WO2016155475A1 - 有机发光二极管器件及显示面板、显示装置 - Google Patents

有机发光二极管器件及显示面板、显示装置 Download PDF

Info

Publication number
WO2016155475A1
WO2016155475A1 PCT/CN2016/075916 CN2016075916W WO2016155475A1 WO 2016155475 A1 WO2016155475 A1 WO 2016155475A1 CN 2016075916 W CN2016075916 W CN 2016075916W WO 2016155475 A1 WO2016155475 A1 WO 2016155475A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
doped
layers
charge generating
charge generation
Prior art date
Application number
PCT/CN2016/075916
Other languages
English (en)
French (fr)
Inventor
毕文涛
李娜
梁逸南
Original Assignee
京东方科技集团股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US15/321,548 priority Critical patent/US10424754B2/en
Publication of WO2016155475A1 publication Critical patent/WO2016155475A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/865—Intermediate layers comprising a mixture of materials of the adjoining active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/19—Tandem OLEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/80—Composition varying spatially, e.g. having a spatial gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/311—Phthalocyanine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
    • H10K85/342—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising iridium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/623—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing five rings, e.g. pentacene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/654—Aromatic compounds comprising a hetero atom comprising only nitrogen as heteroatom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an organic light emitting diode device, a display panel, and a display device.
  • OLED Organic Light-Emitting Diode
  • the tandem OLED which has been widely studied, comprises a plurality of light-emitting units, and a plurality of light-emitting units are connected by a charge generating layer, the light-emitting layers of which do not affect each other, and the current density in the device is low, which can effectively avoid excessive current action.
  • the resulting heat quenching effect further improves the current efficiency, brightness, and lifetime of the OLED.
  • the respective illuminating units of the tandem OLED can simultaneously generate three primary colors of red, green and blue; therefore, the application of the series structure in the preparation of high performance white organic electroluminescent devices is also of great interest.
  • most of them will be compensated by adding transistors, especially for top-emitting OLED devices.
  • the current top-emitting tandem OLED has too many layers, resulting in a high device driving voltage and a process of injecting carriers from the charge generating layer into the light-emitting layer, and it is also necessary to overcome the electrode and the injection layer and the injection layer.
  • the transmission layer and the energy level difference between the transmission layer and the light-emitting layer can reach the light-emitting layer. Therefore, if a tandem OLED structure is to be applied to a top emitting device, it is necessary to solve the problem of high driving voltage due to high energy difference.
  • carriers do not easily enter the light-emitting layer, and thus accumulate on the interface barrier, resulting in an increase in the driving voltage of the light-emitting device and a decrease in efficiency.
  • the embodiments of the present invention provide an organic electroluminescent device, a display panel, and a display device, which are used to solve the problem that the barrier voltage caused by the number of layers of the tandem OLED is too high, and the device driving voltage is biased. High problem.
  • An organic light emitting diode device comprising:
  • the functional layer comprises: a hole injection layer, a hole transport layer, a plurality of light-emitting layers, an electron transport layer, and an electron injection layer disposed in order from the anode side, wherein each of the two directly adjacent light-emitting layers Between the charge generation layer a and the charge generation layer b;
  • the functional layer comprises, in order from the anode side to the cathode side, in order:
  • the functional layer comprises, in order from the anode side to the cathode side, in order:
  • a hole injection layer a hole transport layer, an anode side light emitting layer, a first charge generating layer a, a first charge generating layer b, an intermediate light emitting layer, a second charge generating layer a, a second charge generating layer b, and a cathode side emitting light Layer, electron transport layer, electron injection layer.
  • all of the film layers in the functional layer are doped film layers.
  • the charge generation layer a and the charge generation layer b in the functional layer are each a single substance gradient doped type film layer, wherein the doping concentration of any of the charge generation layer a or the charge generation layer b is directly adjacent to the direction The direction of the luminescent layer is sequentially lowered.
  • the host material of the charge generation layer a and the charge generation layer b in the functional layer is the same organic material, and the doping object material of the same group of charge generation layer a and charge generation layer b
  • the doped guest material is a metal material or a metal compound material or an organic material.
  • any one of the functional layers is doped with a metal having a doping concentration of 5% to 0% in a direction directed to the immediately adjacent luminescent layer, wherein the metal includes at least the following One or a combination: lithium, potassium, rubidium, cesium, magnesium, calcium, sodium;
  • any of the charge generating layers b is doped with a first metal compound having a doping concentration of 30% to 0% in a direction directed to the immediately adjacent light emitting layer, wherein the first metal compound includes at least one or a combination of the following : molybdenum trioxide, vanadium pentoxide, tungsten trioxide, ferric chloride, triiron tetroxide.
  • any one of the functional layers is doped with a second metal compound having a doping concentration of 15%-0% in a direction directed to the immediately adjacent luminescent layer, wherein the second The metal compound includes at least one or a combination of: cesium carbonate, lithium fluoride, lithium carbonate, sodium chloride, iron chloride, triiron tetroxide;
  • Any of the charge generating layers b is doped with a first metal compound having a doping concentration of 30% to 0% in the direction directed to the immediately adjacent light emitting layer.
  • any one of the functional layers is doped with a first organic substance having a doping concentration of 50%-0% in a direction directed to the immediately adjacent luminescent layer, wherein the first organic substance At least one or a combination of the following: fullerenes, anthracene derivatives;
  • any of the charge generating layers b is doped with a second organic substance having a doping concentration of 50% to 0% in a direction directed to the immediately adjacent luminescent layer, wherein the second organic substance comprises at least one or a combination of the following: Pentabenzene, tetrafluorotetracyanoquinodimethane, anthracene derivatives.
  • Embodiments of the present invention also provide a display panel including the organic light emitting diode device as described above.
  • Embodiments of the present invention also provide a display device including the display panel as described above.
  • an existing tandem top-emitting OLED device is modified to utilize a homojunction structure and an improved functional layer of a top-emitting OLED device connected in series.
  • the functional layer includes: a hole injection layer, a hole transport layer, a plurality of light emitting layers, an electron transport layer, and an electron injection layer disposed in order from the anode side, wherein between each two directly adjacent light emitting layers A charge generation layer a and a charge generation layer b are provided.
  • a homojunction structure is adopted, which reduces the use of organic materials, reduces the injection barrier of carriers in the device, and improves the load. The injection of the flux and the efficiency of the device reduce the driving voltage of the device.
  • FIG. 1 is a schematic structural diagram of an organic light emitting diode device according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural diagram of an OLED device including two light emitting units according to an embodiment of the present invention
  • FIG. 3 is a schematic structural diagram of an OLED device including three light emitting units according to an embodiment of the present invention.
  • FIGS. 4(a) to 4(b) are schematic structural views of two series-connected OLED devices in which a charge generating layer doped guest material containing a homojunction structure comprises a metal according to an embodiment of the present invention
  • FIG. 5(a)-5(b) are schematic structural views of two tandem OLED devices in which a charge generating layer doped guest material of a homojunction structure is provided with a metal compound according to an embodiment of the present invention
  • 6(a)-6(b) are schematic structural views of two tandem OLED devices in which a charge generating layer doped guest material of the homojunction structure is provided with an organic material according to an embodiment of the present invention.
  • FIG. 1 is a schematic structural diagram of an organic light emitting diode device according to an embodiment of the present invention. As shown in the figure, the organic light emitting diode device is of a top emission type, and specifically includes:
  • the functional layer 12 includes a hole injection layer 1201, a hole transport layer 1202, a plurality of light emitting layers 1203 and 1206, an electron transport layer 1205, and an electron injection layer 1204 disposed in order from the anode side.
  • a charge generating layer a 1207 and a charge generating layer b 1208 are disposed between two directly adjacent light emitting layers 1203, 1206;
  • the other film layers adopt a homojunction structure, wherein the homojunction structure includes adjacent materials of the same material layer, and thus, to a certain extent
  • the injection barrier of the carrier is reduced, and the injection efficiency of the carrier is improved.
  • the series structure of the present invention is different from the prior art in that a plurality of OLEDs are directly connected in series, but only the organic near the anode is retained.
  • the electron injection layer, the electron transport layer, and the cathode side light emitting layer of the injection layer, the hole transport layer, the anode side light emitting layer, and the organic light emitting diode near the cathode are connected by at least one set of the charge generating layer a and the charge generating layer b,
