WO2017057155A1 - 研磨用組成物 - Google Patents
研磨用組成物 Download PDFInfo
- Publication number
- WO2017057155A1 WO2017057155A1 PCT/JP2016/077905 JP2016077905W WO2017057155A1 WO 2017057155 A1 WO2017057155 A1 WO 2017057155A1 JP 2016077905 W JP2016077905 W JP 2016077905W WO 2017057155 A1 WO2017057155 A1 WO 2017057155A1
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- WO
- WIPO (PCT)
- Prior art keywords
- polishing
- abrasive grains
- acid
- polishing composition
- modified
- Prior art date
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- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- RKKOMEIYHHASIN-UHFFFAOYSA-N hydroperoxyboronic acid Chemical compound OOB(O)O RKKOMEIYHHASIN-UHFFFAOYSA-N 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 230000033444 hydroxylation Effects 0.000 description 1
- 238000005805 hydroxylation reaction Methods 0.000 description 1
- CUILPNURFADTPE-UHFFFAOYSA-N hypobromous acid Chemical compound BrO CUILPNURFADTPE-UHFFFAOYSA-N 0.000 description 1
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 1
- GEOVEUCEIQCBKH-UHFFFAOYSA-N hypoiodous acid Chemical compound IO GEOVEUCEIQCBKH-UHFFFAOYSA-N 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 150000002475 indoles Chemical class 0.000 description 1
- 125000003406 indolizinyl group Chemical class C=1(C=CN2C=CC=CC12)* 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- AWJUIBRHMBBTKR-UHFFFAOYSA-N iso-quinoline Natural products C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- RMIODHQZRUFFFF-UHFFFAOYSA-N methoxyacetic acid Chemical compound COCC(O)=O RMIODHQZRUFFFF-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 1
- BEGLCMHJXHIJLR-UHFFFAOYSA-N methylisothiazolinone Chemical compound CN1SC=CC1=O BEGLCMHJXHIJLR-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N n-hexanoic acid Natural products CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 150000002916 oxazoles Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical compound OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-N peroxydisulfuric acid Chemical compound OS(=O)(=O)OOS(O)(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-N 0.000 description 1
- 150000004968 peroxymonosulfuric acids Chemical class 0.000 description 1
- MPNNOLHYOHFJKL-UHFFFAOYSA-N peroxyphosphoric acid Chemical compound OOP(O)(O)=O MPNNOLHYOHFJKL-UHFFFAOYSA-N 0.000 description 1
- 229960005323 phenoxyethanol Drugs 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 150000003216 pyrazines Chemical class 0.000 description 1
- 150000003217 pyrazoles Chemical class 0.000 description 1
- 150000004892 pyridazines Chemical class 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- 238000002336 sorption--desorption measurement Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- UJJLJRQIPMGXEZ-UHFFFAOYSA-N tetrahydro-2-furoic acid Chemical compound OC(=O)C1CCCO1 UJJLJRQIPMGXEZ-UHFFFAOYSA-N 0.000 description 1
- UAXOELSVPTZZQG-UHFFFAOYSA-N tiglic acid Natural products CC(C)=C(C)C(O)=O UAXOELSVPTZZQG-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229920003169 water-soluble polymer Polymers 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
- H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Definitions
- the present invention relates to a polishing composition.
- CMP chemical mechanical polishing
- the CMP has been applied to each process in semiconductor manufacturing, and one aspect thereof is, for example, application to a gate formation process in transistor fabrication.
- materials such as metal, silicon, silicon oxide, polycrystalline silicon (polysilicon), and silicon nitride (silicon nitride) may be polished. There is a need to polish.
- Patent Document 1 In order to meet such demands, there is a technique in which the abrasive grains contained in the polishing composition are improved (Patent Document 1).
- the abrasive contained in the polishing composition disclosed in Patent Document 1 is colloidal silica in which an organic acid such as sulfonic acid or carboxylic acid is immobilized. It is disclosed that the polishing object disclosed in the document is polished at a high speed by including such abrasive grains in the polishing composition.
- Patent Document 1 shows that the object to be polished can be polished at a higher speed than that using ordinary colloidal silica in which no organic acid is immobilized.
- Patent Document 1 there is a demand for polishing at higher speed, and there is room for improvement in Patent Document 1 from the viewpoint of meeting that demand.
- an object of the present invention is to provide a polishing composition capable of polishing an object to be polished at a higher speed.
- a polishing composition used for polishing an object to be polished comprising surface-modified abrasive grains in which an ionic dispersant is directly modified on the surface of the abrasive grains, and a dispersion medium, the dispersion It has been found that the above problems can be solved by a polishing composition in which agglomeration of the abrasive grains is suppressed in a medium.
- X to Y indicating a range means “X or more and Y or less”.
- operations and physical properties are measured under conditions of room temperature (20 to 25 ° C.) / Relative humidity 40 to 50% RH.
- the present invention is a polishing composition used for polishing an object to be polished, comprising a surface-modified abrasive grain in which an ionic dispersant is directly modified on the surface of the abrasive grain, and a dispersion medium, It is a polishing composition in which aggregation of the abrasive grains is suppressed in a dispersion medium.
- the type of the polishing object is not particularly limited, but in a preferred embodiment of the present invention, the polishing object is a polishing object having a silicon-oxygen bond, a polishing object having a silicon-silicon bond, or silicon.
