WO2018086191A1 - Oled显示器及其制作方法 - Google Patents

Oled显示器及其制作方法 Download PDF

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WO2018086191A1
WO2018086191A1 PCT/CN2016/110061 CN2016110061W WO2018086191A1 WO 2018086191 A1 WO2018086191 A1 WO 2018086191A1 CN 2016110061 W CN2016110061 W CN 2016110061W WO 2018086191 A1 WO2018086191 A1 WO 2018086191A1
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layer
diamond
inorganic passivation
organic buffer
layers
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PCT/CN2016/110061
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English (en)
French (fr)
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金江江
徐湘伦
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武汉华星光电技术有限公司
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Priority to US15/328,897 priority Critical patent/US10050230B1/en
Publication of WO2018086191A1 publication Critical patent/WO2018086191A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/841—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants

Definitions

  • the present invention relates to the field of flat panel display technologies, and in particular, to an OLED display and a method of fabricating the same.
  • OLED Organic Light-Emitting Diode
  • OLED display technology is different from traditional liquid crystal display technology. It does not require a backlight. It uses a very thin coating of organic materials and a glass substrate. When there is current, these organic materials will emit light. However, since organic materials are easily reacted with water vapor or oxygen, as an organic material-based display device, the OLED display has a very high requirement for packaging, and therefore, the sealing of the inside of the device is improved by the packaging of the OLED device, and the external environment is isolated as much as possible. It is essential for stable illumination of OLED devices.
  • a thin film package in which a laminated film is packaged for an OLED device, wherein the film material selected by the method is also various, and the diamond-like carbon (DLC) is characterized by good chemical inertness, high thermal conductivity, and high density. Widely used in OLED package structures.
  • the patent document US20060078677 discloses an OLED package structure comprising a substrate, an OLED device disposed on the substrate, and a thin film encapsulation layer disposed on the substrate and covering the OLED device, wherein the thin film encapsulation layer comprises three layers alternately stacked.
  • Layer DLC layer and 2 layers of silicon or nitrogen-containing inorganic material layer although this layer alternately can effectively block external water oxygen, but because of the contradiction between DLC transmittance and blocking water oxygen capacity, for top-emitting devices, if the DLC water-proof oxygen capacity is to be enhanced, this means that the transmittance will be reduced, and the patent does not explicitly state this problem.
  • 3M Company discloses an OLED packaging process in the patent document US20080196664, specifically, sequentially covering the adhesive layer, the polystyrene layer, and the cathode on the cathode of the OLED device.
  • the DLC layer covering the adhesive layer and the polystyrene layer although this packaging method can also effectively block the external water and oxygen attack, the packaging method is the same as the above-mentioned patent disclosure, and the DLC water-proof oxygen capacity and permeability The relationship between the rates is lacking.
  • the package structure in which DLC is alternated with other inorganic materials, and the package structure specifically includes an organic cover layer provided on the OLED device, and an alternating arrangement on the organic cover layer, in the patent document US20150340653.
  • the laminated 3-layer DLC layer and the 2-layer inorganic layer, for the package structure the addition of DLC can effectively fill the cracks in the inorganic layer and improve the barrier property of water and oxygen.
  • the preparation process of DLC and other inorganic layers is not described in detail in this patent document. If the structure is used for the top emitting element, the DLC has a high barrier to water and oxygen, and its transmittance will be This decreases, which increases the loss of light and reduces device efficiency.
  • the patent document US20040056269 discloses a package structure in which DLC is alternated with an organic material. Although such a structure can be used for a top-emission type flexible member, the patent document does not describe the transmittance of the DLC in detail.
  • the application of DLC in the field of OLED packaging basically adopts the DLC/inorganic or DLC/organic alternating structure, and the DLC covers the functional layer under the DLC.
  • Such a packaging method will bring the contradiction between DLC blocking water oxygen capacity and transmittance.
  • An object of the present invention is to provide an OLED display in which a diamond-like layer is disposed on an outer side of an organic buffer layer in a thin film encapsulation layer, which not only effectively blocks external water and oxygen from damaging the OLED device from the side, but also avoids light passing through the top emitting device.
  • the problem of loss caused by diamond-like is to provide an OLED display in which a diamond-like layer is disposed on an outer side of an organic buffer layer in a thin film encapsulation layer, which not only effectively blocks external water and oxygen from damaging the OLED device from the side, but also avoids light passing through the top emitting device. The problem of loss caused by diamond-like.
  • Another object of the present invention is to provide a method for fabricating an OLED display.
  • the diamond-like layer is used for lateral packaging, and a diamond-like layer is disposed on the outer side of the organic buffer layer in the thin film encapsulation layer, which can effectively block external water and oxygen from the side.
  • the damage of the OLED device avoids the problem that the light of the top emitting device is lost through the diamond-like.
  • the present invention provides an OLED display, comprising: a substrate, an OLED device disposed on the substrate, and a thin film encapsulation layer disposed on the substrate and the OLED device and covering the OLED device;
  • the thin film encapsulation layer includes at least two inorganic passivation layers, at least one organic buffer layer, and at least one diamond-like layer; in the thin film encapsulation layer, each diamond-like layer corresponds to an organic buffer layer In the same layer, the inorganic passivation layer and the organic buffer layer are alternately stacked, the inorganic passivation layer and the diamond-like layer are alternately stacked, and the inorganic passivation layer is more than the organic buffer layer and the diamond-like layer.
  • the layer has one more layer on the layer;
  • each organic buffer layer is smaller than the size of the adjacent inorganic passivation layer below, so that the adjacent inorganic passivation layer under each organic buffer layer corresponds to the outer edge of the organic buffer layer and the outer side of the inorganic passivation layer.
  • a portion between the edges forms a stepped region, and the diamond-like layer is disposed on the corresponding stepped region and covers the stepped region.
  • the material of the inorganic passivation layer is Al 2 O 3 , ZrO 2 , ZnO 2 , SiNx, SiCN, SiOx, or TiO 2 , the inorganic passivation layer has a thickness of 0.5-1 ⁇ m;
  • the material of the organic buffer layer is a polyacrylate polymer, a polycarbonate polymer, or polystyrene, and the organic buffer layer has a thickness of 1-10 ⁇ m;
  • the diamond-like layer has a thickness of 2 to 10 ⁇ m.
  • the thin film encapsulation layer comprises 2-5 inorganic passivation layers, 1-4 organic buffer layers, and 1-4 diamond-like layers.
  • the thin film encapsulation layer comprises two inorganic passivation layers, an organic buffer layer, and a diamond-like layer, wherein the two inorganic passivation layers are first and second inorganic passivation from bottom to top, respectively.
  • a step region formed between the outer edge of the first inorganic buffer layer and the outer edge of the first inorganic passivation layer is a first step region, and the first diamond-like layer is disposed on The first step area is covered on the first step area.
  • the thin film encapsulation layer comprises three inorganic passivation layers, two organic buffer layers, and two diamond-like layers, and the three inorganic passivation layers are first, second, and third respectively from bottom to top.
  • An inorganic passivation layer wherein the two organic buffer layers are first and second organic buffer layers from bottom to top, and the two diamond-like layers are first and second diamond-like layers from bottom to top;
  • a step region formed between the outer edge of the first inorganic buffer layer and the outer edge of the first inorganic passivation layer is a first step region, and the first diamond-like layer is disposed on The first step region covers and covers the first step region;
  • the second inorganic passivation layer corresponds to a step region formed between an outer edge of the second organic buffer layer and an outer edge of the second inorganic passivation layer In the two step regions, the second diamond-like layer is disposed on the second step region and covers the second step region.
