WO2015152098A1 - Dispositif électroluminescent semi-conducteur et substrat de montage de semi-conducteurs optiques - Google Patents

Dispositif électroluminescent semi-conducteur et substrat de montage de semi-conducteurs optiques Download PDF

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Publication number
WO2015152098A1
WO2015152098A1 PCT/JP2015/059785 JP2015059785W WO2015152098A1 WO 2015152098 A1 WO2015152098 A1 WO 2015152098A1 JP 2015059785 W JP2015059785 W JP 2015059785W WO 2015152098 A1 WO2015152098 A1 WO 2015152098A1
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Prior art keywords
reflector
emitting device
fibrous inorganic
substrate
region
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PCT/JP2015/059785
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English (en)
Japanese (ja)
Inventor
安希 木村
勝哉 坂寄
恵維 天下井
了 管家
俊之 坂井
俊正 財部
智紀 佐相
誠 溝尻
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大日本印刷株式会社
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Publication of WO2015152098A1 publication Critical patent/WO2015152098A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present invention relates to a semiconductor light emitting device and a substrate for mounting an optical semiconductor.
  • LED element which is one of semiconductor light emitting elements, is widely used as a light source such as a display lamp because it is small and has a long life and excellent power saving.
  • LED elements with higher brightness have been manufactured at a relatively low cost, and therefore, use as a light source to replace fluorescent lamps and incandescent bulbs has been studied.
  • many surface-mount LED packages are made of a conductive material having a surface that reflects light such as silver (LED mounting substrate).
  • LED elements are arranged on top of each other, and a reflector (reflector) that reflects light in a predetermined direction around each LED element is used.
  • a molded article using a resin composition in which a fibrous material is blended with a thermoplastic resin is known.
  • a molded article in which carbon fiber or glass fiber is blended with an aromatic polycarbonate resin is known.
  • problems such as warping of the molded article because the anisotropy of the orientation of the fibrous material during injection molding is very large and the molding shrinkage varies depending on the direction of the molded article.
  • Patent Document 1 a resin molded product using carbon fibers having an aspect ratio of 5 to 10 has been proposed (see Patent Document 1). According to this resin molded article, it has been reported that the mechanical properties are improved and the anisotropy of the molding shrinkage rate is also significantly reduced.
  • such a low-anisotropic carbon fiber reinforced molded product has low strength of the molded product and cannot be said to have sufficient strength for use in a semiconductor light emitting device or a substrate for mounting an optical semiconductor.
  • mechanical properties such as mechanical strength and bending strength cannot be improved.
  • Patent Document 2 is extremely excellent in heat resistance, and exhibits excellent heat resistance even when formed into a molded body such as a reflector.
  • Patent Document 3 also proposes an electron beam curable resin composition containing a specific crosslinking agent, and a semiconductor light emitting device using the resin composition as a reflector.
  • an object of the present invention is to provide a semiconductor light emitting device and a substrate for mounting an optical semiconductor which have a reflector having good adhesion without causing warp even by heating or the like.
  • the present inventors have obtained a semiconductor light emitting device having a reflector, the reflector containing a fibrous inorganic substance, and the orientation angle of the fibrous inorganic substance It has been found that the above-mentioned problem can be solved by controlling.
  • the present invention has been completed based on such findings.
  • the present invention (1) A semiconductor light emitting device including at least a substrate, a reflector having a concave cavity, and an optical semiconductor element, wherein the reflector is formed from a resin composition containing a fibrous inorganic substance, and the thickness of the reflector In the direction, it has a portion including a region where the fibrous inorganic material is oriented and a region where the fibrous inorganic material is not oriented, and the thickness of the region where the fibrous inorganic material is oriented in that portion is 50% or less with respect to the total thickness of the reflector portion.
  • a semiconductor light emitting device characterized by (2) A semiconductor light emitting device comprising at least a substrate, a reflector having a concave cavity, and an optical semiconductor element, wherein the outer shape of the semiconductor light emitting device is formed by cutting, and the cut surface is oriented with fibrous inorganic materials
  • a semiconductor light emitting device characterized in that the thickness of the region where the fibrous inorganic substance is oriented in an arbitrary part is 50% or less with respect to the total thickness of the reflector part, (3)
  • a substrate for mounting an optical semiconductor comprising a substrate and a reflector having a concave cavity, wherein the reflector is formed from a resin composition containing a fibrous inorganic substance, and fibers are formed in the thickness direction of the reflector.
