WO2015184618A1 - 基于固态荧光材料的嵌入式白光led封装结构及其制作方法 - Google Patents
基于固态荧光材料的嵌入式白光led封装结构及其制作方法 Download PDFInfo
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- WO2015184618A1 WO2015184618A1 PCT/CN2014/079253 CN2014079253W WO2015184618A1 WO 2015184618 A1 WO2015184618 A1 WO 2015184618A1 CN 2014079253 W CN2014079253 W CN 2014079253W WO 2015184618 A1 WO2015184618 A1 WO 2015184618A1
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- fluorescent material
- solid
- package structure
- yag
- led package
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- 239000000463 material Substances 0.000 title claims abstract description 54
- 239000007787 solid Substances 0.000 title claims abstract description 47
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 238000000034 method Methods 0.000 claims abstract description 20
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000005286 illumination Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/644—Heat extraction or cooling elements in intimate contact or integrated with parts of the device other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
Definitions
- the invention relates to the technical field of LED illumination, in particular to an embedded white LED package structure based on solid fluorescent material and a manufacturing method thereof.
- LEDs are solid-state semiconductor devices that convert electrical energy directly into light energy. Compared with traditional incandescent lamps and fluorescent lamps, white LEDs have the advantages of low power consumption, high luminous efficiency, long service life, energy saving and environmental protection. Therefore, they are widely used not only in the field of daily lighting, but also in the field of display devices. Currently, access to white LEDs The technology can be divided into two categories, namely: (1) using three kinds of LEDs emitting red, green and blue light Chip mixing; (2) using a single color (blue or ultraviolet) LED chip to excite the appropriate fluorescent material.
- white LEDs mainly use a blue LED chip and a yellow-emitting phosphor Ce:YAG which can be effectively excited by blue light, and then use a lens principle to mix complementary yellow and blue light to obtain white light.
- conventional phosphors have disadvantages such as low excitation efficiency, low light conversion efficiency, and poor uniformity.
- epoxy resin or silica gel mixed with phosphors tends to age at high temperatures, resulting in a decrease in transmittance, which ultimately affects white light devices. Light output efficiency.
- the existing LED package structure needs to use a package bracket, the blue light is easy to leak, and the process is complicated, the cost is high, and the heat dissipation performance is poor.
- the present invention provides an embedded white LED package structure based on solid fluorescent material and a manufacturing method thereof.
- the technical problem to be solved by the invention is that the existing LED package structure has a complicated process, high cost, easy leakage of blue light, and poor heat dissipation performance.
- the technical solution of the present invention is: an embedded white LED package structure based on a solid fluorescent material, comprising a blue chip and a Ce:YAG solid fluorescent material, wherein the Ce:YAG solid fluorescent material is provided There is a groove that matches the blue chip, and the blue chip is embedded in the groove.
- the blue chip embedded surface of the Ce:YAG solid fluorescent material is provided with a reflective film.
- the embedded white light LED package structure based on the solid fluorescent material further comprises a heat conductive substrate disposed on the blue chip embedded surface of the Ce:YAG solid fluorescent material.
- the thermally conductive substrate is disposed behind the reflective film.
- the light-emitting surface of the Ce:YAG solid-state fluorescent material is provided with a red light film, and the red light film can convert part of blue light into red light having an emission band of 580 nm to 660 nm.
- the Ce:YAG solid fluorescent material is any one of a Ce:YAG fluorescent single crystal, a Ce:YAG fluorescent polycrystal, a Ce:YAG fluorescent ceramic, or a Ce:YAG fluorescent glass.
- the chemical composition of the main component of the Ce:YAG solid fluorescent material is: (Y 1-xm A x Ce m ) 3 (Al 1-y B y ) 5 O 12 , wherein 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ m ⁇ 0.05; wherein A is one of Lu, Tb, Pr, La, Gd; B is one of Ga, Ti, Mn, Cr, Zr.
- the blue chip is a gallium nitride based blue chip.
- the invention also discloses a manufacturing method of an embedded white LED package structure based on a solid fluorescent material, comprising the following steps:
- step B cutting and polishing the Ce:YAG solid fluorescent material prepared in step A to obtain a solid fluorescent sheet of a desired size
- the blue chip is embedded in the recess of the solid fluorescent sheet, and then the electrode is mounted to form an integral package structure.
- the present invention provides an embedded white LED package structure based on a solid fluorescent material and a manufacturing method thereof.
- the high power blue chip is directly embedded in a groove of a solid fluorescent material, and the chip is used by a lens principle.
- the emitted blue and solid fluorescent materials convert the yellow-green light emitted and mix to obtain white light.
- the embedded white LED package structure based on solid-state fluorescent material has simple process and low cost; has high fluorescence efficiency, does not leak blue light; can directly dissipate heat through solid fluorescent material, has good heat dissipation performance; saves energy and protects environment and greatly improves the service life of LED lighting equipment .
- Embodiment 1 is a schematic structural view of Embodiment 1 of the present invention.
- Embodiment 2 is a schematic structural view of Embodiment 2 of the present invention.
- Embodiment 3 is a schematic structural view of Embodiment 3 of the present invention.
- Embodiment 4 is a schematic structural view of Embodiment 4 of the present invention.
- the obtained embedded white LED package structure based on solid fluorescent material is shown in FIG. 1 .
