WO2015076010A1 - 被エッチング層をエッチングする方法 - Google Patents
被エッチング層をエッチングする方法 Download PDFInfo
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- WO2015076010A1 WO2015076010A1 PCT/JP2014/074922 JP2014074922W WO2015076010A1 WO 2015076010 A1 WO2015076010 A1 WO 2015076010A1 JP 2014074922 W JP2014074922 W JP 2014074922W WO 2015076010 A1 WO2015076010 A1 WO 2015076010A1
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- gas
- etching
- processing
- layer
- plasma
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- 238000005530 etching Methods 0.000 title claims abstract description 122
- 238000000034 method Methods 0.000 title claims abstract description 53
- 239000007789 gas Substances 0.000 claims abstract description 355
- 238000012545 processing Methods 0.000 claims abstract description 180
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052786 argon Inorganic materials 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 16
- 229910052756 noble gas Inorganic materials 0.000 claims abstract description 12
- 238000002844 melting Methods 0.000 claims abstract description 6
- 230000008018 melting Effects 0.000 claims abstract description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 50
- 229910019041 PtMn Inorganic materials 0.000 claims description 7
- 230000008569 process Effects 0.000 description 18
- 230000005291 magnetic effect Effects 0.000 description 17
- 150000002500 ions Chemical class 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000012546 transfer Methods 0.000 description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 239000003507 refrigerant Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000007795 chemical reaction product Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910003321 CoFe Inorganic materials 0.000 description 2
- 229910019236 CoFeB Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000003302 ferromagnetic material Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910018936 CoPd Inorganic materials 0.000 description 1
- 229910018979 CoPt Inorganic materials 0.000 description 1
- -1 IrMn Inorganic materials 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- IGOJMROYPFZEOR-UHFFFAOYSA-N manganese platinum Chemical compound [Mn].[Pt] IGOJMROYPFZEOR-UHFFFAOYSA-N 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
- H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
Definitions
- Embodiments of the present invention relate to a method for etching a layer to be etched.
- an MRAM Magnetic Random Access Memory
- MTJ Magnetic Tunnel Junction
- the MRAM element includes a multilayer film when it is made of a difficult-to-etch material containing a metal such as a ferromagnetic material.
- a PtMn (platinum manganese) layer may be etched using a mask containing Ta (tantalum).
- Ta tantalum
- a halogen gas has been conventionally used.
- reaction products are deposited on the side wall surface of the shape formed by the etching. Moreover, since this reaction product has a high melting point, it is difficult to vaporize. If such deposits are not deposited and removed on the sidewall surface of the MTJ structure of the MRAM device, the function of the MRAM device is impaired.
- the present inventor has attempted to use a processing gas containing methane gas and argon gas as an etching gas in order to facilitate removal of the reaction product in a later treatment process.
- the etching used to manufacture the MRAM element has three requirements: (1) high verticality of the shape formed by the etching, and (2) reaction product deposited on the side wall surface of the shape. (3) A high etching selectivity ratio of the layer to be etched with respect to the mask is required.
- the verticality and selectivity can be improved by increasing the amount of methane gas.
- the amount of deposit increases.
- the amount of methane gas is reduced, the amount of deposits can be reduced, but the verticality and selectivity are reduced.
- the processing gas including methane gas and argon gas has a limit in satisfying the three requirements at the same time.
- a method for etching an etching target layer of an object to be processed has a mask on the layer to be etched.
- the to-be-etched layer and the mask are made of a material whose etching efficiency by the rare gas plasma having an atomic number larger than the atomic number of argon is higher than the etching efficiency by the argon gas plasma.
- the mask is made of a material having a melting point higher than that of the layer to be etched.
- the method includes exposing the object to be processed to a plasma of a first processing gas containing a first rare gas having an atomic number larger than the atomic number of argon (a).
- the rare gas having an atomic number larger than the atomic number of argon, that is, the plasma of the first rare gas has a high sputtering efficiency, that is, an etching efficiency, for a material having a relatively large atomic number. Therefore, the plasma of the first processing gas containing the first rare gas can form a shape with higher perpendicularity than the plasma of the processing gas containing argon gas, and removes a lot of deposits. Can do. However, the plasma of the first processing gas is inferior in selectivity to the mask.
