WO2016082358A1 - 有机发光二极管阵列基板及其制备方法、显示装置 - Google Patents
有机发光二极管阵列基板及其制备方法、显示装置 Download PDFInfo
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- WO2016082358A1 WO2016082358A1 PCT/CN2015/073122 CN2015073122W WO2016082358A1 WO 2016082358 A1 WO2016082358 A1 WO 2016082358A1 CN 2015073122 W CN2015073122 W CN 2015073122W WO 2016082358 A1 WO2016082358 A1 WO 2016082358A1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3031—Two-side emission, e.g. transparent OLEDs [TOLED]
Definitions
- Embodiments of the present invention relate to an organic light emitting diode array substrate, a method of fabricating the same, and a display device.
- OLED Organic Light-Emitting Diode
- OELD Organic Electroluminesence Display
- the light of the OLED component is emitted from the lower substrate, that is, the lower light.
- the so-called top emission means that light is emitted from the upper side opposite thereto without passing through the lower substrate.
- the substrate is a highly reflective first electrode and the second electrode is light transmissive, light is emitted from the second electrode of the surface.
- the first electrode material uses conventional light-transmissive ITO and is matched with a light-transmissive second electrode, both sides of the component will emit light, which is a so-called transparent device.
- An embodiment of the present invention provides an organic light emitting diode array substrate, including: a substrate, a thin film transistor, an organic light emitting diode, and a filling layer disposed above the substrate, the organic light emitting diode including a first electrode and a second electrode And an organic electroluminescent layer disposed between the first electrode and the second electrode, wherein the thin film transistor is disposed in an opaque region of the OLED array substrate; In a light-transmitting region of the light-emitting diode array substrate, the substrate, the filling layer and the organic electroluminescent layer of the organic light-emitting diode are sequentially disposed adjacent to each other.
- Another embodiment of the present invention provides a method for fabricating an organic light emitting diode array substrate, the organic light emitting diode array substrate including a thin film transistor and an organic light emitting diode, the organic light emitting diode including a first electrode, a second electrode, and a location An organic electroluminescent layer between the first electrode and the second electrode, the method comprising:
- a portion of the organic electroluminescent layer of the organic light emitting diode is directly formed on the filling layer.
- Another embodiment of the present invention provides a display device including the above organic light emitting diode array substrate.
- FIG. 1 is a schematic structural diagram of an organic light emitting diode array substrate according to an embodiment of the present invention.
- each pixel in the active OLED lighting assembly is controlled by a thin film transistor, and each pixel is provided with an opaque region and a light transmitting region.
- the transmittance is defined as: The area of the opaque region is A1, the area of the light-transmitting region is A2, and the transmittance of the light-transmitting region is Ts1; therefore, if Ts1 is increased, the transmittance Ts of the entire component is increased.
- the embodiment of the present invention provides an OLED array substrate, a preparation method thereof, and a display device.
- a structure in which the substrate, the filling layer, and the organic electroluminescent layer are sequentially adjacent to each other is formed, and the light-transmitting effect of the light emitted from the light-emitting layer is improved.
- the filling layer adopts a material similar to the refractive index of the substrate, thereby further improving the transmittance of the light emitted from the light-emitting layer in the light-transmitting region, thereby improving the display effect of the display device.
- FIG. 1 is a cross-sectional view showing an organic light emitting diode array substrate according to an embodiment of the present invention. intention.
- an organic light emitting diode array substrate provided by an embodiment of the present invention includes a substrate 10 , a thin film transistor 30 and an organic light emitting diode 40 disposed on the substrate 10 and sequentially stacked in a direction away from the substrate 10 .
- the thin film transistor 30 is disposed in an opaque region of the OLED array substrate.
- the organic light emitting diode 40 includes a first electrode 41, an organic electroluminescent layer 42, and a second electrode 43 which are sequentially stacked in a direction away from the substrate 10.
- the first electrode 41 is located in the opaque region of the OLED array substrate and is disposed above the thin film transistor 30.
- the organic electroluminescent layer 42 and the second electrode 43 extend to the transparent region of the OLED array substrate, and the filling layer 50 located in the transparent region is disposed between the organic electroluminescent layer 42 and the substrate 10, And the filling layer 50 is adjacent to the organic electroluminescent layer 42 and adjacent to the substrate 10 below.