  • An optical semiconductor mounting substrate including an optical semiconductor mounting substrate and (4) a substrate and a reflector having a recessed cavity, wherein the outer shape of the optical semiconductor mounting substrate is formed by cutting, and the cutting surface is a fiber
  • the thickness of the region where the fibrous inorganic material is oriented at any part is formed from a region where the fibrous inorganic material is oriented and a non-oriented region.
  • An optical semiconductor mounting board characterized in that the whole is not more than 50% of the thickness, Is to provide.
  • the semiconductor light emitting device of the present invention even when the reflector, which is a component, is heated, the warp does not occur and the adhesion is maintained. And it is excellent in mechanical strength, heat resistance, and the adhesiveness of a reflector and a board
  • the semiconductor light emitting device 1 of the present invention includes a reflector 12 having a concave cavity 20, at least one optical semiconductor element 10 provided on the bottom surface of the concave part, a pad portion 13 a for mounting the optical semiconductor element, and A substrate 14 having a lead portion 13b for electrical connection with the optical semiconductor element is provided.
  • the optical semiconductor element mounted on the pad portion is electrically connected to the lead portion by a lead wire 16.
  • the cavity 20 may be an air gap, but from the viewpoint of preventing electrical problems and protecting the optical semiconductor element from moisture, dust, and the like, the optical semiconductor element is sealed and emitted from the optical semiconductor element.
  • a resin capable of transmitting the light to the outside is filled.
  • the sealing resin may contain a phosphor as necessary.
  • a lens 18 for condensing the light emitted from the optical semiconductor element may be provided on the reflector 12.
  • the lens is usually made of a resin, and various structures are adopted depending on the purpose and application, and may be colored as necessary. Hereinafter, each member will be described in detail.
  • the substrate 14 in the semiconductor light emitting device 1 of the present invention is a thin metal plate also called a lead frame, and the material used is mainly metal (pure metal, alloy, etc.), for example, aluminum, copper, copper-nickel. -Tin alloys, iron-nickel alloys, etc. Further, the substrate may have a light reflection layer formed so as to cover part or all of the front and back surfaces.
  • the light reflection layer desirably has a high reflection function for reflecting light from the optical semiconductor element. Specifically, for electromagnetic waves having a wavelength of 380 nm to 800 nm, the reflectance at each wavelength is preferably 65% to 100%, more preferably 75% to 100%, and more preferably 80% More preferably, it is 100% or less.
  • the material of the light reflecting layer include silver and silver-containing metals, but the silver content is preferably 60% by mass or more. When the silver content is 60% or more, a sufficient light reflection function can be obtained. From the same viewpoint, the silver content is preferably 70% by mass or more, and more preferably 80% by mass or more.
  • the thickness of the light reflecting layer is desirably 1 to 20 ⁇ m. When the thickness of the light reflection layer is 1 ⁇ m or more, a sufficient reflection function is obtained, and when it is 20 ⁇ m or less, it is advantageous in terms of cost and processability is improved.
  • the thickness of the substrate is not particularly limited, but is preferably in the range of 0.1 to 1.0 mm.
  • the substrate is formed by etching or pressing a metal plate material, and includes a pad portion on which an optical semiconductor element such as an LED chip is mounted and a lead portion that supplies power to the optical semiconductor element.
  • the pad portion and the lead portion are insulated, and the optical semiconductor element is connected to the lead portion by a lead wire through processes such as wire bonding and chip bonding.
  • the reflector 12 has a function of reflecting the light from the optical semiconductor element in the direction of the light output portion (in the direction of the lens 18 in FIG. 1).
  • the reflector is formed of a resin composition containing at least a resin and a fibrous inorganic substance. And this reflector has a site
  • the alignment region (12a) can be obtained by any of the following methods.
  • binarization refers to classifying each pixel constituting a weighted average value of the brightness distribution of all pixels in the image as a threshold, white above the threshold and black below the threshold. Thereby, only the fibrous inorganic substance is black and the other components are white, so that the shape of the fibrous inorganic substance can be grasped.
  • the outer shape of the fibrous inorganic substance in the binarized image is approximated to an ellipse using image processing software Image J.
