WO2016195047A1 - 分散体 - Google Patents
分散体 Download PDFInfo
- Publication number
- WO2016195047A1 WO2016195047A1 PCT/JP2016/066499 JP2016066499W WO2016195047A1 WO 2016195047 A1 WO2016195047 A1 WO 2016195047A1 JP 2016066499 W JP2016066499 W JP 2016066499W WO 2016195047 A1 WO2016195047 A1 WO 2016195047A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- group
- dispersant
- molecular weight
- particles
- dispersion
- Prior art date
Links
- 239000006185 dispersion Substances 0.000 title claims abstract description 176
- 239000002270 dispersing agent Substances 0.000 claims abstract description 142
- 239000002245 particle Substances 0.000 claims abstract description 128
- 239000000126 substance Substances 0.000 claims abstract description 54
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 32
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 32
- 229920001223 polyethylene glycol Polymers 0.000 claims abstract description 32
- 239000002202 Polyethylene glycol Substances 0.000 claims abstract description 31
- 238000005227 gel permeation chromatography Methods 0.000 claims abstract description 30
- 238000009826 distribution Methods 0.000 claims abstract description 17
- 239000002923 metal particle Substances 0.000 claims abstract description 11
- 238000000576 coating method Methods 0.000 claims description 97
- 239000011248 coating agent Substances 0.000 claims description 95
- 229910052751 metal Inorganic materials 0.000 claims description 65
- 239000002184 metal Substances 0.000 claims description 65
- 125000004434 sulfur atom Chemical group 0.000 claims description 60
- 239000000463 material Substances 0.000 claims description 55
- 229910052717 sulfur Inorganic materials 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 40
- 150000001875 compounds Chemical class 0.000 claims description 37
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 31
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 31
- 239000010949 copper Substances 0.000 claims description 31
- 229910052802 copper Inorganic materials 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 27
- 125000000524 functional group Chemical group 0.000 claims description 26
- 238000011282 treatment Methods 0.000 claims description 26
- 239000005751 Copper oxide Substances 0.000 claims description 18
- 229910000431 copper oxide Inorganic materials 0.000 claims description 18
- 239000011163 secondary particle Substances 0.000 claims description 17
- 238000000137 annealing Methods 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 14
- 238000000921 elemental analysis Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000009832 plasma treatment Methods 0.000 claims description 11
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 10
- 150000008117 polysulfides Polymers 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- ABLZXFCXXLZCGV-UHFFFAOYSA-N phosphonic acid group Chemical group P(O)(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 8
- 229920001451 polypropylene glycol Polymers 0.000 claims description 8
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 8
- 125000003277 amino group Chemical group 0.000 claims description 7
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 7
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical group O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims description 6
- KZNICNPSHKQLFF-UHFFFAOYSA-N succinimide Chemical group O=C1CCC(=O)N1 KZNICNPSHKQLFF-UHFFFAOYSA-N 0.000 claims description 6
- 125000000542 sulfonic acid group Chemical group 0.000 claims description 6
- 125000001918 phosphonic acid ester group Chemical group 0.000 claims description 5
- 125000002327 selenol group Chemical group [H][Se]* 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 4
- 150000008065 acid anhydrides Chemical group 0.000 claims 1
- 239000010408 film Substances 0.000 description 199
- 238000000034 method Methods 0.000 description 75
- 238000007639 printing Methods 0.000 description 47
- -1 polyethylene terephthalate Polymers 0.000 description 43
- 239000002904 solvent Substances 0.000 description 43
- 150000003573 thiols Chemical class 0.000 description 41
- 230000000052 comparative effect Effects 0.000 description 29
- 239000012298 atmosphere Substances 0.000 description 26
- 239000010410 layer Substances 0.000 description 25
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 22
- 229960004643 cupric oxide Drugs 0.000 description 22
- 230000002441 reversible effect Effects 0.000 description 18
- 239000010419 fine particle Substances 0.000 description 17
- 239000007789 gas Substances 0.000 description 17
- 230000009467 reduction Effects 0.000 description 17
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 16
- 238000010304 firing Methods 0.000 description 16
- 238000007792 addition Methods 0.000 description 15
- 238000009835 boiling Methods 0.000 description 15
- 238000003860 storage Methods 0.000 description 15
- 230000000694 effects Effects 0.000 description 14
- 238000005259 measurement Methods 0.000 description 14
- 230000007774 longterm Effects 0.000 description 13
- 239000010409 thin film Substances 0.000 description 13
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 12
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 12
- 239000003795 chemical substances by application Substances 0.000 description 12
- 229920000139 polyethylene terephthalate Polymers 0.000 description 12
- 239000005020 polyethylene terephthalate Substances 0.000 description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 12
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 11
- 229920000642 polymer Polymers 0.000 description 11
- 239000002344 surface layer Substances 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 10
- 229920001577 copolymer Polymers 0.000 description 10
- 229920001427 mPEG Polymers 0.000 description 10
- 239000002244 precipitate Substances 0.000 description 10
- 239000011164 primary particle Substances 0.000 description 10
- 230000002829 reductive effect Effects 0.000 description 10
- 229920005989 resin Polymers 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 229920006324 polyoxymethylene Polymers 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 8
- 239000004698 Polyethylene Substances 0.000 description 8
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 8
- 239000002253 acid Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 8
- 229940112669 cuprous oxide Drugs 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 229920000573 polyethylene Polymers 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 238000005119 centrifugation Methods 0.000 description 7
- 238000001035 drying Methods 0.000 description 7
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 7
- 239000011112 polyethylene naphthalate Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229920002799 BoPET Polymers 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 239000002033 PVDF binder Substances 0.000 description 6
- 239000004696 Poly ether ether ketone Substances 0.000 description 6
- 229930182556 Polyacetal Natural products 0.000 description 6
- 239000004952 Polyamide Substances 0.000 description 6
- 239000004693 Polybenzimidazole Substances 0.000 description 6
- 239000004697 Polyetherimide Substances 0.000 description 6
- 239000004734 Polyphenylene sulfide Substances 0.000 description 6
- 239000004954 Polyphthalamide Substances 0.000 description 6
- 239000004372 Polyvinyl alcohol Substances 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 6
- 125000004432 carbon atom Chemical group C* 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 6
- 239000011737 fluorine Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 125000003827 glycol group Chemical group 0.000 description 6
- 238000007641 inkjet printing Methods 0.000 description 6
- 239000002609 medium Substances 0.000 description 6
- 125000001624 naphthyl group Chemical group 0.000 description 6
- 230000001590 oxidative effect Effects 0.000 description 6
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 6
- 229920002492 poly(sulfone) Polymers 0.000 description 6
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 6
- 229920002647 polyamide Polymers 0.000 description 6
- 229920001230 polyarylate Polymers 0.000 description 6
- 229920002480 polybenzimidazole Polymers 0.000 description 6
- 229920001083 polybutene Polymers 0.000 description 6
- 229920002530 polyetherether ketone Polymers 0.000 description 6
- 229920001601 polyetherimide Polymers 0.000 description 6
- 239000004926 polymethyl methacrylate Substances 0.000 description 6
- 229920001955 polyphenylene ether Polymers 0.000 description 6
- 229920000069 polyphenylene sulfide Polymers 0.000 description 6
- 229920006375 polyphtalamide Polymers 0.000 description 6
- 229920002451 polyvinyl alcohol Polymers 0.000 description 6
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 6
- 239000011593 sulfur Substances 0.000 description 6
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 125000003118 aryl group Chemical group 0.000 description 5
- 150000001879 copper Chemical class 0.000 description 5
- 229910052734 helium Inorganic materials 0.000 description 5
- 239000001307 helium Substances 0.000 description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 5
- 230000003993 interaction Effects 0.000 description 5
- 239000012046 mixed solvent Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 229920000136 polysorbate Polymers 0.000 description 5
- 238000002203 pretreatment Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000004721 Polyphenylene oxide Substances 0.000 description 4
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 4
- 125000004018 acid anhydride group Chemical group 0.000 description 4
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- MWKFXSUHUHTGQN-UHFFFAOYSA-N decan-1-ol Chemical compound CCCCCCCCCCO MWKFXSUHUHTGQN-UHFFFAOYSA-N 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 4
- 239000002105 nanoparticle Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 4
- 229920000728 polyester Polymers 0.000 description 4
- 229920000570 polyether Polymers 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 4
- 150000003254 radicals Chemical class 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 150000005846 sugar alcohols Polymers 0.000 description 4
- 239000006228 supernatant Substances 0.000 description 4
- 238000001291 vacuum drying Methods 0.000 description 4
- RXWOHFUULDINMC-UHFFFAOYSA-N 2-(3-nitrothiophen-2-yl)acetic acid Chemical compound OC(=O)CC=1SC=CC=1[N+]([O-])=O RXWOHFUULDINMC-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 125000004361 3,4,5-trifluorophenyl group Chemical group [H]C1=C(F)C(F)=C(F)C([H])=C1* 0.000 description 3
- 125000004180 3-fluorophenyl group Chemical group [H]C1=C([H])C(*)=C([H])C(F)=C1[H] 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 229920000877 Melamine resin Polymers 0.000 description 3
- 238000005481 NMR spectroscopy Methods 0.000 description 3
- 229920000459 Nitrile rubber Polymers 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229930040373 Paraformaldehyde Natural products 0.000 description 3
- 229920008285 Poly(ether ketone) PEK Polymers 0.000 description 3
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 3
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 3
- 239000005062 Polybutadiene Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 239000004793 Polystyrene Substances 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229920001807 Urea-formaldehyde Polymers 0.000 description 3
- 229920000800 acrylic rubber Polymers 0.000 description 3
- 125000002252 acyl group Chemical group 0.000 description 3
- 125000003342 alkenyl group Chemical group 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 125000000304 alkynyl group Chemical group 0.000 description 3
- 125000003368 amide group Chemical group 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 125000004104 aryloxy group Chemical group 0.000 description 3
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 229920005549 butyl rubber Polymers 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000012789 electroconductive film Substances 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000000284 extract Substances 0.000 description 3
- 125000001188 haloalkyl group Chemical group 0.000 description 3
- 125000003106 haloaryl group Chemical group 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 150000002825 nitriles Chemical class 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 150000002894 organic compounds Chemical class 0.000 description 3
- 125000006353 oxyethylene group Chemical group 0.000 description 3
- 239000003973 paint Substances 0.000 description 3
- 125000000538 pentafluorophenyl group Chemical group FC1=C(F)C(F)=C(*)C(F)=C1F 0.000 description 3
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 3
- 239000005011 phenolic resin Substances 0.000 description 3
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 229920000058 polyacrylate Polymers 0.000 description 3
- 229920002312 polyamide-imide Polymers 0.000 description 3
- 229920002857 polybutadiene Polymers 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 229920001195 polyisoprene Polymers 0.000 description 3
- 239000011116 polymethylpentene Substances 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 229920001021 polysulfide Polymers 0.000 description 3
- 239000005077 polysulfide Substances 0.000 description 3
- 239000004800 polyvinyl chloride Substances 0.000 description 3
- 239000003223 protective agent Substances 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- 241000894007 species Species 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 229920003048 styrene butadiene rubber Polymers 0.000 description 3
- 230000003685 thermal hair damage Effects 0.000 description 3
- 125000001544 thienyl group Chemical group 0.000 description 3
- 125000005031 thiocyano group Chemical group S(C#N)* 0.000 description 3
- RMVRSNDYEFQCLF-UHFFFAOYSA-N thiophenol Chemical compound SC1=CC=CC=C1 RMVRSNDYEFQCLF-UHFFFAOYSA-N 0.000 description 3
- 238000005011 time of flight secondary ion mass spectroscopy Methods 0.000 description 3
- 230000037303 wrinkles Effects 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- PMBXCGGQNSVESQ-UHFFFAOYSA-N 1-Hexanethiol Chemical compound CCCCCCS PMBXCGGQNSVESQ-UHFFFAOYSA-N 0.000 description 2
- SDAWVOFJSUUKMR-UHFFFAOYSA-N 12-sulfanyldodecanoic acid Chemical compound OC(=O)CCCCCCCCCCCS SDAWVOFJSUUKMR-UHFFFAOYSA-N 0.000 description 2
- KYNFOMQIXZUKRK-UHFFFAOYSA-N 2,2'-dithiodiethanol Chemical compound OCCSSCCO KYNFOMQIXZUKRK-UHFFFAOYSA-N 0.000 description 2
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 2
- QPRQEDXDYOZYLA-UHFFFAOYSA-N 2-methylbutan-1-ol Chemical compound CCC(C)CO QPRQEDXDYOZYLA-UHFFFAOYSA-N 0.000 description 2
- BDFAOUQQXJIZDG-UHFFFAOYSA-N 2-methylpropane-1-thiol Chemical compound CC(C)CS BDFAOUQQXJIZDG-UHFFFAOYSA-N 0.000 description 2
- SHLSSLVZXJBVHE-UHFFFAOYSA-N 3-sulfanylpropan-1-ol Chemical compound OCCCS SHLSSLVZXJBVHE-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- 239000005749 Copper compound Substances 0.000 description 2
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 2
- BWGNESOTFCXPMA-UHFFFAOYSA-N Dihydrogen disulfide Chemical compound SS BWGNESOTFCXPMA-UHFFFAOYSA-N 0.000 description 2
- YWHLKYXPLRWGSE-UHFFFAOYSA-N Dimethyl trisulfide Chemical compound CSSSC YWHLKYXPLRWGSE-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- YNQLUTRBYVCPMQ-UHFFFAOYSA-N Ethylbenzene Chemical compound CCC1=CC=CC=C1 YNQLUTRBYVCPMQ-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- RZKSECIXORKHQS-UHFFFAOYSA-N Heptan-3-ol Chemical compound CCCCC(O)CC RZKSECIXORKHQS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000004566 IR spectroscopy Methods 0.000 description 2
- GIJGXNFNUUFEGH-UHFFFAOYSA-N Isopentyl mercaptan Chemical compound CC(C)CCS GIJGXNFNUUFEGH-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 2
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 241001662443 Phemeranthus parviflorus Species 0.000 description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 150000001334 alicyclic compounds Chemical group 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- IVRMZWNICZWHMI-UHFFFAOYSA-N azide group Chemical group [N-]=[N+]=[N-] IVRMZWNICZWHMI-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 150000001639 boron compounds Chemical group 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 2
- 125000002843 carboxylic acid group Chemical group 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229940108928 copper Drugs 0.000 description 2
- 150000001880 copper compounds Chemical class 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 239000002612 dispersion medium Substances 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 150000004662 dithiols Chemical class 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 239000003480 eluent Substances 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- DNJIEGIFACGWOD-UHFFFAOYSA-N ethanethiol Chemical compound CCS DNJIEGIFACGWOD-UHFFFAOYSA-N 0.000 description 2
- 238000001036 glow-discharge mass spectrometry Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
- 238000007602 hot air drying Methods 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000001095 inductively coupled plasma mass spectrometry Methods 0.000 description 2
- 238000007603 infrared drying Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- 238000004949 mass spectrometry Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N n-Octanol Natural products CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- ZWRUINPWMLAQRD-UHFFFAOYSA-N nonan-1-ol Chemical compound CCCCCCCCCO ZWRUINPWMLAQRD-UHFFFAOYSA-N 0.000 description 2
- 238000007645 offset printing Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 238000010979 pH adjustment Methods 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- SUVIGLJNEAMWEG-UHFFFAOYSA-N propane-1-thiol Chemical compound CCCS SUVIGLJNEAMWEG-UHFFFAOYSA-N 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 238000002411 thermogravimetry Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 2
- 210000001364 upper extremity Anatomy 0.000 description 2
- 239000003643 water by type Substances 0.000 description 2
- 229920003169 water-soluble polymer Polymers 0.000 description 2
- CUNWUEBNSZSNRX-RKGWDQTMSA-N (2r,3r,4r,5s)-hexane-1,2,3,4,5,6-hexol;(z)-octadec-9-enoic acid Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO.OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO.CCCCCCCC\C=C/CCCCCCCC(O)=O.CCCCCCCC\C=C/CCCCCCCC(O)=O.CCCCCCCC\C=C/CCCCCCCC(O)=O CUNWUEBNSZSNRX-RKGWDQTMSA-N 0.000 description 1
- VNDRMZTXEFFQDR-UHFFFAOYSA-N (piperidine-1-carbothioyltrisulfanyl) piperidine-1-carbodithioate Chemical compound C1CCCCN1C(=S)SSSSC(=S)N1CCCCC1 VNDRMZTXEFFQDR-UHFFFAOYSA-N 0.000 description 1
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 1
- VYMPLPIFKRHAAC-UHFFFAOYSA-N 1,2-ethanedithiol Chemical compound SCCS VYMPLPIFKRHAAC-UHFFFAOYSA-N 0.000 description 1
- 229940058015 1,3-butylene glycol Drugs 0.000 description 1
- SRZXCOWFGPICGA-UHFFFAOYSA-N 1,6-Hexanedithiol Chemical compound SCCCCCCS SRZXCOWFGPICGA-UHFFFAOYSA-N 0.000 description 1
- PGTWZHXOSWQKCY-UHFFFAOYSA-N 1,8-Octanedithiol Chemical compound SCCCCCCCCS PGTWZHXOSWQKCY-UHFFFAOYSA-N 0.000 description 1
- GJRCLMJHPWCJEI-UHFFFAOYSA-N 1,9-Nonanedithiol Chemical compound SCCCCCCCCCS GJRCLMJHPWCJEI-UHFFFAOYSA-N 0.000 description 1
- FJLUATLTXUNBOT-UHFFFAOYSA-N 1-Hexadecylamine Chemical compound CCCCCCCCCCCCCCCCN FJLUATLTXUNBOT-UHFFFAOYSA-N 0.000 description 1
- ZRKMQKLGEQPLNS-UHFFFAOYSA-N 1-Pentanethiol Chemical compound CCCCCS ZRKMQKLGEQPLNS-UHFFFAOYSA-N 0.000 description 1
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 description 1
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- FETFXNFGOYOOSP-UHFFFAOYSA-N 1-sulfanylpropan-2-ol Chemical compound CC(O)CS FETFXNFGOYOOSP-UHFFFAOYSA-N 0.000 description 1
- GQCZPFJGIXHZMB-UHFFFAOYSA-N 1-tert-Butoxy-2-propanol Chemical compound CC(O)COC(C)(C)C GQCZPFJGIXHZMB-UHFFFAOYSA-N 0.000 description 1
- YACSJHHWQAXJNH-UHFFFAOYSA-N 10-sulfanyldecan-1-ol Chemical compound OCCCCCCCCCCS YACSJHHWQAXJNH-UHFFFAOYSA-N 0.000 description 1
- SCOCXONJTURWMB-UHFFFAOYSA-N 11-(trimethylazaniumyl)undecane-1-thiolate;hydrobromide Chemical compound [Br-].C[N+](C)(C)CCCCCCCCCCCS SCOCXONJTURWMB-UHFFFAOYSA-N 0.000 description 1
- LOQACAFAHHWTBJ-UHFFFAOYSA-N 11-aminoundecane-1-thiol;hydrochloride Chemical compound Cl.NCCCCCCCCCCCS LOQACAFAHHWTBJ-UHFFFAOYSA-N 0.000 description 1
- YXXLZBNUURBJQC-UHFFFAOYSA-N 11-azidoundecane-1-thiol Chemical compound SCCCCCCCCCCCN=[N+]=[N-] YXXLZBNUURBJQC-UHFFFAOYSA-N 0.000 description 1
- QBAITUUPZOBZFD-UHFFFAOYSA-N 11-imidazol-1-ylundecane-1-thiol Chemical compound SCCCCCCCCCCCN1C=CN=C1 QBAITUUPZOBZFD-UHFFFAOYSA-N 0.000 description 1
- GWOLZNVIRIHJHB-UHFFFAOYSA-N 11-mercaptoundecanoic acid Chemical compound OC(=O)CCCCCCCCCCS GWOLZNVIRIHJHB-UHFFFAOYSA-N 0.000 description 1
- JJDNIFVXOIKYCT-UHFFFAOYSA-N 11-pyrrol-1-ylundecane-1-thiol Chemical compound SCCCCCCCCCCCN1C=CC=C1 JJDNIFVXOIKYCT-UHFFFAOYSA-N 0.000 description 1
- ULGGZAVAARQJCS-UHFFFAOYSA-N 11-sulfanylundecan-1-ol Chemical compound OCCCCCCCCCCCS ULGGZAVAARQJCS-UHFFFAOYSA-N 0.000 description 1
- LBHLMQVBCVDGID-UHFFFAOYSA-N 11-sulfanylundecanamide Chemical compound NC(=O)CCCCCCCCCCS LBHLMQVBCVDGID-UHFFFAOYSA-N 0.000 description 1
- YOZNBMSWVPXLKM-UHFFFAOYSA-N 11-sulfanylundecyl 2,2,2-trifluoroacetate Chemical compound FC(F)(F)C(=O)OCCCCCCCCCCCS YOZNBMSWVPXLKM-UHFFFAOYSA-N 0.000 description 1
- VXLGFBKKMPMGST-UHFFFAOYSA-N 11-sulfanylundecylphosphonic acid Chemical compound OP(O)(=O)CCCCCCCCCCCS VXLGFBKKMPMGST-UHFFFAOYSA-N 0.000 description 1
- YAJYJWXEWKRTPO-UHFFFAOYSA-N 2,3,3,4,4,5-hexamethylhexane-2-thiol Chemical compound CC(C)C(C)(C)C(C)(C)C(C)(C)S YAJYJWXEWKRTPO-UHFFFAOYSA-N 0.000 description 1
- TWWSEEHCVDRRRI-UHFFFAOYSA-N 2,3-Butanedithiol Chemical compound CC(S)C(C)S TWWSEEHCVDRRRI-UHFFFAOYSA-N 0.000 description 1
- DYYJRXGKNZGOIX-UHFFFAOYSA-N 2-(11-sulfanylundecyl)benzene-1,4-diol Chemical compound OC1=CC=C(O)C(CCCCCCCCCCCS)=C1 DYYJRXGKNZGOIX-UHFFFAOYSA-N 0.000 description 1
- CMWCWAQFFDAKDP-UHFFFAOYSA-N 2-(4-sulfanylphenyl)benzonitrile Chemical compound C1=CC(S)=CC=C1C1=CC=CC=C1C#N CMWCWAQFFDAKDP-UHFFFAOYSA-N 0.000 description 1
- RWLALWYNXFYRGW-UHFFFAOYSA-N 2-Ethyl-1,3-hexanediol Chemical compound CCCC(O)C(CC)CO RWLALWYNXFYRGW-UHFFFAOYSA-N 0.000 description 1
- UCJMHYXRQZYNNL-UHFFFAOYSA-N 2-Ethyl-1-hexanethiol Chemical compound CCCCC(CC)CS UCJMHYXRQZYNNL-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- IDOQDZANRZQBTP-UHFFFAOYSA-N 2-[2-(2,4,4-trimethylpentan-2-yl)phenoxy]ethanol Chemical compound CC(C)(C)CC(C)(C)C1=CC=CC=C1OCCO IDOQDZANRZQBTP-UHFFFAOYSA-N 0.000 description 1
- HCZMHWVFVZAHCR-UHFFFAOYSA-N 2-[2-(2-sulfanylethoxy)ethoxy]ethanethiol Chemical compound SCCOCCOCCS HCZMHWVFVZAHCR-UHFFFAOYSA-N 0.000 description 1
- FASSFROSROBIBE-UHFFFAOYSA-N 2-[2-[2-(11-sulfanylundecoxy)ethoxy]ethoxy]ethanol Chemical compound OCCOCCOCCOCCCCCCCCCCCS FASSFROSROBIBE-UHFFFAOYSA-N 0.000 description 1
- MCINHQIUGNVTLG-UHFFFAOYSA-N 2-[2-[2-(2-sulfanylethoxy)ethoxy]ethoxy]ethanethiol Chemical compound SCCOCCOCCOCCS MCINHQIUGNVTLG-UHFFFAOYSA-N 0.000 description 1
- DMHSDYYORJTHAS-UHFFFAOYSA-N 2-[2-[2-[2-[2-(2-sulfanylethoxy)ethoxy]ethoxy]ethoxy]ethoxy]ethanethiol Chemical compound SCCOCCOCCOCCOCCOCCS DMHSDYYORJTHAS-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- 125000000143 2-carboxyethyl group Chemical group [H]OC(=O)C([H])([H])C([H])([H])* 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- TZYRSLHNPKPEFV-UHFFFAOYSA-N 2-ethyl-1-butanol Chemical compound CCC(CC)CO TZYRSLHNPKPEFV-UHFFFAOYSA-N 0.000 description 1