- the rare gas having an atomic number smaller than that of argon, that is, the plasma of the second rare gas has a low sputtering efficiency, that is, an etching efficiency. Therefore, the plasma of the second processing gas containing the second rare gas has a low etching efficiency with respect to a material having a large atomic number. However, the plasma of the second processing gas is excellent in selectivity with respect to the mask.
- the perpendicularity of the shape formed by etching is improved in the step of exposing the object to be processed to the plasma of the first processing gas, and deposits on the side wall surface of the shape can be reduced.
- the present method improves the etching selectivity of the etching target layer with respect to the mask by exposing the target object to the plasma of the second processing gas. By sequentially performing these two steps, the present method can simultaneously satisfy the above three requirements.
- An example of the layer to be etched is a PtMn layer, and an example of the mask is a mask containing Ta. Further, the first processing gas and the second processing gas may further contain methane gas.
- the shape has high verticality, and the amount of deposits deposited on the side wall surface of the shape is small. It is possible to simultaneously satisfy the etching selectivity ratio of the etching target layer with respect to the mask.
- FIG. 1 is a flowchart showing an embodiment of a method for etching a layer to be etched.
- the method MT shown in FIG. 1 includes a process ST1 and a process ST2.
- step ST1 an object to be processed (hereinafter referred to as a “wafer”) having an etching target layer is exposed to plasma of a first processing gas containing a first rare gas.
- step ST2 the wafer is exposed to the plasma of the second processing gas containing the second rare gas.
- these steps ST1 and ST2 may be performed alternately and repeatedly.
- the first rare gas contained in the first process gas is a rare gas having an atomic number larger than the atomic number of the argon gas, for example, Kr gas.
- the second rare gas contained in the second process gas is a rare gas having an atomic number smaller than the atomic number of the argon gas, for example, Ne gas.
- the first processing gas and the second processing gas may further include methane gas and hydrogen gas.
- the wafer to which the method MT is applied has a layer to be etched and a mask provided on the layer to be etched.
- the to-be-etched layer and the mask are made of a material whose etching efficiency by the rare gas plasma having an atomic number larger than the atomic number of argon is higher than the etching efficiency by the argon gas plasma.
- the mask is made of a material having a melting point higher than that of the layer to be etched.
- the to-be-etched layer and the mask can be made of any material.
- the mask may include a film composed of TiN, Ta, Ti, TaN, or W.
- the etched layer can be a layer made of PtMn, IrMn, CoPd, CoPt, Ru, Mgo, CoFeB, CoFe, or Ni.
- the etching target layer is etched by the first processing gas in the step ST1.
- a rare gas having an atomic number greater than the atomic number of argon that is, a plasma of the first rare gas
- the plasma of the first processing gas is inferior in selectivity to the mask.
- the rare gas having an atomic number smaller than that of argon, that is, the plasma of the second rare gas has a low sputtering efficiency, that is, an etching efficiency. Therefore, the plasma of the second processing gas containing the second rare gas has a low etching efficiency with respect to a material having a large atomic number.
- the plasma of the second processing gas is excellent in selectivity with respect to the mask.
- FIG. 10 is a graph showing the sputtering yield of each of Ne, Ar, and Kr. Specifically, the graph shown in FIG. 10 shows the efficiency at which each of Ne ions, Ar ions, and Kr ions having an incident energy of 3000 ev etches an etching target layer composed of different metals, that is, sputter yield SY (atom / ion) is calculated.
- the sputter yield SY is the number of metal atoms released from the etching target layer when one ion enters the etching target layer.
- the horizontal axis indicates the type of metal atom
- the vertical axis indicates the sputter yield SY.
- Kr ions have a high sputter yield SY, that is, a high sputter efficiency with respect to metals that can constitute the etching target layer, such as Pt, Mn, Mg, F, Co, and Ru. Yes.
