WO2017049788A1 - 阵列基板及其制作方法 - Google Patents

阵列基板及其制作方法 Download PDF

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WO2017049788A1
WO2017049788A1 PCT/CN2015/098341 CN2015098341W WO2017049788A1 WO 2017049788 A1 WO2017049788 A1 WO 2017049788A1 CN 2015098341 W CN2015098341 W CN 2015098341W WO 2017049788 A1 WO2017049788 A1 WO 2017049788A1
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layer
quantum dot
filter layer
array substrate
protective filter
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PCT/CN2015/098341
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English (en)
French (fr)
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程小平
李泳锐
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深圳市华星光电技术有限公司
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Priority to US14/914,619 priority Critical patent/US10007156B2/en
Publication of WO2017049788A1 publication Critical patent/WO2017049788A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133617—Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/08—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 light absorbing layer
    • G02F2201/086—UV absorbing
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/50—Protective arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/36—Micro- or nanomaterials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1292—Multistep manufacturing methods using liquid deposition, e.g. printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an array substrate and a method of fabricating the same.
  • Liquid crystal display has many advantages such as thin body, power saving, and no radiation, and has been widely used. Such as: LCD TV, mobile phone, personal digital assistant (PDA), digital camera, computer screen or laptop screen.
  • a liquid crystal display device includes a housing, a liquid crystal display panel disposed in the housing, and a backlight module disposed in the housing.
  • the structure of the liquid crystal display panel is mainly composed of a Thin Film Transistor Array Substrate (TFT Array Substrate), a color filter substrate (Color Filter, CF), and a liquid crystal layer disposed between the two substrates ( Liquid Crystal Layer) is constructed by controlling the rotation of the liquid crystal molecules of the liquid crystal layer by applying a driving voltage on the two glass substrates, and refracting the light of the backlight module to produce a picture.
  • TFT Array Substrate Thin Film Transistor Array Substrate
  • Color Filter Color Filter
  • CF color filter substrate
  • Liquid Crystal Layer Liquid Crystal Layer
  • Quantum dots are semiconductor nanocrystals with a radius less than or close to the Bohr radius, and most of the three-dimensional size nanomaterials composed of II-VI or III-V elements. Due to the quantum confinement effect, the transport of electrons and holes inside is limited, so that the continuous band structure becomes a separate energy level structure. When the size of quantum dots is different, the quantum confinement of electrons and holes is different, and the discrete energy levels are different. After being excited by external energy, quantum dots of different sizes emit light of different wavelengths, that is, light of various colors.
  • the advantage of the quantum dot is that by adjusting the size of the quantum dot, the wavelength range of the light can be covered to the infrared and the entire visible light band, and the emitted light band is narrow, the color saturation is high; the quantum dot material has high quantum conversion efficiency; the material property is stable; The method is simple and diverse, can be prepared from a solution, and is rich in resources. Quantum dots absorb short-wave blue light and are excited to exhibit long-wavelength light color. This feature allows quantum dots to change the color of light emitted by the backlight.
  • the existing liquid crystal display panel converts the white light emitted by the light source into red, green and blue respectively by the filtering action of the color filter layer such as the red filter layer, the green filter layer and the blue filter layer disposed therein.
  • the monochromatic light, the color filter layers of different colors respectively transmit the light of the corresponding color band, thereby realizing the color display of the liquid crystal display panel.
  • people hope to continuously increase the color saturation and color gamut of the liquid crystal display panel. If it is necessary to expand the color gamut of the liquid crystal display panel, the color purity of the color filter layer must be improved, and the content of the pigment must be made. Increase, this will reduce the light transmittance of the color filter layer, in order to ensure the display brightness of the liquid crystal display panel, it is also required Increasing the light output intensity of the light source leads to an increase in power consumption of the liquid crystal display panel.
  • Quantum dot display technology has been fully upgraded in various dimensions such as color gamut coverage, color control accuracy, red, green and blue color purity. It has revolutionized the realization of full color gamut display, which can restore the image color most realistically and is regarded as a global display.
  • the traditional quantum dot display technology is implemented by directly introducing quantum dots into two substrates of a liquid crystal display panel (ie, in a liquid crystal cell) to compensate for the lack of color development of the existing color filter layer and to expand the display color thereof. Domain scope.
  • the process conditions of the existing liquid crystal display panel affect the quantum dot efficiency. How to further improve the stability of quantum dots is a problem to be considered.
  • An object of the present invention is to provide an array substrate, which is provided with a quantum dot layer and a protective filter layer on the array substrate to compensate for the lack of color development of the existing color filter layer, and to expand the display color gamut range while solving the existing The problem of poor quantum dot efficiency and poor stability in technology.
