WO2021052752A1 - Method for connecting a first electronic component with a second electronic component - Google Patents

Method for connecting a first electronic component with a second electronic component Download PDF

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Publication number
WO2021052752A1
WO2021052752A1 PCT/EP2020/074397 EP2020074397W WO2021052752A1 WO 2021052752 A1 WO2021052752 A1 WO 2021052752A1 EP 2020074397 W EP2020074397 W EP 2020074397W WO 2021052752 A1 WO2021052752 A1 WO 2021052752A1
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WO
WIPO (PCT)
Prior art keywords
electronic component
metal
electronic
bodies
metal bodies
Prior art date
Application number
PCT/EP2020/074397
Other languages
French (fr)
Inventor
Jacek Rudzki
Jan Lämmel
Stefan Behrendt
Ronald Eisele
Frank Osterwald
Original Assignee
Danfoss Silicon Power Gmbh
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Filing date
Publication date
Application filed by Danfoss Silicon Power Gmbh filed Critical Danfoss Silicon Power Gmbh
Publication of WO2021052752A1 publication Critical patent/WO2021052752A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
    • B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

Definitions

  • the invention relates to a method for connecting a first electronic component with a second electronic component, whereby an electrically conducting bond is formed between the first and the second electronic components by means of sintering a metallic sinter material that is disposed between the first electronic component and the second electronic component.
  • Sintering metal molded bodies to form a suitable connection area for connecting the former with wires or strips on a power semiconductor device, which is coated with precious metals, is possible with the use of a silver sintering paste.
  • precious metals is understood to refer to metals with a very low tendency to oxidize when they are exposed to ambient conditions and temperatures up to 300°C.
  • a silver sintering paste is located on the metal molded bodies that are loaded, together with the paste, on the precious metal of a performance semiconductor.
  • the metal layers are interconnected by means of a sintering process; silver molecules diffuse into the precious metals of the metal molded body and the metallization on the performance semiconductor.
  • non-precious metals such as, for example, aluminum
  • Fig. 1 shows a schematic sectional view of a first metal molded body 10 that is made of a non-precious metal, for example, aluminum, and that is bonded to a second metal molded body 40 by means of a sintered layer 30. Due to the oxide layer 20 that was formed via self-passivation, the electric conductivity and the quality of the bond between the first metallic mold body 10 and the second metallic mold body 40 is inadequate for industrial applications.
  • non-precious metals as known in the art, is therefore not a viable alternative for the use of precious metals intended for the purpose of forming metallic molded bodies.
  • the object of the present invention to provide a method for bonding semiconductor components without metallization and precious metals.
  • the invention proposes bonding semiconductor components with precious metals even without metallization, by means of sintering processes.
  • the semiconductor components accordingly, have aluminum or aluminum alloys on the top side of their connection areas, wherein the passively formed oxide layer is perforated by the application of another metal.
  • Said perforation of the oxide layer can be achieved by providing an energy input, such as, for example, movement or the application of ultrasound at an elevated temperature and/or elevated pressure, if need be, while simultaneously removing oxygen, whereby a diffusion with adhesion is initiated.
  • the sintering process is preceded by a preparatory process relative to the surfaces with oxide adhesions, whereby an additional metal is applied to said surfaces.
  • this can be achieved, for example, with the use of a wire bonding process.
  • the combination of pressure, heat and/or ultrasound during the bonding process causes a perforation of the oxide layer on the non-precious metal, whereby an inter-metallic phase is created between the metals. This way, a bond with good electric conductivity is obtained.
  • this process can also be initiated with areal coverage or a plurality of dots on the connection area simultaneously.
  • a sintering paste with high diffusion potential is then applied, the bonding metal is loaded, and the sintering process is started. Based on the multiple, localized perforations of the metallic layer by means of the additional metal, the sintering paste can create metallic bonds with the bonding partners.
  • metallic bonding feet or ball bonds are applied to the aluminum surface of a performance semiconductor using wire bond processes (e.g., thermosonic bonding).
