WO2018036161A1 - 一种用于光栅耦合的激光器结构及封装方法 - Google Patents

一种用于光栅耦合的激光器结构及封装方法 Download PDF

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WO2018036161A1
WO2018036161A1 PCT/CN2017/078721 CN2017078721W WO2018036161A1 WO 2018036161 A1 WO2018036161 A1 WO 2018036161A1 CN 2017078721 W CN2017078721 W CN 2017078721W WO 2018036161 A1 WO2018036161 A1 WO 2018036161A1
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substrate
laser
chip
laser chip
optical waveguide
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PCT/CN2017/078721
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English (en)
French (fr)
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宋琼辉
杜巍
马洪勇
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武汉光迅科技股份有限公司
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Publication of WO2018036161A1 publication Critical patent/WO2018036161A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/34—Optical coupling means utilising prism or grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4296—Coupling light guides with opto-electronic elements coupling with sources of high radiant energy, e.g. high power lasers, high temperature light sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers

Definitions

  • the present invention relates to a laser component for optical fiber communication, and more particularly to a laser structure and a packaging method for grating coupling, and more particularly to a method for coupling a laser light source to a grating coupler in a silicon photonic device, and the present invention belongs to the field of communications.
  • Silicon photonic materials due to their high integration, high frequency characteristics, low power consumption, and compatibility with existing large-scale integrated circuit processes, have become a hot research topic in the world.
  • Various silicon photonic devices such as high-speed electro-optic modulators and photodetectors And integrated chips have emerged and matured.
  • the silicon material is an indirect semiconductor material, the material itself is difficult to be fabricated into a laser component. Therefore, an external III-IV laser is generally used as a light source, and the input of the light source is realized by epitaxial growth or coupling alignment.
  • the method of epitaxially growing a III-IV laser on a silicon-based material is highly demanding and difficult to implement. Only a few manufacturers in the world have relevant reports, and no fully mature products are sold in the market. Therefore, most manufacturers use a complete laser chip and silicon photonic chip coupling to achieve the coupling of the laser source.
  • the grating coupler is one of the main light source input methods of the silicon optical chip because it is relatively easy to implement in the process.
  • Luxtera is involved in the US patent application publication US201414324544A1
  • the entire laser light source part is composed of a plurality of discrete parts such as a laser chip, a lens, an isolator, a mirror, and the like. The number of components and the complicated structure make the production efficiency of the assembly process difficult to improve.
  • the technical problem to be solved by the present invention is to provide a laser structure with simple structure and a coupling alignment method thereof, and to provide a fast coupling alignment method of the grating coupler of the laser and the silicon photonic integrated chip.
  • a laser element comprising a substrate having an active region for generating and outputting laser light and an electrode for supplying power to the laser chip, the substrate having one end open at least partially accommodating the laser chip Etching the groove, the other end of the substrate is provided with a light-emitting surface, the substrate is further provided with an optical waveguide extending between the etching groove and the light-emitting surface; the laser chip is placed on the substrate In the etched trench, an active region of the laser chip is aligned with an optical waveguide on the substrate.
  • the surface of the laser chip includes an alignment mark on which an alignment mark is disposed, an alignment mark on the laser chip, and an alignment mark on the substrate for determining the laser chip and the The relative positions between the substrates are to facilitate alignment of the two.
  • a height positioning block is disposed in the etched groove of the substrate, a vertical height difference of the height positioning block from the center of the optical waveguide and a vertical height of a surface of the laser chip from a center of the active area of the laser chip The difference is consistent so that the active area of the laser chip is aligned with the center of the optical waveguide after the laser chip is placed in place in the etched trench of the substrate.
  • the light-emitting surface of the substrate is a reflective surface, and the reflective surface is at an angle of 30 to 50 degrees with the surface of the substrate to change the light-emitting direction of the optical waveguide in a total reflection manner.
  • the substrate is further provided with an electrode, and the electrode on the substrate is electrically connected to an electrode that supplies power to the laser chip.