  • Another object of the present invention is to provide a method for fabricating an array substrate, which can easily and conveniently fabricate a quantum dot layer and a protective filter layer on an array substrate to compensate for the lack of color development of the existing color filter layer.
  • the display color gamut range is enlarged, and the problems of poor quantum dot efficiency and poor stability in the prior art are solved.
  • the present invention provides an array substrate comprising: a substrate, a TFT layer disposed on the substrate, a quantum dot layer disposed on the TFT layer, and a quantum dot layer disposed on the quantum dot layer Protective filter layer;
  • the protective filter layer can form a dense protection for the quantum dot layer, and the protective filter layer also has a filtering effect, and the protective filter layer can filter a certain wavelength of ultraviolet light or blue light.
  • the quantum dots of the quantum dot layer include a semiconductor composed of a IIB-VIA element, a semiconductor composed of a IIIA-VA element, and one or more of carbon quantum dots, and the quantum dots are nanometers having a stable diameter of 0-20 nm. particle.
  • the luminescent color of the quantum dot layer is a combination of one or more of red, green, blue, yellow, and purple.
  • the material of the protective filter layer is silicon nitride, silicon oxide, indium tin oxide, polyimide, or polyfluorene derivative.
  • a color filter layer is further disposed on the protective filter layer.
  • the invention also provides a method for fabricating an array substrate, comprising the following steps:
  • Step 1 Providing a substrate, and forming a TFT layer on the substrate;
  • Step 2 forming a quantum dot layer on the TFT layer
  • Step 3 Create a protective filter layer on the quantum dot layer.
  • a quantum dot film is formed on the TFT layer by a vapor deposition method to obtain a quantum dot layer.
  • the step 2 is specifically to provide a quantum dot material and a dissolving medium, dissolving and dispersing the quantum dot material into the dissolving medium, mixing uniformly, preparing a quantum dot, and bonding the quantum dot to the TFT layer.
  • the film was formed on the film, and after drying and solidification, a quantum dot layer was obtained.
  • the quantum dot material in the step 2 is oil-soluble or water-soluble; the quantum dot form is spherical, or rod-shaped, or fibrous; the dissolution medium is silica gel or epoxy; the step 2 is passed
  • the quantum dot is formed into a film on the TFT layer by spraying, spin coating, printing, or slit coating.
  • the method for fabricating the array substrate further includes:
  • Step 4 forming a color filter layer on the protective layer.
  • the present invention also provides an array substrate, comprising: a substrate, a TFT layer disposed on the substrate, a quantum dot layer disposed on the TFT layer, and a protective filter layer disposed on the quantum dot layer;
  • the protective filter layer can form a dense protection for the quantum dot layer, and the protective filter layer further has a filtering effect, and the protective filter layer can filter a certain wavelength of ultraviolet light or blue light;
  • the quantum dots of the quantum dot layer comprise a semiconductor composed of a IIB-VIA element, a semiconductor composed of a IIIA-VA element, and one or more of carbon quantum dots having a stable diameter of 0-20 nm.
  • the luminescent color of the quantum dot layer is a combination of one or more of red, green, blue, yellow, and purple;
  • the material of the protective filter layer is silicon nitride, silicon oxide, indium tin oxide, polyimide, or polyfluorene derivative.
  • the invention provides an array substrate, wherein the array substrate is provided with a quantum dot layer, and a quantum filter layer is further provided with a protective filter layer, which can improve color saturation and color purity through the quantum dot layer.
  • the filter layer can also function as a filter, that is, preventing the UV backlight or the laser backlight from transmitting light in the remaining unexcited backlight after the quantum dot is excited, thereby improving the efficiency and stability of the quantum dot layer;
  • the invention also provides a method for fabricating an array substrate, which is simple and easy to implement, and makes the quantum dot layer on the array substrate, which makes up for the deficiency of the existing color filter layer in color development, and expands the display color gamut range.
  • FIG. 1 is a schematic structural view of a first embodiment of an array substrate of the present invention
  • FIG. 2 is a schematic structural view of a display panel using the array substrate shown in FIG. 1;
  • FIG. 3 is a schematic structural view of a second embodiment of the array substrate of the present invention.
  • FIG. 4 is a schematic structural view of a display panel using the array substrate shown in FIG. 3;
  • Figure 5 is a breakthrough spectrum of a polyimide material film
  • FIG. 6 is a flow chart of a method of fabricating an array substrate of the present invention.
