WO2020019388A1 - 显示模组及电子装置 - Google Patents

显示模组及电子装置 Download PDF

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Publication number
WO2020019388A1
WO2020019388A1 PCT/CN2018/101652 CN2018101652W WO2020019388A1 WO 2020019388 A1 WO2020019388 A1 WO 2020019388A1 CN 2018101652 W CN2018101652 W CN 2018101652W WO 2020019388 A1 WO2020019388 A1 WO 2020019388A1
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Prior art keywords
layer
display module
auxiliary electrode
light emitting
connector
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PCT/CN2018/101652
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English (en)
French (fr)
Inventor
李雪云
唐岳军
蔡静
黄俊杰
周辉
Original Assignee
武汉华星光电技术有限公司
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Application filed by 武汉华星光电技术有限公司 filed Critical 武汉华星光电技术有限公司
Priority to US16/303,147 priority Critical patent/US11165038B2/en
Publication of WO2020019388A1 publication Critical patent/WO2020019388A1/zh

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/82Cathodes
    • H10K50/824Cathodes combined with auxiliary electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/805Electrodes
    • H10K59/8052Cathodes
    • H10K59/80522Cathodes combined with auxiliary electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/871Self-supporting sealing arrangements
    • H10K59/8721Metallic sealing arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/871Self-supporting sealing arrangements
    • H10K59/8723Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/842Containers
    • H10K50/8426Peripheral sealing arrangements, e.g. adhesives, sealants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/871Self-supporting sealing arrangements
    • H10K59/8722Peripheral sealing arrangements, e.g. adhesives, sealants

Definitions

  • the invention relates to the field of display, in particular to a display module and an electronic device.
  • OLED Organic Light-Emitting Diode
  • LCD Liquid crystal displays
  • OLED has the advantages of more power saving, thinner, and wider viewing angle, which is incomparable with LCD.
  • people are increasingly demanding the fineness of display, that is, the resolution, but producing high-quality, high-resolution OLED displays still faces many challenges.
  • an OLED display includes an anode, a light-emitting layer located on the anode, and a cathode located on the light-emitting layer.
  • the cathode is different from the anode, and the cathode needs to apply a common voltage to all pixels, that is, the cathode One pixel is electrically connected to the common electrode.
  • the existing OLED display also It includes an auxiliary electrode layer on the cathode, which is mainly used to prevent the cathode from generating a voltage drop; that is, whether it is a bottom-emitting or top-emitting display, the auxiliary electrode layer is mainly used to make the cathode voltage uniform throughout the display; Uniform, the more uniform the brightness / color display of the OLED display.
  • the process of the auxiliary electrode layer since the process of the auxiliary electrode layer is after the light emitting layer, the process of the auxiliary electrode layer has an impact on the light emitting layer.
  • the environment such as the temperature at which the auxiliary electrode layer is manufactured will reduce the life of the light emitting device to a certain extent and damage or age the light emitting layer. , Thereby reducing display luminous efficiency and life.
  • the invention provides a display module and an electronic device to solve the technical problem that the light emitting layer of the existing OLED display panel is damaged.
  • the present invention provides a display module, which includes:
  • a pixel definition layer and a light emitting device layer on the array substrate includes an anode layer, a light emitting layer located on the anode layer, that is, a cathode layer located on the light emitting layer, and the cathode layer covers The pixel definition layer and the light emitting layer;
  • An encapsulation layer located on the pixel definition layer, the encapsulation layer being opposite to the array substrate, the encapsulation layer including an auxiliary electrode layer,
  • the auxiliary electrode layer includes openings, each of the openings corresponds to a pixel unit on the light emitting device layer;
  • a first electrical connection between the packaging layer and the pixel definition layer, and the first electrical connection is located on the pixel definition layer;
  • the first electrical connector is used to support the encapsulation layer and is electrically connected to the auxiliary electrode layer and the cathode layer.
  • the first electrical connection object is composed of a first connection object, and the first connection object is a conductive material.
  • the first electrical connector is composed of a first connector and a second connector, and the first connector is located on a surface of the second connector;
  • the first connection object is a conductive material
  • the second connection object is an insulating material
  • the first electrical connector is located on the pixel definition layer and is in contact with the pixel definition layer.
  • the first electrical connector is located on the cathode layer and is in contact with the cathode layer.
