WO2021027015A1 - 阵列基板及显示装置 - Google Patents

阵列基板及显示装置 Download PDF

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Publication number
WO2021027015A1
WO2021027015A1 PCT/CN2019/106831 CN2019106831W WO2021027015A1 WO 2021027015 A1 WO2021027015 A1 WO 2021027015A1 CN 2019106831 W CN2019106831 W CN 2019106831W WO 2021027015 A1 WO2021027015 A1 WO 2021027015A1
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Prior art keywords
layer
light
emitting
substrate
array substrate
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PCT/CN2019/106831
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English (en)
French (fr)
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周思思
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武汉华星光电半导体显示技术有限公司
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Priority to US16/630,442 priority Critical patent/US20210408143A1/en
Publication of WO2021027015A1 publication Critical patent/WO2021027015A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/352—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels

Definitions

  • the present invention relates to the field of display technology, in particular to an array substrate and a display device.
  • OLED Organic Light-Emitting Diode
  • the mainstream driving method of OLED display panel is current driving.
  • the working current is transmitted from the lower frame of the display panel through the source and drain (SD: SourceDrain).
  • SD SourceDrain
  • the signal transmission has a voltage drop (IR Drop) phenomenon, that is, relative to the lower frame, the voltage gradually decreases along the direction away from the lower frame, and the input current decreases accordingly, which eventually causes uneven brightness on the display panel, which affects the performance of the product.
  • IR Drop voltage drop
  • a method for solving the uneven brightness of OLED display panels adopts a double-layer SD structure, thereby reducing the resistance of the source and drain and improving the IR Drop phenomenon.
  • the double-layer SD wiring structure since the film thickness of the second SD wiring layer is more than 700nm, the upper organic flat layer cannot flatten it completely, so a step will be formed under the light-emitting layer, causing light emission The light-emitting surface of the layer is uneven, which affects the display effect.
  • the purpose of the present invention is to provide an array substrate and a display device to solve the unevenness of the light-emitting surface of the light-emitting layer caused by the inability to planarize the double-layer SD wiring structure in the prior art, thereby affecting the display effect of the display device.
  • the present invention provides an array substrate, which includes a substrate, a thin film transistor structure layer and a light emitting layer.
  • the thin film transistor structure layer is disposed on the substrate, and the thin film transistor structure layer has a plurality of wires therein.
  • the light-emitting layer is provided on the thin film transistor structure layer, the light-emitting layer has a plurality of light-emitting units, each light-emitting unit has a light-emitting area, and the projection of the wiring on the substrate avoids the light-emitting area Projection on the substrate.
  • the light-emitting units are arranged in an array, the light-emitting areas of two adjacent light-emitting units have a gap, and the projection of the trace on the substrate falls into the projection of the gap on the substrate.
  • the light emitting unit includes at least one of a red light emitting unit, a green light emitting unit, and a blue light emitting unit.
  • the thin film transistor structure layer has a first flat layer and a second flat layer.
  • the wiring is arranged on the first flat layer.
  • the second flat layer is disposed on the first flat layer and covers the wiring.
  • the light-emitting layer is provided with a first electrode, which is arranged on the second flat layer, and both ends of the light-emitting layer respectively extend outside the light-emitting area.
  • One end of the first electrode passes through the second flat layer and is connected to the trace.
  • the array substrate further includes a pixel defining layer, which is provided on the second flat layer; the pixel defining layer is provided with an opening, and the opening corresponds to the light-emitting area and is located in all areas of the light-emitting area.
  • the first electrode is exposed at the opening.
  • the thin film transistor structure layer has a source electrode and a drain electrode, and the wiring is connected to the drain electrode.
  • the thin film transistor structure layer includes: an active layer disposed on the substrate.
  • the first gate insulating layer is arranged on the active layer.
  • the first gate layer is arranged on the first gate insulating layer.
  • the second gate insulating layer is disposed on the first gate insulating layer and covers the first gate layer.
  • the second gate layer is arranged on the second gate insulating layer.
  • the interlayer dielectric layer is arranged on the second gate insulating layer and covers the second gate layer.
  • the source electrode and the drain electrode are arranged on the interlayer dielectric layer, and respectively pass through the interlayer dielectric layer, the second gate insulating layer and the first gate insulating layer to connect to the The active layer.
  • the array substrate further includes an encapsulation layer and a buffer layer.
