WO2018113207A1 - Oled显示面板及显示装置 - Google Patents

Oled显示面板及显示装置 Download PDF

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Publication number
WO2018113207A1
WO2018113207A1 PCT/CN2017/088081 CN2017088081W WO2018113207A1 WO 2018113207 A1 WO2018113207 A1 WO 2018113207A1 CN 2017088081 W CN2017088081 W CN 2017088081W WO 2018113207 A1 WO2018113207 A1 WO 2018113207A1
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Prior art keywords
oled
display panel
light emitting
oled display
substrate
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PCT/CN2017/088081
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English (en)
French (fr)
Inventor
孙艳六
史世明
刘政
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京东方科技集团股份有限公司
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Priority to US15/744,499 priority Critical patent/US10510814B2/en
Publication of WO2018113207A1 publication Critical patent/WO2018113207A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/88—Dummy elements, i.e. elements having non-functional features
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/1335—Combining adjacent partial images (e.g. slices) to create a composite input or reference pattern; Tracking a sweeping finger movement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals

Definitions

  • Embodiments of the present disclosure relate to an OLED display panel and a display device.
  • OLED display panels are increasingly moving toward narrow bezels and full-surface displays.
  • the traditional OLED display panel with fingerprint identification, camera, microphone, etc. on the whole surface can not meet the new user requirements, and other fingerprint recognition methods need to be developed.
  • Embodiments of the present disclosure provide an OLED display panel and a display device, which can implement a fingerprint recognition function in a display area of an OLED display panel.
  • At least one embodiment of the present disclosure provides an OLED display panel, including: a substrate substrate, a plurality of OLED light emitting devices disposed on one side of the substrate substrate, and signals corresponding to the respective OLED light emitting devices a line and control device, an image sensor disposed on the other side or the same side of the substrate, and an image forming area having at least one small aperture disposed between the image sensor and a film layer of each of the OLED light emitting devices Shading layer.
  • An orthographic projection area of the aperture imaging region on the substrate substrate is disposed at a gap between each of the OLED light emitting devices, and a light shielding member in the signal wiring and control device is on the substrate
  • the orthographic projection positions on the substrate are staggered.
  • the image sensor is configured to acquire imaging of an object above the OLED display panel after passing through the aperture imaging region.
  • the aperture imaging area includes a plurality of openings arranged in an array.
  • a center distance d between two adjacent ones of the openings is full Sufficient for one or a combination of:
  • n is the refractive index of the film layer in contact with the receiving surface of the image sensor
  • h d is the distance between the lower surface of the light shielding layer and the upper surface of the image sensor
  • h t is the light shielding layer
  • the thickness, h o is the distance between the upper surface of the light shielding layer and the upper surface of the OLED display panel.
  • each of the openings has a diameter of between 5 ⁇ m and 20 ⁇ m.
  • the following relationship is satisfied between the aperture imaging area and the closest OLED light emitting device:
  • the horizontal distance between the aperture imaging region and the closest OLED light emitting device is greater than the vertical distance between the aperture imaging region and the closest OLED light emitting device.
  • the signal trace includes: disposed between a film layer where each OLED light emitting device is located and the substrate substrate Data line
  • the light shielding layer is disposed between the film layer where the OLED light emitting device is located and the film layer where the data line is located;
  • the light shielding layer further includes: a connection through hole configured to connect other patterns in the film layer where the data line is located and an anode in the OLED light emitting device.
  • an anode in the OLED light emitting device has a stacked structure including a light shielding metal film layer
  • An orthographic projection of an anode on the substrate in the OLED light emitting device covers an orthographic projection of the connection via.
  • the signal layer included in the film layer of the data line is only a data line
  • the light shielding layer is a conductive layer configured to load a DC voltage signal.
  • the light shielding layer further includes: a hollow region disposed at least partially above the data line;
  • the anode in the OLED light emitting device has a stacked structure including a light shielding metal film layer, and an orthographic projection of an anode on the substrate substrate in the OLED light emitting device covers an orthographic projection of the hollow region.
  • a line width of the data line is greater than 2.3 ⁇ m, and a thickness of the film layer where the data line is located is less than 700 nm.
  • a line width of the data line is 3.5 ⁇ m, and a thickness of the film layer where the data line is located is 500 nm.
  • an area of an anode in the OLED light emitting device is larger than an area of a light emitting layer in the OLED light emitting device.
  • the image sensor is disposed on the whole surface or only under the small hole imaging region.
  • Embodiments of the present disclosure also provide a display device including the OLED display panel.