  • the present invention firstly provides an array substrate, comprising: a substrate 1 , a TFT layer 2 disposed on the substrate 1 , a quantum dot layer 3 disposed on the TFT layer 2 , and a protective filter layer 4 on the quantum dot layer 3;
  • the quantum dots of the quantum dot layer 3 are semiconductors including elements of IIB-VIA (such as cadmium sulfide (CdS), cadmium selenide (CdSe), cadmium telluride (CdTe), or zinc selenide (ZnSe).
  • elements of IIB-VIA such as cadmium sulfide (CdS), cadmium selenide (CdSe), cadmium telluride (CdTe), or zinc selenide (ZnSe).
  • IIIA-VA elements such as indium phosphide (InP), or indium arsenide (InAs)
  • other quantum dot materials such as carbon quantum dots, whose stable diameter is 0 to 20 nm nanoparticles.
  • the luminescent color of the quantum dot layer 3 includes, but is not limited to, a combination of one or more of red, green, blue, yellow, and purple.
  • the quantum dot layer 3 may be a film layer formed by mixing monochromatic quantum dots or polychromatic quantum dots on a whole surface, or may be a pixel pattern formed by a monochrome process of a monochromatic quantum dot or a multicolor quantum dot.
  • the film layer may be selected from inorganic materials such as silicon nitride (SiNx), silicon oxide (SiO2), indium tin oxide (ITO), or polyimide (PI), and polyfluorene derivative. Organic materials such as PFN.
  • the above materials have a filtering effect, which can cut off short-wave ultraviolet light or blue light, has good filtering effect on short-wave ultraviolet light or blue light, and has good penetration effect on long-wave visible light, and can adjust its molecular weight.
  • the structure is used to enhance the filtering effect.
  • the polyimide film has a high light transmittance at a wavelength of 380 to 780 nm, and the transmittance of short-wave light having a wavelength of less than 380 nm is urgent. The drama has dropped, and it has a good filtering effect on short-wave ultraviolet light.
  • the protective filter layer 4 can form a dense protection for the quantum dot layer 3, preventing damage to the quantum dot layer 3 by subsequent processes (for example, a development process of a color filter layer and a water washing process), and preventing the quantum dot in the glue. Impurities entering the liquid crystal layer affect the display effect.
  • the protective filter layer 4 also has a filtering effect, it is possible to prevent the UV backlight or the laser backlight from transmitting light in the unexcited backlight after the excitation quantum dots emit light;
  • the illumination color of 3 is red light and green light, and the backlight emitted by the backlight module is blue light.
  • setting the protection filter layer 4 to filter blue light can prevent the blue light emitted by the backlight module from exciting the quantum dots. After the layer 3 emits light, the remaining unexcited blue light penetrates the protective filter layer 4, thereby improving the luminous efficiency of the quantum dot layer 3, while the protective filter layer 4 allows red or green light to penetrate for color display.
  • a display panel is formed; the display panel may be a COA (Color Filter On Array) type panel or a non-COA type panel;
  • the driving mode of the display panel is not limited, and is used in various modes such as IPS, TN, VA, OLED, and QLED.
  • the display panel is a non-COA type panel, and the color filter layer 5 is disposed on the upper substrate 6 of the package cover.
  • the display panel shown in FIG. 4 is a COA type panel, and the color filter layer 5 is disposed on the protective filter layer 4 of the array substrate.
  • the present invention further provides a method for fabricating an array substrate, comprising the following steps:
  • Step 1 A substrate 1 is provided, and a TFT layer 2 is formed on the substrate 1.
  • the substrate 1 is a transparent substrate, preferably a glass substrate
  • the TFT layer 2 includes a plurality of thin film transistor units arranged in an array, and pixel electrodes connected to the thin film transistor unit.
  • Step 2 forming a quantum dot layer 3 on the TFT layer 2;
  • the step 2 is: providing a quantum dot material and a dissolving medium, dissolving and dispersing the quantum dot material into the dissolving medium, mixing uniformly, preparing a quantum dot glue, and bonding the quantum dot to the Forming a film on the TFT layer 2, drying and solidifying, to obtain a quantum dot layer 3;
  • the quantum dot material provided in the step 2 can be obtained by a modification treatment method of various undefined quantum dots such as surface grafting or surface coating to make it compatible with a dissolution medium, which may be oil-soluble or may be Water-soluble; the quantum dot shape of the quantum dot material may be any suitable form such as a spherical shape, a rod shape, or a fibrous shape; the dissolution medium may be selected from a dissolution medium system such as a silica gel system or an epoxy system, and may be specifically selected according to a practically selected quantum.
