WO2020179352A1 - Appareil d'éclairage pour véhicule - Google Patents

Appareil d'éclairage pour véhicule Download PDF

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Publication number
WO2020179352A1
WO2020179352A1 PCT/JP2020/004836 JP2020004836W WO2020179352A1 WO 2020179352 A1 WO2020179352 A1 WO 2020179352A1 JP 2020004836 W JP2020004836 W JP 2020004836W WO 2020179352 A1 WO2020179352 A1 WO 2020179352A1
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WO
WIPO (PCT)
Prior art keywords
light
wavelength conversion
projection lens
laser light
photodetector
Prior art date
Application number
PCT/JP2020/004836
Other languages
English (en)
Japanese (ja)
Inventor
秀倫 曽根
一臣 村上
Original Assignee
株式会社小糸製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2019039158A external-priority patent/JP2020145012A/ja
Priority claimed from JP2019071175A external-priority patent/JP2020170783A/ja
Application filed by 株式会社小糸製作所 filed Critical 株式会社小糸製作所
Publication of WO2020179352A1 publication Critical patent/WO2020179352A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
    • F21S41/10—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source
    • F21S41/14—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
    • F21S41/16—Laser light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
    • F21S41/10—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source
    • F21S41/14—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by the light source characterised by the type of light source
    • F21S41/176—Light sources where the light is generated by photoluminescent material spaced from a primary light generating element
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
    • F21S41/20—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by refractors, transparent cover plates, light guides or filters
    • F21S41/25—Projection lenses
    • F21S41/255—Lenses with a front view of circular or truncated circular outline
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
    • F21S41/20—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by refractors, transparent cover plates, light guides or filters
    • F21S41/29—Attachment thereof
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
    • F21S41/40—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by screens, non-reflecting members, light-shielding members or fixed shades
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S41/00—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
    • F21S41/60—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by a variable light distribution
    • F21S41/65—Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps characterised by a variable light distribution by acting on light sources
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S45/00—Arrangements within vehicle lighting devices specially adapted for vehicle exteriors, for purposes other than emission or distribution of light
    • F21S45/70—Prevention of harmful light leakage
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V13/00—Producing particular characteristics or distribution of the light emitted by means of a combination of elements specified in two or more of main groups F21V1/00 - F21V11/00
    • F21V13/12—Combinations of only three kinds of elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V23/00—Arrangement of electric circuit elements in or on lighting devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30—Elements containing photoluminescent material distinct from or spaced from the light source
    • F21V9/32—Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters

Definitions

  • the present disclosure relates to a vehicular lamp, and more particularly to a vehicular lamp using a semiconductor laser (also called a laser diode, LD) as a light source.
  • a semiconductor laser also called a laser diode, LD
  • a vehicular lamp configured to use a semiconductor laser as a light source and to allow light from the light source to enter a projection lens is known (for example, see Patent Document 1).
  • a vehicle lamp using a semiconductor laser light source irradiates a laser beam emitted from a semiconductor laser element onto a phosphor that is a wavelength conversion layer, and mixes the laser beam with the light emitted when the phosphor is excited to illuminate a road surface. It is designed to be converted into white light having a proper energy and having appropriate energy for emission.
  • the laser light is high-energy light with high directivity, and for example, when the phosphor is damaged or dropped, the laser light and the phosphor do not come into sufficient contact with each other and are incident on the projection lens as high energy. It is not desirable to be released outside the lamp.
  • a vehicular lamp in which a semiconductor laser element and a wavelength conversion member are combined and the wavelength of laser light emitted from the semiconductor laser element is converted into white light by the wavelength conversion member and used as a light source.
  • vehicle lamps that use a semiconductor laser as a light source if an abnormality such as dropping or breakage occurs in the wavelength conversion member, the laser light is directly emitted with strong coherence without being scattered by the wavelength conversion member, which is dangerous. Is.
  • Patent Document 2 discloses that an opening (pinhole) is provided in a reflector that reflects the light of a light source toward a projection lens, and a photodetector is arranged behind the opening.
  • the projection lens is provided with a light-shielding portion that reflects a part of the light from the light source, and a photodetector is arranged outside the optical path of white light to detect the light reflected by the light-shielding portion. It is disclosed.
  • the photodetector and the light shielding part are arranged on the optical path of the laser light when the wavelength conversion member is dropped or damaged, that is, when it is assumed that the wavelength conversion member does not exist.
  • Japanese Patent Laid-Open No. 2013-38010 Japanese Patent Application Laid-Open No. 2016-58370 Japanese Patent Application Laid-Open No. 2018-106825 Japanese Patent Application Laid-Open No. 2016-207280
  • Patent Document 4 In order to prevent leakage of excitation light in vehicle lighting equipment using a semiconductor laser light source as in Patent Document 1, in Patent Document 4, in vehicle lighting equipment, when a phosphor is abnormal, a reflector that the laser light comes into contact with is used. It has been proposed to form an escape hole penetrating the reflector to allow the laser light to escape to the outside of the reflector and prevent the high energy laser light from being reflected forward from the reflector.
  • the above method requires a special structure such as an escape hole, and there is a problem that the cost becomes large. Further, due to the escape hole, there is a problem that the light in the central portion where the intensity of the white light is the highest cannot be utilized under normal conditions, and the light cannot be utilized effectively.
  • a first object of the present disclosure is to provide a vehicular lamp that does not require a special structure and is low-cost and that is fail-safe with respect to leakage of laser light when the wavelength conversion layer is abnormal. ..
  • Patent Documents 2 and 3 are the white light with the highest luminous intensity corresponding to the optical axis of the laser light when the wavelength conversion member has no abnormality and the vehicular lamp is operating normally. There is a problem in that the light in the central portion of the light enters the photodetector or the light shielding portion and does not enter the lens, and the light flux cannot be effectively used.
  • the present disclosure provides a technique for a vehicle lamp that uses a light source that is a combination of a semiconductor laser and a wavelength conversion member, and that can effectively monitor the leakage of laser light when an abnormality occurs in the wavelength conversion member while effectively using the light flux.
  • the second purpose is to do.
  • the vehicle lighting equipment absorbs a semiconductor laser element that emits laser light and at least a part of the laser light to emit wavelength conversion light.
  • a wavelength conversion layer that emits light and a projection lens that takes in the wavelength conversion light and emits it forward are provided, and the wavelength conversion layer is arranged so that its emission surface faces the projection lens, and the semiconductor is provided.
  • the laser element is arranged so that the light beam of the laser light is outside the range of the acceptance angle of the projection lens when it is assumed that the wavelength conversion layer is not present.
  • a semiconductor laser element is arranged on the optical axis of the projection lens, and a wavelength conversion layer is arranged between the semiconductor laser element and the projection lens.
  • the wavelength conversion layer when the wavelength conversion layer is functioning normally, at least a part of the wavelength of the laser light is converted by the wavelength conversion layer into white diffused light, which is then incident on the projection lens and moved forward. Is irradiated.
  • contact between the laser light and the wavelength conversion layer becomes insufficient or impossible, and laser light with high energy and high directivity enters the projection lens.
  • the semiconductor laser element, the wavelength conversion layer, and the projection lens are subjected to laser light when an abnormality occurs in the wavelength conversion layer.
  • the wavelength conversion layer is functioning normally, similarly, at least a part of the laser light is wavelength-converted by the wavelength conversion layer and is incident on the projection lens as white diffused light, and is forward. Is irradiated to.
