WO2014126037A1 - 有機エレクトロルミネッセンス素子及び照明装置 - Google Patents
有機エレクトロルミネッセンス素子及び照明装置 Download PDFInfo
- Publication number
- WO2014126037A1 WO2014126037A1 PCT/JP2014/053028 JP2014053028W WO2014126037A1 WO 2014126037 A1 WO2014126037 A1 WO 2014126037A1 JP 2014053028 W JP2014053028 W JP 2014053028W WO 2014126037 A1 WO2014126037 A1 WO 2014126037A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- light
- gas barrier
- light emitting
- refractive index
- Prior art date
Links
- 239000010410 layer Substances 0.000 claims abstract description 804
- 230000004888 barrier function Effects 0.000 claims abstract description 250
- 239000000758 substrate Substances 0.000 claims abstract description 163
- 238000009826 distribution Methods 0.000 claims abstract description 72
- 239000000203 mixture Substances 0.000 claims abstract description 48
- 239000000470 constituent Substances 0.000 claims abstract description 18
- 239000002346 layers by function Substances 0.000 claims abstract description 13
- 238000000149 argon plasma sintering Methods 0.000 claims description 132
- 239000011230 binding agent Substances 0.000 claims description 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 238000005401 electroluminescence Methods 0.000 claims description 27
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 18
- 150000003961 organosilicon compounds Chemical class 0.000 claims description 14
- 235000012239 silicon dioxide Nutrition 0.000 claims description 14
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 239000007795 chemical reaction product Substances 0.000 claims description 8
- 239000004408 titanium dioxide Substances 0.000 claims description 7
- 239000010954 inorganic particle Substances 0.000 claims description 4
- 229910021331 inorganic silicon compound Inorganic materials 0.000 claims description 4
- 239000012298 atmosphere Substances 0.000 abstract description 41
- 238000003860 storage Methods 0.000 abstract description 11
- 230000006866 deterioration Effects 0.000 abstract description 10
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 310
- 239000007789 gas Substances 0.000 description 307
- 239000000463 material Substances 0.000 description 129
- 238000000034 method Methods 0.000 description 112
- 239000002245 particle Substances 0.000 description 98
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 91
- 229910052760 oxygen Inorganic materials 0.000 description 86
- 239000001301 oxygen Substances 0.000 description 85
- 150000001875 compounds Chemical class 0.000 description 79
- 238000004519 manufacturing process Methods 0.000 description 79
- 239000011347 resin Substances 0.000 description 76
- 229920005989 resin Polymers 0.000 description 76
- 239000006185 dispersion Substances 0.000 description 54
- -1 acrylic ester Chemical class 0.000 description 51
- 238000000576 coating method Methods 0.000 description 47
- 239000000243 solution Substances 0.000 description 43
- 239000011248 coating agent Substances 0.000 description 40
- 229910010413 TiO 2 Inorganic materials 0.000 description 36
- 238000002347 injection Methods 0.000 description 36
- 239000007924 injection Substances 0.000 description 36
- 229920001709 polysilazane Polymers 0.000 description 33
- 230000015572 biosynthetic process Effects 0.000 description 31
- 229910052799 carbon Inorganic materials 0.000 description 30
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 29
- 229910052709 silver Inorganic materials 0.000 description 29
- 239000002904 solvent Substances 0.000 description 29
- 230000005525 hole transport Effects 0.000 description 28
- 239000004332 silver Substances 0.000 description 28
- 229910052751 metal Inorganic materials 0.000 description 27
- 239000002184 metal Substances 0.000 description 27
- 229910052710 silicon Inorganic materials 0.000 description 27
- 230000000903 blocking effect Effects 0.000 description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 24
- 239000007788 liquid Substances 0.000 description 23
- 238000002360 preparation method Methods 0.000 description 23
- 239000003566 sealing material Substances 0.000 description 23
- 239000007787 solid Substances 0.000 description 23
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 22
- 229920000642 polymer Polymers 0.000 description 22
- 238000003756 stirring Methods 0.000 description 22
- 238000010438 heat treatment Methods 0.000 description 21
- 238000007740 vapor deposition Methods 0.000 description 21
- 229910052757 nitrogen Inorganic materials 0.000 description 20
- YKYONYBAUNKHLG-UHFFFAOYSA-N propyl acetate Chemical compound CCCOC(C)=O YKYONYBAUNKHLG-UHFFFAOYSA-N 0.000 description 20
- 230000006870 function Effects 0.000 description 19
- 230000003746 surface roughness Effects 0.000 description 19
- 238000000605 extraction Methods 0.000 description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 17
- 239000000853 adhesive Substances 0.000 description 17
- 230000001070 adhesive effect Effects 0.000 description 17
- 238000006243 chemical reaction Methods 0.000 description 17
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 17
- 125000004430 oxygen atom Chemical group O* 0.000 description 17
- 238000004528 spin coating Methods 0.000 description 17
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 16
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 15
- 238000005229 chemical vapour deposition Methods 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 229910052782 aluminium Inorganic materials 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- 239000002585 base Substances 0.000 description 14
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 14
- 229910045601 alloy Inorganic materials 0.000 description 13
- 239000000956 alloy Substances 0.000 description 13
- 150000001721 carbon Chemical group 0.000 description 13
- 238000004544 sputter deposition Methods 0.000 description 13
- 238000002834 transmittance Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 12
- 238000002156 mixing Methods 0.000 description 12
- 230000001681 protective effect Effects 0.000 description 12
- 239000002033 PVDF binder Substances 0.000 description 11
- 239000000975 dye Substances 0.000 description 11
- 230000002209 hydrophobic effect Effects 0.000 description 11
- 238000005259 measurement Methods 0.000 description 11
- 230000003287 optical effect Effects 0.000 description 11
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 11
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 239000002994 raw material Substances 0.000 description 11
- 239000000126 substance Substances 0.000 description 10
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 9
- 239000011777 magnesium Substances 0.000 description 9
- 229910052749 magnesium Inorganic materials 0.000 description 9
- 125000004433 nitrogen atom Chemical group N* 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 239000012495 reaction gas Substances 0.000 description 9
- 238000004381 surface treatment Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 125000004429 atom Chemical group 0.000 description 8
- 239000011324 bead Substances 0.000 description 8
- 239000003054 catalyst Substances 0.000 description 8
- 238000001035 drying Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 239000011368 organic material Substances 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 230000006798 recombination Effects 0.000 description 8
- 238000005215 recombination Methods 0.000 description 8
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 8
- 229910052724 xenon Inorganic materials 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 229910002808 Si–O–Si Inorganic materials 0.000 description 7
- 239000003086 colorant Substances 0.000 description 7
- 238000001723 curing Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 239000007772 electrode material Substances 0.000 description 7
- 238000009472 formulation Methods 0.000 description 7
- 239000011261 inert gas Substances 0.000 description 7
- 239000011698 potassium fluoride Substances 0.000 description 7
- 235000003270 potassium fluoride Nutrition 0.000 description 7
- 238000007639 printing Methods 0.000 description 7
- 238000006862 quantum yield reaction Methods 0.000 description 7
- 239000010453 quartz Substances 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- 238000007789 sealing Methods 0.000 description 7
- 229910021642 ultra pure water Inorganic materials 0.000 description 7
- 239000012498 ultrapure water Substances 0.000 description 7
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 6
- 229910007991 Si-N Inorganic materials 0.000 description 6
- 229910006294 Si—N Inorganic materials 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 239000010419 fine particle Substances 0.000 description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 6
- 229910010272 inorganic material Inorganic materials 0.000 description 6
- 230000035699 permeability Effects 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 description 6
- 239000005020 polyethylene terephthalate Substances 0.000 description 6
- 229920001296 polysiloxane Polymers 0.000 description 6
- 229920000734 polysilsesquioxane polymer Polymers 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 6
- 125000000217 alkyl group Chemical group 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 5
- 125000003118 aryl group Chemical group 0.000 description 5
- 238000005266 casting Methods 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000009499 grossing Methods 0.000 description 5
- 229930195733 hydrocarbon Natural products 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- 229910052809 inorganic oxide Inorganic materials 0.000 description 5
- 230000001678 irradiating effect Effects 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 5
- 229910052753 mercury Inorganic materials 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 5
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 4
- 229910008051 Si-OH Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910006358 Si—OH Inorganic materials 0.000 description 4
- 238000004220 aggregation Methods 0.000 description 4
- 230000002776 aggregation Effects 0.000 description 4
- 229920001577 copolymer Polymers 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000007850 fluorescent dye Substances 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 230000005865 ionizing radiation Effects 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical class OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 4
- 239000004417 polycarbonate Substances 0.000 description 4
- 229920000515 polycarbonate Polymers 0.000 description 4
- 229920000573 polyethylene Polymers 0.000 description 4
- 229920000307 polymer substrate Polymers 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 3
