WO2018135492A1 - 半導体基板の処理方法及び半導体基板の処理装置 - Google Patents
半導体基板の処理方法及び半導体基板の処理装置 Download PDFInfo
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- WO2018135492A1 WO2018135492A1 PCT/JP2018/001025 JP2018001025W WO2018135492A1 WO 2018135492 A1 WO2018135492 A1 WO 2018135492A1 JP 2018001025 W JP2018001025 W JP 2018001025W WO 2018135492 A1 WO2018135492 A1 WO 2018135492A1
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- curing agent
- semiconductor substrate
- protective film
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- pressing member
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
Definitions
- the present invention relates to a technical field of forming a protective film for protecting one surface side when the other surface side of a semiconductor substrate having a plurality of integrated circuit chips formed on one surface side is cut.
- a plurality of integrated circuits arranged vertically and horizontally are formed by performing processes such as film formation, pattern mask formation, and etching on a semiconductor wafer such as a silicon wafer.
- a protective tape for protecting the integrated circuit chip is applied to the front side of the semiconductor wafer (hereinafter referred to as “wafer”)
- the back side of the wafer is grinded (ground or polished) to obtain the thickness of the wafer. Is reduced, and a dicing tape or a die bonding film, for example, is attached to the back side of the wafer, and each integrated circuit chip is separated by, for example, a dicing saw.
- a so-called half-cut method in which a cut is made along the dicing line from the surface side of the wafer before grinding, or a so-called full after the wafer is attached to the dicing tape.
- a method of cutting, or stealth dicing for forming a tear in the wafer. In either method, the protective tape is peeled off from the wafer before the dicing tape is applied to the wafer.
- the method of attaching the protective tape to the wafer has the following problems.
- the protective tape is interposed between the stage and the wafer, but when the integrated circuit chip includes bumps, the protective tape swells at the portion where the bumps exist when viewed microscopically. .
- the surface of the protective tape undulates and the surface shape is transferred to the back surface of the wafer after grinding, resulting in variations in the thickness dimension of the integrated circuit chip.
- a gap is formed between the protective tape and the wafer at the outer periphery of the wafer, and grinding water enters through this gap to contaminate the integrated circuit chip, and a clearance is generated at the outer periphery of the wafer to protect it during grinding.
- the tape flutters and causes the integrated circuit chip to break. Furthermore, if the surface of the protective tape is uneven at the outer periphery of the wafer, there is a possibility that the wafer cannot be reliably adsorbed to the wafer holding table provided with the vacuum chuck during grinding.
- the protective tape is peeled off automatically, but in order to avoid removing bumps or leaving tape glue residue on the integrated circuit chip, it cannot be peeled off quickly. This is a factor in that high throughput cannot be obtained in the chip manufacturing process. Further, it has been difficult to reliably avoid the removal of bumps and the residue of the tape paste remaining on the integrated circuit chip in the peeling operation of the protective tape.
- Patent Document 1 describes a technique for reducing the adhesiveness by irradiating the protective tape with ultraviolet rays, and then peeling the protective tape from the wafer.
- the protection tape is protected.
- the flatness of the tape is lowered.
- Patent Document 2 in the process of manufacturing a wafer from a single crystal ingot, since the surface of the sliced wafer is wavy, a cured resin is applied to the surface of the wafer before grinding the surface of the wafer. Describes that the surface of the resin cured by press-contacting a flat plate is a flat surface (reference surface).
- the technique of Patent Document 2 differs from the present invention in the stage of the manufacturing process, and the purpose of flattening the surface of the resin is also different.
- JP 2006-269976 A paragraph 0006
- An object of the present invention is to provide a technique capable of flattening the protective film when forming the protective film.
- the present invention relates to a method for processing a semiconductor substrate, Applying a curing agent for a protective film to the one surface side of the semiconductor substrate on which a plurality of integrated circuit chips are formed on one surface side; Next, flattening the surface of the curing agent; Supplying energy to the curing agent to cure the curing agent to form a protective film that is a curing agent layer; Thereafter, the process of reducing the thickness by scraping the other side of the semiconductor substrate, Then, a step of adhering a dicing holder to the other surface side of the semiconductor substrate; And removing the protective film from the semiconductor substrate.
- Another invention relates to an apparatus for processing a semiconductor substrate having a plurality of integrated circuit chips formed on one side thereof.
- a curing agent is applied to one surface side of a semiconductor substrate on which an integrated circuit chip is formed, and the curing agent is cured with a first energy to form a protective film that is a curing agent layer.
- the protective film can be planarized. Therefore, when the thickness of the semiconductor substrate is reduced by reducing the thickness of the other side of the semiconductor substrate in a later step, the other side becomes flat, and variations in the thickness of the integrated circuit chip can be suppressed.
- an integrated circuit chip (not shown) is formed on one surface side of a wafer (semiconductor wafer) W which is a semiconductor substrate, for example, a semiconductor substrate formed on one surface side (front surface side).
- the curing agent 11 is applied, and the curing agent 11 is cured by, for example, irradiating the curing agent 11 with ultraviolet rays (UV) (FIG. 1B).
- a protective film curing agent 12 is applied on one side of the wafer W, that is, on the curing agent 11 (FIG.
- Curing agents 11 and 12 are cured to form a curing agent layer.
- the curing agent is referred to as a curing agent in any state before and after curing, and the reference numerals are also used. The same code is used.
- the surface of the curing agent 12 is pressed by a plate-like pressing member 14 made of, for example, quartz glass to flatten the surface, and then the protective film is applied from above the pressing member 14.
- the curing agent 12 is irradiated with ultraviolet rays.
- the ultraviolet rays pass through the pressing member 14 and reach the curing agent 12 for the protective film, and the curing agent 12 is cured.
- the timing of the start of ultraviolet irradiation may be simultaneous with the time when the pressing member 14 presses the surface of the curing agent 12, or may be before the pressing member 14 presses the surface of the curing agent, The timing may be such that the curing agent 12 is cured and the pressing of the pressing member 14 becomes ineffective.
- the wafer W is reversed (FIG. 2 (f)), and the other surface side (back surface side) of the wafer W is grinded (ground or polished) to obtain the thickness of the wafer W (in detail, details).
- the thickness of the silicon portion is reduced (FIG. 2 (g)).
- the wafer W is turned over, and the other surface of the wafer W is attached to the dicing tape 22, which is a holder attached to one surface of the ring-shaped frame 21 having a larger size than the wafer W.
- the curing agent 11 for peeling is irradiated with a laser beam to alter the curing agent 11, and gas is generated at the time of the alteration, so that the adhesion between the curing agent 11 and one surface of the wafer W is lost.
- the curing agent 11 is lifted from one surface of the wafer W.
- FIG. 3 (i) schematically shows this state. Further, after the surface of the wafer W is washed with a cleaning liquid and dried, as shown in FIG. 3J, the wafer W is divided along a dicing line by a dicing blade 23 which is a cutting mechanism, and the divided integrated circuits are separated. The die 10a including the chip is removed from the dicing tape 22 by the take-out mechanism.
- the peeling curing agent 11 includes a material that is cured by applying energy, for example, a material that is cured by irradiating ultraviolet rays as described above, and a material that generates gas by applying energy different from the energy. And additives such as solvents.
- a material that is cured by applying energy for example, an ultraviolet curable resin such as an acrylic polymer is used.
- the material that generates gas by applying energy different from the energy include a mixture of a light absorber and a thermally decomposable substance. In this case, the light irradiated for generating heat in the light absorber becomes energy for generating gas.
- the light absorber for example, a substance that absorbs laser light in the visible light region and generates heat, such as carbon black, metal powder, metal oxide powder, and the like can be used. Polycarbonate, polyvinyl alcohol, polyester, polyacrylate, etc. can be used. Further, instead of a substance that generates heat by absorbing laser light in the visible light region, a substance that generates heat by absorbing ultraviolet light may be used. In the case where the “light” of the light absorber includes both visible light and ultraviolet light, it can be said that as the light absorbent, a substance that generates heat by absorbing visible light or ultraviolet light can be used.
- the material that generates gas when energy is applied may be a resin that decomposes with the energy of ultraviolet rays to generate gas when irradiated with ultraviolet rays, such as an acrylic resin.
- the curing agent 12 for the protective film a material that is cured by applying energy, for example, an ultraviolet curable resin as described above can be used. Further, as the curing agent 12 for the protective film, a photo-curing resin that is cured by visible light other than ultraviolet rays may be used, or a thermosetting resin may be used.
