JP6542875B2 - 撮像装置 - Google Patents
撮像装置 Download PDFInfo
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- JP6542875B2 JP6542875B2 JP2017512171A JP2017512171A JP6542875B2 JP 6542875 B2 JP6542875 B2 JP 6542875B2 JP 2017512171 A JP2017512171 A JP 2017512171A JP 2017512171 A JP2017512171 A JP 2017512171A JP 6542875 B2 JP6542875 B2 JP 6542875B2
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- light receiving
- imaging device
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- 238000003384 imaging method Methods 0.000 title claims description 100
- 230000001154 acute effect Effects 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 2
- 239000012790 adhesive layer Substances 0.000 description 8
- 239000006059 cover glass Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229930091051 Arenine Natural products 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
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- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
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- H01L2224/02371—Disposition of the redistribution layers connecting the bonding area on a surface of the semiconductor or solid-state body with another surface of the semiconductor or solid-state body
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Description
以下、図面を参照して本発明の第1実施形態の撮像装置1を説明する。尚、図面は模式的なものであり、各部材の厚みと幅との関係、それぞれの部材の厚みの比率、接合電極の数、配列ピットなどは現実のものとは異なる。また、図面の相互間においても互いの寸法の関係や比率が異なる部分が含まれている。さらに、一部の構成、例えば、シリコン基板の表面の酸化シリコン層および配線等は図示を省略している、また、電子部品等の図示を省略する場合がある。
次に第2実施形態の変形例の撮像装置1Aについて説明する。撮像装置1Aは、撮像装置1と類似しているため、同じ機能の構成要素には同じ符号を付し説明は省略する。また、図5においては、配線板等の図示は省略する。
次に第3実施形態の変形例の撮像装置1Bについて説明する。撮像装置1Bは、撮像装置1、1Aと類似しているため、同じ機能の構成要素には同じ符号を付し説明は省略する。
10…撮像素子
10SA…受光面
10SB…対向面
10SS…傾斜面
10T…貫通トレンチ
11…受光部
12…受光面電極
13…延設配線パターン
14…第1の接合電極
15…バンプ
15…接合電極
18…封止樹脂
20…接着層
30…カバーガラス
40…配線板
40SA…第1の主面
42…ケーブル接合電極
44…第2の接合電極
50…信号ケーブル
Claims (7)
- 受光部が形成されている受光面と、前記受光面と対向している対向面と、前記受光面に対して鋭角の第1の角度で傾斜している傾斜面と、を有し、前記受光面に前記受光部と電気的に接続された複数の受光面電極が形成されている、撮像素子と、
前記受光面を覆うように接着されている透明部材と、
主面に複数の第2の接合電極を有する配線板と、を具備し、
前記透明部材および前記複数の受光面電極が前記傾斜面の端辺の外側まで延設されており、前記複数の受光面電極の裏面が前記対向面側に露出している撮像装置であって、
前記撮像素子が、前記複数の受光面電極のそれぞれの裏面上から前記傾斜面を介して、前記対向面まで延設されており、それぞれが前記対向面に第1の接合電極を有する複数の延設配線パターンを有し、
前記配線板の前記主面と前記撮像素子の前記対向面とが平行に配置され、前記第1の接合電極と前記第2の接合電極がバンプを介して接合されていることを特徴とする撮像装置。 - 前記バンプが、半田バンプであることを特徴とする請求項1に記載の撮像装置。
- 前記撮像素子が、前記対向面に前記受光面電極と電気的に接続されていないダミー電極を有し、
前記複数の第2の接合電極のいずれかが、前記ダミー電極と接合されていることを特徴とする請求項2に記載の撮像装置。 - 前記複数の第1の接合電極のいずれかが、前記延設配線パターンを介して他の第1の接合電極と電気的に接続されていることを特徴とする請求項2または請求項3に記載の撮像装置。
- 前記複数の第2の接合電極が、格子状に配置されていることを特徴とする請求項1から請求項4のいずれか1項に記載の撮像装置。
- 隣り合う2つの前記延設配線パターンにおいて、それらの長手方向において、第1の接合電極が交互に配置されていることを特徴とする請求項1から請求項4のいずれか1項に記載の撮像装置。
- 前記配線板が、可撓性配線板であり、
前記複数の第2の接合電極が配設されている領域よりも後端部が折れ曲がっていることを特徴とする請求項1から請求項6のいずれか1項に記載の撮像装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2015/061865 WO2016166889A1 (ja) | 2015-04-17 | 2015-04-17 | 撮像装置 |
Publications (2)
Publication Number | Publication Date |
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JPWO2016166889A1 JPWO2016166889A1 (ja) | 2018-02-08 |
JP6542875B2 true JP6542875B2 (ja) | 2019-07-10 |
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Application Number | Title | Priority Date | Filing Date |
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JP2017512171A Active JP6542875B2 (ja) | 2015-04-17 | 2015-04-17 | 撮像装置 |
Country Status (4)
Country | Link |
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US (1) | US10249676B2 (ja) |
JP (1) | JP6542875B2 (ja) |
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WO2016166889A1 (ja) | 2016-10-20 |
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