WO2019008808A1 - ステルスダイシング用粘着シートおよび半導体装置の製造方法 - Google Patents
ステルスダイシング用粘着シートおよび半導体装置の製造方法 Download PDFInfo
- Publication number
- WO2019008808A1 WO2019008808A1 PCT/JP2018/003592 JP2018003592W WO2019008808A1 WO 2019008808 A1 WO2019008808 A1 WO 2019008808A1 JP 2018003592 W JP2018003592 W JP 2018003592W WO 2019008808 A1 WO2019008808 A1 WO 2019008808A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- pressure
- adhesive sheet
- stealth dicing
- sensitive adhesive
- semiconductor wafer
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
Definitions
- the present invention relates to a pressure-sensitive adhesive sheet for stealth dicing used for stealth dicing (registered trademark) processing, and a method of manufacturing a semiconductor device using the pressure-sensitive adhesive sheet for stealth dicing.
- the semiconductor wafer with an electrode or the modified semiconductor wafer with an electrode to which a dicing sheet is attached on the surface opposite to the electrode formation surface in the process of the above manufacturing method It has been proposed that a film-like adhesive is laminated on the electrode forming surface, and the electrode-mounted chip divided in the expanding step is provided with an adhesive layer on the electrode forming surface.
- an adhesive film called a die attach film (DAF) or a nonconductive adhesive film (NCF) is used.
- Patent Document 1 discloses that a DAF is attached to a wafer, a stealth dicing process is performed, and then, the wafer is separated into chips by expanding and the DAF is divided at the same time.
- the present invention has been made in view of the above-described actual situation, and is for stealth dicing that a semiconductor wafer can be favorably separated into chips by cool expansion even when the obtained chip size is small.
- An object of the present invention is to provide a method of manufacturing an adhesive sheet and a semiconductor device.
- the present invention at least cuts and separates a semiconductor wafer having a reformed layer formed therein into individual chips under an environment of -20 ° C. or more and 10 ° C. or less
- a pressure-sensitive adhesive sheet for stealth dicing which comprises: a substrate; and a pressure-sensitive adhesive layer laminated on one side of the substrate, and the pressure-sensitive adhesive sheet for stealth dicing via the pressure-sensitive adhesive layer. That the shear force at 0 ° C.
- the interface between the pressure-sensitive adhesive layer and the silicon wafer is 190 N / (3 mm ⁇ 20 mm) or more and 400 N / (3 mm ⁇ 20 mm) or less when The adhesive sheet for stealth dicing characterized by the above is provided (invention 1).
- the adhesive sheet for stealth dicing according to the invention (Invention 1), when the shear force at 0 ° C. is in the above range, the adhesive sheet for stealth dicing is laminated on the adhesive sheet for stealth dicing when cool expanding. Misalignment at the interface with the semiconductor wafer is less likely to occur. As a result, the force for pulling the semiconductor wafer in the direction of the peripheral edge, which is generated by the expansion of the adhesive sheet for stealth dicing, tends to be concentrated on the modified layer, resulting in favorable division of the semiconductor wafer in the modified layer. Therefore, even when the obtained chip size is small, the occurrence of problems such as division failure and chip breakage can be suppressed, and a chip that is favorably segmented can be obtained.
- tip of the minimum side length is 0.5 mm or more and 20 mm or less (invention 2).
- the semiconductor wafer preferably has a thickness of 10 ⁇ m or more and 1000 ⁇ m or less (Invention 3).
- the pressure-sensitive adhesive layer is preferably composed of an energy ray-curable adhesive (Invention 4).
- the storage elastic modulus at 0 ° C. of the substrate is preferably 100 MPa or more and 1500 MPa or less (Invention 5).
- a bonding step of bonding the pressure-sensitive adhesive layer and the semiconductor wafer of the pressure-sensitive adhesive sheet for the stealth dicing (inventions 1 to 5), and a modified step of forming a modified layer inside the semiconductor wafer
- the step of expanding the adhesive sheet for stealth dicing in an environment of -20.degree. C. or more and 10.degree. C. or less to cut and separate the semiconductor wafer having the modified layer formed therein into individual chips.
- a method of manufacturing a semiconductor device comprising the step of expanding (invention 6).
- the semiconductor wafer bonded to the adhesive sheet for stealth dicing further includes a laminating step of laminating a bonding film on the surface opposite to the adhesive sheet side for stealth dicing. Is preferable (invention 7).
- a pressure-sensitive adhesive sheet for stealth dicing and a method of manufacturing a semiconductor device capable of satisfactorily singulating a semiconductor wafer into chips by cool expansion even when the obtained chip size is small.
- FIG. 1 It is a top view explaining the measuring method of shear force concerning example 1 of an examination. It is sectional drawing explaining the measuring method of the shear force which concerns on Experiment 1.
- FIG. 1 It is a top view explaining the measuring method of shear force concerning example 1 of an examination. It is sectional drawing explaining the measuring method of the shear force which concerns on Experiment 1.
- the adhesive sheet for stealth dicing is used to cut and separate at least a semiconductor wafer having a modified layer formed therein into individual chips under a low temperature environment.
- the low temperature environment refers to a temperature environment in which DAF and NCF are sufficiently embrittled, and means, for example, an environment of 10 ° C. or less, and in particular, an environment of 6 ° C. or less Is more preferable, and it is more preferable that the environment be 4 ° C. or less.
- the lower limit of the temperature in the low temperature environment is not particularly limited.
- the environment in the low temperature environment, it means that the environment is -20 ° C or more, and particularly in the environment -15 ° C or more It is preferable that the temperature be -10.degree. C. or higher. Under an environment exceeding 10 ° C., the brittleness of DAF and NCF is insufficient, and there is a possibility that good division can not be performed. In addition, there is a concern that the adhesion between the DAF, the NCF, or the pressure-sensitive adhesive sheet may be reduced to an environment lower than their glass transition temperature (Tg) under an environment of less than -20.degree. C. And there is a concern that the adhesive sheet may break during expansion.
- Tg glass transition temperature
- the step of forming the modified layer inside the semiconductor wafer may be performed in a state where the semiconductor wafer is bonded to the adhesive sheet for stealth dicing, or the semiconductor wafer is for stealth dicing. It may be carried out before being bonded to the pressure-sensitive adhesive sheet.
- sheet in the present specification also includes the concept of "tape".
- the adhesive sheet for stealth dicing which concerns on this embodiment is provided with a base material and the adhesive layer laminated
- the substrate and the pressure-sensitive adhesive layer are preferably laminated directly, but are not limited thereto.
- the shear force at 0 ° C. of the interface between the adhesive layer and the silicon wafer is 190 N / (3 mm ⁇ 20 mm) or more, preferably 195 N / (3 mm ⁇ 20 mm) or more, and particularly preferably 200 N / (3 mm ⁇ 20 mm) or more.
- the shear force is 400 N / (3 mm ⁇ 20 mm) or less, preferably 300 N / (3 mm ⁇ 20 mm) or less, and particularly preferably 200 N / (3 mm ⁇ 20 mm) or less.
- the shear force is less than 190 N / (3 mm ⁇ 20 mm)
- a shift at the interface between the adhesive sheet for stealth dicing and the semiconductor wafer is apt to occur during cool expansion, particularly when the chip size is small. It can not be cut well separated.
- the shear force exceeds 400 N / (3 mm ⁇ 20 mm)
- the chip interval can not be sufficiently expanded by cool expansion.
- the measuring method of the said shear force is as showing to the test example mentioned later.
- the chips obtained have a minimum side length
- the length is preferably 0.5 mm to 20 mm, particularly preferably 0.7 mm to 18 mm, and still more preferably 1.0 mm to 16 mm.
- the adhesive sheet for stealth dicing according to the present embodiment can suppress the displacement at the interface between the adhesive sheet for stealth dicing and the semiconductor wafer, and can cut and separate the semiconductor wafer favorably. By cutting and separating well, it is possible to obtain a small chip size as described above.
- the semiconductor wafer has a thickness of The thickness is preferably 10 ⁇ m to 1000 ⁇ m or less, particularly preferably 20 ⁇ m to 950 ⁇ m or less, and further preferably 30 ⁇ m to 900 ⁇ m or less.
- the thickness is preferably 10 ⁇ m to 1000 ⁇ m or less, particularly preferably 20 ⁇ m to 950 ⁇ m or less, and further preferably 30 ⁇ m to 900 ⁇ m or less.
