WO2021124810A1 - パッシベーション膜の製造方法 - Google Patents
パッシベーション膜の製造方法 Download PDFInfo
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- WO2021124810A1 WO2021124810A1 PCT/JP2020/043674 JP2020043674W WO2021124810A1 WO 2021124810 A1 WO2021124810 A1 WO 2021124810A1 JP 2020043674 W JP2020043674 W JP 2020043674W WO 2021124810 A1 WO2021124810 A1 WO 2021124810A1
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- Prior art keywords
- passivation
- gas
- oxygen
- substrate
- film
- Prior art date
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- 238000002161 passivation Methods 0.000 title claims abstract description 105
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims abstract description 8
- 239000007789 gas Substances 0.000 claims abstract description 56
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 150000001875 compounds Chemical class 0.000 claims abstract description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000001301 oxygen Substances 0.000 claims abstract description 18
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 18
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 17
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 17
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 16
- 239000011733 molybdenum Substances 0.000 claims abstract description 16
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910000037 hydrogen sulfide Inorganic materials 0.000 claims abstract description 10
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 10
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 4
- 125000004434 sulfur atom Chemical group 0.000 claims abstract description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 19
- 229910001882 dioxygen Inorganic materials 0.000 claims description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 230000000052 comparative effect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000011261 inert gas Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 4
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- 150000004770 chalcogenides Chemical class 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000005011 time of flight secondary ion mass spectroscopy Methods 0.000 description 2
- 238000002042 time-of-flight secondary ion mass spectrometry Methods 0.000 description 2
- 229910003185 MoSx Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- VDNSGQQAZRMTCI-UHFFFAOYSA-N sulfanylidenegermanium Chemical compound [Ge]=S VDNSGQQAZRMTCI-UHFFFAOYSA-N 0.000 description 1
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28247—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
Definitions
- the present invention relates to a method for producing a passivation film.
- semiconductor materials containing elements other than silicon have been attracting attention.
- the semiconductor material containing an element other than silicon include a semiconductor material containing a group III-V element such as germanium (Ge) and indium gallium arsenide (InGaAs), and molybdenum sulfide (IV) (MoS 2 ).
- Examples thereof include semiconductor materials containing metal chalcogenides.
- Patent literature method for forming a passivation film is proposed using a hydrogen sulfide (H 2 S) gas on a substrate such as molybdenum 1).
- a method for forming a metal chalcogenide a method of treating a molybdenum oxide layer and a tungsten oxide layer with hydrogen sulfide gas to form a molybdenum sulfide layer and a tungsten sulfide layer has been proposed (see, for example, Patent Document 2). ).
- An object of the present invention is to provide a method for producing a passivation film capable of producing a passivation film having a low concentration of oxygen atoms with good reproducibility.
- one aspect of the present invention is as follows [1] to [5].
- a substrate having at least one of germanium and molybdenum on the surface is treated with a passion gas containing an oxygen-containing compound which is a compound having an oxygen atom in the molecule and hydrogen sulfide, and a passion film containing a sulfur atom.
- a passivation step of forming on the surface of the substrate is provided with a passivation step of forming on the surface of the substrate.
- a method for producing a passivation film in which the concentration of the oxygen-containing compound in the passivation gas is 0.001 molppm or more and less than 75 molppm.
- [2] The method for producing a passivation film according to [1], wherein the concentration of the oxygen-containing compound in the passivation gas is 0.5 mol ppm or more and 65 mol ppm or less.
- [3] The method for producing a passivation film according to [1] or [2], wherein the oxygen-containing compound is at least one of oxygen gas and water.
- [4] The method for producing a passivation film according to any one of [1] to [3], wherein the substrate has a film containing at least one of germanium and molybdenum on its surface.
- a substrate having at least one of germanium and molybdenum on the surface is treated with a passivation gas containing an oxygen-containing compound which is a compound having an oxygen atom in the molecule and hydrogen sulfide. Therefore, a passivation step of forming a passivation film containing a sulfur atom on the surface of the substrate is provided.