  • the invention also provides a method for manufacturing an OLED display, comprising the following steps:
  • Step 1 providing a substrate, forming an OLED device on the substrate;
  • Step 2 forming a thin film encapsulation layer covering the OLED device on the substrate and the OLED device to obtain an OLED display;
  • the thin film encapsulation layer comprises at least two inorganic passivation layers and at least one organic buffer a layer, and at least one layer of diamond-like layer; in the thin film encapsulation layer, each type of diamond layer and the organic buffer layer belong to the same layer, and the inorganic passivation layer and the organic buffer layer are alternately stacked, and the inorganic passivation layer And the diamond-like layer are alternately stacked, and the inorganic passivation layer has one more layer than the organic buffer layer and the diamond-like layer;
  • each organic buffer layer is smaller than the size of the adjacent inorganic passivation layer below, so that the adjacent inorganic passivation layer under each organic buffer layer corresponds to the outer edge of the organic buffer layer and the outer side of the inorganic passivation layer.
  • a portion between the edges forms a stepped region, and the diamond-like layer is disposed on the corresponding stepped region and covers the stepped region.
  • the inorganic passivation layer is formed by a plasma enhanced chemical vapor deposition method, an atomic force deposition method, a pulsed laser deposition method, or a sputtering deposition method, and the material of the inorganic passivation layer is Al 2 O 3 . , ZrO 2 , ZnO 2 , SiNx, SiCN, SiOx, or TiO 2 , the inorganic passivation layer has a thickness of 0.5-1 ⁇ m;
  • the organic buffer layer is formed by inkjet printing, plasma enhanced chemical vapor deposition, screen printing, or slit coating, and the material of the organic buffer layer is a polyacrylate polymer. a polycarbonate polymer, or polystyrene, the organic buffer layer has a thickness of 1-10 ⁇ m;
  • the diamond-like layer is formed by deposition using a mask; the diamond-like layer has a thickness of 2-10 ⁇ m.
  • the thin film encapsulation layer formed in the step 2 includes 2-5 inorganic passivation layers, 1-4 organic buffer layers, and 1-4 diamond-like layers.
  • the thin film encapsulation layer formed in the step 2 includes two inorganic passivation layers, an organic buffer layer, and a diamond-like layer, and the two inorganic passivation layers are first from bottom to top.
  • a second inorganic passivation layer the first organic buffer layer is a first organic buffer layer, and the first diamond-like layer is a first diamond-like layer;
  • the step 2 specifically includes:
  • Step 21 forming a first inorganic passivation layer covering the OLED device on the substrate and the OLED device;
  • Step 22 forming a first organic buffer layer on the first inorganic passivation layer, a size of the first organic buffer layer is smaller than a size of the first inorganic passivation layer, and the first inorganic passivation layer corresponds to a portion between an outer edge of the first organic buffer layer and an outer edge of the first inorganic passivation layer forms a first step region;
  • Step 23 forming a first diamond-like layer covering the first step region on the first step region;
  • Step 24 forming a second inorganic passivation layer covering the first organic buffer layer and the first diamond-like layer on the first organic buffer layer and the first diamond-like layer.
  • the thin film encapsulation layer comprises three inorganic passivation layers, two organic buffer layers, and two diamond-like layers, and the three inorganic passivation layers are first, second, and third from bottom to top, respectively.
  • An inorganic passivation layer wherein the two organic buffer layers are first and second organic buffer layers from bottom to top, and the two diamond-like layers are first and second diamond-like layers from bottom to top;
  • the step 2 specifically includes:
  • Step 21 forming a first inorganic passivation layer covering the OLED device on the substrate and the OLED device;
  • Step 22 forming a first organic buffer layer on the first inorganic passivation layer, a size of the first organic buffer layer is smaller than a size of the first inorganic passivation layer, and the first inorganic passivation layer corresponds to a portion between an outer edge of the first organic buffer layer and an outer edge of the first inorganic passivation layer forms a first step region;
  • Step 23 forming a first diamond-like layer covering the first step region on the first step region;
  • Step 24 forming a second inorganic passivation layer covering the first organic buffer layer and the first diamond-like layer on the first organic buffer layer and the first diamond-like layer;
  • Step 25 forming a second organic buffer layer on the second inorganic passivation layer, the size of the second organic buffer layer is smaller than the size of the second inorganic passivation layer, and the second inorganic passivation layer corresponds to a portion between an outer edge of the second organic buffer layer and an outer edge of the second inorganic passivation layer forms a second step region;
  • Step 26 forming a second diamond-like layer covering the second step region on the second step region;
  • Step 27 forming a third inorganic passivation layer covering the second organic buffer layer and the second diamond-like layer on the second organic buffer layer and the second diamond-like layer.
  • the present invention also provides an OLED display, comprising: a substrate, an OLED device disposed on the substrate, and a thin film encapsulation layer disposed on the substrate and the OLED device and covering the OLED device;
  • the thin film encapsulation layer includes at least two inorganic passivation layers, at least one organic buffer layer, and at least one diamond-like layer; in the thin film encapsulation layer, each diamond-like layer corresponds to an organic buffer layer In the same layer, the inorganic passivation layer and the organic buffer layer are alternately stacked, the inorganic passivation layer and the diamond-like layer are alternately stacked, and the inorganic passivation layer has one more layer than the organic buffer layer and the diamond-like layer;
  • each organic buffer layer is smaller than the size of the adjacent inorganic passivation layer below, so that the adjacent inorganic passivation layer under each organic buffer layer corresponds to the outer edge of the organic buffer layer and the outer side of the inorganic passivation layer. a portion between the edges forms a step region, and the diamond-like layer is disposed on the corresponding step region and covers the step region;
  • the material of the inorganic passivation layer is Al 2 O 3 , ZrO 2 , ZnO 2 , SiNx, SiCN, SiOx, or TiO 2 , and the inorganic passivation layer has a thickness of 0.5-1 ⁇ m;
  • the material of the organic buffer layer is a polyacrylate polymer, a polycarbonate polymer, or polystyrene, and the organic buffer layer has a thickness of 1-10 ⁇ m;
  • the thickness of the diamond-like layer is 2-10 ⁇ m
  • the thin film encapsulation layer comprises 2-5 inorganic passivation layers, 1-4 organic buffer layers, and 1-4 diamond-like layers.
  • an adjacent inorganic passivation layer under each organic buffer layer in the thin film encapsulation layer corresponds to a portion between an outer edge of the organic buffer layer and an outer edge of the inorganic passivation layer
  • Forming a stepped region each of the stepped regions is provided with a diamond-like layer covering the stepped region, that is, the present invention applies the diamond-like layer to the lateral package
  • the outer side of each of the organic buffer layer in the thin film encapsulation layer is provided with a diamond-like layer Therefore, it can effectively block the damage of the external water and oxygen from the side to the OLED device, and avoid the problem that the light of the top emitting device is lost through the diamond-like device, thereby avoiding the barrier of water and oxygen in the application of the diamond-like diamond.
  • the diamond-like layer is used for the lateral encapsulation, and the diamond-like layer is disposed on the outer side of the organic buffer layer in the thin film encapsulation layer, which can effectively block the external water and oxygen from the side The damage of the OLED device, and avoiding the problem that the light of the top emitting device is lost through the diamond-like device, thereby being able to obtain High-life OLED devices without affecting the light output of OLED devices.
  • FIG. 1 is a schematic structural view of a first embodiment of an OLED display of the present invention
  • FIG. 2 is a schematic structural view of a second embodiment of an OLED display of the present invention.
  • FIG. 3 is a schematic flow chart of a method for fabricating an OLED display of the present invention.
  • FIG. 5 is a schematic diagram of the first and second steps of the method for fabricating the OLED display of the present invention.
  • FIG. 6 is a schematic diagram of the first and second steps of the method for fabricating the OLED display of the present invention.