- the stealth dicing pressure-sensitive adhesive sheet according to the present embodiment can suppress the displacement at the interface between the stealth dicing pressure-sensitive adhesive sheet and the semiconductor wafer, and can cut and separate the semiconductor wafer favorably. Even a relatively thick semiconductor wafer like this can be well cut and separated.
- the pressure-sensitive adhesive layer of the pressure-sensitive adhesive sheet for stealth dicing according to the present embodiment is not particularly limited as long as it satisfies the above-described shear force.
- the pressure-sensitive adhesive layer may be composed of a non-energy ray curable pressure sensitive adhesive or may be composed of an energy ray curable pressure sensitive adhesive.
- the non-energy ray curable adhesive those having desired adhesive strength and removability are preferable.
- acrylic adhesive, rubber adhesive, silicone adhesive, urethane adhesive, polyester adhesive And polyvinyl ether-based pressure-sensitive adhesives can be used.
- acrylic pressure-sensitive adhesives which can effectively suppress the detachment of a semiconductor wafer, a chip or the like in a modified layer forming step, a cool expanding step or the like are preferable.
- the energy ray curable adhesive is cured by energy ray irradiation and the adhesive force is reduced, the energy ray is required to separate the chip obtained by dividing the semiconductor wafer from the adhesive sheet for stealth dicing. It can be easily separated by irradiation.
- the energy ray-curable pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer may be a polymer having energy ray-curable properties as a main component, or a non-energy ray-curable polymer (polymer not having energy ray-curable properties) And mixtures thereof with at least one energy ray curable group-containing monomer and / or oligomer.
- it may be a mixture of a polymer having energy ray curability and a non-energy ray curable polymer, and a polymer having energy ray curability and a monomer having at least one or more energy ray curable groups and / or It may be a mixture with an oligomer, or may be a mixture of these three.
- the energy ray-curable pressure-sensitive adhesive contains a polymer having energy ray-curable properties as a main component will be described below.
- a polymer having energy ray curability is a (meth) acrylic acid ester (co) polymer (A) (hereinafter referred to as “energy ray,” in which a functional group (energy ray curable group) having energy ray curability is introduced in a side chain It may be referred to as a curable polymer (A).
- the energy ray-curable polymer (A) is prepared by reacting an acrylic copolymer (a1) having a functional group-containing monomer unit with an unsaturated group-containing compound (a2) having a functional group bonded to the functional group. It is preferable that it is obtained by
- (meth) acrylic acid ester means both acrylic acid ester and methacrylic acid ester. Other similar terms are also the same.
- the acrylic copolymer (a1) preferably contains a constituent unit derived from a functional group-containing monomer and a constituent unit derived from a (meth) acrylic acid ester monomer or a derivative thereof.
- the functional group-containing monomer as a constituent unit of the acrylic copolymer (a1) has, in its molecule, a polymerizable double bond and a functional group such as a hydroxy group, a carboxy group, an amino group, a substituted amino group or an epoxy group. It is preferable that it is a monomer which it has.
- hydroxy group-containing monomer for example, 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 3-hydroxybutyl (3-hydroxybutyl (meth) acrylate
- examples thereof include meta) acrylate, 4-hydroxybutyl (meth) acrylate and the like, and these can be used alone or in combination of two or more.
- carboxy group-containing monomers examples include ethylenically unsaturated carboxylic acids such as acrylic acid, methacrylic acid, crotonic acid, maleic acid, itaconic acid, citraconic acid and the like. These may be used alone or in combination of two or more.
- amino group-containing monomer or the substituted amino group-containing monomer examples include aminoethyl (meth) acrylate and n-butylaminoethyl (meth) acrylate. These may be used alone or in combination of two or more.
- the (meth) acrylic acid ester monomer constituting the acrylic copolymer (a1) in addition to an alkyl (meth) acrylate having 1 to 20 carbon atoms in the alkyl group, for example, an alicyclic structure is formed in the molecule
- the monomer which it has (alicyclic structure containing monomer) is used preferably.
- an alkyl (meth) acrylate having, in particular, an alkyl group having 1 to 18 carbon atoms, such as methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, n-butyl Meta) acrylate, 2-ethylhexyl (meth) acrylate or the like is preferably used.
- an alkyl (meth) acrylate having, in particular, an alkyl group having 1 to 18 carbon atoms such as methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, n-butyl Meta) acrylate, 2-ethylhexyl (meth) acrylate or the like is preferably used.
- One of these may be used alone, or two or more of these may be used in combination.
- Examples of the alicyclic structure-containing monomer include cyclohexyl (meth) acrylate, dicyclopentanyl (meth) acrylate, adamantyl (meth) acrylate, isobornyl (meth) acrylate, and dicyclopentenyl (meth) acrylate. And dicyclopentenyl oxyethyl (meth) acrylate are preferably used. One of these may be used alone, or two or more of these may be used in combination.
- the acrylic copolymer (a1) preferably contains 1 to 35% by mass, particularly preferably 5 to 30% by mass, and more preferably 10 to 25% by mass of constituent units derived from the functional group-containing monomer. contains.
- the acrylic copolymer (a1) preferably contains 50 to 99% by mass, particularly preferably 60 to 95% by mass, more preferably 70, of structural units derived from (meth) acrylic acid ester monomers or derivatives thereof. It is contained at a rate of 90% by mass.
- the acrylic copolymer (a1) can be obtained by copolymerizing the functional group-containing monomer as described above with a (meth) acrylic acid ester monomer or a derivative thereof in a conventional manner.
- Dimethyl acrylamide, vinyl formate, vinyl acetate, styrene or the like may be copolymerized.
- an energy ray-curable polymer (A) ) Is obtained.
- the functional group which an unsaturated group containing compound (a2) has can be suitably selected according to the kind of functional group of the functional group containing monomer unit which an acryl-type copolymer (a1) has.
- the functional group possessed by the acrylic copolymer (a1) is a hydroxy group, an amino group or a substituted amino group, an isocyanate group or an epoxy group is preferable as the functional group possessed by the unsaturated group-containing compound (a2).
- the functional group possessed by the copolymer (a1) is an epoxy group
- the functional group possessed by the unsaturated group-containing compound (a2) is preferably an amino group, a carboxy group or an aziridinyl group.
- the unsaturated group-containing compound (a2) at least one, preferably 1 to 6, and more preferably 1 to 4 energy ray-polymerizable carbon-carbon double bonds are contained in one molecule. ing.
- Specific examples of such unsaturated group-containing compound (a2) include 2-methacryloyloxyethyl isocyanate, meta-isopropenyl- ⁇ , ⁇ -dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate, 1,1- Bisacryloyloxymethyl) ethyl isocyanate; acryloyl monoisocyanate compound obtained by reaction of diisocyanate compound or polyisocyanate compound with hydroxyethyl (meth) acrylate; diisocyanate compound or polyisocyanate compound, polyol compound, hydroxyethyl (meth) Acryloyl monoisocyanate compounds obtained by reaction with acrylates; glycidyl (meth) acrylates
- the unsaturated group-containing compound (a2) is preferably 50 to 95 mol%, particularly preferably 60 to 93 mol%, and more preferably 50 to 95 mol%, relative to the molar number of the functional group-containing monomer of the acrylic copolymer (a1). It is used at a rate of 70 to 90 mol%.
- the functional group of the acrylic copolymer (a1) and the functional group of the unsaturated group-containing compound (a2) Depending on the combination, the reaction temperature, pressure, solvent, time, presence or absence of catalyst, and type of catalyst can be appropriately selected. Thereby, the functional group present in the acrylic copolymer (a1) and the functional group in the unsaturated group-containing compound (a2) react with each other, and the unsaturated group in the acrylic copolymer (a1) When introduced into the side chain, an energy ray-curable polymer (A) is obtained.
- the weight-average molecular weight (Mw) of the energy ray-curable polymer (A) thus obtained is preferably 10,000 or more, particularly preferably 150,000 to 1,500,000, and more preferably 200,000 to 100. It is preferable that it is ten thousand.
- the weight average molecular weight (Mw) in this specification is a value of standard polystyrene conversion measured by the gel permeation chromatography method (GPC method).
- the energy ray-curable pressure-sensitive adhesive is mainly composed of an energy ray-curable polymer such as an energy ray-curable polymer (A)
- the energy ray-curable pressure-sensitive adhesive is an energy ray-curable monomer And / or may further contain an oligomer (B).
- an ester of polyhydric alcohol with (meth) acrylic acid can be used.