- 239000004793 Polystyrene Substances 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 125000003342 alkenyl group Chemical group 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000003197 catalytic effect Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 230000005281 excited state Effects 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910001507 metal halide Inorganic materials 0.000 description 3
- 150000005309 metal halides Chemical class 0.000 description 3
- 229910000000 metal hydroxide Inorganic materials 0.000 description 3
- 150000004692 metal hydroxides Chemical class 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 3
- 229910052754 neon Inorganic materials 0.000 description 3
- 150000002894 organic compounds Chemical class 0.000 description 3
- 150000004866 oxadiazoles Chemical class 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 229920002492 poly(sulfone) Polymers 0.000 description 3
- 239000011112 polyethylene naphthalate Substances 0.000 description 3
- 239000002861 polymer material Substances 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 150000002910 rare earth metals Chemical class 0.000 description 3
- 238000002407 reforming Methods 0.000 description 3
- 239000011342 resin composition Substances 0.000 description 3
- 229930195734 saturated hydrocarbon Natural products 0.000 description 3
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 3
- KWEKXPWNFQBJAY-UHFFFAOYSA-N (dimethyl-$l^{3}-silanyl)oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](C)C KWEKXPWNFQBJAY-UHFFFAOYSA-N 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 2
- KDCGOANMDULRCW-UHFFFAOYSA-N 7H-purine Chemical compound N1=CNC2=NC=NC2=C1 KDCGOANMDULRCW-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- 229920008347 Cellulose acetate propionate Polymers 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 2
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- 229920000877 Melamine resin Polymers 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004697 Polyetherimide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- 229910008072 Si-N-Si Inorganic materials 0.000 description 2
- 229910020286 SiOxNy Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- DZBUGLKDJFMEHC-UHFFFAOYSA-N acridine Chemical compound C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 125000003710 aryl alkyl group Chemical group 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 description 2
- 230000004397 blinking Effects 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 2
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 229920002678 cellulose Polymers 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 125000000623 heterocyclic group Chemical group 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 150000002484 inorganic compounds Chemical class 0.000 description 2
- 150000002504 iridium compounds Chemical class 0.000 description 2
- AWJUIBRHMBBTKR-UHFFFAOYSA-N isoquinoline Chemical compound C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920001230 polyarylate Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 229920001601 polyetherimide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 150000003112 potassium compounds Chemical class 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229940090181 propyl acetate Drugs 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- XSCHRSMBECNVNS-UHFFFAOYSA-N quinoxaline Chemical compound N1=CC=NC2=CC=CC=C21 XSCHRSMBECNVNS-UHFFFAOYSA-N 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 241000894007 species Species 0.000 description 2
- 238000013112 stability test Methods 0.000 description 2
- 235000021286 stilbenes Nutrition 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 125000004434 sulfur atom Chemical group 0.000 description 2
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 2
- 229920001187 thermosetting polymer Polymers 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 230000037303 wrinkles Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- JHPBZFOKBAGZBL-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylprop-2-enoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)=C JHPBZFOKBAGZBL-UHFFFAOYSA-N 0.000 description 1
- QGKMIGUHVLGJBR-UHFFFAOYSA-M (4z)-1-(3-methylbutyl)-4-[[1-(3-methylbutyl)quinolin-1-ium-4-yl]methylidene]quinoline;iodide Chemical compound [I-].C12=CC=CC=C2N(CCC(C)C)C=CC1=CC1=CC=[N+](CCC(C)C)C2=CC=CC=C12 QGKMIGUHVLGJBR-UHFFFAOYSA-M 0.000 description 1
- UWRZIZXBOLBCON-VOTSOKGWSA-N (e)-2-phenylethenamine Chemical class N\C=C\C1=CC=CC=C1 UWRZIZXBOLBCON-VOTSOKGWSA-N 0.000 description 1
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- VERMWGQSKPXSPZ-BUHFOSPRSA-N 1-[(e)-2-phenylethenyl]anthracene Chemical class C=1C=CC2=CC3=CC=CC=C3C=C2C=1\C=C\C1=CC=CC=C1 VERMWGQSKPXSPZ-BUHFOSPRSA-N 0.000 description 1
- ZHKJHQBOAJQXQR-UHFFFAOYSA-N 1H-azirine Chemical compound N1C=C1 ZHKJHQBOAJQXQR-UHFFFAOYSA-N 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- SULWTXOWAFVWOY-PHEQNACWSA-N 2,3-bis[(E)-2-phenylethenyl]pyrazine Chemical class C=1C=CC=CC=1/C=C/C1=NC=CN=C1\C=C\C1=CC=CC=C1 SULWTXOWAFVWOY-PHEQNACWSA-N 0.000 description 1
- MVWPVABZQQJTPL-UHFFFAOYSA-N 2,3-diphenylcyclohexa-2,5-diene-1,4-dione Chemical class O=C1C=CC(=O)C(C=2C=CC=CC=2)=C1C1=CC=CC=C1 MVWPVABZQQJTPL-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- IJVRPNIWWODHHA-UHFFFAOYSA-N 2-cyanoprop-2-enoic acid Chemical class OC(=O)C(=C)C#N IJVRPNIWWODHHA-UHFFFAOYSA-N 0.000 description 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 description 1
- HONWGFNQCPRRFM-UHFFFAOYSA-N 2-n-(3-methylphenyl)-1-n,1-n,2-n-triphenylbenzene-1,2-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C(=CC=CC=2)N(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 HONWGFNQCPRRFM-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- VHMICKWLTGFITH-UHFFFAOYSA-N 2H-isoindole Chemical compound C1=CC=CC2=CNC=C21 VHMICKWLTGFITH-UHFFFAOYSA-N 0.000 description 1
- MGADZUXDNSDTHW-UHFFFAOYSA-N 2H-pyran Chemical compound C1OC=CC=C1 MGADZUXDNSDTHW-UHFFFAOYSA-N 0.000 description 1
- AGIJRRREJXSQJR-UHFFFAOYSA-N 2h-thiazine Chemical compound N1SC=CC=C1 AGIJRRREJXSQJR-UHFFFAOYSA-N 0.000 description 1
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- UIKUBYKUYUSRSM-UHFFFAOYSA-N 3-morpholinopropylamine Chemical compound NCCCN1CCOCC1 UIKUBYKUYUSRSM-UHFFFAOYSA-N 0.000 description 1
- AHDTYXOIJHCGKH-UHFFFAOYSA-N 4-[[4-(dimethylamino)-2-methylphenyl]-phenylmethyl]-n,n,3-trimethylaniline Chemical compound CC1=CC(N(C)C)=CC=C1C(C=1C(=CC(=CC=1)N(C)C)C)C1=CC=CC=C1 AHDTYXOIJHCGKH-UHFFFAOYSA-N 0.000 description 1
- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 description 1
- DUSWRTUHJVJVRY-UHFFFAOYSA-N 4-methyl-n-[4-[2-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]propan-2-yl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C(C)(C)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 DUSWRTUHJVJVRY-UHFFFAOYSA-N 0.000 description 1
- MVIXNQZIMMIGEL-UHFFFAOYSA-N 4-methyl-n-[4-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]phenyl]-n-(4-methylphenyl)aniline Chemical group C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 MVIXNQZIMMIGEL-UHFFFAOYSA-N 0.000 description 1
- XIQGFRHAIQHZBD-UHFFFAOYSA-N 4-methyl-n-[4-[[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]-phenylmethyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C(C=1C=CC=CC=1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 XIQGFRHAIQHZBD-UHFFFAOYSA-N 0.000 description 1
- ZYASLTYCYTYKFC-UHFFFAOYSA-N 9-methylidenefluorene Chemical class C1=CC=C2C(=C)C3=CC=CC=C3C2=C1 ZYASLTYCYTYKFC-UHFFFAOYSA-N 0.000 description 1
- VIJYEGDOKCKUOL-UHFFFAOYSA-N 9-phenylcarbazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2C2=CC=CC=C21 VIJYEGDOKCKUOL-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229920001817 Agar Polymers 0.000 description 1
- 238000006677 Appel reaction Methods 0.000 description 1
- NOWKCMXCCJGMRR-UHFFFAOYSA-N Aziridine Chemical compound C1CN1 NOWKCMXCCJGMRR-UHFFFAOYSA-N 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- 229920000298 Cellophane Polymers 0.000 description 1
- 229920000623 Cellulose acetate phthalate Polymers 0.000 description 1
- 229920001747 Cellulose diacetate Polymers 0.000 description 1
- 229920002284 Cellulose triacetate Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000284156 Clerodendrum quadriloculare Species 0.000 description 1
- 229910021595 Copper(I) iodide Inorganic materials 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 229920002307 Dextran Polymers 0.000 description 1
- 229920001353 Dextrin Polymers 0.000 description 1
- 239000004375 Dextrin Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910000799 K alloy Inorganic materials 0.000 description 1
- MPCRDALPQLDDFX-UHFFFAOYSA-L Magnesium perchlorate Chemical compound [Mg+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O MPCRDALPQLDDFX-UHFFFAOYSA-L 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 description 1
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N N-phenyl amine Natural products NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 1
- 229910000583 Nd alloy Inorganic materials 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229920001218 Pullulan Polymers 0.000 description 1
- 239000004373 Pullulan Substances 0.000 description 1
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004304 SiNy Inorganic materials 0.000 description 1
- 229910006360 Si—O—N Inorganic materials 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 229920010524 Syndiotactic polystyrene Polymers 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 229910021536 Zeolite Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910006501 ZrSiO Inorganic materials 0.000 description 1
- NNLVGZFZQQXQNW-ADJNRHBOSA-N [(2r,3r,4s,5r,6s)-4,5-diacetyloxy-3-[(2s,3r,4s,5r,6r)-3,4,5-triacetyloxy-6-(acetyloxymethyl)oxan-2-yl]oxy-6-[(2r,3r,4s,5r,6s)-4,5,6-triacetyloxy-2-(acetyloxymethyl)oxan-3-yl]oxyoxan-2-yl]methyl acetate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](OC(C)=O)[C@H]1OC(C)=O)O[C@H]1[C@@H]([C@@H](OC(C)=O)[C@H](OC(C)=O)[C@@H](COC(C)=O)O1)OC(C)=O)COC(=O)C)[C@@H]1[C@@H](COC(C)=O)O[C@@H](OC(C)=O)[C@H](OC(C)=O)[C@H]1OC(C)=O NNLVGZFZQQXQNW-ADJNRHBOSA-N 0.000 description 1
- FJWGYAHXMCUOOM-QHOUIDNNSA-N [(2s,3r,4s,5r,6r)-2-[(2r,3r,4s,5r,6s)-4,5-dinitrooxy-2-(nitrooxymethyl)-6-[(2r,3r,4s,5r,6s)-4,5,6-trinitrooxy-2-(nitrooxymethyl)oxan-3-yl]oxyoxan-3-yl]oxy-3,5-dinitrooxy-6-(nitrooxymethyl)oxan-4-yl] nitrate Chemical compound O([C@@H]1O[C@@H]([C@H]([C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O)O[C@H]1[C@@H]([C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@@H](CO[N+]([O-])=O)O1)O[N+]([O-])=O)CO[N+](=O)[O-])[C@@H]1[C@@H](CO[N+]([O-])=O)O[C@@H](O[N+]([O-])=O)[C@H](O[N+]([O-])=O)[C@H]1O[N+]([O-])=O FJWGYAHXMCUOOM-QHOUIDNNSA-N 0.000 description 1