  • FIG. 1 is a schematic side view showing an OLED display panel according to an embodiment of the present disclosure
  • FIG. 2 is a schematic top plan view of an OLED display panel according to an embodiment of the present disclosure
  • 3a and 3b are schematic diagrams showing the working principle of an aperture imaging area of an OLED display panel according to an embodiment of the present disclosure
  • FIG. 4 is a schematic diagram of an operation principle of an aperture imaging of an OLED display panel according to another embodiment of the present disclosure.
  • An embodiment of the present disclosure provides an OLED display panel, as shown in FIG. 1 , comprising: a substrate substrate 100 , a plurality of OLED light emitting devices 200 disposed on a side of the substrate substrate 100 , corresponding to each OLED light emitting device 200 Connected signal traces and control devices, image sensor 300 disposed on the other side or the same side of the base substrate 100, and at least one aperture formed between the image sensor 300 and the film layer of each OLED light emitting device 200 The light shielding layer 400 of the region 410.
  • the area of the aperture projection area 400 on the substrate substrate 100 is disposed at the gap between the OLED light-emitting devices 200, and the light-shielding member in the signal trace and the control device is on the substrate.
  • the areas of the orthographic projections on the substrate 100 are staggered.
  • the image sensor 300 is used to acquire an image after an object above the OLED display panel passes through the aperture imaging area 410. For example, when a finger is placed on the surface of the OLED display panel, the image sensor 300 can recognize the fingerprint and touch detection.
  • the OLED display panel provided by the embodiment of the present disclosure adds an image sensor 300 below the OLED light emitting device 200, and adds a light shielding layer 400 having at least one small aperture imaging region 410 between the image sensor 300 and the OLED light emitting device 200, Utilizing a gap in the light shielding layer 400 corresponding to each OLED light emitting device 200 and with a signal trace and a light blocking portion in the control device
  • the apertured imaging area 410 is staggered to image an image located above the OLED display panel on the image sensor 300. For example, when a finger is placed over the OLED display panel corresponding to the aperture imaging area 410, a fingerprint acquisition and recognition function can be implemented. In this way, the fingerprint recognition function can be implemented in the display area of the OLED display panel, reducing the incidental area of the entire display device, and achieving a borderless design.
  • the image sensor 300 may be disposed on the back surface of the base substrate 100 as shown in FIG. 1 or on the front surface of the base substrate (ie, the surface on which the OLED light emitting device is fabricated). Embodiments of the present disclosure are not limited thereto.
  • the image sensor 300 may be disposed entirely on the surface or may be disposed only below the aperture imaging area 410 as shown in FIG. 1, but the embodiment of the present disclosure is not limited thereto.
  • the image sensor 300 can implement an image detecting function using a device such as a CCD.
  • the image sensor 300 is disposed on the back surface of the base substrate 100 as an example, but the embodiment of the present disclosure is not limited thereto.
  • each OLED light emitting device 200 may be, for example, a control circuit composed of a plurality of transistors, and the structure thereof may have various implementation manners.
  • the light-shielding component refers to a component in the transistor such as a gate, a source and a drain that block light.
  • a plurality of openings 411 are provided in each of the aperture imaging regions 410 to avoid such image blurring of the edge.
  • the aperture imaging regions 410 form a plurality of apertures 411 arranged in an array.
  • the aperture imaging regions 410 are formed with 2*2 openings. Hole 411.
  • embodiments of the present disclosure are not limited thereto.
  • each of the openings 411 in the aperture imaging area 410 images a part of the fingerprint
  • the image sensor 300 extracts and processes each part of the fingerprint after the subsequent image extraction and processing.
  • the images are stitched and integrated to form a complete and clear fingerprint image.
  • the partial fingerprint image imaged by each adjacent two apertures 411 contains a part of the shared fingerprint image.
  • the imaging angle ⁇ should be satisfied to be smaller than the total reflection angle, that is, ⁇ ⁇ arcsin (1/n), where n is the refractive index of the film layer in contact with the receiving surface of the image sensor 300.
  • n is the refractive index of the base substrate 100.
  • the center between the adjacent two apertures 411 is required.
  • the distance d satisfies the following formula: d ⁇ 2*(h o +h t /2)*tan(arcsin(1/n)), where n is the refractive index of the film layer in contact with the receiving surface of the image sensor 300, h t is the thickness of the light shielding layer 400, and h o is the distance between the upper surface of the light shielding layer 400 and the upper surface 500 of the OLED display panel (ie, the surface in contact with the fingerprint).
  • the setting is prevented.