- Kr ions have one or more sputter yields SY with respect to Ti or Ta constituting the mask. Therefore, the first processing gas containing the first rare gas such as Kr can form a highly perpendicular shape in the etching target layer, and can remove a lot of deposits. However, the first process gas is inferior in selectivity to the mask.
- Ne ions have one or more sputter yields SY that are low relative to metals that can constitute the layer to be etched, such as Pt, Mn, Mg, F, Co, and Ru. Further, Ne ions have a sputter yield SY smaller than 1 with respect to Ti or Ta that can form a mask. Therefore, the second processing gas containing the second rare gas such as Ne has a low etching efficiency with respect to the metal that can form the etching target layer, but can etch the metal. Also, the second process gas does not substantially etch the mask.
- the verticality of the shape formed by etching is improved by exposing the wafer to the plasma of the first processing gas, and the shape with respect to the sidewall surface of the shape is improved. It becomes possible to reduce the amount of deposits. Further, the etching selectivity of the etching target layer with respect to the mask can be improved by the step of exposing the target object to the plasma of the second processing gas. Therefore, according to the method MT, by sequentially performing these two steps, three requirements are satisfied: (1) high verticality of the shape formed by etching, and (2) deposition on the side wall surface of the shape. It is possible to satisfy the small amount of the object and (3) the high etching selectivity of the etching target layer with respect to the mask.
- FIG. 2 is a diagram illustrating an example of an object to be processed to which the method MT is applied.
- An example of the object to be processed shown in FIG. 2, that is, the wafer W is a product obtained in the middle of manufacturing the MRAM element having the MTJ structure.
- the wafer W has a base layer 100, a layer to be etched 102, an MTJ structure 104, and an upper layer 106.
- the underlayer 100 is a layer that serves as a lower electrode, and can be made of Ta, and has a thickness of 3 nm.
- the to-be-etched layer 102 is provided on the base layer 100.
- the layer to be etched 102 is a layer that becomes a pinning layer, and is made of PtMn, and has a thickness of 20 nm.
- the upper layer 106 is provided above the etching target layer 102, and includes Ta in one example. The thickness of the upper layer 106 is, for example, 50 nm.
- the MTJ structure 104 is provided between the etching target layer 102 and the upper layer 106, and is composed of a multilayer film containing a metal such as a ferromagnetic material.
- the MTJ structure 104 is configured to include an insulating layer 104c between the first magnetic layer 104a and the second magnetic layer 104b.
- the first magnetic layer 104a and the second magnetic layer 104b are made of, for example, CoFeB, and each has a thickness of 2.5 nm.
- the insulating layer 104c is, for example, a metal oxide layer such as an MgO layer, an aluminum oxide layer, or a titanium oxide layer, and has a thickness of 1 to 2 nm.
- the wafer W can further include a magnetic layer 107 and a magnetic layer 108.
- the magnetic layer 107 is provided on the etching target layer 102 and can be made of, for example, CoFe.
- the magnetic layer 108 is provided between the magnetic layer 107 and the MTJ structure 104, and is made of, for example, Ru and has a thickness of 0.8 nm.
- the etching target layer 102 of the wafer W is an example of an etching target of the method MT.
- a stacked structure including the upper layer 106, the MTJ structure 104, the magnetic layer 107, and the magnetic layer 108 is a mask. As a result, the etching target layer 102 is etched.
- FIG. 3 is a diagram illustrating an example of a plasma processing apparatus.
- a plasma processing apparatus 10 shown in FIG. 3 is a capacitively coupled plasma processing apparatus.
- the method MT can be performed using any plasma processing apparatus such as an inductively coupled plasma processing apparatus or a plasma processing apparatus using surface waves such as microwaves.
- the plasma processing apparatus 10 includes a processing container 12.
- the processing container 12 has a substantially cylindrical shape and defines a processing space S as its internal space.
- the plasma processing apparatus 10 includes a substantially disk-shaped base 14 in a processing container 12.
- the base 14 is provided below the processing space S.
- the base 14 is made of, for example, aluminum and constitutes a lower electrode.
- the base 14 has a function of absorbing the heat of the electrostatic chuck 50 described later in the process and cooling the electrostatic chuck 50.