  • the auxiliary electrode layer is located between the packaging layer and the first support pillar; or the auxiliary electrode layer is located in the packaging layer.
  • the invention also provides a display module, which includes:
  • a pixel definition layer and a light emitting device layer on the array substrate includes an anode layer, a light emitting layer located on the anode layer, that is, a cathode layer located on the light emitting layer, and the cathode layer covers The pixel definition layer and the light emitting layer;
  • An encapsulation layer on the pixel definition layer the encapsulation layer being opposite to the array substrate, the encapsulation layer including an auxiliary electrode layer;
  • a first electrical connection between the packaging layer and the pixel definition layer, and the first electrical connection is located on the pixel definition layer;
  • the first electrical connector is used to support the encapsulation layer and is electrically connected to the auxiliary electrode layer and the cathode layer.
  • the first electrical connection object is composed of a first connection object, and the first connection object is a conductive material.
  • the first electrical connector is composed of a first connector and a second connector, and the first connector is located on a surface of the second connector;
  • the first connection object is a conductive material
  • the second connection object is an insulating material
  • the first electrical connector is located on the pixel definition layer and is in contact with the pixel definition layer.
  • the first electrical connector is located on the cathode layer and is in contact with the cathode layer.
  • the auxiliary electrode layer is located between the packaging layer and the first support pillar;
  • the auxiliary electrode layer is located in the encapsulation layer.
  • the invention also provides an electronic device, wherein the electronic device includes the display module described above.
  • the electronic device further includes a second electrical connection between the auxiliary electrode layer and the array substrate;
  • the second electrical connection object is disposed in a non-light emitting area of an outer frame region of the electronic device, and the second electrical connection object is electrically connected with the auxiliary electrode layer.
  • the electronic device further includes a pad located on the array substrate and a metal trace between the pad and the second electrical connection, and the pad passes The metal trace is electrically connected to the second electrical connector.
  • an auxiliary electrode layer is provided on the encapsulation layer, and the cathode layer is electrically connected through the first electrical connector, thereby avoiding damage to the light emitting layer, making the voltage of the cathode layer uniform and stable, and improving A display effect of the display module.
  • FIG. 1 is a structural diagram of a film layer of a display module according to an embodiment of the present invention.
  • FIG. 2 is a structural diagram of a film layer of a display module according to a second embodiment of the present invention.
  • FIG. 3 is a structural diagram of a film layer of a display module according to a third embodiment of the present invention.
  • FIG. 4 is a structural diagram of a film layer of a display module according to a fourth embodiment of the present invention.
  • FIG. 5 is a structural diagram of a film layer of an electronic device according to a fifth embodiment of the present invention.
  • FIG. 6 is a film structure diagram of an electronic device according to a sixth embodiment of the present invention.
  • FIG. 1 is a film structure diagram of a display module according to a first embodiment of the present invention.
  • the display module includes an array substrate, a light emitting device layer on the array substrate, and an encapsulation layer 113 on the light emitting device layer.
  • the array substrate includes a substrate 101 and a thin film transistor layer on the substrate 101.
  • the raw material of the substrate 101 may be one of a glass substrate, a quartz substrate, and a resin substrate.
  • the thin film transistor layer includes an ESL (etch stop layer type), BCE (back channel etch type) or Top-gate (top gate thin film transistor type) structure, and there is no specific limitation; for example, the top gate thin film transistor type includes: a buffer layer 102 , An active layer 103, a gate insulating layer 104, a gate layer 105, an inter-insulating layer 106, a source-drain layer 107, and a flat layer 108.
  • the light emitting device layer includes an anode layer 109, a light emitting layer 110 located on the anode layer 109, that is, a cathode layer 111 located on the light emitting layer 110;
  • the anode layer 109 is formed on the flat layer 108.
  • the anode layer 109 includes at least two anodes arranged in an array.
  • the anode layer 109 is mainly used to provide holes for absorbing electrons.
  • the light emitting device is a top emission OLED device, and the light emitting device is a white light OLED device that emits white light. Therefore, the anode layer 109 is a non-transparent light blocking layer.
  • the light-emitting layer 110 is formed on the anode layer 109.
  • the light-emitting layer 110 is divided into a plurality of light-emitting units by the pixel definition layer 112, and each of the light-emitting units corresponds to an anode.
  • the anode layer 109 The generated holes absorb the cathode layer 111 to generate electrons, and generate a light source in the light emitting layer 110.
