WO2017208856A1 - Dispositif de filtre à ondes acoustiques - Google Patents

Dispositif de filtre à ondes acoustiques Download PDF

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Publication number
WO2017208856A1
WO2017208856A1 PCT/JP2017/018834 JP2017018834W WO2017208856A1 WO 2017208856 A1 WO2017208856 A1 WO 2017208856A1 JP 2017018834 W JP2017018834 W JP 2017018834W WO 2017208856 A1 WO2017208856 A1 WO 2017208856A1
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WO
WIPO (PCT)
Prior art keywords
wave filter
acoustic wave
inductor
filter device
elastic wave
Prior art date
Application number
PCT/JP2017/018834
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English (en)
Japanese (ja)
Inventor
一郎 松田
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株式会社村田製作所
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Filing date
Publication date
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Publication of WO2017208856A1 publication Critical patent/WO2017208856A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves

Definitions

  • the present invention relates to an elastic wave filter device having first and second filters having different passbands.
  • Patent Document 1 discloses a duplexer used in a mobile phone or the like.
  • each of the transmission filter and the reception filter includes an elastic wave filter.
  • the pass band of the reception filter is higher than the pass band of the transmission filter.
  • This reception filter has a circuit in which a longitudinally coupled resonator type acoustic wave filter and a ladder type filter are connected.
  • An object of the present invention is to provide an elastic wave filter device with improved isolation characteristics.
  • An elastic wave filter device has a first passband, and includes a longitudinally coupled resonator type elastic wave filter and at least one of a series arm resonator and a parallel arm resonator.
  • a second filter having a second passband located on a lower frequency side than the first passband of the first filter, one end of the first filter, and the second One end of the filter is commonly connected, and is provided between the ground terminal connected to the ground potential, the portion connected to the ground potential of the longitudinally coupled resonator type acoustic wave filter, and the ground terminal.
  • an inductor is used to the ground terminal.
  • the first filter includes the longitudinally coupled resonator type elastic wave filter, and a ladder type filter having the series arm resonator and the parallel arm resonator. Including.
  • the first and second filters are configured as one elastic wave filter chip.
  • the acoustic wave filter device can be downsized.
  • the inductor is provided in the elastic wave filter chip.
  • the inductor can be formed with high accuracy by a thin film forming method or the like. Accordingly, variation in characteristics can be reduced.
  • the acoustic wave filter chip has a piezoelectric substrate, and the inductor is provided on the piezoelectric substrate.
  • the inductor can be formed with high accuracy by a thin film formation method or the like, and the variation in characteristics can be effectively reduced.
  • the acoustic wave filter device further includes a package substrate on which the acoustic wave filter chip is mounted, and the ground terminal and the inductor are provided on the package substrate.
  • a package substrate on which the acoustic wave filter chip is mounted, and the ground terminal and the inductor are provided on the package substrate.
  • an inductor having a desired inductance value can be easily formed in the package substrate.
  • the parallel arm resonator is connected to a side opposite to the commonly connected one end side of the longitudinally coupled resonator type acoustic wave filter.
  • the inductor is connected between the end of the parallel arm resonator on the ground potential side and the portion connected to the ground potential of the longitudinally coupled resonator type acoustic wave filter. In this case, the number of terminals connected to the ground potential can be reduced.
  • the elastic wave filter device of the present invention it is possible to improve the isolation characteristics in the second pass band.
  • FIG. 1 is a circuit diagram of an elastic wave filter device according to a first embodiment of the present invention.
  • FIG. 2 is a front sectional view of the acoustic wave filter device according to the first embodiment of the present invention.
  • FIG. 3 is a plan view schematically showing the electrode structure on the lower surface of the piezoelectric substrate used in the first embodiment of the present invention.
  • FIG. 4 is a schematic plan view for explaining the package substrate of the acoustic wave filter device according to the first embodiment of the present invention.
  • FIG. 5 is a schematic plan view showing an electrode structure on the lower surface of the package substrate used in the acoustic wave filter device according to the first embodiment of the present invention.
  • FIG. 1 is a circuit diagram of an elastic wave filter device according to a first embodiment of the present invention.
  • FIG. 2 is a front sectional view of the acoustic wave filter device according to the first embodiment of the present invention.
  • FIG. 3 is a plan view schematically showing the electrode structure on the lower surface of
  • FIG. 6 is a diagram showing the isolation characteristics of the elastic wave filter device of the first embodiment of the present invention and the elastic wave filter device of the first comparative example.
  • FIG. 7 is a circuit diagram of an acoustic wave filter device according to the second embodiment of the present invention.
  • FIG. 8 is a schematic plan view for explaining the electrode structure on the piezoelectric substrate used in the elastic wave filter device according to the second embodiment of the present invention.
