WO2016166889A1 - 撮像装置 - Google Patents
撮像装置 Download PDFInfo
- Publication number
- WO2016166889A1 WO2016166889A1 PCT/JP2015/061865 JP2015061865W WO2016166889A1 WO 2016166889 A1 WO2016166889 A1 WO 2016166889A1 JP 2015061865 W JP2015061865 W JP 2015061865W WO 2016166889 A1 WO2016166889 A1 WO 2016166889A1
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- WIPO (PCT)
- Prior art keywords
- light receiving
- electrodes
- receiving surface
- bonding
- electrode
- Prior art date
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- 238000003384 imaging method Methods 0.000 title claims abstract description 79
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
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Images
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- H01L27/144—Devices controlled by radiation
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Definitions
- an imaging device in which a plurality of electrodes electrically connected to the light receiving unit are arranged in a row, and a plurality of wirings joined to each of the plurality of electrodes in the imaging device are arranged in a row.
- the present invention relates to an imaging device including a wiring board.
- the imaging device manufactured by the wafer level CSP technology is small, it greatly contributes to reducing the diameter of the endoscope.
- a plurality of light receiving portions and a plurality of light receiving surface electrodes electrically connected to the respective light receiving portions are formed on the light receiving surface of the semiconductor wafer.
- the light receiving unit is a pixel area made up of a CMOS (Complementary Metal Oxide Semiconductor) image sensor, a CCD (Charge Coupled Device), or the like.
- a glass wafer is bonded to the light receiving surface of the semiconductor wafer to produce a bonded wafer.
- a plurality of through wirings reaching from the light receiving surface of the bonded wafer to the opposing surface are formed.
- the light receiving surface of the imaging device obtained by cutting the bonded wafer is covered with a cover glass.
- the light receiving unit since the light receiving unit is connected to the electrode on the opposite surface via the through wiring, it can transmit and receive an electrical signal.
- Japanese Patent Application Laid-Open No. 2014-75764 discloses an imaging apparatus 101 shown in FIG.
- a plurality of connection wirings are arranged in one through trench 110T instead of the plurality of through wirings.
- the imaging apparatus 101 includes an imaging element 110 to which a cover glass 130 is bonded by an adhesive layer 120, a wiring board 140, and a signal cable 150.
- the image sensor 110 is formed with a through trench 110T whose wall surface is inclined.
- the cover glass 130 and the adhesive layer 120 are extended to the outside of the edge of the inclined surface, that is, to the bottom surface of the through trench 110T. Since the light receiving surface electrode 112 of the light receiving surface 110SA extends to the bottom surface of the through trench 110T, the back surface of the light receiving surface electrode 112 is exposed at the bottom surface of the through trench 110T.
- a plurality of junction electrodes 114 each extending from the bottom surface of the through trench 110T (immediately above the light receiving surface electrode 112) are arranged.
- a bump 115 is disposed on the bonding electrode 114.
- the inclined surface 110SS is inclined at an acute first inclination angle ⁇ 1 with respect to the light receiving surface 10SA of the image sensor 110.
- Each of the plurality of bonding electrodes 114 is bonded to the plurality of first bonding electrodes 141 arranged at the end of the main surface 140SA of the wiring board 140 via the bump 115. That is, the main surface 140SA of the wiring board 140 is inclined at the first inclination angle ⁇ 1 with respect to the opposing surface 110SB of the image sensor 110.
- a signal cable 150 is bonded to a second bonding electrode (not shown) at the other end of the wiring board 140.
- the outer dimension (planar dimension) of the imaging device 101 is the same as the outer dimension of the image sensor 110. The same.
- the imaging element 110 and the wiring board 140 are fixed only at the junction between the junction electrode 114 and the junction electrode 141. For this reason, the image pickup apparatus 101 has a mechanical strength that is not sufficient and is easily damaged when handled, and there is a possibility that the yield is not high.
- An object of the present invention is to provide an imaging device with a high yield.
- An imaging apparatus is inclined at an acute first angle with respect to a light receiving surface on which a light receiving unit is formed, a facing surface facing the light receiving surface, and the light receiving surface.
- a wiring board having a plurality of second bonding electrodes on the main surface, wherein the transparent member and the plurality of light receiving surface electrodes are extended to the outside of the edge of the inclined surface, An imaging device in which the back surface of the light receiving surface electrode is exposed to the facing surface side, wherein the imaging element extends from the back surface of each of the plurality of light receiving surface electrodes to the facing surface through the inclined surface. And a plurality of each having a first bonding electrode on the opposing surface.
