WO2020235297A1 - α型サイアロン蛍光体、発光部材、および発光装置 - Google Patents
α型サイアロン蛍光体、発光部材、および発光装置 Download PDFInfo
- Publication number
- WO2020235297A1 WO2020235297A1 PCT/JP2020/017774 JP2020017774W WO2020235297A1 WO 2020235297 A1 WO2020235297 A1 WO 2020235297A1 JP 2020017774 W JP2020017774 W JP 2020017774W WO 2020235297 A1 WO2020235297 A1 WO 2020235297A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light
- type
- phosphor
- light emitting
- wavelength
- Prior art date
Links
- 239000000126 substance Substances 0.000 title abstract description 10
- 239000002245 particle Substances 0.000 claims abstract description 71
- 230000005284 excitation Effects 0.000 claims abstract description 41
- 238000000790 scattering method Methods 0.000 claims abstract description 11
- 238000009826 distribution Methods 0.000 claims abstract description 10
- 238000007561 laser diffraction method Methods 0.000 claims abstract description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 83
- 230000031700 light absorption Effects 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 17
- 238000001228 spectrum Methods 0.000 claims description 16
- 230000001186 cumulative effect Effects 0.000 claims description 11
- 229910052791 calcium Inorganic materials 0.000 claims description 7
- 230000003595 spectral effect Effects 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 2
- 150000002602 lanthanoids Chemical class 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- 239000000843 powder Substances 0.000 description 40
- 239000011575 calcium Substances 0.000 description 12
- 238000005259 measurement Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000011812 mixed powder Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 239000002994 raw material Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- -1 calcium nitride Chemical class 0.000 description 5
- 239000002131 composite material Substances 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000012299 nitrogen atmosphere Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000000691 measurement method Methods 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910001940 europium oxide Inorganic materials 0.000 description 3
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- 239000006104 solid solution Substances 0.000 description 3
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 229910007991 Si-N Inorganic materials 0.000 description 2
- 229910006294 Si—N Inorganic materials 0.000 description 2
- 229920000995 Spectralon Polymers 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- GCLGEJMYGQKIIW-UHFFFAOYSA-H sodium hexametaphosphate Chemical compound [Na]OP1(=O)OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])O1 GCLGEJMYGQKIIW-UHFFFAOYSA-H 0.000 description 2
- 235000019982 sodium hexametaphosphate Nutrition 0.000 description 2
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910018509 Al—N Inorganic materials 0.000 description 1
- 229910018516 Al—O Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910003564 SiAlON Inorganic materials 0.000 description 1
- OMOVVBIIQSXZSZ-UHFFFAOYSA-N [6-(4-acetyloxy-5,9a-dimethyl-2,7-dioxo-4,5a,6,9-tetrahydro-3h-pyrano[3,4-b]oxepin-5-yl)-5-formyloxy-3-(furan-3-yl)-3a-methyl-7-methylidene-1a,2,3,4,5,6-hexahydroindeno[1,7a-b]oxiren-4-yl] 2-hydroxy-3-methylpentanoate Chemical compound CC12C(OC(=O)C(O)C(C)CC)C(OC=O)C(C3(C)C(CC(=O)OC4(C)COC(=O)CC43)OC(C)=O)C(=C)C32OC3CC1C=1C=COC=1 OMOVVBIIQSXZSZ-UHFFFAOYSA-N 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002189 fluorescence spectrum Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229940005740 hexametaphosphate Drugs 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/64—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing aluminium
- C09K11/646—Silicates
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/64—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
Definitions
- the present invention relates to an ⁇ -type sialone phosphor, a light emitting member, and a light emitting device.
- Patent Document 1 describes a technique for adjusting the composition component of an ⁇ -type sialon phosphor (claim 1 of Patent Document 1).
- the present inventor focused on the particle size and examined it, by appropriately removing the fine powder contained in the ⁇ -type sialon particles having an appropriately small particle size, the ⁇ -type sialon fluorescence containing such ⁇ -type sialon particles We have found that the external quantum efficiency of the body can be improved. Further, the external quantum efficiency can be further improved by using an ⁇ -type sialone phosphor having an internal quantum efficiency of 75% or more for excitation light having a wavelength of 455 nm.
- the particle size at which the cumulative value is 5% is D5
- the particle size at which the cumulative value is 50% is D5
- an ⁇ -type sialon phosphor containing ⁇ -type sialon particles can be used.
- an ⁇ -type sialon phosphor containing ⁇ -type sialon particles In the volume frequency particle size distribution of the ⁇ -type Sialon phosphor measured by the laser diffraction / scattering method, the particle size having a cumulative value of 5% is D5, the particle size having a cumulative value of 50% is D50, and the particle size having a 98% value is D98.
- D5 the particle size having a cumulative value of 5%
- D50 the particle size having a cumulative value of 50%
- D50 the particle size having a 98% value
- D98 When ((D98-D5) / D50) is 1.00 or more and 8.00 or less.
- D50 is 10 ⁇ m or less, and
- the internal quantum efficiency for excitation light with a wavelength of 455 nm measured according to the procedure below is 75% or more.
- An ⁇ -type sialone fluorophore is provided.
- the ⁇ -type sialon phosphor is used as a sample, and the sample is filled in a concave cell so that the surface is smooth. After the concave cell is attached to the opening of the integrating sphere, monochromatic light having a predetermined wavelength is introduced into the integrating sphere as excitation light from a light emitting source. At 25 ° C., the sample in the concave cell is irradiated with excitation light, and the spectrum from the sample is measured with a spectrophotometer. From the obtained spectral data, the number of excited reflected light photons (Qref) and the number of fluorescent photons (Qem) are calculated.
- Qref excited reflected light photons
- Qem the number of fluorescent photons
- the standard reflector is attached to the opening of the integrating sphere in the same manner as in (1) above, except that a standard reflector having a reflectance of 99% is used instead of the concave cell, and the excitation light is reflected as standard.
- the plate is irradiated, the spectrum of the excitation light having a wavelength of 455 nm is measured, and the number of excitation light photons (Qex) is calculated from the obtained spectrum data.
- Light emitting element and A wavelength converter that converts the light emitted from the light emitting element and emits light Is a light emitting member
- the wavelength converter has the above-mentioned ⁇ -sialon phosphor.
- a light emitting member is provided.
- a light emitting device including the above light emitting member is provided.
- an ⁇ -type sialone phosphor having excellent external quantum efficiency, a light emitting member using the same, and a light emitting device are provided.
- the ⁇ -type sialone phosphor of the present embodiment will be described.
- the ⁇ -type sialon phosphor of the present embodiment contains ⁇ -type sialon particles, and has a particle diameter of D5 in which the cumulative value is 5% in the volume frequency particle size distribution of the ⁇ -type sialon phosphor measured by the laser diffraction scattering method.
