WO2020137309A1 - レジスト組成物 - Google Patents
レジスト組成物 Download PDFInfo
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- WO2020137309A1 WO2020137309A1 PCT/JP2019/046091 JP2019046091W WO2020137309A1 WO 2020137309 A1 WO2020137309 A1 WO 2020137309A1 JP 2019046091 W JP2019046091 W JP 2019046091W WO 2020137309 A1 WO2020137309 A1 WO 2020137309A1
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- FEUIFPJMKRSESS-UHFFFAOYSA-N CS1(C)CCCCC1 Chemical compound CS1(C)CCCCC1 FEUIFPJMKRSESS-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
- C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
- C08G8/18—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with phenols substituted by carboxylic or sulfonic acid groups
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G8/00—Condensation polymers of aldehydes or ketones with phenols only
- C08G8/04—Condensation polymers of aldehydes or ketones with phenols only of aldehydes
- C08G8/08—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ
- C08G8/20—Condensation polymers of aldehydes or ketones with phenols only of aldehydes of formaldehyde, e.g. of formaldehyde formed in situ with polyhydric phenols
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
Definitions
- the present invention relates to a resist composition.
- a positive photoresist composition using a mixture of m-cresol novolac resin and p-cresol novolac resin as the alkali-soluble resin has been proposed (see, for example, Patent Document 1).
- the positive photoresist composition described in Patent Document 1 was developed for the purpose of improving developability such as sensitivity, but in recent years, the degree of integration of semiconductors has increased, and the pattern tends to be thin, Greater sensitivity is required. However, the positive photoresist composition described in Patent Document 1 has a problem that sufficient sensitivity for thinning cannot be obtained. Further, since various heat treatments are performed in the manufacturing process of semiconductors and the like, high heat resistance is also required, but the positive photoresist composition described in Patent Document 1 does not have sufficient heat resistance. There was a problem.
- the problem to be solved by the present invention is to provide a resist composition which has high heat resistance and can be used for lithography using electron beams and extreme ultraviolet rays.
- the metal of the novolak-type phenol resin obtained by making a carboxylic acid containing phenol trinuclear compound which has a specific structure react with an aliphatic aldehyde.
- the present invention has been completed by finding that a resist composition containing a salt structure has high heat resistance and can be used for lithography using electron beams and extreme ultraviolet rays.
- the present invention provides a resist composition containing a metal salt of a novolac type phenol resin (C), which contains an aromatic compound (A) represented by the following formula (1) and an aliphatic aldehyde (B) as essential reaction raw materials. It is about things.
- R 1 and R 2 each independently represent a hydrogen atom, an aliphatic hydrocarbon group having 1 to 9 carbon atoms, an alkoxy group, an aryl group, an aralkyl group or a halogen atom.
- m and n each independently represent an integer of 0 to 4.
- R 1 is a plurality, the plurality of R 1 may be the same or different.
- R 2 are a plurality, the plurality of R 2 may be the same or different.
- R 3 represents a hydrogen atom, an aliphatic hydrocarbon group having 1 to 9 carbon atoms, or a structural moiety having at least one substituent selected from an alkoxy group, a halogen group and a hydroxyl group on the hydrocarbon group.
- the present invention can provide a resist composition which has high heat resistance and can be used for lithography using electron beams and extreme ultraviolet rays.
- FIG. 3 is a 13 C-NMR chart diagram of the precursor compound obtained in Synthesis Example 1. It is a GPC chart figure of the precursor compound obtained by the synthesis example 2.
- FIG. 9 is a 13 C-NMR chart diagram of the precursor compound obtained in Synthesis Example 2. It is a GPC chart figure of the novolak-type phenol resin obtained in manufacture example 1. It is a GPC chart figure of the novolac-type phenol resin obtained in manufacture example 2.
- FIG. 6 is a GPC chart diagram of a novolac resin obtained in Production Example 3. It is a GPC chart figure of the novolak resin obtained in manufacture example 4.
- the resist composition of the present invention contains a metal salt of a novolac-type phenol resin (C) containing an aromatic compound (A) represented by the following formula (1) and an aliphatic aldehyde (B) as essential reaction raw materials. ..
- R 1 and R 2 each independently represent a hydrogen atom, an aliphatic hydrocarbon group having 1 to 9 carbon atoms, an alkoxy group, an aryl group, an aralkyl group or a halogen atom.
- m and n each independently represent an integer of 0 to 4.
- R 1 is a plurality, the plurality of R 1 may be the same or different.
- R 2 are a plurality, the plurality of R 2 may be the same or different.
- R 3 represents a hydrogen atom, an aliphatic hydrocarbon group having 1 to 9 carbon atoms, or a structural moiety having at least one substituent selected from an alkoxy group, a halogen group and a hydroxyl group on the hydrocarbon group.
- the resist composition usually contains a resin that decomposes due to the action of an acid to change its polarity (acid-decomposable resin), and a compound that generates an acid when irradiated with light (a photo-acid generator).
- the photo-acid generator generates an acid upon exposure, and the action of the generated acid changes the polarity of the resin to form a desired pattern.
- the resolution of the formed pattern may be insufficient due to the mechanism of unevenness of acid diffusion.
- a desired pattern is formed by the decomposition of the metal salt structure by the exposure to the desorption of metal ions and the change in polarity of the novolac type phenolic resin (C).
- the resist composition of the present invention which does not have the mechanism of unevenness of acid diffusion, a high resolution can be obtained.
- the resist composition of the present invention can solve this problem.
- the metal salt of the novolac type phenol resin (C) may have a metal salt structure in part or all of the functional groups of the novolac type phenol resin (C).
- the metal salt of the novolac type phenol resin (C) is preferably a carboxylic acid metal salt of the novolac type phenol resin (C).
- the carboxylic acid metal salt of the novolac type phenol resin (C) preferably has a structure represented by the following formula (X).