- CETWDUZRCINIHU-UHFFFAOYSA-N 2-heptanol Chemical compound CCCCCC(C)O CETWDUZRCINIHU-UHFFFAOYSA-N 0.000 description 1
- PFNHSEQQEPMLNI-UHFFFAOYSA-N 2-methyl-1-pentanol Chemical compound CCCC(C)CO PFNHSEQQEPMLNI-UHFFFAOYSA-N 0.000 description 1
- MSXVEPNJUHWQHW-UHFFFAOYSA-N 2-methylbutan-2-ol Chemical compound CCC(C)(C)O MSXVEPNJUHWQHW-UHFFFAOYSA-N 0.000 description 1
- MPBLPZLNKKGCGP-UHFFFAOYSA-N 2-methyloctane-2-thiol Chemical compound CCCCCCC(C)(C)S MPBLPZLNKKGCGP-UHFFFAOYSA-N 0.000 description 1
- ZMRFRBHYXOQLDK-UHFFFAOYSA-N 2-phenylethanethiol Chemical compound SCCC1=CC=CC=C1 ZMRFRBHYXOQLDK-UHFFFAOYSA-N 0.000 description 1
- GQJXVHYUQPXZOL-UHFFFAOYSA-N 3,3,4,4,5,5,6,6,6-nonafluorohexane-1-thiol Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)CCS GQJXVHYUQPXZOL-UHFFFAOYSA-N 0.000 description 1
- URJIJZCEKHSLHA-UHFFFAOYSA-N 3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecane-1-thiol Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CCS URJIJZCEKHSLHA-UHFFFAOYSA-N 0.000 description 1
- BRRVXFOKWJKTGG-UHFFFAOYSA-N 3,3,5-trimethylcyclohexanol Chemical compound CC1CC(O)CC(C)(C)C1 BRRVXFOKWJKTGG-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- TZCFWOHAWRIQGF-UHFFFAOYSA-N 3-chloropropane-1-thiol Chemical compound SCCCCl TZCFWOHAWRIQGF-UHFFFAOYSA-N 0.000 description 1
- DKIDEFUBRARXTE-UHFFFAOYSA-N 3-mercaptopropanoic acid Chemical compound OC(=O)CCS DKIDEFUBRARXTE-UHFFFAOYSA-N 0.000 description 1
- JSGVZVOGOQILFM-UHFFFAOYSA-N 3-methoxy-1-butanol Chemical compound COC(C)CCO JSGVZVOGOQILFM-UHFFFAOYSA-N 0.000 description 1
- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 description 1
- JHPVDDGUGQROJG-UHFFFAOYSA-N 4-(4-bromophenyl)benzenethiol Chemical group C1=CC(S)=CC=C1C1=CC=C(Br)C=C1 JHPVDDGUGQROJG-UHFFFAOYSA-N 0.000 description 1
- KDECGGARTQDFEI-UHFFFAOYSA-N 4-(4-phenylphenyl)benzenethiol Chemical compound C1=CC(S)=CC=C1C1=CC=C(C=2C=CC=CC=2)C=C1 KDECGGARTQDFEI-UHFFFAOYSA-N 0.000 description 1
- FOYJDMJLWTYTCC-UHFFFAOYSA-N 4-[2-(4-sulfanylphenyl)ethenyl]benzenethiol Chemical compound C1=CC(S)=CC=C1C=CC1=CC=C(S)C=C1 FOYJDMJLWTYTCC-UHFFFAOYSA-N 0.000 description 1
- HSAKNFPXLQYFIJ-UHFFFAOYSA-N 4-[4-(4-sulfanylphenyl)phenyl]benzenethiol Chemical compound C1=CC(S)=CC=C1C1=CC=C(C=2C=CC(S)=CC=2)C=C1 HSAKNFPXLQYFIJ-UHFFFAOYSA-N 0.000 description 1
- MQWCXKGKQLNYQG-UHFFFAOYSA-N 4-methylcyclohexan-1-ol Chemical compound CC1CCC(O)CC1 MQWCXKGKQLNYQG-UHFFFAOYSA-N 0.000 description 1
- KRVHFFQFZQSNLB-UHFFFAOYSA-N 4-phenylbenzenethiol Chemical compound C1=CC(S)=CC=C1C1=CC=CC=C1 KRVHFFQFZQSNLB-UHFFFAOYSA-N 0.000 description 1
- CWKJQOOWBBCVSE-UHFFFAOYSA-N 4-phenylcyclohexa-2,4-diene-1,1-dithiol Chemical compound C1=CC(S)(S)CC=C1C1=CC=CC=C1 CWKJQOOWBBCVSE-UHFFFAOYSA-N 0.000 description 1
- LMJXSOYPAOSIPZ-UHFFFAOYSA-N 4-sulfanylbenzoic acid Chemical compound OC(=O)C1=CC=C(S)C=C1 LMJXSOYPAOSIPZ-UHFFFAOYSA-N 0.000 description 1
- NEJMTSWXTZREOC-UHFFFAOYSA-N 4-sulfanylbutan-1-ol Chemical compound OCCCCS NEJMTSWXTZREOC-UHFFFAOYSA-N 0.000 description 1
- PABCJNLBWRWMLO-UHFFFAOYSA-N 5-sulfanylpentanenitrile Chemical compound SCCCCC#N PABCJNLBWRWMLO-UHFFFAOYSA-N 0.000 description 1
- BFCMUBZJTPADOD-UHFFFAOYSA-N 6-aminohexane-1-thiol;hydrochloride Chemical compound Cl.NCCCCCCS BFCMUBZJTPADOD-UHFFFAOYSA-N 0.000 description 1
- UGZAJZLUKVKCBM-UHFFFAOYSA-N 6-sulfanylhexan-1-ol Chemical compound OCCCCCCS UGZAJZLUKVKCBM-UHFFFAOYSA-N 0.000 description 1
- CMNQZZPAVNBESS-UHFFFAOYSA-N 6-sulfanylhexanoic acid Chemical compound OC(=O)CCCCCS CMNQZZPAVNBESS-UHFFFAOYSA-N 0.000 description 1
- CCWZBRKMJBSNQS-UHFFFAOYSA-N 8-aminooctane-1-thiol;hydrochloride Chemical compound Cl.NCCCCCCCCS CCWZBRKMJBSNQS-UHFFFAOYSA-N 0.000 description 1
- XJTWZETUWHTBTG-UHFFFAOYSA-N 8-sulfanyloctan-1-ol Chemical compound OCCCCCCCCS XJTWZETUWHTBTG-UHFFFAOYSA-N 0.000 description 1
- FYEMIKRWWMYBFG-UHFFFAOYSA-N 8-sulfanyloctanoic acid Chemical compound OC(=O)CCCCCCCS FYEMIKRWWMYBFG-UHFFFAOYSA-N 0.000 description 1
- FXFJFNVBVKPAPL-UHFFFAOYSA-N 9-sulfanylnonan-1-ol Chemical compound OCCCCCCCCCS FXFJFNVBVKPAPL-UHFFFAOYSA-N 0.000 description 1
- MXHVORUHWLKKMZ-UHFFFAOYSA-N 9h-fluoren-9-ylmethanethiol Chemical compound C1=CC=C2C(CS)C3=CC=CC=C3C2=C1 MXHVORUHWLKKMZ-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- NPTSISOUHBHVFQ-UHFFFAOYSA-N Cl.NCCCS.Cl.NCCCCCCCCCCCCCCCCS Chemical compound Cl.NCCCS.Cl.NCCCCCCCCCCCCCCCCS NPTSISOUHBHVFQ-UHFFFAOYSA-N 0.000 description 1
- 229910021592 Copper(II) chloride Inorganic materials 0.000 description 1
- VMQMZMRVKUZKQL-UHFFFAOYSA-N Cu+ Chemical compound [Cu+] VMQMZMRVKUZKQL-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- WVDYBOADDMMFIY-UHFFFAOYSA-N Cyclopentanethiol Chemical compound SC1CCCC1 WVDYBOADDMMFIY-UHFFFAOYSA-N 0.000 description 1
- HXQPUEQDBSPXTE-UHFFFAOYSA-N Diisobutylcarbinol Chemical compound CC(C)CC(O)CC(C)C HXQPUEQDBSPXTE-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- VPIAKHNXCOTPAY-UHFFFAOYSA-N Heptane-1-thiol Chemical compound CCCCCCCS VPIAKHNXCOTPAY-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910018828 PO3H2 Inorganic materials 0.000 description 1
- 241000282376 Panthera tigris Species 0.000 description 1
- RVGRUAULSDPKGF-UHFFFAOYSA-N Poloxamer Chemical compound C1CO1.CC1CO1 RVGRUAULSDPKGF-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- LEILPQLVBYGUCB-NCGGTJAESA-N SB1[B][B][C@@H]2[B][C@H]([B]1)[B][B][B][B][B]2 Chemical compound SB1[B][B][C@@H]2[B][C@H]([B]1)[B][B][B][B][B]2 LEILPQLVBYGUCB-NCGGTJAESA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NWGKJDSIEKMTRX-AAZCQSIUSA-N Sorbitan monooleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O NWGKJDSIEKMTRX-AAZCQSIUSA-N 0.000 description 1
- IYFATESGLOUGBX-YVNJGZBMSA-N Sorbitan monopalmitate Chemical compound CCCCCCCCCCCCCCCC(=O)OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O IYFATESGLOUGBX-YVNJGZBMSA-N 0.000 description 1
- HVUMOYIDDBPOLL-XWVZOOPGSA-N Sorbitan monostearate Chemical compound CCCCCCCCCCCCCCCCCC(=O)OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O HVUMOYIDDBPOLL-XWVZOOPGSA-N 0.000 description 1
- PRXRUNOAOLTIEF-ADSICKODSA-N Sorbitan trioleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCC\C=C/CCCCCCCC PRXRUNOAOLTIEF-ADSICKODSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- 229920004890 Triton X-100 Polymers 0.000 description 1
- 239000013504 Triton X-100 Substances 0.000 description 1
- 229920004929 Triton X-114 Polymers 0.000 description 1
- 229920004923 Triton X-15 Polymers 0.000 description 1
- 229920004896 Triton X-405 Polymers 0.000 description 1
- 229920004897 Triton X-45 Polymers 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- LWZFANDGMFTDAV-BURFUSLBSA-N [(2r)-2-[(2r,3r,4s)-3,4-dihydroxyoxolan-2-yl]-2-hydroxyethyl] dodecanoate Chemical compound CCCCCCCCCCCC(=O)OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O LWZFANDGMFTDAV-BURFUSLBSA-N 0.000 description 1
- JAWMENYCRQKKJY-UHFFFAOYSA-N [3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-ylmethyl)-1-oxa-2,8-diazaspiro[4.5]dec-2-en-8-yl]-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]methanone Chemical compound N1N=NC=2CN(CCC=21)CC1=NOC2(C1)CCN(CC2)C(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F JAWMENYCRQKKJY-UHFFFAOYSA-N 0.000 description 1
- HHHRERFRNRFXOV-UHFFFAOYSA-N [4-(6-sulfanylhexoxy)phenyl]methanol Chemical compound OCC1=CC=C(OCCCCCCS)C=C1 HHHRERFRNRFXOV-UHFFFAOYSA-N 0.000 description 1
- IYPNRTQAOXLCQW-UHFFFAOYSA-N [4-(sulfanylmethyl)phenyl]methanethiol Chemical compound SCC1=CC=C(CS)C=C1 IYPNRTQAOXLCQW-UHFFFAOYSA-N 0.000 description 1
- XFHIDPOTWOFDEM-UHFFFAOYSA-N [4-[4-(sulfanylmethyl)phenyl]phenyl]methanethiol Chemical group C1=CC(CS)=CC=C1C1=CC=C(CS)C=C1 XFHIDPOTWOFDEM-UHFFFAOYSA-N 0.000 description 1
- ZMDCFZNTOOSOBX-UHFFFAOYSA-N [6-[5-(sulfanylmethyl)pyridin-2-yl]pyridin-3-yl]methanethiol Chemical compound N1=CC(CS)=CC=C1C1=CC=C(CS)C=N1 ZMDCFZNTOOSOBX-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- ADJJLNODXLXTIH-UHFFFAOYSA-N adamantane-1-thiol Chemical compound C1C(C2)CC3CC2CC1(S)C3 ADJJLNODXLXTIH-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- 125000003282 alkyl amino group Chemical group 0.000 description 1
- 125000004448 alkyl carbonyl group Chemical group 0.000 description 1
- 125000004390 alkyl sulfonyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- XYXNTHIYBIDHGM-UHFFFAOYSA-N ammonium thiosulfate Chemical compound [NH4+].[NH4+].[O-]S([O-])(=O)=S XYXNTHIYBIDHGM-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- WYLQRHZSKIDFEP-UHFFFAOYSA-N benzene-1,4-dithiol Chemical compound SC1=CC=C(S)C=C1 WYLQRHZSKIDFEP-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 235000019437 butane-1,3-diol Nutrition 0.000 description 1
- SMTOKHQOVJRXLK-UHFFFAOYSA-N butane-1,4-dithiol Chemical compound SCCCCS SMTOKHQOVJRXLK-UHFFFAOYSA-N 0.000 description 1
- WQAQPCDUOCURKW-UHFFFAOYSA-N butanethiol Chemical compound CCCCS WQAQPCDUOCURKW-UHFFFAOYSA-N 0.000 description 1
- MGFFVSDRCRVHLC-UHFFFAOYSA-N butyl 3-sulfanylpropanoate Chemical compound CCCCOC(=O)CCS MGFFVSDRCRVHLC-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 125000002057 carboxymethyl group Chemical group [H]OC(=O)C([H])([H])[*] 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000004440 column chromatography Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- BWFPGXWASODCHM-UHFFFAOYSA-N copper monosulfide Chemical compound [Cu]=S BWFPGXWASODCHM-UHFFFAOYSA-N 0.000 description 1
- 229910000009 copper(II) carbonate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 1
- ZKXWKVVCCTZOLD-UHFFFAOYSA-N copper;4-hydroxypent-3-en-2-one Chemical compound [Cu].CC(O)=CC(C)=O.CC(O)=CC(C)=O ZKXWKVVCCTZOLD-UHFFFAOYSA-N 0.000 description 1
- GEZOTWYUIKXWOA-UHFFFAOYSA-L copper;carbonate Chemical compound [Cu+2].[O-]C([O-])=O GEZOTWYUIKXWOA-UHFFFAOYSA-L 0.000 description 1
- ZAOSPOSBUDIHMH-UHFFFAOYSA-N copper;n-hydroxy-n-phenylnitrous amide Chemical compound [Cu].O=NN(O)C1=CC=CC=C1 ZAOSPOSBUDIHMH-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000011646 cupric carbonate Substances 0.000 description 1
- 235000019854 cupric carbonate Nutrition 0.000 description 1
- CMKBCTPCXZNQKX-UHFFFAOYSA-N cyclohexanethiol Chemical compound SC1CCCCC1 CMKBCTPCXZNQKX-UHFFFAOYSA-N 0.000 description 1
- HPXRVTGHNJAIIH-UHFFFAOYSA-N cyclohexanol Chemical compound OC1CCCCC1 HPXRVTGHNJAIIH-UHFFFAOYSA-N 0.000 description 1
- JLQNHALFVCURHW-UHFFFAOYSA-N cyclooctasulfur Chemical compound S1SSSSSSS1 JLQNHALFVCURHW-UHFFFAOYSA-N 0.000 description 1
- JKOWKXHCMQEEQQ-UHFFFAOYSA-N cyclopenta-1,3-diene;11-cyclopenta-2,4-dien-1-ylundecane-1-thiol;iron(2+) Chemical compound [Fe+2].C=1C=C[CH-]C=1.SCCCCCCCCCCC[C-]1C=CC=C1 JKOWKXHCMQEEQQ-UHFFFAOYSA-N 0.000 description 1
- OPUQYSYDXPAUPW-UHFFFAOYSA-N cyclopenta-1,3-diene;6-cyclopenta-2,4-dien-1-ylhexane-1-thiol;iron(2+) Chemical compound [Fe+2].C=1C=C[CH-]C=1.SCCCCCC[C-]1C=CC=C1 OPUQYSYDXPAUPW-UHFFFAOYSA-N 0.000 description 1
- VTXVGVNLYGSIAR-UHFFFAOYSA-N decane-1-thiol Chemical compound CCCCCCCCCCS VTXVGVNLYGSIAR-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 125000004663 dialkyl amino group Chemical group 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- 125000001664 diethylamino group Chemical group [H]C([H])([H])C([H])([H])N(*)C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000004455 differential thermal analysis Methods 0.000 description 1
- IEJIGPNLZYLLBP-UHFFFAOYSA-N dimethyl carbonate Chemical compound COC(=O)OC IEJIGPNLZYLLBP-UHFFFAOYSA-N 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 238000010017 direct printing Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- UHKJHMOIRYZSTH-UHFFFAOYSA-N ethyl 2-ethoxypropanoate Chemical compound CCOC(C)C(=O)OCC UHKJHMOIRYZSTH-UHFFFAOYSA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000010946 fine silver Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 230000004313 glare Effects 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- XVEOUOTUJBYHNL-UHFFFAOYSA-N heptane-2,4-diol Chemical compound CCCC(O)CC(C)O XVEOUOTUJBYHNL-UHFFFAOYSA-N 0.000 description 1
- JSRUFBZERGYUAT-UHFFFAOYSA-N hexadecane-1,16-dithiol Chemical compound SCCCCCCCCCCCCCCCCS JSRUFBZERGYUAT-UHFFFAOYSA-N 0.000 description 1
- ORTRWBYBJVGVQC-UHFFFAOYSA-N hexadecane-1-thiol Chemical compound CCCCCCCCCCCCCCCCS ORTRWBYBJVGVQC-UHFFFAOYSA-N 0.000 description 1
- QNVRIHYSUZMSGM-UHFFFAOYSA-N hexan-2-ol Chemical compound CCCCC(C)O QNVRIHYSUZMSGM-UHFFFAOYSA-N 0.000 description 1
- ACCCMOQWYVYDOT-UHFFFAOYSA-N hexane-1,1-diol Chemical compound CCCCCC(O)O ACCCMOQWYVYDOT-UHFFFAOYSA-N 0.000 description 1
- OHMBHFSEKCCCBW-UHFFFAOYSA-N hexane-2,5-diol Chemical compound CC(O)CCC(C)O OHMBHFSEKCCCBW-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- JMMWKPVZQRWMSS-UHFFFAOYSA-N isopropanol acetate Natural products CC(C)OC(C)=O JMMWKPVZQRWMSS-UHFFFAOYSA-N 0.000 description 1
- 229940011051 isopropyl acetate Drugs 0.000 description 1
- GWYFCOCPABKNJV-UHFFFAOYSA-N isovaleric acid Chemical compound CC(C)CC(O)=O GWYFCOCPABKNJV-UHFFFAOYSA-N 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- 150000002605 large molecules Chemical class 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical compound CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 description 1
- XVTQAXXMUNXFMU-UHFFFAOYSA-N methyl 2-(3-oxo-2-pyridin-2-yl-1h-pyrazol-5-yl)acetate Chemical compound N1C(CC(=O)OC)=CC(=O)N1C1=CC=CC=N1 XVTQAXXMUNXFMU-UHFFFAOYSA-N 0.000 description 1
- LDTLDBDUBGAEDT-UHFFFAOYSA-N methyl 3-sulfanylpropanoate Chemical compound COC(=O)CCS LDTLDBDUBGAEDT-UHFFFAOYSA-N 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- 125000000250 methylamino group Chemical group [H]N(*)C([H])([H])[H] 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- YKYONYBAUNKHLG-UHFFFAOYSA-N n-Propyl acetate Natural products CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 1
- CKRXZOZYQYDWIQ-UHFFFAOYSA-N n-nonyl-3-sulfanylpropanamide Chemical compound CCCCCCCCCNC(=O)CCS CKRXZOZYQYDWIQ-UHFFFAOYSA-N 0.000 description 1
- SEXOVMIIVBKGGM-UHFFFAOYSA-N naphthalene-1-thiol Chemical compound C1=CC=C2C(S)=CC=CC2=C1 SEXOVMIIVBKGGM-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- ZCYXXKJEDCHMGH-UHFFFAOYSA-N nonane Chemical compound CCCC[CH]CCCC ZCYXXKJEDCHMGH-UHFFFAOYSA-N 0.000 description 1
- ZVEZMVFBMOOHAT-UHFFFAOYSA-N nonane-1-thiol Chemical compound CCCCCCCCCS ZVEZMVFBMOOHAT-UHFFFAOYSA-N 0.000 description 1
- BKIMMITUMNQMOS-UHFFFAOYSA-N normal nonane Natural products CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 1
- LJLJPBMSWIYGOA-UHFFFAOYSA-N octadec-9-ene-1-thiol Chemical compound CCCCCCCCC=CCCCCCCCCS LJLJPBMSWIYGOA-UHFFFAOYSA-N 0.000 description 1
- QJAOYSPHSNGHNC-UHFFFAOYSA-N octadecane-1-thiol Chemical compound CCCCCCCCCCCCCCCCCCS QJAOYSPHSNGHNC-UHFFFAOYSA-N 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- SJWFXCIHNDVPSH-UHFFFAOYSA-N octan-2-ol Chemical compound CCCCCCC(C)O SJWFXCIHNDVPSH-UHFFFAOYSA-N 0.000 description 1
- OEIJHBUUFURJLI-UHFFFAOYSA-N octane-1,8-diol Chemical compound OCCCCCCCCO OEIJHBUUFURJLI-UHFFFAOYSA-N 0.000 description 1
- KZCOBXFFBQJQHH-UHFFFAOYSA-N octane-1-thiol Chemical compound CCCCCCCCS KZCOBXFFBQJQHH-UHFFFAOYSA-N 0.000 description 1
- 229920002113 octoxynol Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- IGMQODZGDORXEN-UHFFFAOYSA-N pentadecane-1-thiol Chemical compound CCCCCCCCCCCCCCCS IGMQODZGDORXEN-UHFFFAOYSA-N 0.000 description 1
- JYVLIDXNZAXMDK-UHFFFAOYSA-N pentan-2-ol Chemical compound CCCC(C)O JYVLIDXNZAXMDK-UHFFFAOYSA-N 0.000 description 1
- KMTUBAIXCBHPIZ-UHFFFAOYSA-N pentane-1,5-dithiol Chemical compound SCCCCCS KMTUBAIXCBHPIZ-UHFFFAOYSA-N 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- 150000003008 phosphonic acid esters Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920001993 poloxamer 188 Polymers 0.000 description 1
- 229920001992 poloxamer 407 Polymers 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920006290 polyethylene naphthalate film Polymers 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- ZJLMKPKYJBQJNH-UHFFFAOYSA-N propane-1,3-dithiol Chemical compound SCCCS ZJLMKPKYJBQJNH-UHFFFAOYSA-N 0.000 description 1
- 229940090181 propyl acetate Drugs 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 235000011067 sorbitan monolaureate Nutrition 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000002336 sorption--desorption measurement Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- OGYIYYJTAFMIMX-UHFFFAOYSA-N sulfanylidenecopper pentahydrate Chemical compound O.O.O.O.O.[Cu]=S OGYIYYJTAFMIMX-UHFFFAOYSA-N 0.000 description 1
- 125000000565 sulfonamide group Chemical group 0.000 description 1
- 150000003463 sulfur Chemical class 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- WMXCDAVJEZZYLT-UHFFFAOYSA-N tert-butylthiol Chemical compound CC(C)(C)S WMXCDAVJEZZYLT-UHFFFAOYSA-N 0.000 description 1
- GEKDEMKPCKTKEC-UHFFFAOYSA-N tetradecane-1-thiol Chemical compound CCCCCCCCCCCCCCS GEKDEMKPCKTKEC-UHFFFAOYSA-N 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- 238000002042 time-of-flight secondary ion mass spectrometry Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910021654 trace metal Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- MDYZKJNTKZIUSK-UHFFFAOYSA-N tyloxapol Chemical compound O=C.C1CO1.CC(C)(C)CC(C)(C)C1=CC=C(O)C=C1 MDYZKJNTKZIUSK-UHFFFAOYSA-N 0.000 description 1
- ODMTYGIDMVZUER-UHFFFAOYSA-N undecane-1,11-dithiol Chemical compound SCCCCCCCCCCCS ODMTYGIDMVZUER-UHFFFAOYSA-N 0.000 description 1
- CCIDWXHLGNEQSL-UHFFFAOYSA-N undecane-1-thiol Chemical compound CCCCCCCCCCCS CCIDWXHLGNEQSL-UHFFFAOYSA-N 0.000 description 1
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/097—Inks comprising nanoparticles and specially adapted for being sintered at low temperature
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D17/00—Pigment pastes, e.g. for mixing in paints
- C09D17/004—Pigment pastes, e.g. for mixing in paints containing an inorganic pigment
- C09D17/007—Metal oxide
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
- B22F1/0545—Dispersions or suspensions of nanosized particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/102—Metallic powder coated with organic material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/14—Treatment of metallic powder
- B22F1/145—Chemical treatment, e.g. passivation or decarburisation
- B22F1/147—Making a dispersion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L71/00—Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
- C08L71/02—Polyalkylene oxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D17/00—Pigment pastes, e.g. for mixing in paints
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D17/00—Pigment pastes, e.g. for mixing in paints
- C09D17/004—Pigment pastes, e.g. for mixing in paints containing an inorganic pigment
- C09D17/006—Metal
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D171/00—Coating compositions based on polyethers obtained by reactions forming an ether link in the main chain; Coating compositions based on derivatives of such polymers
- C09D171/02—Polyalkylene oxides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D201/00—Coating compositions based on unspecified macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/24—Electrically-conducting paints
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/45—Anti-settling agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/66—Additives characterised by particle size
- C09D7/67—Particle size smaller than 100 nm
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
- C09D7/66—Additives characterised by particle size
- C09D7/68—Particle size between 100-1000 nm
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
- H01B13/0036—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
- B22F2007/042—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method
- B22F2007/047—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method non-pressurised baking of the paste or slurry containing metal powder
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
- C08K2003/0806—Silver
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2248—Oxides; Hydroxides of metals of copper
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/001—Conductive additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/005—Additives being defined by their particle size in general
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/011—Nanostructured additives
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0263—Details about a collection of particles
- H05K2201/0269—Non-uniform distribution or concentration of particles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
Definitions
- the present invention relates to a dispersion.
- the circuit board has a structure in which conductive wiring is provided on the board.
- a circuit board is a part that is not coated with a resist after a photoresist coated on a metal foil-laminated substrate is processed into a negative shape of a desired circuit pattern by exposure and development. The metal foil was removed by chemical etching to form a pattern.
- a high-performance conductive substrate can be manufactured.
- the conventional method of manufacturing a circuit board has a number of steps, is complicated, and has disadvantages such as requiring a photoresist material.
- a method of passing a step of directly printing a desired wiring pattern on a substrate using a paint in which fine particles selected from the group consisting of metals and metal oxides are dispersed has attracted attention. According to such a method for manufacturing a circuit board, the number of steps is reduced, and it is not necessary to use a photoresist material, so that extremely high productivity is expected.
- the printing method the following two problems may occur. First, according to the printing method, it is generally difficult to form fine wiring. Secondly, according to the printing method, since a high-temperature baking process is required to impart conductivity to the printed pattern, it is difficult to form a conductive thin film on a substrate having low heat resistance. The details will be described below.
- the first problem is as follows.
- a technique using a dispersion containing metal or metal oxide nanoparticles as an ink for forming a fine pattern by a printing method has attracted attention.
- a dispersion containing particles having a large particle size is used as the ink used for printing, the edges and surface of the coating film become uneven, and fine patterning cannot be performed.
- the surface roughness of the coating film is large, there is a possibility of adversely affecting the characteristics of the material printed by being laminated on the coating film, and therefore the smoothness of the coating film is important. In this respect, if the nanoparticle is used, the edge and surface of the coating film become smooth and fine patterning becomes possible.
- NPS-J-HP silver nano ink
- subfemtoliter ink jet printing has a very slow printing speed and is therefore unsuitable as a technique for mass production.
- L / S indicates a line / space.
- a line refers to the line width of the printed material
- a space refers to the width of a region where no ink is present between the lines of the printed material.
- L / S 1 ⁇ m / 1 ⁇ m means that the line width is 1 ⁇ m and the width between the lines is 1 ⁇ m.
- this Patent Document 1 does not disclose a specific measure against deterioration of coating film smoothness during drying due to crystallization of a water-soluble resin that is solid at room temperature in a coating film.
- Patent Document 1 does not disclose specific measures for improving dispersibility and long-term storage stability.