  • step 26 of a second embodiment of a method of fabricating an OLED display of the present invention is a schematic diagram of step 26 of a second embodiment of a method of fabricating an OLED display of the present invention.
  • the OLED display includes a substrate 100, an OLED device 200 disposed on the substrate 100, and The substrate 100, and the OLED device 200 and covering the thin film encapsulation layer 300 of the OLED device 200;
  • the thin film encapsulation layer 300 includes at least two inorganic passivation layers, at least one organic buffer layer, and at least one diamond-like layer; in the thin film encapsulation layer 300, each diamond layer and an organic buffer layer are Corresponding to the same layer, the inorganic passivation layer and the organic buffer layer are alternately stacked, the inorganic passivation layer and the diamond-like layer are alternately stacked, and the inorganic passivation layer is one layer higher than the organic buffer layer and the diamond-like layer. ;
  • each organic buffer layer is smaller than the size of the adjacent inorganic passivation layer below, so that the adjacent inorganic passivation layer under each organic buffer layer corresponds to the outer edge of the organic buffer layer and the outer side of the inorganic passivation layer.
  • a portion between the edges forms a stepped region, and the diamond-like layer is disposed on the corresponding stepped region and covers the stepped region.
  • the OLED display of the present invention covers the step region between the outer edge of the organic buffer layer and the outer edge of the inorganic passivation layer by an adjacent inorganic passivation layer under each organic buffer layer in the thin film encapsulation layer.
  • the diamond-like layer in the step region that is, the diamond-like layer is applied to the lateral package, so that a diamond-like layer is disposed on the outer side of each organic buffer layer in the thin film encapsulation layer, thereby not only effectively blocking the external water and oxygen from the side to the OLED device. Damage, and avoid the loss of light from the top-emitting device through the diamond-like device, thereby avoiding the contradiction between the blocking of water oxygen capacity and the transmittance when the diamond-like diamond is applied to the package.
  • the material of the inorganic passivation layer is aluminum oxide (Al 2 O 3 ), zirconium dioxide (ZrO 2 ), zinc dioxide (ZnO 2 ), silicon nitride (SiNx), silicon carbonitride (SiCN). ), silicon oxide (SiOx), or titanium dioxide (TiO 2 ), the inorganic passivation layer having a thickness of 0.5 to 1 ⁇ m.
  • the material of the organic buffer layer is a polyacrylate polymer (for example, acryl), a polycarbonate polymer, or polystyrene, and the organic buffer layer has a thickness of 1-10 ⁇ m.
  • the diamond-like layer has a thickness of 2 to 10 ⁇ m.
  • the thin film encapsulation layer 300 includes 2-5 inorganic passivation layers, 1-4 organic buffer layers, and 1-4 diamond-like layers.
  • the thin film encapsulation layer 300 includes two inorganic passivation layers, one organic buffer layer, and one diamond-like layer, and the two inorganic passivation layers are respectively from bottom to top.
  • a second inorganic buffer layer 311, 312 the first organic buffer layer 321 is a first organic buffer layer 321
  • the first diamond-like layer is a first diamond-like layer 331;
  • a step region formed by the first inorganic passivation layer 311 corresponding to an outer edge of the first organic buffer layer 321 and an outer edge of the first inorganic passivation layer 311 is a first step region, the first diamond type
  • the layer 331 is disposed on the first step region and covers the first step region.
  • the thin film encapsulation layer 300 includes three inorganic passivation layers and two a layer of an organic buffer layer and two layers of diamond-like layers, wherein the three inorganic passivation layers are first, second, and third inorganic passivation layers 311, 312, and 313 from bottom to top, respectively, and the two organic buffer layers are The first and second organic buffer layers 321 and 322 are respectively the first and second diamond-like layers 331, 332 from bottom to top.
  • a step region formed by the first inorganic passivation layer 311 corresponding to an outer edge of the first organic buffer layer 321 and an outer edge of the first inorganic passivation layer 311 is a first step region, the first diamond type
  • the layer 331 is disposed on the first step region and covers the first step region;
  • the second inorganic passivation layer 312 corresponds to the outer edge of the second organic buffer layer 322 and the outer edge of the second inorganic passivation layer 312
  • the stepped region formed therebetween is a second stepped region, and the second diamond-like layer 332 is disposed on the second stepped region and covers the second stepped region.
  • the present invention further provides a method for fabricating an OLED display. Specifically, the first embodiment includes the following steps:
  • Step 1 Providing a substrate 100 on which an OLED device 200 is formed.
  • Step 2 Forming a thin film encapsulation layer 300 covering the OLED device 200 on the substrate 100 and the OLED device 200 to obtain an OLED display.
  • the thin film encapsulation layer 300 includes at least two inorganic passivation layers, at least one organic buffer layer, and at least one diamond-like layer; in the thin film encapsulation layer 300, each type of diamond layer and one layer of organic buffer The layers are correspondingly in the same layer, the inorganic passivation layer and the organic buffer layer are alternately stacked, the inorganic passivation layer and the diamond-like layer are alternately stacked, and the inorganic passivation layer is more than the organic buffer layer and the diamond-like layer in the number of layers. layer;
  • each organic buffer layer is smaller than the size of the adjacent inorganic passivation layer below, so that the adjacent inorganic passivation layer under each organic buffer layer corresponds to the outer edge of the organic buffer layer and the outer side of the inorganic passivation layer. a portion between the edges forms a stepped region, and the diamond-like layer is disposed in a corresponding The step area is covered on the step area.
  • the diamond-like layer is applied to the lateral package, so that a diamond-like layer is disposed on the outer side of each organic buffer layer in the thin film encapsulation layer, thereby not only effectively blocking the external water and oxygen from the side to the OLED.
  • the damage of the device, and the loss of the light of the top emitting device through the diamond-like device is avoided, thereby avoiding the contradiction between blocking the water oxygen capacity and the transmittance when the diamond is applied to the package.
  • the inorganic passivation layer is subjected to plasma enhanced chemical vapor deposition (PECVD), atomic force deposition (ALD), pulsed laser deposition (PLD), or sputtering deposition (Sputter).
  • PECVD plasma enhanced chemical vapor deposition
  • ALD atomic force deposition
  • PLD pulsed laser deposition
  • Sputter sputtering deposition
  • the material of the inorganic passivation layer is Al 2 O 3 , ZrO 2 , ZnO 2 , SiNx, SiCN, SiO x , or TiO 2 , and the inorganic passivation layer has a thickness of 0.5-1 ⁇ m.
  • the organic buffer layer is formed by inkjet printing (IJP), plasma enhanced chemical vapor deposition, screen printing, or slot coating.
  • the material of the organic buffer layer is a polyacrylate polymer (for example, acrylic), a polycarbonate polymer, or polystyrene, and the organic buffer layer has a thickness of 1-10 ⁇ m.
  • the diamond-like layer is formed by deposition using a mask; the diamond-like layer has a thickness of 2-10 ⁇ m.
  • the thin film encapsulation layer 300 formed in the step 2 includes 2-5 inorganic passivation layers, 1-4 organic buffer layers, and 1-4 diamond-like layers.
  • the thin film encapsulation layer 300 formed in the step 2 includes two inorganic passivation layers, one organic buffer layer, and one diamond-like layer, and the two inorganic passivation layers are
  • the first and second inorganic passivation layers 311 and 312 are respectively the first organic buffer layer 321
  • the first diamond-like layer is the first diamond-like layer 331 .