  • a dissolution medium which may be oil-soluble or may be Water-soluble
  • the quantum dot shape of the quantum dot material may be any suitable form such as a spherical shape, a rod shape, or a fibrous shape
  • the dissolution medium may be selected from a dissolution medium system such as a silica gel system or an epoxy system, and may be specifically selected according to a practically selected quantum.
  • the luminescent properties and solubility characteristics of the dots The characteristics are selected, wherein the ratio of each component and the mixing ratio with the quantum dots can be adjusted according to the mixing effect to achieve an optimal mixing effect; in step 2, the quantum dot glue is formed on the TFT layer 2 to form a film.
  • the method is spray, spin coating, printing, or slit coating.
  • the quantum dot layer 3 may also form a quantum dot film on the TFT layer 2 by evaporation;
  • the quantum dot layer 3 may be a film layer formed by mixing monochromatic quantum dots or multi-color quantum dots on a whole surface, or may be a pixel formed by a monochromatic quantum dot or a multi-color quantum dot through a patterning process. A patterned film layer; if the quantum dot layer 3 is a patterned film layer, a corresponding patterning step needs to be added in the step 2.
  • Step 3 A protective filter layer 4 is formed on the quantum dot layer 3.
  • the material of the protective filter layer 4 may be selected from inorganic materials such as silicon nitride (SiNx), silicon oxide (SiO2), and indium tin oxide (ITO), or polyimide (PI), and polyfluorene.
  • Organic materials such as derivatives (PFN). All of the above materials have a filtering effect, which can cut off short-wave ultraviolet light or blue light, has good filtering effect on short-wave ultraviolet light or blue light, and has good penetration effect on long-wave visible light, and can adjust its molecular weight. The structure enhances the filtering effect. As shown in FIG.
  • the polyimide film has a high light transmittance at a wavelength of 380 to 780 nm, and the transmittance of short-wave light having a wavelength of less than 380 nm sharply decreases, and has a short-wavelength ultraviolet light. Better filtering effect.
  • the protective filter layer 4 can form a dense protection for the quantum dot layer 3, preventing damage to the quantum dot layer 3 by subsequent processes (for example, a development process of a color filter layer and a water washing process), and preventing the quantum dot in the glue. Impurities entering the liquid crystal layer affect the display effect.
  • the protective filter layer 4 also has a filtering effect, it is possible to prevent the UV backlight or the laser backlight from transmitting light in the unexcited backlight after the excitation quantum dots emit light;
  • the illumination color of 3 is red light and green light, and the backlight emitted by the backlight module is blue light.
  • setting the protection filter layer 4 to filter blue light can prevent the blue light emitted by the backlight module from exciting the quantum dots. After the layer 3 emits light, the remaining unexcited blue light penetrates the protective filter layer 4, thereby improving the luminous efficiency of the quantum dot layer 3, while the protective filter layer 4 allows red or green light to penetrate for color display.
  • the array substrate may further be a COA-type array substrate.
  • the method for fabricating the array substrate further includes: Step 4, forming a color filter layer 5 on the protective layer 4.
  • the present invention provides an array substrate having a quantum dot layer disposed thereon, and a quantum filter layer further provided with a protective filter layer, which can improve color saturation and color purity through the quantum dot layer. Enlarging the display gamut range, forming a dense protection layer on the quantum dot layer by protecting the filter layer, preventing the subsequent process from causing damage to the quantum dot layer, and preventing impurities in the quantum dot glue from entering the liquid crystal layer to affect the display effect, and the protection filter
  • the light layer can also act as a filter, ie to prevent UV
  • the backlight or the laser backlight transmits light in the remaining unexcited backlight after the quantum dot is emitted, thereby improving the efficiency and stability of the quantum dot layer.
  • the invention also provides a method for fabricating the array substrate, which is simple It is easy to make a quantum dot layer on the array substrate, which makes up for the deficiency of the existing color filter layer in color development, expands the display color gamut range, and improves the filter layer by forming a protective filter layer on the quantum dot layer. The efficiency and stability of the quantum dot layer.