- a wiring pattern wherein the main surface of the wiring board and the facing surface of the imaging element are arranged in parallel, and the first bonding electrode and the second bonding electrode are bonded via a bump. Yes.
- an imaging device with a high yield can be provided.
- FIG. 4 is a cross-sectional view of the imaging apparatus according to the first embodiment taken along line IV-IV in FIG. 3. It is a fragmentary perspective view of the imaging device of a 2nd embodiment. It is an exploded view of the imaging device of 3rd Embodiment.
- FIG. 1 ⁇ First Embodiment>
- FIG. 1 The drawings are schematic, and the relationship between the thickness and width of each member, the thickness ratio of each member, the number of bonding electrodes, the array pits, and the like are different from the actual ones. Moreover, the part from which the relationship and ratio of a mutual dimension differ also in between drawings is contained. Further, some configurations, for example, the silicon oxide layer and the wiring on the surface of the silicon substrate are not shown, and the electronic components and the like may be omitted.
- the imaging device 1 includes an imaging element 10 made of a silicon substrate, a cover glass 30 that is a transparent member, a wiring board 40, and a signal cable 50.
- the light receiving surface 10SA of the image sensor 10 is covered with a cover glass 30 through an adhesive layer 20.
- the imaging device 10 has a configuration similar to the imaging device 110 of the conventional imaging device 101 already described. That is, the imaging element 10 made of silicon is tilted at a first angle ⁇ 1 that is an acute angle with respect to the light receiving surface 10SA on which the light receiving unit 11 is formed, the opposing surface 10SB that faces the light receiving surface 10SA, and the light receiving surface 10SA. And an inclined surface 10SS. On the light receiving surface 10SA, a plurality of light receiving surface electrodes 12 electrically connected to the light receiving unit 11 are arranged.
- the imaging element 10 is formed with a through trench 10T whose wall surface is an inclined surface 10SS.
- anisotropic etching can be preferably used.
- a wet etching method using a tetramethylammonium hydroxide (TMAH) aqueous solution, a potassium hydroxide (KOH) aqueous solution or the like is desirable, but reactive ion etching (RIE), chemical dry etching (CDE), etc.
- RIE reactive ion etching
- CDE chemical dry etching
- a dry etching method can also be used.
- anisotropic etching is performed on the (111) surface which is slower than the (100) surface.
- the wall surface of 10T is the (111) plane, and the inclined surface has an angle ⁇ 1 of 54.74 degrees with the (100) plane which is the light receiving surface 10SA.
- the cover glass 30, the adhesive layer 20, and the light-receiving surface electrode 12 of the image sensor 10 are extended to the outside of the end of the inclined surface 10SS of the through trench 10T.
- the light receiving surface electrode 12 is disposed on the light receiving surface of the silicon wafer that becomes the imaging element 10, and the glass wafer that becomes the cover glass 30 is bonded onto the light receiving surface electrode 12 via the adhesive layer 20.
- the adhesive layer 20 is made of, for example, a transparent ultraviolet curable resin. Note that a microlens array may be provided on the light receiving unit 11 and the periphery of the light receiving unit 11 may be bonded by an adhesive layer.
- the silicon wafer bonded with the glass wafer is etched away from the facing surface 10SB side. For this reason, the back surface of the light receiving surface electrode 12 is exposed on the bottom surface of the notch 10TT, in other words, outside the edge of the inclined surface 10SS.
- the image sensor 10 has a light receiving surface electrode 12 whose back surface is exposed on the opposite surface side, and an extended wiring pattern 13 that is electrically connected.
- the extended wiring pattern 13 is disposed from the bottom surface of the through trench 10T to the opposing surface 10SB via the inclined surface 10SS.
- the extended wiring pattern 13 is made of a low electrical resistance material such as gold, copper, or aluminum.
- a first bonding electrode 14 is disposed at a predetermined position of the extended wiring pattern 13 on the facing surface 10SB.
- the first bonding electrode 14 may be made of the same material as the extended wiring pattern 13, and a barrier layer such as a nickel layer / gold layer may be formed on the extended wiring pattern 13.
- Bumps 15 are disposed on the first bonding electrode 14.
- the bump 15 is, for example, a solder bump or a gold bump formed by a frame plating method or a paste printing method.
- the wiring board 40 is a flexible wiring board having a plurality of wirings 41 using, for example, polyimide as an insulating layer.
- the second main surface 40SB of the wiring board 40 is provided with a plurality of second bonding electrodes 44 that are electrically connected to the wiring 41, respectively.