  • An electron injection layer, an electron transport layer, a cathode side light emitting layer of an organic light emitting diode close to the anode, and a hole injection layer, a hole transport layer, an anode side light emitting layer of the organic light emitting diode near the cathode, and a tandem OLED device The functional layer of each organic light emitting diode in the middle position.
  • the plurality of OLEDs are connected together by the plurality of sets of the charge generating layer a and the charge generating layer b, and while ensuring the current efficiency, brightness, and lifetime of the OLED device, the film thickness of the tandem OLED device can be reduced.
  • the drive voltage of the device increases the efficiency of the tandem OLED device.
  • an existing tandem top-emitting OLED device is modified to utilize a homojunction structure and an improved functional layer of a top-emitting OLED device connected in series.
  • the functional layer includes: a hole injection layer, a hole transport layer, a plurality of light emitting layers, an electron transport layer, and an electron injection layer disposed in order from the anode side, wherein between each two directly adjacent light emitting layers A charge generation layer a and a charge generation layer b are provided.
  • a homojunction structure is adopted, which reduces the use of organic materials, reduces the injection barrier of carriers in the device, and improves the load. The injection of the flux and the efficiency of the device reduce the driving voltage of the device.
  • an OLED device including two light emitting units includes:
  • the tandem OLED device shown in FIG. 2 on the one hand, since all the junctions of the device adopt a homojunction structure, that is, the main materials of all the film layers are the same material, and the materials are doped by doping different materials.
  • the OLED on the side close to the anode removes the functional layer on the cathode side (eg, the electron transport layer, The electron injection layer), the one side of the OLED close to the cathode, removes the functional layer on the anode side (for example, a hole transport layer, a hole injection layer).
  • the film thickness of the tandem OLED device is directly reduced, which also reduces the injection barrier of the carrier to some extent, thereby reducing the series The driving voltage of the OLED device.
  • an OLED device including three light emitting units is provided in an embodiment of the present invention.
  • FIG. 3 is only an example, and the solution involved in the present invention is not limited to an OLED including three light emitting units.
  • the device may further include an OLED device of three or more light emitting units.
  • the OLED device includes:
  • the anode 31, the functional layer 32, and the cathode 33, the functional layer 32 includes, in order from the anode 31 side to the cathode 33 side, in order:
  • Hole injection layer 3201, hole transport layer 3202, anode side light-emitting layer 3203, first charge generation layer a 3204, first charge generation layer b 3205, intermediate light-emitting layer 3206, second charge generation layer a 3207, second charge A layer b 3208, a cathode side light-emitting layer 3209, an electron transport layer 3210, and an electron injection layer 3211 are produced.
  • the two OLED light emitting units are connected in series, but the three OLED light emitting units are connected in series.
  • the three OLED light-emitting units can be well connected in series and capable of realizing carrier migration, only the light-emitting layer of the OLED light-emitting unit is retained, that is, as shown in FIG.
  • the intermediate light-emitting layer 3206 is connected to the first OLED light-emitting unit near the anode side by the first charge generation layer a 3204 on the left side and the first charge generation layer b 3205.
  • the set of charge generation layers passing through the second charge generation layer a 3207 and the second charge generation layer b 3208 on the right side are connected to the second OLED light emitting unit near the cathode side.
  • the connection structure realizes effective series connection of a plurality of OLED light-emitting units, and at the same time, reduces the film thickness of the series OLED device, weakens the injection barrier of the carrier to some extent, and further reduces the serial OLED.
  • the drive voltage of the device increases the efficiency of the tandem OLED device.
  • the functional layer in addition to the film layers other than the hole transport layer and the electron transport layer, the functional layer must be a doped film layer, a hole transport layer and The electron transport layer may or may not be doped.
  • the main body material of each film layer is the same, the doping guest material, and the doping concentration are selected according to the function of the film layer, The fine doping method is described in the following.
  • the charge generation layer a and the charge generation layer b in the functional layer are each a single substance gradient doped type film layer, wherein the doping concentration of any of the charge generation layer a or the charge generation layer b is directly adjacent to the direction The direction of the luminescent layer is sequentially lowered.
  • the host material of the charge generating layer a and the charge generating layer b in the functional layer is the same organic material, and the doping guest materials of the same group of the charge generating layer a and the charge generating layer b are different, and the doping is performed.
  • the guest material is a metal material or a metal compound material or an organic material.
  • the main body material of each film layer of the tandem OLED device is the same, and in order to satisfy the carrier injection barrier as low as possible,
  • a material with similar hole mobility and electron mobility for example: CBP (4,4'-bis(9-carbazolyl)-biphenyl), Chinese name 4,4'-bis(9H-carbazole-9-yl) Biphenyl, which has a hole mobility and an electron mobility of 2*10 -3 cm 2 /V*s and 3*10 -4 cm 2 /V*s under an electric field of 0.5 MV/cm, respectively
  • CBP can be used both as a hole transport layer material and as an electron transport layer
  • Chinese name 4,6 - bis[3-(carbazol-9-yl)phenyl]pyrimidine which has a hole
  • 46DCzPPm is exemplified as an exemplary host material of the tandem OLED device of the present invention, and the doping guest material of any of the charge generating layer a and the charge generating layer b is described as an example.
  • the charge generating layer of the homojunction structure is doped with a guest material containing a metal
  • any one of the functional layers is doped with a metal having a doping concentration of 5% to 0% in a direction directed to the immediately adjacent luminescent layer, wherein
  • the metal includes at least one or a combination of lithium Li, potassium K, strontium Rb, strontium Cs, magnesium Mg, calcium Ca, sodium Na;
  • any of the charge generating layers b is doped with a first metal compound having a doping concentration of 30% to 0% in a direction directed to the immediately adjacent light emitting layer, wherein the first metal compound includes at least one or a combination of the following : molybdenum trioxide MoO 3 , vanadium pentoxide V 2 O 5 , tungsten trioxide WO 3 , ferric chloride FeCl 3 , ferric oxide Fe 3 O 4 .
  • the anode involved is a ITO/Ag/ITO glass substrate, and Ag in the film acts as a reflection to reflect light emitted from the luminescent layer from the top. Go out.
  • the cathode involved is a single metal or a mixture of metals.
  • a preferred embodiment, in the tandem OLED device of the present invention is a schematic structural view of a tandem OLED device comprising two light emitting units, as shown in FIG. 4(a), from the anode to the anode
  • the cathodes in turn include:
  • An anode 41 which is a glass substrate of ITO/Ag/ITO; a functional layer 42; and a cathode 43, which is a single metal or metal mixture such as magnesium Mg or silver Ag.
  • the functional layer 42 specifically includes a hole injection layer 4201, a hole transport layer 4202, an anode side light emitting layer 4203, a charge generation layer a 4204, a charge generation layer b 4205, a cathode side light emitting layer 4206, an electron transport layer 4207, and electron injection. Layer 4208.
  • the host material of the hole injection layer 4201 is 46DCzPPm
  • the doped guest material is molybdenum trioxide MoO 3
  • the host material of the hole transport layer 4202 is 46DCzPPm, which may be doped without the doping of the guest material
  • the material of the side luminescent layer 4203 is 46DCzPPm.
  • the structure film layer may be doped with or without doping.
  • the doped guest material is selected according to the requirements of the illuminating color.
  • the color types that can be selected include: red, green, blue. Color, white, or a combination of two tones or a combination of three tones, for example, assuming that the current anode side luminescent layer 4203 is blue light, the doping guest material is: FIRpic (iridium bis (4,6-di-fluorophenyl) )-pyridinato-N, C2-picolinate); the charge generating layer a 4204 has a host material of 46DCzPPm, and the doped guest material is lithium Li, and its doping concentration is 5%-0% in the direction of the direct adjacent light-emitting layer.
  • the charge generating layer b 4205 has a host material of 46DCzPPm, and the doped guest material is molybdenum trioxide MoO 3 , and its doping concentration is 30%-0% in the direction directed to the immediately adjacent light emitting layer;
  • the host material of the side light-emitting layer 4206 is 46DCzPPm, and the structure film layer may be doped with a guest material or may be undoped, and the doped guest material may be the same as the doped guest material of the anode-side light-emitting layer 4203; the electron transport layer 4207
  • the host material is 46DCzPPm, there is no dopant guest material;
  • the host material of the electron injection layer 4208 is 46DCzPPm, and the doped guest material is cesium carbonate Cs 2 O 3 .
  • a first layer of ITO, a 100 nm thick Ag, and a second layer of ITO having a thickness of 8 nm are sequentially formed on a glass substrate to obtain an ITO glass substrate; the top emitting ITO glass substrate (the surface thereof) The resistance is ⁇ 30 ⁇ , which is sequentially washed in an ultrasonic environment of deionized water, acetone, and absolute ethanol, then dried by N 2 , and subjected to plasma O 2 treatment; the treated substrate is placed in a vapor deposition chamber, After the vacuum degree is lower than 5 ⁇ 10 ⁇ 4 Pa, a 10 nm thick hole injection layer 46DCzPPm:MoO 3 is deposited on the ITO surface by vacuum thermal evaporation (46DCzPPm: MoO 3 indicates MoO 3 doping in 46DCzPPm) , the following are similar), a 90 nm thick hole transport layer 46DCzPPm, a 20 nm thick anode side light emitting layer 46DCzPPm
  • the remaining layers each used an open mask and the evaporation rate was 0.1 nm/s. From the perspective of the manufacturing process, due to the use of the homojunction structure, the use of materials is reduced during the evaporation process, and the process process is simplified.