- the obtained embedded white LED package structure based on solid fluorescent material is shown in FIG. 2 .
- the obtained embedded white LED package structure based on solid fluorescent material is shown in FIG. 3 .
- the reflective film 6 is added to the blue chip insertion surface of the fluorescent crystal to adjust the overall light efficiency of the device.
- the obtained embedded white LED package structure based on solid fluorescent material is shown in FIG. 4 .
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
Abstract
Description
Claims (10)
- 基于固态荧光材料的嵌入式白光LED封装结构,包括蓝光芯片和Ce:YAG固态荧光材料,其特征在于,所述Ce:YAG固态荧光材料上设有与蓝光芯片相匹配的凹槽,所述蓝光芯片嵌入凹槽内。
- 根据权利要求1所述的基于固态荧光材料的嵌入式白光LED封装结构,其特征在于,所述Ce:YAG固态荧光材料的蓝光芯片嵌入面设有反光膜。
- 根据权利要求1所述的基于固态荧光材料的嵌入式白光LED封装结构,其特征在于,所述基于固态荧光材料的嵌入式白光LED封装结构还包括导热基板,所述导热基板设置于Ce:YAG固态荧光材料的蓝光芯片嵌入面。
- 根据权利要求2所述的基于固态荧光材料的嵌入式白光LED封装结构,其特征在于,所述基于固态荧光材料的嵌入式白光LED封装结构还包括导热基板,所述导热基板设置于反光膜的后面。
- 根据权利要求1~4任一所述的基于固态荧光材料的嵌入式白光LED封装结构,其特征在于,所述Ce:YAG固态荧光材料的出光面设有红光膜,所述红光膜可将部分蓝光转换为发光波段为580nm 到660nm的红光。
- 根据权利要求1~4任一所述的基于固态荧光材料的嵌入式白光LED封装结构,其特征在于,所述Ce:YAG固态荧光材料为Ce:YAG荧光单晶、Ce:YAG荧光多晶、Ce:YAG荧光陶瓷或Ce:YAG荧光玻璃中的任意一种。
- 根据权利要求6所述的基于固态荧光材料的嵌入式白光LED封装结构,其特征在于,所述Ce:YAG固态荧光材料主体成分化学式为:(Y1-x-mAxCem)3(Al1-yBy)5O12,其中,0≤x≤1,0≤y≤1,0≤m≤0.05;其中A为Lu、Tb、Pr、La、Gd中的一种;B为Ga、Ti、Mn、Cr、Zr中的一种。
- 根据权利要求1~4任一所述的基于固态荧光材料的嵌入式白光LED封装结构,其特征在于,所述蓝光芯片为氮化镓基蓝光芯片。
- 基于固态荧光材料的嵌入式白光LED封装结构的制作方法,其特征在于,包括以下步骤:A.制作Ce:YAG固态荧光材料;B.对步骤A制得的Ce:YAG固态荧光材料切磨抛光得到所需尺寸的固态荧光片;C.在固态荧光片上采用刻蚀工艺加工出凹槽,凹槽的大小与对应蓝光芯片相匹配;D.将蓝光芯片嵌入固态荧光片的凹槽中,然后安装电极,形成整体封装结构。
- 根据权利要求9所述的基于固态荧光材料的嵌入式白光LED封装结构的制作方法,其特征在于,所述步骤D后还包括以下步骤:E.在封装结构的蓝光芯片端面增加反光膜;F.将封装结构的反光膜端面固定于导热基板上;G.在固态荧光片的表面增加红光膜。
Priority Applications (3)
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US14/761,954 US9537058B2 (en) | 2014-06-05 | 2014-06-05 | Embedded white light LED package structure based on solid-state fluorescence material and manufacturing method thereof |
CN201480000543.1A CN105431953B (zh) | 2014-06-05 | 2014-06-05 | 基于固态荧光材料的嵌入式白光led封装结构及其制作方法 |
PCT/CN2014/079253 WO2015184618A1 (zh) | 2014-06-05 | 2014-06-05 | 基于固态荧光材料的嵌入式白光led封装结构及其制作方法 |
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CN106298754B (zh) * | 2016-09-30 | 2019-09-06 | 鸿利智汇集团股份有限公司 | 一种csp灯珠的制作方法及csp灯珠 |
CN106746687B (zh) * | 2017-01-25 | 2019-10-01 | 上海应用技术大学 | 一种采用丝网印刷法制备led封装用荧光玻璃片的方法 |
CN112266239B (zh) * | 2020-10-19 | 2022-11-25 | 徐州凹凸光电科技有限公司 | 一种白光led/ld用高热稳定性高显色指数荧光陶瓷及其制备方法 |
CN112599509A (zh) * | 2020-11-09 | 2021-04-02 | 新沂市锡沂高新材料产业技术研究院有限公司 | 一种高亮度、色温可调的固态照明光源 |
CN112537953B (zh) * | 2020-12-16 | 2022-03-08 | 中国科学院上海硅酸盐研究所 | 一种复合荧光陶瓷及其制备方法 |
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Also Published As
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US20160268482A1 (en) | 2016-09-15 |
US9537058B2 (en) | 2017-01-03 |
CN105431953B (zh) | 2018-03-16 |
CN105431953A (zh) | 2016-03-23 |
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