- a polishing object having a nitrogen bond is not particularly limited, but in a preferred embodiment of the present invention, the polishing object is a polishing object having a silicon-oxygen bond, a polishing object having a silicon-silicon bond, or silicon.
- a polishing object having a nitrogen bond is a polishing object having a silicon-oxygen bond, a polishing object having a silicon-silicon bond, or silicon.
- polishing objects having a silicon-oxygen bond examples include silicon oxide films, BD (black diamond: SiOCH), FSG (fluorosilicate glass), HSQ (hydrogen silsesquioxane), CYCLOTENE, SiLK, MSQ (Methyl silsesquioxane), and the like. Is mentioned.
- polishing objects having a silicon-silicon bond examples include polysilicon, amorphous silicon, single crystal silicon, n-type doped single crystal silicon, p-type doped single crystal silicon, and Si-based alloys such as SiGe.
- polishing object having a silicon-nitrogen bond examples include a silicon nitride film and SiCN (silicon carbonitride).
- a polishing object having a silicon-oxygen bond is particularly preferable from the viewpoint of improving the polishing rate and the versatility of the material itself.
- polishing composition Next, the polishing composition will be described.
- the polishing composition of the present invention includes surface-modified abrasive grains in which the surface of the abrasive grains is directly modified with an ionic dispersant, a dispersion medium, and other components as necessary.
- the surface-modified abrasive grains in which the ionic dispersant is directly modified on the surface of the abrasive grains As described above, in the polishing composition of the present invention, the surface-modified abrasive grains in which the surface of the abrasive grains is directly modified by the ionic dispersant (hereinafter, also simply referred to as “surface-modified abrasive grains”). Is included.
- the object to be polished can be made at a higher speed than that using ordinary colloidal silica to which no organic acid is immobilized. As a matter of course, it can be polished at a higher speed than those fixed with an organic acid.
- abrasive grains examples of the type of abrasive grains used in the polishing composition according to the present invention, in which the ionic dispersant is directly modified, include metal oxides such as silica, alumina, zirconia, and titania. These abrasive grains may be used alone or in combination of two or more. As the abrasive grains, commercially available products or synthetic products may be used.
- the type of abrasive grains is preferably silica, and more preferably colloidal silica.
- Examples of the method for producing colloidal silica include a sodium silicate method and a sol-gel method, and any colloidal silica produced by any production method can be suitably used as the abrasive grains of the present invention.
- colloidal silica produced by a sol-gel method that can be produced with high purity is preferred.
- the ionic dispersant means an agent having a functional group that is ionized in a dispersion medium (liquid temperature: 25 ° C.), and is preferably a polymer having a functional group that is ionized.
- ionic dispersants that are directly modified on the surface of the abrasive grains include polycarboxylic acids or derivatives thereof, polyamines or derivatives thereof, quaternary ammonium salt polymers, polyvinyl alcohol (PVA) or derivatives thereof, and the like. Be mentioned.
- polycarboxylic acid derivatives include polycarboxylic acid esters, polycarboxylic acid anhydrides, polycarboxylic acid amine salts, polycarboxylic acid ammonium salts, and polycarboxylic acid sodium salts.
- polycarboxylic acid ester include those having an aliphatic hydrocarbon or an aromatic hydrocarbon in the ester residue.
- polyacrylic acid or its derivative (s) it is preferable to use polyacrylic acid or its derivative (s).
- the polyacrylic acid or derivatives thereof include polyacrylic acid, polyacrylic acid ester, polyacrylic anhydride, polyacrylic acid amine salt, polyacrylic acid ammonium salt, and polyacrylic acid sodium salt.
- polyvinyl alcohol (PVA) derivatives include, for example, anion-modified PVA derivatives such as carboxylic acid-modified PVA, undecylenic acid-modified PVA, and sulfonic acid-modified PVA; ammonium-modified PVA, sulfonium-modified PVA, amino group-modified PVA, and the like And cation-modified PVA derivatives. Therefore, according to a preferred embodiment of the present invention, the ionic dispersant is polyvinyl alcohol or a derivative thereof, and according to a preferred embodiment of the present invention, the polyvinyl alcohol or derivative thereof is a cation-modified polyvinyl alcohol or a derivative thereof. Its derivatives.
- ionic dispersants can be used alone or in combination of two or more. Furthermore, as the ionic dispersant, a commercially available product may be used, or a synthetic product may be used.
- ionic dispersants include SN Dispersant 5027, 5468, 4215 (San Nopco Co., Ltd.); Gohsenx T series (T-350, T-330H, etc.), Gohsenx L series (L-3266, etc.) , Gosenex K series (K-434 etc.) (Nippon Synthetic Chemical Co., Ltd.), K polymer series (KL-506, KL-318, KL-118, KM-618, KM-118 etc.), C polymer series (C-506, CM-318, etc.) (above, manufactured by Kuraray Co., Ltd.). However, it is not limited to these, and various ionic dispersants can be used.
- the number average molecular weight of the ionic dispersant used for surface modification of the abrasive grains is not particularly limited, but is preferably 1000 to 50000, more preferably 1500 to 25000 from the viewpoint of dispersion stability. More preferably, it is 2000-15000.
- the measuring method of a number average molecular weight follows the method of an Example.