- the absolute value of the difference in refractive index between the filling layer 50 and the substrate 10 is within a set range.
- the thin film transistor 30 and the first electrode 41 are formed to be stacked on the same side of the filling layer 50, and the thickness after the thin film transistor 30 and the first electrode 41 does not exceed the thickness of the filling layer 50.
- the fill layer 50 is adjacent to the thin film transistor 30 and the first electrode 41.
- the thin film transistor 30 is disposed in the opaque region of the OLED array substrate, and only the filling layer 50, the organic electroluminescent layer 42 and the second electrode 43 are disposed in the transparent region, thereby reducing light propagation.
- the filling layer 50 which is similar in refractive index to the substrate 10, further increases the transmittance of light, thereby improving the display effect of the display device.
- the array substrate in the above embodiment further includes a pixel defining layer 38 disposed between the thin film transistor 30 and the organic electroluminescent layer 42.
- the OLED array substrate may be an array substrate of a lower illuminating type and a transmissive display device.
- the first electrode 41 and the second electrode 43 are respectively a cathode and an anode, or the first electrode 41 and the second electrode 43 are an anode and a cathode, respectively.
- the first electrode 41 is an anode
- the corresponding second electrode 43 is a cathode
- the first electrode 41 is a cathode
- the corresponding second electrode 43 is an anode.
- the first electrode 41 of the thin film transistor 30 and the organic light emitting diode 40 is disposed on the organic light emitting diode.
- the light is prevented from passing through the first electrode 41 and the thin film transistor 30 when propagating in the OLED substrate, and only the substrate 10 is disposed in the transparent region of the OLED array substrate.
- the filling layer 50, the light emitted by the organic electroluminescent layer 42 can be emitted only after passing through the filling layer 50 and the substrate 10, thereby improving the emission of the luminescent layer. The light out of the effect.
- the absolute value of the refractive index difference between the filling layer 50 and the substrate 10 is within a set range such that the refractive index of the filling layer 50 is approximately equal to the refractive index of the substrate 10, reducing the light in the filling layer 50 and the substrate 10.
- the reflection between the contact surfaces ensures that more light is refracted on the contact surface, so that more light can be emitted, which further improves the display effect of the display device.
- the substrate 10 may be a substrate made of a common transparent material such as glass, quartz, sapphire, or resin.
- the organic light emitting diode 40 includes the second electrode 43 , the first electrode 41 , and the second electrode 43 and the first
- the organic electroluminescent layer 42 between the electrodes 41, the light emitted from the organic electroluminescent layer 42 passes through the filling layer 50 and the substrate 10 in order, and is emitted from the light emitting surface of the substrate 10.
- the display device provided by the embodiment reduces the type of the medium through which the light propagates, and improves the light-transmitting effect of the light emitted from the light-emitting layer.
- the filling layer 50 which is similar in refractive index to the substrate 10, further increases the transmittance of light, thereby improving the display effect of the display device.
- the absolute value of the refractive index difference between the filling layer 50 and the substrate 10 is set in the range of 0 to 0.3.
- the refractive index of the glass substrate is 1.5.
- the refractive index of the filling layer 50 is between 1.2 and 1.8, and the refractive index thereof may be, for example, 1.2, 1.3, 1.4, 1.45. Any value between 1.5 and 1.8, such as 1.5, 1.55, 1.6, 1.7 or 1.8.
- the filling layer 50 satisfying the above-described setting range can be made of different materials.
- the filling layer 50 may be any one of propylene diglycol carbonate, polymethyl methacrylate or polycarbonate.
- propylene diglycol carbonate abbreviated as CR-39
- Plexiglass abbreviated as PMMA, namely polymethyl methacrylate
- PMMA namely polymethyl methacrylate
- Polycarbonate abbreviated as PC
- the refractive indices of the above materials are similar to those of the substrate 10, thereby ensuring that more light can be emitted from the substrate 10, improving the display effect of the display device.
- the thin film transistor may include an active layer 31, a gate insulating layer 32 disposed on the active layer 31, a gate electrode 33 disposed on the gate insulating layer 32, and an intermediate insulating layer 34 disposed on the gate electrode 33.
- the source and drain electrodes 35 are disposed on the intermediate insulating layer 34 as shown in FIG.