  • the center distance d between the adjacent two openings 410 satisfies the following formula: d>2*(h d +h t /2)*tan(arcsin(1/n)), where n is the image sensor 300
  • n is the image sensor 300
  • the refractive index of the film layer that is in contact with the receiving surface h t is the thickness of the light shielding layer 400
  • h d is the distance between the lower surface of the light shielding layer 400 and the upper surface of the image sensor 300.
  • the diameter of the opening 411 can be set according to the internal structure of the OLED display panel and the sensitivity of the image sensor 300 used.
  • the diameter of each opening 411 is generally set to be between 5 ⁇ m and 20 ⁇ m, and for example, the diameter of the opening 411 may be set to 5 ⁇ m.
  • the aperture imaging area 410 and the closest OLED light emitting device 200 are configured to satisfy the following relationship: the aperture imaging area 410 is closest to the distance The horizontal distance a between the OLED light emitting devices 200 is greater than the vertical distance b between the small hole imaging region 400 and the closest OLED light emitting device 200 to avoid illuminating due to the light shielding layer 400 having the small hole imaging region 410 disposed in each OLED. Below the film layer where the device 200 is located, light emitted by the OLED light emitting device 200 may affect the imaging of the aperture imaging region 410.
  • the signal The trace includes: a data line 600 disposed between the film layer of each OLED light emitting device 200 and the base substrate 100, and a DC voltage signal line, a gate line, and the like.
  • the source and drain of the thin film transistor included in the control device are generally disposed in the same film layer as the data line 600 and the DC voltage signal line, and the gate is generally disposed in the same layer as the gate line.
  • the added light shielding layer 400 may be disposed on the OLED.
  • the light-shielding layer 400 is provided with a film layer for connecting the data line 600.
  • Other patterns such as a drain of a certain transistor (eg, a drain or a pattern including a drain) are connected to the via hole 420 of the anode 210 in the OLED light emitting device 200.
  • the image of the aperture is affected, for example, the above OLED provided in the embodiment of the present disclosure.
  • the anode 210 in the OLED light-emitting device 200 may be disposed to have a laminated structure including a light-shielding metal film layer.
  • the anode 210 may be fabricated using a structure of ITO/Ag/ITO.
  • the anode 210 of the light emitting device 200 is an opaque film layer.
  • the anode 210 can be used to block the connection via 420 in the light shielding layer 400, so that the anode 210 in the OLED light emitting device 200 is on the substrate substrate 100.
  • the orthographic projection covers the orthographic projection of the connection via 420, that is, the anode 210 and the light shielding layer 400 overlap in a direction perpendicular to the base substrate 100.
  • the light shielding layer 400 is a full-surface film layer having a partial opening, the DC voltage signal line originally disposed on the same film layer as the data line 600 can be disposed.
  • the signal traces included in the film layer where the data line 600 is located are only the data line 600.
  • the light shielding layer 400 is made of a conductive material, and the light shielding layer 400 is used to realize the action of the DC voltage signal line, that is, the light shielding layer 400 is a conductive layer for loading a DC voltage signal.
  • the insulating layer 700 may be added between the light shielding layer 400 and the film layer where the data line 600 is located.
  • both of them need to be disposed at a gap with each OLED light emitting device 200, resulting in an AC load for satisfying the signal transmission of the data line 600 ( RC loading) requires data line 600 to be line width
  • the film layer is relatively thin in order to reduce the resistance, and the function of the DC voltage signal line is moved to the light shielding layer 400, so that the installation space of the data line 600 in the film layer can be increased, and the resistance value can be reduced.
  • the line width of the data line is 2.3 ⁇ m and the thickness is 750 nm; and after the function of the DC voltage signal line is moved to the light shielding layer, the data line 600 is The line width may be greater than 2.3 ⁇ m, and the thickness of the film layer where the data line 600 is located may be less than 700 nm.
  • the line width of the data line 600 can be made 3.5 ⁇ m, and the thickness of the film layer where the data line 600 is placed is reduced to 500 nm.
  • the light shielding layer 400 is a conductive layer for loading a DC voltage signal, as shown in FIG. 1, it may be disposed in the light shielding layer 400. At least a portion of the hollowed out region 430 above the data line, that is, an opening may be formed in the light shielding layer 400 above the data line 600 on the basis of ensuring the continuity of the film layer of the light shielding layer 400 to reduce the overlap of the light shielding layer 400 and the data line 600 Capacitor to avoid the phenomenon that signal signals may be interfered with each other.
  • the anode 210 of the OLED light emitting device 200 when the anode 210 of the OLED light emitting device 200 is an opaque film layer, the anode 210 may be used to hollow the light shielding layer 400.