  • the encapsulation layer covers the light-emitting layer and the thin film transistor structure layer.
  • the buffer layer is provided on the substrate, and the active layer is provided on the buffer layer.
  • the present invention also provides a display device, which includes the above-mentioned array substrate.
  • the advantage of the present invention is: the array substrate provided in the present invention avoids the light-emitting unit of the light-emitting layer by the wiring in the thin film transistor structure layer, thereby preventing the formation of a step under the light-emitting layer, and promoting each The surface of the light-emitting unit is flat, thereby improving the light-emitting efficiency of the light-emitting layer, further improving the screen display effect of the display device, and enhancing user experience.
  • FIG. 1 is a schematic top view of an array substrate in an embodiment of the present invention
  • FIG. 2 is a schematic diagram of the layered structure of the array substrate in the embodiment of the present invention.
  • First gate layer 25A second gate layer 25B;
  • Blue light-emitting unit 31 Red light-emitting unit 32;
  • Green light emitting unit 33 ; encapsulation layer 4.
  • the part When some part is described as being “on” another part, the part may be directly placed on the other part; there may also be an intermediate part on which the part is placed, And the middle part is placed on another part.
  • a component When a component is described as “installed to” or “connected to” another component, both can be understood as directly “installed” or “connected”, or a component is indirectly “mounted to” or “connected to” through an intermediate component To" another part.
  • the array substrate 1000 includes a substrate 1, a thin film transistor structure layer 2, and a light emitting layer 3.
  • the thin film transistor structure layer 2 is provided on the substrate.
  • the light-emitting layer 3 is provided on the thin film transistor layer.
  • the thin film transistor structure layer 2 has several wires 21.
  • the substrate 1 may be an inorganic substrate 1 such as a glass substrate 1 and a quartz substrate 1, which has the function of insulating water and oxygen.
  • the light-emitting layer 3 has several light-emitting units, and the light-emitting units are arrayed on the array substrate 1000.
  • the light emitting unit includes a red light emitting unit 32, a green light emitting unit 33, and a blue light emitting unit 31.
  • the green light-emitting units 33 are arranged in multiple rows corresponding to each other, the red light-emitting units 32 and the blue light-emitting units 31 are arranged in multiple rows at intervals, and each red light-emitting unit 32 is adjacent to a blue light-emitting unit.
  • the center line of 31 has a vertical bisector, and the center of a green light-emitting unit 33 is on the vertical bisector.
  • the red light-emitting unit 32, the green light-emitting unit 33, and the blue light-emitting unit 31 combine to form a display screen, which promotes the display device to achieve color display, and each light-emitting unit is evenly distributed to make the screen of the display device The color display is more uniform.
  • the organic light-emitting diode display device has self-luminous performance, the luminous efficiency of the blue light-emitting unit 31 and the light-emitting efficiency of the red light-emitting unit 32 are much lower than that of the green light-emitting unit 33. If the blue light-emitting unit 31 and the red light-emitting unit 32 have the same pixel size To achieve the same brightness as the green light-emitting unit 33, it is necessary to increase the current, which will reduce the service life of the light-emitting particles in the blue light-emitting unit 31 and the red light-emitting unit 32, thereby reducing the use of the display device life.
  • the area of the green light emitting unit 33 is smaller than the area of the red light emitting unit 32, and the area of the red light emitting unit 32 is smaller than the area of each blue light emitting unit 31.
  • one green light-emitting unit 33 is shared between every two blue light-emitting units 31 and every two red light-emitting units 32. Under the same display fineness, this design will make the area of the blue light-emitting unit 31 and the red light unit larger, and at the same time bring a higher panel aperture ratio, so that the required luminous intensity can be achieved at the same time The required current limit is reduced, thereby prolonging the service life of the display device and increasing its brightness.
  • each light-emitting unit has a light-emitting area, and the projection of the wiring 21 on the substrate 1 avoids the projection of the light-emitting area on the substrate 1.
  • there is a gap between two adjacent light-emitting areas and the projection of the wiring 21 on the substrate 1 falls into the projection of the gap on the substrate 1.
  • the distance from the boundary of the wiring 21 to the boundary of the adjacent light-emitting area is less than um.
  • the wiring 21 avoids each light-emitting area, promotes the light-emitting surface of each light-emitting area in the light-emitting layer 3 to be flat, and improves the light-emitting effect of each light-emitting unit, thereby improving the display effect of the display device. User experience.