  • the cathode layer 111 is formed on the light emitting device layer, and the cathode layer 111 covers the light emitting layer 110 and the pixel definition layer 112 on the array substrate.
  • the cathode layer 111 As a transparent material, the light generated by the light emitting layer 110 is projected outward through the cathode layer 111.
  • the packaging layer 113 is disposed opposite to the array substrate.
  • the packaging layer 113 is used to protect a film layer structure between the packaging layer 113 and the substrate 101.
  • the packaging layer 113 further includes an auxiliary electrode layer. 114.
  • the auxiliary electrode layer 114 is located between the encapsulation layer 113 and the cathode layer 111, or is located in the encapsulation layer 113.
  • the display module further includes a first electrical connection 115 located between the packaging layer 113 and the pixel definition layer 112, and the first electrical connection 115 is located on the pixel definition layer 112;
  • the first electrical connector 115 is used to support the encapsulation layer 113 and is electrically connected to the auxiliary electrode layer 114 and the cathode layer 111.
  • the auxiliary electrode layer 114 is located on the surface of the encapsulation layer 113. That is, the auxiliary electrode layer 114 is integrated with the lower surface of the encapsulation layer 113 and directly bonded to the array substrate to complete the display mode. Set of fitting processes.
  • the auxiliary electrode layer 114 is directly integrated with the lower surface of the package, and the process of forming the auxiliary electrode layer 114 is performed in the process of forming the packaging layer 113, thereby avoiding the formation of the auxiliary electrode layer 114.
  • the effect of the high temperature process on the light emitting layer improves the display effect.
  • the first electrical connector 115 is composed of a first connector, and the first connector is a conductive material; that is, the auxiliary electrode layer 114 is connected to the cathode through the first electrical connector 115
  • the layer 111 is electrically connected to supply a stable voltage to the cathode layer 111;
  • the first electrical connector 115 may include an organic conductive polymer material doped with a conjugate bond, a conductive carbon material such as graphene, and other transparent conductive or opaque electrical materials;
  • the auxiliary electrode layer 114 is provided in a whole layer, that is, light emitted from the light emitting area of the display module may be blocked by the auxiliary layer; therefore, the auxiliary electrode layer 114 in this embodiment is selected to be transparent. A metal layer to avoid a decrease in the luminous efficiency of the display module;
  • the material of the auxiliary electrode layer 114 is ITO.
  • the auxiliary electrode layer 114 includes a first opening 116, that is, each of the openings 116 corresponds to a pixel unit on the light emitting device layer; and Compared with FIG. 1, the auxiliary electrode layer 114 in this embodiment is provided with a plurality of first openings 116, so that light emitted from the light emitting layer 110 is not blocked by the auxiliary electrode layer 114; therefore, the auxiliary electrode layer in this embodiment
  • the material of 114 is not specifically limited, such as molybdenum, aluminum, and the like.
  • FIG. 3 is a structural diagram of a film layer of a display module according to a third embodiment of the present invention.
  • the first electrical connector 115 in this embodiment is composed of a first connector 1151 and a second connector 1152.
  • the first connector 1151 is located on the surface of the second connector 1152; wherein the first connector 1151 is a conductive material and the second connector 1152 is an insulating material;
  • the first electrical connector 115 is located on the cathode layer 111 and is in contact with the cathode layer 111; that is, a conductive material is provided on the surface of the second connector 1152 in this embodiment, and The auxiliary electrode layer 114 and the cathode layer 111 are electrically connected through the conductive material; preferably, the second connection member 1152 may be made of a polymer material having a certain elasticity, and the first connection member 1151 The material is not specifically limited.
  • FIG. 4 is a structural diagram of a film layer of a display module according to a fourth embodiment of the present invention.
  • the first electrical connector 115 in this embodiment is located on the pixel definition layer 112 and is in contact with the pixel definition layer 112.
  • the process of this embodiment is relatively simple, that is, the second connection object 1152 and the pixel definition layer 112 may be made of a photomask, for example, the second connection object 1152 and the pixel
  • the raw material of the layer 112 is defined as a photoresist material
  • a multi-step mask is used to form the pattern in FIG. 4;
  • the cathode layer 111 and the first connector 1151 can also be prepared from the same metal layer in a photomask process, which greatly simplifies the process and improves the process efficiency.
