WO2018092861A1 - 接合方法、接合装置、および保持部材 - Google Patents
接合方法、接合装置、および保持部材 Download PDFInfo
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- WO2018092861A1 WO2018092861A1 PCT/JP2017/041366 JP2017041366W WO2018092861A1 WO 2018092861 A1 WO2018092861 A1 WO 2018092861A1 JP 2017041366 W JP2017041366 W JP 2017041366W WO 2018092861 A1 WO2018092861 A1 WO 2018092861A1
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- 238000000034 method Methods 0.000 title claims abstract description 88
- 239000000758 substrate Substances 0.000 claims abstract description 721
- 238000005304 joining Methods 0.000 claims description 56
- 238000005259 measurement Methods 0.000 claims description 16
- 238000001179 sorption measurement Methods 0.000 claims description 10
- 238000005452 bending Methods 0.000 claims description 2
- 238000003466 welding Methods 0.000 claims description 2
- 230000008569 process Effects 0.000 description 35
- 230000002093 peripheral effect Effects 0.000 description 34
- 230000004913 activation Effects 0.000 description 16
- 238000009423 ventilation Methods 0.000 description 16
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 238000012937 correction Methods 0.000 description 7
- 239000012530 fluid Substances 0.000 description 7
- 230000000994 depressogenic effect Effects 0.000 description 6
- 238000003825 pressing Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000037237 body shape Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/682—Mask-wafer alignment
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
- H01L2223/5446—Located in scribe lines
Definitions
- the present invention relates to a bonding method, a bonding apparatus, and a holding member.
- Patent Document 1 Japanese Patent Application Laid-Open No. 2012-186243
- bubbles may remain between the two substrates.
- a method for bonding a first substrate and a second substrate wherein a projecting portion is formed in a partial region of the first substrate; In a state in which the protrusion is formed on the substrate, a measurement stage for measuring the position of the first substrate, and a contact region is formed by bringing the protrusion of the first substrate into contact with the surface of the second substrate.
- a bonding method including a bonding step of bonding the first substrate and the second substrate.
- a bonding apparatus for bonding a first substrate and a second substrate, a forming unit that forms a protrusion in a partial region of the first substrate, In a state in which the protruding portion is formed on the first substrate, a measurement unit that measures the position of the first substrate and a protruding portion of the first substrate are brought into contact with a part of the surface of the second substrate to form a contact region. And a joining device provided with a joined part which joins the 1st substrate and the 2nd substrate by enlarging a contact field is provided.
- a main body having a holding surface for holding a substrate and a protruding member provided on the main body and protruding at least partially from the holding surface are held by the holding surface.
- a holding member is provided that forms a protruding portion that is curved with a curvature larger than the curvature of the other area of the substrate in the partial area.
- FIG. 2 is a schematic plan view of substrates 210 and 230.
- FIG. It is a flowchart which shows the procedure which joins the board
- 5 is a schematic cross-sectional view of a substrate holder 220.
- FIG. 4 is a schematic cross-sectional view of a substrate holder 240.
- FIG. 1 is a schematic cross-sectional view of a bonding apparatus 100.
- FIG. 4 is a schematic cross-sectional view showing the operation of the bonding apparatus 100.
- FIG. 4 is a schematic cross-sectional view showing the operation of the bonding apparatus 100.
- FIG. 4 is a schematic cross-sectional view showing the operation of the bonding apparatus 100.
- FIG. 4 is a schematic cross-sectional view showing the operation of the bonding apparatus 100.
- FIG. 5 is a schematic cross-sectional view showing a bonding process of substrates 210 and 230. 4 is a schematic cross-sectional view showing the operation of the bonding apparatus 100.
- FIG. FIG. 5 is a schematic cross-sectional view showing a bonding process of substrates 210 and 230.
- FIG. 5 is a schematic cross-sectional view showing a bonding process of substrates 210 and 230.
- FIG. 5 is a schematic cross-sectional view showing a bonding process of substrates 210 and 230.
- FIG. 5 is a schematic cross-sectional view of a substrate holder 260.
- FIG. 6 is a schematic cross-sectional view showing a bonding process using a substrate holder 260.
- FIG. It is typical sectional drawing which shows the progress process of a joining wave. It is typical sectional drawing which shows the progress process of a joining wave.
- 6 is a schematic cross-sectional view showing a bonding process using a substrate holder 260.
- FIG. 6 is a schematic cross-sectional view showing a bonding process using a substrate holder 260.
- FIG. 6 is a schematic cross-sectional view showing a bonding process using a substrate holder 260.
- FIG. 6 is a schematic cross-sectional view showing a bonding process using a substrate holder 260.
- FIG. 6 is a schematic cross-sectional view showing a bonding process using a substrate holder 260.
- FIG. 6 is a schematic cross-sectional view showing a bonding process using a
- FIG. 5 is a schematic cross-sectional view of a substrate holder 270.
- FIG. 5 is a schematic cross-sectional view of a substrate holder 270.
- FIG. 5 is a schematic cross-sectional view of a substrate holder 290.
- FIG. 5 is a perspective view of a protruding member 280.
- FIG. It is a flowchart which shows the other procedure of joining. It is a typical sectional view showing the joining process using substrate holders 260 and 290. It is a typical sectional view showing the joining process using substrate holders 260 and 290. 5 is a graph for explaining a joining process using a substrate holder 270. It is a typical sectional view showing the joining process using substrate holders 260 and 290.
- FIG. 3 is a schematic cross-sectional view of a protruding member 301.
- FIG. 3 is a schematic cross-sectional view of a protruding member 302.
- FIG. 3 is a schematic cross-sectional view of a protruding member 303.
- FIG. 3 is a schematic cross-sectional view of a protruding member 304.
- FIG. 5 is a schematic cross-sectional view of a substrate holder 501.
- FIG. 5 is a schematic cross-sectional view of a substrate holder 502.
- FIG. It is a typical sectional view of substrate holder 503.
- 5 is a schematic cross-sectional view of a substrate holder 504.
- FIG. 1 is a schematic plan view of substrates 210 and 230 that are stacked and bonded to each other.
- Each of the substrates 210 and 230 has scribe lines 211 and 231, alignment marks 213 and 233, and circuit regions 214 and 234.
- a plurality of alignment marks 213 and 233 and circuit regions 214 and 234 are provided.
- the alignment marks 213 and 233 are examples of structures formed on the surfaces of the substrates 210 and 230. In the illustrated example, the alignment marks 213 and 233 are overlaid on the scribe lines 211 and 231 disposed between the circuit regions 214. The alignment marks 213 and 233 are used as an alignment index between the substrates 210 and 230 when the two substrates 210 and 230 are bonded.
- a plurality of circuit regions 214 and 234 having the same structure are periodically arranged on the surfaces of the substrates 210 and 230.
- Each of the circuit regions 214 and 234 is provided with a structure such as a semiconductor device, wiring, or a protective film formed by a photolithography technique or the like.
- Connection portions such as pads and bumps that serve as connection terminals when the substrate 210 is electrically connected to another substrate 210, a lead frame, and the like are also arranged in the circuit regions 214 and 234.
- the connection part is also an example of a structure formed on the surface of the substrate 210.
- FIG. 2 is a flowchart showing a procedure for bonding the substrates 210 and 230.
- the substrates 210 and 230 to be bonded to each other are held by holding members such as the substrate holders 220 and 240 (step S101). This protects the substrates 210 and 230 and facilitates handling.
- FIG. 3 is a schematic cross-sectional view of a substrate holder 220 that holds one substrate 210.
- the substrate holder 220 has a main body 229 and a protruding member 250.
- the main body 229 has a holding surface 221, a ventilation path 222, and a recess 223.
- the holding surface 221 has a flat surface formed on the upper surface of the main body 229 in the figure, and contacts the back surface of the substrate 210.
- the air passage 222 has a plurality of intake holes that open to the holding surface 221 at one end. Further, the other end of the air passage 222 is selectively coupled to a negative pressure source 125 and an open end 126 provided outside the substrate holder 220 via the control valve 124.
- the control valve 124 selectively connects the air passage 222 to the negative pressure source 125 or the open end 126 under the control of the control unit 150 of the joining apparatus 100 described later.
- the control valve 124 causes the air passage 222 to communicate with the negative pressure source 125, negative pressure acts on the opening of the holding surface 221 and the substrate 210 mounted on the substrate holder 220 is adsorbed.
- the control valve 124 communicates the air passage 222 with the open end 126, the adsorption force of the holding surface 221 is canceled, and thus the holding of the substrate 210 by the substrate holder 220 is released.
- the recess 223 is formed at the approximate center of the holding surface 221.
- the concave portion 223 accommodates the protruding member 250 in the inside recessed from the holding surface 221.
- the protruding member 250 has a flat bottom surface, and is fixed to the bottom surface of the recess 223 by fixing means such as an adhesive, a double-sided tape, a magnetic force, a screw, and a fitting structure. Further, the protruding member 250 has an abutting portion 251 that protrudes upward at a substantially center and uses the upper end surface in the drawing as an abutting surface with respect to the substrate 210.
- the contact portion 251 has a cylindrical shape in the illustrated example.
- the height A from the bottom surface of the protruding member 250 to the upper end of the contact portion 251 is higher than the depth B of the concave portion 223, whereby the upper end of the contact portion 251 protrudes from the surface of the holding surface 221. Therefore, when the substrate 210 is attracted to the holding surface 221, the upper end of the contact portion 251 contacts the lower surface of the substrate 210, and the region C in the central portion of the substrate 210 is moved from the lower surface toward the upper surface, that is, The region C is pushed up in the direction away from the main body 229.
