WO2015043261A1 - 光刻胶的去除方法、曝光装置以及显示基板的制造方法 - Google Patents
光刻胶的去除方法、曝光装置以及显示基板的制造方法 Download PDFInfo
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- WO2015043261A1 WO2015043261A1 PCT/CN2014/080894 CN2014080894W WO2015043261A1 WO 2015043261 A1 WO2015043261 A1 WO 2015043261A1 CN 2014080894 W CN2014080894 W CN 2014080894W WO 2015043261 A1 WO2015043261 A1 WO 2015043261A1
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- Prior art keywords
- photoresist
- substrate
- exposure
- patterning process
- light source
- Prior art date
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 289
- 239000000758 substrate Substances 0.000 title claims abstract description 220
- 238000000034 method Methods 0.000 title claims abstract description 176
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 238000000059 patterning Methods 0.000 claims abstract description 89
- 239000010408 film Substances 0.000 claims description 60
- 239000000463 material Substances 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 14
- 238000004380 ashing Methods 0.000 claims description 9
- 239000000126 substance Substances 0.000 abstract description 6
- 238000005530 etching Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 239000002184 metal Substances 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 206010034960 Photophobia Diseases 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000010146 3D printing Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
Definitions
- the present disclosure relates to a method of removing a photoresist, an exposure apparatus, and a method of manufacturing a display substrate. Background technique
- the fabrication process of the array substrate is usually performed by photolithography.
- the specific fabrication process is as follows: a layer of photoresist is coated on the substrate; the photoresist is exposed and developed to form a desired pattern; and the substrate is formed according to the formed pattern. Etching treatment; the remaining photoresist is stripped by a stripping device to form an array substrate.
- the principle of peeling off the photoresist on the substrate by the stripping device is that the photoresist is dissolved by the stripping liquid of the stripping device to achieve the purpose of stripping the photoresist. Therefore, in the actual production process, it is necessary to separately provide a stripping device to strip the photoresist.
- the channel is mainly fabricated by an ashing process, and the ashing process is as follows: coating a layer of photoresist on the substrate; performing semi-exposure processing and development processing on the photoresist, removing Setting a thickness of the photoresist corresponding to the position of the channel pattern; then using a high-power device to react the chemical gas with the remaining photoresist corresponding to the position of the channel pattern, and removing the remaining photoresist corresponding to the position of the channel pattern, A desired channel pattern is formed; the photoresist other than the channel pattern is subjected to a lift-off process by a lift-off device to form a channel of the TFT array substrate. Therefore, in the ashing process, it is necessary to configure a high-power device, and it is necessary to react the chemical gas with the photoresist through a high-power device to remove the photoresist of a desired thickness.
- Embodiments of the present invention provide a method for removing a photoresist for removing a photoresist on a substrate after a patterning process, the method comprising: exposing a photoresist on a substrate after a patterning process Processing; and removing the exposed photoresist after development.
- the exposure energy for exposing the photoresist is determined according to the thickness of the photoresist to be removed; and the exposure energy according to the determined exposure process is performed on the substrate after the patterning process The photoresist is subjected to exposure processing.
- the photoresist on the substrate after the patterning process is removed, which is The photoresist on the substrate after the process is subjected to a total stripping treatment, and the thickness of the photoresist to be removed is the maximum thickness of the photoresist on the substrate after the patterning process.
- the photoresist on the substrate after the patterning process is removed, and the photoresist on the substrate after the patterning process is ashed, and the thickness of the photoresist to be removed is processed by a patterning process. A portion of the thickness of the photoresist on the back substrate.
- the exposure energy of the photoresist is exposed, so that the thickness of the removed photoresist reaches a set thickness, and the process adjustment is flexible, and can adapt to different process requirements.
- the exposure intensity of the photoresist for the exposure process is determined according to the thickness of the photoresist to be removed; and the photoresist on the substrate after the patterning process is processed according to the determined exposure intensity of the exposure process Performing an exposure process; or determining a time for exposing the photoresist according to the thickness of the photoresist to be removed; and exposing the photoresist on the substrate after the patterning process according to the determined time of the exposure process deal with.
- the exposing the photoresist on the substrate after the patterning process comprises: exposing the photoresist on the substrate after the patterning process by an exposure light source.
- the exposure light source includes: a white light source or an ultraviolet light source.