  • tandem OLED device comprising three light emitting units as shown in FIG. 4(b).
  • the tandem OLED device comprises, in order from the anode to the cathode, in order:
  • the anode 41' is a glass substrate of ITO/Ag/ITO; a functional layer 42'; and a cathode 43' which is a single metal or a mixture of metals such as magnesium Mg or silver Ag.
  • the functional layer 42' specifically includes a hole injection layer 4201', a hole transport layer 4202', an anode side light emitting layer 4203', a first charge generation layer a 4204', a first charge generation layer b4205', and an intermediate light emitting layer 4206. ', a second charge generation layer a 4207', a second charge generation layer b 4208', a cathode side light-emitting layer 4209', an electron transport layer 4210', and an electron injection layer 4211'.
  • the host material of the hole injection layer 4201' is 46DCzPPm
  • the doped guest material is molybdenum trioxide MoO 3
  • the host material of the hole transport layer 4202' is 46DCzPPm, which may be doped without the doping of the guest material.
  • the host material of the anode side light-emitting layer 4203' is 46DCzPPm, and the doped guest material is selected according to the requirement of the light-emitting color, similar to the anode-side light-emitting layer 4203';
  • the host material of the first charge-generating layer a 4204' is 46DCzPPm, doped
  • the guest material is lithium Li, the doping concentration is 5%-0% in the direction pointing to the directly adjacent luminescent layer;
  • the host material of the first charge generating layer b 4205' is 46DCzPPm, and the doping guest material is molybdenum trioxide MoO 3 , the doping concentration is 30%-0% in the direction of the direct adjacent luminescent layer;
  • the host material 46DCzPPm of the intermediate luminescent layer 4206' the doping guest material is selected according to the requirement of the luminescent color, and the second charge generating layer
  • the host material of a 4207' is 46DCzPPm, and the doped guest
  • the selected doped guest material is disposed, but must follow the principle that the doping concentration decreases in the direction directed to the immediately adjacent luminescent layer;
  • the second charge generating layer b 4208' has a host material of 46 DCzPPm and the doped guest material is three Molybdenum oxide MoO 3 , the choice of doping guest material is also flexible, but must be different from the doping guest material of the second charge generating layer a 4207', the doping guest between adjacent groups can be the same, doping The concentration decreases in a direction directed to the immediately adjacent luminescent layer;
  • the host material of the cathode side luminescent layer 4209' is 46DCzPPm, and the doped guest material may be the same as the doping guest material of the anode side luminescent layer 4203';
  • the electron transport layer 4210 The host material is 46DCzPPm, there is no dopant guest material;
  • the host material of the electron injection layer 4211' is 46DCzPPm, and the doped guest material may
  • the fabrication process of the tandem OLED device including three or more light-emitting units according to the present invention is similar to the fabrication process of the above-described tandem OLED device including two light-emitting units, and details are not described herein.
  • a homojunction having a pn junction characteristic is formed between the charge generation layer a 4204 and the charge generation layer b 4205, and the doping concentrations of the two charge generation layers are all along away from the homojunction. The direction is reduced.
  • the charge generating layer of the homojunction structure is doped with a guest material containing a metal compound
  • any one of the functional layers is doped with a second metal compound having a doping concentration of 15%-0 in the direction of the direct adjacent luminescent layer.
  • the second metal compound comprises at least one or a combination of: cesium carbonate Cs 2 O 3 , lithium fluoride LiF, lithium carbonate Li 2 CO 3 , sodium chloride NaCl, ferric chloride FeCl 3 , tetraoxide Triiron Fe 3 O 4 ;
  • Any of the charge generating layers b is doped with a first metal compound having a doping concentration of 30% to 0% in the direction directed to the immediately adjacent light emitting layer.
  • tandem OLED device is similar in structure to the tandem OLED device of FIG. 4(a), which includes the anode to the cathode in sequence. :
  • An anode 51 which is a glass substrate of ITO/Ag/ITO; a functional layer 52; and a cathode 53, which is a single metal or a mixture of metals, such as magnesium Mg or silver Ag.
  • the functional layer 52 specifically includes a hole injection layer 5201, a hole transport layer 5202, an anode side light emitting layer 5203, a charge generation layer a 5204, a charge generation layer b 5205, a cathode side light emitting layer 5206, an electron transport layer 5207, and electron injection. Layer 5208.
  • the only difference is that the doping guest material of the charge generating layer a 5204 in the functional layer of the tandem OLED device shown in FIG. 5(a) is replaced by a metal compound of cerium carbonate Cs 2 O 3 with a doping concentration.
  • the direction of the direct adjacent luminescent layer is 15%-0%; the charge generating layer b 5205 is still doped with molybdenum trioxide MoO 3 , and the doping concentration is 30%-0 in the direction of the direct adjacent luminescent layer. %.
  • the tandem OLED device is similar in structure to the tandem OLED device in FIG. 4(b), and the tandem OLED device is sequentially from anode to cathode.
  • the tandem OLED device is sequentially from anode to cathode.
  • the anode 51' is a glass substrate of ITO/Ag/ITO; a functional layer 52'; and a cathode 53' which is a single metal or metal mixture such as magnesium Mg or silver Ag.
  • the functional layer 52' specifically includes a hole injection layer 5201', a hole transport layer 5202', an anode side light emitting layer 5203', a first charge generation layer a 5204', a first charge generation layer b5205', and an intermediate light emitting layer 5206. ', a second charge generation layer a 5207', a second charge generation layer b 5208', a cathode side light-emitting layer 5209', an electron transport layer 5210', and an electron injection layer 5211'.
  • the only difference is that the doped guest material of the first charge generation layer a 5204' and/or the second charge generation layer a 5207' in the functional layer of the tandem OLED device shown in FIG. 5(b) is replaced by metal.
  • the charge generating layer is doped with a metal compound, which has higher stability and is less likely to be eroded than the metal element. Therefore, the prepared tandem OLED device not only has the implementation of the present invention. Other effects involved in the example scheme, at the same time, the lifetime of the tandem OLED device is higher.
  • the charge generating layer of the homojunction structure is doped with a guest material containing organic matter
  • any one of the functional layers is doped with a first organic substance, and the doping concentration thereof is 50%-0% in the direction of the direct adjacent light emitting layer.
  • the first organic substance comprises at least one or a combination of: fullerene C60, an anthracene derivative;
  • any of the charge generating layers b is doped with a second organic substance having a doping concentration of 50% to 0% in a direction directed to the immediately adjacent luminescent layer, wherein the second organic substance comprises at least one or a combination of the following: Pentaphenyl Pentacene, tetrafluorotetracyanoquinodimethane F4-TCNQ, ⁇ Derivatives.
  • tandem OLED device is similar in structure to the tandem OLED device of FIG. 4(a), which includes the anode to the cathode in sequence. :
  • the anode 61 is a glass substrate of ITO/Ag/ITO; a functional layer 62; and a cathode 63 which is a single metal or a mixture of metals such as magnesium Mg or silver Ag.
  • the functional layer 62 specifically includes a hole injection layer 6201, a hole transport layer 6202, an anode side light emitting layer 6203, a charge generation layer a 6204, a charge generation layer b 6205, a cathode side light emitting layer 6206, an electron transport layer 6207, and electron injection. Layer 6208. The only difference is that a charge (a), in the tandem OLED device functional layer is doped in FIG.
  • the tandem OLED device is similar in structure to the tandem OLED device in FIG. 4(b), and the tandem OLED device is sequentially from anode to cathode.
  • the tandem OLED device is sequentially from anode to cathode.
  • the anode 61' is a glass substrate of ITO/Ag/ITO; a functional layer 62'; and a cathode 63' which is a single metal or a mixture of metals such as magnesium Mg or silver Ag.
  • the functional layer 62' specifically includes a hole injection layer 6201', a hole transport layer 6202', an anode side light emitting layer 6203', a first charge generation layer a 6204', a first charge generation layer b6205', and an intermediate light emitting layer 6206. ', a second charge generation layer a 6207', a second charge generation layer b 6208', a cathode side light-emitting layer 6209', an electron transport layer 6210', and an electron injection layer 6211'.
  • the only difference is that the doped guest material of the first charge generation layer a 6204' and/or the second charge generation layer a 6207' in the functional layer of the tandem OLED device shown in FIG. 5(b) is replaced by metal.
  • the doping concentration is 15%-0% in the direction directed to the immediately adjacent luminescent layer;
  • the first charge generating layer b 6205' and the second charge generating layer b 6208' are doped Pentacene Pentacene, the chemical formula is C 22 H 14 , and its doping concentration is 30%-0% in the direction of the direct adjacent luminescent layer.
  • the charge generating layer a and the charge generating layer included between the groups b may be all the same, may be partially the same, or completely different.
  • the charge generating layer is doped with an organic material, and the stability is higher than that of the metal and the metal compound, and is not easily eroded. Therefore, the prepared tandem OLED device not only has the present invention. Other effects involved in the embodiments of the invention, at the same time, the lifetime of the tandem OLED device is high.
  • the embodiment of the invention further provides a display panel, which comprises any of the series OLED devices provided by the above embodiments.
  • the display panel can be used for preparing display devices such as mobile phones, tablet computers, and televisions.
  • the embodiment of the present invention further provides a display device including the above display panel; in addition, other necessary existing structures, such as a power supply unit, a closed substrate, a package module, and the like.
  • the display device can be a mobile phone, a tablet computer, a television, or the like.