- a protruding portion 215 that protrudes with a larger curvature than other regions of the substrate 210 is formed at the central portion of the substrate 210 that is attracted to the holding surface 221 and held by the substrate holder 220. That is, the protruding member 250 is an example of a forming portion that forms the protruding portion 215 by abutting against a partial region of the substrate 210 held by the holding surface 221.
- the curvature of the protruding portion 215 formed on a part of the substrate 210 by the protruding member 250 is not always constant throughout the protruding portion 215, and the protruding portion 215 is at least partially protruded from the substrate 210. It has a larger curvature than the region other than 215.
- the region other than the protruding portion 215 of the substrate 210 is flat, that is, when the curvature of the region is zero, in the substrate 210 in which the protruding portion 215 is formed by the protruding member 250, only the protruding portion 215 of the flat substrate 210 is curved. It becomes the shape which has the part which did.
- the partial curvature of the protruding portion 215 may be smaller than the curvature of the other region of the substrate 210.
- the curvature of the portion corresponding to the side surface of the cone may be zero.
- the curvature of the protrusion 215 may be smaller than the curvature of the periphery.
- the entire protruding portion 215 has a shape protruding from a virtual plane or curved surface formed by a region other than the protruding portion 215 of the substrate 210.
- the curvature of the surface of at least the tip of the protrusion 215 is at the center of the substrate 210 when viewed in a cross section when the protrusion 215 is cut along a plane passing through the apex of the protrusion 215 and along the thickness direction of the substrate 210. It is larger than the curvature of other areas.
- the curvature of the surface of the front end is such that when the front end of the protrusion 215 and the other substrate 230 come into contact with each other, the area and shape of the contact region cause poor bonding between the front end and the other substrate 230. It is a curvature when it becomes an area and shape which does not produce the bubble which is made to generate
- the height D of the projecting portion 215 is the height of the apex of the projecting portion 215 when the surface in a region other than the central portion of the substrate 210 is used as a reference, and is approximately the amount of protrusion of the contact portion 251 from the holding surface 221. Equivalent to.
- FIG. 4 is a schematic cross-sectional view of a substrate holder 240 that holds another substrate 230 to be bonded to the substrate 210.
- the substrate holder 240 has a main body 249 in which a holding surface 241 and a ventilation path 242 are formed.
- a plurality of openings communicating with the air passage 242 are arranged on the holding surface 241 of the substrate holder 240 that is flat throughout.
- One end of the air passage 242 is selectively coupled to a negative pressure source 145 and an open end 146 provided outside the substrate holder 240 via a control valve 144.
- control valve 144 is controlled by a control unit 150 of the joining apparatus 100 described later, and selectively connects the air passage 242 to the negative pressure source 145 or the open end 146.
- the substrates 210 and 220 held by the substrate holders 220 and 240 are carried into the bonding apparatus 100 together with the substrate holders 220 and 240 (step S102).
- FIG. 5 is a schematic diagram showing the structure of the bonding apparatus 100.
- FIG. 5 is also a diagram showing a state immediately after the substrates 210 and 230 are loaded in step S102.
- the joining apparatus 100 includes a frame 110, a fixed stage 121, a moving stage 141, and a control unit 150.
- the fixed stage 121 is fixed downward on the top plate 113 of the frame 110, has a holding function such as a vacuum chuck and an electrostatic chuck, and sucks and holds the substrate holder 220.
- the substrate holder 220 holding the substrate 210 is carried into the fixed stage 121 so that the surface of the substrate 210 faces downward.
- an upper microscope 122 and an upper activation device 123 fixed downward in the drawing are arranged on the lower surface of the top plate 113 on the side of the fixed stage 121.
- the upper microscope 122 can observe the upper surface of the substrate 230 on the moving stage 141 disposed to face the fixed stage 121.
- the upper activation device 123 generates plasma that cleans and activates the upper surface of the substrate 230 held on the moving stage 141.
- An X direction driving unit 131, a Y direction driving unit, and a moving stage 141 are stacked on the upper surface of the bottom plate 111 of the frame 110 in the drawing.
- the substrate holder 240 holding the substrate 230 is carried into the upper surface of the moving stage 141 so that the surface of the substrate 230 faces upward.
- the X-direction drive unit 131 moves in the direction indicated by the arrow X in the drawing in parallel with the bottom plate 111.
- the Y direction driving unit 132 moves on the X direction driving unit 131 in parallel with the bottom plate 111 in the direction indicated by the arrow Y in the drawing.
- a Z-direction driving unit 133 is disposed between the Y-direction driving unit 132 and the moving stage 141.
- the Z direction driving unit 133 moves the moving stage 141 with respect to the Y direction driving unit 132 in a direction perpendicular to the bottom plate 111 indicated by an arrow Z. Thereby, the moving stage 141 can be brought close to the fixed stage 121.
- the movement amount of the moving stage 141 by the X direction driving unit 131, the Y direction driving unit 132, and the Z direction driving unit 133 is measured with high accuracy using an interferometer or the like.
- the lower microscope 142 and the lower activation device 143 are mounted on the side of the moving stage 141 on the upper surface of the Y direction driving unit 132 in the drawing.
- the lower microscope 142 moves with the Y-direction drive unit 132 and can observe the lower surface of the downward substrate 210 held on the fixed stage 121.
- the lower activation device 143 moves with the Y-direction drive unit 132 to generate plasma that activates the substrate 210 held on the fixed stage 121 by cleaning the lower surface in the drawing.
- an activation device that replaces the upper activation device 123 and the lower activation device 143 may be provided in a location different from the bonding device 100, and the substrates 210 and 230 activated in advance may be carried into the bonding device 100.
- the joining apparatus 100 further includes a control unit 150.
- the control unit 150 controls operations of the X direction driving unit 131, the Y direction driving unit 132, the Z direction driving unit 133, the upper activation device 123, and the lower activation device 143.
- the control unit 150 calibrates the relative positions of the upper microscope 122 and the lower microscope 142 in advance. Calibration of the upper microscope 122 and the lower microscope 142 can be performed, for example, by focusing the upper microscope 122 and the lower microscope 142 on a common focus F and observing each other. Further, the common standard index may be observed with the upper microscope 122 and the lower microscope 142.
- control unit 150 moves the moving stage 141 as shown in FIG. 6 for each of the substrates 210 and 230 carried in as described above, thereby opposing the substrates 210 and 230. Is observed using the upper microscope 122 and the lower microscope 142, and thereby the positions of the plurality of alignment marks 213 and 233 are measured (step S103).
- the relative positions of the upper microscope 122 and the lower microscope 142 are calibrated in advance, the relative positions of the substrates 210 and 230 are accurately detected by this measurement.
- the substrate 210 observed by the lower microscope 142 is held on the fixed stage 121 in a state where the substrate 210 is held on the substrate holder 220 having the protruding member 250. Therefore, the lower microscope 142 observes the substrate 210 on which the protruding portion 215 is formed, and detects the position of the alignment mark 213 on the surface of the substrate 210 including the protruding portion 215.
- the protruding portion 215 is formed on the substrate 210 by the protruding member 250, and the position of the alignment mark 213 is detected in a state where the protruding portion 215 is formed.
- the protrusion 215 is formed on the substrate 210 after the position of the alignment mark 213 is detected, it is possible to suppress the displacement due to the deformation at the center of the substrate 210 after the position of the alignment mark is detected. Therefore, it is possible to suppress a decrease in alignment accuracy.
- the protruding portion 215 is formed on the substrate 210 during the holding operation of the substrate 210 to the substrate holder 220, a bonding apparatus that performs an operation of forming a protruding portion 215 by pressing a part of the substrate 210 after holding the substrate 210. Unlike the above, it is possible to avoid an increase in the number of steps for forming the protruding portion 215.
- the position of the alignment mark 213 is detected particularly in the central portion due to the deformation of the central portion of the substrate 210 due to the formation of the protruding portion 215. It will shift from the position. Further, when a pressing force is applied to form the protruding portion 215 at the central portion of the substrate 210, the region other than the central portion is pulled by the pressing force, and the position of the region other than the central portion detects the alignment mark 213. It will deviate from the position when you do. For this reason, the reliability with respect to position information falls, and the alignment precision based on the said position information falls.
- the protruding portion 215 is formed using equipment other than the substrate holder 220. Then, the substrates 210 and 230 may be stacked. Examples of such equipment include a stage device including a push rod that protrudes or retracts from the center of the holding surface.
- the control unit 150 calculates the moving direction and moving amount of the moving stage 141 necessary for alignment of the substrates 210 and 230 based on the detected relative position information of the substrates 210 and 230.
- the control unit 150 activates the surfaces of the substrates 210 and 230 by scanning the moving stage 141 while operating the upper activation device 123 and the lower activation device 143 ( Step S104).
- the surfaces of the activated substrates 210 and 230 are brought into contact with each other, they can be joined to each other without inclusions such as an adhesive, welding, and crimping.
- FIG. 9 is a schematic cross-sectional view showing the state of the substrates 210 and 230 aligned in the bonding apparatus 100.
- control unit 150 controls the control valve 144 to connect the air passage 242 of the substrate holder 240 held on the moving stage 141 to the negative pressure source 145.
- the substrate 230 is adsorbed to the holding surface 241.
- control unit 150 controls the control valve 124 so that the air passage 222 of the substrate holder 220 held by the fixed stage 121 is also communicated with the negative pressure source 125. Thereby, the substrate 210 is attracted to the holding surface of the substrate holder 220.
- control unit 150 operates the Z direction driving unit 133 to raise the moving stage 141.
- substrate 230 raises and the board
- FIG. 11 is a schematic cross-sectional view showing a state in which the substrates 210 and 230 are in contact with each other in the bonding apparatus 100.