  • the semiconductor laser element, the projection lens, and the wavelength conversion layer are When the wavelength conversion layer is arranged so that the rear surface coincides with the focal point of the projection lens, the relational expression: (L + f) x tan ( ⁇ - ⁇ ) -L x tan ⁇ > D / 2 (Equation 1) (Here, L is the distance from the semiconductor laser device to the rear surface of the wavelength conversion layer. f is the focal length of the projection lens, D is the pupil diameter of the projection lens, ⁇ is the angle of the main ray of the laser beam incident on the wavelength conversion layer with respect to the optical axis of the projection lens. ⁇ is the divergence angle of the laser light. ) It is also preferable that they are arranged so as to satisfy.
  • the wavelength conversion layer transmits the laser light from the semiconductor laser element and emits the wavelength converted light toward the projection lens.
  • the lens support part is provided that supports the projection lens, and the lens support part is provided with a light blocking member that absorbs or reflects the laser light.
  • the light shielding member includes a sensor that detects an irradiation state of the laser light and the wavelength conversion light.
  • the vehicle lighting equipment includes a semiconductor laser element that emits laser light and white light or white light by converting at least a part of the laser light into white light.
  • a wavelength conversion member that generates pseudo-white light a lens that captures the white light or the pseudo-white light and emits it forward as illumination light, and a translucent light detector that detects the laser light.
  • the photodetector is arranged on the optical path of the laser light in the case where the wavelength conversion member is not present, and is arranged between the wavelength conversion member and the emission surface of the illumination light. ..
  • the laser light when the lamp is operating normally, the laser light is incident on the lens as white light or pseudo-white light whose wavelength is at least partially converted by the wavelength conversion member.
  • a photodetector is arranged on the extended optical path of the laser light between the wavelength conversion member and the emission surface of the illumination light, but the photodetector is translucent. Therefore, the portion of the white light or the pseudo-white light having the highest luminous intensity can pass through the photodetector and enter the lens. Therefore, the luminous flux of white light can be effectively used.
  • the light detector arranged on the extended optical path of the laser light detects the laser light, it senses a change in the intensity of the laser light, in particular, when an abnormality such as damage or dropout of the wavelength conversion member occurs in the lighting equipment. Therefore, it is possible to properly monitor the leakage of the laser light when the wavelength conversion member is abnormal.
  • the photodetector is provided on the lens.
  • the photodetector is provided on the wavelength conversion member.
  • the photodetector generates a current according to the amount of received laser light, and the vehicle lamp outputs a detection signal according to the current, and the detection circuit. It is also preferable to further include a determination unit that determines an abnormality of the wavelength conversion member based on the signal, and a control unit that controls energization of the semiconductor laser element based on the determination result of the determination unit.
  • warning unit that warns the driver based on the determination result of the determination unit.
  • the vehicle lamp according to the mode for achieving the first object it is possible to enable fail-safe against laser light leakage at low cost without requiring a special structure.
  • the laser light when an abnormality occurs in the wavelength conversion member in the vehicle lighting equipment using a light source combining a semiconductor laser and a wavelength conversion member In order to detect the leakage of light, a translucent light detector was placed on the straight path of the laser light assuming that the wavelength conversion member does not exist, so that the light intensity is the highest when the wavelength conversion member is normal. It is possible to constantly detect the laser light while using the light in the central portion as the illumination light without being shielded by the light blocking member, the photodetector, the escape hole, or the like. Therefore, it is possible to monitor the leakage of laser light when an abnormality occurs in the wavelength conversion member while effectively utilizing the light flux.
  • FIG. 1 It is a vertical cross-sectional view of the vehicle lamp which concerns on 1st Embodiment of this disclosure, and shows schematic structure. It is a figure explaining the positional relationship of the projection lens, the semiconductor laser element, and the wavelength conversion layer in the normal state, and the state of the light ray at the time of light emission of the vehicle lamp which concerns on 1st Embodiment. In the circle shown by the solid line on the right side of the figure, an enlarged view of the part inside the circle shown by the solid line in the center is shown. It is a figure explaining the positional relationship of the projection lens, the semiconductor laser element, and the wavelength conversion layer at the time of abnormality, and the state of the light ray at the time of light emission of the vehicle lamp according to 1st Embodiment. FIG.
  • FIG. 2 is a vertical cross-sectional view of the vehicular lamp according to the first embodiment, which is the same as the vertical cross-sectional view in FIG.
  • FIG. 6 is a vertical cross-sectional view of a vehicle lamp according to a second embodiment of the present disclosure, showing a state of light rays in a normal state. It is a vertical cross-sectional view of the vehicle lamp which concerns on 2nd Embodiment, and shows the state of the light ray at the time of abnormality.
  • FIG. 5 is a vertical cross-sectional view of a vehicular lamp according to a third embodiment of the present disclosure.
  • FIG. 10 is an enlarged view of a rotary reflector of a vehicular lamp according to a seventh embodiment of the present disclosure. It is a horizontal sectional view of the vehicular lamp concerning an 8th embodiment of this indication.
  • an arrow UD indicates a vertical direction when the vehicular lamp is viewed from the front
  • an arrow FB indicates the same longitudinal direction
  • an arrow LR indicates the same lateral direction.
  • FIG. 1 is a vertical cross-sectional view schematically showing a schematic structure of a vehicular lamp (hereinafter, also simply referred to as “lamp”) 10 according to a first embodiment.
  • the vehicular lamp 10 is one of the left and right headlamp units of a vehicular headlamp device having a pair of headlamp units arranged on the left and right in front of the vehicle.
  • the pair of headlamp units have substantially the same configuration.
  • the vehicular lamp 10 includes a box-shaped lamp body 12 having an opening at the front, and a translucent front cover 14 that closes the opening of the lamp body 12.
  • a lamp chamber 18 is defined by the lamp body 12 and the front cover 14.
  • a light emitting device 20 In the lamp chamber 18, a light emitting device 20, a supporting member 22, an optical axis adjusting mechanism 24, a lens supporting portion 26, a projection lens 28, and an extension 30 are generally arranged.
  • the light emitting device 20 includes a cylindrical housing 31, a semiconductor laser element 32, and a wavelength conversion layer 34.
  • the rear end of the housing 31 is fixed to the support member 22.
  • an inclined surface 36 is formed of, for example, a metal such as aluminum.
  • a semiconductor laser element 32 is fixed on the inclined surface 36.
  • the inclined surface 36 functions as a heat sink.
  • a rectangular or circular fixing hole 38 is formed in the center of the front surface of the housing 31.
  • the wavelength conversion layer 34 is fitted into the fixing hole 38, and is fixed by adhesion with a transparent adhesive such as silicone or low melting point glass.
  • the semiconductor laser element 32 is a semiconductor light emitting device that emits laser light.
  • an element that emits laser light having a blue emission wavelength (about 450 nm) or a near-ultraviolet region (about 405 nm) is used.
  • the wavelength conversion layer 34 for example, a phosphor that is a composite of YAG (yttrium aluminum garnet) into which an activator such as cerium Ce is introduced and alumina Al 2 O 3 can be used.
  • the wavelength conversion layer 34 is a plate-shaped body or a layered body including an upper surface and a lower surface arranged substantially in parallel, and the thickness thereof can be appropriately set according to the target chromaticity.
  • wavelength conversion layer 34 a composite of APT (apatite) into which an activator such as europium Eu is introduced and BOS (barium orthosilicate) into which europium Eu or the like is activated may be used.
  • APT apatite
  • BOS barium orthosilicate
  • the wavelength conversion layer 34 absorbs at least a part of the laser light generated by the semiconductor laser element 32, converts the wavelength of the laser light, transmits the laser light, and emits white light generated by color mixing with the laser light from the semiconductor laser element 32.