  • the angle from the center part of the major axis of each fibrous inorganic substance approximated by the ellipse and the side of the reflector outer peripheral part is obtained, and the average angle is defined as an orientation angle of 0 degree.
  • the orientation angle of each fibrous inorganic substance from the orientation angle of 0 degree is determined.
  • the region where the orientation angle of 90% or more of the fibrous inorganic material is in the range of ⁇ 20 degrees is the oriented region (12a), and the region where the orientation angle of 90% or more of the fibrous inorganic material is more than ⁇ 20 degrees is the non-oriented region (12b). Certify.
  • Polishing is performed with a thickness not exceeding the height of the microscopically observed fibrous inorganic material, and the orientation angle is similarly determined. By repeating this operation, the orientation region in the thickness direction can be obtained.
  • the measurement was performed by appropriately adjusting the magnification with an optical microscope (Axio Imager M1m, manufactured by Carl Zeiss).
  • X-ray CT X-ray CT
  • a square reflector region having a side of 300 ⁇ m including the midpoint of any one of the four sides of the outer peripheral portion in the reflector XY direction from the upper surface is enlarged (refer to FIG. 3 for the position).
  • (2) The observation image is binarized to obtain a binarized image.
  • binarization refers to classifying each pixel constituting a weighted average value of the brightness distribution of all pixels in the image as a threshold, white above the threshold and black below the threshold.
  • a power spectrum image is obtained by performing Fourier transform on the binarized image using image processing software Image J.
  • the brightness of a power spectrum image is represented by a logarithm.
  • the power spectrum image is binarized to obtain a binarized image.
  • the image density threshold is the half value position on the bright side of the brightness distribution in the image.
  • the orientation region in the thickness direction can be obtained by repeating this operation for each width smaller than the fiber cross section of the fibrous inorganic substance observed microscopically.
  • a CT image (XZ cross section, YZ cross section, XY cross section) of a cross section is acquired using, for example, “TDM1000-IW” manufactured by Yamato Scientific Co., Ltd. Can do.
  • TDM1000-IW Yamato Scientific Co., Ltd. Can do.
  • An example of measurement conditions is shown below.
  • Measurement condition (1) X-ray conditions X-ray tube voltage: 75.0 (kV) X-ray tube current: 0.01 (mA) (2) Scan position Enlarged axis position: 10.0 (mm) (3) Scan parameters Number of views: 360 Number of frames / view: 3 (4) Reconfiguration information Matrix size X, Y, Z: 512 each Field of view X, Y, Z: 2.268 (mm) each Voxel size X, Y, Z: 0.00443 (mm) each
  • the thickness of the orientation region (12a) of the fibrous inorganic material is 50% or less with respect to the total thickness of the reflector portion.
  • the alignment region may exist on the mounting surface of the optical semiconductor element.
  • the fibrous inorganic substance used in the present invention is not particularly limited as long as the effects of the present invention are achieved, but the aspect ratio is preferably 2 to 50, and more preferably 5 to 50. When the aspect ratio is 2 or more, mechanical properties such as mechanical strength and bending strength can be improved. On the other hand, when the aspect ratio is 50 or less, the degree of orientation is reduced.
  • the fiber length of the fibrous inorganic substance is preferably 10 to 1000 ⁇ m. When the fiber length is 10 ⁇ m or more, the mechanical properties can be improved. On the other hand, when the fiber length is 1000 ⁇ m or less, the reflection properties are not hindered. From the above viewpoint, the fiber length of the fibrous inorganic substance is more preferably in the range of 30 to 200 ⁇ m.
  • the material of the fibrous inorganic substance examples include glass fiber, zeolite fiber, potassium titanate fiber, ceramic fiber, and calcium silicate fiber.
  • glass fiber is preferable from the viewpoint of transparency, toughness and the like.
  • the content of the fibrous inorganic substance is preferably 10 to 300 parts by mass with respect to 100 parts by mass of the resin forming the reflector. If it is 10 mass parts or more, the addition effect of a fibrous inorganic substance will appear and a mechanical characteristic will be improved. On the other hand, if it is 300 parts by mass or less, the moldability and the strength of the molded product are good. From the above viewpoint, the content of the fibrous inorganic substance is more preferably in the range of 50 to 200 parts by mass.
