WO2015184712A1 - 一种有机发光显示装置及其制造方法 - Google Patents
一种有机发光显示装置及其制造方法 Download PDFInfo
- Publication number
- WO2015184712A1 WO2015184712A1 PCT/CN2014/087858 CN2014087858W WO2015184712A1 WO 2015184712 A1 WO2015184712 A1 WO 2015184712A1 CN 2014087858 W CN2014087858 W CN 2014087858W WO 2015184712 A1 WO2015184712 A1 WO 2015184712A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- refractive index
- pixel defining
- light
- high refractive
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 15
- 238000000059 patterning Methods 0.000 claims description 8
- 239000010408 film Substances 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 5
- 229920000178 Acrylic resin Polymers 0.000 claims description 5
- 239000004925 Acrylic resin Substances 0.000 claims description 5
- -1 acryl Chemical group 0.000 claims description 5
- 239000005011 phenolic resin Substances 0.000 claims description 5
- 229920001568 phenolic resin Polymers 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 239000009719 polyimide resin Substances 0.000 claims description 5
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 255
- 239000011521 glass Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/878—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/856—Arrangements for extracting light from the devices comprising reflective means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
Definitions
- the present disclosure relates to the field of display manufacturing, and in particular to an organic light emitting display device and a method of fabricating the same.
- OLED Organic Electroluminescence Display
- AMOLED Active Matrix/Organic Light Emitting Diode
- the light emitted by the light-emitting layer is transmitted through the layers of the OLED device and transmitted to the outside, and the light is refracted from one dielectric material to another, for example, a partial structure diagram of the OLED device shown in FIG.
- the OLED device includes a substrate 101, an electrode 102 disposed on the substrate 101, and a pixel defining layer 103, wherein the pixel defining layer 103 has a plurality of openings on the substrate 101, the opening exposing the electrode 102 to form a predetermined pattern, and at the opening A light emitting layer 105 is formed.
- the light emitted by the light-emitting layer 105 is transmitted to the pixel defining layer 103, since the refractive index existing between the pixel defining layer 103 and the air is largely different, the light is caused to occur at the interface between the pixel defining layer 103 and the air. The reflection limits the light within the pixel definition layer 103 and cannot be used for display.
- the optical loss at the interface between the ITO and the glass accounts for about 50%, and the interface between the glass and the air
- the optical loss accounts for about 30%, so that even if the internal quantum efficiency reaches 100%, the output light efficiency can only reach 20%. How to increase the output efficiency of light becomes the key to improve the external quantum efficiency of OLED.
- an object of the technical solution of the present disclosure is to provide an organic light emitting display device and a method of fabricating the same for improving light extraction efficiency of an organic light emitting display device.
- the present disclosure provides an organic light emitting display device including an anode layer, a cathode layer, and a pixel defining layer and a light emitting layer disposed between the anode layer and the cathode layer, wherein the pixel defining layer has an opening, and the light emitting layer is disposed at the In the opening, a high refractive index insulating layer having a refractive index greater than a refractive index of the pixel defining layer is disposed between the light emitting layer and the pixel defining layer.
- the organic light emitting display device wherein the pixel defining layer is made of polyimide, acryl or phenolic resin, and the high refractive index insulating layer is made of Ti 2 O 3 and TiO. 2 or ZnSe.
- the organic light emitting display device wherein the high refractive index insulating layer is formed in a curved curved structure at the opening.
- the organic light emitting display device wherein an angle between the curved arc and a plane of the anode layer is between 20 degrees and 45 degrees.
- the organic light emitting display device wherein the high refractive index insulating layer has a thickness of 10 to 1000 nm.
- the organic light emitting display device wherein the high refractive index insulating layer is disposed adjacent to a surface of the light emitting layer with a plurality of micro-planes at different inclination angles for transmission to the high refraction
- the angle of the light of the rate insulating layer is refracted such that the refracted light rays are totally reflected when transmitted to the interface of the high refractive index insulating layer and the pixel defining layer.
- the organic light emitting display device further includes a thin film transistor array substrate disposed on a side of the anode layer away from the light emitting layer.
- the organic light emitting display device further includes a color filter substrate disposed on a side of the cathode layer away from the light emitting layer.