- Patent Document 2 an organic material containing conductive particles having a volume average particle diameter (Mv) of 2 to 250 nm, a fluorine-based surface energy adjusting agent and / or a silicone-based surface energy adjusting agent, and 0.5 to 40% by weight of water.
- Mv volume average particle diameter
- the second problem is as follows.
- the fine particles dispersed in the paint are often selected from silver, gold, copper, and oxides thereof.
- fine particles containing at least one selected from the group consisting of copper and copper oxide are particularly suitable because they are inexpensive.
- Patent Document 3 proposes a cuprous oxide dispersion containing cuprous oxide fine particles having an average secondary particle size of 80 nm or less and a polyhydric alcohol having 10 or less carbon atoms. The dispersion was applied on a glass plate and heat treated at 350 ° C. for 1 hour to form a copper thin film having a thickness of 2.5 ⁇ m and a volume resistivity of 8 ⁇ 10 ⁇ 5 ⁇ cm (Patent Document 3, See Examples 3 and 6).
- Patent Document 4 proposes a copper oxide nanoparticle dispersion coated with a protective agent. For example, a copper oxide nanoparticle dispersion using dodecylamine as a protective agent is applied on a glass plate and subjected to a heat treatment at 250 ° C. for 60 minutes, whereby an average film thickness of 1 ⁇ m and a volume resistivity of 6 ⁇ 10 ⁇ 6. A copper thin film of ⁇ cm is formed (see Patent Document 4 and Example 1).
- Patent Document 5 proposes a metal fine particle dispersion containing metal fine particles, a polymer dispersant, and a dispersion medium.
- a polymer dispersant having a polyester skeleton or a polyether skeleton is easily decomposed by plasma treatment, and when the dispersion of Patent Document 3 containing the dispersant is used, the resistance of the formed copper thin film becomes low. Has been suggested.
- Patent Document 5 since a high temperature of 160 ° C. or higher is applied to the base material during firing, a copper thin film is formed on a very inexpensive base material having low heat resistance such as a polyethylene terephthalate (PET) film. I can't do it. That is, in order to apply the technique of Patent Document 3, an expensive base material must be used, and thus there is a problem that an inexpensive printing device cannot be realized.
- PET polyethylene terephthalate
- the first problem to be solved by the present invention includes particles containing at least one selected from the group consisting of metals and metal oxides, and is suitable for reversal printing, smoothness of coating film, dispersibility, and It is to provide a dispersion having excellent long-term storage stability.
- the second problem to be solved by the present invention is to provide a dispersion capable of forming a low-resistance copper thin film without damaging a substrate having low heat resistance such as a PET film due to high temperature.
- the present inventors diligently researched and conducted experiments in order to achieve the above-mentioned problems.
- the inventors In a dispersion containing fine particles and a dispersant, the inventors have found that the above-mentioned problems can be achieved by using a dispersant having a specific molecular weight distribution, and based on this, the present invention has been completed. Is.
- the present invention discloses the following matters.
- a dispersion comprising particles selected from metal particles and metal oxide particles, and a dispersant
- the dispersant has a chemical structure capable of binding or adsorbing to the particles; and
- the dispersant is a low molecular weight dispersant having at least one peak in a region having a molecular weight of 31 or more and less than 1,000, and a molecular weight of 1,000 or more and 40 or more.
- a high molecular weight dispersant having at least one peak in a region of 1,000 or less.
- the chemical structure capable of binding or adsorbing to the particles is an amino group, a thiol group, a phosphonic acid group, a phosphonic acid ester group, a functional group having a succinimide skeleton, a functional group having a pyrrolidone skeleton, a selenol group, a polysulfide group,
- the dispersion according to [1] which is at least one functional group selected from the group consisting of a polyselenide group, a carboxyl group, a functional group having an acid anhydride skeleton, a sulfonic acid group, a nitro group, and a cyano group.
- the low molecular weight dispersant has at least one peak in a region having a molecular weight of 350 or more and less than 1,000 in a molecular weight distribution curve in terms of polyethylene glycol measured by gel permeation chromatography [1] or [2 ] The dispersion as described in above. [4] The dispersion according to any one of [1] to [3], wherein a ratio of the high molecular weight dispersant to 5 parts by weight or more and 500 parts by weight or less with respect to 100 parts by weight of the low molecular weight dispersant in the dispersant. Agent.
- the proportion of the low molecular weight dispersant is 1 to 20 parts by mass
- the dispersant according to any one of [1] to [4], wherein the proportion of the high molecular weight dispersant is 0.1 to 10 parts by mass.
- a method for producing a conductive film comprising: [10] The method for manufacturing a conductive film according to [9], wherein the heating step is performed by plasma treatment, flash lamp annealing treatment, or contact treatment with a heat medium.
- a film comprising particles selected from metal particles and metal oxide particles, and a dispersant, The dispersing agent has a chemical structure capable of binding or adsorbing to the particles, and the dispersing agent has a molecular weight of 31 or more and less than 1,000 in a molecular weight distribution curve in terms of polyethylene glycol measured by gel permeation chromatography.
- the membrane comprising: a low molecular weight dispersant having at least one peak in a region; and a high molecular weight dispersant having at least one peak in a region having a molecular weight of 1,000 to 40,000.
- particles containing one or more selected from the group consisting of copper and copper oxide One or more sulfur atom-containing materials selected from the group consisting of a compound having a —SH group, a simple sulfur atom, and a compound having a structure in which a plurality of sulfur atoms are continuously bonded;
- the present invention contains particles containing one or more selected from the group consisting of metals and metal oxides, and is suitable for reversal printing, coating film smoothness, dispersibility, and long-term storage stability. A dispersion excellent in all of the above can be obtained. Furthermore, according to the present invention, secondly, it is possible to obtain a dispersion capable of forming a low-resistance conductive thin film without damaging a substrate having low heat resistance due to high temperature.
- FIG. 1 A is the dispersion coating film surface of Example 1-1
- (b) is the dispersion coating film surface of Example 2
- (c) is the dispersion coating film surface of Example 1-4
- (d) is 6 is a photomicrograph of the surface of a dispersion coating film of Example 5.
- (A) is the surface of the dispersion coating film of Comparative Example 1-2
- (b) is the surface of the dispersion coating film of Comparative Example 3
- (c) is a photomicrograph of the surface of the dispersion coating film of Comparative Example 1-4.
- (A) is a photomicrograph of the surface of the printed matter obtained in Comparative Example 1-1 and having a defective removal.
- (B) is a photomicrograph of the surface of a good printed product obtained in Example 1-1.
- 2 is a cross-sectional SEM image of the conductive film obtained in Example 1-1.
- 2 is a cross-sectional SEM image of a conductive film obtained in Comparative Example 1-1.
- 4 is a GPC chart of a dispersant contained in a coating film obtained in Example 1-3.
- 6 is a graph showing a profile in the depth direction of the relative element concentration of the conductive film obtained in Example 1-1.
- the dispersion of the present embodiment contains particles selected from metal particles and metal oxide particles, and a dispersant.
- the dispersion of the present embodiment contains particles selected from metal particles and metal oxide particles, and a sulfur atom-containing material.
- the particles in the dispersion of this embodiment are selected from metal particles and metal oxide particles.
- the metal and metal oxide in the particle are selected from the group consisting of gold, silver, copper, nickel, cobalt, tin, lead, indium, aluminum, zirconium, cerium, hafnium, and magnesium, and oxides of these metals. Fine particles containing one or more of the above can be used.
- copper and copper oxide are preferable because they are inexpensive and can form wiring with low resistance by baking.
- Specific examples of copper and copper oxide include, for example, particles made of copper, cuprous oxide, cupric oxide, copper oxide having other oxidation numbers, and the like. Examples thereof include particles having a core / shell structure in which the core part is copper and the shell part is copper oxide.
- cuprous oxide and cupric oxide are preferable because dispersibility tends to be excellent.
- Cuprous oxide is particularly preferred because it tends to be sintered at low temperature.
- These may contain metal salts or metal complexes or both as minor amounts of impurities. These may be used singly or in combination of two or more.
- the average secondary particle size of the particles contained in the dispersion according to this embodiment is not particularly limited. However, it is preferably 1,000 nm or less, more preferably 500 nm or less, still more preferably 200 nm or less, and particularly preferably 80 nm or less.
- the average secondary particle size of the particles is preferably 5 nm or more, more preferably 15 nm or more, and further preferably 20 nm or more.
- the average secondary particle size is the average particle size of aggregates (secondary particles) formed by collecting a plurality of primary particles. It is preferable that the average secondary particle diameter is 1,000 nm or less because a fine pattern tends to be easily formed on the substrate.
- An average secondary particle size of 5 nm or more is preferable because long-term storage stability of the dispersion is improved.
- the average secondary particle diameter of the fine particles can be measured by a cumulant method using, for example, FPAR-1000 manufactured by Otsuka Electronics.
- the preferable range of the average primary particle size of the primary particles constituting the secondary particles is 100 nm or less, more preferably 50 nm or less, still more preferably 20 nm or less.
- the average primary particle size is preferably 1 nm or more, more preferably 2 nm or more, and further preferably 5 nm or more.
- the average primary particle size is 100 nm or less, the firing temperature described later tends to be lowered. The reason why such low-temperature firing is possible is considered to be that the smaller the particle diameter, the greater the surface energy and the lower the melting point.
- the average primary particle size is 1 nm or more because good dispersibility can be obtained.
- the average primary particle size can be measured with a transmission electron microscope or a scanning electron microscope.
- the content ratio of the particles in the dispersion according to this embodiment is preferably 0.50% by mass or more and 70% by mass or less, more preferably 1.0 to 60% by mass, and still more preferably, with respect to the total amount of the dispersion. Is 5.0 to 50% by mass. If the content is 70% by mass or less, the aggregation of particles tends to be easily suppressed. When the content is 0.50% by mass or more, the conductive film obtained by firing is not excessively thin and the conductivity tends to be favorable, which is preferable.
- the particles in the present embodiment commercially available products may be used, or synthetic products may be used.
- Examples of commercially available products include cupric oxide fine particles having an average primary particle size of 50 nm manufactured by CIK Nanotech.
- Examples of the synthesis method include the following methods. (1) Water and copper acetylacetonate complex are added to a polyol solvent, and the organic copper compound is once heated and dissolved. Then, an amount of water necessary for the reaction is added afterwards, and the temperature is further increased. A method of reducing by heating at a reduction temperature. (2) A method in which an organic copper compound (copper-N-nitrosophenylhydroxylamine complex) is heated at a high temperature of about 300 ° C. in an inert atmosphere in the presence of a protective agent such as hexadecylamine. (3) A method of reducing a copper salt dissolved in an aqueous solution with hydrazine.
- the method (1) can be carried out under the conditions described in, for example, Angelevante Chemi International Edition, No. 40, Vol. 2, p. 359, 2001.
- the method of (2) is described, for example, in Journal of American Chemical Society 1999, 121, p. It can be carried out under the conditions described in 11595.
- a divalent copper salt can be suitably used as the copper salt.
- examples thereof include copper (II) acetate, copper (II) nitrate, copper (II) carbonate, Examples thereof include copper (II) chloride and copper (II) sulfate.
- the amount of hydrazine used is preferably 0.2 mol to 2 mol, more preferably 0.25 mol to 1.5 mol, per 1 mol of copper salt.
- a water-soluble organic compound may be added to the aqueous solution in which the copper salt is dissolved. Since the melting point of the aqueous solution is lowered by adding a water-soluble organic compound to the aqueous solution, reduction at a lower temperature is possible.
- the water-soluble organic compound for example, alcohol, water-soluble polymer and the like can be used.
- the alcohol for example, methanol, ethanol, propanol, butanol, hexanol, octanol, decanol, ethylene glycol, propylene glycol, glycerin and the like can be used.
- the water-soluble polymer for example, polyethylene glycol, polypropylene glycol, polyethylene glycol-polypropylene glycol copolymer and the like can be used.
- the temperature at the time of reduction in the method (3) can be, for example, ⁇ 20 to 60 ° C., and preferably ⁇ 10 to 30 ° C. This reduction temperature may be constant during the reaction, or may be raised or lowered during the reaction.
- the reduction is preferably 10 ° C. or less, and more preferably 0 ° C. or less.
- the reduction time is preferably 30 minutes to 300 minutes, more preferably 90 minutes to 200 minutes.
- the atmosphere during the reduction is preferably an inert atmosphere such as nitrogen or argon. Among these, the method (3) is preferable because the operation is simple and particles having a small particle diameter can be obtained.
- the dispersion according to the first aspect of the dispersion of the present embodiment contains a dispersant for the purpose of improving reverse printing suitability and coating film smoothness and improving long-term storage stability.
- a dispersant for the purpose of improving reverse printing suitability and coating film smoothness and improving long-term storage stability.
- the dispersant will be described in detail.
- the dispersant in the present embodiment has a chemical structure that can be bonded or adsorbed to the above particles.
- a preferred dispersant in the present embodiment has a main skeleton and a chemical structure that can be bonded or adsorbed to the particles (hereinafter also referred to as “binding structure”).
- FIG. 2 schematically shows how such a dispersant functions in the dispersion according to this embodiment.
- the large circle at the center is a particle containing one or more selected from the group consisting of metal and metal oxide particles.
- the dispersant is presumed that the main skeleton shown by the curve is bound or adsorbed to the particles via the binding structure shown by the square.
- the long-term storage stability of the dispersion is improved. It is assumed that it can be done.
- the main skeleton of the dispersant bonded or adsorbed to the particles can be entangled with each other, thereby improving the strength of the coating film. Can be improved.
- Bonding or adsorption means hydrogen bonding, covalent bonding, metal bonding, ionic bonding, coordination bonding, intermolecular force, hydrophobic interaction, hydrophilic interaction, ⁇ - ⁇ interaction, ⁇ - ⁇ interaction between two substances, It refers to a state where some kind of attractive force such as electronic interaction is working.
- the structure of the dispersant is not particularly limited.
- a straight chain structure as shown in FIG. A branched structure as shown in FIG.
- a graft polymer-like structure having a binding structure in the side chain as shown in FIG. As shown in FIG. 1 (d), the structure may have a binding structure at each end of the star polymer; A structure formed by combining a plurality of these structures may be used.
- binding structure in the dispersant examples include amino groups, thiol groups, phosphonic acid groups, phosphonic acid ester groups, functional groups having a succinimide skeleton, functional groups having a pyrrolidone skeleton, selenol groups, polysulfide groups, polyselenide groups, and carboxyls.
- a functional group having an acid anhydride skeleton, a sulfonic acid group, a nitro group, a cyano group, and the like a structure represented by the following chemical formula may be used.
- n is an integer of 1 or more
- X is the main skeleton of the dispersant
- R is a functional group.
- the functional group represented by R in the above chemical formula include hydrogen, halogen, alkyl groups (eg, methyl group, isopropyl group, tertiary butyl group, etc.), aryl groups (eg, phenyl group, naphthyl group, thienyl group, etc.) Haloaryl groups (eg pentafluorophenyl group, 3-fluorophenyl group, 3,4,5-trifluorophenyl group etc.), alkenyl groups, alkynyl groups, amide groups, acyl groups, alkoxy groups (eg methoxy group etc.), Aryloxy group (eg, phenoxy group, naphthyl group, etc.), haloalkyl group (eg, perfluoroalkyl group, etc.), thiocyano group, hydroxyl
- the chemical structure capable of binding or adsorbing to the above particles includes amino group, thiol group, phosphonic acid group, phosphonic acid ester group, functional group having succinimide skeleton, functional group having pyrrolidone skeleton, selenol group,
- One or more functional groups selected from the group consisting of a polysulfide group, a polyselenide group, a carboxyl group, a functional group having an acid anhydride skeleton, a sulfonic acid group, a nitro group, and a cyano group are preferred.
- a structure selected from an amino group, a functional group having a pyrrolidone skeleton, a nitro group, and a thiol group can be preferably used from the viewpoint of long-term storage stability.
- the particle contains one or more selected from copper and copper oxide, a functional group having a succinimide skeleton, a thiol group, a carboxylic acid group, a sulfonic acid group, a phosphonic acid group, and a phosphonic acid ester, nitro
- a structure selected from the group can be suitably used from the viewpoint of long-term storage stability.
- a binding structure composed of a thiol group is more preferable because it has an effect of reducing the resistance value of the obtained conductive film.
- the content ratio of the binding structure in the dispersant is 2.5 ⁇ 10 ⁇ 5 to 0.030 mol / g as the total number of moles of functional groups of the binding structure contained in the dispersant. Preferably, it is 1.0 ⁇ 10 ⁇ 4 to 0.0030 mol / g, more preferably 2.5 ⁇ 10 ⁇ 4 to 0.0010 mol / g.
- the number of binding structures contained in one molecule of the dispersant is preferably 1 or more and 100 or less, more preferably 1 or more and 20 or less, and 1 or more and 10 or less. Is more preferable. When too many binding structures are contained in one molecule of the dispersant, the particles tend to crosslink and aggregate.
- the number of binding structures contained in one molecule of the dispersant is 100 or less, sufficient dispersibility can be obtained, and if it is 20 or less, the particles do not aggregate and the secondary particle size is reduced. If the number is 10 or less, the bond between the particles and the dispersant can be dissociated with relatively small energy, so that the sintering is promoted.
- Examples of the main skeleton of the dispersant include polyethylene glycol (PEG), polypropylene glycol (PPG), polyimide, polyethylene terephthalate (PET), polyethersulfone (PES), polyethylene naphthalate (PEN), polyester, polycarbonate (PC ), Polyvinyl alcohol (PVA), polyvinyl butyral (PVB), polyacetal, polyarylate (PAR), polyamide (PA), polyamideimide (PAI), polyetherimide (PEI), polyphenylene ether (PPE), polyphenylene sulfide (PPS) ), Polyether ketone (PEK), polyphthalamide (PPA), polyether nitrile (PEN), polybenzimidazole (PBI), polycarbodiimide, Siloxanes, poly methacrylamide, nitrile rubber, acrylic rubber, polyethylene tetrafluoride, epoxy resins, phenolic resins, melamine resins, urea resins, polymethyl methacrylate resins
- Polybutene polypentene, ethylene-propylene copolymer, ethylene-butene-diene copolymer, polybutadiene, polyisoprene, ethylene-propylene-diene copolymer, butyl rubber, polymethylpentene (PMP), polystyrene (PS), styrene- Butadiene copolymer, polyethylene (PE), polyvinyl chloride (PVC), polyvinylidene fluoride (PVDF), polyetheretherketone (PEEK), phenol novolac, benzocyclobutene, polyvinylphenol, polychloropyrene, polyoxymethylene, polysulfone (PSF), polysulfide, silicone resin and the like can be used.
- PMP polymethylpentene
- PS polystyrene
- PEEK polyetheretherketone
- a dispersant having a skeleton selected from a polyethylene glycol skeleton, a polypropylene glycol skeleton, a polyacetal skeleton, a polybutene skeleton, and a polysulfide skeleton is preferable because it easily decomposes and does not easily leave a residue in the conductive film obtained after firing.
- a dispersant having a skeleton selected from polyethylene glycol and polypropylene glycol is more preferable because it does not easily penetrate into the printing plate and the printing plate is hardly deformed by swelling.
- the printing plate includes a removal plate, a blanket, and the like used for reverse printing described later. In the main skeleton of the dispersant, these may be present alone or a copolymer thereof may be present.
- the dispersant may further have a functional group separately from the main skeleton and the binding structure.
- the functional group include a halogen, an alkyl group (for example, methyl group, isopropyl group, tertiary butyl group, etc.), an aryl group (for example, phenyl group, naphthyl group, thienyl group, etc.), a haloaryl group (for example, pentafluorophenyl group).
- the dispersant is a molecular weight distribution curve in terms of polyethylene glycol measured by gel permeation chromatography (GPC).
- GPC gel permeation chromatography
- peak means a clear peak in which the slope (value obtained by differentiating the intensity value on the vertical axis with the molecular weight on the horizontal axis) in the molecular weight distribution curve changes from a positive value to a negative value through zero.
- the so-called “shoulder” in which the sign of the slope of the molecular weight distribution curve does not change is not included.
- One peak may exist in each of the above regions, or a plurality of peaks may exist in either or both of the above regions.
- the dispersing agent contains a low molecular weight dispersing agent having a molecular weight of 31 or more and less than 1,000, since crystallization of the coating film is prevented and good smoothness can be obtained.
- the molecular weight of this low molecular weight dispersing agent is more preferably 900 or less, since it is possible to dissociate loosely agglomerated particles and improve the dispersibility of the particles, and more preferably 800 or less. It is further preferable in order to improve smoothness. If the molecular weight of the low molecular weight dispersant is 31 or more, a high wetting effect on the particles can be obtained, so that the dispersibility is improved. If the molecular weight is 70 or more, it is more preferable because good dispersibility is obtained. If it exists, it is more preferable in order to improve the storage stability by long-term storage.
- the dispersant contains a high molecular weight dispersant having a molecular weight of 1,000 or more and 40,000 or less because the strength of the coating film is improved and the removability during reverse printing is improved. If the molecular weight of the high molecular weight dispersant is 1,500 or more, the steric hindrance of the dispersant bonded or adsorbed to the particles can prevent the particles from aggregating to obtain long-term storage stability. More preferred.
- the molecular weight of this high molecular weight dispersant is If it is 40,000 or less, the dispersant is preferably dissolved in a solvent, and the concentration of the particles and the dispersant can be increased. If it is 20,000 or less, it is more preferable because long-term storage stability is improved; If it is 7,000 or less, since high dispersibility can be obtained, it is still more preferable.
- a low molecular weight dispersant and a high molecular weight dispersant are found in a molecular weight distribution curve in terms of polyethylene glycol measured by GPC.
- the GPC measurement conditions are, for example, as follows.
- GPC may be measured using a dispersant as a sample, or a dispersion containing components other than the dispersant as a sample.
- a pretreatment may be added to the dispersion.
- the dispersant can be isolated from the dispersion, which is preferable.
- the pretreatment methods include extraction, distillation, concentration, dilution, pH adjustment, acid addition, base addition, filtration, flocculant addition, heating and drying, cooling, vacuum drying, buffer addition, Ion exchange, centrifugation, etc. can be used. These sub-treatments may be performed alone or in combination with a plurality of these sub-treatments.
- the present pretreatment method is a method for performing GPC measurement after dissolving particles of metal or metal oxide by adding acid to a dispersion.
- the acid added to the dispersion include sulfuric acid, nitric acid, oxalic acid, acetic acid, hydrochloric acid and the like.
- the metal ions in the obtained solution may be exchanged with other ionic species by an ion exchange resin.
- other ionic species for example, hydrogen, sodium, calcium, potassium, or the like can be used. You may use for a measurement, after adding a base to the solution after adding an acid and neutralizing a solution.
- Examples of the base in this case include sodium hydroxide, potassium hydroxide, calcium hydroxide, calcium carbonate, sodium carbonate, sodium hydrogen carbonate and the like.
- a precipitate is generated by the above treatment, it is preferable to use the precipitate after filtration for measurement.
- a solvent that is not miscible with the solvent of the dispersion is added to the acid solution, and the organic component is extracted into the solvent.
- the present pretreatment method is a method of performing GPC measurement after dissociating the bond between the metal or metal oxide particles and the dispersant by adding a base to the dispersion.
- the dispersant in the dispersion has an acidic structure such as carboxylic acid, phosphonic acid, or sulfonic acid
- the bond between the particles and the dispersant can be dissociated by adding a base to the dispersion.
- This is a method of separating and analyzing the particles and the dispersant by utilizing this. The separated particles may be precipitated by centrifugation and the supernatant analyzed. The separated dispersant may be extracted and analyzed.
- the present pretreatment method is a method in which the dispersion is heated and dried to dissociate the bond between the metal or metal oxide particles and the dispersing agent, and then the GPC measurement is performed. is there. By heating and drying the dispersion, the bonds between the particles and the dispersant can be dissociated and the particles can be aggregated.
- This is a method of separating and analyzing the particles and the dispersant by utilizing this. A solvent may be added to the separated particles and the dispersant, and the extract obtained by extracting the dispersant may be analyzed; You may analyze the solution obtained by removing the particle
- the ratio of the high molecular weight dispersant having a polyethylene glycol molecular weight measured by GPC of 1,000 or more and 40,000 or less is: With respect to 100 parts by mass of the low molecular weight dispersant having a polyethylene glycol molecular weight measured by GPC of 31 or more and less than 1,000, The amount is preferably 5 parts by mass or more and 500 parts by mass or less. If the ratio of the high molecular weight dispersant to 100 parts by mass of the low molecular weight dispersant is 500 parts by mass or less, it is preferable because crystallization of the coating film can be prevented and the smoothness can be improved.
- the amount is 100 parts by mass or less, since it is possible to obtain high dispersibility. If this value is 5 parts by weight or more, the coating film strength is improved and the removability at the time of reverse printing is improved, which is preferable. This value is more preferably 10 parts by mass or more, and still more preferably 20 parts by mass or more.
- the ratio of the high molecular weight dispersant to the low molecular weight dispersant in the dispersant is as follows.
- the molecular weight distribution curve in terms of polyethylene glycol measured by GPC is an area corresponding to a region having a molecular weight of 31 to less than 1,000, and a molecular weight of 1,000. It can be known from the ratio of the area corresponding to the region of 40,000 or less.
- the content of the dispersant in the first aspect of the dispersion of the present embodiment is preferably 1 part by mass or more, more preferably 5 parts by mass or more, and still more preferably 10 parts by mass with respect to 100 parts by mass of the particles. More than a part.
- the content of the dispersant is preferably 100 parts by mass or less, more preferably 50 parts by mass or less, and still more preferably 30 parts by mass or less with respect to 100 parts by mass of the particles. If the content of the dispersing agent relative to 100 parts by mass of the particles is 1 part by mass or more, the particles do not aggregate and sufficient dispersibility can be obtained. When the content of the dispersant with respect to 100 parts by mass of the particles exceeds 100 parts by mass, the resistance of the conductive film obtained by the residue of the dispersant increases.
- the proportion of the low molecular weight dispersant is 1 to 20 parts by mass
- the proportion of the high molecular weight dispersant is 0.1 to 10 parts by mass. It is preferable from the viewpoint of developing good reverse printability.
- the dispersant is liquid at 20 ° C., because a coating film with high smoothness can be obtained.
- the dispersion of the present embodiment contains a sulfur atom-containing material in the second aspect.
- the sulfur atom-containing material is an organic or inorganic material containing a sulfur atom in the molecular structure.
- the particles used together with the sulfur atom-containing material are preferably particles containing at least one selected from the group consisting of copper and copper oxide.