  • the auxiliary electrode layer 114 is disposed in the encapsulation layer 113, is electrically connected to the first electrical connector 115 through an opening, and is electrically connected to the cathode layer 111. A stable voltage is supplied to the cathode layer 111.
  • the auxiliary electrode layer 114 is fabricated in or on the inner surface of the encapsulation layer 113, it will not cause damage / reduction to the light emitting device of the OLED display. Secondly, the auxiliary electrode layer 114 passes through the display.
  • the first electrical connectors 115 which are widely and uniformly distributed in the interior, are electrically connected to the light emitting layer 110, thereby having the function of stabilizing the cathode voltage uniformly throughout the display; and the auxiliary electrode layer 114 has a larger area on the inner surface of the encapsulation layer 113 or more Large thickness / or made of a low resistance metal material, so the auxiliary electrode layer 114 can have a lower resistance value, and can better and more uniformly transmit the cathode signal.
  • the present invention also provides an electronic device, which includes any one of the display modules of the first to fourth embodiments;
  • the electronic device further includes a second electrical connection 217 between the auxiliary electrode layer 214 and the array substrate; further, the second electrical connection 217 is located on the substrate 201 And the auxiliary electrode layer 214; wherein the second electrical connection 217 is disposed in a non-light emitting area of an outer frame region of the electronic device, and the second electrical connection 217 is electrically connected to the auxiliary electrode layer 214 connection;
  • the material of the second electrical connector 217 may be a substance such as silver paste, solder, or a metal solidified in a molten state.
  • the electronic device further includes a pad 218 on the array substrate, and a metal trace (not shown) between the pad 218 and the second electrical connection 217.
  • the pad 218 is electrically connected to the second electrical connector 217 through the metal trace.
  • the electronic device in this embodiment transmits an external stable voltage to the display module through a pad 218 and a metal trace between the pad 218 and the second electrical connector 217 And the second electrical connector 217 is transmitted to the auxiliary electrode layer 214 and finally reaches the cathode layer, which ensures that the cathode voltage is uniform and stable everywhere in the display, and improves the display effect.
  • a plurality of second openings 219 are further provided in the non-light emitting area of the outer frame, so that the encapsulant 220 of the electronic device passes through the second openings 219 and the packaging layer. 213 is directly connected to enhance the sealing performance of the encapsulant 220.
  • the electronic device includes, but is not limited to, a mobile phone, a tablet computer, a computer monitor, a game console, a television, a display screen, a wearable device, and other household appliances or household appliances with a display function.
  • the invention provides a display module and an electronic device.
  • the display module includes: an array substrate; a pixel definition layer and a light emitting device layer on the array substrate; the light emitting device layer includes a cathode layer, and the cathode A layer covering the pixel definition layer and the light emitting layer; a packaging layer disposed opposite to the array substrate, the packaging layer including an auxiliary electrode layer; a first electrical connection between the packaging layer and the pixel definition layer
  • the first electrical connector is located on the pixel definition layer; wherein the first electrical connector is used to support the encapsulation layer and is electrically connected to the auxiliary electrode layer and the cathode layer.