- a refrigerant flow path 15 is formed inside the base 14, and a refrigerant inlet pipe and a refrigerant outlet pipe are connected to the refrigerant flow path 15.
- an appropriate refrigerant such as cooling water is circulated through the refrigerant flow path 15.
- the base 14 and the electrostatic chuck 50 are controlled to a predetermined temperature.
- the plasma processing apparatus 10 further includes a cylindrical holding portion 16 and a cylindrical support portion 17.
- the cylindrical holding portion 16 holds the base 14 in contact with the side and bottom edges of the base 14.
- the cylindrical support portion 17 extends in the vertical direction from the bottom portion of the processing container 12 and supports the base 14 via the cylindrical holding portion 16.
- the plasma processing apparatus 10 further includes a focus ring 18 placed on the upper surface of the cylindrical holder 16.
- the focus ring 18 can be made of, for example, silicon or quartz.
- an exhaust path 20 is formed between the side wall of the processing vessel 12 and the cylindrical support portion 17.
- a baffle plate 22 is attached to the inlet of the exhaust passage 20 or in the middle thereof.
- An exhaust port 24 is provided at the bottom of the exhaust path 20.
- the exhaust port 24 is defined by an exhaust pipe 28 fitted in the bottom of the processing container 12.
- An exhaust device 26 is connected to the exhaust pipe 28.
- the exhaust device 26 has a vacuum pump and can depressurize the processing space S in the processing container 12 to a predetermined degree of vacuum.
- a gate valve 30 for opening and closing the loading / unloading port for the wafer W is attached to the side wall of the processing chamber 12.
- the base 14 is electrically connected to a high frequency power source 32 for ion attraction through a matching unit 34.
- the high frequency power supply 32 applies a high frequency bias power of a frequency suitable for ion attraction, for example, 400 KHz, to the lower electrode, that is, the base 14.
- the plasma processing apparatus 10 further includes a shower head 38.
- the shower head 38 is provided above the processing space S.
- the shower head 38 includes an electrode plate 40 and an electrode support 42.
- the electrode plate 40 is a conductive plate having a substantially disk shape and constitutes an upper electrode.
- a high frequency power source 35 for plasma generation is electrically connected to the electrode plate 40 via a matching unit 36.
- the high frequency power supply 35 supplies a plasma generation frequency, for example, a high frequency power of 60 MHz to the electrode plate 40.
- a high frequency electric field is formed in the space between the base 14 and the electrode plate 40, that is, the processing space S.
- the electrode plate 40 has a plurality of gas vent holes 40h.
- the electrode plate 40 is detachably supported by an electrode support 42.
- a buffer chamber 42 a is provided inside the electrode support 42.
- the plasma processing apparatus 10 further includes a gas supply unit 44, and the gas supply unit 44 is connected to the gas introduction port 25 of the buffer chamber 42 a through a gas supply conduit 46.
- the gas supply unit 44 supplies a processing gas to the processing space S.
- the gas supply unit 44 can supply a plurality of types of gases. In one embodiment, the gas supply unit 44 can supply methane gas, first rare gas, second rare gas, and hydrogen gas.
- the electrode support 42 is formed with a plurality of holes that are respectively continuous with the plurality of gas vent holes 40h, and the plurality of holes communicate with the buffer chamber 42a. Therefore, the gas supplied from the gas supply unit 44 is supplied to the processing space S via the buffer chamber 42a and the gas vent 40h.
- a magnetic field forming mechanism 48 extending in a ring shape or concentric shape is provided on the ceiling portion of the processing container 12 of the plasma processing apparatus 10.
- the magnetic field forming mechanism 48 functions to facilitate the start of high-frequency discharge (plasma ignition) in the processing space S and maintain stable discharge.
- the electrostatic chuck 50 is provided on the upper surface of the base 14.
- the electrostatic chuck 50 includes an electrode 52 and a pair of insulating films 54a and 54b.
- the insulating films 54a and 54b are films formed of an insulator such as ceramic.
- the electrode 52 is a conductive film and is provided between the insulating film 54a and the insulating film 54b.