- An electronic component (not shown) such as a chip capacitor is mounted on the first main surface 40SA.
- An electronic component may also be mounted on the second main surface 40SB.
- the conducting wire 51 of the signal cable 50 is joined to the cable joining electrode 42 arranged on the rear end side of the second main surface 40SB of the wiring board 40.
- the signal cable 50 is also accommodated in the projection plane of the image sensor 10.
- the plurality of cable joining electrodes 42 may be disposed on the second main surface 40SB of the wiring board 40, or may be disposed on the first main surface 40SA and the second main surface 40SB. Good.
- the plurality of first bonding electrodes 14 and the plurality of second bonding electrodes 44 are arranged in a lattice shape so as to face each other.
- the first bonding electrode 14 and the second bonding electrode 44 are bonded via the bump 15.
- the imaging device 10 and the wiring board 40 are fixed to the opposing surface 10SB and the second main surface 40SB via the plurality of bumps 15 arranged in a lattice pattern. Furthermore, the joint between the first joint electrode 14 and the second joint electrode 44 is sealed with a sealing resin 18.
- the imaging device 1 includes the second main surface 40SB of the wiring board 40 in which the tip of the second main surface 40SB of the wiring board 40 and the facing surface 10SB of the imaging element 10 are arranged in parallel, and the imaging element 10.
- the facing surface 10SB is fixed by a plurality of bumps 15. For this reason, the imaging device 1 is inexpensive because it is less likely to be damaged when handled during manufacture, is easy to manufacture, and has a high yield.
- the imaging element 10 is a five-terminal element having five light receiving surface electrodes 12. There are five extended wiring patterns 13. On the other hand, there are nine first bonding electrodes 14 and nine second bonding electrodes 44 that are both arranged in a lattice pattern. That is, the four first bonding electrodes 14 and the four second bonding electrodes 44 are provided as so-called dummy electrodes that are electrically unnecessary or meaningless.
- five first bonding electrodes 14 such as first bonding electrodes 14A connected to one extended wiring pattern 13 are normal electrodes.
- the four first bonding electrodes 14 such as the first bonding electrodes 14B that are not connected to the one extended wiring pattern 13 are dummy electrodes.
- the imaging device 10 has four dummy electrodes 14B and the like that are not electrically connected to the light receiving surface electrode 12 on the opposing surface 10SB, and is bonded to four second bonding electrodes 44B and the like. Further, the five first bonding electrodes 14A and the like connected to the extended wiring pattern 13 are electrically connected to the five second bonding electrodes 44A and the like, respectively.
- the dummy electrode may be connected to one extended wiring pattern 13, but the second bonding electrode 44 bonded to such a dummy electrode needs to be electrically connected to the signal cable 50 or the like. There is no.
- the dummy electrode of the first bonding electrode 14 is disposed to more firmly fix the wiring board 40 and the image sensor 10.
- the wiring board 40 and the imaging element 10 are more firmly fixed. Since it is not damaged when handled during manufacturing, the yield is high.
- the wiring board 40 is bent at a rear end portion that is not bonded to the imaging element 10. For this reason, when viewed in plan from the thickness direction of the image sensor 10, the wiring board 40 is entirely disposed in an area inside the image sensor 10, that is, in a projection plane of the image sensor 10.
- the wiring board 40 may be a non-flexible substrate made of glass epoxy resin or the like. However, when the length is long, in order to accommodate the projection board of the image sensor 10, at least only the bent region is used. Must be flexible.
- the imaging device 1 has a small diameter because the wiring board 40 and the signal cable 50 do not protrude outside the outer shape of the imaging element 10.
- the tip of the wiring board 40 may be bonded to the substantially entire surface of the facing surface 10SB of the image sensor 10, and the bending angle may be an obtuse angle as long as it can be accommodated in the projection plane of the image sensor 10. Further, the wiring board 40 may be bent not only at the joint end with the imaging element 10 but also at the rear end.
- an imaging device 1A according to a modification of the second embodiment will be described. Since the image capturing apparatus 1A is similar to the image capturing apparatus 1, components having the same functions are denoted by the same reference numerals and description thereof is omitted. Further, in FIG. 5, illustration of a wiring board and the like is omitted.
