JPH0748507B2 - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JPH0748507B2
JPH0748507B2 JP62205521A JP20552187A JPH0748507B2 JP H0748507 B2 JPH0748507 B2 JP H0748507B2 JP 62205521 A JP62205521 A JP 62205521A JP 20552187 A JP20552187 A JP 20552187A JP H0748507 B2 JPH0748507 B2 JP H0748507B2
Authority
JP
Japan
Prior art keywords
wire
tip
semiconductor element
capillary
bonding method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62205521A
Other languages
Japanese (ja)
Other versions
JPS6447039A (en
Inventor
清昭 津村
仁士 藤本
修一 大坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62205521A priority Critical patent/JPH0748507B2/en
Publication of JPS6447039A publication Critical patent/JPS6447039A/en
Publication of JPH0748507B2 publication Critical patent/JPH0748507B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/45147—Copper (Cu) as principal constituent
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    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
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    • H01L2224/78306—Shape of other portions inside the capillary
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    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
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    • H01L2924/20109—Temperature range 350 C=<T<400 C, 623.15K =<T< 673.15K

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体装置の製造工程で用いるワイヤボンデ
ィング方法に関する。The present invention relates to a wire bonding method used in a semiconductor device manufacturing process.

〔従来の技術〕[Conventional technology]

従来、この種のワイヤボンディング方法は第６図（ａ）
〜（ｅ）に示す手順を経て行うものが採用されている。
これを同図に基づいて説明する。Conventionally, this type of wire bonding method is shown in FIG. 6 (a).
What is performed through the procedure shown to (e) is adopted.
This will be described with reference to FIG.

先ず、同図（ａ）に示すようにキャピラリチップ１を挿
通する銅ワイヤ２の先端部をトーチ３によって球状に形
成する。次に、同図（ｂ）に示すようにリードフレーム
４のダイスパッド５上にキャピラリチップ１を降下させ
ることにより、銅ワイヤ２の球状部2aを半導体素子６の
アルミニウム系電極6a（ワイヤ接続面）に圧接する。こ
のとき、半導体素子６は加熱され、キャピラリチップ１
には超音波振動が印加される。そして、同図（ｃ）に示
すようにキャピラリチップ１を上昇させることによりそ
の先端部1aから銅ワイヤ２を繰り出し、同図（ｄ）に示
すようにリードフレーム４のインナーリード７上にキャ
ピラリチップ１を降下させることにより銅ワイヤ２をイ
ンナーリード７のワイヤ接続面7aに圧接する。このと
き、リードフレーム４が加熱され、キャピラリチップ１
に超音波振動が印加される。しかる後、キャピラリチッ
プ１の上方でクランパ８によって固定し上昇させること
により銅ワイヤ２を分断する。First, as shown in FIG. 3A, the tip end of the copper wire 2 which inserts the capillary tip 1 is formed into a spherical shape by the torch 3. Next, as shown in FIG. 2B, the capillary chip 1 is lowered onto the die pad 5 of the lead frame 4 to move the spherical portion 2a of the copper wire 2 to the aluminum-based electrode 6a (wire connecting surface) of the semiconductor element 6. ) Under pressure. At this time, the semiconductor element 6 is heated and the capillary chip 1
Ultrasonic vibration is applied to. Then, as shown in FIG. 3C, the capillary chip 1 is lifted to feed out the copper wire 2 from the tip 1a thereof, and as shown in FIG. 2D, the capillary chip 1 is placed on the inner lead 7 of the lead frame 4. The copper wire 2 is pressed against the wire connecting surface 7a of the inner lead 7 by lowering the wire 1. At this time, the lead frame 4 is heated and the capillary chip 1
Ultrasonic vibration is applied to. Thereafter, the copper wire 2 is divided by fixing it with the clamper 8 above the capillary chip 1 and raising it.

このようにして、ワイヤボンディングを行うことができ
る。In this way, wire bonding can be performed.