- D5 particle diameter
- D98 particle size of 50%
- D98-D5 / D50 particle size of 98%
- D50 is 10 ⁇ m or less.
- the internal quantum efficiency with respect to the excitation light having a wavelength of 455 nm measured according to the following procedure satisfies 75% or more.
- the ⁇ -type sialon phosphor is used as a sample, and the sample is filled in a concave cell so that the surface is smooth. After the concave cell is attached to the opening of the integrating sphere, monochromatic light having a predetermined wavelength is introduced into the integrating sphere as excitation light from a light emitting source. At 25 ° C., the sample in the concave cell is irradiated with excitation light, and the spectrum from the sample is measured with a spectrophotometer. From the obtained spectral data, the number of excited reflected light photons (Qref) and the number of fluorescent photons (Qem) are calculated.
- Qref excited reflected light photons
- Qem the number of fluorescent photons
- the standard reflector is attached to the opening of the integrating sphere in the same manner as in (1) above, except that a standard reflector having a reflectance of 99% is used instead of the concave cell, and the excitation light is reflected as standard.
- the plate is irradiated, the spectrum of the excitation light having a wavelength of 455 nm is measured, and the number of excitation light photons (Qex) is calculated from the obtained spectrum data.
- the external quantum efficiency of the ⁇ -type sialon phosphor containing such ⁇ -type sialon particles is obtained by appropriately removing the fine powder contained in the ⁇ -type sialon particles having an appropriately small particle size.
- ((D98-D5) / D50) as an index, the properties of the ⁇ -type sialon particles from which fine powder has been removed can be stably evaluated, and the index ((D98-D5) / D50) can be evaluated stably. It was found that the external quantum efficiency of the ⁇ -type sialon phosphor containing the ⁇ -type sialon particles can be improved by setting) in an appropriate numerical range.
- fine powder generated by particle miniaturization treatment has a relatively large specific surface area, a large amount of reflection, and a relatively large amount of crystal defects, so such fine powder is removed. It is considered that this can improve the internal quantum efficiency and reflectance of 455 nm, and thus the external quantum efficiency of 455 nm.
- the upper limit of ((D98-D5) / D50) is 8.00 or less, preferably 7.70 or less, and more preferably 7.30 or less. This makes it possible to improve the external quantum efficiency in the ⁇ -type sialon phosphor containing the ⁇ -type sialon particles from which fine particles have been appropriately removed.
- the lower limit of ((D98-D5) / D50) is, for example, 1.00 or more, preferably 3.00 or more, and more preferably 4.00 or more. This makes it possible to reduce the absorptivity at 700 nm in the ⁇ -type sialon phosphor containing the ⁇ -type sialon particles that are appropriately reduced in size.
- D50 is, for example, 1.0 ⁇ m to 10.0 ⁇ m, preferably 2.5 ⁇ m to 9.0 ⁇ m, and more preferably 3.0 ⁇ m to 9.0 ⁇ m.
- an ⁇ -type sialon phosphor containing ⁇ -type sialon particles having appropriately reduced particles can be realized.
- D50 By setting D50 to the above lower limit value or more, the fluorescence intensity at 455 nm can be improved.
- the particle size at which the cumulative value is 90% is defined as D90.
- the D90 is, for example, 5.5 ⁇ m to 35.0 ⁇ m, preferably 8.5 ⁇ m to 27.0 ⁇ m, and more preferably 10.0 ⁇ m to 25.0 ⁇ m.
- the measured values of D5, D50, D90, D98, Dmax, etc. by the laser diffraction / scattering method of the ⁇ -type sialon phosphor of the present invention are JIS R1622 and R1629.
- 0.5 g of the phosphor to be measured was put into 100 ml of an ion exchange aqueous solution mixed with 0.05 wt% of sodium hexametaphosphate, and this was put into 100 ml of an ion exchange aqueous solution having a transmission frequency of 19.5 ⁇ 1 kHz, a chip size of 20 ⁇ , and an amplitude of 31 ⁇ 5 ⁇ m.
- the chip is placed in the center of the liquid and dispersed for 3 minutes.
- the notation of 19.5 ⁇ 1 indicates that the range is 18.5 or more and 20.5 or less
- 31 ⁇ 5 indicates that the range is 26 or more and 36 or less.
- the internal quantum efficiency for excitation light having a wavelength of 455 nm can be improved by appropriately removing fine particles contained in ⁇ -type sialone particles having an appropriately small particle diameter. ..
- the lower limit of the internal quantum efficiency with respect to the excitation light having a wavelength of 455 nm is 75% or more, preferably 76% or more, and more preferably 77% or more.
- the upper limit of the internal quantum efficiency of 455 nm is not particularly limited, but may be, for example, 100% or less or 99% or less.
- the external quantum efficiency can be improved by using an ⁇ -type sialone phosphor in which ((D98-D5) / D50) is within a predetermined range and the internal quantum efficiency at 455 nm is equal to or higher than a predetermined value.
- a light emitting device having excellent brightness can be realized.
- the upper limit of the light absorption rate for excitation light having a wavelength of 700 nm is, for example, 10% or less, preferably 9% or less, more preferably 7% or less, and further preferably 5% or less.
- the lower limit of the light absorption rate at 700 nm is not particularly limited and may be 0% or more.
- the lower limit of the diffuse reflectance for excitation light having a wavelength of 800 nm is, for example, 90% or more, preferably 92% or more, and more preferably 93% or more.
- the upper limit of the diffuse reflectance at 800 nm is not particularly limited and may be 100% or less.
- the ⁇ -type sialone phosphor of the present embodiment may contain ⁇ -type sialon containing an Eu element represented by the following general formula (1).
- General formula (1) (M) m (1-x) / p (Eu) mx / 2 (Si) 12- (m + n) (Al) m + n (O) n (N) 16-n ...
- M represents one or more elements selected from the group consisting of Li, Mg, Ca, Y and lanthanide elements (excluding La and Ce), and p is the valence of the M element, 0. ⁇ X ⁇ 0.5, 1.5 ⁇ m ⁇ 4.0, 0 ⁇ n ⁇ 2.0. n may be, for example, 2.0 or less, 1.0 or less, or 0.8 or less.
- the solid solution composition of ⁇ -type sialon is such that m Si—N bonds of ⁇ -type silicon nitride unit cells (Si 12 N 16 ) are converted into Al—N bonds and n Si—N bonds are converted into Al—O bonds.
- m / p cations M, Eu
- M, Eu m / p cations
- ⁇ -type sialone is stabilized in a wide composition range, and by substituting a part of it with Eu, it is excited by light in a wide wavelength range from ultraviolet to blue, and from yellow. A phosphor exhibiting orange visible light is obtained.