- the imaging device 10 ⁇ / b> A of the imaging device 1 ⁇ / b> A is different from the imaging device 10 in that the inclined surface 10 ⁇ / b> SS inclined at the first angle ⁇ ⁇ b> 1 with respect to the light receiving surface 10 ⁇ / b> SA is used as a wall surface. Not (10T) but notch 10TT. That is, when the cutting line for cutting the bonded wafer is on the bottom surface of the through trench, the through trench is cut into 10TT due to the cutting.
- the first bonding electrodes 14 are alternately arranged in the longitudinal direction of two adjacent extended wiring patterns 13 in the longitudinal direction.
- the second bonding electrodes corresponding to the first bonding electrodes 14 are also arranged alternately.
- the first bonding electrode 14 is a part of the extended wiring pattern 13 in which the width of the extended wiring pattern 13 is widened. That is, the first bonding electrode 14 is made of the same material as the extended wiring pattern 13.
- the imaging device 1A has the effect of the imaging device 1. Further, when the first bonding electrode 14 and the second bonding electrode of the wiring board (not shown) are bonded, there is no possibility that the adjacent extended wiring pattern 13 is short-circuited, and the imaging device 1A is more than the imaging device 1. Yield is high.
- an imaging device 1B according to a modification of the third embodiment will be described. Since the imaging device 1B is similar to the imaging devices 1 and 1A, components having the same functions are denoted by the same reference numerals and description thereof is omitted.
- the end of the extended wiring pattern 13 of the imaging element 10B constitutes the first bonding electrode.
- the imaging device 1 ⁇ / b> B is provided with a first bonding electrode 14 ⁇ / b> C that is a dummy electrode.
- the second electric bonding electrode 44C facing the first bonding electrode 14C is bonded to the first bonding electrode 14C.
- the imaging device 1 ⁇ / b> B includes a first bonding electrode 14 ⁇ / b> C that is a dummy electrode in addition to the first bonding electrode 14 bonded to the extended wiring pattern 13.
- the first bonding electrodes 14 and 14C and the second bonding electrode 44 (44C) are arranged in a lattice pattern. Further, in the two adjacent extended wiring patterns 13, the first bonding electrodes 14 are alternately arranged in the longitudinal direction.