  • the region 430 is occluded such that the orthographic projection of the anode 210 in the OLED light emitting device 200 on the substrate substrate 100 covers the orthographic projection of the hollow region 430.
  • the occlusion through the hollow region 430 and the connection via 420 in the light shielding layer 400 is achieved by increasing the area of the anode 210 of the OLED light emitting device 200.
  • the effect of stray light For example, only the area of the anode 210 in the OLED light emitting device 200 may be increased to meet the above requirements, that is, to ensure the relative proportional relationship of the illuminating colors, the area of the luminescent layer 220 (EL) in the OLED illuminating device 200 is not changed.
  • the area of the anode 210 in the OLED light emitting device 200 may be larger than the area of the light emitting layer 220 in the OLED light emitting device 200.
  • an embodiment of the present disclosure further provides a display device, which includes the OLED display panel provided by the embodiment of the present disclosure, and the display device may be: a mobile phone, a tablet computer, a television, a display, a notebook computer, and a digital device. Any product or component that has a display function, such as a photo frame or a navigator.
  • the display device reference may be made to the embodiment of the above OLED display panel, and the repeated description is omitted.
  • the OLED display panel and the display device provided by the embodiments of the present disclosure add an image sensor under the OLED light emitting device, and add between the image sensor and the OLED light emitting device.
  • the light shielding layer of the at least one small aperture imaging area is disposed on the OLED display panel by using a small aperture imaging area corresponding to the gap between each OLED light emitting device in the light shielding layer and offset from the signal wiring and the light shielding member in the control device
  • the upper object is imaged on the image sensor, and when the finger is placed over the corresponding OLED display panel of the small hole imaging area, the fingerprint collection and recognition function can be realized. In this way, the fingerprint recognition function can be implemented in the display area of the OLED display panel, reducing the incidental area of the entire display device, and achieving a borderless design.