ところで、この種のワイヤボンディング方法において
は、ワイヤ球状部2aをワイヤ接続面（アルミニウム系電
極6a）に圧接した時に、第７図に示すようにキャピラリ
チップ１の先端部1aと半導体素子６のアルミニウム系電
極6aとの間で球状部2aを塑性変形させ、超音波振動の印
加によって銅ワイヤ２とアルミニウム系電極6aを振動さ
せることにより、両金属が相互拡散するものである。By the way, in this type of wire bonding method, when the wire spherical portion 2a is pressed into contact with the wire connecting surface (aluminum-based electrode 6a), the tip 1a of the capillary chip 1 and the aluminum of the semiconductor element 6 as shown in FIG. The spherical portion 2a is plastically deformed between itself and the system electrode 6a, and the copper wire 2 and the aluminum system electrode 6a are vibrated by the application of ultrasonic vibration, so that both metals mutually diffuse.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

ところが、従来のワイヤボンディング方法においては、
キャピラリチップ１の先端部1aと半導体素子６のアルミ
ニウム系電極6a間の距離Ｈと、アルミニウム系電極6a上
のワイヤ径Ｄとの寸法比H/Dが許容寸法比の範囲外の寸
法比に設定されると、超音波振動を印加するにあたり半
導体素子６の素材（Si）が損傷し易く、またワイヤ接続
面（アルミニウム系電極）上で金属相互拡散が十分に行
われなかった。この結果、銅ワイヤ２がワイヤ接続面に
対して接続されない部分が多く残り、この接続部分の酸
化や腐食によって銅ワイヤ２が劣化するという問題があ
った。However, in the conventional wire bonding method,
The dimension ratio H / D between the distance H between the tip 1a of the capillary chip 1 and the aluminum-based electrode 6a of the semiconductor element 6 and the wire diameter D on the aluminum-based electrode 6a is set to a dimension ratio outside the allowable dimension ratio range. Then, the material (Si) of the semiconductor element 6 was easily damaged when ultrasonic vibration was applied, and metal interdiffusion was not sufficiently performed on the wire connection surface (aluminum-based electrode). As a result, there are many portions where the copper wire 2 is not connected to the wire connecting surface, and there is a problem that the copper wire 2 deteriorates due to oxidation and corrosion of the connecting portion.

ここで、ワイヤ径Ｄは、銅ワイヤ２をその軸線を含みワ
イヤ接続面に垂直な面によって断面した場合の幅方向寸
法のことである。Here, the wire diameter D is a width direction dimension when the copper wire 2 is cross-sectioned by a plane including the axis thereof and perpendicular to the wire connection surface.

本発明はこのような事情に鑑みなされたもので、ワイヤ
をワイヤ接続面上に確実に接続することができ、もって
ワイヤ接続上の信頼性を向上させることができるワイヤ
ボンディング方法を提供するものである。The present invention has been made in view of the above circumstances, and provides a wire bonding method capable of reliably connecting a wire to a wire connection surface and thus improving reliability in wire connection. is there.

〔問題点を解決するための手段〕[Means for solving problems]

本発明に係るワイヤボンディング方法は、超音波振動を
印加するにあたり、キャピラリチップの先端部と半導体
素子のワイヤ接続面間の距離Ｈと、ワイヤ接続面上のワ
イヤ径Ｄとの寸法比H/Dを1/6〜1/400の寸法比に設定す
るものである。In applying the ultrasonic vibration, the wire bonding method according to the present invention has a dimension ratio H / D between the distance H between the tip of the capillary chip and the wire connecting surface of the semiconductor element and the wire diameter D on the wire connecting surface. Is set to a dimensional ratio of 1/6 to 1/400.

〔作用〕[Action]

本発明においては、半導体素子の損傷を抑制することが
でき、またワイヤ接続面上で各金属を互いに十分に拡散
させることができる。In the present invention, damage to the semiconductor element can be suppressed, and the metals can be sufficiently diffused on the wire connection surface.

〔実施例〕〔Example〕

第１図は本発明に係るワイヤボンディング方法を説明す
るための断面図で、同図以下において第６図および第７
図と同一の部材については同一の符号を付し、以下その
方法について説明する。FIG. 1 is a cross-sectional view for explaining the wire bonding method according to the present invention.
The same members as those in the drawings are designated by the same reference numerals, and the method thereof will be described below.