  • wire bond processes e.g., thermosonic bonding
  • Gold wire for example, is a suitable wire that is already in use in the microelectronics industry for creating successful bonds with aluminum.
  • Ball bonds can be executed and result in so-called gold bumps on the aluminum.
  • the method that envisions only the bonding of balls, without creating wire bridges or wire loops, is also known in the art as the Au-stud-bumping method.
  • a plurality of bonding feet (gold bumps) is distributed across the area of the aluminum that is to be bonded.
  • a sintering phase is applied to the aluminum surface and the gold bumps, and a sinter process is performed.
  • the purpose for providing the bonding feet on the aluminum body lies in achieving better bonding action of the sinter layer to the aluminum.
  • the molecules of the sintering paste can now diffuse to the gold without any interfering oxide layers. Due to the bonding process that perforates the oxide layer of the aluminum, the diffusion processes can now act all the way down to the aluminum. Moreover, the diffusion zone also expands laterally resulting in a, for the most part, areal bond of the sintered connection. This means that, aside from the localized perforation of the aluminum oxide at the gold bumps, the sinter capacity in adjacent areas can also be improved.
  • Another possibility for penetrating the aluminum oxide is the option of bonding a wire, such as, for example, copper wire, via the ultrasound process on the aluminum surface of the chip.
  • a wire such as, for example, copper wire
  • the weld points are evenly distributed over the entire chip area.
  • a sinter layer is applied, for example, to the area that was bonded with copper wire, wherein the height of the sinter layer is greater than the height of the bond wires.
  • the sinter layer can be sintered with or without pressure. After sintering, the bond surfaces and the wires form a contact point with the sinter layer.
  • the thickness of the bond wires is chosen in such a manner that the non-precious metallization is not damaged.
  • the use of thin wires is recommended.
  • the number of bond surfaces is preferably chosen accordingly to provide the necessary amperage without overloading the bond surfaces.
  • the number of bond surfaces is to be chosen accordingly to guarantee a mechanical connection of adequate quality.
  • a further embodiment is based on sintering a pad of silver powder onto the non-precious metal surface of the semiconductor component by means of ultrasound welding and/or friction welding. Ultrasound and/or friction energy is used to remove the interfering oxide layer. As a result, the silver sinter pad is diffused into the non-precious metal and forms a stable inter-metallic phase.
  • silver powder depositories are applied to the non-precious metallization forming a pattern.
  • the silver depositories are compressed by means of ultrasound welding or friction welding and sintered at a corresponding temperature.
  • the sintered pad removes the oxide layer and diffuses into the non-precious metal.
  • Silver pads prepared in this manner are suitable as sinterable surfaces for the subsequent sinter processes, as described in the preceding examples.
  • a method for connecting a first electronic component with a second electronic component whereby an electrically conducting bond is formed between the first and the second electronic components by means of sintering a metallic sinter material that is disposed between the first electronic component and the second electronic component including these steps: fastening at least a plurality of metal bodies that are distributed across the area of the surface of one of the electronic components, while maintaining the clearances that are disposed between the metal bodies on the electronic component, or fastening a metal body that extends in one plane on the electronic component, wherein the metal body has sections that are disposed opposite each other, while maintaining at least one clearance disposed between the sections, application of the sinter material on an area of at least one of the electronic components, and forming an electrically conducting connection between the surface of the one electronic component, which has the plurality of metal bodies thereon, and the other electronic component by means of sintering the sinter material.
  • the first electronic component is a semiconductor, wherein the fastening of the metal bodies preferably occurs on the surface of the semiconductor.
  • the second electronic component is preferably a metal molded body for forming a suitable contact surface for bonding by means of wires or strips.
  • first electronic component and/or the second electronic component have one surface that is made of a non-precious metal.
  • the metal body is fastened to an oxidized surface of one of the electronic components, wherein the metal bodies are particularly preferably made of a precious metal.