  • a method of coupling a laser chip and a substrate of the laser element comprising the steps of: Aligning marks are respectively disposed on the surface of the laser chip and the substrate, and determining that when the active area of the laser chip is aligned with the optical waveguide of the substrate, the alignment mark on the surface of the laser chip and the substrate Aligning the relative positional relationship of the marks as a predetermined relative positional relationship; respectively identifying an alignment mark of the surface of the laser chip and an alignment mark on the substrate in an image recognition manner, thereby accurately determining the laser chip and the substrate a relative position, precisely adjusting a position of the laser chip such that an alignment mark of the laser chip and an alignment mark on the substrate satisfy a predetermined mutual positional relationship, thereby locating the laser chip in a horizontal direction of the substrate
  • the optical waveguide on the substrate is aligned; the surface of the laser chip is completely in contact with the height positioning block on the substrate by pressure control of the laser chip, so that the laser chip is vertically oriented
  • the optical waveguides of the substrate
  • a high precision flip chip bonding apparatus is used to image identify the alignment marks on the surface of the laser chip and the substrate, precisely adjust the position of the laser chip, and pressure control the laser chip.
  • a laser assembly comprising: a silicon photonic integrated chip and a laser element according to claims 1-5, an electrode on a substrate of the laser element electrically connecting an electrode on the silicon photonic integrated chip and the laser element An electrode of the laser chip, the local area where the reflective surface optical waveguide of the substrate is located is aligned with the grating coupler on the silicon photonic integrated chip.
  • An alignment accuracy error of the reflective region of the optical waveguide and the grating coupler is less than or equal to 5 micrometers, and a pair between an electrode on the substrate and an electrode on the silicon photonic integrated chip and an electrode of the laser chip The quasi-error is less than or equal to 20 microns.
  • a method for fabricating a laser assembly comprising the steps of: aligning an electrode on a substrate of the laser element with an electrode on the silicon photonic integrated chip; and causing a reflective surface of the substrate of the laser element to be optically waveguided
  • the local area is aligned with the grating coupler on the silicon photonic integrated chip;
  • An electro-glue realizes electrical connection between an electrode on a substrate of the laser element and an electrode on the silicon photonic integrated chip; a local area where the reflective surface of the substrate of the laser element is located and the silicon photonic integrated chip
  • a matching glue is placed between the grating couplers.
  • the laser as a whole comprises only the substrate and the laser chip integrated with the optical waveguide and the electrode, and has no other discrete components, and has simple structure design and low cost.
  • the high-precision flip-chip bonding alignment process is used to realize the coupling of the laser optical path; the coupling of the laser and the silicon photonic integrated chip grating coupler can be realized by the conventional patch technology.
  • the entire packaging process is passive alignment technology, high coupling efficiency, suitable for high efficiency and mass production.
  • FIG. 1 is a schematic structural view of a laser provided by the present invention.
  • FIG. 2 is a schematic cross-sectional view showing the structure of a laser provided by the present invention.
  • FIG. 3 is a schematic structural view of a substrate of a laser provided by the present invention.
  • FIG. 4 is a schematic diagram of a coupling structure of a laser and a silicon photonic integrated chip provided by the present invention
  • FIG. 5 is a schematic cross-sectional view showing a coupling of a laser and a silicon photonic integrated chip provided by the present invention
  • FIG. 6 is a schematic structural view of a silicon photonic integrated chip provided by the present invention.
  • Figure 7 is a schematic view showing the optical path of the laser provided by the present invention.
  • substrate 2 laser chip
  • Electrode 14 etching groove
  • FIG. 1-3 The structure of the laser provided by the present invention is as shown in FIG. 1-3, which includes two parts of the substrate 1 and the laser chip 2; wherein the substrate 1 includes the optical waveguide 11, the electrode 12 and the electrode 13, the etching groove 14, and the alignment The mark 15, the height positioning block 16 (not shown in FIG.
