WO2018072283A1 - Oled显示器及其制作方法 - Google Patents
Oled显示器及其制作方法 Download PDFInfo
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- WO2018072283A1 WO2018072283A1 PCT/CN2016/109572 CN2016109572W WO2018072283A1 WO 2018072283 A1 WO2018072283 A1 WO 2018072283A1 CN 2016109572 W CN2016109572 W CN 2016109572W WO 2018072283 A1 WO2018072283 A1 WO 2018072283A1
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- inorganic passivation
- oled
- organic buffer
- conductive layer
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
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- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 claims description 8
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
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- H10K50/84—Passivation; Containers; Encapsulations
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- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
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- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
Definitions
- the present invention relates to the field of flat panel display technologies, and in particular, to an OLED display and a method of fabricating the same.
- OLED Organic Light-Emitting Diode
- OLED display technology is different from traditional liquid crystal display technology. It does not require a backlight. It uses a very thin coating of organic materials and a glass substrate. When there is current, these organic materials will emit light. However, since organic materials are easily reacted with water vapor or oxygen, as an organic material-based display device, the OLED display has a very high requirement for packaging, and therefore, the sealing of the inside of the device is improved by the packaging of the OLED device, and the external environment is isolated as much as possible. It is essential for stable illumination of OLED devices.
- the most common method for packaging OLED devices is to cover the package with a UV-curable adhesive and a hard-package substrate (such as glass or metal), but the method is not suitable for flexible devices. Therefore, there are also technical solutions for laminating.
- the film package (TFE) for packaging OLED devices due to the flexible display as the mainstream technology in the future, the corresponding film packaging process is crucial.
- a large number of research results show that the attenuation of the efficiency of OLED devices is inseparable from the degradation of materials caused by self-heating. Therefore, how to effectively block the external water oxygen and reduce the thermal decomposition caused by the heat of the device is very important to improve the life of the device.
- the most extensive thin film encapsulation process generally adopts an inorganic/organic/inorganic alternating structure, such as the thin film encapsulation structure disclosed in the patent document US8569951, which adopts an inorganic organic circulation alternate manner, and an inorganic layer is used to block external water. Oxygen, the organic layer is used to relieve stress and flattening coverage of the particles.
- we know that the thermal conductivity of inorganic metal oxides and organic materials used in this packaging process is often very low. It is difficult to transfer the heat generated by the component.
- the Korea Institute of Industrial Technology reported an OLED element structure in the journal Organic Electronics. Its TFE structure uses a multilayer polymer layer and an alternating structure of aluminum oxide (Al 2 O 3 ) layers. Finally, The uppermost layer of the TFE structure is provided with a copper (Cu) heat sink; the OLED element with copper heat sink has a significantly lower operating temperature than the component without the copper heat sink, and, with the passage of working time, the component with the copper heat sink The upward trend in temperature is significantly suppressed. This process provides a better guiding scheme for heat transfer of OLED components. However, the transmittance of Cu is not high enough, especially for top emitting devices used in the display field, which is greatly limited.
- An object of the present invention is to provide an OLED display capable of effectively transferring heat generated during operation of an OLED device, reducing thermal decomposition of an OLED device material, and improving device lifetime while ensuring sufficient resistance to external water oxygen.
- Another object of the present invention is to provide a method for fabricating an OLED display, which introduces a patterned high thermal conductive layer into a thin film encapsulation structure, can effectively transfer heat generated during operation of the OLED device, and reduce thermal decomposition of the OLED device material. Ensure that the device has sufficient resistance to external water oxygen while increasing device lifetime.
- the present invention provides an OLED display, comprising an OLED substrate, and a thin film encapsulation layer disposed on the OLED substrate;
- the thin film encapsulation layer includes a first inorganic passivation layer disposed on the OLED substrate, a high thermal conductive layer disposed on the first inorganic passivation layer, a first inorganic passivation layer, and a high a first organic buffer layer on the heat conductive layer, and a second inorganic passivation layer disposed on the first organic buffer layer;
- the OLED substrate includes a plurality of pixel units arranged in an array, each pixel unit having a plurality of sub-pixel regions arranged in an array;
- the high thermal conductive layer is provided with a plurality of openings corresponding to the plurality of sub-pixel regions of the plurality of pixel units, and the first organic buffer layer completely fills the plurality of openings on the high thermal conductive layer.