- the image pickup apparatus 1B has a high yield because the wiring board 40B and the image pickup element 10B are firmly fixed, so that they are not damaged when handled during manufacture.
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Abstract
撮像装置1は、受光面10SAと対向面10SBと受光面10SAに対して鋭角の第1の角度θ1で傾斜している傾斜面10SSと、を有し、受光面10SAに複数の受光面電極12が形成されている、撮像素子10と、受光面10SAを覆うように接着されているカバーガラス30と、第2の主面40SBに複数の第2の接合電極44を有する配線板40と、を具備し、複数の受光面電極12の裏面が対向面側に露出しており撮像素子10が、複数の受光面電極12のそれぞれの裏面上から傾斜面10SSを介して対向面10SBまで延設されており、それぞれが対向面10SBに第1の接合電極14を有する複数の延設配線パターン13を有し、配線板40の主面40SAと撮像素子10の対向面10SBとが平行に配置され、第1の接合電極14と第2の接合電極44がバンプ15を介して接合されている。
Description
本発明は、受光部と電気的に接続されている複数の電極が列設されている撮像素子と、前記撮像素子の前記複数の電極のそれぞれと接合されている複数の配線が列設されている配線板と、を具備する撮像装置に関する。
ウエハレベルCSP技術により作製される撮像装置は小型であるため、内視鏡の細径化に大きく寄与している。
ウエハレベルCSP型の撮像装置の製造方法では、最初に、半導体ウエハの受光面に、複数の受光部と、それぞれの受光部と電気的に接続された複数の受光面電極が形成される。受光部は、CMOS(Complementary Metal Oxide Semiconductor)イメージセンサ、または、CCD(Charge Coupled Device)等からなる画素エリアである。半導体ウエハの受光面にガラスウエハが接着され接合ウエハが作製される。そして、接合ウエハの受光面から対向する対向面まで到達する複数の貫通配線が形成される。
接合ウエハの切断により得られた撮像素子の受光面はカバーガラスで覆われている。しかし、受光部は貫通配線を介して対向面の電極と接続されているため、電気信号を送受信できる。
日本国特開2014-75764号公報には、図1に示す撮像装置101が開示されている。撮像装置101は、複数の貫通配線に替えて、1つの貫通トレンチ110Tに複数の接続配線を配置している。
撮像装置101は、カバーガラス130が接着層120により接着されている撮像素子110と、配線板140と、信号ケーブル150と、を有する。撮像素子110には壁面が傾斜している貫通トレンチ110Tが形成されている。カバーガラス130および接着層120は、前記傾斜面の端辺の外側、すなわち、貫通トレンチ110Tの底面まで延設されている。受光面110SAの受光面電極112は貫通トレンチ110Tの底面まで延設されているため、受光面電極112の裏面が貫通トレンチ110Tの底面に露出している。貫通トレンチ110Tの傾斜している壁面(傾斜面)110SSには、それぞれが貫通トレンチ110Tの底面(受光面電極112の直上)から延設された複数の接合電極114が列設されている。接合電極114にはバンプ115が配設されている。なお、傾斜面110SSは撮像素子110の受光面10SAに対して鋭角の第1の傾斜角度θ1で傾斜している。
複数の接合電極114のそれぞれは、バンプ115を介して配線板140の主面140SAの端部に列設された複数の第1の接合電極141と接合されている。すなわち、配線板140は主面140SAが、撮像素子110の対向面110SBに対して第1の傾斜角度θ1で傾斜している。そして、配線板140のもう一方の端部の第2の接合電極(不図示)には信号ケーブル150が接合されている。
なお、可撓性を有する配線板140および信号ケーブル150は、撮像素子110の投影面内に配置されているため、撮像装置101の外寸(平面視寸法)は、撮像素子110の外寸と同じである。
しかし、撮像装置101では、撮像素子110と配線板140とが、接合電極114と接合電極141との接合部だけで固定されている。このため、撮像装置101は、機械的強度が十分ではなく取り扱うときに破損しやすく、歩留まりが高くはないおそれがあった。
本発明は、歩留まりの高い撮像装置を提供することを目的とする。
本発明の実施形態の撮像装置は、受光部が形成されている受光面と、前記受光面と対向している対向面と、前記受光面に対して鋭角の第1の角度で傾斜している傾斜面と、を有し、前記受光面に前記受光部と電気的に接続された複数の受光面電極が形成されている、撮像素子と、前記受光面を覆うように接着されている透明部材と、主面に複数の第2の接合電極を有する配線板と、を具備し、前記透明部材および前記複数の受光面電極が前記傾斜面の端辺の外側まで延設されており、前記複数の受光面電極の裏面が前記対向面側に露出している撮像装置であって、前記撮像素子が、前記複数の受光面電極のそれぞれの裏面上から前記傾斜面を介して、前記対向面まで延設されており、それぞれが前記対向面に第1の接合電極を有する複数の延設配線パターンを有し、前記配線板の前記主面と前記撮像素子の前記対向面とが平行に配置され、前記第1の接合電極と前記第2の接合電極がバンプを介して接合されている。