  • the reflector of the present invention is formed of a resin composition containing a resin and a fibrous inorganic substance.
  • the resin used here is preferably a thermoplastic resin from the viewpoint of moldability, workability, and the like.
  • thermoplastic resin examples include polyolefin, polyamide, polyphthalamide, polyphenylene sulfide, liquid crystal polymer, polyether sulfone, polybutylene terephthalate, polyether imide, and the like. Of these, olefin resin (polyolefin) is preferable.
  • the olefin resin is a polymer of a structural unit whose main chain is composed of a carbon-carbon bond, and the carbon bond may include a cyclic structure.
  • a homopolymer may be sufficient and the copolymer formed by copolymerizing with another monomer may be sufficient.
  • a resin obtained by ring-opening metathesis polymerization of a norbornene derivative or hydrogenation thereof an olefin homopolymer such as ethylene or propylene, an ethylene-propylene block copolymer, a random copolymer, or ethylene and / or propylene And copolymers of other olefins such as butene, pentene and hexene, and copolymers of ethylene and / or propylene with other monomers such as vinyl acetate.
  • polymethylpentene is preferable.
  • polymethylpentene has a refractive index of 1.46, which is close to the refractive index of glass fibers or silica particles, even when mixed, it is possible to suppress inhibition of optical properties such as transmittance and reflectance.
  • the polymethylpentene resin a homopolymer of 4-methylpentene-1 is preferable, but 4-methylpentene-1 and other ⁇ -olefins, for example, ⁇ -olefins having 2 to 20 carbon atoms such as ethylene and propylene are used. A copolymer may be used.
  • Polymethylpentene can be cured with an electron beam, but since molecular chains are broken simultaneously with crosslinking, it is preferable to use a combination of crosslinking treatment agents in order to promote effective crosslinking with an electron beam.
  • thermoplastic resin it is preferable to use electron beam curable resin from the point which can provide the outstanding heat resistance.
  • the acceleration voltage in the case of using an electron beam curable resin can be appropriately selected according to the thickness of the resin or reflector used, but it is usually preferable to cure at an acceleration voltage of about 70 to 10,000 kV.
  • the irradiation dose is preferably such that the crosslinking density of the resin layer is saturated, and is usually selected in the range of 5 to 600 kGy (0.5 to 60 Mrad), preferably 10 to 400 kGy (1 to 40 Mrad).
  • the electron beam source is not particularly limited.
  • various electron beam accelerators such as a cockroft Walton type, a bandegraft type, a resonant transformer type, an insulated core transformer type, a linear type, a dynamitron type, and a high frequency type. Can be used.
  • the resin composition forming the reflector of the present invention may be mixed with a crosslinking agent within a range that does not impair the effects of the present invention.
  • the crosslinking agent has a saturated or unsaturated ring structure, and at least one of the atoms forming at least one ring is an allyl group, a methacryl group, an allyl group via a linking group, and a linking group.
  • Those having a structure formed by bonding to any allylic substituent of the methacrylic group via The crosslinking agent having such a structure can exhibit excellent electron beam curability and can impart excellent heat resistance to the reflector, particularly when used in combination with an electron beam curable resin.
  • Examples of the saturated or unsaturated ring structure include a cyclo ring, a hetero ring, and an aromatic ring.
  • the number of atoms forming the ring structure is preferably 3 to 12, more preferably 5 to 8, and still more preferably a 6-membered ring.
  • Examples of the linking group include an ester bond, an ether bond, an alkylene group, and a (hetero) arylene group.
  • triallyl isocyanurate methyl diallyl isocyanurate, diallyl monoglycidyl isocyanuric acid, monoallyl diglycidyl isocyanurate, trimethallyl isocyanurate, diallyl ester of orthophthalic acid, diallyl ester of isophthalic acid and the like.
  • the molecular weight of the crosslinking agent is preferably 1000 or less, more preferably 500 or less, and even more preferably 300 or less, from the viewpoints of good dispersibility in the resin composition and causing an effective crosslinking reaction. .
  • the number of ring structures is preferably 1 to 3, more preferably 1 or 2, and further preferably 1.