- the substrate 210 held on the fixed stage 121 is formed with a protruding portion 215 protruding downward in the figure. Therefore, when the substrates 210 and 230 approach each other due to the movement stage 141 rising, first, the protruding portion 215 contacts the surface of the substrate 230.
- the tip of the protruding portion 215 surely contacts the surface of the substrate 230 first in the entire region of the lower surface of the substrate 210. . At this time, it is preferable to bring the tip of the protrusion 215 into contact with the center of the surface of the substrate 230. Since the surfaces of the substrates 210 and 230 have already been activated in step S104, a joining start point 209 where a part of the substrates 210 and 230 is joined by contact is formed at the contact point of the substrates 210 and 230 (step S104). S106: FIG. 2).
- the joining start point 209 is a contact area that is an area where the substrates 210 and 230 are in contact with each other, and is a contact area that is formed when bonding is started.
- the joining starting point 209 may be a region having an area.
- the starting point of bonding between the pair of substrates 210 and 230 to be bonded is that by pressing a part of the substrate 210 against a part of the substrate 230, an atmosphere or the like sandwiched between the substrates 210 and 230 is pushed out. , 230 are formed in direct contact with each other.
- This contact causes the activated contact region of the two substrates 210 and 230 to be bonded by a chemical bond such as a hydrogen bond.
- the controller 150 maintains the state where the two substrates 210 and 230 are in contact with each other.
- the contact area may be expanded by pressing the substrates 210 and 230 together to increase the part of the contact area.
- control unit 150 controls the control valves 124 and 144 so that the air passages 222 and 242 of the substrate holders 220 and 240 are both communicated with the negative pressure source 125. Therefore, the substrates 210 and 230 are adsorbed by the substrate holders 220 and 240, respectively, and contact with the substrates 210 and 230 at portions other than the bonding start point 209 is suppressed.
- a bonding force having a magnitude that does not cause displacement between the substrates 210 and 230 in the process of bonding the two substrates 210 and 230 is between the two substrates 210. Secured. Thereby, the starting point of bonding is formed in a part of the substrates 210 and 230 in contact with each other.
- control unit 150 switches the control valve 124 on the fixed stage 121 side so that the air passage 222 of the substrate holder 220 communicates with the open end to the atmospheric pressure. Accordingly, the holding of the substrate 210 by the substrate holder 220 is released (step S107), and the substrates 210 and 230 are autonomously bonded to each other by the intermolecular force between the activated surfaces.
- the contact area where the substrates 210 and 230 are bonded gradually increases from the bonding start point 209 toward the radially outer side of the substrates 210 and 230.
- a joining wave in which the joining region sequentially expands is generated, and the joining of the substrates 210 and 230 proceeds (step S108).
- FIG. 13 is a schematic cross-sectional view showing a state in which the progress of the bonding wave of the substrates 210 and 230 as described above is completed, and is shown from the same viewpoint as FIGS.
- the substrates 210 and 230 are in contact with each other over the entire surface and further bonded.
- the bonding of the substrates 210 and 230 is completed (step S109), and the two substrates 210 and 220 become an integrated laminated substrate 201.
- the bonding apparatus 100 includes the moving stage 141 and the fixed stage 121 that are holding parts for holding the two substrates 210 and 230 including the substrate 210 on which the protruding part 215 is formed, and the protruding part of one of the substrates 210. 215 is brought into contact with the other substrate 230 to form a bonding start point 209, and further, a contact region is enlarged from the bonding start point 209 to form a bonding portion for bonding the substrates 210 and 230.
- step S106 The adsorption of the substrate 210 by the substrate holder 240 adsorbed on the upper fixed stage 121 in the drawing has already been canceled in step S106. Therefore, the formed laminated substrate 201 is held by the substrate holder 240 held by the moving stage 141. Thereafter, the laminated substrate 201 is carried out from the bonding apparatus 100 (step S110). However, the laminated substrate 201 may be carried out by releasing the holding by the substrate holder 240 first and carrying out the laminated substrate 201 alone. The laminated substrate 201 may be separated from the substrate holder 240 after being carried out together with the substrate holder 240 while being held by the substrate holder 240.
- the substrates 210 and 230 having the circuit region 214 and the like are aligned and bonded.
- a glass substrate and a semiconductor substrate in which the circuit region 214 or the like is not formed may be bonded using the bonding apparatus 100.
- the position measurement in step S103 and the alignment in step S105 may be omitted.
- FIG. 14, FIG. 15 and FIG. 16 are diagrams for explaining misalignment between the substrates 210 and 230 that occur in the process in which the bonding wave advances from the bonding start point 209 toward the outer periphery in the bonding of the substrates 210 and 230.
- the boundary K between the bonding region and the non-bonding region of the substrates 210 and 230, that is, the vicinity of the tip of the bonding wave is enlarged.
- the positional deviation is a deviation from a predetermined relative position between the alignment marks 213 corresponding to each other between the two substrates 210 and 230 or between the corresponding connecting portions.
- the connecting portions do not contact each other, or appropriate electrical conduction cannot be obtained, or a predetermined bonding strength cannot be obtained between the bonding portions.
- the substrate 210 released from being held by the substrate holder 220 is deformed so as to expand on the lower surface side in the drawing and contract on the upper surface side in the drawing. Further, as shown in FIG. 15, when the position of the boundary K moves in the substrates 210 and 230, the place where the above deformation occurs also moves together with the boundary K.
- the elongation of the substrate 210 is fixed by being bonded to the substrate 230, and the substrate 210 is enlarged with respect to the substrate 230. As if. For this reason, the amount of elongation of the substrate 210 increases between the lower substrate 230 held by the substrate holder 240 and the upper substrate 210 released from the substrate holder 220 so as to appear as a dotted line deviation in the drawing. Corresponding misalignment occurs.
- the above-described positional deviation is accumulated toward the outer circumferences of the substrates 210 and 230, and the positional deviation increases as the outer circumference approaches.
- FIG. 17 is a schematic cross-sectional view of the substrate holder 260 prepared as a countermeasure against misalignment that occurs during the joining process as described above.
- the substrate holder 260 has a main body 269 including a holding surface 261 and a ventilation path 262.
- the holding surface 261 of the substrate holder 260 has a cross-sectional shape in which the height gradually increases from the peripheral portion toward the central portion, and in the illustrated example, the thickness gradually increases from the peripheral portion toward the central portion. It has a cross-sectional shape. Thereby, the holding surface 261 forms a spherical surface, for example.
- the holding surface 261 is provided with a plurality of openings that communicate with the air passage 262.
- One end of the ventilation path 262 is coupled to a negative pressure source 145 and an open end 146 provided outside the substrate holder 260 via a control valve 144.
- the shape of the holding surface 261 is not limited to a spherical surface.
- a curved surface obtained by rotating a parabola around its axis of symmetry or a part of a parabola or cylinder along the central axis. It may have a non-rotating body shape, such as a cylindrical surface that is an outer peripheral surface when cut.
- the substrate 230 is adsorbed to the substrate holder 260 when the control valve 144 causes the air passage 242 to communicate with the negative pressure source 145 under the control of the control unit 150. Since the holding surface 261 of the substrate holder 260 is a curved surface, the substrate 230 adsorbed on the substrate holder 260 is curved following the shape of the holding surface 261.
- the surface that is the upper surface in the drawing of the substrate 230 is the center of the substrate 210 in the thickness direction of the substrate 210 indicated by the alternate long and short dash line in the drawing. Is expanded and deformed in the surface direction from the edge toward the periphery. Further, the back surface, which is the lower surface of the substrate 230 in the drawing, is reduced and deformed in the surface direction from the center of the substrate 230 toward the peripheral portion.
- FIG. 18 is a schematic cross-sectional view showing a case where the substrate holder 260 is used to hold the substrate 230 on the moving stage 141 side in the bonding apparatus 100.
- the state shown in the figure corresponds to the stage where the bonding start points 209 are formed on the substrates 210 and 230 in step S106 shown in FIG.
- the substrate 210 held by the upper substrate holder 220 in the figure has a local protrusion 215 formed by the contact portion 251 of the protruding member 250. Therefore, when the substrates 210 and 230 are brought into contact with each other, the joining start point 209 is more reliably formed at one point in the approximate center of the protruding portion 215 than when the holding surface 261 of the substrate holder 260 is flat.
- step S108 FIG. 2
- the magnification of the upper surface of the substrate 230 held by the substrate holder 260 having the raised holding surface 261 is increased by following the curved shape of the holding surface 261. For this reason, when the substrate 210 is released from the holding by the substrate holder 240 and joined to the substrate 230 while the substrate 210 is deformed, the deformation of the substrate 210 is offset by the curved deformation of the substrate 230, and the positional deviation between the substrates 210 and 230 occurs.
- the laminated substrate 201 can be formed without generating the above.
- magnification is the difference (X 1 ⁇ X 0) when the structure located at the distance X 0 from the center of the substrate is positioned at the distance X 1 from the center in the actually manufactured substrate. ) is a value obtained by dividing the distance X 0 a.
- the magnification is expressed in units of ppm (Parts Per Million), for example.
- the substrate holder 260 with the center of the holding surface 261 raised is used.
- the surface of the held substrate 230 is contracted, The magnification can also be reduced.
- substrate 230 can also be suppressed according to it.
- the curvature of the substrate holder 240 that holds the opposing substrate 230 may be adjusted according to the amount of protrusion by which the protruding member 250 of the substrate holder 220 protrudes from the holding surface 221. More specifically, for example, when using the substrate holder 240 having the projecting member 250 having a larger height, the substrate holder 240 whose central side is raised with a larger curvature may be selected and used.
