WO2014171404A1 - 熱硬化性樹脂組成物及び半導体装置の製造方法 - Google Patents
熱硬化性樹脂組成物及び半導体装置の製造方法 Download PDFInfo
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- WO2014171404A1 WO2014171404A1 PCT/JP2014/060477 JP2014060477W WO2014171404A1 WO 2014171404 A1 WO2014171404 A1 WO 2014171404A1 JP 2014060477 W JP2014060477 W JP 2014060477W WO 2014171404 A1 WO2014171404 A1 WO 2014171404A1
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- resin composition
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3512—Cracking
Definitions
- the present invention relates to a thermosetting resin composition and a method for manufacturing a semiconductor device.
- the surface mount type suitable for high-density mounting is the mainstream of the semiconductor package instead of the conventional pin insertion type.
- the lead is soldered directly to a printed circuit board or the like.
- the entire package is heated and mounted by infrared reflow, vapor phase reflow, solder dipping, or the like.
- the space between the semiconductor element and the substrate is filled with an underfill material in order to protect the surface of the semiconductor element and ensure the connection reliability between the semiconductor element and the substrate.
- an underfill material in consideration of the ease of arrangement and the ease of adjusting the filling degree, a sheet-like underfill material is used instead of a liquid material to provide a space between the semiconductor element and the substrate.
- Patent Document 1 A filling technique has been proposed (Patent Document 1).
- the semiconductor element is connected to the adherend such as a substrate and mounted.
- a procedure is adopted in which a space between an adherend such as a substrate and a semiconductor element is filled with an integrated sheet-like underfill material. This process facilitates filling of the space between the adherend and the semiconductor element.
- the thickness of the semiconductor element may be reduced in order to reduce the size and thickness of the semiconductor device, the influence of the thermal response behavior of the adherend to the semiconductor element (warping, expansion, etc.) as the semiconductor element becomes thinner. ) Is getting bigger. This is generally due to the fact that the thermal expansion coefficient of an adherend such as a substrate is larger than the value of the semiconductor element. In particular, stresses due to differences in the thermal response behavior of the semiconductor element and the adherend are likely to concentrate on the connection member such as a solder bump that connects the semiconductor element and the adherend, and in some cases, the joint is broken. Sometimes. On the other hand, although it is possible to select the materials of both the semiconductor element and the adherend so as to match the thermal responsive behavior, the width of the materials that can be selected is limited.
- the present invention relates to a thermosetting resin composition capable of manufacturing a semiconductor device with high connection reliability while ensuring the availability of material of members by relaxing the difference in thermal response behavior between a semiconductor element and an adherend.
- An object is to provide a manufacturing method of a semiconductor device using the same.
- the present invention includes an epoxy resin, And a novolak-type phenol resin having a hydroxyl group equivalent of 200 g / eq or more.
- thermosetting resin composition includes a novolac type phenol resin (hereinafter, also referred to as “specific phenol resin”) having a hydroxyl group equivalent of 200 g / eq or more together with an epoxy resin, a cured product (hereinafter, referred to as “cured product”), and moderate flexibility can be exhibited by suppressing excessive crosslinking between the two resins. Thereby, the difference in the thermal response behavior between the semiconductor element and the adherend can be alleviated, and a semiconductor device with high connection reliability in which breakage of the joint portion is suppressed can be obtained. Moreover, since the difference in the thermal response behavior between the semiconductor element and the adherend can be reduced by using the thermosetting resin composition, it is possible to give a selection range to the material of the semiconductor element or the adherend. it can.
- thermosetting resin composition is suitable for semiconductor element sealing.
- the said novolak-type phenol resin contains the structure represented by following Structural formula. (In the formula, n is an integer of 0 to 12.)
- the balance between rigidity and flexibility in the cured product can be achieved at a higher level, and the reliability of the semiconductor device can be further improved.
- the thermosetting resin composition preferably contains an inorganic filler having an average particle size of 10 nm to 1000 nm.
- the coefficient of thermal expansion of the cured product can be reduced, and the influence of the thermal response behavior caused by the cured product itself can be suppressed, thereby improving the reliability of the semiconductor device.
- the sex can be increased.
- the average particle size of the inorganic filler in the above range, good transparency can be obtained in the thermosetting resin composition. As a result, the wafer dicing position and the semiconductor element can be mounted on the adherend. Position alignment can be easily performed.
- the thermal expansion coefficient ⁇ of the thermosetting resin composition after heat treatment at 175 ° C. for 1 hour is preferably 10 ppm / K or more and 200 ppm / K or less.
- the storage elastic modulus E ′ of the thermosetting resin composition after heat treatment at 175 ° C. for 1 hour is preferably 100 MPa or more and 10,000 MPa or less. Thereby, moderate rigidity can be obtained in the cured product, and absorption or dispersion of a difference in thermal response behavior can be promoted to further improve the reliability of the semiconductor device.
- thermosetting resin composition is preferably in the form of a sheet.
- the present invention also includes a semiconductor device manufacturing method including a fixing step of fixing a semiconductor element to an adherend through the thermosetting resin composition, and a curing step of curing the thermosetting resin composition. .
- thermosetting resin composition By manufacturing a semiconductor device using the thermosetting resin composition, the difference in the thermal response behavior between the semiconductor element, the cured product of the thermosetting resin composition, and the adherend can be reduced. And a highly reliable semiconductor device can be efficiently manufactured.
- thermosetting resin composition a sheet-like thermosetting resin composition and a back surface grinding tape are integrated, and a method for manufacturing a semiconductor device using the same.
- the following description is basically applicable to the case of the thermosetting resin composition alone.
- the sealing sheet 10 includes a back surface grinding tape 1 and a sheet-like thermosetting resin composition 2 laminated on the back surface grinding tape 1.
- the thermosetting resin composition 2 does not need to be laminated
- thermosetting resin composition 2 in the present embodiment is in the form of a sheet, and a sealing film that fills a space between a surface-mounted (for example, flip chip mounted) semiconductor element and an adherend, or a semiconductor element Can be suitably used as an adhesive film for fixing to the adherend.
- the thermosetting resin composition 2 includes an epoxy resin and a novolac type phenol resin having a hydroxyl group equivalent of 200 g / eq or more, and if necessary, contains a thermosetting acceleration catalyst, a flux agent, a crosslinking agent, an inorganic filler, and the like. May be included.
- the epoxy resin is not particularly limited as long as it is generally used as a thermosetting resin.
- an epoxy resin such as a glycidylamine type is used. These can be used alone or in combination of two or more.
- novolac type epoxy resins novolac type epoxy resins, biphenyl type epoxy resins, trishydroxyphenylmethane type resins or tetraphenylolethane type epoxy resins are particularly preferred. This is because these epoxy resins are rich in reactivity with a phenol resin as a curing agent and are excellent in heat resistance and the like.
- the novolak-type phenol resin contained in the thermosetting resin composition 2 acts as a curing agent for the epoxy resin, and is not particularly limited as long as the hydroxyl equivalent is 200 g / eq or more.
- the novolak type phenol resin having such a hydroxyl equivalent is composed of a phenol and a compound having an appropriate molecular chain length capable of undergoing a condensation reaction with the phenol (for example, aldehydes, bis (alkoxymethyl) biphenyls, etc.) Can be obtained according to a conventional method.
- a commercially available novolac type phenol resin having a hydroxyl group equivalent of 200 g / eq or more can also be suitably used. Examples thereof include “SN-495” manufactured by Nippon Steel Chemical Co., Ltd. and “MEH-7851H” manufactured by Meiwa Kasei.
- the upper limit of a hydroxyl equivalent is not specifically limited, When the sclerosis
- a novolak-type phenol resin contains the structure represented by the following structural formula. (In the formula, n is an integer of 0 to 12.)
- n may be an integer from 0 to 12, but is preferably an integer from 0 to 8.
- thermosetting resin composition 2 can contain a thermosetting resin and a thermoplastic resin other than these in addition to the epoxy resin and the specific phenol resin.
- thermosetting resins examples include amino resins, unsaturated polyester resins, polyurethane resins, silicone resins, and thermosetting polyimide resins. These resins can be used alone or in combination of two or more.
- a novolac type phenol resin such as a phenol aralkyl resin, a cresol novolak resin, a tert-butylphenol novolak resin, a nonylphenol novolak resin, or the like, as long as the effects of the present invention are not impaired.
- phenol resins such as resins and polyoxystyrene such as polyparaoxystyrene can be used in combination.
- the mixing ratio of the epoxy resin and the specific phenol resin is preferably such that, for example, the hydroxyl group in the specific phenol resin is 0.5 to 2.0 equivalents per equivalent of epoxy group in the epoxy resin component. It is. More preferred is 0.8 to 1.2 equivalents. That is, when the blending ratio of both is out of the above range, a sufficient curing reaction does not proceed and the properties of the cured product of the thermosetting resin composition are likely to deteriorate.
- thermoplastic resin examples include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylic acid ester copolymer, polybutadiene resin, polycarbonate resin, heat Examples thereof include plastic polyimide resins, polyamide resins such as 6-nylon and 6,6-nylon, phenoxy resins, acrylic resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluorine resins. These thermoplastic resins can be used alone or in combination of two or more. Of these thermoplastic resins, an acrylic resin that has few ionic impurities and high heat resistance and can ensure the reliability of the semiconductor element is particularly preferable.
- the acrylic resin is not particularly limited, and includes one or more esters of acrylic acid or methacrylic acid ester having a linear or branched alkyl group having 30 or less carbon atoms, particularly 4 to 18 carbon atoms.
- Examples include polymers as components.
- the alkyl group include methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, t-butyl group, isobutyl group, amyl group, isoamyl group, hexyl group, heptyl group, cyclohexyl group, 2 -Ethylhexyl group, octyl group, isooctyl group, nonyl group, isononyl group, decyl group, isodecyl group, undecyl group, lauryl group, tridecyl group, tetradecyl group, stearyl group, octadecyl group,
- the other monomer forming the polymer is not particularly limited, and for example, a cyano group-containing monomer such as acrylonitrile, acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic Carboxyl group-containing monomers such as acid, fumaric acid or crotonic acid, acid anhydride monomers such as maleic anhydride or itaconic anhydride, 2-hydroxyethyl (meth) acrylate, 2-hydroxy (meth) acrylic acid Propyl, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxy (meth) acrylate Lauryl or Hydroxyl group-containing monomers such as 4-hydroxymethylcyclohexyl) -methyl acrylate, styrenesulfonic acid, a
- thermosetting resin composition using an epoxy resin, a specific phenol resin, and an acrylic resin is particularly preferable. Since these resins have few ionic impurities and high heat resistance, the reliability of the semiconductor element can be ensured.