- Specific examples thereof include, for example, particles made of copper, cuprous oxide, cupric oxide, copper oxide having other oxidation numbers, and the like.
- examples thereof include particles having a core / shell structure in which the core part is copper and the shell part is copper oxide.
- cuprous oxide and cupric oxide are preferable because dispersibility tends to be excellent.
- Cuprous oxide is particularly preferred because it tends to be sintered at low temperature.
- These may contain metal salts or metal complexes or both as minor amounts of impurities.
- one of the above may be used alone, or a plurality of types may be mixed and used.
- the sulfur atom-containing material one or more selected from a compound having an —SH group, a simple sulfur compound, and a compound having a structure in which a plurality of sulfur atoms are continuously bonded is used. It can be preferably used from the viewpoint of resistance. Sulfur-hydrogen bonds and sulfur-sulfur bonds require a small amount of energy for dissociation and can easily generate active radicals or ions. Then, it is considered that the generated radicals or ions prevent the oxidation of the metal and promote the reduction of the metal oxide. That is, by adding these sulfur atom-containing materials to the dispersion of this embodiment, a conductive film can be obtained with smaller energy.
- the compound having an —SH group includes an organic substance having an —SH group and an inorganic substance having an —SH group.
- an organic substance having —SH group for example, a compound in which —SH group is introduced into the main skeleton of the polymer can be used.
- polyethylene glycol PEG
- PET polyethylene terephthalate
- PES polyethersulfone
- PEN polyethylene naphthalate
- PC polycarbonate
- PVA polyvinyl alcohol
- PMMA polymethyl methacrylate resin
- PMMA polybutene
- Ppentene
- a polyethylene glycol skeleton, a polyacetal skeleton, a polybutene skeleton, and a polysulfide skeleton are preferable because they are easily decomposed. These may be used alone or in combination.
- Specific examples of the organic substance having a —SH group and having a main skeleton of a polymer include, for example, poly (ethylene glycol) methyl ether thiol.
- Examples of the organic substance having —SH group include alkanethiol, fluoroalkanethiol, branched alkanethiol, thiol having an amide bond, thiol having an ester bond, thiol having a carbon-carbon double bond, dithiol, and —SH structure Organic salt, thiol having oxyethylene skeleton, thiol having heterocyclic skeleton, thiol having -OH group, thiol having organometallic complex skeleton, thiol having azide group, thiol having carboxy group, thiol having phosphonic acid group Thiol having an NHS group, thiol having a halogen, thiol having an aromatic ring, thiol having an alicyclic compound skeleton, thiol having a boron compound skeleton, and the like can be used.
- alkanethiol examples include ethanethiol, butanethiol, decanethiol, heptanethiol, hexadecanethiol, hexanethiol, nonanethiol, octadecanethiol, octanethiol, pentanethiol, pentadecanethiol, propanethiol, tetradecanethiol, and undecanethiol. be able to.
- fluoroalkanethiol examples include 11-mercaptoundecyl trifluoroacetate, 1H, 1H, 2H, 2H-perfluorodecanethiol, 3,3,4,4,5,5,6,6,6-nonafluoro-1 -Hexanethiol or the like can be used.
- branched alkanethiol examples include 2-ethylhexanethiol, 2-methyl-1-propanethiol, 2-methyl-2-propanethiol, 3-methyl-1-butanethiol, tert-dodecyl mercaptan, tert-nonyl mercaptan, and the like. Can be used.
- thiol having an amide bond for example, 3-mercapto-N-nonylpropionamide, 11-mercaptoundecanamide and the like can be used.
- 4-cyano-1-butanethiol can be used as the thiol having a cyano group.
- thiol having an ester bond for example, butyl 3-mercaptopropionate, methyl 3-mercaptopropionate and the like can be used.
- Examples of the thiol having a carbon-carbon double bond include cis-9-octadecene-1-thiol, dithiol (1,11-undecanedithiol, 1,16-hexadecanedithiol, 1,2-ethanedithiol, 1,3 -Propanedithiol, 1,4-butanedithiol, 1,5-pentanedithiol, 1,6-hexanedithiol, 1,8-octanedithiol, 1,9-nonanedithiol, 2,2 '-(ethylenedioxy) di Ethanethiol, 2,3-butanedithiol, 5,5′-bis (mercaptomethyl) -2,2′-bipyridine, hexa (ethylene glycol) dithiol, tetra (ethylene glycol) dithiol, benzene-1,4-dithiol, 1,4-benzenedimethanethiol and the
- organic salts having an —SH structure examples include (11-mercaptoundecyl) -N, N, N-trimethylammonium bromide, 11-amino-1-undecanethiol hydrochloride, 16-amino-1-hexadecanethiol hydrochloride 3-amino-1-propanethiol hydrochloride, 6-amino-1-hexanethiol hydrochloride, 8-amino-1-octanethiol hydrochloride and the like can be used.
- thiol having an oxyethylene skeleton for example, (11-mercaptoundecyl) tetra (ethylene glycol), triethylene glycol mono-11-mercaptoundecyl ether and the like can be used.
- thiol having a heterocyclic skeleton for example, 1 (11-mercaptoundecyl) imidazole, 11- (1H-pyrrol-1-yl) undecane-1-thiol and the like can be used.
- Examples of the thiol having an —OH group include 1-mercapto-2-propanol, 3-mercapto-1-propanol, 4-mercapto-1-butanol, 6-mercapto-1-hexanol, 8-mercapto-1-octanol, 9-mercapto-1-nonanol, 10-mercapto-1-decanol, 11-mercapto-1-undecanol, 11-mercaptoundecyl hydroquinone and the like can be used.
- thiol having an organometallic complex skeleton for example, 11- (ferrocenyl) undecanethiol, 6- (ferrocenyl) hexanethiol, and the like can be used.
- thiol having an azide group for example, 11-azido-1-undecanethiol and the like can be used.
- thiol having a carboxy group for example, 11-mercaptoundecanoic acid, 12-mercaptododecanoic acid, 3-mercaptopropionic acid, 6-mercaptohexanoic acid, 8-mercaptooctanoic acid and the like can be used.
- thiol having a phosphonic acid group for example, 11-mercaptoundecylphosphonic acid can be used.
- thiol having an NHS group for example, 12-mercaptododecanoic acid NHS ester or the like can be used.
- thiol having a halogen for example, 3-chloro-1-propanethiol can be used.
- Examples of the thiol having an aromatic ring include 1,1 ′, 4 ′, 1 ′′ -terphenyl-4-thiol, 1-naphthalenethiol, 2-phenylethanethiol, 4′-bromo-4-mercaptobiphenyl, 4 ′ -Mercaptobiphenylcarbonitrile, 4,4'-bis (mercaptomethyl) biphenyl, 4,4'-dimercaptostilbene, 4- (6-mercaptohexyloxy) benzyl alcohol, 4-mercaptobenzoic acid, 9-fluorenyl Methylthiol, biphenyl-4,4-dithiol, biphenyl-4-thiol, p-terphenyl-4,4 ′′ -dithiol, thiophenol and the like can be used.
- Examples of thiols having an alicyclic compound skeleton include 1-adamantanethiol, cyclohexanethiol, and cyclopentanethiol.
- Examples of thiols having a boron compound skeleton include m-carborane-1-thiol and m-carborane-9-thiol.
- thiol having an oxyethylene skeleton is particularly preferable because it is easily decomposed.
- These organic substances having an —SH group may be used alone or in combination.
- an inorganic substance having a —SH group for example, ammonium thiosulfate can be used.
- a compound having a structure in which a plurality of sulfur atoms are continuously bonded is represented by the following formula (1):
- the compound having the structure shown in FIG. for example, polysulfides such as disulfide, trisulfide, and tetrasulfide can be suitably used.
- disulfide, trisulfide, and tetrasulfide are preferable because they are stable at room temperature and can be stored for a long time.
- a compound having a structure in which a plurality of sulfur atoms are continuously bonded includes a halogen atom, a nitro group, an alkyl group (for example, a methyl group, an isopropyl group, a tertiary butyl group, etc.) in addition to a structure in which a plurality of sulfur atoms are continuously bonded.
- Cyano group aryl group (eg phenyl group, naphthyl group, thienyl group etc.), haloaryl group (eg pentafluorophenyl group, 3-fluorophenyl group, 3,4,5-trifluorophenyl group etc.), alkenyl group Alkynyl group, amide group, acyl group, alkylcarbonyl group, carboxy group, alkoxy group (eg methoxy group etc.), aryloxy group (eg phenoxy group, naphthyl group etc.), haloalkyl group (eg perfluoroalkyl group etc.), Thiocyano group, alkylsulfonyl group, sulfonamide group, amino group, alkyl Amino group (e.g.
- methylamino group a dialkylamino group (e.g., dimethylamino group, diethylamino group etc.), a hydroxyl group, which may have a polyethylene glycol group.
- the polyethylene glycol group means the following formula (2): ⁇ Wherein n is an integer of 1 to 1,300. ⁇ Is a functional group represented by: N in the formula (2) is preferably an integer of 1 to 500, and more preferably an integer of 1 to 250.
- a compound part having a structure in which a plurality of sulfur atoms are continuously bonded to a part of the polymer skeleton can also be used.
- the polymer skeleton in this case the same skeleton as the skeleton exemplified above can be used as the main skeleton of the polymer in the compound in which the —SH group is introduced into the main skeleton of the polymer.
- a polyethylene glycol skeleton, a polyacetal skeleton, a polybutene skeleton, and a polysulfide skeleton are preferable because they are easily decomposed. These may be used alone or in combination.
- Specific examples of the compound having a structure in which a plurality of sulfur atoms are continuously bonded include 2,2′-dithiodiethanol, dimethyltrisulfide, bis (pentamethylene) thiuram tetrasulfide, and the like.
- the number average molecular weight of the sulfur atom-containing material is not particularly limited, but is preferably 50,000 or less, more preferably 10,000 or less. A compound having a number average molecular weight exceeding 50,000 is difficult to decompose, and the resistance of the conductive film obtained by using the residue as a resistance component increases. A compound having a number average molecular weight of 10,000 or less tends to increase the sulfur concentration in the molecule, so that the resistance of the conductive film obtained by the sulfur reduction effect is further reduced.
- the number average molecular weight of the sulfur atom-containing material is preferably 32 or more.
- the molecular weight can be measured for various low molecular weight compounds by various mass spectrometry (MS). On the other hand, high molecular weight compounds can be measured by gel permeation chromatography (GPC). The standard for low molecular weight is less than 200, and the standard for high molecular weight is 100 or more.
- the GPC measurement conditions are, for example, as follows.
- Eluent: pH 3.5 phosphoric acid aqueous solution
- Injection volume 10 ⁇ l
- Standard sample Polyethylene oxide (Aldrich, PRODUCT No. 02393)
- the mass ratio of sulfur atoms contained in the sulfur atom-containing material is preferably 0.06% by mass or more, more preferably 0.5% by mass or more, and further preferably 3% by mass or more. When this value is 0.06% by mass or more, a significant reduction in resistance value is observed. The effect of reducing the maximum resistance value is obtained at 0.5% by mass or more. Even if the amount of the sulfur atom contained in the sulfur atom-containing material is 3% by mass or more, the amount added to the dispersion is small. The effect of reducing the resistance value of the obtained conductive film is manifested. 100 mass% or less may be sufficient as the mass ratio for the sulfur atom contained in a sulfur atom containing material.
- the compound having a mass ratio of 100 mass% of sulfur atoms contained in the sulfur atom-containing material is sulfur alone. This sulfur simple substance is also suitable as the sulfur atom-containing material in the present embodiment.
- the content of the sulfur atom-containing material in the dispersion of the present embodiment is preferably 10 ⁇ 4 parts by mass or more, more preferably 0.1 parts by mass or more, and still more preferably 1 with respect to 100 parts by mass of the particles. More than part by mass. This value is preferably 50 parts by mass or less, more preferably 30 parts by mass or less, and still more preferably 20 or less.
- the content of the sulfur atom-containing material is less than 10 ⁇ 4 parts by mass, no significant resistance reduction effect is observed in the obtained conductive film; If it is 0.1 parts by mass or more, the resistance reduction effect by plasma treatment or flash lamp annealing treatment can be maximized. If it is 1 mass part or more, the resistance reduction effect by heat processing can be maximized. On the other hand, when this value exceeds 50 parts by mass, a significant resistance reduction effect is not observed due to an increase in resistance due to the residue of the sulfur atom-containing material.
- the mass ratio of sulfur atoms in the high-boiling component and the non-volatile component contained in the dispersion according to the present embodiment is 0.003% by mass or more based on the total of the high-boiling component and the non-volatile component in the dispersion. Is more preferably 0.025% by mass or more, and still more preferably 0.15% by mass or more. This value is preferably 20% by mass or less, more preferably 10% by mass or less, and still more preferably 5% by mass or less.
- the high boiling point component means a component having a vapor pressure at 20 ° C. of 0.010 Pa or more and less than 20 Pa
- the non-volatile component means a component having a vapor pressure at 20 ° C.
- an inorganic substance having a —SH group, a sulfur simple substance, and a compound having a structure in which a plurality of sulfur atoms are continuously bonded have high activity and a low resistance effect. Is preferred because it is larger.
- the elemental sulfur-containing material in the dispersion includes, for example, nuclear magnetic resonance (NMR), ultraviolet-visible spectroscopy (UV-Vis), infrared spectroscopy (IR), Raman spectroscopy, mass spectrometry (MS), Identification and quantification can be performed by elemental analysis, gel permeation chromatography (GPC), X-ray analysis, thermogravimetry, differential thermal analysis, and the like.
- NMR nuclear magnetic resonance
- UV-Vis ultraviolet-visible spectroscopy
- IR infrared spectroscopy
- MS mass spectrometry
- Identification and quantification can be performed by elemental analysis, gel permeation chromatography (GPC), X-ray analysis, thermogravimetry, differential thermal analysis, and the like.
- GPC gel permeation chromatography
- X-ray analysis X-ray analysis
- thermogravimetry thermogravimetry
- differential thermal analysis and the like.
- the content of the sulfur atom-containing material in the dispersion can be quantified by, for example, GPC, thermogravimetry or the like.
- the —SH group can be identified by NMR.
- a structure in which elemental sulfur is continuously bonded can be identified by Raman spectroscopy.
- the dispersion Before the dispersion is subjected to analysis, the dispersion may be subjected to a pretreatment.
- pretreatment methods include extraction, distillation, concentration, dilution, pH adjustment, acid addition, base addition, filtration, flocculant addition, heating, cooling, vacuum drying, buffer addition, and ion exchange. , Centrifugation, column chromatography and the like can be used.
- Each of these sub-treatments may be performed alone, or a composite sub-treatment combining a plurality of these types may be performed. By such a pretreatment, desired components in the dispersion can be isolated or separated.
- the dispersion of this embodiment contains the above particles and a dispersant or a sulfur atom-containing material as essential components.
- the dispersion of this embodiment may further contain other components besides these. Examples of such other components include a surface energy adjusting agent, a reducing agent (excluding the aforementioned sulfur atom-containing material), an organic binder, a solvent, and the like.
- the dispersion in the second embodiment may further contain a compound having a phosphate group.
- the compound having a phosphoric acid group is preferably contained in the dispersion according to the second aspect of the present embodiment, in which the dispersion of the present embodiment contains the particles and the sulfur atom-containing material.
- phosphate groups are adsorbed on copper atoms preferably present in the particles, and aggregation of the particles is prevented by the steric hindrance effect.
- the weight average molecular weight Mw of the compound having a phosphate group is not particularly limited, but is preferably 300 to 30,000. When the weight average molecular weight Mw of the compound having a phosphoric acid group is lower than 300, the dispersion stability of the resulting dispersion tends to deteriorate. When this value is higher than 30,000, baking of the coating film becomes difficult.
- Specific examples of the compound having a phosphate group include, for example, “Disperbyk-142”, “Disperbyk-145”, “Disperbyk-110”, “Disperbyk-111”, “Disperbyk-180” manufactured by BYK Chemie. ”,“ Byk-9076 ”, etc .; Examples include “Plysurf M208F” and “Plysurf DBS” manufactured by Daiichi Kogyo Seiyaku. These may be used alone or in combination.
- the content thereof is preferably 1 part by mass or more, more preferably 5 parts by mass or more, and more preferably 100 parts by mass of particles. Preferably it is 10 mass parts or more. This value is preferably 100 parts by mass or less, more preferably 50 parts by mass or less, and still more preferably 30 parts by mass or less with respect to 100 parts by mass of the particles.
- the content of the compound having a phosphate group is 1 part by mass or more, the particles do not aggregate and sufficient dispersibility can be obtained.
- content of the compound which has a phosphoric acid group exceeds 100 mass parts, the resistance of the electroconductive film obtained by the residue of the compound which has a phosphoric acid group will increase.
- the dispersion of the present embodiment may contain a surface energy adjusting agent in order to improve coatability. Thereby, when the dispersion is applied to the blanket, the smoothness of the obtained coating film is improved, and thus a more uniform conductive film can be obtained.
- the surface energy adjusting agent as a trade name, for example, Triton X-45, Triton X-100, Triton X, Triton A-20, Triton X-15, Triton X-114, Triton X-405, Tween # 20, Tween # 40, Tween # 60, Tween # 80, Tween # 85, Pluronic F-68, Pluronic F-127, Span 20, Span 40, Span 60, Span 80, Span 83, Span 85, etc .;
- the addition amount of the surface energy adjusting agent in the dispersion of the present embodiment is not particularly limited, but is preferably 0.010% by mass or more, more preferably 0.10% by mass with respect to the total amount of the dispersion. is there.
- the addition amount of the surface energy adjusting agent is preferably 2.0% by mass or less, more preferably 1.5% by mass or less, based on the total amount of the dispersion.
- the surface energy adjusting agent is contained in an amount of 0.010% by mass or more, when the dispersion is applied, the thickness of the obtained coating film tends to be uniform, and coating unevenness tends not to occur.
- the conductive film obtained by baking the coating film there is no residue derived from the surface energy adjusting agent, and the addition amount of the surface energy adjusting agent is 2.0% by mass or less in order to improve the conductivity. It is preferable that
- the dispersion of this embodiment may contain a solvent for viscosity adjustment, coating property improvement, and the like.
- a solvent in the dispersion of this embodiment various solvents can be used depending on the use of the dispersion. For example, it is preferable to use a high-boiling solvent in applications that require high smoothness, and it is preferable to use a low-boiling solvent in applications that require quick drying.
- the vapor pressure at 20 ° C. of the low boiling point solvent is preferably 20 Pa or more and 150 hPa or less, more preferably 100 Pa or more and 100 hPa or less, and further preferably 300 Pa or more and 20 hPa or less.
- the vapor pressure is preferably 150 hPa or less.
- the vapor pressure is preferably 20 Pa or more in order to obtain a drying speed at which cracks do not occur in the dispersion coating film.
- the low boiling point solvent examples include water, ethyl acetate, normal propyl acetate, isopropyl acetate, pentane, hexane, cyclohexane, methylcyclohexane, toluene, methyl ethyl ketone, methyl isobutyl ketone, dimethyl carbonate, methanol, ethanol, n- Propanol, i-propanol, n-butanol, i-butanol, sec-butanol, t-butanol, n-pentanol, i-pentanol, 2-methylbutanol, sec-pentanol, t-pentanol, 3-methoxy Butanol, n-hexanol, 2-methylpentanol, sec-hexanol, 2-ethylbutanol, sec-heptanol, 3-heptanol, n
- the solvent is preferably a hydrophilic solvent.
- a mixed solvent composed of water and a monoalcohol having 10 or less carbon atoms is preferable. More preferred.
- monoalcohols having 10 or less carbon atoms at least one selected from the group consisting of ethanol, n-propanol, i-propanol, n-butanol, i-butanol, sec-butanol, and t-butanol is dispersible. , Volatility, and viscosity are particularly preferred as they are particularly suitable.
- These monoalcohols may be used alone or in combination. When the number of carbon atoms of the monoalcohol exceeds 10, the dispersibility of the particles is lowered. Therefore, the number of carbon atoms of the monoalcohol is preferably 10 or less.
- the vapor pressure at 20 ° C. of the high boiling point solvent is preferably 0.010 Pa or more and less than 20 Pa, more preferably 0.05 Pa or more and less than 16 Pa, and further preferably 0.1 Pa or more and less than 14 Pa.
- the vapor pressure is preferably less than 20 Pa.
- the vapor can be easily removed by a baking treatment described later, and the vapor can be prevented from being mixed with a solvent residue that could not be removed in the resulting conductive film.
- the pressure is preferably 0.010 Pa or more.
- high boiling point solvent examples include propylene glycol monomethyl ether acetate, 3-methoxy-3-methyl-butyl acetate, ethoxyethyl propionate, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether.
- the solvent is preferably a hydrophilic solvent, and more preferably a polyhydric alcohol having 10 or less carbon atoms. These polyhydric alcohols may be used alone or in combination. When the carbon number of the polyhydric alcohol exceeds 10, the dispersibility of the fine particles may be lowered. A mixture of the low boiling point solvent and the high boiling point solvent may be used.
- the amount of the solvent used can be selected according to the coating method.
- the total content of the high-boiling component and the nonvolatile component in the dispersion is preferably 1 to 40% by mass. It is more preferable to set the amount to be mass%.
- the film thickness of the coating film becomes sufficiently thick, and a highly conductive copper wiring can be formed by baking treatment.
- the viscosity of the dispersant can be adjusted to a range suitable for ink jet printing. Is prevented.
- the total content of the high-boiling component and the non-volatile component in the dispersion is preferably 40 to 90% by mass, preferably 60 to 85% by mass. It is more preferable to set the amount to be.
- the total content of the high-boiling component and the nonvolatile component in the dispersion is preferably 5 to 60% by mass, and 10 to 30% by mass. It is more preferable to set the amount to be.
- the dispersion can be prepared by mixing the above-described particles, a dispersant, and other components optionally blended at a predetermined ratio, respectively, and dispersing the mixture.
- the dispersion treatment is performed using an appropriate apparatus such as an ultrasonic method, a mixer method, a three-roll method, a two-roll method, an attritor, a Banbury mixer, a paint shaker, a kneader, a homogenizer, a ball mill, and a sand mill. Can do.
- the dispersion obtained by appropriately setting the concentration of the above-described particles and dispersant, and optionally mixed solvent, surface energy adjusting agent, and other components. The viscosity and surface energy can be adjusted.
- the viscosity at 25 ° C. of the dispersion of the present embodiment is not particularly limited, but the shear rate measured using a cone-plate type rotational viscometer is 1 ⁇ 10 ⁇ 1 s ⁇ 1 to 1 ⁇ 10 2 s ⁇ 1. Is preferably 100 mPa ⁇ s or less, more preferably 30 mPa ⁇ s or less.
- the viscosity at 25 ° C. is preferably 100 mPa ⁇ s or less from the viewpoint of easy formation of a uniform coating film during printing.
- the surface free energy in 25 degreeC of the dispersion of this embodiment Preferably it is 40 mN / m or less, More preferably, it is 35 mN / m or less, More preferably, it is 30 mN / m or less.
- the surface free energy at 25 ° C. is preferably 40 mN / m or less from the viewpoint of wettability of the dispersion to the blanket. The surface free energy can be measured using a contact angle meter.
- the dispersion according to the present embodiment can be applied (printed) on a substrate and subjected to a baking treatment to form a conductive wiring made of a conductive film having a desired pattern.
- the method for forming a conductive film in the present embodiment is as follows: A step of applying the dispersion of the present embodiment on a substrate to form a coating film; And heating and baking the coating film.
- the method for forming the conductive film in the present embodiment will be described in detail.
- Base material As a base material used in the method for forming a conductive film in the present embodiment, a resin base material, a glass base material, a silicon wafer, a paper base material and the like can be used in addition to a general printed circuit board. Typical printed boards are paper phenol boards, paper epoxy boards, glass composite boards, glass epoxy boards, Teflon boards, alumina boards, low temperature co-fired ceramics (LTCC) boards, and the like.
- the resin base material examples include polyimide, polyethylene terephthalate (PET), polyethersulfone (PES), polyethylene naphthalate (PEN), polyester, polycarbonate (PC), polyvinyl alcohol (PVA), polyvinyl butyral (PVB), Polyacetal, polyarylate (PAR), polyamide (PA), polyamideimide (PAI), polyetherimide (PEI), polyphenylene ether (PPE), polyphenylene sulfide (PPS), polyether ketone (PEK), polyphthalamide (PPA) ), Polyether nitrile (PEN), polybenzimidazole (PBI), polycarbodiimide, polysiloxane, polymethacrylamide, nitrile rubber, acrylic rubber, polyethylene Tiger fluoride, epoxy resins, phenolic resins, melamine resins, urea resins, polymethyl methacrylate resins (PMMA),
- Polybutene polypentene, ethylene-propylene copolymer, ethylene-butene-diene copolymer, polybutadiene, polyisoprene, ethylene-propylene-diene copolymer, butyl rubber, polymethylpentene (PMP), polystyrene (PS), styrene- Butadiene copolymer, polyethylene (PE), polyvinyl chloride (PVC), polyvinylidene fluoride (PVDF), polyetheretherketone (PEEK), phenol novolac, benzocyclobutene, polyvinylphenol, polychloropyrene, polyoxymethylene, polysulfone A substrate made of (PSF), cycloolefin polymer (COP), silicone resin or the like can be used.
- PMP polymethylpentene
- PS polystyrene
- PEEK polyetheretherketone
- the thickness of the substrate can be, for example, 1 ⁇ m to 10 mm, preferably 25 ⁇ m to 250 ⁇ m. If the thickness of the base material is 250 ⁇ m or less, it is preferable because the electronic device to be manufactured can be lightened, space-saving, and flexible.
- the substrate Prior to the formation of the coating film, the substrate may be washed.
- the substrate cleaning method for example, wet processing using a chemical solution; dry processing using corona discharge, plasma, UV, ozone, or the like can be used.
- the coating film formed as described above contains a solvent
- the solvent is preferably removed from the coating film.
- the solvent can be removed by a method in which the coated film is allowed to stand, for example, at 20 to 150 ° C., for example for 1 minute to 2 hours.
- a heating method in this case for example, techniques such as hot air drying, infrared drying, and vacuum drying can be used.
- the method for forming the coating film on the substrate as described above using the dispersion of the present embodiment is not particularly limited.
- screen printing, spray coating, spin coating, slit coating, die coating, bar coating, knife coating, offset printing, reversal printing, flexographic printing, ink jet printing, dispenser printing, gravure direct printing, gravure offset printing, etc. Can do.
- reverse printing is preferable from the viewpoint that higher-definition patterning can be performed.
- the dispersion according to the present embodiment can be particularly preferably used for forming a patterned coating film on a substrate by reversal printing.