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 239000008272 agar Substances 0.000 description 1
- 235000010419 agar Nutrition 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 229910001508 alkali metal halide Inorganic materials 0.000 description 1
- 150000008045 alkali metal halides Chemical class 0.000 description 1
- 150000001341 alkaline earth metal compounds Chemical class 0.000 description 1
- 125000003282 alkyl amino group Chemical group 0.000 description 1
- 125000005103 alkyl silyl group Chemical group 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 150000008425 anthrones Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229940045985 antineoplastic platinum compound Drugs 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- ZSIQJIWKELUFRJ-UHFFFAOYSA-N azepane Chemical compound C1CCCNCC1 ZSIQJIWKELUFRJ-UHFFFAOYSA-N 0.000 description 1
- XYOVOXDWRFGKEX-UHFFFAOYSA-N azepine Chemical compound N1C=CC=CC=C1 XYOVOXDWRFGKEX-UHFFFAOYSA-N 0.000 description 1
- HONIICLYMWZJFZ-UHFFFAOYSA-N azetidine Chemical compound C1CNC1 HONIICLYMWZJFZ-UHFFFAOYSA-N 0.000 description 1
- 238000007611 bar coating method Methods 0.000 description 1
- SGUXGJPBTNFBAD-UHFFFAOYSA-L barium iodide Chemical compound [I-].[I-].[Ba+2] SGUXGJPBTNFBAD-UHFFFAOYSA-L 0.000 description 1
- 229910001638 barium iodide Inorganic materials 0.000 description 1
- 229940075444 barium iodide Drugs 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000010504 bond cleavage reaction Methods 0.000 description 1
- 238000006664 bond formation reaction Methods 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 235000011132 calcium sulphate Nutrition 0.000 description 1
- 150000001718 carbodiimides Chemical class 0.000 description 1
- 239000000679 carrageenan Substances 0.000 description 1
- 229920001525 carrageenan Polymers 0.000 description 1
- 235000010418 carrageenan Nutrition 0.000 description 1
- 229940113118 carrageenan Drugs 0.000 description 1
- 239000005018 casein Substances 0.000 description 1
- BECPQYXYKAMYBN-UHFFFAOYSA-N casein, tech. Chemical compound NCCCCC(C(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(CC(C)C)N=C(O)C(CCC(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(C(C)O)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(COP(O)(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(N)CC1=CC=CC=C1 BECPQYXYKAMYBN-UHFFFAOYSA-N 0.000 description 1
- 235000021240 caseins Nutrition 0.000 description 1
- 125000002091 cationic group Chemical group 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920006217 cellulose acetate butyrate Polymers 0.000 description 1
- 229940081734 cellulose acetate phthalate Drugs 0.000 description 1
- MOOUSOJAOQPDEH-UHFFFAOYSA-K cerium(iii) bromide Chemical compound [Br-].[Br-].[Br-].[Ce+3] MOOUSOJAOQPDEH-UHFFFAOYSA-K 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- SURLGNKAQXKNSP-DBLYXWCISA-N chlorin Chemical compound C\1=C/2\N/C(=C\C3=N/C(=C\C=4NC(/C=C\5/C=CC/1=N/5)=CC=4)/C=C3)/CC\2 SURLGNKAQXKNSP-DBLYXWCISA-N 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
- 229960001231 choline Drugs 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- WCZVZNOTHYJIEI-UHFFFAOYSA-N cinnoline Chemical compound N1=NC=CC2=CC=CC=C21 WCZVZNOTHYJIEI-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229940044175 cobalt sulfate Drugs 0.000 description 1
- 229910000361 cobalt sulfate Inorganic materials 0.000 description 1
- KTVIXTQDYHMGHF-UHFFFAOYSA-L cobalt(2+) sulfate Chemical compound [Co+2].[O-]S([O-])(=O)=O KTVIXTQDYHMGHF-UHFFFAOYSA-L 0.000 description 1
- 238000004737 colorimetric analysis Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 150000001925 cycloalkenes Chemical class 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007791 dehumidification Methods 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 235000019425 dextrin Nutrition 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 238000001227 electron beam curing Methods 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 125000006575 electron-withdrawing group Chemical group 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 229920000775 emeraldine polymer Polymers 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- GCSJLQSCSDMKTP-UHFFFAOYSA-N ethenyl(trimethyl)silane Chemical compound C[Si](C)(C)C=C GCSJLQSCSDMKTP-UHFFFAOYSA-N 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 150000008376 fluorenones Chemical class 0.000 description 1
- GNBHRKFJIUUOQI-UHFFFAOYSA-N fluorescein Chemical compound O1C(=O)C2=CC=CC=C2C21C1=CC=C(O)C=C1OC1=CC(O)=CC=C21 GNBHRKFJIUUOQI-UHFFFAOYSA-N 0.000 description 1
- 239000003205 fragrance Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 150000002367 halogens Chemical group 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 description 1
- 229940083761 high-ceiling diuretics pyrazolone derivative Drugs 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 150000007857 hydrazones Chemical class 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- MTNDZQHUAFNZQY-UHFFFAOYSA-N imidazoline Chemical compound C1CN=CN1 MTNDZQHUAFNZQY-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 description 1
- PZOUSPYUWWUPPK-UHFFFAOYSA-N indole Natural products CC1=CC=CC2=C1C=CN2 PZOUSPYUWWUPPK-UHFFFAOYSA-N 0.000 description 1
- RKJUIXBNRJVNHR-UHFFFAOYSA-N indolenine Natural products C1=CC=C2CC=NC2=C1 RKJUIXBNRJVNHR-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910001872 inorganic gas Inorganic materials 0.000 description 1
- 229940079865 intestinal antiinfectives imidazole derivative Drugs 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- OTCKOJUMXQWKQG-UHFFFAOYSA-L magnesium bromide Chemical compound [Mg+2].[Br-].[Br-] OTCKOJUMXQWKQG-UHFFFAOYSA-L 0.000 description 1
- 229910001623 magnesium bromide Inorganic materials 0.000 description 1
- 229910001629 magnesium chloride Inorganic materials 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- BLQJIBCZHWBKSL-UHFFFAOYSA-L magnesium iodide Chemical compound [Mg+2].[I-].[I-] BLQJIBCZHWBKSL-UHFFFAOYSA-L 0.000 description 1
- 229910001641 magnesium iodide Inorganic materials 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 238000013008 moisture curing Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- TXXWBTOATXBWDR-UHFFFAOYSA-N n,n,n',n'-tetramethylhexane-1,6-diamine Chemical compound CN(C)CCCCCCN(C)C TXXWBTOATXBWDR-UHFFFAOYSA-N 0.000 description 1
- DMQSHEKGGUOYJS-UHFFFAOYSA-N n,n,n',n'-tetramethylpropane-1,3-diamine Chemical compound CN(C)CCCN(C)C DMQSHEKGGUOYJS-UHFFFAOYSA-N 0.000 description 1
- BBDFECYVDQCSCN-UHFFFAOYSA-N n-(4-methoxyphenyl)-4-[4-(n-(4-methoxyphenyl)anilino)phenyl]-n-phenylaniline Chemical group C1=CC(OC)=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC(OC)=CC=1)C1=CC=CC=C1 BBDFECYVDQCSCN-UHFFFAOYSA-N 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 125000005375 organosiloxane group Chemical group 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 150000002908 osmium compounds Chemical class 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical group C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- 150000007978 oxazole derivatives Chemical class 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- GPRIERYVMZVKTC-UHFFFAOYSA-N p-quaterphenyl Chemical group C1=CC=CC=C1C1=CC=C(C=2C=CC(=CC=2)C=2C=CC=CC=2)C=C1 GPRIERYVMZVKTC-UHFFFAOYSA-N 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 150000004986 phenylenediamines Chemical class 0.000 description 1
- PARWUHTVGZSQPD-UHFFFAOYSA-N phenylsilane Chemical compound [SiH3]C1=CC=CC=C1 PARWUHTVGZSQPD-UHFFFAOYSA-N 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 150000003058 platinum compounds Chemical class 0.000 description 1
- 229920001643 poly(ether ketone) Polymers 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 238000006068 polycondensation reaction Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920006290 polyethylene naphthalate film Polymers 0.000 description 1
- 239000011116 polymethylpentene Substances 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- UIDUKLCLJMXFEO-UHFFFAOYSA-N propylsilane Chemical compound CCC[SiH3] UIDUKLCLJMXFEO-UHFFFAOYSA-N 0.000 description 1
- CPNGPNLZQNNVQM-UHFFFAOYSA-N pteridine Chemical compound N1=CN=CC2=NC=CN=C21 CPNGPNLZQNNVQM-UHFFFAOYSA-N 0.000 description 1
- 235000019423 pullulan Nutrition 0.000 description 1
- JEXVQSWXXUJEMA-UHFFFAOYSA-N pyrazol-3-one Chemical class O=C1C=CN=N1 JEXVQSWXXUJEMA-UHFFFAOYSA-N 0.000 description 1
- 150000003219 pyrazolines Chemical class 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- WVIICGIFSIBFOG-UHFFFAOYSA-N pyrylium Chemical compound C1=CC=[O+]C=C1 WVIICGIFSIBFOG-UHFFFAOYSA-N 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical class C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- DLJHXMRDIWMMGO-UHFFFAOYSA-N quinolin-8-ol;zinc Chemical compound [Zn].C1=CN=C2C(O)=CC=CC2=C1.C1=CN=C2C(O)=CC=CC2=C1 DLJHXMRDIWMMGO-UHFFFAOYSA-N 0.000 description 1
- 150000003252 quinoxalines Chemical class 0.000 description 1
- 125000001567 quinoxalinyl group Chemical group N1=C(C=NC2=CC=CC=C12)* 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000001022 rhodamine dye Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- YRGLXIVYESZPLQ-UHFFFAOYSA-I tantalum pentafluoride Chemical compound F[Ta](F)(F)(F)F YRGLXIVYESZPLQ-UHFFFAOYSA-I 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 150000004867 thiadiazoles Chemical class 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- IBBLKSWSCDAPIF-UHFFFAOYSA-N thiopyran Chemical compound S1C=CC=C=C1 IBBLKSWSCDAPIF-UHFFFAOYSA-N 0.000 description 1
- ILJSQTXMGCGYMG-UHFFFAOYSA-N triacetic acid Chemical compound CC(=O)CC(=O)CC(O)=O ILJSQTXMGCGYMG-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- 125000006617 triphenylamine group Chemical group 0.000 description 1
- 125000004417 unsaturated alkyl group Chemical group 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 239000010457 zeolite Substances 0.000 description 1
- UHVMMEOXYDMDKI-JKYCWFKZSA-L zinc;1-(5-cyanopyridin-2-yl)-3-[(1s,2s)-2-(6-fluoro-2-hydroxy-3-propanoylphenyl)cyclopropyl]urea;diacetate Chemical compound [Zn+2].CC([O-])=O.CC([O-])=O.CCC(=O)C1=CC=C(F)C([C@H]2[C@H](C2)NC(=O)NC=2N=CC(=CC=2)C#N)=C1O UHVMMEOXYDMDKI-JKYCWFKZSA-L 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/341—Short-circuit prevention
Definitions
- the present invention relates to an organic electroluminescence element. Moreover, it is related with the illuminating device with which the said organic electroluminescent element was comprised. More specifically, the present invention relates to an organic electroluminescence element and a lighting device with improved light extraction efficiency.