- the method for producing the surface-modified abrasive grains is not particularly limited as long as the ionic dispersant is directly modified on the surface of the abrasive grains, and preferably includes the following methods.
- the method for producing surface-modified abrasive grains includes (1) a first step of preparing an abrasive dispersion containing the abrasive grains; and (2) adjusting the abrasive dispersion to pH 7 to 9 to adjust the pH. A second step of preparing an adjusted dispersion; and (3) a third step of mixing the pH-adjusted dispersion and the ionic dispersant.
- the method of directly modifying the surface of the ionic dispersant on the surface of the abrasive grains makes it possible to easily produce abrasive grains that have been surface-modified as compared with the fixing of conventionally known organic acids to the abrasive grains.
- the following surface modifications of the abrasive grains using an organic acid are known. For example, if sulfonic acid, which is a kind of organic acid, is immobilized on colloidal silica, for example, “Sulphonic acid-functionalized silica through of thiol groups”, Chem. Commun. 246-247 (2003).
- a silane coupling agent having a thiol group such as 3-mercaptopropyltrimethoxysilane is coupled to colloidal silica and then oxidized with hydrogen peroxide to fix the sulfonic acid on the surface. Obtained colloidal silica is obtained.
- carboxylic acid which is a kind of organic acid, is immobilized on colloidal silica, for example, “Novel Silane Coupling Agents Containing a Photobolizable 2-Nitrobenzoyl Sterfotrophic Induction of CarbodisulfideCarbon Letters, 3, 228-229 (2000).
- a silane coupling agent containing a photoreactive 2-nitrobenzyl ester is coupled to colloidal silica and then irradiated with light to obtain colloidal silica having a carboxylic acid immobilized on the surface.
- the first step is a step of preparing an abrasive dispersion containing abrasive grains.
- This may be prepared by, for example, an abrasive dispersion prepared by a sodium silicate method or a sol-gel method as described above, in which abrasive grains are dispersed in a dispersion.
- the abrasive dispersion is preferably an aqueous dispersion of abrasive grains.
- the content of the abrasive grains is preferably 1 to 50 mass%, more preferably 5 to 35 mass%, with respect to the total mass of the abrasive dispersion.
- the second step is a step of adjusting the abrasive dispersion to pH 7-9. More preferably, the pH is adjusted to 7.0 to 9.0, and further preferably pH 7.5 to 8.5.
- any method may be used to adjust the pH to 7 to 9.
- the pH can be adjusted by mixing the pH adjusting agent and the abrasive dispersion.
- the reason for adjusting the pH to 7 to 9 is to ensure the dispersibility of the abrasive grains and to ensure the ionicity of the ionic dispersant.
- a pH adjuster to the said abrasive grain dispersion liquid. Therefore, it is preferable that the polishing composition of the present invention further contains a pH adjuster.
- the specific example of a pH adjuster is demonstrated below.
- the value of pH in this invention shall say the value measured on the conditions as described in an Example.
- the third step is a step of mixing the pH-adjusted dispersion and the ionic dispersant.
- This step is not particularly limited as long as it is a method capable of mixing the pH adjusted dispersion and the ionic dispersant, and the ionic dispersant may be added to the pH adjusted dispersion.
- the pH adjusted dispersion may be added to the ionic dispersant, or these may be combined.
- a method of adding the ionic dispersant to the pH adjusted dispersion is preferred.
- the addition rate is not particularly limited, and is preferably from 0.1 to 10 g / min, and more preferably from 0.5 to 5 g / min, from the viewpoint of suppressing aggregation.
- the amount of the ionic dispersant added is not particularly limited as long as the ionic dispersant can be directly modified on the surface of the abrasive grains, but from the viewpoint of more reliably modifying the surface of each abrasive grain.
- 1 g is preferably 0.0001 to 1 g, more preferably 0.001 to 0.5 g, still more preferably 0.005 to 0.1 g, and still more preferably 0.006 to 0 g. 0.05 g, particularly preferably 0.007 to 0.01 g.
- the temperature (liquid temperature) at this time is not particularly limited, but is preferably 10 to 60 ° C., more preferably 15 to 40 ° C. from the viewpoint of adsorption / desorption reaction of the ionic dispersant.
- stirring is preferably performed during and / or after the addition. Therefore, according to a preferred embodiment of the present invention, the third step is performed at 10 to 60 ° C. with stirring.
- the stirring speed is not particularly limited, but is preferably 100 to 600 rpm, more preferably 150 to 500 rpm.
- the time for mixing the pH-adjusted dispersion and the ionic dispersant is not particularly limited, but is preferably 5 to 300 minutes from the viewpoint of more reliably producing surface-modified abrasive grains. More preferably, it is ⁇ 120 minutes, and more preferably 30-80 minutes.
- the lower limit of the average primary particle diameter of the surface-modified abrasive grains in the polishing composition is preferably 5 nm or more, more preferably 7 nm or more, further preferably 10 nm or more, and 15 nm or more. Is more preferable, and it is particularly preferable that the thickness is 25 nm or more.
- the upper limit of the average primary particle size of the surface-modified abrasive grains is preferably 200 nm or less, more preferably 150 nm or less, further preferably 100 nm or less, and further preferably 70 nm or less. More preferably, it is 60 nm or less, and particularly preferably 50 nm or less.