- the light source is a strip light source that moves at a uniform speed in a direction parallel to the substrate and illuminates the substrate such that the photoresist on the substrate is exposed to the same extent.
- the light source is a planar light source, and the planar light source is vertically irradiated on the substrate such that the photoresist on the substrate is exposed to the same extent.
- the embodiment of the invention further provides a method for manufacturing a display substrate, comprising the steps of forming a device pattern on a substrate by using a photoresist by a patterning process, and removing the photoresist on the substrate after the patterning process.
- the step of removing the photoresist on the substrate after the patterning process comprises any one of the above photoresist removal methods.
- the step of forming a device pattern on the substrate by using a photoresist by a patterning process comprising: forming a material film layer of the device on the substrate; forming a photoresist film layer on the material film layer of the device;
- the mold exposes and develops the photoresist film layer, removes a portion of the photoresist to expose a portion of the material film layer, and another portion of the photoresist remains on the substrate after the patterning process; a portion of the exposed material film layer Etching is performed to form a device pattern.
- the display substrate is a thin film transistor array substrate.
- the thin film transistor array substrate includes a thin film transistor, a pixel electrode, a gate line, and a data line.
- the device pattern is a pattern of gates, active layers, source and drain electrodes, pixel electrodes, gate lines, or data lines in a thin film transistor.
- An embodiment of the present invention further provides an exposure apparatus including an exposure light source, wherein the exposure light source includes a mask exposure light source and a photoresist removal exposure light source, wherein the mask exposure light source is used to perform a film layer on the substrate by using the mask plate. Irradiating the film layer during the mask exposure process; the photoresist removing exposure light source is used for light on the substrate after the patterning process in any one of the methods of using the photoresist removing method or the display substrate The photoresist on the substrate after the patterning process is irradiated while the gel is removed.
- Figure la is a schematic view of a substrate after a patterning process in an embodiment of the present invention.
- Figure lb is a schematic view showing that all of the photoresist on the substrate after the patterning process is exposed in the embodiment of the present invention
- Figure lc is a schematic view of the photoresist after peeling off on the substrate after the patterning process in the embodiment of the present invention.
- FIG. 2a is a schematic view of a substrate coated with a photoresist in an embodiment of the present invention
- FIG. 2b is a schematic view of a substrate after exposure processing of a photoresist film on a substrate according to an embodiment of the invention
- FIG. 2c is a schematic diagram of a substrate after a photoresist film is formed into a desired pattern according to an embodiment of the present invention
- FIG. 2 is a schematic diagram of a substrate on which a metal film on a substrate is etched to form a desired pattern according to an embodiment of the present invention
- 2e is a schematic view of a substrate after exposure processing of an unexposed photoresist film in an embodiment of the present invention
- FIG. 2f is a schematic view of a substrate for removing a photoresist by using a developing solution according to an embodiment of the present invention
- FIG. 3a is a view showing a first channel pattern formed on a substrate after a patterning process according to an embodiment of the present invention
- Schematic diagram of the rear substrate
- FIG. 3b is a schematic diagram of a substrate after a first exposure treatment of a photoresist on a substrate after a patterning process according to an embodiment of the invention
- 3c is a schematic diagram of a substrate after forming a second channel pattern on a substrate after a patterning process according to an embodiment of the invention
- 3d is a schematic diagram of a substrate for forming a channel pattern by etching a substrate according to a second channel pattern according to an embodiment of the invention
- FIG. 4a is a schematic view showing a substrate coated with a photoresist in a substrate containing a channel according to an embodiment of the present invention
- 4b is a schematic diagram of a substrate including a first channel pattern in a substrate containing a channel according to an embodiment of the invention
- 4C is a schematic diagram of a substrate after performing a second exposure process on a photoresist on a substrate including a first channel pattern in a substrate containing a channel according to an embodiment of the invention
- 4d is a schematic diagram of a substrate having a second channel pattern in a substrate containing a channel according to an embodiment of the invention
- FIG. 4e is a schematic diagram of a substrate after etching a substrate to form a desired pattern in a substrate containing a channel according to an embodiment of the invention
- 4f is a schematic view showing a substrate after exposing an unexposed photoresist film in a substrate containing a channel according to an embodiment of the invention
- 4G is a schematic view showing a substrate for removing a photoresist in a substrate containing a channel according to an embodiment of the present invention; a schematic view of exposure processing of the photoresist; and a schematic view of exposure processing of the photoresist.
