CN105185790B - 阵列基板及其制作方法 - Google Patents

阵列基板及其制作方法 Download PDF

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CN105185790B
CN105185790B CN201510618853.6A CN201510618853A CN105185790B CN 105185790 B CN105185790 B CN 105185790B CN 201510618853 A CN201510618853 A CN 201510618853A CN 105185790 B CN105185790 B CN 105185790B
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CN105185790A (zh
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程小平
李泳锐
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/914,619 priority patent/US10007156B2/en
Priority to PCT/CN2015/098341 priority patent/WO2017049788A1/zh
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Abstract

本发明提供一种阵列基板及其制作方法。本发明的阵列基板包括：基板(1)、设于所述基板(1)上的TFT层(2)、设于所述TFT层(2)上的量子点层(3)、及设于所述量子点层(3)上的保护滤光层(4)，量子点层(3)的设置，弥补了现有的彩色滤光层在显色上的不足，扩大了显示色域范围，保护滤光层(4)的设置，解决了现有技术中量子点效率发挥不佳及稳定性差的问题。

Description

阵列基板及其制作方法
技术领域
本发明涉及一种显示技术领域，尤其涉及一种阵列基板及其制作方法。
背景技术
液晶显示装置(LCD，Liquid Crystal Display)具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。如：液晶电视、移动电话、个人数字助理(PDA)、数字相机、计算机屏幕或笔记本电脑屏幕等。通常液晶显示装置包括壳体、设于壳体内的液晶显示面板及设于壳体内的背光模组(Backlight module)。其中，液晶显示面板的结构主要是由一薄膜晶体管阵列基板(Thin Film Transistor Array Substrate，TFT Array Substrate)、一彩色滤光片基板(Color Filter，CF)、以及配置于两基板间的液晶层(Liquid Crystal Layer)所构成，其工作原理是通过在两片玻璃基板上施加驱动电压来控制液晶层的液晶分子的旋转，将背光模组的光线折射出来产生画面。
量子点是半径小于或接近于波尔半径的半导体纳米晶体，大部分由Ⅱ-Ⅵ族或Ⅲ-Ⅴ族元素组成的三个维度尺寸的纳米材料。由于量子限域效应，其内部的电子和空穴的运输受到限制，使得连续的能带结构变成分离的能级结构。当量子点的尺寸不同时，电子与空穴的量子限域程度不一样，分立的能级结构不同。在受到外来能量激发后，不同尺寸的量子点即发出不同波长的光，即各种颜色的光。量子点的优势在于：通过调控量子点的尺寸，可以实现发光波长范围覆盖到红外及整个可见光波段，且发射光波段窄，色彩饱和度高；量子点材料量子转换效率高；材料性能稳定；制备方法简单多样，可以从溶液中制备，资源丰富。量子点可吸收短波的蓝光，被激发后呈现出长波段光色，这一特性使得量子点能够改变背光源发出的光线颜色。
现有的液晶显示面板依靠其内部设置的红色滤光层、绿色滤光层、以及蓝色滤光层等彩色滤光层的滤光作用，将光源发出的白光分别转化为红、绿、蓝等单色光，不同颜色的彩色滤光层分别透射对应颜色波段的光，从而实现液晶显示面板的彩色显示。随着科技的进步，人们希望不断增加液晶显示面板的色饱合度和色域，而若需要扩大液晶显示面板的色域范围，就得提高彩色滤光层的色彩纯度，必须要使得颜料的含量增加，这样会降低彩色滤光层的透光率，为了保证液晶显示面板的显示亮度，还需要提高光源的出光强度，导致液晶显示面板功耗的增加。