- the concentration of the oxygen-containing compound in the passivation gas is 0.001 molppm or more and less than 75 molppm.
- a stable sulfide film can be produced while suppressing the formation of an unintended oxide film, so that a passivation film having a low oxygen atom concentration can be produced with good reproducibility. It is possible.
- the concentration of the oxygen-containing compound in the passivation gas is 0.001 molppm or more and 75 molppm or more.
- the upper limit is preferably 65 mol ppm or less, more preferably 40 mol ppm or less, further preferably 5 mol ppm or less, and the lower limit is 0.5 mol ppm. It may be the above.
- oxygen-containing compound is not particularly limited, but for example, oxygen gas (O 2 ), water (H 2 O), carbon monoxide (CO), carbon dioxide (CO 2 ), carbonyl sulfide (COS). , And sulfur dioxide (SO 2 ).
- oxygen gas O 2
- water H 2 O
- CO carbon monoxide
- CO 2 carbon dioxide
- COS carbonyl sulfide
- SO 2 sulfur dioxide
- the substrate treated with the passivation gas is a substrate having at least one of germanium and molybdenum on the surface, but the form in which the surface of the substrate has at least one of germanium and molybdenum is not particularly limited.
- the substrate may have a film on its surface containing at least one of germanium and molybdenum.
- the substrate having a film containing at least one of germanium and molybdenum on the surface may be any substrate as long as the film contains at least one of germanium and molybdenum.
- the substrate used for formation is suitable.
- a single crystal silicon substrate in which a film containing at least one of germanium and molybdenum is deposited on the surface by physical vapor deposition (PVD) or chemical vapor deposition (CVD) is preferable.
- the concentration of hydrogen sulfide in the passivation gas is not particularly limited as long as it is an amount sufficient for forming the passivation film, but it is preferably 1% by volume or more, and more preferably 2% by volume or more. It is preferably 10% by volume or more, more preferably 100% by volume or more.
- the components other than the hydrogen sulfide and oxygen-containing compounds among the components contained in the passivation gas are not particularly limited, and examples thereof include inert gases such as nitrogen gas and argon gas.
- the pressure when the substrate is treated with the passivation gas in the passivation step is not particularly limited, but is preferably 1 Pa or more and 101 kPa or less, and is preferably 10 Pa. It is more preferably 90 kPa or more, and further preferably 100 Pa or more and 80 kPa or less.
- the temperature at which the substrate is treated with the passivation gas in the passivation step is not particularly limited, but the surface of the substrate surface treated with the passivation gas is highly in-plane. In order to obtain uniformity, it is preferably 20 ° C. or higher and 1500 ° C. or lower, more preferably 50 ° C. or higher and 1200 ° C. or lower, and further preferably 100 ° C. or higher and 1000 ° C. or lower.
- the length of time for treating the substrate with the passivation gas in the passivation step is not particularly limited, but is preferably 120 minutes or less in consideration of the efficiency of the semiconductor device manufacturing process.
- the time for treating the substrate with the passivation gas is the time required to supply the passivation gas to the chamber containing the substrate and then to finish the treatment of the surface of the substrate with the passivation gas by using a vacuum pump or the like. Refers to the time until exhaust.
- the method for producing a passivation film according to the present embodiment can be suitably applied to a semiconductor film forming apparatus for forming a passivation film on the surface of a substrate.
- the structure of this film forming apparatus is not particularly limited, and the positional relationship between the substrate housed in the chamber, which is the reaction vessel, and the piping connected to the chamber is not particularly limited.
- Example 1 A passivation film was formed on the surface of the substrate using the film forming apparatus 1 shown in FIG.
- the film forming apparatus 1 includes a chamber 10 for performing a passivation step and a temperature adjusting device (not shown) for adjusting the temperature inside the chamber 10. Inside the chamber 10, a stage 11 for supporting the sample 20 is provided.
- a silicon oxide film having a thickness of 150 nm was formed on a silicon substrate, and a germanium film having a thickness of 80 nm was further formed on the silicon oxide film.