- R 1, R 2, R 3 , m and n are the same as R 1, R 2, R 3 , m and n in the formula (1). * Is a point of attachment to any of the three aromatic rings of the above formula (1), and two * may be attached to the same aromatic ring or different aromatic rings. Met represents a metal atom. n represents an integer of 1 or more. )
- the novolac type phenolic resin (C) contains a metal salt structure, and the content of the metal salt structure is, for example, in all repeating units of the novolac type phenolic resin (C). It is 1 to 80 mol %, preferably 10 to 65 mol %, and more preferably 20 to 50 mol %.
- the novolac type phenol resin (C) is a resin in which an aromatic compound (A) represented by the following formula (1) and an aliphatic aldehyde (B) are essential reaction raw materials.
- R 1 and R 2 each independently represent a hydrogen atom, an aliphatic hydrocarbon group having 1 to 9 carbon atoms, an alkoxy group, an aryl group, an aralkyl group or a halogen atom.
- m and n each independently represent an integer of 0 to 4.
- R 1 is a plurality, the plurality of R 1 may be the same or different.
- R 2 are a plurality, the plurality of R 2 may be the same or different.
- R 3 represents a hydrogen atom, an aliphatic hydrocarbon group having 1 to 9 carbon atoms, or a structural moiety having at least one substituent selected from an alkoxy group, a halogen group and a hydroxyl group on the hydrocarbon group.
- the aliphatic hydrocarbon group having 1 to 9 carbon atoms represented by R 1 , R 2 and R 3 is a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group or a t-butyl group. And hexyl group, cyclohexyl group, heptyl group, octyl group, nonyl group and the like, and alkyl groups having 1 to 9 carbon atoms and cycloalkyl groups having 3 to 9 carbon atoms.
- examples of the alkoxy group for R 1 and R 2 include a methoxy group, an ethoxy group, a propyloxy group, a butoxy group, a pentyloxy group, a hexyloxy group, and a cyclohexyloxy group.
- examples of the aryl group represented by R 1 and R 2 include a phenyl group, a tolyl group, a xylyl group, a naphthyl group, and an anthryl group.
- examples of the aralkyl group represented by R 1 and R 2 include a benzyl group, a phenylethyl group, a phenylpropyl group, and a naphthylmethyl group.
- examples of the halogen atom represented by R 1 and R 2 include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom.
- a structural moiety having at least one substituent selected from an alkoxy group, a halogen group and a hydroxyl group on the hydrocarbon group is a halogenated alkyl group, a halogenated aryl group, 2 Examples thereof include an alkoxyalkoxy group such as a -methoxyethoxy group and a 2-ethoxyethoxy group, and an alkylalkoxy group substituted with a hydroxy group.
- n and m are each preferably an integer of 2 or 3.
- n and m are each 2, it is preferable that two R 1 and two R 2 are each independently an alkyl group having 1 to 3 carbon atoms. At this time, two R 1 and two R 2 are preferably bonded to the 2,5-position of the phenolic hydroxyl group.
- aromatic compound (A) represented by the formula (1) those having the same structure may be used alone, or a plurality of compounds having different molecular structures may be used.
- the aromatic compound (A) represented by the formula (1) can be prepared, for example, by a condensation reaction of an alkyl-substituted phenol (a1) and an aromatic aldehyde (a2) having a carboxyl group.
- the aromatic compound (A) represented by the formula (1) can be prepared, for example, by a condensation reaction of an alkyl-substituted phenol (a1) and an aromatic ketone (a3) having a carboxyl group.
- the alkyl-substituted phenol (a1) is a phenol having an alkyl group substituted, and examples of the alkyl group include an alkyl group having 1 to 8 carbon atoms, and a methyl group is preferable.
- alkyl-substituted phenol (a1) examples include o-cresol, m-cresol, p-cresol, o-ethylphenol, m-ethylphenol, p-ethylphenol, p-octylphenol, pt-butylphenol, o.
- -Monoalkylphenols such as cyclohexylphenol, m-cyclohexylphenol and p-cyclohexylphenol; dialkyl such as 2,5-xylenol, 3,5-xylenol, 3,4-xylenol, 2,4-xylenol and 2,6-xylenol Alkylphenol; trialkylphenols such as 2,3,5-trimethylphenol, 2,3,6-trimethylphenol and the like can be mentioned.
- dialkylphenol is preferable, and 2,5-xylenol and 2,6-xylenol are more preferable.
- the alkyl-substituted phenol (a1) may be used alone or in combination of two or more.
- the aromatic aldehyde (a2) having a carboxyl group is a compound having a formyl group on the aromatic nucleus such as benzene, naphthalene, phenol, resorcin, naphthol, and dihydroxynaphthalene, and an alkyl group, an alkoxy group, a halogen atom in addition to the formyl group. And the like.
- aromatic aldehyde (a2) having a carboxyl group examples include 4-formylbenzoic acid, 2-formylbenzoic acid, 3-formylbenzoic acid, methyl 4-formylbenzoate, ethyl 4-formylbenzoate, 4- Propyl formyl benzoate, isopropyl 4-formyl benzoate, butyl 4-formyl benzoate, isobutyl 4-formyl benzoate, tertiary butyl 4-formyl benzoate, cyclohexyl 4-formyl benzoate, tertiary octyl benzoyl benzoate Etc. Of these, 4-formylbenzoic acid is preferable.
- the aromatic aldehyde (a2) having a carboxyl group may be used alone or in combination of two or more.
- the aromatic ketone (a3) having a carboxyl group is a compound having at least one carboxyl group or its ester derivative and a carbonyl group in the aromatic ring.
- aromatic ketone (a3) having a carboxyl group examples include, for example, 2-acetylbenzoic acid, 3-acetylbenzoic acid, 4-acetylbenzoic acid, methyl 2-acetylbenzoate and ethyl 2-acetylbenzoate. , Propyl 2-acetylbenzoate, Isopropyl 2-acetylbenzoate, Butyl 2-acetylbenzoate, Isobutyl 2-acetylbenzoate, Tertiarybutyl 2-acetylbenzoate, Cyclohexyl 2-acetylbenzoate, 2-Acetylbenzoic acid Examples include tertiary octyl. Of these, 2-acetylbenzoic acid and 4-acetylbenzoic acid are preferable.