- Examples of such an energy ray-curable monomer and / or oligomer (B) include monofunctional acrylic esters such as cyclohexyl (meth) acrylate and isobornyl (meth) acrylate, trimethylolpropane tri (meth) acrylate, penta Erythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, polyethylene glycol Polyfunctional acrylic acid esters such as di (meth) acrylate, dimethylol tricyclodecane di (meth) acrylate, polyester oligo (meth) acrylate, polyurethane oligo (meth Acrylate, and the like.
- monofunctional acrylic esters such as
- the energy ray-curable monomer and / or oligomer (B) When the energy ray-curable monomer and / or oligomer (B) is blended with the energy ray-curable polymer (A), the energy ray-curable monomer and / or oligomer in the energy ray-curable adhesive (B)
- the content of) is preferably 0.1 to 180 parts by mass, particularly preferably 60 to 150 parts by mass with respect to 100 parts by mass of the energy ray-curable polymer (A).
- photopolymerization initiator (C) examples include benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, methyl benzoin benzoate, benzoin dimethyl ketal, 2,4-diethylthioxanthone, 1-hydroxycyclohexyl phenyl ketone, benzyl diphenyl sulfide, tetramethyl thiuram monosulfide, azobisisobutyronitrile, benzyl, dibenzyl, diacetyl, ⁇ -chloroanthraquinone, (2,4, 6-trimethylbenzyl diphenyl) phosphine oxide, 2-benzothiazole-N, N-diethyldithiocarbamate, oligo ⁇ 2-hydroxy-2-me Le-1- [
- the photopolymerization initiator (C) contains the energy ray-curable polymer (A) (energy ray-curable monomer and / or oligomer (B), the energy ray-curable polymer (A) and the energy 0.1 to 10 parts by mass, in particular 0.5 to 6 parts by mass, with respect to 100 parts by mass of the total amount of linear curable monomer and / or oligomer (B) 100 parts by mass) Is preferred.
- energy ray-curable pressure-sensitive adhesive in addition to the above components, other components may be appropriately blended.
- Other components include, for example, non-energy ray curable polymer component or oligomer component (D), crosslinking agent (E), polymerizable branched polymer (F) and the like.
- non-energy ray curable polymer component or oligomer component (D) examples include polyacrylic esters, polyesters, polyurethanes, polycarbonates, polyolefins, hyperbranched polymers and the like, and the weight average molecular weight (Mw) is 3,000 to 2,500,000.
- Mw weight average molecular weight
- the compounding amount of the component (D) is not particularly limited, and is appropriately determined in the range of 0.01 to 50 parts by mass with respect to 100 parts by mass of the energy ray-curable polymer (A).
- the polyfunctional compound which has the reactivity with the functional group which energy-beam-curable polymer (A) etc. have can be used.
- examples of such polyfunctional compounds include isocyanate compounds, epoxy compounds, amine compounds, melamine compounds, aziridine compounds, hydrazine compounds, aldehyde compounds, oxazoline compounds, metal alkoxide compounds, metal chelate compounds, metal salts, ammonium salts, Reactive phenol resin etc. can be mentioned.
- the shear force described above can be adjusted by blending the crosslinking agent (E) into the energy ray curable adhesive.
- the compounding amount of the crosslinking agent (E) is preferably 0.01 to 8 parts by mass, particularly preferably 0.04 to 5 parts by mass with respect to 100 parts by mass of the energy ray-curable polymer (A). Is more preferable, and 0.05 to 3.5 parts by mass is more preferable.
- the polymerizable branched polymer (F) means a polymer having an energy ray polymerizable group and a branched structure.
- the energy ray-curable adhesive contains a polymerizable branched polymer, transfer of the organic substance from the adhesive layer to the semiconductor wafer or semiconductor chip laminated on the adhesive sheet for stealth dicing can be suppressed, and also stealth In the step of individually picking up semiconductor chips from the pressure-sensitive adhesive sheet for dicing, it is possible to reduce the mechanical load that the semiconductor chips receive.
- the polymerizable branched polymer (F) has an interface with the semiconductor wafer or the semiconductor chip in the adhesive layer.
- the polymer has a tendency to be present in the vicinity, or the polymerizable branched polymer (F) is irradiated with an energy ray to form an energy ray curable polymer (A) or an energy ray curable monomer and / or Polymerization with the oligomer (B) may be affected.
- the specific structure such as the molecular weight of the polymerizable branched polymer (F), the degree of the branched structure, and the number of energy ray-polymerizable groups contained in one molecule is not particularly limited.
- a method of obtaining such a polymerizable branched polymer (F) first, a monomer having two or more radically polymerizable double bonds in the molecule, an active hydrogen group and one radically polymerizable
- a polymer having a branched structure is obtained by polymerizing a monomer having a double bond in the molecule and a monomer having one radically polymerizable double bond in the molecule.
- the obtained polymer is reacted with a compound having a functional group capable of forming a bond by reacting with the active hydrogen group of the polymer and at least one radically polymerizable double bond in the molecule.
- the polymerizable branched polymer (F) can be obtained.
- a commercial item of the polymerizable branched polymer (F) for example, “OD-007” manufactured by Nissan Chemical Industries, Ltd. can be used.
- the weight average molecular weight (Mw) of the polymerizable branched polymer (F) is to appropriately suppress the interaction with the energy ray curable polymer (A) and the energy ray curable monomer and / or oligomer (B) From the viewpoint of facilitating the reaction, it is preferably 1,000 or more, and particularly preferably 3,000 or more.
- the weight average molecular weight (Mw) is preferably 100,000 or less, and particularly preferably 30,000 or less.
- the content of the polymerizable branched polymer (F) in the pressure-sensitive adhesive layer is not particularly limited, but from the viewpoint of favorably achieving the above-mentioned effects of containing the polymerizable branched polymer (F), energy beam curing is usually performed. It is preferable that it is 0.01 mass part or more with respect to 100 mass parts of type polymers (A), and it is preferable that it is 0.1 mass part or more. Since the polymerizable branched polymer (F) has a branched structure, the above-mentioned effects can be favorably obtained even if the content in the pressure-sensitive adhesive layer is relatively small.
- the polymerizable branched polymer (F) may remain as particles on the contact surface of the semiconductor wafer or the semiconductor chip with the pressure-sensitive adhesive layer. It is preferable that the number of remaining particles is small, since these particles may reduce the reliability of the product provided with the semiconductor chip. Specifically, the number of particles having a particle diameter of 0.20 ⁇ m or more remaining on a silicon wafer as a semiconductor wafer is preferably less than 100, and particularly preferably 50 or less.
- the content of the polymerizable branched polymer (F) is 3.0 parts by mass with respect to 100 parts by mass of the energy ray-curable polymer (A)
- the amount is preferably less than 2.5 parts by mass, particularly preferably 2.5 parts by mass or less, and more preferably 2.0 parts by mass or less.
- the energy ray-curable adhesive is mainly composed of a mixture of a non-energy ray-curable polymer component and a monomer and / or oligomer having at least one energy ray-curable group will be described below. .
- non-energy ray curable polymer component for example, the same component as the acrylic copolymer (a1) described above can be used.
- the same one as the component (B) described above can be selected.
- the compounding ratio of the non-energy ray curable polymer component to the monomer and / or oligomer having at least one energy ray curable group is at least one or more with respect to 100 parts by mass of the non energy ray curable polymer component.
- the amount is preferably 1 to 200 parts by mass, particularly preferably 60 to 160 parts by mass, of the monomer and / or oligomer having an energy ray-curable group.
- the photopolymerization initiator (C) and the crosslinking agent (E) can be appropriately blended in the same manner as described above.
- the thickness of the pressure-sensitive adhesive layer is not particularly limited as long as the pressure-sensitive adhesive sheet for stealth dicing according to the present embodiment can properly function in each step. Specifically, the thickness is preferably 1 to 50 ⁇ m, particularly preferably 3 to 40 ⁇ m, and further preferably 5 to 30 ⁇ m.
- the pressure-sensitive adhesive layer in the pressure-sensitive adhesive sheet for stealth dicing preferably has a storage elastic modulus at 0 ° C. of 0.02 to 40.0 MPa, particularly preferably 0.10 to 30.0 MPa And further preferably 0.50 to 20.0 MPa.
- the measuring method of the said storage elastic modulus is as showing to the test example mentioned later.
- the base material of the pressure-sensitive adhesive sheet for stealth dicing preferably has a storage elastic modulus at 0 ° C. of 100 MPa or more and 1500 MPa or less.
- a storage elastic modulus at 0 ° C. 100 MPa or more and 1500 MPa or less.