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种有机发光二极管器件及显示面板、显示装置。对现有的串联式顶发射OLED器件进行了改进，利用了同质结结构以及对串联在一起的顶发射OLED器件的功能层进行了改进。功能层（12）包括：从靠近阳极（11）一侧依次设置的空穴注入层（1201）、空穴传输层（1202）、若干个发光层（1203、1206）、电子传输层（1205）、电子注入层（1204），其中在每两个直接相邻的发光层之间设置有电荷产生层a（1207）和电荷产生层b（1208）。从串联式顶发射OLED器件的第一个发光单元到第N个发光单元，均采用同质结结构，减少了有机材料的使用种类，消减了器件中载流子的注入势垒，提高了载流子的注入和器件的效率，降低了器件的驱动电压。

Description

有机发光二极管器件及显示面板、显示装置 技术领域
本发明涉及显示技术领域，尤其涉及一种有机发光二极管器件及显示面板、显示装置。
背景技术
有机发光二极管(Organic Light-Emitting Diode，OLED)具有能耗低、驱动电压低、色域广、制备工艺简单、视角宽、响应快等特点，是下一代平板显示装置的有力竞争者，因而成为近年来国际上的研究热点。
得到广泛研究的串联式OLED包含多个发光单元，并将多个发光单元之间用电荷产生层进行连接，其发光互不影响，而且器件内的电流密度较低，可有效地避免过剩电流作用导致的热猝灭效应，进一步提高OLED的电流效率、亮度、寿命等。通过掺杂不同发光波长的发光材料，串联式OLED的各发光单元可以同时产生红、绿、蓝三基色；因而，串联结构在制备高性能白光有机电致发光器件中的应用也很受关注。而且，考虑到显示画面品质不均匀的问题，多会通过增加晶体管的方式进行补偿，尤其以顶发射的OLED器件而言效果最好。
然而，目前的顶发射的串联式OLED的层数太多，导致器件驱动电压偏高，以及载流子从电荷产生层注入到发光层的过程中，还需克服电极与注入层、注入层与传输层以及传输层与发光层间存在的能级差，才能到达发光层。因此，若要将串联式OLED结构运用到顶发射器件中，势必要解决由于较高能极差而带来的高驱动电压的问题。当界面存在有较大的能级差时，载流子就不容易进入到发光层中，从而会累积在界面势垒上，导致发光器件的的驱动电压升高，效率降低。
发明内容
本发明实施例提供一种有机电致发光器件及显示面板、显示装置，用以解决现有技术中存在由于串联式OLED的层数太多而导致的势垒过高，进而造成器件驱动电压偏高的问题。
本发明实施例采用以下技术方案：
一种有机发光二极管器件，包括：
阳极，功能层，阴极；
其中，所述功能层包括：从靠近阳极一侧依次设置的空穴注入层、空穴传输层、若干个发光层、电子传输层、电子注入层，其中在每两个直接相邻的发光层之间设置有电荷产生层a和电荷产生层b；
所述功能层中的所有结均为同质结。
优选地，所述功能层从阳极一侧至阴极一侧依次包括：
空穴注入层，空穴传输层，阳极侧发光层，电荷产生层a，电荷产生层b，阴极侧发光层，电子传输层，电子注入层。
优选地，所述功能层从阳极一侧至阴极一侧依次包括：
空穴注入层，空穴传输层，阳极侧发光层，第一电荷产生层a，第一电荷产生层b，中间发光层，第二电荷产生层a，第二电荷产生层b，阴极侧发光层，电子传输层，电子注入层。
优选地，所述功能层中所有膜层均为掺杂型膜层。
优选地，所述功能层中电荷产生层a和电荷产生层b均为单一物质梯度掺杂型膜层，其中，任一电荷产生层a或电荷产生层b的掺杂浓度沿指向直接相邻发光层的方向依次降低。
优选地，所述功能层中电荷产生层a和电荷产生层b的主体(host)材料为同一种有机材料，同一组的电荷产生层a和电荷产生层b的掺杂客体(doping object)材料不相同，所述掺杂客体材料为金属材料或金属化合物材料或有机材料。
优选地，所述功能层中的任一电荷产生层a掺杂有金属，其掺杂浓度沿指向直接相邻发光层的方向依次为5％-0％，其中，所述金属至少包括以下之一或组合：锂、钾、铷、铯、镁、钙、钠；
任一电荷产生层b掺杂有第一金属化合物，其掺杂浓度沿指向直接相邻发光层的方向依次为30％-0％，其中，所述第一金属化合物至少包括以下之一或组合：三氧化钼、五氧化二钒、三氧化钨、氯化铁、四氧化三铁。
优选地，所述功能层中的任一电荷产生层a掺杂有第二金属化合物，其掺杂浓度沿指向直接相邻发光层的方向依次为15％-0％，其中，所述第二金属化合物至少包括以下之一或组合：碳酸铯、氟化锂、碳酸锂、氯化钠、氯化铁、四氧化三铁；
任一电荷产生层b掺杂有第一金属化合物，其掺杂浓度沿指向直接相邻发光层的方向依次为30％-0％。
优选地，所述功能层中的任一电荷产生层a掺杂有第一有机物，其掺杂浓度沿指向直接相邻发光层的方向依次为50％-0％，其中，所述第一有机物至少包括以下之一或组合：富勒烯、酞箐类衍生物；
任一电荷产生层b掺杂有第二有机物，其掺杂浓度沿指向直接相邻发光层的方向依次为50％-0％，其中，所述第二有机物至少包括以下之一或组合：并五苯、四氟四氰基醌二甲烷、酞箐类衍生物。
本发明实施例还提供了一种显示面板，包括如上所述的有机发光二极管器件。
本发明实施例还提供了一种显示装置，包括如上所述的显示面板。
在本发明实施例中，对现有的串联式顶发射OLED器件进行了改进，利用了同质结结构以及对串联在一起的顶发射OLED器件的功能层进行了改进。所述功能层包括：从靠近阳极一侧依次设置的空穴注入层、空穴传输层、若干个发光层、电子传输层、电子注入层，其中在每两个直接相邻的发光层之间设置有电荷产生层a和电荷产生层b。从串联式顶发射OLED器件的第一个发光单元到第N个发光单元，均采用同质结结构，减少了有机材料的使用种类，消减了器件中载流子的注入势垒，提高了载流子的注入和器件的效率，降低了器件的驱动电压。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简要介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域的普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例提供的一种有机发光二极管器件的结构示意图；
图2为本发明实施例提供的包括两个发光单元的OLED器件的结构示意图；
图3为本发明实施例提供的包括三个发光单元的OLED器件的结构示意图；
图4(a)-图4(b)分别为本发明实施例中提供的同质结结构的电荷产生层掺杂客体材料包含金属的两种串联式OLED器件的结构示意图；
图5(a)-图5(b)分别为本发明实施例中提供的同质结结构的电荷产生层掺杂客体材料包含金属化合物的两种串联式OLED器件的结构示意图；以及
图6(a)-图6(b)分别为本发明实施例中提供的同质结结构的电荷产生层掺杂客体材料包含有机物的两种串联式OLED器件的结构示意图。
具体实施方式
为了使本发明的目的、技术方案和优点更加清楚，下面将结合附图对本发明作进一步地详细描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
下面通过具体的实施例对本发明所涉及的技术方案进行详细描述，本发明包括但并不限于以下实施例。
如图1所示，为本发明实施例提供的一种有机发光二极管器件的结构示意图，由图中可知，该有机发光二极管器件为顶发射类型，具体包括：
阳极11，功能层12，阴极13；
其中，所述功能层12包括：从靠近阳极一侧依次设置的空穴注入层1201、空穴传输层1202、若干个发光层1203、1206、电子传输层1205、电子注入层1204，其中在每两个直接相邻的发光层1203、1206之间设置有电荷产生层a 1207和电荷产生层b 1208；
所述功能层12中的所有结均为同质结。
由上述可知，在该有机发光二极管中，除了阳极11和阴极13外，其他膜层均采用同质结结构，其中，同质结结构为相邻膜层包含同一种材料，从而，在一定程度上消减了载流子的注入势垒，提高了载流子的注入效率；而且，本发明的串联结构不同于现有技术中直接将多个OLED串联在一起，而是仅保留靠近阳极的有机发光二极管的空穴 注入层、空穴传输层、阳极侧发光层以及靠近阴极的有机发光二极管的电子注入层、电子传输层、阴极侧发光层，中间通过至少一组电荷产生层a和电荷产生层b相连，省去了靠近阳极的有机发光二极管的电子注入层、电子传输层、阴极侧发光层，以及靠近阴极的有机发光二极管的空穴注入层、空穴传输层、阳极侧发光层，以及位于串联OLED器件的中间位置的各个有机发光二极管的功能层。从而，通过多组电荷产生层a和电荷产生层b将多个OLED连接在一起，在保证OLED器件的电流效率、亮度、寿命的同时，还可以通过减少串联OLED器件的膜层厚度的方式降低器件的驱动电压，提升了串联式OLED器件的效率。
在本发明实施例中，对现有的串联式顶发射OLED器件进行了改进，利用了同质结结构以及对串联在一起的顶发射OLED器件的功能层进行了改进。所述功能层包括：从靠近阳极一侧依次设置的空穴注入层、空穴传输层、若干个发光层、电子传输层、电子注入层，其中在每两个直接相邻的发光层之间设置有电荷产生层a和电荷产生层b。从串联式顶发射OLED器件的第一个发光单元到第N个发光单元，均采用同质结结构，减少了有机材料的使用种类，消减了器件中载流子的注入势垒，提高了载流子的注入和器件的效率，降低了器件的驱动电压。