- the aromatic ketone (a3) may be used alone or in combination of two or more.
- aliphatic aldehyde (B) examples include formaldehyde, paraformaldehyde, 1,3,5-trioxane, acetaldehyde, propionaldehyde, tetraoxymethylene, polyoxymethylene, chloral, hexamethylenetetramine, furfural, glyoxal, n-. Butyraldehyde, caproaldehyde, allyl aldehyde, crotonaldehyde, acrolein, etc. are mentioned. As the aliphatic aldehyde compound (B), one type may be used alone, or two or more types may be used in combination.
- Formaldehyde is preferable as the aliphatic aldehyde (B).
- the amount of the aliphatic aldehyde other than formaldehyde used is in the range of 0.05 to 1 mol with respect to 1 mol of formaldehyde. It is preferable.
- the method for producing the novolac type phenolic resin (C) preferably includes the following three steps 1 to 3.
- Process 1 By subjecting the alkyl-substituted phenol (a1) and the aromatic aldehyde (a2) having a carboxyl group to the presence of an acid catalyst and optionally a solvent in the range of 60 to 140° C. for polycondensation, An aromatic compound (A) is obtained.
- Process 2) The aromatic compound (A) obtained in step 1 is isolated from the reaction solution.
- (Process 3) Aromatic compound (A) and aliphatic aldehyde (B) isolated in step 2 are heated in the range of 60 to 140° C. in the presence of an acid catalyst and, if necessary, a solvent to be polycondensed. Thus, a novolac type phenol resin (C) is obtained.
- Examples of the acid catalyst used in the above step 1 and step 3 include acetic acid, oxalic acid, sulfuric acid, hydrochloric acid, phenolsulfonic acid, paratoluenesulfonic acid, zinc acetate, manganese acetate and the like. These acid catalysts may be used alone or in combination of two or more. Among these acid catalysts, sulfuric acid and p-toluenesulfonic acid are preferable in Step 1, and sulfuric acid, oxalic acid and zinc acetate are preferable in Step 3 because of their excellent activity.
- the acid catalyst may be added before the reaction or during the reaction.
- Examples of the solvent used as necessary in Step 1 and Step 3 include monoalcohols such as methanol, ethanol, propanol; ethylene glycol, 1,2-propanediol, 1,3-propanediol, 1,4-butane.
- Polyols such as diol, 1,5-pentanediol, 1,6-hexanediol, 1,7-heptanediol, 1,8-octanediol, 1,9-nonanediol, trimethylene glycol, diethylene glycol, polyethylene glycol and glycerin 2-ethoxyethanol, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, ethylene glycol monopentyl ether, ethylene glycol dimethyl ether, ethylene glycol ethyl methyl ether, ethylene glycol monophenyl ether, etc.
- Glycol ethers such as 1,3-dioxane and 1,4-dioxane; glycol esters such as ethylene glycol acetate; ketones such as acetone, methyl ethyl ketone and methyl isobutyl ketone; aromatic hydrocarbons such as toluene and xylene.
- These solvents may be used alone or in combination of two or more. Among these solvents, 2-ethoxyethanol is preferable from the viewpoint of excellent solubility of the resulting compound.
- the charge ratio [(a1)/(a2)] of the alkyl-substituted phenol (a1) to the aromatic aldehyde (a2) having a carboxyl group in the step 1 is such that the unreacted alkyl-substituted phenol (a1) can be removed and the product can be removed.
- the molar ratio is preferably in the range of 1/0.2 to 1/0.5, and more preferably in the range of 1/0.25 to 1/0.45, because the yield and the purity of the reaction product are excellent.
- the charging ratio [(A)/(B)] of the aromatic compound (A) and the aliphatic aldehyde (B) in step 3 can suppress excessive high molecular weight (gelation) and is suitable as a phenol resin for resist.
- the molar ratio is preferably in the range of 1/0.5 to 1/1.2, and more preferably in the range of 1/0.6 to 1/0.9, since a polymer having a high molecular weight is obtained.
- a precipitate obtained by adding the reaction solution to a poor solvent (S1) in which the reaction product is insoluble or sparingly soluble After filtering off, the reaction product is dissolved and dissolved in a solvent (S2) which is also miscible with the poor solvent (S1), and the resulting precipitate is added to the poor solvent (S1) and the precipitate formed is filtered off.
- Examples of the poor solvent (S1) used in this case include water; monoalcohols such as methanol, ethanol and propanol; aliphatic hydrocarbons such as n-hexane, n-heptane, n-octane and cyclohexane; toluene and xylene. And other aromatic hydrocarbons.
- water and methanol are preferable because they can efficiently remove the acid catalyst at the same time.
- examples of the solvent (S2) include monoalcohols such as methanol, ethanol, propanol; ethylene glycol, 1,2-propanediol, 1,3-propanediol, 1,4-butanediol, 1,5- Pentanediol, 1,6-hexanediol, 1,7-heptanediol, 1,8-octanediol, 1,9-nonanediol, trimethylene glycol, diethylene glycol, polyethylene glycol, polyols such as glycerin; 2-ethoxyethanol, Glycol ethers such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, ethylene glycol monopentyl ether, ethylene glycol dimethyl ether, ethylene glycol ethyl methyl ether, ethylene glycol monopheny
- aromatic hydrocarbons such as toluene and xylene are used as the solvent in the above step 1 and step 3
- the aromatic compound (A) produced by the reaction is dissolved in the solvent when heated at 80° C. or higher. By cooling as it is, crystals of the aromatic compound (A) are precipitated, so that the aromatic compound (A) can be isolated by filtering this. In this case, the poor solvent (S1) and the solvent (S2) may not be used.
- the aromatic compound (A) represented by the above formula (1) can be obtained by the isolation method in the above step 2.