  • step 2 specifically includes:
  • Step 21 as shown in FIG. 4, forming a first inorganic passivation layer 311 covering the OLED device 200 on the substrate 100, and the OLED device 200;
  • Step 22 as shown in FIG. 5, forming a first organic buffer layer 321 on the first inorganic passivation layer 311, the size of the first organic buffer layer 321 being smaller than the size of the first inorganic passivation layer 311 a portion of the first inorganic passivation layer 311 corresponding to an outer edge of the first organic buffer layer 321 and an outer edge of the first inorganic passivation layer 311 forming a first step region;
  • Step 23 as shown in FIG. 6, forming a first diamond-like layer 331 covering the first step region on the first step region;
  • Step 24 forming a second inorganic passivation layer covering the first organic buffer layer 321 and the first diamond-like layer 331 on the first organic buffer layer 321 and the first diamond-like layer 331 312, thereby obtaining an OLED display as shown in FIG.
  • the thin film encapsulation layer 300 formed in the step 2 includes three inorganic passivation layers, two organic buffer layers, and two a layer of diamond-like layer, wherein the three inorganic passivation layers are first, second, and third inorganic passivation layers 311, 312, and 313 from bottom to top, respectively, and the two organic buffer layers are first to the first, a second organic buffer layer 321 , 322 , the two diamond-like layers are the first and second diamond-like layers 331 , 332 from bottom to top;
  • step 2 further includes:
  • Step 25 as shown in FIG. 7, a second organic buffer layer 322 is formed on the second inorganic passivation layer 312, and the size of the second organic buffer layer 322 is smaller than the size of the second inorganic passivation layer 312.
  • the second inorganic passivation layer 312 forms a second step region corresponding to a portion between the outer edge of the second organic buffer layer 322 and the outer edge of the second inorganic passivation layer 312;
  • Step 26 as shown in Figure 8, forming a second diamond-like layer 332 covering the second step region on the second step region;
  • Step 27 forming a third inorganic passivation layer 313 covering the second organic buffer layer 322 and the second diamond-like layer 332 on the second organic buffer layer 322 and the second diamond-like layer 332, thereby obtaining The OLED display shown in Figure 2.
  • an adjacent inorganic passivation layer under each organic buffer layer in the thin film encapsulation layer corresponds to a portion between the outer edge of the organic buffer layer and the outer edge of the inorganic passivation layer.
  • each of the step regions is provided with a diamond-like layer covering the step region, that is, the diamond-like layer is applied to the lateral package, and a diamond-like layer is disposed on the outer side of each of the organic buffer layers in the film encapsulation layer.
  • the diamond-like layer is used for the lateral encapsulation, and the diamond-like layer is disposed outside the organic buffer layer in the thin film encapsulation layer, which can effectively block the external water and oxygen from the side to the OLED
  • the damage of the device, and the loss of the light of the top emitting device through the diamond-like device is avoided, so that a long life can be obtained.