量子点显示技术在色域覆盖率、色彩控制精确性、红绿蓝色彩纯净度等各个维度已全面升级，革命性的实现了全色域显示，能够最真实还原图像色彩，被视为全球显示技术的制高点和影响全球的显示技术革命。传统的量子点显示技术的实现方法是将量子点直接引入液晶显示面板的两块基板中(即液晶盒内)，以弥补现有的彩色滤光层在显色上的不足，扩大其显示色域范围。然而，现有的液晶显示面板的制程工艺条件，会影响到量子点效率的发挥。如何进一步的提升量子点的稳定性，是需要考虑的问题。
发明内容
本发明的目的在于提供一种阵列基板，在阵列基板上设置量子点层及保护滤光层，弥补现有的彩色滤光层在显色上的不足，扩大显示色域范围，同时解决现有技术中量子点效率发挥不佳及稳定性差的问题。
本发明的目的还在于提供一种阵列基板的制作方法，该方法能够简单便捷的在阵列基板上制作量子点层及保护滤光层，弥补现有的彩色滤光层在显色上的不足，扩大显示色域范围，同时解决现有技术中量子点效率发挥不佳及稳定性差的问题。
为实现上述目的，本发明提供了一种阵列基板，包括：基板、设于所述基板上的TFT层、设于所述TFT层上的量子点层、及设于所述量子点层上的保护滤光层；
所述保护滤光层能够对量子点层形成致密的保护，所述保护滤光层还具有滤光作用，所述保护滤光层可以过滤一定波段的紫外光、或蓝光。
所述量子点层的量子点包括ⅡB-ⅥA元素组成的半导体、ⅢA-ⅤA元素组成的半导体、及碳量子点中的一种或多种，所述量子点为稳定直径在0～20nm的纳米粒子。
所述量子点层的发光颜色为红色、绿色、蓝色、黄色、及紫色中的一种或多种的组合。
所述保护滤光层的材料为氮化硅、氧化硅、氧化铟锡、聚酰亚胺、或聚芴衍生物。
所述保护滤光层上还设有彩色滤光层。
本发明还提供了一种阵列基板的制作方法，包括如下步骤：
步骤1、提供一基板，在所述基板制作TFT层；
步骤2、在所述TFT层上制作量子点层；
步骤3、在所述量子点层上制作一保护滤光层。
所述步骤2具体为，通过蒸镀的方法在所述TFT层形成量子点薄膜，得到量子点层。
所述步骤2具体为，提供量子点材料及溶解介质，将所述量子点材料溶解分散到所述溶解介质中，混合均匀，制得量子点胶，将所述量子点胶在所述TFT层上制作成膜，干燥固化后，得到量子点层。
所述步骤2中量子点材料为油溶性、或水溶性；所述量子点形态为球状、或棒状、或纤维状；所述溶解介质为硅胶系、或环氧系；所述步骤2中通过喷涂、旋涂、打印、或狭缝涂布的方式将所述量子点胶在所述TFT层上制作成膜。
所述阵列基板的制作方法，还包括：
步骤4、于所述保护层上制作彩色滤光层。
本发明的有益效果：本发明提供了一种阵列基板，该阵列基板上设有量子点层，同时量子点层上还设有保护滤光层，通过量子点层能够提升色饱和度及色纯度，扩大显示色域范围，通过保护滤光层对量子点层形成致密的防护，防止后续制程对量子点层造成破坏，同时防止量子点胶中的杂质进入液晶层中影响显示效果，同时该保护滤光层还可以起到滤光的作用，即防止UV背光源或激光背光源在激发量子点发光后，剩余未激发的背光中的光透过，提升了量子点层的效率及稳定性；本发明还提供一种阵列基板的制作方法，该方法简单易行，通过在阵列基板上制作量子点层，弥补了现有的彩色滤光层在显色上的不足，扩大了显示色域范围，通过在量子点层上制作保护滤光层，提升了量子点层的效率及稳定性。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明的阵列基板的第一实施例结构示意图；
图2为采用图1所示阵列基板的显示面板结构示意图；
图3为本发明的阵列基板的第二实施例结构示意图；
图4为采用图3所示阵列基板的显示面板结构示意图；
图5为聚酰亚胺材料膜的穿透频谱；
图6为本发明的阵列基板的制作方法的流程图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明首先提供一种阵列基板，包括：基板1、设于所述基板1上的TFT层2、设于所述TFT层2上的量子点层3、及设于所述量子点层3上的保护滤光层4；