- the purity of the aromatic compound (A) is preferably 90% or more, more preferably 94% or more, and more preferably 98% or more, as calculated from the gel permeation chromatography (GPC) chart. Is particularly preferable.
- the purity of the aromatic compound (A) can be determined from the area ratio of the GPC chart and is measured under the measurement conditions described later.
- the weight average molecular weight (Mw) of the novolac type phenol resin (C) is preferably in the range of 2,000 to 35,000, more preferably in the range of 2,000 to 25,000.
- the weight average molecular weight (Mw) of the novolak type phenol resin (C) is measured by gel permeation chromatography (hereinafter abbreviated as “GPC”) under the following measurement conditions.
- Metal atom forming metal salt examples include calcium, zinc, copper, iron, aluminum, zirconium, hafnium, titanium, indium and tin. Among these, calcium, zinc, copper, iron, zirconium, hafnium and tin are preferable.
- the said metal atom may be used individually by 1 type, and may use 2 or more types together.
- the metal salt of the novolac type phenolic resin (C) is added with a metal salt such as hydrochloride, nitrate or sulfate of a metal atom and/or a metal oxide while heating a composition containing the novolac type phenolic resin (C). It can be formed by Of these, nitrates and/or metal oxides are preferred.
- the amount of the metal salt and/or metal oxide added is, for example, 1 to 100 parts by mass, preferably 10 to 50 parts by mass, relative to 100 parts by mass of the novolac type phenol resin (C).
- the novolac type phenol resin (C) is an alkali-soluble resin, but it may contain an alkali-soluble resin (D) other than the novolac type phenol resin (C).
- the alkali-soluble resin (D) may be any resin that is soluble in an alkaline aqueous solution, and cresol novolac resin is preferable.
- the cresol novolac resin is a novolac type phenol resin obtained by condensing a phenolic compound and an aldehyde compound as reaction raw materials, and is preferably selected from the group consisting of o-cresol, m-cresol and p-cresol. It is a resin using the above-mentioned phenolic compound as an essential reaction raw material.
- phenol-based compound that is the reaction raw material of the cresol novolac resin phenol or a phenol derivative other than cresol may be used together.
- phenol compounds other than cresol include phenol; 2,3-xylenol, 2,4-xylenol, 2,5-xylenol, 2,6-xylenol, 3,4-xylenol, 3,5-xylenol, and the like.
- Xylenol ethylphenol such as o-ethylphenol, m-ethylphenol, p-ethylphenol; butylphenol such as isopropylphenol, butylphenol, pt-butylphenol; p-pentylphenol, p-octylphenol, p-nonylphenol, p- Alkylphenols such as cumylphenol; halogenated phenols such as fluorophenol, chlorophenol, bromophenol, iodophenol; mono-substituted phenols such as p-phenylphenol, aminophenol, nitrophenol, dinitrophenol, trinitrophenol; 1-naphthol Condensed polycyclic phenols such as 2-naphthol; resorcin, alkylresorcin, pyrogallol, catechol, alkylcatechol, hydroquinone, alkylhydroquinone, phloro
- the amount of the phenolic compound other than cresol used is 0.05 to 1. It is preferably in the range of 0 mol.
- aldehyde compound as a raw material of the cresol novolac resin examples include formaldehyde, paraformaldehyde, trioxane, acetaldehyde, propionaldehyde, polyoxymethylene, chloral, hexamethylenetetramine, furfural, glyoxal, n-butyraldehyde, caproaldehyde, Examples include allyl aldehyde, benzaldehyde, crotonaldehyde, acrolein, tetraoxymethylene, phenylacetaldehyde, o-tolualdehyde, salicylaldehyde and the like. Of these, formaldehyde is preferred.
- the aldehyde compounds may be used alone or in combination of two or more.
- an aldehyde compound other than formaldehyde may be used.
- the amount of the aldehyde compound other than formaldehyde used is 0.05 to 1.0 mol per 1.0 mol of the formaldehyde. A range is preferred.
- the condensation reaction of the phenolic compound and the aldehyde compound is preferably carried out in the presence of an acid catalyst.
- the acid catalyst include oxalic acid, sulfuric acid, hydrochloric acid, phenolsulfonic acid, paratoluenesulfonic acid, zinc acetate, manganese acetate and the like. Among these, oxalic acid is preferable because it has excellent catalytic activity.
- the acid catalyst may be used alone or in combination of two or more. The acid catalyst may be charged before the reaction or added during the reaction.
- the preparation ratio (molar ratio) of the phenolic compound and the aldehyde compound when preparing the cresol novolac resin is preferably in the range of 0.3 to 1.6 of aldehyde compound/phenolic compound, and 0.5 to 1. A range of 3 is more preferable.
- the phenolic compound and the aldehyde compound are heated to 60 to 140° C. in the presence of an acid catalyst to promote the polycondensation reaction, Then, a method of performing dehydration and demonomer under reduced pressure conditions can be mentioned.
- the resist composition of the present invention may or may not contain the photosensitizer (E).
- the photosensitizer (E) a compound having a quinonediazide group can be used.
- the compound having a quinonediazide group include 2,3,4-trihydroxybenzophenone, 2,4,4'-trihydroxybenzophenone, 2,4,6-trihydroxybenzophenone and 2,3,6-trihydroxy.
- Benzophenone 2,3,4-trihydroxy-2'-methylbenzophenone, 2,3,4,4'-tetrahydroxybenzophenone, 2,2',4,4'-tetrahydroxybenzophenone, 2,3',4 ,4',6-pentahydroxybenzophenone, 2,2',3,4,4'-pentahydroxybenzophenone, 2,2',3,4,5-pentahydroxybenzophenone, 2,3',4,4' ,5',6-hexahydroxybenzophenone, 2,3,3',4,4',5'-hexahydroxybenzophenone and other polyhydroxybenzophenone compounds; bis(2,4-dihydroxyphenyl)methane, bis(2 ,3,4-Trihydroxyphenyl)methane, 2-(4-hydroxyphenyl)-2-(4'-hydroxyphenyl)propane, 2-(2,4-dihydroxyphenyl)-2-(2',4' -Dihydroxyphenyl)propane, 2-(2,
- the content of the photosensitizer (E) in the resist composition of the present invention is 100 because the good sensitivity is obtained and a desired pattern is obtained, and the total content of the novolac type phenol resin (C) and the alkali-soluble resin (D) is 100.