- the storage elastic modulus of the base material is excessively low, in the expanding step, the area where the semiconductor wafer is not laminated is preferentially expanded rather than the area where the semiconductor wafer is laminated in the adhesive sheet for stealth dicing It becomes easy to do.
- the storage elastic modulus is in the above range, the area where the semiconductor wafer is laminated in the adhesive sheet for stealth dicing can be expanded well, and as a result, the individual chips are effectively cut and separated. It becomes possible.
- the measuring method of the said storage elastic modulus is as showing to the test example mentioned later.
- the base material exhibits a predetermined rigidity when the storage elastic modulus is 100 MPa or more
- the pressure-sensitive adhesive layer formed on a release sheet or the like can be laminated on the base material by transfer, efficiently for stealth dicing An adhesive sheet can be manufactured. Furthermore, the handling of the adhesive sheet for stealth dicing is also improved.
- the pressure-sensitive adhesive sheet for stealth dicing is favorably expanded by cool expansion when the storage elastic modulus is 1,500 MPa or less.
- the semiconductor wafer can be favorably supported by the stealth dicing pressure-sensitive adhesive sheet mounted on the ring frame.
- the lower limit value of the storage elastic modulus is more preferably 120 MPa or more, and particularly preferably 150 MPa or more.
- the upper limit of the storage elastic modulus is more preferably 1200 MPa or less, and particularly preferably 1000 MPa or less.
- the base in the pressure-sensitive adhesive sheet for stealth dicing When performing a modified layer forming step of irradiating a semiconductor wafer bonded to a pressure-sensitive adhesive sheet for stealth dicing with a laser beam through the pressure-sensitive adhesive sheet for stealth dicing, the base in the pressure-sensitive adhesive sheet for stealth dicing according to the present embodiment
- the material exhibits excellent light transmittance to light of the wavelength of the laser light.
- a base material has the light transmittance with respect to the said energy ray.
- the energy ray will be described later.
- the base material in the adhesive sheet for stealth dicing which concerns on this embodiment is a thing containing the film (resin film) which has a resin-based material as a main material, and it is preferable to consist only of a resin film especially.
- the resin film examples include ethylene-vinyl acetate copolymer film; ethylene- (meth) acrylic acid copolymer film, ethylene-methyl (meth) acrylate copolymer film, and other ethylene- (meth) acrylic resins
- Ethylene copolymer films such as acid ester copolymer films
- Polyolefin films such as polyethylene films, polypropylene films, polybutene films, polybutadiene films, polymethylpentene films, ethylene-norbornene copolymer films, norbornene resin films
- Polyvinyl chloride-based films such as vinyl films and vinyl chloride copolymer films
- Polyester-based films such as polyethylene terephthalate films, polybutylene terephthalate films and polyethylene naphthalates Beam; and the like fluororesin film; (meth) acrylic acid ester copolymer film; polyurethane film; polyimide film; polystyrene films; polycarbonate films.
- polyethylene films examples include low density polyethylene (LDPE) films, linear low density polyethylene (LLDPE) films, high density polyethylene (HDPE) films, and the like.
- modified films such as these crosslinked films and ionomer films are also used.
- the substrate may be a film made of one of these, or a film made of a combination of two or more of these.
- it may be a laminated film of a multilayer structure in which a plurality of layers made of one or more of the materials described above are laminated. In this laminated film, the materials constituting each layer may be the same or different.
- polyolefin-based films such as ethylene-methacrylic acid copolymer film, polyethylene film, polypropylene film, etc., ionomer films of such polyolefins, polychlorinated films, etc., as the substrate, in consideration of use in the cool expanding process. It is preferable to use a vinyl-based film, a polyurethane film, or a (meth) acrylic acid ester copolymer film.
- the above-mentioned film contains various additives such as a filler, a flame retardant, a plasticizer, an antistatic agent, a lubricant, an antioxidant, a coloring agent, an infrared absorber, an ultraviolet absorber, an ion scavenger and the like. It may be done.
- the content of these additives is not particularly limited, but it is preferable to set the range in which the substrate exhibits a desired function.
- the surface of the substrate on the pressure-sensitive adhesive layer side is a primer in order to enhance adhesion with the pressure-sensitive adhesive layer.
- Surface treatment such as treatment, corona treatment, plasma treatment may be applied.
- the thickness of the substrate is not limited as long as it can function properly in the process in which the stealth dicing pressure-sensitive adhesive sheet is used.
- the thickness is usually preferably 20 to 450 ⁇ m, particularly preferably 25 to 250 ⁇ m, and further preferably 50 to 150 ⁇ m.
- Release Sheet In order to protect the pressure-sensitive adhesive layer until the pressure-sensitive adhesive sheet for stealth dicing is used, on the surface of the pressure-sensitive adhesive sheet for stealth dicing according to this embodiment, on the opposite side to the substrate side. A release sheet may be laminated.
- a release sheet For example, a polyethylene film, a polypropylene film, a polybutene film, a polybutadiene film, a polymethyl pentene film, a polyvinyl chloride film, a vinyl chloride copolymer film, a polyethylene terephthalate film, a polyethylene naphthalate film Polybutylene terephthalate film, polyurethane film, ethylene vinyl acetate film, ionomer resin film, ethylene- (meth) acrylic acid copolymer film, ethylene- (meth) acrylic acid ester copolymer film, polystyrene film, polycarbonate film, polyimide film And fluorine resin films and the like can be used. Moreover, you may use these crosslinked films. Furthermore, it may be a laminated film in which a plurality of these films are laminated.
- the peeling process is performed to the peeling surface (The surface which has peeling property; especially the surface which contacts an adhesive layer) of the said peeling sheet.
- the release agent used for the release treatment include alkyd-based, silicone-based, fluorine-based, unsaturated polyester-based, polyolefin-based and wax-based release agents.
- the thickness of the release sheet is not particularly limited, and is usually about 20 ⁇ m to 100 ⁇ m.
- the adhesive force to a silicon mirror wafer at 0 ° C. is preferably 0.5 N / 25 mm or more, and particularly preferably 1.0 N / 25 mm or more .
- the adhesive strength is preferably 30 N / 25 mm or less, and more preferably 25 N / 25 mm or less.
- the adhesion to a silicon mirror wafer after energy ray irradiation at 23 ° C. is 10 mN / 25 mm or more Is preferably 20 mN / 25 mm or more.
- the adhesive strength is preferably 1000 mN / 25 mm or less, particularly preferably 900 mN / 25 mm or less.
- the adhesion at 0 ° C. and the adhesion after energy ray irradiation at 23 ° C. can be measured by the following method.
- a sheet for semiconductor processing is cut into a width of 25 mm, and the surface on the pressure-sensitive adhesive layer side is attached to a silicon mirror wafer.
- This sticking can be performed using a laminator (product name: RAD-3510F / 12, manufactured by Lintec Corporation) under the conditions of sticking speed 10 mm / s, wafer protrusion amount 20 ⁇ m and roller pressure 0.1 MPa.
- seat for semiconductor processings obtained and a silicon mirror wafer is left to stand for 20 minutes in 23 degreeC and the atmosphere of 50% RH.
- UV irradiation (illuminance 230 mW / cm 2 , light quantity 190 mJ / cm 2 ) is performed from the substrate side of the sheet under a nitrogen atmosphere.
- a sheet with a peeling angle of 180 ° and a peeling speed of 300 mm / min using a universal tensile tester (product name “RTG-1225” manufactured by AMD) according to JIS Z0237 Is peeled off from the silicon mirror wafer, and the measured value is taken as the adhesion (mN / 25 mm).
- a universal tensile tester product name “RTG-1225” manufactured by AMD
- the measurement using the above-mentioned universal tensile tester is performed under an environment of 0 ° C.
- the manufacturing method of the adhesive sheet for stealth dicing which concerns on this embodiment is not specifically limited, A normal method can be used.
- a pressure-sensitive adhesive composition containing a material of a pressure-sensitive adhesive layer, and, if desired, a coating composition containing a solvent or a dispersion medium are prepared.
- the coating composition is applied onto the release surface of the release sheet by a die coater, a curtain coater, a spray coater, a slit coater, a knife coater or the like to form a coating film.
- the pressure-sensitive adhesive layer is formed by drying the coating film.
- the pressure-sensitive adhesive sheet for stealth dicing is obtained by pasting the pressure-sensitive adhesive layer on the release sheet and the substrate.
- the properties of the coating composition are not particularly limited as long as the composition can be coated.