- a direct current power source 56 is connected to the electrode 52 via a switch SW. When a DC voltage is applied to the electrode 52 from the DC power source 56, a Coulomb force is generated, and the wafer W is attracted and held on the electrostatic chuck 50 by the Coulomb force.
- a heater which is a heating element, is embedded inside the electrostatic chuck 50 so that the wafer W can be heated to a predetermined temperature. The heater is connected to a heater power supply via wiring.
- the plasma processing apparatus 10 further includes gas supply lines 58 and 60 and heat transfer gas supply units 62 and 64.
- the heat transfer gas supply unit 62 is connected to a gas supply line 58.
- the gas supply line 58 extends to the upper surface of the electrostatic chuck 50 and extends in an annular shape at the central portion of the upper surface.
- the heat transfer gas supply unit 62 supplies a heat transfer gas such as He gas between the upper surface of the electrostatic chuck 50 and the wafer W, for example.
- the heat transfer gas supply unit 64 is connected to the gas supply line 60.
- the gas supply line 60 extends to the upper surface of the electrostatic chuck 50 and extends in an annular shape so as to surround the gas supply line 58 on the upper surface.
- the heat transfer gas supply unit 64 supplies a heat transfer gas such as He gas between the upper surface of the electrostatic chuck 50 and the wafer W, for example.
- the plasma processing apparatus 10 further includes a control unit 66.
- the control unit 66 is connected to the exhaust device 26, the switch SW, the high frequency power source 32, the matching unit 34, the high frequency power source 35, the matching unit 36, the gas supply unit 44, and the heat transfer gas supply units 62 and 64.
- the control unit 66 sends control signals to the exhaust device 26, the switch SW, the high frequency power supply 32, the matching unit 34, the high frequency power source 35, the matching unit 36, the gas supply unit 44, and the heat transfer gas supply units 62 and 64, respectively. To do.
- the plasma processing apparatus 10 can selectively supply the first processing gas and the second processing gas from the gas supply unit 44 to the processing space S.
- a processing gas such as the first processing gas and the second processing gas
- a high-frequency electric field is formed between the electrode plate 40 and the base 14, that is, in the processing space S.
- plasma is generated. Etching of the etching target layer of the wafer W is performed by the active species of the elements contained in the processing gas.
- the etched layer 102 was a PtMn layer having a thickness of 20 nm.
- the upper layer 106 was a Ta layer, and the total thickness of the upper layer 106 and the MTJ structure 104 was about 50 nm.
- FIG. 4 is a graph showing the etching efficiency of the etching target layer according to the type of rare gas.
- the etching efficiency in FIG. 4 is obtained by changing the rare gas in the processing gas. Specifically, three types of argon (Ar) gas, Kr gas, and Ne gas were used as the rare gas. Other conditions when the etching efficiency in FIG. 4 is obtained are as follows.
- the horizontal axis indicates the type of the rare gas in the processing gas in the processing gas
- the vertical axis indicates the etching rate when the processing gas containing Ar gas is “1”.
- the etching rate that is, the etching efficiency in the case of using a processing gas containing other rare gas is shown.
- the processing gas containing Kr gas has higher etching efficiency for the etching target layer 102 than the processing gas containing Ar gas, while the etching gas containing Ne gas is used for etching the etching target layer 102. It is confirmed that the efficiency is low.
- FIG. 5 is a diagram showing three graphs showing the influence of the type of the rare gas and the shape of the etching time.
- the data shown in FIG. 5 shows the etching time dependency of the shape when the etching target layer 102 is etched under the same conditions as the data acquisition conditions of FIG.
- FIG. 5A shows the relationship between the etching time (horizontal axis) and the angle ⁇ (vertical axis).
- FIG. 5B shows the relationship between the etching time (horizontal axis) and the deposit thickness DA (vertical axis).
- FIG. 5C shows the relationship between the etching time (horizontal axis) and the thickness MH of the mask MK after etching. As shown in FIG.
- the angle ⁇ is an angle formed by the side wall surface of the etched layer 102 after etching with respect to the base layer.
- the thickness DA of the deposit is the horizontal thickness of the deposit DP left along the side wall surface of the mask MK after the etching.