  • the wavelength conversion layer 34 does not have to be composed only of the wavelength conversion layer main body, and may be, for example, one formed by stacking the above composites with sapphire or the like as a holding member.
  • the fixing hole 38 may have an elliptical shape, and may have any shape as long as it absorbs at least a part of the laser light generated in the semiconductor laser element 32, converts the wavelength, and transmits the laser light. ..
  • the support member 22 is a metal member having a rectangular shape in front view, supports the light emitting device 20, and also connects the light emitting device 20 to the optical axis adjusting mechanism 24.
  • the optical axis adjusting mechanism 24 includes a leveling actuator 40 and a pivot 42.
  • the leveling actuator 40 is attached to the lower part of the support plate 46 via the screw 44, and the pivots 42 are attached to the three corners of the support plate 46 in a front view (not shown). In this way, the support member 22 is supported by the lamp body 12 via the optical axis adjusting mechanism 24.
  • the optical axis adjusting mechanism 24 can tilt the support member 22 with respect to the lamp body 12 by driving the leveling actuator 40. As the support member 22 tilts, the light emitting device 20 and the projection lens 28 tilt, and the optical axis O of the illumination light can be adjusted.
  • the specific configuration of the optical axis adjusting mechanism 24 is not limited to this, and a known configuration can be appropriately adopted.
  • the lens support portion 26 is, for example, a cylindrical body made of translucent resin.
  • the lens support portion 26 includes a holding portion 48 and a leg portion 50, holds the projection lens 28, and is connected to the support member 22.
  • the lens support portion 26 is provided with a flange at the rear end of the leg portion 50 and is fixed to the support member 22 with an appropriate configuration.
  • a light blocking member 49 for blocking the laser light and a sensor 51 for detecting the light emitting state of white light are provided on the inner wall of the leg portion 50 of the lens support portion 26, a light blocking member 49 for blocking the laser light and a sensor 51 for detecting the light emitting state of white light. Details of the light-shielding member 49 and the sensor 51 will be described later.
  • the projection lens 28 is an aspherical lens including a convex surface on the front side and a flat surface on the rear side, and is made of, for example, a transparent resin such as acryl or another translucent material.
  • the projection lens 28 is fixedly held by the holding portion 48 and is arranged on the optical axis O extending in the front-rear direction of the vehicle.
  • the projection lens 28 receives the white light incident from the light emitting device 20 and emits it toward the front of the lamp 10.
  • White light emitted from the emission surface of the projection lens 28 is directed to the front cover 14, passes through the front cover 14, and is emitted to the front of the lamp 10. Due to the action of the projection lens 28, a desired light distribution pattern is formed in front of the lamp 10.
  • the extension 30 is a member made of metal or resin that plays a role of blindfolding the periphery of the projection lens 28 from the front.
  • FIGS. 2 and 3 are diagrams schematically illustrating the positional relationship between the projection lens 28, the semiconductor laser element 32, and the wavelength conversion layer 34, and the state of light rays during light emission.
  • FIG. 2 shows a normal state, that is, a state in which the wavelength conversion layer 34 is fixed in the fixing hole and is not dropped, damaged, or deteriorated.
  • FIG. 3 shows a state in which the wavelength conversion layer 34 is abnormal, that is, the wavelength conversion layer 34 does not operate normally due to dropout, damage, deterioration, or the like.
  • the projection lens 28, the wavelength conversion layer 34, and the semiconductor laser element 32 include the light rays (upper ray UB and lower ray LB) of the laser light emitted from the semiconductor laser element 32, assuming that the wavelength conversion layer 34 does not exist.
  • the entire light beam) is arranged so as to be outside the range of the acceptance angle ⁇ of the projection lens 28.
  • the wavelength conversion layer 34 is arranged so that its rear surface is located at the focal point A of the projection lens 28 and directly faces the projection lens 28.
  • the distance between the semiconductor laser device 32 and the rear surface of the wavelength conversion layer 34 is L.
  • the focal length of the projection lens 28 is f
  • the pupil diameter of the projection lens 28 is D
  • the angle (arrangement angle of the wavelength conversion layer) of the principal ray MB of the laser light incident on the wavelength conversion layer 34 with respect to the optical axis O of the projection lens 28 is ⁇
  • the divergence angle of the laser beam is expressed by ⁇ , the following equation (1) (L + f) x tan ( ⁇ - ⁇ ) -L x tan ⁇ > D / 2 (1) It is arranged so as to satisfy.
  • arranging the wavelength conversion layer 34 at the focal point A of the projection lens 28 does not only mean arranging the wavelength conversion layer 34 at the focal point A of the projection lens 28 completely. , May be included in the vicinity of the focal point A without departing from the object of the present disclosure.
  • the laser light emitted from the semiconductor laser element 32 is incident on the back surface of the wavelength conversion layer 34 at a divergence angle ⁇ , as shown in an enlarged view within a solid circle in FIG.
  • the symbol MB represents the chief ray of the laser light
  • the symbol UB represents the upper ray
  • the symbol LB represents the lower ray.
  • the wavelength of the laser light that has entered the wavelength conversion layer 34 is converted and emitted as white diffused light WL toward the projection lens 28. Since the wavelength conversion layer 34 has a perfect diffusing surface, the white diffused light WL has a circular locus of light intensity as shown in the figure, and the intensity of the central portion (0°) that coincides with the optical axis O of the projection lens 28 is the most.
  • the Lambertian characteristic is high and the periphery of the center part is attenuated by the cosine characteristic.
  • light within the range of the acceptance angle ⁇ of the projection lens 28 enters the projection lens 28 and is emitted as illumination light IL toward the front of the lamp 10.
  • the emission surface of the wavelength conversion layer 34 is orthogonal to the optical axis O of the projection lens 28, and the wavelength conversion layer 34 is disposed so as to face the back surface of the projection lens 28, whereby the white diffused light WL It becomes possible to use the central part. As a result, it is possible to efficiently use the laser beam.
  • the wavelength conversion layer 34 does not exist, as shown in FIG. 3, the light beam of the laser light emitted from the semiconductor laser element 32 passes through the rear focal point A of the projection lens 28 and the optical axis O of the projection lens 28. Travels on a straight optical path forming an angle ⁇ with. At this time, although the laser light is slight, it diverges at the divergence angle ⁇ . However, since the lower ray LB of the laser light is always arranged so as to be outside the range of the acceptance angle ⁇ of the projection lens 28, the laser light emitted from the semiconductor laser element 32 has high energy and high directivity. Are not taken into the projection lens 28. As a result, it is possible to prevent high-energy laser light from passing through the projection lens 28 and being irradiated forward.
  • the light shielding member 49 is, for example, a curved plate-shaped member made of black resin, or made of various metals such as iron, nickel, aluminum, and copper, or an alloy such as stainless steel, the surface of which is black-painted.
  • the light-shielding member 49 is provided along the inner surface of the leg portion 50 of the lens support portion 26.
  • the laser light that has passed through the rear focal point A of the projection lens 28 is incident on the light-shielding member 49 provided on the lens support portion 26 as shown in FIG. 4 with high energy. Become.
  • the laser light is completely blocked and absorbed by the lens support portion 26 by the light blocking member 49. Therefore, it is possible to prevent the high-energy laser light from leaking into the lamp chamber 18. Therefore, it is possible to prevent the laser light leaking into the lamp chamber 18 from being indirectly irradiated to the front of the lamp 10 by being reflected by a member in the lamp chamber 18 a plurality of times.
  • the sensor 51 is connected to a control circuit (not shown).