- the mixing ratio of the epoxy resin and the specific phenol resin is 10 to 200 parts by weight with respect to 100 parts by weight of the acrylic resin component.
- thermosetting acceleration catalyst for the epoxy resin and the specific phenol resin is not particularly limited, and can be appropriately selected from known thermosetting acceleration catalysts.
- stimulation catalyst can be used individually or in combination of 2 or more types.
- the thermosetting acceleration catalyst for example, an amine-based curing accelerator, a phosphorus-based curing accelerator, an imidazole-based curing accelerator, a boron-based curing accelerator, a phosphorus-boron-based curing accelerator, or the like can be used.
- the addition amount of the thermosetting acceleration catalyst is preferably 0.1 to 5 parts by weight with respect to 100 parts by weight of the total of the epoxy resin and the specific phenol resin.
- a flux agent may be added to the thermosetting resin composition 2 in order to remove the oxide film on the surface of the solder bump and facilitate mounting of the semiconductor element.
- the fluxing agent is not particularly limited, and a conventionally known compound having a flux action can be used.
- thermosetting resin composition 2 of the present embodiment is crosslinked to some extent in advance, a polyfunctional compound that reacts with a functional group at the molecular chain terminal of the polymer is added as a crosslinking agent during production. It is good to leave. Thereby, the adhesive property under high temperature can be improved and heat resistance can be improved.
- the cross-linking agent is particularly preferably a polyisocyanate compound such as tolylene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, an adduct of polyhydric alcohol and diisocyanate.
- the addition amount of the crosslinking agent is usually preferably 0.05 to 7 parts by weight with respect to 100 parts by weight of the polymer. When the amount of the cross-linking agent is more than 7 parts by weight, the adhesive force is lowered, which is not preferable. On the other hand, if it is less than 0.05 parts by weight, the cohesive force is insufficient, which is not preferable. Moreover, you may make it include other polyfunctional compounds, such as an epoxy resin, together with such a polyisocyanate compound as needed.
- an inorganic filler can be mix
- the blending of the inorganic filler makes it possible to impart conductivity, improve thermal conductivity, adjust the storage elastic modulus, and the like.
- the inorganic filler examples include silica, clay, gypsum, calcium carbonate, barium sulfate, alumina, beryllium oxide, silicon carbide, silicon nitride, and other ceramics, aluminum, copper, silver, gold, nickel, chromium, lead. , Various inorganic powders made of metals such as tin, zinc, palladium, solder, or alloys, and other carbon. These can be used alone or in combination of two or more. Among these, silica, particularly fused silica is preferably used.
- the average particle size of the inorganic filler is not particularly limited, but is preferably in the range of 10 nm to 1000 nm, more preferably in the range of 20 nm to 200 nm, and in the range of 30 nm to 100 nm. Is more preferable.
- the average particle size of the inorganic filler is less than 10 nm, the flexibility of the thermosetting resin composition is lowered.
- the average particle diameter exceeds 1000 nm, the transparency of the thermosetting resin composition is lowered and the particle diameter is large with respect to the gap sealed by the thermosetting resin composition and the sealing performance is lowered. It becomes a factor to do.
- inorganic fillers having different average particle sizes may be used in combination.
- the average particle size is a value determined by a photometric particle size distribution meter (manufactured by HORIBA, apparatus name: LA-910).
- the blending amount of the inorganic filler is preferably 10 to 400 parts by weight, more preferably 50 to 250 parts by weight with respect to 100 parts by weight of the organic resin component. If the blending amount of the inorganic filler is less than 10 parts by weight, the storage elastic modulus may be lowered and the stress reliability of the package may be greatly impaired. On the other hand, if it exceeds 400 parts by weight, the fluidity of the thermosetting resin composition 2 may be reduced, and may not be sufficiently embedded in the irregularities of the substrate or semiconductor element, causing voids or cracks.
- additives In addition to the said inorganic filler, other additives can be suitably mix
- other additives include flame retardants, silane coupling agents, ion trapping agents, and the like.
- flame retardant include antimony trioxide, antimony pentoxide, brominated epoxy resin, and the like. These can be used alone or in combination of two or more.
- the silane coupling agent include ⁇ - (3,4-epoxycyclohexyl) ethyltrimethoxysilane, ⁇ -glycidoxypropyltrimethoxysilane, ⁇ -glycidoxypropylmethyldiethoxysilane, and the like. These compounds can be used alone or in combination of two or more.
- the ion trapping agent include hydrotalcites and bismuth hydroxide. These can be used alone or in combination of two or more.
- thermosetting resin composition 2 may be colored as necessary.
- the color exhibited by coloring is not particularly limited, and for example, black, blue, red, green, and the like are preferable. In coloring, it can be appropriately selected from known colorants such as pigments and dyes.
- thermosetting resin composition (Physical properties of thermosetting resin composition)
- the haze of the thermosetting resin composition before thermosetting is preferably 70% or less, more preferably 50% or less, and further preferably 30% or less.
- the haze of each thermosetting resin composition was measured using a haze meter HM-150 (manufactured by Murakami Color Research Laboratory). The measurement was performed according to JIS K 7136.
- the thermal expansion coefficient ⁇ of the cured product after heat-treating the thermosetting resin composition at 175 ° C. for 1 hour is not particularly limited, but is preferably 10 ppm / K or more and 200 ppm / K or less, preferably 10 ppm / K or more and 100 ppm / It is more preferably K or less, and further preferably 10 ppm / K or more and 50 ppm / K or less.
- the storage elastic modulus E ′ of the cured product after heat-treating the thermosetting resin composition at 175 ° C. for 1 hour is not particularly limited, but is preferably 100 MPa or more and 10,000 MPa or less, and more preferably 500 MPa or more and 7000 MPa or less. Preferably, it is 1000 MPa or more and 5000 MPa or less. Thereby, moderate rigidity can be obtained in the cured product, and absorption or dispersion of a difference in thermal response behavior can be promoted to further improve the reliability of the semiconductor device.
- the glass transition temperature (Tg) after the thermosetting treatment of the thermosetting resin composition at 175 ° C. for 1 hour is preferably 100 to 180 ° C., more preferably 130 to 170 ° C.
- the minimum melt viscosity at 100 to 200 ° C. of the thermosetting resin composition 2 before thermosetting is preferably 100 Pa ⁇ s or more and 20000 Pa ⁇ s or less, and 1000 Pa ⁇ s or more and 10,000 Pa ⁇ s or less. It is more preferable that By making minimum melt viscosity into the said range, the approach to the thermosetting resin composition 2 of the connection member 4 (refer FIG. 2A) can be made easy. In addition, generation of voids during electrical connection of the semiconductor element 5 and protrusion of the thermosetting resin composition 2 from the space between the semiconductor element 5 and the adherend 6 can be prevented (FIG. 2E). reference).
- the measurement of the minimum melt viscosity is a value measured by a parallel plate method using a rheometer (manufactured by HAAKE, RS-1). More specifically, the melt viscosity is measured in the range of 60 ° C. to 200 ° C. under the conditions of a gap of 100 ⁇ m, a rotating plate diameter of 20 mm, a rotating speed of 10 s ⁇ 1 , and a heating rate of 10 ° C./min. The lowest melt viscosity in the range from 100 ° C. to 200 ° C. is taken as the minimum melt viscosity.
- the viscosity at 23 degreeC of the said thermosetting resin composition 2 before thermosetting is 0.01 MPa * s or more and 100 MPa * s or less, and is 0.1 MPa * s or more and 10 MPa * s or less. Is more preferable.
- the thermosetting resin composition before thermosetting has the viscosity in the above range, the holding property of the semiconductor wafer 3 (see FIG. 2C) during dicing and the handleability during work can be improved.
- the measurement of a viscosity can be performed according to the measuring method of minimum melt viscosity.
- the water absorption rate under the conditions of a temperature of 23 ° C. and a humidity of 70% of the thermosetting resin composition 2 before thermosetting is preferably 1% by weight or less, and preferably 0.5% by weight or less. More preferred.
- the thermosetting resin composition 2 has the above water absorption, the absorption of moisture into the thermosetting resin composition 2 is suppressed, and the generation of voids when the semiconductor element 5 is mounted is more efficiently generated. Can be suppressed.
- the lower limit of the water absorption rate is preferably as small as possible, substantially 0% by weight is preferable, and 0% by weight is more preferable.
- the thickness of the thermosetting resin composition 2 (total thickness in the case of multiple layers) is not particularly limited, the strength of the thermosetting resin composition 2 and the filling of the space between the semiconductor element 5 and the adherend 6 Considering the property, it may be about 10 ⁇ m to 100 ⁇ m. In addition, the thickness of the thermosetting resin composition 2 can be appropriately set in consideration of the gap between the semiconductor element 5 and the adherend 6 and the height of the connection member.
- thermosetting resin composition 2 of the sealing sheet 10 is protected by a separator (not shown).
- the separator has a function as a protective material that protects the thermosetting resin composition 2 until it is put to practical use.
- the separator is peeled off when the semiconductor wafer 3 is stuck on the thermosetting resin composition 2 of the sealing sheet.
- a plastic film or paper surface-coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, a fluorine release agent, or a long-chain alkyl acrylate release agent can be used.
- the back grinding tape 1 includes a substrate 1a and an adhesive layer 1b laminated on the substrate 1a.
- the thermosetting resin composition 2 is laminated
- the base material 1 a is a strength matrix of the sealing sheet 10.
- polyolefins such as low density polyethylene, linear polyethylene, medium density polyethylene, high density polyethylene, ultra low density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene, polybutene, polymethylpentene, ethylene-acetic acid Vinyl copolymer, ionomer resin, ethylene- (meth) acrylic acid copolymer, ethylene- (meth) acrylic acid ester (random, alternating) copolymer, ethylene-butene copolymer, ethylene-hexene copolymer, Polyester such as polyurethane, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, wholly aromatic polyamide, polyphenylsulfur De, aramid (paper), glass, glass cloth, fluorine resin,
- examples of the material of the substrate 1a include polymers such as a crosslinked body of the above resin.
- the plastic film may be used unstretched or may be uniaxially or biaxially stretched as necessary.
- the surface of the substrate 1a is chemically treated by conventional surface treatments such as chromic acid treatment, ozone exposure, flame exposure, high-voltage impact exposure, ionizing radiation treatment, etc. in order to improve adhesion and retention with adjacent layers.