- the present disclosure also provides a method of fabricating the organic light emitting display device, comprising sequentially forming the anode layer and the pixel defining layer, and further comprising the step of forming the high refractive index insulating layer on the pixel defining layer.
- the manufacturing method wherein the forming the high refractive index insulating layer on the pixel defining layer comprises:
- An opening is formed on the formed film layer at the opening position of the pixel defining layer by a patterning process, and the anode layer is exposed to form a high refractive index insulating layer.
- the light emitted by the light emitting layer toward the pixel defining layer can be in the high refractive index insulating layer and Total reflection is generated at the boundary of the pixel defining layer to achieve an effect of improving the light extraction efficiency of the organic light emitting display device.
- FIG. 1 is a partial structural view showing a prior art OLED light emitting device
- FIG. 2 is a partial structural schematic view of an organic light emitting display device according to a first embodiment of the present disclosure
- Figure 3 shows a schematic diagram of the principle of total reflection
- FIG. 4 is a partial schematic structural view of an organic light emitting display device according to a second embodiment of the present disclosure.
- 5a to 5d are schematic diagrams showing the steps of a method of manufacturing the organic light-emitting display device according to the first embodiment of the present disclosure.
- the organic light emitting display device of the present embodiment is an OLED light emitting device, comprising a substrate 1, an anode layer 2 disposed on the substrate 1, and a pixel defining layer 3, wherein the pixel defining layer 3 has an opening 4 for making A portion of the anode layer 2 is exposed, and the light-emitting layer 5 is disposed in the opening, which is not shown in the drawings, but it can be understood by those skilled in the art that in the OLED light-emitting device, the light-emitting layer and the anode are separated by the opening 4
- the layer 2 is provided with a transparent cathode layer in parallel, and the organic material of the light-emitting layer 5 emits light under the pressure difference between the anode layer 2 and the cathode layer provided.
- a high refractive index insulating layer having a refractive index greater than a refractive index of the pixel defining layer 3 is disposed between the light emitting layer 5 and the pixel defining layer 3. 6.
- the pixel defining layer 3 is covered such that the light emitting layer 5 emits a pixel defining layer 3 transmitted light can generate total reflection at the interface of the high refractive index insulating layer 6 and the pixel defining layer 3, so that light incident to the boundary of the high refractive index insulating layer 6 and the pixel defining layer 3 and greater than the total reflection angle occurs.
- Reflecting, emitting toward the cathode layer, and light less than the total reflection angle is refracted into the pixel defining layer 3, but the light transmitted in the pixel defining layer 3 is transmitted to the pixel defining layer 3 and high refraction after one or more reflections.
- the interface of the insulating layer 6 is rateed, as shown in FIG. 2, since the refractive index of the pixel defining layer 3 is smaller than the refractive index of the high refractive index insulating layer 6, light is transmitted from the light-diffusing medium to the optically dense medium, and thus is not defined in the pixel. Total reflection occurs in layer 3, so that most of the light is transmitted to the cathode layer, and the light extraction efficiency of the organic light-emitting display device of the prior art is greatly improved.
- the refractive index is not much different, and substantially no total reflection occurs between the light-emitting layer 5 and the pixel defining layer 3.
- the present disclosure causes total reflection of the interface between the high refractive index insulating layer 6 and the pixel defining layer 3 by providing a high refractive index insulating layer 6 between the light emitting layer 5 and the pixel defining layer 3, which is transmitted to the pixel defining layer 3. Part of the light is projected to the cathode layer in a totally reflective manner.
- the organic light-emitting display device of the present embodiment has a refractive index greater than that between the light-emitting layer 5 and the pixel defining layer 3, because the refractive index of the optically dense medium is larger than the refractive index of the light-diffusing medium.
- the high refractive index insulating layer 6 of the refractive index of the pixel defining layer 3 causes the incident angle incident to the interface between the pixel defining layer 3 and the high refractive index insulating layer 6 to be greater than or equal to the total reflection angle, and total reflection occurs, changing The transmission direction is emitted toward the cathode layer for display; and for the light having an incident angle smaller than the total reflection angle, it is refracted at the interface and transmitted to the inside of the pixel defining layer 3, but The light transmitted inside the pixel definition layer 3 is reflected one or more times, and finally some light is reflected and transmitted to the interface of the pixel defining layer 3 and the high refractive index insulating layer 6, as shown in FIG. 2, due to pixel definition.
