する。このため、第２半導体素子５０Ｂから接続部材９０までの伝熱経路が長くなる。
　その点、本実施形態では、接続部材９０は、第２駆動導電層２０Ｂと接続している。この構成によれば、第２半導体素子５０Ｂの熱が第２駆動導電層２０Ｂから接続部材９０に伝わるため、伝熱経路が短くなる。したがって、第２半導体素子５０Ｂの熱が接続部材９０に伝わりやすくなる。
　（３）ｚ方向から視て、接続部材９０は、第１半導体素子５０Ａよりも第２半導体素子５０Ｂの近くに配置されている。この構成によれば、第１半導体素子５０Ａの熱よりも第２半導体素子５０Ｂの熱が接続部材９０に伝わりやすくなるため、第２半導体素子５０Ｂが第１半導体素子５０Ａよりも温度が高くなりやすくなることを抑制できる。
　（４）第２半導体素子５０Ｂの第２素子主面５０Ｂｓにはソース電極５２Ｂが形成されており、第２接続層６０Ｂを介して第１駆動導電層２０Ａの第２駆動配線２２と接続されている。この構成によれば、第２半導体素子５０Ｂの熱が第２接続層６０Ｂ、第２駆動配線２２および第１絶縁部材１０Ａを介して冷却器２００に移動する。したがって、第２半導体素子５０Ｂの温度が過度に高くなることを抑制できる。
　第１半導体素子５０Ａの第１素子主面５０Ａｓにはソース電極５２Ａが形成されており、第１接続層６０Ａを介して第２駆動導電層２０Ｂと接続されている。この構成によれば、第１半導体素子５０Ａの熱が第１接続層６０Ａ、第２駆動導電層２０Ｂおよび第２絶縁部材１０Ｂに伝わるため、第１半導体素子５０Ａの温度が過度に高くなることを抑制できる。
　（５）ｙ方向から視て、接続部材９０は、複数の第２半導体素子５０Ｂの全てと重なるように配置されている。この構成によれば、複数の第２半導体素子５０Ｂの熱がそれぞれ接続部材９０に移動するため、複数の第２半導体素子５０Ｂの温度のばらつきを抑制できる。
　（６）接続部材９０は、ｙ方向において複数の第２半導体素子５０Ｂの全て隣り合うように配置されている。この構成によれば、複数の第２半導体素子５０Ｂの熱がそれぞれ接続部材９０に移動しやすくなる。したがって、複数の第２半導体素子５０Ｂの温度がそれぞれ過度に高くなることを抑制できる。
　（７）接続部材９０が第２半導体素子５０Ｂと、第２絶縁部材１０Ｂの第２絶縁主面１０Ｂｓ上に形成された制御導電層４０Ｂとの間に配置された場合、第２半導体素子５０Ｂと制御用配線４１Ｂとを接続するワイヤＷ３と、第２半導体素子５０Ｂと検出用配線４２Ｂとを接続するワイヤＷ４とを接続部材９０を避けて形成する必要がある。このため、ワイヤＷ３，Ｗ４の長さが長くなったり、ワイヤＷ３，Ｗ４の形成が困難となったりする場合がある。
　その点、本実施形態では、接続部材９０は、制御導電層４０Ｂとは反対側に配置されている。この構成によれば、接続部材９０を避けるようにワイヤＷ３，Ｗ４を形成する必要がないため、ワイヤＷ３，Ｗ４を容易に形成できるとともにワイヤＷ３，Ｗ４のそれぞれの長さを短くすることができる。
　（８）第１絶縁部材１０Ａおよび第２絶縁部材１０Ｂはそれぞれ、セラミックスからなる。この構成によれば、各第１半導体素子５０Ａおよび各第２半導体素子５０Ｂの熱が第１絶縁部材１０Ａから冷却器２００に伝わりやすくなる。また各第１半導体素子５０Ａおよび各第２半導体素子５０Ｂの熱が第２絶縁部材１０Ｂを介して外部に放熱しやすくなる。
　（９）第１入力端子８１、第２入力端子８２、および出力端子８３はそれぞれ封止樹脂７０の樹脂側面７４から突出している。この構成によれば、半導体装置１を実装基板に実装し、実装基板にたとえばスナバ用コンデンサを設ける場合、半導体装置１とスナバ用コンデンサとを接続する配線を容易に形成できる。
　（１０）接続部材９０のｙ方向の大きさは、第２半導体素子５０Ｂのｙ方向の大きさよりも小さい。この構成によれば、第１駆動導電層２０Ａの第２駆動配線２２のｙ方向の大きさの増加を抑制できるため、半導体装置１のｙ方向の大型化を抑制できる。
　（変更例）
　上記実施形態は本開示に関する半導体装置が取り得る形態の例示であり、その形態を制限することを意図していない。本開示に関する半導体装置は、上記実施形態に例示された形態とは異なる形態を取り得る。その一例は、上記実施形態の構成の一部を置換、変更、もしくは、省略した形態、または上記実施形態に新たな構成を付加した形態である。また、以下の各変更例は、技術的に矛盾しない限り、互いに組み合わせることができる。以下の各変更例において、上記実施形態と共通する部分については、上記実施形態と同一の符号を付してその説明を省略する。