- the component for forming an adhesive layer may be contained as a solute in the composition for coating, or may be contained as a dispersoid.
- the above-mentioned drying conditions may be changed in order to form a crosslinked structure at a desired existing density, or heat treatment You may provide separately.
- the crosslinking reaction usually, after laminating the pressure-sensitive adhesive layer on the substrate by the above method etc., the obtained pressure-sensitive adhesive sheet for stealth dicing is put in an environment of 23 ° C. and 50% relative humidity, for example. It cures by leaving it to stand for several days.
- the said composition for coating is apply
- the coating film is dried to form a laminate of the substrate and the pressure-sensitive adhesive layer.
- the exposed surface of the pressure-sensitive adhesive layer in the laminate is bonded to the release surface of the release sheet.
- a method of manufacturing a semiconductor device includes a bonding step of bonding the pressure-sensitive adhesive layer of the pressure-sensitive adhesive sheet for stealth dicing (pressure-sensitive adhesive sheet for stealth dicing according to the present embodiment) and the semiconductor wafer.
- a bonding process may be performed prior to a modification layer formation process, conversely, a modification layer formation process may be performed first before a bonding process.
- the semiconductor wafer bonded to the adhesive sheet for stealth dicing according to the present embodiment is irradiated with laser light.
- the semiconductor wafer bonded to another adhesive sheet for example, a back grind sheet
- the stealth dicing pressure-sensitive adhesive sheet is used at least in the cool expand process, the shift at the interface between the stealth dicing pressure-sensitive adhesive sheet and the semiconductor wafer occurs in the cool expand process. It becomes difficult to occur.
- the force for pulling the semiconductor wafer in the peripheral direction which is generated by the expansion of the adhesive sheet for stealth dicing, tends to be concentrated on the modified layer, and as a result, the semiconductor wafer is favorably divided in the modified layer. Therefore, even when the obtained chip size is small, the occurrence of problems such as division failure and chip breakage can be suppressed, and a chip that is favorably segmented can be obtained.
- the adhesive film (DAF, NCF, etc.) is formed on the surface of the semiconductor wafer bonded to the adhesive sheet for stealth dicing opposite to the adhesive sheet side for stealth dicing.
- the method may further comprise a laminating step of laminating According to the method of manufacturing a semiconductor device according to the present embodiment, since the cool expanding step is performed, the bonding film can be favorably divided in a low temperature environment.
- the bonding process which bonds the pressure-sensitive adhesive layer and the semiconductor wafer of the pressure-sensitive adhesive sheet for stealth dicing according to the present embodiment is performed.
- the surface on the adhesive layer side of the adhesive sheet for stealth dicing is mounted on one surface of the semiconductor wafer, but the present invention is not limited to this.
- a ring frame is usually attached to a region on the outer peripheral side of the region to which the semiconductor wafer is attached on the adhesive layer side of the adhesive sheet for stealth dicing. In this case, in plan view, an area where the adhesive layer is exposed is present as a peripheral area between the ring frame and the semiconductor wafer.
- a laminating step of laminating a bonding film may be performed on the surface of the semiconductor wafer bonded to the adhesive sheet for stealth dicing opposite to the adhesive sheet side for stealth dicing.
- This lamination is usually performed by heat lamination (thermal lamination).
- the adhesive film is usually laminated on the electrode side of the semiconductor wafer because the electrode is present on the surface of the semiconductor wafer opposite to the adhesive sheet side for stealth dicing.
- the adhesive film may be any of DAF, NCF, etc., and usually has heat-sensitive adhesiveness. It does not specifically limit as a material,
- the film-like member formed from the adhesive composition containing heat-resistant resin materials, such as a polyimide resin, an epoxy resin, and a phenol resin, and a hardening accelerator is mentioned as a specific example.
- a modified layer forming step of forming a modified layer inside the semiconductor wafer is performed after the above bonding step or after the laminating step, but the modified layer is performed before these steps.
- the modified layer forming step is usually performed by irradiating an infrared laser beam so as to be focused on a focal point set inside the semiconductor wafer (stealth dicing processing). The irradiation of the laser beam may be performed from any side of the semiconductor wafer. If the modified layer forming step is performed after the laminating step, it is preferable to irradiate a laser beam through the adhesive sheet for stealth dicing.
- a laser beam is directly transmitted to a semiconductor wafer not via the adhesive sheet for stealth dicing. Irradiation is preferred.
- a cool expanding step of cutting and separating the semiconductor wafer is performed by expanding the adhesive sheet for stealth dicing under a low temperature environment.
- a semiconductor chip obtained by dividing the semiconductor wafer is attached.
- the adhesive film is also divided simultaneously with the division of the semiconductor wafer by an expanding step, and a chip with an adhesive layer is obtained.
- the temperature at which the pressure-sensitive adhesive sheet for stealth dicing is expanded may be a general cool expand temperature, and as described above, it is usually 10 ° C. or less, preferably 6 ° C. or less, and more preferably Is preferably 4 ° C. or less.
- the lower limit value of the temperature of cool expansion is not particularly limited, and is usually ⁇ 20 ° C. or higher, preferably ⁇ 15 ° C. or higher, and more preferably ⁇ 10 ° C. or higher.
- the semiconductor wafer can be favorably cut and separated into chips, and the adhesive film is laminated. The film is also divided well.
- Re-expanding step After the cool expanding step, the adhesive sheet for stealth dicing and the semiconductor chip or the chip with the adhesive layer laminated thereon are returned to the room temperature environment, and the expanding process is performed again under the room temperature environment. May be (re-expanding step).
- the specific conditions in the re-expanding step are not particularly limited except that the expanding is performed at room temperature (for example, 23 ° C.).
- a slack occurs in the peripheral region (region between the ring frame and the chip group in plan view) of the pressure-sensitive adhesive sheet for stealth dicing by this re-expanding step.
- the pressure-sensitive adhesive layer of the pressure-sensitive adhesive sheet for stealth dicing is an energy ray-curable pressure-sensitive adhesive
- the pressure-sensitive adhesive layer is irradiated with energy rays at any stage after the bonding step and before the pickup step. It is preferable to cure the pressure-sensitive adhesive layer to reduce the adhesive strength. This makes it possible to pick up the chip more easily.
- Examples of energy rays include ionizing radiation, that is, X-rays, ultraviolet rays, and electron beams. Among these, ultraviolet light which is relatively easy to introduce irradiation equipment is preferable.
- near ultraviolet light including ultraviolet light having a wavelength of about 200 to 380 nm may be used because of easy handling.
- the amount of ultraviolet light may be appropriately selected according to the type of energy ray-curable adhesive contained in the adhesive layer and the thickness of the adhesive layer, and is usually about 50 to 500 mJ / cm 2 and 100 to 450 mJ. / Cm 2 is preferable, and 150 to 400 mJ / cm 2 is more preferable.
- the ultraviolet illumination is usually 50 ⁇ 500mW / cm 2 or so, preferably 100 ⁇ 450mW / cm 2, more preferably 150 ⁇ 400mW / cm 2.
- an ultraviolet-ray source For example, a high pressure mercury lamp, a metal halide lamp, a light emitting diode (LED) etc. are used.
- the accelerating voltage is appropriately selected according to the type of energy beam polymerizable group contained in the pressure sensitive adhesive layer, the type of energy beam polymerizable compound and the thickness of the pressure sensitive adhesive layer. It is preferable that the acceleration voltage is usually about 10 to 1000 kV.
- the irradiation dose may be appropriately selected according to the type of energy ray-curable adhesive contained in the adhesive layer and the thickness of the adhesive layer, and is usually selected in the range of 10 to 1000 krad.
- an electron beam source there is no restriction
- various electron beam accelerators such as a Cockloft Wharton type, a bande graft type, a resonant transformer type, an insulation core transformer type, or a linear type, a dynamitron type, a high frequency type, are used. be able to.
- a semiconductor device can be manufactured using the adhesive sheet for stealth dicing according to the present embodiment.
- MOI methacryloyloxyethyl isocyanate
- MOI Methacryloyloxyethyl isocyanate
- MOI ethyl isocyanate
- An energy ray-curable polymer was obtained by reacting ethyl isocyanate (MOI).
- MOI ethyl isocyanate
- Mw weight-average molecular weight
- MOI Methacryloyloxyethyl isocyanate
- MOI ethyl isocyanate
- MOI methacryloyloxyethyl isocyanate
- the obtained laminate was cut into a length of 50 mm and a width of 30 mm under an environment of a temperature of 23 ° C. and a relative humidity of 50%, and then the release sheet was peeled off from the pressure-sensitive adhesive layer to obtain a sample.