- a film substrate such as a transparent plastic has a problem that gas barrier properties are inferior to a glass substrate. It has been found that when a substrate with poor gas barrier properties is used, water vapor or oxygen penetrates and, for example, the function in the electronic device is deteriorated.
- a film having a gas barrier property is formed on a film substrate and used as a gas barrier film.
- a gas barrier film used for a packaging material for an object that requires gas barrier properties and a liquid crystal display element one in which silicon oxide is vapor-deposited on a film substrate and one in which aluminum oxide is vapor-deposited are known.
- a light extraction structure in which a light scattering layer is provided is effective for improving luminous efficiency in a lighting device or a display device including an organic electroluminescence element (see, for example, Patent Document 1). .
- the present invention has been made in view of the above-described problems and situations, and the problem to be solved is that the gas barrier layer in contact with the light emitting unit or the light scattering layer or the like is in a high-temperature and high-humidity atmosphere caused by the uneven state of the surface.
- An organic electroluminescence element that suppresses deterioration of storage stability and occurrence of a short circuit and improves luminous efficiency and an illumination device including the organic electroluminescence element.
- the present inventor has studied the cause of the above-mentioned problems and the like. As a result, a light-emitting unit having at least a gas barrier layer, a smooth layer, and an organic functional layer sandwiched between a pair of electrodes on a film substrate.
- the present invention has found that the problems of the present invention can be solved when the gas barrier layers are laminated in this order, and the gas barrier layer is composed of at least two kinds of gas barrier layers having different composition or distribution of constituent elements. It came.
- a light emitting unit having at least a gas barrier layer, a smooth layer and an organic functional layer sandwiched between a pair of electrodes on a film substrate is an organic electroluminescence element laminated in this order, and the gas barrier layer is An organic electroluminescence device comprising at least two gas barrier layers having different composition or distribution of constituent elements.
- the organic electroluminescence device according to claim 1, wherein the smoothing layer has an arithmetic average roughness Ra of the surface on the light emitting unit side in the range of 0.5 to 50 nm.
- the average refractive index of the smooth layer is 1.65 or more at the shortest light emission maximum wavelength among the light emission maximum wavelengths of the light emitted from the light emitting unit.
- the average refractive index of the light scattering layer is 1.6 or more at the shortest light emission maximum wavelength among the light emission maximum wavelengths of the light emitted from the light emitting unit.
- the organic electroluminescent element as described in any one.
- the light scattering layer includes a binder having a refractive index of 1.6 or less and inorganic particles having a refractive index of 1.8 or more at the shortest emission maximum wavelength among the emission maximum wavelengths of the emitted light from the light emitting unit.
- the organic electroluminescence device according to any one of items 3 to 6, which is contained.
- one of the at least two gas barrier layers contains silicon dioxide which is a reaction product of an inorganic silicon compound.
- any one of the at least two kinds of gas barrier layers wherein any one of the gas barrier layers contains a reaction product of an organosilicon compound.
- An organic electroluminescence device according to any one of items 1 to 9 is provided.
- a gas barrier layer having a high gas barrier property against water vapor and oxygen is essential, but the surface irregularities formed by providing the gas barrier layer cause defects such as a short circuit. Therefore, it has been found that providing a smooth layer with a controlled surface roughness is effective in suppressing defects such as short-circuits and improving luminous efficiency.
- Sectional drawing which shows schematic structure of an organic electroluminescent element Schematic showing an example of gas barrier film manufacturing equipment Schematic diagram of gas supply port position setting
- the graph which shows each element profile of the thickness direction of the layer by the composition analysis of the depth direction using XPS of the gas barrier layer which concerns on this invention
- the graph which shows each element profile of the thickness direction of the layer by the composition analysis of the depth direction using XPS of the gas barrier layer which concerns on this invention
- Sectional drawing which shows schematic structure of the light emission panel produced in the Example.
- the organic electroluminescence device of the present invention is an organic electroluminescence device in which a light emitting unit having at least a gas barrier layer, a smooth layer and an organic functional layer sandwiched between a pair of electrodes is laminated in this order on a film substrate.
- the said gas barrier layer is comprised by the at least 2 sort (s) of gas barrier layer from which the composition or distribution state of a structural element differs, It is characterized by the above-mentioned.
- the arithmetic mean roughness Ra of the surface of the smoothing layer on the light emitting unit side is preferably in the range of 0.5 to 50 nm in that the effects of the present invention can be further expressed. .
- the electric field concentration due to the unevenness on the light emitting unit formed on the upper portion of the smooth layer thereby preventing an increase in leakage current and a short circuit failure.
- by flattening each film of the light emitting unit it is possible to reduce the unevenness of the electrodes, and it is possible to prevent the efficiency from being reduced due to surface plasmon absorption.
- the present invention it is preferable to have a light scattering layer between the gas barrier layer and the smooth layer. Thereby, the emitted light emitted in the light emitting unit can be taken out efficiently.
- the average refractive index of the smooth layer is preferably 1.65 or more at the shortest light emission maximum wavelength among the light emission maximum wavelengths of the light emitted from the light emitting units.
- the smooth layer preferably contains titanium dioxide.
- titanium dioxide having a high refractive index the average refractive index of the entire smoothing layer can be increased. Moreover, it is easy to adjust to a desired refractive index by adjusting the content of titanium dioxide.
- the average refractive index of the light scattering layer is preferably 1.6 or more at the shortest light emission maximum wavelength of the light emission maximum wavelengths of the light emitted from the light emitting unit.
- the average refractive index of the smooth layer and the average refractive index of the light scattering layer can be increased to the same extent, and light emitted from the light emitting unit through the smooth layer can be guided into the smooth layer with a minimum loss. Is possible.
- the light scattering layer includes a binder having a refractive index of 1.6 or less at a shortest emission maximum wavelength among emission maximum wavelengths of emitted light from the light emitting unit, and 1.8 or more. It is preferable to contain inorganic particles having a refractive index. Thereby, it becomes easy to satisfy the conditions of the refractive index difference and the average refractive index.
- one of the at least two gas barrier layers contains silicon dioxide which is a reaction product of an inorganic silicon compound.
- any one of the at least two gas barrier layers contains a reaction product of an organosilicon compound.
- a reaction product of an organosilicon compound it is possible to effectively prevent moisture from entering, leading to a long life of the light emitting device.
- it has the effect of filling in the defective portion of the inorganic gas barrier layer, and it leads to more effective life improvement in combination.
- ⁇ is used to mean that the numerical values described before and after it are included as a lower limit value and an upper limit value.
- the organic electroluminescence device of the present invention includes a light emitting unit having at least an organic functional layer sandwiched between a gas barrier layer, a smooth layer and a pair of electrodes on a film substrate.
- the gas barrier layer is composed of at least two types of gas barrier layers having different constituent elements in composition or distribution.
- the “light-emitting unit” refers to a light-emitting body (unit) composed mainly of an organic functional layer such as a light-emitting layer, a hole transport layer, and an electron transport layer containing at least various organic compounds described later. .
- the luminous body is sandwiched between a pair of electrodes consisting of an anode and a cathode, and light is emitted by recombination of holes (holes) supplied from the anode and electrons supplied from the cathode in the luminous body.
- the organic electroluminescent element of this invention may be provided with two or more of the said light emission units according to desired luminescent color.
- the organic EL element 100 according to the present invention is provided on a film substrate 4, and in order from the film substrate 4 side, a gas barrier layer 5, a light scattering layer 7, and a smooth layer. 1.
- the organic EL element 100 is configured to extract generated light (emitted light h) from at least the film substrate 4 side.
- the layer structure of the organic EL element 100 is not limited and may be a general layer structure.
- the transparent electrode 2 functions as an anode (that is, an anode)
- the counter electrode 6 functions as a cathode (that is, a cathode).
- the light emitting unit 3 has a configuration in which a hole injection layer 3a / a hole transport layer 3b / a light emission layer 3c / an electron transport layer 3d / an electron injection layer 3e are stacked in this order from the transparent electrode 2 side which is an anode.
- the hole injection layer 3a and the hole transport layer 3b may be provided as a hole transport injection layer.
- the electron transport layer 3d and the electron injection layer 3e may be provided as an electron transport injection layer.
- the electron injection layer 3e may be made of an inorganic material.
- the light-emitting unit 3 may have a hole blocking layer, an electron blocking layer, and the like laminated at necessary places as necessary.
- the light emitting layer 3c may have a structure in which each color light emitting layer that generates emitted light in each wavelength region is laminated, and each of these color light emitting layers is laminated via a non-light emitting intermediate layer.