- the thin film transistor 30 in the above embodiment may also adopt a different structure. As can be seen from FIG. 1, the thin film transistor 30 is integrally disposed in the opaque region of the display device, and in the light transmitting region, the light is emitted. There is only a fill layer 50 between the electroluminescent layer 42 and the substrate 10.
- the OLED array substrate provided by the embodiment of the present invention can reduce the type of the medium that the light emitted by the luminescent layer passes before exiting the array substrate, improve the transmittance of the light, and further improve the display device.
- the display effect can reduce the type of the medium that the light emitted by the luminescent layer passes before exiting the array substrate, improve the transmittance of the light, and further improve the display device. The display effect.
- the OLED array substrate further includes a buffer layer 20 disposed between the substrate 10 and the thin film transistor 30.
- the OLED array substrate further includes a passivation layer 36 and a flat layer 37 disposed between the source and drain electrodes 35 and the pixel defining layer 38.
- the formation of the pixel definition layer 38 at the time of fabrication is facilitated by the planarization layer 37.
- the thin film transistor 30 is disposed between the organic light emitting diode 40 and the substrate 10 in the above embodiment, it should be understood that in another embodiment, the organic light emitting diode 40 may be disposed between the thin film transistor 30 and the substrate 10.
- the embodiment of the invention further provides a method for preparing the above organic light emitting diode array substrate.
- the method includes the following steps:
- the organic light emitting diode comprises a first electrode, an organic electroluminescent layer and a second electrode which are sequentially stacked in a direction away from the substrate,
- the first electrode is located in a second region of the substrate and disposed above the thin film transistor, and the organic electroluminescent layer and the second electrode extend to a first region of the substrate.
- the first region and the second region of the substrate respectively correspond to a light transmissive region and an opaque region of the OLED array substrate.
- the thin film transistor in the opaque region of the OLED array substrate, only the filling layer, the organic electroluminescent layer and the second electrode are disposed in the light transmitting region, thereby reducing the luminescent layer
- the type of medium that the emitted light travels through in the array substrate increases the transmittance of the light.
- the filling layer similar to the refractive index of the substrate further improves the transmittance of the light, thereby improving the display effect of the display device.
- the method further includes forming a passivation layer and a planarization layer on the thin film transistor.
- a method for fabricating an organic light emitting diode array substrate includes:
- Step 1 forming a buffer layer in a region of the substrate corresponding to the opaque region of the OLED array substrate;
- Step two forming an active layer on the buffer layer
- Step 3 forming a gate insulating layer on the active layer
- Step 4 forming a gate on the gate insulating layer
- Step 5 forming an intermediate insulating layer on the gate
- Step 6 forming a source and a drain on the intermediate insulating layer
- Step 7 sequentially forming a stacked passivation layer and a flat layer on the source and the drain;
- Step 8 forming a first electrode on the flat layer
- Step 9 forming a pixel defining layer on the first electrode
- Step 10 forming a filling layer in a region of the substrate corresponding to the light-transmitting region of the OLED array substrate;
- Step 11 forming an organic electroluminescent layer on the pixel defining layer and the filling layer;
- Step 12 forming a second electrode on the organic electroluminescent layer.
- an embodiment of the present invention further provides a display device including the organic light emitting diode array substrate according to any one of the above.
- the display device may be: an OLED panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like, or any product or component having a display function.
- the thin film transistor is disposed in the opaque region of the OLED array substrate, and only the filling layer, the organic electroluminescent layer and the second electrode are disposed in the transparent region, thereby reducing the passage of light.
- the filling layer similar to the refractive index of the substrate is used to further increase the transmittance of the light, thereby improving the display effect of the display device.
- An organic light emitting diode array substrate comprising: a substrate, a thin film transistor, an organic light emitting diode, and a filling layer disposed above the substrate, the organic light emitting diode including a first electrode, a second electrode, and a setting An organic electroluminescent layer between the first electrode and the second electrode, wherein the thin film transistor is disposed in an opaque region of the OLED array substrate; In a light-transmissive region of the array substrate, the substrate, the filling layer, and the organic electroluminescent layer of the organic light-emitting diode are sequentially disposed adjacent to each other.