- the average primary particle diameter of the surface modified abrasive is calculated based on, for example, SEM. This is also calculated in the embodiment of the present invention.
- the lower limit of the average secondary particle diameter of the surface-modified abrasive grains in the polishing composition is preferably 5 nm or more, more preferably 7 nm or more, further preferably 10 nm or more, and 26 nm or more. Is more preferably 36 nm or more, still more preferably 45 nm or more, and particularly preferably 55 nm or more.
- the upper limit of the average secondary particle diameter of the surface-modified abrasive grains is preferably 300 nm or less, more preferably 260 nm or less, further preferably 220 nm or less, and even more preferably 150 nm or less.
- it is 120 nm or less, more preferably 100 nm or less, and particularly preferably 80 nm or less. If it is such a range, it can suppress more that a surface defect arises on the surface of the grinding
- the secondary particles referred to here are particles formed by associating surface-modified abrasive grains in the polishing composition, and the average secondary particle diameter of the secondary particles is determined by, for example, a dynamic light scattering method. Can be measured. This is also calculated in the embodiment of the present invention.
- the lower limit of the ratio with the diameter D10 of the particles when reaching 10% of the mass is preferably 1.1 or more, and is 1.2 or more. Is more preferably 1.3 or more, and particularly preferably 1.4 or more.
- the upper limit of D90 / D10 is not particularly limited, but is preferably 5.0 or less, more preferably 3.0 or less, still more preferably 2.5 or less, and 2.0 More preferably, it is as follows.
- the lower limit of the total content (concentration) of the surface-modified abrasive grains in the polishing composition is preferably 0.002% by mass or more, and 0.02% by mass or more with respect to the total mass of the composition. More preferably, it is more preferably 0.1% by mass or more, still more preferably 1% by mass or more, and particularly preferably 3% by mass or more.
- the upper limit of the total content (concentration) of the surface-modified abrasive grains in the polishing composition is preferably 10% by mass or less, and 8% by mass or less with respect to the total mass of the composition. Is more preferable, and it is especially preferable that it is 7 mass% or less. Within such a range, a high polishing rate can be obtained while suppressing costs.
- the polishing composition according to the present invention contains a dispersion medium for dispersing each component.
- a dispersion medium for dispersing each component.
- water is preferable. From the viewpoint of suppressing the inhibition of the action of other components, water containing as little impurities as possible is preferable.
- pure water from which foreign matters are removed through a filter is used. Water, ultrapure water, or distilled water is preferred.
- the present invention is a polishing composition used for polishing an object to be polished, comprising a surface-modified abrasive grain in which an ionic dispersant is directly modified on the surface of the abrasive grain, and a dispersion medium, It is a polishing composition in which aggregation of the abrasive grains is suppressed in a dispersion medium.
- the object to be polished can be polished at high speed.
- the surface-modified abrasive grains have a structure in which the surface of the abrasive grains is directly modified with an ionic dispersant, the aggregation of the abrasive grains is suppressed in the dispersion medium.
- the ionic dispersant is appropriately modified on the surface of the abrasive grains in advance, the abrasive grains will quickly aggregate in the dispersion medium.
- the secondary particle size becomes large, or in some cases, the amount of abrasive grains that settle is excessively increased.
- the degree of “aggregation of abrasive grains is suppressed in the dispersion medium” is not particularly limited, but preferably, the abrasive grains (that is, the ionic dispersant is contained in the abrasive dispersion).
- the rate of change between the average secondary particle diameter of the abrasive grains before being directly modified on the surface) and the average secondary particle diameter of the surface-modified abrasive grains dispersed in the dispersion medium in the polishing composition is The rate of change is preferably 10% or less, more preferably 6% or less, still more preferably 4% or less, and particularly preferably 2% or less, when the latter is regarded as after the change.
- the average secondary particle diameter of an abrasive grain and a surface modification abrasive grain can be calculated by said method, respectively.
- the value before the change is 60 nm and the value after the change is 58.7 to 60.8 nm, so that it falls within this range.
- the rate of change being significantly low means that the dispersion state of the abrasive grains in the abrasive dispersion is maintained almost as it is in the polishing composition.
- the polishing composition according to the present invention is also an organic solvent for dissolving a pH adjuster, an oxidizer, a metal anticorrosive, an antiseptic, an antifungal agent, a water-soluble polymer, a poorly soluble organic substance, if necessary. And other components may be further included.
- a pH adjuster an oxidizing agent, a metal anticorrosive, an antiseptic, and an antifungal agent, will be described.
- the pH of the polishing composition is not particularly limited, but is preferably in the acidic region.
- the acidic region means that the pH is less than 7, and preferably 2 to 5. More preferably, the pH is 2.0 to 5.0, and still more preferably pH 2.1 to 3.0. Within such a range, the stability of the ionic dispersant can be improved, and unintended decomposition of the ionic dispersant can be suppressed.
- the object to be polished can be polished at high speed.
- the neutral region means pH 7.
- the basic region means a pH of more than 7, preferably a pH of 8-13.
- the value of pH in this invention shall say the value measured on the conditions as described in an Example.
- polishing composition contains a pH adjuster further.
- pH adjuster known acids, bases, or salts thereof can be used.