- the intermediate layer may function as a hole blocking layer and an electron blocking layer.
- the counter electrode 6 as a cathode may also have a laminated structure as necessary. In such a configuration, only the portion where the light emitting unit 3 is sandwiched between the transparent electrode 2 and the counter electrode 6 becomes a light emitting region in the organic EL element 100.
- the auxiliary electrode 15 may be provided in contact with the electrode layer 2 b of the transparent electrode 2 for the purpose of reducing the resistance of the transparent electrode 2.
- the organic EL element 100 having the above configuration is sealed on the film substrate 4 with a sealing material 17 described later for the purpose of preventing deterioration of the light emitting unit 3 configured using an organic material or the like. Yes.
- the sealing material 17 is fixed to the film substrate 4 side with an adhesive 19.
- the terminal portions of the transparent electrode 2 (extraction electrode 16) and the counter electrode 6 are provided on the film substrate 4 in a state where they are exposed from the sealing material 17 while being insulated from each other by the light emitting unit 3. I will do it.
- the smooth layer 1 according to the present invention has a high temperature and high humidity caused by unevenness on the surface of the gas barrier layer 5 or the light scattering layer 7.
- the main purpose is to prevent adverse effects such as deterioration of storage stability and electrical short-circuit (short circuit) in an atmosphere.
- the smooth layer 1 according to the present invention has a flatness that allows the transparent electrode 2 to be satisfactorily formed thereon, and the surface property is such that the arithmetic average roughness Ra is within a range of 0.5 to 50 nm. Preferably there is.
- the arithmetic average roughness Ra is 30 nm or less, Especially preferably, it is 10 nm or less, Most preferably, it is 5 nm or less.
- the surface roughness (arithmetic mean roughness Ra) is an uneven cross section measured continuously with a detector having a stylus having a minimum tip radius using an AFM (Atomic Force Microscope: manufactured by Digital Instruments). It was calculated from the curve, and was measured three times in a section having a measurement direction of 30 ⁇ m with a stylus having a very small tip radius, and was determined from the average roughness regarding the amplitude of fine irregularities.
- the average refractive index nf of the smooth layer 1 is preferably a value close to the refractive index of the organic functional layer included in the light emitting unit 3. Specifically, since an organic material having a high refractive index is generally used for the light emitting unit 3, the smooth layer 1 has an average refraction at the shortest light emission maximum wavelength among the light emission maximum wavelengths of the light emitted from the light emission unit. It is preferable that the refractive index layer be a high refractive index layer having a refractive index nf of 1.5 or more, particularly greater than 1.65 and less than 2.5.
- the average refractive index nf is greater than 1.65 and less than 2.5, it may be formed of a single material or a mixture.
- the average refractive index nf of the smooth layer 1 uses a calculated refractive index calculated by a total value obtained by multiplying the refractive index specific to each material by the mixing ratio.
- the refractive index of each material may be 1.65 or less, or 2.5 or more, and the average refractive index nf of the mixed film is larger than 1.65 and less than 2.5. That's fine.
- the “average refractive index nf” is the refractive index of a single material when formed of a single material, and in the case of a mixed system, the refractive index specific to each material is multiplied by the mixing ratio. It is the calculated refractive index calculated by the combined value.
- the refractive index was measured by irradiating a light beam having the shortest light emission maximum wavelength among the light emission maximum wavelengths of the light emitted from the light emitting unit in an atmosphere at 25 ° C., and by using an Abbe refractometer (manufactured by ATAGO, DR-M2 ).
- known resins can be used without any particular limitation.
- hydrophilic resins can also be used.
- hydrophilic resin examples include water-soluble resins, water-dispersible resins, colloid-dispersed resins, and mixtures thereof.
- hydrophilic resin examples include acrylic resins, polyester resins, polyamide resins, polyurethane resins, fluorine resins, etc., for example, polyvinyl alcohol, gelatin, polyethylene oxide, polyvinyl pyrrolidone, casein, starch, agar, carrageenan, polyacrylic.
- Polymers such as acid, polymethacrylic acid, polyacrylamide, polymethacrylamide, polystyrene sulfonic acid, cellulose, hydroxyl ethyl cellulose, carboxyl methyl cellulose, hydroxyl ethyl cellulose, dextran, dextrin, pullulan, water-soluble polyvinyl butyral can be mentioned, but these Among these, polyvinyl alcohol is preferable.
- the polymer used as the binder resin one type may be used alone, or two or more types may be mixed and used as necessary.
- a resin curable mainly by ultraviolet rays / electron beams that is, a mixture of an ionizing radiation curable resin and a thermoplastic resin and a solvent, or a thermosetting resin
- a binder resin is preferably a polymer having a saturated hydrocarbon or polyether as a main chain, and more preferably a polymer having a saturated hydrocarbon as a main chain.
- the binder is preferably crosslinked.
- the polymer having a saturated hydrocarbon as the main chain is preferably obtained by a polymerization reaction of an ethylenically unsaturated monomer.
- the fine particle sol contained in the binder contained in the smooth layer 1 can also be suitably used.
- the lower limit of the particle diameter dispersed in the binder contained in the smooth layer 1 having a high refractive index is usually preferably 5 nm or more, more preferably 10 nm or more, and further preferably 15 nm or more. .
- distributed to a binder it is preferable that it is 70 nm or less, It is more preferable that it is 60 nm or less, It is further more preferable that it is 50 nm or less.
- the particle diameter dispersed in the binder is in the range of 5 to 60 nm, it is preferable in that high transparency can be obtained.
- the particle size distribution is not limited, and may be wide or narrow and may have a plurality of distributions.
- the particles contained in the smooth layer 1 according to the present invention are more preferably TiO 2 (titanium dioxide sol) from the viewpoint of stability.
- TiO 2 titanium dioxide sol
- rutile type is particularly preferable than anatase type, because the catalytic activity is low, and the weather resistance of the smooth layer 1 and the adjacent layer is high, and the refractive index is high.
- Examples of a method for preparing a titanium dioxide sol that can be used in the present invention include JP-A 63-17221, JP-A 7-819, JP-A 9-165218, and JP-A 11-43327. Can be referred to.
- the thickness of the smooth layer 1 needs to be somewhat thick in order to reduce the surface roughness of the light scattering layer, but it needs to be thin enough not to cause energy loss due to absorption. Specifically, it is preferably in the range of 0.1 to 5 ⁇ m, more preferably in the range of 0.5 to 2 ⁇ m.
- the organic EL element 100 of the present invention preferably includes the light scattering layer 7.
- the average refractive index ns of the light scattering layer is preferably such that the refractive index is as close as possible to the organic functional layer and the smooth layer 1 because the emitted light in the organic functional layer of the light emitting unit 3 enters through the smooth layer 1.
- the light scattering layer 7 has an average refractive index ns of 1.5 or more, particularly 1.6 or more and less than 2.5 at the shortest emission maximum wavelength among the emission maximum wavelengths of the emitted light from the light emitting unit 3.
- a high refractive index layer is preferred.
- the light scattering layer 7 may form a film with a single material having an average refractive index of ns 1.6 or more and less than 2.5, or may be mixed with two or more types of compounds to have an average refractive index ns 1.6 of. A film of less than 2.5 may be formed.
- the average refractive index ns of the light scattering layer 7 uses a calculated refractive index calculated by a total value obtained by multiplying the refractive index specific to each material by the mixing ratio.
- the refractive index of each material may be less than 1.6 or 2.5 or more as long as the average refractive index ns of the mixed film satisfies 1.6 or more and less than 2.5. Good.
- the “average refractive index ns” is the refractive index of a single material when formed of a single material, and in the case of a mixed system, the refractive index specific to each material is multiplied by the mixing ratio. It is the calculated refractive index calculated by the combined value.
- the light scattering layer 7 is preferably a light scattering film utilizing a difference in refractive index due to a mixture of a binder having a low refractive index which is a layer medium and particles having a high refractive index contained in the layer medium.
- the light scattering layer 7 is a layer for improving light extraction efficiency, and is preferably formed on the outermost surface of the gas barrier layer 5 on the film substrate 4 on the transparent electrode 2 side.
- the binder having a low refractive index has a refractive index nb of less than 1.9, particularly preferably less than 1.6.
- the “refractive index nb of the binder” is the refractive index of a single material when formed of a single material, and in the case of a mixed system, the mixing ratio is set to the refractive index specific to each material. It is a calculated refractive index calculated by the summed value.
- the particles having a high refractive index have a refractive index np of 1.5 or more, preferably 1.8 or more, and particularly preferably 2.0 or more.
- the “refractive index np of the particle” is the refractive index of a single material when formed of a single material, and in the case of a mixed system, the mixing ratio is set to the refractive index specific to each material. It is a calculated refractive index calculated by the summed value.
- the role of the particles having a high refractive index of the light scattering layer 7 includes a scattering function of guided light. For this purpose, it is necessary to improve the scattering property. In order to improve the scattering property, it is conceivable to increase the difference in refractive index between the particles having a high refractive index and the binder, increase the layer thickness, and increase the particle density. Among them, the one with the smallest trade-off with other performances is to increase the refractive index difference between the inorganic particles and the binder.
- between the resin material (binder) as the layer medium and the particles having a high refractive index contained is preferably 0.2 or more, and particularly preferably 0.3 or more. If the refractive index difference
- the average refractive index ns of the light scattering layer 7 is preferably a high refractive index layer in the range of 1.6 or more and less than 2.5, for example, the refractive index nb of the binder is 1 It is preferable that the refractive index np of particles having a high refractive index smaller than .6 is larger than 1.8.
- the refractive index is measured by irradiating the light having the shortest light emission maximum wavelength among the light emission maximum wavelengths of the light emitted from the light emitting unit in an atmosphere of 25 ° C. in the same manner as the smooth layer.
- DR-M2 manufactured by the company.
- the light scattering layer 7 is a layer that diffuses light by the difference in refractive index between the layer medium and the particles. Therefore, the contained particles are required to scatter the emitted light from the light emitting unit 3 without adversely affecting other layers.