- the organic light emitting diode array substrate wherein the first electrode of the organic light emitting diode is located in an opaque region of the OLED array substrate and the An electrode is disposed above the thin film transistor, and the organic electroluminescent layer and the second electrode of the organic light emitting diode are disposed in the light transmissive region and the opaque region.
- the organic light emitting diode array substrate according to any one of (1) to (3), wherein the setting range is 0 to 0.3.
- the organic light emitting diode array substrate according to any one of (1) to (4) wherein the substrate is a glass substrate, and the filling layer is propylene diglycol carbonate or poly Any of methyl acrylate or polycarbonate.
- the OLED array substrate of any one of (1) to (5) further comprising a pixel defining layer disposed between the thin film transistor and the organic electroluminescent layer.
- the organic light emitting diode array substrate according to any one of (1) to (8), further comprising a buffer layer provided between the substrate and the thin film transistor.
- a portion of the organic electroluminescent layer of the organic light emitting diode is directly formed on the filling layer.
- a display device comprising the organic light emitting diode array substrate according to any one of (1) to (9).
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Abstract
一种有机发光二极管阵列基板及其制备方法、显示装置,该阵列基板包括:衬底(10),设置在衬底(10)上方的薄膜晶体管(30)、有机发光二极管(40)和填充层(50),有机发光二极管(40)包括第一电极(41)、第二电极(43)以及设置在第一电极(41)和第二电极(43)之间的有机电致发光层(42),其中,在有机发光二极管阵列基板的一个透光区域中,衬底(10)、填充层(50)和有机发光二极管(40)的有机电致发光层(42)依次邻接设置。
Description
本发明实施例涉及到有机发光二极管阵列基板及其制备方法、显示装置。
OLED,即有机发光二极管(Organic Light-Emitting Diode),又称为有机电激光显示(Organic Electroluminesence Display,OELD)。OLED具有自发光的特性,采用非常薄的有机材料涂层和玻璃基板,当电流通过时,有机材料就会发光,而且OLED显示屏幕可视角度大,并且能够显著节省电能,OLED屏幕具备了许多LCD不可比拟的优势。