- the range of 3 to 50 parts by mass is preferable, and the range of 5 to 30 parts by mass is more preferable, with respect to parts by mass.
- the resist composition of the present invention preferably contains a solvent (F).
- the solvent (F) include ethylene glycol alkyl ethers such as ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether; diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dipropyl ether, Diethylene glycol dialkyl ethers such as diethylene glycol dibutyl ether; Ethylene glycol alkyl ether acetates such as methyl cellosolve acetate and ethyl cellosolve acetate; Propylene glycol alkyl ether acetates such as propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate Ketones such as acetone, methyl ethyl ketone, cycl
- the content of the solvent (F) in the resist composition of the present invention is such that the solid content in the resist composition of the present invention can be obtained because a uniform coating film can be obtained by applying a fluidity of the composition by a coating method such as a spin coating method. It is preferable that the concentration is 15 to 65% by mass.
- the resist composition of the present invention may contain a metal salt of a novolac type phenolic resin (C), and optionally an alkali soluble resin (D), a photosensitizer (E) and a solvent (F).
- Metal salts and optionally alkali-soluble resin (D), photosensitizer (E), solvent (F) and components other than components (C) to (F) for example, surface activity of fillers, pigments, leveling agents, etc. Agent, an adhesion improver, and a dissolution accelerator), and may contain inevitable impurities as long as the effects of the present invention are not impaired.
- the resist composition of the present invention for example, 80% by mass or more, 90% by mass or more, 95% by mass or more, 98% by mass or more or 100% by mass of the solid content excluding the solvent (F) is a novolac type phenol resin. It may comprise a metal salt of (C), and optionally an alkali-soluble resin (D), a photosensitizer (E) and components other than components (C) to (F).
- the resist composition of the present invention was added with a novolac type phenolic resin (C), a metal salt, another alkali-soluble resin (D) optionally blended, a photosensitizer (E) and a solvent (F), and if necessary. It can be prepared by mixing various additives with stirring by a usual method to form a uniform liquid.
- the resist composition of the present invention When a solid material such as a filler and a pigment is added to the resist composition of the present invention, it is preferable to disperse and mix it using a dispersing device such as a dissolver, a homogenizer, or a three roll mill. Further, in order to remove coarse particles and impurities, the composition can be filtered using a mesh filter, a membrane filter or the like.
- a dispersing device such as a dissolver, a homogenizer, or a three roll mill.
- the composition can be filtered using a mesh filter, a membrane filter or the like.
- the resist composition of the present invention can be used as a negative photoresist composition or a positive photoresist.
- the method for producing a pattern using the resist composition of the present invention comprises a step of forming a resist film using the resist composition of the present invention, a step of exposing the resist film, and a step of developing the exposed resist film. Developing with a liquid to form a pattern.
- Formation of the resist film, exposure of the resist film, and development of the exposed resist film can be carried out by known methods.
- the light source for exposing the resist composition of the present invention include infrared light, visible light, ultraviolet light, far ultraviolet light, X-ray, electron beam and the like.
- ultraviolet light is preferable, and g-line (wavelength 436 nm), i-line (wavelength 365 nm) and EUV laser (wavelength 13.5 nm) of a high pressure mercury lamp are preferable.
- alkaline developer used for the development after exposure examples include inorganic alkaline substances such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and ammonia water; 1 such as ethylamine and n-propylamine.
- Secondary amines such as diethylamine and di-n-butylamine; tertiary amines such as triethylamine and methyldiethylamine; alcohol amines such as dimethylethanolamine and triethanolamine; tetramethylammonium hydroxide, tetraethylammonium hydroxy
- Aqueous alkaline solutions such as quaternary ammonium salts such as deuterium; cyclic amines such as pyrrole and pyrelidine can be used. If necessary, alcohol, a surfactant and the like can be appropriately added to these alkaline developers for use.
- the alkali concentration of the alkali developer is usually preferably in the range of 2 to 5% by mass, and a 2.38% by mass tetramethylammonium hydroxide aqueous solution is generally used.
- the pattern forming method of the present invention is preferably used in the manufacturing process of electronic devices.
- the electronic device include household electrical equipment, office automation equipment, media-related equipment, optical equipment, communication equipment, and the like.
- the crude product was redissolved in acetone and further reprecipitated with water, and then the precipitate was filtered off and vacuum dried to obtain 182 g of an orange powder novolac type phenol resin (C-1).
- the obtained novolak type phenol resin (C-1) had a number average molecular weight (Mn) of 3946, a weight average molecular weight (Mw) of 8504, and a polydispersity (Mw/Mn) of 2.16.
- Mn number average molecular weight
- Mw weight average molecular weight
- Mw/Mn polydispersity
- Production Example 2 Synthesis of carboxylic acid-containing novolac-type phenol resin Instead of the precursor compound (A-1), 9.4 g (0.025 mol) of the precursor compound (A-1) and the precursor compound (A′-2) In the same manner as in Production Example 1 except that 8.7 g (0.025 mol) was used, 16.8 g of a novolac-type phenol resin (C-2) as a pale red powder was obtained.
- the obtained novolak type phenol resin (C-2) had a number average molecular weight (Mn) of 3331, a weight average molecular weight (Mw) of 6738, and a polydispersity (Mw/Mn) of 2.02.
- a GPC chart of the novolac type phenol resin (C-2) is shown in FIG.
- the number average molecular weight (Mn) of the novolak resin (C′-3) was 1016
- the weight average molecular weight (Mw) was 2782
- the polydispersity (Mw/Mn) was 2.74.