本発明によれば、歩留まりの高い撮像装置を提供できる。
<第1実施形態>
以下、図面を参照して本発明の第1実施形態の撮像装置1を説明する。尚、図面は模式的なものであり、各部材の厚みと幅との関係、それぞれの部材の厚みの比率、接合電極の数、配列ピットなどは現実のものとは異なる。また、図面の相互間においても互いの寸法の関係や比率が異なる部分が含まれている。さらに、一部の構成、例えば、シリコン基板の表面の酸化シリコン層および配線等は図示を省略している、また、電子部品等の図示を省略する場合がある。
以下、図面を参照して本発明の第1実施形態の撮像装置1を説明する。尚、図面は模式的なものであり、各部材の厚みと幅との関係、それぞれの部材の厚みの比率、接合電極の数、配列ピットなどは現実のものとは異なる。また、図面の相互間においても互いの寸法の関係や比率が異なる部分が含まれている。さらに、一部の構成、例えば、シリコン基板の表面の酸化シリコン層および配線等は図示を省略している、また、電子部品等の図示を省略する場合がある。
図2から図4に示すように、撮像装置1は、シリコン基板からなる撮像素子10と、透明部材であるカバーガラス30と、配線板40と、信号ケーブル50と、を具備する。撮像素子10の受光面10SAは接着層20を介してカバーガラス30に覆われている。
撮像素子10は、すでに説明した従来の撮像装置101の撮像素子110と類似した構成である。すなわち、シリコンからなる撮像素子10は、受光部11が形成された受光面10SAと、受光面10SAと対向している対向面10SBと、受光面10SAに対して鋭角の第1の角度θ1で傾斜している傾斜面10SSと、を有する。受光面10SAには、受光部11と電気的に接続された複数の受光面電極12が列設されている。
撮像素子10には壁面が傾斜面10SSである貫通トレンチ10Tが形成されている。傾斜面10SSを有する貫通トレンチの形成には、異方性エッチングを好ましく用いることができる。異方性エッチングとしては、水酸化テトラメチルアンモニウム(TMAH)水溶液、水酸化カリウム(KOH)水溶液などを用いるウエットエッチング法が望ましいが、反応性イオンエッチング(RIE)、ケミカルドライエッチング(CDE)などのドライエッチング法も用いることができる。
たとえば、撮像素子10として受光面10SAが(100)面のシリコン基板を用いた場合には、(111)面のエッチング速度が(100)面に比べて遅い異方性エッチングとなるため、貫通トレンチ10Tの壁面は(111)面となり、受光面10SAである(100)面との角度θ1が54.74度の傾斜面となる。
撮像素子10のカバーガラス30、接着層20および受光面電極12は、貫通トレンチ10Tの傾斜面10SSの端辺の外側まで延設されている。製造時には、撮像素子10となるシリコンウエハの受光面に受光面電極12が配設され、受光面電極12上に接着層20を介してカバーガラス30となるガラスウエハが接着される。接着層20は、例えば、透明な紫外線硬化型樹脂からなる。なお、受光部11の上にマイクロレンズアレイを配設し、受光部11の周囲を接着層により接着してもよい。
ガラスウエハが接合されたシリコンウエハが、対向面10SB側からエッチングされて除去されている。このため、切り欠き10TTの底面、言い替えれば傾斜面10SSの端辺の外側には受光面電極12の裏面が露出している。
そして、撮像素子10は、対向面側に裏面が露出している受光面電極12と、電気的に接続された延設配線パターン13を有する。延設配線パターン13は、貫通トレンチ10Tの底面から傾斜面10SSを経由して対向面10SBまで配設されている。延設配線パターン13は、金、銅またはアルミニウム等の低電気抵抗材料からなる。そして、対向面10SBの延設配線パターン13の所定位置には第1の接合電極14が配設されている。第1の接合電極14は、延設配線パターン13と同じ材料から構成されていてもよいし、延設配線パターン13の上にニッケル層/金層等のバリア層が形成されていてもよい。第1の接合電極14には、バンプ15が配設されている。バンプ15は、例えば、フレームめっき法もしくはペースト印刷法により形成された半田バンプまたは金バンプ等である。
配線板40は、例えばポリイミドを絶縁層とする、複数の配線41を有するフレキシブル配線板である。そして、配線板40の第2の主面40SBには、それぞれが配線41と電気的に接続されている複数の第2の接合電極44が配設されている。第1の主面40SAにはチップコンデンサ等の電子部品(不図示)が実装されている。なお、第2の主面40SBにも電子部品が実装されていてもよい。
配線板40の第2の主面40SBの後端部側に列設されたケーブル接合電極42に、信号ケーブル50の導線51が接合されている。信号ケーブル50も撮像素子10の投影面内に収容されている。なお、複数のケーブル接合電極42は、配線板40の第2の主面40SBに配設されていてもよいし、第1の主面40SAおよび第2の主面40SBに配設されていてもよい。