先ず、キャピラリチップ１を挿通する銅ワイヤ２の先端
部をトーチ３によって球状に形成する。次に、ダイスパ
ッド５上にキャピラリチップ１を降下させることによ
り、銅ワイヤ２の球状部2aを半導体素子６のアルミニウ
ム系電極6a（ワイヤ接続面）に圧接する。このとき、チ
ップ圧接力は静荷重で100gr〜130grに設定され、半導体
素子６は360°〜390°に加熱され、またキャピラリチッ
プ１に超音波振動が印加される。この際、キャピラリチ
ップ１の先端部1aと半導体素子６のアルミニウム系電極
6a間の距離Ｈと、アルミニウム系電極（ワイヤ接続面）
6a上のワイヤ径Ｄとの寸法比H/Dを1/6〜1/400の寸法比
に設定する。First, the tip portion of the copper wire 2 which passes through the capillary tip 1 is formed into a spherical shape by the torch 3. Next, by lowering the capillary chip 1 onto the die pad 5, the spherical portion 2a of the copper wire 2 is pressed against the aluminum-based electrode 6a (wire connecting surface) of the semiconductor element 6. At this time, the chip pressing force is set to 100 gr to 130 gr under static load, the semiconductor element 6 is heated to 360 ° to 390 °, and ultrasonic vibration is applied to the capillary chip 1. At this time, the tip 1a of the capillary chip 1 and the aluminum-based electrode of the semiconductor element 6
Distance H between 6a and aluminum electrode (wire connection surface)
Set the dimensional ratio H / D to the wire diameter D on 6a to a dimensional ratio of 1/6 to 1/400.

このようにして、半導体素子６のアルミニウム系電極6a
に対するワイヤボンディングを行うことができる。In this way, the aluminum-based electrode 6a of the semiconductor element 6
Wire bonding can be performed.

この後、キャピラリチップ１を上昇させることにより先
端部1aから銅ワイヤ２を繰り出し、リードフレーム４の
インナーリード７上にキャピラリチップ１を降下させる
ことにより銅ワイヤ２をインナーリード７のワイヤ接続
面7aに圧接する。そして、キャピラリチップ１の上方で
クランパ８によって固定し上昇させることにより銅ワイ
ヤ２を分断する。Then, the capillary tip 1 is raised to feed the copper wire 2 from the tip portion 1a, and the capillary tip 1 is lowered onto the inner lead 7 of the lead frame 4 to move the copper wire 2 to the wire connecting surface 7a of the inner lead 7. Press against. Then, the copper wire 2 is divided by being fixed and raised by the clamper 8 above the capillary chip 1.

本発明においては、超音波振動を印加するにあたり、キ
ャピラリチップ１の先端部1aと半導体素子６のアルミニ
ウム系電極6a間の距離Ｈと、半導体素子６のワイヤ接続
面（アルミニウム系電極6a）上のワイヤ径Ｄとの寸法比
H/Dを1/6〜1/400の寸法比に設定するから、半導体素子
６の素材（Si）の損傷を抑制することができ、またアル
ミニウム系電極6a上で各金属を互いに十分に拡散させる
ことができる。In the present invention, when ultrasonic vibration is applied, the distance H between the tip 1a of the capillary chip 1 and the aluminum-based electrode 6a of the semiconductor element 6 and the wire connection surface (aluminum-based electrode 6a) of the semiconductor element 6 Dimension ratio with wire diameter D
Since the H / D is set to a dimension ratio of 1/6 to 1/400, damage to the material (Si) of the semiconductor element 6 can be suppressed, and each metal is sufficiently diffused on the aluminum-based electrode 6a. Can be made.

このことは、実験によって得られた第２図および第３図
に示す図によって知ることができよう。すなわち、第２
図はキャピラリチップ，ワイヤ接続面間の距離Ｈとワイ
ヤ接続面上のワイヤ径Ｄの寸法比H/D−合金の均一度の
関係を示す図で、ワイヤ接続面に生成する合金層がワイ
ヤ接続面全体に占める割合が分る。This can be seen from the diagrams shown in FIGS. 2 and 3 obtained by experiments. That is, the second
The figure shows the relationship between the distance H between the capillary tip and the wire connection surface and the dimension ratio H / D of the wire diameter D on the wire connection surface-uniformity of the alloy. The alloy layer generated on the wire connection surface is the wire connection surface. You can see the percentage of the entire surface.