  • the metal that is used for the metal bodies is, particularly, gold or copper, wherefore, for example, gold bumps are preferred.
  • the metal bodies are disposed evenly distributed across the area of the surface of one of the electronic components.
  • the metal bodies are distributed in a grid-type fashion across the surface of one of the electronic components.
  • the metal body can also be a curved copper wire, which is specifically formed as meandering.
  • the metal bodies can be fastened in a dot-like manner on the surface of one of the electronic components.
  • the metal bodies prefferably fastened by means of thermosonic bonding or ultrasound bonding.
  • an electronic assembly that has a first electronic component and a second electronic component, which is connected to the former in an electrically conducting manner by means of a sintering material and a plurality of metal bodies that are areally distributed within the sinter material and connected to one surface of one of the electronic components, or a metal body that is disposed in the sinter material and bonded with one surface of one of the electronic components having sections that are arranged opposite each other, while maintaining at least one clearance disposed between the sections.
  • the metal body or the metal bodies is/are disposed inside a layer of oxidized material close to the surface of the electronic component and bond with non- oxidized material of the metal body.
  • the first electronic component is a semiconductor and that the second electronic component is a metal molded body for forming an electric bond by means of a wire or a strip.
  • the first electronic component and/or second electronic component has/have one surface made of a non-precious metal. It is preferred that the metal body or the metal bodies of the electronic assembly are made of a precious metal.
  • the precious metal is, particularly, gold or copper.
  • the metal bodies can be configured as a plurality of gold bumps.
  • the metal body is a curved copper wire.
  • the copper wire is particularly preferably configured as meandering.
  • Fig. 2 is a schematic sectional view depicting the effect of the present invention
  • Fig. 3 is a top view of a particularly preferred embodiment with “gold bumps”;
  • Fig. 4 is a top view of a further particularly preferred embodiment with a copper wire
  • Fig. 5 is a sectional view of the embodiment from Fig. 4.
  • Fig. 6 shows the schematic process of the claimed method for connecting a first electronic component with a second electronic component, whereby an electrically conducting bond is formed between the first and the second electronic components by means of sintering a metallic sinter material that is disposed between the first electronic component and the second electronic component.
  • Fig. 2 shows a schematic lateral view depicting the effect of the present invention
  • a first metal molded body 10 when a first metal molded body 10 is used that is made of a non-precious metal, the non-precious metal will initiate self-passivation, which results in an oxide layer 20.
  • the use of the metal bodies 50 according to the invention particularly when they are made of a precious metal, will penetrate the oxide layer 20 during sintering, whereby, using the third metal bodies 50 and the sinter layer 30, an electrically conducting bond can be created between the first metal molded body 10 and the second metal molded body 40.
  • Fig. 3 shows a top view of a particularly preferred embodiment, where a plurality of metal bodies 50 is disposed on the oxidized surface 20 of a non-precious metal mold body.
  • the metal bodies 50 are regularly and symmetrically distributed across the area of the oxidized surface 20 of the metal molded body.
  • the metal bodies 50 are constituted of metal bodies 50 made of a precious metal. These metal bodies 50 are made of gold, wherein “gold bumps” that are known in the art were used.
  • Fig. 4 shows a top view of an alternative configuration that utilizes a copper wire as metal body.
  • Fig. 4 shows a silicon chip 60 that carries a metallization 10 of a non-precious metal. Disposed on this metallization 10 is only one copper wire 70 that is bonded, for example by means of ultrasound welding, wherein, advantageously, the weld points 80 are evenly distributed across the total area of the silicon chip.
  • the bond surfaces 80 and the wires 70 form a contact point relative to the sinter layer 30, and thereby a second electronic component relative to the metal molded body 40, which is connected to the silicon chip 60 as first electronic component.
  • Fig. 6 shows the schematic process of the claimed method for connecting a first electronic component with a second electronic component, whereby an electrically conducting bond is formed between the first and the second electronic components by way of sintering a metallic sinter material that is disposed between the first electronic component and the second electronic component.