具体地，所述量子点层3的量子点为包括ⅡB-ⅥA元素组成的半导体(如硫化镉(CdS)、硒化镉(CdSe)、碲化镉(CdTe)、或硒化锌(ZnSe)等)、ⅢA-ⅤA元素组成的半导体(如磷化铟(InP)、或砷化铟(InAs)等)、及碳量子点等其他量子点材料中的一种或多种，其稳定直径在0～20nm的纳米粒子。
具体地，所述量子点层3的发光颜色包括但不仅限于红色、绿色、蓝色、黄色、及紫色中的一种或多种的组合。所述量子点层3可以为单色量子点或多色量子点混合于一整面上而形成的膜层，也可以为单色量子点或多色量子点经过图形工艺而形成的具有像素图形的膜层。具体的，所述保护滤光层4的材料可选择氮化硅(SiNx)、氧化硅(SiO2)、氧化铟锡(ITO)等无机材料，或聚酰亚胺(PI)、和聚芴衍生物(PFN)等有机材料。上述材料均具有滤光作用，可以截止短波紫外光、或蓝光，对短波紫外光、或蓝光均有较好的过滤效果，而对长波可见光具有很好的穿透效果，并可以通过调整其分子结构来提升过滤效果，如图5所示，聚酰亚胺膜对380～780nm波长的光透过率高，而对小于380nm波长的短波光的透过率急剧下降，其对短波紫外光具有较好的过滤效果。
所述保护滤光层4能够对量子点层3形成致密的保护，防止后续制程(例如彩色滤光层的显影制程和水洗制程等)对量子点层3造成破坏，同时防止量子点胶中的杂质进入液晶层中影响显示效果。此外，由于所述保护滤光层4还具有滤光作用，即可以防止UV背光源或激光背光源在激发量子点发光后，剩余未激发的背光中的光透过去；以所述量子点层3的发光颜色为红光、绿光，背光模组发出的背光为蓝光为例，此时，设置所述保护滤光层4能够过滤蓝光，则可以防止背光模组发出的蓝光在激发量子点层3发光后，剩余未激发的蓝光穿透该保护滤光层4，进而提高量子点层3的发光效率，同时该保护滤光层4允许红色、或绿色光穿透，以进行彩色显示。
请参阅图2和图4，阵列基板与封装盖板对组后，形成显示面板；该显示面板可以为COA(Color Filter On Array)型面板、也可以为非COA型面板；另外，本发明对显示面板的驱动模式并没有限定性，对IPS、TN、VA、OLED、QLED等多种模式均使用。
如图2所示，该显示面板为非COA型面板，彩色滤光层5设于封装盖板的上基板6上。
此外，请参阅图3并结合图4，图4所示的显示面板为COA型面板，彩色滤光层5设于该阵列基板的保护滤光层4上。
请参阅图6，并结合图1，本发明还提供一种阵列基板的制作方法，包括如下步骤：
步骤1、提供一基板1，在所述基板1制作TFT层2。
具体地，所述基板1为透明基板，优选玻璃基板，所述TFT层2包括多个阵列排布的薄膜晶体管单元，及与所述薄膜晶体管单元相连的像素电极。
步骤2、在所述TFT层2上制作量子点层3；
具体的，所述步骤2为，提供量子点材料及溶解介质，将所述量子点材料溶解分散到所述溶解介质中，混合均匀，制得量子点胶，将所述量子点胶在所述TFT层2上制作成膜，干燥固化后，得到量子点层3；
所述步骤2中提供的量子点材料可以通过表面接枝或表面包覆等多种未限定量子点的改性处理方法得到，以使其与溶解介质相容，其可以为油溶性、也可以水溶性；所述量子点材料的量子点形态可选择球状、棒状、或纤维状等任意适合的形态；溶解介质可选择硅胶系、或环氧系等溶解介质体系，具体可依据实际选用的量子点的发光特性和溶解特性等多方面的特性来进行选择，其中各成分比例、及与量子点的混合比例可以根据混合效果进行调整，以达到最佳的混合效果；步骤2中所述量子点胶在所述TFT层2上制作成膜的方式为喷涂、旋涂、打印、或狭缝涂布等方式。
或者，该步骤2中，所述量子点层3也可以是通过蒸镀的方法在所述TFT层2形成一层量子点薄膜；
所述量子点层3可以为单色量子点或多色量子点混合于一整面上而形成的膜层，也可以是单色量子点或多色量子点经过图案化工艺而形成的具有像素图形的膜层；若所述量子点层3为图案化的膜层则该步骤2中需要加入相应的图案化步骤。
步骤3、在所述量子点层3上制作一保护滤光层4。