- This sample was attached to the mirror surface of a silicon mirror wafer (thickness: 350 ⁇ m) via a pressure-sensitive adhesive layer under an environment of a temperature of 23 ° C. and a relative humidity of 50%.
- a 2 kg roller was reciprocated once with respect to the sample to apply a load, and the sample was pasted so that a 3 mm portion in the longitudinal direction of the sample was in close contact with the silicon wafer.
- reference numeral 1 indicates a backing adhesive sheet for stealth dicing (sample)
- reference numeral 2 indicates a silicon mirror wafer
- reference numeral 11 indicates a base material
- reference numeral 12 indicates an adhesive layer
- reference numeral 13 indicates a backing material.
- test object obtained is transferred to an environment of 0 ° C., and 20 minutes after the application, an autograph (Imada Works, Ltd. under the condition of a tension rate of 1 mm / min. Under an environment of 0 ° C.)
- An autograph Imada Works, Ltd. under the condition of a tension rate of 1 mm / min. Under an environment of 0 ° C.
- a tensile test was performed using a product name “SDT-203NB-50R3”, and shear force (N / (3 mm ⁇ 20 mm)) was measured. The results are shown in Table 1.
- the storage elastic modulus (MPa) of the pressure-sensitive adhesive layer at 0 ° C. was measured for the measurement sample under the following apparatus and conditions. The results are shown in Table 1. Measuring device: manufactured by TA Instruments, dynamic elastic modulus measuring device "ARES" Distance between measurements: 20 mm Test start temperature: -30 ° C Test end temperature: 120 ° C Heating rate: 3 ° C / min Frequency: 11 Hz Amplitude: 20 ⁇ m
- the laser irradiation at this time was performed in four ways so that the size of the obtained chip was 16 mm square, 8 mm square, 4 mm square and 1 mm square, respectively.
- Irradiation height 100 ⁇ m from the tape side
- the pressure-sensitive adhesive sheet for stealth dicing obtained in the examples can well divide the wafer on which the modified layer is formed by cool expanding, and in particular, the chip size is 4 mm square Even when the size was as small as 1 mm square, excellent divisibility was shown.
- the adhesive sheet for stealth dicing which concerns on this invention is used suitably for the manufacturing method of the semiconductor device which performs cool expansion.
- Adhesive sheet for stealth dicing with backing material 11: Base material 12: adhesive layer 13: backing material 2: silicon mirror wafer
Landscapes
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
Abstract
Description
〔ステルスダイシング用粘着シート〕
本発明の一実施形態に係るステルスダイシング用粘着シートは、少なくとも、内部に改質層が形成された半導体ウエハを、低温環境下で個々のチップに切断分離するために使用されるものである。ここで、低温環境下とは、DAFやNCFが十分に脆性化する温度環境下のことをいい、例えば10℃以下の環境下であることを意味し、特に6℃以下の環境下であることが好ましく、さらには4℃以下の環境下であることが好ましい。また、ここにいう低温環境下における温度の下限値は特に制限されず、例えば、低温環境下とは、-20℃以上の環境下であることを意味し、特に-15℃以上の環境下であることが好ましく、さらには-10℃以上の環境下であることが好ましい。10℃を超える環境下では、DAFやNCFの脆性化が不十分となり、良好な分割を行うことができないおそれがある。また、-20℃未満の環境下では、DAF、NCFまたは粘着シートがそれらのガラス転移温度(Tg)以下の環境下に置かれることになるため、それらと半導体ウエハとの密着性が低下する懸念があり、またエキスパンド時に粘着シートの破断が生じる懸念がある。半導体ウエハ内部に改質層を形成する工程(改質層形成工程)は、半導体ウエハが当該ステルスダイシング用粘着シートに貼合された状態で行われてもよいし、半導体ウエハが当該ステルスダイシング用粘着シートに貼合される前に行われてもよい。なお、本明細書における「シート」には「テープ」の概念も含まれるものとする。
本実施形態に係るステルスダイシング用粘着シートの粘着剤層は、上記のせん断力を満たすものであれば、特に限定されない。当該粘着剤層は、非エネルギー線硬化性粘着剤から構成されてもよいし、エネルギー線硬化性粘着剤から構成されてもよい。非エネルギー線硬化性粘着剤としては、所望の粘着力および再剥離性を有するものが好ましく、例えば、アクリル系粘着剤、ゴム系粘着剤、シリコーン系粘着剤、ウレタン系粘着剤、ポリエステル系粘着剤、ポリビニルエーテル系粘着剤等を使用することができる。これらの中でも、改質層形成工程やクールエキスパンド工程等にて半導体ウエハやチップ等の脱落を効果的に抑制することのできるアクリル系粘着剤が好ましい。
本実施形態に係るステルスダイシング用粘着シートにおける基材は、0℃における貯蔵弾性率が、100MPa以上、1500MPa以下であるものが好ましい。一般的に、基材の貯蔵弾性率が過度に低い場合、エキスパンド工程において、ステルスダイシング用粘着シートにおける半導体ウエハが積層されている領域よりも、半導体ウエハが積層されていない領域において優先的に伸張し易いものとなってしまう。しかしながら、上記貯蔵弾性率が上記範囲であることで、ステルスダイシング用粘着シートにおける半導体ウエハが積層されている領域も良好に伸張することができ、その結果、個々のチップを効果的に切断分離することが可能となる。なお、上記貯蔵弾性率の測定方法は、後述する試験例に示す通りである。
本実施形態に係るステルスダイシング用粘着シートにおける粘着剤層の基材側とは反対側の面には、当該ステルスダイシング用粘着シートが使用されるまで、粘着剤層を保護するために、剥離シートが積層されていてもよい。
本実施体形態に係るステルスダイシング用粘着シートでは、0℃におけるシリコンミラーウエハに対する粘着力が、0.5N/25mm以上であることが好ましく、特に1.0N/25mm以上であることが好ましい。また、当該粘着力は、30N/25mm以下であることが好ましく、特に25N/25mm以下であることが好ましい。0℃における粘着力が上記範囲であることで、クールエキスパンド工程において粘着シートをエキスパンドする際に、半導体ウエハや得られる半導体チップの所定の位置に維持し易くなり、半導体ウエハの改質層部分における分断を良好に行うことが可能となる。なお、粘着剤層がエネルギー線硬化性粘着剤から構成される場合、上記粘着力は、エネルギー線照射前の粘着力をいうものとする。また、粘着力は、後述する方法により測定されたものをいう。
本実施形態に係るステルスダイシング用粘着シートの製造方法は、特に限定されず、常法を使用することができる。当該製造方法の第1の例としては、まず、粘着剤層の材料を含む粘着剤組成物、および所望によりさらに溶媒または分散媒を含有する塗工用組成物を調製する。次に、この塗工用組成物を、剥離シートの剥離面上に、ダイコーター、カーテンコーター、スプレーコーター、スリットコーター、ナイフコーター等により塗布して塗膜を形成する。さらに、当該塗膜を乾燥させることにより、粘着剤層を形成する。その後、剥離シート上の粘着剤層と基材とを貼合することで、ステルスダイシング用粘着シートが得られる。塗工用組成物は、塗布を行うことが可能であればその性状は特に限定されない。粘着剤層を形成するための成分は、塗工用組成物中に溶質として含有されてもよく、または分散質として含有されてもよい。