  • the coupling surface 17, and the reflecting surface 18, one end of the substrate 1 is provided with an etching groove 14 at least partially accommodating the laser chip 2, and the other end of the substrate 1 is provided with a reflection
  • the surface 18 ie, the light-emitting surface
  • the reflecting surface 18 is used to change the light-emitting direction of the optical waveguide 11 in a total reflection manner;
  • the laser chip 2 has a laser beam generated and outputted.
  • the active region 21 and the electrodes (anode and cathode) that power the laser chip 2, the surface of the laser chip 2 contains alignment marks.
  • the laser chip 2 is placed in an etched trench 14 of the substrate 1 with the active region 21 of the laser chip aligned with the optical waveguide 11 on the substrate.
  • the structural cross section of the laser provided by the invention is as shown in FIG. 2.
  • the alignment mark is designed in the etching groove 14 on the substrate 1.
  • 15 and a height positioning block 16 wherein the vertical height difference of the height positioning block 16 from the center of the optical waveguide 11 coincides with the vertical height difference of the surface of the laser chip 2 from the center of the active area 21 of the laser chip 2, so that the laser chip 2 is on the substrate 1
  • the laser chip 2 is active
  • the region 21 is aligned with the center of the optical waveguide 11.
  • the alignment mark 15 may be disposed on the substrate 1 at any position that facilitates determining the relative positional relationship between the substrate 1 and the laser chip 2.
  • the present invention also provides a method of aligning the laser chip 2 with the rapid coupling of the optical waveguide 11 of the substrate 1.
  • the alignment of the laser chip 2 can be separately identified by automatic or manual image recognition.
  • the alignment marks 15 on the substrate 1 satisfy a predetermined mutual positional relationship, thereby aligning the laser chip 2 with the optical waveguide 11 on the substrate 1 in the horizontal direction of the substrate 1;
  • the pressure supplied to the laser chip 2 by the flip-chip bonding apparatus Control is such that the surface of the laser chip 2 is in full contact with the height positioning block 16 on the substrate 1, so that the laser chip 2 is accurately aligned with the optical waveguide 11 of the substrate 1 in the vertical direction, as shown in FIG.
  • the precision alignment requires that the alignment precision error of the
  • the left end of the electrode 13 on the substrate 1 is located on the bottom surface of the etching groove 14 and is in contact with the electrode of the upper surface of the laser chip 2 (ie, the surface falling into the etching groove 14 and facing the substrate 1).
  • Gold-tin solder 5 is required to be plated, as shown in Figure 3.
  • the gold-tin solder is heated and melted, and the electrodes 13 on the substrate 1 and the electrodes on the upper surface of the laser chip 2 are electrically connected to each other to achieve electrical connection, as shown in FIG.
  • the electrodes on the back side of the laser chip 2 can be electrically connected by means of gold wire bonding, that is, the back electrode of the laser chip 2 and the electrode 12 of the substrate 1 are realized by the gold wire bonding wire 3. Electrical connection, as shown in Figure 1.
  • the electrodes 12, 13 on the substrate 1 are located on the bottom surface of the etching groove 14, respectively, and the cathode and the anode of the laser chip 2 are connected by gold tin solder 5.
  • the coupling surface 17 of the optical waveguide 11 on the substrate 1 on the side wall of the etching groove 14 is designed to be at an angle of 6 to 10 degrees with the laser emitting end surface of the active region 21 of the laser chip 2, and the purpose thereof is to reduce the laser.
  • the reflection of light between the chip 2 and the coupling end face 17 of the optical waveguide 11 reduces the effect of the reflected light on the power and mode stability of the laser chip 2.
  • the right end (exit end face) of the substrate 1 is polished to an angle of 30 to 50 degrees with respect to the surface of the substrate 1 (ie, the horizontal plane) to form a reflecting surface for emitting light, the purpose of which is to transmit the laser light through the optical waveguide 11 to the right end of the substrate 1. After the (ejecting end face), total reflection occurs, and is output in a direction perpendicular to the surface of the substrate 1 (i.e., perpendicular to the horizontal plane).
  • the relative positions of the electrodes 12, 13 and the waveguide reflection regions on the substrate 1 coincide with the relative positions of the electrodes 42, 43 and the grating coupler 41 on the silicon photonic integrated chip 4.