- the refractive index of the layer 3 is smaller than the refractive index of the high refractive index insulating layer 6, and light is transmitted from the light-diffusing medium to the optically dense medium, so that total reflection is not generated in the pixel defining layer 3, and part of the light is transmitted to the cathode layer.
- the pixel defining layer 3 is made of polyimide, acryl or phenolic resin
- the high refractive index insulating layer 6 is made of Ti 2 O 3 , TiO 2 or ZnSe.
- the high refractive index insulating layer 6 is formed in a curved arc structure at the opening 4 such that the high refractive index insulating layer 6 is adjacent to the light emitting layer 5.
- the surface and the surface adjacent to the pixel defining layer 3 are each formed into a curved arc, and the incident from the light emitting layer 5 is made by the arrangement of the structure.
- Most of the light of the high refractive index insulating layer 6 is totally reflected at the interface between the high refractive index insulating layer 6 and the pixel defining layer 3, further improving the light output efficiency of the organic light emitting display device.
- the surface of the high refractive index insulating layer 6 adjacent to the luminescent layer 5 has a surface roughness to form a plurality of mutually different inclination angles.
- the micro-plane, the inclination angle of the micro-planes at different positions is set according to the incident angle of the light emitted by the light-emitting layer 5 at the position, through which the light emitted by the light-emitting layer 5 is incident on the high-refractive-index insulating layer 6 At the time of the surface, the incident light is refracted so that the angle of the refracted light is greater than or equal to the full emission angle to form total reflection in the high refractive index insulating layer 6, thereby further improving the light output efficiency of the organic light-emitting display device.
- the bending curvature of the pixel defining layer 3 can be 20 to 50 degrees, the total reflection angle of the glass and the space is 42 to 44 degrees, and when the bending curvature of the pixel defining layer 3 is greater than 45 degrees, it is transmitted to the pixel defining layer. 3 internal light will be totally reflected in the pixel definition layer 3, so optionally,
- the angle between the curvature of the high refractive index insulating layer 6 and the plane of the anode layer 2 is between 20 degrees and 45 degrees, which is less than the total reflection angle of light transmission between the glass and the air.
- the high refractive index insulating layer 6 has a thickness of 10 to 1000 nm
- the pixel defining layer 3 has a thickness of 1 to 3 ⁇ m.
- the anode layer 2 is usually made of an indium tin oxide ITO material, and the cathode layer is made of a transparent metal material.
- the organic light-emitting display device of the above embodiment by providing a high-refractive-index insulating layer 6 having a refractive index greater than that of the pixel defining layer 3 between the light-emitting layer 5 and the pixel defining layer 3, the light-emitting layer 5 is emitted toward The light transmitted by the pixel defining layer 3 can generate total reflection at the boundary between the high refractive index insulating layer 6 and the pixel defining layer 3, thereby achieving an effect of improving the light extraction efficiency of the organic light emitting display device.
- the first embodiment described above relates to the structural description of the organic light emitting display device, and illustrates the basic configuration of the passive organic light emitting display device. Those skilled in the art should be able to understand the detailed structure of the passive organic light emitting display device, which will not be described in detail herein.
- the organic light emitting display device of the present disclosure can also be applied to an application of an active matrix organic light emitting diode (AMOLED) display, the AMOLED display including a thin film transistor array substrate disposed on a side of the anode layer away from the light emitting layer.
- FIG. 4 is a partial schematic structural diagram of an organic light emitting display device according to a second embodiment of the present disclosure.
- the organic light emitting display device includes:
- Substrate 1001 typically a glass material
- a gate 1005 disposed on the gate insulating layer 1004;
- the source and drain electrodes 1007 are disposed on both sides of the gate 1005, and the source and drain electrodes 1007 are disposed in the via holes of the insulating layer 1006, and are connected to the active layer 1003 through the via holes;
- a passivation layer 1008 disposed on the insulating layer 1006;
- planarization layer 1009 disposed on the passivation layer 1008;
- a pixel electrode 1010 disposed on the planarization layer 1009;
- a pixel on the pixel electrode 1010 defines a layer 1011 having an opening. A part of the pixel electrode 1010 is exposed, and the exposed portion of the pixel electrode 1010 is configured as a pixel unit of the display device.