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Abstract

提供一种阵列基板及其制作方法。上述阵列基板包括：基板(1)、设于所述基板(1)上的TFT层(2)、设于所述TFT层(2)上的量子点层(3)、及设于所述量子点层(3)上的保护滤光层(4)，量子点层(3)的设置，弥补了现有的彩色滤光层在显色上的不足，扩大了显示色域范围，保护滤光层(4)的设置，解决了现有技术中量子点效率发挥不佳及稳定性差的问题。

Description

阵列基板及其制作方法 技术领域
本发明涉及一种显示技术领域，尤其涉及一种阵列基板及其制作方法。
背景技术
液晶显示装置(LCD，Liquid Crystal Display)具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。如：液晶电视、移动电话、个人数字助理(PDA)、数字相机、计算机屏幕或笔记本电脑屏幕等。通常液晶显示装置包括壳体、设于壳体内的液晶显示面板及设于壳体内的背光模组(Backlight module)。其中，液晶显示面板的结构主要是由一薄膜晶体管阵列基板(Thin Film Transistor Array Substrate，TFT Array Substrate)、一彩色滤光片基板(Color Filter，CF)、以及配置于两基板间的液晶层(Liquid Crystal Layer)所构成，其工作原理是通过在两片玻璃基板上施加驱动电压来控制液晶层的液晶分子的旋转，将背光模组的光线折射出来产生画面。
量子点是半径小于或接近于波尔半径的半导体纳米晶体，大部分由Ⅱ-Ⅵ族或Ⅲ-Ⅴ族元素组成的三个维度尺寸的纳米材料。由于量子限域效应，其内部的电子和空穴的运输受到限制，使得连续的能带结构变成分离的能级结构。当量子点的尺寸不同时，电子与空穴的量子限域程度不一样，分立的能级结构不同。在受到外来能量激发后，不同尺寸的量子点即发出不同波长的光，即各种颜色的光。量子点的优势在于：通过调控量子点的尺寸，可以实现发光波长范围覆盖到红外及整个可见光波段，且发射光波段窄，色彩饱和度高；量子点材料量子转换效率高；材料性能稳定；制备方法简单多样，可以从溶液中制备，资源丰富。量子点可吸收短波的蓝光，被激发后呈现出长波段光色，这一特性使得量子点能够改变背光源发出的光线颜色。
现有的液晶显示面板依靠其内部设置的红色滤光层、绿色滤光层、以及蓝色滤光层等彩色滤光层的滤光作用，将光源发出的白光分别转化为红、绿、蓝等单色光，不同颜色的彩色滤光层分别透射对应颜色波段的光，从而实现液晶显示面板的彩色显示。随着科技的进步，人们希望不断增加液晶显示面板的色饱合度和色域，而若需要扩大液晶显示面板的色域范围，就得提高彩色滤光层的色彩纯度，必须要使得颜料的含量增加，这样会降低彩色滤光层的透光率，为了保证液晶显示面板的显示亮度，还需要 提高光源的出光强度，导致液晶显示面板功耗的增加。
量子点显示技术在色域覆盖率、色彩控制精确性、红绿蓝色彩纯净度等各个维度已全面升级，革命性的实现了全色域显示，能够最真实还原图像色彩，被视为全球显示技术的制高点和影响全球的显示技术革命。传统的量子点显示技术的实现方法是将量子点直接引入液晶显示面板的两块基板中(即液晶盒内)，以弥补现有的彩色滤光层在显色上的不足，扩大其显示色域范围。然而，现有的液晶显示面板的制程工艺条件，会影响到量子点效率的发挥。如何进一步的提升量子点的稳定性，是需要考虑的问题。
发明内容
本发明的目的在于提供一种阵列基板，在阵列基板上设置量子点层及保护滤光层，弥补现有的彩色滤光层在显色上的不足，扩大显示色域范围，同时解决现有技术中量子点效率发挥不佳及稳定性差的问题。
本发明的目的还在于提供一种阵列基板的制作方法，该方法能够简单便捷的在阵列基板上制作量子点层及保护滤光层，弥补现有的彩色滤光层在显色上的不足，扩大显示色域范围，同时解决现有技术中量子点效率发挥不佳及稳定性差的问题。
为实现上述目的，本发明提供了一种阵列基板，包括：基板、设于所述基板上的TFT层、设于所述TFT层上的量子点层、及设于所述量子点层上的保护滤光层；
所述保护滤光层能够对量子点层形成致密的保护，所述保护滤光层还具有滤光作用，所述保护滤光层可以过滤一定波段的紫外光、或蓝光。