- a physical treatment or a coating treatment with a primer for example, an adhesive substance
- the base material 1a can be used by appropriately selecting the same type or different types, and a blend of several types can be used as necessary.
- a conductive material vapor deposition layer having a thickness of about 30 to 500 mm made of metal, alloy, oxide thereof, or the like is provided on the base material 1a. be able to.
- the substrate 1a may be a single layer or a multilayer of two or more.
- the thickness of the substrate 1a can be appropriately determined, and is generally about 5 ⁇ m to 200 ⁇ m, preferably 35 ⁇ m to 120 ⁇ m.
- additives for example, a colorant, a filler, a plasticizer, an anti-aging agent, an antioxidant, a surfactant, a flame retardant, etc.
- a colorant for example, a colorant, a filler, a plasticizer, an anti-aging agent, an antioxidant, a surfactant, a flame retardant, etc.
- the pressure-sensitive adhesive used for forming the pressure-sensitive adhesive layer 1b can securely hold the semiconductor wafer or the semiconductor chip via the thermosetting resin composition during dicing, and can peel the semiconductor chip with the thermosetting resin composition at the time of pickup.
- a general pressure-sensitive adhesive such as an acrylic pressure-sensitive adhesive or a rubber-based pressure-sensitive adhesive can be used.
- acrylic polymer examples include those using acrylic acid ester as a main monomer component.
- acrylic esters include (meth) acrylic acid alkyl esters (for example, methyl ester, ethyl ester, propyl ester, isopropyl ester, butyl ester, isobutyl ester, s-butyl ester, t-butyl ester, pentyl ester, Isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, tridecyl ester, tetradecyl ester, hexadecyl ester , Octadecyl esters, eicosyl esters, etc., alkyl
- the acrylic polymer includes units corresponding to the other monomer components copolymerizable with the (meth) acrylic acid alkyl ester or cycloalkyl ester, if necessary, for the purpose of modifying cohesive force, heat resistance, and the like. You may go out.
- Such monomer components include carboxyl group-containing monomers such as acrylic acid, methacrylic acid, carboxyethyl (meth) acrylate, carboxypentyl (meth) acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid; maleic anhydride Acid anhydride monomers such as itaconic anhydride; 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate Hydroxyl group-containing monomers such as 8-hydroxyoctyl (meth) acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate, (4-hydroxymethylcyclohexyl) methyl (meth) acrylate;
- the Sulfonic acid groups such as lensulfonic acid, allylsulfonic acid, 2- (meth)
- a polyfunctional monomer or the like can be included as a monomer component for copolymerization as necessary.
- polyfunctional monomers include hexanediol di (meth) acrylate, (poly) ethylene glycol di (meth) acrylate, (poly) propylene glycol di (meth) acrylate, neopentyl glycol di (meth) acrylate, Pentaerythritol di (meth) acrylate, trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, dipentaerythritol hexa (meth) acrylate, epoxy (meth) acrylate, polyester (meth) acrylate, urethane (meth) Examples include acrylates. These polyfunctional monomers can also be used alone or in combination of two or more. The amount of the polyfunctional monomer used is preferably 30% by weight
- the acrylic polymer can be obtained by subjecting a single monomer or a mixture of two or more monomers to polymerization.
- the polymerization can be performed by any method such as solution polymerization, emulsion polymerization, bulk polymerization, suspension polymerization and the like.
- the content of the low molecular weight substance is preferably small.
- the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3 million.
- an external cross-linking agent can be appropriately employed for the pressure-sensitive adhesive in order to increase the number average molecular weight of an acrylic polymer or the like that is a base polymer.
- the external crosslinking method include a method in which a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, or a melamine crosslinking agent is added and reacted.
- a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, or a melamine crosslinking agent is added and reacted.
- the amount used is appropriately determined depending on the balance with the base polymer to be cross-linked, and further depending on the intended use as an adhesive. Generally, about 5 parts by weight or less, more preferably 0.1 to 5 parts by weight, is preferably added to 100 parts by weight of the base polymer.
- additives such as various conventionally known tackifiers and anti-aging agents may be used for the pressure-sensitive adhesive
- the pressure-sensitive adhesive layer 1b can be formed of a radiation curable pressure-sensitive adhesive.
- the radiation curable pressure-sensitive adhesive can increase the degree of crosslinking by irradiation with radiation such as ultraviolet rays, and can easily reduce its adhesive strength, and can be easily picked up. Examples of radiation include X-rays, ultraviolet rays, electron beams, ⁇ rays, ⁇ rays, and neutron rays.
- the radiation curable pressure-sensitive adhesive those having a radiation curable functional group such as a carbon-carbon double bond and exhibiting adhesiveness can be used without particular limitation.
- the radiation curable pressure-sensitive adhesive include additive-type radiation curable pressure-sensitive adhesives in which radiation-curable monomer components and oligomer components are blended with general pressure-sensitive pressure-sensitive adhesives such as the above-mentioned acrylic pressure-sensitive adhesives and rubber-based pressure-sensitive adhesives. An agent can be illustrated.
- Examples of the radiation curable monomer component to be blended include urethane oligomer, urethane (meth) acrylate, trimethylolpropane tri (meth) acrylate, tetramethylolmethane tetra (meth) acrylate, pentaerythritol tri (meth) acrylate, and pentaerythritol.
- Examples thereof include stall tetra (meth) acrylate, dipentaerystol monohydroxypenta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate and the like.
- the radiation curable oligomer component examples include urethane, polyether, polyester, polycarbonate, and polybutadiene oligomers, and those having a weight average molecular weight in the range of about 100 to 30000 are suitable.
- the compounding amount of the radiation curable monomer component or oligomer component can be appropriately determined in such an amount that the adhesive force of the pressure-sensitive adhesive layer can be reduced depending on the type of the pressure-sensitive adhesive layer. In general, the amount is, for example, about 5 to 500 parts by weight, preferably about 40 to 150 parts by weight with respect to 100 parts by weight of the base polymer such as an acrylic polymer constituting the pressure-sensitive adhesive.
- the radiation curable pressure-sensitive adhesive has a carbon-carbon double bond as a base polymer in the polymer side chain or main chain or at the main chain terminal.
- Intrinsic radiation curable adhesives using Intrinsic radiation curable adhesives do not need to contain oligomer components, which are low molecular components, or do not contain many, so they are stable without the oligomer components, etc. moving through the adhesive over time. This is preferable because an adhesive layer having a layered structure can be formed.
- the base polymer having a carbon-carbon double bond those having a carbon-carbon double bond and having adhesiveness can be used without particular limitation.
- an acrylic polymer having a basic skeleton is preferable.
- the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.
- the method for introducing the carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be adopted.
- the carbon-carbon double bond can be easily introduced into the polymer side chain for easy molecular design.
- a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond is converted into a radiation-curable carbon-carbon double bond. Examples of the method include condensation or addition reaction while maintaining the above.
- combinations of these functional groups include carboxylic acid groups and epoxy groups, carboxylic acid groups and aziridyl groups, hydroxyl groups and isocyanate groups.
- a combination of a hydroxyl group and an isocyanate group is preferable because of easy tracking of the reaction.
- the functional group may be on either side of the acrylic polymer and the above compound as long as the acrylic polymer having the carbon-carbon double bond is generated by the combination of these functional groups. In the above preferred combination, it is preferable that the acrylic polymer has a hydroxyl group and the compound has an isocyanate group.
- examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl- ⁇ , ⁇ -dimethylbenzyl isocyanate, and the like.
- acrylic polymer those obtained by copolymerizing the above-exemplified hydroxy group-containing monomers, ether compounds of 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, or the like are used.
- a base polymer having a carbon-carbon double bond can be used alone, but the radiation-curable monomer does not deteriorate the characteristics.
- Components and oligomer components can also be blended.
- the radiation-curable oligomer component or the like is usually in the range of 30 parts by weight, preferably in the range of 0 to 10 parts by weight, with respect to 100 parts by weight of the base polymer.
- the radiation curable pressure-sensitive adhesive preferably contains a photopolymerization initiator when cured by ultraviolet rays or the like.
- the photopolymerization initiator include 4- (2-hydroxyethoxy) phenyl (2-hydroxy-2-propyl) ketone, ⁇ -hydroxy- ⁇ , ⁇ ′-dimethylacetophenone, 2-methyl-2-hydroxypropio ⁇ -ketol compounds such as phenone and 1-hydroxycyclohexyl phenyl ketone; methoxyacetophenone, 2,2-dimethoxy-2-phenylacetophenone, 2,2-diethoxyacetophenone, 2-methyl-1- [4- ( Acetophenone compounds such as methylthio) -phenyl] -2-morpholinopropane-1; benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether and anisoin methyl ether; ketal compounds such as benzyldimethyl ketal; 2-naphthal
- oxygen air
- a method of covering the surface of the pressure-sensitive adhesive layer 1b with a separator, a method of irradiating radiation such as ultraviolet rays in a nitrogen gas atmosphere, and the like can be mentioned.
- various additives for example, a colorant, a thickener, a bulking agent, a filler, a tackifier, a plasticizer, an antiaging agent, Antioxidants, surfactants, crosslinking agents, etc.
- a colorant for example, a colorant, a thickener, a bulking agent, a filler, a tackifier, a plasticizer, an antiaging agent, Antioxidants, surfactants, crosslinking agents, etc.
- the thickness of the pressure-sensitive adhesive layer 1b is not particularly limited, but it is preferably about 1 to 50 ⁇ m from the viewpoint of preventing chipping of the chip cut surface and compatibility of fixing and holding the thermosetting resin composition 2.
- the thickness is preferably 2 to 30 ⁇ m, more preferably 5 to 25 ⁇ m.
- the sealing sheet 10 according to the present embodiment can be prepared, for example, by separately preparing the back grinding tape 1 and the thermosetting resin composition 2 and finally bonding them together. Specifically, it can be produced according to the following procedure.
- the base material 1a can be formed by a conventionally known film forming method.
- the film forming method include a calendar film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method.
- an adhesive composition for forming an adhesive layer is prepared. Resin, additive, etc. which were demonstrated by the term of the adhesive layer are mix
- the coating film is dried under predetermined conditions (heat-crosslinked as necessary) to form the pressure-sensitive adhesive layer 1b.
- predetermined conditions For example, roll coating, screen coating, gravure coating, etc. are mentioned.
- drying conditions for example, a drying temperature of 80 to 150 ° C. and a drying time of 0.5 to 5 minutes are performed.