  • step SI at least a plurality of metal bodies that are distributed across the area of the surface of one of the electronic components, while maintaining the clearances disposed between the metal bodies on the electronic component; or a metal body that extends in one plane on the electronic component is fastened, wherein the metal body has sections that are disposed opposite each other in one plane, while maintaining at least one clearance disposed between the sections.
  • step S2 a sinter material is applied across the area of at least one of the electronic components.
  • step S3 an electrically conducting bond is formed between the surface of the one electronic component with the plurality of metal bodies thereon and the other electronic component by means of sintering the sinter material.

Abstract

A method for connecting a first electronic component with a second electronic component, whereby an electrically conducting bond is formed between the first and the second electronic components by means of sintering a metallic sinter material that is disposed between the first electronic component and the second electronic component and which is characterized by these steps: fastening at least a plurality of metal bodies that are distributed across the area of the surface of one of the electronic components while maintaining the clearances that are disposed between the metal bodies on the electronic component, or fastening a metal body that extends in one plane on the electronic component, wherein the metal body includes sections thereon that are disposed opposite each other while maintaining at least one of the clearances disposed between the sections, application of the sinter material across the area of at least one of the electronic components, and forming an electrically conducting bond between the surface of the electronic component with the plurality of metal bodies thereon and the other electronic component by means of sintering the sinter material.

Description

Method for connecting a first electronic component with a second electronic component
The invention relates to a method for connecting a first electronic component with a second electronic component, whereby an electrically conducting bond is formed between the first and the second electronic components by means of sintering a metallic sinter material that is disposed between the first electronic component and the second electronic component.
Sintering metal molded bodies to form a suitable connection area for connecting the former with wires or strips on a power semiconductor device, which is coated with precious metals, is possible with the use of a silver sintering paste.
In this context, the term precious metals is understood to refer to metals with a very low tendency to oxidize when they are exposed to ambient conditions and temperatures up to 300°C.
A silver sintering paste is located on the metal molded bodies that are loaded, together with the paste, on the precious metal of a performance semiconductor. The metal layers are interconnected by means of a sintering process; silver molecules diffuse into the precious metals of the metal molded body and the metallization on the performance semiconductor.
Although it is possible to produce reliable and very durable bonds between precious metals and semiprecious metals with the use of silver sintering pastes, said bond, nonetheless, suffers from these main disadvantages: since precious or semi-precious metals are needed for the diffusion processes during sintering, these metals must be applied to the semiconductor components by way of complex processes that must be performed by the semiconductor manufacturer; any additional coating of the semiconductor elements involves complex work steps and great expense; precious metals as a resource are expensive and will become scarce and ever more expensive in the future. The use of non-precious metals as an alternative, such as, for example, aluminum, results in an undesired oxide layer on the metal surface (e.g., aluminum surfaces) due to self-passivation, which interferes with the diffusion processes during sintering.
This aspect is shown schematically in Fig. 1. Fig. 1 shows a schematic sectional view of a first metal molded body 10 that is made of a non-precious metal, for example, aluminum, and that is bonded to a second metal molded body 40 by means of a sintered layer 30. Due to the oxide layer 20 that was formed via self-passivation, the electric conductivity and the quality of the bond between the first metallic mold body 10 and the second metallic mold body 40 is inadequate for industrial applications.
The use of non-precious metals, as known in the art, is therefore not a viable alternative for the use of precious metals intended for the purpose of forming metallic molded bodies.
It is, nonetheless, the object of the present invention to provide a method for bonding semiconductor components without metallization and precious metals.
According to the invention, this object is achieved by the method with the characteristics as specified in claim 1. The dependent claims specify advantageous embodiments.
As its goal the invention proposes bonding semiconductor components with precious metals even without metallization, by means of sintering processes. According to the invention, the semiconductor components, accordingly, have aluminum or aluminum alloys on the top side of their connection areas, wherein the passively formed oxide layer is perforated by the application of another metal. Said perforation of the oxide layer can be achieved by providing an energy input, such as, for example, movement or the application of ultrasound at an elevated temperature and/or elevated pressure, if need be, while simultaneously removing oxygen, whereby a diffusion with adhesion is initiated.