複数の第1の接合電極14と複数の第2の接合電極44とは、それぞれが対向するように格子状に配置されている。そして、第1の接合電極14と第2の接合電極44とは、バンプ15を介して接合されている。格子状に配置されている複数のバンプ15を介して、撮像素子10と配線板40とは、対向面10SBと第2の主面40SBとが固定されている。さらに、第1の接合電極14と第2の接合電極44との接合部は、封止樹脂18により封止されている。
撮像装置1は、配線板40の第2の主面40SBの先端部と撮像素子10の対向面10SBとが、平行に配置された配線板40の第2の主面40SBと、撮像素子10の対向面10SBとが、複数のバンプ15により固定されている。このため、撮像装置1は製造時において取り扱う際に破損するおそれが小さく、製造が容易で、かつ、歩留まりが高いため安価である。
なお、撮像装置1では、撮像素子10は、受光面電極12が5本の5端子素子である。延設配線パターン13は5本ある。これに対して、ともに格子状に配置されている第1の接合電極14と第2の接合電極44とは、それぞれ9個ある。すなわち、4個の第1の接合電極14および4個の第2の接合電極44が、電気的には不要または意味の無い、いわゆるダミー電極として設けられている。
図2に示すように、1本の延設配線パターン13と接続されている第1の接合電極14Aのような5個の第1の接合電極14が通常の電極である。
これに対して、1本の延設配線パターン13と接続されていない第1の接合電極14Bのような4個の第1の接合電極14がダミー電極である。
撮像素子10は対向面10SBに受光面電極12と電気的に接続されていない4個のダミー電極14B等を有し、4個の第2の接合電極44B等とそれぞれ接合されている。さらに、延設配線パターン13と接続された5個の第1の接合電極14A等が5個の第2の接合電極44A等とそれぞれ電気的に接続されている。なお、ダミー電極は1本の延設配線パターン13に接続されていてもよいが、このようなダミー電極に接合する第2の接合電極44は信号ケーブル50等と電気的に接続されている必要はない。
第1の接合電極14のダミー電極は、配線板40と撮像素子10とを、より強固に固定するために配設されている。
特に、格子状に配置されている第1の接合電極14、第2の接合電極44(44C)を有する撮像装置1は、配線板40と撮像素子10とが、より強固に固定されているため、製造時において取り扱う際に破損することがないため、歩留まりが高い。
また、配線板40は、撮像素子10と接着されていない後端部は折り曲げられている。このため、配線板40は、撮像素子10の厚み方向から平面視すると、撮像素子10の内側の領域、すなわち撮像素子10の投影面内に、全体が配置されている。配線板40は、ガラスエポキシ樹脂等からなる非可撓性基板であってもよいが、長さが長い場合には、撮像素子10の投影面内に収容するためには、少なくとも折り曲げ領域だけは可撓性でなければならない。
撮像装置1は、配線板40および信号ケーブル50が撮像素子10の外形よりも外側にはみ出していないため、細径である。
なお、配線板40の長さが短い場合には、非可撓性配線板であっても撮像素子10の投影面内に収容できることは言うまでも無い。
また、配線板40は先端部が撮像素子10の対向面10SBの略全面と接着されていてもよいし、撮像素子10の投影面内に収容することができれば、折り曲げ角度は鈍角でもよい。さらに、配線板40は撮像素子10との接合端部が折り曲げられているだけでなく、後端部がさらに折り曲げられていてもよい。
<第2実施形態>
次に第2実施形態の変形例の撮像装置1Aについて説明する。撮像装置1Aは、撮像装置1と類似しているため、同じ機能の構成要素には同じ符号を付し説明は省略する。また、図5においては、配線板等の図示は省略する。
次に第2実施形態の変形例の撮像装置1Aについて説明する。撮像装置1Aは、撮像装置1と類似しているため、同じ機能の構成要素には同じ符号を付し説明は省略する。また、図5においては、配線板等の図示は省略する。
図5に示すように、撮像装置1Aの撮像素子10Aは、撮像素子10と異なり、受光面10SAに対して第1の角度θ1に傾斜している傾斜面10SSを壁面とするのは、貫通トレンチ(10T)ではなく、切り欠き10TTである。すなわち、接合ウエハを切断するときの切断線が貫通トレンチの底面にある場合には、切断により貫通トレンチは切り欠き10TTとなる。
また、撮像素子10Aでは、隣り合う2つの延設配線パターン13において、それらの長手方向において、第1の接合電極14が交互に配置されている。第1の接合電極14と対応している第2の接合電極も交互に配置されている。
そして、第1の接合電極14は、延設配線パターン13の幅が広くなっている延設配線パターン13の一部分である。すなわち、第1の接合電極14は延設配線パターン13と同一材料から構成されている。
撮像装置1Aは、撮像装置1の効果を有する。また、第1の接合電極14と図示しない配線板の第2の接合電極とを接合するときに、隣り合う延設配線パターン13が短絡するおそれがなく、撮像装置1Aは、撮像装置1よりも、歩留まりが高い。
<第3実施形態>
次に第3実施形態の変形例の撮像装置1Bについて説明する。撮像装置1Bは、撮像装置1、1Aと類似しているため、同じ機能の構成要素には同じ符号を付し説明は省略する。
次に第3実施形態の変形例の撮像装置1Bについて説明する。撮像装置1Bは、撮像装置1、1Aと類似しているため、同じ機能の構成要素には同じ符号を付し説明は省略する。