　・上記実施形態において、封止樹脂７０のｘ方向の大きさおよびｙ方向の大きさはそれぞれ任意に変更可能である。一例では、封止樹脂７０は、第１絶縁部材１０Ａの絶縁側面１１Ａ～１４Ａが露出するように形成されてもよい。封止樹脂７０は、第２絶縁部材１０Ｂの絶縁側面１１Ｂ～１４Ｂが露出するように形成されてもよい。
　・上記実施形態において、接続部材９０と第１駆動導電層２０Ａとの間の接着剤と、接続部材９０と第２駆動導電層２０Ｂとの間の接着剤との少なくとも一方を省略してもよい。たとえば接続部材９０と第１駆動導電層２０Ａとの間の接着剤を省略した場合、接続部材９０と第１駆動導電層２０Ａとは互いに接触している。またたとえば接続部材９０と第２駆動導電層２０Ｂとの間の接着剤を省略した場合、接続部材９０と第２駆動導電層２０Ｂとは互いに接触している。
　・上記実施形態において、接続部材９０のｙ方向の寸法は任意に変更可能である。一例では、図１１に示すように、接続部材９０のｙ方向の寸法を上記実施形態の接続部材９０のｙ方向の寸法よりも大きくしてもよい。この場合、各第２半導体素子５０Ｂは、第２駆動導電層２０Ｂのｙ方向の両端部のうち絶縁側面１２Ｂに近い方の端部に配置されている。これにより、領域Ｒ（図７参照）のうちｙ方向において接続部材９０が配置可能なスペースを拡大させることができる。これにより、接続部材９０のｙ方向の寸法を大きくしても、接続部材９０は、領域Ｒ内に収まっている。
　この構成によれば、接続部材９０の体積が大きくなるため、各第２半導体素子５０Ｂの熱が接続部材９０を介して冷却器２００に移動しやすくなる。したがって、各第２半導体素子５０Ｂの温度が各第１半導体素子５０Ａの温度よりも高くなりやすくなることを一層抑制できる。
　・上記実施形態において、接続部材９０のｘ方向の長さは任意に変更可能である。接続部材９０のｘ方向の長さは、ｙ方向において複数の第２半導体素子５０Ｂのうち一部の第２半導体素子５０Ｂと対向するような長さであってもよい。
　・上記実施形態において、ｚ方向から視た接続部材９０の形状は任意に変更可能である。ｚ方向から視た接続部材９０の形状は、たとえば次の（Ａ）～（Ｃ）のように変更してもよい。
　（Ａ）図１２に示すように、接続部材９０は、ｙ方向において全ての第２半導体素子５０Ｂと対向する主対向壁９１と、ｘ方向の両端に配置された第２半導体素子５０Ｂのそれぞれに対してｘ方向において対向する端部対向壁９２と、を有している。図示された例においては、接続部材９０は、主対向壁９１と端部対向壁９２とが一体に形成された単一部品である。主対向壁９１は、ｙ方向において第２半導体素子５０Ｂと隣り合う位置に配置されており、ｘ方向に沿って延びている。端部対向壁９２は、主対向壁９１のｘ方向の両端部からｙ方向に沿って延びている。端部対向壁９２は、ｘ方向の両端に配置された第２半導体素子５０Ｂのそれぞれとｘ方向に隣り合う位置に配置されている。図示された例においては、端部対向壁９２は、ｘ方向から視て、第２半導体素子５０Ｂの全てと重なるように設けられている。
　この構成によれば、端部対向壁９２が省略された接続部材９０と比較して、接続部材９０の体積が増加することによって、各第２半導体素子５０Ｂが駆動している場合において各第２半導体素子５０Ｂの熱が接続部材９０に移動しやすくなる。なお、図１２に示す変更例において、接続部材９０は、主対向壁９１と、２個の端部対向壁９２のうちの少なくとも１つとが分離した状態となるように構成されてもよい。
　（Ｂ）図１３に示すように、接続部材９０は、ｙ方向において全ての第２半導体素子５０Ｂと対向する主対向壁９１と、ｘ方向において隣り合う第２半導体素子５０Ｂの間に配置された複数（図示された例では３個）の中間対向壁９３と、を有している。図示された例においては、接続部材９０は、主対向壁９１と中間対向壁９３とが一体に形成された単一部品である。主対向壁９１は、ｙ方向において第２半導体素子５０Ｂと隣り合う位置に配置されており、ｘ方向に沿って延びている。各中間対向壁９３は、主対向壁９１からｙ方向に沿って延びている。各中間対向壁９３は、ｘ方向において第２半導体素子５０Ｂと対向している。各中間対向壁９３は、ｘ方向から視て、第２半導体素子５０Ｂの全てと重なるように設けられている。
