WO2017085200A1 - Leuchtdiodenchip und verfahren zur herstellung eines leuchtdiodenchips - Google Patents
Leuchtdiodenchip und verfahren zur herstellung eines leuchtdiodenchips Download PDFInfo
- Publication number
- WO2017085200A1 WO2017085200A1 PCT/EP2016/078032 EP2016078032W WO2017085200A1 WO 2017085200 A1 WO2017085200 A1 WO 2017085200A1 EP 2016078032 W EP2016078032 W EP 2016078032W WO 2017085200 A1 WO2017085200 A1 WO 2017085200A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- semiconductor layer
- passivation layer
- layer sequence
- semiconductor
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000004065 semiconductor Substances 0.000 claims abstract description 105
- 238000002161 passivation Methods 0.000 claims abstract description 63
- 239000002800 charge carrier Substances 0.000 claims abstract description 28
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 31
- IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 16
- 239000002131 composite material Substances 0.000 claims description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 238000005452 bending Methods 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims description 2
- 239000007858 starting material Substances 0.000 description 10
- 238000000231 atomic layer deposition Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000005424 photoluminescence Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
Definitions
- the document DE 102015120323 relates to a
- Encapsulation layer extends in places through the reflective layer sequence into a semiconductor layer sequence.
- the disclosure of the document DE 102015120323 is hereby incorporated by reference.
- Light-emitting diode chips in particular based on InGaAlP, often have an efficiency maximum at comparatively high current densities due to non-radiative losses in the active radiation-generating zone on etched side surfaces. This limits the use of such LED chips at low current densities.
- An object of the present application is to provide a
- the light-emitting diode chip has an epitaxial semiconductor layer sequence with an active zone, which generates electromagnetic radiation during operation.
- the light-emitting diode chip comprises a
- Passivation layer in which electrical charge carriers are statically fixed or which leads to a saturation of the surface states of the semiconductor layer sequence.
- the passivation layer is preferably applied to a side surface of the semiconductor layer sequence and preferably covers at least the active zone laterally.
- Passivation layer over the entire surface over the side surface of the epitaxial semiconductor layer sequence extends.
- the passivation layer may also be at least partially on a light exit surface of the epitaxial semiconductor layer sequence or of the light-emitting diode chip
- statically fixed charge carriers so that accumulate in the adjacent to the passivation layer semiconductor material of the semiconductor layer sequence carriers with opposite electrical charge.
- the passivation layer is in direct contact with the material of the epitaxial
- Semiconductor layer sequence particularly preferably has a common interface.
- the statically fixed charge carriers are electrons.
- statically fixed charges in the passivation layer particularly preferably achieve a bending of the band edge of the conduction band and the valence band in the at
- statically fixed charge carriers in the passivation layer lead to a band edge bending in the region of the passivation layer to lower energies, so that here electrons in the border region to the
- the area of the band edge bending at the interface semiconductor layer sequence - passivation layer has, for example, an extension between 1 nanometer and 100 nanometers.
- the band edge bend of valence band edge and conduction band edge is at least 0.1 eV.
- the charge carrier density of the statically fixed charge carrier in the boundary region between the semiconductor layer sequence and the passivation layer is the charge carrier density of the statically fixed charge carrier in the boundary region between the semiconductor layer sequence and the passivation layer
- Charge carrier density of the statically fixed charge carriers in the boundary region between the semiconductor layer sequence and the passivation layer at least 10 12 cm -2 on.
- the I I I I / V semiconductor composite material is particularly preferably a phosphide
- a phosphide compound semiconductor material is a
- Semiconductor composite materials containing phosphorus such as Materials from the system In x Al y Gai x - y P with 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1 and x + y ⁇ 1.
- the passivation layer preferably has a thickness of between 1 nanometer and 100 nanometers inclusive. Particularly preferably, the passivation layer is made very thin. Preferably, the thickness exceeds the
- statically fixed charges in the passivation layer advantageously lead to a shielding of the oppositely charged type of charge carriers on the side surface. Since both types of charge carriers must be present locally for nonradiative effects, the nonradiative rate, which leads to losses, is significantly reduced at the side surfaces. This leads in particular to an increase in efficiency
- Light-emitting diode chips with a small lateral extent.
- the light-emitting diode chips particularly preferably have an edge length which does not exceed 1 millimeter.
- the efficiency increase is particularly effective with a light-emitting diode chip, which is a comparatively high
- the ratio of side surface to light exit surface of the LED chip is preferably at least 0.01.
- the passivation layer preferably comprises one of the following materials or is formed of one of the following materials: alumina, silica, aluminum phosphide, indium aluminum phosphide.