- the pixel electrode 1010 is configured as an anode layer of an AMOLED display, and an opening portion above the pixel electrode 1010 is configured as a light-emitting layer 1013. It can be understood by those skilled in the art that a cathode layer is disposed above the light-emitting layer 1013 for The pixel electrode 1010 combines to illuminate the organic material in the light-emitting layer 1013. Further, when the AMOLED display is top-emitting, the cathode layer is further covered with a transparent package cover.
- a high refractive index insulating layer 1012 is disposed between the pixel defining layer 1011 and the light emitting layer 1013, and the high refractive index insulating layer 1012 has a higher refractive index than the pixel defining layer 1011.
- the refractive index covers the pixel defining layer 1011 such that the light emitted by the light emitting layer 1013 toward the pixel defining layer 1011 can generate total reflection at the boundary of the high refractive index insulating layer 1012 and the pixel defining layer 1011, and is incident to high refraction.
- the light larger than the total reflection angle is totally reflected and emitted toward the cathode layer, and the light smaller than the total reflection angle is refracted into the pixel defining layer 1011, but at the pixel defining layer 1011
- the light transmitted inside is transmitted to the interface of the pixel defining layer 1011 and the high refractive index insulating layer 1012 after one or more reflections, as shown in FIG. 2, since the refractive index of the pixel defining layer 1011 is smaller than that of the high refractive index insulating layer 1012.
- the refractive index the light is transmitted from the light-diffusing medium to the optically dense medium, so that no total reflection is generated in the pixel defining layer 1011, so that most of the light is transmitted to the cathode layer,
- the prior art organic light emitting display device light output efficiency is greatly improved.
- the pixel defining layer 1011 is made of polyimide, acryl or phenolic resin
- the high refractive index insulating layer 1012 is made of Ti 2 O 3 , TiO 2 or ZnSe and has a refractive index greater than that of the pixel.
- the anode layer 1010 is typically made of an indium tin oxide ITO material
- the cathode layer is made of a metal or alloy material having a certain transmittance.
- the second embodiment is the same as the first embodiment, the high refractive index insulating layer 1012 is formed in a curved curved structure at the opening, and the high refractive index insulating layer 1012 is adjacent to the light emitting layer 1013.
- the surface has a certain surface roughness to form a plurality of micro-planes having mutually different inclination angles, so that most of the light rays incident from the light-emitting layer 1013 to the high-refractive-index insulating layer 1012 are in the high-refractive-index insulating layer 1012 and the pixel defining layer. Total reflection occurs at the interface of 1011, and the effect of further improving the light output efficiency of the organic light-emitting display device is achieved.
- the angle of curvature of the high refractive index insulating layer 1012 is between 20 degrees and 45 degrees from the plane of the pixel electrode, and the thickness of the high refractive index insulating layer 1012 is 10 to 1000 nm.
- the thickness of 1011 is 1 to 3 ⁇ m.
- the organic light-emitting display device may further include a color film substrate disposed on a side of the cathode layer away from the light-emitting layer, and the light emitted by the light-emitting layer is white light.
- color image display is realized by the setting of the color filter substrate.
- each of the functional layers such as a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer is included between the anode layer and the cathode layer.
- the structure of the present disclosure has been described above with the top emission structure of the organic light emitting display device, but the technical solution of the present disclosure is not limited to the top emission type organic light emitting display device, and may be applied to the bottom emission type structure. Those skilled in the art should be able to understand the specific structure of the bottom emission type organic light emitting display device when adopting the technical solutions of the present disclosure, and will not be described in detail herein.
- Another aspect of the present disclosure further provides a method of fabricating an organic light emitting display device having the above structure, comprising the steps of sequentially forming an anode layer and a pixel defining layer, further comprising providing a high refractive index insulating layer on the pixel defining layer. The steps of the layer.