所述量子点层的量子点包括ⅡB-ⅥA元素组成的半导体、ⅢA-ⅤA元素组成的半导体、及碳量子点中的一种或多种，所述量子点为稳定直径在0～20nm的纳米粒子。
所述量子点层的发光颜色为红色、绿色、蓝色、黄色、及紫色中的一种或多种的组合。
所述保护滤光层的材料为氮化硅、氧化硅、氧化铟锡、聚酰亚胺、或聚芴衍生物。
所述保护滤光层上还设有彩色滤光层。
本发明还提供了一种阵列基板的制作方法，包括如下步骤：
步骤1、提供一基板，在所述基板制作TFT层；
步骤2、在所述TFT层上制作量子点层；
步骤3、在所述量子点层上制作一保护滤光层。
所述步骤2具体为，通过蒸镀的方法在所述TFT层形成量子点薄膜，得到量子点层。
所述步骤2具体为，提供量子点材料及溶解介质，将所述量子点材料溶解分散到所述溶解介质中，混合均匀，制得量子点胶，将所述量子点胶在所述TFT层上制作成膜，干燥固化后，得到量子点层。
所述步骤2中量子点材料为油溶性、或水溶性；所述量子点形态为球状、或棒状、或纤维状；所述溶解介质为硅胶系、或环氧系；所述步骤2中通过喷涂、旋涂、打印、或狭缝涂布的方式将所述量子点胶在所述TFT层上制作成膜。
所述阵列基板的制作方法，还包括：
步骤4、于所述保护层上制作彩色滤光层。
本发明还提供一种阵列基板，包括：基板、设于所述基板上的TFT层、设于所述TFT层上的量子点层、及设于所述量子点层上的保护滤光层；
所述保护滤光层能够对量子点层形成致密的保护，所述保护滤光层还具有滤光作用，所述保护滤光层能过滤一定波段的紫外光、或蓝光；
其中，所述量子点层的量子点包括ⅡB-ⅥA元素组成的半导体、ⅢA-ⅤA元素组成的半导体、及碳量子点中的一种或多种，所述量子点为稳定直径在0～20nm的纳米粒子；
其中，所述量子点层的发光颜色为红色、绿色、蓝色、黄色、及紫色中的一种或多种的组合；
其中，所述保护滤光层的材料为氮化硅、氧化硅、氧化铟锡、聚酰亚胺、或聚芴衍生物。本发明的有益效果：本发明提供了一种阵列基板，该阵列基板上设有量子点层，同时量子点层上还设有保护滤光层，通过量子点层能够提升色饱和度及色纯度，扩大显示色域范围，通过保护滤光层对量子点层形成致密的防护，防止后续制程对量子点层造成破坏，同时防止量子点胶中的杂质进入液晶层中影响显示效果，同时该保护滤光层还可以起到滤光的作用，即防止UV背光源或激光背光源在激发量子点发光后，剩余未激发的背光中的光透过，提升了量子点层的效率及稳定性；本发明还提供一种阵列基板的制作方法，该方法简单易行，通过在阵列基板上制作量子点层，弥补了现有的彩色滤光层在显色上的不足，扩大了显示色域范围，通过在量子点层上制作保护滤光层，提升了量子点层的效率及稳定性。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发 明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明的阵列基板的第一实施例结构示意图；
图2为采用图1所示阵列基板的显示面板结构示意图；
图3为本发明的阵列基板的第二实施例结构示意图；
图4为采用图3所示阵列基板的显示面板结构示意图；
图5为聚酰亚胺材料膜的穿透频谱；
图6为本发明的阵列基板的制作方法的流程图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明首先提供一种阵列基板，包括：基板1、设于所述基板1上的TFT层2、设于所述TFT层2上的量子点层3、及设于所述量子点层3上的保护滤光层4；
具体地，所述量子点层3的量子点为包括ⅡB-ⅥA元素组成的半导体(如硫化镉(CdS)、硒化镉(CdSe)、碲化镉(CdTe)、或硒化锌(ZnSe)等)、ⅢA-ⅤA元素组成的半导体(如磷化铟(InP)、或砷化铟(InAs)等)、及碳量子点等其他量子点材料中的一种或多种，其稳定直径在0～20nm的纳米粒子。