- the solid solution composition cannot be strictly defined by composition analysis or the like.
- the crystal phase of alpha-SiAlON, alpha-sialon single-phase is preferred, beta-sialon as other crystal phases, aluminum nitride or its polytypoid may include Ca 2 Si 5 N 8, CaAlSiN 3 and the like.
- a method for producing an ⁇ -type sialon phosphor there is a method in which a mixed powder composed of a compound of silicon nitride, aluminum nitride and an infiltrated solid solution element is heated and reacted in a high temperature nitrogen atmosphere.
- a known method may be used for the step of producing the ⁇ -type sialon particles. For example, a firing step of calcining the raw material mixed powder to obtain a calcined product and a calcined product after the firing step are further crushed and pulverized. It may have post-treatment steps such as treatment, classification treatment, annealing treatment and acid treatment. Further, in the post-treatment step, ball mill pulverization and / or decanter treatment can be further performed.
- the method for preparing the ⁇ -type sialon phosphor by appropriately selecting the type and blending amount of each component contained in the ⁇ -type sialone phosphor, the method for preparing the ⁇ -type sialon phosphor, and the like, the above ((D98-D5) / D50) , D5, D50, D90, D98, 455 nm internal quantum efficiency, 700 nm light absorption, and 800 nm diffuse reflectance can be controlled.
- the post-treatment step, ball mill pulverization, decanter treatment, or classification utilizing centrifugal force are appropriately performed as described above ((D98-D5) / D50), D5, D50, D90, D98, 455 nm.
- the internal quantum efficiency of the above, the light absorption rate of 700 nm, and the diffuse reflectance of 800 nm are mentioned as factors for setting the desired numerical range.
- the wavelength converter of the present embodiment converts the light emitted from the light emitting element and emits light, and has the ⁇ -type sialone phosphor.
- the wavelength converter may be composed only of the ⁇ -type sialone phosphor, or may contain a base material in which the ⁇ -type sialon phosphor is dispersed.
- the base material known materials can be used, and examples thereof include glass, resin, and inorganic materials.
- the shape of the wavelength converter is not particularly limited, and the wavelength converter may be configured in a plate shape, or may be configured to seal a part of the light emitting element or the entire light emitting surface.
- the light emitting device of this embodiment includes a light emitting member including a light emitting light source (light emitting element) and the wavelength converter. By combining a light emitting light source and a wavelength converter, light having high light emission intensity can be emitted.
- FIG. 1 is a cross-sectional view schematically showing an example of the structure of the light emitting device of the present embodiment.
- the light emitting device 100 of FIG. 1 includes, for example, a light emitting element 120, a heat sink 130, a case 140, a first lead frame 150, a second lead frame 160, a bonding wire 170, a bonding wire 172, and a composite 40.
- the light emitting element 120 is a semiconductor element that emits excitation light.
- an LED chip that generates light having a wavelength of 300 nm or more and 500 nm or less, which corresponds to blue light from near-ultraviolet light, can be used.
- a group III nitride semiconductor light emitting device may be used.
- the group III nitride semiconductor light emitting device includes, for example, an n layer, a light emitting layer, and a p layer composed of a group III nitride semiconductor such as an AlGaN, GaN, or InAlGaN-based material.
- a blue LED that emits blue light can be used.
- One electrode (not shown) arranged on the upper surface side of the light emitting element 120 is connected to the surface of the first lead frame 150 via a bonding wire 170 such as a gold wire. Further, the other electrode (not shown) formed on the upper surface of the light emitting element 120 is connected to the surface of the second lead frame 160 via a bonding wire 172 such as a gold wire.
- the light emitting element 120 is mounted on the upper surface of the heat sink 130.
- the heat dissipation of the light emitting element 120 can be improved via the heat sink 130.
- a packaging substrate may be used instead of the heat sink 130.
- the case 140 is formed with a substantially funnel-shaped recess whose hole diameter gradually expands from the bottom surface upward.
- the light emitting element 120 is provided on the bottom surface of the recess.
- the wall surface of the recess surrounding the light emitting element 120 serves as a reflector.
- the composite 40 is filled in the recess where the wall surface is formed by the case 140.
- a wavelength converter that lengthens the wavelength of the excitation light emitted from the light emitting element 120 is used.
- a wavelength converter in which phosphor particles 1 containing an ⁇ -type sialon phosphor are dispersed in a sealing material 30 such as a resin may be used.
- the light emitting device 100 emits light generated from the phosphor particles 1 that are excited by absorbing the light emitted from the light emitting element 120, or mixed light with the light from the light emitting element 120.
- the light emitting device 100 may emit white light by mixing the light of the light emitting element 120 and the light generated from the phosphor particles 1.
- the light emitting device is not limited to the surface mount type, and may be a bullet type or a COB (chip on board) type.
- This raw material mixed powder was heat-treated at 1800 ° C. for 16 hours in an atmospheric pressure nitrogen atmosphere in an electric furnace of a carbon heater together with the container. Since calcium nitride contained in the raw material mixed powder is easily hydrolyzed in the air, the boron nitride container filled with the raw material mixed powder is immediately installed in the electric furnace after being taken out from the glove box and immediately installed. Vacuum exhaust was performed to prevent the reaction of calcium nitride. The orange mass collected from the container was lightly crushed in a mortar and passed through a sieve having a mesh size of 150 ⁇ m to obtain a powder.
- the obtained fluorescent powder was used as the ⁇ -sialon type fluorescent substance A.
- Comparative Example 2 56.56 g of ⁇ -type silicon nitride powder (Si 3 N 4 , SN-E10 grade, manufactured by Ube Kosan Co., Ltd.) in a glove box maintained in a nitrogen atmosphere having a water content of 1 mass ppm or less and an oxygen content of 1 mass ppm or less.
- ⁇ -type silicon nitride powder Si 3 N 4 , SN-E10 grade, manufactured by Ube Kosan Co., Ltd.
- a phosphor powder was obtained in the same manner as in Comparative Example 1 except that 1.00 g and 10.00 g of the phosphor powder of Comparative Example 1 were mixed to obtain a raw material mixed powder.
- the obtained fluorescent powder was used as the ⁇ -sialon type fluorescent substance B.
- Example 1 The fluorescent powder obtained in Comparative Example 1 was subjected to a ball mill and a decanter in this order according to the following conditions to obtain a fluorescent powder.
- the obtained fluorescent powder was used as the ⁇ -sialon type fluorescent substance C.
- 0.8 L of ball mill ion-exchanged water and 50 g of the fluorescent powder (sample) obtained in Comparative Example 1 were placed in an alumina pot having a pot capacity of 2 L.
- the alumina pot containing this sample was pulverized by a ball mill for 8 hours under the conditions of a silicon nitride ball ⁇ 5 mm, a ball amount of 1000 g, and a rotation speed of about 150 rpm. Then, it was filtered, dried at 120 ° C.