- the manufacturing method of the organic light emitting display device includes the steps of:
- the second patterning process forms a pixel defining layer 3 on the anode layer 2 such that the pixel defining layer 3 is provided with an opening at a corresponding position of the anode layer 2 to expose the anode layer 2; the outer surface of the pixel defining layer 3 has a certain The curvature is curved, and the angle between the anode layer 2 and the anode layer 2 is between 20 and 45 degrees; in addition, the layer 3 can be further defined by the ultraviolet light to illuminate the pixel at the opening to improve the slope angle thereof;
- the surface of the high refractive index insulating layer 6 is processed by a dry etching process to increase the surface roughness to further improve the light output efficiency;
- Each functional layer between the cathode and the anode is formed by an evaporation or inkjet process, including a light-emitting layer, a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer.
- first patterning process, the second patterning process, and the third patterning process in the above manufacturing method specifically include exposure, development, and etching process steps.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims (15)
- 一种有机发光显示装置,包括阳极层、阴极层和设置于阳极层和阴极层之间的像素定义层和发光层,其中所述像素定义层具有开口,所述发光层设置于所述开口中,所述发光层与所述像素定义层之间设置有折射率大于所述像素定义层的折射率的高折射率绝缘层。
- 如权利要求1所述的有机发光显示装置,其中,所述像素定义层的制作材料为聚酰亚胺、亚克力或酚醛树脂,所述高折射率绝缘层的制作材料为Ti2O3、TiO2或ZnSe。
- 如权利要求1所述的有机发光显示装置,其中,所述高折射率绝缘层在所述开口处形成为弯曲弧形结构。
- 如权利要求3所述的有机发光显示装置,其中,所述弯曲弧形与所述阳极层所在平面之间的夹角位于20度至45度之间。
- 如权利要求1所述的有机发光显示装置,其中,所述高折射率绝缘层的厚度为10至1000nm。
- 如权利要求3所述的有机发光显示装置,其中,所述高折射率绝缘层邻近所述发光层的表面设置有多个相互呈不同倾斜角度的微平面,用于对传输至所述高折射率绝缘层的所述光线的角度进行折射,以使折射后的所述光线在传输至所述高折射率绝缘层与所述像素定义层的界面处时发生全反射。
- 如权利要求1所述的有机发光显示装置,其中,所述有机发光显示装置还包括薄膜晶体管阵列基板,设置于所述阳极层远离所述发光层的一侧。
- 如权利要求1或7所述的有机发光显示装置,其中,所述有机发光显示装置还包括彩膜基板,设置于所述阴极层远离所述发光层的一侧。
- 一种如权利要求1所述有机发光显示装置的制造方法,包括依次形成所述阳极层和所述像素定义层,其中,还包括在所述像素定义层上形成所述高折射率绝缘层的步骤。
- 如权利要求9所述的制造方法,其中,在所述像素定义层上形成所述高折射率绝缘层的步骤包括:通过蒸镀、磁控溅射工艺在所述像素定义层上形成具有所述高折射率绝 缘层的制成材料的膜层;通过构图工艺在形成的所述膜层上、所述像素定义层的开口位置形成开口,使阳极层露出,构成为高折射率绝缘层。
- 如权利要求9或10所述的制造方法,其中,所述高折射率绝缘层在所述开口处形成为弯曲弧形结构。
- 如权利要求9或10所述的制造方法,其中,所述弯曲弧形与所述阳极层所在平面之间的夹角位于20度至45度之间。
- 如权利要求9或10所述的有机发光显示装置,其中,所述高折射率绝缘层的厚度为10至1000nm。
- 如权利要求11所述的制造方法,其中,在所述像素定义层上形成所述高折射率绝缘层的步骤包括:通过干刻工艺对所述高折射率绝缘层的表面进行处理,以便形成多个相互呈不同倾斜角度的微平面。
- 如权利要求9所述的制造方法,其中,所述像素定义层的制作材料为聚酰亚胺、亚克力或酚醛树脂,所述高折射率绝缘层的制作材料为Ti2O3、TiO2或ZnSe。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/651,119 US9525013B2 (en) | 2014-06-05 | 2014-09-30 | Organic light-emitting diode display device and its manufacturing method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410247203.0 | 2014-06-05 | ||
CN201410247203.0A CN104037357B (zh) | 2014-06-05 | 2014-06-05 | 一种有机发光显示装置及其制造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015184712A1 true WO2015184712A1 (zh) | 2015-12-10 |
Family
ID=51468050