  • an auxiliary electrode layer is provided on the encapsulation layer, and the cathode layer is electrically connected through the first electrical connector, thereby avoiding damage to the light emitting layer, making the voltage of the cathode layer uniform and stable, and improving A display effect of the display module.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种显示模组及电子装置,显示模组包括阵列基板及与阵列基板相对设置的封装层(113),封装层(113)包括辅助电极层(114);位于封装层(113)与阵列基板之间的第一电连接物(115);其中,第一电连接物(115)用于支撑封装层(113),并与辅助电极层(114)以及阴极层(111)电连接。

Description

显示模组及电子装置 技术领域
本发明涉及显示领域,特别涉及一种显示模组及电子装置。
背景技术
在平板显示技术中,有机发光二极管(Organic Light-Emitting Diode,OLED)显示器具有轻薄、主动发光、响应速度快、可视角大、色域宽、亮度高和功耗低等众多优点,逐渐成为继液晶显示器后的第三代显示技术。相对于LCD(Liquid crystal displays,液晶显示器),OLED具有更省电,更薄,且视角宽的优势,这是LCD无法比拟的。目前,人们对显示的细腻程度即分辨率要求越来越高,但生产高质量、高分辨率的OLED显示屏仍然面临着许多挑战。
现有技术中,OLED显示器包括阳极、位于阳极上的发光层、及位于发光层上的阴极;其中,阴极与阳极不同,所述阴极需要对所有像素施加常用电压,即所述阴极为与每一像素电连通的公共电极。
在现有较大型显示器中,由于所述阴极在所述OELD显示器中整层设置,即增加了的导线电阻,从而产生电压降,导致发光不均匀和功耗增加;因此,现有OLED显示器还包括位于阴极上辅助电极层,主要用于避免所述阴极产生电压降;即不论底发光型还是顶发光型显示器,所述辅助电极层主要用于使显示器各处阴极电压均匀;即阴极电压越均一,OLED显示器各处亮度/颜色等显示越均匀。
其中,由于辅助电极层的工艺是在发光层之后,因此辅助电极层的工艺对发光层产生影响,如辅助电极层制造的温度等环境会一定程度上降低发光器件的寿命,破坏或老化发光层,从而降低显示器发光效率和寿命。
因此,目前亟需一种显示模组以解决上述问题。
技术问题
本发明提供一种显示模组及电子装置,以解决现有OLED显示面板发光层被损坏的技术问题。
技术解决方案
本发明提供一种显示模组,其包括:
阵列基板;
位于所述阵列基板上的像素定义层及发光器件层,所述发光器件层包括阳极层、位于所述阳极层上的发光层、即位于所述发光层上的阴极层,所述阴极层覆盖所述像素定义层及所述发光层;
位于所述像素定义层上的封装层,所述封装层与所述阵列基板相对设置,所述封装层包括辅助电极层,
所述辅助电极层包括开口,每一所述开口对应一所述发光器件层上的像素单元;以及
位于所述封装层与所述像素定义层之间的第一电连接物,所述第一电连接物位于所述像素定义层上;
其中,所述第一电连接物用于支撑所述封装层,并与所述辅助电极层以及所述阴极层电连接。
在本发明的显示模组中,所述第一电连接物由第一连接物构成,所述第一连接物为导电材料。
在本发明的显示模组中,所述第一电连接物由第一连接物和第二连接物构成,所述第一连接物位于所述第二连接物的表面;
其中,所述第一连接物为导电材料,所述第二连接物为绝缘材料。
在本发明的显示模组中,所述第一电连接物位于所述像素定义层上,与所述像素定义层接触。
在本发明的显示模组中,所述第一电连接物位于所述阴极层上,与所述阴极层接触。
在本发明的显示模组中,所述辅助电极层位于所述封装层与所述第一支撑柱之间;或所述辅助电极层位于所述封装层内。
本发明还提出了一种显示模组,其包括:
阵列基板;
位于所述阵列基板上的像素定义层及发光器件层,所述发光器件层包括阳极层、位于所述阳极层上的发光层、即位于所述发光层上的阴极层,所述阴极层覆盖所述像素定义层及所述发光层;
位于所述像素定义层上的封装层,所述封装层与所述阵列基板相对设置,所述封装层包括辅助电极层;以及
位于所述封装层与所述像素定义层之间的第一电连接物,所述第一电连接物位于所述像素定义层上;