  • OLED devices do not affect the light output of OLED devices.

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Abstract

一种OLED显示器及其制作方法，该OLED显示器的薄膜封装层（300）中每一有机缓冲层（321）下方相邻的无机钝化层（311）对应该有机缓冲层的外侧边缘和该无机钝化层的外侧边缘之间的部分形成台阶区，每一台阶区上设置有覆盖该台阶区的类金刚石层（331），将类金刚石应用于侧向封装，薄膜封装层中每一有机缓冲层的外侧均设有一层类金刚石层，从而不但能够有效阻隔外界水氧从侧面对OLED器件（200）的伤害，而且避免了顶发射器件的光经过类金刚石而造成损失的问题。

Description

OLED显示器及其制作方法 技术领域
本发明涉及平板显示技术领域，尤其涉及一种OLED显示器及其制作方法。
背景技术
有机发光二极管(Organic Light-Emitting Diode，OLED)显示器，具备自发光、高亮度、宽视角、高对比度、可挠曲、低能耗等特性，因此受到广泛的关注，并作为新一代的显示方式，已开始逐渐取代传统液晶显示器。目前，从小尺寸的移动电话显示屏，到大尺寸高分辨率的平板电视，应用OLED显示面板都成为一种高端的象征。
OLED显示技术与传统的液晶显示技术不同，无需背光灯，采用非常薄的有机材料涂层和玻璃基板，当有电流通过时，这些有机材料就会发光。但是由于有机材料易与水汽或氧气反应，作为基于有机材料的显示设备，OLED显示屏对封装的要求非常高，因此，通过OLED器件的封装提高器件内部的密封性，尽可能的与外部环境隔离，对于OLED器件的稳定发光至关重要。
目前对于OLED器件的封装，最常用的方法是利用紫外光固化胶加硬质封装基板(如玻璃或金属)覆盖封装，但是该方法并不适用于柔性器件，因此，也有技术方案采用无机/有机叠层的薄膜对OLED器件进行封装的薄膜封装(TFE)，其中该方法所选用的薄膜材料也多种多样，类金刚石(DLC)因具有良好的化学惰性、高热导率以及高致密度而被广泛应用于OLED封装结构之中。
例如，专利文件US20060078677公开了一种OLED封装结构，包括基板、设于基板上的OLED器件、及设于基板上并覆盖OLED器件的薄膜封装层，其中，所述薄膜封装层包括交替层叠的3层DLC层和2层含硅或氮的无机材料层，虽然这种层层交替的方式能够有效的阻隔外界的水氧，但由于DLC的透过率和阻隔水氧能力之间呈矛盾关系，对于顶发射器件，如果要增强DLC防水氧能力，这就意味着其透过率就会随之降低，而该专利对此问题并未进行明确说明。
再例如，3M公司在专利文件US20080196664上公开了一种OLED封装工艺，具体为，在OLED器件的阴极上依次覆盖粘合剂层、聚苯乙烯层、 以及覆盖粘合剂层及聚苯乙烯层的DLC层，虽然这种封装方式也可以有效的阻隔外界的水氧侵蚀，然而这种封装方式和前述专利公开的一样，对DLC防水氧能力和透过率之间的关系缺乏说明。
再例如，最近，InnoLux公司在专利文件US20150340653上报道了一种DLC与其他无机材料交替的封装结构，该封装结构具体包括设在OLED器件上的有机覆盖层、及设置在有机覆盖层上的交替层叠的3层DLC层和2层无机层，对于该封装结构，DLC的加入能够有效的填充无机层中的裂缝，提高其阻隔水氧特性。然而，DLC以及其他无机层的制备工艺在该专利文件中却没有详细说明，同样这种结构如果用于顶发射元件，要保证DLC具有很高的阻隔水氧能力，那么它的透过率会随之下降，这样会增加光的损失，降低器件效率。
再例如，专利文件US20040056269公开了一种DLC与有机材料交替的封装结构，虽然这种结构可用于顶发射式柔性元件，但是该专利文件对于DLC的透过率方面也并未做详细说明。
因此，通过上述案例对DLC的应用进行详细总结后可以看出，目前DLC在OLED封装领域的应用基本采用DLC/无机或DLC/有机交替的结构，且DLC整面覆盖DLC下方的功能层，然而，这样的封装方式都会带来DLC阻隔水氧能力与透过率之间的矛盾。
发明内容
本发明的目的在于提供一种OLED显示器，薄膜封装层中有机缓冲层的外侧设有类金刚石层，不但能够有效阻隔外界水氧从侧面对OLED器件的伤害，而且避免了顶发射器件的光经过类金刚石而造成损失的问题。
本发明的另一目的在于提供一种OLED显示器的制作方法，将类金刚石用于侧向封装，在薄膜封装层中有机缓冲层的外侧设置类金刚石层，不但能够有效阻隔外界水氧从侧面对OLED器件的伤害，而且避免了顶发射器件的光经过类金刚石而造成损失的问题。
为实现上述目的，本发明提供一种OLED显示器，包括基板、设于所述基板上的OLED器件、及设于所述基板、及OLED器件上并覆盖OLED器件的薄膜封装层；
所述薄膜封装层包括至少两层无机钝化层、至少一层有机缓冲层、及至少一层类金刚石层；所述薄膜封装层中，每一类金刚石层与一层有机缓冲层相对应属于同层，无机钝化层和有机缓冲层交替层叠设置，无机钝化层和类金刚石层交替层叠设置，且无机钝化层比有机缓冲层、及类金刚石 层在层数上多一层；
每一有机缓冲层的尺寸比下方相邻的无机钝化层的尺寸小，从而每一有机缓冲层下方相邻的无机钝化层对应该有机缓冲层的外侧边缘和该无机钝化层的外侧边缘之间的部分形成台阶区，所述类金刚石层设置于对应的台阶区上并覆盖该台阶区。
所述无机钝化层的材料为Al2O3、ZrO2、ZnO2、SiNx、SiCN、SiOx、或TiO2，所述无机钝化层的厚度为0.5-1μm；
所述有机缓冲层的材料为聚丙烯酸酯类聚合物、聚碳酸酯类聚合物、或聚苯乙烯，所述有机缓冲层的厚度为1-10μm；
所述类金刚石层的厚度为2-10μm。
所述薄膜封装层包括2-5层无机钝化层、1-4层有机缓冲层、及1-4层类金刚石层。
可选地，所述薄膜封装层包括两层无机钝化层、一层有机缓冲层、及一层类金刚石层，该两层无机钝化层由下至上分别为第一、第二无机钝化层，该一层有机缓冲层为第一有机缓冲层，该一层类金刚石层为第一类金刚石层；
所述第一无机钝化层对应所述第一有机缓冲层的外侧边缘与第一无机钝化层的外侧边缘之间形成的台阶区为第一台阶区，所述第一类金刚石层设置于第一台阶区上并覆盖该第一台阶区。
可选地，所述薄膜封装层包括三层无机钝化层、两层有机缓冲层、及两层类金刚石层，该三层无机钝化层由下至上分别为第一、第二、第三无机钝化层，该两层有机缓冲层由下至上分别为第一、第二有机缓冲层，该两层类金刚石层由下至上分别为第一、第二类金刚石层；
所述第一无机钝化层对应所述第一有机缓冲层的外侧边缘与第一无机钝化层的外侧边缘之间形成的台阶区为第一台阶区，所述第一类金刚石层设置于第一台阶区上并覆盖该第一台阶区；所述第二无机钝化层对应所述第二有机缓冲层的外侧边缘与第二无机钝化层的外侧边缘之间形成的台阶区为第二台阶区，所述第二类金刚石层设置于第二台阶区上并覆盖该第二台阶区。
本发明还提供一种OLED显示器的制作方法，包括如下步骤：
步骤1、提供基板，在所述基板上形成OLED器件；
步骤2、在所述基板、及OLED器件上形成覆盖OLED器件的薄膜封装层，得到OLED显示器；
其中，所述薄膜封装层包括至少两层无机钝化层、至少一层有机缓冲 层、及至少一层类金刚石层；所述薄膜封装层中，每一类金刚石层与一层有机缓冲层相对应属于同层，无机钝化层和有机缓冲层交替层叠设置，无机钝化层和类金刚石层交替层叠设置，且无机钝化层比有机缓冲层、及类金刚石层在层数上多一层；
每一有机缓冲层的尺寸比下方相邻的无机钝化层的尺寸小，从而每一有机缓冲层下方相邻的无机钝化层对应该有机缓冲层的外侧边缘和该无机钝化层的外侧边缘之间的部分形成台阶区，所述类金刚石层设置于对应的台阶区上并覆盖该台阶区。