- specific examples of acids that can be used as pH adjusters include, for example, inorganic acids such as hydrochloric acid, sulfuric acid, nitric acid, hydrofluoric acid, boric acid, carbonic acid, hypophosphorous acid, phosphorous acid, and phosphoric acid, formic acid, and acetic acid.
- an inorganic acid When an inorganic acid is used as a pH adjuster, sulfuric acid, nitric acid, phosphoric acid, etc. are particularly preferable from the viewpoint of improving the polishing rate, and when an organic acid is used as a pH adjuster, glycolic acid, succinic acid, maleic acid, citric acid is used. Acid, tartaric acid, malic acid, gluconic acid, itaconic acid and the like are particularly preferable from the viewpoint of improving the polishing rate.
- Bases that can be used as pH adjusters include amines such as aliphatic amines and aromatic amines, organic bases such as quaternary ammonium hydroxide, hydroxides of alkali metals such as potassium hydroxide, and hydroxylation of group 2 elements. And ammonia and the like.
- pH adjusters nitric acid, potassium hydroxide, phosphoric acid, sulfuric acid, maleic acid, and sodium hydroxide are more preferable from the viewpoint of availability and improvement in polishing rate.
- the pH adjusters may be used alone or in combination of two or more.
- the addition amount of the pH adjusting agent is not particularly limited, and may be appropriately adjusted so that the polishing composition has a desired pH.
- the oxidizing agent that can be added to the polishing composition has an action of oxidizing the surface of the polishing object, and improves the polishing rate of the polishing object by the polishing composition.
- Usable oxidizing agents are hydrogen peroxide, sodium peroxide, barium peroxide, ozone water, silver (II) salt, iron (III) salt, permanganic acid, chromic acid, dichromic acid, peroxodisulfuric acid, peroxo Phosphoric acid, peroxosulfuric acid, peroxoboric acid, performic acid, peracetic acid, perbenzoic acid, perphthalic acid, hypochlorous acid, hypobromous acid, hypoiodous acid, chloric acid, chlorous acid, perchloric acid, Examples include bromic acid, iodic acid, periodic acid, persulfuric acid, dichloroisocyanuric acid, and salts thereof. These oxidizing agents may be used alone or in combination of two or more.
- the content of the oxidizing agent in the polishing composition is preferably 0.1 g / L or more, more preferably 1 g / L or more, and further preferably 3 g / L or more. As the content of the oxidizing agent increases, the polishing rate of the object to be polished by the polishing composition is further improved.
- the content of the oxidizing agent in the polishing composition is also preferably 200 g / L or less, more preferably 100 g / L or less, and further preferably 40 g / L or less.
- the content of the oxidizing agent decreases, the material cost of the polishing composition can be reduced, and the load on the processing of the polishing composition after polishing, that is, the waste liquid treatment can be reduced.
- the possibility of excessive oxidation of the surface of the object to be polished by the oxidizing agent can be reduced.
- Metal anticorrosive By adding a metal anticorrosive to the polishing composition, it is possible to further suppress the formation of a dent on the side of the wiring in the polishing using the polishing composition. Moreover, it can suppress more that dishing arises on the surface of the grinding
- the metal anticorrosive that can be used is not particularly limited, but is preferably a heterocyclic compound or a surfactant.
- the number of heterocyclic rings in the heterocyclic compound is not particularly limited.
- the heterocyclic compound may be a monocyclic compound or a polycyclic compound having a condensed ring.
- These metal anticorrosives may be used alone or in combination of two or more.
- a commercially available product or a synthetic product may be used as the metal anticorrosive.
- isoindole compound indazole compound, purine compound, quinolidine compound, quinoline compound, isoquinoline compound, naphthyridine compound, phthalazine compound, quinoxaline compound, quinazoline compound, cinnoline compound, buteridine compound, thiazole compound, isothiazole compound, oxazole compound, iso Examples thereof include nitrogen-containing heterocyclic compounds such as oxazole compounds and furazane compounds.
- antiseptics and fungicides examples include isothiazoline-based antiseptics such as 2-methyl-4-isothiazolin-3-one and 5-chloro-2-methyl-4-isothiazolin-3-one, Paraoxybenzoates, phenoxyethanol and the like can be mentioned. These antiseptics and fungicides may be used alone or in combination of two or more.
- the polishing rate of the object to be polished is preferably more than 188 [ ⁇ / min], more preferably 200 [ ⁇ / min] or more, and still more preferably. It is 240 [ ⁇ / min] or more, and more preferably 500 [ ⁇ / min] or more.
- the mixing method is not particularly limited.
- the surface-modified abrasive grains in which the surface of the abrasive grains is directly modified with an ionic dispersant and, if necessary, other components are stirred in a dispersion medium. What is necessary is just to mix. If the surface-modified abrasive grains are prepared in advance, the order of addition with other components is not particularly limited, and the polishing composition can be produced in a state where the aggregation of the abrasive grains is suppressed. .
- the temperature at the time of mixing each component is not particularly limited, but is preferably 10 to 40 ° C., and may be heated to increase the dissolution rate. Further, the mixing time is not particularly limited.
- a polishing method in which a polishing composition is obtained by using the above polishing composition or by the above production method, and the polishing object is polished using the polishing composition.