- a photocurable resin for example, a resin containing a polymerizable monomer such as acrylate and a photo radical initiator such as 1-hydroxy-cyclohexyl-phenyl ketone can be used.
- the thermosetting resin for example, an epoxy resin or a phenol resin can be used.
- the same chemicals may be used, and those having different concentrations when added as a coating liquid by adding a solvent may be used.
- a commercially available drug containing a material that cures when irradiated with ultraviolet rays and a resin that decomposes and generates gas when irradiated with ultraviolet rays is used as both the curing agents 11 and 12.
- curing agent 12 can be mentioned.
- the curing agent 11 for peeling and the curing agent 12 for the protective film have mutually different ultraviolet wavelengths when cured, and different wavelengths when decomposing and generating gas.
- both the curing agents 11, 12, more specifically, the peeling curing agent 11 is cured.
- the protective film is formed by the hardener layer formed by this and the hardener layer formed by hardening the hardener 12 for the protective film, but for the sake of explanation, the hardener 12 for the protective film is hardened.
- the resulting hardener layer is called a protective film.
- the energy for curing the curing agent 12 for the protective film corresponds to the first energy
- the ultraviolet rays for generating gas from the peeling curing agent 11 correspond to the second energy.
- the curing agent 12 for the protective film is applied with a material that cures when irradiated with ultraviolet rays and light.
- a material containing a gas generating material can be used.
- gas is generated from the curing agent 12 to form a gap between the curing agent 12 and the wafer W, as described above.
- the protective film can be removed.
- a method of removing the protective film a method of applying energy such as laser light or ultraviolet light to one side of the wafer W, for example, the curing agent 11 for peeling (a curing agent for the protective film if the peeling curing agent 11 is not used).
- the method is not limited to the above, and a solvent may be supplied to one side of the wafer W to dissolve, for example, the curing agent 11 for peeling and the curing agent 12 for the protective film.
- the pressing member 14 can be made of a material that transmits ultraviolet rays having a wavelength for curing the curing agent 12 for the protective film, such as glass. Quartz glass can be used as the glass, but other glass may be used.
- the protective film curing agent 12 is a light transmissive curing agent
- the pressing member 14 may be made of a material that transmits light, for example, glass such as quartz glass.
- the method of irradiating the protective film curing agent 12 with ultraviolet light or laser light having a wavelength in the visible light range is not limited to being transmitted through the pressing member 14, for example, a wafer W is placed thereon.
- the stage serving as the mounting portion may be made of quartz glass, and the wafer W may be irradiated from the lower side of the stage through the stage.
- ultraviolet rays or light reaches the front surface from the back surface of the wafer W and is irradiated on the front surface side (one surface side).
- the surface of the protective film curing agent 12 is pressed by the pressing member 14 and then flattened even after the pressing member 14 is separated from the curing agent 12, the surface is cured in this state.
- the agent 12 may be irradiated with ultraviolet rays.
- the stage on which the wafer W coated with the protective film curing agent 12 is placed is heated by, for example, a heater provided in the stage. Alternatively, it may be heated from above the wafer W or from below the stage by a lamp such as an infrared lamp.
- the release agent 13 is applied to the surface of the protective film curing agent 12, but the release agent 13 may be applied to the pressing surface side of the pressing member 14.
- a technique for applying the release agent 13 to the surface of the protective film curing agent 12 for example, a technique of applying the protective film curing agent 12 on the wafer W can be employed. . After grinding and polishing the back side (the other side) of the wafer W to reduce the thickness, that is, after thinning (FIG. 2 (g)), if the wafer W is too thin and difficult to transport, It is preferable that a transfer support member, for example, a plate-like support member, is attached to the surface of the protective film of the wafer W by attachment or detachment.
- a commercially available plate-like electrostatic chuck member may be used as described in detail later, or a plate-like body having a vacuum suction function (vacuum chuck function) may be used.
- vacuum suction since the suction path member is necessary, there is an advantage that the electrostatic chuck member can be simplified.
- a plate-like pressing member 14 for example, a glass plate may be used. In this case, a method of adhering the glass plate to the surface of the protective film made of the curing agent 12 is exemplified. Note that whether or not to use a support member for transport can be determined according to the thickness of the protective film, but the present invention is not limited to using a support member for transport. .
- the glass sheet is used as a support member. Can do.
- the surface of the curing agent 12 is bonded to the surface by, for example, ultraviolet irradiation. Can be applied, and a glass plate can be attached to the surface of the curing agent 12 via the adhesive (adhesive).
- the transfer support member is removed after the wafer W is attached to the dicing tape 22.
- an electrostatic attraction member as a supporting member for transport, it can be removed by grounding the electrode of the electrostatic attraction member, and when using a plate having a vacuum attraction function, suction is performed. Just stop.
- a pressing member 14 such as a glass plate is used as a support member for conveyance
- the pressing member 14 is removed from the wafer W by, for example, irradiating ultraviolet rays in order to reduce the adhesive strength of the adhesive.
- the peeling curing agent 11 is used, the peeling curing agent 11 is irradiated with, for example, a laser beam through the glass plate as the pressing member 14 as described above, and then the pressing member 14 is applied to the wafer W.
- the pressing member 14 and the protective film curing agent 12 are removed from the surface of the wafer W by being lifted relatively.
- the curing member 12 is altered by adhering the pressing member 14 to the curing agent 12 with an adhesive different from the curing agent 12 for the protective film.
- the pressing member 14 and the curing agent 12 can be integrally removed from the wafer W.
- the protective film curing agent 12 adhered or adhered to the pressing member 14 can be reused by removing it with a solvent and washing it, for example.
- the step of flattening the curing agent 12 for the protective film is performed using the pressing member 14, but the flattening step is performed by CMP (Science) after the curing agent 12 for the protective film is cured. Or mechanical polishing). Since the present invention uses a coating film instead of a tape as a protective film, it utilizes CMP (a treatment that increases the mechanical polishing action by a chemical reaction between a chemical component of an abrasive or a polishing liquid and an object to be processed). Thus, the surface of the protective film can be flattened.
- the wafer W attached to the dicing tape 22 is cut from one surface side to the other surface side in the example of FIG.
- it is not limited to such a so-called full-cut method, and a so-called cut is made in advance from the surface side (one surface side) of the wafer W to the middle of the thickness before the state shown in FIG.
- a half cut method may be used.
- the back side of the wafer W is thinned by a grinder, it is divided into integrated circuit chips 10 (there is no separation because a protective film (curing agent 12) is attached).
- An example will be shown in a later embodiment.
- stealth dicing is performed from the back surface side of the wafer W (with the laser focused on the inside of the wafer W and cracked inside). You may make it perform the cut to form.
- FIG. 4 to 8 show a first embodiment of a series of processes performed on the wafer W on which no bumps are formed on the surface.
- 4A shows a state in which the integrated circuit chip 10 is formed on the surface of the wafer W.
- FIG. 4 (b) to 4 (d) show a step of applying a peeling curing agent 11 to the wafer W, a step of curing the curing agent 11 by irradiation of ultraviolet rays, and a protection on the curing agent 11.
- membranes is shown.
- the peeling curing agent 11 that is a coating liquid is, for example, a material that is cured by irradiating ultraviolet rays as described above, such as an acrylic polymer, and a material that absorbs laser light to generate gas, such as a light absorber. And a mixture of a thermally decomposable substance and a solvent. After applying the peeling curing agent 11, the wafer W may be heated in order to volatilize the solvent before irradiating the coating film with ultraviolet rays.
- the peeling curing agent 11 has, for example, a thickness of 5 ⁇ m or less.
- an ultraviolet curable curing agent such as an acrylic polymer is used, and the thickness is, for example, 50 to 100 ⁇ m.
- the wafer W coated with the protective film curing agent 12 is pressed by a pressing member 14 made of, for example, a glass plate having a flat pressing surface, and the surface of the curing agent 12 is flattened. Then, the curing agent 12 is cured by irradiating with ultraviolet rays, and a protective film as a cured layer is formed (FIG. 5E).
- a pressing member 14 made of, for example, a glass plate having a flat pressing surface
- the surface of the curing agent 12 is flattened.
- the curing agent 12 is cured by irradiating with ultraviolet rays, and a protective film as a cured layer is formed (FIG. 5E).