This means that the sintering process is preceded by a preparatory process relative to the surfaces with oxide adhesions, whereby an additional metal is applied to said surfaces. Nowadays, this can be achieved, for example, with the use of a wire bonding process. The combination of pressure, heat and/or ultrasound during the bonding process causes a perforation of the oxide layer on the non-precious metal, whereby an inter-metallic phase is created between the metals. This way, a bond with good electric conductivity is obtained.
Experiments have shown that, in addition to using this process only in a dot-like manner, as in the application of wire bonding, this process can also be initiated with areal coverage or a plurality of dots on the connection area simultaneously.
A sintering paste with high diffusion potential is then applied, the bonding metal is loaded, and the sintering process is started. Based on the multiple, localized perforations of the metallic layer by means of the additional metal, the sintering paste can create metallic bonds with the bonding partners.
Example 1
For example, metallic bonding feet or ball bonds are applied to the aluminum surface of a performance semiconductor using wire bond processes (e.g., thermosonic bonding). Gold wire, for example, is a suitable wire that is already in use in the microelectronics industry for creating successful bonds with aluminum.
Ball bonds can be executed and result in so-called gold bumps on the aluminum. The method that envisions only the bonding of balls, without creating wire bridges or wire loops, is also known in the art as the Au-stud-bumping method. Particularly, a plurality of bonding feet (gold bumps) is distributed across the area of the aluminum that is to be bonded.
Due to the bonding process, a layer of aluminum oxide that formed on the aluminum body is locally perforated and, due to interdiffusion, a connection is created between the gold bump and the purely metallic surface of the aluminum metallization.
Then follow the usual steps for sintering with low temperature bonding technique. A sintering phase is applied to the aluminum surface and the gold bumps, and a sinter process is performed.
The purpose for providing the bonding feet on the aluminum body lies in achieving better bonding action of the sinter layer to the aluminum. The molecules of the sintering paste can now diffuse to the gold without any interfering oxide layers. Due to the bonding process that perforates the oxide layer of the aluminum, the diffusion processes can now act all the way down to the aluminum. Moreover, the diffusion zone also expands laterally resulting in a, for the most part, areal bond of the sintered connection. This means that, aside from the localized perforation of the aluminum oxide at the gold bumps, the sinter capacity in adjacent areas can also be improved.
Example 2
Another possibility for penetrating the aluminum oxide is the option of bonding a wire, such as, for example, copper wire, via the ultrasound process on the aluminum surface of the chip. Advantageously, the weld points are evenly distributed over the entire chip area.
A sinter layer is applied, for example, to the area that was bonded with copper wire, wherein the height of the sinter layer is greater than the height of the bond wires. The sinter layer can be sintered with or without pressure. After sintering, the bond surfaces and the wires form a contact point with the sinter layer.
Preferably, the thickness of the bond wires is chosen in such a manner that the non-precious metallization is not damaged. The use of thin wires is recommended. The number of bond surfaces is preferably chosen accordingly to provide the necessary amperage without overloading the bond surfaces. The number of bond surfaces is to be chosen accordingly to guarantee a mechanical connection of adequate quality.
Example 3
A further embodiment is based on sintering a pad of silver powder onto the non-precious metal surface of the semiconductor component by means of ultrasound welding and/or friction welding. Ultrasound and/or friction energy is used to remove the interfering oxide layer. As a result, the silver sinter pad is diffused into the non-precious metal and forms a stable inter-metallic phase.
First, silver powder depositories are applied to the non-precious metallization forming a pattern. In the next step, the silver depositories are compressed by means of ultrasound welding or friction welding and sintered at a corresponding temperature. The sintered pad removes the oxide layer and diffuses into the non-precious metal. Silver pads prepared in this manner are suitable as sinterable surfaces for the subsequent sinter processes, as described in the preceding examples.