- a polishing apparatus As a polishing apparatus, a general holder having a polishing surface plate on which a holder for holding a substrate having a polishing object and a motor capable of changing the number of rotations are attached and a polishing pad (polishing cloth) can be attached.
- a polishing apparatus can be used.
- polishing pad a general nonwoven fabric, polyurethane, porous fluororesin, or the like can be used without particular limitation. It is preferable that the polishing pad is grooved so that the polishing liquid accumulates.
- the polishing conditions are not particularly limited, and for example, the rotation speeds of the polishing surface plate and the head are preferably independently 10 to 500 rpm, and the pressure applied to the substrate having the object to be polished (polishing pressure) is 0.5 ⁇ 10 psi is preferred.
- the method of supplying the polishing composition to the polishing pad is not particularly limited, and for example, a method of continuously supplying with a pump or the like is employed. Although the supply amount is not limited, it is preferable that the surface of the polishing pad is always covered with the polishing composition of the present invention.
- the polishing composition according to the present invention may be a one-component type, or may be a multi-component type including a two-component type in which a part or all of the polishing composition is mixed at an arbitrary mixing ratio. Good. Further, when a polishing apparatus having a plurality of polishing composition supply paths is used, two or more polishing compositions adjusted in advance so that the polishing composition is mixed on the polishing apparatus may be used. Good.
- the polishing composition according to the present invention may be in the form of a stock solution, or may be prepared by diluting the stock solution of the polishing composition with water.
- the polishing composition is a two-pack type, the order of mixing and dilution is arbitrary. For example, when one composition is diluted with water and then mixed, or when diluted with water simultaneously with mixing Moreover, the case where the mixed polishing composition is diluted with water is mentioned.
- Example 1 By adding the additives shown in Table 1 to abrasive grains (colloidal silica; average primary particle size: 30 nm, average secondary particle size: 60 nm, D90 / D10: 2.01), ions are formed on the surface of the abrasive grains. Surface-modified abrasive grains directly modified by the functional dispersant were prepared.
- aqueous dispersion of abrasive grains in which the abrasive grains are dispersed was prepared.
- a pH adjuster maleic acid
- an aqueous dispersion of abrasive grains with a pH of 8.0 was prepared and used as a pH-adjusted dispersion liquid.
- the additive (ionic dispersant) shown in Table 1 was added to the pH-adjusted dispersion at a rate of 1 g / min for 5 minutes at a liquid temperature of 25 ° C. Added. While maintaining the liquid temperature of 25 ° C., the stirring state was maintained for 1 hour to produce surface-modified abrasive grains in which the ionic dispersant was directly modified on the surface of the abrasive grains.
- the surface-modified abrasive grains prepared above and maleic acid as a pH adjuster are adjusted so that the concentration of the surface-modified abrasive grains is 5% by mass and the pH is 2.1.
- a polishing composition was prepared by mixing in a dispersion medium (pure water) (mixing temperature: about 25 ° C., mixing time: about 10 minutes).
- a dispersion medium pure water
- the order of mixing the surface-modified abrasive grains and other components such as a pH adjuster is not limited.
- the pH of the polishing composition (liquid temperature: 25 ° C.) was confirmed with a pH meter (manufactured by Horiba, Ltd., model number: LAQUA).
- the number average molecular weight (Mn) of the additive shown in Table 1 employs a value in terms of polystyrene measured by GPC (gel permeation chromatography) method.
- Example 2 to 5 A polishing composition was prepared in the same manner as in Example 1 except that the type of additive and the number average molecular weight were changed to those shown in Table 1.
- Example 1 A polishing composition was prepared in the same manner as in Example 1 except that the surface-modified abrasive grains were changed to abrasive grains having sulfonic acid fixed on the surface.
- Example 3 A polishing composition was prepared in the same manner as in Example 1 except that the abrasive grains, the additive, and the pH adjuster were simultaneously mixed in the dispersion medium.
- a polishing composition was prepared in the same manner as in Example 4 except that abrasive grains, an additive, and a pH adjuster were simultaneously mixed in a dispersion medium.
- polishing rate (polishing rate): RR (Removal Rate)
- RR Removal Rate
- Polishing machine Mirra-200mm polishing machine (Applied Materials, AMAT) Polishing pad: Polyurethane pad (IC1010: manufactured by Rohm and Haas) Pressure: 1.5 psi Platen (plate) rotation speed: 60rpm Head (carrier) rotation speed: 60 rpm Flow rate of polishing composition: 200 ml / min Polishing time: 60 sec (Calculation method of polishing rate) The polishing rate (polishing rate) was calculated by the following formula.
- the film thickness was evaluated by determining with a light interference type film thickness measuring device (model number: ASET manufactured by KLA Tencor (KLA) Co., Ltd.) and dividing the difference by the polishing time.
- the measurement result of the polishing rate (RR) is shown in Table 1 below.
- the polishing compositions of Examples 1 to 5 use surface-modified abrasive grains in which the ionic dispersant is directly modified on the surface of the abrasive grains. It is shown that the object to be polished (wafer with silicon oxide film) can be polished at high speed.
- a specific configuration of the present invention that is, a polishing composition used for polishing an object to be polished, which is a surface-modified abrasive in which an ionic dispersant is directly modified on the surface of an abrasive grain
- Abrasive grains in which an organic acid such as sulfonic acid or carboxylic acid is fixed by a polishing composition that includes grains and a dispersion medium and in which the aggregation of the abrasive grains is suppressed in the dispersion medium are used. It has been able to meet the demand for polishing at higher speeds that could not be achieved with the polishing composition.