- a mold release agent to the surface of the hardening
- a plate-like body (hereinafter referred to as an ESC plate) 15 having an electrostatic chuck function as a support for transportation is attached to the surface of the curing agent 12 (protective film) for the protective film (FIG. 5 (f)).
- the ESC plate 15 will be described with reference to FIG.
- the ESC plate 15 is formed by laminating a wiring layer 152, an insulating layer 153, a wiring layer 154, and an insulating layer 155 in this order on one surface side of an insulating plate-like body, for example, a glass plate 151, and the wiring layers 152 and 154 are common. Are connected to the other wiring layer 156 and routed to the other surface side of the glass plate 151.
- the power supply port is provided on the other surface side of the ESC plate 15, and by applying a DC voltage to the power supply port, an electrostatic adsorption force acts on one surface side of the ESC plate 15 and is adsorbed to the insulator. To do.
- the other side of the ESC plate 15 is formed in the same manner as the one side except that the insulating layer 155 is not formed in order to prevent warping.
- the thickness of the ESC plate 15 is, for example, 500 ⁇ m to 1 mm.
- FIG. 5G shows a state in which the laser beam 31 is irradiated from the back side of the wafer W, a focal point is formed in the silicon layer, and a crack 32 is generated inside. The position of the focal point moves along a position corresponding to the dicing line of the wafer W.
- the ESC plate 15 is removed from the wafer W (FIG. 5 (h)), and the back surface of the wafer W is ground and polished (back-ground) to be thinned (FIG. 6 (i)).
- the ESC plate 15 is removed by connecting a power feeding port provided on the ESC plate 15 to the ground.
- the ESC plate 15 serving as a support for transport is attached to the wafer W. If the wafer W is warped, there is a concern that the focus cannot be accurately adjusted to a predetermined position. In addition, since the wafer W after stealth dicing has a processing strain inside, the risk of cracking of the wafer W when it is transferred to the back grinding apparatus after stealth dicing is reduced.
- the ESC plate 15 is again attached to the surface of the thinned wafer W (the surface of the protective film) (FIG. 6 (j)), and the DAF (die attach film) 16 that is a liquid is attached to the back surface (other surface) of the wafer W. (FIG. 6 (k)) and the wafer W is heated to cure the DAF 16 to form an adhesive (FIG. 6 (l)).
- the ESC plate 15 is attached to the wafer W for the reasons described above until the wafer W is delivered to, for example, the suction arm in the back grinding apparatus, and the wafer W is transferred from the suction arm to the back grinding stage.
- the ESC plate 15 is removed from the wafer W, and after the back surface of the wafer W is ground and polished, the ESC plate 15 is attached.
- the reason why the ESC plate 15 is removed when the back surface of the wafer W is ground and polished in this way is that the parallelism of both surfaces of the currently commercially available ESC plate 15 is not necessarily high. Therefore, if the parallelism of both surfaces of the ESC plate 15 satisfies the standard for the flatness of the back surface of the wafer W, the back surface of the wafer W may be ground and polished while the ESC plate 15 is attached.
- the wafer W is bonded to the dicing tape 22 which is a holder attached to the ring-shaped frame 21 by the DAF 16 (FIG. 7 (m)), and the ESC plate 15 is removed (FIG. 7 (n)).
- laser light is irradiated on one surface side of the wafer W to generate gas from the peeling curing agent 11, and the protective film curing agent 12 is peeled from the surface of the wafer W (FIG. 8 (o)).
- the peeled curing agent 12 for the protective film has a suction pad (not shown) adsorbed on the surface thereof, and is lifted and removed from the surface of the wafer W (FIG. 8 (p)).
- a cleaning liquid is sprayed on the surface of W to clean the surface. Thereafter, for example, by applying a tensile force (tensile force) to the dicing tape 22, the dicing tape 22 is separated into a plurality of dies including each integrated circuit chip 10.
- a tensile force tensile force
- the curing agent 11 for peeling and the curing agent 12 for the protective film are sequentially applied and cured on the front surface side (one surface side) of the wafer W on which the integrated circuit chip 10 is formed.
- a protective film is formed.
- it can be flattened by pressing with the pressing member 14 before the curing agent 12 is cured. Therefore, when the back surface side (other surface side) of the wafer W is shaved in a subsequent process to reduce the thickness, the other surface side becomes flat, and variations in the thickness of the integrated circuit chip 10 are suppressed.
- the gas is generated from the curing agent 11 for peeling by irradiating the back side of the wafer W with laser light, the protective film can be easily removed from the wafer W.
- FIGS. 9 to 12 are diagrams showing steps of the second embodiment performed by the apparatus of the present invention.
- the second embodiment shows an example of a series of processes performed when the bumps 31 are formed on the wafer W.
- the protective film curing agent 12 is applied twice. That is, as shown in FIGS. 9 (c) and 9 (d), a protective film curing agent 12 is applied on the peeling curing agent 11 and cured by ultraviolet irradiation, and then the curing agent 12 is coated on the curing agent 12. Further, a curing agent 12 is applied (FIG. 10E). Thereafter, the surface of the curing agent 12 is pressed and flattened by a pressing member 14 made of a quartz glass plate, and then the curing agent 12 is cured by ultraviolet irradiation.
- the ESC plate 15 is attached to the wafer W, stealth dicing is performed, and the ESC plate 15 is removed from the wafer W. Although removed, since the stealth dicing is not performed in the second embodiment, these steps are not performed. Except for the above points, the second embodiment performs the same steps as the first embodiment.
- FIG. 13 to 17 are views showing a third embodiment of the steps performed by the apparatus of the present invention.
- the third embodiment is an example of a technique for isolating TSV (Through-Silicon Via) in which connection wiring extends perpendicularly to the integrated circuit chip.
- reference numeral 34 denotes a connection wiring.
- the back surface of the wafer W is polished by CMP (FIG. 14G), washed (FIG. 14H), and etched to expose the tip of the connection wiring 34 (FIG. 15I).
- Etching may be dry etching using an etching gas or wet etching using an etching solution, and then an insulating film 35 is formed on the back surface of the wafer W by, for example, CVD in a vacuum atmosphere.
- the tip of the connection wiring 34 is buried in the insulating film 35 (FIG. 15 (j)), and then polished by CMP to expose the tip of the wiring 34 (FIG. 15 (k)).
- a bump 36 is attached to the tip of the substrate (FIG. 15L).
- FIG. 19 and 20 are views showing a fourth embodiment of the steps performed by the apparatus of the present invention.
- the fourth embodiment is an example in which a pressing member for pressing the protective film curing agent 12 also serves as a transport support.
- FIG. 19A shows a state in which the curing agent 11 for the protective film is applied after curing the curing agent 11 for peeling as in the embodiment described above.
- an adhesive that is cured by ultraviolet rays for example, is used as the curing agent 12 for the protective film.
- the pressing member 14 a quartz glass plate having a high degree of parallelism on both sides is used.
- the pressing member 14 presses and flattens the surface of the curing agent 12 and hardens the curing agent (adhesive) 12. Is irradiated onto one surface side of the wafer W from above the pressing member 14, and the pressing member 14 is adhered to the curing agent 12 in a state where the surface of the curing agent 12 is flattened (FIG. 19B). ).
- the pressing member 14 serves as a support for transporting the wafer W, and the wafer W is transported to the back grinding apparatus and reversed, and the back surface is ground and polished (thinned). (FIG. 19C).
- a dicing tape is attached to the back surface side of the wafer W (FIG. 20D), and laser light is irradiated to the front surface side of the wafer W to remove the curing agent 11 for peeling. From this, gas is generated and the curing agent 12 for the protective film floats from the surface of the wafer W (not shown). Thereafter, by raising the pressing member 14, the protective film is pulled up while being adhered to the pressing member 14, and is removed from the wafer W (FIG. 20E).
- an ultraviolet curing type curing agent 12 is used as the protective film curing agent 12, but a curing agent that cures by heat or light (visible light) may be used.
- the quartz glass plate as the pressing member 14 is adhered to the curing agent 12 by the curing agent 12 for the protective film, but when a non-adhesive material is used as the curing agent 12, the pressing surface of the pressing member 14 is used.
- an adhesive for example, an adhesive that is cured by ultraviolet rays, heat, or light may be applied in advance.
- the curing agent 12 may be cured first, and then the adhesive may be cured.