所述步骤2中，所述无机钝化层通过等离子体增强化学气相沉积法、原子力沉积法、脉冲激光沉积法、或溅镀沉积法形成，所述无机钝化层的材料为Al2O3、ZrO2、ZnO2、SiNx、SiCN、SiOx、或TiO2，所述无机钝化层的厚度为0.5-1μm；
所述步骤2中，所述有机缓冲层通过喷墨印刷、等离子体增强化学气相沉积法、丝网印刷、或狭缝涂布形成，所述有机缓冲层的材料为聚丙烯酸酯类聚合物、聚碳酸酯类聚合物、或聚苯乙烯，所述有机缓冲层的厚度为1-10μm；
所述步骤2中，所述类金刚石层利用掩模板通过沉积形成；所述类金刚石层的厚度为2-10μm。
所述步骤2中形成的薄膜封装层包括2-5层无机钝化层、1-4层有机缓冲层、及1-4层类金刚石层。
可选地，所述步骤2中形成的薄膜封装层包括两层无机钝化层、一层有机缓冲层、及一层类金刚石层，该两层无机钝化层由下至上分别为第一、第二无机钝化层，该一层有机缓冲层为第一有机缓冲层，该一层类金刚石层为第一类金刚石层；
所述步骤2具体包括：
步骤21、在所述基板、及OLED器件上形成覆盖OLED器件的第一无机钝化层；
步骤22、在所述第一无机钝化层上形成第一有机缓冲层，所述第一有机缓冲层的尺寸小于所述第一无机钝化层的尺寸，所述第一无机钝化层对应所述第一有机缓冲层的外侧边缘和第一无机钝化层的外侧边缘之间的部分形成第一台阶区；
步骤23、在所述第一台阶区上形成覆盖第一台阶区的第一类金刚石层；
步骤24、在所述第一有机缓冲层、及第一类金刚石层上形成覆盖所述第一有机缓冲层、及第一类金刚石层的第二无机钝化层。
可选地，所述薄膜封装层包括三层无机钝化层、两层有机缓冲层、及两层类金刚石层，该三层无机钝化层由下至上分别为第一、第二、第三无机钝化层，该两层有机缓冲层由下至上分别为第一、第二有机缓冲层，该两层类金刚石层由下至上分别为第一、第二类金刚石层；
所述步骤2具体包括：
步骤21、在所述基板、及OLED器件上形成覆盖OLED器件的第一无机钝化层；
步骤22、在所述第一无机钝化层上形成第一有机缓冲层，所述第一有机缓冲层的尺寸小于所述第一无机钝化层的尺寸，所述第一无机钝化层对应所述第一有机缓冲层的外侧边缘和第一无机钝化层的外侧边缘之间的部分形成第一台阶区；
步骤23、在所述第一台阶区上形成覆盖第一台阶区的第一类金刚石层；
步骤24、在所述第一有机缓冲层、及第一类金刚石层上形成覆盖所述第一有机缓冲层、及第一类金刚石层的第二无机钝化层；
步骤25、在所述第二无机钝化层上形成第二有机缓冲层，所述第二有机缓冲层的尺寸小于所述第二无机钝化层的尺寸，所述第二无机钝化层对应所述第二有机缓冲层的外侧边缘和第二无机钝化层的外侧边缘之间的部分形成第二台阶区；
步骤26、在所述第二台阶区上形成覆盖第二台阶区的第二类金刚石层；
步骤27、在所述第二有机缓冲层、及第二类金刚石层上形成覆盖所述第二有机缓冲层、及第二类金刚石层的第三无机钝化层。
本发明还提供一种OLED显示器，包括基板、设于所述基板上的OLED器件、及设于所述基板、及OLED器件上并覆盖OLED器件的薄膜封装层；
所述薄膜封装层包括至少两层无机钝化层、至少一层有机缓冲层、及至少一层类金刚石层；所述薄膜封装层中，每一类金刚石层与一层有机缓冲层相对应属于同层，无机钝化层和有机缓冲层交替层叠设置，无机钝化层和类金刚石层交替层叠设置，且无机钝化层比有机缓冲层、及类金刚石层在层数上多一层；
每一有机缓冲层的尺寸比下方相邻的无机钝化层的尺寸小，从而每一有机缓冲层下方相邻的无机钝化层对应该有机缓冲层的外侧边缘和该无机钝化层的外侧边缘之间的部分形成台阶区，所述类金刚石层设置于对应的台阶区上并覆盖该台阶区；
其中，所述无机钝化层的材料为Al2O3、ZrO2、ZnO2、SiNx、SiCN、SiOx、或TiO2，所述无机钝化层的厚度为0.5-1μm；
所述有机缓冲层的材料为聚丙烯酸酯类聚合物、聚碳酸酯类聚合物、或聚苯乙烯，所述有机缓冲层的厚度为1-10μm；
所述类金刚石层的厚度为2-10μm；
其中，所述薄膜封装层包括2-5层无机钝化层、1-4层有机缓冲层、及1-4层类金刚石层。
本发明的有益效果：本发明的OLED显示器，薄膜封装层中每一有机缓冲层下方相邻的无机钝化层对应该有机缓冲层的外侧边缘和该无机钝化层的外侧边缘之间的部分形成台阶区，每一台阶区上设置有覆盖该台阶区的类金刚石层，即本发明将类金刚石应用于侧向封装，薄膜封装层中每一有机缓冲层的外侧均设有一层类金刚石层，从而不但能够有效阻隔外界水氧从侧面对OLED器件的伤害，而且避免了顶发射器件的光经过类金刚石而造成损失的问题，进而避免了类金刚石应用于封装时在阻隔水氧能力与透过率之间的矛盾；本发明的OLED显示器的制作方法，将类金刚石用于侧向封装，在薄膜封装层中有机缓冲层的外侧设置类金刚石层，不但能够有效阻隔外界水氧从侧面对OLED器件的伤害，而且避免了顶发射器件的光经过类金刚石而造成损失的问题，从而能够获得高寿命的OLED器件，而且不会影响OLED器件光的输出。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。
附图中，
图1为本发明的OLED显示器的第一实施例的结构示意图；
图2为本发明的OLED显示器的第二实施例的结构示意图；
图3为本发明的OLED显示器的制作方法的流程示意图；
图4为本发明的OLED显示器的制作方法的第一、及第二实施例的步骤21的示意图；
图5为本发明的OLED显示器的制作方法的第一、及第二实施例的步骤22的示意图；
图6为本发明的OLED显示器的制作方法的第一、及第二实施例的步骤23的示意图；
图7为本发明的OLED显示器的制作方法的第二实施例的步骤25的示意图；
图8为本发明的OLED显示器的制作方法的第二实施例的步骤26的示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，为本发明的OLED显示器的第一实施例的结构示意图，在本实施例中，所述OLED显示器包括基板100、设于所述基板100上的OLED器件200、及设于所述基板100、及OLED器件200上并覆盖OLED器件200的薄膜封装层300；
所述薄膜封装层300包括至少两层无机钝化层、至少一层有机缓冲层、及至少一层类金刚石层；所述薄膜封装层300中，每一类金刚石层与一层有机缓冲层相对应属于同层，无机钝化层和有机缓冲层交替层叠设置，无机钝化层和类金刚石层交替层叠设置，且无机钝化层比有机缓冲层、及类金刚石层在层数上多一层；
每一有机缓冲层的尺寸比下方相邻的无机钝化层的尺寸小，从而每一有机缓冲层下方相邻的无机钝化层对应该有机缓冲层的外侧边缘和该无机钝化层的外侧边缘之间的部分形成台阶区，所述类金刚石层设置于对应的台阶区上并覆盖该台阶区。
本发明的OLED显示器，通过在薄膜封装层中每一有机缓冲层下方相邻的无机钝化层对应该有机缓冲层的外侧边缘和该无机钝化层的外侧边缘之间的台阶区设置覆盖该台阶区的类金刚石层，即将类金刚石应用于侧向封装，使薄膜封装层中每一有机缓冲层的外侧均设有一层类金刚石层，从而不但能够有效阻隔外界水氧从侧面对OLED器件的伤害，而且避免了顶发射器件的光经过类金刚石而造成损失的问题，进而避免了类金刚石应用于封装时在阻隔水氧能力与透过率之间的矛盾。
具体地，所述无机钝化层的材料为氧化铝(Al2O3)、二氧化锆(ZrO2)、二氧化锌(ZnO2)、氮化硅(SiNx)、碳氮化硅(SiCN)、氧化硅(SiOx)、或二氧化钛(TiO2)，所述无机钝化层的厚度为0.5-1μm。
具体地，所述有机缓冲层的材料为聚丙烯酸酯类聚合物(例如，压克力)、聚碳酸酯类聚合物、或聚苯乙烯，所述有机缓冲层的厚度为1-10μm。
具体地，所述类金刚石层的厚度为2-10μm。
具体地，所述薄膜封装层300包括2-5层无机钝化层、1-4层有机缓冲层、及1-4层类金刚石层。
具体地，在本实施例中，所述薄膜封装层300包括两层无机钝化层、一层有机缓冲层、及一层类金刚石层，该两层无机钝化层由下至上分别为第一、第二无机钝化层311、312，该一层有机缓冲层为第一有机缓冲层321，该一层类金刚石层为第一类金刚石层331；