- the specific configuration of the present invention (the ionic dispersant is directly modified on the surface of the abrasive grains) is significantly different from the configuration in which the ionic dispersant is simply contained in the polishing composition. In the latter configuration, it is not possible to meet the demand for polishing the object to be polished at high speed.
- the present invention is characterized in that it does not use conventional abrasive grains fixed with an organic acid such as sulfonic acid or carboxylic acid, and uses abrasive grains whose surface is intentionally modified to be used as a dispersant. Have. By doing so, although the mechanism is not clear as described above, the polishing rate is improved as compared with the case of using abrasive grains fixed with organic acids such as sulfonic acid and carboxylic acid as in the past. be able to.
- the cost can be suppressed and desired abrasive grains can be designed freely. . From this viewpoint, it can be said that the present invention is very excellent.
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Abstract
Description
まず、本発明における、研磨対象物について説明する。
次に、研磨用組成物について説明する。
上記のように、本発明の研磨用組成物には、砥粒の表面にイオン性分散剤が直接修飾している表面修飾砥粒(本明細書中、単に「表面修飾砥粒」とも称する)が含まれる。かかる表面修飾砥粒を研磨用組成物に含ませて、研磨対象物を研磨することによって、有機酸が固定化されていない通常のコロイダルシリカを使ったものと比較して、研磨対象物を高速で研磨できることはもちろんのこと、有機酸で固定化されているものと比べても、さらに高速で研磨することができる。
本発明に係る研磨用組成物で用いられる、イオン性分散剤が直接修飾される、砥粒の種類としては、例えば、シリカ、アルミナ、ジルコニア、チタニア等の金属酸化物が挙げられる。該砥粒は、単独でもよいしまたは2種以上組み合わせても用いることができる。該砥粒は、それぞれ市販品を用いてもよいし合成品を用いてもよい。
イオン性分散剤とは、分散媒中(液温25℃)でイオン化する官能基を有する剤を意味し、好ましくはイオン化する官能基を有する高分子である。
表面修飾砥粒の作製方法は、砥粒の表面にイオン性分散剤が直接修飾される方法であれば特に制限されないが、好適には以下の方法がある。
第1工程は、砥粒を含む、砥粒分散液を準備する工程である。これは、例えば、上記のような、ケイ酸ソーダ法、ゾルゲル法によって作製された、砥粒が分散液に分散している砥粒分散液を準備してもよい。あるいは、市販品があるなら、それを購入してもよい。なお、砥粒分散液は、砥粒の水分散液であることがよい。この際の砥粒の含有量は、砥粒分散液の全質量に対し、1~50質量%であることが好ましく、5~35質量%であることがより好ましい。
第2工程は、前記砥粒分散液を、pH7~9に調整する工程である。より好ましくはpH7.0~9.0に調整し、さらに好ましくはpH7.5~8.5に調整する。
第3工程は、前記pH調整済分散液と、前記イオン性分散剤とを混合する工程である。
本発明に係る研磨用組成物は、各成分を分散するための分散媒を含む。分散媒としては水が好ましい。他の成分の作用を阻害することを抑制するという観点から、不純物をできる限り含有しない水が好ましく、具体的には、イオン交換樹脂にて不純物イオンを除去した後、フィルタを通して異物を除去した純水や超純水、または蒸留水が好ましい。
本発明は、研磨対象物を研磨するために用いられる研磨用組成物であって、砥粒の表面にイオン性分散剤が直接修飾している表面修飾砥粒と、分散媒とを含み、前記分散媒中で、前記砥粒の凝集が抑制されている、研磨用組成物である。本発明では、このように、分散媒中で、砥粒の凝集が抑制されているため、研磨対象物を高速で研磨できる。
本発明に係る研磨用組成物はまた、必要に応じて、pH調整剤、酸化剤、金属防食剤、防腐剤、防カビ剤、水溶性高分子、難溶性の有機物を溶解するための有機溶媒等の他の成分をさらに含んでもよい。以下、好ましい他の成分である、pH調整剤、酸化剤、金属防食剤、防腐剤、および防カビ剤について説明する。