- the decanter ball milled sample was dispersed in a 0.05 wt% Na hexametaphosphate aqueous solution and allowed to stand for 2 hours to remove fine powder by removing the supernatant at a depth of 4 cm from the water surface. After removal, the mixture was filtered, dried at 120 ° C. for 5 hours, and passed through a 150 ⁇ m sieve to obtain a fluorescent powder.
- Example 2 56.56 g of ⁇ -type silicon nitride powder (Si 3 N 4 , SN-E10 grade, manufactured by Ube Kosan Co., Ltd.) in a glove box maintained in a nitrogen atmosphere having a water content of 1 mass ppm or less and an oxygen content of 1 mass ppm or less.
- ⁇ -type silicon nitride powder Si 3 N 4 , SN-E10 grade, manufactured by Ube Kosan Co., Ltd.
- Example 1 Calcium nitride powder (Ca 3 N 2 , manufactured by Materion) 12.02 g, Aluminum nitride powder (AlN, E grade, manufactured by Tokuyama) 20.41 g, Europium oxide powder (Eu 2 O 3 , RU grade, Shin-Etsu Chemical Industry)
- a phosphor powder was obtained in the same manner as in Example 1 except that 1.00 g and 10.00 g of the phosphor powder of Comparative Example 1 were mixed to obtain a raw material mixed powder.
- the obtained fluorescent powder was used as the ⁇ -sialon type fluorescent substance D.
- Example 3 A phosphor powder was obtained in the same manner as in Example 1 except that the firing temperature was changed to 1900 ° C. The obtained fluorescent powder was used as the ⁇ -sialon type fluorescent E.
- the particle size distribution of the ⁇ -sialon type phosphor was measured by Microtrac MT3300EXII (Microtrac Bell Co., Ltd.), which is a particle size measuring device of a laser diffraction / scattering method.
- the particle size ( ⁇ m) at which the cumulative value is 5% is D5
- the particle size ( ⁇ m) at which the cumulative value is 50% is D50.
- the particle size ( ⁇ m) of 90% was defined as D90
- the particle size ( ⁇ m) of 98% was defined as D98.
- the 455 nm internal quantum efficiency, external quantum efficiency, fluorescence intensity, light absorption rate of the ⁇ -type Sialon phosphor were calculated by the following procedure.
- An ⁇ -type Sialon phosphor was used as a sample, and the sample was filled in a concave cell so that the surface was smooth.
- the concave cell was attached to the opening of the integrating sphere.
- Monochromatic light separated into a wavelength of 455 nm from a light emitting light source (Xe lamp) was introduced into the integrating sphere as excitation light of a phosphor using an optical fiber.
- the phosphor sample was irradiated with this monochromatic light, and the fluorescence spectrum of the sample was measured using a spectrophotometer (MCPD-7000 manufactured by Otsuka Electronics Co., Ltd.). From the obtained spectral data, the number of excited reflected light photons (Qref) and the number of fluorescent photons (Qem) were calculated. The number of excited reflected photons was calculated in the same wavelength range as the number of excited light photons, and the number of fluorescent photons was calculated in the range of 465 to 800 nm.
- a standard reflector (Spectralon (registered trademark) manufactured by Labsphere) with a reflectance of 99% was attached to the opening of the integrating sphere instead of the concave cell, and the spectrum of excitation light with a wavelength of 455 nm was obtained. It was measured. At that time, the number of excited photons (Qex) was calculated from the spectrum in the wavelength range of 450 to 465 nm.
- Qex the number of excited photons
- the external quantum efficiency is calculated by the formula shown below.
- External quantum efficiency (%) (Qem / Qex) x 100 Therefore, from the above equation, the external quantum efficiency has the following relationship.
- External quantum efficiency 455 nm Light absorption rate ⁇ Internal quantum efficiency When a standard sample of ⁇ -type Sialon phosphor (NIMS Standard Green lot No. NSG1301, manufactured by Sialon) was measured by the above measurement method, the external quantum efficiency was 55.
- the light absorption rate was 6%, the light absorption rate was 74.4%, and the internal quantum efficiency was 74.8%. Quantum efficiency and light absorption rate may fluctuate when the manufacturer of the measuring device, manufacturing lot number, etc. change. Therefore, if the manufacturer of the measuring device, manufacturing lot number, etc. change, the ⁇ -type sialon phosphor The measurement data is corrected using the standard sample of.
- ⁇ 700 nm light absorption rate> Except that the wavelength of the excitation light was changed from 455 nm to 700 nm, and the number of excitation light photons (Qex) and the number of excitation reflected light photons (Qref) were calculated from the spectrum in the wavelength range of 695 to 710 nm, the light absorption rate of ⁇ 455 nm light absorption rate>.
- the diffuse reflectance of the ⁇ -type Sialon phosphor was measured by attaching an integrating sphere device (ISV-469) to an ultraviolet-visible spectrophotometer (V-550) manufactured by JASCO Corporation. Baseline correction is performed with a standard reflector (Spectralon (registered trademark)), a solid sample holder filled with ⁇ -type Sialon phosphor (fluorescent material powder) is attached, and diffuse reflectance is measured in the wavelength range of 500 to 850 nm. did.
- the 800 nm diffuse reflectance (%) referred to in the present invention is a value of the diffuse reflectance particularly at 800 nm.
- the 800 nm diffuse reflectance was 95.7%.
- the value of 800 nm diffuse reflectance may fluctuate when the manufacturer of the measuring device, manufacturing lot number, etc. change. Therefore, if the manufacturer of the measuring device, manufacturing lot number, etc. change, the standard sample of ⁇ -type sialon phosphor is used. Is used as the reference value to correct the measurement data.
- ⁇ Saturation x, y> The chromaticity x and y are the values of CIE1931, and were measured by a spectrophotometer (MCPD-7000 manufactured by Otsuka Electronics Co., Ltd.). In the same manner as above, monochromatic light having a wavelength of 455 nm was irradiated, the excitation reflected light spectrum was measured in the range of 465 to 800 nm, and the chromaticities x and y were calculated. When a standard sample of ⁇ -type Sialon phosphor (NIMS Standard Green lot No. NSG1301, manufactured by Sialon) was measured by the above measurement method, the chromaticity x was 0.356.
- the value of chromaticity x may fluctuate when the manufacturer of the measuring device, manufacturing lot number, etc. change. Therefore, if the manufacturer of the measuring device, manufacturing lot number, etc. change, use a standard sample of ⁇ -type sialon phosphor. Correct the measurement data as a reference value.