- the coating film may be dried on the said dry conditions, and the adhesive layer 1b may be formed. Then, the adhesive layer 1b is bonded together with a separator on the base material 1a. Thereby, the tape 1 for back surface grinding provided with the base material 1a and the adhesive layer 1b is produced.
- the sheet-like thermosetting resin composition 2 is produced as follows, for example. First, an epoxy resin and a specific phenol resin, which are forming materials of the thermosetting resin composition 2, are blended with a thermoplastic component and various additives as necessary, and dissolved in a suitable solvent (for example, methyl ethyl ketone, ethyl acetate, etc.). A coating solution is prepared by dispersing.
- a suitable solvent for example, methyl ethyl ketone, ethyl acetate, etc.
- the prepared coating solution is applied on a base separator so as to have a predetermined thickness to form a coating film, and then the coating film is dried under predetermined conditions to obtain a sheet-like thermosetting resin composition.
- a coating method For example, roll coating, screen coating, gravure coating, etc. are mentioned.
- drying conditions for example, a drying temperature of 70 to 160 ° C. and a drying time of 1 to 5 minutes are performed.
- a coating film may be dried on the said drying conditions, and a sheet-like thermosetting resin composition may be formed. Then, a thermosetting resin composition is bonded together with a separator on a base material separator.
- the separator is peeled off from the backside grinding tape 1 and the thermosetting resin composition 2, and the two are bonded together so that the thermosetting resin composition and the pressure-sensitive adhesive layer become the bonding surface.
- Bonding can be performed by, for example, pressure bonding.
- the lamination temperature is not particularly limited, and is preferably 30 to 50 ° C., for example, and more preferably 35 to 45 ° C.
- the linear pressure is not particularly limited, and for example, 0.98 to 196 N / cm is preferable, and 9.8 to 98 N / cm is more preferable.
- the base material separator on a thermosetting resin composition is peeled, and the sealing sheet which concerns on this Embodiment is obtained.
- the method for manufacturing a semiconductor device includes a fixing step of fixing a semiconductor element to an adherend via the thermosetting resin composition, and a curing step of curing the thermosetting resin composition.
- the thermosetting resin composition is laminated on the back surface grinding tape to form a sealing sheet, and the adherend and the semiconductor are fixed when the semiconductor element is fixed. The element is electrically connected.
- the manufacturing method of the semiconductor device of the present embodiment includes a bonding step of bonding the circuit surface on which the connection member of the semiconductor wafer is formed and the thermosetting resin composition of the sealing sheet, Grinding step for grinding the back surface of the semiconductor wafer, Wafer fixing step for peeling the semiconductor wafer from the back surface grinding tape together with the thermosetting resin composition and attaching the semiconductor wafer to a dicing tape, Dicing the semiconductor wafer and the above A dicing step for forming a semiconductor element with a thermosetting resin composition, a pickup step for peeling the semiconductor element with the thermosetting resin composition from the dicing tape, and a space between the adherend and the semiconductor element.
- the semiconductor element and the adherend are electrically connected through the connection member while being filled with the thermosetting resin composition.
- Step, and a curing step of curing the thermosetting resin composition are electrically connected through the connection member while being filled with the thermosetting resin composition.
- connection members 4 are formed on the circuit surface 3a of the semiconductor wafer 3 (see FIG. 2A).
- the material of the connecting member such as a bump or a conductive material, for example, a tin-lead metal material, a tin-silver metal material, a tin-silver-copper metal material, a tin-zinc metal material, Examples thereof include solders (alloys) such as a tin-zinc-bismuth metal material, a gold metal material, and a copper metal material.
- the height of the connecting member is also determined according to the application, and is generally about 15 to 100 ⁇ m. Of course, the height of each connection member in the semiconductor wafer 3 may be the same or different.
- the thickness of the thermosetting resin composition includes the height X ( ⁇ m) of the connecting member formed on the surface of the semiconductor wafer and the thickness of the thermosetting resin composition. It is preferable that the thickness Y ( ⁇ m) satisfies the following relationship. 0.5 ⁇ Y / X ⁇ 2
- the height X ( ⁇ m) of the connecting member and the thickness Y ( ⁇ m) of the cured film satisfy the above relationship, the space between the semiconductor element and the adherend can be sufficiently filled. Further, excessive protrusion of the thermosetting resin composition from the space can be prevented, and contamination of the semiconductor element by the thermosetting resin composition can be prevented. In addition, when the height of each connection member differs, the height of the highest connection member is used as a reference.
- thermosetting resin composition 2 of the sealing sheet 10 is appropriately peeled off, and as shown in FIG. 2A, the circuit surface 3a on which the connection member 4 of the semiconductor wafer 3 is formed. And the thermosetting resin composition 2 are opposed to each other, and the thermosetting resin composition 2 and the semiconductor wafer 3 are bonded together (mounting).
- the method of bonding is not particularly limited, but a method by pressure bonding is preferable.
- the crimping is usually performed while applying a pressure of 0.1 to 1 MPa, more preferably 0.3 to 0.7 MPa by a known pressing means such as a crimping roll. At this time, pressure bonding may be performed while heating to about 40 to 100 ° C. In order to improve the adhesion, it is also preferable to perform pressure bonding under reduced pressure (1 to 1000 Pa).
- the surface (that is, the back surface) 3b opposite to the circuit surface 3a of the semiconductor wafer 3 is ground (see FIG. 2B).
- the thin processing machine used for back surface grinding of the semiconductor wafer 3 is not particularly limited, and examples thereof include a grinding machine (back grinder) and a polishing pad. Further, the back surface grinding may be performed by a chemical method such as etching. The back surface grinding is performed until the semiconductor wafer has a desired thickness (for example, 700 to 25 ⁇ m).
- the semiconductor wafer 3 is peeled off from the back surface grinding tape 1 with the thermosetting resin composition 2 attached, and the semiconductor wafer 3 and the dicing tape 11 are attached (see FIG. 2C). At this time, bonding is performed so that the back surface 3b of the semiconductor wafer 3 and the adhesive layer 11b of the dicing tape 11 face each other. Therefore, the thermosetting resin composition 2 bonded to the circuit surface 3a of the semiconductor wafer 3 is exposed.
- the dicing tape 11 has a structure in which an adhesive layer 11b is laminated on a substrate 11a.
- the base material 11a and the pressure-sensitive adhesive layer 11b can be suitably produced by using the components and the production methods shown in the paragraphs of the base material 1a and the pressure-sensitive adhesive layer 1b of the back grinding tape 1. Moreover, a commercially available dicing tape can also be used suitably.
- the pressure-sensitive adhesive layer 1b When the pressure-sensitive adhesive layer 1b has radiation curability when the semiconductor wafer 3 is peeled from the back surface grinding tape 1, the pressure-sensitive adhesive layer 1b is irradiated with radiation to cure the pressure-sensitive adhesive layer 1b. Can be easily performed.
- the radiation dose may be appropriately set in consideration of the type of radiation used, the degree of cure of the pressure-sensitive adhesive layer, and the like.
- thermosetting resin composition diced by dicing the semiconductor wafer 3 and the thermosetting resin composition 2 as shown in FIG. 2D based on the dicing position obtained by direct light, indirect light, infrared rays, or the like.
- the attached semiconductor element 5 is formed.
- the dicing position can be easily determined by appropriately adjusting the transparency of the thermosetting resin composition 2 according to the average particle diameter of the inorganic filler.
- the semiconductor wafer 3 is cut into a predetermined size and divided into pieces (small pieces), and a semiconductor chip (semiconductor element) 5 is manufactured.
- the semiconductor chip 5 obtained here is integrated with the thermosetting resin composition 2 cut into the same shape. Dicing is performed according to a conventional method from the circuit surface 3a on which the thermosetting resin composition 2 of the semiconductor wafer 3 is bonded.
- thermosetting resin composition is formed of a resin composition containing an epoxy resin, even if the thermosetting resin composition is cut by dicing, the paste of the thermosetting resin composition of the thermosetting resin composition protrudes from the cut surface. Can be suppressed or prevented. As a result, it is possible to suppress or prevent the cut surfaces from reattaching (blocking), and the pickup described later can be performed more satisfactorily.
- the expanding apparatus includes a donut-shaped outer ring that can push down the dicing tape through the dicing ring, and an inner ring that has a smaller diameter than the outer ring and supports the dicing tape.
- the pickup method is not particularly limited, and various conventionally known methods can be employed. For example, a method of pushing up individual semiconductor chips from the base material side of the dicing tape with a needle and picking up the pushed-up semiconductor chips with a pickup device can be mentioned.
- the picked-up semiconductor chip 5 constitutes a laminate A integrally with the thermosetting resin composition 2 bonded to the circuit surface 3a.
- the pickup is performed after the pressure-sensitive adhesive layer 11b is irradiated with ultraviolet rays. Thereby, the adhesive force with respect to the semiconductor chip 5 of the adhesive layer 11b falls, and peeling of the semiconductor chip 5 becomes easy. As a result, the pickup can be performed without damaging the semiconductor chip 5.
- Conditions such as irradiation intensity and irradiation time at the time of ultraviolet irradiation are not particularly limited, and may be set as necessary.
- a light source used for ultraviolet irradiation for example, a low-pressure mercury lamp, a low-pressure high-power lamp, a medium-pressure mercury lamp, an electrodeless mercury lamp, a xenon flash lamp, an excimer lamp, an ultraviolet LED, or the like can be used.
- the mounting position of the semiconductor element 5 is obtained in advance by direct light, indirect light, infrared light, or the like, and the space between the adherend 16 and the semiconductor element 5 is set in the thermosetting resin composition according to the obtained mounting position.
- the semiconductor element 5 and the adherend 16 are electrically connected through the connection member 4 while being filled with 2 (see FIG. 2F).
- the mounting position can be easily determined by appropriately adjusting the transparency of the thermosetting resin composition 2 according to the average particle diameter of the inorganic filler.
- the semiconductor chip 5 of the stacked body A is fixed to the adherend 16 according to a conventional method with the circuit surface 3a of the semiconductor chip 5 facing the adherend 16.
- connection members 4 formed on the semiconductor chip 5 are brought into contact with a bonding conductive material 17 (solder or the like) attached to the connection pads of the adherend 16 while pressing the conductive material.
- a bonding conductive material 17 solder or the like
- the electrical connection between the semiconductor chip 5 and the adherend 16 can be secured, and the semiconductor chip 5 can be fixed to the adherend 16.
