GB2133928A - Coatings for semiconductor devices - Google Patents
Coatings for semiconductor devices Download PDFInfo
- Publication number
- GB2133928A GB2133928A GB08332301A GB8332301A GB2133928A GB 2133928 A GB2133928 A GB 2133928A GB 08332301 A GB08332301 A GB 08332301A GB 8332301 A GB8332301 A GB 8332301A GB 2133928 A GB2133928 A GB 2133928A
- Authority
- GB
- United Kingdom
- Prior art keywords
- compound
- coating
- junction
- layer
- inp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 20
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 150000001875 compounds Chemical class 0.000 claims abstract description 19
- 239000011248 coating agent Substances 0.000 claims abstract description 16
- 239000004411 aluminium Substances 0.000 claims abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 8
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910021478 group 5 element Inorganic materials 0.000 claims description 2
- 239000012212 insulator Substances 0.000 abstract description 5
- 230000002411 adverse Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 238000009825 accumulation Methods 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- 230000001771 impaired effect Effects 0.000 abstract description 2
- 150000004767 nitrides Chemical class 0.000 abstract description 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 abstract 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910009973 Ti2O3 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- GQUJEMVIKWQAEH-UHFFFAOYSA-N titanium(III) oxide Chemical compound O=[Ti]O[Ti]=O GQUJEMVIKWQAEH-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/298—Semiconductor material, e.g. amorphous silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/432—Heterojunction gate for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0037—Devices characterised by their operation having a MIS barrier layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
- H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Junction Field-Effect Transistors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The performance of semiconductor devices having p-n junctions is often impaired by current leakage across the junction at the surface of the device where the p-n junction is exposed. Coating the junction with a conventional insulator, such as silicon, aluminium or titanium oxide is not very successful for reducing this leakage and whilst nitride and oxide layers deposited on InP and InGaAsP semiconductors make good insulators, charge accumulation at the oxide/ semiconductor interface can cause adverse effects on performance. It is thus proposed to use the group III-V ternary compound AlAsSb or AlGaAsSb as a semi-insulating passivating medium (22) for InP and InGaAsP devices and as an insulating material in MIS devices. <IMAGE>
Description
SPECIFICATION
Coatings for semiconductor devices
This invention relates to coatings for semiconductor devices and particularly to coatings for the insulation and passivation of semiconductor devices.
The performance of semiconductor devices having p-n junctions is often impaired because leakage currents shunt the junction at the surface of the device where p-n junction(s) are exposed.
The leakage path is probably due to minority carrier recombination at surface states and conduction due to surface contaminants. Coating with conventional insulators such as silicon oxides, silicon nitride, boron nitride, Al2O3, Ti2O3, etc. is normally only marginally successful in suppressing and passivating against such current leakage.
Nitride and oxide layers deposited on InP and
InGaAsP semiconductors make good insulators but charge accumulation at the oxide/semiconductor interface can cause drifting and other adverse effects.
It is an object of the present invention therefore to provide a coating for a semiconductor which will reduce or prevent such leakage currents without having adverse effects on the performance of the semiconductor.
According to the present invention a coating for a semiconductor comprises a layer of a compound of at least one Group Ill element selected from aluminium and gallium and at least one Group V element selected from arsenic and antimony.
Preferably the compound is a ternary compound.
Thus, the compound may be aluminium arsenide antimonide or gallium arsenide antimonide. Alternatively the compound may be quaternary and comprise aluminium gallium arsenide antimonide.
Preferably the compound has a formula of AlAs1~xSbx whereby the composition can be adjusted to deposit a lattice matched layer of the compound.
Thus, for example, if x=0.35 a lattice matched epitaxial layer of Also 65 So 35 can be deposited on to an InP or an InGaAsP device.
The material with x=0.35 will have an indirect bandgap around 1.95eV and the undoped material will have a high resistivity. The material can be deposited either by established liquid phase epitaxial growth techniques, by Molecular
Beam Epitaxy or by Metallorganic Chemical
Vapour Deposition techniques.
The coating with epitaxial near lattice matched
AlAsSb will make the device effectively more planar, it will cause saturation of surface dangling bonds and therefore reduction of surface states and will protect the exposed junctions from contamination.
Embodiments of the invention will now be described by way of example only with reference to the accompanying drawings in which
Figure 1 is a cross-sectional view through an
InGaAs/lnP p-i-n photodiode having a passivating coating in accordance with the invention
Figure 2 is a cross-sectional view through an
InP or InGaAs/lnP metal insulator semiconductor field effect transistor having a semi-insulating coating in accordance with the invention and
Figure 3 is a cross-sectional view through an
AlAsSb/GalnAsP double heterostructure multilayer for light sources and detectors.
The coating can be used to suppress the current leakage which shunts the device p-n junction by passivating the device against surface contamination and to form an insulating or semiinsulating layer on the surface of the device which would not tend to become charged.
An illustration of the former use is shown in
Figure 1. This shows a laser layer structure comprising an InP substrate 10 having an n type
InP buffer layer 12. On the buffer layer is arranged an InGaAs active laser layer 14, a p type InP layer 16 and a metal contact 18. Further metal contacts 20 are arranged on the opposite side or rear of the substate 10. Extending between the substrate 10 and the edges of the metal contact 18 is a passivating infil 22 of AlAsSb which also covers the sides of the layer 12, 14 and 16. The infil 22 suppresses current leakage from the p-n junction and forms a heterojunction barrier for the laser. This provides heterobarriers of around 1 eV compared to 0.35 eV for a conventional device.
The infil of AlAsSb can be used in both stripe and buried heterostructure laser geometries.
The field effect transistor shown in Figure 2 comprises a semi-insulating InP substrate 24 and an InP or InGaAs n type channel layer 26.