- ⁇ Peak wavelength, half width> The peak wavelength and full width at half maximum were measured by a spectrophotometer (MCPD-7000 manufactured by Otsuka Electronics Co., Ltd.). In the same manner as above, monochromatic light having a wavelength of 455 nm was irradiated, the excitation reflected light spectrum was measured in the range of 465 to 800 nm, and the peak wavelength (nm) and half width of fluorescence were calculated. The full width at half maximum indicates the width (nm) of the intensity spectrum which is half the intensity of the peak wavelength.
- NSG1301, manufactured by Sialon was measured by the above measurement method, the peak wavelength was 543.3 nm and the half width was 53.3 nm.
- the peak wavelength and half-price range may fluctuate when the manufacturer of the measuring device, manufacturing lot number, etc. change, so if the manufacturer of the measuring device, manufacturing lot number, etc. change, the standard for ⁇ -type sialon phosphors The measurement data is corrected using the sample as a reference value.
- Fluorescent particle 30 Encapsulant 40 Composite 100 Light emitting device 120 Light emitting element 130 Heat sink 140 Case 150 First lead frame 160 Second lead frame 170 Bonding wire 172 Bonding wire
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Abstract
Description
しかしながら、α型サイアロン粒子の粒子径における検討は、いまだ十分なものとは言えない。
α型サイアロン粒子を含むα型サイアロン蛍光体であって、
レーザー回折散乱法で測定される当該α型サイアロン蛍光体の体積頻度粒度分布において、累積値が5%となる粒子径をD5、50%となる粒子径をD50、98%となる粒子径をD98としたとき、
((D98-D5)/D50)が、1.00以上8.00以下であり、
D50が10μm以下であり、及び、
下記の手順に従って測定される波長が455nmの励起光に対する内部量子効率が75%以上である、
α型サイアロン蛍光体が提供される。
(手順)
(1)当該α型サイアロン蛍光体を試料として用い、その試料を凹型セルに表面が平滑になるように充填する。その凹型セルを積分球の開口部に取り付けた後、積分球内に、発光光源から所定波長の単色光を、励起光として導入する。
25℃において、凹型セル内の試料に励起光を照射し、試料からのスペクトルを分光光度計で測定する。得られたスペクトルデータから、励起反射光フォトン数(Qref)及び蛍光フォトン数(Qem)を算出する。
(2)凹型セルの代わりに、反射率が99%の標準反射板を使用した以外は、上記(1)と同様にして、標準反射板を積分球の開口部に取り付け、励起光を標準反射板に照射し、波長455nmの励起光のスペクトルを測定し、得られたスペクトルデータから、励起光フォトン数(Qex)を算出する。
下記式に基づいて、上記の内部量子効率を求める。
内部量子効率=(Qem/(Qex-Qref))×100
発光素子と、
前記発光素子から照射された光を変換して発光する波長変換体と、
を備える、発光部材であって、
前記波長変換体は、上記のαサイアロン蛍光体を有する、
発光部材が提供される。
(1)当該α型サイアロン蛍光体を試料として用い、その試料を凹型セルに表面が平滑になるように充填する。その凹型セルを積分球の開口部に取り付けた後、積分球内に、発光光源から所定波長の単色光を、励起光として導入する。
25℃において、凹型セル内の試料に励起光を照射し、試料からのスペクトルを分光光度計で測定する。得られたスペクトルデータから、励起反射光フォトン数(Qref)及び蛍光フォトン数(Qem)を算出する。
(2)凹型セルの代わりに、反射率が99%の標準反射板を使用した以外は、上記(1)と同様にして、標準反射板を積分球の開口部に取り付け、励起光を標準反射板に照射し、波長455nmの励起光のスペクトルを測定し、得られたスペクトルデータから、励起光フォトン数(Qex)を算出する。
下記式に基づいて、上記の内部量子効率を求める。
内部量子効率=(Qem/(Qex-Qref))×100
D90は、例えば、5.5μm~35.0μm、好ましくは8.5μm~27.0μm、より好ましくは10.0μm~25.0μmである。D90を上記上限値以下とすることにより、適度に小粒子化したα型サイアロン粒子を含むα型サイアロン蛍光体を実現できる。D90を上記下限値以上とすることにより、455nmの蛍光強度を向上させることができる。
光吸収率=((Qex-Qref)/Qex)×100
(M)m(1-x)/p(Eu)mx/2(Si)12-(m+n)(Al)m+n(O)n(N)16-n ・・一般式(1)
α型サイアロン粒子を製造する工程は、公知の方法を使用してもよいが、例えば、原料混合粉末を焼成して焼成物を得る焼成工程と、焼成工程後の焼成物に、さらに解砕粉砕処理、分級処理、アニール処理及び酸処理等の後処理工程とを有してもよい。また、後処理工程において、ボールミル粉砕及び/又はデカンター処理をさらに行うことができる。
本実施形態の波長変換体は、発光素子から照射された光を変換して発光するものであって、上記α型サイアロン蛍光体を有するものである。波長変換体は、α型サイアロン蛍光体からのみで構成されてもよく、α型サイアロン蛍光体が分散した母材を含んでもよい。母材としては、公知のものを使用できるが、例えば、ガラス、樹脂、無機材料などが挙げられる。
本実施形態の発光装置について説明する。
本実施形態に係る発光装置は、発光光源(発光素子)と上記波長変換体とを含む発光部材を備える。
発光光源と波長変換体とを組み合わせることによって高い発光強度を有する光を発光させることができる。
図1の発光装置100は、例えば、発光素子120、ヒートシンク130、ケース140、第1リードフレーム150、第2リードフレーム160、ボンディングワイヤ170、ボンディングワイヤ172および複合体40を備える。
発光素子120としては、たとえば、近紫外から青色光に相当する300nm以上500nm以下の波長の光を発生するLEDチップを使用することができる。
複合体40として、発光素子120から発せられる励起光の波長を長波長化する波長変換体が用いられる。複合体40の具体例は、樹脂などの封止材30中に、α型サイアロン蛍光体を含む蛍光体粒子1が分散された波長変換体を使用してもよい。
(比較例1)
・混合工程