优选地，如图2所示，为本发明实施例提供的包括两个发光单元的OLED器件，该器件包括：
阳极21，功能层22，阴极23，其中，所述功能层22从阳极21一侧至阴极23一侧依次包括：
空穴注入层2201，空穴传输层2202，阳极侧发光层2203，电荷产生层a 2204，电荷产生层b 2205，阴极侧发光层2206，电子传输层2207，电子注入层2208。
在该图2所示的串联式OLED器件中，一方面，由于该器件的所有结均采用同质结结构，即所有膜层的主体材料均为同一种材料，通过掺杂不同的材料实现空穴的迁移和电子的迁移，从而，在一定程度上降低了各个膜层之间的载流子的注入势垒，提高了载流子的注入效率；另一方面，两个串联在一起的OLED并不具有完整的传统结构，靠近阳极的一侧OLED去掉了阴极侧的功能层(例如，电子传输层、 电子注入层)，靠近阴极的一侧OLED去掉了阳极侧的功能层(例如，空穴传输层、空穴注入层)。并且，通过至少一组电荷产生层a和电荷产生层b相连，直接减少了串联式OLED器件的膜层厚度，这也在一定程度上削减了载流子的注入势垒，从而降低了串联式OLED器件的驱动电压。
优选地，如图3所示，为本发明实施例提供的包括三个发光单元的OLED器件，该图3仅为示例，本发明所涉及的方案中，并不限于包括三个发光单元的OLED器件，还可以包括三个以上的多个发光单元的OLED器件。
该OLED器件包括：
阳极31，功能层32，阴极33，所述功能层32从阳极31一侧至阴极33一侧依次包括：
空穴注入层3201，空穴传输层3202，阳极侧发光层3203，第一电荷产生层a 3204，第一电荷产生层b 3205，中间发光层3206，第二电荷产生层a 3207，第二电荷产生层b 3208，阴极侧发光层3209，电子传输层3210，电子注入层3211。
在该图3所示的串联式OLED器件中，不同于上述两个OLED发光单元串联在一起，而是三个OLED发光单元串联在一起。为了能够满足本发明的减小膜层厚度的目的，以及三个OLED发光单元能够很好的串联起来并能够实现载流子的迁移，仅保留该OLED发光单元的发光层，即图3所示的中间发光层3206，该中间发光层3206通过左侧的第一电荷产生层a 3204和第一电荷产生层b 3205这一组电荷产生层与靠近阳极一侧的第一OLED发光单元相连，同时，通过右侧的第二电荷产生层a 3207和第二电荷产生层b 3208这一组电荷产生层与靠近阴极一侧的第二OLED发光单元相连。这种连接结构，实现了多个OLED发光单元的有效串联，同时，减少了串联式OLED器件的膜层厚度，在一定程度上削弱了载流子的注入势垒，进而，降低了串联式OLED器件的驱动电压，提高了串联式OLED器件的效率。
优选地，在上述所涉及的串联式OLED器件结构中，所述功能层中除空穴传输层和电子传输层之外的膜层外，其他必须为掺杂型膜层，空穴传输层和电子传输层可掺杂、可不掺杂。而且，每一膜层的主体材料均相同，掺杂客体材料、掺杂浓度根据膜层的功能进行选取，详 细的掺杂方式在下面的内容中介绍。
优选地，所述功能层中电荷产生层a和电荷产生层b均为单一物质梯度掺杂型膜层，其中，任一电荷产生层a或电荷产生层b的掺杂浓度沿指向直接相邻发光层的方向依次降低。
优选地，所述功能层中电荷产生层a和电荷产生层b的主体材料为同一种有机材料，同一组的电荷产生层a和电荷产生层b的掺杂客体材料不相同，所述掺杂客体材料为金属材料或金属化合物材料或有机材料。
考虑到本发明实施例所涉及的串联式OLED器件为同质结结构，则该串联式OLED器件的每个膜层的主体材料相同，且为了能够满足尽量低的载流子注入势垒，需要考虑空穴迁移率和电子迁移率接近的材料，例如：CBP(4，4’-bis(9-carbazolyl)-biphenyl)，中文名为4，4′-双(9H-咔唑-9-基)联苯，其在0.5MV/cm的电场作用下，空穴迁移率和电子迁移率分别为2*10-3cm2/V*s和3*10-4cm2/V*s，因此，CBP既可以作为空穴传输层材料使用，又可以作为电子传输层使用；此外，46DCzPPm(4，6-bis[3-(carbazol-9-yl)phenyl]pyrimidine)，中文名为4，6-二[3-(咔唑-9-基)苯基]嘧啶，其在0.5MV/cm的电场作用下，空穴迁移率和电子迁移率分别为1.3*10-5cm2/V*s和4.2*10-4cm2/V*s。
下面以46DCzPPm作为本发明的串联式OLED器件的示例性主体材料，任一电荷产生层a和电荷产生层b的掺杂客体材料不同为例进行说明。
(一)、同质结结构的电荷产生层掺杂客体材料包含金属
优选地，在该串联式OLED器件中，所述功能层中的任一电荷产生层a掺杂有金属，其掺杂浓度沿指向直接相邻发光层的方向依次为5％-0％，其中，所述金属至少包括以下之一或组合：锂Li、钾K、铷Rb、铯Cs、镁Mg、钙Ca、钠Na；
任一电荷产生层b掺杂有第一金属化合物，其掺杂浓度沿指向直接相邻发光层的方向依次为30％-0％，其中，所述第一金属化合物至少包括以下之一或组合：三氧化钼MoO3、五氧化二钒V2O5、三氧化钨WO3、氯化铁FeCl3、四氧化三铁Fe3O4。
在本发明实施例中，所涉及的阳极为ITO/Ag/ITO的玻璃基底，该膜层中的Ag起到了反射作用，以将从发光层发射而来的光从顶部反射 出去。所涉及的阴极为单一金属或金属混合物。
一种优选地实施例，在本发明所涉及的串联式OLED器件中，如图4(a)所示的包含两个发光单元的串联式OLED器件的结构示意图，该串联式OLED器件由阳极至阴极依次包括：
阳极41，该阳极41为ITO/Ag/ITO的玻璃基底；功能层42；以及阴极43，该阴极43为单一金属或金属混合物，例如镁Mg或银Ag。
其中功能层42具体包括：空穴注入层4201、空穴传输层4202、阳极侧发光层4203、电荷产生层a 4204、电荷产生层b 4205、阴极侧发光层4206、电子传输层4207、电子注入层4208。其中，空穴注入层4201的主体材料为46DCzPPm，掺杂客体材料为三氧化钼MoO3；空穴传输层4202的主体材料为46DCzPPm，可以不存在掺杂客体材料，也可以进行掺杂；阳极侧发光层4203的主体材料为46DCzPPm，该结构膜层可掺杂客体材料，也可以不掺杂，掺杂客体材料根据发光颜色的需求进行选择，可以选择的颜色类型包括：红色、绿色、蓝色、白色、或者两种色调的组合或三种色调的组合，例如：假设希望当前阳极侧发光层4203发蓝光，则选择掺杂客体材料为：FIrpic(iridium bis(4，6-di-fluorophenyl)-pyridinato-N，C2-picolinate)；电荷产生层a 4204的主体材料为46DCzPPm，掺杂客体材料为锂Li，其掺杂浓度沿指向直接相邻发光层的方向依次为5％-0％；电荷产生层b 4205的主体材料为46DCzPPm，掺杂客体材料为三氧化钼MoO3，其掺杂浓度沿指向直接相邻发光层的方向依次为30％-0％；阴极侧发光层4206的主体材料为46DCzPPm，该结构膜层可掺杂客体材料，也可以不掺杂，其掺杂客体材料可以与上述阳极侧发光层4203的掺杂客体材料相同；电子传输层4207的主体材料为46DCzPPm，不存在掺杂客体材料；电子注入层4208的主体材料为46DCzPPm，掺杂客体材料为碳酸铯Cs2O3。
在实际的制备过程中，在玻璃基底上依次制作8nm厚的第一层ITO，100nm厚的Ag，8nm厚的第二层ITO，得到ITO玻璃基底；将该顶发射的ITO玻璃基底(其面电阻＜30Ω)，依次在去离子水、丙酮、和无水乙醇超声环境中清洗，然后用N2吹干，并进行等离子O2的处理；将处理好的基底置于蒸镀腔室中，待真空度低于5×10-4Pa后，通过真空热蒸镀的方式，在ITO面依次沉积10nm厚的空穴注入层46DCzPPm：MoO3(46DCzPPm：MoO3表示MoO3掺杂在46DCzPPm中， 以下皆类似)，90nm厚的空穴传输层46DCzPPm，20nm厚的阳极侧发光层46DCzPPm：FIrpic，40nm厚的电荷产生层a 46DCzPPm：Li和40nm厚的电荷产生层b 46DCzPPm：MoO3，20nm厚的阴极侧发光层46DCzPPm：FIrpic，30nm厚的电子传输层46DCzPPm，10nm厚的电子注入层46DCzPPm：Cs2CO3，14nm厚的阴极，以及光取出层CPL。上述蒸镀过程中，除使用金属阴极掩膜版且蒸发速率为0.3nm/s外，其余各层均使用开放掩膜版且蒸发速率为0.1nm/s。从制作工艺角度考虑，由于采用了同质结结构，在蒸镀过程中减少了材料的使用种类，简化了工艺制程。
另一种优选地实施例，如图4(b)所示的包含三个发光单元的串联式OLED器件的结构示意图，该串联式OLED器件由阳极至阴极依次包括：
阳极41′，该阳极41′为ITO/Ag/ITO的玻璃基底；功能层42′；以及阴极43′，该阴极43′为单一金属或金属混合物，例如镁Mg或银Ag。