具体地，所述量子点层3的发光颜色包括但不仅限于红色、绿色、蓝色、黄色、及紫色中的一种或多种的组合。所述量子点层3可以为单色量子点或多色量子点混合于一整面上而形成的膜层，也可以为单色量子点或多色量子点经过图形工艺而形成的具有像素图形的膜层。具体的，所述保护滤光层4的材料可选择氮化硅(SiNx)、氧化硅(SiO2)、氧化铟锡(ITO)等无机材料，或聚酰亚胺(PI)、和聚芴衍生物(PFN)等有机材料。上述材料均具有滤光作用，可以截止短波紫外光、或蓝光，对短波紫外光、或蓝光均有较好的过滤效果，而对长波可见光具有很好的穿透效果，并可以通过调整其分子结构来提升过滤效果，如图5所示，聚酰亚胺膜对380～780nm波长的光透过率高，而对小于380nm波长的短波光的透过率急 剧下降，其对短波紫外光具有较好的过滤效果。
所述保护滤光层4能够对量子点层3形成致密的保护，防止后续制程(例如彩色滤光层的显影制程和水洗制程等)对量子点层3造成破坏，同时防止量子点胶中的杂质进入液晶层中影响显示效果。此外，由于所述保护滤光层4还具有滤光作用，即可以防止UV背光源或激光背光源在激发量子点发光后，剩余未激发的背光中的光透过去；以所述量子点层3的发光颜色为红光、绿光，背光模组发出的背光为蓝光为例，此时，设置所述保护滤光层4能够过滤蓝光，则可以防止背光模组发出的蓝光在激发量子点层3发光后，剩余未激发的蓝光穿透该保护滤光层4，进而提高量子点层3的发光效率，同时该保护滤光层4允许红色、或绿色光穿透，以进行彩色显示。
请参阅图2和图4，阵列基板与封装盖板对组后，形成显示面板；该显示面板可以为COA(Color Filter On Array)型面板、也可以为非COA型面板；另外，本发明对显示面板的驱动模式并没有限定性，对IPS、TN、VA、OLED、QLED等多种模式均使用。
如图2所示，该显示面板为非COA型面板，彩色滤光层5设于封装盖板的上基板6上。
此外，请参阅图3并结合图4，图4所示的显示面板为COA型面板，彩色滤光层5设于该阵列基板的保护滤光层4上。
请参阅图6，并结合图1，本发明还提供一种阵列基板的制作方法，包括如下步骤：
步骤1、提供一基板1，在所述基板1制作TFT层2。
具体地，所述基板1为透明基板，优选玻璃基板，所述TFT层2包括多个阵列排布的薄膜晶体管单元，及与所述薄膜晶体管单元相连的像素电极。
步骤2、在所述TFT层2上制作量子点层3；
具体的，所述步骤2为，提供量子点材料及溶解介质，将所述量子点材料溶解分散到所述溶解介质中，混合均匀，制得量子点胶，将所述量子点胶在所述TFT层2上制作成膜，干燥固化后，得到量子点层3；
所述步骤2中提供的量子点材料可以通过表面接枝或表面包覆等多种未限定量子点的改性处理方法得到，以使其与溶解介质相容，其可以为油溶性、也可以水溶性；所述量子点材料的量子点形态可选择球状、棒状、或纤维状等任意适合的形态；溶解介质可选择硅胶系、或环氧系等溶解介质体系，具体可依据实际选用的量子点的发光特性和溶解特性等多方面的 特性来进行选择，其中各成分比例、及与量子点的混合比例可以根据混合效果进行调整，以达到最佳的混合效果；步骤2中所述量子点胶在所述TFT层2上制作成膜的方式为喷涂、旋涂、打印、或狭缝涂布等方式。
或者，该步骤2中，所述量子点层3也可以是通过蒸镀的方法在所述TFT层2形成一层量子点薄膜；
所述量子点层3可以为单色量子点或多色量子点混合于一整面上而形成的膜层，也可以是单色量子点或多色量子点经过图案化工艺而形成的具有像素图形的膜层；若所述量子点层3为图案化的膜层则该步骤2中需要加入相应的图案化步骤。
步骤3、在所述量子点层3上制作一保护滤光层4。
具体地，所述保护滤光层4的材料可选择氮化硅(SiNx)、氧化硅(SiO2)、和氧化铟锡(ITO)等无机材料，或聚酰亚胺(PI)、和聚芴衍生物(PFN)等有机材料。上述材料均具有滤光作用，可以截止短波紫外光、或蓝光，对短波紫外光、或蓝光均有较好的过滤效果，而对长波可见光具有很好的穿透效果，并可以通过调整其分子结构来提升过滤效果，如图5所示，聚酰亚胺膜对380～780nm波长的光透过率高，而对小于380nm波长的短波光的透过率急剧下降，其对短波紫外光具有较好的过滤效果。
所述保护滤光层4能够对量子点层3形成致密的保护，防止后续制程(例如彩色滤光层的显影制程和水洗制程等)对量子点层3造成破坏，同时防止量子点胶中的杂质进入液晶层中影响显示效果。此外，由于所述保护滤光层4还具有滤光作用，即可以防止UV背光源或激光背光源在激发量子点发光后，剩余未激发的背光中的光透过去；以所述量子点层3的发光颜色为红光、绿光，背光模组发出的背光为蓝光为例，此时，设置所述保护滤光层4能够过滤蓝光，则可以防止背光模组发出的蓝光在激发量子点层3发光后，剩余未激发的蓝光穿透该保护滤光层4，进而提高量子点层3的发光效率，同时该保护滤光层4允许红色、或绿色光穿透，以进行彩色显示。