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/CN2014/087858 WO2015184712A1 (zh) | 2014-06-05 | 2014-09-30 | 一种有机发光显示装置及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9525013B2 (zh) |
CN (1) | CN104037357B (zh) |
WO (1) | WO2015184712A1 (zh) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104037357B (zh) * | 2014-06-05 | 2016-01-27 | 京东方科技集团股份有限公司 | 一种有机发光显示装置及其制造方法 |
CN104241541B (zh) | 2014-09-15 | 2016-12-14 | 京东方科技集团股份有限公司 | 有机电致发光器件及显示装置 |
CN104600093A (zh) * | 2014-12-25 | 2015-05-06 | 上海和辉光电有限公司 | 一种显示面板 |
CN105552249B (zh) * | 2016-03-16 | 2017-11-14 | 京东方科技集团股份有限公司 | Oled显示基板及其制作方法、显示装置 |
CN105870154B (zh) * | 2016-04-28 | 2019-04-05 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、oled显示装置 |
JP2018006212A (ja) | 2016-07-05 | 2018-01-11 | 株式会社ジャパンディスプレイ | 表示装置 |
US10141377B2 (en) * | 2016-07-29 | 2018-11-27 | Lg Display Co., Ltd. | Electroluminescent display device |
CN106847861B (zh) * | 2016-12-26 | 2020-05-05 | 武汉华星光电技术有限公司 | 底发光型oled显示单元及其制作方法 |
CN106848095A (zh) * | 2017-01-24 | 2017-06-13 | 上海天马微电子有限公司 | 一种有机电致发光显示面板及其制备方法和电子设备 |
CN108630728B (zh) * | 2017-03-24 | 2020-07-28 | 京东方科技集团股份有限公司 | 像素界定层、有机电致发光器件及其制备方法和显示装置 |
CN207052608U (zh) * | 2017-08-24 | 2018-02-27 | 京东方科技集团股份有限公司 | 一种显示基板及显示装置 |
WO2019095297A1 (zh) * | 2017-11-17 | 2019-05-23 | 深圳市柔宇科技有限公司 | 有机发光二极管显示模组及其制作方法及电子装置 |
CN111201628A (zh) * | 2017-12-20 | 2020-05-26 | 深圳市柔宇科技有限公司 | Oled显示面板的像素的共振腔结构和oled显示面板 |
CN108281470B (zh) * | 2018-01-29 | 2021-08-27 | 上海天马有机发光显示技术有限公司 | 一种阵列基板、电致发光显示面板及显示装置 |
CN108400146B (zh) * | 2018-01-31 | 2020-08-04 | 上海天马微电子有限公司 | 一种有机发光显示面板及显示装置 |
CN108987444B (zh) * | 2018-07-06 | 2021-06-11 | 云谷(固安)科技有限公司 | 显示基板及其制作方法、显示面板和显示装置 |
CN109301092B (zh) * | 2018-08-31 | 2020-10-16 | 武汉华星光电半导体显示技术有限公司 | Oled显示面板及其制作方法 |
CN109950295B (zh) | 2019-04-10 | 2021-03-23 | 合肥鑫晟光电科技有限公司 | Oled显示基板、oled显示装置、亮度补偿方法 |
CN110265439A (zh) | 2019-06-06 | 2019-09-20 | 武汉华星光电半导体显示技术有限公司 | 有机发光二极管显示面板及电子设备 |
CN110797382B (zh) * | 2019-11-08 | 2022-04-29 | 福州京东方光电科技有限公司 | 显示面板 |
CN110867470B (zh) * | 2019-11-21 | 2022-09-27 | 武汉天马微电子有限公司 | 一种显示面板、制备方法及显示装置 |
KR20210137810A (ko) * | 2020-05-11 | 2021-11-18 | 삼성전자주식회사 | 전자 소자, 이의 제조 방법, 및 이를 포함하는 표시 장치 |
CN114388560A (zh) * | 2020-10-22 | 2022-04-22 | 京东方科技集团股份有限公司 | 显示面板及其制备方法、显示装置 |
CN112420950B (zh) * | 2020-11-17 | 2022-07-12 | 武汉华星光电半导体显示技术有限公司 | 一种显示面板及其制备方法、显示装置 |
CN112531000B (zh) * | 2020-12-02 | 2022-12-09 | 深圳市中优图科技有限公司 | 一种oled显示面板及其制造方法 |
WO2022153144A1 (ja) * | 2021-01-14 | 2022-07-21 | 株式会社半導体エネルギー研究所 | 発光素子、表示装置、および電子機器 |
US20240188396A1 (en) * | 2021-08-31 | 2024-06-06 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Display substrate, method for manufacturing the display substrate and display device |
CN113838995B (zh) * | 2021-09-22 | 2024-02-13 | 云谷(固安)科技有限公司 | 显示面板及显示装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040183436A1 (en) * | 2003-03-20 | 2004-09-23 | Masato Ito | Organic EL display device |