　この構成によれば、中間対向壁９３が省略された接続部材９０と比較して、接続部材９０の体積が増加することによって、各第２半導体素子５０Ｂが駆動している場合において各第２半導体素子５０Ｂの熱が接続部材９０に移動しやすくなる。なお、図１３に示す変更例において、接続部材９０は、主対向壁９１と、３個の中間対向壁９３のうちの少なくとも１つとが分離した状態となるように構成されてもよい。
　（Ｃ）図１４に示すように、接続部材９０は、ｙ方向において全ての第２半導体素子５０Ｂと対向する主対向壁９１と、ｘ方向の両端に配置された第２半導体素子５０Ｂのそれぞれに対してｘ方向において対向する端部対向壁９２と、ｘ方向において隣り合う第２半導体素子５０Ｂの間に配置された中間対向壁９３と、を有している。図示された例においては、接続部材９０は、主対向壁９１と端部対向壁９２と中間対向壁９３とが一体に形成された単一部品である。主対向壁９１は、ｙ方向において第２半導体素子５０Ｂと隣り合う位置に配置されており、ｘ方向に沿って延びている。端部対向壁９２は、主対向壁９１のｘ方向の両端部からｙ方向に沿って延びている。端部対向壁９２は、ｘ方向の両端に配置された第２半導体素子５０Ｂのそれぞれとｘ方向に隣り合う位置に配置されている。図示された例においては、端部対向壁９２は、ｘ方向から視て、第２半導体素子５０Ｂの全てと重なるように設けられている。各中間対向壁９３は、主対向壁９１からｙ方向に沿って延びている。各中間対向壁９３は、ｘ方向において第２半導体素子５０Ｂと対向している。各中間対向壁９３は、ｘ方向から視て、第２半導体素子５０Ｂの全てと重なるように設けられている。
　この構成によれば、端部対向壁９２および中間対向壁９３の少なくとも一方が省略された接続部材９０と比較して、接続部材９０の体積が増加することによって、各第２半導体素子５０Ｂが駆動している場合において各第２半導体素子５０Ｂの熱が接続部材９０に移動しやすくなる。
　なお、図１４に示す変更例において、接続部材９０は、主対向壁９１と、２個の端部対向壁９２のうちの少なくとも１つとが分離した状態となるように構成されてもよい。また接続部材９０は、主対向壁９１と、３個の中間対向壁９３のうちの少なくとも１つとが分離した状態となるように構成されてもよい。また接続部材９０は、主対向壁９１と、２個の端部対向壁９２のうちの少なくとも１つと、３個の中間対向壁９３のうちの少なくとも１つとが互いに分離した状態となるように構成されてもよい。
　なお、上記（Ａ）および（Ｃ）について、端部対向壁９２のｙ方向の長さは任意に変更可能である。一例では、端部対向壁９２は、ｘ方向から視て、第２半導体素子５０Ｂの一部と重なるように設けられていてもよい。また、端部対向壁９２は、ｚ方向から視て、ｙ方向において第２半導体素子５０Ｂよりも絶縁側面１２Ｂに向けてはみ出すように設けられてもよい。
　また、上記（Ｂ）および（Ｃ）について、中間対向壁９３のｙ方向の長さは任意に変更可能である。一例では、中間対向壁９３は、ｘ方向から視て、第２半導体素子５０Ｂの一部と重なるように設けられていてもよい。また、中間対向壁９３は、ｚ方向から視て、ｙ方向において第２半導体素子５０Ｂよりも絶縁側面１２Ｂに向けてはみ出すように設けられてもよい。
　・上記実施形態では、複数の第２半導体素子５０Ｂに対して共通の接続部材９０が設けられたが、これに限られない。たとえば、図１５に示すように、各第２半導体素子５０Ｂに対して１つの接続部材９０が設けられてもよい。各接続部材９０は、その接続部材９０と対応する第２半導体素子５０Ｂに対してｙ方向において対向するように配置されている。より詳細には、各接続部材９０は、その接続部材９０と対応する第２半導体素子５０Ｂとｙ方向において隣り合うように配置されている。
　・図１５の変更例において、第２半導体素子５０Ｂに対する接続部材９０の配置位置は任意に変更可能である。一例では、図１６に示すように、接続部材９０は、ｘ方向において隣り合う第２半導体素子５０Ｂの間に配置されてもよい。また接続部材９０は、複数の第２半導体素子５０Ｂのうちｘ方向の両端部に配置された第２半導体素子５０Ｂに対してｘ方向に隣り合う第２半導体素子５０Ｂとは反対側に配置されてもよい。つまり、接続部材９０は、ｘ方向の両端部に配置された第２半導体素子５０Ｂのｘ方向の両側に配置されている。ｚ方向から視て、接続部材９０は、ｙ方向に延びている。図示された例においては、接続部材９０は、ｘ方向から視て、第２半導体素子５０Ｂの全体と重なるように設けられている。