水分が1質量ppm以下、酸素分が1質量ppm以下である窒素雰囲気に保持したグローブボックス中で、α型窒化ケイ素粉末(Si3N4、SN-E10グレード、宇部興産社製)62.8g、窒化カルシウム粉末(Ca3N2、Materion社製)13.4g、窒化アルミニウム粉末(AlN、Eグレード、トクヤマ社製)22.7g、酸化ユーロピウム粉末(Eu2O3、RUグレード、信越化学工業社製)1.1gを混合し、原料混合粉末を得た。この原料混合粉末100gを、内部の容積が0.4リットルの蓋付きの円筒型窒化ホウ素製容器(デンカ社製、N-1グレード)に充填した。
この原料混合粉末を容器ごとカーボンヒーターの電気炉で大気圧窒素雰囲気中、1800℃で16時間の加熱処理を行った。なお、原料混合粉末に含まれる窒化カルシウムは、空気中で容易に加水分解しやすいので、原料混合粉末を充填した窒化ホウ素製容器はグローブボックスから取り出した後、速やかに電気炉に設置し、直ちに真空排気し、窒化カルシウムの反応を防いだ。容器から回収された橙色の塊状物は乳鉢で軽く解砕し、目開き150μmの篩を全通させ、粉末を得た。
その後、水中でボール経φ5サイズの窒化珪素ボールを用いて4時間解砕して、ろ過し、120℃5時間乾燥させ、150μmの篩を通過させ、蛍光体粉末を得た。
得られた蛍光体粉末をαサイアロン型蛍光体Aとして使用した。
水分が1質量ppm以下、酸素分が1質量ppm以下である窒素雰囲気に保持したグローブボックス中で、α型窒化ケイ素粉末(Si3N4、SN-E10グレード、宇部興産社製)56.56g、窒化カルシウム粉末(Ca3N2、Materion社製)12.02g、窒化アルミニウム粉末(AlN、Eグレード、トクヤマ社製)20.41g、酸化ユーロピウム粉末(Eu2O3、RUグレード、信越化学工業社製)1.00g、比較例1の蛍光体粉末10.00gを混合し、原料混合粉末を得た以外は、比較例1と同様にして蛍光体粉末を得た。
得られた蛍光体粉末をαサイアロン型蛍光体Bとして使用した。
比較例1で得られた蛍光体粉末に対して、下記の条件に従って、ボールミル及びデカンターをこの順番で行い、蛍光体粉末を得た。
得られた蛍光体粉末をαサイアロン型蛍光体Cとして使用した。
・ボールミル
イオン交換水0.8L、および比較例1で得られた蛍光体粉末(サンプル)50gを、ポット容量2Lのアルミナポットに入れた。
このサンプルを含むアルミナポットに対して、窒化ケイ素ボールφ5mm、ボール量1000g、回転数約150rpmの条件で、ボールミル粉砕を8時間行った。
その後、ろ過し、120℃5時間で乾燥し、保管した。
・デカンター
ボールミル処理したサンプルを、0.05wt%のヘキサメタリン酸Na水溶液に分散させ、2時間静置し、水面から4cmの深さの上澄みを除去することで微粉の除去を行った。除去の後はろ過し、120℃5時間で乾燥し、150μmの篩を通過させ、蛍光体粉末を得た。
水分が1質量ppm以下、酸素分が1質量ppm以下である窒素雰囲気に保持したグローブボックス中で、α型窒化ケイ素粉末(Si3N4、SN-E10グレード、宇部興産社製)56.56g、窒化カルシウム粉末(Ca3N2、Materion社製)12.02g、窒化アルミニウム粉末(AlN、Eグレード、トクヤマ社製)20.41g、酸化ユーロピウム粉末(Eu2O3、RUグレード、信越化学工業社製)1.00g、比較例1の蛍光体粉末10.00gを混合し、原料混合粉末を得た以外は、実施例1と同様にして蛍光体粉末を得た。
得られた蛍光体粉末をαサイアロン型蛍光体Dとして使用した。
焼成温度を1900℃に変更した以外は、実施例1と同様にして蛍光体粉末を得た。
得られた蛍光体粉末をαサイアロン型蛍光体Eとして使用した。
αサイアロン型蛍光体の粒子径分布を、レーザー回折・散乱法の粒子径測定装置であるMicrotrac MT3300EXII(マイクロトラック・ベル株式会社)により測定した。測定手順としては、ヘキサメタリン酸ナトリウムを0.05wt%混合したイオン交換水の水溶液100mlに、測定する蛍光体0.5gを投入し、超音波ホモジナイザー、Ultrasonic Homogenizer US-150E(株式会社日本精機製作所、Amplitude100%、発振周波数19.5±1kHz、チップサイズ20φ、振幅約31μmで、チップを液の中央部に配置して3分間分散処理した後、前記MT3300EXIIで粒度測定した。測定結果を表1に示す。
表1中、レーザー回折散乱法で測定されるα型サイアロン蛍光体の体積頻度粒度分布において、累積値が5%となる粒子径(μm)をD5、50%となる粒子径(μm)をD50、90%となる粒子径(μm)をD90、98%となる粒子径(μm)をD98とした。
α型サイアロン蛍光体の455nm内部量子効率、外部量子効率、蛍光強度、光吸収率は、以下の手順で算出した。
α型サイアロン蛍光体を試料として用い、その試料を凹型セルに表面が平滑になるように充填した。その凹型セルを積分球の開口部に取り付けた。この積分球内に、発光光源(Xeランプ)から455nmの波長に分光した単色光を、光ファイバーを用いて蛍光体の励起光として導入した。この単色光を蛍光体試料に照射し、試料の蛍光スペクトルについて分光光度計(大塚電子株式会社製MCPD-7000)を用いて測定した。
得られたスペクトルデータから、励起反射光フォトン数(Qref)及び蛍光フォトン数(Qem)を算出した。励起反射光フォトン数は、励起光フォトン数と同じ波長範囲で、蛍光フォトン数は、465~800nmの範囲で算出した。
また同じ装置を用い、凹型セルの代わりに、積分球の開口部に反射率が99%の標準反射板(Labsphere社製スペクトラロン(登録商標))を取り付けて、波長455nmの励起光のスペクトルを測定した。その際、450~465nmの波長範囲のスペクトルから励起光フォトン数(Qex)を算出した。
α型サイアロンの455nm光吸収率、内部量子効率は、次に示す計算式によって、求めた。
455nm光吸収率(%)=((Qex-Qref)/Qex)×100
内部量子効率(%)=(Qem/(Qex-Qref))×100
なお、外部量子効率は、以下に示す計算式により求められ、
外部量子効率(%)=(Qem/Qex)×100
従って、上記式より外部量子効率は以下に示す関係となる。
外部量子効率=455nm光吸収率×内部量子効率
なお、上記の測定方法によってβ型サイアロン蛍光体の標準試料(NIMS Standard Green lot No.NSG1301、サイアロン社製)を測定した場合、外部量子効率55.6%、光吸収率74.4%、内部量子効率74.8%であった。量子効率及び光吸収率は、測定装置のメーカー、製造ロットナンバーなどが変わると値が変動する場合があるため、測定装置のメーカー、製造ロットナンバーなどが変更となる場合は、β型サイアロン蛍光体の標準試料を基準値として測定データの補正を行う。
励起光の波長を455nmから700nmに変更し、励起光フォトン数(Qex)、励起反射光フォトン数(Qref)は695~710nmの波長範囲のスペクトルから算出した以外は、<455nm光吸収率>の測定手順と同様にして、下記の式に基づいて700nm光吸収率を算出した。
700nm光吸収率(%)=((Qex(700nm)-Qref(700nm))/Qex(700nm))×100
α型サイアロン蛍光体の拡散反射率は、日本分光社製紫外可視分光光度計(V-550)に積分球装置(ISV-469)を取り付けて測定した。標準反射板(スペクトラロン(登録商標))でベースライン補正を行い、α型サイアロン蛍光体(蛍光体粉末)を充填した固体試料ホルダーを取り付けて、500~850nmの波長範囲で拡散反射率を測定した。本発明でいう800nm拡散反射率(%)とは、特に800nmにおける拡散反射率の値である。
なお、上記の測定方法によってβ型サイアロン蛍光体の標準試料(NIMS Standard Green lot No.NSG1301、サイアロン社製)を測定した場合、800nm拡散反射率は95.7%であった。800nm拡散反射率は測定装置のメーカー、製造ロットナンバーなどが変わると値が変動する場合があるため、測定装置のメーカー、製造ロットナンバーなどが変更となる場合は、β型サイアロン蛍光体の標準試料を基準値として測定データの補正を行う。