  • the control circuit is configured to be able to control energization of the semiconductor laser element 32 based on the detection result of the sensor 51.
  • the sensor 51 is provided in the light shielding member 49 at a position where at least a part of the high-energy laser light is incident when the wavelength conversion layer 34 does not exist.
  • the senor 51 for example, a photosensor such as a photodiode that detects the wavelength of white light WL or laser light can be used.
  • the photo sensor detects a change in the received light amount or chromaticity of the white light WL or the laser light of the sensor 51 as an abnormality.
  • a temperature sensor such as a thermistor may be used as the sensor 51.
  • the temperature sensor detects, as an abnormality, a temperature change that occurs because the light shielding member 49 having a light shielding property absorbs high-energy laser light.
  • a strain sensor may be used as the sensor 51.
  • the strain sensor detects the strain of the lens support portion 26 as an abnormality caused by a temperature change caused by the light shielding member 49 absorbing high-energy laser light.
  • the laser light in a high energy state is configured not to be taken into the projection lens 28 when the wavelength conversion layer 34 has an abnormality such as dropping, damage, deterioration or the like.
  • the light shielding member 49 provided on the inner surface of the leg portion 50 of the lens support portion 26 prevents the high energy laser light from leaking to the lamp chamber 18. Therefore, it is unlikely that the laser light having a strong directivity is emitted to the outside of the lamp 10.
  • the light shielding member 49 is provided with the sensor 51 such as the photo sensor, the temperature sensor, and the strain sensor, it is possible to monitor whether or not the lamp 10, particularly the wavelength conversion layer 34 is operating normally. Is. Further, when the sensor 51 detects an abnormal state, by controlling so that the power supply to the semiconductor laser element 32 is stopped, it is possible to prevent a danger such as looking into the lamp 10 from a short distance, so that the lamp 10 is safe. Improves sex.
  • FIG. 5 and 6 are vertical cross-sectional views of the vehicular lamp 110 according to the second embodiment of the present disclosure.
  • FIG. 5 shows a normal state, that is, a state in which the wavelength conversion layer 34 is not dropped, damaged, deteriorated, or the like.
  • FIG. 6 shows a state in which the wavelength conversion layer 34 is abnormal, that is, the wavelength conversion layer 34 does not operate normally due to dropout, damage, deterioration, or the like.
  • the vehicular lamp 110 has a configuration similar to that of the vehicular lamp 10 except for the following points.
  • the lens support portion 26 is made of, for example, a translucent resin, whereas the lens support portion 126 is made of black resin, various metals such as iron, nickel, aluminum, and copper, and alloys such as stainless steel. Will be done.
  • the lens support 126 is made of metal, the lens support 126 may be painted black. That is, the lens support portion 126 does not have a separate light shielding member, but has a light shielding property by being made of a light shielding material or a light absorbing material.
  • the lens support portion 126 is a cylindrical body, and includes a holding portion 148 that holds the projection lens 28 and a leg portion 150.
  • the projection lens 28 is engaged and held by the holding portion 148, and at the rear end of the leg portion 150. , Connected to the support member 122.
  • a fixing hole 138 for fixing the wavelength conversion layer 34 is opened in the center of the bottom surface 139 of the lens support 126, and the wavelength conversion layer 34 is fixed.
  • the sensor 51 is directly provided on the lens support portion 126.
  • the lamp 110 includes a light emitting unit 120 instead of the unitized light emitting device 20.
  • the light emitting section 120 is defined by a standing wall on the front side of the support member 122 and a bottom surface of the lens support section 126.
  • the light emitting section 120 includes the wavelength conversion layer 34 on the bottom surface of the lens supporting section 126 and the semiconductor laser element 32.
  • the semiconductor laser device 32 is arranged on an inclined surface 136 formed on the front surface of the support plate 146 of the support member 122.
  • the projection lens 28, the wavelength conversion layer 34, and the semiconductor laser element 32 are provided with a laser beam emitted from the semiconductor laser element 32 when it is assumed that the wavelength conversion layer 34 does not exist.
  • the light ray (the entire light ray including the upper light ray UB and the lower light ray LB) is arranged so as to be outside the range of the capture angle ⁇ of the projection lens 28.
  • the specific positional relationship satisfies Expression (1).
  • the laser light emitted from the semiconductor laser element 32 is incident on the wavelength conversion layer 34, is wavelength-converted, and becomes white diffused light having Lambersian characteristics. , It is incident on the projection lens 28 and is irradiated forward as illumination light.
  • the laser beam emitted from the semiconductor laser element 32 travels in the extended optical path of the laser beam in a high directivity and high energy state, and functions as a light shielding member 126. It enters the inner wall of the light and is shielded from light. Further, at least a part of the light enters the sensor 51 and is detected as an abnormality.
  • the wavelength conversion layer 34 is fixed to the bottom surface 139 of the lens supporting portion, and the light emitting portion 120 is defined by the lens supporting portion 126 and the supporting member 122. At the same time when the part 126 is assembled, the assembly of the light emitting part 120 is completed. As a result, the lamp 110 can be easily assembled.
  • the semiconductor laser element 32 is provided above the optical axis O of the projection lens 28, but the present invention is not limited to this, and the projection lens 28, the wavelength conversion layer 34, and the semiconductor laser element 32 are provided. With the above positional relationship, the arrangement of the semiconductor laser elements 32 can be designed according to the desired light distribution pattern.
  • FIG. 7 is a vertical cross-sectional view schematically showing the schematic structure of the vehicular lamp 210 according to the third embodiment of the present disclosure.
  • the vehicular lamp 210 is one of the left and right headlamp units of a vehicular headlamp apparatus having a pair of headlamp units arranged on the left and right in front of the vehicle.
  • the pair of headlamp units have substantially the same configuration.
  • a light emitting device 220 In the lamp chamber 18, a light emitting device 220, a support member 222, an optical axis adjusting mechanism 224, a lens support portion 226, a projection lens 228, a photodetector 230, and an extension 232 are generally arranged.
  • the light emitting device 220 is configured to convert the excitation light into white light or pseudo white light and emit it.
  • the pseudo white light is pseudo white light generated by mixing the blue laser light and the yellow light in which a part of the blue laser light is wavelength-converted by the yellow wavelength conversion member.
  • white light may include “pseudo white light”.
  • the light emitting device 220 is, for example, a so-called CAN package type laser diode (LD) module. As shown in FIG. 8A, the light emitting device 220 includes a substrate 234, a cylindrical casing 236, a semiconductor laser element 238, a condenser lens 239, and a wavelength conversion member 240, and the casing 236 and the substrate. 234 and the semiconductor laser device 238.
  • LD CAN package type laser diode
  • the substrate 234 supports the semiconductor laser element 238, and also includes an energization connector and a control connector (not shown), and is connected to an energization device and a control device (not shown). In addition, it also has a function of radiating heat through the support member 222 that functions as a heat sink.
  • the front surface of the housing 236 is provided with a circular emission port 242 for emitting light from the semiconductor laser element 238 in a front view.
  • a wavelength conversion member 240 is fitted into the emission port 242, and is fixedly adhered by a translucent adhesive such as silicone or low melting point glass.
  • the condenser lens 239 is provided between the wavelength conversion member 240 and the semiconductor laser element 238 and condenses the light emitted from the semiconductor laser element 238 onto the wavelength conversion member 240.
  • the semiconductor laser element 238 can adopt the same configuration as the semiconductor laser element 32.
  • the semiconductor laser element 238 is arranged on the optical axis O 1 of the projection lens 228.
  • the wavelength conversion member 240 can adopt the same configuration as the wavelength conversion layer 34.