- FIG. 20 is a diagram for explaining another countermeasure against misalignment that occurs during the joining process.
- the state shown in the figure shows a state in which a bonding wave is traveling between the substrates 210 and 230 (step S108: FIG. 2).
- the lower substrate 230 is held on the substrate holder 240 having the flat holding surface 241, the upper substrate 210 is released from the holding of the substrate holder 220, and the lower substrate 230 is also removed from the substrate holder 240. Release from holding. Due to the pulling force from the upper substrate 210, the lower substrate 230 is lifted from the substrate holder 240 and curved. As a result, the shape changes so that the surface of the lower substrate 230 extends, so that the difference from the amount of extension of the surface of the upper substrate 210 is reduced by this amount of extension. Therefore, a positional shift caused by different deformation amounts between the two substrates 210 and 230 is suppressed.
- the bending amount that is, the elongation deformation amount of the substrate 230
- the positional deviation of the substrates 210 and 230 can be suppressed.
- the bonding starting point 209 is formed at an unexpected position of the substrates 210 and 230 and air bubbles from remaining in the laminated substrate 201.
- the laminated substrate 201 may be held again by any of the substrate holders 220 and 240.
- the holding force may be weakened instead of completely disappearing.
- the magnification of the substrate 230 can also be adjusted by adjusting the holding force of the substrate 230 by the substrate holder 240, and the positional deviation due to the magnification difference from the substrate 210 can be corrected.
- FIG. 21, FIG. 22, FIG. 23, and FIG. 24 show other substrates 210 and 230 that use the bonding apparatus 100 shown in FIG. 5, the substrate holder 220 shown in FIG. 3, and the substrate holder 260 shown in FIG. It is a figure which shows the joining method. The overlapping individual description about the member to be used is omitted.
- the substrate holder 220 that holds the substrate 210 and is carried into the bonding apparatus 100 is held by the moving stage 141.
- a substrate holder 260 that holds the substrate 230 and is carried into the bonding apparatus 100 is held by the fixed stage 121.
- step S103 After position measurement (step S103), substrate activation (step S104), and substrate alignment (step S105), the substrate 210 on which the protruding portion 215 is formed is lifted by the moving stage 141 as shown in FIG. In this way, the joining start point 209 is formed (step S106). Further, as shown in FIG. 23, the holding of the substrate 210 by the substrate holder 220 is released (step S107), and the bonding wave is advanced (step S108).
- the substrate 210 released from the holding of the substrate holder 220 located on the lower side in the drawing is bonded to the substrate 230 held on the upper substrate holder 240 in the drawing, As shown in FIG. 24, a laminated substrate 201 is formed.
- the lower substrate 210 can be released to form the laminated substrate 201.
- FIG. 25 is a schematic cross-sectional view of another substrate holder 270 having a flat holding surface 271. The figure shows a state in which the substrate holder 270 holds the substrate 210 and is further held by the fixed stage 121.
- the substrate holder 270 has a main body portion 279 and a protruding member 250. Since the shape of the protrusion member 250 and the concave portion 273 of the holding surface 271 that accommodates the protrusion member 250 is the same as the protrusion member 250 and the concave portion 223 of the substrate holder 220 shown in FIG.
- the main body 279 has two air passages 272 and 274 that are independent of each other.
- One air passage 272 has a plurality of openings arranged on the outer peripheral side of the holding surface 271.
- the other end of the air passage 272 is coupled to the negative pressure source 125 and the open end 126 provided outside the substrate holder 270 via the control valve 124.
- the control valve 124 selectively connects the air passage 272 to the negative pressure source 125 or the open end 126 under the control of the control unit 150 of the joining apparatus 100.
- control valve 124 causes the air passage 272 to communicate with the negative pressure source 125, negative pressure acts on the opening of the holding surface 271, and the substrate 210 is adsorbed on the outer peripheral side of the holding surface 271.
- the air passage 272 communicates with the open end 126 by the control valve 124, the adsorption of the substrate 210 on the holding surface 271 of the substrate holder 270 is released.
- the other ventilation path 274 has a plurality of openings arranged around the recess 273 in which the protruding member 250 is accommodated on the holding surface 271.
- the other end of the ventilation path 274 is coupled to a negative pressure source 128 and an open end 129 provided outside the substrate holder 270 via a control valve 127.
- the control valve 127 selectively connects the air passage 274 to the negative pressure source 128 or the open end 129 under the control of the control unit 150 of the joining apparatus 100.
- control valve 127 When the control valve 127 causes the air passage 274 to communicate with the negative pressure source 128, negative pressure acts on the opening of the holding surface 271, and the substrate 210 is adsorbed to the holding surface 271 around the recess 273.
- the control valve 127 communicates the air passage 274 with the open end 129, the adsorption of the substrate 210 is released around the recess 273.
- both the air passages 272 and 274 are both communicated with the negative pressure sources 125 and 129, and the substrate 210 is adsorbed by the entire holding surface 271. .
- the protruding portion 215 is formed on the substrate 210 in the region T where the contact portion 251 contacts.
- FIG. 26 is a diagram showing the next stage. This stage is executed after the stage where the substrate holder 270 holds the substrate 210 (step S101) and before the stage where the position measurement with respect to the substrate 210 is started (step S103).
- the controller 150 may control the control valve 127 to connect the air passage 274 to the open end 129 before starting the position measurement of the alignment mark 213 on the substrate 210.
- the curvature at the tip of the protruding portion 215 of the substrate 210 is reduced, and the amount of deformation of the surface of the side substrate 210 which is the lower surface in the drawing is also reduced. Therefore, the central portion of the substrate 210 due to the formation of the protruding portion 215 is reduced. Surface deformation is alleviated.
- the step of communicating the air passage 274 with the open end 129 is not essential, and the measurement in step S103 may be started while the air passage 274 is connected to the negative pressure source 145.
- step S103 the position measurement of the alignment mark 213 is executed. Accordingly, the position of the alignment mark 213 in the state where the substrate 210 is attracted to the holding surface 271 in the central portion of the substrate 210, that is, in the state where the protruding portion 215 is formed in the central portion of the substrate 210, and the holding surface 271. Since the difference from the position of the alignment mark 213 when the substrate 210 is bonded to the substrate 230 is reduced, the alignment accuracy of the substrates 210 and 230 can be improved.
- FIG. 27 is a schematic cross-sectional view of another substrate holder 290.
- the substrate holder 290 has a main body 299 and a protruding member 280.
- the main body 299 has a holding surface 291, air passages 292 and 294, and a recess 293.
- the holding surface 291 has a flat surface on the upper surface of the main body 299 in the drawing.
- a concave portion 293 that is recessed from the holding surface 291 is provided in the center of the holding surface 291.
- the main body 299 has a plurality of ventilation paths 292 and 294 penetrating in the thickness direction.
- One air passage 292 has a plurality of openings distributed over the entire region other than the central portion of the holding surface 291.
- the other end of the air passage 292 is coupled to a negative pressure source 145 and an open end 146 provided outside the substrate holder 290 via a control valve 144.
- the control valve 124 is selectively communicated with the negative pressure source 145 or the open end 146 through the air passage 292 under the control of the control unit 150 of the joining apparatus 100.
- control valve 144 When the control valve 144 communicates the air passage 292 with the negative pressure source 145, a negative pressure acts on the opening of the holding surface 291, so that the substrate 210 is adsorbed on the holding surface 291 of the substrate holder 290.
- the control valve 144 communicates the air passage 292 with the open end 146, the suction force of the holding surface 291 is canceled, and the suction of the substrate 210 to the holding surface 291 of the substrate holder 220 is released.
- the other ventilation path 294 has one end that opens to the bottom of the recess 293.
- the other end of the air passage 294 is coupled to a negative pressure source 148 and an open end 149 provided outside the substrate holder 290 via a control valve 147.
- the control valve 124 selectively connects the air passage 222 to the negative pressure source 125 or the open end 126 under the control of the control unit 150 of the joining apparatus 100.
- FIG. 28 is a perspective view of the protruding member 280.
- the protruding member 280 has an abutting portion 281, a peripheral wall portion 282, and an air passage 284.
- the protruding member 280 is also an example of a forming portion that forms the protruding portion 215 in a partial region of the substrate 210.
- the abutting portion 281 is disposed at the tip of the protrusion protruding upward in the figure at the center of the protrusion member 280.
- the peripheral wall portion 282 is annularly arranged along the outer periphery of the protruding member 280. Thereby, a groove 283 is formed between the contact portion 281 and the peripheral wall portion 282.
- the air passage 284 opens at one end inside the groove 283 and penetrates to the lower surface of the protruding member 280.
- the air passage 284 communicates with the air passage 294 of the main body 299. Therefore, when the control valve 147 communicates the air passage 294 with the negative pressure source 148, the negative pressure acts on the inside of the groove portion 283 of the protruding member 280, so that the substrate 210 is adsorbed to the groove portion 283. That is, the groove portion 283 is an example of a suction portion that sucks the substrate 210.
- the control valve 147 communicates the air passage 294 with the open end 149, the suction force in the groove 283 of the protruding member 280 is eliminated.
- the protruding member 280 In a state where the protruding member 280 is housed in the recess 293 of the main body 299, at least a part of the contact part 281 and at least a part of the peripheral wall part 282 protrude from the holding surface 291. In the illustrated example, the height of the peripheral wall portion 282 is lower than the contact portion 281.
- the height G of the peripheral wall portion 282 of the protrusion member 280 is larger than the depth H of the concave portion 293, and the upper end of the peripheral wall portion 282 in the figure protrudes from the holding surface 291.