其中,所述第一电连接物用于支撑所述封装层,并与所述辅助电极层以及所述阴极层电连接。
在本发明的显示模组中,所述第一电连接物由第一连接物构成,所述第一连接物为导电材料。
在本发明的显示模组中,所述第一电连接物由第一连接物和第二连接物构成,所述第一连接物位于所述第二连接物的表面;
其中,所述第一连接物为导电材料,所述第二连接物为绝缘材料。
在本发明的显示模组中,所述第一电连接物位于所述像素定义层上,与所述像素定义层接触。
在本发明的显示模组中,所述第一电连接物位于所述阴极层上,与所述阴极层接触。
在本发明的显示模组中,所述辅助电极层位于所述封装层与所述第一支撑柱之间;或
所述辅助电极层位于所述封装层内。
本发明还提出了一种电子装置,其中,所述电子装置包括上述显示模组。
在本发明的电子装置中,所述电子装置还包括位于所述辅助电极层与所述阵列基板之间的第二电连接物;
其中,所述第二电连接物设置于所述电子装置外边框区域的非发光区,所述第二电连接物与所述辅助电极层电连接。
在本发明的电子装置中,所述电子装置还包括位于所述阵列基板上的焊盘、及位于所述焊盘与所述第二电连接物之间的金属走线,所述焊盘通过所述金属走线与所述第二电连接物电连接。
有益效果
本发明通过在所述封装层上设置辅助电极层,并通过所述第一电连接物与所述阴极层电连接,避免了发光层的损坏,使所述阴极层的电压均一稳定,提升了所述显示模组的显示效果。
附图说明
为了更清楚地说明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单介绍,显而易见地,下面描述中的附图仅仅是发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明实施例一一种显示模组的膜层结构图;
图2为本发明实施例二一种显示模组的膜层结构图;
图3为本发明实施例三一种显示模组的膜层结构图;
图4为本发明实施例四一种显示模组的膜层结构图;
图5为本发明实施例五一种电子装置的膜层结构图;
图6为本发明实施例六一种电子装置的膜层结构图。
本发明的最佳实施方式
以下各实施例的说明是参考附加的图示,用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语,例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。在图中,结构相似的单元是用以相同标号表示。
图1为本发明实施例一显示模组的膜层结构图,所述显示模组包括阵列基板、位于所述阵列基板上的发光器件层、及位于所述发光器件层上的封装层113;
所述阵列基板包括基板101及位于所述基板101上的薄膜晶体管层;其中,所述基板101的原材料可以为玻璃基板、石英基板、树脂基板等中的一种。
所述薄膜晶体管层包括ESL(蚀刻阻挡层型)、BCE(背沟道蚀刻型)或Top-gate(顶栅薄膜晶体管型)结构,具体没有限制;例如顶栅薄膜晶体管型包括:缓冲层102、有源层103、栅绝缘层104、栅极层105、间绝缘层106、源漏极层107以及平坦层108。
所述发光器件层包括阳极层109、位于所述阳极层109上的发光层110、即位于所述发光层110上的阴极层111;
所述阳极层109形成于所述平坦层108上,所述阳极层109包括至少两个成阵列排布的阳极,所述阳极层109主要用于提供吸收电子的空穴;本实施例中,发光器件(OLED)为顶发射型OLED器件,所述发光器件为发射白光的白光OLED器件,因此,所述阳极层109为非透明的挡光层。
所述发光层110形成于所述阳极层109上,所述发光层110被所述像素定义层112分隔成多个发光单元,每一所述发光单元对应一所述阳极;所述阳极层109产生的空穴吸收所述阴极层111产生电子,并在所述发光层110中产生光源。
所述阴极层111形成于所述发光器件层上,所述阴极层111覆盖所述发光层110及位于所述阵列基板上的所述像素定义层112;本实施例中,所述阴极层111为透明材料,使发光层110产生的光线经过所述阴极层111向外投射。
所述封装层113与所述阵列基板相对设置,所述封装层113用于保护所述封装层113与所述基板101之间的膜层结构;其中,所述封装层113还包括辅助电极层114,所述辅助电极层114位于所述封装层113与所述阴极层111之间、或位于所述封装层113内。
另外,所述显示模组还包括位于所述封装层113与所述像素定义层112之间的第一电连接物115,所述第一电连接物115位于所述像素定义层112上;其中,所述第一电连接物115用于支撑所述封装层113,并与所述辅助电极层114以及所述阴极层111电连接。