- scattering is a state in which a haze value (ratio of scattering transmittance to total light transmittance) is 20% or more, more preferably 25% or more, and particularly preferably 30% or more in a light scattering layer single film. To express. If the haze value is 20% or more, the luminous efficiency can be improved.
- the haze value is a physical property value calculated under the influence of (a) the refractive index difference of the composition in the film and (b) the influence of the surface shape.
- the haze value excluding the influence of (b) is measured.
- it can be measured using a haze meter (NDH-5000, manufactured by Nippon Denshoku Industries Co., Ltd.).
- NDH-5000 manufactured by Nippon Denshoku Industries Co., Ltd.
- the particle diameter the scattering property can be improved, and defects such as a short circuit can be suppressed.
- it is preferably a transparent particle having a particle diameter equal to or larger than a region that causes Mie scattering in the visible light region.
- the average particle diameter is 0.2 micrometer or more.
- the layer thickness of the smooth layer 1 for flattening the roughness of the light-scattering layer 7 containing the particles needs to be increased.
- the thickness is preferably less than 10 ⁇ m, more preferably less than 5 ⁇ m, particularly preferably less than 3 ⁇ m, and most preferably less than 1 ⁇ m.
- the average particle diameter includes at least one particle having a size in the range of 100 nm to 3 ⁇ m and does not include particles having a particle size of 3 ⁇ m or more.
- the average particle diameter of the high refractive index particles can be measured by, for example, an apparatus using a dynamic light scattering method such as Nanotrack UPA-EX150 manufactured by Nikkiso Co., Ltd., or image processing of an electron micrograph.
- Such particles are not particularly limited and can be appropriately selected according to the purpose.
- the particles may be organic fine particles or inorganic fine particles, and among them, inorganic fine particles having a high refractive index. Is preferred.
- organic fine particles having a high refractive index examples include polymethyl methacrylate beads, acrylic-styrene copolymer beads, melamine beads, polycarbonate beads, styrene beads, cross-linked polystyrene beads, polyvinyl chloride beads, benzoguanamine-melamine formaldehyde beads, and the like. Can be mentioned.
- the inorganic fine particles having a high refractive index examples include inorganic oxide particles composed of at least one oxide selected from zirconium, titanium, aluminum, indium, zinc, tin, antimony, and the like.
- Specific examples of the inorganic oxide particles include ZrO 2 , TiO 2 , BaTiO 3 , Al 2 O 3 , In 2 O 3 , ZnO, SnO 2 , Sb 2 O 3 , ITO, SiO 2 , ZrSiO 4 , zeolite.
- TiO 2 , BaTiO 3 , ZrO 2 , ZnO and SnO 2 are preferable, and TiO 2 is most preferable.
- the rutile type is more preferable than the anatase type because the catalyst activity is low and the weather resistance of the high refractive index layer and the adjacent layer becomes high and the refractive index is high.
- these particles are used after being surface-treated from the viewpoint of improving dispersibility and stability in the case of using a dispersion liquid described later in order to be contained in the light scattering layer 7 having a high refractive index, or It is possible to select whether or not to use a surface treatment.
- specific materials for the surface treatment include different inorganic oxides such as silicon oxide and zirconium oxide, metal hydroxides such as aluminum hydroxide, organic acids such as organosiloxane and stearic acid, and the like. It is done. These surface treatment materials may be used individually by 1 type, and may be used in combination of multiple types. Among these, from the viewpoint of the stability of the dispersion, the surface treatment material is preferably a different inorganic oxide and / or metal hydroxide, more preferably a metal hydroxide.
- the coating amount (in general, this coating amount is indicated by the mass ratio of the surface treatment material used on the surface of the particle to the mass of the particles). Is preferably 0.01 to 99% by mass. By setting it within this range, the effect of improving the dispersibility and stability by the surface treatment can be sufficiently obtained, and the light extraction efficiency can be improved by the high refractive index of the light scattering layer 7.
- quantum dots described in International Publication No. 2009/014707 and US Pat. No. 6,608,439 can be suitably used.
- the arrangement of the particles having a high refractive index is preferably arranged with the thickness of one particle layer so that the particles are in contact with or close to the interface between the light scattering layer 7 and the smooth layer 1.
- the content of the high refractive index particles in the light scattering layer 7 is preferably in the range of 1.0 to 70%, more preferably in the range of 5 to 50% in terms of volume filling factor. Thereby, the density distribution of the refractive index can be made dense at the interface between the light scattering layer 7 and the smooth layer 1, and the light extraction amount can be increased to improve the light extraction efficiency.
- the particles are dispersed in a resin material (polymer) solution (a solvent in which particles are not dissolved) used as a medium. It is formed by coating on a film substrate. Although these particles are actually polydisperse particles and difficult to arrange regularly, they have a diffraction effect locally, but many of them change the direction of light by diffusion and light extraction efficiency To improve.
- the binder that can be used in the light scattering layer 7 is the same resin as that of the smooth layer 1.
- a compound capable of forming a metal oxide, a metal nitride, or a metal oxynitride by ultraviolet irradiation under a specific atmosphere is particularly preferably used.
- a compound suitable for the present invention a compound which can be modified at a relatively low temperature described in JP-A-8-112879 is preferable.
- polysiloxane having Si—O—Si bond including polysilsesquioxane
- polysilazane having Si—N—Si bond both Si—O—Si bond and Si—N—Si bond
- polysiloxazan containing can be used in combination of two or more.
- the thickness of the light scattering layer 7 needs to be thick to some extent in order to ensure the optical path length for causing scattering, but it needs to be thin enough not to cause energy loss due to absorption. Specifically, it is preferably in the range of 0.1 to 5 ⁇ m, more preferably in the range of 0.2 to 2 ⁇ m.
- the polysiloxane used in the light scattering layer 7 may include [R 3 SiO 1/2 ], [R 2 SiO], [RSiO 3/2 ] and [SiO 2 ] as general structural units.
- R is a hydrogen atom, an alkyl group containing 1 to 20 carbon atoms (for example, methyl, ethyl, propyl, etc.), an aryl group (for example, phenyl), or an unsaturated alkyl group (for example, vinyl).
- Examples of specific polysiloxane groups include [PhSiO 3/2 ], [MeSiO 3/2 ], [HSiO 3/2 ], [MePhSiO], [Ph 2 SiO], [PhViSiO], [ViSiO 3/2 (Vi represents a vinyl group), [MeHSiO], [MeViSiO], [Me 2 SiO], [Me 3 SiO 1/2 ] and the like. Mixtures and copolymers of polysiloxanes can also be used.
- Polysilsesquioxane In the light scattering layer 7, it is preferable to use polysilsesquioxane among the above-mentioned polysiloxanes.
- Polysilsesquioxane is a compound containing silsesquioxane in a structural unit.
- the “silsesquioxane” is a compound represented by [RSiO 3/2 ], and usually RSiX 3 (R is a hydrogen atom, an alkyl group, an alkenyl group, an aryl group, an aralkyl group (also called an aralkyl group).
- X is a halogen, an alkoxy group, etc.
- the molecular arrangement of polysilsesquioxane is typically an amorphous structure, a ladder structure, a cage structure, or a partially cleaved structure (a structure in which a silicon atom is missing from a cage structure or a cage structure).
- a structure in which the silicon-oxygen bond in the structure is partially broken is known.
- hydrogen silsesquioxane polymer examples include a hydridosiloxane polymer represented by HSi (OH) x (OR) y O z / 2 .
- Each R is an organic group or a substituted organic group, and forms a hydrolyzable substituent when bonded to silicon by an oxygen atom.
- x 0 to 2
- y 0 to 2
- z 1 to 3
- x + y + z 3.
- R examples include an alkyl group (for example, methyl, ethyl, propyl, butyl and the like), an aryl group (for example, phenyl and the like), and an alkenyl group (for example, allyl and vinyl and the like).
- These resins may be fully condensed (HSiO 3/2 ) n , or only partially hydrolyzed (ie, including some Si—OR) and / or partially condensed (ie, one Part of Si—OH).
- the polysilazane used in the light scattering layer 7 is a polymer having a silicon-nitrogen bond, and is composed of Si 2 , Si 3 N 4, and an intermediate solid solution SiO x N y composed of Si—N, Si—H, N—H, or the like.
- Inorganic precursor polymers such as (x: 0.1 to 1.9, y: 0.1 to 1.3).
- the polysilazane preferably used for the light scattering layer 7 is represented by the following general formula (A).
- the “polysilazane” according to the present invention is a polymer having a silicon-nitrogen bond in the structure and a precursor of silicon oxynitride, and those having the following general formula (A) structure are preferably used.
- R 1 , R 2 and R 3 each represent a hydrogen atom, an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, an alkylsilyl group, an alkylamino group or an alkoxy group.
- perhydropolysilazane in which all of R 1 , R 2, and R 3 are hydrogen atoms is particularly preferred from the viewpoint of the denseness of the resulting light scattering layer.
- Perhydropolysilazane is presumed to have a linear structure and a ring structure centered on 6-membered and 8-membered rings, and its molecular weight is about 600 to 2000 in terms of number average molecular weight (Mn) (gel Polystyrene conversion by permeation chromatography), which is a liquid or solid substance.
- Mn number average molecular weight
- Polysilazane is commercially available in the form of a solution dissolved in an organic solvent, and the commercially available product can be used as a polysilazane-containing coating solution as it is.
- Examples of commercially available polysilazane solutions include NN120-20, NAX120-20, and NL120-20 manufactured by AZ Electronic Materials.
- an ionizing radiation curable resin composition can be used as the binder.
- a curing method of the ionizing radiation curable resin composition a normal curing method of the ionizing radiation curable resin composition, that is, irradiation with an electron beam or ultraviolet rays. Can be cured.
- 10 to 1000 keV emitted from various electron beam accelerators such as Cockrowalton type, bandegraph type, resonant transformer type, insulated core transformer type, linear type, dynamitron type, and high frequency type.
- an electron beam having an energy of 30 to 300 keV is used, and in the case of ultraviolet curing, ultraviolet rays emitted from rays of ultra high pressure mercury lamp, high pressure mercury lamp, low pressure mercury lamp, carbon arc, xenon arc, metal halide lamp, etc. Available.