其中功能层42′具体包括：空穴注入层4201′、空穴传输层4202′、阳极侧发光层4203′、第一电荷产生层a 4204′、第一电荷产生层b4205′、中间发光层4206′、第二电荷产生层a 4207′、第二电荷产生层b 4208′、阴极侧发光层4209′、电子传输层4210′、电子注入层4211′。其中，空穴注入层4201′的主体材料为46DCzPPm，掺杂客体材料为三氧化钼MoO3；空穴传输层4202′的主体材料为46DCzPPm，可以不存在掺杂客体材料，也可以进行掺杂；阳极侧发光层4203′的主体材料为46DCzPPm，掺杂客体材料根据发光颜色的需求进行选择，同阳极侧发光层4203′类似；第一电荷产生层a 4204′的主体材料为46DCzPPm，掺杂客体材料为锂Li，其掺杂浓度沿指向直接相邻发光层的方向依次为5％-0％；第一电荷产生层b 4205′的主体材料为46DCzPPm，掺杂客体材料为三氧化钼MoO3，其掺杂浓度沿指向直接相邻发光层的方向依次为30％-0％；中间发光层4206′的主体材料46DCzPPm，掺杂客体材料根据发光颜色的需求进行选择，第二电荷产生层a 4207′的主体材料为46DCzPPm，掺杂客体材料为锂Li，或者其他的金属单质材料或金属化合物材料或有机物材料，其掺杂浓度可根据选择的掺杂客体材料进行设置，但必须要遵循掺杂浓度沿 指向直接相邻发光层的方向依次降低的原则；第二电荷产生层b 4208′的主体材料为46DCzPPm，掺杂客体材料为三氧化钼MoO3，其掺杂客体材料的选择也是比较灵活的，但是，必须与第二电荷产生层a 4207′的掺杂客体材料不同，相邻组间的掺杂客体可以相同，其掺杂浓度沿指向直接相邻发光层的方向依次降低；阴极侧发光层4209′的主体材料为46DCzPPm，其掺杂客体材料可以与上述阳极侧发光层4203′的掺杂客体材料相同；电子传输层4210′的主体材料为46DCzPPm，不存在掺杂客体材料；电子注入层4211′的主体材料为46DCzPPm，掺杂客体材料可以为碳酸铯Cs2O3。
本发明所涉及的包括三个或三个以上的发光单元的串联式OLED器件的制作工艺与上述包含两个发光单元的串联式OLED器件的制作工艺类似，在此不作赘述。
在上述串联式OLED器件的结构中，电荷产生层a 4204与电荷产生层b 4205之间形成具有pn结特性的同质结，并且两个电荷产生层的掺杂浓度均沿着远离同质结的方向降低。
(二)、同质结结构的电荷产生层掺杂客体材料包含金属化合物
优选地，在该串联式OLED器件中，所述功能层中的任一电荷产生层a掺杂有第二金属化合物，其掺杂浓度沿指向直接相邻发光层的方向依次为15％-0％，其中，所述第二金属化合物至少包括以下之一或组合：碳酸铯Cs2O3、氟化锂LiF、碳酸锂Li2CO3、氯化钠NaCl、氯化铁FeCl3、四氧化三铁Fe3O4；
任一电荷产生层b掺杂有第一金属化合物，其掺杂浓度沿指向直接相邻发光层的方向依次为30％-0％。
一种较为优选的实施例，如图5(a)所示，该串联式OLED器件中与图4(a)中的串联式OLED器件的结构类似，该串联式OLED器件由阳极至阴极依次包括：
阳极51，该阳极51为ITO/Ag/ITO的玻璃基底；功能层52；以及阴极53，该阴极53为单一金属或金属混合物，例如镁Mg或银Ag。
其中功能层52具体包括：空穴注入层5201、空穴传输层5202、阳极侧发光层5203、电荷产生层a 5204、电荷产生层b 5205、阴极侧发光层5206、电子传输层5207、电子注入层5208。唯一不同的是，在图5(a)所示的串联式OLED器件的功能层中的电荷产生层a 5204的 掺杂客体材料由金属替换为金属化合物碳酸铯Cs2O3，其掺杂浓度沿指向直接相邻发光层的方向依次为15％-0％；电荷产生层b 5205仍掺杂有三氧化钼MoO3，其掺杂浓度沿指向直接相邻发光层的方向依次为30％-0％。
另一种较为优选地实施例，如图5(b)所示，该串联式OLED器件中与图4(b)中的串联式OLED器件的结构类似，该串联式OLED器件由阳极至阴极依次包括：
阳极51′，该阳极51′为ITO/Ag/ITO的玻璃基底；功能层52′；以及阴极53′，该阴极53′为单一金属或金属混合物，例如镁Mg或银Ag。
其中功能层52′具体包括：空穴注入层5201′、空穴传输层5202′、阳极侧发光层5203′、第一电荷产生层a 5204′、第一电荷产生层b5205′、中间发光层5206′、第二电荷产生层a 5207′、第二电荷产生层b 5208′、阴极侧发光层5209′、电子传输层5210′、电子注入层5211′。唯一不同的是，在图5(b)所示的串联式OLED器件的功能层中的第一电荷产生层a 5204′和/或第二电荷产生层a 5207′的掺杂客体材料由金属替换为金属化合物碳酸铯Cs2O3，其掺杂浓度沿指向直接相邻发光层的方向依次为15％-0％；第一电荷产生层b 5205′和第二电荷产生层b 5208′仍掺杂有三氧化钼MoO3，其掺杂浓度沿指向直接相邻发光层的方向依次为30％-0％。
在本实施例中，电荷产生层中掺杂有金属化合物，相比于金属单质而言，其稳定性要高，不易于被侵蚀，因此，制备而成的串联式OLED器件不仅具备本发明实施例方案所涉及的其他效果，同时，该串联式OLED器件的寿命较高。
(三)、同质结结构的电荷产生层掺杂客体材料包含有机物
优选地，在该串联式OLED器件中，所述功能层中的任一电荷产生层a掺杂有第一有机物，其掺杂浓度沿指向直接相邻发光层的方向依次为50％-0％，其中，所述第一有机物至少包括以下之一或组合：富勒烯C60、酞箐类衍生物；
任一电荷产生层b掺杂有第二有机物，其掺杂浓度沿指向直接相邻发光层的方向依次为50％-0％，其中，所述第二有机物至少包括以下之一或组合：并五苯Pentacene、四氟四氰基醌二甲烷F4-TCNQ、酞箐 类衍生物。
一种较为优选的实施例，如图6(a)所示，该串联式OLED器件中与图4(a)中的串联式OLED器件的结构类似，该串联式OLED器件由阳极至阴极依次包括：
阳极61，该阳极61为ITO/Ag/ITO的玻璃基底；功能层62；以及阴极63，该阴极63为单一金属或金属混合物，例如镁Mg或银Ag。
其中功能层62具体包括：空穴注入层6201、空穴传输层6202、阳极侧发光层6203、电荷产生层a 6204、电荷产生层b 6205、阴极侧发光层6206、电子传输层6207、电子注入层6208。唯一不同的是，在图6(a)所示的串联式OLED器件的功能层中的电荷产生层a 6204的掺杂客体材料由金属替换为有机物足球烯C60，其掺杂浓度沿指向直接相邻发光层的方向依次为50％-0％；电荷产生层b 6205掺杂有并五苯Pentacene，化学式为C22H14，其掺杂浓度沿指向直接相邻发光层的方向依次为50％-0％。
另一种较为优选地实施例，如图6(b)所示，该串联式OLED器件中与图4(b)中的串联式OLED器件的结构类似，该串联式OLED器件由阳极至阴极依次包括：
阳极61′，该阳极61′为ITO/Ag/ITO的玻璃基底；功能层62′；以及阴极63′，该阴极63′为单一金属或金属混合物，例如镁Mg或银Ag。
其中功能层62′具体包括：空穴注入层6201′、空穴传输层6202′、阳极侧发光层6203′、第一电荷产生层a 6204′、第一电荷产生层b6205′、中间发光层6206′、第二电荷产生层a 6207′、第二电荷产生层b 6208′、阴极侧发光层6209′、电子传输层6210′、电子注入层6211′。唯一不同的是，在图5(b)所示的串联式OLED器件的功能层中的第一电荷产生层a 6204′和/或第二电荷产生层a 6207′的掺杂客体材料由金属替换为有机物，例如足球烯C60，其掺杂浓度沿指向直接相邻发光层的方向依次为15％-0％；第一电荷产生层b 6205′和第二电荷产生层b 6208′掺杂有并五苯Pentacene，化学式为C22H14，其掺杂浓度沿指向直接相邻发光层的方向依次为30％-0％。
综上，需要说明的是，在本发明实施例中，当出现至少两组电荷产生层a和电荷产生层b时，各组间包含的电荷产生层a和电荷产生层 b可以为全部相同，也可以为部分相同，或完全不相同。
在本实施例中，电荷产生层中掺杂有有机物材料，相比于金属以及金属化合物而言，其稳定性要高，不易于被侵蚀，因此，制备而成的串联式OLED器件不仅具备本发明实施例方案所涉及的其他效果，同时，该串联式OLED器件的寿命较高。
本发明实施例还提供了一种显示面板，该显示面板包括上述实施例所提供的任一一种串联式OLED器件。其中，该显示面板可用于制备手机、平板电脑、电视机等显示装置。
同时，本发明实施例还提供了一种显示装置，该显示装置包括上述显示面板；除此之外，还包括其他必要的现有结构，如电源单元、封闭基板、封装模块等。该显示装置可以为手机、平板电脑、电视机等。
尽管已描述了本发明的优选实施例，但本领域内的技术人员一旦得知了基本创造性概念，则可对这些实施例作出另外的变更和修改。所以，所附权利要求意欲解释为包括优选实施例以及落入本发明范围的所有变更和修改。
显然，本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (11)