  • Figure 4-5 shows the coupling structure of the laser and silicon photonic integrated chip.
  • the other portion of the laser substrate 1 is bonded to the upper surface of the silicon photonic integrated chip 4 except for the left end region where the laser chip 2 is located.
  • the upper surface of the silicon photonic integrated chip 4 is designed with a grating coupler 41 and electrodes 42, 43 as shown in FIG.
  • the right end portion of the electrode 13 on the laser substrate 1 is aligned with the upper electrode 43 of the silicon photonic integrated chip 4, and the right end portion of the electrode 12 on the laser substrate 1 is aligned with the upper electrode 42 of the silicon photonic integrated chip 4, the laser substrate
  • the local area where the reflective surface waveguide is located is aligned with the grating coupler 41 on the silicon photonic integrated chip 4.
  • Electrical connection is made between the electrodes 12, 13 on the laser substrate 1 and the silicon photonic integrated chip 4 electrodes 42, 43 using a conductive paste 6, and the matching adhesive 7 is used between the laser substrate 1 and the grating coupler 41 on the silicon photonic integrated chip 4. Reflection of the grating surface.
  • the alignment precision of the reflection region of the optical waveguide 11 and the grating coupler 7 is required to be 5 ⁇ m or less, and the alignment error between the electrodes is 20 ⁇ m or less.
  • the conductive adhesive 6 and the matching adhesive 7 are all heat-curing adhesives, and the curing temperature is 150-200 degrees, which is lower than the soldering temperature of the gold-tin solder 250-350 degrees, and does not affect the reliability of the laser chip bonding. It does not affect the performance of other regions on the silicon photonic integrated chip 4.
  • the electrodes 42 and 43 of the silicon photonic integrated chip 4 are operated.