- a GPC chart of the novolac resin (C′-3) is shown in FIG.
- the GPC of the novolak resin (C′-4) had a number average molecular weight (Mn) of 1450, a weight average molecular weight (Mw) of 10316, and a polydispersity (Mw/Mn) of 7.116.
- Mn number average molecular weight
- Mw weight average molecular weight
- Mw/Mn polydispersity
- Example 1 [Preparation of resin solution]
- a PGMEA solution of the type phenolic resin (C-1) was prepared, and this solution was subjected to microfiltration with a 0.1 ⁇ m polytetrafluoroethylene disk filter to prepare a resin solution.
- the novolac-type phenol resin (C-1) of Production Example 1 was prepared by adding a metal nitrate hydrate to form an immobile gel or a viscous liquid, and further adding an aqueous hydrochloric acid solution to form a low-viscosity liquid. It was confirmed that the metal salt structure was formed by the addition of metal nitrate hydrate.
- Immobilized gelation or viscous liquid formation by addition of metal nitrate hydrate, and low viscosity liquid formation by addition of hydrochloric acid aqueous solution are due to formation of a crosslinked structure due to coordination bond between metal and novolak, and This behavior indicates that the decomposition of the crosslinked structure due to dissociation is reversible, and thus indicates that a metal salt of a carboxylic acid is formed.
- the prepared resin solution was separately evaluated as follows. The results are shown in Table 1.
- the obtained resin solution was applied onto a 5-inch silicon wafer by a spin coater so as to have a thickness of about 1 ⁇ m, and dried on a hot plate at 110° C. for 60 seconds to form a resin film on the silicon wafer.
- the obtained wafer was immersed in a developing solution (2.38% tetramethylammonium hydroxide aqueous solution) for 60 seconds, and then dried on a hot plate at 110° C. for 60 seconds.
- the film thickness before and after the immersion in the developing solution was measured, and the value obtained by dividing the difference by 60 was taken as the alkali developability (ADR1 ( ⁇ /s)).
- Tg glass transition temperature
- Example 2 and Comparative Example 1-2 A resin solution was prepared and evaluated in the same manner as in Example 1 except that the resin shown in Table 1 was used instead of the novolac type phenol resin (C-1). The results are shown in Table 1.
- the novolac resin (C′-3) and the novolac resin (C′-4) resin solutions no sol-formation was evaluated when there was no change in viscosity in gelation evaluation.
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Abstract
Description
本発明のレジスト組成物は、下記式(1)で表される芳香族化合物(A)と脂肪族アルデヒド(B)とを必須の反応原料とするノボラック型フェノール樹脂(C)の金属塩を含む。
m及びnは、それぞれ独立に、0~4の整数を表す。
R1が複数ある場合、複数のR1は互いに同じでも異なってもよい。
R2が複数ある場合、複数のR2は互いに同じでも異なってもよい。
R3は、水素原子、炭素原子数1~9の脂肪族炭化水素基、又は炭化水素基上にアルコキシ基、ハロゲン基及び水酸基から選択される置換基を1以上有する構造部位を表す。)
ノボラック型フェノール樹脂(C)の金属塩は、好ましくはノボラック型フェノール樹脂(C)のカルボン酸金属塩である。前記ノボラック型フェノール樹脂(C)のカルボン酸金属塩は、好ましくは下記式(X)で表される構造である。