- a passage gas air supply pipe 12 for supplying a passage gas containing an oxygen-containing compound and hydrogen sulfide to the chamber 10 and an inert gas supply pipe 12 for supplying an inert gas to the chamber 10 are provided.
- the air pipe 13 is connected via valves 32 and 33, respectively.
- an exhaust pipe 15 for discharging the gas in the chamber 10 to the outside is connected to the downstream side of the chamber 10, and a vacuum pump 38 is connected to the downstream side of the exhaust pipe 15 via a valve 35. It is connected.
- the pressure inside the chamber 10 is controlled by the pressure controller 37 that controls the valve 35.
- the passivation process was performed using such a film forming apparatus 1.
- the sample 20 was placed on the stage 11, the pressure in the chamber 10 was reduced to less than 10 Pa, and then the temperature in the chamber 10 was raised to 800 ° C. After that, the valve 32 was opened, and the passivation gas was supplied into the chamber 10 from the passivation gas air supply pipe 12 at a pressure of 101 kPa.
- This passivation gas is a mixed gas of oxygen gas and hydrogen sulfide gas, and the concentration of oxygen gas in the passivation gas is 60 mol ppm.
- the flow rate of the passivation gas at this time was 100 sccm, and the pressure in the chamber 10 when the passivation film was formed on the surface of the sample 20 was 67 kPa.
- sccm represents a flow rate (mL / min) at 0 ° C. and 101.3 kPa.
- the passivation gas was introduced for 30 minutes, and the surface of the sample 20 was sulphurized under the conditions of a temperature of 800 ° C. and a pressure of 67 kPa to form a passivation film, and then the introduction of the passivation gas was stopped. Then, the inside of the chamber 10 was evacuated by the vacuum pump 38, and nitrogen gas, which is an inert gas, was supplied into the chamber 10 from the inert gas air supply pipe 13, and the inside of the chamber 10 was replaced with the nitrogen gas. Then, the temperature in the chamber 10 was lowered to room temperature, and the sample 20 on which the passivation film was formed was taken out from the chamber 10.
- nitrogen gas which is an inert gas
- Example 2 A passivation film was formed on the surface of the substrate in the same manner as in Example 1 except that the concentration of oxygen gas in the passivation gas was 30 mol ppm.
- Example 3 A passivation film was formed on the surface of the substrate in the same manner as in Example 1 except that the concentration of oxygen gas in the passivation gas was 3.8 mol ppm.
- Example 4 A passivation film was formed on the surface of the substrate in the same manner as in Example 1 except that the concentration of oxygen gas in the passivation gas was 0.75 mol ppm.
- Example 1 A passivation film was formed on the surface of the substrate in the same manner as in Example 1 except that the concentration of oxygen gas in the passivation gas was 75 mol ppm.
- Comparative Example 2 A passivation film was formed on the surface of the substrate in the same manner as in Example 1 except that the concentration of oxygen gas in the passivation gas was 150 mol ppm.
- Example 5 As the sample 20, a substrate having a silicon oxide film having a thickness of 150 nm formed on the silicon substrate and a molybdenum film having a thickness of 80 nm formed on the silicon substrate was used in the same manner as in Example 1. A passivation film was formed on the surface of the silicon. (Example 6) A passivation film was formed on the surface of the substrate in the same manner as in Example 5 except that the concentration of oxygen gas in the passivation gas was 30 mol ppm.
- Example 7 A passivation film was formed on the surface of the substrate in the same manner as in Example 5 except that the concentration of oxygen gas in the passivation gas was 3.8 mol ppm.
- Example 8 A passivation film was formed on the surface of the substrate in the same manner as in Example 5 except that the concentration of oxygen gas in the passivation gas was 0.75 mol ppm.
- Example 3 A passivation film was formed on the surface of the substrate in the same manner as in Example 5 except that the concentration of oxygen gas in the passivation gas was 75 mol ppm.
- Comparative Example 4 A passivation film was formed on the surface of the substrate in the same manner as in Example 5 except that the concentration of oxygen gas in the passivation gas was 150 mol ppm.