  • the content of the crosslinking agent is preferably 0.5 to 40 parts by mass with respect to 100 parts by mass of the resin. With this content, good curability can be imparted without bleeding out. From the above viewpoint, the content of the crosslinking agent is more preferably 1 to 30 parts by mass, and particularly preferably 5 to 20 parts by mass.
  • the resin composition used for the reflector of the present invention preferably contains a white pigment in order to enhance the reflection effect.
  • a white pigment titanium oxide, zinc sulfide, zinc oxide, barium sulfide, potassium titanate and the like can be used alone or in combination, and titanium oxide is particularly preferable.
  • the content of the white pigment is preferably 10 to 500 parts by mass, more preferably 50 to 480 parts by mass, and still more preferably 100 to 450 parts by mass with respect to 100 parts by mass of the resin component.
  • the average particle size of the white pigment is preferably 0.05 to 0.50 ⁇ m in the primary particle size distribution, and more preferably 0.10 to 0.40 ⁇ m in view of moldability and high reflectance.
  • the thickness is 0.15 to 0.30 ⁇ m.
  • An average particle diameter can be calculated
  • a dispersant may be mixed within a range that does not impair the effects of the present invention.
  • the dispersant those generally used for a resin composition containing an inorganic substance can be used, and a silane coupling agent is preferred.
  • the silane coupling agent has high dispersibility and compatibility of the inorganic substance with respect to the resin, and can impart high mechanical properties and dimensional stability to the reflector.
  • silane coupling agent examples include disilazane such as hexamethyldisilazane; cyclic silazane; trimethylsilane, trimethylchlorosilane, dimethyldichlorosilane, methyltrichlorosilane, allyldimethylchlorosilane, trimethoxysilane, benzyldimethylchlorosilane, Methyltrimethoxysilane, methyltriethoxysilane, isobutyltrimethoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, trimethylmethoxysilane, hydroxypropyltrimethoxysilane, phenyltrimethoxysilane, n-butyltrimethoxysilane, n-hexadecyl Trimethoxysilane, n-octadecyltrimethoxysilane, vinyltrimethoxysilane, vinyltri
  • the resin composition forming the reflector of the present invention can contain various additives as long as the effects of the present invention are not impaired.
  • Additives can be blended.
  • the resin composition forming the reflector of the present invention can be prepared by mixing a resin, glass fiber, and a white pigment and other additives added as necessary at a predetermined ratio.
  • a known means such as a two-roll or three-roll, a stirrer such as a homogenizer, a planetary mixer, a melt kneader such as a polylab system, a lab plast mill, or a biaxial kneading extruder is applied.
  • a known means such as a two-roll or three-roll, a stirrer such as a homogenizer, a planetary mixer, a melt kneader such as a polylab system, a lab plast mill, or a biaxial kneading extruder is applied.
  • a stirrer such as a homogenizer, a planetary mixer, a melt kneader such as a polylab system, a lab plast mill, or a biaxial kn
  • the shape of the reflector 12 conforms to the shape of the end portion (joint portion) of the lens 18 and is usually a cylindrical shape such as a square shape, a circular shape, or an oval shape, or an annular shape.
  • the reflector 12 is a cylindrical body (annular body), and all the end faces of the reflector 12 are in contact with and fixed to the surface of the substrate 14.
  • the reflector 12 has a shape having a recessed cavity, and the inner surface of the reflector 12 may be widened upward in a tapered shape in order to increase the directivity of light from the optical semiconductor element 10.
  • the reflector 12 can also function as a lens holder when the end portion on the lens 18 side is processed into a shape corresponding to the shape of the lens 18.
  • the cylinder temperature is preferably 200 to 400 ° C., more preferably 220 to 320 ° C. from the viewpoint of moldability.
  • the mold temperature is preferably 10 to 170 ° C, more preferably 20 to 150 ° C.
  • the reflector according to the present invention may be subjected to ionizing radiation irradiation treatment before or after the molding step, and among them, electron beam irradiation treatment is preferable. By performing the electron beam irradiation treatment, the mechanical properties and dimensional stability of the reflector can be improved.
  • the cavity of the reflector according to the present invention is preferably sealed with a resin (sealing resin) capable of sealing the optical semiconductor element and transmitting light emitted from the optical semiconductor element to the outside.