- the photoresist on the substrate after the patterning process is exposed; the photoresist after the exposure process is removed by the development process; when the photoresist is stripped in the prior art, A stripping device needs to be configured, and when the photoresist is ashed, high-power equipment and chemical gas are required to be disposed, which saves equipment costs and reduces production costs.
- Embodiments of the present invention provide a method for removing a photoresist for removing a photoresist on a substrate after a patterning process, the method comprising:
- Step 101 performing exposure processing on the photoresist on the substrate after the patterning process;
- Step 102 removing the exposed photoresist by a development process, that is, using the developing product such as a developing solution to expose the photoresist Remove it.
- the photoresist on the substrate after the patterning process in the embodiment of the present invention refers to a photoresist which has a pattern structure after exposure, development and etching in the patterning process.
- a gate pattern is formed on a base substrate
- a gate material film is coated on the base substrate
- a photoresist is coated on the gate material film to form a photoresist film according to an expected gate pattern.
- the patterning process may generally include forming a thin film of a pattern material on the substrate, applying a photoresist on the film of the pattern material, exposing the photoresist to the desired pattern, developing the film, and forming light after exposure and development processing.
- composition process exemplified above is only a preferred embodiment, and the patterning process described in the embodiment of the present invention is not limited to these embodiments, and may include any other type of graphics.
- the patterning of the structure such as the patterning of the pattern structure by techniques such as 3D printing, is also encompassed within the scope of the present invention.
- the development process described in the embodiment of the present invention means: for a positive photoresist, after exposing the photoresist, the exposed photoresist is dissolved by the developer, and the exposed photolithography is removed. Glue, the unexposed photoresist is left behind; the negative photoresist is the opposite, that is, the photoresist is exposed After the treatment, the unexposed photoresist is removed using a developing solution, and the exposed photoresist is left.
- performing exposure processing on the photoresist on the substrate after the patterning process in step 101 includes: determining, according to the thickness of the photoresist to be removed, an exposure energy for exposing the photoresist; The exposure energy of the exposure process is performed, and the photoresist on the substrate after the patterning process is exposed; wherein factors affecting the exposure energy include, but are not limited to, the following factors: exposure intensity, exposure time. That is, the exposure intensity of the photoresist may be determined according to the thickness of the photoresist to be removed; and the photoresist on the substrate after the patterning process is exposed according to the determined exposure intensity of the exposure process. Processing; or determining the time for exposing the photoresist according to the thickness of the photoresist to be removed; and exposing the photoresist on the substrate after the patterning process according to the determined exposure processing time.
- the exposure processing time and the exposure intensity of the exposure processing are proportional to the thickness of the exposed photoresist.
- the longer the exposure treatment the greater the exposure intensity, and the thicker the thickness of the exposed photoresist.
- the photoresists with different compositions have different light sensitivities, the exposure treatment time is the same, or the exposure intensity is the same, and the thickness of the exposed photoresist may be different. Therefore, it is necessary to determine the time of exposure processing or the exposure intensity in accordance with the composition of the photoresist and the thickness of the photoresist to be exposed.
- the exposure process can be divided into two cases, one is that the photoresist on the substrate after the patterning process needs to be stripped, and the other case is that the patterning process is required.
- the photoresist on the processed substrate is subjected to ashing treatment, and the following two cases are separately introduced.
- Case 1 The photoresist on the substrate after the patterning process needs to be stripped.
- the substrate after the patterning process wherein 21 is a substrate, 22 is a metal film, 23 is a photoresist to be removed; and the photoresist 23 on the substrate is exposed by an exposure light source, as shown in FIG.
- the photoresist on the substrate is exposed to the exposure light source, and 24 is the photoresist to be removed after the exposure process, and the exposed substrate is immersed in the developer, for example, for development processing, and the patterning process is removed.
- the photoresist 24 on the subsequent substrate forms a substrate as shown in FIG. 1c, which realizes the stripping of the photoresist and avoids the special arrangement of the photoresist stripping device for stripping the photoresist.
- the thickness of the photoresist to be removed is processed by the patterning process.