一般OLED组件的光都是由下基板射出的,也就是下发光。而所谓的上发光(top emission)是指光不经过下基板而是从与其相反的上侧射出。如果基板之上为高反射的第一电极,而第二电极是透光的,则光是从表面的第二电极发出的。若第一电极材料使用传统的透光ITO并搭配透光第二电极,则组件的两面都会发光,也就是所谓的穿透式组件(transparent device)。
发明内容
本发明实施例提供了一种有机发光二极管阵列基板,包括:衬底,设置在所述衬底上方的薄膜晶体管、有机发光二极管和填充层,所述有机发光二极管包括第一电极、第二电极以及设置在所述第一电极和所述第二电极之间的有机电致发光层,其中,所述薄膜晶体管设置在在所述有机发光二极管阵列基板的一不透光区域;在所述有机发光二极管阵列基板的一透光区域中,所述衬底、所述填充层和所述有机发光二极管的有机电致发光层依次邻接设置。
本发明另一实施例提供了一种有机发光二极管阵列基板的制备方法,所述有机发光二极管阵列基板包括薄膜晶体管和有机发光二极管,所述有机发光二极管包括第一电极、第二电极以及位于所述第一电极和第二电极之间的有机电致发光层,所述方法包括:
在衬底的第一区域形成填充层,所述填充层邻接所述衬底;以及
在所述填充层上直接形成所述有机发光二极管的有机电致发光层的一部分。
本发明又一实施例提供了一种显示装置,包括上述有机发光二极管阵列基板。
为了更清楚地说明本公开实施例的技术方案,下面将对实施例或相关技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅涉及本公开的一些实施例,并非对本公开的限制。
图1为本发明实施例提供的有机发光二极管阵列基板的结构示意图。
下面将结合附图,对本公开实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本公开一部分实施例,而不是全部的实施例。基于本公开中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本公开保护的范围。
申请人发现:主动式OLED发光组件中每个像素是由薄膜晶体管来控制的,每个像素中设置有不透光区域和透光区域。在测试发光组件的透过率时根据国标,透过率定义为:其中,不透光区域的面积为A1,透光区域的面积为A2,且透光区域的透过率为Ts1;因此,如果Ts1提高,整个组件的透过率Ts就会提高。
为了提高有机发光二极管阵列基板的显示效果,本发明实施例提供了一种有机发光二极管阵列基板及其制备方法、显示装置,在本发明实施例的技术方案中,通过在有机发光二极管阵列基板的透光区域中,形成衬底、填充层和有机电致发光层依次邻接的结构,改善了发光层发出的光线的透出效果。此外,填充层采用与衬底折射率相近似的材料,从而进一步改善了发光层发出的光线的在透光区域的透过率,提高了显示装置的显示效果。
图1示出了本发明实施例提供的有机发光二极管阵列基板的截面结构示
意图。
如图1所示,本发明实施例提供的有机发光二极管阵列基板,包括:衬底10,设置在衬底10上并沿远离衬底10方向依次层叠设置的薄膜晶体管30及有机发光二极管40,其中,薄膜晶体管30设置于所述有机发光二极管阵列基板的不透光区域。有机发光二极管40包括沿远离衬底10方向依次层叠设置的第一电极41、有机电致发光层42及第二电极43。第一电极41位于有机发光二极管阵列基板的不透光区域且设置于薄膜晶体管30的上方。有机电致发光层42及第二电极43延伸至有机发光二极管阵列基板的透光区域,且有机电致发光层42及衬底10之间设置有位于所述透光区域内的填充层50,且填充层50上方邻接所述有机电致发光层42且下方邻接所述衬底10。填充层50与衬底10的折射率差值的绝对值在设定范围内。薄膜晶体管30及第一电极41形成为在填充层50的同一侧层叠,且薄膜晶体管30与第一电极41之后的厚度不超过填充层50的厚度。在一个示例中,填充层50与薄膜晶体管30及第一电极41相邻。在上述技术方案中,薄膜晶体管30设置在有机发光二极管阵列基板的不透光区域,在透光区域内仅设置了填充层50、有机电致发光层42及第二电极43,减少了光线传播时经过的介质的种类,进而改善了发光层发出的光线的透出效果。此外,采用与衬底10折射率相近似的填充层50更进一步的提高了光线的透射率,从而提高了显示装置的显示效果。