- the said adhesive agent also becomes a part of protective film.
- the pressing member 14 is used as a support for transport, compared to a case where the flattening step of the curing agent 12 and the mounting step of the support for transport are performed separately.
- the process can be simplified.
- the quartz glass is not limited to being used as a pressing member or a carrier support as in this example, but after the step of pressing, curing and flattening the curing agent 12 for the protective film, the quartz glass or other Alternatively, the quartz glass may be attached to the surface of the curing agent 12, and the quartz glass may be used as a support for transportation.
- the semiconductor substrate processing apparatus shown in FIG. 21 to FIG. 23 is configured so that, for example, the processes described in the first embodiment, the second embodiment, and the third embodiment described above can be performed.
- the semiconductor substrate processing apparatus includes a loading / unloading block S1 for loading / unloading a wafer W as a semiconductor substrate to / from the outside, a relay block S2 arranged in order on the back side as viewed from the loading / unloading block S1, and a second block S2. 1 processing block S3, second processing block S4, and grinding apparatus G.
- Each of the blocks S1 to S4 is composed of a structure that can be connected to and separated from each other, for example.
- the loading / unloading block S1 includes, for example, a stage 41 on which a plurality of (for example, three) carriers C, which are transfer containers for storing and transferring a plurality of wafers W, are placed in the horizontal direction (X direction), and the stage 41. And a transfer mechanism 42 that is a transfer arm for transferring the wafer W to and from the carrier C placed thereon.
- the delivery mechanism 42 is configured such that the holding portion of the wafer W can move forward and backward, move in the X direction, rotate around the vertical axis, and move up and down.
- the wafer W transferred by the carrier C has a plurality of integrated circuit chips arranged vertically and horizontally on the surface side.
- the first processing block S3 has a two-story structure in which processing blocks B1 and B2 are stacked one above the other.
- the wafer W is ground and polished by a grinding apparatus G ( A module for carrying out the process before the backgrinding is performed is arranged.
- the second floor block B2 a module for performing a process after the back grinding is performed on the wafer W is arranged.
- the first floor and the second floor blocks B1 and B2 have main transport mechanisms 50 and 60 that are movable along transport paths 50a and 60a made of, for example, guide rails that extend in the front-rear direction (Y direction) when viewed from the carry-in / out block S1. It has.
- the main transfer mechanisms 50 and 60 are configured such that the holding portion of the wafer W can move forward and backward, can rotate around the vertical axis, and can move up and down.
- the relay block S2 transfers the wafer W taken out from the carrier C in the loading / unloading block S1 to the first floor block B1, and receives the wafer W that has been processed in the second floor block B2 to the transfer mechanism 42 of the loading / unloading block S1.
- the relay block S2 includes a transfer shelf 43 in which a plurality of mounting tables for wafers W are arranged in the vertical direction, and a first transfer mechanism that can move up and down for transferring the wafer W between the mounting tables of the transfer shelf 43. 44.
- the wafer W is loaded at a height position where the main transfer mechanisms 50, 60 can transfer the wafer W and at a height position where the transfer mechanism 42 can transfer the wafer W.
- a stand is arranged.
- the wafer W before processing is transferred by the path of the transfer mechanism 42-> transfer shelf 43-> first transfer mechanism 44-> transfer shelf 43-> main transfer mechanism 50 of the first floor block B2, and the processed wafer W is It is delivered by the route of the main transport mechanism 60 of the second floor block B 2 ⁇ the delivery shelf 43 ⁇ the first transfer mechanism 44 ⁇ the delivery shelf 43 ⁇ the delivery mechanism 42.
- modules for performing processing on the wafer W are disposed on the left and right sides of the transfer paths 51 and 61 of the main transfer mechanisms 50 and 60, respectively.
- a coating module 51 which is a coating unit for coating the curing agent 11 for peeling, for example, 2 for coating the protective film curing agent 12 is used.
- Application modules 52 and 53 which are application parts of a table are provided.
- an ultraviolet module 54 for irradiating ultraviolet rays which corresponds to a curing processing unit for curing the peeling curing agent 11, and the protective film curing agent 12 as in the second embodiment are applied twice.
- a flattening module 56 that serves both as a curing processing unit and a flattening processing unit (specifically, sharing a mounting table) is provided, which irradiates ultraviolet rays for curing the curing agent 12.
- a coating module 61 which is a coating unit for coating DAF, a module 62 for attaching a dicing tape, and a wafer W
- a cleaning module 63 which is a cleaning unit for cleaning the surface.
- a heating module 64 that is a heating unit for heating and curing the DAF
- a protective film peeling module 66 is provided as a protective film removing unit for irradiating the protective film with laser light to peel the protective film.
- the second processing block S4 includes a delivery shelf 71 in which a plurality of mounting tables for wafers W are vertically arranged, a second transfer mechanism 72, a stealth dicing (SD) module 73, and an ESC plate 15 for the wafer. And a module 65 for attaching and detaching.
- a delivery shelf 71 a plurality of mounting tables for wafers W are arranged in the vertical direction, a height position where the main transfer mechanisms 50 and 60 can deliver the wafers W, and the delivery mechanism 42 can deliver the wafers.
- a mounting table for the wafer W is disposed at the height position.
- the second transfer mechanism 72 transfers the wafer W so that the wafer is transferred among the mounting tables of the delivery shelf 71, the SD module 73, the module 65 for attaching / detaching the ESC plate 15, and the grinding apparatus G.
- the holding portion is configured to be movable back and forth, rotatable about a vertical axis, and movable up and down.
- each module As the coating modules 51 to 53, 61, for example, the apparatus shown in FIG. 24 can be used.
- 101 is a vacuum chuck 101 that sucks and holds the wafer W and can be rotated and raised / lowered by the drive mechanism 100
- 102 is a cup module
- 103 has a cylindrical outer peripheral wall and an inner peripheral wall extending downward.
- Reference numeral 104 denotes a discharge space formed between the outer cup 105 and the outer peripheral wall so that exhaust and drainage can be performed over the entire circumference, and the lower side of the discharge space 104 can be separated into gas and liquid. It has become.
- the liquid is supplied from the liquid supply source 107 to the central portion of the wafer W through the nozzle 106, and the wafer W is rotated at a predetermined rotational speed, for example, so that the curing agent or DAF liquid is spread on the surface of the wafer W. Thus, a coating film is formed.
- the method of applying these liquids to the wafer W is not limited to the so-called spin coating as described above.
- a nozzle having a length corresponding to the diameter of the wafer W is used, and the nozzle is set in the nozzle length direction.
- a technique may be used in which coating is performed by discharging a coating liquid onto the surface of the wafer W while moving in the orthogonal direction.
- the ultraviolet modules 54 and 55 are configured to irradiate the wafer W with ultraviolet rays having a wavelength for curing the curing agent 11 for peeling and ultraviolet rays having a wavelength for curing the curing agent 12 for the protective film, respectively.
- the flattening module 56 adsorbs the upper surface of the mounting table 561 for mounting the wafer and the plate-like pressing member 14, for example, quartz glass, so that the surface of the wafer W on the mounting table 561 is absorbed.
- An operating mechanism 562 that is movable between a pressing position to be pressed and a standby position that is laterally separated from the mounting table 561 and that can be moved forward and backward is provided.
- Reference numeral 560 denotes an adsorption portion.
- an ultraviolet irradiation unit 564 including an ultraviolet lamp corresponding to a mechanism for irradiating ultraviolet rays, which is disposed in the lamp house 563, is disposed.
- Reference numeral 565 denotes a casing, and 566 denotes an ultraviolet ray transmitting window.
- three elevating pins for transferring the wafer W to and from the main transfer mechanism 50 are buried in the mounting table 561.
- the wavelength of the ultraviolet rays irradiated from the ultraviolet irradiation unit 564 is set to a wavelength for curing the curing agent 12 for the protective film.
- the module 74 provided in the second processing block S4, which corresponds to the attachment portion of the carrier for attaching and detaching the ESC plate 15, is provided in the housing 740.
- a mounting table 741 for mounting the plate 15 and a shelf 742 provided above the mounting table 741 and capable of storing a plurality of ESC plates 15 are provided.
- the module 74 for attaching / detaching the ESC plate includes the wafer W and the ESC plate 15 placed in this order from the bottom on the mounting table 741, and the ESC plate 15 and the wafer W on the mounting table 741 in this order from the bottom.