- the maximum thickness of the photoresist on the substrate; the exposure time or exposure at this time The intensity can be set according to the maximum thickness of the photoresist on the substrate, or can be adjusted according to the thickness of the photoresist at different positions on the substrate.
- Embodiments of the present invention provide a method for fabricating a substrate, the method comprising:
- Step 301 coating a layer of photoresist on the substrate to form a photoresist film, and the substrate coated with the photoresist is as shown in FIG. 2a, wherein 41 is a substrate, 42 is a metal film, and 43 is a photoresist;
- Step 302 Exposing the photoresist film on the substrate according to the set pattern by using a mask, and the exposed substrate is as shown in FIG. 2b, wherein 43 is an unexposed photoresist, and 44 is set according to the setting.
- Step 303 removing the exposed photoresist 44 by a developing process, forming a desired pattern on the photoresist film, and forming a substrate having a desired pattern on the photoresist film as shown in FIG. 2c;
- Step 304 etching the metal film 42 on the substrate according to the pattern formed on the photoresist film, forming a desired pattern on the substrate, and forming the desired pattern as shown in FIG. 2d; the following steps are as described above Method of removing photoresist:
- Step 305 exposing the unexposed photoresist by an exposure light source, so that the thickness of the exposed photoresist film is the maximum thickness of the photoresist film on the substrate, and after exposing the unexposed photoresist film
- the substrate is as shown in Figure 2e, wherein 45 is the exposed photoresist;
- Step 306 removing the photoresist 45 on the substrate by using a developing solution, for example, by dipping the exposed substrate into the developing solution or spraying the developing solution onto the substrate, and removing the substrate of the photoresist as shown in Fig. 2f.
- a developing solution for example, by dipping the exposed substrate into the developing solution or spraying the developing solution onto the substrate, and removing the substrate of the photoresist as shown in Fig. 2f.
- Case 2 The photoresist on the substrate after the patterning process is subjected to ashing treatment.
- Embodiments of the present invention are described by taking an example of ashing a photoresist on a substrate on which a channel pattern is formed.
- a substrate having a first channel pattern is formed on the photoresist, wherein 51 is a substrate, 52 is a metal film, 53 is a photoresist, and 54 is a first channel pattern; At this time, a photoresist having a certain thickness is left at the first channel pattern 54.
- a known method of removing the remaining photoresist at the first channel pattern 54 includes ejecting a chemical gas through a high efficiency device to completely etch away the remaining photoresist at the first channel pattern 54. And partially etching away the photoresist of the other region on the substrate where the first channel pattern is not formed, wherein the thickness of the photoresist on the etched substrate is not formed in other regions of the first channel pattern, and etching The remaining photoresist at the first channel pattern 54 has the same thickness.
- the method package for removing the remaining photoresist at the first channel pattern 54 in the embodiment of the present invention The first exposure process is performed on the photoresist on the substrate by the exposure light source, so that the thickness of the photoresist on the substrate is exposed to be the thickness of the photoresist remaining at the first channel pattern 54, 55 in FIG. 3b. a photoresist exposed after the first exposure process;
- the formed second channel pattern etches the metal film 52 to form a channel pattern on the substrate, and the substrate forming the channel pattern is as shown in FIG. 3d.
- embodiments of the present invention provide a method of fabricating an array substrate including a thin film transistor having a channel region, the method comprising:
- Step 601 coating a layer of photoresist on the substrate to form a photoresist film, and the substrate coated with the photoresist is as shown in FIG. 4a, wherein 71 is a substrate, 72 is a metal film, and 73 is a photoresist;
- Step 602 Perform a first exposure and development process on the photoresist film on the substrate according to the set channel pattern to form a first channel pattern 74.
- the substrate including the first channel pattern 74 is as shown in FIG. 4b. ;
- Step 603 performing a second exposure process on the photoresist on the substrate including the first channel pattern 74.
- the thickness of the exposed photoresist is the thickness of the photoresist remaining at the first channel pattern on the substrate, such as As shown in FIG. 4c, 75 is an exposed photoresist, and 73 is an unexposed photoresist;
- Step 604 removing the exposed photoresist 75, forming a second channel pattern 76 on the photoresist film of the substrate, and the substrate containing the second channel pattern is as shown in FIG. 4d;
- Step 605 etching the metal film 72 according to the second channel pattern 76 formed on the photoresist film to form a desired pattern on the substrate, and forming a desired pattern as shown in FIG. 4e;
- Step 606 Exposing the unexposed photoresist film by an exposure light source, so that the thickness of the exposed photoresist film is the same as the thickness of the remaining photoresist film on the substrate, and after exposing the unexposed photoresist film The substrate is shown in Figure 4f;
- Step 607 immersing the exposed substrate in the developing solution to remove the photoresist on the substrate, and removing the substrate of the photoresist as shown in FIG. 4g.