  • a resin sealing resin
  • the lead wire is disconnected from the connection portion with the optical semiconductor element and / or the connection portion with the electrode due to the force applied by direct contact with the lead wire and the vibration or impact applied indirectly. It is possible to prevent electrical problems caused by cutting, cutting, or short-circuiting.
  • the optical semiconductor element can be protected from moisture, dust, etc., and the reliability can be maintained for a long time.
  • sealing resin is not specifically limited, Silicone resin, epoxy silicone resin, epoxy resin, acrylic resin, polyimide resin, polycarbonate resin, etc. are mentioned. Of these, silicone resins are preferred from the viewpoints of heat resistance, weather resistance, low shrinkage, and discoloration resistance.
  • An optical semiconductor device emits radiated light (generally UV or blue light in a white light LED), for example, an active layer made of AlGaAs, AlGaInP, GaP or GaN sandwiched between n-type and p-type cladding layers
  • a semiconductor chip (light emitter) having a double heterostructure, for example, has a hexahedral shape with a side length of about 0.5 mm. And in the case of the form of wire bonding mounting, it is connected to the lead part via the lead wire.
  • the substrate for mounting an optical semiconductor according to the present invention is suitably used for the semiconductor light emitting device, and includes a substrate 14 and a reflector 12 having a concave cavity.
  • the reflector is formed from a resin composition containing a fibrous inorganic material, and the reflector has an orientation region in which the orientation angle of the fibrous inorganic material is within a range of ⁇ 20 degrees with respect to a certain direction, and other non-oriented materials.
  • the thickness of the orientation region (12a) of the fibrous inorganic substance is 50% or less with respect to the total thickness of the reflector portion in the thickness direction of the reflector having the structure including the region and the outer shape of the optical semiconductor device formed by cutting It is characterized by being.
  • the orientation angle of the fibrous inorganic substance is measured by the above method.
  • a resin composition for forming a reflector on a substrate (metal frame or lead frame) 14 is molded by transfer molding, compression molding, injection molding or the like using a mold having a cavity space of a predetermined shape, A molded body having a plurality of shaped reflectors is obtained. Since a plurality of reflectors can be produced simultaneously, it is efficient and injection molding is a preferred method. The molded body thus obtained may undergo a curing process such as electron beam irradiation as necessary.
  • a substrate on which a reflector is placed is an optical semiconductor mounting substrate (FIG. 2A).
  • a separately prepared optical semiconductor element 10 such as an LED chip is disposed on the optical semiconductor mounting substrate (FIG. 2B).
  • an adhesive or a bonding member may be used to fix the optical semiconductor element 10.
  • a lead wire 16 is provided to electrically connect the optical semiconductor element and the lead portion (electrode). In that case, in order to improve the connection of the lead wire, it is preferable to heat at 100 to 250 ° C. for 5 to 20 minutes.
  • the sealing cavity 22 is manufactured by filling the cavity 20 of the reflector with a sealing resin and curing it.
  • the semiconductor light emitting device shown in FIG. 1 is obtained by dividing into pieces by a method such as dicing at a substantially center of the reflector (dotted line portion in FIG. 2).
  • the lens 18 can be disposed on the sealing portion 22 as necessary.
  • the sealing resin may be cured after the lens 18 is placed in a state where the sealing resin is uncured.
  • FIG. 2F shows the semiconductor light emitting device connected to the wiring board 24 and mounted.
  • a method for mounting the semiconductor light emitting device on the wiring board is not particularly limited, but it is preferable to use a melted solder.
  • solder is provided on a wiring board, a package is placed on the solder, and then heated to 220 to 270 ° C., which is a general solder melting temperature, in a reflow furnace to melt the solder. And mounting the semiconductor light emitting device on the wiring substrate (solder reflow method).
  • solder reflow method A well-known thing can be used for the solder used by the method using said solder.