- the ESC plate 15 is configured to be detachable in any of the mounted states.
- the ESC plate 15 is taken out of the shelf 742 by the second transfer mechanism 72, and the upper side of the mounting table 741. Then, it is transferred to a suction unit (not shown) that can be moved up and down, and the suction unit is lowered to stack the ESC plate 15 on the wafer W. Next, a DC voltage is applied to the power supply port on the upper surface of the ESC plate 15 by a power supply / discharge mechanism (not shown), and the ESC plate 15 is adsorbed on the wafer W.
- the ESC plate 15 When the ESC plate 15 is stacked on the lower side of the wafer W, power supply or discharge is performed on the power supply port on the lower surface of the ESC plate 15 by a power supply / discharge mechanism provided on the mounting table 741.
- the wafer W stacked on the plate 15 can be attracted and desorbed.
- three elevating pins are buried so that the wafer W or the ESC plate 15 can be delivered to the second transfer machine school 72.
- the ESC plate attaching / detaching module 65 provided in the second floor processing block B2 is configured in the same manner, and the ESC plate 15 is removed from the wafer W by the reverse operation of the ESC plate 15 attachment described above.
- the ESC plate 15 removed from the wafer W by the module 65 can be returned to the module 74 and reused after the processing of one lot of the wafer W is completed and before the processing of another lot is started. preferable.
- the heating module 64 for example, a module that is heated by a heater and includes a heating plate on which the wafer W is placed can be used.
- a module for attaching the dicing tape a known apparatus can be used. However, this module may be provided outside the apparatus without being provided in the semiconductor substrate processing apparatus. However, from the viewpoint of obtaining a high throughput by reducing the transfer process of the wafer W, it is preferable to provide the module in the processing apparatus.
- the protective film peeling module 66 includes a mounting table 661 provided in a housing 660 on which the wafer W to which the dicing tape 22 is attached is mounted. Further, the module 66 adsorbs the adsorbing member 662 adsorbing on the surface of the protective film (the surface of the curing agent 12) formed on the surface of the wafer W on the mounting table 661 and the adsorbing member 662 to the surface of the wafer W.
- An actuating mechanism 664 for moving between the position and a position above the disposal container 663 for discarding the protective film.
- the suction member 662 is a plate-like body formed in the same size as the wafer W.
- a laser beam irradiation unit 665 for irradiating a laser beam for generating a gas by modifying the peeling curing agent 11 as described above is provided above the mounting table 661.
- the laser beam irradiation unit 665 is formed to have a length that can cover the diameter of the wafer W.
- the laser beam irradiation unit 665 is moved in a direction orthogonal to the length direction of the laser beam irradiation unit 665 to scan the wafer W, thereby scanning the wafer W. It is comprised so that a laser beam can be irradiated to the whole surface.
- the laser light irradiation unit 665 corresponds to a mechanism for irradiating laser light, which is a mechanism for altering the curing agent 11 for peeling.
- the cleaning module provided in the second floor processing block B2 is for cleaning the surface of the wafer W after the protective film is peeled off.
- the wafer W is inverted, that is, the surface side is facing downward.
- the cleaning liquid for example, pure water, is discharged from the cleaning liquid nozzle provided below the wafer W onto the surface of the wafer W to clean the surface.
- the cleaning liquid nozzle is formed to have a length corresponding to the diameter of the wafer W, for example, and is configured to discharge the cleaning liquid while moving in a direction orthogonal to the length direction of the cleaning liquid nozzle. Further, a similar nozzle for blowing a drying gas onto the surface of the wafer W is provided, and the gas is blown onto the surface of the wafer W after cleaning with the cleaning liquid.
- the wafer W is coated with the coating module 51 ⁇ the ultraviolet module 54 ⁇ the coating module 52 ⁇ the planarization module 56 ⁇ the ESC plate.
- Detachable module 74 ⁇ Stealth dicing (SD) device 73 ⁇ ESC plate attaching / detaching module 74 ⁇ Grinding device G ⁇ ESC plate attaching / detaching module 74 ⁇ Coating module 61 ⁇ Heating module 64 ⁇ Dicing tape attaching module 62 ⁇ ESC It flows in the order of the module 65 for attaching / detaching the plate ⁇ the module 66 for removing the protective film ⁇ the cleaning module 63 ⁇ the carrier C.
- the wafer W after being cleaned is, for example, spread on the dicing tape 22 on the outside and separated into each die.
- the wafer W is coated twice with the curing agent for the protective film, so that the coating module 51 ⁇ the ultraviolet module 54 ⁇ the coating module 52 ⁇ the ultraviolet module 55. ⁇ The application module 53 ⁇ the planarization module 56 are flowed in this order. Subsequently, the wafer W flows in the order of the grinding apparatus G ⁇ the module 74 for attaching / detaching the ESC plate ⁇ the coating module 61, and thereafter flows in the same manner as in the process of the first embodiment.
- the wafer W is subjected to the second embodiment until the ESC plate 15 is attached by the ESC plate attaching / detaching module 74 after back grinding. This is the same as the case of performing the process. Thereafter, the wafer W is returned to the carrier C, and a series of steps from the step of performing CMP shown in FIG. 14G to the step of attaching bumps shown in FIG. Thereafter, the wafer W is loaded again into the semiconductor substrate processing apparatus, and the stealth dicing device 73 ⁇ the dicing tape attaching module 62 ⁇ the ESC plate attaching / detaching module 65 ⁇ the protective film removing module 66 ⁇ the cleaning module 63 ⁇ the carrier C. It will flow in the order.
- reference numeral 200 denotes a control unit, which stores a transfer recipe that determines in which order the wafer W is transferred to the module group, and a process recipe that is a procedure of processes performed in each module. It has.
- the control unit 200 includes a selection unit that selects a wafer transfer recipe according to the type of the wafer W in the loaded carrier C. For example, when the type of wafer is sent from the apparatus of the previous process, the selection unit reads information that associates the type of wafer with the transfer recipe and the processing recipe from the storage unit, and sets these recipes.
- a release agent may be interposed between the surface of the curing agent 12 and the pressing member 14.
- an application module that is a release agent application unit for applying the release agent in a mist form is provided.
- a module for coating the curing agent 12 can be used. After the curing agent 12 is coated on the wafer W, a release agent is subsequently supplied from above the wafer W by mist, and then the wafer.
- the example which conveys W to the planarization module 56 is given. Moreover, you may make it apply
- the curing agents 11 and 12 are not limited to ultraviolet curing type curing agents, and light (visible light) curing type or heat curing type curing agents can be used.
- the planarizing module 56 uses ultraviolet rays.
- a mechanism for irradiating laser light or a heating mechanism such as a heater for heating the mounting table 561 is provided instead of the mechanism for irradiating.
- the module for flattening the curing agent 12 for the protective film and the module for curing the curing agent 12 are shared, but these modules may be configured as separate modules.
- a flattening processing unit that presses and flattens the curing agent 12 for the protective film by the pressing member 14 and a curing processing unit that cures the flattened curing agent 12 are configured as separate modules. Will be.
- the module for peeling off the protective film the film contacting the 66 wafer W, in this example, the mechanism for altering the curing agent 12 for peeling, the ultraviolet irradiation mechanism when the curing agent 12 is altered by ultraviolet rays.
- a heating mechanism such as a heater for heating the mounting table 661 is used.
- the mechanism for altering the curing agent 12 includes a mechanism that relatively applies a physical peeling force to the protective film in a direction away from the wafer W, such as a mechanism that pulls up the adsorption member that is adsorbed on the entire surface of the protective film. Also good.
- the module for irradiating the surface of the wafer W with a laser beam to alter the curing agent 11 for peeling and the module for removing the protective film from the wafer W are not limited to being shared, and are configured as separate modules. May be.
- the protective film removing unit is configured by these modules.
- the protective film removing unit may be configured to remove the curing agent 11 for peeling and the curing agent 12 for the protective film with a solvent, and in this case, the wafer W is arranged so that the surface side faces downward.
- a mechanism for supplying a solvent to the surface of the wafer W from the lower side can be used.
- the steps of the third embodiment are not performed in the semiconductor substrate processing apparatus, but are performed externally.
- a necessary apparatus is incorporated in the semiconductor substrate processing apparatus or connected to the processing apparatus. Then, the wafer W taken out from the carrier, that is, the carrier C may be returned to the carrier C after a series of processes.