CN104037357A (zh) * | 2014-06-05 | 2014-09-10 | 京东方科技集团股份有限公司 | 一种有机发光显示装置及其制造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7492092B2 (en) * | 2002-12-17 | 2009-02-17 | Seiko Epson Corporation | Self-emitting element, display panel, display apparatus, and method of manufacturing self-emitting element |
KR100754875B1 (ko) * | 2005-11-07 | 2007-09-04 | 삼성전자주식회사 | 표시장치와 그 제조방법 |
KR20120139386A (ko) * | 2011-06-17 | 2012-12-27 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR20140015557A (ko) * | 2011-06-24 | 2014-02-06 | 쇼와 덴코 가부시키가이샤 | 유기발광 소자 및 유기발광 소자의 제조 방법 |
KR102086557B1 (ko) * | 2013-12-31 | 2020-03-10 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
-
2014
- 2014-06-05 CN CN201410247203.0A patent/CN104037357B/zh active Active
- 2014-09-30 WO PCT/CN2014/087858 patent/WO2015184712A1/zh active Application Filing
- 2014-09-30 US US14/651,119 patent/US9525013B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040183436A1 (en) * | 2003-03-20 | 2004-09-23 | Masato Ito | Organic EL display device |
CN104037357A (zh) * | 2014-06-05 | 2014-09-10 | 京东方科技集团股份有限公司 | 一种有机发光显示装置及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20160276418A1 (en) | 2016-09-22 |
US9525013B2 (en) | 2016-12-20 |
CN104037357B (zh) | 2016-01-27 |
CN104037357A (zh) | 2014-09-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2015184712A1 (zh) | 一种有机发光显示装置及其制造方法 | |
JP6082907B2 (ja) | 表示装置及び表示装置の製造方法 | |
US20190312233A1 (en) | Organic light emitting diode display device | |
KR102205526B1 (ko) | 유기 발광 표시 장치 | |
US8884280B2 (en) | Organic light emitting diode display and manufacturing method thereof | |
WO2016127581A1 (zh) | 像素结构、显示装置以及像素结构的制作方法 | |
WO2019000904A1 (zh) | Oled显示基板及其制作方法、显示装置 | |
US20140027735A1 (en) | Organic light emitting diode display and manufacturing method thereof | |
TW201929288A (zh) | 有機發光顯示裝置 | |
CN111952481B (zh) | 显示面板及电子设备 | |
US11527590B2 (en) | Light emitting display apparatus | |
CN111987123B (zh) | 发光显示设备 | |
CN106847861B (zh) | 底发光型oled显示单元及其制作方法 | |
US20160104857A1 (en) | Organic light-emitting display apparatus and method of manufacturing the same | |
JP5179392B2 (ja) | 有機el発光装置 | |
KR102033162B1 (ko) | Oled 발광 소자 및 표시 장치 | |
CN109065597B (zh) | 有机发光显示基板 | |
JP5138569B2 (ja) | 有機el発光装置 | |
JP2016136484A (ja) | 面発光装置 | |
KR102608318B1 (ko) | 유기발광장치 | |
US10468463B1 (en) | Display device with optical reflecting layer | |
US8492967B2 (en) | Light emitting device and display panel | |
WO2015119203A1 (ja) | El素子用前面板及び照明装置 | |
US9214648B2 (en) | Light extraction substrate and organic light-emitting device having the same | |
JP6488593B2 (ja) | 照明装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 14651119 Country of ref document: US |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 14893701 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
32PN | Ep: public notification in the ep bulletin as address of the adressee cannot be established |
Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205N DATED 10/02/2017) |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 14893701 Country of ref document: EP Kind code of ref document: A1 |