本発明の一実施形態に係る半導体装置の製造方法は、前述したステルスダイシング用粘着シート(本実施形態に係るステルスダイシング用粘着シート)の粘着剤層と半導体ウエハとを貼合する貼合工程と、半導体ウエハの内部に改質層を形成する改質層形成工程と、低温環境下でステルスダイシング用粘着シートをエキスパンドして、内部に改質層が形成された半導体ウエハを個々のチップに切断分離するクールエキスパンド工程とを備える。
まず、本実施形態に係るステルスダイシング用粘着シートの粘着剤層と半導体ウエハとを貼合する貼合工程を行う。通常は、ステルスダイシング用粘着シートの粘着剤層側の面を、半導体ウエハの一方の面にマウントするが、これに限定されるものではない。この貼合工程では、通常、ステルスダイシング用粘着シートの粘着剤層側の面における、半導体ウエハが貼着している領域の外周側の領域に、リングフレームが貼付される。この場合、平面視で、リングフレームと半導体ウエハとの間には粘着剤層が露出した領域が、周縁領域として存在する。
次に、ステルスダイシング用粘着シートに貼合された半導体ウエハにおけるステルスダイシング用粘着シート側とは反対側の面に、接着用フィルムを積層するラミネート工程を行ってもよい。この積層は、通常、加熱積層(熱ラミネート)によって行う。半導体ウエハが表面に電極を有する場合、通常、半導体ウエハにおけるステルスダイシング用粘着シート側とは反対側の面に電極が存在するため、接着用フィルムは、半導体ウエハの電極側に積層される。
好ましくは、上記貼合工程後またはラミネート工程後に、半導体ウエハの内部に改質層を形成する改質層形成工程を行うが、それらの工程の前に改質層形成工程を行ってもよい。改質層形成工程は、通常、半導体ウエハの内部に設定された焦点に集束されるように赤外域のレーザ光を照射することにより行う(ステルスダイシング加工)。レーザ光の照射は、半導体ウエハのいずれの側から行ってもよい。改質層形成工程を、ラミネート工程後に行う場合であれば、ステルスダイシング用粘着シート越しにレーザ光を照射することが好ましい。また、改質層形成工程を上記貼合工程と上記ラミネート工程との間に行う場合、または上記ラミネート工程を行わない場合には、ステルスダイシング用粘着シートを介さず、半導体ウエハに直接レーザ光を照射することが好ましい。
改質層形成工程の後、低温環境下でステルスダイシング用粘着シートをエキスパンドすることにより、半導体ウエハを切断分離するクールエキスパンド工程を行う。これにより、ステルスダイシング用粘着シートの粘着剤層上には、半導体ウエハが分割されてなる半導体チップが貼着した状態となる。また、半導体ウエハ上に接着フィルムが積層されている場合には、エキスパンド工程により当該接着フィルムも半導体ウエハの分割と同時に分割され、接着剤層付きチップが得られる。
クールエキスパンド工程を行った後、ステルスダイシング用粘着シートおよびその上に積層された半導体チップまたは接着剤層付きチップを室温環境下に戻し、室温環境下で再度エキスパンド工程を行ってもよい(再エキスパンド工程)。再エキスパンド工程における具体的な条件は、エキスパンドを室温(例えば23℃)で行うことを除いて特に制限されない。
再エキスパンド工程により、ステルスダイシング用粘着シートの周縁領域に弛みが生じた場合には、当該周縁領域を加熱するシュリンク工程を行うことが好ましい。ステルスダイシング用粘着シートの周辺領域を加熱することにより、この周縁領域に位置する基材が収縮し、再エキスパンド工程で生じたステルスダイシング用粘着シートの弛み量を低減させることが可能となる。シュリンク工程における加熱方法は限定されない。熱風を吹き付けてもよいし、赤外線を照射してもよいし、マイクロ波を照射してもよい。
再エキスパンド工程を行う場合には、それに続くシュリンク工程の後、再エキスパンド工程を行わない場合には、クールエキスパンド工程の後に、ステルスダイシング用粘着シートに貼着しているチップを個別にステルスダイシング用粘着シートからピックアップして、チップを半導体装置として得るピックアップ工程を行う。
(1)粘着剤組成物の調製
ラウリルアクリレート/メチルメタクリレート/2-ヒドロキシエチルアクリレート=42/30/28(質量比)を反応させて得られたアクリル系共重合体と、その2-ヒドロキシエチルアクリレートに対して80モル%のメタクリロイルオキシエチルイソシアネート(MOI)とを反応させて、エネルギー線硬化型重合体(Mw:40万)を得た。
剥離シート(リンテック社製,製品名「SP-PET3811」)の剥離面上に、上記の粘着剤組成物を塗布した。次いで、加熱による乾燥を行い、粘着剤組成物の塗膜を粘着剤層とした。この粘着剤層の厚さは10μmであった。その後、得られた剥離シート上の粘着剤層と、基材として一方の面がコロナ処理されたエチレン-メタクリル酸共重合体(EMAA)フィルム(厚さ:80μm,コロナ処理面の表面張力:54mN/m)のコロナ処理面とを貼合することで、ステルスダイシング用粘着シートを得た。
2-エチルヘキシルアクリレート/メチルメタクリレート/2-ヒドロキシエチルアクリレート=42/30/28(質量比)を反応させて得られたアクリル系共重合体と、その2-ヒドロキシエチルアクリレートに対して80モル%のメタクリロイルオキシエチルイソシアネート(MOI)とを反応させて、エネルギー線硬化型重合体(Mw:40万)を得た。
ブチルアクリレート/メチルメタクリレート/2-ヒドロキシエチルアクリレート=42/30/28(質量比)を反応させて得られたアクリル系共重合体と、その2-ヒドロキシエチルアクリレートに対して80モル%のメタクリロイルオキシエチルイソシアネート(MOI)とを反応させて、エネルギー線硬化型重合体(Mw:40万)を得た。
ブチルアクリレート/メチルメタクリレート/2-ヒドロキシエチルアクリレート=42/30/28(質量比)を反応させて得られたアクリル系共重合体と、その2-ヒドロキシエチルアクリレートに対して70モル%のメタクリロイルオキシエチルイソシアネート(MOI)とを反応させて、エネルギー線硬化型重合体(Mw:40万)を得た。
ブチルアクリレート/メチルメタクリレート/2-ヒドロキシエチルアクリレート=80/5/15(質量比)を反応させて得られたアクリル系共重合体と、その2-ヒドロキシエチルアクリレートに対して80モル%のメタクリロイルオキシエチルイソシアネート(MOI)とを反応させて、エネルギー線硬化型重合体を得た。このエネルギー線硬化型重合体の重量平均分子量(Mw)は、40万であった。
2-エチルヘキシルアクリレート/酢酸ビニル/2-ヒドロキシエチルアクリレート=60/20/20(質量比)を反応させて得られたアクリル系共重合体と、その2-ヒドロキシエチルアクリレートに対して80モル%のメタクリロイルオキシエチルイソシアネート(MOI)とを反応させて、エネルギー線硬化型重合体(Mw:40万)を得た。
ブチルアクリレート/メチルメタクリレート/2-ヒドロキシエチルアクリレート=62/10/28(質量比)を反応させて得られたアクリル系共重合体と、その2-ヒドロキシエチルアクリレートに対して80モル%のメタクリロイルオキシエチルイソシアネート(MOI)とを反応させて、エネルギー線硬化型重合体(Mw:40万)を得た。
2-エチルヘキシルアクリレート/イソボルニルアクリレート/2-ヒドロキシエチルアクリレート=42/30/28(質量比)を反応させて得られたアクリル系共重合体と、その2-ヒドロキシエチルアクリレートに対して80モル%のメタクリロイルオキシエチルイソシアネート(MOI)とを反応させて、エネルギー線硬化型重合体(Mw:40万)を得た。
実施例および比較例で得られたステルスダイシング用粘着シートの基材における粘着剤層とは反対側の面に、瞬間接着剤(東亜合成社製,製品名「アロンアルファ」)を使用して、裏打ち材としてのポリエチレンテレフタレートフィルム(厚さ:100μm)を接着し、積層体を得た。
実施例および比較例で使用した基材について、下記の装置および条件で0℃における基材の貯蔵弾性率(MPa)を測定した。結果を表1に示す。
測定装置:ティー・エイ・インスツルメント社製,動的弾性率測定装置「DMA Q800」
試験開始温度:0℃
試験終了温度:200℃
昇温速度:3℃/分
周波数:11Hz
振幅:20μm
実施例および比較例で使用した粘着剤組成物を、剥離シートの剥離面に塗布して粘着剤層を形成し、別途用意した剥離シートの剥離面を、露出している粘着剤層に圧着し、剥離シート/粘着剤層/剥離シートからなる粘着シートを作製した。その粘着シートから剥離シートを剥がし、粘着剤層を厚さ200μmになるように複数層積層した。得られた粘着剤層の積層体から、30mm×4mmの矩形(厚さ:200μm)を打ち抜き、これを測定用試料とした。この測定用試料について、下記の装置および条件で0℃における粘着剤層の貯蔵弾性率(MPa)を測定した。結果を表1に示す。
測定装置:ティー・エイ・インスツルメント社製,動的弾性率測定装置「ARES」
測定間距離:20mm
試験開始温度:-30℃
試験終了温度:120℃
昇温速度:3℃/分
周波数:11Hz
振幅:20μm
実施例および比較例で得られたステルスダイシング用粘着シートの粘着剤層に、6インチリングフレームおよび6インチシリコンミラーウエハ(厚さ:150μm)のミラー面を貼付した。次いで、ステルスダイシング装置(ディスコ社製,製品名「DFL7360」)を使用して、以下の条件で、6インチシリコンミラーウエハにおけるステルスダイシング用粘着シートとは反対側の面からレーザを照射して、6インチシリコンミラーウエハ内に改質層を形成した。このときのレーザ照射は、得られるチップのサイズが、それぞれ16mm角、8mm角、4mm角および1mm角となるように、4通りに行った。
<照射の条件>
照射高さ:テープ側から100μm
周波数:90Hz
出力:0.25W
加工速度:360mm/sec
○:上記割合が、100%である。
△:上記割合が、100%未満、80%以上である。
×:上記割合が、80%未満である。
11…基材
12…粘着剤層
13…裏打ち材
2…シリコンミラーウエハ
Claims (7)
- 少なくとも、内部に改質層が形成された半導体ウエハを、-20℃以上、10℃以下の環境下で個々のチップに切断分離するために使用される、ステルスダイシング用粘着シートであって、
基材と、前記基材の一方の面側に積層された粘着剤層とを備え、