- This processing apparatus differs from the above-described apparatus shown in FIG. 21 and the like in that a flattening module is configured so that a quartz glass plate used as the pressing member 14 can be used as a support for conveyance, and a protective film
- the protective film peeling module is configured so that the protective film is peeled off together with the pressing member 14 when peeling the wafer W from the wafer W, and the ESC attaching / detaching modules 74 and 65 are not used.
- the apparatus shown in FIG. 21 and the like is used as the curing agent 12 for the protective film, which is cured while being adhered to the pressing member 14 when irradiated with ultraviolet rays.
- the flattening module 57 is provided in the housing 570 as shown in FIG. 30, is provided with a mounting table 571 for mounting the wafer W, and is provided laterally away from the mounting table 571, and a plurality of pressing members 14 are provided.
- a shelf 572 for storing, and a transfer mechanism 573 disposed between the mounting table 571 and the shelf 572 for transferring the pressing member are provided.
- the transfer mechanism 573 is configured so that the pressing member 14 can be sucked and held by the suction portion 574. Further, the transfer mechanism 573 is capable of moving back and forth vertically so that the pressing member 14 can be taken out from the shelf 572 and transferred onto the wafer W on the mounting table 571 to press the curing agent 12 on the surface of the wafer W. It can be rotated around and raised and lowered.
- the flattening module 57 includes an ultraviolet irradiation unit 564 and the like, similar to the flattening module 56 of FIG. 25 described above.
- the module 57 for peeling off the protective film has substantially the same configuration as the module 56 shown in FIG. 27, but the adsorbing member 662 is adsorbed on the surface of the pressing member 14 and removes the curing agent 12 together with the pressing member 14 from the wafer W. It is different from performing (peeling) and providing a shelf for storing the pressing member 14 instead of the disposal container 663.
- the pressing member 14 removed from the wafer W by the protective film peeling module 57 and stored in the shelf is, for example, after the processing of one lot of the wafer W is completed and before the processing of another lot is started. It is preferable to wash with a solvent, transport to a shelf 572 in the flattening module 57, and reuse it.
- the pressing member 14 can be carried into the coating module 61 by, for example, the main transport mechanism 60 and the solvent can be supplied to the pressing surface to dissolve and remove the curing agents 11 and 12.
- the module for supplying the solvent may be another coating module 51 to 53 or a dedicated coating module provided separately.
- the wafer flow is different from the apparatus shown in FIGS. 21 and 22 in that the wafer W is protected after the protective film curing agent 12 on the surface of the wafer W is cured. It is conveyed with the pressing member 14 until it reaches the film peeling module, and there is no attachment / detachment step of the ESC plate 15.
- the wafer W may be transported between a series of modules without using a transport support such as the ESC plate 15 or the pressing member 14. . And it may be configured so that the support for transport cannot be used (eg, no module for attaching / detaching the ESC plate is provided), but the mode using the support for transport and the mode not using it can be selected. Also good.
- the control unit can select a selection unit that can select a mode in which the ESC plate attaching / detaching modules 74 and 65 are used and a mode in which the ESC plate is not used depending on the type of the wafer W. 200.
- a curing agent 12 for the protective film as the curing agent 12 for the protective film, a curing agent of a type to which the pressing member 14 can be bonded and a curing agent of a type to which the pressing member 14 cannot be bonded are applied. It is also possible to prepare them only for use according to a control signal from the control unit 200.
- the disposal container 663 shown in FIG. 27 may be provided as the protective film peeling module 67 in addition to the shelf for storing the pressing member 14.
- the flattening processing unit is configured to flatten the protective film curing agent 12 by the pressing member 14, but after the curing agent 12 is cured, it may be planarized by CMP processing. In this case, a CMP module is used.