　・図１５の変更例において、各接続部材９０のｚ方向から視た形状は任意に変更可能である。一例では、図１７に示すように、各接続部材９０は、第２半導体素子５０Ｂをｘ方向の両側およびｙ方向から囲うように設けられてもよい。なお、各接続部材９０は、第２半導体素子５０Ｂをｘ方向の一方およびｙ方向から囲うように設けられてもよい。
　・図１５の変更例および図１７の変更例において、接続部材９０の個数は任意に変更可能である。一例では、２個の第２半導体素子５０Ｂに対して１個の接続部材９０が設けられてもよい。この場合、接続部材９０は、ｙ方向から視て、２個の第２半導体素子５０Ｂの全体と重なるように設けられることが好ましい。
　・図１６の変更例において、接続部材９０の個数は任意に変更可能である。一例では、図１６の複数の接続部材９０のうちｘ方向の両端部の接続部材９０を省略してもよい。また別例では、接続部材９０は、絶縁側面１３Ｂ寄りの２個の第２半導体素子５０Ｂのｘ方向の間と、絶縁側面１４Ｂ寄りの２個の第２半導体素子５０Ｂのｘ方向の間とのそれぞれに配置されてもよい。
　・上記実施形態では、接続部材９０は、接着剤によって第１駆動導電層２０Ａおよび第２駆動導電層２０Ｂのそれぞれに接続されていたが、これに限られない。たとえば図１８に示すように、接続部材９０と第１駆動導電層２０Ａとは、はんだやＡｇペースト等の第１導電性接合材ＪＣ１によって接合され、接続部材９０と第２駆動導電層２０Ｂとは、はんだやＡｇペースト等の第２導電性接合材ＪＣ２によって接合されてもよい。ここで、各導電性接合材ＪＣ１，ＪＣ２の熱伝導率は、接着剤の熱伝導率よりも高い。
　この構成によれば、接続部材９０と第１駆動導電層２０Ａおよび第２駆動導電層２０Ｂとが接着剤によって接続された構成と比較して、第２半導体素子５０Ｂの熱が第２駆動導電層２０Ｂから接続部材９０に移動しやすくなり、接続部材９０から第１駆動導電層２０Ａに移動しやすくなる。
　・上記実施形態では、接続部材９０は、ｙ方向が厚さ方向となる平板状のブロックからなる構成であったが、これに限られない。たとえば図１９に示すように、接続部材９０は、ｘ方向から視て略Ｓ字状となる薄板から構成されてもよい。接続部材９０は、たとえば電気絶縁性を有するスプリング材からなる。また接続部材９０は、導電性のスプリング材からなり、接続部材９０のうち少なくともｚ方向の両端部が絶縁被膜によって覆われた構成であってもよい。図示された例においては、接続部材９０は、第１駆動導電層２０Ａおよび第２駆動導電層２０Ｂによって圧縮された状態で第１駆動導電層２０Ａおよび第２駆動導電層２０Ｂに接触している。つまり、接続部材９０のｚ方向の両端部のうち第１駆動導電層２０Ａに近い方の端部は、第１駆動導電層２０Ａに向けて付勢されている。接続部材９０のｚ方向の両端部のうち第２駆動導電層２０Ｂに近い方の端部は、第２駆動導電層２０Ｂに向けて付勢されている。
　この構成によれば、接続部材９０と第１駆動導電層２０Ａおよび第２駆動導電層２０Ｂとが確実に接触するため、第２半導体素子５０Ｂの熱が第２駆動導電層２０Ｂから接続部材９０に移動しやすくなり、接続部材９０から第１駆動導電層２０Ａに移動しやすくなる。
　また図２０に示すように、接続部材９０は、複数本のスプリングプローブから構成されてもよい。図示された例においては、接続部材９０は、第１駆動導電層２０Ａに向けて付勢される構成である。接続部材９０と第２駆動導電層２０Ｂとは、はんだやＡｇペースト等の導電性接合材ＪＤによって接合されている。この構成によれば、接続部材９０と第１駆動導電層２０Ａとが確実に接触するため、第２半導体素子５０Ｂの熱が接続部材９０から第１駆動導電層２０Ａに移動しやすくなる。
　・上記実施形態では、接続部材９０が電気絶縁性を有する材料からなる構成であったが、これに限られない。たとえば接続部材９０は、Ｃｕ、Ａｌ等の金属材料からなる構成であってもよい。この場合、たとえば接続部材９０と第１駆動導電層２０Ａとを接続する接着剤と、接続部材９０と第２駆動導電層２０Ｂとを接続する接着剤とのそれぞれは、電気絶縁性を有する材料からなる。これにより、接続部材９０と第１駆動導電層２０Ａとが絶縁され、接続部材９０と第２駆動導電層２０Ｂとが絶縁される。