- the semiconductor layer sequence is based on a phosphide compound semiconductor material or is formed from a phosphide compound semiconductor material, wherein the
- Passivation layer is particularly preferred
- the passivation layer is formed of two individual layers, one of which
- the passivation layer has disordered regions, one of which
- the passivation layer is very thin and has
- the regions comprising alumina preferably predominate the regions comprising aluminum phosphide.
- the regions comprising aluminum phosphide preferably predominate the regions comprising aluminum phosphide.
- Passivation layer of at least 95% alumina Passivation layer of at least 95% alumina.
- a passivation layer is applied, in the electrical
- the passivation layer covers at least the active radiation-generating zone of the semiconductor layer sequence.
- the side surface of the semiconductor layer sequence is usually initially produced partly by etching, while another part of the side surface are finally produced by another separation process, such as breaking, sawing or laser cutting. Particularly preferably, the active zone of the semiconductor layer sequence is separated by etching.
- a semiconductor layer sequence is provided which is based on a phosphide compound semiconductor material or consists of a phosphide compound semiconductor material.
- a non-stoichiometric silicon dioxide layer SiO x layer
- SiO x layer is applied in direct contact with the side surface of the semiconductor layer sequence.
- an aluminum phosphide layer (Al 2 O 3 layer) is applied in direct contact with the non-stoichiometric silicon dioxide layer, more preferably by an ALD method.
- ALD atomic layer deposition
- CVD chemical vapor deposition
- the surface to be coated is made available in a volume, and at least one starting material is made available in the volume from which a chemical reaction takes place on the surface to be coated.
- Atomic layer deposition is used here to denote a CVD process in which the first gaseous starting material is supplied to the volume in which the surface to be coated is provided, so that the first gaseous starting material adsorbs onto the surface. After a preferably complete or almost complete covering of the surface with the first
- Starting material is the part of the first starting material, which is still present in gaseous or not adsorbed on the surface, usually removed again from the volume and supplied to the second starting material.
- the layer composite is annealed with the semiconductor layer sequence and the layers applied thereon.
- the temperature for annealing is preferably between 100 ° C and 800 ° C inclusive.
- FIG. 6 shows a schematic sectional view of a
- Figure 7 shows schematically conduction band and valence band of
- Figure 8 shows a schematic sectional view of a
- FIG. 9 shows measurements of the photoluminescence intensity of
- Sample having the structure according to FIG. 8 as a function of the thickness x of the aluminum phosphide layer.
- the active zone 2 is suitable for generating electromagnetic radiation during operation of the light-emitting diode chip.
- the semiconductor layer sequence 1 is particularly preferably based on a phosphide compound semiconductor material.
- a first main surface 3 of the epitaxially grown semiconductor layer sequence 1 is a first one
- a second electrical Contact 6 is applied.
- the first electrical contact 4 is a p-contact and the second electrical contact 6 is an n-contact.
- Silicon oxide layer 7 (SiO x layer) deposited in direct contact with the side surface 8 of the semiconductor layer sequence 1 by means of thermal evaporation.
- the non-stoichiometric silicon dioxide layer 7 in particular covers the active zone 2.
- the second main surface 5 of the semiconductor layer sequence 1 and the first electrical contact 4 are at least partially covered by the non-stoichiometric silicon oxide layer 7.
- Silicon oxide layer 7 an aluminum oxide layer 9 (Al 2 O 3 - layer) applied, preferably with an ALD method.
- Passivation layer 10 has static fixed
- Charge carriers preferably electrons.
- Alumina layer 9 and the near-alumina Layer form the passivation layer 10 in the present embodiment.
- an epitaxial semiconductor layer sequence 1 with electrical contacts 4, 6 is again provided in a first step, as already described with reference to FIGS. 4 and 5.
- an aluminum phosphide layer 11 (AIP layer) is applied in direct contact with the side surface 8 of the semiconductor layer sequence 1, for example epitaxially (FIG. 5).
- the aluminum phosphide layer 11 in particular covers the active zone 2 and extends up to the first main surface 3 of FIG
- the layer composite of Figure 5 is particularly preferably annealed in a next step (not
- the aluminum phosphide is at least partially converted into aluminum oxide (Al x O y ).
- the aluminum phosphide / oxide layer 11 forms in the
- the passivation layer 10 from. This has fixed electrical charge carriers,
- a light-emitting diode chip is produced, as shown schematically in FIG. 6, for example.
- the light-emitting diode chip according to the exemplary embodiment of FIG. 6 has an epitaxially grown semiconductor layer sequence 1 based on a phosphide-compound semiconductor material.
- the semiconductor layer sequence 1 comprises an active zone 2, which is suitable for generating electromagnetic radiation which is emitted by a light exit surface 12 during operation of the light-emitting diode chip.
- Light exit surface 12 of the LED chip is a
- Passivation layer 10 applied.
- the passivation layer 10 extends over the active zone 2.