- a device for performing half-cutting may be incorporated in the processing apparatus for the semiconductor substrate.
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Abstract
Description
グラインドを行う時に保護テープはステージとウエハとの間に介在することになるが、集積回路チップにバンプが含まれている場合には、ミクロ的に見るとバンプが存在する部位において保護テープが膨らむ。このため保護テープの表面がうねってしまい、当該表面形状がグラインド後のウエハの裏面に転写され、結果として集積回路チップの厚さ寸法にばらつきが生じる。更にウエハの外周部にて保護テープとウエハとの間に隙間が生じ、この隙間から研削水が侵入して集積回路チップが汚れるし、ウエハの外周部に隙間が生じたことにより研削中に保護テープがバタついて集積回路チップが割れる要因になる。更にまたウエハの外周部にて保護テープの表面に凹凸が生じていると、グラインド時に、バキュームチャックを備えたウエハ保持テーブルに確実にウエハを吸着できないおそれがある。
そして保護テープの剥離作業は自動で行われるが、バンプが取れたり、テープ糊の残渣が集積回路チップに残ってしまうことを避けるためには、速やかに剥離することができず、このため集積回路チップの製造工程において高いスループットが得られない要因になっている。また保護テープの剥離作業において、バンプが取れたり、テープ糊の残渣が集積回路チップに残ってしまうことを確実に避けることは難しかった。
一面側に複数の集積回路チップが形成された半導体基板の当該一面側に保護膜用の硬化剤を塗布する工程と、
次いで、前記硬化剤の表面を平坦化する工程と、
前記硬化剤にエネルギーを供給して当該硬化剤を硬化させて硬化剤層である保護膜を形成する工程と、
しかる後、前記半導体基板の他面側を削って厚さを小さくする工程と、
その後、前記半導体基板の他面側にダイシング用の保持体を接着する工程と、
次に、前記保護膜を半導体基板から取り除く工程と、を含むことを特徴とする。
他の発明は、一面側に複数の集積回路チップが形成された半導体基板を処理する装置において、
前記半導体基板の一面側に保護膜用の硬化剤を塗布するための塗布部と、
前記塗布部にて塗布された前記硬化剤の表面を平坦化するための平坦化処理部と、
前記硬化剤にエネルギーを供給して当該硬化剤を硬化させて硬化剤層である保護膜を形成するための硬化処理部と、
前記保護膜が形成され、更にその他面側が削られて厚さが小さくなり、その後当該他面側にダイシング用の保持体が接着された半導体基板の一面側の当該保護膜を半導体基板から取り除くための保護膜除去部と、
前記塗布部、平坦化処理部、硬化処理部、保護膜除去部の間にて半導体基板を搬送するための搬送機構と、を備えたことを特徴とする。
本発明の半導体基板の処理装置を説明する前に、本発明の装置により行われる工程の概要について図1~図3を参照しながら説明しておく。
先ず集積回路チップ(図示せず)が一面側(表面側)に形成された半導体基板である例えばシリコン基板であるウエハ(半導体ウエハ)Wの一面側に図1(a)に示すように剥離用の硬化剤11を塗布し、この硬化剤11に例えば紫外線(UV)を照射して硬化剤11を硬化させる(図1(b))。次いでウエハWの一面側に、即ち硬化剤11の上に保護膜用の硬化剤12を塗布し(図1(c))、更に保護膜用の硬化剤12の上に押圧部材例えば後述の石英ガラスに付着しない離型剤13を塗布する(図1(d))。硬化剤11、12が硬化することにより、硬化剤層が形成されるが、説明を簡素化するために、硬化前及び硬化後のいずれの状態においても硬化剤と呼ぶこととし、また符号についても同一の符号とする。
更にウエハWの表面を洗浄液で洗浄し、乾燥した後、図3(j)に示すように切断機構である例えばダイシングブレード23によりダイシングラインに沿ってウエハWを分断し、分断された各集積回路チップを含むダイ10aを取り出し機構によりダイシングテープ22から取り外す。
保護膜用の硬化剤12が光透過型の硬化剤である場合には、押圧部材14は光を透過する材料例えば石英ガラスなどのガラスを用いることができる。
また押圧部材14により保護膜用の硬化剤12の表面を押圧した後、押圧部材14を硬化剤12から離した後においても当該表面の平坦化が維持されている場合には、この状態で硬化剤12に紫外線を照射してもよい。
保護膜用の硬化剤12が熱硬化型の樹脂である場合には、保護膜用の硬化剤12が塗布されたウエハWが載置されるステージを例えばステージ内に設けたヒータにより加熱してもよいし、またはウエハWの上方からあるいはステージの下方側から赤外ランプなどのランプにより加熱してもよい。
ウエハWの裏面側(他面側)を研削、研磨して厚さを小さくした後、即ち薄層化した後(図2(g))、ウエハWが薄すぎて搬送が難しい場合には、ウエハWの保護膜の表面に搬送用の支持部材、例えば板状の支持部材を吸着あるいは接着などにより着脱自在に取り付けることが好ましい。支持部材としては、例えば後で詳述するように市販の板状の静電チャック部材を用いてもよいし、あるいは真空吸着機能(バキュームチャック機能)を備えた板状体を用いてもよいが、真空吸着の場合吸引路部材が必要であることから、静電チャック部材の方が簡素化できる利点がある。また支持部材としては、板状の押圧部材14、例えばガラス板を用いてもよく、この場合には硬化剤12からなる保護膜の表面にガラス板を接着する手法が挙げられる。なお、搬送用の支持部材を使用するか否かは保護膜の厚さなどに応じて決定することができるが、本発明は、搬送用の支持部材を使用することに限定されるものではない。
搬送用の支持部材としてガラス板などの押圧部材14を用いる場合には、粘着剤の粘着力を低下させるために例えば紫外線を照射することにより押圧部材14がウエハWから取り外される。剥離用の硬化剤11を用いる場合には、既述のように剥離用の硬化剤11に押圧部材14である例えばガラス板を介して例えばレーザー光を照射した後、押圧部材14をウエハWに対して相対的に持ち上げることによりウエハWの表面から押圧部材14及び保護膜用の硬化剤12が取り除かれる。
上述の発明の概要にて説明した工程について、より具体的な例(実施形態)を挙げて記載する。図4~図8は、表面にバンプが形成されていないウエハWに対して行われる一連の処理の第1の実施形態を示している。図4(a)は、ウエハWの表面に集積回路チップ10が形成された状態を示している。図4(b)~図4(d)は、夫々ウエハWに対して剥離用の硬化剤11を塗布する工程、当該硬化剤11を紫外線の照射により硬化する工程、硬化剤11の上に保護膜用の硬化剤12を塗布する工程を示している。
図9~図12は、本発明の装置により実施される第2の実施形態の工程を示す図である。第2の実施形態は、ウエハWにバンプ31が形成されている場合において行われる一連の処理の例を示している。この例では例えば400μm程度の厚さの保護膜を形成するために、保護膜用の硬化剤12を2度塗りしている。即ち、図9(c)、(d)に示すように、剥離用の硬化剤11の上に保護膜用の硬化剤12を塗布し、紫外線照射により硬化させた後、当該硬化剤12の上に更に硬化剤12を塗布している(図10(e))。その後、石英ガラス板からなる押圧部材14により硬化剤12の表面を押圧して平坦化した後、紫外線照射により硬化剤12を硬化させている。
図13~図17は、本発明の装置により実施される工程の第3の実施形態を示す図である。第3の実施形態は、集積回路チップに対して垂直に接続用の配線が伸びるTSV(Through -Silicon Via)を分離するための手法の一例である。図13~図17において、34は、接続用の配線である。
ウエハWの表面側に剥離用の硬化剤を塗布する工程(図3(a))からウエハWの表面にESC板15を取り付ける工程(図14(f))までは、保護膜用の硬化剤12を1回だけ塗ることを除けば、第2の実施形態と同様である。
図19、図20は、本発明の装置により実施される工程の第4の実施形態を示す図である。第4の実施形態は、保護膜用の硬化剤12を押圧するための押圧部材が搬送用の支持体を兼用する例である。図19(a)は、既述の実施形態のように剥離用の硬化剤11を硬化させた後、保護膜用の硬化剤12を塗布した状態を示している。この例では、保護膜用の硬化剤12として例えば紫外線により硬化する接着剤が用いられる。
この例では、保護膜用の硬化剤12として紫外線硬化型のものを用いているが、熱や光(可視光)により硬化するものを用いてもよい。また保護膜用の硬化剤12により押圧部材14である石英ガラス板を当該硬化剤12に接着しているが、硬化剤12として接着性のないものを用いる場合には、押圧部材14の押圧面に事前に接着剤、例えば紫外線、熱あるいは光により硬化する接着剤を塗布し、例えば先に硬化剤12を硬化させた後、接着剤を硬化させるようにしてもよい。このように別途接着剤を用いる場合には、当該接着剤も保護膜の一部となる。
なお、この例のように石英ガラスを押圧部材、搬送用の支持体として用いることに限らず、保護膜用の硬化剤12を押圧、硬化して平坦化する工程の後に、当該石英ガラスあるいは他の石英ガラスを硬化剤12の表面に貼り付けて当該石英ガラスを搬送用の支持体として用いてもよい。
次に本発明の半導体基板の処理装置の一例について説明する。図21~図23に示す半導体基板の処理装置は、例えば既述の第1の実施形態、第2の実施形態及び第3の実施形態に記載した工程を実施できるように構成されている。半導体基板の処理装置は、外部に対して半導体基板であるウエハWを搬入出するための搬入出ブロックS1と、この搬入出ブロックS1から見て奥側に順番に配置された中継ブロックS2、第1の処理ブロックS3、第2の処理ブロックS4、及びグラインド装置Gと、を備えている。各ブロックS1~S4は、例えば互に接続、分離できる構造体により構成されている。
1階、2階ブロックB1、B2の各々には、主搬送機構50、60の搬送路51、61の左右両側にウエハWに対して処理を行うためのモジュールが配置されている。1階ブロックB1においては、搬入出ブロックS1から見て右側に、剥離用の硬化剤11を塗布するための塗布部である塗布モジュール51、保護膜用の硬化剤12を塗布するための例えば2台の塗布部である塗布モジュール52、53が設けられている。また左側には、剥離用の硬化剤11を硬化させるための硬化処理部に相当する、紫外線を照射する紫外線モジュール54、第2の実施形態のように保護膜用の硬化剤12を2回塗りするときに1回目に塗布された保護膜用の硬化剤12を硬化させるための硬化処理部に相当する、紫外線を照射する紫外線モジュール55、保護膜用の硬化剤12の表面を押圧すると共に当該硬化剤12を硬化させるための紫外線を照射する、この例では硬化処理部と平坦化処理部を兼用する(詳しくは載置台を共用する)平坦化モジュール56と、が設けられている。