  1. 一种有机发光二极管器件，其特征在于，包括：
    阳极，功能层，阴极；
    其中，所述功能层包括：从靠近阳极一侧依次设置的空穴注入层、空穴传输层、若干个发光层、电子传输层、电子注入层，其中在每两个直接相邻的发光层之间设置有电荷产生层a和电荷产生层b；
    所述功能层中的所有结均为同质结。
  2. 如权利要求1所述的有机发光二极管器件，其特征在于，所述功能层从阳极一侧至阴极一侧依次包括：
    空穴注入层，空穴传输层，阳极侧发光层，电荷产生层a，电荷产生层b，阴极侧发光层，电子传输层，电子注入层。
  3. 如权利要求1所述的有机发光二极管器件，其特征在于，所述功能层从阳极一侧至阴极一侧依次包括：
    空穴注入层，空穴传输层，阳极侧发光层，第一电荷产生层a，第一电荷产生层b，中间发光层，第二电荷产生层a，第二电荷产生层b，阴极侧发光层，电子传输层，电子注入层。
  4. 如权利要求1-3任一所述的有机发光二极管器件，其特征在于，所述功能层中所有膜层均为掺杂型膜层。
  5. 如权利要求1-3任一所述的有机发光二极管器件，其特征在于，所述功能层中电荷产生层a和电荷产生层b均为单一物质梯度掺杂型膜层，其中，任一电荷产生层a或电荷产生层b的掺杂浓度沿指向直接相邻发光层的方向依次降低。
  6. 如权利要求1-3任一所述的有机发光二极管器件，其特征在于，所述功能层中电荷产生层a和电荷产生层b的主体材料为同一种有机材料，同一组的电荷产生层a和电荷产生层b的掺杂客体材料不相同，所述掺杂客体材料为金属材料或金属化合物材料或有机材料。
  7. 如权利要求6所述的有机发光二极管器件，其特征在于，所述功能层中的任一电荷产生层a掺杂有金属，其掺杂浓度沿指向直接相邻发光层的方向依次为5％-0％，其中，所述金属至少包括以下之一或组合：锂、钾、铷、铯、镁、钙、钠；
    任一电荷产生层b掺杂有第一金属化合物，其掺杂浓度沿指向直 接相邻发光层的方向依次为30％-0％，其中，所述第一金属化合物至少包括以下之一或组合：三氧化钼、五氧化二钒、三氧化钨、氯化铁、四氧化三铁。
  8. 如权利要求6所述的有机发光二极管器件，其特征在于，所述功能层中的任一电荷产生层a掺杂有第二金属化合物，其掺杂浓度沿指向直接相邻发光层的方向依次为15％-0％，其中，所述第二金属化合物至少包括以下之一或组合：碳酸铯、氟化锂、碳酸锂、氯化钠、氯化铁、四氧化三铁；
    任一电荷产生层b掺杂有第一金属化合物，其掺杂浓度沿指向直接相邻发光层的方向依次为30％-0％。
  9. 如权利要求6所述的有机发光二极管器件，其特征在于，所述功能层中的任一电荷产生层a掺杂有第一有机物，其掺杂浓度沿指向直接相邻发光层的方向依次为50％-0％，其中，所述第一有机物至少包括以下之一或组合：富勒烯、酞箐类衍生物；
    任一电荷产生层b掺杂有第二有机物，其掺杂浓度沿指向直接相邻发光层的方向依次为50％-0％，其中，所述第二有机物至少包括以下之一或组合：并五苯、四氟四氰基醌二甲烷、酞箐类衍生物。
  10. 一种显示面板，其特征在于，包括权利要求1-9任一所述的有机发光二极管器件。
  11. 一种显示装置，其特征在于，包括权利要求10所述的显示面板。
PCT/CN2016/075916 2015-03-30 2016-03-09 有机发光二极管器件及显示面板、显示装置 WO2016155475A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/321,548 US10424754B2 (en) 2015-03-30 2016-03-09 Organic light emitting diode device, display panel and display device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201510144814.7A CN104701459B (zh) 2015-03-30 2015-03-30 一种有机发光二极管器件及显示面板、显示装置
CN201510144814.7 2015-03-30