- the passivation layer 10 are electrical
- the electrical charge carriers are electrons. Furthermore, it is also possible that the passivation layer 10 saturates surface states of the adjacent semiconductor material.
- Parts of the side surface 8 of the semiconductor layer sequence 1 according to the embodiment of FIG. 6 have been obtained by dry etching. These parts of the side surface 8 are characterized here by the fact that they are formed obliquely to a central axis of the LED chip. Another part of the side surface 8 of the semiconductor layer sequence 1 is in this case parallel to a center axis of the light-emitting diode chip arranged. This part of the LED chip was achieved by another separation process, for example by means of sawing or laser cutting.
- FIG. 7 schematically shows the course of the conduction band edge CB and the valence band edge VB in the region of
- the passivation layer 10 in the present case comprises a
- the valence band edge VB and the conduction band edge CB has a lowering towards lower energies, in which electrons are statically fixed.
- an increase of the valence band edge VB is formed, in which holes are statically fixed. In this way arises at the interface
- Semiconductor Layer Sequence 1 - Passivation Layer 10 is a positive charge shield that at least reduces non-radiative recombination.
- the sample according to the schematic representation of FIG. 8 has a gallium arsenide substrate 13 on which an approximately 1 ⁇ m thick InAlP layer has grown epitaxially.
- an InGaAlP semiconductor layer sequence 1 with an active zone 2 that emits radiation with a wavelength of approximately 620 nanometers is epitaxially grown on the InAlP layer, approximately 300 nanometers thick.
- an aluminum phosphide layer 11 having a very small thickness x is applied to the epitaxially grown semiconductor layer sequence 1. It has been shown experimentally that the aluminum phosphide layer 11 is almost in air completely converted into an aluminum oxide layer (Al x O y layer).
- the thickness of the aluminum phosphide / oxide layer 11 x was now varied and the photoluminescence of the sample was measured.
- Photoluminescence are plotted in FIG. 9 as a function of the thickness x.
- the measurement according to FIG. 9 shows that with a thickness x of approximately 2 nanometers, the photoluminescence is a factor of 10 compared to a sample without
- Aluminum phosphide / oxide layer 11 is increased.
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018521629A JP2018536282A (ja) | 2015-11-19 | 2016-11-17 | 発光ダイオードチップおよび発光ダイオードチップの製造方法 |
US15/777,633 US10580938B2 (en) | 2015-11-19 | 2016-11-17 | Light-emitting diode chip, and method for manufacturing a light-emitting diode chip |
DE112016005319.3T DE112016005319B4 (de) | 2015-11-19 | 2016-11-17 | Verfahren zur Herstellung eines Leuchtdiodenchips |
CN201680067380.8A CN108292697B (zh) | 2015-11-19 | 2016-11-17 | 发光二极管芯片和用于制造发光二极管芯片的方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102015120089.9 | 2015-11-19 | ||
DE102015120089.9A DE102015120089A1 (de) | 2015-11-19 | 2015-11-19 | Leuchtdiodenchip und Verfahren zur Herstellung eines Leuchtdiodenchips |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2017085200A1 true WO2017085200A1 (de) | 2017-05-26 |
Family
ID=57326429
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2016/078032 WO2017085200A1 (de) | 2015-11-19 | 2016-11-17 | Leuchtdiodenchip und verfahren zur herstellung eines leuchtdiodenchips |
Country Status (6)
Country | Link |
---|---|
US (1) | US10580938B2 (de) |
JP (1) | JP2018536282A (de) |
CN (1) | CN108292697B (de) |
DE (2) | DE102015120089A1 (de) |
TW (1) | TWI620341B (de) |
WO (1) | WO2017085200A1 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102017108199A1 (de) | 2017-04-18 | 2018-10-18 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Betriebsverfahren für ein optoelektronisches Halbleiterbauteil |
DE102017112875A1 (de) * | 2017-06-12 | 2018-12-13 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip und Verfahren zur Herstellung eines Leuchtdiodenchips |
FR3077931A1 (fr) * | 2018-02-14 | 2019-08-16 | Centre National De La Recherche Scientifique | Dispositif a semi-conducteur avec structure de passivation des surfaces recombinantes |
Citations (5)