- the thickness MH is the thickness in the film thickness direction of the mask MK left after etching.
- the legend “Ar gas” indicates data when a processing gas containing Ar gas is used
- the legend “Kr gas” indicates data when a processing gas containing Kr gas is used.
- the legend “Ne gas” indicates data when a processing gas containing Ar gas is used.
- the deposit DP has a large thickness DA while the treatment gas containing Kr gas is used when any of the treatment gas containing Ne gas and the treatment gas containing Ar gas is used.
- the gas it is confirmed that the thickness DA of the deposit DP tends to decrease in proportion to the length of the etching time. Therefore, it is confirmed that the amount of deposits can be reduced by using a processing gas containing Kr gas as a rare gas.
- the thickness MH of the mask MK is reduced, while when the processing gas containing Ne gas is used, the mask is reduced. It is confirmed that the thickness MH of the MK increases. Therefore, when a processing gas containing Ne gas is used, the thickness of the mask MK can be maintained, that is, the selectivity of the etching target layer 102 with respect to the mask MK can be increased. It is confirmed.
- FIG. 7A shows a cross-sectional view of the state of the wafer after etching when a processing gas containing Ar gas is used
- FIG. 7B shows a processing gas containing Ne gas
- FIG. 7C shows a cross-sectional view of the state of the wafer after etching when a processing gas containing Kr gas is used. It is shown.
- the processing gas containing Kr gas is used in contrast to the tendency in the case of using a processing gas containing Ar gas (see FIG. 7A), as shown in FIG. 7C.
- the verticality of the sidewalls of the layer 102 can be increased and the amount of deposit DP can be reduced.
- the film thickness of the mask MK is reduced and the shoulder of the mask MK is also sharpened.
- the verticality of the sidewall of the etching target layer 102 is increased by using the processing gas containing Ne gas.
- the film thickness of the mask MK can be maintained although the amount of the deposit DP is increased and the amount of the deposit DP is increased. That is, the selectivity of the etching target layer 102 with respect to the mask MK can be increased by using a processing gas containing Ne gas.
- FIG. 8 is a diagram showing three graphs showing the influence of the type of rare gas and the flow rate of methane gas on the shape.
- the data shown in FIG. 8 was acquired by changing the flow rate of methane gas in the processing gas based on the conditions for data acquisition in FIG. Specifically, FIG. 8A shows the relationship between the flow rate ratio (horizontal axis) of methane gas in the processing gas and the angle ⁇ (vertical axis). 8B shows the relationship between the flow rate ratio of methane gas in the processing gas (horizontal axis) and the thickness DA (vertical axis) of the deposit.
- FIG. 8A shows the relationship between the flow rate ratio (horizontal axis) of methane gas in the processing gas and the angle ⁇ (vertical axis).
- 8B shows the relationship between the flow rate ratio of methane gas in the processing gas (horizontal axis) and the thickness DA (vertical axis) of the deposit.
- FIG. 8A shows the relationship between the flow rate ratio
- FIG. 8C shows the relationship between the flow rate ratio of methane gas in the processing gas (horizontal axis) and the thickness MH of the mask MK after etching.
- the legend “Ar gas” indicates data when a processing gas containing Ar gas is used
- the legend “Kr gas” indicates data when a processing gas containing Kr gas is used. Show.
- FIG. 9 is a diagram showing three graphs showing influences on the type of rare gas and the shape of the high-frequency bias power.
- the data shown in FIG. 9 was acquired by changing the high frequency bias power based on the data acquisition conditions of FIG.
- FIG. 9A shows the relationship between the etching time (horizontal axis) and the angle ⁇ (vertical axis).
- FIG. 9B shows the relationship between the etching time (horizontal axis) and the deposit thickness DA (vertical axis).
- FIG. 9C shows the relationship between the etching time (horizontal axis) and the thickness MH of the mask MK after etching.
- FIG. 9A shows the relationship between the etching time (horizontal axis) and the angle ⁇ (vertical axis).
- FIG. 9B shows the relationship between the etching time (horizontal axis) and the deposit thickness DA (vertical axis).