According to the invention, a method is proposed for connecting a first electronic component with a second electronic component, whereby an electrically conducting bond is formed between the first and the second electronic components by means of sintering a metallic sinter material that is disposed between the first electronic component and the second electronic component including these steps: fastening at least a plurality of metal bodies that are distributed across the area of the surface of one of the electronic components, while maintaining the clearances that are disposed between the metal bodies on the electronic component, or fastening a metal body that extends in one plane on the electronic component, wherein the metal body has sections that are disposed opposite each other, while maintaining at least one clearance disposed between the sections, application of the sinter material on an area of at least one of the electronic components, and forming an electrically conducting connection between the surface of the one electronic component, which has the plurality of metal bodies thereon, and the other electronic component by means of sintering the sinter material.
Preferably, the first electronic component is a semiconductor, wherein the fastening of the metal bodies preferably occurs on the surface of the semiconductor.
In contrast, the second electronic component is preferably a metal molded body for forming a suitable contact surface for bonding by means of wires or strips.
It is particularly envisioned that the first electronic component and/or the second electronic component have one surface that is made of a non-precious metal.
Specifically, the metal body is fastened to an oxidized surface of one of the electronic components, wherein the metal bodies are particularly preferably made of a precious metal. The metal that is used for the metal bodies is, particularly, gold or copper, wherefore, for example, gold bumps are preferred. According to another preferred embodiment of the method, the metal bodies are disposed evenly distributed across the area of the surface of one of the electronic components. Particularly, the metal bodies are distributed in a grid-type fashion across the surface of one of the electronic components.
As an alternative to the use of gold bumps, the metal body can also be a curved copper wire, which is specifically formed as meandering.
Preferably, the metal bodies can be fastened in a dot-like manner on the surface of one of the electronic components.
It is generally preferred for the metal bodies to be fastened by means of thermosonic bonding or ultrasound bonding.
Finally, also proposed is an electronic assembly that has a first electronic component and a second electronic component, which is connected to the former in an electrically conducting manner by means of a sintering material and a plurality of metal bodies that are areally distributed within the sinter material and connected to one surface of one of the electronic components, or a metal body that is disposed in the sinter material and bonded with one surface of one of the electronic components having sections that are arranged opposite each other, while maintaining at least one clearance disposed between the sections.
Preferably, it is envisioned that the metal body or the metal bodies is/are disposed inside a layer of oxidized material close to the surface of the electronic component and bond with non- oxidized material of the metal body.
Preferably, it is envisioned that the first electronic component is a semiconductor and that the second electronic component is a metal molded body for forming an electric bond by means of a wire or a strip.
Specifically, the first electronic component and/or second electronic component has/have one surface made of a non-precious metal. It is preferred that the metal body or the metal bodies of the electronic assembly are made of a precious metal. The precious metal is, particularly, gold or copper.
According to a first preferred embodiment, the metal bodies can be configured as a plurality of gold bumps.
According to a further preferred configuration, the metal body is a curved copper wire. The copper wire is particularly preferably configured as meandering.
The invention will be described in further detail below based on the enclosed drawings and, particularly preferably, based on an embodiment. Shown are as follows:
Fig. 2 is a schematic sectional view depicting the effect of the present invention;
Fig. 3 is a top view of a particularly preferred embodiment with “gold bumps”;
Fig. 4 is a top view of a further particularly preferred embodiment with a copper wire;
Fig. 5 is a sectional view of the embodiment from Fig. 4; and
Fig. 6 shows the schematic process of the claimed method for connecting a first electronic component with a second electronic component, whereby an electrically conducting bond is formed between the first and the second electronic components by means of sintering a metallic sinter material that is disposed between the first electronic component and the second electronic component.