  • FIG. 9 is a schematic plan view for explaining a package substrate used in the acoustic wave filter device according to the second embodiment of the present invention.
  • FIG. 10 is a schematic plan view for explaining the electrode structure on the lower surface of the package substrate used in the acoustic wave filter device according to the second embodiment of the present invention.
  • FIG. 11 is a diagram showing the isolation characteristics of the elastic wave filter device of the second embodiment of the present invention and the elastic wave filter device of the second comparative example.
  • FIG. 12 is a circuit diagram of an acoustic wave filter device according to the third embodiment of the present invention.
  • FIG. 13 is a schematic plan view showing an electrode structure on a piezoelectric substrate used in the third embodiment of the present invention.
  • FIG. 14 is a diagram illustrating the isolation characteristics of the elastic wave filter devices of the second embodiment, the third embodiment, and the second comparative example of the present invention.
  • FIG. 15 is a circuit diagram of an acoustic wave filter device according to a fourth embodiment of the present invention.
  • FIG. 16 is a schematic plan view showing an electrode structure on a piezoelectric substrate used in the fourth embodiment of the present invention.
  • FIG. 1 is a circuit diagram of an elastic wave filter device according to a first embodiment of the present invention.
  • FIG. 2 is a front sectional view of the acoustic wave filter device according to the first embodiment of the present invention.
  • the elastic wave filter device 1 is a duplexer used for a mobile phone.
  • the acoustic wave filter device 1 is commonly connected to a common terminal 2.
  • the common terminal 2 is a terminal connected to the antenna.
  • a first filter 5 as a reception filter is connected between the common terminal 2 and the reception terminal 3.
  • a second filter 6 serving as a transmission filter is connected between the common terminal 2 and the transmission terminal 4.
  • Each of the first and second filters 5 and 6 is a band-pass filter.
  • the reception band that is the pass band of the first filter 5 is defined as a first pass band.
  • a transmission band that is a pass band of the second filter 6 is defined as a second pass band.
  • the second pass band is located on the lower band side than the first pass band.
  • the first filter 5 has a longitudinally coupled resonator type elastic wave filter 11.
  • the longitudinally coupled resonator type acoustic wave filter 11 is a 5IDT type longitudinally coupled resonator type acoustic wave filter.
  • a longitudinally coupled resonator type acoustic wave filter having a 3IDT type or an IDT exceeding 5 may be used.
  • series arm resonators S1 and S2 and a parallel arm resonator P1 are provided between the longitudinally coupled resonator type acoustic wave filter 11 and the common terminal 2.
  • the series arm resonators S1 and S2 and the parallel arm resonator P1 are each formed of a 1-port elastic wave resonator.
  • a ladder type filter having series arm resonators S 1 and S 2 and a parallel arm resonator P 1 is connected to the longitudinally coupled resonator type elastic wave filter 11.
  • a pass band is formed by the longitudinally coupled resonator type elastic wave filter 11, and the attenuation characteristics of the pass band are adjusted by a ladder type filter.
  • the second filter 6 has series arm resonators S11 to S15 in order from the transmission terminal 4 side.
  • Parallel arm resonators P11 to P14 are connected between the series arm and the ground potential. All of the series arm resonators S11 to S15 and the parallel arm resonators P11 to P14 are formed of a 1-port type acoustic wave resonator.
  • the second filter 6 is a ladder type filter.
  • the circuit configuration of the second filter 6 is not limited to the ladder type, and may be configured by various band-pass filters such as those using a longitudinally coupled resonator type acoustic wave filter.
  • the impedance adjustment inductor L1 is connected between the common terminal 2 and the ground potential.
  • the feature of the acoustic wave filter device 1 is that an inductor L2 for adjusting the position of the attenuation pole is connected between the portion connected to the ground potential of the longitudinally coupled resonator type acoustic wave filter 11 and the ground terminal 12. There is. Thereby, the isolation in the pass band, that is, the transmission band of the second filter 6 can be improved. This will be described in detail later.
  • the part surrounded by the alternate long and short dash line T is the part configured in the acoustic wave filter chip.
  • a portion outside the one-dot chain line T and surrounded by the two-dot chain line U is formed in the package substrate. This will be described with reference to FIGS.
  • an acoustic wave filter chip 14 is mounted on the package substrate 13.
  • a mold resin 15 is provided so as to surround the acoustic wave filter chip 14.
  • electrode lands serving as the reception terminal 3 and the transmission terminal 4 are formed.
  • An electrode land that becomes the ground terminal 12 is also formed.
  • the acoustic wave filter chip 14 has a piezoelectric substrate 16.
  • An electrode structure for forming the first filter 5 and the second filter 6 is formed on the lower surface of the piezoelectric substrate 16.
  • FIG. 3 is a plan view schematically showing an electrode structure on the lower surface of the piezoelectric substrate 16 used in the present embodiment.
  • the electrode lands 2 a, 3 a, 4 a are provided on the lower surface of the piezoelectric substrate 16.
  • the portions where the electrode lands 2a, 3a, 4a are provided are denoted by the same reference numerals in FIG.