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Abstract
Description
これらの半導体材料は、シリコン材料と比較してモビリティ(移動度)が高いというメリットを有しているものの、成膜が困難である場合や、材料間の界面の欠陥密度が高いことによりモビリティが低下する場合があった。
本発明は、酸素原子の濃度が低いパッシベーション膜を再現性良く製造することが可能なパッシベーション膜の製造方法を提供することを課題とする。
[1] ゲルマニウム及びモリブデンの少なくとも一方を表面に有する基板を、分子中に酸素原子を有する化合物である酸素含有化合物と硫化水素とを含有するパッシベーションガスで処理して、硫黄原子を含有するパッシベーション膜を前記基板の表面上に形成するパッシベーション工程を備え、
前記パッシベーションガス中の前記酸素含有化合物の濃度が0.001モルppm以上75モルppm未満であるパッシベーション膜の製造方法。
[3] 前記酸素含有化合物が酸素ガス及び水の少なくとも一方である[1]又は[2]に記載のパッシベーション膜の製造方法。
[4] 前記基板は、ゲルマニウム及びモリブデンの少なくとも一方を含有する膜を表面に有する[1]~[3]のいずれか一項に記載のパッシベーション膜の製造方法。
[5] 温度20℃以上1500℃以下、圧力1Pa以上101kPa以下の条件下で、前記基板を前記パッシベーションガスで処理する[1]~[4]のいずれか一項に記載のパッシベーション膜の製造方法。
意図しない酸化膜の生成を十分に抑制して、酸素原子の濃度が低いパッシベーション膜を再現性良く製造するためには、パッシベーションガス中の酸素含有化合物の濃度は0.001モルppm以上75モルppm未満とする必要があるが、上限は、65モルppm以下とすることが好ましく、40モルppm以下とすることがより好ましく、5モルppm以下とすることがさらに好ましく、下限は0.5モルppm以上であってもよい。なお、パッシベーションガス中の酸素含有化合物の濃度は低いほど好ましいが、0.001モルppmよりも低い濃度は測定が困難である。
(実施例1)
図1に示す成膜装置1を用いて、基板の表面にパッシベーション膜を成膜した。成膜装置1は、パッシベーション工程を行うチャンバー10と、チャンバー10の内部の温度を調整する温度調整装置(図示せず)と、を有する。チャンバー10の内部には、試料20を支持するステージ11が備えられている。試料20としては、シリコン基板上に厚さ150nmのシリコン酸化膜が形成され、さらにその上に厚さ80nmのゲルマニウム膜が形成されたものを使用した。
パッシベーションガス中の酸素ガスの濃度を30モルppmとした点以外は、実施例1と同様にして、基板の表面にパッシベーション膜を成膜した。
(実施例3)
パッシベーションガス中の酸素ガスの濃度を3.8モルppmとした点以外は、実施例1と同様にして、基板の表面にパッシベーション膜を成膜した。
(実施例4)
パッシベーションガス中の酸素ガスの濃度を0.75モルppmとした点以外は、実施例1と同様にして、基板の表面にパッシベーション膜を成膜した。
パッシベーションガス中の酸素ガスの濃度を75モルppmとした点以外は、実施例1と同様にして、基板の表面にパッシベーション膜を成膜した。
(比較例2)
パッシベーションガス中の酸素ガスの濃度を150モルppmとした点以外は、実施例1と同様にして、基板の表面にパッシベーション膜を成膜した。
試料20として、シリコン基板上に厚さ150nmのシリコン酸化膜が形成され、さらにその上に厚さ80nmのモリブデン膜が形成されたものを使用した点以外は、実施例1と同様にして、基板の表面にパッシベーション膜を成膜した。
(実施例6)
パッシベーションガス中の酸素ガスの濃度を30モルppmとした点以外は、実施例5と同様にして、基板の表面にパッシベーション膜を成膜した。
パッシベーションガス中の酸素ガスの濃度を3.8モルppmとした点以外は、実施例5と同様にして、基板の表面にパッシベーション膜を成膜した。
(実施例8)
パッシベーションガス中の酸素ガスの濃度を0.75モルppmとした点以外は、実施例5と同様にして、基板の表面にパッシベーション膜を成膜した。
パッシベーションガス中の酸素ガスの濃度を75モルppmとした点以外は、実施例5と同様にして、基板の表面にパッシベーション膜を成膜した。
(比較例4)
パッシベーションガス中の酸素ガスの濃度を150モルppmとした点以外は、実施例5と同様にして、基板の表面にパッシベーション膜を成膜した。
10・・・チャンバー
11・・・ステージ
12・・・パッシベーションガス給気用配管
13・・・不活性ガス給気用配管
15・・・排気用配管
20・・・試料
Claims (5)
- ゲルマニウム及びモリブデンの少なくとも一方を表面に有する基板を、分子中に酸素原子を有する化合物である酸素含有化合物と硫化水素とを含有するパッシベーションガスで処理して、硫黄原子を含有するパッシベーション膜を前記基板の表面上に形成するパッシベーション工程を備え、
前記パッシベーションガス中の前記酸素含有化合物の濃度が0.001モルppm以上75モルppm未満であるパッシベーション膜の製造方法。 - 前記パッシベーションガス中の前記酸素含有化合物の濃度が0.5モルppm以上65モルppm以下である請求項1に記載のパッシベーション膜の製造方法。
- 前記酸素含有化合物が酸素ガス及び水の少なくとも一方である請求項1又は請求項2に記載のパッシベーション膜の製造方法。