- the thermosetting resin composition 2 is affixed to the circuit surface 3 a of the semiconductor chip 5, the electrical connection between the semiconductor chip 5 and the adherend 16 is performed simultaneously with the electrical connection between the semiconductor chip 5 and the adherend 16. The space between them is filled with the thermosetting resin composition 2.
- the heating condition in the mounting process is 100 to 300 ° C.
- the pressurizing condition is 0.5 to 500 N.
- the adherend 16 various substrates such as a lead frame and a circuit board (such as a wiring circuit board), and other semiconductor elements can be used.
- the material of the substrate is not particularly limited, and examples thereof include a ceramic substrate and a plastic substrate.
- the plastic substrate include an epoxy substrate, a bismaleimide triazine substrate, a polyimide substrate, and a glass epoxy substrate.
- connection member and the conductive material are melted to connect the bumps 4 on the connection member forming surface 3a of the semiconductor chip 5 and the conductive material 17 on the surface of the adherend 16.
- the temperature at the time of melting the bump 4 and the conductive material 17 is usually about 260 ° C. (for example, 250 ° C. to 300 ° C.).
- the sealing sheet which concerns on this embodiment can have heat resistance which can endure the high temperature in this mounting process by forming the thermosetting resin composition 2 with an epoxy resin etc.
- thermosetting resin composition curing step After the electrical connection between the semiconductor element 5 and the adherend 16 is performed, the thermosetting resin composition 2 is cured by heating. As a result, the surface of the semiconductor element 5 can be protected, and the space between the semiconductor element 5 and the adherend 16 can be sealed to ensure the connection reliability of the semiconductor device.
- the heating temperature for curing the thermosetting resin composition is not particularly limited, and may be 150 to 200 ° C. for 10 to 120 minutes.
- a thermosetting resin composition hardens
- a post-sealing process may be performed to protect the entire semiconductor device 20 including the mounted semiconductor chip 5.
- the post-sealing process is performed using a sealing resin.
- the sealing conditions at this time are not particularly limited.
- the sealing resin is thermally cured by heating at 175 ° C. for 60 seconds to 90 seconds, but the present invention is not limited to this. For example, it can be cured at 165 ° C. to 185 ° C. for several minutes.
- the sealing resin is not particularly limited as long as it is an insulating resin (insulating resin), and can be appropriately selected from sealing materials such as known sealing resins. Is more preferable.
- sealing resin the resin composition containing an epoxy resin etc. are mentioned, for example.
- the epoxy resin include the epoxy resins exemplified above.
- a thermosetting resin other than an epoxy resin such as a phenol resin
- a thermoplastic resin may be included as a resin component. Good.
- a phenol resin it can utilize also as a hardening
- the semiconductor element 5 and the adherend 16 are connected via the bump (connection member) 4 formed on the semiconductor element 5 and the conductive material 17 provided on the adherend 16. Are electrically connected.
- the thermosetting resin composition 2 is disposed between the semiconductor element 5 and the adherend 16 so as to fill the space. Since the semiconductor device 20 is obtained by the above manufacturing method that employs the predetermined thermosetting resin composition 2, the surface protection of the semiconductor element 5, the filling of the space between the semiconductor element 5 and the adherend 16, and The electrical connection between the semiconductor element 5 and the adherend 16 becomes a sufficient level, and the semiconductor device 20 can exhibit high reliability.
- Second Embodiment In the first embodiment, a semiconductor wafer having a circuit formed on one side is used, whereas in the present embodiment, a semiconductor device is manufactured using a semiconductor wafer having a circuit formed on both sides. Further, since the semiconductor wafer used in this embodiment has a target thickness, the grinding step is omitted. Therefore, as a sealing sheet in 2nd Embodiment, the sealing sheet provided with a dicing tape and the thermosetting resin composition laminated
- a preparation process for preparing the sealing sheet, a semiconductor wafer having a circuit surface having connection members formed on both sides, and a thermosetting resin composition of the sealing sheet Bonding step for bonding, dicing step for dicing the semiconductor wafer to form a semiconductor element with the thermosetting resin composition, pickup for peeling the semiconductor element with the thermosetting resin composition from the sealing sheet A process is mentioned. Thereafter, the semiconductor device is manufactured by performing the steps after the mounting step.
- a sealing sheet including a dicing tape 41 and a thermosetting resin composition 42 laminated on the dicing tape 41 is prepared (see FIG. 3A).
- the dicing tape 41 includes a base material 41a and an adhesive layer 41b laminated on the base material 41a.
- the thermosetting resin composition 42 is laminated
- the base material 41a and the pressure-sensitive adhesive layer 41b of the dicing tape 41 and the thermosetting resin composition 42 those similar to those in the first embodiment can be used.
- the semiconductor wafer 43 on which the circuit surfaces having the connection members 44 are formed on both sides are bonded to the thermosetting resin composition 42 of the sealing sheet.
- the semiconductor wafer since the strength of the semiconductor wafer thinned to a predetermined thickness is weak, the semiconductor wafer may be fixed to a support such as support glass via a temporary fixing material (not shown) for reinforcement. .
- a temporary fixing material not shown
- the process of peeling a support body with a temporary fixing material may be included. Which circuit surface of the semiconductor wafer 43 and the thermosetting resin composition 42 are bonded together may be changed according to the structure of the target semiconductor device.
- the semiconductor wafer 43 is the same as the semiconductor wafer of the first embodiment except that the circuit surface having the connection member 44 is formed on both surfaces and has a predetermined thickness.
- the connection members 44 on both surfaces of the semiconductor wafer 43 may be electrically connected or may not be connected. Examples of the electrical connection between the connection members 44 include a connection through a via called a TSV format.
- the bonding conditions in the first embodiment can be suitably employed.
- the semiconductor wafer 43 and the thermosetting resin composition 42 are diced to form a semiconductor element 45 with the thermosetting resin composition (see FIG. 3B).
- the conditions in the first embodiment can be suitably employed. Since dicing is performed on the exposed circuit surface of the semiconductor wafer 43, detection of the dicing position is easy.
- the semiconductor element 45 with the thermosetting resin composition 42 is peeled from the dicing tape 41 (FIG. 3C).
- various conditions in the first embodiment can be suitably employed.
- the semiconductor element 45 and the adherend 66 are electrically connected through the connection member 44 while the space between the adherend 66 and the semiconductor element 45 is filled with the thermosetting resin composition 42 (See FIG. 3D).
- the thermosetting resin composition 42 See FIG. 3D.
- Various conditions in the first embodiment can be suitably employed as the conditions in the mounting process. Thereby, the semiconductor device 60 according to the present embodiment can be manufactured.
- thermosetting resin composition curing step and the sealing step may be performed as necessary.
- the back surface grinding tape is used as a constituent member of the sealing sheet.
- the base material alone is used without providing the adhesive layer of the back surface grinding tape. Therefore, as a sealing sheet of this embodiment, it will be in the state where a thermosetting resin composition was laminated on a substrate.
- the grinding process can be performed arbitrarily, ultraviolet irradiation before the pick-up process is not performed by omitting the adhesive layer. Except for these points, a predetermined semiconductor device can be manufactured through the same steps as in the first embodiment.
- Elastomer 1 Acrylic acid ester polymer based on ethyl acrylate-methyl methacrylate (trade name “Paracron W-197CM”, manufactured by Negami Kogyo Co., Ltd.)
- Elastomer 2 Acrylic ester polymer based on butyl acrylate-acrylonitrile (trade name “SG-28GM”, manufactured by Nagase Chemtex Co., Ltd.)
- Epoxy resin 1 Trade name “Epicoat 828”, manufactured by JER Corporation
- Epoxy resin 2 Trade name “Epicoat 1004”, manufactured by JER Corporation Phenolic resin 1: Trade name “MEH-7851M”, Meiwa Kasei Co., Ltd.
- phenol resin 2 Product name “MEH-7785-3H”, Meiwa Kasei Co., Ltd.
- phenol resin 3 Product name “P-200”, Arakawa Chemical Co., Ltd.
- phenol resin 4 Product name “DPP-M”, Nippon Petrochemical Co., Ltd.
- Manufactured inorganic filler 1 spherical silica (trade name “YC100C-MLC”, manufactured by Admatechs Co., Ltd.)
- Inorganic filler 2 Spherical silica (trade name “SO-25R”, manufactured by Admatechs Corporation)
- Organic acid o-anisic acid (trade name “Orthoanisic acid”, manufactured by Tokyo Chemical Industry Co., Ltd.)
- Curing agent Imidazole catalyst (trade name “2PHZ-PW”, manufactured by Shikoku Kasei Co., Ltd.)
- thermosetting resin composition having a thickness of 45 ⁇ m was prepared.
- thermosetting resin composition was bonded to the adhesive layer of a back grind tape (trade name “UB-2154”, manufactured by Nitto Denko Corporation) using a hand roller to prepare a sealing sheet.
- the thermal expansion coefficient ⁇ is first measured using a thermomechanical measuring apparatus (manufactured by TA Instrument Co., Ltd .: Model Q-400EM) after thermosetting the produced thermosetting resin composition at 175 ° C. for 1 hour. did. Specifically, the size of the measurement sample is 15 mm long ⁇ 5 mm wide ⁇ 200 ⁇ m thick. After the measurement sample is set in the film tension measurement jig of the above apparatus, the sample is pulled in the temperature range of ⁇ 50 to 300 ° C. The thermal expansion coefficient ⁇ was calculated from the expansion coefficient at 20 ° C. to 60 ° C. under the conditions of a load of 2 g and a temperature increase rate of 10 ° C./min. The results are shown in Table 1.
- the storage elastic modulus was measured by subjecting the prepared thermosetting resin composition to thermosetting treatment at 175 ° C. for 1 hour, and then using a solid viscoelasticity measuring apparatus (manufactured by Rheometric Scientific, Inc .: Model: RSA-III). It was measured. That is, the sample size is 40 mm long ⁇ 10 mm wide ⁇ 200 ⁇ m thick, the measurement specimen is set in a film tensile measurement jig, and the tensile storage elastic modulus and loss elastic modulus in the temperature range of ⁇ 50 to 300 ° C. are expressed as frequency. It was measured under the conditions of 1 Hz and a heating rate of 10 ° C./min, and obtained by reading the storage elastic modulus (E ′) at 25 ° C. The results are shown in Table 1.