  • the thin film transistor structure layer 2 further includes a first flat layer 27A, a second flat layer 27B, a first electrode, a pixel defining layer 29, a source 22A and a drain 22B.
  • the first flat layer 27A is provided between the source 22A, the drain 22B and the wiring 21, and the wiring 21 passes through the first flat layer 27A and is connected to the drain 22B.
  • the first flattening layer 27A is used to flatten the source 22A and the drain 22B, protect the source 22A and the drain 22B, isolate water and oxygen, increase the service life of the device, and prevent short circuits.
  • the second flat layer 27B is provided on the first flat layer 27A and covers the wiring 21, which is used to flatten the wiring 21, protect the wiring 21, isolate water and oxygen, and improve The service life of the device prevents short circuit.
  • the materials of the first flat layer 27A and the second flat layer 27B are organic insulators.
  • the first electrode is provided on a surface of the second flat layer 27B away from the wiring 21, one end of which passes through the second flat layer 27B and is connected to the wiring 21, and its two ends respectively extend to Outside the light-emitting area.
  • the light-emitting layer 3 is disposed on the first electrode and connected to the first electrode, and the first electrode provides electrical energy for the light-emitting layer 3 to promote the light-emitting layer 3 to emit light.
  • the pixel defining layer 29 is provided on a surface of the first electrode and the second flat layer 27B, and has an opening corresponding to the first electrode, and each opening is provided in a corresponding light-emitting area , The first electrode located in the light-emitting area is exposed in the opening, and the light-emitting layer 3 is disposed in the opening.
  • the pixel defining layer 29 is used to define the size and position of each light emitting unit of the light emitting layer 3.
  • the thin film transistor also includes an active layer 23, a first gate insulating layer 24A, a second gate insulating layer 24B, a first gate layer 25A, a second gate layer 25B, and an interlayer Medium layer 26.
  • the active layer 23 is provided on the substrate 1 and may be one of semiconductor materials such as low-temperature polysilicon, amorphous silicon, and oxide.
  • the first gate insulating layer 24A covers the active layer 23, which is used to insulate the active layer 23 from the gate structure layer, prevent short circuits, and protect the active layer 23.
  • the gate structure layer is disposed on a surface of the first gate insulating layer 24A away from the active layer 23.
  • the gate structure layer includes a first gate layer 25A, a second gate layer 25B, a second gate insulating layer 24B, and an interlayer dielectric layer 26.
  • the first gate layer 25A is disposed on the first gate insulating layer 24A and corresponds to the active layer 23.
  • the second gate insulating layer 24B covers the first gate layer 25A and the first gate insulating layer 24A, and is used to separate the first gate layer 25A and the second gate layer 25B. It is insulated to prevent short circuit and protect the first gate layer 25A.
  • the second gate layer 25B is disposed on a surface of the second gate insulating layer 24B away from the first gate layer 25A, and corresponds to the active layer 23.
  • the interlayer dielectric layer 26 covers a surface of the second gate layer 25B and the second gate insulating layer 24B, and the source electrode 22A and the drain electrode 22B are provided on the interlayer dielectric layer 26 On a surface away from the second gate layer 25B.
  • the interlayer dielectric layer 26 is used to insulate the second gate layer 25B from the source electrode 22A and the drain electrode 22B, prevent short-circuit phenomenon, and protect the second gate layer 25B.
  • the source electrode 22A and the drain electrode 22B pass through the interlayer dielectric layer 26, the second gate insulating layer 24B, the first gate insulating layer 24A and the active layer in the gate structure layer.
  • the two ends of 23 are connected.
  • the materials of the first gate layer 25A and the second gate layer 25B are metals with excellent conductivity.
  • the material of 26 is inorganic substances such as silicon oxide, silicon nitride, and silicon oxynitride.
  • the thin film transistor structure layer 2 further includes a buffer layer 20 which is provided between the substrate 1 and the active layer 23 and is used to protect the thin film transistor structure layer 2.
  • the array substrate 1000 further includes an encapsulation layer 4, which covers one surface of the light-emitting layer 3 and the thin film transistor structure layer 2, and is used to encapsulate and protect the light-emitting layer 3 from outside Contaminants corrode the light-emitting layer 3.
  • An embodiment of the present invention also provides a display device, the display device includes the above-mentioned array substrate 1000, and the display device is an OLED (Organic Light-Emitting Diode, organic light-emitting diode) display device.