- the light source for exposing the light in the embodiment of the present invention refers to a light source capable of performing exposure processing on the photoresist, such as a short-wave light source.
- the exposure light source of the present disclosure is not limited to the embodiment of the present invention, and may include any other type of A light source for exposing the photoresist is also encompassed within the scope of the present invention.
- the exposure light source in the embodiment of the present invention includes but is not limited to the following light sources: a white light source and an ultraviolet light source.
- the light source containing short-wave light may be a strip light source, a planar light source, or any other shape of light source, and the photoresist on the board receives the same light intensity. As shown in FIG.
- the exposure light source is a strip light source
- the light source is uniformly moved in a direction parallel to the substrate and the substrate is irradiated, and the exposure degree of the photoresist on the board is the same; wherein 81 is an exposure light source, and 82 is light. Engraved, 83 is the substrate.
- the exposure light source is a planar light source, and the area of the planar short-wave light source is the same as the area of the substrate, the light source is parallel to the substrate, and the light emitted by the light source is vertically irradiated on the substrate, so that the exposure of the photoresist on the substrate is the same;
- the exposure light source exposes the photoresists in different regions on the substrate, and the exposure of the photoresist on the board is the same.
- the exposure light source is a planar light source, and the exposure light source exposes the photoresist on the substrate, wherein 91 is an exposure light source, 92 is a photoresist, and 93 is a substrate.
- the 4mask process is taken as an example, but the present invention is not limited to the above embodiment, and any number of patterning processes may be applied to the embodiment of the present invention as long as the photoresist removal method is involved.
- the embodiment of the invention further provides a method for manufacturing a display substrate, which comprises the steps of forming a device pattern on a substrate by a patterning process by using a photoresist, and performing photoresist on the substrate after the patterning process.
- a step of removing wherein the step of removing the photoresist on the substrate after the patterning process comprises any one of the above photoresist removal methods.
- a method of manufacturing a display substrate includes: exposing a photoresist on a substrate subjected to a patterning process; and removing the exposed photoresist by a developing process.
- the display substrate is, for example, a thin film transistor array substrate, and the thin film transistor array substrate includes, for example, a thin film transistor, a pixel electrode, a gate line, and a data line;
- the device pattern is, for example, a pattern of a gate, an active layer, a source/drain electrode, a pixel electrode, a gate line, or a data line in a thin film transistor.
- Exposing the photoresist on the substrate after the patterning process comprises: determining an exposure energy for exposing the photoresist according to the thickness of the photoresist to be removed; and determining exposure energy according to the determined exposure process,
- the photoresist on the substrate after the patterning process is subjected to exposure processing; wherein factors affecting the exposure energy include, but are not limited to, the following factors: exposure intensity, exposure time.
- the exposure intensity of the photoresist may be determined according to the thickness of the photoresist to be removed; according to the determined exposure intensity, on the substrate after the patterning process
- the photoresist is subjected to exposure processing; or the exposure time of the photoresist is determined according to the thickness of the photoresist to be removed; and the photolithography on the substrate after the patterning process is determined according to the determined exposure processing time
- the glue is exposed.
- the exposure processing time and the exposure intensity of the exposure processing are proportional to the thickness of the exposed photoresist.
- the longer the exposure treatment the greater the exposure intensity, and the thicker the thickness of the exposed photoresist.
- the photoresists with different compositions have different light sensitivities, the exposure treatment time is the same, or the exposure intensity is the same, and the thickness of the exposed photoresist may be different. Therefore, it is necessary to share the same time for determining the exposure process or the exposure intensity depending on the composition of the photoresist and the thickness of the photoresist to be exposed.
- the exposure process can be divided into two cases, one is that the photoresist on the substrate after the patterning process needs to be stripped, and the other case is that the patterning process is required.