色度x、yは、CIE1931の値であり、分光光度計(大塚電子株式会社製MCPD-7000)により測定した。上記と同様にして波長455nmの単色光を照射し、465~800nmの範囲で励起反射光スペクトルを測定し、色度x、yを算出した。
なお、上記の測定方法によってβ型サイアロン蛍光体の標準試料(NIMS Standard Green lot No.NSG1301、サイアロン社製)を測定した場合、色度xは0.356であった。色度xは測定装置のメーカー、製造ロットナンバーなどが変わると値が変動する場合があるため、測定装置のメーカー、製造ロットナンバーなどが変更となる場合は、β型サイアロン蛍光体の標準試料を基準値として測定データの補正を行う。
ピーク波長、半値幅は、分光光度計(大塚電子株式会社製MCPD-7000)により測定した。上記と同様にして波長455nmの単色光を照射し、465~800nmの範囲で励起反射光スペクトルを測定し、蛍光のピーク波長(nm)、半値幅を算出した。半値幅はピーク波長の強度の半分となる強度のスペクトルの幅(nm)を示す。
なお、上記の測定方法によってβ型サイアロン蛍光体の標準試料(NIMS Standard Green lot No.NSG1301、サイアロン社製)を測定した場合、ピーク波長543.3nm、半値幅53.3nmであった。ピーク波長、半値幅は測定装置のメーカー、製造ロットナンバーなどが変わると値が変動する場合があるため、測定装置のメーカー、製造ロットナンバーなどが変更となる場合は、β型サイアロン蛍光体の標準試料を基準値として測定データの補正を行う。
30 封止材
40 複合体
100 発光装置
120 発光素子
130 ヒートシンク
140 ケース
150 第1リードフレーム
160 第2リードフレーム
170 ボンディングワイヤ
172 ボンディングワイヤ
Claims (8)
- α型サイアロン粒子を含むα型サイアロン蛍光体であって、
レーザー回折散乱法で測定される当該α型サイアロン蛍光体の体積頻度粒度分布において、累積値が5%となる粒子径をD5、50%となる粒子径をD50、98%となる粒子径をD98としたとき、
((D98-D5)/D50)が、1.00以上8.00以下であり、
D50が10μm以下であり、及び、
下記の手順に従って測定される波長が455nmの励起光に対する内部量子効率が75%以上である、
α型サイアロン蛍光体。
(手順)
(1)当該α型サイアロン蛍光体を試料として用い、その試料を凹型セルに表面が平滑になるように充填する。その凹型セルを積分球の開口部に取り付けた後、積分球内に、発光光源から所定波長の単色光を、励起光として導入する。
25℃において、凹型セル内の試料に励起光を照射し、試料からのスペクトルを分光光度計で測定する。得られたスペクトルデータから、励起反射光フォトン数(Qref)及び蛍光フォトン数(Qem)を算出する。
(2)凹型セルの代わりに、反射率が99%の標準反射板を使用した以外は、上記(1)と同様にして、標準反射板を積分球の開口部に取り付け、励起光を標準反射板に照射し、波長455nmの励起光のスペクトルを測定し、得られたスペクトルデータから、励起光フォトン数(Qex)を算出する。
下記式に基づいて、上記の内部量子効率を求める。
内部量子効率(%)=(Qem/(Qex-Qref))×100 - 請求項1に記載のα型サイアロン蛍光体であって、
励起光の波長を455nmから700nmに変更し、励起光フォトン数(Qex)、励起反射光フォトン数(Qref)は695~710nmの波長範囲のスペクトルから算出した以外は上記の手順と同様にして、下記の式に従って求められる、波長700nmの励起光に対する光吸収率が10%以下である、α型サイアロン蛍光体。
光吸収率=(%)((Qex-Qref)/Qex)×100 - 請求項1又は2に記載のα型サイアロン蛍光体であって、
波長800nmの励起光に対する拡散反射率が90%以上である、α型サイアロン蛍光体。 - 請求項1~3のいずれか一項に記載のα型サイアロン蛍光体であって、
前記α型サイアロン粒子が、下記の一般式(1)で表されるEu元素を含有するα型サイアロンで構成される、α型サイアロン蛍光体。
(M)m(1-x)/p(Eu)mx/2(Si)12-(m+n)(Al)m+n(O)n(N)16-n ・・一般式(1)
(上記一般式(1)中、MはLi、Mg、Ca、Y及びランタニド元素(LaとCeを除く)からなる群から選ばれる1種以上の元素を表し、pはM元素の価数、0<x<0.5、1.5≦m≦4.0、0≦n≦2.0を表す。) - 請求項1~4のいずれか一項に記載のα型サイアロン蛍光体であって、
レーザー回折散乱法で測定される当該α型サイアロン蛍光体の体積頻度粒度分布において、累積値が90%となる粒子径をD90としたとき、
D90が、5.5μm以上35.0μm以下である、α型サイアロン蛍光体。 - 請求項1~5のいずれか一項に記載のα型サイアロン蛍光体であって、
D50が、1.0μm以上10.0μm以下である、α型サイアロン蛍光体。 - 発光素子と、
前記発光素子から照射された光を変換して発光する波長変換体と、
を備える、発光部材であって、
前記波長変換体は、請求項1~6のいずれか一項に記載のαサイアロン蛍光体を有する、
発光部材。 - 請求項7に記載の発光部材を備える、発光装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021520671A JPWO2020235297A1 (ja) | 2019-05-23 | 2020-04-24 | |
KR1020217041700A KR20220013389A (ko) | 2019-05-23 | 2020-04-24 | α형 사이알론 형광체, 발광 부재 및 발광 장치 |
CN202080037362.1A CN113874468A (zh) | 2019-05-23 | 2020-04-24 | α型塞隆荧光体、发光构件和发光装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019-097116 | 2019-05-23 | ||
JP2019097116 | 2019-05-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2020235297A1 true WO2020235297A1 (ja) | 2020-11-26 |
Family
ID=73458424
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2020/017774 WO2020235297A1 (ja) | 2019-05-23 | 2020-04-24 | α型サイアロン蛍光体、発光部材、および発光装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPWO2020235297A1 (ja) |
KR (1) | KR20220013389A (ja) |
CN (1) | CN113874468A (ja) |
WO (1) | WO2020235297A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112745835A (zh) * | 2021-01-26 | 2021-05-04 | 厦门大学 | 一种小粒径高量子效率氮化物荧光粉及其制备方法与应用、发光器件、显示器件 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005255885A (ja) * | 2004-03-12 | 2005-09-22 | National Institute For Materials Science | 蛍光体とその製造方法 |
JP2006257353A (ja) * | 2005-03-18 | 2006-09-28 | Fujikura Ltd | 粉末状蛍光体とその製造方法、発光デバイス及び照明装置 |