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GB2133928A (en) * | 1982-12-04 | 1984-08-01 | Plessey Co Plc | Coatings for semiconductor devices |
US20080241421A1 (en) * | 2007-04-02 | 2008-10-02 | Miin Jang Chen | Optoelectronic device and method of fabricating the same |
DE102009035429A1 (de) * | 2009-07-31 | 2011-02-03 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip |
EP2423986A2 (de) * | 2010-08-30 | 2012-02-29 | LG Innotek Co., Ltd. | Lichtemittierende Vorrichtung |
WO2015044529A1 (en) * | 2013-09-27 | 2015-04-02 | Lumichip Oy | Assembly level encapsulation layer with multifunctional purpose, and method of producing the same |
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DE102004029412A1 (de) * | 2004-02-27 | 2005-10-13 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines solchen Halbleiterchips |
US7791061B2 (en) * | 2004-05-18 | 2010-09-07 | Cree, Inc. | External extraction light emitting diode based upon crystallographic faceted surfaces |
KR101232507B1 (ko) * | 2006-04-10 | 2013-02-12 | 삼성전자주식회사 | 표면발광소자 및 그의 제조방법 |
KR100867541B1 (ko) | 2006-11-14 | 2008-11-06 | 삼성전기주식회사 | 수직형 발광 소자의 제조 방법 |
KR20110006652A (ko) | 2008-03-25 | 2011-01-20 | 라티스 파워(지앙시) 코포레이션 | 양면 패시베이션을 갖는 반도체 발광 소자 |
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TWI408834B (zh) * | 2010-04-02 | 2013-09-11 | Miin Jang Chen | 基於奈米晶粒之光電元件及其製造方法 |
CN102544009B (zh) * | 2010-12-08 | 2014-03-26 | 中国科学院微电子研究所 | 一种高迁移率cmos集成单元 |
TW201310667A (zh) * | 2011-08-17 | 2013-03-01 | Epistar Corp | 太陽能電池 |
JP6035736B2 (ja) * | 2011-10-26 | 2016-11-30 | ソニー株式会社 | 発光素子およびその製造方法、並びに発光装置 |
KR101867999B1 (ko) * | 2011-10-31 | 2018-06-18 | 삼성전자주식회사 | Iii-v족 물질층을 형성하는 방법, iii-v족 물질층을 포함하는 반도체 소자 및 그 제조방법 |
TWI452714B (zh) * | 2012-01-20 | 2014-09-11 | Univ Nat Taiwan | 太陽能電池及其製造方法 |
TWI455333B (zh) * | 2012-04-09 | 2014-10-01 | Sino American Silicon Prod Inc | 太陽能電池 |
US9570662B2 (en) * | 2012-07-10 | 2017-02-14 | Osram Opto Semiconductors Gmbh | Method of encapsulating an optoelectronic device and light-emitting diode chip |
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US9865772B2 (en) * | 2015-01-06 | 2018-01-09 | Apple Inc. | LED structures for reduced non-radiative sidewall recombination |
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DE102015108529A1 (de) * | 2015-05-29 | 2016-12-01 | Osram Opto Semiconductors Gmbh | Halbleiterlaserdiode und Verfahren zur Herstellung einer Halbleiterlaserdiode |
DE102015212477A1 (de) * | 2015-07-03 | 2017-01-05 | Osram Oled Gmbh | Organisches lichtemittierendes Bauelement und Verfahren zur Herstellung eines organischen lichtemittierenden Bauelements |
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-
2015
- 2015-11-19 DE DE102015120089.9A patent/DE102015120089A1/de not_active Withdrawn
-
2016
- 2016-11-17 WO PCT/EP2016/078032 patent/WO2017085200A1/de active Application Filing
- 2016-11-17 US US15/777,633 patent/US10580938B2/en active Active
- 2016-11-17 DE DE112016005319.3T patent/DE112016005319B4/de active Active
- 2016-11-17 JP JP2018521629A patent/JP2018536282A/ja active Pending
- 2016-11-17 CN CN201680067380.8A patent/CN108292697B/zh active Active
- 2016-11-18 TW TW105137868A patent/TWI620341B/zh active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2133928A (en) * | 1982-12-04 | 1984-08-01 | Plessey Co Plc | Coatings for semiconductor devices |
US20080241421A1 (en) * | 2007-04-02 | 2008-10-02 | Miin Jang Chen | Optoelectronic device and method of fabricating the same |
DE102009035429A1 (de) * | 2009-07-31 | 2011-02-03 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip |
EP2423986A2 (de) * | 2010-08-30 | 2012-02-29 | LG Innotek Co., Ltd. | Lichtemittierende Vorrichtung |
WO2015044529A1 (en) * | 2013-09-27 | 2015-04-02 | Lumichip Oy | Assembly level encapsulation layer with multifunctional purpose, and method of producing the same |
Also Published As
Publication number | Publication date |
---|---|
DE112016005319B4 (de) | 2024-02-15 |
CN108292697B (zh) | 2020-03-06 |
US20180374994A1 (en) | 2018-12-27 |
TWI620341B (zh) | 2018-04-01 |
US10580938B2 (en) | 2020-03-03 |
CN108292697A (zh) | 2018-07-17 |
DE112016005319A5 (de) | 2018-08-09 |
DE102015120089A1 (de) | 2017-05-24 |
JP2018536282A (ja) | 2018-12-06 |
TW201727935A (zh) | 2017-08-01 |
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