所述第一无机钝化层311对应所述第一有机缓冲层321的外侧边缘与第一无机钝化层311的外侧边缘之间形成的台阶区为第一台阶区，所述第一类金刚石层331设置于第一台阶区上并覆盖该第一台阶区。
请参阅图2，为本发明的OLED显示器的第二实施例的结构示意图，与上述第一实施例相比，在本实施例中，所述薄膜封装层300包括三层无机钝化层、两层有机缓冲层、及两层类金刚石层，该三层无机钝化层由下至上分别为第一、第二、第三无机钝化层311、312、313，该两层有机缓冲层由下至上分别为第一、第二有机缓冲层321、322，该两层类金刚石层由下至上分别为第一、第二类金刚石层331、332。所述第一无机钝化层311对应所述第一有机缓冲层321的外侧边缘与第一无机钝化层311的外侧边缘之间形成的台阶区为第一台阶区，所述第一类金刚石层331设置于第一台阶区上并覆盖该第一台阶区；所述第二无机钝化层312对应所述第二有机缓冲层322的外侧边缘与第二无机钝化层312的外侧边缘之间形成的台阶区为第二台阶区，所述第二类金刚石层332设置于第二台阶区上并覆盖该第二台阶区。其他与上述第一实施例相同，在此不再赘述。
基于上述OLED显示器，请参阅图3，本发明还提供一种OLED显示器的制作方法，具体地，其第一实施例包括如下步骤：
步骤1、提供基板100，在所述基板100上形成OLED器件200。
步骤2、在所述基板100、及OLED器件200上形成覆盖OLED器件200的薄膜封装层300，得到OLED显示器。
其中，所述薄膜封装层300包括至少两层无机钝化层、至少一层有机缓冲层、及至少一层类金刚石层；所述薄膜封装层300中，每一类金刚石层与一层有机缓冲层相对应属于同层，无机钝化层和有机缓冲层交替层叠设置，无机钝化层和类金刚石层交替层叠设置，且无机钝化层比有机缓冲层、及类金刚石层在层数上多一层；
每一有机缓冲层的尺寸比下方相邻的无机钝化层的尺寸小，从而每一有机缓冲层下方相邻的无机钝化层对应该有机缓冲层的外侧边缘和该无机钝化层的外侧边缘之间的部分形成台阶区，所述类金刚石层设置于对应的 台阶区上并覆盖该台阶区。
本发明的OLED显示器的制作方法，将类金刚石应用于侧向封装，使薄膜封装层中每一有机缓冲层的外侧均设有一层类金刚石层，从而不但能够有效阻隔外界水氧从侧面对OLED器件的伤害，而且避免了顶发射器件的光经过类金刚石而造成损失的问题，进而避免了类金刚石应用于封装时在阻隔水氧能力与透过率之间的矛盾。
具体地，所述步骤2中，所述无机钝化层通过等离子体增强化学气相沉积法(PECVD)、原子力沉积法(ALD)、脉冲激光沉积法(PLD)、或溅镀沉积法(Sputter)形成，所述无机钝化层的材料为Al2O3、ZrO2、ZnO2、SiNx、SiCN、SiOx、或TiO2，所述无机钝化层的厚度为0.5-1μm。
具体地，所述步骤2中，所述有机缓冲层通过喷墨印刷(IJP)、等离子体增强化学气相沉积法、丝网印刷(Screen printing)、或狭缝涂布(slot coating)形成，所述有机缓冲层的材料为聚丙烯酸酯类聚合物(例如，压克力)、聚碳酸酯类聚合物、或聚苯乙烯，所述有机缓冲层的厚度为1-10μm。
具体地，所述步骤2中，所述类金刚石层利用掩模板通过沉积形成；所述类金刚石层的厚度为2-10μm。
具体地，所述步骤2中形成的薄膜封装层300包括2-5层无机钝化层、1-4层有机缓冲层、及1-4层类金刚石层。
具体地，在本实施例中，所述步骤2中形成的薄膜封装层300包括两层无机钝化层、一层有机缓冲层、及一层类金刚石层，该两层无机钝化层由下至上分别为第一、第二无机钝化层311、312，该一层有机缓冲层为第一有机缓冲层321，该一层类金刚石层为第一类金刚石层331。
从而，所述步骤2具体包括：
步骤21、如图4所示，在所述基板100、及OLED器件200上形成覆盖OLED器件200的第一无机钝化层311；
步骤22、如图5所示，在所述第一无机钝化层311上形成第一有机缓冲层321，所述第一有机缓冲层321的尺寸小于所述第一无机钝化层311的尺寸，所述第一无机钝化层311对应所述第一有机缓冲层321的外侧边缘和第一无机钝化层311的外侧边缘之间的部分形成第一台阶区；
步骤23、如图6所示，在所述第一台阶区上形成覆盖第一台阶区的第一类金刚石层331；
步骤24、在所述第一有机缓冲层321、及第一类金刚石层331上形成覆盖所述第一有机缓冲层321、及第一类金刚石层331的第二无机钝化层 312，从而得到如图1所示的OLED显示器。
本发明的OLED显示器的制作方法的第二实施例，与上述第一实施例相比，所述步骤2中形成的薄膜封装层300包括三层无机钝化层、两层有机缓冲层、及两层类金刚石层，该三层无机钝化层由下至上分别为第一、第二、第三无机钝化层311、312、313，该两层有机缓冲层由下至上分别为第一、第二有机缓冲层321、322，该两层类金刚石层由下至上分别为第一、第二类金刚石层331、332；
从而，在本实施例中，与上述第一实施例相比，在进行步骤24之后，所述步骤2还包括：
步骤25、如图7所示，在所述第二无机钝化层312上形成第二有机缓冲层322，所述第二有机缓冲层322的尺寸小于所述第二无机钝化层312的尺寸，所述第二无机钝化层312对应所述第二有机缓冲层322的外侧边缘和第二无机钝化层312的外侧边缘之间的部分形成第二台阶区；
步骤26、如图8所示，在所述第二台阶区上形成覆盖第二台阶区的第二类金刚石层332；
步骤27、在所述第二有机缓冲层322、及第二类金刚石层332上形成覆盖所述第二有机缓冲层322、及第二类金刚石层332的第三无机钝化层313，从而得到如图2所示的OLED显示器。
综上所述，本发明的OLED显示器，薄膜封装层中每一有机缓冲层下方相邻的无机钝化层对应该有机缓冲层的外侧边缘和该无机钝化层的外侧边缘之间的部分形成台阶区，每一台阶区上设置有覆盖该台阶区的类金刚石层，即本发明将类金刚石应用于侧向封装，薄膜封装层中每一有机缓冲层的外侧均设有一层类金刚石层，从而不但能够有效阻隔外界水氧从侧面对OLED器件的伤害，而且避免了顶发射器件的光经过类金刚石而造成损失的问题，进而避免了类金刚石应用于封装时在阻隔水氧能力与透过率之间的矛盾；本发明的OLED显示器的制作方法，将类金刚石用于侧向封装，在薄膜封装层中有机缓冲层的外侧设置类金刚石层，不但能够有效阻隔外界水氧从侧面对OLED器件的伤害，而且避免了顶发射器件的光经过类金刚石而造成损失的问题，从而能够获得高寿命的OLED器件，而且不会影响OLED器件光的输出。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (13)

  1. 一种OLED显示器，包括基板、设于所述基板上的OLED器件、及设于所述基板、及OLED器件上并覆盖OLED器件的薄膜封装层；
    所述薄膜封装层包括至少两层无机钝化层、至少一层有机缓冲层、及至少一层类金刚石层；所述薄膜封装层中，每一类金刚石层与一层有机缓冲层相对应属于同层，无机钝化层和有机缓冲层交替层叠设置，无机钝化层和类金刚石层交替层叠设置，且无机钝化层比有机缓冲层、及类金刚石层在层数上多一层；
    每一有机缓冲层的尺寸比下方相邻的无机钝化层的尺寸小，从而每一有机缓冲层下方相邻的无机钝化层对应该有机缓冲层的外侧边缘和该无机钝化层的外侧边缘之间的部分形成台阶区，所述类金刚石层设置于对应的台阶区上并覆盖该台阶区。
  2. 如权利要求1所述的OLED显示器，其中，所述无机钝化层的材料为Al2O3、ZrO2、ZnO2、SiNx、SiCN、SiOx、或TiO2，所述无机钝化层的厚度为0.5-1μm；
    所述有机缓冲层的材料为聚丙烯酸酯类聚合物、聚碳酸酯类聚合物、或聚苯乙烯，所述有机缓冲层的厚度为1-10μm；
    所述类金刚石层的厚度为2-10μm。
  3. 如权利要求1所述的OLED显示器，其中，所述薄膜封装层包括2-5层无机钝化层、1-4层有机缓冲层、及1-4层类金刚石层。