具体地，所述保护滤光层4的材料可选择氮化硅(SiNx)、氧化硅(SiO2)、和氧化铟锡(ITO)等无机材料，或聚酰亚胺(PI)、和聚芴衍生物(PFN)等有机材料。上述材料均具有滤光作用，可以截止短波紫外光、或蓝光，对短波紫外光、或蓝光均有较好的过滤效果，而对长波可见光具有很好的穿透效果，并可以通过调整其分子结构来提升过滤效果，如图5所示，聚酰亚胺膜对380～780nm波长的光透过率高，而对小于380nm波长的短波光的透过率急剧下降，其对短波紫外光具有较好的过滤效果。
所述保护滤光层4能够对量子点层3形成致密的保护，防止后续制程(例如彩色滤光层的显影制程和水洗制程等)对量子点层3造成破坏，同时防止量子点胶中的杂质进入液晶层中影响显示效果。此外，由于所述保护滤光层4还具有滤光作用，即可以防止UV背光源或激光背光源在激发量子点发光后，剩余未激发的背光中的光透过去；以所述量子点层3的发光颜色为红光、绿光，背光模组发出的背光为蓝光为例，此时，设置所述保护滤光层4能够过滤蓝光，则可以防止背光模组发出的蓝光在激发量子点层3发光后，剩余未激发的蓝光穿透该保护滤光层4，进而提高量子点层3的发光效率，同时该保护滤光层4允许红色、或绿色光穿透，以进行彩色显示。
此外，所述阵列基板还可以为COA型的阵列基板，此时该阵列基板的制作方法还包括：步骤4、于所述保护层4上制作彩色滤光层5。
综上所述，本发明提供了一种阵列基板，该阵列基板上设有量子点层，同时量子点层上还设有保护滤光层，通过量子点层能够提升色饱和度及色纯度，扩大显示色域范围，通过保护滤光层对量子点层形成致密的防护，防止后续制程对量子点层造成破坏，同时防止量子点胶中的杂质进入液晶层中影响显示效果，同时该保护滤光层还可以起到滤光的作用，即防止UV背光源或激光背光源在激发量子点发光后，剩余未激发的背光中的光透过，提升了量子点层的效率及稳定性；本发明还提供一种阵列基板的制作方法，该方法简单易行，通过在阵列基板上制作量子点层，弥补了现有的彩色滤光层在显色上的不足，扩大了显示色域范围，通过在量子点层上制作保护滤光层，提升了量子点层的效率及稳定性。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (7)

1.一种阵列基板，其特征在于，包括：基板(1)、设于所述基板(1)上的TFT层(2)、设于所述TFT层(2)上的量子点层(3)、及设于所述量子点层(3)上的保护滤光层(4)；
所述保护滤光层(4)能够对量子点层(3)形成致密的保护，所述保护滤光层(4)还具有滤光作用，所述保护滤光层(4)能过滤一定波段的紫外光、或蓝光；
所述保护滤光层(4)上还设有彩色滤光层(5)；
所述保护滤光层(4)的材料为氮化硅、氧化硅、氧化铟锡、聚酰亚胺、或聚芴衍生物。
2.如权利要求1所述的阵列基板，其特征在于，所述量子点层(3)的量子点包括ⅡB-ⅥA元素组成的半导体、ⅢA-ⅤA元素组成的半导体、及碳量子点中的一种或多种，所述量子点为稳定直径在0～20nm的纳米粒子。
3.如权利要求1所述的阵列基板，其特征在于，所述量子点层(3)的发光颜色为红色、绿色、蓝色、黄色、及紫色中的一种或多种的组合。
4.一种如权利要求1所述的阵列基板的制作方法，其特征在于，包括如下步骤：
步骤1、提供一基板(1)，在所述基板(1)制作TFT层(2)；
步骤2、在所述TFT层(2)上制作量子点层(3)；
步骤3、在所述量子点层(3)上制作一保护滤光层(4)；
步骤4、于所述保护滤光层(4)上制作彩色滤光层(5)；
所述保护滤光层(4)的材料为氮化硅、氧化硅、氧化铟锡、聚酰亚胺、或聚芴衍生物。
5.如权利要求4所述的阵列基板的制作方法，其特征在于，所述步骤2具体为，通过蒸镀的方法在所述TFT层(2)形成量子点薄膜，得到量子点层(3)。
6.如权利要求4所述的阵列基板的制作方法，其特征在于，所述步骤2具体为，提供量子点材料及溶解介质，将所述量子点材料溶解分散到所述溶解介质中，混合均匀，制得量子点胶，将所述量子点胶在所述TFT层(2)上制作成膜，干燥固化后，得到量子点层(3)。
7.如权利要求6所述的阵列基板的制作方法，其特征在于，所述步骤2中量子点材料为油溶性、或水溶性；所述量子点形态为球状、或棒状、或纤维状；所述溶解介质为硅胶系、或环氧系；所述步骤2中通过喷涂、旋涂、打印、或狭缝涂布的方式将所述量子点胶在所述TFT层(2)上制作成膜。
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