- thermosetting resin composition is thermally cured by heat treatment at 175 ° C. for 1 hour, and then cut into a strip shape having a thickness of 200 ⁇ m, a length of 40 mm (measured length), and a width of 10 mm with a cutter knife, and solid viscoelasticity Storage modulus and loss modulus at ⁇ 50 to 300 ° C. were measured using a measuring device (RSAIII, manufactured by Rheometric Scientific Co., Ltd.). The measurement conditions were a frequency of 1 Hz and a heating rate of 10 ° C./min. Furthermore, the glass transition temperature was obtained by calculating the value of tan ⁇ (G ′′ (loss elastic modulus) / G ′ (storage elastic modulus)). The results are shown in Table 1.
- Pasting device Product name “DSA840-WS”, manufactured by Nitto Seiki Co., Ltd.
- Pasting speed 5 mm / min
- Pasting pressure 0.25 MPa
- the back surface of the silicon wafer was ground under the following conditions.
- the silicon wafer was peeled off from the back grind tape together with the thermosetting resin composition, and the silicon wafer was bonded and fixed on the adhesive layer of a dicing tape (DU-300, manufactured by Nitto Denko Corporation). At this time, the back surface of the silicon wafer and the adhesive layer were bonded together, and the thermosetting resin composition bonded to the circuit surface of the silicon wafer was exposed.
- a dicing tape (DU-300, manufactured by Nitto Denko Corporation).
- the semiconductor wafer was diced under the following conditions. Dicing was fully cut so as to obtain a chip size of 7.3 mm square.
- Dicing machine Product name “DFD-6361” manufactured by Disco Corporation Dicing ring: “2-8-1” (manufactured by Disco Corporation) Dicing speed: 30mm / sec Dicing blade: Z1; "203O-SE 27HCDD” manufactured by DISCO Z2: “203O-SE 27HCBB” manufactured by Disco Corporation Dicing blade rotation speed: Z1; 40,000 rpm Z2; 45,000 rpm Cut method: Step cut Wafer chip size: 7.3mm square
- thermosetting resin composition a laminated body of the thermosetting resin composition and the semiconductor chip with single-sided bumps was picked up by a push-up method using a needle from the base material side of each sealing sheet.
- the pickup conditions are as follows.
- thermocompression bonding with the BGA substrate facing the bump forming surface of the semiconductor chip under the following thermocompression bonding conditions.
- thermocompression bonding condition 2 following thermocompression bonding condition 1 was performed.
- ⁇ Thermocompression condition 1> Pickup device: Product name “FCB-3” manufactured by Panasonic Heating temperature: 150 ° C. Load: 98N Holding time: 10 seconds
- ⁇ Thermocompression condition 2> Pickup device: Product name “FCB-3” manufactured by Panasonic Heating temperature: 260 ° C. Load: 98N Holding time: 10 seconds
- Thermosetting resin composition 3 Semiconductor wafer 5 Semiconductor chip (semiconductor element) 16 adherend 20 semiconductor device
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Abstract
Description
水酸基当量が200g/eq以上であるノボラック型フェノール樹脂と
を含む半導体装置製造用の熱硬化性樹脂組成物である。
前記熱硬化性樹脂組成物を硬化させる硬化工程
を含む半導体装置の製造方法も含まれる。
図1に示すように、封止シート10は、裏面研削用テープ1と、裏面研削用テープ1上に積層されたシート状の熱硬化性樹脂組成物2とを備えている。なお、熱硬化性樹脂組成物2は、図1に示すように裏面研削用テープ1の全面に積層されていなくてもよく、半導体ウェハ3(図2A参照)との貼り合わせに十分なサイズで設けられていればよい。
本実施形態における熱硬化性樹脂組成物2はシート状であり、表面実装(例えばフリップチップ実装等)された半導体素子と被着体との間の空間を充填する封止用フィルム、あるいは半導体素子を被着体に固定するための接着フィルムとして好適に用いることができる。
エポキシ樹脂は、熱硬化性樹脂として一般に用いられるものであれば特に限定は無く、例えばビスフェノールA型、ビスフェノールF型、ビスフェノールS型、臭素化ビスフェノールA型、水添ビスフェノールA型、ビスフェノールAF型、ビフェニル型、ナフタレン型、フルオンレン型、フェノールノボラック型、オルソクレゾールノボラック型、トリスヒドロキシフェニルメタン型、テトラフェニロールエタン型等の二官能エポキシ樹脂や多官能エポキシ樹脂、又はヒダントイン型、トリスグリシジルイソシアヌレート型若しくはグリシジルアミン型等のエポキシ樹脂が用いられる。これらは単独で、又は2種以上を併用して用いることができる。これらのエポキシ樹脂のうちノボラック型エポキシ樹脂、ビフェニル型エポキシ樹脂、トリスヒドロキシフェニルメタン型樹脂又はテトラフェニロールエタン型エポキシ樹脂が特に好ましい。これらのエポキシ樹脂は、硬化剤としてのフェノール樹脂との反応性に富み、耐熱性等に優れるからである。
熱硬化性樹脂組成物2に含まれるノボラック型フェノール樹脂は、エポキシ樹脂の硬化剤として作用するものであり、その水酸基当量が200g/eq以上であれば特に限定されない。このような水酸基当量を有するノボラック型フェノール樹脂は、フェノール類と、このフェノール類との縮合反応し得る適度な分子鎖長を有する化合物(例えば、アルデヒド類、ビス(アルコキシメチル)ビフェニル類等)とを常法に従って反応させることにより得られる。また、市販の水酸基当量が200g/eq以上であるノボラック型フェノール樹脂も好適に用いることができ、例えば新日鉄化学製「SN-495」や明和化成製「MEH-7851H」等が挙げられる。なお、水酸基当量の上限は特に限定されないものの、熱硬化性樹脂組成物の硬化性やその硬化物の剛性等を考慮すると、250g/eq以下が好ましい。
熱硬化性樹脂組成物2は、上記エポキシ樹脂及び特定フェノール樹脂に加え、これら以外の熱硬化性樹脂や熱可塑性樹脂を含むことができる。
他の熱硬化性樹脂としては、アミノ樹脂、不飽和ポリエステル樹脂、ポリウレタン樹脂、シリコーン樹脂、又は熱硬化性ポリイミド樹脂等が挙げられる。これらの樹脂は、単独で又は2種以上を併用して用いることができる。
前記熱可塑性樹脂としては、天然ゴム、ブチルゴム、イソプレンゴム、クロロプレンゴム、エチレン-酢酸ビニル共重合体、エチレン-アクリル酸共重合体、エチレン-アクリル酸エステル共重合体、ポリブタジエン樹脂、ポリカーボネート樹脂、熱可塑性ポリイミド樹脂、6-ナイロンや6,6-ナイロン等のポリアミド樹脂、フェノキシ樹脂、アクリル樹脂、PETやPBT等の飽和ポリエステル樹脂、ポリアミドイミド樹脂、又はフッ素樹脂等が挙げられる。これらの熱可塑性樹脂は単独で、又は2種以上を併用して用いることができる。これらの熱可塑性樹脂のうち、イオン性不純物が少なく耐熱性が高く、半導体素子の信頼性を確保できるアクリル樹脂が特に好ましい。
エポキシ樹脂と特定フェノール樹脂の熱硬化促進触媒としては、特に制限されず、公知の熱硬化促進触媒の中から適宜選択して用いることができる。熱硬化促進触媒は単独で又は2種以上を組み合わせて用いることができる。熱硬化促進触媒としては、例えば、アミン系硬化促進剤、リン系硬化促進剤、イミダゾール系硬化促進剤、ホウ素系硬化促進剤、リン-ホウ素系硬化促進剤などを用いることができる。熱硬化促進触媒の添加量は、エポキシ樹脂と特定フェノール樹脂との合計100重量部に対し、0.1~5重量部が好ましい。