  • the output driving current is loaded to the cathode and the anode of the laser chip 2 through the conductive paste 6 and the electrodes 12, 13 on the laser substrate 1, so that the laser chip 2 operates to emit light, and the light emitted from the active region 21 of the laser chip 2 enters the substrate 1.
  • the optical waveguide 11 is transmitted to the right end reflection surface 18 of the substrate 1 and then reflected and outputted from the lower surface of the substrate 1, and finally enters the grating coupler 41 on the silicon photonic integrated chip 4 through the matching glue 7, thereby realizing the light from the laser.
  • the chip 2 outputs the entire process to the input of the silicon photonic integrated chip 4, as shown in FIG.

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  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
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Abstract

一种激光器元件，包括基板（1）和激光器芯片（2），激光器芯片具有产生并输出激光的有源区（21）以及为激光器芯片供电的电极，基板的一端开设有至少部分容纳激光器芯片的刻蚀槽（14），基板的另一端设置有出光面（18），基板还设置有在刻蚀槽和出光面之间延伸的光波导（11）；激光器芯片被放置在基板的刻蚀槽中，激光器芯片的有源区与基板上的光波导对准。激光器元件只包含集成光波导和电极的基板和激光器芯片两个部分，无其它分立元件，结构设计简单，成本低廉；并且可采用倒装焊对准工艺，实现激光器光路的耦合和激光器与硅光子集成芯片的光栅耦合器的耦合，采用无源对准技术，耦合效率高，适合高效率大批量生产。

Description

一种用于光栅耦合的激光器结构及封装方法 技术领域
本发明涉及一种用于光纤通信的激光器元件，尤其涉及用于光栅耦合的激光器结构及封装方法，具体涉及实现激光器光源与硅光子器件中光栅耦合器耦合的方法，本发明属于通信领域。
背景技术
硅光子材料，由于其集成度高、高频特性好、功耗低、与现有大规模集成电路工艺兼容，成为目前国际上的研究热点，各种硅光子器件如高速电光调制器、光电探测器、以及集成芯片均已出现并逐步成熟。
由于硅材料属于间接半导体材料，材料本身难以制作成激光器元件，因此，一般采用外置的Ⅲ-Ⅳ族激光器来做光源，通过外延生长或耦合对准的方式实现光源的输入。在硅基材料上外延生长Ⅲ-Ⅳ族激光器的方式对工艺要求很高，实现难度很大，国际上只有极少数厂家有相关的报道，并无完全成熟的产品在市场销售。因此绝大部分厂家都采用的是完整的激光器芯片与硅光子芯片耦合对准的方式实现激光器光源的耦合。
用以硅光子器件与光源耦合对准的结构主要有两种，一种是端面耦合结构，一种是光栅耦合器结构。光栅耦合器由于工艺上比较容易实现，是一种主要的硅光芯片的光源输入方式之一。针对这种光栅耦合器的光源输入，Luxtera在美国专利申请公开文件US201414324544A1中有所涉及，整个激光器光源部分采用的是激光器芯片、透镜、隔离器、反射镜等多个分立部分组成，涉及的零部件多，结构复杂，使得组装工艺的生产效率难以提高。
发明内容
本发明所要解决的技术问题是，提供一种结构简单的激光器结构及其耦合对准方法，并提供这种激光器与硅光子集成芯片的光栅耦合器的快速耦合对准方法。
本发明所采用的技术方案是：