  • Example 1 For 100 parts by mass of polymethylpentene (“TPX RT18” manufactured by Mitsui Chemicals, Inc., hereinafter referred to as “PMP”), titanium oxide (“PF-691” manufactured by Ishihara Sangyo Co., Ltd.), rutile type, average particle size 0.21 ⁇ m, hereinafter referred to as “TiO 2 ”) 450 parts by mass, glass fiber (“PF70E-001” manufactured by Nitto Boseki Co., Ltd., fiber length 70 ⁇ m, hereinafter referred to as “GF”) 120 parts by mass, tri as an additive Allyl isocyanate (manufactured by Nippon Kasei Co., Ltd., hereinafter referred to as “TAIC”) 18 parts by mass, IRGANOX 1010 (manufactured by BASF Japan) 5 parts by mass, PEP-36 (manufactured by ADEKA Corporation) 0.5 mass Part, 0.5 parts by mass of SZ-2000 (manufactured by Sak
  • the kneading was performed with a polylab system (batch type biaxial). Using this resin composition and a substrate (metal frame, lead frame) having a thickness of 0.25 mm plated with a copper plate, a molded body of 60 mm ⁇ 60 mm ⁇ 1 mm having a plurality of reflectors was obtained by an insert injection molding method. The molded body and the semiconductor light emitting device produced by the above method were evaluated by the above methods (1) to (3). The evaluation results are shown in Table 1.
  • Examples 2-4 A molded body and a semiconductor light emitting device were produced and evaluated in the same manner except that the injection molding conditions of Example 1 were appropriately changed. The results are shown in Table 1.
  • Comparative Example 1 A molded body and a semiconductor light emitting device were produced and evaluated in the same manner except that the injection molding conditions of Example 1 were appropriately changed. The results are shown in Table 1.
  • the warp is not caused even by heating or the like, even in the semiconductor light emitting device and the optical semiconductor mounting substrate having the separated reflector, the adhesion to the substrate is extremely high.
  • SYMBOLS 1 Semiconductor light-emitting device 10; Semiconductor element 12; Reflector 12a; Orientation area

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

L'invention concerne un dispositif électroluminescent semi-conducteur comprenant, au moins, un substrat, un réflecteur qui comporte une cavité concave, et un élément semi-conducteur optique. Ledit dispositif électroluminescent semi-conducteur est caractérisé : en ce que le réflecteur est constitué d'une composition de résine qui contient une substance inorganique fibreuse ; en ce que le réflecteur inclut, dans la direction de son épaisseur, une section contenant une zone dans laquelle la substance inorganique fibreuse est orientée et une zone dans laquelle la substance inorganique fibreuse n'est pas orientée ; et en ce que, dans ladite section, l'épaisseur de la zone dans laquelle la substance inorganique fibreuse est orientée ne représente pas plus de 50 % de l'épaisseur totale du réflecteur. L'invention concerne un substrat de montage de semi-conducteurs optiques et un dispositif électroluminescent semi-conducteur comportant un réflecteur qui ne se gauchit pas en chauffant ou similaire.
PCT/JP2015/059785 2014-04-03 2015-03-27 Dispositif électroluminescent semi-conducteur et substrat de montage de semi-conducteurs optiques WO2015152098A1 (fr)

Applications Claiming Priority (2)

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JP2014077115A JP2015198226A (ja) 2014-04-03 2014-04-03 半導体発光装置及び光半導体実装用基板
JP2014-077115 2014-04-03

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WO2015152098A1 true WO2015152098A1 (fr) 2015-10-08

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010080793A (ja) * 2008-09-26 2010-04-08 Toyoda Gosei Co Ltd 光反射部材及び発光装置
JP2013166926A (ja) * 2012-01-17 2013-08-29 Dainippon Printing Co Ltd 電子線硬化性樹脂組成物、リフレクター用樹脂フレーム、リフレクター、半導体発光装置、及び成形体の製造方法
JP2013235872A (ja) * 2012-05-02 2013-11-21 Dainippon Printing Co Ltd 樹脂付リードフレーム、多面付ｌｅｄパッケージ、樹脂付リードフレームの製造方法およびｌｅｄパッケージの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010080793A (ja) * 2008-09-26 2010-04-08 Toyoda Gosei Co Ltd 光反射部材及び発光装置
JP2013166926A (ja) * 2012-01-17 2013-08-29 Dainippon Printing Co Ltd 電子線硬化性樹脂組成物、リフレクター用樹脂フレーム、リフレクター、半導体発光装置、及び成形体の製造方法
JP2013235872A (ja) * 2012-05-02 2013-11-21 Dainippon Printing Co Ltd 樹脂付リードフレーム、多面付ｌｅｄパッケージ、樹脂付リードフレームの製造方法およびｌｅｄパッケージの製造方法

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