- FIG. 9C shows the relationship between the etching time (horizontal axis
- the legend “Ar (1500 W)” indicates data when a high-frequency bias power of 1500 W is supplied using a processing gas containing Ar gas, and the legend “Kr (1500 W)” is Kr.
- the data when a high-frequency bias power of 1500 W is supplied using a processing gas containing gas is shown, and the legend “Kr (1000 W)” supplies a high-frequency bias power of 1000 W using a processing gas containing Kr gas. Shows the case data.
- the angle ⁇ can be increased by increasing the high-frequency bias power, that is, the verticality can be improved. It is confirmed that it is possible. In addition, it is confirmed that even with the same high-frequency bias power, it is possible to obtain high verticality by using a processing gas containing Kr gas, as compared with the case of using a processing gas containing Ar gas. Is done. Further, even when a low high-frequency bias power (1000 W) is used, a vertical gas equivalent to the case where a processing gas containing Kr gas is used, a processing gas containing Ar gas is used, and a high high-frequency bias power (1500 W) is used. It is confirmed that it is possible to obtain sex.
- the amount of deposits can be reduced by using the processing gas containing Kr gas as compared with the processing gas containing Ar gas. It is confirmed that Further, referring to FIG. 9C, by reducing the high-frequency bias power (1000 W), even when a processing gas containing Kr gas is used, the level is the same as that when a processing gas containing Ar gas is used. It is confirmed that the film thickness of the mask MK can be maintained. That is, it is confirmed that even if a processing gas containing Kr gas is used, it is possible to realize the selectivity equivalent to the processing gas containing Ar gas.
- the verticality can be improved as compared with the processing gas containing Ar gas. And the amount of deposits can be reduced.
- the first processing gas containing the first rare gas it is possible to maintain the thickness of the mask MK at the same level as the processing gas containing Ar gas, that is, to obtain selectivity. It is.
- the second processing gas containing the second rare gas such as Ne gas, the selectivity can be improved as compared with the case of using the processing gas containing Kr gas or Ar gas. Therefore, by sequentially performing the process ST1 and the process ST2, it is possible to satisfy three requirements, that is, improvement in verticality, a small amount of deposits, and improvement in selectivity.
- the method MT was applied using the plasma processing apparatus 10 to the same wafer at the time of data acquisition in FIG.
- the etching target layer 102 of the same wafer was etched using only a processing gas containing Ar gas.
- the etching target layer 102 of the same wafer was etched using only a processing gas containing Kr gas.
- the conditions of the experimental example, the first reference example, and the second reference example are shown below.
- the thickness DA of the deposit, and the thickness MH of the mask MK after etching in each of the experimental example, the first reference example, and the second reference example It is confirmed that the verticality of an impossible level can be realized when only the processing gas using Ar gas is used (first reference example), and the amount of deposits can be reduced. Further, in the method MT, the thickness is larger than when only the processing gas containing Kr gas is used (second reference example), and the same thickness as when only the processing gas using Ar gas is used (first reference example). Thus, it was confirmed that the mask MK can be maintained, that is, it is possible to obtain the same selectivity as when only the processing gas using Ar gas is used.
- the first processing gas and the second processing gas contain methane and hydrogen gas, but as long as they contain the first noble gas and the second noble gas, respectively, and contain carbon and hydrogen,
- the first processing gas and the second processing gas may include any gas.
- the layer made of PtMn is exemplified as the etching target layer 102, but the etching target layer to be etched in the method MT can be etched using the upper layer 106 as a mask.
- Another layer for example, a layer included in the MTJ structure 104, the magnetic layer 107, and / or the magnetic layer 108 may be used.
- DESCRIPTION OF SYMBOLS 10 Plasma processing apparatus, 12 ... Processing container, 32 ... High frequency power supply (for high frequency bias power supply), W ... Wafer, 100 ... Underlayer, 102 ... Etched layer, 104 ... MTJ structure, 106 ... Upper layer, MK ... Mask , DP ... deposit, MT ... method, ST1 ... step, ST2 ... step.