此外，所述阵列基板还可以为COA型的阵列基板，此时该阵列基板的制作方法还包括：步骤4、于所述保护层4上制作彩色滤光层5。
综上所述，本发明提供了一种阵列基板，该阵列基板上设有量子点层，同时量子点层上还设有保护滤光层，通过量子点层能够提升色饱和度及色纯度，扩大显示色域范围，通过保护滤光层对量子点层形成致密的防护，防止后续制程对量子点层造成破坏，同时防止量子点胶中的杂质进入液晶层中影响显示效果，同时该保护滤光层还可以起到滤光的作用，即防止UV 背光源或激光背光源在激发量子点发光后，剩余未激发的背光中的光透过，提升了量子点层的效率及稳定性；本发明还提供一种阵列基板的制作方法，该方法简单易行，通过在阵列基板上制作量子点层，弥补了现有的彩色滤光层在显色上的不足，扩大了显示色域范围，通过在量子点层上制作保护滤光层，提升了量子点层的效率及稳定性。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (12)

  1. 一种阵列基板，包括：基板、设于所述基板上的TFT层、设于所述TFT层上的量子点层、及设于所述量子点层上的保护滤光层；
    所述保护滤光层能够对量子点层形成致密的保护，所述保护滤光层还具有滤光作用，所述保护滤光层能过滤一定波段的紫外光、或蓝光。
  2. 如权利要求1所述的阵列基板，其中，所述量子点层的量子点包括Ⅱ B-ⅥA元素组成的半导体、ⅢA-Ⅴ A元素组成的半导体、及碳量子点中的一种或多种，所述量子点为稳定直径在0～20nm的纳米粒子。
  3. 如权利要求1所述的阵列基板，其中，所述量子点层的发光颜色为红色、绿色、蓝色、黄色、及紫色中的一种或多种的组合。
  4. 如权利要求1所述的阵列基板，其中，所述保护滤光层的材料为氮化硅、氧化硅、氧化铟锡、聚酰亚胺、或聚芴衍生物。
  5. 如权利要求1所述的阵列基板，其中，所述保护滤光层上还设有彩色滤光层。
  6. 一种阵列基板的制作方法，包括如下步骤：
    步骤1、提供一基板，在所述基板制作TFT层；
    步骤2、在所述TFT层上制作量子点层；
    步骤3、在所述量子点层上制作一保护滤光层。
  7. 如权利要求6所述的阵列基板的制作方法，其中，所述步骤2具体为，通过蒸镀的方法在所述TFT层形成量子点薄膜，得到量子点层。
  8. 如权利要求6所述的阵列基板的制作方法，其中，所述步骤2具体为，提供量子点材料及溶解介质，将所述量子点材料溶解分散到所述溶解介质中，混合均匀，制得量子点胶，将所述量子点胶在所述TFT层上制作成膜，干燥固化后，得到量子点层。
  9. 如权利要求8所述的阵列基板的制作方法，其中，所述步骤2中量子点材料为油溶性、或水溶性；所述量子点形态为球状、或棒状、或纤维状；所述溶解介质为硅胶系、或环氧系；所述步骤2中通过喷涂、旋涂、打印、或狭缝涂布的方式将所述量子点胶在所述TFT层上制作成膜。
  10. 如权利要求6所述的阵列基板的制作方法，其中，还包括：
    步骤4、于所述保护层上制作彩色滤光层。
  11. 一种阵列基板，包括：基板、设于所述基板上的TFT层、设于所述TFT层上的量子点层、及设于所述量子点层上的保护滤光层；
    所述保护滤光层能够对量子点层形成致密的保护，所述保护滤光层还具有滤光作用，所述保护滤光层能过滤一定波段的紫外光、或蓝光；
    其中，所述量子点层的量子点包括Ⅱ B-ⅥA元素组成的半导体、ⅢA-Ⅴ A元素组成的半导体、及碳量子点中的一种或多种，所述量子点为稳定直径在0～20nm的纳米粒子；
    其中，所述量子点层的发光颜色为红色、绿色、蓝色、黄色、及紫色中的一种或多种的组合；
    其中，所述保护滤光层的材料为氮化硅、氧化硅、氧化铟锡、聚酰亚胺、或聚芴衍生物。
  12. 如权利要求11所述的阵列基板，其中，所述保护滤光层上还设有彩色滤光层。
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