在上述实施例中的阵列基板还包括设置在薄膜晶体管30与有机电致发光层42之间的像素定义层38。此外,该有机发光二极管阵列基板可以为下发光式及穿透式的显示装置的阵列基板。根据有机发光二极管阵列基板的设计要求,第一电极41及第二电极43分别为阴极和阳极,或者第一电极41及第二电极43分别为阳极和阴极。如第一电极41为阳极,相应的第二电极43为阴极;或者第一电极41为阴极,相应的第二电极43为阳极。有机发光二极管40的有机电致发光层42发出的全部或部分光线经衬底10射出,在上述实施例中,通过将薄膜晶体管30及有机发光二极管40中的第一电极41设置在有机发光二极管阵列基板的不透光区域内,从而避免了光线在有机发光二极管阵列基板内传播时穿过第一电极41及薄膜晶体管30,在有机发光二极管阵列基板的透光区域内仅有衬底10及填充层50,有机电致发光层42发射出的光线仅需经过填充层50以及衬底10后即可射出,改善了发光层发
出的光线的透出效果。此外,填充层50与衬底10的折射率差值的绝对值在设定范围内,使得填充层50的折射率近似等于衬底10的折射率,减少了光线在填充层50与衬底10之间接触面上的反射,保证了更多的光线在接触面上发生折射,从而使得更多的光线能够射出,进一步提高了显示装置的显示效果。
其中的衬底10可以为玻璃、石英、蓝宝石、树脂等常见的透明材料制作的基板,其中的有机发光二极管40包括上述第二电极43、第一电极41及设置在第二电极43和第一电极41之间的有机电致发光层42,有机电致发光层42射出的光线依次经过填充层50及衬底10后从衬底10的出光面射出。
通过上述描述可以看出,本实施例提供的显示装置采用的结构减少了光线传播时经过的介质的种类,改善了发光层发出的光线的透出效果。此外,采用与衬底10折射率相近似的填充层50更进一步的提高了光线的透射率,从而提高了显示装置的显示效果。
填充层50与衬底10的折射率差值的绝对值的设定范围为0~0.3。例如,在衬底10为玻璃基板时,玻璃基板的折射率为1.5,此时,该填充层50的折射率介于1.2~1.8之间,其折射率例如可以为1.2、1.3、1.4、1.45、1.5、1.55、1.6、1.7或1.8等任意介于1.2~1.8之间的数值。
满足上述设定范围的填充层50可以选用不同的材料来制作。例如,在衬底10为玻璃基板时,填充层50可以为丙烯基二甘醇碳酸酯、聚甲基丙烯酸甲酯或聚碳酸酯中的任一种。其中,丙烯基二甘醇碳酸酯,简称CR-39,其物理特性有:折射率1.498,透过率92%。有机玻璃,简称PMMA,即聚甲基丙烯酸甲酯,其物理特性有:折射率1.49,透过率92%。聚碳酸酯,简称PC,其物理特性有:折射率1.585,透过率90%。上述几种材料的折射率均与衬底10的折射率相近似,从而保证了能够有更多的光线从衬底10上射出,提高了显示装置的显示效果。
例如,该薄膜晶体管可以包括有源层31,设置在有源层31上的栅极绝缘层32,设置在栅极绝缘层32上的栅极33,设置在栅极33上的中间绝缘层34,设置在所述中间绝缘层34上的源极和漏极35,如图1所示。应理解,上述实施例中的薄膜晶体管30也可采用不同的结构。从图1中可以看出,薄膜晶体管30整体设置在显示装置的不透光区域内,在透光区域内,发光的有
机电致发光层42与衬底10之间仅有填充层50。与现有技术相比,本申请实施例提供的有机发光二极管阵列基板能够减少发光层发出的光线在射出阵列基板之前穿过的介质的种类,提高了光线的穿透率,进而提高了显示装置的显示效果。
此外,为了提高整个装置的安全性,该有机发光二极管阵列基板还包括设置在衬底10与薄膜晶体管30之间的缓冲层20。
同时,该有机发光二极管阵列基板还包括设置在所述源极和漏极35及所述像素定义层38之间的钝化层36及平坦层37。通过平坦层37方便了在制作时形成像素定义层38。
尽管在上述实施例中,薄膜晶体管30设置在有机发光二极管40与衬底10之间,但应理解在另一实施例中,有机发光二极管40可设置在薄膜晶体管30与衬底10之间。
本发明实施例还提供了一种上述有机发光二极管阵列基板的制备方法。该方法包括以下步骤:
在所述衬底的第一区域形成填充层,且所述填充层与所述衬底的折射率差值的绝对值在设定范围内;
在衬底的第二区域形成薄膜晶体管;
在所述薄膜晶体管和所述填充层上形成有机发光二极管,其中,所述有机发光二极管包括沿远离所述衬底方向依次层叠设置的第一电极、有机电致发光层及第二电极,所述第一电极位于所述衬底的第二区域且设置于所述薄膜晶体管的上方,所述有机电致发光层及所述第二电极延伸至所述衬底的第一区域。这里,所述衬底的所述第一区域和所述第二区域分别对应于所述有机发光二极管阵列基板的一透光区域和一不透光区域。