Metallised areas 28 and 30 formed on this layer provide drain and source contacts respectively and between these areas is arranged an AISbAs semi-insulating layer 32. A gate 34 is formed on the layer 32 by metallising a further area. The device shown in Figure 3 is suitable for a light source or detector and consists of an n type InP substrate 36, an n type AlAsSb layer 38, an active
GalnAsP layer 40, a p type AlAsSb layer 42 and a p type GalnAs layer 44.
Claims (8)
1. A coating for a semiconductor comprising a layer of a compound of at least one group Ill element selected from aluminium and gallium and at least one group V element selected from arsenic and antimony.
2. A coating as claimed in claim 1 in which the compound is a ternary compound.
3. A coating as claimed in claim 2 in which the compound comprises aluminium arsenide antimonide.
4. A coating as claimed in claim 2 in which the compound comprises gallium arsenide antimonide.
5. A coating as claimed in claim 1 in which the compound comprises the quaternary compound aluminium gallium arsenide antimonide.
6. A coating as claimed in claim 3 in which the compound has the formula AIAs(1-x) Sbx whereby the composition can be adjusted to deposit a lattice matched layer of the compound.
7. A coating as claimed in claim 6 in which the compound has the formula AlAs06s So 35 whereby the compound is lattice matched to InP and InGaAsP semiconductor devices.
8. A coating for a semiconductor substantially as hereinbefore described with reference to
Figures 1,2 or 3 of the accompanying drawings.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB08332301A GB2133928B (en) | 1982-12-04 | 1983-12-02 | Coatings for semiconductor devices |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB8234653 | 1982-12-04 | ||
| GB08332301A GB2133928B (en) | 1982-12-04 | 1983-12-02 | Coatings for semiconductor devices |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB8332301D0 GB8332301D0 (en) | 1984-01-11 |
| GB2133928A true GB2133928A (en) | 1984-08-01 |
| GB2133928B GB2133928B (en) | 1986-07-30 |
Family
ID=26284595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB08332301A Expired GB2133928B (en) | 1982-12-04 | 1983-12-02 | Coatings for semiconductor devices |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB2133928B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4794439A (en) * | 1987-03-19 | 1988-12-27 | General Electric Company | Rear entry photodiode with three contacts |
| WO2006013034A1 (en) * | 2004-07-30 | 2006-02-09 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Semiconductor element with a passivation layer and method for production thereof |
| WO2017085200A1 (en) * | 2015-11-19 | 2017-05-26 | Osram Opto Semiconductors Gmbh | Light-emitting diode chip, and method for manufacturing a light-emitting diode chip |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1111991A (en) * | 1965-02-25 | 1968-05-01 | Nat Res Dev | Method of passivation of pn junction devices |
| GB2013028A (en) * | 1978-01-13 | 1979-08-01 | Western Electric Co | Semiconductor device |
| GB1563270A (en) * | 1975-12-13 | 1980-03-26 | Sony Corp | Methods of forming oxide layers on semiconductor substrates |
| GB1565990A (en) * | 1975-12-19 | 1980-04-30 | Philips Electronic Associated | Semiconductor device having a passivated surface |
| GB2046994A (en) * | 1979-04-10 | 1980-11-19 | Chemla D Cot L Jerphagnon J | Insulatorsemiconductor structure |
| GB1594246A (en) * | 1976-12-31 | 1981-07-30 | Philips Nv | Semiconductor device having a passivating layer |
-
1983
- 1983-12-02 GB GB08332301A patent/GB2133928B/en not_active Expired
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1111991A (en) * | 1965-02-25 | 1968-05-01 | Nat Res Dev | Method of passivation of pn junction devices |
| GB1563270A (en) * | 1975-12-13 | 1980-03-26 | Sony Corp | Methods of forming oxide layers on semiconductor substrates |
| GB1565990A (en) * | 1975-12-19 | 1980-04-30 | Philips Electronic Associated | Semiconductor device having a passivated surface |
| GB1594246A (en) * | 1976-12-31 | 1981-07-30 | Philips Nv | Semiconductor device having a passivating layer |
| GB2013028A (en) * | 1978-01-13 | 1979-08-01 | Western Electric Co | Semiconductor device |
| GB2046994A (en) * | 1979-04-10 | 1980-11-19 | Chemla D Cot L Jerphagnon J | Insulatorsemiconductor structure |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4794439A (en) * | 1987-03-19 | 1988-12-27 | General Electric Company | Rear entry photodiode with three contacts |
| WO2006013034A1 (en) * | 2004-07-30 | 2006-02-09 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Semiconductor element with a passivation layer and method for production thereof |
| JP2008508700A (en) * | 2004-07-30 | 2008-03-21 | フラウンホーファー−ゲゼルシャフト ツル フェルデルング デル アンゲヴァンテン フォルシュング エー ファウ | Semiconductor device provided with passivation layer and method for manufacturing the semiconductor device |
| US7745908B2 (en) | 2004-07-30 | 2010-06-29 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Semiconductor component containing compound of aluminum, gallium, indium, arsenic, and antimony has mesa structure whose sides have passivation layer of compound of aluminum, gallium, arsenic, and antimony |
| WO2017085200A1 (en) * | 2015-11-19 | 2017-05-26 | Osram Opto Semiconductors Gmbh | Light-emitting diode chip, and method for manufacturing a light-emitting diode chip |
| US10580938B2 (en) | 2015-11-19 | 2020-03-03 | Osram Oled Gmbh | Light-emitting diode chip, and method for manufacturing a light-emitting diode chip |
Also Published As
| Publication number | Publication date |
|---|---|
| GB8332301D0 (en) | 1984-01-11 |
| GB2133928B (en) | 1986-07-30 |
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