  • a longitudinally coupled resonator type acoustic wave filter 11, series arm resonators S1 and S2, and a parallel arm resonator P1 are provided on a line connecting the electrode land 2a and the electrode land 3a.
  • IDTs connected to the ground terminal 12 of the longitudinally coupled resonator type acoustic wave filter 11 are commonly connected by wiring and reach the electrode land 12a.
  • the electrode land 12 a is located at the center of the edge on the short side of the piezoelectric substrate 16.
  • FIG. 4 is a schematic plan view for explaining the electrode structure of the upper surface and the intermediate layer of the package substrate.
  • the solid line indicates the electrode structure on the upper surface
  • the broken line indicates the electrode structure of the second layer, which is the intermediate layer on the upper surface side
  • the alternate long and short dash line indicates the electrode structure of the third layer, which is the intermediate layer on the lower surface side.
  • FIG. 5 is a plan view schematically showing the electrode structure on the lower surface of the package substrate 13.
  • the electrode land 21 is a portion connected to the electrode land 2a of the acoustic wave filter chip 14 and is finally connected to the antenna.
  • the electrode land 22 is a portion connected to the electrode land 3 a of the acoustic wave filter chip 14.
  • the electrode land 23 is a portion connected to the electrode land 4 a of the acoustic wave filter chip 14.
  • the electrode land 24 is a part electrically connected to the electrode land 12a shown in FIGS.
  • An inductor L2 is provided on the upper surface of the package substrate 13 by wiring as a conductor pattern so as to be connected to the electrode land 24. The other end of the inductor L2 is connected to the electrode land 23.
  • the electrode land 25 and the electrode lands 26 to 28 are electrically connected to the electrode land as the ground terminal 12 provided on the lower surface of the package substrate 13. Further, as shown in FIG. 5, the reception terminal 3, the transmission terminal 4, and the common terminal 2 are configured as electrode lands provided on the lower surface of the package substrate 13.
  • the acoustic wave filter device 1 is characterized in that in order to adjust the frequency position of the attenuation pole, the inductor L2 is connected to the ground potential of the longitudinally coupled resonator type acoustic wave filter 11, and the ground terminal. 12 is connected to the terminal 12. Thereby, the isolation characteristics in the pass band of the second filter can be improved.
  • the solid line in FIG. 6 shows the isolation characteristics of the elastic wave filter device of the first embodiment.
  • a broken line indicates the isolation characteristic of the elastic wave filter device of the first comparative example.
  • the elastic wave filter device of the first comparative example is configured in the same manner as the elastic wave filter device of the first embodiment, except that the inductor L2 is not provided.
  • the first pass band of the first filter 5 is 2110 MHz to 2170 MHz.
  • the second pass band of the second filter 6 is 1920 MHz to 1980 MHz.
  • the design parameters of the elastic wave filter device 1 of the above embodiment are as follows.
  • the narrow pitch portion is a portion where the electrode finger pitch is smaller than that of the main portion.
  • a narrow pitch part is provided in the part of the adjacent side in adjacent IDT. Accordingly, in the second to fourth IDTs, narrow pitch portions are provided on both sides of the main portion.
  • the inductance value of the attenuation pole position adjusting inductor L2 was set to 0.4 nH.
  • the isolation characteristic is higher in the band of 1920 MHz to 1980 MHz, which is the second pass band of the second filter 6. It can be seen that it can be greatly improved. This is because an attenuation pole is formed by the capacitive component between the comb electrodes of the longitudinally coupled resonator type elastic wave filter 11 and the inductor L2, thereby improving the isolation in the second passband. It is thought that it is planned. Meanwhile, the capacitance between the comb electrodes in the longitudinally coupled resonator type acoustic wave filter 11 needs to be adjusted as a parameter for forming the first passband.
  • the isolation characteristic it cannot be positively used as a parameter for improving the isolation of the second passband of the second filter 6.
  • the isolation in the second passband can be effectively improved.
  • the inductor L2 is provided in the package substrate 13 by wiring. Therefore, the inductor L2 can be easily formed.
  • the inductor L2 when providing the inductor L2 in the package substrate 13, you may provide the part which functions as an inductance element in the arbitrary positions in the package substrate 13 not only in the conductor pattern by routing of wiring.
  • the inductor L2 is provided in the package substrate 13, an inductor having a desired inductance value can be easily provided.
  • FIG. 7 is a circuit diagram of an elastic wave filter device according to a second embodiment of the present invention.
  • FIG. 8 is a schematic plan view for explaining an electrode structure on a piezoelectric substrate used in the acoustic wave filter device of the second embodiment.
  • FIG. 9 is a schematic plan view showing the electrode structure of the upper surface, the second layer, and the third layer of the package substrate used in the second embodiment.
  • FIG. 10 is a schematic plan view for explaining the electrode structure on the lower surface of the package substrate used in the second embodiment.
  • the inductor L2 is provided in the elastic wave filter chip indicated by the alternate long and short dash line T.
  • the circuit of the elastic wave filter apparatus 31 is the same as the circuit of the elastic wave filter apparatus 1 shown in FIG.