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Abstract
Description
<条件>
・処理容器12内圧力:10mTorr(1.333Pa)
・プラズマ生成用高周波電力:800W
・高周波バイアス電力:1500W
・処理ガス中の水素ガス流量:300sccm
・処理ガス中のメタンガス流量:90sccm
・処理ガス中の希ガスの流量:50sccm
・ウエハ温度:-20℃
<実験例の条件>
・処理容器12内圧力:10mTorr(1.333Pa)
・プラズマ生成用高周波電力:800W
・高周波バイアス電力:1500W
・第1の処理ガス及び第2の処理ガス中の水素ガス流量:300sccm
・第1の処理ガス及び第2の処理ガス中のメタンガス流量:90sccm
・第1の処理ガス及び第2の処理ガス中の希ガスの流量:50sccm
・第1の希ガス:Kr
・第2の希ガス:Ne
・ウエハ温度:-20℃
・工程ST1の時間:10秒
・工程ST2の時間:10秒
・工程ST1及び工程ST2からなるシーケンスの繰り返し回数:5回
<第1参考例の条件>
・処理容器12内圧力:10mTorr(1.333Pa)
・プラズマ生成用高周波電力:800W
・高周波バイアス電力:1500W
・処理ガス中の水素ガス流量:300sccm
・処理ガス中のメタンガス流量:90sccm
・処理ガス中のArガスの流量:50sccm
・ウエハ温度:-20℃
・エッチング時間:130秒
<第2参考例の条件>
・処理容器12内圧力:10mTorr(1.333Pa)
・プラズマ生成用高周波電力:800W
・高周波バイアス電力:1500W
・処理ガス中の水素ガス流量:300sccm
・処理ガス中のメタンガス流量:90sccm
・処理ガス中のKrガスの流量:50sccm
・ウエハ温度:-20℃
・エッチング時間:130秒
<実験例>
θ:83度
DA:1.5nm
MH:35.1nm
<第1参考例>
θ:81.5度
DA:4.0nm
MH:36.0nm
<第2参考例>
θ:84度
DA:0nm
MH:24.2nm
Claims (4)
- 被処理体の被エッチング層をエッチングする方法であって、
前記被処理体は、前記被エッチング層上にマスクを有しており、
前記被エッチング層及び前記マスクは、アルゴンの原子番号よりも大きい原子番号を有する希ガスのプラズマによるエッチング効率が、アルゴンガスのプラズマによるエッチング効率よりも高い材料から構成されており、
前記マスクは、前記被エッチング層の融点よりも高い融点を有する材料から構成されており、
該方法は、
アルゴンの原子番号よりも大きい原子番号を有する第1の希ガスを含む第1の処理ガスのプラズマに前記被処理体を晒す工程と、
アルゴンの原子番号よりも小さい原子番号を有する第2の希ガスを含む第2の処理ガスのプラズマに前記被処理体を晒す工程と、
を含む方法。 - 前記第1の処理ガスのプラズマに前記被処理体を晒す前記工程と前記第2の処理ガスのプラズマに前記被処理体を晒す工程が、交互に繰り返される、請求項1に記載の方法。
- 前記被エッチング層はPtMnを含み、前記マスクはTaを含む、請求項1又は2に記載の方法。
- 前記第1の処理ガス及び前記第2の処理ガスは、メタンガスを更に含む、請求項1~3の何れか一項に記載の方法。
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US9870899B2 (en) | 2015-04-24 | 2018-01-16 | Lam Research Corporation | Cobalt etch back |
US9972504B2 (en) | 2015-08-07 | 2018-05-15 | Lam Research Corporation | Atomic layer etching of tungsten for enhanced tungsten deposition fill |
US10566212B2 (en) | 2016-12-19 | 2020-02-18 | Lam Research Corporation | Designer atomic layer etching |
JP6552477B2 (ja) * | 2016-12-22 | 2019-07-31 | 東京エレクトロン株式会社 | エッチング方法 |
US10832909B2 (en) | 2017-04-24 | 2020-11-10 | Lam Research Corporation | Atomic layer etch, reactive precursors and energetic sources for patterning applications |
US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
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