　・上記実施形態において、接続部材９０は、第２駆動配線２２とは異なる駆動配線に接続されてもよい。一例では、図２１に示すように、第１駆動導電層２０Ａは、第２駆動配線２２とは異なる駆動配線として、第３駆動配線２３を有していてもよい。第３駆動配線２３は、第２駆動配線２２と電気的に絶縁されており、ｙ方向において第２駆動配線２２と隙間を介して隣り合うように形成されている。図２２に示すように、第３駆動配線２３は、ｘ方向に延びている。第３駆動配線２３は、第２駆動配線２２の主配線部２２ａとｙ方向に離間し、接続配線部２２ｂとｘ方向に離間するように配置されている。この場合、接続部材９０は、導電性を有する材料、たとえば金属材料から構成されてもよい。
　・上記実施形態では、接続部材９０は、第１駆動導電層２０Ａおよび第２駆動導電層２０Ｂに接続されていたが、これに限られない。接続部材９０は、第１駆動導電層２０Ａに代えて第１絶縁部材１０Ａの第１絶縁主面１０Ａｓに接続されてもよいし、第２駆動導電層２０Ｂに代えて第２絶縁部材１０Ｂの第２絶縁主面１０Ｂｓに接続されてもよい。一例では、図２３に示すように、接続部材９０は、第１絶縁部材１０Ａの第１絶縁主面１０Ａｓに接続されており、第２絶縁部材１０Ｂの第２絶縁主面１０Ｂｓに接続されている。
　図２４に示すように、第２駆動導電層２０Ｂのうち接続部材９０が配置される部分には、貫通孔２４が形成されている。貫通孔２４は、ｚ方向において第２駆動導電層２０Ｂを貫通している。接続部材９０は、貫通孔２４に挿通されて第２絶縁部材１０Ｂの第２絶縁主面１０Ｂｓに接続されている。
　また、接続部材９０は、第１駆動導電層２０Ａおよび第１絶縁部材１０Ａの第１絶縁主面１０Ａｓに跨って接続されてもよく、第２駆動導電層２０Ｂおよび第２絶縁部材１０Ｂの第２絶縁主面１０Ｂｓに跨って接続されてもよい。
　このように、接続部材９０は、第１駆動導電層２０Ａおよび第１絶縁部材１０Ａの第１絶縁主面１０Ａｓのうちの少なくとも一方と、第２駆動導電層２０Ｂおよび第２絶縁部材１０Ｂの第２絶縁主面１０Ｂｓのうちの少なくとも一方一方とに接続されていればよい。接続部材９０が第１絶縁部材１０Ａの第１絶縁主面１０Ａｓまたは第２絶縁部材１０Ｂの第２絶縁主面１０Ｂｓに接続される場合、たとえば接続部材９０を、導電性を有する材料、たとえば金属材料から構成されてもよい。
　・上記実施形態において、第１接続層６０Ａおよび第２接続層６０Ｂの構成は任意に変更可能である。一例では、各接続層６０Ａ，６０Ｂは、はんだやＡｇペースト等の導電性接合材から構成されてもよい。この場合、第１接続層６０Ａのｚ方向の両端部に形成される各導電性接合材ＪＡ１，ＪＡ２を含めて、第１半導体素子５０Ａと第２駆動導電層２０Ｂとを接続する第１接続層を構成する。また、第２接続層６０Ｂのｚ方向の両端部に形成される各導電性接合材ＪＢ１，ＪＢ２を含めて、第２半導体素子５０Ｂと第１駆動導電層２０Ａ（第２駆動配線２２）とを接続する第２接続層を構成する。
　・上記実施形態において、第１制御用端子８４Ａおよび第１検出用端子８５Ａはそれぞれ、樹脂側面７４からｘ方向に突出してもよい。また第２制御用端子８４Ｂおよび第２検出用端子８５Ｂはそれぞれ、樹脂側面７３からｘ方向に突出してもよい。
　・上記実施形態において、制御用配線４１Ａおよび検出用配線４２Ａのそれぞれの配置位置は任意に変更可能である。一例では、検出用配線４２Ａが制御用配線４１Ａよりも第２駆動配線２２の主配線部２２ａの近くに配置されてもよい。
　・上記実施形態において、ｚ方向から視た制御用配線４１Ａおよび検出用配線４２Ａの形状はそれぞれ任意に変更可能である。一例では、制御用配線４１Ａおよび検出用配線４２Ａのうち少なくとも一方について、第２駆動配線２２と絶縁側面１２Ａとのｙ方向の間に配置された部分を省略してもよい。
　・上記実施形態において、制御用配線４１Ｂおよび検出用配線４２Ｂのそれぞれの配置位置は任意に変更可能である。一例では、検出用配線４２Ｂが制御用配線４１Ｂよりも第２駆動導電層２０Ｂの近くに配置されてもよい。
　・上記実施形態において、第２駆動導電層２０Ｂの構成は任意に変更可能である。一例では、第２駆動導電層２０Ｂは、各第１半導体素子５０Ａが接続された第１導電部と、各第２半導体素子５０Ｂが接続された第２導電部とに分割された構成であってもよい。この場合、第１導電部と第２導電部とは、導電性の連結部材によって接続されていてもよい。
　・上記実施形態において、第１半導体素子５０Ａおよび第２半導体素子５０Ｂの数は任意に変更可能である。第１半導体素子５０Ａおよび第２半導体素子５０Ｂの数はそれぞれ、半導体装置１の特性に応じて、１個～３個、または５個以上であってもよい。