- the material of the high thermal conductivity layer is diamond-like, silver, aluminum, aluminum nitride, graphene, or copper.
- the highly thermally conductive layer has a thickness of from 1 to 1000 nm.
- the thin film encapsulation layer further includes a second organic buffer layer disposed on the second inorganic passivation layer and a third inorganic passivation layer disposed on the second organic buffer layer.
- the materials of the first, second, and third inorganic passivation layers are all Al 2 O 3 , TiO 2 , SiNx, SiCNx, or SiOx, and the thicknesses of the first, second, and third inorganic passivation layers are both 0.5-1 ⁇ m;
- the materials of the first and second organic buffer layers are all hexamethyldisiloxane, a polyacrylate polymer, a polycarbonate polymer, or polystyrene, and the first and second organic buffers
- the thickness of the layers is 4-8 ⁇ m.
- Each pixel unit has four sub-pixel regions arranged in a 2 ⁇ 2 matrix, and the four sub-pixel regions are respectively white, red, blue, and green sub-pixel regions.
- the invention also provides a method for manufacturing an OLED display, comprising the following steps:
- Step 1 providing an OLED substrate, the OLED substrate includes a plurality of pixel units arranged in an array, each pixel unit having a plurality of sub-pixel regions arranged in an array;
- Step 2 forming a thin film encapsulation layer on the OLED substrate to obtain an OLED display
- the forming process of the thin film encapsulation layer comprises the following steps:
- Step 21 depositing a first inorganic passivation layer on the OLED substrate
- Step 22 forming a high thermal conductive layer on the first inorganic passivation layer, wherein the high thermal conductive layer is provided with a plurality of openings corresponding to a plurality of sub-pixel regions of the plurality of pixel units;
- Step 23 forming a first organic buffer layer on the first inorganic passivation layer and the high thermal conductive layer, the first organic buffer layer completely filling a plurality of openings on the high thermal conductive layer;
- Step 24 depositing a second inorganic passivation layer on the first organic buffer layer.
- the step 22 is specifically to directly form a high thermal conductive layer having the plurality of openings by vacuum evaporation using a mask, or specifically,
- thermal conductive film First depositing a thermal conductive film by plasma enhanced chemical vapor deposition, atomic layer deposition, pulsed laser deposition, or sputtering deposition, and then performing photolithography on the thermally conductive film to form a number on the thermally conductive film Openings to obtain a highly thermally conductive layer;
- the material of the high heat conductive layer is diamond-like, silver, aluminum, aluminum nitride, graphene, or copper, and the high heat conductive layer has a thickness of 1 to 1000 nm.
- the forming process of the thin film encapsulation layer further includes:
- Step 25 forming a second organic buffer layer on the second inorganic passivation layer
- Step 26 depositing a third inorganic passivation layer on the second organic buffer layer.
- the first, second, and third inorganic passivation layers are each formed by a plasma enhanced chemical vapor deposition method, an atomic layer deposition method, a pulsed laser deposition method, or a sputtering deposition method, the first, second, and
- the material of the three inorganic passivation layers is Al 2 O 3 , TiO 2 , SiNx, SiCNx, or SiOx, and the thickness of each of the first, second, and third inorganic passivation layers is 0.5-1 ⁇ m;
- the first and second organic buffer layers are all formed by inkjet printing, plasma enhanced chemical vapor deposition, screen printing, or slit coating, and the materials of the first and second organic buffer layers are all six.
- the methyl dimethicone, the polyacrylate polymer, the polycarbonate polymer, or the polystyrene, the first and second organic buffer layers each have a thickness of 4 to 8 ⁇ m.
- each pixel unit has four sub-pixel regions arranged in a 2 ⁇ 2 matrix, and the four sub-pixel regions are respectively white, red, blue, and green sub-pixel regions.