R1、R2、R3、m及びnは、前記式(1)のR1、R2、R3、m及びnと同じである。
*は、前記式(1)の3つの芳香環のいずれかとの結合点であり、2つの*は同一の芳香環に結合してもよいし、それぞれ異なる芳香環に結合してもよい。
Metは、金属原子を表す。
nは1以上の整数を表す。)
[ノボラック型フェノール樹脂]
ノボラック型フェノール樹脂(C)は、下記式(1)で表される芳香族化合物(A)と、脂肪族アルデヒド(B)とを必須の反応原料とする樹脂である。
m及びnは、それぞれ独立に、0~4の整数を表す。
R1が複数ある場合、複数のR1は互いに同じでも異なってもよい。
R2が複数ある場合、複数のR2は互いに同じでも異なってもよい。
R3は、水素原子、炭素原子数1~9の脂肪族炭化水素基、又は炭化水素基上にアルコキシ基、ハロゲン基及び水酸基から選択される置換基を1以上有する構造部位を表す。)
n及びmがそれぞれ2である場合、2つR1及び2つR2が、それぞれ独立に、炭素原子数1~3のアルキル基であると好ましい。この時、2つのR1及び2つのR2は、それぞれフェノール性水酸基の2,5-位に結合していることが好ましい。
前記式(1)で表される芳香族化合物(A)は、例えば、アルキル置換フェノール(a1)とカルボキシル基を有する芳香族ケトン(a3)との縮合反応により調製することができる。
芳香族ケトン(a3)は、1種類単独で用いてもよいし、2種以上を併用してもよい。
脂肪族アルデヒド(B)として、ホルムアルデヒドとホルムアルデヒド以外の脂肪族アルデヒドを使用する場合、前記ホルムアルデヒド以外の脂肪族アルデヒドの使用量は、ホルムアルデヒド1モルに対して、0.05~1モルの範囲とすることが好ましい。
(工程1)
アルキル置換フェノール(a1)とカルボキシル基を有する芳香族アルデヒド(a2)とを酸触媒存在下で、必要に応じて溶媒を用いて、60~140℃の範囲で加熱し、重縮合することにより、芳香族化合物(A)を得る。
(工程2)
工程1で得られた芳香族化合物(A)を反応溶液中から単離する。
(工程3)
工程2で単離した芳香族化合物(A)と脂肪族アルデヒド(B)とを酸触媒存在下で、必要に応じて溶媒を用いて、60~140℃の範囲で加熱し、重縮合することにより、ノボラック型フェノール樹脂(C)を得る。
測定装置:東ソー株式会社製「HLC-8220 GPC」
カラム:昭和電工株式会社製「Shodex KF802」(8.0mmФ×300mm)
+昭和電工株式会社製「Shodex KF802」(8.0mmФ×300mm)
+昭和電工株式会社製「Shodex KF803」(8.0mmФ×300mm)
+昭和電工株式会社製「Shodex KF804」(8.0mmФ×300mm)
カラム温度:40℃
検出器:RI(示差屈折計)
データ処理:東ソー株式会社製「GPC-8020モデルIIバージョン4.30」
展開溶媒:テトラヒドロフラン
流速:1.0mL/分
試料:樹脂固形分換算で0.5質量%のテトラヒドロフラン溶液をマイクロフィルターでろ過したもの(100μl)
標準試料:下記単分散ポリスチレン
東ソー株式会社製「A-500」
東ソー株式会社製「A-2500」
東ソー株式会社製「A-5000」
東ソー株式会社製「F-1」
東ソー株式会社製「F-2」
東ソー株式会社製「F-4」
東ソー株式会社製「F-10」
東ソー株式会社製「F-20」
ノボラック型フェノール樹脂(C)と金属塩を形成する金属原子としては、カルシウム、亜鉛、銅、鉄、アルミニウム、ジルコニウム、ハフニウム、チタニウム、インジウム、スズ等が挙げられる。これらの中でも、カルシウム、亜鉛、銅、鉄、ジルコニウム、ハフニウム及びスズが好ましい。前記金属原子は、1種単独で用いてもよく、2種以上を併用してもよい。
本発明のレジスト組成物では、ノボラック型フェノール樹脂(C)がアルカリ可溶性樹脂であるが、ノボラック型フェノール樹脂(C)以外のアルカリ可溶性樹脂(D)を含んでもよい。
本発明のレジスト組成物は、ネガ型フォトレジスト組成物としてもポジ型フォトレジストとしても使用することができる。本発明のレジスト組成物を用いたパターンの製造方法は、本発明のレジスト組成物を用いてレジスト膜を形成する工程と、前記レジスト膜を露光する工程と、前記露光されたレジスト膜を、現像液を用いて現像してパターンを形成する工程とを含む。
冷却管を設置した2000mlの4口フラスコに2,5-キシレノール293.2g(2.4mol)、4-ホルミル安息香酸150g(1mol)を仕込み、酢酸500mlに溶解させた。氷浴中で冷却しながら硫酸5mlを添加した後、マントルヒーターで100℃まで加熱し、2時間攪拌しながら反応させた。反応終了後、得られた溶液に水を加えて粗生成物を再沈殿させた。粗生成物をアセトンに再溶解し、さらに水で再沈殿させた後、沈殿物を濾別して真空乾燥を行い、淡桃色結晶の前駆体化合物(A-1)283gを得た。
冷却管を設置した2000mlの4口フラスコに2,5-キシレノール293.2g(2.4mol)、2-ヒドロキシベンズアルデヒド122g(1mol)を仕込み、2-エトキシエタノール500mlに溶解させた。氷浴中で冷却しながら硫酸10mlを添加した後、マントルヒーターで100℃まで加熱し、2時間攪拌しながら反応させた。反応終了後、得られた溶液に水を加えて粗生成物を再沈殿させた。粗生成物をアセトンに再溶解し、さらに水で再沈殿させた後、沈殿物を濾別して真空乾燥を行い、白色結晶の前駆体化合物(A’-2)283gを得た。
冷却管を設置した1000mlの4口フラスコに前駆体化合物(A-1)188g、92%パラホルムアルデヒド16gを仕込んだ後、酢酸500mlに溶解させた。氷浴中で冷却しながら硫酸10mlを添加した後、オイルバスで80℃まで加熱し、4時間攪拌しながら反応させた。反応終了後、得られた溶液に水を加えて粗生成物を再沈殿させた。粗生成物をアセトンに再溶解し、さらに水で再沈殿させた後、沈殿物を濾別して、真空乾燥を行い橙色粉末のノボラック型フェノール樹脂(C-1)182gを得た。得られたノボラック型フェノール樹脂(C-1)の数平均分子量(Mn)は3946、重量平均分子量(Mw)は8504、多分散度(Mw/Mn)は2.16であった。ノボラック型フェノール樹脂(C-1)のGPCチャートを図5に示す。
前駆体化合物(A-1)の代わりに、前駆体化合物(A-1)9.4g(0.025mol)及び前駆体化合物(A’-2)8.7g(0.025mol)を使用したほかは製造例1と同様にして、淡赤色粉末のノボラック型フェノール樹脂(C-2)16.8gを得た。得られたノボラック型フェノール樹脂(C-2)の数平均分子量(Mn)は3331、重量平均分子量(Mw)は6738、多分散度(Mw/Mn)は2.02であった。ノボラック型フェノール樹脂(C-2)のGPCチャートを図6に示す。