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Abstract

提供一种OLED显示面板及显示装置，在OLED发光器件（200）的下方增加图像传感器（300），并在图像传感器（300）和OLED发光器件（200）之间增加具有至少一个小孔成像区域（410）的遮光层（400），利用遮光层（400）中与各OLED发光器件（200）之间的间隙处对应且与信号走线和控制器件中的遮光部件错开设置的小孔成像区域（410），对位于OLED显示面板上方的物体在图像传感器（300）上进行成像，在OLED显示面板的显示区域内实现指纹识别功能，减少整个显示装置的附带区域，实现无边框设计。

Description

OLED显示面板及显示装置 技术领域
本公开的实施例涉及一种OLED显示面板及显示装置。
背景技术
有机发光二极管(Organic Light-Emitting Diode,OLED)显示面板越来越多地向窄边框、整面显示方向发展。传统的OLED显示面板在整面存在的附带指纹识别、相机、话筒等已经不能适应新的用户需求，需要开发其它的指纹识别方式。
发明内容
本公开的实施例提供了一种OLED显示面板及显示装置，可以在OLED显示面板的显示区实现指纹识别功能。
本公开的至少一个实施例提供了一种OLED显示面板，包括：衬底基板，设置于所述衬底基板一侧之上的多个OLED发光器件，与各所述OLED发光器件对应连接的信号走线和控制器件，设置于所述衬底基板另一侧或同侧的图像传感器，以及设置于所述图像传感器和各所述OLED发光器件所在膜层之间的具有至少一个小孔成像区域的遮光层。
所述小孔成像区域在所述衬底基板上的正投影位置设置于各所述OLED发光器件之间的间隙处，且与所述信号走线和控制器件中的遮光部件在所述衬底基板上的正投影位置错开设置。
所述图像传感器配置来获取在所述OLED显示面板上方的物体经过所述小孔成像区域后的成像。
在一种可能的实现方式中，在本公开实施例提供的所述OLED显示面板中，所述小孔成像区域包括阵列排布的多个开孔。
在一种可能的实现方式中，在本公开实施例提供的所述OLED显示面板中，在一个所述小孔成像区域内，相邻的两个所述开孔之间的中心距离d满 足以下之一或组合关系：
d<2*(ho+ht/2)*tan(arcsin(1/n))，d>2*(hd+ht/2)*tan(arcsin(1/n))；
其中，n为与所述图像传感器的接收面接触的膜层的折射率，hd为所述遮光层的下表面与所述图像传感器的上表面之间的距离，ht为所述遮光层的厚度，ho为所述遮光层的上表面与所述OLED显示面板的上表面之间的距离。
在一种可能的实现方式中，在本公开实施例提供的所述OLED显示面板中，各所述开孔的直径在5μm-20μm之间。
在一种可能的实现方式中，在本公开实施例提供的所述OLED显示面板中，所述小孔成像区域与距离最近的所述OLED发光器件之间满足如下关系：
所述小孔成像区域与距离最近的OLED发光器件之间的水平距离大于所述小孔成像区域与距离最近的OLED发光器件之间的垂直距离。
在一种可能的实现方式中，在本公开实施例提供的所述OLED显示面板中，所述信号走线包括：设置于各所述OLED发光器件所在膜层与所述衬底基板之间的数据线；
所述遮光层设置于所述OLED发光器件所在膜层与所述数据线所在膜层之间；
所述遮光层还包括：配置来连接所述数据线所在膜层中的其他图案与所述OLED发光器件中的阳极的连接通孔。
在一种可能的实现方式中，在本公开实施例提供的所述OLED显示面板中，所述OLED发光器件中的阳极具有包含遮光金属膜层的叠层结构；
所述OLED发光器件中的阳极在所述衬底基板上的正投影覆盖所述连接通孔的正投影。
在一种可能的实现方式中，在本公开实施例提供的所述OLED显示面板中，所述数据线所在膜层包含的信号走线仅为数据线；以及
所述遮光层为配置来加载直流电压信号的导电层。
在一种可能的实现方式中，在本公开实施例提供的所述OLED显示面板中，所述遮光层还包括：设置在至少部分所述数据线上方的镂空区域；以及
所述OLED发光器件中的阳极具有包含遮光金属膜层的叠层结构，所述OLED发光器件中的阳极在衬底基板上的正投影覆盖所述镂空区域的正投影。
在一种可能的实现方式中，在本公开实施例提供的所述OLED显示面板中，所述数据线的线宽大于2.3μm，所述数据线所在膜层的厚度小于700nm。
在一种可能的实现方式中，在本公开实施例提供的所述OLED显示面板中，所述数据线的线宽为3.5μm，所述数据线所在膜层的厚度为500nm。
在一种可能的实现方式中，在本公开实施例提供的所述OLED显示面板中，所述OLED发光器件中阳极的面积大于所述OLED发光器件中发光层的面积。
在一种可能的实现方式中，在本公开实施例提供的所述OLED显示面板中，所述图像传感器整面设置，或仅设置在所述小孔成像区域的下方。
本公开的实施例还提供了一种显示装置，包括所述OLED显示面板。
附图说明