　・上記実施形態において、第１接続層６０Ａおよび第２接続層６０Ｂを省略してもよい。この場合、第１半導体素子５０Ａは、第２駆動導電層２０Ｂと直接的に接続される。第２半導体素子５０Ｂは、第１駆動導電層２０Ａの第２駆動配線２２と直接的に接続される。なお、第１半導体素子５０Ａは、はんだやＡｇペースト等の導電性接合材を介して第２駆動導電層２０Ｂと接続されてもよいし、第２駆動導電層２０Ｂと接触した状態で第２駆動導電層２０Ｂと接続されてもよい。また、第２半導体素子５０Ｂは、はんだやＡｇペースト等の導電性接合材を介して第１駆動導電層２０Ａの第２駆動配線２２と接続されてもよいし、第２駆動配線２２と接触した状態で第２駆動配線２２と接続されてもよい。
　・上記実施形態において、第１半導体素子５０Ａと第１駆動導電層２０Ａの第１駆動配線２１との間の接合材ＪＡを省略してもよい。この場合、第１半導体素子５０Ａは、第１駆動配線２１と接触した状態で第１駆動配線２１と接続されている。
　・上記実施形態において、第２半導体素子５０Ｂと第２駆動導電層２０Ｂとの間の接合材ＪＢを省略してもよい。この場合、第２半導体素子５０Ｂは、第２駆動導電層２０Ｂと接触した状態で第２駆動導電層２０Ｂに接続されている。
　・上記実施形態では、第１半導体素子５０Ａが第２半導体素子５０Ｂよりも第１絶縁部材１０Ａ寄りに配置されており、第２半導体素子５０Ｂが第１半導体素子５０Ａよりも第２絶縁部材１０Ｂ寄りに配置されていたが、これに限られない。たとえば、第１半導体素子５０Ａおよび第２半導体素子５０Ｂはそれぞれ、第１絶縁部材１０Ａと第２絶縁部材１０Ｂとのｚ方向の間の中央に配置されてもよい。第１半導体素子５０Ａおよび第２半導体素子５０Ｂをそれぞれ、第１絶縁部材１０Ａと第２絶縁部材１０Ｂとのｚ方向の間の中央に配置する構成としては、たとえば、接合材ＪＡ，ＪＢや各接続層６０Ａ，６０Ｂを省略する構成と、第１駆動配線２１の厚さおよび第２駆動導電層２０Ｂの厚さを厚くする構成とが挙げられる。
　・上記実施形態において、第１半導体素子５０Ａおよび第２半導体素子５０Ｂの構成はそれぞれ任意に変更可能である。一例では、第１半導体素子５０Ａの第１素子主面５０Ａｓにドレイン電極５１Ａ、ソース電極５２Ａおよびゲート電極５３Ａが形成されてもよい。この場合、ドレイン電極５１Ａは、ワイヤまたは帯状の接続部材によって第１駆動導電層２０Ａの第１駆動配線２１と接続されている。また、第２半導体素子５０Ｂの第２素子主面５０Ｂｓにドレイン電極５１Ｂ、ソース電極５２Ｂおよびゲート電極５３Ｂが形成されてもよい。この場合、ドレイン電極５１Ｂは、ワイヤまたは帯状の接続部材によって第２駆動導電層２０Ｂと接続されている。
　・上記実施形態において、各半導体素子５０Ａ，５０Ｂは、ダイオード等のスイッチング素子以外の半導体素子であってもよい。
　１…半導体装置
　１０Ａ…第１絶縁部材
　１０Ａｓ…第１絶縁主面
　１０Ａｒ…第１絶縁裏面
　１０Ｂ…第２絶縁部材
　１０Ｂｓ…第２絶縁主面
　１０Ｂｒ…第２絶縁裏面
　２０Ａ…第１駆動導電層
　２１…第１駆動配線
　２２…第２駆動配線
　２３…第３駆動配線
　２０Ｂ…第２駆動導電層
　４０Ｂ…制御導電層
　６０Ａ…第１接続層
　６０Ｂ…第２接続層
　５０Ａ…第１半導体素子
　５０Ａｓ…第１素子主面
　５０Ａｒ…第１素子裏面
　５１Ａ…ドレイン電極（第１裏面側駆動電極）
　５２Ａ…ソース電極（第１主面側駆動電極）
　５０Ｂ…第２半導体素子
　５０Ｂｓ…第２素子主面
　５０Ｂｒ…第２素子裏面
　５１Ｂ…ドレイン電極（第２裏面側駆動電極）
　５２Ｂ…ソース電極（第２主面側駆動電極）
　７０…封止樹脂
　９０…接続部材
　９２…端部対向壁（複数の第２半導体素子のうち第２方向の両端の第２半導体素子の一方を第２方向から取り囲む部分）
　９３…中間対向壁（複数の第２半導体素子のうち第２方向において隣り合う第２半導体素子の間に位置する部分）
　２００…冷却器

Claims (19)

  1. 　厚さ方向において互いに反対側を向く第１絶縁主面および第１絶縁裏面を有しており、前記第１絶縁裏面が露出した第１絶縁部材と、
    　前記第１絶縁主面上に設けられた第１駆動導電層と、
    　前記第１駆動導電層に搭載された第１半導体素子と、
    　前記厚さ方向において互いに反対側を向く第２絶縁主面および第２絶縁裏面を有しており、前記第２絶縁裏面が露出し、前記第２絶縁主面が前記第１絶縁主面と前記厚さ方向において対向するように前記第１絶縁部材に対して前記厚さ方向に離間して配置された第２絶縁部材と、