攪拌機、温度計を備えた2Lの4つ口フラスコに、2-ヒドロキシ安息香酸552g(4mol)、1,4-ビス(メトキシメチル)ベンゼン498g(3mol)、p-トルエンスルホン酸2.5g、トルエン500gを仕込み、120℃まで昇温し、脱メタノール反応を行った。減圧下で昇温、蒸留し、230℃、6時間減圧留去を行い、淡黄色固形のノボラック樹脂(C’-3)882gを得た。ノボラック樹脂(C’-3)の数平均分子量(Mn)は1016、重量平均分子量(Mw)は2782、多分散度(Mw/Mn)は2.74であった。ノボラック樹脂(C’-3)のGPCチャートを図7に示す。
攪拌機、温度計を備えた2Lの4つ口フラスコに、m-クレゾール648g(6mol)、p-クレゾール432g(4mol)、シュウ酸2.5g(0.2mol)、42%ホルムアルデヒド492gを仕込み、100℃まで昇温、反応させた。常圧で200℃まで脱水、蒸留し、230℃、6時間減圧蒸留を行い、淡黄色固形のノボラック樹脂(C’-4)736gを得た。
ノボラック樹脂(C’-4)のGPCは数平均分子量(Mn)は1450、重量平均分子量(Mw)は10316、多分散度(Mw/Mn)は7.116であった。ノボラック樹脂(C’-4)のGPCチャートを図8に示す。
[樹脂溶液の調製]
製造例1で調製したノボラック型フェノール樹脂(C-1)とプロピレングリコールモノメチルエーテルアセテート(PGMEA)を、ノボラック型フェノール樹脂(C-1):PGMEA=20:80の質量比で混合して、ノボラック型フェノール樹脂(C-1)のPGMEA溶液とし、この溶液を、0.1μmのポリテトラフルオロエチレン製ディスクフィルタで精密濾過を行い、樹脂溶液を調製した。
30mlの耐熱チューブに得られた樹脂溶液5gと金属硝酸塩水和物であるCa(NO3)2・4H2O、Zn(NO3)2・6H2O、Cu(NO3)2・3H2O及びFe(NO3)3・9H2Oをそれぞれ0.2g加え、振盪処理しながら100℃まで加熱した。加熱後の樹脂溶液と金属硝酸塩水和物の混合物の状態を下記基準で評価した。ゲル化評価の結果を表1に示す。
○:不動ゲル化
△:粘調液体化
×:粘度変化なし
○:低粘度液体化
△:粘調液体化
×:状態変化なし
[アルカリ現像性評価]
得られた樹脂溶液を5インチシリコンウェハー上に約1μmの厚さになるようにスピンコーターで塗布し、110℃のホットプレート上で60秒乾燥させ、シリコンウェハー上に樹脂膜を形成した。得られたウェハーを現像液(2.38%水酸化テトラメチルアンモニウム水溶液)に60秒間浸漬後、110℃のホットプレート上で60秒乾燥させた。現像液浸漬前後の膜厚を測定し、その差分を60で除した値をアルカリ現像性(ADR1(Å/s))とした。
得られた樹脂溶液を5インチシリコンウェハー上に約1μmの厚さになるようにスピンコーターで塗布し、110℃のホットプレート上で60秒乾燥させ、シリコンウェハー上に樹脂膜を形成した。この樹脂膜をかき取り、ガラス転移点温度(以下、「Tg」と略記する。)を測定し、下記基準で評価した。
○:Tgが150℃以上
×:Tgが150℃以下
尚、Tgの測定は、示差熱走査熱量計(株式会社ティー・エイ・インスツルメント製「示差熱走査熱量計(DSC)Q100」)を用いて、窒素雰囲気下、温度範囲-100~200℃、昇温速度10℃/分の条件で行った。
ノボラック型フェノール樹脂(C-1)の代わりに、表1に示す樹脂を用いた他は実施例1と同様にして樹脂溶液を調製し、評価した。結果を表1に示す。尚、ノボラック樹脂(C’-3)及びノボラック樹脂(C’-4)の樹脂溶液については、ゲル化評価で粘度変化がなかった場合は、ゾル化の評価は行わなかった。
Claims (9)
- 下記式(1)で表される芳香族化合物(A)と脂肪族アルデヒド(B)とを必須の反応原料とするノボラック型フェノール樹脂(C)の金属塩を含むレジスト組成物。
m及びnは、それぞれ独立に、0~4の整数を表す。
R1が複数ある場合、複数のR1は互いに同じでも異なってもよい。
R2が複数ある場合、複数のR2は互いに同じでも異なってもよい。
R3は、水素原子、炭素原子数1~9の脂肪族炭化水素基、又は炭化水素基上にアルコキシ基、ハロゲン基及び水酸基から選択される置換基を1以上有する構造部位を表す。) - 前記金属塩が、カルボン酸金属塩である請求項1に記載のレジスト組成物。
- 前記金属塩の金属原子が、カルシウム原子、亜鉛原子、銅原子及び鉄原子から選択される1以上である請求項1又は2に記載のレジスト組成物。
- 前記芳香族化合物(A)が、フェノール化合物と、カルボキシル基もしくはカルボキシエステル基を有する芳香族アルデヒド、及び/又は、カルボキシル基もしくはカルボキシエステル基を有する芳香族ケトンと、の重縮合物である、請求項1~3のいずれかに記載のレジスト組成物。
- 前記カルボキシル基を有する芳香族アルデヒドが、ホルミル安息香酸である、請求項4に記載のレジスト組成物。
- 前記脂肪族アルデヒド(B)が、ホルムアルデヒド及び/又はパラホルムアルデヒドである、請求項1~5のいずれかに記載のレジスト組成物。
- 請求項1~6のいずれかに記載のレジスト組成物を用いてレジスト膜を形成する工程と、
前記レジスト膜を露光する工程と、
前記露光されたレジスト膜を、現像液を用いて現像してパターンを形成する工程と、を含むパターン形成方法。 - 前記露光が、電子線又は極端紫外線による露光である請求項7に記載のパターン形成方法。
- 請求項7又は8に記載のパターン形成方法を含む、電子デバイスの製造方法。
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WO2010073583A1 (ja) * | 2008-12-24 | 2010-07-01 | 住友ベークライト株式会社 | 接着フィルム、多層回路基板、半導体用部品および半導体装置 |
JP2016004209A (ja) * | 2014-06-18 | 2016-01-12 | 信越化学工業株式会社 | ポジ型感光性樹脂組成物、光硬化性ドライフィルム並びにその製造方法、積層体、パターン形成方法、及び基板 |
WO2016056355A1 (ja) * | 2014-10-10 | 2016-04-14 | Dic株式会社 | ナフトール型カリックスアレーン化合物及びその製造方法、感光性組成物、レジスト材料、並びに塗膜 |
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JP2016004209A (ja) * | 2014-06-18 | 2016-01-12 | 信越化学工業株式会社 | ポジ型感光性樹脂組成物、光硬化性ドライフィルム並びにその製造方法、積層体、パターン形成方法、及び基板 |
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