Fig. 2 shows a schematic lateral view depicting the effect of the present invention;
As described above in Fig. 1, when a first metal molded body 10 is used that is made of a non-precious metal, the non-precious metal will initiate self-passivation, which results in an oxide layer 20. The use of the metal bodies 50 according to the invention, particularly when they are made of a precious metal, will penetrate the oxide layer 20 during sintering, whereby, using the third metal bodies 50 and the sinter layer 30, an electrically conducting bond can be created between the first metal molded body 10 and the second metal molded body 40.
Fig. 3 shows a top view of a particularly preferred embodiment, where a plurality of metal bodies 50 is disposed on the oxidized surface 20 of a non-precious metal mold body. The metal bodies 50 are regularly and symmetrically distributed across the area of the oxidized surface 20 of the metal molded body. Specifically, the metal bodies 50 are constituted of metal bodies 50 made of a precious metal. These metal bodies 50 are made of gold, wherein “gold bumps” that are known in the art were used.
Fig. 4 shows a top view of an alternative configuration that utilizes a copper wire as metal body. Fig. 4 shows a silicon chip 60 that carries a metallization 10 of a non-precious metal. Disposed on this metallization 10 is only one copper wire 70 that is bonded, for example by means of ultrasound welding, wherein, advantageously, the weld points 80 are evenly distributed across the total area of the silicon chip.
As shown in Fig. 5, where the silicon chip 60 is disposed on a substrate 90, after sintering, the bond surfaces 80 and the wires 70 form a contact point relative to the sinter layer 30, and thereby a second electronic component relative to the metal molded body 40, which is connected to the silicon chip 60 as first electronic component.
Fig. 6 shows the schematic process of the claimed method for connecting a first electronic component with a second electronic component, whereby an electrically conducting bond is formed between the first and the second electronic components by way of sintering a metallic sinter material that is disposed between the first electronic component and the second electronic component.
In step SI, at least a plurality of metal bodies that are distributed across the area of the surface of one of the electronic components, while maintaining the clearances disposed between the metal bodies on the electronic component; or a metal body that extends in one plane on the electronic component is fastened, wherein the metal body has sections that are disposed opposite each other in one plane, while maintaining at least one clearance disposed between the sections. In step S2, a sinter material is applied across the area of at least one of the electronic components.
Finally, in step S3, an electrically conducting bond is formed between the surface of the one electronic component with the plurality of metal bodies thereon and the other electronic component by means of sintering the sinter material.

Claims

1 A method for connecting a first electronic component with a second electronic component, whereby an electrically conducting bond is formed between the first and the second electronic components by means of sintering a metallic sinter material that is disposed between the first electronic component and the second electronic component, characterized by these steps: fastening at least a plurality of metal bodies that are distributed across the area of the surface of one of the electronic components, while maintaining the clearances between the metal bodies on the electronic component, or fastening a metal body that extends in one plane on the electronic component, wherein the metal body has sections that are disposed opposite each other, while maintaining at least one clearance between the sections, application of the sinter material on an area of at least one of the electronic components, and forming an electrically conducting bond between the surface of the one electronic component having the plurality of metal bodies thereon with the other electronic component by means of sintering the sinter material.
2. The method according to claim 1, wherein the first electronic component is a semiconductor.
3. The method according to claim 2, wherein the fastening of the metal bodies is achieved on the surface of the semiconductor.
4. The method according to any one of the preceding claims, wherein the second electronic component is a metal molded body for forming a contact area that is suitable for bonding by means of wires or strips.
5. The method according to any one of the preceding claims, wherein the first electronic component and/or second electronic component has/have one surface that is made of a non-precious metal.
6. The method according to any one of the preceding claims, wherein the fastening of the metal body is achieved on an oxidized surface of one of the electronic components.
7. The method according to any one of the preceding claims, wherein the metal bodies are made of a precious metal.
8. The method according to claim 7, wherein the metal is gold or copper.
9. The method according to claim 7 and 8, wherein the metal body is configured as gold bumps.
10. The method according to any one of the preceding claims, wherein the metal bodies are evenly distributed across the area of the surface of one of the electronic components.