  • the wavelength conversion member 240 absorbs at least a part of the laser light generated by the semiconductor laser element 238, converts the wavelength, transmits the wavelength, and transmits white light or pseudo white light by color mixing with the laser light from the semiconductor laser element 238. Is released.
  • the emission port 242 can adopt the same structure as the fixed hole 38.
  • the support member 222 is made of metal such as aluminum and is a rectangular member in a front view.
  • the support member 222 supports the light emitting device 220 and also connects the light emitting device 220 to the optical axis adjusting mechanism 224.
  • the optical axis adjusting mechanism 224 includes a leveling actuator 244 and a pivot 246.
  • the leveling actuator 244 is attached to the lower portion of the support member 222 via the screw 248, and the pivots 246 are attached to the three corners of the support member 222 in a front view (not shown).
  • the optical axis adjusting mechanism 224 can tilt the support member 222 with respect to the lamp body 12 by driving the leveling actuator 244. With the tilt of the support member 222, the light emitting device 220 and the projection lens 228 are tilted, and the optical axis of the illumination light can be adjusted.
  • the specific configuration of the optical axis adjusting mechanism 224 is not limited to this, and a known configuration can be appropriately adopted.
  • the lens support portion 226 is, for example, a cylindrical body made of translucent resin.
  • the lens support portion 226 includes a lens holding portion 227 and a leg portion 229, holds the projection lens 228, and is connected to the support member 222.
  • the lens support portion 226 includes a flange at the rear end of the leg portion 229, and is fixed to the support member 222 with an appropriate configuration.
  • the lens support portion 226 does not need to be entirely transparent, and may be formed by two-color molding in which the lens holding portion 227 is a transparent resin and the legs 229 are a transparent resin.
  • the photodetector 230 is, for example, a translucent photodiode composed of graphene and several-layer graphene in which iron (III) chloride FeCl 3 is intercalated as described in Non-Patent Document 1. This is the photodetector used.
  • This translucent photodiode is produced as follows (see Non-Patent Document 1). First, several layers of graphene (Few/Layer/Graphen, FLG) obtained by a mechanical exfoliation method are deposited on a silicon dioxide SiO 2 substrate heavily doped with Si.
  • graphene Few/Layer/Graphen, FLG
  • the SiO 2 substrate on which the above-mentioned few layers of graphene are deposited is brought into contact with anhydrous FeCl 3 powder at a temperature of 360° C. and 2 ⁇ 10 ⁇ 4 Torr by a known method for 7.5 hours to make FeCl 3 intercalation. Perform culling. In this process, FeCl 3 molecules permeate between the graphene layers of FLG to form FeCl 3 -FLC.
  • a chromium/gold contact is formed on each of the FeCl 3 -FLC layer and the FLG layer and used as a photodetector 230.
  • the photodetector 230 is provided on the rear surface of the lens support portion 226 so as to match the optical axis O 1 of the projection lens 228.
  • the photodetector 230 is fixed to the rear surface of the lens support portion 226 using a translucent adhesive such as silicone or low melting point glass.
  • the photodetector 230 extends in the vertical direction over the entire length of the projection lens 228, and is formed in a substantially rectangular shape having a width w in the horizontal direction and a vertically long length in a front view. Further, the photodetector 230 may be formed so as to cover the entire entrance surface or exit surface of the projection lens 228 as described later in the sixth to eighth embodiments.
  • the photodetector 230 is connected to a current-voltage conversion circuit 252 described later.
  • the current-voltage conversion circuit 252 is arranged outside the lens support portion 226 by a known method so as not to prevent the light from being taken into the projection lens 228.
  • the current-voltage conversion circuit 252 is connected to a control device (not shown) by metal wiring or the like.
  • the photodetector 230 detects light having the same wavelength as the laser light that is excitation light, and generates a current according to the amount of received light. Further, in order to avoid erroneous detection of white light and laser light, the photodetector 230 is configured to be able to distinguish between light of the wavelength of white light and light of the wavelength of laser light, or , The light of the wavelength of white light is not detected.
  • the wavelength selectivity of the sensitivity of the photodetector 230 can be realized by, for example, the wavelength response characteristic of the photodiode itself or the combined use of a high pass/low pass filter.
  • the projection lens 228 is an aspherical lens including a convex surface on the front side and a flat surface on the rear side, and is made of, for example, a transparent resin such as acrylic resin or another translucent material.
  • the projection lens 228 is fixedly held by the lens holding portion 227 and arranged on the optical axis O 1 extending in the vehicle front-rear direction.
  • the projection lens 228 receives the white light WL incident from the light emitting device 220 and emits it as the illumination light IL toward the front of the lamp 210.
  • the extension 232 is a member made of metal or resin that plays a role of covering the periphery of the projection lens 228 from the front.
  • the wavelength conversion member 240 is fixed so as not to easily fall off the emission port 242.
  • the light may drop from the emission port 242, may be displaced from the original mounting position, may be wholly or partially melted, may be partially chipped, etc.
  • the possibility that all or part of the conversion member 240 disappears from its original position cannot be completely denied.
  • FIG. 8A is a plan view in a normal state, that is, when the wavelength conversion member 240 is fixed to the emission port 242.
  • FIG. 8B is a plan view at the time of abnormality, that is, when the wavelength conversion member 240 does not exist.
  • the laser light emitted from the semiconductor laser element 238 is condensed by the condenser lens 239 and enters the wavelength conversion member 240.
  • the laser light LB 1 incident on the wavelength conversion member 240 is wavelength-converted and emitted as white diffused light WL toward the projection lens 228 in the first angular range ⁇ 1.
  • the white light WL Since the wavelength converting member 240 has a perfect diffusing surface, the white light WL has the highest intensity in the central portion that coincides with the optical axis O 1 of the projection lens 228, and the Lambertian that attenuates the periphery of the central portion with the cosine characteristic. Shows the characteristics.
  • the white light WL is captured by the projection lens 228 within the range of the capture angle of the projection lens 228, and is emitted to the front of the projection lens 228 as illumination light IL (FIG. 7).
  • the light in the central portion of the white light WL (pseudo white light) is incident on the photodetector 230.
  • the photodetector 230 has a light-transmitting property, most of the light is attenuated though it is slightly attenuated. It is incident on the projection lens 228.
  • the laser light included in the pseudo white light WL is detected by the photodetector 230.
  • the illumination light IL emitted from the emission surface of the projection lens 228 goes to the front cover 14, passes through the front cover 14, and is emitted to the front of the lamp 210. Due to the action of the projection lens 228, a desired light distribution pattern is formed in front of the lamp 210.
  • the laser light emitted from the semiconductor laser element 238 does not act on the wavelength conversion member 240 and goes straight along the optical axis O 1 of the projection lens 228.
  • the lateral width w of the photodetector 230 is configured to be larger than the beam diameter of the laser beam LB 1 from the semiconductor laser element 238. However, it is preferable that the lateral width w of the photodetector 230 is as small as possible within a range larger than the beam diameter of the laser light LB 1 . Since the photodetector 230 has a light-transmitting property, the white light WL is transmitted therethrough, but it may be slightly attenuated.
  • the vehicle lamp 210 When the laser light LB 1 is incident on the photodetector 230, the vehicle lamp 210 is configured so that the power supply to the semiconductor laser element 238 is controlled according to the detection signal thereof, as will be described later. However, in a state of high coherence, the light is not irradiated to the front of the lamp 210.
  • FIG. 10 is a block diagram illustrating a control system of the lamp 210, which uses the photodetector 230.