- 前記基板は、ゲルマニウム及びモリブデンの少なくとも一方を含有する膜を表面に有する請求項1~3のいずれか一項に記載のパッシベーション膜の製造方法。
- 温度20℃以上1500℃以下、圧力1Pa以上101kPa以下の条件下で、前記基板を前記パッシベーションガスで処理する請求項1~4のいずれか一項に記載のパッシベーション膜の製造方法。
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Publication number | Priority date | Publication date | Assignee | Title |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02141406A (ja) * | 1988-11-21 | 1990-05-30 | Japan Pionics Co Ltd | 硫化水素の精製方法 |
JPH0769782A (ja) * | 1992-07-08 | 1995-03-14 | Yeda Res & Dev Co Ltd | 遷移金属カルコゲニドの配向多結晶質薄膜 |
JP2007123895A (ja) * | 2005-10-26 | 2007-05-17 | Internatl Business Mach Corp <Ibm> | 方法および半導体構造(非酸素カルコゲン不活性化ステップを用いて製作されたGe系半導体構造) |
WO2017221594A1 (ja) * | 2016-06-22 | 2017-12-28 | 昭和電工株式会社 | 硫化水素混合物及びその製造方法並びに充填容器 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5958358A (en) * | 1992-07-08 | 1999-09-28 | Yeda Research And Development Co., Ltd. | Oriented polycrystalline thin films of transition metal chalcogenides |
KR100207789B1 (ko) | 1997-01-22 | 1999-07-15 | 윤종용 | 폴리건미러의 압착력유지장치 |
US5958816A (en) * | 1997-02-28 | 1999-09-28 | Tricat, Inc. | Method of presulfiding and passivating a hydrocarbon conversion catalyst |
JP2004536227A (ja) * | 2001-07-17 | 2004-12-02 | レール・リキード−ソシエテ・アノニム・ア・ディレクトワール・エ・コンセイユ・ドゥ・スールベイランス・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | 安定性増低濃度ガス、これを含む製品及びその製造方法 |
CN102698794B (zh) * | 2012-05-22 | 2014-07-16 | 韩钊武 | 一种煤焦油加氢复合催化剂的制备方法 |
US9558931B2 (en) * | 2012-07-27 | 2017-01-31 | Asm Ip Holding B.V. | System and method for gas-phase sulfur passivation of a semiconductor surface |
US9373516B2 (en) * | 2012-08-31 | 2016-06-21 | Applied Materials, Inc. | Method and apparatus for forming gate stack on Si, SiGe or Ge channels |
US9673038B2 (en) * | 2014-07-10 | 2017-06-06 | Tokyo Electron Limited | Gas phase oxide removal and passivation of germanium-containing semiconductors and compound semiconductors |
US9412605B2 (en) * | 2014-08-07 | 2016-08-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of removing oxide on semiconductor surface by layer of sulfur |
CN104762588B (zh) * | 2015-03-19 | 2018-03-13 | 中国石油化工股份有限公司青岛安全工程研究院 | 一种评估硫铁化合物钝化效果的方法 |
JP2016207789A (ja) * | 2015-04-20 | 2016-12-08 | 東京エレクトロン株式会社 | パッシベーション処理方法、半導体構造の形成方法及び半導体構造 |
US20170073812A1 (en) * | 2015-09-15 | 2017-03-16 | Ultratech, Inc. | Laser-assisted atomic layer deposition of 2D metal chalcogenide films |