- the height J of the contact portion 281 is higher than the peripheral wall portion 282 in the illustrated example, and the upper end of the contact portion 281 in the figure further protrudes from the peripheral wall portion 282.
- FIG. 29 is a flowchart showing a bonding procedure of the substrates 210 and 230 using the bonding apparatus 100 shown in FIG. 5, the substrate holder 260 shown in FIG. 17, and the substrate holder 290 shown in FIG. Of the procedure shown in FIG. 29, the same operation as the procedure shown in FIG.
- the substrates 210 and 230 are held by the substrate holders 290 and 260, respectively (step S101).
- the substrate holder 290 adsorbs the substrate 210 by both the air passage 292 of the main body 299 and the groove 283 of the protruding member 280.
- the region other than the central portion of the substrate 210 is attracted to the holding surface 291 of the main body 299. Further, a part of the central portion of the substrate 210 abuts on the abutting portion 281 of the protruding member 280, so that a protruding portion 215 is formed at the central portion. Further, a part of the outer peripheral portion of the protruding portion 215 abuts on the upper end of the peripheral wall portion 282 of the protruding member 280, whereby the central portion of the substrate 210 is attracted to the groove portion 283.
- step S102 the substrates 210 and 230 held by the substrate holders 290 and 260 are carried into the bonding apparatus 100 as shown in FIG. 30.
- the substrate holder 290 that holds one substrate 210 is loaded into the moving stage 141, and the substrate holder 260 that holds the other substrate 230 is loaded into the fixed stage 121.
- step S103 After the position measurement (step S103), substrate activation (step S104), and substrate alignment (step S105) are performed, the controller 150 switches the control valve 144 as shown in FIG.
- the air passage 292 of the holding surface 291 is communicated with the open end 146. Thereby, the adsorption
- the substrate 210 may be positively separated from the holding surface 291 by ejecting a fluid onto the surface of the holding surface 291 through the air passage 292. Thereby, release of the substrate 210 can be promoted, and the time required to proceed to the next step can be shortened. Further, the substrate 210 is pushed away from the holding surface 291 by the ejected fluid, so that the deformation of the substrate 210 in the protruding portion 215 can be reduced.
- FIG. 32 is a graph showing a change in the cross-sectional shape of the protruding portion 215 of the substrate 210 held by the substrate holder 290.
- the protruding portion 215 of the substrate 210 where the pushing-up force stops working does not change the height of the protruding portion 215 as indicated by the arrow Y, as shown by the curve in FIG.
- the curvature of the tip of the protrusion 215 is larger than the curve R and smaller than the curve P.
- the curvature is lower than that in the case of the curve P where no positive fluid is ejected, and the deformation of the substrate 210 at the protrusion 215 is alleviated.
- the amplitude of the vibration of the substrate is increased.
- the substrates 210 and 230 become a size that does not contact at a portion other than the center, or the traveling speed of the bonding wave changes due to the vibration of the substrate, the deviation amount between the substrates 210 and 230 becomes an allowable value. You may wait until it is large enough not to exceed.
- step S111 the substrate holder 290 continues to adsorb the substrate 210 by the groove 283 of the protruding member 280. Therefore, the protruding portion 215 is still formed on the substrate 210 by the contact portion 281.
- the control unit 150 raises the moving stage 141 by the Z-direction driving unit 133 to bring the protruding portion 215 of the substrate 210 into contact with the other substrate 230 to form the bonding start point 209. (Step S106).
- the outer peripheral portion of the substrate 210 is released from being held by the holding surface 291, but the adsorption force by the protruding member 280 acts in a direction to move the substrate 210 away from the substrate 230. For this reason, even if the junction starting point 209 is formed on the substrates 210 and 230, the contact area is prevented from being expanded as it is.
- control unit 150 causes the air passages 294 and 284 to communicate with the open end 149 by the control valve 147.
- the adsorption of the substrate 210 by the protruding member 280 is released (step S107), and the bonding wave in the substrates 210 and 230 advances (step S108).
- the control unit 150 maintains the state in which the contact portion 281 of the protruding member 280 presses the substrate 210 against the substrate 230 so that the positional deviation between the substrates 210 and 230 does not occur during the progress of the bonding wave.
- the position of the moving stage 141 is controlled.
- step S106 when the substrate 210 in which the outer peripheral side is not held comes into contact with the substrate 230 to form the bonding start point 209, the outer peripheral side of the substrate 210 may vibrate. If the next step is performed while leaving vibration on the substrate 210, the alignment accuracy of the substrates 210 and 230 may be affected. Therefore, as described above, the substrate is sufficiently vibrated as described above. You can wait until it gets smaller.
- step S ⁇ b> 109 the formed multilayer substrate 201 is unloaded from the joining apparatus 100.
- the protruding member 280 may be provided with an adsorption function, and the bonding process of the substrates 210 and 230 may be finely controlled.
- the height J of the contact portion 281 in the protruding member 280 is larger than the height G of the peripheral wall portion 282.
- the height J of the contact portion 281 may be the same as the height G of the peripheral wall portion 282.
- FIG. 35 is a table showing a correspondence relationship between the substrate holders 220, 240, 260, 270, and 290 used for bonding the substrates 210 and 230 and the bonding procedure shown in FIGS.
- a holder without a protruding member refers to the flat substrate holder 240 shown in FIG. 4 or the like, the substrate holder 260 having the curved holding surface 261 shown in FIG.
- a holder with a protruding member means a substrate holder 220 having the protruding member 250 shown in FIG. 3 and the like, and a substrate holder having the protruding member 280 having the peripheral wall portion 282 shown in FIG. 290 etc.
- the “procedure of FIG. 2” means a procedure in which the release of holding the substrate 230 in the substrate holders 240 and 260 (step S107) is executed exclusively on the holding surfaces 241 and 261.
- “procedure of FIG. 29” refers to releasing the holding of the substrate 210 by the substrate holders 220 and 280 at different stages of the holding surfaces 241 and 261 (step S111) and the protruding member 280 (step S112). Means the procedure to be executed.
- “continue holding” means that holding of the substrate 230 is continued until the bonding is completed. Note that if the substrate holders 220 and 240 on both the fixed stage 121 side and the moving stage 141 side do not release the holding of the substrates 210 and 220, the substrates 210 and 220 are not bonded, so there is a suitable bonding procedure. do not do. Further, in the case where the substrate holder 290 having the projecting member 280 is not used on either side, there is no room for selection of the procedure, and therefore the conformity is not described in the illustrated table.
- the procedure shown in FIG. 29 can be executed. Further, even when the substrate holder 290 having the protruding member 280 is continuously held by the substrate 210 and the holding of the substrate 230 is released on the side of the substrate holder 240 without the protruding member 280, the substrates 210 and 220 can be bonded. it can. Furthermore, as described with reference to FIG. 20, by canceling the holding of both the substrates 210 and 230 and proceeding the joining, it is possible to suppress the positional deviation due to the magnification changing in the joining process.
- the substrate holder 290 that can adsorb the substrate 210 with the protruding member 280 and can suppress the progress of the bonding wave is used, the substrate holder 290 is held on the fixed stage 121 side, and the substrate 210 is moved to gravity. In the case where the substrate is held downward, there may be a case where the substrate bonding cannot be completely suppressed only by the suction near the center of the substrate by the protruding member 280. Therefore, when the substrate holder 290 with the protruding member 280 is used on the fixed stage 121 side, the procedure shown in FIG. 2 may be applied.
- the released substrate does not deform following the protrusion of the fixed substrate.
- joining in a protrusion part may not be performed appropriately.
- the entire substrate may be bonded by the method described below.
- One method is a method in which a substrate holder with projection members is used for both stages, and the substrates are released from both substrate holders in a state where the projection members of both substrate holders are in contact with each other.
- the projecting members of both substrate holders are movable as described later, and after the projecting portions of the two substrates are brought into contact with each other, the projecting amounts of the projecting members are reduced so that the projecting amounts of both projecting members are reduced.
- the air passages 222, 242, 262, 272, 274, 284, 294, 322, 331, 332, 352, 382, 292 of the substrate holders 220, 240, 260, 270, 290 etc. are connected to the open end 129. 146, 149 communicated to release the holding of the substrates 210, 220.
- the substrates 210, 220 are activated by communicating the vents 222, 242, 262, 272, 274, 284, 294, 322, 331, 332, 352, 382, 292 to a pressure source that produces positive pressure. May be released.
- the timing of applying a positive pressure to the substrates 210 and 220 is the same as that of the substrates 210 and 220.
- step S111 when the holding by the holding surface is released (step S111) or a time point when the holding by the protruding member 280 is released (step S112).
- step S111 when a positive pressure is applied when the holding by the holding surface is released (step S111) before the two substrates 210 and 220 contact each other, the substrates 210 and 220 are caused by the fact that the positive pressure is applied. It is possible to prevent impacts, vibrations, and the like that occur on the measurement from affecting measurement such as alignment.
- FIG. 36 and 37 are schematic cross-sectional views showing the structure and usage of a substrate holder 296 that can be used instead of the substrate holder 290.
- FIG. Elements common to the substrate holder 290 are denoted by the same reference numerals, and redundant description is omitted.
- the main body 298 of the substrate holder 296 has a shape in which the center portion is depressed and gradually becomes thicker toward the outer periphery, and is carried into the moving stage 141 on the lower side in the drawing.
- a substrate holder 260 having a main body 269 that is thick at the center and thins toward the outer periphery is held together with the substrate 230 on the fixed stage 121 that faces the moving stage 141.
- the substrates 230 and 210 held on the holding surfaces 261 and 297 in each of the substrate holders 260 and 296 are substantially the same.
- Complementary shape In the example shown in the figure, a protrusion member 280 is provided on the substrate holder 260, whereby a protrusion 215 is formed at the center of the substrate 210.