以下将结合附图对本公开的实施例进行更详细的说明，以使本领域普通技术人员更加清楚地理解本公开的实施例，其中：
图1为本公开的实施例提供的OLED显示面板的侧视结构示意图；
图2为本公开的实施例提供的OLED显示面板的俯视结构示意图；
图3a和图3b分别为本公开的一个实施例提供的OLED显示面板的小孔成像区域工作原理的示意图；
图4为本公开的另一个实施例提供的OLED显示面板的小孔成像工作原理示意图。
具体实施方式
下面将结合本公开的实施例中的附图，对本公开的实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开的一部分实施例，而不是全部的实施例。基于本公开中的实施例，本领域普通技术人员在无须做出创造性劳动前提下所获得的所有其它实施例，都应属于本公开保护 的范围。
除非另外定义，此处使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。发明人注意到，开发在显示面板的显示(AA)区内的指纹识别技术可以有效减少OLED显示面板的附带区域，做到整面显示。
下面结合附图，对本公开实施例提供的OLED显示面板及显示装置的具体实施方式进行详细地说明。
本公开实施例提供了一种OLED显示面板，如图1所示，包括：衬底基板100，设置于衬底基板100一侧之上的多个OLED发光器件200，与各OLED发光器件200对应连接的信号走线和控制器件，设置于衬底基板100另一侧或同侧的图像传感器300，以及设置于图像传感器300和各OLED发光器件200所在膜层之间的具有至少一个小孔成像区域410的遮光层400。
如图2所示，小孔成像区域400在衬底基板100上的正投影的区域设置于各OLED发光器件200之间的间隙处，且与信号走线和控制器件中的遮光部件在衬底基板100上的正投影的区域错开设置。
图像传感器300用于获取在OLED显示面板上方的物体经过小孔成像区域410后的成像。例如，当手指放置于OLED显示面板的表面时，图像传感器300可以对指纹进行识别，以及触控检测。
本公开实施例提供的所述OLED显示面板，在OLED发光器件200的下方增加图像传感器300，并在图像传感器300和OLED发光器件200之间增加具有至少一个小孔成像区域410的遮光层400，利用遮光层400中与各OLED发光器件200之间的间隙处对应且与信号走线和控制器件中的遮光部 件错开设置的小孔成像区域410，对位于OLED显示面板上方的物体在图像传感器300上进行成像。例如，当手指放置于小孔成像区域410对应的OLED显示面板上方时，可以实现指纹采集和识别功能。以此方式，可以在OLED显示面板的显示区域内实现指纹识别功能，减少整个显示装置的附带区域，做到无边框设计。
在本公开实施例提供的上述OLED显示面板中，图像传感器300可以如图1所示设置于衬底基板100的背面，也可以设置于衬底基板的正面(即制作OLED发光器件的表面)，本公开的实施例并不限于此。例如，图像传感器300可以整面设置，也可以如图1所示仅设置在小孔成像区域410的下方，但是本公开的实施例并不限于此。例如，图像传感器300可以采用诸如CCD等器件实现图像检测功能。下面是以图像传感器300设置于衬底基板100的背面为例进行说明，但是本公开的实施例并不限于此。
在本公开实施例提供的所述OLED显示面板中，与各OLED发光器件200对应连接的控制器件例如可以是由多个晶体管组成的控制电路，其结构可以有多种实现方式其中，控制器件的遮光部件指的是晶体管中的诸如栅极、源漏极等对光线有遮挡作用的部件。
采用小孔成像原理进行指纹识别时，在孔的中心成像较为清晰，越往孔的边缘成像越模糊。在本公开实施例提供的OLED显示面板中，采用在每个小孔成像区域410设置多个开孔411的方式来避免此种边缘成像模糊的现象。例如，如图3a和图3b所示，小孔成像区域410形成阵列排布的多个开孔411，例如，如图3a和图3b所示，小孔成像区域410形成有2*2个开孔411。但是，本公开的实施例并不限于此。
例如，在小孔成像区域410内的每个开孔411会对部分指纹进行成像，图像传感器300在获取到各开孔411成像的部分指纹图像后，经过后期的图像提取和处理将各部分指纹图像进行拼接与整合形成完整清晰的指纹图像。为了便于将各部分指纹图像进行拼接，每相邻两个开孔411成像的部分指纹图像包含一部分共有指纹图像。
进一步地，例如，为了使图像传感器300能有效获取与各开孔411对应的部分指纹图像，即需要使指纹的反射光能够达到图像传感器300的接收面， 如图4所示，应满足成像角度θ小于全反射角，即θ<arcsin(1/n)，其中n为与图像传感器300的接受面接触的膜层的折射率。例如，当图像传感器300设置于衬底基板100的底面时，n为衬底基板100的折射率。
为了保证在一个小孔成像区域410内，如图3a所示，每相邻两个开孔411成像的部分指纹图像包含一部分共有指纹图像，就要求相邻的两个开孔411之间的中心距离d满足如下公式：d<2*(ho+ht/2)*tan(arcsin(1/n))，其中，n为与图像传感器300的接收面接触的膜层的折射率，ht为遮光层400的厚度，ho为遮光层400的上表面与OLED显示面板的上表面500(即与指纹接触的表面)之间的距离。