WO2008062781A1 (fr) * | 2006-11-20 | 2008-05-29 | Denki Kagaku Kogyo Kabushiki Kaisha | Substance fluorescente et son procédé de fabrication, et dispositif électroluminescent |
WO2010087348A1 (ja) * | 2009-01-27 | 2010-08-05 | 電気化学工業株式会社 | α型サイアロン蛍光体、その製造法及び発光装置 |
WO2013147066A1 (ja) * | 2012-03-29 | 2013-10-03 | 宇部興産株式会社 | 酸窒化物蛍光体粉末 |
WO2014077240A1 (ja) * | 2012-11-13 | 2014-05-22 | 電気化学工業株式会社 | 蛍光体、発光素子及び照明装置 |
WO2015115640A1 (ja) * | 2014-02-03 | 2015-08-06 | 宇部興産株式会社 | 酸窒化物蛍光体粉末およびその製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10133352A1 (de) | 2001-07-16 | 2003-02-06 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Beleuchtungseinheit mit mindestens einer LED als Lichtquelle |
-
2020
- 2020-04-24 WO PCT/JP2020/017774 patent/WO2020235297A1/ja active Application Filing
- 2020-04-24 JP JP2021520671A patent/JPWO2020235297A1/ja active Pending
- 2020-04-24 CN CN202080037362.1A patent/CN113874468A/zh active Pending
- 2020-04-24 KR KR1020217041700A patent/KR20220013389A/ko unknown
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005255885A (ja) * | 2004-03-12 | 2005-09-22 | National Institute For Materials Science | 蛍光体とその製造方法 |
JP2006257353A (ja) * | 2005-03-18 | 2006-09-28 | Fujikura Ltd | 粉末状蛍光体とその製造方法、発光デバイス及び照明装置 |
WO2008062781A1 (fr) * | 2006-11-20 | 2008-05-29 | Denki Kagaku Kogyo Kabushiki Kaisha | Substance fluorescente et son procédé de fabrication, et dispositif électroluminescent |
WO2010087348A1 (ja) * | 2009-01-27 | 2010-08-05 | 電気化学工業株式会社 | α型サイアロン蛍光体、その製造法及び発光装置 |
WO2013147066A1 (ja) * | 2012-03-29 | 2013-10-03 | 宇部興産株式会社 | 酸窒化物蛍光体粉末 |
WO2014077240A1 (ja) * | 2012-11-13 | 2014-05-22 | 電気化学工業株式会社 | 蛍光体、発光素子及び照明装置 |
WO2015115640A1 (ja) * | 2014-02-03 | 2015-08-06 | 宇部興産株式会社 | 酸窒化物蛍光体粉末およびその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112745835A (zh) * | 2021-01-26 | 2021-05-04 | 厦门大学 | 一种小粒径高量子效率氮化物荧光粉及其制备方法与应用、发光器件、显示器件 |
Also Published As
Publication number | Publication date |
---|---|
TW202113034A (zh) | 2021-04-01 |
JPWO2020235297A1 (ja) | 2020-11-26 |
KR20220013389A (ko) | 2022-02-04 |
CN113874468A (zh) | 2021-12-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7312187B2 (ja) | 蛍光体及び発光装置 | |
KR101115855B1 (ko) | 형광체와 그 제조 방법, 및 그것을 사용한 발광 소자 | |
JP7303822B2 (ja) | 蛍光体及び発光装置 | |
KR20110105777A (ko) | α형 사이알론 형광체, 그의 제조법 및 발광 장치 | |
WO2012033157A1 (ja) | β型サイアロン及び発光装置 | |
WO2022123997A1 (ja) | 蛍光体粉末、発光装置、画像表示装置および照明装置 | |
KR102336244B1 (ko) | 형광체 분말, 복합체 및 발광 장치 | |
WO2020235297A1 (ja) | α型サイアロン蛍光体、発光部材、および発光装置 | |
WO2022102512A1 (ja) | 蛍光体粉末、発光装置、画像表示装置および照明装置 | |
WO2022102503A1 (ja) | 蛍光体粉末、発光装置、画像表示装置および照明装置 | |
WO2022102511A1 (ja) | 蛍光体粉末、発光装置、画像表示装置および照明装置 | |
JPWO2019073864A1 (ja) | 赤色蛍光体及び発光装置 | |
US11434422B2 (en) | Phosphor powder, composite, and light-emitting device | |
CN112789343B (zh) | 荧光体板和使用它的发光装置 | |
WO2017155111A1 (ja) | 蛍光体、発光素子及び発光装置 | |
TWI838523B (zh) | α型矽鋁氮氧化物螢光體、發光構件、以及發光裝置 | |
JP7416995B1 (ja) | α型サイアロン蛍光体および発光装置 | |
TWI843832B (zh) | 螢光體粉末、複合體及發光裝置 | |
JP7252186B2 (ja) | 蛍光体粉末、複合体および発光装置 | |
WO2024101330A1 (ja) | 蛍光体、および発光装置 | |
WO2024101352A1 (ja) | 蛍光体、および発光装置 | |
TW202342698A (zh) | Eu賦活β型矽鋁氮氧化物螢光體粒子、β型矽鋁氮氧化物螢光體粉末及發光裝置 | |
CN116997634A (zh) | 荧光体粉末、复合体和发光装置 | |
CN114026201A (zh) | 荧光体板和使用该荧光体板的发光装置 | |
JP2020164798A (ja) | 蛍光体粉末、複合体および発光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 20809272 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2021520671 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 20217041700 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 20809272 Country of ref document: EP Kind code of ref document: A1 |