如图1所示,所述辅助电极层114位于所述封装层113的表面,即将所述辅助电极层114集成与所述封装层113下表面,并直接与阵列基板进行贴合,完成显示模组的贴合工艺。
可以理解的,本实施例直接将所述辅助电极层114集成与所述封装下表面,将所述辅助电极层114的工艺在形成封装层113的工艺进行,避免了形成所述辅助电极层114的高温工艺对发光层的影响,提高了显示效果。
本实施例中,所述第一电连接物115由第一连接物构成,所述第一连接物为导电材料;即所述辅助电极层114通过所述第一电连接物115与所述阴极层111电连接,供给所述阴极层111稳定的电压;
优选的,所述第一电连接物115可以为包含掺杂具有共轭键的有机导电高分子材料、具有导电性的碳材如石墨烯、以及其他透明导或不透明电材料;
可以理解的,由于所述辅助电极层114为整层设置,即显示模组发光区域发出的光线可能被所述辅助层所遮挡;因此,本实施例中的所述辅助电极层114选择透明的金属层,避免所述显示模组发光效率的降低;
优选的,所述辅助电极层114的材料为ITO。
图2为本发明实施例二显示模组的膜层结构图,所述辅助电极层114包括第一开口116,即每一所述一开口116对应一所述发光器件层上的像素单元;与图1相比,本实施例中的辅助电极层114设置有多个第一开口116,使得发光层110发出的光线未被所述辅助电极层114遮挡;因此,本实施例中的辅助电极层114的材料没有具体的限定,例如钼、铝等。
图3为本发明实施例三显示模组的膜层结构图,本实施例中的所述第一电连接物115由第一连接物1151和第二连接物1152构成,所述第一连接物1151位于所述第二连接物1152的表面;其中,所述第一连接物1151为导电材料,所述第二连接物1152为绝缘材料;
可以理解的,与实施例二相比所述第一电连接物115位于所述阴极层111上,与所述阴极层111接触;即本实施例通过第二连接物1152表面设置导电材料,并通过所述导电材料将所述辅助电极层114与所述阴极层111电连接;优选的,所述第二连接物1152可以由具有一定弹性的聚合物材料制成,所述第一连接物1151的材料没有具体的限定。
图4为本发明实施例四显示模组的膜层结构图,本实施例中的所述第一电连接物115位于所述像素定义层112上,与所述像素定义层112接触;
与实施例三相比,本实施例的工艺较为简单,即所述第二连接物1152与所述像素定义层112可以由一道光罩制成,例如所述第二连接物1152与所述像素定义层112的原材料为光阻材料时,采用多段式掩膜版形成图4中的图案;
另外,所述阴极层111与所述第一连接物1151也可以在一道光罩工艺中由同一金属层制备,大大的简化了工艺,提高了制程效率。
在上述实施例一至实施例四中,所述辅助电极层114设置于所述封装层113内,通过开孔与所述第一电连接物115电连接,并与所述阴极层111电连接,供给所述阴极层111稳定的电压。
在本发明的显示模组中,由于所述辅助电极层114制作在所述封装层113内或内表面,因此不会对OLED显示器发光器件产生损害/降低影响;其次,辅助电极层114通过显示器内广泛均匀分布的第一电连接物115导通至发光层110,从而具有使显示器内各处阴极电压均一稳定的功能;并且,辅助电极层114在封装层113内表面具有较大面积或者较大厚度/或者由低电阻值金属材料制作,因此辅助电极层114可以具有更低的电阻值,可以更好、更均匀的传输阴极信号。
本发明还提出了一种电子装置,所述电子装置包括实施例一至实施例四中的任一种显示模组;
如图5所示,所述电子装置还包括位于所述辅助电极层214与所述阵列基板之间的第二电连接物217;进一步的,所述第二电连接物217位于所述基板201与所述辅助电极层214之间;其中,所述第二电连接物217设置于所述电子装置外边框区域的非发光区,所述第二电连接物217与所述辅助电极层214电连接;
优选的,所述第二电连接物217的材料可以为银胶、焊锡或熔融状态固化的金属等物质。
在本实施例中,所述电子装置还包括位于所述阵列基板上的焊盘218、及位于所述焊盘218与所述第二电连接物217之间的金属走线(未画出),所述焊盘218通过所述金属走线与所述第二电连接物217电连接。
可以理解的,本实施例中的所述电子装置通过焊盘218向所述显示模组传输外部稳定电压,并通过所述焊盘218与所述第二电连接物217之间的金属走线及所述第二电连接物217传输至辅助电极层214,最终到达阴极层,保证显示器内各处阴极电压均一稳定,提高显示效果。
如图6所示,在本实施例中,在所述外边框的非发光区域还设置有多个第二开口219,使得所述电子装置的封装胶220通过所述第二开口219与封装层213直接连接,增强封装胶220的密封性。