- the curvature of the tip of the protrusion 215 is larger than the curvature of the holding surface 297 of the substrate holder 296, that is, the curvature of the region other than the region where the protrusion 215 of the substrate 210 is formed.
- the correction range is increased by correcting each of the substrate holders 260 and 296 rather than correcting the substrate holder 260 alone.
- the correction pitch can be reduced.
- FIG. 38 is a partial cross-sectional view showing the structure of another substrate holder 401.
- the substrate holder 401 includes a main body 319 and a protruding member 301.
- the main body 319 has a recess 313 in a part of the flat holding surface 311.
- the bottom surface of the recess 313 penetrates the main body 319 in the thickness direction.
- a rib portion 312 that protrudes inward is disposed on the inner surface of the recess 313.
- the protruding member 301 includes a contact member 320, an intermediate member 330, and a nut 340.
- the contact member 320 has a disk-like shape as a whole, and has a ventilation path 322 that penetrates in the thickness direction. Further, the contact member 320 has a contact portion 321 protruding from the upper surface. As will be described later, when the protruding member 301 is fixed inside the recess 313, the contact portion 321 protrudes from the holding surface 311. Thereby, the abutting portion 321 can form the protruding portion 215 on the substrate 210 held by the holding surface 311. That is, the protruding member 301 is an example of a forming portion that forms the protruding portion 215 in a partial region of the substrate 210.
- the intermediate member 330 supports the abutting member 320 at the upper end, and brings the flange-shaped portion provided at the upper end in the figure into contact with the upper surface of the rib portion 312 of the main body portion 319, thereby allowing the intermediate member 330 to enter the recess 313. stay.
- a screw thread 333 is disposed at the outer peripheral lower end of the intermediate member 330.
- the contact member 320 is fixed to the intermediate member 330 by an adhesive, a double-sided tape, screwing, or the like.
- the intermediate member 330 has a ventilation path 331 formed horizontally on the upper surface and a ventilation path 332 that penetrates the center in the height direction.
- the ventilation paths 331 and 332 communicate with the ventilation path 322 of the contact member 320 supported on the upper surface of the intermediate member 330 and are connected to a negative pressure source (not shown). Thereby, in the substrate holder 401, the substrate 210 can be adsorbed even inside the recess 313.
- the nut 340 has a screw thread 343 that is screwed with the screw thread 333 of the intermediate member 330 on the inner surface.
- the nut 340 has an outer diameter larger than the inner diameter of the rib portion 312 of the main body portion 319. Accordingly, by screwing the nut 340 from the lower end of the intermediate member 330, the protruding member 301 can be fixed to the main body 319 with the intermediate member 330 and the nut 340 sandwiching the rib portion 312. Further, the protruding member 301 can be removed from the main body 319 by loosening the nut 340.
- FIG. 39 is a cross-sectional view showing the structure of another protruding member 302 that can be attached to the main body 319 of the substrate holder 401 instead of the protruding member 301.
- the protruding member 302 includes a contact member 350, an intermediate member 330, and a nut 340.
- the intermediate member 330 and the nut 340 are the same as those of the protruding member 301.
- the contact member 320 has a disk-like shape as a whole, and has projections in that it has an air passage 352 penetrating in the thickness direction and a contact portion 351 protruding from the upper surface.
- the member 301 has a common structure with the contact member 320.
- the contact member 350 further has a shape different from the contact member 320 in that it has a peripheral wall portion 353 provided around the contact portion 351.
- the peripheral wall portion 353 protrudes from the holding surface 311 when the protruding member 302 is fixed inside the concave portion 313.
- the protruding amount is smaller than that of the contact portion 351.
- the abutting portion 351 abuts to form a protruding portion 215 on the substrate 210, and the abutting portion 351 and the peripheral wall portion 353.
- the outer periphery of the protrusion 215 can be adsorbed by reducing the pressure between the two. That is, the protruding member 302 is an example of a forming portion that forms the protruding portion 215 in a partial region of the substrate 210.
- the substrate holder 401 can be used for bonding substrates by different methods by exchanging the protruding members 301 and 302. Thereby, the operation rate of the expensive main-body part 319 can be improved and the productivity of the multilayer substrate 201 can be improved. Furthermore, a plurality of projecting members having different contact portion heights may be prepared so that the protrusion amount of the contact portion can be adjusted. In this case, the projecting member is replaced according to the target bonding strength between the substrates 210 and 230, the degree of activation of the surfaces of the substrates 210 and 230, the amount of correction of the positional deviation between the substrates 210 and 230, and the like. Also good.
- FIG. 40 is a partial cross-sectional view showing the structure of another substrate holder 402.
- the substrate holder 402 includes a main body 319 and a protruding member 303.
- the main body 319 has a recess 313 in a part of the flat holding surface 311.
- the bottom surface of the recess 313 penetrates the main body 319 in the thickness direction.
- a rib portion 314 that protrudes inward is disposed on the inner surface of the recess 313.
- the protruding member 303 includes a contact member 320, an intermediate member 330, and a ring member 360. Similar to the contact member 320 of the projection member 301, the contact member 320 has a disk-like shape as a whole and includes a ventilation path 322 that penetrates in the thickness direction. Further, the contact member 320 has a contact portion 321 protruding from the upper surface. When the protruding member 303 is fixed to the concave portion 313 of the main body 319, the contact portion 321 protrudes from the holding surface 311. Thereby, the abutting portion 321 can form the protruding portion 215 on the substrate 210 held by the holding surface 311. That is, the protruding member 303 is an example of a forming portion that forms the protruding portion 215 in a partial region of the substrate 210.
- the intermediate member 330 supports the contact member 320 at the upper end.
- the contact member 320 is fixed to the intermediate member 330 by an adhesive, a double-sided tape, screwing, or the like.
- the intermediate member 330 is provided at the upper end in the figure, and is dropped downward from the inside of the recess 313 by bringing a flange-shaped portion that expands toward the side into contact with the upper surface of the rib portion 314 of the main body 319. To prevent it.
- the intermediate member 330 shown in FIG. 40 has a portion extending downwardly shorter than the intermediate member 330 in the protruding member 301 of FIG. As a result, the lower end of the intermediate member 330 is positioned inside the recess 313 and extends to substantially the same height as the lower surface of the rib portion 314.
- the intermediate member 330 has an air passage 331 formed horizontally on the upper surface and an air passage 332 that penetrates the center in the height direction.
- the ventilation paths 331 and 332 communicate with the ventilation path 322 of the contact member 320 supported on the upper surface of the intermediate member 330 and are connected to a negative pressure source (not shown).
- the ring member 360 includes a cylindrical guide portion 361 inserted inside the intermediate member 330 and a flange portion 362 that extends from the lower end of the guide portion 361 in the radial direction of the guide portion 361. Therefore, when the protrusion member 303 is fixed to the main body 319, the guide member 361 of the ring member 360 is inserted from the lower side into the intermediate member 330 inserted into the recess 313 from the upper side in the drawing, and the intermediate member 330 and the ring member 360 are inserted.
- the rib portion 314 of the main body portion 319 is sandwiched between the flange portions.
- an adhesive 370, a magnet, or the like can be used for fixing the intermediate member 330 and the ring member 360.
- the substrate holder 402 has a simple structure and a small number of assembly steps.
- the ring member 360 may be omitted, and the intermediate member 330 may be directly fixed to the rib portion 314 using an adhesive or the like.
- FIG. 41 is a partial cross-sectional view showing the structure of another substrate holder 403.
- the substrate holder 403 includes a main body 319 and a protruding member 304.
- the main body 319 has a recess 313 in a part of the flat holding surface 311.
- the bottom surface of the recess 313 penetrates the main body 319 in the thickness direction.
- a rib portion 315 that protrudes inward is disposed on the inner surface of the recess 313.
- the protruding member 304 is formed by a single component.
- the upper part of the protrusion member 304 forms a disk having a diameter larger than the inner diameter of the rib part 315, and a protrusion having an abutting part 381 is arranged at the center of the upper surface in the drawing.
- An air passage 382 opens in the disk portion.
- the lower part of the protruding member 304 has a cylindrical shape having an outer diameter that can be inserted inside the rib portion 315.
- a tapered portion 383 whose outer diameter decreases as it goes upward in the figure is provided.
- the projecting member 304 is fixed to the main body 319 by inserting the O-ring into the tapered portion 383 after the lower end portion is inserted into the rib portion 315.
- the O-ring 390 is urged upward by the elasticity of the O-ring 390 so that the diameter of the taper portion 383 becomes narrow, and prevents the play between the protruding member 304 and the main body portion 319. Further, by inserting a spacer between the disk portion at the upper end of the protruding member 304 and the upper surface of the rib portion 315 of the main body portion 319, the protruding amount of the contact portion 381 can be adjusted.
- the protruding member 304 is an example of a forming portion that forms the protruding portion 215 in a partial region of the substrate 210.
- FIG. 42 is a partial schematic cross-sectional view of another substrate holder 501.
- FIG. The substrate holder 501 has a protruding member 405 having a structure different from that of the substrate holders 401 to 404 with respect to the main body 319 common to the other substrate holders 401 to 404 shown in FIGS. Formed in combination.
- the protruding member 405 of the substrate holder 501 includes a contact member 420, an intermediate member 430, and a screw member 440.
- the contact member 420 includes a contact portion 421 and a base portion 422.
- the base 422 has a flat disk shape.
- the contact portion 421 is formed so as to protrude from the center of the base portion 422.
- the base portion 422 has a larger area than the contact portion 421 and extends around the contact portion 421.