  • the display device may be any product or component with a display function, such as a mobile phone, a tablet computer, or a notebook computer.
  • the array substrate 1000 provided in the embodiment of the present invention avoids the light-emitting units of the light-emitting layer 3 by the wiring 21 in the thin film transistor structure layer 2 so as to make the surface of each light-emitting unit flat. Therefore, the luminous efficiency of the light-emitting layer 3 is improved, the screen display effect of the display device is further improved, and the user experience is improved.

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  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
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Abstract

一种阵列基板及显示装置，所述阵列基板（1000）包括基板（1）、薄膜晶体管结构层（2）以及发光层（3）。所述薄膜晶体管结构层（2）设于所述基板（1）上，所述薄膜晶体管结构层（2）其中具有若干走线（21）。所述发光层（3）设于所述薄膜晶体管结构层（2）上，所述发光层（3）中具有若干发光单元（31，32，33），所述走线（21）在所述基板（1）上的投影避开所述发光单元（31，32，33）在所述基板（1）上的投影。

Description

阵列基板及显示装置 技术领域
本发明涉及显示技术领域，特别是一种阵列基板及显示装置。
 背景技术
在显示技术领域，液晶显示面板（Liquid Crystal Display，LCD）与有机发光二极管显示面板（Organic Light-Emitting Diode，OLED）等平板显示装置已经逐步取代阴极线管显示器。其中，OLED显示面板以其低功耗、高饱和度、快响应时间及宽视角等独特优势逐渐占据上风，未来在车载、手机、平板、电脑及电视产品上具有广阔的应用空间。
OLED显示面板主流驱动方式为电流驱动，工作电流由显示面板的下边框处通过源漏极（SD：SourceDrain）进行传输，因源漏极自身存在一定电阻，信号传输存在电压下降（IR Drop）现象，即相对于下边框而言，沿远离下边框的方向电压逐渐变小，输入电流相应减小，最终导致显示面板出现亮度不均现象，影响产品的使用性能。
目前，一种解决OLED显示面板发光亮度不均的方法采用双层SD结构，从而减小源漏极的电阻，改善IR Drop现象。但是在双层的SD走线结构中，由于第二层SD走线层的膜厚在700nm以上，上层的有机平坦层也无法使其完全平坦化，因此会在发光层下形成段差，造成发光层发光面不平整，影响显示效果。
 技术问题
本发明的目的是提供一种阵列基板及显示装置，以解决现有技术中无法将双层SD走线结构平坦化所导致的发光层的发光面不平整，进而影响显示装置的显示效果。
 技术解决方案
为实现上述目的，本发明提供一种阵列基板，所述阵列基板包括基板、薄膜晶体管结构层和发光层。所述薄膜晶体管结构层设于所述基板上，所述薄膜晶体管结构层其中具有若干走线。所述发光层设于所述薄膜晶体管结构层上，所述发光层中具有若干发光单元，每一发光单元具有一发光区，所述走线在所述基板上的投影避开所述发光区在所述基板上的投影。
进一步地，所述发光单元成阵列排列，相邻两个发光单元的发光区具有一间隙，所述走线在所述基板上的投影落入所述间隙在所述基板上的投影中。
进一步地，所述发光单元包括红色发光单元、绿色发光单元、蓝色发光单元中的至少一种。
进一步地，所述薄膜晶体管结构层中具有第一平坦层、第二平坦层。所述走线设于所述第一平坦层上。所述第二平坦层设于所述第一平坦层上，且覆盖所述走线。