在上述制备方法中,通过将薄膜晶体管设置在有机发光二极管阵列基板的不透光区域,在其透光区域内仅设置了填充层、有机电致发光层及第二电极,因此减少了发光层发出的光线在阵列基板中传播时经过的介质的种类,提高了光线的透射率。此外,采用与衬底折射率相近似的填充层更进一步的提高了光线的透射率,从而提高了显示装置的显示效果。
在所述薄膜晶体管上形成有机发光二极管之前,还可以包括在所述薄膜晶体管上形成钝化层及平坦层。
在一个实施例中,有机发光二极管阵列基板的制备方法包括:
步骤一:在衬底的对应于所述有机发光二极管阵列基板的不透光区域的区域形成缓冲层;
步骤二:在缓冲层上形成有源层;
步骤三:在有源层上形成栅极绝缘层;
步骤四:在栅极绝缘层上形成栅极;
步骤五:在栅极上形成中间绝缘层;
步骤六:在中间绝缘层上形成源极和漏极;
步骤七:在源极和漏极上依次形成层叠的钝化层及平坦层;
步骤八:在平坦层上形成第一电极;
步骤九:在第一电极上形成像素定义层;
步骤十:在衬底的对应于所述有机发光二极管阵列基板的透光区域的区域形成填充层;
步骤十一:在像素定义层及填充层上形成有机电致发光层;
步骤十二:在有机电致发光层上形成第二电极。
此外,本发明实施例还提供了一种显示装置,该显示装置包括上述任一种所述的有机发光二极管阵列基板。所述显示装置可以为:OLED面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
在上述实施例中,薄膜晶体管设置在有机发光二极管阵列基板的不透光区域,在其透光区域内仅设置了填充层、有机电致发光层及第二电极,减少了光线传播时经过的介质的种类,同时,采用与衬底折射率相近似的填充层更进一步的提高了光线的透射率,从而提高了显示装置的显示效果。
根据上述描述,根据本公开的实施例至少可以提供以下结构和方法:
(1)、一种有机发光二极管阵列基板,包括:衬底,设置在所述衬底上方的薄膜晶体管、有机发光二极管和填充层,所述有机发光二极管包括第一电极、第二电极以及设置在所述第一电极和所述第二电极之间的有机电致发光层,其中,所述薄膜晶体管设置在在所述有机发光二极管阵列基板的一不透光区域;在所述有机发光二极管阵列基板的一透光区域中,所述衬底、所述填充层和所述有机发光二极管的有机电致发光层依次邻接设置。
(2)、如(1)所述的有机发光二极管阵列基板,且所述填充层与所述衬底的折射率差值的绝对值在设定范围内。
(3)、如(1)或(2)所述的有机发光二极管阵列基板,其中,所述有机发光二极管的第一电极位于所述有机发光二极管阵列基板的不透光区域内且所述第一电极设置于所述薄膜晶体管的上方,所述有机发光二极管的所述有机电致发光层及所述第二电极设置在所述透光区域和所述不透光区域内。
(4)、如(1)至(3)所述的有机发光二极管阵列基板,其中,所述设定范围为0~0.3。
(5)、如(1)至(4)中任一项所述的有机发光二极管阵列基板,其中,所述衬底为玻璃基板,所述填充层为丙烯基二甘醇碳酸酯、聚甲基丙烯酸甲酯或聚碳酸酯中的任一种。
(6)、如(1)至(5)中任一项所述的有机发光二极管阵列基板,还包括设置在所述薄膜晶体管与所述有机电致发光层之间的像素定义层。
(7)、如(1)至(6)中任一项所述的有机发光二极管阵列基板,其中,所述薄膜晶体管包括有源层,设置在所述有源层上的栅极绝缘层,设置在所述栅极绝缘层上的栅极,设置在所述栅极上的中间绝缘层,设置在所述中间绝缘层上的源极和漏极。
(8)、如(6)或(7)所述的有机发光二极管阵列基板,还包括设置在所述源极和漏极及所述像素定义层之间的钝化层及平坦层。
(9)、如(1)至(8)中任一项所述的有机发光二极管阵列基板,其中,还包括设置在所述衬底与所述薄膜晶体管之间的缓冲层。
(10)、一种有机发光二极管阵列基板的制备方法,所述有机发光二极管阵列基板包括薄膜晶体管和有机发光二极管,所述有机发光二极管包括第一电极、第二电极以及位于所述第一电极和第二电极之间的有机电致发光层,所述方法包括:
在衬底的第一区域形成填充层,所述填充层邻接所述衬底;以及
在所述填充层上直接形成所述有机发光二极管的有机电致发光层的一部分。
(11)、如(10)所述的有机发光二极管阵列基板的制备方法,其中所述填充层与所述衬底的折射率差值的绝对值在设定范围内。
(12)、如(10)或(11)所述的有机发光二极管阵列基板的制备方法,还包括:
在所述衬底的不同于所述第一区域的第二区域形成薄膜晶体管;
在所述薄膜晶体管上方形成所述有机发光二极管的所述第一电极;