    　前記第２絶縁主面上に設けられた第２駆動導電層と、
    　前記第２駆動導電層に搭載された第２半導体素子と、
    　前記第１絶縁部材および前記第１駆動導電層のうちの少なくとも一方と、前記第２絶縁部材および前記第２駆動導電層のうちの少なくとも一方との間に伝熱経路を形成する接続部材と、
    　前記第１半導体素子、前記第２半導体素子および前記接続部材を封止する封止樹脂と、を備え、
    　前記接続部材の熱伝導率は、前記封止樹脂の熱伝導率よりも高い
    　半導体装置。
  2. 　前記接続部材は、前記第２駆動導電層と接続している
    　請求項１に記載の半導体装置。
  3. 　前記厚さ方向から視て、前記接続部材は、前記第１半導体素子よりも前記第２半導体素子の近くに配置されている
    　請求項１または２に記載の半導体装置。
  4. 　前記第１半導体素子は、前記厚さ方向において互いに反対側を向く第１素子主面および第１素子裏面を有しており、前記第１素子裏面が前記第１駆動導電層と前記厚さ方向に対向するように配置されており、
    　前記第１素子裏面には、第１裏面側駆動電極が設けられており、
    　前記第１素子主面には、第１主面側駆動電極が設けられており、
    　前記第２半導体素子は、前記厚さ方向において互いに反対側を向く第２素子主面および第２素子裏面を有しており、前記第２素子裏面が前記第２駆動導電層と前記厚さ方向に対向するように配置されており、
    　前記第２素子裏面には、第２裏面側駆動電極が設けられており、
    　前記第２素子主面には、第２主面側駆動電極が設けられている
    　請求項１～３のいずれか一項に記載の半導体装置。
  5. 　前記第１駆動導電層は、第１駆動配線および第２駆動配線を有しており、
    　前記第１半導体素子は、前記第１裏面側駆動電極が前記第１駆動配線に電気的に接続されるように前記第１駆動配線に搭載されている
    　請求項４に記載の半導体装置。
  6. 　前記第２半導体素子は、前記第２裏面側駆動電極が前記第２駆動導電層に電気的に接続されるように前記第２駆動導電層に搭載されており、
    　前記厚さ方向において前記第２半導体素子と前記第２駆動配線とが互いに離間した状態で対向しており、
    　前記第２半導体素子と前記第２駆動配線との間には、前記第２主面側駆動電極と前記第２駆動配線とを電気的に接続する第２接続層が設けられている
    　請求項５に記載の半導体装置。
  7. 　前記厚さ方向において前記第１半導体素子と前記第２駆動導電層とが互いに離間した状態で対向しており、
    　前記第１半導体素子と前記第２駆動導電層との間には、前記第１主面側駆動電極と前記第２駆動導電層とを電気的に接続する第１接続層が設けられている
    　請求項６に記載の半導体装置。
  8. 　前記厚さ方向と直交する方向のうち互いに直交する２方向を第１方向および第２方向とすると、
    　前記第１駆動導電層は、前記第１方向において前記第２駆動配線と隣り合うように形成された第３駆動配線を有しており、
    　前記第３駆動配線は、前記第２駆動配線と電気的に絶縁されており、
    　前記接続部材は、前記第３駆動配線と前記第２駆動導電層とを接続している
    　請求項５～７のいずれか一項に記載の半導体装置。
  9. 　前記接続部材は、電気絶縁性を有する材料からなり、前記第１駆動配線と前記第２駆動導電層とを接続している
    　請求項５～７のいずれか一項に記載の半導体装置。
  10. 　前記第１半導体素子および前記第２半導体素子はそれぞれ、複数個設けられており、
    　前記厚さ方向と直交する方向のうち互いに直交する２方向を第１方向および第２方向とすると、
    　前記複数の第１半導体素子は、前記第１方向において互いに同じ位置で前記第２方向において互いに離間して配列されており、
    　前記複数の第２半導体素子は、前記第１方向において互いに同じ位置で前記第２方向において互いに離間して配列されており、
    　前記複数の第１半導体素子および前記複数の第２半導体素子は、前記第１方向において互いに離間して配置されており、
    　前記厚さ方向から視て、前記接続部材は、前記第２方向に向けて延びている
    　請求項５～９のいずれか一項に記載の半導体装置。
  11. 　前記接続部材は、前記第１方向から視て、前記複数の第２半導体素子の全てと重なるように配置されている