此外，在本公开实施例提供的所述OLED显示面板中，为了避免相邻两个开孔410的成像出现如图3b所示的交叠情况，以便防止给后期图像提取与处理造成困难，设置相邻的两个开孔410之间的中心距离d满足如下公式：d>2*(hd+ht/2)*tan(arcsin(1/n))，其中，n为与图像传感器300的接收面接触的膜层的折射率，ht为遮光层400的厚度，hd为遮光层400的下表面与图像传感器300的上表面之间的距离。
在本公开实施例提供的所述OLED显示面板中，为了提高成像的精度，例如指纹识别的分辨精度，需要将各开孔411设置的尽量小，但是直径太小的开孔411可能造成图像传感器300的接收面照度过低导致图像数据提取困难的情况，因此，例如，可以根据OLED显示面板的内部结构以及使用的图像传感器300的感光灵敏度设置开孔411的直径。例如，各开孔411的直径一般设置在5μm-20μm之间，例如，可以将开孔411的直径设置为5μm。
例如，在本公开实施例提供的OLED显示面板中，如图1所示，将小孔成像区域410与距离最近的OLED发光器件200之间构造为满足如下关系：小孔成像区域410与距离最近的OLED发光器件200之间的水平距离a大于小孔成像区域400与距离最近的OLED发光器件200之间的垂直距离b，以避免由于具有小孔成像区域410的遮光层400设置在各OLED发光器件200所在膜层的下方，OLED发光器件200发射出的光线可能对小孔成像区域410的成像造成影响的情况发生。
例如，本公开实施例提供的所述OLED显示面板中，如图1所示，信号 走线包括：设置于各OLED发光器件200所在膜层与衬底基板100之间的数据线600，以及直流电压信号线和栅线等。并且，控制器件中包含的薄膜晶体管的源漏极一般和数据线600以及直流电压信号线设置在同一膜层，栅极一般和栅线设置在同一层。
综合上述小孔成像区域410的成像条件等因素的考虑，以及尽可能采用遮光层400遮挡杂散光对于小孔成像的影响，以提高成像质量，例如，可以将增加的遮光层400设置于OLED发光器件200所在膜层与数据线600所在膜层之间；并且为了使得各OLED发光器件200的正常工作，如图1所示，在遮光层400设置有：用于连接数据线600所在膜层中诸如某个晶体管的漏极的其他图案(例如，漏极或包括漏极的图案)与OLED发光器件200中的阳极210的连接通孔420。
对于具有局部开孔的整面型膜层，为了防止在遮光层400的连接通孔420处可能会透过杂散光，而对小孔成像产生影响，例如，在本公开实施例提供的上述OLED显示面板中，如图1所示，可以将OLED发光器件200中的阳极210设置成具有包含遮光金属膜层的叠层结构，例如可以采用ITO/Ag/ITO的结构制作阳极210，此时OLED发光器件200的阳极210为不透光的膜层，因此，可以利用阳极210来对遮光层400中的连接通孔420进行遮挡，使OLED发光器件200中的阳极210在衬底基板100上的正投影覆盖连接通孔420的正投影，即阳极210和遮光层400在垂直于衬底基板100的方向上有重叠。
例如，在本公开实施例提供的上述OLED显示面板中，由于遮光层400为一具有局部开孔的整面型膜层，因此，可以将原本和数据线600同一膜层设置的直流电压信号线去掉，即在数据线600所在膜层包含的信号走线仅为数据线600。并且，遮光层400采用导电材料制作，利用遮光层400来实现直流电压信号线的作用，即遮光层400为用于加载直流电压信号的导电层。此时，为避免遮光层400与数据线600之间的短路，可以在遮光层400和数据线600所在膜层之间增加绝缘层700。
相比较于数据线600和直流电压信号线同层设置的情况，其中，两者均需要设置在与各OLED发光器件200之间的间隙处，导致为满足数据线600的信号传输的交流负载(RC loading)的要求，需要将数据线600制作成线宽 比较细且为减小电阻而使所在膜层比较厚，而将直流电压信号线的功能移至遮光层400，可以增大数据线600在膜层中的设置空间，减小电阻值。例如，在数据线600和直流电压信号线同层设置的情形中，数据线的线宽为2.3μm，厚度为750nm；而在将直流电压信号线的功能移至遮光层后，数据线600的线宽可以大于2.3μm，数据线600所在膜层的厚度可以小于700nm。例如，可以把数据线600的线宽做到3.5μm，数据线600所在膜层的厚度减至500nm。
进一步地，例如，在本公开实施例提供的上述OLED显示面板中，在遮光层400为用于加载直流电压信号的导电层的例子中，如图1所示，可以在遮光层400中设置在至少部分数据线上方的镂空区域430，即在保证遮光层400的膜层连续性的基础上可以在数据线600上方的遮光层400中形成开口，以减少遮光层400与数据线600的交叠电容，避免可能产生的信号信号相互干扰的现象。此时，为避免杂散光通过该镂空区域430对小孔成像产生影响，在OLED发光器件200的阳极210为不透光的膜层时，同样，可以利用阳极210来对遮光层400中的镂空区域430进行遮挡，使OLED发光器件200中的阳极210在衬底基板100上的正投影覆盖镂空区域430的正投影。
进一步地，例如，在本公开实施例提供的所述OLED显示面板中，通过增大OLED发光器件200的阳极210面积的方式，来实现遮挡通过遮光层400中的镂空区域430和连接通孔420的杂散光的效果。例如，可以仅增大OLED发光器件200中的阳极210面积以满足上述要求，即为保证发光颜色的相对比例关系，OLED发光器件200中的发光层220(EL)的面积不做改变，此时，OLED发光器件200中阳极210的面积会大于OLED发光器件200中发光层220的面积。