  • an inductor L2 is formed on the lower surface of the piezoelectric substrate 16 with a coiled conductor pattern.
  • the inductor L2 is provided on the bottom surface of the piezoelectric substrate 16 so as to be electrically connected to a portion connected to the ground potential of the longitudinally coupled resonator type acoustic wave filter 11.
  • the electrode structure on the bottom surface of the piezoelectric substrate 16 is the same as that of the elastic wave filter device 1 of the first embodiment.
  • the inductor L ⁇ b> 2 shown in FIG. 4 is not provided on the upper surface of the package substrate 13.
  • Other configurations of the package substrate 13 are the same as those of the package substrate 13 in the first embodiment.
  • the inductor L2 may be provided on the piezoelectric substrate 16 of the acoustic wave filter chip 14 instead of the package substrate 13 side.
  • the coiled conductor pattern for the inductor L2 can be formed by the thin film formation method simultaneously with the electrode structure such as the IDT shown in FIG. Therefore, the inductor L2 can be formed with high accuracy. Therefore, in the acoustic wave filter device 31, variation in characteristics can be reduced.
  • FIG. 11 shows the isolation characteristics of the second embodiment and the isolation characteristics of the second comparative example.
  • the solid line in FIG. 11 shows the isolation characteristic of the second embodiment, and the broken line shows the isolation characteristic of the second comparative example.
  • the inductor L2 is formed by a coiled conductor pattern provided on the piezoelectric substrate 16, and the inductance value is 0.6 nH.
  • the second comparative example is the same as the second embodiment except that the inductor L2 is not provided.
  • the design parameters of the first and second filters 5 and 6 are the same as those in the first embodiment.
  • the isolation characteristics in the second pass band can be effectively improved as compared with the second comparative example.
  • FIG. 12 is a circuit diagram of an acoustic wave filter device 41 according to the third embodiment of the present invention
  • FIG. 13 is a schematic plan view showing an electrode structure on the piezoelectric substrate used in the present embodiment. is there.
  • an inductor L2 is connected to a portion of the longitudinally coupled resonator type acoustic wave filter 11 that is connected to the ground potential.
  • the inductor L2 is connected by a wiring 43 to a wiring 42 connected to the ground potential of the parallel arm resonator P1.
  • the inductor L2 is connected between the ground terminal 12 connected to the ground potential of the acoustic wave filter device 41 and the portion connected to the ground potential of the longitudinally coupled resonator type acoustic wave filter 11.
  • the inductor L2 is provided in the acoustic wave filter chip as in the second embodiment. That is, as shown in FIG.
  • FIG. 14 is a diagram illustrating isolation characteristics of the elastic wave filter devices of the second embodiment, the third embodiment, and the second comparative example.
  • the solid line shows the result of the third embodiment
  • the alternate long and short dash line shows the result of the second embodiment
  • the broken line shows the result of the second comparative example.
  • the third embodiment can effectively improve the isolation characteristics in the second passband as compared with the second comparative example, as in the second embodiment.
  • the inductor L2 is commonly connected to the ground potential side end of the parallel arm resonator P1 and connected to the ground terminal 12 with respect to the ground terminal 12 connected to the ground potential of the acoustic wave filter device 41. Also good. That is, the end of the inductor L2 on the ground potential side is not necessarily connected to the ground terminal 12 alone.
  • FIG. 15 is a circuit diagram of an acoustic wave filter device according to a fourth embodiment of the present invention
  • FIG. 16 is a schematic plan view showing an electrode structure on a piezoelectric substrate used in the fourth embodiment. It is.
  • the inductor L2 is provided on the piezoelectric substrate 16 of the acoustic wave filter chip 14.
  • the parallel arm resonator P ⁇ b> 1 is provided between the longitudinally coupled resonator type elastic wave filter 11 and the receiving terminal 3.
  • the parallel arm resonator P ⁇ b> 1 may be provided between the longitudinally coupled resonator type acoustic wave filter 11 and the receiving terminal 3.
  • the end of the inductor L2 on the ground potential side is connected to the wiring 52 connected to the ground potential of the parallel arm resonator P1 on the piezoelectric substrate 16.
  • the number and arrangement of the series arm resonators and the parallel arm resonators connected to the longitudinally coupled resonator type acoustic wave filter 11 are not particularly limited.
  • the end on the ground potential side of the parallel arm resonator P1 and the end on the ground potential side of the inductor L2 are commonly connected and electrically connected to the ground terminal 12.
  • the first filter 5 having a relatively high passband includes a longitudinally coupled resonator type elastic wave filter and at least one of a series arm resonator and a parallel arm resonator.
  • the circuit configuration of the first filter 5 is not particularly limited.
  • the second filter 6 is not particularly limited with respect to the circuit configuration and the elements to be used as long as the second filter 6 has a second pass band that is lower than the first filter 5.
  • the duplexer has been described as an example.
  • the present invention is also applicable to a CA (CARRIER AGGREGATION) filter device in which three or more band-pass filters are bundled on one end side. Can do.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