熱硬化性樹脂組成物2には、はんだバンプの表面の酸化膜を除去して半導体素子の実装を容易にするために、フラックス剤を添加してもよい。フラックス剤としては特に限定されず、従来公知のフラックス作用を有する化合物を用いることができ、例えば、ジフェノール酸、アジピン酸、アセチルサリチル酸、安息香酸、ベンジル酸、アゼライン酸、ベンジル安息香酸、マロン酸、2,2-ビス(ヒドロキシメチル)プロピオン酸、サリチル酸、o-メトキシ安息香酸、m-ヒドロキシ安息香酸、コハク酸、2,6-ジメトキシメチルパラクレゾール、安息香酸ヒドラジド、カルボヒドラジド、マロン酸ジヒドラジド、コハク酸ジヒドラジド、グルタル酸ジヒドラジド、サリチル酸ヒドラジド、イミノジ酢酸ジヒドラジド、イタコン酸ジヒドラジド、クエン酸トリヒドラジド、チオカルボヒドラジド、ベンゾフェノンヒドラゾン、4,4’-オキシビスベンゼンスルホニルヒドラジド及びアジピン酸ジヒドラジド等が挙げられる。フラックス剤の添加量は上記フラックス作用が発揮される程度であればよく、通常、熱硬化性樹脂組成物に含まれる樹脂成分100重量部に対して0.1~20重量部程度である。
本実施形態の熱硬化性樹脂組成物2を予めある程度架橋をさせておく場合には、作製に際し、重合体の分子鎖末端の官能基等と反応する多官能性化合物を架橋剤として添加させておくのがよい。これにより、高温下での接着特性を向上させ、耐熱性の改善を図ることができる。
また、熱硬化性樹脂組成物2には、無機充填剤を適宜配合することができる。無機充填剤の配合は、導電性の付与や熱伝導性の向上、貯蔵弾性率の調節等を可能にする。
なお、熱硬化性樹脂組成物2には、前記無機充填剤以外に、必要に応じて他の添加剤を適宜に配合することができる。他の添加剤としては、例えば難燃剤、シランカップリング剤又はイオントラップ剤等が挙げられる。前記難燃剤としては、例えば、三酸化アンチモン、五酸化アンチモン、臭素化エポキシ樹脂等が挙げられる。これらは、単独で、又は2種以上を併用して用いることができる。前記シランカップリング剤としては、例えば、β-(3、4-エポキシシクロヘキシル)エチルトリメトキシシラン、γ-グリシドキシプロピルトリメトキシシラン、γ-グリシドキシプロピルメチルジエトキシシラン等が挙げられる。これらの化合物は、単独で又は2種以上を併用して用いることができる。前記イオントラップ剤としては、例えばハイドロタルサイト類、水酸化ビスマス等が挙げられる。これらは、単独で又は2種以上を併用して用いることができる。
裏面研削用テープ1は、基材1aと、基材1a上に積層された粘着剤層1bとを備えている。なお、熱硬化性樹脂組成物2は、粘着剤層1b上に積層されている。
上記基材1aは封止シート10の強度母体となるものである。例えば、低密度ポリエチレン、直鎖状ポリエチレン、中密度ポリエチレン、高密度ポリエチレン、超低密度ポリエチレン、ランダム共重合ポリプロピレン、ブロック共重合ポリプロピレン、ホモポリプロレン、ポリブテン、ポリメチルペンテン等のポリオレフィン、エチレン-酢酸ビニル共重合体、アイオノマー樹脂、エチレン-(メタ)アクリル酸共重合体、エチレン-(メタ)アクリル酸エステル(ランダム、交互)共重合体、エチレン-ブテン共重合体、エチレン-ヘキセン共重合体、ポリウレタン、ポリエチレンテレフタレート、ポリエチレンナフタレート等のポリエステル、ポリカーボネート、ポリイミド、ポリエーテルエーテルケトン、ポリイミド、ポリエーテルイミド、ポリアミド、全芳香族ポリアミド、ポリフェニルスルフイド、アラミド(紙)、ガラス、ガラスクロス、フッ素樹脂、ポリ塩化ビニル、ポリ塩化ビニリデン、セルロース系樹脂、シリコーン樹脂、金属(箔)、紙等が挙げられる。粘着剤層1bが紫外線硬化型である場合、基材1aは紫外線に対し透過性を有するものが好ましい。
粘着剤層1bの形成に用いる粘着剤は、ダイシングの際に熱硬化性樹脂組成物を介して半導体ウェハ又は半導体チップをしっかり保持し、ピックアップ時に熱硬化性樹脂組成物付きの半導体チップを剥離可能に制御できるものであれば特に制限されない。例えば、アクリル系粘着剤、ゴム系粘着剤等の一般的な感圧性接着剤を用いることができる。上記感圧性接着剤としては、半導体ウェハやガラス等の汚染をきらう電子部品の超純水やアルコール等の有機溶剤による清浄洗浄性などの点から、アクリル系ポリマーをベースポリマーとするアクリル系粘着剤が好ましい。
本実施の形態に係る封止シート10は、例えば裏面研削用テープ1及び熱硬化性樹脂組成物2を別々に作製しておき、最後にこれらを貼り合わせることにより作成することができる。具体的には、以下のような手順に従って作製することができる。
次に、上記封止シートを利用する半導体装置の製造方法の一実施形態について説明する。本実施形態に係る半導体装置の製造方法は、半導体素子を被着体に前記熱硬化性樹脂組成物を介して固定する固定工程、及び前記熱硬化性樹脂組成物を硬化させる硬化工程を含む。ただし、本実施形態において、上記熱硬化性樹脂組成物は、裏面研削用テープ上に積層されて封止シートを形成しており、また、半導体素子の固定の際には、被着体と半導体素子とが電気的に接続されることになる。従って、より詳細には、本実施形態の半導体装置の製造方法は、半導体ウェハの接続部材が形成された回路面と上記封止シートの熱硬化性樹脂組成物とを貼り合わせる貼合せ工程、上記半導体ウェハの裏面を研削する研削工程、上記熱硬化性樹脂組成物とともに半導体ウェハを裏面研削用テープから剥離して該半導体ウェハをダイシングテープに貼り付けるウェハ固定工程、上記半導体ウェハをダイシングして上記熱硬化性樹脂組成物付きの半導体素子を形成するダイシング工程、及び上記熱硬化性樹脂組成物付きの半導体素子を上記ダイシングテープから剥離するピックアップ工程、上記被着体と上記半導体素子の間の空間を上記熱硬化性樹脂組成物で充填しつつ上記接続部材を介して上記半導体素子と上記被着体とを電気的に接続する接続工程、及び前記熱硬化性樹脂組成物を硬化させる硬化工程を含む。
貼合せ工程では、半導体ウェハ3の接続部材4が形成された回路面3aと上記封止シート10の熱硬化性樹脂組成物2とを貼り合わせる(図2A参照)。
半導体ウェハ3の回路面3aには、複数の接続部材4が形成されている(図2A参照)。バンプや導電材等の接続部材の材質としては、特に限定されず、例えば、錫-鉛系金属材、錫-銀系金属材、錫-銀-銅系金属材、錫-亜鉛系金属材、錫-亜鉛-ビスマス系金属材等のはんだ類(合金)や、金系金属材、銅系金属材などが挙げられる。接続部材の高さも用途に応じて定められ、一般的には15~100μm程度である。もちろん、半導体ウェハ3における個々の接続部材の高さは同一でも異なっていてもよい。
0.5≦Y/X≦2
まず、封止シート10の熱硬化性樹脂組成物2上に任意に設けられたセパレータを適宜に剥離し、図2Aに示すように、前記半導体ウェハ3の接続部材4が形成された回路面3aと熱硬化性樹脂組成物2とを対向させ、前記熱硬化性樹脂組成物2と前記半導体ウェハ3とを貼り合わせる(マウント)。
研削工程では、上記半導体ウェハ3の回路面3aとは反対側の面(すなわち、裏面)3bを研削する(図2B参照)。半導体ウェハ3の裏面研削に用いる薄型加工機としては特に限定されず、例えば研削機(バックグラインダー)、研磨パッド等を例示できる。また、エッチング等の化学的方法にて裏面研削を行ってもよい。裏面研削は、半導体ウェハが所望の厚さ(例えば、700~25μm)になるまで行われる。
研削工程後、熱硬化性樹脂組成物2を貼り付けた状態で半導体ウェハ3を裏面研削用テープ1から剥離し、半導体ウェハ3とダイシングテープ11とを貼り合わせる(図2C参照)。このとき、半導体ウェハ3の裏面3bとダイシングテープ11の粘着剤層11bとが対向するように貼り合わせる。従って、半導体ウェハ3の回路面3aに貼り合わされた熱硬化性樹脂組成物2は露出した状態となる。なお、ダイシングテープ11は、基材11a上に粘着剤層11bが積層された構造を有する。基材11a及び粘着剤層11bとしては、上記裏面研削用テープ1の基材1a及び粘着剤層1bの項で示した成分及び製法を用いて好適に作製することができる。また、市販のダイシングテープも好適に用いることができる。
ダイシング工程では、直接光や間接光、赤外線等により求めたダイシング位置に基づき、図2Dに示すように半導体ウェハ3及び熱硬化性樹脂組成物2をダイシングしてダイシングされた熱硬化性樹脂組成物付きの半導体素子5を形成する。熱硬化性樹脂組成物2の透明性を無機充填剤の平均粒径等により適宜調整することにより、ダイシング位置を容易に決定することができる。ダイシング工程を経ることで、半導体ウェハ3を所定のサイズに切断して個片化(小片化)し、半導体チップ(半導体素子)5を製造する。ここで得られる半導体チップ5は同形状に切断された熱硬化性樹脂組成物2と一体になっている。ダイシングは、半導体ウェハ3の熱硬化性樹脂組成物2を貼り合わせた回路面3aから常法に従い行われる。
ダイシングテープ11に接着固定された半導体チップ5を回収するために、図2Eに示すように、熱硬化性樹脂組成物2付きの半導体チップ5のピックアップを行って、半導体チップ5と熱硬化性樹脂組成物2の積層体Aをダイシングテープ11より剥離する。
実装工程では、半導体素子5の実装位置を直接光や間接光、赤外線等により予め求めておき、求めた実装位置に従って、被着体16と半導体素子5の間の空間を熱硬化性樹脂組成物2で充填しつつ接続部材4を介して半導体素子5と被着体16とを電気的に接続する(図2F参照)。熱硬化性樹脂組成物2の透明性を無機充填剤の平均粒径等により適宜調整することにより、実装位置を容易に決定することができる。具体的には、積層体Aの半導体チップ5を、半導体チップ5の回路面3aが被着体16と対向する形態で、被着体16に常法に従い固定させる。例えば、半導体チップ5に形成されているバンプ(接続部材)4を、被着体16の接続パッドに被着された接合用の導電材17(はんだなど)に接触させて押圧しながら導電材を溶融させることにより、半導体チップ5と被着体16との電気的接続を確保し、半導体チップ5を被着体16に固定させることができる。半導体チップ5の回路面3aには熱硬化性樹脂組成物2が貼り付けられているので、半導体チップ5と被着体16との電気的接続と同時に、半導体チップ5と被着体16との間の空間が熱硬化性樹脂組成物2により充填されることになる。
半導体素子5と被着体16との電気的接続を行った後は、熱硬化性樹脂組成物2を加熱により硬化させる。これにより、半導体素子5の表面を保護することができるとともに、半導体素子5と被着体16との間の空間を封止して半導体装置の接続信頼性を確保することができる。熱硬化性樹脂組成物の硬化のための加熱温度としては特に限定されず、150~200℃で10~120分間であればよい。なお、実装工程における加熱処理により熱硬化性樹脂組成物が硬化する場合、本工程は省略することができる。
次に、実装された半導体チップ5を備える半導体装置20全体を保護するために後封止工程を行ってもよい。後封止工程は、封止樹脂を用いて行われる。このときの封止条件としては特に限定されないが、通常、175℃で60秒間~90秒間の加熱を行うことにより、封止樹脂の熱硬化が行われるが、本発明はこれに限定されず、例えば165℃~185℃で、数分間キュアすることができる。