  • Current-voltage conversion circuit 252 includes a resistor R 1 provided on a path of the current I 1, the voltage drop VD 1 reverse current caused by the photovoltaic effect of the photodetector 230 caused by flowing through the resistor R 1
  • the detection signal S corresponding to the above is output.
  • the detection signal S linearly changes with respect to the current I 1 with a slope according to the resistance value of the resistor R 1 .
  • the determination unit 254 is a circuit that compares the detection signal S with a preset threshold value to determine the presence or absence of an abnormality in the wavelength conversion member 240.
  • the determination unit 254 constitutes a control device of the lamp 210 together with a control unit 256 and a warning unit 258 described later.
  • Examples of the abnormality of the wavelength conversion member 240 include cracks, detachment, melting, and deterioration over time of the wavelength conversion member 240.
  • the wavelength conversion member 240 is functioning normally, the ratio of the laser light included in the light incident on the photodetector 230 is constant, but when an abnormality occurs, the laser light and the wavelength conversion member 240 come into contact with each other. Becomes insufficient and the ratio of laser light increases.
  • the wavelength conversion member 240 is completely dropped or damaged, the light incident on the photodetector 230 is only the laser light. Such an abnormality may occur suddenly or may occur over time.
  • the determination unit 254 has, for example, a normal state in which the wavelength conversion member 240 is functioning normally, an abnormal state in which the wavelength conversion member 240 is completely removed, and some abnormality in the wavelength conversion member 240.
  • Three thresholds Th 1 , Th 2 and Th 3 are preset as thresholds at the boundaries of the four stages of the presumed attention level 1 and attention level 2.
  • the third threshold value Th 3 is set to a limit value that may cause a danger to an oncoming vehicle or the like when the laser light is emitted to the outside of the lamp 210 in excess of Th 3 .
  • the determination unit 254 determines that the state of the lamp 210 (that is, the wavelength conversion member 240) is the corresponding state when the value of the detection signal S output from the photodetector 230 is in the detection signal range of Table 1. ..
  • the control unit 256 is a circuit that controls the light emission of the semiconductor laser element 238 by controlling the energization of the semiconductor laser element 238.
  • the configuration is not particularly limited, and a known circuit can be used.
  • the control unit 256 is configured to control the light emission and the amount of light emitted to the semiconductor laser element 238 according to the determination result of the determination unit 254.
  • the warning unit 258 is a circuit that warns the driver by notifying various higher-level ECUs (Electronic, Control, Unit) based on the judgment result of the judgment unit 254.
  • the warning to the driver may be, for example, a display for calling attention to the instrument panel, a warning by voice/signal sound, a warning by an independent warning light, or the like.
  • FIG. 12 is a flowchart of a process of detecting an abnormality of the wavelength conversion member 240 in the lamp 210. When the lamp 210 is turned on, the process starts.
  • step S101 the photodetector 230 constantly or at predetermined intervals monitors the laser light incident on the photodetector 230, and the current-voltage conversion circuit 252 outputs the detection signal S.
  • step S102 the determination unit 254 determines whether or not the detection signal S is less than or equal to the first threshold value Th 1 .
  • control unit 256 When the detection signal S is less than or equal to the first threshold Th 1 (Yes), the control unit 256 continues energizing the semiconductor laser device 238 in step S103, and then returns to step S101 to detect the detection signal. The output of S (monitoring of laser light) is continued.
  • the determination unit 254 determines that the detection signal S is the second threshold Th 2 or less in step S104. Determine if it exists.
  • control unit 256 controls the energization of the semiconductor laser element 238 so that the light amount decreases in step S105.
  • step S106 the warning unit 258 gives a warning to notify the driver that the lamp 210 is in a state requiring attention. After that, the process returns to S101 and the output of the detection signal S (monitoring of the laser beam) is continued. However, the warning is continuously given until Yes in the repeated step S102.
  • the processes of steps S105 and S106 are not limited to this order, and may be performed at the same time or in the reverse order.
  • the warning in step S106 allows the driver to recognize that the lamp 210 is abnormal and to repair the vehicle, such as replacing the lamp 210. Further, when the repair is not performed and the abnormality of the wavelength conversion member 240 is not eliminated, the warning state is not released, so that the driver can be urged to perform the repair more reliably.
  • the determination unit 254 determines that the detection signal S is the third threshold value Th 3 in step S107. Determine if it is:
  • control unit 256 controls the energization of the semiconductor laser element 238 so that the light amount further decreases in step S108.
  • step S109 as in step S106, the warning unit 258 issues a warning that the lamp 210 is in a state requiring attention. At this time, it is preferable to give a warning so that it can be recognized that the degree of abnormality is higher than the warning in step S106.
  • the warning in step S106 is displayed in yellow light, while the warning in step S109 is displayed in blinking yellow, etc., so that it can be detected that the attention level is higher. Good to do. By doing so, it becomes possible to make the driver aware of the urgency, and it becomes possible to take prompt repairs.
  • steps S108 and S109 are not limited to this order, and may be performed simultaneously or in the reverse order.
  • step S106 After that, the process returns to S101 and the output of the detection signal S (monitoring of the laser beam) is continued, but the warning is continuously issued until Yes in the repeated step S102.
  • the effect is similar to that of step S106.
  • step S107 when the detection signal S exceeds the third threshold value Th 3 (in the case of No), the control unit 256 immediately stops energizing the semiconductor laser element 238 in step S110. , Turn off the lamp 210.
  • the energization is immediately stopped and the lamp 210 can be turned off. Therefore, it is possible to reliably prevent the high-energy laser light that may be dangerous to an oncoming vehicle or the like from being emitted to the outside of the lamp 210.
  • step S111 the warning unit 258 gives a warning to notify the driver that the lamp 210 has been turned off due to an abnormality.
  • the warning in step S109 is a blinking yellow display
  • the above warning allows the driver to stop the vehicle promptly after confirming that the lamp 210 has been turned off.
  • control unit 256 and the warning unit 258 perform the control for one determination result by the determination unit 254, respectively, but the control unit 256 only fails. It is possible to achieve the goal of being safe. However, performing both the control and the warning is more advantageous because the driver can easily recognize the abnormal state.
  • the laser light when the lamp 210 is operating normally, the laser light is white light whose wavelength is at least partially converted by the wavelength conversion member 240. Alternatively, it enters the lens as pseudo-white light.
  • the photodetector 230 is arranged on the extended optical path of the laser light between the wavelength conversion member 240 and the exit surface of the projection lens 228 which is the exit surface of the illumination light, but the photodetector 230 is transparent. is there. Therefore, a portion of white light or pseudo white light having the highest luminous intensity can pass through the photodetector 230 and enter the projection lens 228. Therefore, the luminous flux of white light can be effectively used.
  • the photodetector 230 arranged on the extended optical path of the laser light detects the laser light. Therefore, in particular, when an abnormality such as damage or dropout of the wavelength conversion member 240 occurs, it is possible to detect a change in the intensity of the laser light, and appropriately monitor the leakage of the laser light when the wavelength conversion member 240 is abnormal. can do.
  • the photodetector 230 generates a current according to the amount of received laser light, and a determination unit 254 that determines an abnormality of the wavelength conversion member 240 based on a detection signal corresponding to the current.
  • a control unit 256 that controls energization of the semiconductor laser element 238 based on the determination result of the determination unit 254 is provided.
  • the driver recognizes an abnormality (for example, a stepwise abnormality) of the wavelength conversion member 240. It becomes easy and it becomes possible to take appropriate measures.