本発明の好ましい形態において、研磨用組成物のpHに特に制限はないが、酸性領域にあることが好ましい。ここで、本発明において酸性領域とは、pHが7未満を意味し、好ましくはpH2~5である。より好ましくはpH2.0~5.0であり、さらに好ましくはpH2.1~3.0である。かような範囲であれば、イオン性分散剤の安定性を向上させることができ、またイオン性分散剤の意図しない分解を抑制することができる。また、研磨対象物を高速で研磨することができる。なお、本発明において中性領域とは、pH7を意味する。また、本発明において塩基性領域とは、pH7超を意味し、好ましくはpH8~13である。なお、本発明におけるpHの値は、実施例に記載の条件で測定した値を言うものとする。
研磨用組成物に添加し得る酸化剤は、研磨対象物の表面を酸化する作用を有し、研磨用組成物による研磨対象物の研磨速度を向上させる。
研磨用組成物中に金属防食剤を加えることにより、研磨用組成物を用いた研磨で配線の脇に凹みが生じるのをより抑えることができる。また、研磨用組成物を用いて研磨した後の研磨対象物の表面にディッシングが生じるのをより抑えることができる。
本発明で用いられる防腐剤および防カビ剤としては、例えば、2-メチル-4-イソチアゾリン-3-オンや5-クロロ-2-メチル-4-イソチアゾリン-3-オン等のイソチアゾリン系防腐剤、パラオキシ安息香酸エステル類、およびフェノキシエタノール等が挙げられる。これら防腐剤および防カビ剤は、単独でもまたは2種以上混合して用いてもよい。
本発明においては、研磨対象物を研磨するために用いられる研磨用組成物の製造方法であって、砥粒の表面にイオン性分散剤が直接修飾している表面修飾砥粒と、分散媒と、を混合することを有する、製造方法が提供される。このような方法によって、本発明の研磨用組成物を効率よく作製することができる。
本発明においては、上記の研磨用組成物を用いて、または、上記の製造方法によって研磨用組成物を得、それを用いて、研磨対象物を研磨する、研磨方法が提供される。
砥粒(コロイダルシリカ;平均一次粒子径:30nm、平均二次粒子径:60nm、D90/D10:2.01)に、表1に示される添加剤を添加することによって、砥粒の表面にイオン性分散剤が直接修飾している表面修飾砥粒を作製した。
添加剤の種類、数平均分子量を、表1に示されるものに変更した以外は、実施例1と同様にして研磨用組成物を作製した。
表面修飾砥粒を、表面にスルホン酸が固定されている砥粒に変更した以外は、実施例1と同様にして研磨用組成物を作製した。
添加剤を使用しなかった以外は、実施例1と同様にして研磨用組成物を作製した。
砥粒と、添加剤と、pH調整剤とを、分散媒に同時に混合した以外は、実施例1と同様にして研磨用組成物を作製した。
砥粒と、添加剤と、pH調整剤とを、分散媒に同時に混合した以外は、実施例4と同様にして研磨用組成物を作製した。
上記で得られた各研磨用組成物を用いて、研磨用対象物(酸化ケイ素膜つきウェーハ)を以下の研磨条件で研磨した際の研磨速度を測定した。
研磨機:Mirra-200mm研磨機(アプライドマテリアルズ社製:AMAT)
研磨パッド:ポリウレタン製パッド(IC1010:ロームアンドハース社製)
圧力:1.5psi
プラテン(定盤)回転数:60rpm
ヘッド(キャリア)回転数:60rpm
研磨用組成物の流量:200ml/min
研磨時間:60sec
(研磨レートの算出方法)
研磨レート(研磨速度)は、以下の式により計算した。
実施例の研磨用組成物中の表面修飾砥粒と、比較例の研磨用組成物中の砥粒の平均粒径(平均二次粒子径)を、動的光散乱式粒子分布測定装置:UPA(日機装社製)を用いて、測定した。結果を表1に示す。
表1より明らかなように、実施例1~5の研磨用組成物は、砥粒の表面にイオン性分散剤が直接修飾している表面修飾砥粒を用いているため、砥粒の沈降を抑制し、研磨用対象物(酸化ケイ素膜つきウェーハ)を高速で研磨することができることが示されている。
Claims (11)
- 研磨対象物を研磨するために用いられる研磨用組成物であって、
砥粒の表面にイオン性分散剤が直接修飾している表面修飾砥粒と、分散媒とを含み、
前記分散媒中で、前記砥粒の凝集が抑制されている、研磨用組成物。 - 前記イオン性分散剤が、ポリビニルアルコールもしくはその誘導体である、請求項1に記載の研磨用組成物。
- 前記ポリビニルアルコールもしくはその誘導体が、カチオン変性ポリビニルアルコールもしくはその誘導体である、請求項2に記載の研磨用組成物。
- 前記研磨対象物が、ケイ素-酸素結合を有する研磨対象物、ケイ素-ケイ素結合を有する研磨対象物またはケイ素-窒素結合を有する研磨対象物である、請求項1~3のいずれか1項に記載の研磨用組成物。
- 前記研磨対象物が、ケイ素-酸素結合を有する研磨対象物である、請求項4に記載の研磨用組成物。
- pH調整剤をさらに含む、請求項1~5のいずれか1項に記載の研磨用組成物。
- pH2~5である、請求項1~6のいずれか1項に記載の研磨用組成物。
- 研磨対象物を研磨するために用いられる研磨用組成物の製造方法であって、
砥粒の表面にイオン性分散剤が直接修飾している表面修飾砥粒と、
分散媒と、
を混合することを有する、製造方法。 - 前記表面修飾砥粒が、
前記砥粒を含む、砥粒分散液を準備する第1工程と;
前記砥粒分散液を、pH7~9に調整し、pH調整済分散液を作製する第2工程と;
前記pH調整済分散液と、前記イオン性分散剤とを混合する第3工程と;
を有して作製される、請求項8に記載の製造方法。 - 前記第3工程が、10~60℃で、攪拌にて行われる、請求項9に記載の製造方法。
- 請求項1~7のいずれか1項に記載の研磨用組成物を用いて、または
請求項8~10のいずれか1項に記載の製造方法によって研磨用組成物を得、当該研磨用組成物を用いて、研磨対象物を研磨する、研磨方法。
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