- a coating film having a uniform thickness is formed on the surface of a blanket.
- the surface of the blanket is usually composed of silicone rubber.
- the surface of the blanket with the uniform dispersion coating film formed on the surface as described above is then pressed in contact with the relief printing plate, and the coating film formed on the blanket surface on the surface of the projection of the relief printing plate. A part is attached and transferred. Thereby, a desired printing pattern is formed on the coating film remaining on the surface of the blanket. Then, the blanket in this state is pressed against the surface of the substrate to be printed, and the patterned coating film remaining on the blanket is transferred to form a patterned coating film on the substrate to be printed. it can.
- the film thickness of the coating film can be selected according to the coating method.
- the thickness of the coating film when ink jet printing is applied is preferably 0.1 to 10 ⁇ m, more preferably 0.5 to 5 ⁇ m, after removal of the solvent.
- the coating film thickness after removal of the solvent is preferably 1 to 100 ⁇ m, more preferably 10 to 50 ⁇ m.
- the coating film thickness after removal of the solvent is preferably 0.01 to 5 ⁇ m, more preferably 0.1 to 1 ⁇ m.
- the surface roughness (Ra) of the coating film is preferably 12 nm or less, more preferably 7 nm or less, and still more preferably 4 nm or less.
- Ra 12 nm or less
- the coating film is in close contact with the removal plate during reverse printing, and sufficient removability tends to be obtained. If Ra is 7 nm or less, a flat film surface tends to be maintained even in the obtained conductive film. If Ra is 4 nm or less, uneven firing is very small and uniform electrical characteristics tend to be obtained.
- the solvent is preferably removed from the coating film.
- the solvent can be removed by a method in which the coated film is allowed to stand, for example, at 20 to 150 ° C., for example for 1 minute to 2 hours.
- a heating method in this case for example, techniques such as hot air drying, infrared drying, and vacuum drying can be used.
- the coating film formed by applying the dispersion of this embodiment is When the dispersion according to the first aspect is used, it includes particles selected from metal particles or metal oxide particles, and a dispersant.
- the dispersant is a low molecular weight dispersant having at least one peak in a region having a molecular weight of 31 or more and less than 1,000, and a molecular weight of 1,000 or more and 40 or more in a molecular weight distribution curve in terms of polyethylene glycol measured by gel permeation chromatography.
- a high molecular weight dispersant having at least one peak in the region of 1,000 or less When using the dispersion according to the second aspect, particles containing one or more selected from the group consisting of copper and copper oxide; One or more sulfur atom-containing materials selected from the group consisting of a compound having a —SH group, a simple sulfur atom, and a compound having a structure in which a plurality of sulfur atoms are continuously bonded; including.
- These films contain components other than the solvent among the components contained in the dispersion used for coating, preferably while maintaining the chemical structure and composition ratio. Therefore, as for the constituent components of the film, the above-mentioned constituent components of the dispersion are preferably valid as they are.
- the coating film of this embodiment is preferably bendable.
- the bendable radius of curvature is preferably 1,000 mm or less, more preferably 500 mm or less, and even more preferably 100 mm or less. If it is 1,000 mm or less, it can be worn on a human torso, if it is 500 mm or less, it can be worn on a human leg, and if it is 100 mm or less, it can be worn on a human upper limb. In addition, it becomes possible to apply a roll-to-roll manufacturing method.
- the lower limit value of the radius of curvature can be set to 0.1 mm or more, for example.
- a conductive film can be formed on the substrate by heating and then baking the coating film formed as described above.
- the heating and baking method in the method for producing a conductive film of the present embodiment is not particularly limited as long as the particles contained in the coating film can be fused to form a sintered film of metal fine particles. .
- Firing in the method for producing a conductive film of the present invention may be performed by, for example, a method using a heat medium such as a firing furnace, plasma, ultraviolet light, vacuum ultraviolet light, electron beam, infrared lamp annealing, flash lamp annealing, laser, or the like. May be used. Among these, it is preferable to perform by plasma treatment, flash lamp annealing treatment, or contact treatment with a heat medium.
- a heat medium such as a firing furnace, plasma, ultraviolet light, vacuum ultraviolet light, electron beam, infrared lamp annealing, flash lamp annealing, laser, or the like. May be used. Among these, it is preferable to perform by plasma treatment, flash lamp annealing treatment, or contact treatment with a heat medium.
- the flash lamp annealing treatment and the plasma treatment are characterized in that inorganic substances are heated strongly but organic substances are not heated so much. Therefore, the heating by these methods heats only the particles and does not damage the substrate. Therefore, an inexpensive but poorly heat-resistant resin such as PET can be used for the substrate, which is preferable.
- plasma treatment is more preferable because only the inorganic surface tends to be heated and damage to the substrate due to heat transfer is small.
- the coating film is preferably baked in a non-oxidizing atmosphere in order not to oxidize the conductive film obtained after the heating and baking.
- the coating film is baked under a reducing atmosphere in order to promote the reduction of the metal oxide and reduce the resistance of the obtained conductive film as much as possible.
- the non-oxidizing atmosphere is an atmosphere that does not contain an oxidizing gas such as oxygen.
- the inert atmosphere is an atmosphere filled with an inert gas such as argon, helium, neon, or nitrogen.
- the reducing atmosphere refers to an atmosphere in which a reducing gas such as hydrogen or carbon monoxide exists.
- the dispersion coating film may be fired as a closed system by filling the above gas into a firing furnace.
- the dispersion coating film may be baked while flowing these gases in a calcination furnace.
- the firing furnace is once evacuated to remove oxygen in the firing furnace and then replaced with a non-oxidizing gas.
- the contact treatment with the heat medium may be performed in a pressurized atmosphere or in a reduced pressure atmosphere.
- the plasma treatment in the present embodiment is a treatment for exposing the sample to plasma by generating plasma in a space where the sample is placed.
- a method for generating plasma is not particularly specified.
- a method using a DC arc discharge, a high-frequency electromagnetic field, a microwave, or the like can be used.
- a method using a microwave is preferable because plasma can be generated at a low temperature, and thermal damage to the substrate is small.
- the microwave specifically refers to an electromagnetic wave having a frequency of 300 MHz to 3 THz.
- the center frequency of the microwave is preferably 2 GHz or more and 4 GHz or less, and more preferably 2.4 GHz or more and 2.5 GHz or less.
- An apparatus for generating microwave plasma includes, for example, a microwave oscillator, a transmission circuit, an antenna, and a discharge vessel. In addition to these, a magnetic field generator may be further used as necessary. In this apparatus, plasma is generated in the discharge vessel.
- a microwave oscillator for example, a klystron, a magnetron, a gyrotron, or the like can be used.
- the transmission circuit for example, a rectangular waveguide, a circular waveguide, a coaxial line, or the like can be used.
- a power monitor and a dummy load that absorbs reflected power may be attached in the middle of the transmission circuit.
- the structure of the apparatus for example, it has a transmission line in the upper part and a discharge container in the lower part, the transmission line and the discharge container are connected via a quartz window, and the sample stage is in the lower part of the discharge container. It is preferable that it is installed. Although there is no specific designation for the microwave output, it is preferable that the output is 100 W or more and 3 kW or less.
- the output of the microwave may be constant during the process or may be changed during the process.
- the temperature of the sample stage is not particularly specified, but is preferably 30 ° C. or higher and 150 ° C. or lower. If this temperature is 150 ° C. or lower, a general-purpose resin substrate having low heat resistance such as PET can be used as the base material. If it is 30 ° C. or higher, a dense conductive film can be obtained.
- the ambient atmosphere during the plasma treatment is not particularly specified, but a reducing atmosphere is preferable. The ambient atmosphere can be controlled, for example, by flowing an appropriate gas through the discharge vessel.
- the gas flow rate is not particularly specified, but is preferably 10 SCCM or more and 1,000 SCCM or less, more preferably 50 SCCM or more and 5,600 SCCM or less, and further preferably 100 SCCM or more and 400 SCCM or less.
- a reducing atmosphere by flowing a mixed gas obtained by mixing a small amount of hydrogen with an inert gas.
- an inert gas in the mixed gas for example, nitrogen; a rare gas such as helium or argon can be used.
- the hydrogen content in the mixed gas is preferably 0.1% by mass or more and 10% by mass or less, and more preferably 2% by mass or more and 6% by mass or less.
- the pressure in the discharge vessel may be atmospheric pressure or reduced pressure.
- the plasma treatment time is not particularly specified, but is preferably 10 seconds or longer and 30 minutes or shorter, more preferably 30 seconds or longer and 10 minutes or shorter, and further preferably 1 minute or longer and 5 minutes or shorter.
- the flash lamp annealing process in the present embodiment is a process for heating a sample by irradiating the sample with light having a high energy density.
- a light source used for the flash lamp annealing treatment for example, a xenon lamp, a krypton lamp, or the like can be used.
- the wavelength of the light source is preferably in the visible light region because the coating film can be baked without causing thermal damage to the transparent resin substrate.
- the wavelength of the light source can be easily controlled through a color filter.
- the energy per pulse is not particularly specified, but is preferably 50 J or more and 3,000 J or less, more preferably 100 J or more and 2,000 J or less, and further preferably 150 J or more and 1,500 J or less. .
- the pulse time is not particularly specified, but is preferably 10 ⁇ sec or more and 100 msec or less, more preferably 50 ⁇ sec or more and 10 msec or less, and further preferably 100 ⁇ sec or more and 5 msec or less.
- the pulse time refers to the time from the time when power is supplied to the lamp for pulsed light irradiation to the time when power supply to the lamp is stopped for turning off the pulsed light.
- the sample may be irradiated with pulsed light multiple times.
- the pulse interval is not particularly specified, but is preferably 10 ⁇ s or more and 1 second or less.
- the pulse interval refers to the time from the time when power is applied to the lamp for pulsed light irradiation to the time when power is applied to the lamp for the next pulsed light irradiation.
- the temperature of the sample stage is not particularly specified, but is preferably 30 ° C. or higher and 150 ° C. or lower. If this temperature is 150 ° C. or lower, a general-purpose resin substrate having low heat resistance such as PET can be used as the base material. If it is 30 ° C. or higher, a dense conductive film can be obtained.
- a gas may be flowed into the container.
- the ambient atmosphere during the flash lamp annealing treatment is not particularly specified, but a reducing atmosphere is preferable.
- the specific example of the reducing atmosphere and the gas flow rate are the same as those described above for the reducing atmosphere during plasma processing.
- a pressure treatment may be further performed.
- the formed conductive film can be made denser, which is preferable.
- a pressing method for example, a roller press, a flat plate press, or the like can be used. In particular, a roller press is preferable because it is suitable for a large area press.
- the dispersion of this embodiment can be directly drawn in a desired pattern on a substrate to form a patterned coating film and a conductive film. Therefore, productivity can be remarkably improved as compared with a conventional method using a photoresist. Furthermore, a conductive film laminate having a diameter of 7 inches or more, which is difficult to produce by conventional photolithography, can be easily manufactured by the method of this embodiment.
- the conductive film obtained by the method of the present embodiment can have a surface roughness (Ra) of 20 nm or less, 10 nm or less, or 5 nm or less. If Ra is 20 nm or less, there are few places where the film thickness is locally thin, and defects due to disconnection can be reduced. If Ra is 10 nm or less, defects tend not to occur when another film or element is further laminated on the conductive film. If Ra is 5 nm or less, the crystallinity of another material further laminated on the conductive film can be improved, and thus, for example, it can be suitably used for forming an electrode of a thin film transistor.
- the resistivity of the conductive film of the present embodiment is preferably 200 ⁇ cm or less, more preferably 100 ⁇ cm or less, and further preferably 30 ⁇ cm or less.
- the conductive film of the present embodiment is preferably bendable.
- the bendable radius of curvature is It is preferably 1,000 mm or less, more preferably 500 mm or less, and still more preferably 100 mm or less. If it is 1,000 mm or less, it can be attached to a human torso, if it is 500 mm or less, it can be attached to a human leg, and if it is 100 mm or less, it can be attached to a human upper limb.
- the roll-to-roll manufacturing method can be applied.
- the conductive film of this embodiment contains at least a metal, a metal oxide, and an organic substance.
- the conductive film is divided into two in the thickness direction, one of the halves on one side has a high metal concentration, and the other has a high concentration of metal oxide and organic matter.
- the electroconductive film of this embodiment shows high electroconductivity.
- the conductive film is a two-layer film composed of a surface layer mainly composed of a metal layer and a lower layer having fine pores.
- the surface layer may be a dense metal layer or a metal layer containing fine pores.
- a dense metal layer is preferable because it exhibits high conductivity.
- a metal layer containing fine pores is preferable because it is lightweight and flexible and is not easily broken. Since the metal layer including the fine pores can increase the surface area, there is an advantage that the adhesion with various laminated materials can be increased. Therefore, for example, the soldering strength can be increased, or it can be suitably used as a chemical sensor utilizing adsorption / desorption on the surface, oxidation / reduction on the surface, and the like.
- the lower layer of the conductive film is presumed to have a structure similar to that of the coating film before heating and baking.
- the thickness ratio between the surface layer and the lower layer can be controlled by the conditions when the coating film is heated and fired. That is, the higher the heating temperature, the longer the heating time, and the higher the irradiation energy intensity of the plasma or flash lamp, the greater the thickness ratio of the surface layer.
- the relative element concentration of the metal contained in the surface layer is preferably 70% or more, more preferably 80% or more, further preferably 85% or more, and may be 100%. If the metal element contained in the surface layer is 50% or more, good conductivity can be exhibited, and if it is 80% or more, high conductivity can be obtained.
- the relative element concentration of oxygen derived from the metal oxide contained in the surface layer is preferably 20% or less, more preferably 15% or less, further preferably 10% or less, and 0%. Also good.
- the relative element concentration of the metal contained in the lower layer is preferably 20% or more, preferably 50% or more, more preferably 75% or more; preferably 95% or less, 90% Or less, more preferably 85% or less. If this value is 20% or more, high adhesion to the surface layer is obtained, and if it is 90% or less, high adhesion to the substrate is obtained.
- the relative elemental concentration of oxygen derived from the metal oxide contained in the lower layer is preferably 1% or more, more preferably 5% or more, further preferably 10% or more; 50% or less. It is preferably 30% or less, more preferably 20% or less. If this value is 1% or more, the adhesion between the substrate and the substrate is improved. If this value is 50% or less, the adhesion between the highly conductive surface layer is improved.
- the relative element concentration of fluorine contained in the conductive film is preferably 0.1% or more, more preferably 0.5% or more, further preferably 1% or more; preferably 5% or less, preferably 3% or less. More preferably, it is more preferably 2% or less.
- the relative element concentration of fluorine is a value for the entire conductive film.
- the relative element concentration in the conductive film can be measured by various elemental analysis methods. Elemental analysis methods include, for example, inductively coupled plasma emission spectroscopy (ICP-AES), inductively coupled plasma mass spectrometry (ICP-MS), secondary ion mass spectrometry (SIMS), and time-of-flight secondary ion mass spectrometry. Method (TOF-SIMS), energy dispersive X-ray analysis (EDX), glow discharge mass spectrometry (GDMS), Rutherford backscattering spectroscopy (RBS), X-ray photoelectron spectroscopy (XPS), etc. . In particular, XPS is preferable because information on the bonding state of atoms can be obtained.
- ICP-AES inductively coupled plasma emission spectroscopy
- ICP-MS inductively coupled plasma mass spectrometry
- SIMS secondary ion mass spectrometry
- TOF-SIMS time-of-flight secondary ion mass spectrometry
- the relative element concentration refers to a value expressed in atomic% of the existence ratio of a certain element with respect to all elements except hydrogen and helium contained in the film.
- XPS measurement conditions include the following. Equipment used: ULPHI PHI, PHI5000 VersaProbe II Excitation source: Monochromated Al K ⁇ 15 kV ⁇ 3.3 mA Photoelectron extraction angle: 45 degrees Pass Energy: 117.4 eV (Survey scan), 23.5 eV (Narrow scan)
- the relative sensitivity coefficient used for converting the measured value into the relative element concentration a value attached to the apparatus can be used. An example of the relative sensitivity coefficient is shown below. C 1s: 0.314 O 1s: 0.733 F 1s: 1.000 Cu 2p3 / 2: 2.626
- the relative element concentration inside the measurement object can be measured.
- the etching method include wet etching using a chemical solution that can dissolve or corrode the measurement target; dry etching using a reactive gas, ions, radicals, lasers, or the like. Ions, radicals, and the like used for dry etching can be generated by, for example, laser, microwave, glow discharge, arc discharge, corona discharge, or the like. The generated ions or the like may be subjected to etching after being accelerated by an acceleration voltage. The accelerated high energy ions can be sputtered by colliding with the sample surface.
- Examples of the dry etching apparatus include a UV-ozone cleaning apparatus, a plasma cleaning apparatus, a corona discharge apparatus, a sputtering apparatus, a reactive ion etching apparatus, an ion beam apparatus, a focused ion beam apparatus, a gas cluster ion beam apparatus, and a nanosecond pulse laser. Examples thereof include a device and a femtosecond pulse laser device. Examples of the etching conditions include the following.
- Examples of a technique for continuously performing etching and elemental analysis in a vacuum include a technique in which SIMS, sputtering, and the like are used in combination with XPS, AES, TOF-SIMS, and the like. Of these, the combined use of sputtering and XPS is particularly preferable.
- the relative element concentration profile in the thickness direction can be suitably obtained by using, for example, an ULVAC-PHI Co., Ltd. product, PH15000 VersaProbeII, and using the above XPS measurement conditions and etching conditions.
- About 5 nm from the outermost surface of the conductive film is easily oxidized after firing and has a property of easily adsorbing organic substances in the atmosphere. Therefore, it is preferable to use data of a layer deeper than the outermost surface by 5 nm or more as data representing the surface layer.
- the conductive film of the present embodiment exhibits high adhesion because the bond between the base material and the lower layer and between the lower layer and the upper layer is strong.
- a highly smooth conductive film having a miniaturized pattern can be obtained.
- a conductive film can be suitably used for, for example, a printed board, a flexible printed board, an electromagnetic wave shielding sheet, a semiconductor device (thin film transistor, diode, ferroelectric memory, etc.), a metal mesh transparent conductive film, and the like.
- the metal mesh transparent conductive film refers to a metal substrate having a width of 50 ⁇ m or less formed on a transparent substrate in a mesh shape.
- This metal mesh transparent conductive film has a feature that its surface is electrically low resistance while being apparently transparent. Since a structure having a width of 50 ⁇ m or less is difficult to visually recognize, it seems as if the metal wiring of the metal mesh transparent conductive film does not exist on the substrate. Further, the region where the metal wiring does not exist (opening) transmits light. Therefore, the metal mesh transparent conductive film is visually recognized as a transparent body.
- the dispersion according to this embodiment can be suitably used as a material for forming wiring in the metal mesh transparent conductive film.
- the ratio of the area of the opening of the metal mesh transparent conductive film to the area of the entire surface of the conductive film is 50% or more. Is preferably 80% or more, and more preferably 90% or more. If this ratio is 50% or more, the metal mesh transparent conductive film is recognized as a transparent body; if it is 80% or more, when the metal mesh transparent conductive film is used for a display, the amount of reflection of ambient light is reduced. Less, it becomes possible to fully recognize the screen even outdoors; if it is 90% or more, glare can be reduced when the metal mesh transparent conductive film is used for a display.
- the width of the wiring is preferably 50 ⁇ m or less, more preferably 10 ⁇ m or less, and even more preferably 2 ⁇ m or less. If this width is 50 ⁇ m or less, the metal mesh transparent conductive film is recognized as a transparent body; if it is 10 ⁇ m or less, sufficient light transmittance and mesh density to be used for the transparent conductive film for touch panel can be obtained. Yes; if it is 2 ⁇ m or less, a highly uniform electric field can be formed on the mesh.
- the dispersion of the present embodiment is suitably used for forming a wiring of a metal mesh transparent conductive film in, for example, a common electrode of a liquid crystal display, an organic EL display, and electronic paper; a light extraction electrode of organic EL lighting; it can.
- a thin film transistor is an electronic device in which a gate electrode, a gate insulating film, a semiconductor, a source electrode, and a drain electrode are stacked.
- the dispersion of this embodiment can be suitably used as a material for forming a gate electrode, a source electrode, or a drain electrode.
- the distance between the source electrode and the drain electrode is preferably 50 ⁇ m or less, more preferably 10 ⁇ m or less, and even more preferably 2 ⁇ m or less. The smaller the channel length, the higher the operating frequency of the thin film transistor.
- an L / S 5 ⁇ m / 5 ⁇ m pattern was formed on a PET film (A4300, manufactured by Toyobo Co., Ltd.) by reversal printing according to the following procedure.
- the dispersion was uniformly applied to a PDMS smooth surface as a release surface of the blanket by a bar coater so as to have a dry film thickness of about 400 nm, and naturally dried for about 1 minute to obtain a coating film. Thereafter, the removal plate was pressed against the dispersion coating film on the blanket and then released to remove the unnecessary portion of the coating film. Subsequently, the pattern formed on the blanket was transferred onto the PET film by pressing the PET film onto the blanket.
- volume resistivity of conductive film The volume resistivity of the conductive film obtained in (6) above was measured using a low resistivity meter Lorester GP manufactured by Mitsubishi Chemical. The measurement results are shown in Table 2.
- Example 1-13 Silver nanopowder with a particle size of 150 nm or less (product name “Silver nanopowder, ⁇ 150 nm Particle Size, 99% trace metal base”, manufactured by Aldrich) 0.20 g, poly (ethylene glycol) methyl having a number average molecular weight of 6,000 as a dispersant A mixture of 0.010 g of ether thiol (manufactured by Aldrich) and 0.030 g of poly (ethylene glycol) methyl ether thiol (manufactured by Aldrich) having a number average molecular weight of 800 was added as a solvent with 0.76 g of distilled water, respectively, and a homogenizer was added. To obtain a dispersion of Example 1-13 containing silver particles. The average secondary particle size of the fine particles contained in the dispersion of Example 1-13 was 521 nm.
- Examples 1-14 to 1-16 In the same manner as in Example 1-13, except that the types and amounts of each component in the mixture of dispersants were changed as shown in Table 1, Examples 1-14 to A dispersion of 1-16 was obtained. The dispersions obtained in Examples 1-13 to 1-16 were subjected to GPC measurement. The molecular weight distribution curve in terms of polyethylene glycol was found to have a molecular weight range of 31 to less than 1,000 and a molecular weight of 1,000. Peaks were respectively detected in the region of 40,000 or less. Table 1 shows the average secondary particle size of the particles contained in these dispersions and the results of various evaluations performed by the above-described methods.
- PEG-MET 350 O- (2-mercaptoethyl) -O′-methyl-hexa (ethylene glycol) with a molecular weight of 356.48
- PEG-MET 800 poly (ethylene glycol) methyl ether thiol (manufactured by Aldrich) having a number average molecular weight of 800
- PEG-MET 2000 Poly (ethylene glycol) methyl ether thiol (manufactured by Aldrich) having a number average molecular weight of 2,000
- PEG-MET 6,000 poly (ethylene glycol) methyl ether thiol (manufactured by Aldrich) having a number average molecular weight of 6,000 ME-100SH: SUNBRIGHT ME-100SH (trade name, manufactured by NOF Corporation), poly (ethylene glycol) methyl ether thiol with a number average molecular weight of 10,000 ME-400SH: SUNBRIGHT ME-400SH (trade name, manufactured by NOF Corporation), poly (ethylene glycol) methyl
- FIG. 5A shows a micrograph of the printed pattern obtained in Comparative Example 1-1
- FIG. 5B shows a micrograph of the printed pattern obtained in Example 1-1.
- a “bottom” phenomenon of the pattern is observed in a region where two lines intersect at a right angle, and the removability of the coating film by the removal plate in reverse printing is not good. It turns out that it is enough.
- a region where two lines intersect at a right angle is also neatly formed.
- FIGS. 4 (a) to 4 (c) micrographs of the coating films obtained in Comparative Examples 1-2 to 1-4 are shown in FIGS. 4 (a) to 4 (c), respectively. From these photographs, it can be seen that the coating film is crystallized and the surface is uneven. On the other hand, micrographs of the coating films obtained in Examples 1, 2, 4, and 5 are shown in FIGS. 3 (a) to 3 (d), respectively. In any case, it can be seen that a flat coating film is obtained. From these facts, it was verified that the dispersion of the present invention is suitable for fine printing by the reverse printing method.
- Example 1-3 The coating film obtained in Example 1-3 was immersed in water heated to 90 ° C. to extract the dispersant. The obtained extract was concentrated to prepare a sample for GPC.
- FIG. 6 Sectional SEM images of the conductive films obtained in Example 1-1 and Comparative Example 1-1 are shown in FIGS.
- FIG. 6 reveals that the conductive film obtained in this example is a two-layer film composed of a relatively dense upper layer and a lower layer having minute voids.
- XPS analysis revealed that the upper layer was a metal layer mainly composed of copper, and the lower layer was a hybrid layer mainly composed of copper (I) oxide and organic matter.
- I copper
- FIG. 7 the film obtained in this comparative example has poor surface smoothness, a dense metal layer is not formed, and the substrate is damaged.
- the conductive film obtained in Example 1-1 was subjected to XPS measurement while sputtering the surface with argon plasma to obtain a profile in the thickness direction of the relative element concentration.
- the profile is shown in FIG. Referring to FIG. 9, it can be seen that the surface layer of the conductive film has a low oxygen element concentration derived from copper oxide and is mainly composed of copper in a metal state. It can be seen that the lower layer of the conductive film has a high oxygen concentration derived from copper oxide and contains a large amount of copper oxide. In FIG. 9, the copper element concentration on the outermost surface of the conductive film is low. This phenomenon is considered to be due to the fact that the outermost surface of the film was oxidized during storage after the conductive film was formed by baking and was contaminated with organic substances present in the air.
- Examples 2-1 to 2-5 and 2-10, and Comparative Examples 2-2 to 2-9 To each 1.0 g of the dispersion of Comparative Example 1, a sulfur atom-containing material of the type and amount described in Table 1 is added and stirred using a homogenizer, thereby containing copper (I) oxide particles. Dispersions of Examples 2-1 to 2-5 and 2-10 and Comparative Examples 1-2 to 2-9 were obtained.
- the sulfur used in Example 2-1 is ⁇ sulfur
- the copper (II) sulfide used in Comparative Example 1-8 is copper (II) sulfide pentahydrate.