进一步地，所述发光层设有第一电极，设于所述第二平坦层上，其两端分别延伸至所述发光区之外。所述第一电极的其中一端穿过所述第二平坦层连接至所述走线。
进一步地，所述阵列基板还包括像素限定层，设于所述第二平坦层上；所述像素限定层设有开口，所述开口对应于所述发光区，位于所述发光区中的所述第一电极裸露于所述开口。
进一步地，所述薄膜晶体管结构层中具有源极和漏极，所述走线连接至所述漏极。
进一步地，所述薄膜晶体管结构层包括：有源层，设于所述基板上。第一栅极绝缘层，设于所述有源层上。第一栅极层，设于所述第一栅极绝缘层上。第二栅极绝缘层，设于所述第一栅极绝缘层上且覆盖所述第一栅极层。第二栅极层，设于所述第二栅极绝缘层上。层间介质层，设于所述第二栅极绝缘层上且覆盖所述第二栅极层。所述源极和所述漏极设于所述层间介质层上，且分别穿过所述层间介质层、所述第二栅极绝缘层和所述第一栅极绝缘层连接至所述有源层上。
进一步地，所述阵列基板还包括封装层和缓冲层。所述封装层覆于所述发光层和所述薄膜晶体管结构层上。所述缓冲层设于所述基板上，所述有源层设于所述缓冲层上。
本发明中还提供一种显示装置，所述显示装置包括如上所述的阵列基板。
 有益效果
本发明的优点是：本发明中所提供的一种阵列基板，其通过将薄膜晶体管结构层中的走线避开所述发光层的发光单元，从而防止所述发光层下形成段差，促使每一所述发光单元的表面平整，进而提高所述发光层的发光效率，进一步地提高所述显示装置的画面显示效果，提升用户体验感。
 附图说明
图1为本发明实施例中阵列基板的俯视示意图；
图2为本发明实施例中阵列基板的层状结构示意图。
图中部件表示如下：
阵列基板1000；
基板1；薄膜晶体管结构层2；
走线21；有源层23；
源极22A；漏极22B；
第一栅极绝缘层24A；第二栅极绝缘层24B；
第一栅极层25A；第二栅极层25B；
层间介质层26；第一平坦层27A；
第二平坦层27B；电极层28；
像素限定层29；缓冲层20；
发光层3；
蓝色发光单元31；红色发光单元32；
绿色发光单元33；封装层4。
 本发明的实施方式
以下参考说明书附图介绍本发明的优选实施例，证明本发明可以实施，所述发明实施例可以向本领域中的技术人员完整介绍本发明，使其技术内容更加清楚和便于理解。本发明可以通过许多不同形式的发明实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例。
在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。附图所示的每一部件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。为了使图示更清晰，附图中有些地方适当夸大了部件的厚度。
此外，以下各发明实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定发明实施例。本发明中所提到的方向用语，例如，“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”、“侧面”等，仅是参考附加图式的方向，因此，使用的方向用语是为了更好、更清楚地说明及理解本发明，而不是指示或暗指所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”、“第三”等仅用于描述目的，而不能理解为指示或暗示相对重要性。
当某些部件被描述为“在”另一部件“上”时，所述部件可以直接置于所述另一部件上；也可以存在一中间部件，所述部件置于所述中间部件上，且所述中间部件置于另一部件上。当一个部件被描述为“安装至”或“连接至”另一部件时，二者可以理解为直接“安装”或“连接”，或者一个部件通过一中间部件间接“安装至”、或“连接至”另一个部件。
本发明实施例中提供了一种阵列基板1000，如图1所示，所述阵列基板1000包括基板1、薄膜晶体管结构层2以及发光层3，所述薄膜晶体管结构层2设于所述基板1上，所述发光层3设于所述薄膜晶体管层上。其中，所述薄膜晶体管结构层2中具有若干走线21。所述基板1可以为玻璃基板1、石英基板1等无机基板1，其具有隔绝水氧的作用。