US9982141B2 (en) * | 2016-01-06 | 2018-05-29 | King Fahd University Of Petroleum And Minerals | Corrosion resistant coating composition of Ni and a phosphate corrosion inhibitor and an electrodeposition method for the manufacture thereof |
US10727073B2 (en) * | 2016-02-04 | 2020-07-28 | Lam Research Corporation | Atomic layer etching 3D structures: Si and SiGe and Ge smoothness on horizontal and vertical surfaces |
US10410943B2 (en) * | 2016-10-13 | 2019-09-10 | Asm Ip Holding B.V. | Method for passivating a surface of a semiconductor and related systems |
US11469079B2 (en) * | 2017-03-14 | 2022-10-11 | Lam Research Corporation | Ultrahigh selective nitride etch to form FinFET devices |
US11270887B2 (en) * | 2017-09-27 | 2022-03-08 | Intel Corporation | Passivation layer for germanium substrate |
US10510883B2 (en) * | 2017-11-28 | 2019-12-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Asymmetric source and drain structures in semiconductor devices |
-
2020
- 2020-11-24 CN CN202080036949.0A patent/CN113840941A/zh active Pending
- 2020-11-24 JP JP2021565407A patent/JPWO2021124810A1/ja active Pending
- 2020-11-24 KR KR1020227009094A patent/KR20220046675A/ko not_active Application Discontinuation
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- 2020-11-24 US US17/612,783 patent/US20220246447A1/en active Pending
- 2020-12-04 TW TW109142762A patent/TWI804787B/zh active
-
2022
- 2022-02-13 IL IL290573A patent/IL290573A/en unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02141406A (ja) * | 1988-11-21 | 1990-05-30 | Japan Pionics Co Ltd | 硫化水素の精製方法 |
JPH0769782A (ja) * | 1992-07-08 | 1995-03-14 | Yeda Res & Dev Co Ltd | 遷移金属カルコゲニドの配向多結晶質薄膜 |
JP2007123895A (ja) * | 2005-10-26 | 2007-05-17 | Internatl Business Mach Corp <Ibm> | 方法および半導体構造(非酸素カルコゲン不活性化ステップを用いて製作されたGe系半導体構造) |
WO2017221594A1 (ja) * | 2016-06-22 | 2017-12-28 | 昭和電工株式会社 | 硫化水素混合物及びその製造方法並びに充填容器 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114350996A (zh) * | 2022-01-13 | 2022-04-15 | 郑州大学 | 一种镁锂合金表面钝化膜制备方法 |
CN114350996B (zh) * | 2022-01-13 | 2022-08-19 | 郑州大学 | 一种镁锂合金表面钝化膜制备方法 |
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JPWO2021124810A1 (ja) | 2021-06-24 |
CN113840941A (zh) | 2021-12-24 |
EP4080549A4 (en) | 2023-07-26 |
IL290573A (en) | 2022-04-01 |
KR20220046675A (ko) | 2022-04-14 |
TW202136544A (zh) | 2021-10-01 |
US20220246447A1 (en) | 2022-08-04 |
EP4080549A1 (en) | 2022-10-26 |
TWI804787B (zh) | 2023-06-11 |
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