一种激光器元件，其包括基板和激光器芯片，所述激光器芯片具有产生并输出激光的有源区以及为所述激光器芯片供电的电极，所述基板的一端开设有至少部分容纳所述激光器芯片的刻蚀槽，所述基板的另一端设置有出光面，所述基板还设置有在所述刻蚀槽和所述出光面之间延伸的光波导；所述激光器芯片被放置在所述基板的刻蚀槽中，所述激光器芯片的有源区与所述基板上的光波导对准。
所述激光器芯片的表面包含有对准标记，所述基板上设置有对准标记，所述激光器芯片上的对准标记和所述基板上的对准标记用于确定所述激光器芯片和所述基板之间的相对位置以方便两者对准。
所述基板的刻蚀槽内设置有高度定位块，所述高度定位块距离所述光波导中心的垂直高度差与所述激光器芯片的表面距离所述激光器芯片的有源区的中心的垂直高度差一致，以便于所述激光器芯片在所述基板的刻蚀槽中被放置到位后，所述激光器芯片的有源区与所述光波导的中心相对准。
所述基板的出光面为反光面，所述反光面与所述基板表面成30～50度角，从而以全反射方式改变所述光波导的出光方向。
所述基板还设置有电极，所述基板上的电极与为所述激光器芯片供电的电极相电连接。
所述激光器元件的激光器芯片和基板耦合对准的方法，包括步骤：在所述 激光器芯片表面和所述基板上分别设置对准标记，并确定当所述激光器芯片的有源区与所述基板的光波导相对准时，所述激光器芯片表面的对准标记与所述基板上的对准标记的相对位置关系作为预定相对位置关系；以图像识别方式分别识别所述激光器芯片表面的对准标记和所述基板上的对准标记，从而精确确定所述激光器芯片和所述基板的相对位置，精确调整所述激光器芯片的位置使所述激光器芯片的对准标记和所述基板上的对准标记满足预定相互位置关系，从而将所述激光器芯片在所述基板的水平方向上与所述基板上的光波导对准；通过给所述激光器芯片进行压力控制使所述激光器芯片的表面与所述基板上的高度定位块完全接触，从而使所述激光器芯片在垂直方向上与所述基板的光波导准确对准。
使用高精度的倒装焊设备来图像识别所述激光器芯片表面和所述基板上的对准标记、精确调整所述激光器芯片的位置以及给所述激光器芯片进行压力控制。
一种激光器组件，包括：硅光子集成芯片和如权利要求1-5所述的激光器元件，所述激光器元件的基板上的电极电连接所述硅光子集成芯片上的电极和所述激光器元件的激光器芯片的电极，所述基板的反射面光波导所在的局域与所述硅光子集成芯片上的光栅耦合器对准。
所述光波导的反射区与所述光栅耦合器的对准精度误差小于等于5微米，所述基板上的电极与所述硅光子集成芯片上的电极和所述激光器芯片的电极之间的对准误差小于等于20微米。
一种用于制造激光器组件的方法，包括步骤：使所述激光器元件的基板上的电极与所述硅光子集成芯片上的电极相对准；使所述激光器元件的基板的反射面光波导所在的局域与所述硅光子集成芯片上的光栅耦合器相对准；使用导 电胶实现所述激光器元件的基板上的电极与所述硅光子集成芯片上的电极的电气连接；在所述激光器元件的基板的反射面光波导所在的局域与所述硅光子集成芯片上的光栅耦合器之间设置匹配胶。
本发明的优点在于：
1.激光器整体只包含集成光波导和电极的基板、激光器芯片两个部分，无其它分立元件，结构设计简单，成本低廉。
2.封装过程中，采用高精度倒装焊对准工艺，实现激光器光路的耦合；采用常规贴片技术即可实现激光器与硅光子集成芯片的光栅耦合器的耦合。整个封装过程全部为无源对准技术，耦合效率高，适合高效率大批量生产。
附图说明
图1本发明所提供的激光器的结构示意图；
图2本发明所提供的激光器的结构截面示意图；
图3本发明所提供的激光器的基板结构示意图；
图4本发明所提供的激光器与硅光子集成芯片耦合结构示意图；
图5本发明所提供的激光器与硅光子集成芯片耦合截面示意图；
图6本发明所提供的硅光子集成芯片结构示意图；
图7本发明所提供的激光器的光路示意图；
图中标记：
1：基板                       2：激光器芯片
3：金丝键合导线               4：硅光子集成芯片
5：金锡焊料                   6：导电胶
7：匹配胶                     11：光波导
12，13：电极                   14：刻蚀槽
15：对准标记                   16：高度定位块
17：耦合面                     18：反射面
21：激光器芯片有源区           41：光栅耦合器
42，43：硅光子芯片上电极
具体实施方式
为了便于本领域普通技术人员理解和实施本发明，下面结合附图及具体实施方式对本发明作进一步的详细描述。