- the present invention also provides an OLED display, comprising an OLED substrate, and a thin film encapsulation layer disposed on the OLED substrate;
- the thin film encapsulation layer includes a first inorganic passivation layer disposed on the OLED substrate, a high thermal conductive layer disposed on the first inorganic passivation layer, a first inorganic passivation layer, and a high a first organic buffer layer on the heat conductive layer, and a second inorganic passivation layer disposed on the first organic buffer layer;
- the OLED substrate includes a plurality of pixel units arranged in an array, each pixel unit having a plurality of sub-pixel regions arranged in an array;
- the high thermal conductive layer is provided with a plurality of openings corresponding to the plurality of sub-pixel regions of the plurality of pixel units, and the first organic buffer layer completely fills the plurality of openings on the high thermal conductive layer;
- the material of the high thermal conductivity layer is diamond-like, silver, aluminum, aluminum nitride, graphene, or copper, and the high thermal conductive layer has a thickness of 1-1000 nm;
- Each of the pixel units has four sub-pixel regions arranged in a 2 ⁇ 2 matrix, and the four sub-pixel regions are respectively white, red, blue, and green sub-pixel regions.
- the OLED display of the present invention includes an OLED substrate and a thin film encapsulation layer disposed on the OLED substrate; wherein the thin film encapsulation layer comprises a patterned high thermal conductivity layer, and the high thermal conductivity layer is provided There are several openings corresponding to the plurality of sub-pixel regions on the OLED substrate, which not only avoids the absorption of light by the high thermal conductive layer, but also avoids the limitation that the top emitting device can only use materials having high transmittance, thereby While reducing the light-emitting efficiency of the device, the heat generated by the OLED device during operation can be effectively transferred, the thermal decomposition of the OLED device material can be reduced, and the device can have sufficient ability to block external water oxygen and improve device life; the OLED display of the present invention The method of manufacturing the OLED device by using a thin film encapsulation method, and introducing a patterned high thermal conductive layer into the thin film encapsulation structure, wherein the high thermal conductive layer is provided with a plurality of sub-
- Opening not only avoids the absorption of light by the high thermal conductivity layer, but also avoids the high transmittance of the top emitting device. Material limits, so that the same time without lowering the optical efficiency of the device can effectively transfer heat generated by the OLED device in operation, an OLED device to reduce thermally decomposable material, and to ensure the device has sufficient The ability to block external water oxygen and improve device life.
- FIG. 1 is a schematic structural view of a first embodiment of an OLED display of the present invention
- FIG. 2 is a schematic structural view of a second embodiment of an OLED display of the present invention.
- FIG. 3 is a schematic flow chart of a method for fabricating an OLED display of the present invention.
- step 21 of a method of fabricating an OLED display of the present invention is a schematic diagram of step 21 of a method of fabricating an OLED display of the present invention.
- step 22 of a method of fabricating an OLED display of the present invention is a schematic diagram of step 22 of a method of fabricating an OLED display of the present invention.
- FIG. 6 is a schematic diagram of step 23 of a method of fabricating an OLED display of the present invention.
- step 25 of a second embodiment of a method of fabricating an OLED display of the present invention is a schematic diagram of step 25 of a second embodiment of a method of fabricating an OLED display of the present invention.
- the OLED display includes an OLED substrate 101 and a thin film encapsulation layer disposed on the OLED substrate 101.
- the thin film encapsulation layer includes a first inorganic passivation layer 201 disposed on the OLED substrate 101, a high thermal conductive layer 301 disposed on the first inorganic passivation layer 201, and the first inorganic passivation layer. a layer 201, a first organic buffer layer 401 on the high thermal conductivity layer 301, and a second inorganic passivation layer 202 disposed on the first organic buffer layer 401;
- the OLED substrate 101 includes a plurality of pixel units arranged in an array, each pixel unit having a plurality of sub-pixel regions arranged in an array;
- the high thermal conductive layer 301 is provided with a plurality of openings 3011 corresponding to the plurality of sub-pixel regions of the plurality of pixel units, and the first organic buffer layer 401 completely fills the plurality of openings on the high thermal conductive layer 301. 3011.
- the plurality of openings 3011 of the high heat conductive layer 301 and the plurality of images The arrangement of the plurality of sub-pixel regions of the prime unit is consistent, and the size of each opening 3011 is consistent with the size of the corresponding sub-pixel region, thereby avoiding the absorption of light emitted by the high thermal conductive layer 301 to the corresponding sub-pixel region, and avoiding
- the top-emitting device can only use the material with high transmittance, can effectively transfer the heat generated by the OLED device during operation, reduce the thermal decomposition of the OLED device material, and ensure that the device has sufficient capacity without reducing the light-emitting efficiency of the device. The ability to block external water oxygen and improve device life.