  4. 如权利要求3所述的OLED显示器，其中，所述薄膜封装层包括两层无机钝化层、一层有机缓冲层、及一层类金刚石层，该两层无机钝化层由下至上分别为第一、第二无机钝化层，该一层有机缓冲层为第一有机缓冲层，该一层类金刚石层为第一类金刚石层；
    所述第一无机钝化层对应所述第一有机缓冲层的外侧边缘与第一无机钝化层的外侧边缘之间形成的台阶区为第一台阶区，所述第一类金刚石层设置于第一台阶区上并覆盖该第一台阶区。
  5. 如权利要求3所述的OLED显示器，其中，所述薄膜封装层包括三层无机钝化层、两层有机缓冲层、及两层类金刚石层，该三层无机钝化层由下至上分别为第一、第二、第三无机钝化层，该两层有机缓冲层由下至上分别为第一、第二有机缓冲层，该两层类金刚石层由下至上分别为第一、第二类金刚石层；
    所述第一无机钝化层对应所述第一有机缓冲层的外侧边缘与第一无机钝化层的外侧边缘之间形成的台阶区为第一台阶区，所述第一类金刚石层设置于第一台阶区上并覆盖该第一台阶区；所述第二无机钝化层对应所述第二有机缓冲层的外侧边缘与第二无机钝化层的外侧边缘之间形成的台阶区为第二台阶区，所述第二类金刚石层设置于第二台阶区上并覆盖该第二台阶区。
  6. 一种OLED显示器的制作方法，包括如下步骤：
    步骤1、提供基板，在所述基板上形成OLED器件；
    步骤2、在所述基板、及OLED器件上形成覆盖OLED器件的薄膜封装层，得到OLED显示器；
    其中，所述薄膜封装层包括至少两层无机钝化层、至少一层有机缓冲层、及至少一层类金刚石层；所述薄膜封装层中，每一类金刚石层与一层有机缓冲层相对应属于同层，无机钝化层和有机缓冲层交替层叠设置，无机钝化层和类金刚石层交替层叠设置，且无机钝化层比有机缓冲层、及类金刚石层在层数上多一层；
    每一有机缓冲层的尺寸比下方相邻的无机钝化层的尺寸小，从而每一有机缓冲层下方相邻的无机钝化层对应该有机缓冲层的外侧边缘和该无机钝化层的外侧边缘之间的部分形成台阶区，所述类金刚石层设置于对应的台阶区上并覆盖该台阶区。
  7. 如权利要求6所述的OLED显示器的制作方法，其中，所述步骤2中，所述无机钝化层通过等离子体增强化学气相沉积法、原子力沉积法、脉冲激光沉积法、或溅镀沉积法形成，所述无机钝化层的材料为Al2O3、ZrO2、ZnO2、SiNx、SiCN、SiOx、或TiO2，所述无机钝化层的厚度为0.5-1μm；
    所述步骤2中，所述有机缓冲层通过喷墨印刷、等离子体增强化学气相沉积法、丝网印刷、或狭缝涂布形成，所述有机缓冲层的材料为聚丙烯酸酯类聚合物、聚碳酸酯类聚合物、或聚苯乙烯，所述有机缓冲层的厚度为1-10μm；
    所述步骤2中，所述类金刚石层利用掩模板通过沉积形成；所述类金刚石层的厚度为2-10μm。
  8. 如权利要求6所述的OLED显示器的制作方法，其中，所述步骤2中形成的薄膜封装层包括2-5层无机钝化层、1-4层有机缓冲层、及1-4层类金刚石层。
  9. 如权利要求8所述的OLED显示器的制作方法，其中，所述步骤2 中形成的薄膜封装层包括两层无机钝化层、一层有机缓冲层、及一层类金刚石层，该两层无机钝化层由下至上分别为第一、第二无机钝化层，该一层有机缓冲层为第一有机缓冲层，该一层类金刚石层为第一类金刚石层；
    所述步骤2具体包括：
    步骤21、在所述基板、及OLED器件上形成覆盖OLED器件的第一无机钝化层；
    步骤22、在所述第一无机钝化层上形成第一有机缓冲层，所述第一有机缓冲层的尺寸小于所述第一无机钝化层的尺寸，所述第一无机钝化层对应所述第一有机缓冲层的外侧边缘和第一无机钝化层的外侧边缘之间的部分形成第一台阶区；
    步骤23、在所述第一台阶区上形成覆盖第一台阶区的第一类金刚石层；
    步骤24、在所述第一有机缓冲层、及第一类金刚石层上形成覆盖所述第一有机缓冲层、及第一类金刚石层的第二无机钝化层。
  10. 如权利要求8所述的OLED显示器的制作方法，其中，所述薄膜封装层包括三层无机钝化层、两层有机缓冲层、及两层类金刚石层，该三层无机钝化层由下至上分别为第一、第二、第三无机钝化层，该两层有机缓冲层由下至上分别为第一、第二有机缓冲层，该两层类金刚石层由下至上分别为第一、第二类金刚石层；
    所述步骤2具体包括：
    步骤21、在所述基板、及OLED器件上形成覆盖OLED器件的第一无机钝化层；
    步骤22、在所述第一无机钝化层上形成第一有机缓冲层，所述第一有机缓冲层的尺寸小于所述第一无机钝化层的尺寸，所述第一无机钝化层对应所述第一有机缓冲层的外侧边缘和第一无机钝化层的外侧边缘之间的部分形成第一台阶区；
    步骤23、在所述第一台阶区上形成覆盖第一台阶区的第一类金刚石层；
    步骤24、在所述第一有机缓冲层、及第一类金刚石层上形成覆盖所述第一有机缓冲层、及第一类金刚石层的第二无机钝化层；
    步骤25、在所述第二无机钝化层上形成第二有机缓冲层，所述第二有机缓冲层的尺寸小于所述第二无机钝化层的尺寸，所述第二无机钝化层对应所述第二有机缓冲层的外侧边缘和第二无机钝化层的外侧边缘之间的部分形成第二台阶区；
    步骤26、在所述第二台阶区上形成覆盖第二台阶区的第二类金刚石层；
    步骤27、在所述第二有机缓冲层、及第二类金刚石层上形成覆盖所述 第二有机缓冲层、及第二类金刚石层的第三无机钝化层。
  11. 一种OLED显示器，包括基板、设于所述基板上的OLED器件、及设于所述基板、及OLED器件上并覆盖OLED器件的薄膜封装层；
    所述薄膜封装层包括至少两层无机钝化层、至少一层有机缓冲层、及至少一层类金刚石层；所述薄膜封装层中，每一类金刚石层与一层有机缓冲层相对应属于同层，无机钝化层和有机缓冲层交替层叠设置，无机钝化层和类金刚石层交替层叠设置，且无机钝化层比有机缓冲层、及类金刚石层在层数上多一层；
    每一有机缓冲层的尺寸比下方相邻的无机钝化层的尺寸小，从而每一有机缓冲层下方相邻的无机钝化层对应该有机缓冲层的外侧边缘和该无机钝化层的外侧边缘之间的部分形成台阶区，所述类金刚石层设置于对应的台阶区上并覆盖该台阶区；
    其中，所述无机钝化层的材料为Al2O3、ZrO2、ZnO2、SiNx、SiCN、SiOx、或TiO2，所述无机钝化层的厚度为0.5-1μm；
    所述有机缓冲层的材料为聚丙烯酸酯类聚合物、聚碳酸酯类聚合物、或聚苯乙烯，所述有机缓冲层的厚度为1-10μm；
    所述类金刚石层的厚度为2-10μm；
    其中，所述薄膜封装层包括2-5层无机钝化层、1-4层有机缓冲层、及1-4层类金刚石层。
  12. 如权利要求11所述的OLED显示器，其中，所述薄膜封装层包括两层无机钝化层、一层有机缓冲层、及一层类金刚石层，该两层无机钝化层由下至上分别为第一、第二无机钝化层，该一层有机缓冲层为第一有机缓冲层，该一层类金刚石层为第一类金刚石层；
    所述第一无机钝化层对应所述第一有机缓冲层的外侧边缘与第一无机钝化层的外侧边缘之间形成的台阶区为第一台阶区，所述第一类金刚石层设置于第一台阶区上并覆盖该第一台阶区。
  13. 如权利要求11所述的OLED显示器，其中，所述薄膜封装层包括三层无机钝化层、两层有机缓冲层、及两层类金刚石层，该三层无机钝化层由下至上分别为第一、第二、第三无机钝化层，该两层有机缓冲层由下至上分别为第一、第二有机缓冲层，该两层类金刚石层由下至上分别为第一、第二类金刚石层；
    所述第一无机钝化层对应所述第一有机缓冲层的外侧边缘与第一无机钝化层的外侧边缘之间形成的台阶区为第一台阶区，所述第一类金刚石层设置于第一台阶区上并覆盖该第一台阶区；所述第二无机钝化层对应所述 第二有机缓冲层的外侧边缘与第二无机钝化层的外侧边缘之间形成的台阶区为第二台阶区，所述第二类金刚石层设置于第二台阶区上并覆盖该第二台阶区。
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