    　請求項１０に記載の半導体装置。
  12. 　前記接続部材は、前記第１方向において前記複数の第２半導体素子の全てと隣り合うように配置されている
    　請求項１１に記載の半導体装置。
  13. 　前記第１方向における前記接続部材の大きさは、前記第１方向における前記第２半導体素子の大きさよりも小さい
    　請求項１０～１２のいずれか一項に記載の半導体装置。
  14. 　前記接続部材は、前記複数の第２半導体素子のうち前記第２方向の両端の第２半導体素子の一方を前記第２方向から取り囲む部分を有している
    　請求項１０～１３のいずれか一項に記載の半導体装置。
  15. 　前記接続部材は、前記複数の第２半導体素子のうち前記第２方向において隣り合う第２半導体素子の間に位置する部分を有している
    　請求項１０～１４のいずれか一項に記載の半導体装置。
  16. 　前記接続部材は、スプリング材を含む
    　請求項１～１３のいずれか一項に記載の半導体装置。
  17. 　前記接続部材は、１または複数の柱状のスプリングプローブを含む
    　請求項１～１３のいずれか一項に記載の半導体装置。
  18. 　前記第２絶縁主面上に設けられた制御導電層を有しており、
    　前記厚さ方向から視て、前記接続部材は、前記第２半導体素子に対して前記制御導電層とは反対側に配置されている
    　請求項１～１７のいずれか一項に記載の半導体装置。
  19. 　前記第１絶縁部材および前記第２絶縁部材はそれぞれ、セラミックスからなる
    　請求項１～１８のいずれか一項に記載の半導体装置。
PCT/JP2020/048436 2020-01-21 2020-12-24 半導体装置 WO2021149452A1 (ja)

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Publication number Priority date Publication date Assignee Title
JP2004303900A (ja) * 2003-03-31 2004-10-28 Denso Corp 半導体装置
JP2013179229A (ja) * 2012-02-29 2013-09-09 Rohm Co Ltd パワーモジュール半導体装置
JP2014204006A (ja) * 2013-04-05 2014-10-27 三菱電機株式会社 電力用半導体装置
JP2015170605A (ja) * 2014-03-04 2015-09-28 ローム株式会社 半導体装置および半導体装置の製造方法
JP2016039206A (ja) * 2014-08-06 2016-03-22 トヨタ自動車株式会社 半導体装置の製造方法及び同半導体装置
US20180240731A1 (en) * 2017-02-22 2018-08-23 Jmj Korea Co., Ltd. Semiconductor package having double-sided heat dissipation structure

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004303900A (ja) * 2003-03-31 2004-10-28 Denso Corp 半導体装置
JP2013179229A (ja) * 2012-02-29 2013-09-09 Rohm Co Ltd パワーモジュール半導体装置
JP2014204006A (ja) * 2013-04-05 2014-10-27 三菱電機株式会社 電力用半導体装置
JP2015170605A (ja) * 2014-03-04 2015-09-28 ローム株式会社 半導体装置および半導体装置の製造方法
JP2016039206A (ja) * 2014-08-06 2016-03-22 トヨタ自動車株式会社 半導体装置の製造方法及び同半導体装置
US20180240731A1 (en) * 2017-02-22 2018-08-23 Jmj Korea Co., Ltd. Semiconductor package having double-sided heat dissipation structure

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