- the photoresist on the processed substrate is subjected to ashing treatment; the above two cases have been described in detail in the method for removing the photoresist, and will not be described herein.
- the step of forming a device pattern on the substrate by a patterning process using a photoresist includes:
- Step 1001 forming a material film layer of a desired device on the base substrate;
- Step 1002 forming a photoresist film layer on a material film layer of the device
- Step 1003 exposing and developing the photoresist film layer by using a mask, removing a portion of the photoresist to expose a portion of the material film layer of the device, and leaving another portion of the photoresist on the substrate after the patterning process;
- Step 1004 Etching a portion of the exposed film layer to form the desired device pattern.
- the embodiment of the invention further provides an exposure device, which can be used for removing the photoresist in the above method, the device comprises an exposure light source, and the exposure light source comprises a mask exposure light source and a photoresist removal exposure light source, wherein
- the mode exposure light source is used for irradiating the film layer when performing mask exposure processing on the film layer on the substrate by using the reticle;
- the photoresist removing exposure light source is used for the patterning process by using the photoresist removing method or the display substrate manufacturing method When the photoresist on the processed substrate is removed, the photoresist on the substrate after the patterning process is irradiated.
- the photoresist removal exposure light source refers to a light source capable of performing exposure processing on the photoresist, for example, a short-wave light source.
- the exposure light source described in the present disclosure is not limited to the embodiment of the present invention, and may include any other type of light that can be used.
- the light source for performing the exposure treatment is also covered by the protection scope of the present invention. within.
- the specific exposure light source has been described in detail in the foregoing, and will not be described again here.
- the photoresist on the substrate processed by the patterning process is exposed; the exposed photoresist is removed by the development process; and the photoresist on the substrate after the patterning process is used
- the photoresist is removed by the exposure processing and the development processing. Therefore, when the photoresist on the substrate after the patterning process is stripped, it is no longer necessary to configure the stripping device, or when the ashing process is performed, it is no longer necessary to configure the high-power device. As well as chemical gases, equipment costs are saved and production costs are reduced.
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Plasma & Fusion (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Thin Film Transistor (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
Claims
Priority Applications (1)
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US14/421,570 US20150346603A1 (en) | 2013-09-26 | 2014-06-26 | Method of removing photoresist, exposure apparatus and method of manufacturing display substrate |
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CN201310446586.X | 2013-09-26 | ||
CN201310446586.XA CN103472694B (zh) | 2013-09-26 | 2013-09-26 | 光刻胶的去除方法、曝光装置以及显示基板的制造方法 |
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US (1) | US20150346603A1 (zh) |
CN (1) | CN103472694B (zh) |
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CN103472694B (zh) * | 2013-09-26 | 2016-05-04 | 京东方科技集团股份有限公司 | 光刻胶的去除方法、曝光装置以及显示基板的制造方法 |
CN103969966B (zh) * | 2014-05-15 | 2015-04-15 | 京东方科技集团股份有限公司 | 一种光刻胶的去除方法 |
CN108020991A (zh) * | 2016-10-31 | 2018-05-11 | 无锡中微掩模电子有限公司 | 集成电路用掩模版背曝方法 |
CN108508711A (zh) * | 2017-02-28 | 2018-09-07 | 山东浪潮华光光电子股份有限公司 | 一种正性光刻胶的去除方法 |
CN113176703A (zh) * | 2021-03-26 | 2021-07-27 | 深圳市路维光电股份有限公司 | 掩膜版脱膜去胶方法、制作方法及掩膜版 |
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KR100500684B1 (ko) * | 1999-12-29 | 2005-07-12 | 비오이 하이디스 테크놀로지 주식회사 | 4-마스크 공정을 이용한 액정 디스플레이의 제조 방법 |
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US20060128160A1 (en) * | 2004-12-10 | 2006-06-15 | Yoo Woo S | Photoresist strip using solvent vapor |
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2013
- 2013-09-26 CN CN201310446586.XA patent/CN103472694B/zh active Active
-
2014
- 2014-06-26 US US14/421,570 patent/US20150346603A1/en not_active Abandoned
- 2014-06-26 WO PCT/CN2014/080894 patent/WO2015043261A1/zh active Application Filing
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CN103472694B (zh) | 2016-05-04 |
US20150346603A1 (en) | 2015-12-03 |
CN103472694A (zh) | 2013-12-25 |
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