- a rare gas excimer lamp that emits vacuum ultraviolet rays within a range of 100 to 230 nm is specifically mentioned.
- a rare gas atom such as Xe, Kr, Ar, Ne, etc. is called an inert gas because it does not form a molecule by chemically bonding.
- rare gas atoms excited atoms
- excimer light of 172 nm is emitted when Xe 2 *, which is an excited excimer molecule, transitions to the ground state, as shown by the following reaction formula.
- ⁇ Excimer lamps are characterized by high efficiency because radiation concentrates on one wavelength and almost no other light is emitted. Moreover, since extra light is not radiated
- a dielectric barrier discharge lamp has a structure in which a discharge occurs between electrodes via a dielectric. Generally, at least one electrode is disposed between a dielectric discharge vessel and the outside thereof. That's fine.
- a dielectric barrier discharge lamp for example, a rare gas such as xenon is enclosed in a double cylindrical discharge vessel composed of a thick tube and a thin tube made of quartz glass, and a net-like second discharge vessel is formed outside the discharge vessel. There is one in which one electrode is provided and another electrode is provided inside the inner tube.
- a dielectric barrier discharge lamp generates a dielectric barrier discharge inside a discharge vessel by applying a high frequency voltage between electrodes, and generates excimer light when excimer molecules such as xenon generated by the discharge dissociate. .
- Excimer lamps can be lit with low power input because of their high light generation efficiency. In addition, since light having a long wavelength that causes a temperature rise is not emitted and energy is emitted at a single wavelength in the ultraviolet region, the temperature rise of the irradiation object due to the irradiation light itself is suppressed.
- the refractive index difference between the binder of the light scattering layer 7 and the smooth layer 1 is small.
- the refractive index difference between the binder of the light scattering layer 7 and the smooth layer 1 is preferably 0.1 or less.
- the layer thickness obtained by adding the light scattering layer 7 to the smooth layer 1 is preferably in the range of 100 nm to 5 ⁇ m, and more preferably in the range of 300 nm to 2 ⁇ m.
- the gas barrier layer according to the present invention is characterized by being composed of at least two kinds of gas barrier layers having different constituent elements or different distribution states. By adopting such a configuration, it is possible to efficiently prevent permeation of oxygen and water vapor.
- the gas barrier layer is a barrier having a water vapor permeability (25 ⁇ 0.5 ° C., relative humidity 90 ⁇ 2% RH) measured by a method according to JIS K 7129-1992 of 0.01 g / m 2 ⁇ 24 h or less. It is preferably a conductive film (also referred to as a barrier film or the like).
- the oxygen permeability measured by a method according to JIS K 7126-1987 is 1 ⁇ 10 ⁇ 3 ml / m 2 ⁇ 24 h ⁇ atm or less, and the water vapor permeability is 1 ⁇ 10 ⁇ 5 g / A high barrier film of m 2 ⁇ 24 h or less is preferable.
- one of the at least two gas barrier layers contains silicon dioxide which is a reaction product of an inorganic silicon compound.
- one of the at least two gas barrier layers contains a reaction product of an organosilicon compound. That is, it is preferable that at least one gas barrier layer contains an element derived from an organosilicon compound, for example, oxygen, silicon, carbon, or the like as a constituent element.
- the composition or distribution state of the elements constituting the gas barrier layer in the gas barrier layer may be uniform or different in the thickness direction. As a method for making the composition or distribution state of the constituent elements different, it is preferable to make the gas barrier layer forming method and the forming material different as described later.
- gas barrier layer Of the at least two types of gas barrier layers constituting the gas barrier layer, one type is the first gas barrier layer and the other type is the second gas. This will be referred to as a barrier layer.
- the constituent element of the first gas barrier layer according to the present invention includes at least an element constituting a compound that prevents permeation of oxygen and water vapor, and may be different from the constituent elements of the second gas barrier layer described later.
- the first gas barrier layer 5a can be provided as a layer containing silicon, oxygen and carbon as constituent elements on one surface of the film substrate.
- the distribution curve of each constituent element based on the element distribution measurement in the depth direction by X-ray photoelectron spectroscopy for the first gas barrier layer 5a satisfies all the following requirements (i) to (iv). Is preferable from the viewpoint of improving gas barrier properties.
- the silicon atom ratio, oxygen atom ratio, and carbon atom ratio have the following order of magnitude relationship in a distance region of 90% or more in the layer thickness direction from the surface of the first gas barrier layer 5a.
- Carbon atom ratio ⁇ (silicon atom ratio) ⁇ (oxygen atom ratio)
- the carbon distribution curve has at least two extreme values.
- the absolute value of the difference between the maximum value and the minimum value of the carbon atom ratio in the carbon distribution curve is 5 at% or more.
- the maximum value of the oxygen distribution curve closest to the surface of the first gas barrier layer 5a on the film substrate side is the maximum among the maximum values of the oxygen distribution curve in the gas barrier layer 5. .
- the first gas barrier layer 5a uses a belt-like flexible film substrate to convey the film substrate while being in contact between a pair of film forming rollers, and between the pair of film forming rollers.
- the thin film layer is preferably formed on the film substrate by a plasma chemical vapor deposition method in which plasma discharge is performed while supplying a film forming gas.
- the extreme value means the maximum value or the minimum value of the atomic ratio of each element with respect to the distance from the surface of the first gas barrier layer 5a in the layer thickness direction of the first gas barrier layer 5a. .
- the maximum value is a point where the value of the atomic ratio of the element changes from increasing to decreasing when the distance from the surface of the first gas barrier layer 5a is changed, and the atomic ratio of the element at that point.
- the atomic ratio value of the element at a position where the distance from the surface of the first gas barrier layer 5a in the layer thickness direction of the first gas barrier layer 5a is further changed by 20 nm from that point is reduced by 3 at% or more. It means a point.
- the minimum value is a point where the value of the atomic ratio of the element changes from decreasing to increasing when the distance from the surface of the first gas barrier layer 5a is changed, and the atomic atom of the element at that point.
- the atomic ratio value of the element at a position where the distance from the surface of the first gas barrier layer 5a in the layer thickness direction of the first gas barrier layer 5a is further changed by 20 nm from the point is increased by 3 at% or more than the ratio value. The point to do.
- the carbon atom ratio in the first gas barrier layer 5a according to the present invention is preferably in the range of 8 to 20 at% as an average value of the entire layer from the viewpoint of flexibility. More preferably, it is within the range of 10 to 20 at%. By setting it within this range, it is possible to form the first gas barrier layer 5a that sufficiently satisfies the gas barrier property and the flexibility.
- the absolute value of the difference between the maximum value and the minimum value of the carbon atom ratio in the carbon distribution curve is 5 at% or more.
- the absolute value of the difference between the maximum value and the minimum value of the carbon atom ratio is more preferably 6 at% or more, and particularly preferably 7 at% or more.
- the oxygen distribution curve of the first gas barrier layer 5a is closest to the surface of the first gas barrier layer 5a on the film substrate side. It is preferable that the maximum value of the oxygen distribution curve takes the maximum value among the maximum values of the oxygen distribution curve in the first gas barrier layer 5a.
- FIG. 4 is a graph showing each element profile in the thickness direction of the layer according to the XPS depth profile (distribution in the depth direction) of the first gas barrier layer 5a according to the present invention.
- FIG. 4 shows the oxygen distribution curve as A, the silicon distribution curve as B, and the carbon distribution curve as C.
- the atomic ratio of each element continuously changes between the surface of the first gas barrier layer 5a (distance 0 nm) and the surface of the film substrate 4 (distance about 300 nm), but the first gas barrier of the oxygen distribution curve A
- the maximum value of the oxygen atom ratio closest to the surface of the layer 5a is X
- the maximum value of the oxygen atom ratio closest to the surface of the film substrate 4 is Y
- the value of the oxygen atom ratio is Y> X. This is preferable from the viewpoint of preventing intrusion of water molecules from the substrate 4 side.
- the oxygen atomic ratio Y that is the maximum value of the oxygen distribution curve closest to the surface of the first gas barrier layer 5a on the film substrate 4 side is sandwiched between the film substrate 4 and the gas barrier layer. It is preferably 1.05 times or more of the oxygen atomic ratio X, which is the maximum value of the oxygen distribution curve closest to the opposite gas barrier layer surface. That is, it is preferable that 1.05 ⁇ Y / X.
- the upper limit is not particularly limited, but is preferably in the range of 1.05 ⁇ Y / X ⁇ 1.30, and more preferably in the range of 1.05 ⁇ Y / X ⁇ 1.20. preferable. Within this range, intrusion of water molecules can be prevented, the gas barrier property is not deteriorated under high temperature and high humidity, and this is preferable from the viewpoint of productivity and cost.
- the absolute value of the difference between the maximum value and the minimum value of the oxygen atom ratio is preferably 5 at% or more, more preferably 6 at% or more, and 7 at % Or more is particularly preferable.
- the absolute value of the difference between the maximum value and the minimum value of the silicon atom ratio in the silicon distribution curve of the first gas barrier layer 5a is preferably less than 5 at%, more preferably less than 4 at%. Preferably, it is particularly preferably less than 3 at%. When the absolute value is within the above range, the gas barrier property of the obtained first gas barrier layer 5a and the mechanical strength of the gas barrier layer are sufficient.
- ⁇ Depth composition analysis of gas barrier layer by XPS> The carbon distribution curve, oxygen distribution curve and silicon distribution curve in the layer thickness (depth) direction of the gas barrier layer 5 are measured by X-ray photoelectron spectroscopy (XPS) measurement and rare gas ion sputtering such as argon.
- XPS X-ray photoelectron spectroscopy
- rare gas ion sputtering such as argon.
- XPS depth profile distributed in the depth direction
- a distribution curve obtained by such XPS depth profile measurement can be created, for example, with the vertical axis as the atomic ratio (unit: at%) of each element and the horizontal axis as the etching time (sputtering time).