- each pixel unit has four sub-pixel regions arranged in a 2 ⁇ 2 matrix, and the four sub-pixel regions are respectively white, red, blue, and green sub-pixel regions, each of which is
- the size of the opening 3011 corresponding to the white sub-pixel region is the same as the size of the white sub-pixel region.
- the size of the opening 3011 corresponding to the red, blue, and green sub-pixel regions respectively is different from the red, blue, and green sub-pixel regions.
- the dimensions are the same.
- the material of the high thermal conductive layer 301 is a metal or non-metal high thermal conductivity material such as diamond-like carbon (DLC), silver, aluminum (Al), aluminum nitride (AlN), graphene, copper or the like.
- DLC diamond-like carbon
- Al aluminum
- AlN aluminum nitride
- graphene copper or the like.
- the high heat conductive layer 301 has a thickness of 1 to 1000 nm.
- the materials of the first and second inorganic passivation layers 201 and 202 are both Al 2 O 3 , titanium oxide (TiO 2 ), silicon nitride (SiNx), silicon carbonitride (SiCNx), and silicon oxide. (SiOx) or the like for blocking external water oxygen.
- the first and second inorganic passivation layers 201 and 202 have a thickness of 0.5-1 ⁇ m.
- the material of the first organic buffer layer 401 is hexamethyldisiloxane (HMDSO), a polyacrylate polymer (for example, Acrylic), a polycarbonate polymer, or A material such as polystyrene used to relieve stress and cover particulate matter.
- HMDSO hexamethyldisiloxane
- a polyacrylate polymer for example, Acrylic
- a polycarbonate polymer for example, polycarbonate polymer
- a material such as polystyrene used to relieve stress and cover particulate matter is hexamethyldisiloxane (HMDSO), a polyacrylate polymer (for example, Acrylic), a polycarbonate polymer, or A material such as polystyrene used to relieve stress and cover particulate matter.
- the first organic buffer layer 401 has a thickness of 4-8 ⁇ m.
- the thin film encapsulation layer further includes a second inorganic passivation layer 202.
- the second organic buffer layer 402 and the third inorganic passivation layer 203 disposed on the second organic buffer layer 402.
- the material of the second organic buffer layer 402 and the first organic buffer layer 401 is hexamethyldisiloxane, a polyacrylate polymer, a polycarbonate polymer, or polystyrene.
- the thickness of the second organic buffer layer 402 and the first organic buffer layer 401 is 4-8 ⁇ m.
- the material of the third inorganic passivation layer 203 and the first and second inorganic passivation layers 201, 202 are both Al 2 O 3 , TiO 2 , SiNx, SiCNx, or SiOx, and the third inorganic passivation layer 203
- the thicknesses of the first and second inorganic passivation layers 201 and 202 are both 0.5-1 ⁇ m. Others are the same as the first embodiment described above, and are not described herein again.
- the present invention further provides a method for fabricating an OLED display. Specifically, the first embodiment includes the following steps:
- Step 1 An OLED substrate 101 is provided.
- the OLED substrate 101 includes a plurality of pixel units arranged in an array, and each pixel unit has a plurality of sub-pixel regions arranged in an array.
- Step 2 forming a thin film encapsulation layer on the OLED substrate 101 to obtain an OLED display;
- the forming process of the thin film encapsulation layer comprises the following steps:
- Step 21 as shown in FIG. 4, on the OLED substrate by plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), pulsed laser deposition (PLD), or sputter deposition (Sputter)
- PECVD plasma enhanced chemical vapor deposition
- ALD atomic layer deposition
- PLD pulsed laser deposition
- Sputter sputter deposition
- the material of the first inorganic passivation layer 201 is a material for blocking external water oxygen such as Al 2 O 3 , TiO 2 , SiNx, SiCNx, SiOx or the like.
- the first inorganic passivation layer 201 has a thickness of 0.5-1 ⁇ m.
- Step 22 as shown in FIG. 5, a high thermal conductive layer 301 is formed on the first inorganic passivation layer 201, and the high thermal conductive layer 301 is provided with a plurality of sub-pixel regions corresponding to the plurality of pixel units. Corresponding opening 3011.