また、第３図はキャピラリチップ，ワイヤ接続面間の距
離Ｈとワイヤ接続面上のワイヤ径Ｄの寸法比H/D−合金
層の厚さの関係を示す図である。FIG. 3 is a diagram showing the relationship between the distance H between the capillary tip and the wire connection surface and the dimensional ratio H / D-thickness of the alloy layer of the wire diameter D on the wire connection surface.

ここで、Cuワイヤの場合にH/Dを1/6〜1/400の範囲の寸
法比に設定すると、高温保存（175°,2000Hr以上）後の
動作試験が規格に適合し、Auワイヤ場合にはH/D＞1/6で
も高温保存（175°,2000Hr以上）後の動作試験が規格に
適合する。Here, if H / D is set to a dimension ratio in the range of 1/6 to 1/400 in the case of Cu wire, the operation test after high temperature storage (175 °, 2000Hr or more) conforms to the standard, and in the case of Au wire For H / D> 1/6, the operation test after high temperature storage (175 °, 2000Hr or more) conforms to the standard.

また、Cuワイヤの場合にH/Dを1/400以下の寸法比に設定
すると、ワイヤ接続が十分行われないことが立証されて
いる。In addition, it has been proved that when H / D is set to 1/400 or less in the case of Cu wire, the wire connection is not sufficiently performed.

これから、キャピラリチップ１とワイヤ接続面間の距離
Ｈとワイヤ接続面上のワイヤ径Ｄの寸法比H/Dを1/6〜1/
400の寸法比に設定すると、超音波振動エネルギーを効
率よく作用して均一な合金層を得ることができる。From this, the dimension ratio H / D of the distance H between the capillary tip 1 and the wire connecting surface and the wire diameter D on the wire connecting surface can be set to 1/6 to 1 /
When the dimensional ratio is set to 400, ultrasonic vibration energy can be efficiently applied to obtain a uniform alloy layer.

なお、本発明において使用するキャピラリチップ１は前
述した実施例に限定されず、第４図および第５図に示す
キャピラリチップ11,21を使用しても何等差し支えな
い。この場合、キャピラリチップ11,21の先端部11a,21a
と半導体素子６のアルミニウム系電極6a間の距離は各々
H1，H2とする。（これらH1，H2はワイヤ球状部の圧接厚
さと定義する。） 〔発明の効果〕 以上説明したように本発明によれば、超音波振動を印加
するにあたり、キャピラリチップの先端部と半導体素子
のワイヤ接続面間の距離Ｈと、ワイヤ接続面上のワイヤ
径Ｄとの寸法比H/Dを1/6〜1/400の寸法比に設定するの
で、半導体素子の損傷を抑制することができ、またワイ
ヤ接続面上で各金属を互いに十分に拡散させることがで
きる。したがって、ワイヤをワイヤ接続面上に確実に接
続することができるから、ワイヤ接続上の信頼性を向上
させることができる。The capillary chip 1 used in the present invention is not limited to the above-mentioned embodiment, and the capillary chips 11 and 21 shown in FIGS. 4 and 5 may be used. In this case, the tips 11a, 21a of the capillary tips 11, 21
And the distance between the aluminum-based electrode 6a of the semiconductor element 6 is
Let H 1 and H 2 . (These H 1 and H 2 are defined as the press contact thickness of the wire spherical portion.) [Effect of the Invention] As described above, according to the present invention, when ultrasonic vibration is applied, the tip of the capillary tip and the semiconductor Since the dimensional ratio H / D between the distance H between the wire connection surfaces of the element and the wire diameter D on the wire connection surface is set to a dimension ratio of 1/6 to 1/400, it is possible to suppress damage to the semiconductor element. In addition, the metals can be sufficiently diffused from each other on the wire connection surface. Therefore, the wire can be reliably connected to the wire connection surface, and the reliability of the wire connection can be improved.