- Example 2-6 In a mixed solvent consisting of 800 g of water and 400 g of 1,2-propylene glycol (manufactured by Wako Pure Chemical Industries), 80 g of copper (II) acetate monohydrate (manufactured by Wako Pure Chemical Industries) is dissolved, and hydrazine (manufactured by Wako Pure Chemical Industries, Ltd.) is dissolved. After adding 24 g and stirring, it was separated into a supernatant and a precipitate by centrifugation.
- 1,2-propylene glycol manufactured by Wako Pure Chemical Industries
- 80 g of copper (II) acetate monohydrate manufactured by Wako Pure Chemical Industries
- hydrazine manufactured by Wako Pure Chemical Industries, Ltd.
- Example 2-6 the copper (I) oxide particles were prepared in the same manner as in Example 2-6, except that each of the types and amounts of compounds listed in Table 2 was used as the sulfur atom-containing material. Dispersions of Examples 2-7 to 2-9 containing the respective components were obtained.
- Examples 3-1 to 3-6 Each of the types and amounts of sulfur atom-containing materials listed in Table 4 was added to 1.0 g of the dispersion obtained in Comparative Example 2-1, and the mixture was stirred using a homogenizer. 3-6 dispersions were obtained respectively.
- the dispersion according to the present invention can obtain fine wiring by coating and baking treatment. Therefore, the dispersion is suitably used for producing printed wiring boards, electronic devices and the like.
Abstract
Description
これに対し、金属及び金属酸化物より成る群から選択される微粒子を分散させた塗料を用いて、基板上に所望の配線パターンを直接印刷する工程を経る方法が注目されている。回路基板の製造をこのような方法によると、工程数が少なくなり、フォトレジスト材料を用いる必要がない等、極めて高い生産性が見込まれる。
第1に、印刷法によると、一般には、微細な配線を形成することが困難である。
第2に、印刷法によると、印刷パターンに導電性を付与するために高温の焼成工程を要するため、耐熱性の低い基材上に導電性の薄膜を形成することは困難である。
以下、詳説する。
印刷法による微細パターン形成のために、金属又は金属酸化物のナノ粒子を含有する分散体をインクとして用いる技術が注目されている。
印刷に用いるインクとして粒径が大きい粒子を含有する分散体を用いると、塗布膜のエッジ及び表面が凸凹になってしまい、微細パターニングができない。塗布膜の表面粗さが大きいと、該塗布膜に積層して印刷される材料の特性に悪影響を与える可能性があるため、塗布膜の平滑性は重要である。この点、ナノ粒子であれば塗布膜のエッジ及び表面が平滑になり、微細パターニングが可能となる。
例えば非特許文献1には、サブフェムトリットルインクジェットプリンタ及び銀ナノインク(ハリマ化成製、NPS-J-HP)を用いて、L/S=1μm/1μmの微細銀電極の形成に成功している。しかしながらサブフェムトリットルインクジェット印刷は、印刷速度が非常に遅く、従って、量産のための技術としては不適切である。ここで、L/Sとはライン/スペースのことを指す。ラインは印刷物の線幅のことを指し、スペースは印刷物の線と線の間のインクの存在しない領域の幅のことを指す。L/S=1μm/1μmとは、線幅が1μmであり、線と線の間の幅が1μmであることを指す。
導電性パターン形成のために印刷法を採用する場合、塗料に分散させる微粒子としては、銀、金、及び銅、並びにこれらの酸化物から選択して用いられることが多い。これらのうち、特に銅及び銅酸化物より成る群から選択される1種以上を含む微粒子は、安価であるため特に好適である。
特許文献4には、保護剤に被覆された銅酸化物ナノ粒子分散体が提案されている。例えば、保護剤としてドデシルアミンを用いた銅酸化物ナノ粒子分散体をガラス板上に塗布し、250℃において60分の熱処理を施すことによって、平均膜厚1μm、体積抵抗率6×10-6Ωcmの銅薄膜を形成している(特許文献4、実施例1参照)。
本発明が解決しようとする第2の課題は、PETフィルムのような耐熱性の低い基材に高温によるダメージを与えることなく、低抵抗な銅薄膜を形成できる分散体を提供することである。
微粒子と分散剤とを含有する分散体において、前記分散剤として、特定の分子量分布を有するものを使用することにより、前記の課題が達成されることを見出し、これに基づいて本発明を完成したものである。
本発明は、以下の事項を開示するものである。
前記分散剤が、前記粒子に結合又は吸着可能な化学構造を有し、そして、
前記分散剤が、ゲルパーミエーションクロマトグラフィーで測定したポリエチレングリコール換算の分子量分布曲線において、分子量31以上1,000未満の領域に少なくとも1つのピークを有する低分子量分散剤と、分子量1,000以上40,000以下の領域に少なくとも1つのピークを有する高分子量分散剤と、を含むことを特徴とする、前記分散体。
[4] 前記分散剤中、低分子量分散剤100質量部に対する高分子量分散剤の割合が5質量部以上500重量部以下である、[1]~[3]のいずれか一項に記載の分散剤。
低分子量分散剤の割合が1質量部~20質量部であり、
高分子量分散剤の割合が0.1質量部~10質量部である、[1]~[4]のいずれか一項に記載の分散剤。
[6] 前記粒子が、銅及び銅酸化物から成る群より選択される1種以上を含有する、[1]~[5]のいずれか一項に記載の分散剤。
[8] 前記分散剤が、ポリエチレングリコール及びポリプロピレングリコールから成る群より選択される1種以上の骨格を有する、[1]~[7]のいずれか一項に記載の分散体。
前記塗布膜を加熱焼成する工程と、
を含むことを特徴とする、導電性膜の製造方法。
[10] 前記加熱工程が、プラズマ処理、フラッシュランプアニール処理、又は熱媒体との接触処理によって行われる、[9]に記載の導電性膜の製造方法。
-SH基を有する化合物、硫黄単体、及び硫黄原子が複数連続して結合した構造を有する化合物から成る群より選択される1種以上の硫黄原子含有物と、
を含むことを特徴とする、分散体。
[12] 金属粒子及び金属酸化物粒子から選択される粒子と、分散剤と、を含む膜であって、
前記分散剤が、前記粒子に結合又は吸着可能な化学構造を有し、そして
前記分散剤が、ゲルパーミエーションクロマトグラフィーで測定したポリエチレングリコール換算の分子量分布曲線において、分子量31以上1,000未満の領域に少なくとも1つのピークを有する低分子量分散剤と、分子量1,000以上40,000以下の領域に少なくとも1つのピーク有する高分子量分散剤と、を含むことを特徴とする、前記膜。
-SH基を有する化合物、硫黄単体、及び硫黄原子が複数連続して結合した構造を有する化合物から成る群より選択される1種以上の硫黄原子含有物と、
を含むことを特徴とする、膜。
[14] 少なくとも金属、金属酸化物、及び有機物を含有する導電性膜であって、
前記導電性膜を厚さ方向に2分割したときに、片側半分のうちの一方は金属の濃度が高く、もう一方は金属酸化物の濃度が高いことを特徴とする、前記導電性膜。
[15] エッチング及び元素分析法によって測定された厚み方向の相対元素濃度プロファイルにおいて、前記片側半分のうち金属の濃度が高い方の金属の相対元素濃度が70%以上である、[14]に記載の導電性膜。
[16] エッチング及び元素分析法によって測定された厚み方向の相対元素濃度プロファイルにおいて、前記片側半分のうち金属の濃度が低い方の金属酸化物由来の酸素の相対元素濃度が1%以上、50%以下である、[14]に記載の導電性膜。
更に本発明によれば、第2に、耐熱性の低い基材に高温によるダメージを与えることなく、低抵抗な導電性薄膜を形成し得る分散体を得ることができる。
本実施形態の分散体は、第2の態様においては、金属粒子及び金属酸化物粒子から選択される粒子と、硫黄原子含有物、とを含有する。
以下、本発明の分散体に含まれる構成要素のそれぞれについて、詳細に説明する。
本実施形態の分散体における粒子は、金属粒子及び金属酸化物粒子から選択される。この粒子における金属及び金属酸化物としては、金、銀、銅、ニッケル、コバルト、錫、鉛、インジウム、アルミニウム、ジルコニウム、セリウム、ハフニウム、及びマグネシウム、並びにこれら金属の酸化物より成る群から選択される1種以上を含有する微粒子を用いることができる。特に、銅及び銅酸化物は、安価であり、焼成によって抵抗の低い配線を形成することができるため、好ましい。銅及び銅酸化物の具体例としては、例えば、銅、酸化第一銅、酸化第二銅、その他の酸化数を持つ酸化銅等から成る粒子の他、
コア部が銅でありシェル部が酸化銅であるコア/シェル構造を有する粒子等が挙げられる。これらの中でも、酸化第一銅及び酸化第二銅は、分散性が優れる傾向にあるので好ましい。酸化第一銅は低温焼結し易い傾向にあるので特に好ましい。これらは、少量の不純物として金属塩若しくは金属錯体又はその双方を含んでもよい。
これらは、単独で用いてもよいし、複数種を混合して用いてもよい。
(1)ポリオール溶剤中に、水及び銅アセチルアセトナト錯体を加え、一旦有機銅化合物を加熱溶解させ、次に、反応に必要な量の水を後添加し、更に昇温して有機銅の還元温度において加熱して還元する方法。
(2)有機銅化合物(銅-N-ニトロソフェニルヒドロキシルアミン錯体)を、ヘキサデシルアミン等の保護剤の存在下、不活性雰囲気中で、300℃程度の高温で加熱する方法。
(3)水溶液に溶解した銅塩をヒドラジンで還元する方法。
上記(2)の方法は、例えば、ジャーナル・オブ・アメリカン・ケミカル・ソサイエティ・1999年、121巻、p.11595に記載の条件で行うことができる。
銅塩を溶解した水溶液には、水溶性有機化合物を添加してもよい。該水溶液に水溶性有機化合物を添加することによって該水溶液の融点が下がるから、より低温における還元が可能となる。水溶性有機化合物としては、例えば、アルコール、水溶性高分子等を用いることができる。
上記(3)の方法における還元の際の温度は、例えば-20~60℃とすることができ、-10~30℃とすることが好ましい。この還元温度は、反応中一定でもよいし、途中で昇温又は降温してもよい。ヒドラジンの活性が高い反応初期は、10℃以下で還元することが好ましく、0℃以下で還元することがより好ましい。還元時間は、30分~300分とすることが好ましく、90分~200分とすることがより好ましい。還元の際の雰囲気は、窒素、アルゴン等の不活性雰囲気であることが好ましい。
この中でも、(3)の方法は操作が簡便で、且つ、粒径の小さい粒子が得られるので好ましい。
本実施形態の分散体の第1の態様における分散体は、反転印刷適性及び塗布膜平滑性の向上と、長期保管安定性向上と、を目的として、分散剤を含有している。以下に、該分散剤について詳細に記述する。
結合又は吸着とは、2物質間に水素結合、共有結合、金属結合、イオン結合、配位結合、分子間力、疎水相互作用、親水相互作用、π-π相互作用、σ-π相互作用、その他電子的相互作用等の、何らかの引力が働いている状態をいう。
図1(b)のように分岐構造でもよいし;
図1(c)のように、側鎖に結合性構造を有するグラフトポリマー様の構造でもよいし;
図1(d)のように、星形ポリマーの各末端に結合性構造を有する構造でもよいし;
これらの構造の複数種を組み合わせて成る構造でもよい。
分散剤の一分子中に含まれる結合性構造の数は、1個以上100個以下であることが好ましく、1個以上20個以下であることがより好ましく、1個以上10個以下であることが更に好ましい。分散剤一分子中に含まれる結合性構造が多すぎる場合、粒子同士を架橋し凝集させる傾向がある。しかしながら、分散剤一分子中に含まれる結合性構造の数が100個以下であれば十分な分散性を得ることができ、20個以下であれば粒子同士が凝集せず二次粒径を小さくすることができ、10個以下であれば比較的小さいエネルギーで粒子と分散剤との結合を解離することができるから、焼結が促進される。
ポリエチレングリコール及びポリプロピレングリコールから選択される骨格を有する分散剤は、印刷版に浸透し難く、印刷版が膨潤によって変形し難いため、より好ましい。印刷版には、後述する反転印刷に用いられる除去版、ブランケット等が含まれる。分散剤の主骨格中には、これらが単独で存在してもよいし、これらの共重合体が存在していてもよい。
分散剤として、具体的には、ポリ(エチレングリコール)メチルエーテルチオールを好適に用いることができる。
分子量31以上1,000未満の領域に少なくとも1つのピークを有する低分子量分散剤と、
分子量1,000以上40,000以下の領域に少なくとも1つのピークを有する高分子量分散剤と、
を含有する。
ここで「ピーク」とは、分子量分布曲線における傾き(縦軸の強度値を横軸の分子量で微分した値)が正の値からゼロを介して負の値へと変化する明確なピークを意味し、分子量分布曲線の傾きの符号が変化しない、いわゆる「ショルダー」は含まない。ピークは、上記の各領域に1つずつ存在していてもよいし、上記領域のいずれか又はその双方に複数が存在してもよい。
40,000以下であれば、該分散剤が溶媒に溶解し易くなり、粒子及び分散剤の濃度を上げることができるため好ましく;
20,000以下であれば、長期保管安定性が向上するためより好ましく;
7,000以下であれば、高い分散性を得ることができるため、更に好ましい。
GPC測定条件は、例えば以下のとおりである。
ポンプ:Waters616
RI検出器:島津RID-10A
オートサンプラー:島津SIL-10Avp
カラム:TSKgel G3000PWXI+G2500PWXI(7.8mmID×30cm)
カラム温度:40℃
溶離液溶媒:pH=3.5リン酸水溶液
流速:1.0ml/min
注入量:10μl
標準試料:ポリエチレンオキサイド(Aldrich社、PRODUCT No.02393)
分散体を測定試料とする際には、該分散体に下処理を加えてもよい。下処理をすることにより、分散体から分散剤を単離することができるため、好ましい。この下処理の方法としては、例えば、抽出、蒸留、濃縮、希釈、pH調整、酸の添加、塩基の添加、濾過、凝集剤の添加、加熱及び乾燥、冷却、真空乾燥、緩衝液の添加、イオン交換、遠心分離等を用いることができる。これらの下処理は、単独で行ってもよいし、これらの複数を組み合わせた複合的な下処理を行ってもよい。
(1)酸の添加
本下処理方法は、分散体に酸を加えることによって金属又は金属酸化物の粒子を溶解したうえで、GPC測定を行う方法である。
分散体に加える酸としては、例えば、硫酸、硝酸、シュウ酸、酢酸、塩酸等を挙げることができる。得られた溶液中の金属イオンをイオン交換樹脂により他のイオン種に交換してもよい。この場合の他のイオン種としては、例えば、水素、ナトリウム、カルシウム、カリウム等を用いることができる。
酸を添加した後の溶液に、塩基を加えて溶液を中和したうえで測定に供してもよい。この場合の塩基としては、例えば、水酸化ナトリウム、水酸化カリウム、水酸化カルシウム、炭酸カルシウム、炭酸ナトリウム、炭酸水素ナトリウム等を挙げることができる。
上記の処理によって沈殿物が発生した場合には、該沈殿物を濾過したうえで測定に供することが好ましい。
上記酸溶液に、分散体の溶媒と混和しない溶剤を加え、有機成分を該溶剤中に抽出し、これを濃縮したうえで測定に供してもよい。
本下処理方法は、分散体に塩基を加えることによって、金属又は金属酸化物の粒子と分散剤との間の結合を解離させたうえで、GPC測定を行う方法である。
分散体中の分散剤がカルボン酸、ホスホン酸、スルホン酸等の酸性の構造を有している場合、該分散体に塩基を加えることにより、粒子と分散剤との結合を解離させることができる。このことを利用して、粒子と分散剤とを分離させて分析する方法である。
分離した粒子を遠心分離により沈殿させ、上澄みを分析してもよい。分離した分散剤を抽出して分析してもよい。
本下処理方法は、分散体を加熱及び乾燥することによって、金属又は金属酸化物の粒子と分散剤との間の結合を解離させたうえで、GPC測定を行う方法である。
分散体を加熱及び乾燥することによっても、粒子と分散剤との間の結合を解離させ、粒子を凝集させることができる。このことを利用して、粒子と分散剤とを分離させて分析する方法である。
分離した粒子及び分散剤に溶媒を加え、分散剤を抽出して得られた抽出液を分析してもよいし;
上記の抽出液に残留した粒子を濾別又は遠心分離によって除去して得られた溶液を分析してもよい。
GPCで測定したポリエチレングリコール換算分子量が1,000以上40,000以下である高分子量分散剤の割合は、
GPCで測定したポリエチレングリコール換算分子量が31以上1,000未満である低分子量分散剤100質量部に対して、
5質量部以上500質量部以下であることが好ましい。低分子量分散剤100質量部に対する高分子量分散剤の割合が、500質量部以下であれば塗布膜の結晶化を防止して平滑性を向上できるため好ましく、300質量部以下であれば長期保管安定性を向上させることができるためより好ましく、100質量部以下であれば高い分散性を得ることができるため更に好ましい。この値が5重量部以上であれば、塗膜強度が向上して反転印刷時の除去性が向上するため好ましい。この値は、より好ましくは10質量部以上、更に好ましくは20質量部以上である。
低分子量分散剤の割合が1質量部~20質量部であり、
高分子量分散剤の割合が0.1質量部~10質量部である、
ことが、良好な反転印刷性を発現する観点から、好ましい。
本実施形態の分散体は、第2の態様において、硫黄原子含有物を含有する。
ここで、硫黄原子含有物とは、分子構造の中に硫黄原子を含む有機物又は無機物である。本実施形態の分散体に硫黄原子含有物を添加することにより、塗膜に導電性を付与するための焼成温度を低くすることができ、高温焼成による基材のダメージを低減することができる。
導電性の付与が低温焼成で足りる理由としては、硫黄原子の還元力によって、
分散体に含有される粒子が金属粒子の場合には、その酸化が防止され、
分散体に含有される粒子が金属酸化物粒子の場合には、その還元が促進されるため、
低い焼成温度においても低抵抗の導電性膜が得られることによると考えられる。
コア部が銅でありシェル部が酸化銅であるコア/シェル構造を有する粒子等が挙げられる。これらの中でも、酸化第一銅及び酸化第二銅は、分散性が優れる傾向にあるので好ましい。酸化第一銅は低温焼結し易い傾向にあるので特に好ましい。これらは、少量の不純物として金属塩若しくは金属錯体又はその双方を含んでもよい。
本実施形態における粒子としては、上記のうちの1種を単独で用いてもよいし、複数種を混合して用いてもよい。
-SH基を有する有機物として例えば、高分子の主骨格に-SH基を導入した化合物を用いることができる。
フルオロアルカンチオールとして、例えば、11-メルカプトウンデシルトリフルオロアセテート、1H,1H,2H,2H-パーフルオロデカンチオール、3,3,4,4,5,5,6,6,6-ノナフルオロ-1-ヘキサンチオール等を用いることができる。
分岐アルカンチオールとして、例えば、2-エチルヘキサンチオール、2-メチル-1-プロパンチオール、2-メチルー2-プロパンチオール、3-メチル-1-ブタンチオール、tert-ドデシルメルカプタン、tert-ノニルメルカプタン等を用いることができる。
シアノ基を有するチオールとして例えば、4-シアノ-1-ブタンチオール等を用いることができる。
エステル結合を有するチオールとして、例えば、ブチル3-メルカプトプロピオネート、3-メルカプトプロピオン酸メチル等を用いることができる。
炭素間二重結合を有するチオールとして、例えば、cis-9-オクタデセン-1-チオール等)、ジチオール(1,11-ウンデカンジチオール、1,16-ヘキサデカンジチオール、1,2-エタンジチオール、1,3-プロパンジチオール、1,4-ブタンジチオール、1,5-ペンタンジチオール、1,6-ヘキサンジチオール、1,8-オクタンジチオール、1,9-ノナンジチオール、2,2‘-(エチレンジオキシ)ジエタンチオール、2,3-ブタンジチオール、5,5’-ビス(メルカプトメチル)-2,2‘-ビピリジン、ヘキサ(エチレングリコール)ジチオール、テトラ(エチレングリコール)ジチオール、ベンゼン-1,4-ジチオール、1,4-ベンゼンジメタンチオール等を用いることができる。
オキシエチレン骨格を有するチオールとして、例えば、(11-メルカプトウンデシル)テトラ(エチレングリコール)、トリエチレングリコールモノ-11-メルカプトウンデシルエーテル等を用いることができる。
複素環骨格を有するチオールとして、例えば、1(11-メルカプトウンデシル)イミダゾール、11-(1H-ピロール-1-イル)ウンデカン-1-チオール等を用いることができる。
アジド基を有するチオールとして例えば、11-アジド-1-ウンデカンチオール等を用いることができる。
カルボキシ基を有するチオールとして、例えば、11-メルカプトウンデカン酸、12-メルカプトドデカン酸、3-メルカプトプロピオン酸、6-メルカプトヘキサン酸、8-メルカプトオクタン酸等を用いることができる。
ホスホン酸基を有するチオールとして、例えば、11-メルカプトウンデシルホスホン酸等を用いることができる。
NHS基を有するチオールとして、例えば、12-メルカプトドデカン酸NHSエステル等を用いることができる。
ハロゲンを有するチオールとして、例えば、3-クロロ-1-プロパンチオール等を用いることができる。
脂環式化合物骨格を有するチオールとして、例えば、1-アダマンタンチオール、シクロヘキサンチオール、シクロペンタンチオール等を用いることができる。
ホウ素化合物骨格を有するチオールとして、例えば、m-カルボラン-1-チオール、m-カルボラン-9-チオール等を用いることができる。
これら-SH基を有する有機物は、単独で用いてもよいし、複数混合して用いてもよい。
-SH基を有する無機物としては例えば、チオ硫酸アンモニウム等を用いることができる。
硫黄原子が複数連続して結合した構造を有する化合物として、具体的には、例えば、2,2’-ジチオジエタノール、ジメチルトリスルフィド、ビス(ペンタメチレン)チウラムテトラスルフィド等を用いることができる。
分子量は、低分子量化合物については、各種の質量分析法(MS)により測定することができる。一方、高分子量化合物については、ゲルパーミエーションクロマトグラフィ(GPC)で測定できる。低分子量の目安としては分子量200未満であり、高分子量の目安としては分子量100以上である。
ポンプ:Waters616
RI検出器:島津RID-10A
オートサンプラー:島津SIL-10Avp
カラム:TSKgel G3000PWXI+G2500PWXI(7.8mmID×30cm)
カラム温度:40℃
溶離液:pH=3.5リン酸水溶液
流速:1.0ml/min
注入量:10μl
標準試料:ポリエチレンオキサイド(Aldrich社、PRODUCT No.02393)
0.1質量部以上であれば、特にプラズマ処理又はフラッシュランプアニール処理による抵抗減少効果を最大にすることができ;
1質量部以上であれば、加熱処理による抵抗減少効果を最大にすることができる。一方、この値が50質量部を超えると、硫黄原子含有物の残渣による抵抗増加により、有意な抵抗低減効果が見られない。
本実施形態における硫黄原子含有物としては、特に、-SH基を有する無機物と、硫黄単体と、硫黄原子が複数連続して結合した構造を有する化合物と、は、活性が高く、低抵抗化効果がより大きいため、好ましい。
本実施形態の分散体は、上記のような粒子と、分散剤又は硫黄原子含有物と、を必須の成分として含有する。しかしながら本実施形態の分散体は、これら以外に、その他の成分を更に含有していてもよい。このようなその他の成分としては、例えば、表面エネルギー調整剤、還元剤(前述の硫黄原子含有物を除く。)、有機バインダ―、溶媒等を挙げることができることができる。これらの他に、第2の態様における分散体はリン酸基を有する化合物を更に含有していてもよい。
リン酸基を有する化合物は、本実施形態の分散体が上記の粒子と、硫黄原子含有物と、を含有する、本実施形態の第2の態様における分散体に好ましく含有される。この場合、粒子中に好ましく存在する銅原子にリン酸基が吸着し、立体障害効果によって粒子の凝集を防止する。
リン酸基を有する化合物の重量平均分子量Mwは、特に制限はないが、300~30,000であることが好ましい。リン酸基を有する化合物の重量平均分子量Mwが300より低いと、得られる分散体の分散安定性が悪化する傾向がある。この値が30,000より高いと、塗布膜の焼成が困難になる。
第一工業製薬製の「プライサーフM208F」、「プライサーフDBS」等
を挙げることができる。これらは単独で用いてもよいし、複数を混合して用いてもよい。
本実施形態の分散体は、塗工性を向上させるため、表面エネルギー調整剤を含んでもよい。これにより、ブランケットへ分散体を塗布する時、得られる塗布膜の平滑性が向上し、従ってより均一な導電性膜が得られる。
表面エネルギー調整剤の具体例としては、商品名として、例えば、
Triton X-45、Triton X-100、Triton X、Triton A-20、Triton X-15、Triton X-114、Triton X-405、Tween #20、Tween #40、Tween #60、Tween #80、Tween #85、Pluronic F-68、Pluronic F-127、Span 20、Span 40、Span 60、Span 80、Span 83、Span 85等;
スリーエム製の「NovecFC-4430」、「NovecFC-4432」等;
DIC製の「メガファックF-444」、「メガファックF-558」等
が挙げられる。中でも含フッ素界面活性剤が特に好ましく、AGCセイミケミカル製の「サーフロンS-211」、「サーフロンS-221」、「サーフロンS-231」、「サーフロンS-232」、「サーフロンS-233」、「サーフロンS-242」、「サーフロンS-243」、及び「サーフロンS-611」;スリーエム製の「NovecFC-4430」及び「NovecFC-4432」;並びにDIC製の「メガファックF-444」及び「メガファックF-558」が好適に用いられる。これらは単独で用いてもよいし、複数を混合して用いてもよい。
本実施形態の分散体は、粘度調製、塗工性向上等のために、溶媒を含有してもよい。
本実施形態の分散体における溶媒としては、該分散体の用途に応じて様々な溶媒を用いることができる。例えば、高い平滑性が要求される用途においては高沸点溶媒を用いることが好ましく、速乾性が要求される用途においては低沸点溶媒を用いることが好ましい。
上記低沸点溶媒と高沸点溶媒を混合して用いてもよい。
例えば、本実施形態の分散体をインクジェット印刷に適用する場合、該分散体における高沸点成分及び不揮発成分の合計の含有量が、1~40質量%となる量とすることが好ましく、10~20質量%となる量とすることがより好ましい。この値を1質量%以上とすることにより、塗布膜の膜厚が十分に厚くなり、焼成処理によって導電性の高い銅配線を形成することができる。この値を40質量%以下とすることにより、分散剤の粘度をインクジェット印刷に適した範囲に調整することができ、更に20質量%以下とすることにより、インクジェット印刷機の印刷ヘッドの目詰まりが防止される。
本実施形態の分散体をスクリーン印刷に適用する場合、該分散体における高沸点成分及び不揮発成分の合計の含有量が、40~90質量%となる量とすることが好ましく、60~85質量%となる量とすることがより好ましい。
本実施形態の分散体を反転印刷に適用する場合、該分散体における高沸点成分及び不揮発成分の合計の含有量が、5~60質量%となる量とすることが好ましく、10~30質量%となる量とすることがより好ましい。
分散体は、前述の粒子と、分散剤と、任意的に配合されるその他の成分とを、それぞれ所定の割合で混合し、分散処理することにより、調製することができる。前記分散処理は、例えば、超音波法、ミキサー法、3本ロール法、2本ロール法、アトライター、バンバリーミキサー、ペイントシェイカー、ニーダー、ホモジナイザー、ボールミル、サンドミル等の適宜の装置を用いて行うことができる。
本実施形態の分散体を調製するに当たって、前述の粒子及び分散剤、並びに任意的に配合される溶媒、表面エネルギー調整剤、及びその他の成分の濃度を適宜に設定することによって、得られる分散体の粘度及び表面エネルギーを調整することができる。
本実施形態の分散体の25℃における表面自由エネルギーに特に制限はないが、好ましくは40mN/m以下、より好ましくは35mN/m以下、更に好ましくは30mN/m以下である。後述する反転印刷において、分散体のブランケットに対する濡れ性の点から、25℃における表面自由エネルギーは40mN/m以下が好ましい。表面自由エネルギーは接触角計を用いて測定することができる。
本実施形態の分散体は、これを基板上に塗布(印刷)し、焼成処理を施すことによって、所望のパターンを有する導電性膜から成る導電配線を形成することができる。
本実施形態における導電性膜の形成方法は、
基材上に本実施形態の分散体を塗布して塗布膜を形成する工程と、
前記塗布膜を加熱焼成する工程と
を含むことを特徴とする。
以下、本実施形態における導電性膜の形成方法について、詳細に説明する。