前記粘着剤層を介して前記ステルスダイシング用粘着シートをシリコンウエハに貼付した場合における、前記粘着剤層と前記シリコンウエハとの界面の0℃でのせん断力が、190N/(3mm×20mm)以上、400N/(3mm×20mm)以下である
ことを特徴とするステルスダイシング用粘着シート。 - 前記チップは、最小の辺の長さが0.5mm以上、20mm以下であることを特徴とする請求項1に記載のステルスダイシング用粘着シート。
- 前記半導体ウエハは、厚さが10μm以上、1000μm以下であることを特徴とする請求項1または2に記載のステルスダイシング用粘着シート。
- 前記粘着剤層は、エネルギー線硬化性粘着剤から構成されることを特徴とする請求項1~3のいずれか一項に記載のステルスダイシング用粘着シート。
- 前記基材の0℃における貯蔵弾性率は、100MPa以上、1500MPa以下であることを特徴とする請求項1~4のいずれか一項に記載のステルスダイシング用粘着シート。
- 請求項1~5のいずれか一項に記載のステルスダイシング用粘着シートの前記粘着剤層と半導体ウエハとを貼合する貼合工程と、
前記半導体ウエハの内部に改質層を形成する改質層形成工程と、
-20℃以上、10℃以下の環境下で前記ステルスダイシング用粘着シートをエキスパンドして、内部に改質層が形成された前記半導体ウエハを個々のチップに切断分離するクールエキスパンド工程と
を備えたことを特徴とする半導体装置の製造方法。 - 前記ステルスダイシング用粘着シートに貼合された前記半導体ウエハにおける前記ステルスダイシング用粘着シート側とは反対側の面に、接着用フィルムを積層するラミネート工程をさらに備えることを特徴とする請求項6に記載の半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201880044028.1A CN110832620B (zh) | 2017-07-03 | 2018-02-02 | 隐形切割用粘着片及半导体装置的制造方法 |
JP2019528340A JP7062653B2 (ja) | 2017-07-03 | 2018-02-02 | ステルスダイシング用粘着シートおよび半導体装置の製造方法 |
KR1020197030926A KR102560370B1 (ko) | 2017-07-03 | 2018-02-02 | 스텔스 다이싱용 점착 시트 및 반도체 장치의 제조 방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017130299 | 2017-07-03 | ||
JP2017-130299 | 2017-07-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2019008808A1 true WO2019008808A1 (ja) | 2019-01-10 |
Family
ID=64949902
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2018/003592 WO2019008808A1 (ja) | 2017-07-03 | 2018-02-02 | ステルスダイシング用粘着シートおよび半導体装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP7062653B2 (ja) |
KR (1) | KR102560370B1 (ja) |
CN (1) | CN110832620B (ja) |
TW (1) | TWI762576B (ja) |
WO (1) | WO2019008808A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7510283B2 (ja) | 2019-06-13 | 2024-07-03 | 日東電工株式会社 | ダイシングテープ及びダイシングダイボンドフィルム |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013157589A (ja) * | 2012-01-06 | 2013-08-15 | Furukawa Electric Co Ltd:The | ウエハ加工用テープ及びこれを使用した半導体装置の製造方法 |
JP2014509450A (ja) * | 2011-03-08 | 2014-04-17 | エルジー・ハウシス・リミテッド | ウエハ加工フィルム用粘着剤組成物 |
WO2016052444A1 (ja) * | 2014-09-29 | 2016-04-07 | リンテック株式会社 | 半導体ウエハ加工用シート用基材、半導体ウエハ加工用シート、および半導体装置の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4770126B2 (ja) | 2003-06-06 | 2011-09-14 | 日立化成工業株式会社 | 接着シート |
WO2009063825A1 (ja) * | 2007-11-16 | 2009-05-22 | Tokyo Seimitsu Co., Ltd. | ウェーハ処理装置 |
JP4927187B2 (ja) * | 2010-02-19 | 2012-05-09 | 日東電工株式会社 | ダイシング・ダイボンドフィルム |
CN110186835B (zh) * | 2013-03-15 | 2022-05-31 | Gpb科学有限公司 | 颗粒的片上微流体处理 |
WO2015064574A1 (ja) * | 2013-10-30 | 2015-05-07 | リンテック株式会社 | 半導体接合用接着シートおよび半導体装置の製造方法 |
CN110753993B (zh) * | 2017-07-03 | 2023-12-01 | 琳得科株式会社 | 隐形切割用粘着片及半导体装置的制造方法 |
-
2018
- 2018-02-02 KR KR1020197030926A patent/KR102560370B1/ko active IP Right Grant
- 2018-02-02 CN CN201880044028.1A patent/CN110832620B/zh active Active
- 2018-02-02 WO PCT/JP2018/003592 patent/WO2019008808A1/ja active Application Filing
- 2018-02-02 JP JP2019528340A patent/JP7062653B2/ja active Active
- 2018-02-09 TW TW107104714A patent/TWI762576B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014509450A (ja) * | 2011-03-08 | 2014-04-17 | エルジー・ハウシス・リミテッド | ウエハ加工フィルム用粘着剤組成物 |
JP2013157589A (ja) * | 2012-01-06 | 2013-08-15 | Furukawa Electric Co Ltd:The | ウエハ加工用テープ及びこれを使用した半導体装置の製造方法 |
WO2016052444A1 (ja) * | 2014-09-29 | 2016-04-07 | リンテック株式会社 | 半導体ウエハ加工用シート用基材、半導体ウエハ加工用シート、および半導体装置の製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7510283B2 (ja) | 2019-06-13 | 2024-07-03 | 日東電工株式会社 | ダイシングテープ及びダイシングダイボンドフィルム |
Also Published As
Publication number | Publication date |
---|---|
JPWO2019008808A1 (ja) | 2020-05-07 |
KR102560370B1 (ko) | 2023-07-27 |
CN110832620A (zh) | 2020-02-21 |
JP7062653B2 (ja) | 2022-05-06 |
TW201906957A (zh) | 2019-02-16 |
CN110832620B (zh) | 2024-01-02 |
TWI762576B (zh) | 2022-05-01 |
KR20200024126A (ko) | 2020-03-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6875865B2 (ja) | 半導体加工用シートおよび半導体装置の製造方法 | |
JP7062654B2 (ja) | ステルスダイシング用粘着シートおよび半導体装置の製造方法 | |
WO2020195744A1 (ja) | ワーク加工用シート | |
KR102515877B1 (ko) | 워크 가공용 시트 및 가공된 워크의 제조방법 | |
JP6818612B2 (ja) | 半導体加工用シートおよび半導体装置の製造方法 | |
WO2020100491A1 (ja) | ワーク加工用シート | |
JP7062653B2 (ja) | ステルスダイシング用粘着シートおよび半導体装置の製造方法 | |
JP7042271B2 (ja) | ステルスダイシング用粘着シートおよび半導体装置の製造方法 | |
JP6980680B2 (ja) | ステルスダイシング用粘着シート | |
JP7062655B2 (ja) | ステルスダイシング用粘着シートおよび半導体装置の製造方法 | |
JP7176919B2 (ja) | ダイシングダイボンドフィルム | |
WO2020053981A1 (ja) | ワーク加工用シートおよび加工済みワークの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 18827583 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2019528340 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 20197030926 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 18827583 Country of ref document: EP Kind code of ref document: A1 |