平坦化モジュール56は、図25に示すようにウエハを載置するための載置台561と、板状の押圧部材14、例えば石英ガラスの上面を吸着して載置台561上のウエハWの表面を押圧する押圧位置と載置台561から横に離れた待機位置との間で移動させる、進退自在、昇降自在な作動機構562とを備えている。560は吸着部である。載置台561の上方には、ランプハウス563内に配置された、紫外線を照射する機構に相当する紫外線ランプを含む紫外線照射部564が配置されている。565は筐体であり、566は紫外線透過窓である。また載置台561には、図示していないが、主搬送機構50との間でウエハWの受け渡しを行うための3本の昇降ピンが埋没している。紫外線照射部564から照射される紫外線の波長は、保護膜用の硬化剤12を硬化するための波長に設定されている。
ダイシングテープを貼り付けるためのモジュールとしては、公知の装置を使用できるが、このモジュールを半導体基板の処理装置に設けずに装置の外部に設けるようにしてもよい。しかしながら、ウエハWの搬送工程を少なくして高いスループットを得るという観点からは、当該モジュールを処理装置内に設けることが好ましい。
上述の例において、押圧部材14を保護膜用の硬化剤12に接触させるにあたり、硬化剤12の表面と押圧部材14との間に、離型剤を介在させるように構成してもよい。この場合には、例えば離型剤をミスト状に塗布するための離型剤塗布部である塗布モジュールが設けられる。この塗布モジュールとしては例えば硬化剤12を塗布するモジュールを利用することができ、硬化剤12をウエハWに塗布した後、続いて離型剤をウエハWの上方からミストにより供給し、その後にウエハWを平坦化モジュール56に搬送する例が挙げられる。また離型剤は押圧部材14側に塗布するようにしてもよく、この場合には、事前に離型剤を塗布した押圧部材14が用いられる。あるいは、平坦化モジュール57内の作動機構562のアクセス範囲内に離型剤を押圧部材14に塗布するための機構を設けることができる。
上述の装置においては、保護膜用の硬化剤12を平坦化させるためのモジュールと硬化剤12を硬化させるモジュールとが共用されているが、これらモジュールは、別々のモジュールとして構成してもよい。この場合には、例えば押圧部材14により保護膜用の硬化剤12を押圧して平坦化する平坦化処理部と、平坦化された硬化剤12を硬化させる硬化処理部とが別々のモジュールとして構成されることになる。
また保護膜剥離用のモジュールにおいて、66ウエハWに接している膜、この例では剥離用の硬化剤12を変質させる機構については、硬化剤12が紫外線により変質する場合には、紫外線の照射機構が用いられ、また硬化剤12が加熱により変質する場合には、載置台661を加熱するヒータなどの加熱機構が用いられる。また硬化剤12を変質させる機構としては、保護膜にウエハWから離れる方向に物理的な剥離力を相対的に作用させる機構、例えば保護膜の全面に吸着する吸着部材を引き上げる機構などであってもよい。
更にまた保護膜除去部は、剥離用の硬化剤11及び保護膜用の硬化剤12を溶剤により除去するように構成してもよく、この場合には表面側が下向きになるようにウエハWを配置し、下方側からウエハWの表面に溶剤を供給する機構を使用することができる。
図28、図29に示した装置においてウエハの流れが図21、図22に示した装置と異なる点は、ウエハWの表面の保護膜用の硬化剤12を硬化させた後、ウエハWが保護膜剥離用のモジュールに至るまで押圧部材14と共に搬送され、ESC板15の着脱工程が存在しないことにある。
10 集積回路チップ
11 剥離用の硬化剤
12 保護膜用の硬化剤
14 押圧部材
15 ESC板
21 ダイシングフレーム
22 ダイシングテープ
31 レーザー光
32 割れ目
33 バンプ
34 接続用の配線
35 絶縁膜
36 バンプ
C キャリア
42 受け渡し機構
43 受け渡し棚
44 第1の移載機校
51~53、 塗布モジュール
54、55 紫外線モジュール
56 平坦化モジュール
61 塗布モジュール
62 ダイシングテープをウエハに貼り付けるためのモジュール
63 洗浄モジュール
64 加熱モジュール
65 ESC板着脱用のモジュール
66 保護膜剥離用のモジュール
71 受け渡し棚
72 第2の移載機構
73 ステルスダイシング装置
65 ESC板を取り外すためのモジュール
Claims (20)
- 一面側に複数の集積回路チップが形成された半導体基板の当該一面側に保護膜用の硬化剤を塗布する工程と、
次いで、前記硬化剤の表面を平坦化する工程と、
前記硬化剤にエネルギーを供給して当該硬化剤を硬化させて硬化剤層である保護膜を形成する工程と、
しかる後、前記半導体基板の他面側を削って厚さを小さくする工程と、
その後、前記半導体基板の他面側にダイシング用の保持体を接着する工程と、
次に、前記保護膜を半導体基板から取り除く工程と、を含むことを特徴とする半導体基板の処理方法。 - 前記硬化剤の表面を平坦化する工程は、前記硬化剤が硬化する前に行われ、当該硬化剤の表面を、押圧面が平坦面である押圧部材により押圧する工程であることを特徴とする請求項1記載の半導体基板の処理方法。
- 前記エネルギーは、前記押圧部材が前記硬化剤の表面に接触している状態で当該硬化剤に供給されることを特徴とする請求項2記載の半導体基板の処理方法。
- 前記押圧部材は、半導体基板の搬送用の支持部材を兼用する板状体により構成され、
前記硬化剤の表面を平坦化する工程を行う時に前記押圧部材を当該硬化剤の表面に接着させ、
前記半導体基板の他面側にダイシング用の保持体を接着する工程を行った後に前記押圧部材を半導体基板から取り外す工程を行うことを特徴とする請求項2記載の半導体基板の処理方法。 - 前記押圧部材を半導体基板から取り外す工程は、前記押圧部材と前記硬化剤とが接着されたまま当該硬化剤を半導体基板から取り除く工程であることを特徴とする請求項4記載の半導体基板の処理方法。
- 前記硬化剤の表面を平坦化する工程は、前記硬化剤が硬化した後、機械的、化学的研磨で平坦化するCMP工程である請求項1記載の半導体基板の処理方法。
- 前記半導体基板の他面側を削って厚さを小さくする工程を行った後、当該半導体基板にダイシング用の保持体を接着する前に、当該半導体基板の一面側に支持部材を取り付け、その後、当該半導体基板の他面側にダイシング用の保持体を接着することを特徴とする請求項1記載の半導体基板の処理方法。
- 前記硬化剤をエネルギーで硬化させる工程は、前記押圧部材を介して硬化剤に対して紫外線またはレーザー光を照射する工程であることを特徴とする請求項2記載の半導体基板の処理方法。
- 前記保護膜を半導体基板から取り除く工程は、前記半導体基板の一面側に前記エネルギーとは異なるエネルギーを供給して当該半導体基板に接している膜を変質させる工程であることを特徴とする請求項1記載の半導体基板の処理方法。
- 前記保護膜用の硬化剤を前記半導体基板の一面側に塗布する前に、当該一面側に剥離用の硬化剤を塗布する工程を含み、
前記膜を変質させる工程にて使用される前記エネルギーは、前記剥離用の硬化剤を前記半導体基板の一面側から剥離するためのエネルギーであることを特徴とする請求項9記載の半導体基板の処理方法。 - 一面側に複数の集積回路チップが形成された半導体基板を処理する装置において、
前記半導体基板の一面側に保護膜用の硬化剤を塗布するための塗布部と、
前記塗布部にて塗布された前記硬化剤の表面を平坦化するための平坦化処理部と、
前記硬化剤にエネルギーを供給して当該硬化剤を硬化させて硬化剤層である保護膜を形成するための硬化処理部と、
前記保護膜が形成され、更にその他面側が削られて厚さが小さくなり、その後当該他面側にダイシング用の保持体が接着された半導体基板の一面側の当該保護膜を半導体基板から取り除くための保護膜除去部と、
前記塗布部、平坦化処理部、硬化処理部、保護膜除去部の間にて半導体基板を搬送するための搬送機構と、を備えたことを特徴とする半導体基板の処理装置。 - 前記平坦化処理部は、前記硬化剤が硬化する前に当該硬化剤の表面を押圧するための押圧面が平坦面である押圧部材を備えていることを特徴とする請求項11記載の半導体基板の処理装置。
- 前記硬化処理部は、前記平坦化処理部と共用され、前記押圧部材が前記硬化剤の表面に接触している状態で当該硬化剤に前記エネルギーを供給するように構成されていることを特徴とする請求項12記載の半導体基板の処理装置。
- 前記押圧部材は、半導体基板の搬送用の支持部材を兼用する板状体により構成され、
前記硬化剤として硬化時に押圧部材と接着する材料であるかまたは前記硬化剤と押圧部材との間に接着剤を介在させることにより、前記硬化剤の表面を平坦化するときに前記押圧部材が当該硬化剤の表面に接着するように構成されていることを特徴とする請求項12記載の半導体基板の処理装置。 - 前記保護膜除去部は、前記押圧部材と前記保護膜とが接着されたまま当該保護膜を半導体基板から取り除くように構成されていることを特徴とする請求項14記載の半導体基板の処理装置。
- 前記半導体基板の他面側を削って厚さを小さくした後、当該半導体基板にダイシング用の保持体を接着する前に、当該半導体基板の一面側に搬送用の支持部材を取り付けるための支持部材取り付け部を備えたことを特徴とする請求項11記載の半導体基板の処理装置。
- 前記搬送用の支持部材は、静電吸着機能を有する静電チャック板であることを特徴とする請求項16記載の半導体基板の処理装置。
- 前記硬化処理部は、前記押圧部材を介して硬化剤に対して紫外線またはレーザー光を照射するように構成されていることを特徴とする請求項12記載の半導体基板の処理装置。
- 前記保護膜除去部は、前記半導体基板の一面側に前記エネルギーとは異なるエネルギーを供給して当該半導体基板に接している膜を変質させる機構を備えていることを特徴とする請求項11記載の半導体基板の処理装置。
- 前記保護膜用の硬化剤を前記半導体基板の一面側に塗布する前に、当該一面側に剥離用の硬化剤を塗布するための塗布部を備え、
前記保護膜除去部における前記膜を変質させる機構は、前記剥離用の硬化剤を前記半導体基板の一面側から剥離するためのエネルギーを供給する機構であることを特徴とする請求項19記載の半導体基板の処理装置。
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