所述发光层3中具有若干发光单元，所述发光单元阵列排布于所述阵列基板1000上。其中，所述发光单元包括红色发光单元32、绿色发光单元33和蓝色发光单元31。所述绿色发光单元33相互对应排列成多列，所述红色发光单元32和所述蓝色发光单元31互相间隔排列成多列，并且每一红色发光单元32与其相邻的一蓝色发光单元31的中心连线具有一垂直平分线，一绿色发光单元33的中心在所述垂直平分线上。所述红色发光单元32、所述绿色发光单元33和所述蓝色发光单元31组合形成显示画面，促使显示装置实现彩色显示，并且每一发光单元之间均匀分布，使所述显示装置的画面颜色显示更加均匀。
由于有机发光二极管显示器件具有自发光性能，其蓝色发光单元31的发光效率和红色发光单元32的发光效率远低于绿色发光单元33，如果蓝色发光单元31和红色发光单元32同样像素大小要达到与绿色发光单元33一样的亮度，需要加大电流，这样会缩减所述蓝色发光单元31中和所述红色发光单元32中的发光粒子的使用寿命，从而缩减所述显示装置的使用寿命。故在本发明实施例中，所述绿色发光单元33的面积小于所述红色发光单元32的面积，所述红色发光单元32的面积小于每所述蓝色发光单元31的面积。并且，每两个蓝色发光单元31和每两个红色发光单元32之间共享一个绿色发光单元33。在同样的显示细腻度下，这样的设计会使蓝色发光单元31和红色光单元的面积更大，同时带来更高的面板开口率，这样一来就可以在达到所需发光强度的同时减低所需的限流，从而延长所述显示装置的使用寿命，并提高其亮度。
在所述阵列基板1000中，每一发光单元中具有一发光区，所述走线21在所述基板1上的投影避开所述发光区在所述基板1上的投影。并且，在两个相邻的发光区之间具有一间隙，所述走线21在所述基板1上的投影落入所述间隙在所述基板1上的投影中。其中，所述走线21的边界到与其相邻的发光区的边界的距离小于um。所述走线21避开了每一发光区，促使所述发光层3中的每一发光区的发光表面平整，提高每一发光单元的发光效果，从而提高所述显示装置的显示效果，提升用户体验感。
如图2所示，在所述薄膜晶体管结构层2中还包括一第一平坦层27A、一第二平坦层27B、一第一电极、一像素限定层29以及源极22A和漏极22B。
所述第一平坦层27A设于所述源极22A漏极22B和所述走线21之间，所述走线21穿过所述第一平坦层27A与所述漏极22B连接。所述第一平坦层27A用于平坦化所述源极22A和漏极22B，并保护所述源极22A和漏极22B，隔绝水氧，提高器件的使用寿命，防止发生短路现象。所述第二平坦层27B设于所述第一平坦层27A上，并且覆盖所述走线21，其用于平坦化所述走线21，并保护所述走线21，隔绝水氧，提高器件的使用寿命，防止发生短路现象。其中，所述第一平坦层27A和所述第二平坦层27B的材料为有机绝缘物。
所述第一电极设于所述第二平坦层27B远离所述走线21的一表面上，其一端穿过所述第二平坦层27B与所述走线21连接，其两端分别延伸至所述发光区之外。所述发光层3设于所述第一电极上并与所述第一电极连接，所述第一电极为所述发光层3提供电能，促使所述发光层3发光。
所述像素限定层29设于所述第一电极和所述第二平坦层27B的一表面上，其对应所述第一电极处具有一开口，每一开口对应设于一所述发光区内，位于所述发光区中的所述第一电极裸露于所述开口，所述发光层3设于所述开口内。所述像素限定层29用于限定所述发光层3的每一发光单元大小以及位置。
所述薄膜晶体管中还包括一有源层23、一第一栅极绝缘层24A、一第二栅极绝缘层24B、一第一栅极层25A、一第二栅极层25B以及一层间介质层26。
所述有源层23设于所述基板1上，其可以为低温多晶硅、非晶硅、氧化物等半导体材料中的一种。所述第一栅极绝缘层24A覆于有源层23上，其用于将所述有源层23与所述栅极结构层绝缘，防止发生短路，并保护所述有源层23。
所述栅极结构层设于所述第一栅极绝缘层24A远离所述有源层23的一表面上。其中，所述栅极结构层包括一第一栅极层25A、一第二栅极层25B、第二栅极绝缘层24B以及一层间介质层26。所述第一栅极层25A设于所述第一栅极绝缘层24A上，并对应于所述有源层23。所述第二栅极绝缘层24B覆于所述第一栅极层25A和第一栅极绝缘层24A上，其用于将所述第一栅极层25A与所述第二栅极层25B绝缘，防止发生短路现象，并保护所述第一栅极层25A。所述第二栅极层25B设于所述第二栅极绝缘层24B远离所述第一栅极层25A的一表面上，并对应于所述有源层23。所述层间介质层26覆于所述第二栅极层25B和所述第二栅极绝缘层24B的一表面上，所述源极22A和漏极22B设于所述层间介质层26远离所述第二栅极层25B的一表面上。所述层间介质层26用于将所述第二栅极层25B与所述源极22A和漏极22B绝缘，防止发生短路现象，并保护所述第二栅极层25B。