次に、当該封止シートを用いて得られる半導体装置について図面を参照しつつ説明する(図2F参照)。本実施形態に係る半導体装置20では、半導体素子5と被着体16とが、半導体素子5上に形成されたバンプ(接続部材)4及び被着体16上に設けられた導電材17を介して電気的に接続されている。また、半導体素子5と被着体16との間には、その空間を充填するように熱硬化性樹脂組成物2が配置されている。半導体装置20は、所定の熱硬化性樹脂組成物2を採用する上記製造方法にて得られるので、半導体素子5の表面保護、半導体素子5と被着体16との間の空間の充填、及び半導体素子5と被着体16との間の電気的接続がそれぞれ十分なレベルとなり、半導体装置20として高い信頼性を発揮することができる。
第1実施形態では片面に回路が形成された半導体ウェハを用いているのに対し、本実施形態では両面に回路が形成された半導体ウェハを用いて半導体装置を製造する。また、本実施形態で用いる半導体ウェハは目的とする厚さを有していることから、研削工程は省略される。従って、第2実施形態での封止シートとしては、ダイシングテープと該ダイシングテープ上に積層された熱硬化性樹脂組成物とを備える封止シートを用いる。第2実施形態での代表的な工程として、上記封止シートを準備する準備工程、接続部材を有する回路面が両面に形成された半導体ウェハと上記封止シートの熱硬化性樹脂組成物とを貼り合わせる貼合せ工程、上記半導体ウェハをダイシングして上記熱硬化性樹脂組成物付きの半導体素子を形成するダイシング工程、上記熱硬化性樹脂組成物付きの半導体素子を上記封止シートから剥離するピックアップ工程が挙げられる。その後、実装工程以降の工程を行って半導体装置を製造する。
準備工程では、ダイシングテープ41と該ダイシングテープ41上に積層された熱硬化性樹脂組成物42とを備える封止シートを準備する(図3A参照)。ダイシングテープ41は、基材41aと、基材41a上に積層された粘着剤層41bとを備えている。なお、熱硬化性樹脂組成物42は、粘着剤層41b上に積層されている。このようなダイシングテープ41の基材41a及び粘着剤層41b、並びに熱硬化性樹脂組成物42としては、第1実施形態と同様のものを用いることができる。
貼合せ工程では、図3Aに示すように、接続部材44を有する回路面が両面に形成された半導体ウェハ43と上記封止シートの熱硬化性樹脂組成物42とを貼り合わせる。なお、所定の厚さに薄型化された半導体ウェハの強度は弱いことから、補強のために半導体ウェハを仮固定材を介してサポートガラス等の支持体に固定することがある(図示せず)。この場合は、半導体ウェハと熱硬化性樹脂組成物との貼り合わせ後に、仮固定材とともに支持体を剥離する工程を含んでいてもよい。半導体ウェハ43のいずれの回路面と熱硬化性樹脂組成物42とを貼り合わせるかは、目的とする半導体装置の構造に応じて変更すればよい。
ダイシング工程では、上記半導体ウェハ43及び熱硬化性樹脂組成物42をダイシングして上記熱硬化性樹脂組成物付きの半導体素子45を形成する(図3B参照)。ダイシング条件としては、第1実施形態における諸条件を好適に採用することができる。なお、ダイシングは、半導体ウェハ43の露出した回路面に対して行うので、ダイシング位置の検出は容易である。
ピックアップ工程では、上記熱硬化性樹脂組成物42付きの半導体素子45を上記ダイシングテープ41から剥離する(図3C)。ピックアップ条件としては、第1実施形態における諸条件を好適に採用することができる。
実装工程では、被着体66と半導体素子45の間の空間を熱硬化性樹脂組成物42で充填しつつ接続部材44を介して半導体素子45と被着体66とを電気的に接続する(図3D参照)。実装工程における条件は、第1実施形態における諸条件を好適に採用することができる。これにより、本実施形態に係る半導体装置60を製造することができる。
第1実施形態では封止シートの構成部材として裏面研削用テープを用いたが、本実施形態では該裏面研削用テープの粘着剤層を設けずに基材単独を用いる。従って、本実施形態の封止シートとしては、基材上に熱硬化性樹脂組成物が積層された状態となる。本実施形態では研削工程は任意に行うことができるものの、ピックアップ工程前の紫外線照射は粘着剤層の省略により行わない。これらの点を除けば、第1実施形態と同様の工程を経ることで所定の半導体装置を製造することができる。
(封止シートの作製)
以下の成分を表1に示す割合でメチルエチルケトンに溶解して、固形分濃度が23.6~60.6重量%となる接着剤組成物の溶液を調製した。
エラストマー2:アクリル酸ブチルーアクリロニトリルを主成分とするアクリル酸エステル系ポリマー(商品名「SG-28GM」、長瀬ケムテックス株式会社製)
エポキシ樹脂1:商品名「エピコート828」、JER株式会社製
エポキシ樹脂2:商品名「エピコート1004」、JER株式会社製
フェノール樹脂1:商品名「MEH-7851M」、明和化成株式会社製
フェノール樹脂2:商品名「MEH-7851-3H」、明和化成株式会社製
フェノール樹脂3:商品名「P-200」、荒川化学株式会社製
フェノール樹脂4:商品名「DPP-M」、日本石油化学(株)製
無機充填剤1:球状シリカ(商品名「YC100C―MLC」、株式会社アドマテックス製)
無機充填剤2:球状シリカ(商品名「SO-25R」、株式会社アドマテックス社製)
有機酸:o-アニス酸(商品名「オルトアニス酸」、東京化成株式会社製)
硬化剤:イミダゾール触媒(商品名「2PHZ-PW」、四国化成株式会社製)
熱膨張率αは、まず作製した熱硬化性樹脂組成物を175℃で1時間熱硬化処理してから、熱機械測定装置(ティーエーインスツルメント社製:形式Q-400EM)を用いて測定した。具体的には、測定試料のサイズを長さ15mm×幅5mm×厚さ200μmとし、測定試料を上記装置のフィルム引張測定用治具にセットした後、-50~300℃の温度域で、引張荷重2g、昇温速度10℃/minの条件下におき、20℃~60℃での膨張率から熱膨張係数αを算出した。結果を表に1示す。
貯蔵弾性率の測定は、作製した熱硬化性樹脂組成物を175℃で1時間熱硬化処理してから、固体粘弾性測定装置(レオメトリックサイエンティック社製:形式:RSA-III)を用いて測定した。すなわち、サンプルサイズを長さ40mm×幅10mm×厚さ200μmとし、測定試料をフィルム引っ張り測定用治具にセットし-50~300℃の温度域での引張貯蔵弾性率及び損失弾性率を、周波数1Hz、昇温速度10℃/minの条件下で測定し、25℃での貯蔵弾性率(E’)を読み取ることにより得た。結果を表に1示す。
熱硬化性樹脂組成物のガラス転移温度の測定方法は以下のとおりである。まず、熱硬化性樹脂組成物を175℃で1時間の加熱処理により熱硬化させ、その後厚さ200μm、長さ40mm(測定長さ)、幅10mmの短冊状にカッターナイフで切り出し、固体粘弾性測定装置(RSAIII、レオメトリックサイエンティフィック(株)製)を用いて、-50~300℃における貯蔵弾性率及び損失弾性率を測定した。測定条件は、周波数1Hz、昇温速度10℃/minとした。さらに、tanδ(G’’(損失弾性率)/G’(貯蔵弾性率))の値を算出することによりガラス転移温度を得た。結果を表に1示す。
片面にバンプが形成されている片面バンプ付きシリコンウェハを用意し、この片面バンプ付きシリコンウェハのバンプが形成されている側の面に、作製した封止シートを、熱硬化性樹脂組成物を貼り合わせ面として貼り合わせた。片面バンプ付きシリコンウェハとしては、以下のものを用いた。また、貼り合わせ条件は以下の通りである。熱硬化性樹脂組成物の厚さY(=45μm)の接続部材の高さX(=45μm)に対する比(Y/X)は、1であった。
シリコンウェハの直径:8インチ
シリコンウェハの厚さ:0.7mm(700μm)
バンプの高さ:45μm
バンプのピッチ:50μm
バンプの材質:はんだ
貼り付け装置:商品名「DSA840-WS」、日東精機株式会社製
貼り付け速度:5mm/min
貼り付け圧力:0.25MPa
貼り付け時のステージ温度:80℃
貼り付け時の減圧度:150Pa
研削装置:商品名「DFG-8560」、ディスコ社製
半導体ウェハ:厚さ0.7mm(700μm)から0.2mm(200μm)に裏面研削
ダイシング装置:商品名「DFD-6361」ディスコ社製
ダイシングリング:「2-8-1」(ディスコ社製)
ダイシング速度:30mm/sec
ダイシングブレード:
Z1;ディスコ社製「203O-SE 27HCDD」
Z2;ディスコ社製「203O-SE 27HCBB」
ダイシングブレード回転数:
Z1;40,000rpm
Z2;45,000rpm
カット方式:ステップカット
ウェハチップサイズ:7.3mm角
ピックアップ装置:商品名「SPA-300」株式会社新川社製
ニードル本数:9本
ニードル突き上げ量:500μm(0.5mm)
ニードル突き上げ速度:20mm/秒
ピックアップ時間:1秒
エキスパンド量:3mm
ピックアップ装置:商品名「FCB-3」パナソニック製
加熱温度:150℃
荷重:98N
保持時間:10秒
ピックアップ装置:商品名「FCB-3」パナソニック製
加熱温度:260℃
荷重:98N
保持時間:10秒
実施例及び比較例に係る半導体装置を各10サンプル作成し、-55℃~125℃を30分で1サイクルする熱サイクルを500サイクル繰り返した後、半導体装置を包埋用エポキシ樹脂で包埋した。次いで、半導体装置をはんだ接合部が露出するように基板に垂直な方向で切断し、露出したはんだ接合部の断面を研磨した。その後、研磨したはんだ接合部の断面を光学顕微鏡(倍率:1000倍)により観察し、はんだ接合部が破断していない場合を「○」、はんだ接合部が1サンプルでも破断していた場合を「×」として評価した。結果を表1に示す。
3 半導体ウェハ
5 半導体チップ(半導体素子)
16 被着体
20 半導体装置
Claims (8)
- エポキシ樹脂と、
水酸基当量が200g/eq以上であるノボラック型フェノール樹脂と
を含む半導体装置製造用の熱硬化性樹脂組成物。 - 半導体素子封止用である請求項1に記載の熱硬化性樹脂組成物。
- 平均粒径が10nm以上1000nm以下の無機充填剤を含む請求項1~3のいずれか1項に記載の熱硬化性樹脂組成物。
- 175℃で1時間熱処理した後の熱膨張係数αが10ppm/K以上200ppm/K以下である請求項1~4のいずれか1項に記載の熱硬化性樹脂組成物。
- 175℃で1時間熱処理した後の貯蔵弾性率E’が100MPa以上10000MPa以下である請求項1~5のいずれか1項に記載の熱硬化性樹脂組成物。
- シート状である請求項1~6のいずれか1項に記載の熱硬化性樹脂組成物。
- 半導体素子を被着体に請求項1~7のいずれか1項に記載の熱硬化性樹脂組成物を介して固定する固定工程、及び
前記熱硬化性樹脂組成物を硬化させる硬化工程
を含む半導体装置の製造方法。
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- 2014-04-11 WO PCT/JP2014/060477 patent/WO2014171404A1/ja active Application Filing
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TW201444934A (zh) | 2014-12-01 |
CN105143344A (zh) | 2015-12-09 |
JP2014210880A (ja) | 2014-11-13 |
US20160075871A1 (en) | 2016-03-17 |
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