- the step 22 specifically forms a high thermal conductive layer 301 having the plurality of openings 3011 by vacuum evaporation using a mask; or specifically,
- a thermal conductive film is deposited by a plurality of metal or non-metal deposition processes such as plasma enhanced chemical vapor deposition, atomic layer deposition, pulsed laser deposition, and sputtering deposition, and then the photoconductive process is performed on the thermally conductive film.
- a plurality of openings 3011 are formed on the thermally conductive film to obtain a highly thermally conductive layer 301.
- the plurality of openings 3011 of the high thermal conductive layer 301 are aligned with the plurality of sub-pixel regions of the plurality of pixel units, and the size of each opening 3011 and the size of the corresponding sub-pixel region Consistently, the absorption of light emitted by the high-heat-conducting layer 301 to the sub-pixel region is avoided, and the top emission device can be prevented from using only the material having high transmittance, and can be effectively transferred without lowering the light-emitting efficiency of the device.
- the heat generated by the OLED device during operation reduces the thermal decomposition of the OLED device material and ensures that the device has sufficient resistance to external water oxygen and improves device lifetime.
- each pixel unit has four sub-pixel regions arranged in a 2 ⁇ 2 matrix, and the four sub-pixel regions are respectively white, red, blue, and green sub-pixel regions, each of which is
- the size of the opening 3011 corresponding to the white sub-pixel region is the same as the size of the white sub-pixel region.
- the size of the opening 3011 corresponding to the red, blue, and green sub-pixel regions respectively is different from the red, blue, and green sub-pixel regions.
- the dimensions are the same.
- the material of the high thermal conductive layer 301 is a metal or non-metal high thermal conductivity material such as diamond-like, silver, aluminum, aluminum nitride, graphene, copper or the like.
- the high heat conductive layer 301 has a thickness of 1 to 1000 nm.
- Step 23 as shown in FIG. 6, in the first inorganic passivation by inkjet printing (IJP), plasma enhanced chemical vapor deposition, screen printing, or slot coating
- a first organic buffer layer 401 is formed on the layer 201 and the high heat conductive layer 301, and the first organic buffer layer 401 completely fills the plurality of openings 3011 on the high heat conductive layer 301.
- the material of the first organic buffer layer 401 is hexamethyldisiloxane, a polyacrylate polymer (for example, acrylic), a polycarbonate polymer, or polystyrene. Relieves stress and materials that cover particulate matter.
- the first organic buffer layer 401 has a thickness of 4-8 ⁇ m.
- Step 24 depositing a second inorganic passivation layer 202 on the first organic buffer layer 401 by plasma enhanced chemical vapor deposition, atomic layer deposition, pulsed laser deposition, or sputtering deposition, thereby obtaining The OLED display shown in Figure 1.
- the material of the second inorganic passivation layer 202 is Al 2 O 3 , TiO 2 , SiNx, SiCNx, SiOx or the like for blocking external water oxygen, and the thickness of the second inorganic passivation layer 202 is 0.5-1 ⁇ m.
- the forming process of the thin film encapsulation layer further includes:
- Step 25 as shown in FIG. 7, coating a second organic buffer layer 402 on the second inorganic passivation layer 202.
- the second organic buffer layer 402 and the first organic buffer layer 401 are each formed by inkjet printing, plasma enhanced chemical vapor deposition, screen printing, or slit coating, the second organic
- the material of the buffer layer 402 and the first organic buffer layer 401 is hexamethyldisiloxane, a polyacrylate polymer, a polycarbonate polymer, or polystyrene, and the second organic buffer layer 402 and the first organic buffer layer 401 have a thickness of 4-8 ⁇ m.
- Step 26 forming a third inorganic passivation layer 203 on the second organic buffer layer 402, thereby obtaining an OLED display as shown in FIG. 2.
- the third inorganic passivation layer 203 and the first and second inorganic passivation layers 201 and 202 are both subjected to plasma enhanced chemical vapor deposition, atomic layer deposition, pulsed laser deposition, or sputtering.
- the material of the third inorganic passivation layer 203 and the first and second inorganic passivation layers 201, 202 are both Al 2 O 3 , TiO 2 , SiNx, SiCNx, or SiOx,
- the thickness of the three inorganic passivation layers 203 and the first and second inorganic passivation layers 201 and 202 is 0.5-1 ⁇ m.