其中，所述源极22A和漏极22B穿过所述栅极结构层中的层间介质层26、第二栅极绝缘层24B和所述第一栅极绝缘层24A与所述有源层23的两端连接。所述第一栅极层25A和所述第二栅极层25B的材料为导电性能优异的金属，所述第一栅极绝缘层24A、第二栅极绝缘层24B和所述层间介质层26的材料为氧化硅、氮化硅、氮氧化硅等无机物。
如图2所示，所述薄膜晶体管结构层2中还包括一缓冲层20，设于所述基板1与所述有源层23之间，其用于保护所述薄膜晶体管结构层2。所述阵列基板1000中还包括封装层4，所述封装层4覆于所述发光层3和所述薄膜晶体管结构层2的一表面上，其用于封装保护所述发光层3，防止外界污染物腐蚀所述发光层3。
本发明实施例中还提供了一种显示装置，所述显示装置中包括上述的阵列基板1000，所述显示装置为OLED（Organic Light-Emitting Diode，有机发光二极管）显示装置。所述显示装置可以为手机、平板电脑、笔记本电脑等任何具有显示功能的产品或者部件。
本发明实施例中所提供的一种阵列基板1000，其通过将薄膜晶体管结构层2中的走线21避开所述发光层3的发光单元，从而使每一所述发光单元的表面平整，从而提高所述发光层3的发光效率，进一步地提高所述显示装置的画面显示效果，提升用户体验感。
虽然在本文中参照了特定的实施方式来描述本发明，但是应该理解的是，这些实施例仅仅是本发明的原理和应用的示例。因此应该理解的是，可以对示例性的实施例进行许多修改，并且可以设计出其他的布置，只要不偏离所附权利要求所限定的本发明的精神和范围。应该理解的是，可以通过不同于原始权利要求所描述的方式来结合不同的从属权利要求和本文中所述的特征。还可以理解的是，结合单独实施例所描述的特征可以使用在其他所述实施例中。

Claims (10)

  1. 一种阵列基板，其包括：
    基板；
    薄膜晶体管结构层，设于所述基板上，所述薄膜晶体管结构层其中具有若干走线；
    发光层，设于所述薄膜晶体管结构层上，所述发光层中具有若干发光单元，每一发光单元具有一发光区，所述走线在所述基板上的投影避开所述发光区在所述基板上的投影。
  2. 如权利要求1所述的阵列基板，其中，所述发光单元成阵列排列，相邻两个发光单元的发光区具有一间隙，所述走线在所述基板上的投影落入所述间隙在所述基板上的投影中。
  3. 如权利要求1所述的阵列基板，其中，所述发光单元包括红色发光单元、绿色发光单元、蓝色发光单元中的至少一种。
  4. 如权利要求1所述的阵列基板，其中，所述薄膜晶体管结构层中具有：
    第一平坦层，所述走线设于所述第一平坦层上；以及
    第二平坦层，设于所述第一平坦层上，且覆盖所述走线。
  5. 如权利要求4所述的阵列基板，其中，所述发光层设有
    第一电极，设于所述第二平坦层上，其两端分别延伸至所述发光区之外；
    所述第一电极的其中一端穿过所述第二平坦层连接至所述走线。
  6. 如权利要求5所述的阵列基板，其还包括像素限定层，设于所述第二平坦层上；所述像素限定层设有开口，所述开口对应于所述发光区，位于所述发光区中的所述第一电极裸露于所述开口。
  7. 如权利要求4所述的阵列基板，其中，所述薄膜晶体管结构层中具有源极和漏极，所述走线连接至所述漏极。
  8. 如权利要求7所述的阵列基板，其中，所述薄膜晶体管结构层包括：
    有源层，设于所述基板上；
    第一栅极绝缘层，设于所述有源层上；
    第一栅极层，设于所述第一栅极绝缘层上；
    第二栅极绝缘层，设于所述第一栅极绝缘层上且覆盖所述第一栅极层；
    第二栅极层，设于所述第二栅极绝缘层上；
    层间介质层，设于所述第二栅极绝缘层上且覆盖所述第二栅极层；
    所述源极和所述漏极设于所述层间介质层上，且分别穿过所述层间介质层、所述第二栅极绝缘层和所述第一栅极绝缘层连接至所述有源层上。
  9. 如权利要求8所述的阵列基板，其还包括：
    封装层，覆于所述发光层和所述薄膜晶体管结构层上；
    缓冲层，设于所述基板上，所述有源层设于所述缓冲层上。
  10.    一种显示装置，其包括如权利要求1中所述的阵列基板。
PCT/CN2019/106831 2019-08-14 2019-09-20 阵列基板及显示装置 WO2021027015A1 (zh)

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