  • an abnormality for example, a stepwise abnormality
  • a plurality of thresholds for determining an abnormal state are set in the determination unit 254 and the abnormal state can be detected stepwise, before the wavelength conversion member 240 is completely removed, It is possible to repair or replace the lamp 210, and it is possible to prevent the occurrence of a situation that poses a danger to an oncoming vehicle.
  • a photodetector 230a is formed in a rectangular shape having a width w in the left-right direction and a height h in the up-down direction.
  • the width w and the height h may be formed so as to be larger and smaller than the beam diameter of the laser beam LB 1 . Since the photodetector 230a has a light-transmitting property, the white light WL is transmitted therethrough, but may be slightly attenuated. By doing so, the attenuation of the white light WL can be minimized. It is advantageous.
  • an opaque portion such as a contact or a wiring member of the light-transmissive photodetector 230a may be arranged on the light receiving surface of the projection lens. Since it is small with respect to the incident surface of, its influence is negligible.
  • FIG. 14 is a vertical cross-sectional view of the vehicle lamp 310 according to the fourth embodiment of the present disclosure.
  • the lamp 310 has substantially the same configuration as the vehicle lamp 210, but differs in the following points.
  • the lens support portion 226 is made of, for example, a translucent resin, whereas the lens support portion 326 is made of black resin, various metals such as iron, nickel, aluminum, and copper, or alloys such as stainless steel. To be done.
  • the lens support portion 326 includes a lens holding portion 327 and a leg portion 329, and the lens holding portion 327 does not hold the entire rear surface of the projection lens 228, but holds it at the peripheral edge portion.
  • the photodetector 330 has substantially the same shape and structure as the photodetector 230, but is not provided on the rear surface of the lens holding portion 227 but is directly fixed to the rear surface of the projection lens 228 with a transparent adhesive or the like. Has been done.
  • the solid line arrow indicates the white light WL when the wavelength conversion member 240 is normal, and the broken line arrow indicates the laser light LB 1 when the wavelength conversion member 240 is abnormal, that is, when the wavelength conversion member 240 is not present.
  • the photodetector 330 when the photodetector 330 is provided directly on the projection lens 228, it is advantageous because no special structure for supporting the photodetector 330 is required.
  • FIG. 15 is a vertical cross-sectional view of the vehicle lamp 410 according to the fifth embodiment of the present disclosure.
  • the lamp 410 has substantially the same configuration as the vehicle lamp 310, but differs in the following points.
  • the photodetector 430 is not provided on the rear surface of the projection lens 228, but is fixed to the front surface of the wavelength conversion member 440 having the same configuration as the wavelength conversion member 240 with a transparent adhesive or the like.
  • the photodetector 430 may be integrally formed by stacking a photodiode on the front surface of the wavelength conversion member 440.
  • the above configuration is also advantageous because it does not require a special structure for supporting the photodetector 430. Moreover, since the photodetector 430 functions as a reinforcing member for the wavelength conversion member 440, the life of the wavelength conversion member 440 is extended.
  • FIG. 16A is a horizontal cross-sectional view of the vehicle lamp 510 according to the sixth embodiment of the present disclosure.
  • the lamp 510 is a so-called variable orientation headlamp, which functions as a spatial light modulator to control the desired light distribution pattern to be changeable by scanning the light source light with an oscillating mirror.
  • the lamp 510 includes a lamp unit U1 arranged inside a lamp chamber 18 defined by the lamp body 12 and the front cover 14.
  • the lamp unit U1 includes a semiconductor laser element 538, a condenser lens 539, a swing mirror 560, a wavelength conversion member 540, a photodetector 530, and a projection lens 228, and is fixed to the lamp body 12 via a support member 522. ..
  • the semiconductor laser element 538 has the same configuration as the semiconductor laser element 238, and is attached to a heat sink 522a formed on the front surface of the support member 522.
  • the condenser lens 539 is a transmissive plano-convex lens having a flat incident surface and a convex exit surface, and is fixed to a support member 522 by appropriate means.
  • the oscillating mirror 560 is a MEMS (Micro/Electro/Mechanical/System) mirror, is housed in a cylindrical or rectangular parallelepiped housing 536, and is mounted on the support member 522 by a fixing means (not shown).
  • MEMS Micro/Electro/Mechanical/System
  • the front surface of the housing 536 is provided with a circular exit port 542.
  • An opening 543 for passing light from the semiconductor laser element 538 is provided on the side surface of the housing 536 on the light source side.
  • the wavelength conversion member 540 is a phosphor made of the same material as the wavelength conversion member 240, but has a lens shape with a flat rear surface and a convex front surface.
  • the wavelength conversion member 540 is fixed to the emission port 542 by the same means as the wavelength conversion member.
  • the photodetector 530 has a structure similar to that of the photodetector 330, and is directly fixed with a transparent adhesive or the like so as to cover the entire rear surface which is the incident surface of the projection lens 228.
  • the projection lens 228 is designated by a lens support portion (not shown), and the lens support portion is fixed to the support member 522.
  • the semiconductor laser device 538, the swing mirror 560, and the photodetector 530 are connected to the control unit 556, respectively.
  • the control unit 556 controls the energization of the semiconductor laser element based on the detection result of the photodetector, and also controls the energization of the scanning mechanism, similarly to the control unit 256 of the third embodiment.
  • the swing mirror 560 includes a base 561, a first rotating body 562, a second rotating body 563, a first torsion bar 564, a second torsion bar 565, a pair of first permanent magnets 566, and a pair of second. It has a permanent magnet 567 and a terminal portion 569.
  • the second rotating body 563 is a plate-shaped reflecting mirror.
  • a reflective surface 568 is formed on the front surface of the second rotating body 563 by silver deposition or sputtering.
  • the first rotating body 562 has a plate shape, and is supported by the first torsion bar 564 so as to be rotatable left and right (around the Y axis) with respect to the base 561.
  • the second rotating body 563 is plate-shaped, and is supported by the pair of second torsion bars 565 so as to be vertically rotatable (around the X axis) with respect to the first rotating body 562. ..
  • a pair of first permanent magnets 566 and a pair of second permanent magnets 567 are provided in the base 561 in the extending directions of the pair of first and second torsion bars (564, 565), respectively.
  • the pair of first and second rotating bodies (562, 563) are connected to a first coil and a second coil (not shown) via a terminal portion 569, and are independently energized and controlled by a control unit 556. To be done.
  • the first rotating body 562 tilts around the Y axis of the first torsion bar 564 based on the turning on/off of electricity to the first coil.
  • the second rotating body 563 tilts the second torsion bar 565 around the X-axis based on the on / off of the energization of the second coil.
  • the reflecting surface 568 tilts vertically and horizontally, so that the light incident on the reflecting surface 568 is scanned vertically and horizontally.
  • the laser light emitted from the semiconductor laser element 538 is condensed by the condenser lens 539, passes through the opening 543, and enters the swing mirror 560.
  • the laser light incident on the oscillating mirror 560 is scanned vertically and horizontally by the reflecting surface 568.
  • the light incident on the wavelength conversion member 540 is wavelength-converted at each incident position and emitted forward as white diffused light WL.
  • the light that has entered the wavelength conversion member 540 at the position of the laser light LB 1 in FIG. 16A is wavelength-converted and enters the projection lens 228 as white diffused light WL. Further, the light that is scanned leftward and enters the wavelength conversion member 540 at the position of LB 2 is also wavelength-converted into white diffused light WL. Then, the white diffused light enters the photodetector 530. Since the photodetector 530 has a light-transmitting property, the white diffused light WL passes through the photodetector 530 and is captured by the projection lens 228. The illumination light IL is emitted forward. In this way, the light beams scanned by the scanning mechanism and incident on the respective positions of the wavelength conversion member 540 are overlapped with each other to form a predetermined light distribution pattern.