本发明所提供的激光器的结构如图1-3所示，其包括基板1和激光器芯片2两个部分；其中，基板1包括光波导11、电极12和电极13、刻蚀槽14、对准标记15、高度定位块16(图1中未示出)、耦合面17、反射面18，基板1的一端开设有至少部分容纳激光器芯片2的刻蚀槽14，基板1的另一端设置有反射面18(即出光面)，光波导11在刻蚀槽14和反射面18之间延伸，反射面18用于以全反射方式改变光波导11的出光方向；激光器芯片2具有产生并输出激光的有源区21和为激光器芯片2供电的电极(阳极和阴极)，激光器芯片2表面包含有对准标记。激光器芯片2被放置在基板1的刻蚀槽14中，激光器芯片的有源区21与基板上的光波导11对准。
发明所提供的激光器的结构截面如图2所示，为实现激光器芯片2的有源区和基板1上的光波导11的精密对准，基板1上的刻蚀槽14内设计有对准标记15和高度定位块16，其中高度定位块16距离光波导11中心的垂直高度差与激光器芯片2表面距离激光器芯片2的有源区21中心的垂直高度差一致，以便于激光器芯片2在基板1的刻蚀槽14中被放置到位后，激光器芯片2的有源 区21与光波导11的中心相对准。对准标记15可以设置于基板1上的方便确定基板1与激光器芯片2相对位置关系的任意位置上。
本发明还提供一种将激光器芯片2与基板1光波导11的快速耦合对准的方法，通过利用高精度的倒装焊设备，能够以自动或人工图像识别方式分别识别激光器芯片2的对准标记和基板1上的对准标记15，从而精确确定激光器芯片2和基板1的相对位置关系，通过高精度的倒装焊设备精确调整激光器芯片2的位置，使激光器芯片2的对准标记和基板1上的对准标记15满足预定的相互位置关系，从而将激光器芯片2在基板1的水平方向上与基板1上的光波导11对准；通过倒装焊设备提供给激光器芯片2的压力控制，使激光器芯片2的表面与基板1上的高度定位块16完全接触，从而使激光器芯片2在垂直方向上与基板1的光波导11准确对准，如图2所示。此处精密对准要求激光器芯片2与光波导11的对准精度误差小于等于1微米。
所述的基板1上的电极13左端位于刻蚀槽14的底面并与激光器芯片2的上表面(即落入刻蚀槽14内并朝向基板1的一面)的电极相接触，该接触部分上要求镀有金锡焊料5，如图3所示。在倒装焊过程中，金锡焊料被加热融化，使基板1上的电极13和激光器芯片2的上表面的电极导通，实现电气连接，如图2所示。激光器芯片2背面(即下表面，背对基板1的一面)电极可通过金丝键合的方式实现电气连接，即通过金丝键合导线3实现激光器芯片2背面电极和基板1的电极12的电气连接，如图1所示。当激光器芯片2的阴极和阳极都在激光器芯片2的上表面时，则基板1上的电极12、13均位于刻蚀槽14的底面分别采用金锡焊料5连接激光器芯片2的阴极和阳极。
所述的基板1上光波导11位于刻蚀槽14侧壁的耦合面17设计为与激光器芯片2的有源区21的激光出射端面成6至10度角，其目的是为了减少激光器 芯片2与光波导11的耦合端面17之间光的反射，从而减小反射光对激光器芯片2的功率和模式稳定性的影响。
所述基板1的右端(出射端面)被抛光为与基板1表面(即水平面)成30～50度角，以形成出射光的反射面，其目的是使激光通过光波导11传输到基板1右端(出射端面)后发生全反射，以垂直于基板1表面(即垂直于水平面)的方向输出。
所述的基板1上的电极12、13和波导反射区域的相对位置与硅光子集成芯片4上电极42、43和光栅耦合器41的相对位置一致。
图4-5为激光器与硅光子集成芯片耦合结构示意图。除激光器芯片2所在的左端区域外，激光器基板1其它部分被粘接在硅光子集成芯片4的上表面。硅光子集成芯片4上表面设计有光栅耦合器41和电极42、43，如图6所示。
通过贴片技术，使激光器基板1上的电极13右端部分与硅光子集成芯片4上电极43对准，激光器基板1上的电极12右端部分与硅光子集成芯片4上电极42对准，激光器基板1反射面波导所在的局域与硅光子集成芯片4上的光栅耦合器41对准。激光器基板1上的电极12、13和硅光子集成芯片4电极42、43之间使用导电胶6实现电气连接，激光器基板1与硅光子集成芯片4上光栅耦合器41之间使用匹配胶7降低光栅表面的反射。如图5所示，此处对准要求光波导11反射区与光栅耦合器7的对准精度误差小于等于5微米，电极间对准误差小于等于20微米。
所述的导电胶6和匹配胶7均为热固化胶，固化温度为150～200度，低于金锡焊料250～350度的焊接温度，不会对激光器芯片粘接可靠性造成影响，也不会对硅光子集成芯片4上的其它区域性能产生影响。