本実施形態における導電性膜の形成方法に用いられる基材としては、一般的なプリント基板の他に、樹脂基材、ガラス基材、シリコンウェハ、紙基材等を用いることができる。一般的なプリント基板とは、紙フェノール基板、紙エポキシ基板、ガラスコンポジット基板、ガラスエポキシ基板、テフロン基板、アルミナ基板、低温同時焼成セラミックス(LTCC)基板等である。
基材の厚さは、例えば1μm~10mmとすることができ、好ましくは25μm~250μmである。基材の厚さが250μm以下であれば、作製される電子デバイスを、軽量化、省スペース化、及びフレキシブル化できるため好ましい。
塗布膜の形成に先立って、基材を洗浄してもよい。基材の洗浄方法として、例えば、薬液を用いる湿式処理;コロナ放電、プラズマ、UV、オゾン等を用いる乾式処理等を用いることができる。
上記のようにして形成された塗布膜が溶媒を含有する場合には、次いで該塗布膜から、好ましくは溶媒を除去する。この溶媒の除去は、塗布後の膜を、例えば20~150℃において、例えば1分~2時間静置する方法によることができる。この場合の加熱方法としては、例えば、熱風乾燥、赤外線乾燥、真空乾燥等の手法を用いることができる。
本実施形態の分散体を用いて上記のような基材上に塗布膜を形成する方法は、特に制限されない。例えば、スクリーン印刷、スプレーコート、スピンコート、スリットコート、ダイコート、バーコート、ナイフコート、オフセット印刷、反転印刷、フレキソ印刷、インクジェット印刷、ディスペンサ印刷、グラビアダイレクト印刷、グラビアオフセット印刷等の方法を用いることができる。これらの方法のうち、より高精細のパターニングを行うことができるという観点から、反転印刷が好ましい。
本実施形態の分散体は、反転印刷によって基板上にパターン状の塗布膜を形成するために、特に好適に用いることができる。
反転印刷法においては、先ず、ブランケットの表面に均一な厚みの塗布膜を形成する。
ブランケットの表面は、通常、シリコーンゴムから構成されている。反転印刷においては、このシリコーンゴムに対して分散体が良好に付着し、均一な塗布膜が形成される必要がある。そのために、本実施形態の分散体の粘度及び表面自由エネルギーを、前述した範囲に選択することが望ましいのである。
そして、この状態のブランケットを被印刷基材の表面に押圧し、該ブランケット上に残ったパターン状の塗布膜を転写することにより、被印刷基材上にパターン状の塗布膜を形成することができる。
塗布膜の膜厚は、塗布方法に応じて選択することができる。
例えば、インクジェット印刷を適用する場合の塗布膜の膜厚は、溶媒除去後の値として、0.1~10μmとすることが好ましく、0.5~5μmとすることがより好ましい。
スクリーン印刷を適用する場合には、溶媒除去後の塗布膜厚値として、1~100μmとすることが好ましく、10~50μmとすることがより好ましい。
反転印刷を適用する場合には、溶媒除去後の塗布膜厚値として、0.01~5μmとすることが好ましく、0.1~1μmとすることがより好ましい。
塗布膜の表面粗さ(Ra)としては、12nm以下であることが好ましく、7nm以下であることがより好ましく、4nm以下であることが更に好ましい。Raが12nm以下であれば、反転印刷時に塗布膜が除去版と密着し、十分な除去性が得られる傾向がある。Raが7nm以下であれば、得られる導電性膜においても平坦な膜表面が維持される傾向がある。Raが4nm以下であれば、焼成ムラが非常に小さく、均一な電気特性が得られる傾向がある。
本実施形態の分散体を塗布することにより形成される塗布膜は、
第1の態様の分散体を使用した場合には、金属粒子又は金属酸化物粒子から選択される粒子と、分散剤と、を含み、
上記分散剤は、ゲルパーミエーションクロマトグラフィーで測定したポリエチレングリコール換算の分子量分布曲線において、分子量31以上1,000未満の領域に少なくとも1つのピークを有する低分子量分散剤と、分子量1,000以上40,000以下の領域に少なくとも1つのピークを有す高分子量分散剤と、を含み;
第2の態様の分散体を使用した場合には、銅及び銅酸化物からなる群より選択される1種以上を含有する粒子と、
-SH基を有する化合物、硫黄単体、及び硫黄原子が複数連続して結合した構造を有する化合物から成る群より選択される1種以上の硫黄原子含有物と、
を含む。
曲率半径の下限値は、例えば、0.1mm以上とすることができる。
上記のようにして形成された塗布膜を、次いで加熱して焼成処理を施すことにより、前記基材上に導電性膜を形成することができる。
本実施形態の導電性膜の製造方法における加熱焼成方法としては、塗布膜中に含有される粒子が融着して、金属微粒子の焼結膜を形成することができる方法であれば特に制限はない。
本実施形態における加熱焼成を熱媒体との接触による場合には、加熱焼成後に得られる導電性膜を酸化させないため、塗布膜の焼成は非酸化性雰囲気中において行うことが好ましい。分散体に含有される粒子が金属酸化物を含む場合には、該金属酸化物の還元を促進し、得られる導電性膜の抵抗をできるだけ低減するために、塗布膜の焼成は還元性雰囲気下において行うことが好ましい。
非酸化性雰囲気とは、酸素等の酸化性ガスを含まない雰囲気である。この非酸化性雰囲気としては、不活性雰囲気と還元性雰囲気とがある。不活性雰囲気とは、例えば、アルゴン、ヘリウム、ネオン、窒素等の不活性ガスで満たされた雰囲気である。還元性雰囲気とは、水素、一酸化炭素等の還元性ガスが存在する雰囲気を指す。
熱媒体との接触処理は、加圧雰囲気下で行なってもよいし、減圧雰囲気下で行なってもよい。
本実施形態におけるプラズマ処理とは、具体的には、試料を設置した空間にプラズマを発生させることにより、前記試料をプラズマに暴露させる処理である。
プラズマの発生方法に特に指定はないが、例えば、直流アーク放電、高周波電磁場、マイクロ波等を利用する方法を用いることができる。特に、マイクロ波を利用する方法は、低温でプラズマを発生することができるから、基材に与える熱ダメージが小さいため、好ましい。マイクロ波とは、具体的には、周波数が300MHz以上3THz以下の電磁波のことをいう。マイクロ波の中心周波数は、2GHz以上4GHz以下であることが好ましく、2.4GHz以上2.5GHz以下であることが更に好ましい。
マイクロ波の出力に特に指定はないが、100W以上3kW以下の出力であることが好ましい。マイクロ波の出力は、処理中一定でもよいし、途中で変化させてもよい。
プラズマ処理時の周囲雰囲気に特に指定はないが、還元性雰囲気であることが好ましい。周囲雰囲気は、例えば、放電容器内に適当なガスを流すことにより、制御することができる。ガスの流量に特に指定はないが、10SCCM以上1,000SCCM以下であることが好ましく、50SCCM以上5,600SCCM以下であることがより好ましく、100SCCM以上400SCCM以下であることが更に好ましい。特に、不活性ガスに少量の水素を混合して成る混合ガスを流すことによって還元性雰囲気を形成することが好ましい。この混合ガス中の不活性ガスとしては、例えば、窒素;ヘリウム、アルゴン等の希ガス等を用いることができる。混合ガス中の水素の含有量としては、0.1質量%以上10質量%以下であることが好ましく、より好ましくは2質量%以上6質量%以下である。
プラズマ処理時間に特に指定はないが、10秒以上30分以下であることが好ましく、30秒以上10分以下がより好ましく、1分以上5分以下が更に好ましい。
本実施形態におけるフラッシュランプアニール処理とは、試料に対して、エネルギー密度の高い光をパルス照射することにより、該試料を加熱する処理である。
フラッシュランプアニール処理に用いる光源としては、例えば、キセノンランプ、クリプトンランプ等を用いることができる。
光源の波長は、可視光領域であれば、透明樹脂基板へ熱ダメージを与えることなく塗布膜を焼成することができるため、好ましい。光源の波長は、カラーフィルタを介することにより、容易に制御することができる。
パルス当たりのエネルギーとしては、特に指定はないが、50J以上3,000J以下であることが好ましく、100J以上2,000J以下であることがより好ましく、150J以上1,500J以下であることが更に好ましい。
試料に対し、複数回パルス光を照射してもよい。パルス間隔に特に指定はないが、10μ秒以上1秒以下であることが好ましい。ここで、パルス間隔とは、パルス光の照射のためにランプに電力を投入した時刻から、次のパルス光の照射のためにランプに電力を投入した時刻までの時間をいう。
試料台の温度に特に指定はないが、30℃以上150℃以下であることが好ましい。この温度が150℃以下であれば、基材として、PET等の耐熱性の低い汎用樹脂基板を用いることができる。30℃以上であれば、緻密な導電性膜が得られる。
フラッシュランプアニール処理時の周囲雰囲気に特に指定はないが、還元性雰囲気であることが好ましい。この還元性雰囲気の具体例及びガス流量については、プラズマ処理時の還元性雰囲気について上記したところと同様である。
フラッシュランプアニール処理の後に、更に、加圧処理を行ってもよい。フラッシュランプアニール処理後に試料を加圧することによって、形成された導電性膜をより緻密にすることができるため、好ましい。加圧方法としては、例えば、ローラープレス、平板プレス等を用いることができる。特にローラープレスは大面積のプレスに向いているため、好ましい。
本実施形態の方法によれば、基材上に本実施形態の分散体を所望のパターンに直接描画してパターン状の塗布膜及び導電性膜を形成することができる。そのため、従来のフォトレジストを用いる手法と比較して、生産性を著しく向上させることができる。
更に、従来のフォトリソグラフィーでは作製が困難であった、直径7インチ以上の導電性膜積層体を、本実施形態の方法によって容易に製造することができる。
本実施形態の方法によって得られた導電性膜は、その表面粗さ(Ra)を、20nm以下、10nm以下、又は5nm以下とすることができる。Raが20nm以下であれば、局所的に膜厚の薄い場所が少なく、断線による不良を低減することができる。Raが10nm以下であれば、該導電性膜上に他の膜又は素子を更に積層する際に、欠陥が生じ難い傾向がある。Raが5nm以下であれば、該導電性膜上に更に積層する他の材料の結晶性を向上させることができるから、例えば、薄膜トランジスタの電極の形成に好適に用いることができる。
本実施形態の導線性膜の抵抗率は、200μΩcm以下であることが好ましく、100μΩcm以下であることがより好ましく、30μΩcm以下であることが更に好ましい。
1,000mm以下であることが好ましく、500mm以下であることがより好ましく、100mm以下であることが更に好ましい。1,000mm以下であれば人間の胴体に装着することが可能となり、500mm以下であれば人間の脚部に装着することが可能であり、100mm以下であれば人間の上肢に装着することが可能となる他、ロールトゥロールの製造方法を適用することが可能となる。
本実施形態の好ましい態様によると、該導電性膜は、主として金属層から成る表層と、微細な空孔を有する下層と、から成る2層膜である。
表層に含まれる金属酸化物由来の酸素の相対元素濃度は、20%以下であることが好ましく、15%以下であることがより好ましく、10%以下であることがさらに好ましく、0%であってもよい。
下層に含まれる金属酸化物由来の酸素の相対元素濃度は、1%以上であることが好ましく、5%以上であることがより好ましく、10%以上であることがさらに好ましく;50%以下であることが好ましく、30%以下であることがより好ましく、20%以下であることがさらに好ましい。この値が1%以上であれば基材と間の密着性が向上する。この値が50%以下であれば、導電性の高い表層との間の密着性が向上する。
使用機器:アルバック・ファイ社製、PHI5000 VersaProbe II
励起源:単色化Al Kα 15kV×3.3mA
光電子取出角:45度
Pass Energy:117.4eV(Survey scan)、23.5eV(Narrow scan)
測定値を相対元素濃度に換算するために用いる相対感度係数は、装置付属の値を用いることができる。相対感度係数の一例を以下に示す。
C 1s:0.314
O 1s:0.733
F 1s:1.000
Cu 2p3/2:2.626
ドライエッチングに用いるイオン、ラジカル等は、例えば、レーザー、マイクロ波、グロー放電、アーク放電、コロナ放電等によって生成することができる。生成したイオン等は、加速電圧によって加速したうえでエッチングに供してもよい。加速された高エネルギーのイオンは、試料表面に衝突することにより、試料をスパッタすることができる。
ドライエッチング装置としては、例えば、UV-オゾン洗浄装置、プラズマ洗浄装置、コロナ放電装置、スパッタ装置、反応性イオンエッチング装置、イオンビーム装置、収束イオンビーム装置、ガスクラスタイオンビーム装置、ナノ秒パルスレーザー装置、フェムト秒パルスレーザー装置等が例示される。
エッチング条件としては、例えば以下を例示することできる。
使用機器:アルバック・ファイ社製、PH15000 VersaProbe II
イオン種:アルゴンモノマーイオン
加速電圧:2kV
ラスター範囲:2mm四方
スパッタ間隔:1分
試料電流:1.36μA
エッチング及び元素分析を交互又は同時に行うことにより、膜の厚み方向の相対元素濃度プロファイルを取得することができる。エッチング及び元素分析は、真空中で行うことが好ましい。エッチング及び元素分析を大気中で行うと、エッチングによって露出した試料表面が大気暴露によって汚染、変質等してしまい、正確な分析を損なうことになるからである。エッチング及び元素分析を真空中で連続して行う手法としては、例えば、SIMS、スパッタ等と、XPS、AES、TOF-SIMS等とを併用する手法等が挙げられる。これらのうち、特にスパッタとXPSとの併用が好ましい。
厚み方向の相対元素濃度プロファイルは、例えば、装置としてアルバック・ファイ社製、PH15000 VersaProbeIIを使用し、上記XPS測定条件及びエッチング条件を使用することにより好適に取得することができる。
導電性膜の最表面から5nm程度は、焼成後に酸化され易く、雰囲気中の有機物を吸着し易い性質を有する。そのため、表層を表すデータとしては、最表面から5nm以上深い層のデータを使用することが好ましい。
以上述べてきたとおり、本実施形態によれば、微細化されたパターンを有する平滑性の高い導電性膜を得ることができる。このような導電性膜は、例えば、プリント基板、フレキシブルプリント基板、電磁波シールドシート、半導体デバイス(薄膜トランジスタ、ダイオード、強誘電体メモリ等)、メタルメッシュ透明導電膜等に好適に利用することができる。
メタルメッシュ透明導電膜は、透明基材上に、幅50μm以下の金属配線がメッシュ状に形成されたものをいう。このメタルメッシュ透明導電膜は、見かけ透明でありながら表面が電気的に低抵抗である特徴を有している。幅50μm以下の構造体は視認が困難であるため、メタルメッシュ透明導電膜の金属配線は基材上に存在しないかのように見える。更に、金属配線の存在しない領域(開口部)は光を透過する。そのため、メタルメッシュ透明導電膜は透明体として視認される。
本実施形態の分散体は、このメタルメッシュ透明導電膜における配線を形成する材料として、好適に利用することができる。
薄膜トランジスタは、ゲート電極、ゲート絶縁膜、半導体、ソース電極、及びドレイン電極が積層されて成る電子デバイスである。本実施形態の分散体は、ゲート電極、ソース電極、又はドレイン電極を形成する材料として、好適に利用することができる。
ソース電極-ドレイン電極間距離(チャネル長)は、50μm以下であることが好ましく、10μm以下であることがより好ましく、2μm以下であることが更に好ましい。チャネル長が小さいほど、薄膜トランジスタの動作周波数が向上する。
以下に示す比較例1-1~1-10及び実施例1-1~1-16で得られた分散体は、それぞれ、以下のようにして評価した。
得られた分散体につき、目視により濁りの程度を観察し、以下の基準にて評価した。この評価は、分散体試料中に微粒子の凝集体が存在している場合には、光の散乱によって該試料が濁って見える現象を利用した評価である。
濁りがなく均一であった場合:○(分散性良好)
僅かに濁りが見られた場合:△(分散性可)
濁りが著しく、不均一であった場合:×(分散性不良)
得られた分散体をガラス容器に封入した状態で25℃において静置し、沈殿が発生するまでの時間(日数)を調べた。この沈殿は、微粒子の再凝集によって発生するものと推察される。
得られた分散体を用いて、以下に示す手順の反転印刷により、L/S=5μm/5μmパターンをPETフィルム(東洋紡社製、A4300)上に形成した。
ブランケットの離形面となるPDMS平滑面にバーコータ―によりドライ膜厚約400nmになるように分散体を均一に塗布し、約1分間自然乾燥させて塗布膜を得た。その後、除去板を、ブランケット上の分散体塗布膜に押し付け、次いで離して、不要部分の塗布膜を除去した。続いて、PETフィルムをブランケット上に押し付けることにより、ブランケット上に形成されたパターンをPETフィルム上に転写した。
上記(3)で得たパターンの形状を、光学顕微鏡を用いて観察し、以下の基準により評価した。
L/S=5μm/5μmパターンが形成できていた場合:〇(微細印刷性良好)
L/S=5μm/5μmパターンに、除去不良又は転写不良があった場合:×(微細印刷性不良)
上記(3)で得たパターンの表面粗さは、菱化システム製の白色干渉計「VertScan」を用いて測定した。
マイクロ波プラズマ焼成機を用い、真空チャンバーにプロセスガス(水素3体積%、ヘリウム97体積%)を流量300sccmで導入しながら、出力1.5kWにて上記(3)で得た印刷物パターンを5分間焼成することにより、厚さ0.2μmの導電性膜を得た。得られた膜の寸法変化率は0.05%未満であり、しわ等の目立った変形は見られなかった。
上記(6)で得た導電性膜の体積抵抗率を、三菱化学製の低抵抗率計ロレスターGPを用いて測定した。測定結果は表2に示した。
水800g及び1,2-プロピレングリコール(和光純薬製)400gから成る混合溶媒中に、酢酸銅(II)一水和物(和光純薬製)80gを溶解し、ヒドラジン(和光純薬製)24gを加えて攪拌した後、遠心分離を用いて上澄みと沈殿物とに分離した。得られた沈殿物(1)0.3gに、分散剤として数平均分子量800のポリ(エチレングリコール)メチルエーテルチオール(アルドリッチ社製)0.040g及び溶媒としてn-ブタノール(和光純薬製)0.66gを加え、ホモジナイザーを用いて分散することにより、銅(I)酸化物粒子を含有する比較例1の分散体を得た。
比較例1の分散体に含有される粒子の平均二次粒径は35nmであった。
沈殿物(1)0.3gに加える分散剤の種類及び量、並びに溶媒の種類及び量を、それぞれ、表1に記載のとおりに変更した他は上記比較例1-1と同様の操作により、銅(I)酸化物粒子をそれぞれ含有する比較例1-2~1-10の分散体を得た。実施例1-1~1-12においては、それぞれ、分散剤として2種類の成分から成る混合物を使用した。
これらの分散体に含まれる粒子の平均二次粒径、及び上記の手法によって行った各種評価の結果を、表1に合わせて示す。
実施例1-1~1-12においてそれぞれ得られた分散体について、GPC測定を実施したところ、ポリエチレングリコール換算の分子量分布曲線において、分子量31以上1,000未満の領域と、分子量1,000以上40,000以下の領域とに、それぞれピークが検出された。
粒径150nm以下の銀ナノパウダー(品名「Silver nanopowder,<150nm Particle Size,99% trace metal basis」、Aldrich製)0.20gに、分散剤として数平均分子量6,000のポリ(エチレングリコール)メチルエーテルチオール(アルドリッチ社製)0.010g及び数平均分子量800のポリ(エチレングリコール)メチルエーテルチオール(アルドリッチ社製)0.030gの混合物を、溶媒として蒸留水0.76gを、それぞれ加え、ホモジナイザーを用いて分散することにより、銀粒子を含有する実施例1-13の分散体を得た。
実施例1-13の分散体に含有される微粒子の平均二次粒径は521nmであった。
分散剤の混合物における各成分の種類及び量を、それぞれ、表1に記載のとおりに変更した他は上記実施例1-13と同様の操作により、銀粒子をそれぞれ含有する実施例1-14~1-16の分散体を得た。
実施例1-13~1-16のそれぞれで得られた分散体について、GPC測定を実施したところ、ポリエチレングリコール換算の分子量分布曲線において、分子量31以上1,000未満の領域と、分子量1,000以上40,000以下の領域とに、それぞれピークが検出された。
これらの分散体に含まれる粒子の平均二次粒径、及び上記の手法によって行った各種評価の結果を、表1に合わせて示す。
PEG-MET 350:分子量356.48のO-(2-メルカプトエチル)-O’-メチル-ヘキサ(エチレングリコール)
PEG-MET 800:数平均分子量800のポリ(エチレングリコール)メチルエーテルチオール(アルドリッチ社製)
PEG-MET 2000:数平均分子量2,000のポリ(エチレングリコール)メチルエーテルチオール(アルドリッチ社製)
PEG-MET 6,000:数平均分子量6,000のポリ(エチレングリコール)メチルエーテルチオール(アルドリッチ社製)
ME-100SH:SUNBRIGHT ME-100SH(商品名、日油社製)、数平均分子量10,000のポリ(エチレングリコール)メチルエーテルチオール
ME-400SH:SUNBRIGHT ME-400SH(商品名、日油社製)、数平均分子量40,000のポリ(エチレングリコール)メチルエーテルチオール
PEG-COOH 600:分子量588.68のO-(2-カルボキシエチル)-O’-メチル-ウンデカエチレングリコール(アルドリッチ社製)
PEG-COOH 2000:数平均分子量2,000のO-メチル-O’-スクシニルポリエチレングリコール(アルドリッチ社製)
PEG-COOH 5000:数平均分子量5,000のO-(カルボキシメチル)-O’-メチルポリエチレングリコール(アルドリッチ社製)
PEG-PO3H2 400:11-{2-「2-(2-Methoxyethoxy)ethoxy」ethoxy}undecylphosphonic acid。分子量398.47.(同仁化学研究所製)
byk-145:Disperbyk-145、(商品名、ビックケミー社製)、分子量5,000のホスホン酸化合物
一方、実施例1、2、4、及び5において得られた塗布膜の顕微鏡写真を、図3(a)~(d)にそれぞれそれ示す。いずれも、平坦な塗布膜が得られていることが分かる。
これらのことから、本発明の分散体が反転印刷法による微細印刷に好適であることが検証された。
図6から、本実施例で得られた導電性膜は、比較的緻密な上層と、微小なボイドを有する下層とから成る二層膜であることが明らかとなった。XPS分析により、この上層は主として銅から成る金属層であり、下層は主として銅(I)酸化物及び有機物から成るハイブリッド層であることが分かった。本実施例の場合、基体のダメージは観察されなかった。
図7を見ると、本比較例で得られた膜は、表面平滑性が悪く、緻密な金属層が形成されていないことの他、基体がダメージを受けていることが分かった。
上記の比較例2-1~2-9及び実施例2-1~2-10の分散体を、それぞれ、PETフィルム(東洋紡社製、A4300、厚さ125μm)上にバーコータ―を用いて塗布して塗布膜を形成し、マイクロ波プラズマ焼成機を用い、真空チャンバーにプロセスガス(水素3体積%、ヘリウム97体積%)を流量300sccmで導入しながら、出力1.5kWにて前記塗布膜を5分間焼成することにより、厚さ0.2μmの導電性膜を得た。得られたすべてのフィルムの寸法変化は0.05%未満であり、しわ等の目立った変形は見られなかった。得られた導電性膜の体積抵抗率は表3に示す。
図9を参照すると、該導電性膜の表層は、酸化銅由来の酸素元素濃度が低く、主として金属状態の銅から構成されていることが分かる。該導電性膜の下層は、酸化銅由来の酸素濃度が高く、酸化銅を多く含有することがわかる。図9では、導電性膜の最表面における銅元素濃度が低い。この現象は、焼成により導電性膜を形成した後の保管中に、膜の最表面が酸化されたこと、及び、空気中に存在する有機物に汚染されたことに起因すると考えられる。
水800g及び1,2-プロピレングリコール(和光純薬製)400gから成る混合溶媒中に、酢酸銅(II)一水和物(和光純薬製)80gを溶解し、ヒドラジン(和光純薬製)24gを加えて攪拌した後、遠心分離を用いて上澄みと沈殿物とに分離した。この沈殿物は、主に酸化銅(I)から成る、平均一次粒径15nmであり、平均二次粒径30nmの粒子であった。
得られた沈殿物30gに、分散剤としてDisperbyk-145(ビッグケミー製)4.0g及び溶媒としてn-ブタノール(和光純薬製)66gを加え、ホモジナイザーを用いて分散することにより、銅(I)酸化物粒子を含有する比較例2-1の分散体を得た。
比較例1の分散体1.0gに、表1に記載した種類及び量の硫黄原子含有物をそれぞれ加え、ホモジナイザ―を用いて撹拌することにより、銅(I)酸化物粒子をそれぞれ含有する、実施例2-1~2-5及び2-10、並びに比較例1-2~2-9の分散体をそれぞれ得た。
実施例2-1で使用の硫黄はα硫黄であり、
比較例1-8で使用の硫化銅(II)は硫化銅(II)五水和物である。
水800g及び1,2-プロピレングリコール(和光純薬製)400gから成る混合溶媒中に、酢酸銅(II)一水和物(和光純薬製)80gを溶解し、ヒドラジン(和光純薬製)24gを加えて攪拌した後、遠心分離で上澄みと沈殿物とに分離した。得られた沈殿物0.3gに、硫黄原子含有物として、数平均分子量800のポリ(エチレングリコール)メチルエーテルチオール(アルドリッチ社製)0.040g及び溶媒としてn-ブタノール(和光純薬製)0.66gを加え、ホモジナイザーを用いて分散することにより、銅(I)酸化物粒子を含有する実施例2-6の分散体を得た。
上記実施例2-6において、硫黄原子含有物として、表2に記載した種類及び量の化合物をそれぞれ使用した他は、実施例2-6と同様の手法により、銅(I)酸化物粒子をそれぞれ含有する実施例2-7~2-9の分散体をそれぞれ得た。
上記分散体を、それぞれ、PETフィルム(東洋紡社製、A4300、厚さ125μm)上にバーコータ―を用いて塗布して塗布膜を形成し、150℃に加熱したホットプレート上で10分間加熱することにより、厚さ0.2μmの導電性膜を得た。得られたすべてのフィルムの寸法変化は0.05%未満であり、しわ等の目立った変形は見られなかった。得られた導電性膜の体積抵抗率を表3に示す。比較例2-1の分散体では、抵抗の低下が見られず、抵抗率を測定することができなかった。
上記比較例2-1で得られた分散体1.0gに、表4に記載した種類及び量の硫黄原子含有物をそれぞれ加え、ホモジナイザ―を用いて撹拌することにより、実施例3-1~3-6の分散体をそれぞれ得た。
Claims (16)
- 金属粒子及び金属酸化物粒子から選択される粒子と、分散剤と、を含む分散体であって、
前記分散剤が、前記粒子に結合又は吸着可能な化学構造を有し、そして、
前記分散剤が、ゲルパーミエーションクロマトグラフィーで測定したポリエチレングリコール換算の分子量分布曲線において、分子量31以上1,000未満の領域に少なくとも1つのピークを有する低分子量分散剤と、分子量1,000以上40,000以下の領域に少なくとも1つのピークを有する高分子量分散剤と、を含むことを特徴とする、前記分散体。 - 前記粒子に結合又は吸着可能な化学構造が、アミノ基、チオール基、ホスホン酸基、ホスホン酸エステル基、スクシンイミド骨格を有する官能基、ピロリドン骨格を有する官能基、セレノール基、ポリスルフィド基、ポリセレニド基、カルボキシル基、酸無水物骨格を有する官能基、スルホン酸基、ニトロ基、及びシアノ基より成る群から選択される1種以上の官能基である、請求項1に記載の分散体。
- 前記低分子量分散剤が、ゲルパーミエーションクロマトグラフィーで測定したポリエチレングリコール換算の分子量分布曲線において、分子量350以上1,000未満の領域に少なくとも1つのピークを有する、請求項1又は2に記載の分散体。
- 前記分散剤中、低分子量分散剤100質量部に対する高分子量分散剤の割合が5質量部以上500重量部以下である、請求項1~3のいずれか一項に記載の分散剤。
- 前記粒子100質量部に対して、
低分子量分散剤の割合が1質量部~20質量部であり、
高分子量分散剤の割合が0.1質量部~10質量部である、請求項1~4のいずれか一項に記載の分散剤。 - 前記粒子が、銅及び銅酸化物から成る群より選択される1種以上を含有する、請求項1~5のいずれか一項に記載の分散剤。
- 前記粒子の平均二次粒子径が5nm以上1,000nm以下である、請求項1~6のいずれか一項に記載の分散剤。
- 前記分散剤が、ポリエチレングリコール及びポリプロピレングリコールから成る群より選択される1種以上の骨格を有する、請求項1~7のいずれか一項に記載の分散体。
- 基材上に請求項1~8のいずれか一項に記載の分散体を塗布して塗布膜を形成する工程と、
前記塗布膜を加熱焼成する工程と、
を含むことを特徴とする、導電性膜の製造方法。 - 前記加熱工程が、プラズマ処理、フラッシュランプアニール処理、又は熱媒体との接触処理によって行われる、請求項9に記載の導電性膜の製造方法。
- 銅及び銅酸化物からなる群より選択される1種以上を含有する粒子と、
-SH基を有する化合物、硫黄単体、及び硫黄原子が複数連続して結合した構造を有する化合物から成る群より選択される1種以上の硫黄原子含有物と、
を含むことを特徴とする、分散体。 - 金属粒子及び金属酸化物粒子から選択される粒子と、分散剤と、を含む膜であって、
前記分散剤が、前記粒子に結合又は吸着可能な化学構造を有し、そして
前記分散剤が、ゲルパーミエーションクロマトグラフィーで測定したポリエチレングリコール換算の分子量分布曲線において、分子量31以上1,000未満の領域に少なくとも1つのピークを有する低分子量分散剤と、分子量1,000以上40,000以下の領域に少なくとも1つのピーク有する高分子量分散剤と、を含むことを特徴とする、前記膜。 - 銅及び銅酸化物からなる群より選択される1種以上を含有する粒子と、
-SH基を有する化合物、硫黄単体、及び硫黄原子が複数連続して結合した構造を有する化合物から成る群より選択される1種以上の硫黄原子含有物と、
を含むことを特徴とする、膜。 - 少なくとも金属、金属酸化物、及び有機物を含有する導電性膜であって、
前記導電性膜を厚さ方向に2分割したときに、片側半分のうちの一方は金属の濃度が高く、もう一方は金属酸化物の濃度が高いことを特徴とする、前記導電性膜。 - エッチング及び元素分析法によって測定された厚み方向の相対元素濃度プロファイルにおいて、前記片側半分のうち金属の濃度が高い方の金属の相対元素濃度が70%以上である、請求項14に記載の導電性膜。