  • the laser light LB (LB 1 is emitted from the semiconductor laser element 538 and reflected by the reflection surface 568. , LB 2 ) goes straight through the emission port 542 and enters the photodetector 530 while maintaining high energy. Since the laser beam LB is incident on the photodetector 530 and the projection lens 228 while being scanned between LB 1 and LB 2 , the incident range of the laser beam on the incident surface of the projection lens 228 is wide. However, since the photodetector 530 is provided so as to cover the entire incident surface of the projection lens 228, it is possible to reliably monitor leakage of laser light.
  • the photodetector 530 does not necessarily have to be provided so as to cover the entire incident surface of the projection lens 228, and at least, assuming that the wavelength conversion member 540 does not exist, the range in which the laser light is incident by scanning is defined. It may be provided so as to cover it. However, if it is provided so as to cover the whole, as described above, the leakage of the laser light can be reliably monitored, which is advantageous.
  • the wavelength conversion member 540 also effectively utilizes the light beam in the vehicle lighting fixture 510 that forms a predetermined light distribution pattern by the swing mirror 560 by arranging it between the wavelength conversion member 540 and the projection lens 228. It is possible to monitor laser light leakage when an abnormality occurs in the laser.
  • FIG. 18A is a horizontal sectional view of the vehicle lamp 610 according to the seventh embodiment of the present disclosure.
  • the lamp unit 610 has substantially the same configuration as the lamp unit 510 except that the lamp unit U2 includes a rotary reflector 660 as a spatial light modulator instead of the swing mirror 560.
  • FIG. 18B is an enlarged view of the rotary reflector 660.
  • the rotary reflector 660 is housed in the housing 536 and mounted on the support member 522 by a fixing means (not shown).
  • the rotation reflector 660 is controlled by the control unit 656 and rotates in one direction about the rotation axis R by a drive source (not shown).
  • the rotary reflector 660 includes a reflecting surface 668 configured to reflect the light emitted from the semiconductor laser element 538 while rotating and form a desired light distribution pattern.
  • the reflecting surface 668 is configured by providing three blades 660a having the same shape around a tubular rotating portion 660b.
  • the rotation axis R is oblique to the optical axis M of the semiconductor laser element 538, and is provided on a plane including the optical axis M and the semiconductor laser element 538.
  • the shape of the blade 660a of the rotary reflector 660 is configured such that a secondary light source by reflection of the light source (semiconductor laser element 538) is formed near the rear focal point of the projection lens 228. Further, the blade 660a has a twisted shape so that the angle formed by the optical axis M and the reflecting surface 668 changes as it goes in the circumferential direction about the rotation axis R. The rotating reflector 660, while rotating around the rotation axis R, reflects the light reflected by the reflecting surface 668 so that the direction of the light changes, thereby scanning the laser light from the light source in the left-right direction.
  • the laser light emitted from the semiconductor laser element 538 is focused by the condenser lens 539, passes through the aperture 543, and is incident on the rotary reflector 660.
  • the laser light incident on the rotary reflector 660 is scanned left and right by the reflecting surface 668.
  • the light incident on the wavelength conversion member 540 is wavelength-converted at each incident position and emitted forward as white diffused light WL.
  • the white diffused light enters the photodetector 530, but since the photodetector 530 has a light-transmitting property, the white diffused light passes through the photodetector 530 and is captured by the projection lens 228.
  • the light beams scanned by the scanning mechanism and incident on the respective positions of the wavelength conversion member 540 are overlapped with each other to form a predetermined light distribution pattern. This is similar to the behavior of the lamp 510 shown in FIG. 16A.
  • the laser beam LB behaves in the same manner as in the lamp 510 shown in FIG. Since the photodetector 530 is provided so as to cover the entire incident surface of the projection lens 228, it is possible to reliably monitor leakage of laser light.
  • the wavelength conversion member 540 can effectively utilize the light beam. It is possible to monitor the leakage of laser light when an abnormality occurs.
  • FIG. 19 is a horizontal cross-sectional view of the vehicle lamp 710 according to the eighth embodiment of the present disclosure.
  • the lamp 710 differs from the lamp 610 in that the photodetector 730 is attached to the exit surface 228b of the projection lens 228 instead of the entrance surface 228a of the projection lens 228.
  • the photodetector 730 has substantially the same structure as the photodetector 230, and is attached to the exit surface 228b of the projection lens 228 with a transparent adhesive so as to cover the entire exit surface 228b. As a result, the emission surface of the photodetector 730 becomes the emission surface 770 of the illumination light IL.
  • the above embodiment is an example of the present invention, and the present invention is not limited to these embodiments, and may be applied to various vehicle lamps that use a laser light emitting element and a wavelength conversion member as a light source. it can. It is also possible to combine these based on the knowledge of those skilled in the art, and such a form is also included in the scope of the present invention.

Abstract

La présente invention concerne un appareil d'éclairage pour véhicule comportant : un élément laser à semi-conducteur (32) qui émet une lumière laser ; une couche de conversion en longueur d'onde (34) qui absorbe au moins une partie de la lumière laser et émet une lumière convertie en longueur d'onde ; et une lentille de projection (28) qui capture et émet la lumière convertie en longueur d'onde vers l'avant. La couche de conversion en longueur d'onde (34) est disposée de manière à faire face à la lentille de projection (28). L'élément laser à semi-conducteur (32) est disposé de sorte que, en supposant que la couche de conversion en longueur d'onde (34) n'existe pas, des rayons lumineux de la lumière laser se trouvent à l'extérieur de la zone d'un angle de capture (θ) de la lentille de projection (28).
PCT/JP2020/004836 2019-03-05 2020-02-07 Appareil d'éclairage pour véhicule WO2020179352A1 (fr)

Applications Claiming Priority (4)

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JP2019039158A JP2020145012A (ja) 2019-03-05 2019-03-05 車両用灯具
JP2019-039158 2019-03-05
JP2019-071175 2019-04-03
JP2019071175A JP2020170783A (ja) 2019-04-03 2019-04-03 車両用灯具

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010045014A (ja) * 2008-07-17 2010-02-25 Fujifilm Corp 曲面状成形体及びその製造方法並びに車両灯具用前面カバー及びその製造方法
JP2013168585A (ja) * 2012-02-16 2013-08-29 Sharp Corp 発光装置、半導体レーザ素子、車両用前照灯、および照明装置
US20160033112A1 (en) * 2014-08-01 2016-02-04 Osram Gmbh Lighting device with a phosphor body spaced apart from a light source
JP2017191760A (ja) * 2016-04-15 2017-10-19 シャープ株式会社 照明装置および車両用前照灯
JP2018106825A (ja) * 2016-12-22 2018-07-05 株式会社小糸製作所 車両用灯具

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010045014A (ja) * 2008-07-17 2010-02-25 Fujifilm Corp 曲面状成形体及びその製造方法並びに車両灯具用前面カバー及びその製造方法
JP2013168585A (ja) * 2012-02-16 2013-08-29 Sharp Corp 発光装置、半導体レーザ素子、車両用前照灯、および照明装置
US20160033112A1 (en) * 2014-08-01 2016-02-04 Osram Gmbh Lighting device with a phosphor body spaced apart from a light source
JP2017191760A (ja) * 2016-04-15 2017-10-19 シャープ株式会社 照明装置および車両用前照灯
JP2018106825A (ja) * 2016-12-22 2018-07-05 株式会社小糸製作所 車両用灯具

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