可以理解的,所述电子装置包括但不限定于手机、平板电脑、计算机显示器、游戏机、电视机、显示屏幕、可穿戴设备及其他具有显示功能的生活电器或家用电器等。
本发明提出了一种显示模组及电子装置,所述显示模组包括:阵列基板;位于所述阵列基板上的像素定义层及发光器件层,所述发光器件层包括阴极层,所述阴极层覆盖所述像素定义层及发光层;与所述阵列基板相对设置的封装层,所述封装层包括辅助电极层;位于所述封装层与所述像素定义层之间的第一电连接物,所述第一电连接物位于所述像素定义层上;其中,所述第一电连接物用于支撑所述封装层,并与所述辅助电极层以及所述阴极层电连接。本发明通过在所述封装层上设置辅助电极层,并通过所述第一电连接物与所述阴极层电连接,避免了发光层的损坏,使所述阴极层的电压均一稳定,提升了所述显示模组的显示效果。
综上所述,虽然本发明已以优选实施例揭露如上,但上述优选实施例并非用以限制本发明,本领域的普通技术人员,在不脱离本发明的精神和范围内,均可作各种更动与润饰,因此本发明的保护范围以权利要求界定的范围为准。

Claims (15)

  1. 一种显示模组,其包括:
    阵列基板;
    位于所述阵列基板上的像素定义层及发光器件层,所述发光器件层包括阳极层、位于所述阳极层上的发光层、即位于所述发光层上的阴极层,所述阴极层覆盖所述像素定义层及所述发光层;
    位于所述像素定义层上的封装层,所述封装层与所述阵列基板相对设置,所述封装层包括辅助电极层,
    所述辅助电极层包括第一开口,每一所述第一开口对应一所述发光器件层上的像素单元;以及
    位于所述封装层与所述像素定义层之间的第一电连接物,所述第一电连接物位于所述像素定义层上;
    其中,所述第一电连接物用于支撑所述封装层,并与所述辅助电极层以及所述阴极层电连接。
  2. 根据权利要求1所述的显示模组,其中,所述第一电连接物由第一连接物构成,所述第一连接物为导电材料。
  3. 根据权利要求1所述的显示模组,其中,所述第一电连接物由第一连接物和第二连接物构成,所述第一连接物位于所述第二连接物的表面;
    其中,所述第一连接物为导电材料,所述第二连接物为绝缘材料。
  4. 根据权利要求3所述的显示模组,其中,所述第一电连接物位于所述像素定义层上,与所述像素定义层接触。
  5. 根据权利要求3所述的显示模组,其中,所述第一电连接物位于所述阴极层上,与所述阴极层接触。
  6. 根据权利要求1所述的显示模组,其中,所述辅助电极层位于所述封装层与所述第一支撑柱之间;或
    所述辅助电极层位于所述封装层内。
  7. 一种显示模组,其包括:
    阵列基板;
    位于所述阵列基板上的像素定义层及发光器件层,所述发光器件层包括阳极层、位于所述阳极层上的发光层、即位于所述发光层上的阴极层,所述阴极层覆盖所述像素定义层及所述发光层;
    位于所述像素定义层上的封装层,所述封装层与所述阵列基板相对设置,所述封装层包括辅助电极层;以及
    位于所述封装层与所述像素定义层之间的第一电连接物,所述第一电连接物位于所述像素定义层上;
    其中,所述第一电连接物用于支撑所述封装层,并与所述辅助电极层以及所述阴极层电连接。
  8. 根据权利要求7所述的显示模组,其中,所述第一电连接物由第一连接物构成,所述第一连接物为导电材料。
  9. 根据权利要求7所述的显示模组,其中,所述第一电连接物由第一连接物和第二连接物构成,所述第一连接物位于所述第二连接物的表面;
    其中,所述第一连接物为导电材料,所述第二连接物为绝缘材料。
  10. 根据权利要求9所述的显示模组,其中,所述第一电连接物位于所述像素定义层上,与所述像素定义层接触。
  11. 根据权利要求9所述的显示模组,其中,所述第一电连接物位于所述阴极层上,与所述阴极层接触。
  12. 根据权利要求7所述的显示模组,其中,所述辅助电极层位于所述封装层与所述第一支撑柱之间;或
    所述辅助电极层位于所述封装层内。
  13. 一种电子装置,其包括权利要求1所述的显示模组。
  14. 根据权利要求13所述的电子装置,其中,所述电子装置还包括位于所述辅助电极层与所述阵列基板之间的第二电连接物;
    其中,所述第二电连接物设置于所述电子装置外边框区域的非发光区,所述第二电连接物与所述辅助电极层电连接。
  15. 根据权利要求13所述的电子装置,其中,所述电子装置还包括位于所述阵列基板上的焊盘、及位于所述焊盘与所述第二电连接物之间的金属走线,所述焊盘通过所述金属走线与所述第二电连接物电连接。
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