基于同一发明构思，本公开实施例还提供了一种显示装置，包括本公开实施例提供的所述OLED显示面板，该显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。该显示装置的实施可以参见上述OLED显示面板的实施例，重复之处不再赘述。
本公开实施例提供的所述OLED显示面板及显示装置，在OLED发光器件的下方增加图像传感器，并在图像传感器和OLED发光器件之间增加具有 至少一个小孔成像区域的遮光层，利用遮光层中与各OLED发光器件之间的间隙处对应且与信号走线和控制器件中的遮光部件错开设置的小孔成像区域，对位于OLED显示面板上方的物体在图像传感器上进行成像，当手指放置于小孔成像区域对应的OLED显示面板上方时，可以实现指纹采集和识别功能。以此方式，可以在OLED显示面板的显示区域内实现指纹识别功能，减少整个显示装置的附带区域，做到无边框设计。
以上所述，仅为本公开的示例性实施例，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。
本申请要求于2016年12月23日向SIPO提交的名称为“一种OLED显示面板及显示装置”的中国专利申请No.201611207500.8的优先权，其全文通过引用合并于本文。

Claims (14)

  1. 一种OLED显示面板，包括：
    衬底基板，
    设置于所述衬底基板一侧之上的多个OLED发光器件，
    与各所述OLED发光器件对应连接的信号走线和控制器件，
    设置于所述衬底基板另一侧或同侧的图像传感器，以及
    设置于所述图像传感器和各所述OLED发光器件所在膜层之间的具有至少一个小孔成像区域的遮光层；其中，
    所述小孔成像区域在所述衬底基板上的正投影位置设置于各所述OLED发光器件之间的间隙处，且与所述信号走线和控制器件中的遮光部件在所述衬底基板上的正投影位置错开设置；
    所述图像传感器配置来获取在所述OLED显示面板上方的物体经过所述小孔成像区域后的成像。
  2. 如权利要求1所述的OLED显示面板，其中所述小孔成像区域包括阵列排布的多个开孔。
  3. 如权利要求2所述的OLED显示面板，其中，在一个所述小孔成像区域内，相邻的两个所述开孔之间的中心距离d满足以下之一或组合关系：
    d<2*(ho+ht/2)*tan(arcsin(1/n))，d>2*(hd+ht/2)*tan(arcsin(1/n))；
    其中，n为与所述图像传感器的接收面接触的膜层的折射率，hd为所述遮光层的下表面与所述图像传感器的上表面之间的距离，ht为所述遮光层的厚度，ho为所述遮光层的上表面与所述OLED显示面板的上表面之间的距离。
  4. 如权利要求2或3所述的OLED显示面板，其中各所述开孔的直径在5μm-20μm之间。
  5. 如权利要求1所述的OLED显示面板，其中所述小孔成像区域与距离最近的所述OLED发光器件之间满足如下关系：
    所述小孔成像区域与距离最近的OLED发光器件之间的水平距离大于所述小孔成像区域与距离最近的OLED发光器件之间的垂直距离。
  6. 如权利要求1-5任一项所述的OLED显示面板，其中所述信号走线包括：设置于各所述OLED发光器件所在膜层与所述衬底基板之间的数据线；
    所述遮光层设置于所述OLED发光器件所在膜层与所述数据线所在膜层之间；
    所述遮光层还包括：配置来连接所述数据线所在膜层中的漏极或包括漏极的图案与所述OLED发光器件中的阳极的连接通孔。
  7. 如权利要求6所述的OLED显示面板，其中所述OLED发光器件中的所述阳极具有包含遮光金属膜层的叠层结构；
    所述OLED发光器件中的所述阳极在所述衬底基板上的正投影覆盖所述连接通孔的正投影。
  8. 如权利要求6所述的OLED显示面板，其中所述数据线所在膜层包含的信号走线为数据线；以及
    所述遮光层为配置来加载直流电压信号的导电层。
  9. 如权利要求8所述的OLED显示面板，其中所述遮光层还包括：设置在至少部分所述数据线上方的镂空区域；
    所述OLED发光器件中的所述阳极具有包含遮光金属膜层的叠层结构，所述阳极在衬底基板上的正投影覆盖所述镂空区域的正投影。
  10. 如权利要求8所述的OLED显示面板，其中所述数据线的线宽大于2.3μm，所述数据线所在膜层的厚度小于700nm。
  11. 如权利要求10所述的OLED显示面板，其中所述数据线的线宽为3.5μm，所述数据线所在膜层的厚度为500nm。
  12. 如权利要求7或9所述的OLED显示面板，其中所述OLED发光器件中的所述阳极的面积大于所述OLED发光器件中发光层的面积。
  13. 如权利要求1-5任一项所述的OLED显示面板，其中所述图像传感器整面设置，或仅设置在所述小孔成像区域的下方。
  14. 一种显示装置，包括如权利要求1-13任一项所述的OLED显示面板。
PCT/CN2017/088081 2016-12-23 2017-06-13 Oled显示面板及显示装置 WO2018113207A1 (zh)

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