- エッチング及び元素分析法によって測定された厚み方向の相対元素濃度プロファイルにおいて、前記片側半分のうち金属の濃度が低い方の金属酸化物由来の酸素の相対元素濃度が1%以上50%以下である、請求項14に記載の導電性膜。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/578,879 US11104813B2 (en) | 2015-06-02 | 2016-06-02 | Dispersion |
JP2017522266A JP6605027B2 (ja) | 2015-06-02 | 2016-06-02 | 分散体 |
CN201680031360.5A CN107614614B (zh) | 2015-06-02 | 2016-06-02 | 分散体 |
KR1020177033952A KR102141450B1 (ko) | 2015-06-02 | 2016-06-02 | 분산체 |
EP16803481.7A EP3305853A4 (en) | 2015-06-02 | 2016-06-02 | Dispersion |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015112580 | 2015-06-02 | ||
JP2015112579 | 2015-06-02 | ||
JP2015-112579 | 2015-06-02 | ||
JP2015-112580 | 2015-06-02 | ||
JP2015-256929 | 2015-12-28 | ||
JP2015256929 | 2015-12-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2016195047A1 true WO2016195047A1 (ja) | 2016-12-08 |
Family
ID=57440585
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2016/066499 WO2016195047A1 (ja) | 2015-06-02 | 2016-06-02 | 分散体 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11104813B2 (ja) |
EP (1) | EP3305853A4 (ja) |
JP (3) | JP6605027B2 (ja) |
KR (1) | KR102141450B1 (ja) |
CN (1) | CN107614614B (ja) |
WO (1) | WO2016195047A1 (ja) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6298191B1 (ja) * | 2017-04-26 | 2018-03-20 | デクセリアルズ株式会社 | 活性エネルギー線硬化性樹脂組成物、防曇防汚積層体、及びその製造方法、物品、並びに防曇方法 |
JP2019029340A (ja) * | 2017-07-28 | 2019-02-21 | 旭化成株式会社 | 導電性パターンの製造方法、及びプラズマ処理装置 |
JP2019140283A (ja) * | 2018-02-13 | 2019-08-22 | 旭化成株式会社 | 金属配線の製造方法及び金属配線製造装置 |
JP2019210469A (ja) * | 2018-05-30 | 2019-12-12 | 旭化成株式会社 | インクジェット用酸化銅インク及びこれを用いて導電性パターンを付与した導電性基板の製造方法 |
JP2020004648A (ja) * | 2018-06-29 | 2020-01-09 | 旭化成株式会社 | 導電性パターンの製造方法、及びプラズマ処理装置 |
JP2020004647A (ja) * | 2018-06-29 | 2020-01-09 | 旭化成株式会社 | 導電性パターンの製造方法、及びプラズマ処理装置 |
WO2020049895A1 (ja) * | 2018-09-03 | 2020-03-12 | 住友化学株式会社 | 積層体及びその製造方法 |
JP2021077648A (ja) * | 2017-07-27 | 2021-05-20 | 旭化成株式会社 | 酸化銅インク及びこれを用いた導電性基板の製造方法、塗膜を含む製品及びこれを用いた製品の製造方法、導電性パターン付製品の製造方法、並びに、導電性パターン付製品 |
JP2021075714A (ja) * | 2019-11-06 | 2021-05-20 | 旭化成株式会社 | 分散体及びこれを用いた導電性パターン付構造体の製造方法 |
JP2021522397A (ja) * | 2018-05-03 | 2021-08-30 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung | 架橋された配位子 |
US11270809B2 (en) | 2017-03-16 | 2022-03-08 | Asahi Kasei Kabushiki Kaisha | Dispersing element, method for manufacturing structure with conductive pattern using the same, and structure with conductive pattern |
US11328835B2 (en) | 2017-03-16 | 2022-05-10 | Asahi Kasei Kabushiki Kaisha | Dispersing element, method for manufacturing structure with conductive pattern using the same, and structure with conductive pattern |
US11520451B2 (en) | 2018-07-30 | 2022-12-06 | Asahi Kasei Kabushiki Kaisha | Conductive film and conductive film roll, electronic paper, touch panel and flat-panel display comprising the same |
US11877391B2 (en) | 2018-07-30 | 2024-01-16 | Asahi Kasei Kabushiki Kaisha | Conductive film and conductive film roll, electronic paper, touch panel and flat-panel display comprising the same |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11104813B2 (en) * | 2015-06-02 | 2021-08-31 | Asahi Kasei Kabushiki Kaisha | Dispersion |
KR102458995B1 (ko) * | 2016-04-06 | 2022-10-25 | 바스프 에스이 | 표면 개질된 은 나노와이어를 포함하는 생성물의 제조 방법, 및 생성물의 용도 |
JP2019211243A (ja) * | 2018-05-31 | 2019-12-12 | 旭化成株式会社 | Rfidタグ |
JP2022506036A (ja) * | 2018-10-30 | 2022-01-17 | クローダ,インコーポレイティド | 微細粒子を水性又は極性の溶媒中に分散させる方法 |
JP7120890B2 (ja) * | 2018-11-16 | 2022-08-17 | 田中貴金属工業株式会社 | 金属配線を備える導電基板及び該導電基板の製造方法、並びに金属配線形成用の金属インク |
CN110289383B (zh) * | 2019-06-18 | 2021-12-03 | 深圳昌茂粘胶新材料有限公司 | 一种锂电池动力电池耐高温微孔薄膜材料及其制备方法 |
CN110993149A (zh) * | 2019-12-26 | 2020-04-10 | 无锡晶睿光电新材料有限公司 | 一种金属网格电容式柔性触摸屏用银浆及其制备方法与应用 |
WO2021157665A1 (ja) | 2020-02-07 | 2021-08-12 | 旭化成株式会社 | ヒアルロン酸誘導体、医薬組成物及びヒアルロン酸誘導体-薬物結合体 |
WO2022034755A1 (ja) * | 2020-08-13 | 2022-02-17 | 花王株式会社 | 金属ペースト |
WO2022034754A1 (ja) * | 2020-08-13 | 2022-02-17 | 花王株式会社 | 接合体の製造方法 |
WO2022211218A1 (ko) * | 2021-04-02 | 2022-10-06 | 한국과학기술원 | 액체금속 전구체 용액, 이를 이용한 금속막 제조방법 및 이를 포함하는 전자소자 |
CN116162391B (zh) * | 2022-12-28 | 2023-08-01 | 河南省科学院化学研究所 | 光热驱动限域固-液转变自修复防腐涂层材料及制备方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62292870A (ja) * | 1986-06-13 | 1987-12-19 | Toshiba Chem Corp | 導電性塗料 |
WO2003051562A1 (fr) * | 2001-12-18 | 2003-06-26 | Asahi Kasei Kabushiki Kaisha | Dispersion d'oxyde metallique |
JP2006273936A (ja) * | 2005-03-28 | 2006-10-12 | Japan Science & Technology Agency | 金属コロイド分散液および金属コロイド分散液の製造方法 |
WO2011040189A1 (ja) * | 2009-09-30 | 2011-04-07 | 大日本印刷株式会社 | 金属微粒子分散体、導電性基板の製造方法及び導電性基板 |
JP2013206721A (ja) * | 2012-03-28 | 2013-10-07 | Fujifilm Corp | 液状組成物、金属膜、及び導体配線、並びに金属膜の製造方法 |
JP2014071963A (ja) * | 2012-09-27 | 2014-04-21 | Fujifilm Corp | 導電膜形成用組成物および導電膜の製造方法 |
JP2014088550A (ja) * | 2012-10-03 | 2014-05-15 | Dainippon Printing Co Ltd | 金属粒子分散体、並びに、当該金属粒子分散体を用いた物品、焼結膜及び焼結膜の製造方法 |
JP2014199720A (ja) * | 2013-03-29 | 2014-10-23 | 富士フイルム株式会社 | 導電膜形成用組成物およびこれを用いる導電膜の製造方法 |
JP2015210973A (ja) * | 2014-04-28 | 2015-11-24 | 大日本印刷株式会社 | 銅ナノ粒子分散体、及び導電性基板の製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4622626Y1 (ja) | 1968-11-26 | 1971-08-05 | ||
DE10393790B4 (de) * | 2002-12-03 | 2013-05-16 | Asahi Kasei Kabushiki Kaisha | Kupferoxid-Ultrafeinteilchen |
JP4493942B2 (ja) | 2003-06-26 | 2010-06-30 | 旭化成イーマテリアルズ株式会社 | 酸化第一銅コロイド分散液 |
JP4622626B2 (ja) | 2005-03-30 | 2011-02-02 | 凸版印刷株式会社 | 導電性パターンの形成方法 |
JP5084145B2 (ja) | 2006-01-25 | 2012-11-28 | 株式会社日本触媒 | ナノ粒子分散体の保存方法及び輸送方法 |
US7625637B2 (en) * | 2006-05-31 | 2009-12-01 | Cabot Corporation | Production of metal nanoparticles from precursors having low reduction potentials |
JP5623861B2 (ja) | 2010-10-14 | 2014-11-12 | 株式会社東芝 | 金属ナノ粒子分散組成物 |
JP5712975B2 (ja) | 2012-07-06 | 2015-05-07 | 東京エレクトロン株式会社 | 計測用基板、基板処理装置及び基板処理装置の運転方法 |
WO2014017323A1 (ja) | 2012-07-26 | 2014-01-30 | Dic株式会社 | 反転印刷用導電性インキ及び薄膜トランジスタの製造方法及び該製造法方法で形成された薄膜トランジスタ |
JP5972187B2 (ja) * | 2013-02-04 | 2016-08-17 | 富士フイルム株式会社 | 導電膜形成用組成物、導電膜の製造方法 |
JP6008891B2 (ja) * | 2013-03-15 | 2016-10-19 | 富士フイルム株式会社 | 着色感放射線性組成物、着色硬化膜、カラーフィルタ、着色パターン形成方法、カラーフィルタの製造方法、固体撮像素子及び液晶表示装置 |
US11104813B2 (en) * | 2015-06-02 | 2021-08-31 | Asahi Kasei Kabushiki Kaisha | Dispersion |
US20180311892A1 (en) * | 2016-02-26 | 2018-11-01 | Hewlett-Packard Development Company, L.P. | Color printing and three-dimensional (3d) printing |
-
2016
- 2016-06-02 US US15/578,879 patent/US11104813B2/en active Active
- 2016-06-02 KR KR1020177033952A patent/KR102141450B1/ko active IP Right Grant
- 2016-06-02 JP JP2017522266A patent/JP6605027B2/ja active Active
- 2016-06-02 EP EP16803481.7A patent/EP3305853A4/en active Pending
- 2016-06-02 WO PCT/JP2016/066499 patent/WO2016195047A1/ja active Application Filing
- 2016-06-02 CN CN201680031360.5A patent/CN107614614B/zh active Active
-
2019
- 2019-10-15 JP JP2019188692A patent/JP7257305B2/ja active Active
-
2021
- 2021-09-27 JP JP2021156941A patent/JP2022001645A/ja active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62292870A (ja) * | 1986-06-13 | 1987-12-19 | Toshiba Chem Corp | 導電性塗料 |
WO2003051562A1 (fr) * | 2001-12-18 | 2003-06-26 | Asahi Kasei Kabushiki Kaisha | Dispersion d'oxyde metallique |
JP2006273936A (ja) * | 2005-03-28 | 2006-10-12 | Japan Science & Technology Agency | 金属コロイド分散液および金属コロイド分散液の製造方法 |
WO2011040189A1 (ja) * | 2009-09-30 | 2011-04-07 | 大日本印刷株式会社 | 金属微粒子分散体、導電性基板の製造方法及び導電性基板 |
JP2013206721A (ja) * | 2012-03-28 | 2013-10-07 | Fujifilm Corp | 液状組成物、金属膜、及び導体配線、並びに金属膜の製造方法 |
JP2014071963A (ja) * | 2012-09-27 | 2014-04-21 | Fujifilm Corp | 導電膜形成用組成物および導電膜の製造方法 |
JP2014088550A (ja) * | 2012-10-03 | 2014-05-15 | Dainippon Printing Co Ltd | 金属粒子分散体、並びに、当該金属粒子分散体を用いた物品、焼結膜及び焼結膜の製造方法 |
JP2014199720A (ja) * | 2013-03-29 | 2014-10-23 | 富士フイルム株式会社 | 導電膜形成用組成物およびこれを用いる導電膜の製造方法 |
JP2015210973A (ja) * | 2014-04-28 | 2015-11-24 | 大日本印刷株式会社 | 銅ナノ粒子分散体、及び導電性基板の製造方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP3305853A4 * |
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11270809B2 (en) | 2017-03-16 | 2022-03-08 | Asahi Kasei Kabushiki Kaisha | Dispersing element, method for manufacturing structure with conductive pattern using the same, and structure with conductive pattern |
JP7477581B2 (ja) | 2017-03-16 | 2024-05-01 | 旭化成株式会社 | 分散体並びにこれを用いた導電性パターン付構造体の製造方法及び導電性パターン付構造体 |
US11328835B2 (en) | 2017-03-16 | 2022-05-10 | Asahi Kasei Kabushiki Kaisha | Dispersing element, method for manufacturing structure with conductive pattern using the same, and structure with conductive pattern |
JP2018183939A (ja) * | 2017-04-26 | 2018-11-22 | デクセリアルズ株式会社 | 活性エネルギー線硬化性樹脂組成物、防曇防汚積層体、及びその製造方法、物品、並びに防曇方法 |
JP6298191B1 (ja) * | 2017-04-26 | 2018-03-20 | デクセリアルズ株式会社 | 活性エネルギー線硬化性樹脂組成物、防曇防汚積層体、及びその製造方法、物品、並びに防曇方法 |
US11760895B2 (en) | 2017-07-27 | 2023-09-19 | Asahi Kasei Kabushiki Kaisha | Copper oxide ink and method for producing conductive substrate using same, product containing coating film and method for producing product using same, method for producing product with conductive pattern, and product with conductive pattern |
JP7076591B2 (ja) | 2017-07-27 | 2022-05-27 | 旭化成株式会社 | 酸化銅インク及びこれを用いた導電性基板の製造方法、塗膜を含む製品及びこれを用いた製品の製造方法、導電性パターン付製品の製造方法、並びに、導電性パターン付製品 |
JP2021077648A (ja) * | 2017-07-27 | 2021-05-20 | 旭化成株式会社 | 酸化銅インク及びこれを用いた導電性基板の製造方法、塗膜を含む製品及びこれを用いた製品の製造方法、導電性パターン付製品の製造方法、並びに、導電性パターン付製品 |
JP2019029340A (ja) * | 2017-07-28 | 2019-02-21 | 旭化成株式会社 | 導電性パターンの製造方法、及びプラズマ処理装置 |
JP7254444B2 (ja) | 2018-02-13 | 2023-04-10 | 旭化成株式会社 | 金属配線の製造方法及び金属配線製造装置 |
JP2019140283A (ja) * | 2018-02-13 | 2019-08-22 | 旭化成株式会社 | 金属配線の製造方法及び金属配線製造装置 |
JP7434181B2 (ja) | 2018-05-03 | 2024-02-20 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | 架橋された配位子 |
JP2021522397A (ja) * | 2018-05-03 | 2021-08-30 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung | 架橋された配位子 |
JP7263124B2 (ja) | 2018-05-30 | 2023-04-24 | 旭化成株式会社 | インクジェット用酸化銅インク及びこれを用いて導電性パターンを付与した導電性基板の製造方法 |
JP2019210469A (ja) * | 2018-05-30 | 2019-12-12 | 旭化成株式会社 | インクジェット用酸化銅インク及びこれを用いて導電性パターンを付与した導電性基板の製造方法 |
JP2020004647A (ja) * | 2018-06-29 | 2020-01-09 | 旭化成株式会社 | 導電性パターンの製造方法、及びプラズマ処理装置 |
JP2020004648A (ja) * | 2018-06-29 | 2020-01-09 | 旭化成株式会社 | 導電性パターンの製造方法、及びプラズマ処理装置 |
JP7174543B2 (ja) | 2018-06-29 | 2022-11-17 | 旭化成株式会社 | 導電性パターンの製造方法、及びプラズマ処理装置 |
US11520451B2 (en) | 2018-07-30 | 2022-12-06 | Asahi Kasei Kabushiki Kaisha | Conductive film and conductive film roll, electronic paper, touch panel and flat-panel display comprising the same |
US11620028B2 (en) | 2018-07-30 | 2023-04-04 | Asahi Kasei Kabushiki Kaisha | Conductive film and conductive film roll, electronic paper, touch panel and flat-panel display comprising the same |
US11635863B2 (en) | 2018-07-30 | 2023-04-25 | Asahi Kasei Kabushiki Kaisha | Conductive film and conductive film roll, electronic paper, touch panel and flat-panel display comprising the same |
US11877391B2 (en) | 2018-07-30 | 2024-01-16 | Asahi Kasei Kabushiki Kaisha | Conductive film and conductive film roll, electronic paper, touch panel and flat-panel display comprising the same |
WO2020049895A1 (ja) * | 2018-09-03 | 2020-03-12 | 住友化学株式会社 | 積層体及びその製造方法 |
JP7159262B2 (ja) | 2019-11-06 | 2022-10-24 | 旭化成株式会社 | 分散体及びこれを用いた導電性パターン付構造体の製造方法 |
JP2021075714A (ja) * | 2019-11-06 | 2021-05-20 | 旭化成株式会社 | 分散体及びこれを用いた導電性パターン付構造体の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2020019963A (ja) | 2020-02-06 |
KR102141450B1 (ko) | 2020-08-05 |
US11104813B2 (en) | 2021-08-31 |
JPWO2016195047A1 (ja) | 2018-04-05 |
CN107614614B (zh) | 2020-03-31 |
JP7257305B2 (ja) | 2023-04-13 |
CN107614614A (zh) | 2018-01-19 |
EP3305853A4 (en) | 2018-12-05 |
KR20170139649A (ko) | 2017-12-19 |
JP2022001645A (ja) | 2022-01-06 |
US20180171159A1 (en) | 2018-06-21 |
EP3305853A1 (en) | 2018-04-11 |
JP6605027B2 (ja) | 2019-11-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7257305B2 (ja) | 分散体 | |
EP2785158B1 (en) | Conductive-pattern formation method and composition for forming conductive pattern via light exposure or microwave heating | |
EP2414109B1 (en) | Metallic ink | |
US8999204B2 (en) | Conductive ink composition, method for manufacturing the same, and method for manufacturing conductive thin layer using the same | |
JP7477581B2 (ja) | 分散体並びにこれを用いた導電性パターン付構造体の製造方法及び導電性パターン付構造体 | |
Chung et al. | Electrical wire explosion process of copper/silver hybrid nano-particle ink and its sintering via flash white light to achieve high electrical conductivity | |
TWI719646B (zh) | 具有導電性圖案區域之構造體及其製造方法以及積層體及其製造方法 | |
JP5525285B2 (ja) | 酸含有組成物を用いた構造部形成プロセス | |
Tam et al. | High copper loading metal organic decomposition paste for printed electronics | |
JP2022106695A (ja) | 分散体、塗膜を含む製品、導電性パターン付き構造体の製造方法、及び、導電性パターン付き構造体 | |
JP2010206197A (ja) | 酸含有組成物を用いた構造部形成プロセス | |
JP7208803B2 (ja) | 導電性パターン領域付構造体及びその製造方法 | |
US8808789B2 (en) | Process for forming conductive features | |
WO2016047306A1 (ja) | 金属酸化物粒子膜の製造方法、金属膜の製造方法 | |
JP2019178059A (ja) | 分散体の製造方法 | |
JP6767818B2 (ja) | 分散体及びプリント配線基板製造用基板 | |
JP7005709B2 (ja) | 分散体及びプリント配線基板製造用基板 | |
JP6748530B2 (ja) | 基板 | |
WO2021090893A1 (ja) | 導電性パターン付構造体及びその製造方法 | |
JP2022087105A (ja) | 分散体及びこれを用いた導電性パターン付構造体の製造方法 | |
JP2018044202A (ja) | プリント配線板を製造するためのキット、方法、及び基板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 16803481 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2017522266 Country of ref document: JP Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 20177033952 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15578879 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2016803481 Country of ref document: EP |