- the OLED display of the present invention includes an OLED substrate and a thin film encapsulation layer disposed on the OLED substrate; wherein the thin film encapsulation layer comprises a patterned high thermal conductivity layer, and
- the high thermal conductive layer is provided with a plurality of openings corresponding to the plurality of sub-pixel regions on the OLED substrate, which not only avoids the absorption of light by the high thermal conductive layer, but also avoids the high transmittance of the top emitting device.
- the limitation of the material can effectively transfer the heat generated by the OLED device during operation without reducing the light-emitting efficiency of the device, reduce the thermal decomposition of the OLED device material, and ensure that the device has sufficient ability to block external water oxygen and improve device life.
- the OLED device is packaged by a thin film encapsulation method, and the patterned high thermal conductive layer is introduced into the thin film encapsulation structure, and the high thermal conductive layer is provided with a plurality of numbers on the OLED substrate.
- the one-to-one corresponding opening of the sub-pixel region not only avoids the absorption of light by the high thermal conductive layer, but also avoids the limitation that the top-emitting device can only use the material having high transmittance, thereby being effective without reducing the light-emitting efficiency of the device.
- Transfer the heat generated by the OLED device during operation reduce the thermal decomposition of the OLED device material, and ensure that the device has sufficient The ability to block external oxygen in water, to improve device lifetime.
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Abstract
Description
Claims (13)
- 一种OLED显示器,包括OLED基板、及设于所述OLED基板上的薄膜封装层;所述薄膜封装层包括设于所述OLED基板上的第一无机钝化层、设于所述第一无机钝化层上的高导热层、设于所述第一无机钝化层、及高导热层上的第一有机缓冲层、及设于第一有机缓冲层上的第二无机钝化层;所述OLED基板包括数个阵列排布的像素单元,每一像素单元具有数个阵列排布的子像素区域;所述高导热层上设有数个与所述数个像素单元的数个子像素区域一一对应的开口,所述第一有机缓冲层完全填充所述高导热层上的数个开口。
- 如权利要求1所述的OLED显示器,其中,所述高导热层的材料为类金刚石、银、铝、氮化铝、石墨烯、或铜,所述高导热层的厚度为1-1000nm。
- 如权利要求1所述的OLED显示器,其中,所述薄膜封装层还包括设于所述第二无机钝化层上的第二有机缓冲层、及设于第二有机缓冲层上的第三无机钝化层。
- 如权利要求3所述的OLED显示器,其中,所述第一、第二、第三无机钝化层的材料均为Al2O3、TiO2、SiNx、SiCNx、或SiOx,所述第一、第二、第三无机钝化层的厚度均为0.5-1μm;所述第一、第二有机缓冲层的材料均为六甲基二甲硅醚、聚丙烯酸酯类聚合物、聚碳酸酯类聚合物、或聚苯乙烯,所述第一、第二有机缓冲层的厚度均为4-8μm。
- 如权利要求1所述的OLED显示器,其中,每一像素单元具有四个呈2×2矩阵排布的子像素区域,该四个子像素区域分别为白色、红色、蓝色、绿色子像素区域。