- the intermediate member 430 includes a depressed portion 431, a circumferential groove 432, a thread 433, and an upper flange portion 434.
- the depressed portion 431 is formed on the upper surface of the intermediate member 430 and has a size that can accommodate the base portion 422 of the contact member 420.
- the contact member 420 is accommodated in the depressed portion 431, the upper end of the contact portion 421 protrudes upward in the drawing from the upper surface of the intermediate member 430.
- the contact member 420 accommodated in the depressed portion 431 of the intermediate member 430 is fixed to the intermediate member 430 with an adhesive or the like.
- the intermediate member 430 has a circumferential groove 432 that goes around the side surface.
- An O-ring 490 is accommodated in the circumferential groove 432.
- the intermediate member 430 has a screw thread 433 on the inner surface of the screw hole that penetrates the center in the height direction.
- the screw thread 433 is screwed with a screw thread 443 of a screw member 440 described below.
- the intermediate member 430 forms an upper flange portion 434 having an outer diameter larger than the inner diameter of the rib portion 312 formed on the inner surface of the concave portion 313 of the main body portion 319 at the upper end side in the drawing.
- the lower end side of the intermediate member 430 in the drawing has an outer diameter smaller than the inner diameter of the rib portion 312. Therefore, when the intermediate member 430 is attached to the main body 319 from the holding surface 311 side, the lower end of the intermediate member 430 is inserted inside the rib portion 312 of the main body 319.
- the screw member 440 has a lower flange portion 442 and a screw thread 443.
- the screw thread 443 has a size and a shape to be screwed with the screw thread of the intermediate member 430.
- the lower flange portion 442 has an outer diameter larger than the inner diameter of the rib portion 312 in the main body portion 319. Therefore, when the screw member 440 is attached to the main body portion 319 from the side opposite to the holding surface 311 and the screw threads 433 and 443 of the intermediate member 430 and the screw member 440 are screwed together, the rib portion 312 of the main body portion 319 is It is sandwiched between the upper flange portion 434 of the intermediate member 430 and the lower flange portion 442 of the screw member 440. As a result, the protruding member 405 is not detached from the main body 319.
- the protruding member 405 is attached to the main body 319 so as to be vertically displaceable.
- a disc spring 450 is disposed between the upper flange portion 434 and the rib portion 312. The disc spring 450 biases the upper flange portion 434 in a direction away from the rib portion 312. As a result, the protruding member 405 maintains the protruding member 405 in a state in which the contact portion 421 protrudes the largest in the movable range.
- the protruding member 405 is an example of a forming portion that forms the protruding portion 215 in a partial region of the substrate 210.
- the movable stage 141 is further lifted in a state in which the protruding portion 215 of the substrate 210 is in contact with the substrate 230 to be bonded, so that the protruding member 405 resists the biasing force of the disc spring 450.
- the size of the contact area between the substrates 210 and 230 increases. Thereby, the size of the contact area between the substrates 210 and 230 can be adjusted when the starting point is formed.
- the contact shim 461 is exchanged by replacing the adjustment shim 461 sandwiched between the lower surface of the intermediate member 430 and the lower flange portion 442 of the screw member 440 with a different thickness.
- the amount of protrusion of 421 can be adjusted.
- the contact portion 421 presses the substrate 210 by exchanging an adjustment shim 462 sandwiched between the disc spring 450 and the rib portion 312 as shown in the figure.
- the pressure to be adjusted can be adjusted.
- the adjustment shim 462 for the disc spring 450 may be sandwiched between the upper flange portion 434 of the intermediate member 430 and the disc spring 450.
- the protruding amount of the protruding member when adjusting the protruding amount of the protruding member from the holding surface of the substrate holder, a plurality of protruding members having different contact heights are prepared, the size of the bonding starting point to be formed, and the bonding A protruding member may be selected and used according to the wave speed, the amount of positional deviation between the substrates generated during bonding, and the like.
- the holding surface 261 of the substrate holder 260 as shown in FIG. 17 depends on the protruding amount of the protruding member.
- the correction amount that is, the correction amount of the substrate held on the holding surface 261 may be adjusted.
- FIG. 43 is a schematic cross-sectional view of the substrate holder 502.
- the substrate holder 502 has the same structure as the substrate holder 501 except that the disc spring 450 and one adjustment shim 462 are omitted.
- the protruding member 405 is attached so as to be displaceable so that the protruding amount with respect to the main body 319 changes. Therefore, for example, as shown by the white arrow Z in the figure, the projection member 405 is urged from the lower side to the upper side by the pressurized fluid, so that it is the same as the substrate holder 501 provided with the disc spring 450. Functions can be realized. Furthermore, by adjusting the pressure of the pressurized fluid from the outside, the pressure by the contact portion 421 can be adjusted in the process of joining the substrates 210 and 230.
- FIG. 44 is a schematic cross-sectional view of another substrate holder 503.
- the substrate holder 503 has a structure in which the main body portion 319 itself is shaped and a contact portion 321 is provided on the holding surface 311.
- the joining start point when joining the substrates 210 and 230 can be controlled even when the substrate holder 503 having the contact portion is used without providing the main body portion 319 with the protruding member 405 as a separate member.
- the contact portion formed on the substrate holder 503 in this way is an example of a protrusion portion that forms the protrusion portion by contacting the partial area of the substrates 210 and 230 held on the holding surface.
- FIG. 45 is a schematic sectional view of another substrate holder 504.
- the substrate holder 504 has a structure in which the main body portion 319 itself is shaped and the holding surface 311 is provided with the contact portion 351 and the peripheral wall portion 353.
- a substrate holder 504 having the same function as the substrate holder 290 shown in FIG. 27 is provided by providing an air passage that opens between the contact portion 351 and the peripheral wall portion 353. It can be formed with a simple structure.
- the contact portion 351 constitutes a forming portion that forms the protruding portion 215 in a partial region of the substrate 210.
- the above-described various structures that form contact portions on the substrate holders 401, 402, 403, 501, 502, 503, and 504 are the stages that hold the substrate in the bonding apparatus that bonds the substrates without using the substrate holder. May be provided.
- the example in which the projection member for forming the protruding portion 215 is provided on the substrate holder or the stage is shown, but instead, the substrate holder or the stage is penetrated and the substrate holder or the stage is placed on the substrate holder or the stage.
- the amount of protrusion from the holding surface of the substrate holder or the stage may be controlled using an actuator that moves the protruding member.
- the projecting member and the actuator constitute a forming portion for forming the protruding portion 215 in a partial region of the substrate 210.
- the protruding portion 215 of the substrate 210 is deformed by extension or contraction as much as it protrudes from the original state before being held by the substrate holder. For this reason, the protruding portion 215 may be bonded to the central portion of the substrate 230 in a state where the protruding portion 215 is stretched or contracted.
- the substrate holder 240 is preliminarily deformed so that the surface of the central portion of the substrate 230 is deformed by the amount of protrusion of the protrusion member 250 from the holding surface 221 of the substrate holder 220 or the amount of deformation of the protrusion 215.
- the convex amount and shape of the holding surface 241 may be set.
- a deformation mechanism having an actuator that deforms the central portion of the substrate holder 240 is provided below the substrate holder 240, and the amount of protrusion of the protrusion member 250 from the holding surface 221 of the substrate holder 220 or the amount of deformation of the protrusion 215.
- the substrate 230 may be deformed in advance by deforming the substrate holder 240 by driving the actuator with a corresponding drive amount.
- the substrate 230 in a case where the substrate 210 is bonded to another substrate 230 held by another substrate holder by releasing the substrate 210 held by the substrate holder provided with the protruding member 250 from the substrate holder, the substrate 230 As shown in FIG. 20, the suction of the central portion of the substrate 230 is canceled or the suction force is weakened while the region other than the central portion is held by another substrate holder. Accordingly, when the protruding portion 215 of the substrate 210 comes into contact with the other substrate 230 when forming the starting point, the substrate 230 may be peeled off from the other substrate holder by the suction force between the substrates 210 and 230.
- the deformation similar to the deformation that occurs in the protruding portion 215 of the substrate 210 can be caused in the central portion of the substrate 230, so that the deformation amount of the protruding portion 215 of the substrate 210 and the deformation amount of the central portion of the substrate 230 Can be reduced, and displacement due to the difference in the deformation amount can be suppressed.
- the suction area of the other substrate holder may be divided into a plurality of areas, and the suction force may be individually controlled for each area.
- the suction method is a vacuum chuck
- the pressure acting on the substrate 230 is controlled for each region
- the suction method is an electrostatic chuck
- the voltage applied to each region is individually controlled.
- the substrate 210 is released from the substrate holder to form a bonding wave.
- the central portion of the substrate 230 is joined to the substrate 210 from the starting point, and is returned toward the other substrate holder by the weight of the substrate 210, so that the protruding portion 215 of the substrate 210 and the central portion of the substrate 230
- the generated deformation is returned to the state before the deformation at the same time. Thereby, it is possible to suppress the occurrence of a shift due to the difference in deformation amount between the substrates 210 and 230 during the progress of the bonding wave.
- the elongation deformation generated in the protruding portion 215 may be released and restored to the state before the protruding portion 215 is formed.
- the position in the planar direction of the surface of the substrate 210 in the protrusion 215 may deviate from the position when the position of the alignment mark 213 is detected.
- this deviation amount is measured or predicted in advance, and the surface of the central portion of the substrate 230 is deformed in advance with a deformation amount that can correct this deviation amount.
- the position measurement of the alignment mark 213 or the position control of the moving stage 141 may be performed in consideration of the restoration amount or deviation amount due to the release.