通过上述方式构成的激光器模块工作时，硅光子集成芯片4上电极42、43 输出的驱动电流通过导电胶6和激光器基板1上的电极12、13加载到激光器芯片2的阴极和阳极，使激光器芯片2工作发光，从激光器芯片2有源区21发出的光进入到基板1的光波导11中，传输到基板1右端反射面18后被反射从基板1的下表面输出，经过匹配胶7最终进入硅光子集成芯片4上的光栅耦合器41中，从而实现了光从激光器芯片2输出到硅光子集成芯片4输入的整个过程，如图7所示。
虽然本发明已经详细示例并描述了相关的特定实施例做参考，但对本领域的技术人员来说，在阅读和理解了该说明书和附图后，在不背离本发明的思想和范围上，可以对激光器结构及封装方法的制作细节上作出各种改变。这些改变都将落入本发明的权利要求所要求的保护范围。

Claims (10)

  1. 一种激光器元件，其包括基板和激光器芯片，所述激光器芯片具有产生并输出激光的有源区以及为所述激光器芯片供电的电极，其特征在于：所述基板的一端开设有至少部分容纳所述激光器芯片的刻蚀槽，所述基板的另一端设置有出光面，所述基板还设置有在所述刻蚀槽和所述出光面之间延伸的光波导；所述激光器芯片被放置在所述基板的刻蚀槽中，所述激光器芯片的有源区与所述基板上的光波导对准。
  2. 如权利要求1所述的一种激光器元件，其特征在于：所述激光器芯片的表面包含有对准标记，所述基板上设置有对准标记，所述激光器芯片上的对准标记和所述基板上的对准标记用于确定所述激光器芯片和所述基板之间的相对位置以方便两者对准。
  3. 如权利要求1-2中任一项所述的一种激光器元件，其特征在于：所述基板的刻蚀槽内设置有高度定位块，所述高度定位块距离所述光波导中心的垂直高度差与所述激光器芯片的表面距离所述激光器芯片的有源区的中心的垂直高度差一致，以便于所述激光器芯片在所述基板的刻蚀槽中被放置到位后，所述激光器芯片的有源区与所述光波导的中心相对准。
  4. 如权利要求1-3中任一项所述的一种激光器元件，其特征在于：所述基板的出光面为反光面，所述反光面与所述基板表面成30～50度角，从而以全反射方式改变所述光波导的出光方向。
  5. 如权利要求1-4中任一项所述的一种激光器元件，其特征在于：所述基板还设置有电极，所述基板上的电极与为所述激光器芯片供电的电极相电连接。
  6. 一种用于使权利要求3-5所述激光器元件的激光器芯片和基板耦合对准的方法，其特征在于包括步骤：
    c在所述激光器芯片表面和所述基板上分别设置对准标记，并确定当所述激光器芯片的有源区与所述基板的光波导相对准时，所述激光器芯片表面的对准标记与所述基板上的对准标记的相对位置关系作为预定相对位置关系；
    以图像识别方式分别识别所述激光器芯片表面的对准标记和所述基板上的对准标记，从而精确确定所述激光器芯片和所述基板的相对位置，精确调整所述激光器芯片的位置使所述激光器芯片的对准标记和所述基板上的对准标记满足预定相互位置关系，从而将所述激光器芯片在所述基板的水平方向上与所述基板上的光波导对准；
    通过给所述激光器芯片进行压力控制使所述激光器芯片的表面与所述基板上的高度定位块完全接触，从而使所述激光器芯片在垂直方向上与所述基板的光波导准确对准。
  7. 如权利要求6所述的方法，其特征在于：使用高精度的倒装焊设备来图像识别所述激光器芯片表面和所述基板上的对准标记、精确调整所述激光器芯片的位置以及给所述激光器芯片进行压力控制。
  8. 一种激光器组件，其特征在于包括：硅光子集成芯片和如权利要求1-5所述的激光器元件，所述激光器元件的基板上的电极电连接所述硅光子集成芯片上的电极和所述激光器元件的激光器芯片的电极，所述基板的反射面光波导所在的局域与所述硅光子集成芯片上的光栅耦合器对准。
  9. 如权利要求8所述的一种激光器组件，其特征在于包括：所述光波导的反射区与所述光栅耦合器的对准精度误差小于等于5微米，所述基板上的电极与所述硅光子集成芯片上的电极和所述激光器芯片的电极之间的对准误差小于等于20微米。
  10. 一种用于制造如权利要求8或9所述的激光器组件的方法，其特征在 于包括步骤：
    使所述激光器元件的基板上的电极与所述硅光子集成芯片上的电极相对准；
    使所述激光器元件的基板的反射面光波导所在的局域与所述硅光子集成芯片上的光栅耦合器相对准；
    使用导电胶实现所述激光器元件的基板上的电极与所述硅光子集成芯片上的电极的电气连接；
    在所述激光器元件的基板的反射面光波导所在的局域与所述硅光子集成芯片上的光栅耦合器之间设置匹配胶。
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