Publications (1)

Publication Number Publication Date
WO2016155475A1 true WO2016155475A1 (zh) 2016-10-06

Family

ID=53348373

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2016/075916 WO2016155475A1 (zh) 2015-03-30 2016-03-09 有机发光二极管器件及显示面板、显示装置

Country Status (3)

Country Link
US (1) US10424754B2 (zh)
CN (1) CN104701459B (zh)
WO (1) WO2016155475A1 (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104701459B (zh) 2015-03-30 2018-09-11 京东方科技集团股份有限公司 一种有机发光二极管器件及显示面板、显示装置
CN104966789A (zh) * 2015-06-30 2015-10-07 深圳市华星光电技术有限公司 一种电荷连接层及其制造方法、叠层oled器件
CN109585665A (zh) * 2018-11-30 2019-04-05 云谷（固安）科技有限公司 一种发光元件以及显示装置
CN110767715B (zh) * 2019-03-29 2022-03-01 昆山国显光电有限公司 显示装置及其oled透光基板、oled基板
CN110518136B (zh) * 2019-08-30 2021-12-14 京东方科技集团股份有限公司 一种有机电致发光器件、显示面板及显示装置
CN111599929A (zh) * 2020-05-08 2020-08-28 义乌清越光电科技有限公司 有机电致发光二极管和有机电致发光装置
CN111725411A (zh) * 2020-06-11 2020-09-29 武汉华星光电半导体显示技术有限公司 有机发光器件及显示面板、显示装置
CN114613927B (zh) * 2022-05-11 2022-07-29 南京迪视泰光电科技有限公司 一种电荷产生层、电致发光器件及其制备方法
CN114864852B (zh) * 2022-07-06 2022-11-25 京东方科技集团股份有限公司 发光器件和显示面板
CN115377310A (zh) * 2022-08-29 2022-11-22 京东方科技集团股份有限公司 一种发光器件和显示面板
CN115734637A (zh) * 2022-11-28 2023-03-03 云谷（固安）科技有限公司 电荷产生层和叠层有机发光器件
CN118201382A (zh) * 2022-12-14 2024-06-14 Tcl科技集团股份有限公司 发光器件及其制备方法、显示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102027614A (zh) * 2008-05-16 2011-04-20 株式会社半导体能源研究所 发光元件、发光装置和电子设备
CN104393185A (zh) * 2014-11-25 2015-03-04 京东方科技集团股份有限公司 一种叠层有机电致发光器件及其制作方法
CN104701459A (zh) * 2015-03-30 2015-06-10 京东方科技集团股份有限公司 一种有机发光二极管器件及显示面板、显示装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000196140A (ja) * 1998-12-28 2000-07-14 Sharp Corp 有機エレクトロルミネッセンス素子とその製造法
US7539963B2 (en) 2003-10-24 2009-05-26 Fujitsu Microelectronics Limited Semiconductor device group and method for fabricating the same, and semiconductor device and method for fabricating the same
US7045952B2 (en) * 2004-03-04 2006-05-16 Universal Display Corporation OLEDs with mixed host emissive layer
US20060125379A1 (en) * 2004-12-09 2006-06-15 Au Optronics Corporation Phosphorescent organic optoelectronic structure
US7728517B2 (en) * 2005-05-20 2010-06-01 Lg Display Co., Ltd. Intermediate electrodes for stacked OLEDs
KR101316752B1 (ko) * 2007-05-31 2013-10-08 삼성디스플레이 주식회사 백색 유기발광소자
US20090001885A1 (en) 2007-06-27 2009-01-01 Spindler Jeffrey P Tandem oled device
CN102197507A (zh) * 2008-10-28 2011-09-21 密执安州立大学董事会 具有单独的红色、绿色和蓝色子元件的堆叠式白色oled
CN101794864B (zh) 2009-07-14 2012-09-05 重庆师范大学 一种叠层有机电致发光器件及其制备方法
CN201562694U (zh) 2009-07-16 2010-08-25 昆山维信诺显示技术有限公司 一种可透视光源及包括这种光源的层叠显示器件
US9401493B2 (en) * 2010-01-26 2016-07-26 Unified Innovative Technology, Llc Organic electroluminescent element, method for manufacturing same, and organic electroluminescent display device
CN102270747A (zh) 2010-06-03 2011-12-07 昆山维信诺显示技术有限公司 一种有机电致发光器件
US8637858B2 (en) 2010-09-24 2014-01-28 Novaled Ag Tandem white OLED
JP2013545249A (ja) * 2010-12-09 2013-12-19 ▲海▼洋王照明科技股▲ふん▼有限公司 両面発光有機エレクトロルミネッセンスデバイス及びその製造方法
CN102842680A (zh) * 2011-06-21 2012-12-26 海洋王照明科技股份有限公司 有机电致发光器件及其制备方法
CN102847680A (zh) 2011-06-27 2013-01-02 四平市华远环保机械制造有限公司 高炉矿渣微粉复式涡流超细分选机
DE102011084639A1 (de) * 2011-10-17 2013-04-18 Osram Opto Semiconductors Gmbh Organisches elektronisches bauelement mit dotierstoff, verwendung eines dotierstoffs und verfahren zur herstellung des dotierstoffs
GB2508092B (en) * 2012-10-31 2015-09-23 Lg Display Co Ltd Light emitting device and organic light emitting display device including the same
CN104218165A (zh) * 2014-08-20 2014-12-17 京东方科技集团股份有限公司 一种有机发光二极管器件及显示装置
CN104393184B (zh) * 2014-11-18 2018-06-12 深圳市华星光电技术有限公司 白光oled显示屏及其串联式白光有机发光二极管

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102027614A (zh) * 2008-05-16 2011-04-20 株式会社半导体能源研究所 发光元件、发光装置和电子设备
CN104393185A (zh) * 2014-11-25 2015-03-04 京东方科技集团股份有限公司 一种叠层有机电致发光器件及其制作方法
CN104701459A (zh) * 2015-03-30 2015-06-10 京东方科技集团股份有限公司 一种有机发光二极管器件及显示面板、显示装置

Also Published As

Publication number Publication date
CN104701459B (zh) 2018-09-11
US10424754B2 (en) 2019-09-24
CN104701459A (zh) 2015-06-10
US20170213992A1 (en) 2017-07-27

Similar Documents

Publication Publication Date Title
WO2016155475A1 (zh) 有机发光二极管器件及显示面板、显示装置
US11139445B2 (en) Light-emitting element, light-emitting device, electronic device, and lighting device
KR102108524B1 (ko) 유기전계발광소자
US8389979B2 (en) Light-emitting element, light-emitting device, electronic device, and lighting device
TWI445445B (zh) 有機發光裝置及其製造方法
KR102104978B1 (ko) 유기 발광 표시 장치 및 그 제조 방법
US9293736B2 (en) Organic light emitting element having emission layers and an electron injection layer including fullerene and lithium quinolate
KR101367584B1 (ko) 유기 발광 소자 및 이의 제조방법
JP2009245747A (ja) 有機発光表示装置
KR20090132004A (ko) 유기 발광 표시장치
CN110335954B (zh) 一种高效稳定的白光有机电致发光器件及其制备方法
WO2015089986A1 (zh) Oled显示器件及其制备方法、oled显示装置
WO2017000635A1 (zh) 一种串联式有机发光二极管、阵列基板及显示装置
JP4915651B2 (ja) 有機エレクトロルミネッセンス素子
CN101859879A (zh) 一种白色有机电致发光器件及其制备方法
KR20130096531A (ko) 인버티드 유기 발광 소자 및 이를 포함하는 디스플레이 장치
WO2021238448A1 (zh) 有机电致发光器件及阵列基板
KR102009804B1 (ko) 유기 발광 다이오드 표시 장치 및 이의 제조 방법
KR101259532B1 (ko) 2종의 유기층을 이용하는 백색 유기 발광 다이오드 및 이의 제조 방법
Yang et al. Influence of the hole transport layer on spectral stability in the white phosphorescent organic light emitting diode with non-doped structure
TW201537802A (zh) 有機發光二極體及使用其之顯示面板
KR102081122B1 (ko) 유기 발광 표시 장치
TW201316583A (zh) 白光有機發光二極體構造
Ge et al. Influence of the Mixed-Host Heterojunction on the Spectrum Stability in White Phosphorescent Organic Light Emitting Diodes
TWI410162B (zh) 含奈米點之有機發光二極體裝置結構

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16771230

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 15321548

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 15/03/2018)

122 Ep: pct application non-entry in european phase

Ref document number: 16771230

Country of ref document: EP

Kind code of ref document: A1