- the contact portions 251, 281, 321, 351, 381, 421 are formed in a columnar shape, but the contact is made so that the contacted substrate 210 is not damaged or damaged. It is preferable to chamfer the corner formed by the surface and the peripheral surface.
- a contact portion having a shape other than a column such as a hemispherical shape, a cone shape, and a truncated cone shape may be used.
- a contact portion having a contact surface curved with a curvature equal to the curvature required for the tip portion of the protruding portion 215 of the substrate 210 may be used.
- the required curvature is the contact area when the protrusion 215 and the substrate 230 can come into contact with each other in a state where no bubbles are generated or sandwiched between the tip of the protrusion 215 and the other substrate 230.
- the curvature corresponds to the area, shape, and the like.
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Abstract
Description
特許文献1 特開2012-186243号公報
Claims (20)
- 第1の基板と第2の基板とを接合する方法であって、
前記第1の基板の一部の領域に突出部を形成する形成段階と、
前記第1の基板に前記突出部が形成された状態で、前記第1の基板の位置を計測する計測段階と、
前記第1の基板の前記突出部を前記第2の基板の表面に接触させて接触領域を形成し、前記接触領域を拡大させることにより前記第1の基板および前記第2の基板を接合する接合段階と、
を含む接合方法。 - 前記形成段階は、前記第1の基板を保持する保持部の保持面に予め設けられた突起部に前記第1の基板の前記一部の領域を当接させ、前記第1の基板の他の部分を前記保持面に保持することにより、前記第1の基板に前記突出部を形成する請求項1に記載の接合方法。
- 前記第1の基板に前記突出部が形成された状態で、前記第1の基板および前記第2の基板の位置合わせを行う位置合わせ段階を含む請求項1または2に記載の接合方法。
- 前記形成段階は、前記突出部の曲率が前記一部の領域以外の領域の曲率よりも大きくなるように、前記一部の領域を湾曲させる請求項1から3のいずれか一項に記載の接合方法。
- 前記接合段階は、前記第2の基板の一方を保持しつつ、前記第1の基板の保持を解放して、前記接触領域を拡大させる段階を更に有する請求項1から4のいずれか一項に記載の接合方法。
- 前記第2の基板を湾曲させる段階を有し、
前記接合段階では、前記第1の基板の前記突出部と、湾曲した前記第2の基板の表面とを接触させる請求項1から5のいずれか一項に記載の接合方法。 - 前記接合段階は、前記第1の基板の前記突出部を前記第2の基板に接触させた後、前記突出部および前記第2の基板の間に所定の接合強度が形成された後に、前記接触領域の拡大を開始する請求項1から6のいずれか一項に記載の接合方法。
- 前記接合段階は、前記第1の基板の前記突出部を前記第2の基板に接触させた後、前記第1の基板および前記第2の基板の少なくとも一方の振動が収束した後に、前記接触領域の拡大を開始する請求項1から7のいずれか一項に記載の接合方法。
- 前記接合段階は、前記第1の基板の前記突出部を前記第2の基板に接触させた後に前記第1の基板の保持を解放したとき、解放された前記第1の基板の振動が収束するまで、前記第1の基板の一部を保持し続けることにより、前記接触領域の拡大を抑制する段階を更に有する請求項1から8のいずれか一項に記載の接合方法。
- 前記第1の基板の前記突出部を前記第2の基板の表面に接触させる前に、少なくとも前記突出部に隣接する領域において前記第1の基板の保持を解除する段階を含む請求項1から9のいずれか一項に記載の接合方法。
- 第1の基板と第2の基板とを接合する接合装置であって、
前記第1の基板の一部の領域に突出部を形成する形成部と、
前記第1の基板に前記突出部が形成された状態で、前記第1の基板の位置を計測する計測部と、
前記第1の基板の前記突出部を前記第2の基板の表面の一部に接触させて接触領域を形成し、前記接触領域を拡大させることにより前記第1の基板および前記第2の基板を接合する接合部と、
を備える接合装置。 - 前記第1の基板に前記突出部が形成された状態で、前記第1の基板および前記第2の基板の位置合わせを行う位置合わせ部を備える請求項11に記載の接合装置。
- 前記第1の基板を保持する保持部を備え、
前記保持部は、前記第1の基板を保持する保持面を有する本体部を有し、
前記形成部は、前記本体部に設けられ、少なくとも一部が前記保持面から突出した突起部材を有し、
前記保持面に保持された前記第1の基板の一部の領域に前記突起部材が当接することにより、前記第1の基板の前記一部に前記突出部を形成する請求項11または12に記載の接合装置。 - 前記保持面には凹部が形成されており、
前記突起部材は、前記凹部内に配されており、前記凹部の深さよりも大きな高さを有する当接部を有する請求項13に記載の接合装置。 - 前記突起部材は、前記本体部に対して着脱可能に固定される請求項13または14に記載の接合装置。
- 前記突起部材は、当接した前記第1の基板の一部を吸着する吸着部を有する請求項13から15のいずれか一項に記載の接合装置。
- 基板を保持する保持面を有する本体部と、
前記本体部に設けられ、少なくとも一部が前記保持面から突出した突起部材と、
を備え、
前記保持面に保持された前記基板の一部の領域に前記突起部材が当接することにより、前記基板の他の領域の曲率よりも大きい曲率で湾曲する突出部を、前記一部の領域に形成する保持部材。 - 前記保持面には凹部が形成されており、
前記突起部材は、前記凹部に配されており、前記凹部の深さよりも大きな高さを有する当接部を有する請求項17に記載の保持部材。 - 前記突起部材は、前記本体部に対して着脱可能に固定される請求項18に記載の保持部材。
- 前記突起部材は、
前記当接部に当接した前記基板の一部を吸着する吸着部を有する請求項18または19に記載の保持部材。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
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KR1020197013867A KR20190062573A (ko) | 2016-11-16 | 2017-11-16 | 접합 방법, 접합 장치, 및 유지 부재 |
KR1020247004976A KR20240024360A (ko) | 2016-11-16 | 2017-11-16 | 접합 방법, 접합 장치, 및 유지 부재 |
KR1020227021689A KR102637642B1 (ko) | 2016-11-16 | 2017-11-16 | 접합 방법, 접합 장치, 및 유지 부재 |
JP2018551689A JPWO2018092861A1 (ja) | 2016-11-16 | 2017-11-16 | 接合方法、接合装置、および保持部材 |
KR1020217020528A KR102414568B1 (ko) | 2016-11-16 | 2017-11-16 | 접합 방법, 접합 장치, 및 유지 부재 |
US16/413,127 US11004686B2 (en) | 2016-11-16 | 2019-05-15 | Bonding method, bonding device, and holding member |
US17/225,727 US20210225651A1 (en) | 2016-11-16 | 2021-04-08 | Bonding method, bonding device, and holding member |
Applications Claiming Priority (2)
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US16/413,127 Continuation US11004686B2 (en) | 2016-11-16 | 2019-05-15 | Bonding method, bonding device, and holding member |
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WO2018092861A1 true WO2018092861A1 (ja) | 2018-05-24 |
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PCT/JP2017/041366 WO2018092861A1 (ja) | 2016-11-16 | 2017-11-16 | 接合方法、接合装置、および保持部材 |
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Country | Link |
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US (2) | US11004686B2 (ja) |
JP (4) | JPWO2018092861A1 (ja) |
KR (4) | KR102637642B1 (ja) |
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JP6736799B1 (ja) * | 2018-08-29 | 2020-08-05 | 東京エレクトロン株式会社 | 接合装置のパラメータ調整方法および接合システム |
JP2020043263A (ja) * | 2018-09-12 | 2020-03-19 | キオクシア株式会社 | 半導体装置およびその製造方法 |
FR3094563A1 (fr) * | 2019-03-29 | 2020-10-02 | Soitec | Procede de fabrication d’un substrat de type semi-conducteur sur isolant |
TWI769957B (zh) * | 2021-11-25 | 2022-07-01 | 天虹科技股份有限公司 | 基板鍵合機台 |
WO2024002494A1 (de) * | 2022-07-01 | 2024-01-04 | Ev Group E. Thallner Gmbh | Verfahren zum bonden eines ersten substrats mit einem zweiten substrat, vorrichtung zum bonden und anordnung aus erstem und zweitem substrat |
US20240213210A1 (en) * | 2022-12-23 | 2024-06-27 | Adeia Semiconductor Bonding Technologies Inc. | System and method for using acoustic waves to counteract deformations during bonding |
TWI831557B (zh) * | 2023-01-04 | 2024-02-01 | 日商荏原製作所股份有限公司 | 基板固持器及基板處理裝置 |
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- 2017-11-16 KR KR1020217020528A patent/KR102414568B1/ko active IP Right Grant
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2019
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2020
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-
2021
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Also Published As
Publication number | Publication date |
---|---|
JP2024054224A (ja) | 2024-04-16 |
KR20210084694A (ko) | 2021-07-07 |
KR102637642B1 (ko) | 2024-02-19 |
JP2022172214A (ja) | 2022-11-15 |
JP7435670B2 (ja) | 2024-02-21 |
TW202305871A (zh) | 2023-02-01 |
KR20240024360A (ko) | 2024-02-23 |
US20210225651A1 (en) | 2021-07-22 |
KR102414568B1 (ko) | 2022-06-30 |
KR20190062573A (ko) | 2019-06-05 |
US20190267238A1 (en) | 2019-08-29 |
US11004686B2 (en) | 2021-05-11 |
JPWO2018092861A1 (ja) | 2019-07-25 |
TW201826333A (zh) | 2018-07-16 |
JP7131583B2 (ja) | 2022-09-06 |
KR20220098256A (ko) | 2022-07-11 |
JP2020191457A (ja) | 2020-11-26 |
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