L'invention porte sur un dispositif de filtre à ondes acoustiques ayant des caractéristiques d'isolation améliorées. Dans un dispositif de filtre à ondes acoustiques 1, un premier filtre 5 qui a une première bande passante et comprend un filtre à ondes acoustiques de type résonateur à couplage vertical 11 et au moins un des résonateurs à bras en série S1, S2 et un résonateur à bras parallèles P1, et un second filtre 6 qui a une seconde bande passante située dans une région de fréquences inférieure à la première bande passante sont connectés en commun à un côté d'extrémité de celui-ci. Une bobine d'induction L2 est disposée entre une borne de masse 12 et une partie du filtre à ondes acoustiques de type résonateur à couplage vertical 11 qui doit être connecté à un potentiel de masse.
PCT/JP2017/018834 2016-06-03 2017-05-19 Dispositif de filtre à ondes acoustiques WO2017208856A1 (fr)

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JP2016-111707 2016-06-03
JP2016111707 2016-06-03

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170117873A1 (en) * 2015-10-26 2017-04-27 Murata Manufacturing Co., Ltd. Band pass filter and duplexer
CN110601676A (zh) * 2018-05-23 2019-12-20 株式会社村田制作所 多路复用器和通信装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008271230A (ja) * 2007-04-20 2008-11-06 Fujitsu Ltd アンテナ分波器
WO2012169231A1 (fr) * 2011-06-09 2012-12-13 株式会社村田製作所 Dispositif de filtre à onde élastique
WO2016013330A1 (fr) * 2014-07-22 2016-01-28 株式会社村田製作所 Duplexeur

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008271230A (ja) * 2007-04-20 2008-11-06 Fujitsu Ltd アンテナ分波器
WO2012169231A1 (fr) * 2011-06-09 2012-12-13 株式会社村田製作所 Dispositif de filtre à onde élastique
WO2016013330A1 (fr) * 2014-07-22 2016-01-28 株式会社村田製作所 Duplexeur

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170117873A1 (en) * 2015-10-26 2017-04-27 Murata Manufacturing Co., Ltd. Band pass filter and duplexer
US9998098B2 (en) * 2015-10-26 2018-06-12 Murata Manufacturing Co., Ltd. Band pass filter and duplexer
CN110601676A (zh) * 2018-05-23 2019-12-20 株式会社村田制作所 多路复用器和通信装置
CN110601676B (zh) * 2018-05-23 2023-07-14 株式会社村田制作所 多路复用器和通信装置

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