11. The method according to any one of the preceding claims, wherein the metal bodies are distributed in a grid-type pattern across the surface of one of the electronic components.
12. The method according to any one of the claims 1 to 8, wherein the metal body is a curved copper wire.
13. The method according to claim 12, wherein the copper wire is configured as meandering.
14. The method according to any one of the preceding claims, wherein the metal bodies are fastened in a dot-type manner on the surface of one of the electronic components.
15. The method according to any one of the preceding claims, wherein the fastening of the metal bodies is achieved by means of thermosonic bonding.
16. The method according to any one of the claims 1 to 12, wherein the fastening of the metal bodies is achieved by means of ultrasound bonding.
17. An electronic assembly having a first electronic component, a second electronic component that is connected to the former in an electrically conducting manner by means of a sintering material and a plurality of metal bodies that are distributed across the area of the sinter material and connected to one surface of one of the electronic components, or a metal body that is disposed in the sinter material and connected to one surface of one of the electronic components having sections that are arranged opposite each other while maintaining at least one clearance disposed between the sections.
18. The electronic assembly according to claim 15, wherein the metal body or the metal bodies are disposed in a layer of oxidized material close to the surface of the electronic component while bonding non-oxidized material of the metal body.
19. The electronic assembly according to one of the claims 15 and 16, wherein the first electronic component is a semiconductor and the second electronic component is a metal molded body for forming an electric bond by means of a wire or a strip.
20. The electronic assembly according to according to one of the claims 15 to 17, wherein the first electronic component and/or second electronic component has/have one surface that is made of a non-precious metal.
21. The electronic assembly according to one of the claims 15 to 18, wherein the metal body or the metal bodies are made of a precious metal.
22. The electronic assembly according to claim 19, wherein the metal is gold or copper.
23. The electronic assembly according to one of the claims 17 to 22, wherein the metal body is a curved copper wire.
24. The electronic assembly according to claim 23, wherein the copper wire is configured as meandering.
PCT/EP2020/074397 2019-09-17 2020-09-02 Method for connecting a first electronic component with a second electronic component WO2021052752A1 (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998037133A1 (en) * 1997-02-20 1998-08-27 Partnerships Limited, Inc. Low temperature method and compositions for producing electrical conductors
JP2011071301A (en) * 2009-09-25 2011-04-07 Honda Motor Co Ltd Joining method and joining body using metal nanoparticle
EP2390914A1 (en) * 2010-05-27 2011-11-30 SEMIKRON Elektronik GmbH & Co. KG Assembly of two connection partners with low temperature pressure interconnection and method for producing same
JP2014030829A (en) * 2012-08-01 2014-02-20 Kyocera Corp Joining method of metal surfaces and method for manufacturing semiconductor element mounted body using same
US20170229415A1 (en) * 2016-02-09 2017-08-10 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device having base and semiconductor element and semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4635230B2 (en) * 2005-01-20 2011-02-23 日産自動車株式会社 Joining method and joining structure
JP4638382B2 (en) * 2006-06-05 2011-02-23 田中貴金属工業株式会社 Joining method
US10777496B2 (en) * 2017-10-06 2020-09-15 International Business Machines Corporation Chip packages with sintered interconnects formed out of pads

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998037133A1 (en) * 1997-02-20 1998-08-27 Partnerships Limited, Inc. Low temperature method and compositions for producing electrical conductors
JP2011071301A (en) * 2009-09-25 2011-04-07 Honda Motor Co Ltd Joining method and joining body using metal nanoparticle
EP2390914A1 (en) * 2010-05-27 2011-11-30 SEMIKRON Elektronik GmbH & Co. KG Assembly of two connection partners with low temperature pressure interconnection and method for producing same
JP2014030829A (en) * 2012-08-01 2014-02-20 Kyocera Corp Joining method of metal surfaces and method for manufacturing semiconductor element mounted body using same
US20170229415A1 (en) * 2016-02-09 2017-08-10 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device having base and semiconductor element and semiconductor device

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