図6に示すように撮像装置1Bでは、撮像素子10Bの延設配線パターン13の端部が第1の接合電極14を構成している。また、撮像装置1Bには、第1の接合電極14に加えて、ダミー電極である第1の接合電極14Cが配設されている。そして、配線板40Bの複数の第2の接合電極44のうち、第1の接合電極14Cと対向している第2の電接合極44Cが、第1の接合電極14Cと接合されている。
撮像装置1Bは、延設配線パターン13と接合されている第1の接合電極14に加えて、ダミー電極である第1の接合電極14Cを有する。また、第1の接合電極14、14Cおよび第2の接合電極44(44C)は格子状に配置されている。さらに、隣り合う2つの延設配線パターン13において、それらの長手方向において、第1の接合電極14が交互に配置されている。
撮像装置1Bは、配線板40Bと撮像素子10Bとが強固に固定されているため、製造時において取り扱う際に破損することがないため、歩留まりが高い。
本発明は上述した実施形態、または変形例等に限定されるものではなく、本発明の要旨を変えない範囲において、種々の変更、改変、組み合わせ等ができる。
1、1A、1B…撮像装置
10…撮像素子
10SA…受光面
10SB…対向面
10SS…傾斜面
10T…貫通トレンチ
11…受光部
12…受光面電極
13…延設配線パターン
14…第1の接合電極
15…バンプ
15…接合電極
18…封止樹脂
20…接着層
30…カバーガラス
40…配線板
40SA…第1の主面
42…ケーブル接合電極
44…第2の接合電極
50…信号ケーブル
10…撮像素子
10SA…受光面
10SB…対向面
10SS…傾斜面
10T…貫通トレンチ
11…受光部
12…受光面電極
13…延設配線パターン
14…第1の接合電極
15…バンプ
15…接合電極
18…封止樹脂
20…接着層
30…カバーガラス
40…配線板
40SA…第1の主面
42…ケーブル接合電極
44…第2の接合電極
50…信号ケーブル
Claims (7)
- 受光部が形成されている受光面と、前記受光面と対向している対向面と、前記受光面に対して鋭角の第1の角度で傾斜している傾斜面と、を有し、前記受光面に前記受光部と電気的に接続された複数の受光面電極が形成されている、撮像素子と、
前記受光面を覆うように接着されている透明部材と、
主面に複数の第2の接合電極を有する配線板と、を具備し、
前記透明部材および前記複数の受光面電極が前記傾斜面の端辺の外側まで延設されており、前記複数の受光面電極の裏面が前記対向面側に露出している撮像装置であって、
前記撮像素子が、前記複数の受光面電極のそれぞれの裏面上から前記傾斜面を介して、前記対向面まで延設されており、それぞれが前記対向面に第1の接合電極を有する複数の延設配線パターンを有し、
前記配線板の前記主面と前記撮像素子の前記対向面とが平行に配置され、前記第1の接合電極と前記第2の接合電極がバンプを介して接合されていることを特徴とする撮像装置。 - 前記バンプが、半田バンプであることを特徴とする請求項1に記載の撮像装置。
- 前記撮像素子が、前記対向面に前記受光面電極と電気的に接続されていないダミー電極を有し、
前記複数の第2の接合電極のいずれかが、前記ダミー電極と接合されていることを特徴とする請求項2に記載の撮像装置。 - 前記複数の第1の接合電極のいずれかが、前記延設配線パターンを介して他の第1の接合電極と電気的に接続されていることを特徴とする請求項2または請求項3に記載の撮像装置。
- 前記複数の第2の接合電極が、格子状に配置されていることを特徴とする請求項1から請求項4のいずれか1項に記載の撮像装置。
- 隣り合う2つの前記延設配線パターンにおいて、それらの長手方向において、第1の接合電極が交互に配置されていることを特徴とする請求項1から請求項4のいずれか1項に記載の撮像装置。
- 前記配線板が、可撓性配線板であり、
前記複数の第2の接合電極が配設されている領域よりも後端部が折れ曲がっていることを特徴とする請求項1から請求項6のいずれか1項に記載の撮像装置。
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JPH0956671A (ja) * | 1995-08-24 | 1997-03-04 | Olympus Optical Co Ltd | 撮像装置 |
JP2013123628A (ja) * | 2011-12-16 | 2013-06-24 | Olympus Medical Systems Corp | 内視鏡用撮像ユニット |
JP2014075764A (ja) * | 2012-10-05 | 2014-04-24 | Olympus Corp | 撮像装置、該撮像装置を具備する内視鏡 |
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JPH0956671A (ja) * | 1995-08-24 | 1997-03-04 | Olympus Optical Co Ltd | 撮像装置 |
JP2013123628A (ja) * | 2011-12-16 | 2013-06-24 | Olympus Medical Systems Corp | 内視鏡用撮像ユニット |
JP2014075764A (ja) * | 2012-10-05 | 2014-04-24 | Olympus Corp | 撮像装置、該撮像装置を具備する内視鏡 |
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