在所述有机发光二极管的第一电极以及所述填充层上形成所述有机发光二极管的有机电致发光层及所述第二电极的至少一部分。
(13)、如(12)所述的有机发光二极管阵列基板的制备方法,还包括在所述薄膜晶体管上方形成所述有机发光二极管的所述第一电极之前,在所述薄膜晶体管上形成钝化层及平坦层。
(14)、如(10)至(13)中任一项所述的有机发光二极管阵列基板的制备方法,其中所述衬底的所述第一区域和所述第二区域分别对应于所述有机发光二极管阵列基板的一透光区域和一不透光区域。
(15)、一种显示装置,包括(1)至(9)中任一项所述的有机发光二极管阵列基板。
虽然上文中已经用一般性说明及具体实施方式,对本公开作了详尽的描述,但在本公开基础上,可以对之作一些修改或改进,这对本领域技术人员而言是显而易见的。因此,在不偏离本公开精神的基础上所做的这些修改或改进,均属于本公开要求保护的范围。
本申请要求于2014年11月26日递交的中国专利申请第201410692271.8号的优先权,在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
Claims (15)
- 一种有机发光二极管阵列基板,包括:衬底,设置在所述衬底上方的薄膜晶体管、有机发光二极管和填充层,所述有机发光二极管包括第一电极、第二电极以及设置在所述第一电极和所述第二电极之间的有机电致发光层,其中,所述薄膜晶体管设置在在所述有机发光二极管阵列基板的一不透光区域;在所述有机发光二极管阵列基板的一透光区域中,所述衬底、所述填充层和所述有机发光二极管的有机电致发光层依次邻接设置。
- 如权利要求1所述的有机发光二极管阵列基板,且所述填充层与所述衬底的折射率差值的绝对值在设定范围内。
- 如权利要求1或2所述的有机发光二极管阵列基板,其中,所述有机发光二极管的第一电极位于所述有机发光二极管阵列基板的不透光区域内且所述第一电极设置于所述薄膜晶体管的上方,所述有机发光二极管的所述有机电致发光层及所述第二电极设置在所述透光区域和所述不透光区域内。
- 如权利要求1至3所述的有机发光二极管阵列基板,其中,所述设定范围为0~0.3。
- 如权利要求1至4中任一项所述的有机发光二极管阵列基板,其中,所述衬底为玻璃基板,所述填充层为丙烯基二甘醇碳酸酯、聚甲基丙烯酸甲酯或聚碳酸酯中的任一种。
- 如权利要求1至5中任一项所述的有机发光二极管阵列基板,还包括设置在所述薄膜晶体管与所述有机电致发光层之间的像素定义层。
- 如权利要求1至6中任一项所述的有机发光二极管阵列基板,其中,所述薄膜晶体管包括有源层,设置在所述有源层上的栅极绝缘层,设置在所述栅极绝缘层上的栅极,设置在所述栅极上的中间绝缘层,设置在所述中间绝缘层上的源极和漏极。
- 如权利要求6或7所述的有机发光二极管阵列基板,还包括设置在所述源极和漏极及所述像素定义层之间的钝化层及平坦层。
- 如权利要求1至8中任一项所述的有机发光二极管阵列基板,其中,还包括设置在所述衬底与所述薄膜晶体管之间的缓冲层。
- 一种有机发光二极管阵列基板的制备方法,所述有机发光二极管阵 列基板包括薄膜晶体管和有机发光二极管,所述有机发光二极管包括第一电极、第二电极以及位于所述第一电极和第二电极之间的有机电致发光层,所述方法包括:在衬底的第一区域形成填充层,所述填充层邻接所述衬底;以及在所述填充层上直接形成所述有机发光二极管的有机电致发光层的一部分。
- 如权利要求10所述的有机发光二极管阵列基板的制备方法,其中所述填充层与所述衬底的折射率差值的绝对值在设定范围内。
- 如权利要求10或11所述的有机发光二极管阵列基板的制备方法,还包括:在所述衬底的不同于所述第一区域的第二区域形成薄膜晶体管;在所述薄膜晶体管上方形成所述有机发光二极管的所述第一电极;在所述有机发光二极管的第一电极以及所述填充层上形成所述有机发光二极管的有机电致发光层及所述第二电极的至少一部分。
- 如权利要求12所述的有机发光二极管阵列基板的制备方法,还包括在所述薄膜晶体管上方形成所述有机发光二极管的所述第一电极之前,在所述薄膜晶体管上形成钝化层及平坦层。
- 如权利要求10至13中任一项所述的有机发光二极管阵列基板的制备方法,其中所述衬底的所述第一区域和所述第二区域分别对应于所述有机发光二极管阵列基板的一透光区域和一不透光区域。
- 一种显示装置,包括权利要求1至9中任一项所述的有机发光二极管阵列基板。
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