【図面の簡単な説明】[Brief description of drawings]

第１図は本発明に係るワイヤボンディング方法を説明す
るための断面図、第２図はワイヤ球状部の圧接厚さとワ
イヤ接続面上のワイヤ径Ｄの寸法比H/D−合金の均一度
の関係を示す図、第３図はワイヤ球状部の圧接厚さＨと
ワイヤ接続面上のワイヤ径Ｄの寸法比H/D−合金層の厚
さの関係を示す図、第４図および第５図は他のワイヤボ
ンディング方法におけるワイヤの接続状態を示す断面
図、第６図（ａ）〜（ｅ）および第７図は従来のワイヤ
ボンディング方法を説明するための図である。 １……キャピラリチップ、1a……先端部、２……銅ワイ
ヤ、2a……球状部、６……半導体素子、6a……アルミニ
ウム系電極。FIG. 1 is a cross-sectional view for explaining the wire bonding method according to the present invention, and FIG. 2 is a dimensional ratio H / D of the contact thickness of the wire spherical portion and the wire diameter D on the wire connecting surface-the uniformity of the alloy. FIG. 3 is a diagram showing the relationship, FIG. 3 is a diagram showing the relationship between the pressure contact thickness H of the wire spherical portion and the dimension ratio H / D of the wire diameter D on the wire connection surface-the thickness of the alloy layer, FIG. 4 and FIG. FIG. 6 is a cross-sectional view showing a wire connection state in another wire bonding method, and FIGS. 6 (a) to 6 (e) and FIG. 7 are views for explaining a conventional wire bonding method. 1 ... Capillary chip, 1a ... Tip part, 2 ... Copper wire, 2a ... Spherical part, 6 ... Semiconductor element, 6a ... Aluminum-based electrode.

Claims (1)

【特許請求の範囲】[Claims] 【請求項１】キャピラリチップを挿通するCuワイヤの先
端部を球状に形成し、この球状部を前記キャピラリチッ
プによってリードフレーム上の半導体素子に圧接した
後、超音波振動を印加することにより前記Cuワイヤと前
記半導体素子を接続するワイヤボンディング方法におい
て、超音波振動を印加するにあたり、キャピラリチップ
の先端部と半導体素子のワイヤ接続面間の距離Ｈと、ワ
イヤ接続面上のワイヤ径Ｄとの寸法比H/Dを1/6〜1/400
の寸法比に設定することを特徴とするワイヤボンディン
グ方法。1. A Cu wire that penetrates a capillary chip is formed into a spherical tip, and the spherical tip is pressed against a semiconductor element on a lead frame by the capillary tip, and ultrasonic vibration is applied to the Cu wire. In a wire bonding method for connecting a wire to the semiconductor element, a dimension of a distance H between the tip of the capillary chip and the wire connecting surface of the semiconductor element and a wire diameter D on the wire connecting surface when applying ultrasonic vibration. Ratio H / D from 1/6 to 1/400
The wire bonding method is characterized in that the dimensional ratio is set.
JP62205521A 1987-08-18 1987-08-18 Wire bonding method Expired - Fee Related JPH0748507B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62205521A JPH0748507B2 (en) 1987-08-18 1987-08-18 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62205521A JPH0748507B2 (en) 1987-08-18 1987-08-18 Wire bonding method

Publications (2)

Publication Number Publication Date
JPS6447039A JPS6447039A (en) 1989-02-21
JPH0748507B2 true JPH0748507B2 (en) 1995-05-24

Family

ID=16508256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62205521A Expired - Fee Related JPH0748507B2 (en) 1987-08-18 1987-08-18 Wire bonding method

Country Status (1)

Country Link
JP (1) JPH0748507B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0817189B2 (en) * 1989-01-13 1996-02-21 三菱電機株式会社 Method for manufacturing semiconductor device
US5229646A (en) * 1989-01-13 1993-07-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with a copper wires ball bonded to aluminum electrodes
JPH03208355A (en) * 1990-01-10 1991-09-11 Mitsubishi Electric Corp Semiconductor device and manufacture thereof
JP4168386B2 (en) * 2003-03-25 2008-10-22 スズキ株式会社 Engine start-up control device

Also Published As

Publication number Publication date
JPS6447039A (en) 1989-02-21

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