- 一种OLED显示器的制作方法,包括如下步骤:步骤1、提供OLED基板,所述OLED基板包括数个阵列排布的像素单元,每一像素单元具有数个阵列排布的子像素区域;步骤2、在所述OLED基板上形成薄膜封装层,得到OLED显示器;其中,所述薄膜封装层的形成过程包括如下步骤:步骤21、在所述OLED基板上沉积形成第一无机钝化层;步骤22、在所述第一无机钝化层上形成高导热层,所述高导热层上设 有数个与所述数个像素单元的数个子像素区域一一对应的开口;步骤23、在所述第一无机钝化层、及高导热层上形成第一有机缓冲层,所述第一有机缓冲层完全填充所述高导热层上的数个开口;步骤24、在所述第一有机缓冲层上沉积形成第二无机钝化层。
- 如权利要求6所述的OLED显示器的制作方法,其中,所述步骤22具体为利用掩模板通过真空蒸镀法直接形成具有所述数个开口的高导热层,或者具体为,先通过等离子体增强化学气相沉积法、原子层沉积法、脉冲激光沉积法、或溅镀沉积法沉积一层导热膜,然后对所述导热膜进行光刻工艺处理,在该导热膜上形成数个开口,得到高导热层;所述高导热层的材料为类金刚石、银、铝、氮化铝、石墨烯、或铜,所述高导热层的厚度为1-1000nm。
- 如权利要求6所述的OLED显示器的制作方法,其中,所述薄膜封装层的形成过程还包括:步骤25、在所述第二无机钝化层上形成第二有机缓冲层;步骤26、在所述第二有机缓冲层上沉积形成第三无机钝化层。
- 如权利要求8所述的OLED显示器的制作方法,其中,所述第一、第二、第三无机钝化层均通过等离子体增强化学气相沉积法、原子层沉积法、脉冲激光沉积法、或溅镀沉积法形成,所述第一、第二、第三无机钝化层的材料均为Al2O3、TiO2、SiNx、SiCNx、或SiOx,所述第一、第二、第三无机钝化层的厚度均为0.5-1μm;所述第一、第二有机缓冲层均通过喷墨印刷、等离子体增强化学气相沉积法、丝网印刷、或狭缝涂布形成,所述第一、第二有机缓冲层的材料均为六甲基二甲硅醚、聚丙烯酸酯类聚合物、聚碳酸酯类聚合物、或聚苯乙烯,所述第一、第二有机缓冲层的厚度均为4-8μm。
- 如权利要求6所述的OLED显示器的制作方法,其中,所述步骤1提供的OLED基板,每一像素单元具有四个呈2×2矩阵排布的子像素区域,该四个子像素区域分别为白色、红色、蓝色、绿色子像素区域。
- 一种OLED显示器,包括OLED基板、及设于所述OLED基板上的薄膜封装层;所述薄膜封装层包括设于所述OLED基板上的第一无机钝化层、设于所述第一无机钝化层上的高导热层、设于所述第一无机钝化层、及高导热层上的第一有机缓冲层、及设于第一有机缓冲层上的第二无机钝化层;所述OLED基板包括数个阵列排布的像素单元,每一像素单元具有数 个阵列排布的子像素区域;所述高导热层上设有数个与所述数个像素单元的数个子像素区域一一对应的开口,所述第一有机缓冲层完全填充所述高导热层上的数个开口;其中,所述高导热层的材料为类金刚石、银、铝、氮化铝、石墨烯、或铜,所述高导热层的厚度为1-1000nm;其中,每一像素单元具有四个呈2×2矩阵排布的子像素区域,该四个子像素区域分别为白色、红色、蓝色、绿色子像素区域。
- 如权利要求11所述的OLED显示器,其中,所述薄膜封装层还包括设于所述第二无机钝化层上的第二有机缓冲层、及设于第二有机缓冲层上的第三无机钝化层。
- 如权利要求12所述的OLED显示器,其中,所述第一、第二、第三无机钝化层的材料均为Al2O3、TiO2、SiNx、SiCNx、或SiOx,所述第一、第二、第三无机钝化层的厚度均为0.5-1μm;所述第一、第二有机缓冲层的材料均为六甲基二甲硅醚、聚丙烯酸酯类聚合物、聚碳酸酯类聚合物、或聚苯乙烯,所述第一、第二有机缓冲层的厚度均为4-8μm。
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EP16919480.0A EP3531454B1 (en) | 2016-10-20 | 2016-12-13 | Oled display device and manufacturing method thereof |
KR1020197014301A KR102290118B1 (ko) | 2016-10-20 | 2016-12-13 | Oled 디스플레이 및 그 제작 방법 |
US15/328,895 US10062866B2 (en) | 2016-10-20 | 2016-12-13 | OLED display and manufacturing method thereof |
JP2019520835A JP6734993B2 (ja) | 2016-10-20 | 2016-12-13 | Oledディスプレイ及びその製造方法 |
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US10062866B2 (en) | 2018-08-28 |
EP3531454A1 (en) | 2019-08-28 |
US20180212191A1 (en) | 2018-07-26 |
CN106384743A (zh) | 2017-02-08 |
CN106384743B (zh) | 2019-12-24 |
JP2019533291A (ja) | 2019-11-14 |
KR20190067880A (ko) | 2019-06-17 |
JP6734993B2 (ja) | 2020-08-05 |
KR102290118B1 (ko) | 2021-08-17 |
EP3531454A4 (en) | 2020-07-29 |
EP3531454B1 (en) | 2022-08-24 |
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