- the etching time generally correlates with the distance from the surface of the gas barrier layer 5 in the layer thickness direction of the gas barrier layer 5 in the layer thickness direction. Therefore, as the “distance from the surface of the gas barrier layer in the thickness direction of the gas barrier layer”, the surface of the gas barrier layer 5 calculated from the relationship between the etching rate and the etching time employed in the XPS depth profile measurement. The distance from can be adopted.
- etching rate is 0.05 nm / It is preferable to use sec (SiO 2 thermal oxide film equivalent value).
- the surface direction of the first gas barrier layer 5a (from the viewpoint of forming the gas barrier layer 5 having a uniform and excellent gas barrier property over the entire surface of the first gas barrier layer 5a) It is preferably substantially uniform (in a direction parallel to the surface of the gas barrier layer 5).
- that the gas barrier layer 5 is substantially uniform in the surface direction means that the oxygen distribution curve and the carbon distribution curve at any two measurement points on the surface of the gas barrier layer 5 by XPS depth profile measurement.
- the number of extreme values of the carbon distribution curve obtained at any two measurement points is the same, and the difference between the maximum value and the minimum value of the atomic ratio of carbon in each carbon distribution curve
- the absolute values are the same as each other or within 5 at%.
- the gas barrier film according to the present invention preferably includes at least one gas barrier layer 5 that satisfies all of the above conditions (i) to (iv), but may include two or more layers that satisfy such conditions. Good. Further, when two or more such gas barrier layers 5 are provided, the materials of the plurality of gas barrier layers 5 may be the same or different. Further, when two or more such gas barrier layers 5 are provided, such a gas barrier layer 5 may be formed on one surface of the film substrate 4. It may be formed on the surface.
- the silicon atom ratio in the gas barrier layer 5 is preferably in the range of 25 to 45 at%, more preferably in the range of 30 to 40 at%.
- the oxygen atom ratio in the first gas barrier layer 5a is preferably in the range of 33 to 67 at%, and more preferably in the range of 45 to 67 at%.
- the carbon atom ratio in the first gas barrier layer 5a is preferably in the range of 3 to 33 at%, and more preferably in the range of 3 to 25 at%.
- the thickness of the first gas barrier layer 5a is preferably in the range of 5 to 3000 nm, more preferably in the range of 10 to 2000 nm, still more preferably in the range of 100 to 1000 nm, and 300 to 1000 nm. A range is particularly preferred.
- the gas barrier properties such as oxygen gas barrier properties and water vapor barrier properties are excellent, and the gas barrier properties are not deteriorated by bending.
- the first gas barrier layer 5a is preferably a layer formed by plasma enhanced chemical vapor deposition. More specifically, as the first gas barrier layer formed by such a plasma chemical vapor deposition method, the film substrate 4 is conveyed while being in contact with the pair of film forming rollers, and is formed between the pair of film forming rollers. A layer formed by plasma chemical vapor deposition by plasma discharge while supplying a film gas is preferable. Further, when discharging between the pair of film forming rollers in this way, it is preferable to reverse the polarities of the pair of film forming rollers alternately.
- the film forming gas used in such a plasma chemical vapor deposition method preferably contains an organosilicon compound and oxygen, and the content of oxygen in the supplied film forming gas is the same as that in the film forming gas. It is preferable that the amount is less than or equal to the theoretical oxygen amount required for complete oxidation of the total amount of the organosilicon compound.
- the first gas barrier layer 5a is preferably a layer formed on the film substrate 4 by a continuous film forming process.
- the first gas barrier layer according to the present invention preferably employs a plasma chemical vapor deposition method (plasma CVD method) from the viewpoint of gas barrier properties, and the plasma chemical vapor deposition method employs a Penning discharge plasma type plasma. Chemical vapor deposition may also be used.
- plasma CVD method plasma chemical vapor deposition method
- Chemical vapor deposition may also be used.
- plasma is generated in the plasma chemical vapor deposition method.
- a pair of film forming rollers is used, and the film substrate 4 is brought into contact with each of the pair of film forming rollers. It is preferable that the plasma is generated while being conveyed and discharged between the pair of film forming rollers.
- the film formation rate can be doubled and a film having the same structure can be formed, so that the extreme value in the carbon distribution curve can be at least doubled, and the film can be efficiently produced. It is possible to form a layer that satisfies all the conditions (i) to (iv) according to the invention.
- the gas barrier film according to the present invention preferably has the gas barrier layer 5 formed on the surface of the film substrate 4 by a roll-to-roll method from the viewpoint of productivity.
- An apparatus that can be used when producing a gas barrier film by such a plasma chemical vapor deposition method is not particularly limited, and includes at least a pair of film forming rollers and a plasma power source, and It is preferable that the apparatus has a configuration capable of discharging between a pair of film forming rollers.
- the plasma chemical vapor deposition method is used. It is also possible to manufacture in a roll-to-roll system.
- FIG. 2 is a schematic diagram showing an example of a manufacturing apparatus that can be suitably used for forming the first gas barrier layer according to the present invention on a film substrate.
- the manufacturing apparatus shown in FIG. 2 includes a delivery roller 11, transport rollers 21, 22, 23 and 24, film formation rollers 31 and 32, a gas supply port 41, a plasma generation power source 51, a film formation roller 31 and 32 includes magnetic field generators 61 and 62 installed inside 32, and a winding roller 71.
- a manufacturing apparatus at least the film forming rollers 31, 32, the gas supply port 41, the plasma generation power source 51, and the magnetic field generators 61 and 62 made of permanent magnets are not shown. Are arranged in.
- the vacuum chamber is connected to a vacuum pump (not shown), and the pressure in the vacuum chamber can be appropriately adjusted by the vacuum pump.
- each film-forming roller has a power source for plasma generation so that the pair of film-forming rollers (the film-forming roller 31 and the film-forming roller 32) can function as a pair of counter electrodes. 51 is connected. Therefore, in such a manufacturing apparatus, it is possible to discharge into the space between the film forming roller 31 and the film forming roller 32 by supplying electric power from the plasma generating power source 51, thereby forming the film. Plasma can be generated in the space between the roller 31 and the film forming roller 32.
- the material and design may be appropriately changed so that the film-forming roller 31 and the film-forming roller 32 can also be used as electrodes.
- a pair of film-forming roller film-forming rollers 31 and 32
- position a pair of film-forming roller film-forming rollers 31 and 32
- the film forming rate can be doubled, and a film having the same structure can be formed. Can be at least doubled.
- magnetic field generators 61 and 62 fixed so as not to rotate even when the film forming roller rotates are provided, respectively.
- the film formation roller 31 and the film formation roller 32 known rollers can be used as appropriate.
- the diameters of the film forming rollers 31 and 32 are preferably in the range of 300 to 1000 mm ⁇ , particularly in the range of 300 to 700 mm ⁇ , from the viewpoint of discharge conditions, chamber space, and the like. If it is 300 mm ⁇ or more, the plasma discharge space will not become small, so there will be no deterioration in productivity, and it will be possible to avoid applying the total amount of heat of the plasma discharge to the film in a short time, thus reducing damage to the film substrate 4. preferable.
- the diameter is 1000 mm ⁇ or less because practicality can be maintained in terms of device design including uniformity of plasma discharge space.
- the winding roller 71 is not particularly limited as long as it can wind the film substrate 4 on which the gas barrier layer 5 is formed, and a known roller can be used as appropriate.
- a gas supply port 41 a gas supply port that can supply or discharge a raw material gas or the like at a predetermined speed can be used as appropriate.
- the plasma generating power source 51 a known power source for a plasma generating apparatus can be used as appropriate.
- Such a power source 51 for generating plasma supplies power to the film forming roller 31 and the film forming roller 32 connected thereto, and makes it possible to use these as counter electrodes for discharge.
- As such a plasma generation power source 51 it is possible to more efficiently carry out the plasma CVD method, so that the polarity of the pair of film forming rollers can be alternately reversed (AC power source or the like) ) Is preferably used.
- the applied power can be in the range of 100 W to 10 kW, and the AC frequency is 50 Hz. More preferably, it can be in the range of -500 kHz.
- the magnetic field generators 61 and 62 known magnetic field generators can be used as appropriate.
- the type of source gas, the power of the electrode drum of the plasma generator, the pressure in the vacuum chamber, the diameter of the film forming roller, and the conveyance speed of the film substrate 4 are set.
- the gas barrier film according to the present invention can be produced. That is, using the manufacturing apparatus shown in FIG. 2, a plasma discharge is generated between a pair of film forming rollers (film forming rollers 31 and 32) while supplying a film forming gas (such as a raw material gas) into the vacuum chamber.
- the film-forming gas (raw material gas or the like) is decomposed by plasma, and the gas barrier layer 5 is formed on the surface of the film substrate 4 on the film-forming roller 31 and on the surface of the film substrate 4 on the film-forming roller 32. It is formed by the plasma CVD method.
- the film substrate 4 is transported by the delivery roller 11 and the film formation roller 31, respectively, so that the film substrate 4 is formed on the surface of the film substrate 4 by a roll-to-roll continuous film formation process. Then, the first gas barrier layer 5a is formed.
- the maximum value of the oxygen distribution curve closest to the surface of the gas barrier layer 5 on the film substrate 4 side is the oxygen distribution curve in the first gas barrier layer 5a. It is preferable to take the maximum value among the local maximum values.
- the oxygen atomic ratio according to the present invention the oxygen atomic ratio that is the maximum value of the oxygen distribution curve closest to the surface of the first gas barrier layer 5a on the side of the film substrate 4 is different from the film substrate 4 in the gas barrier layer 5.
- the oxygen atom ratio is 1.05 times or more of the maximum value of the oxygen distribution curve closest to the surface of the gas barrier layer 5 on the opposite side.
- the method for forming the oxygen atomic ratio so as to have a desired distribution in the first gas barrier layer 5a is not particularly limited, and a method for changing the film-forming gas concentration during film formation, gas A method of changing the position of the supply port, a method of supplying gas at a plurality of locations, a method of controlling a gas flow by installing a baffle plate near the gas supply port, and a plurality of plasma CVD by changing the film forming gas concentration
- a method of performing plasma CVD while bringing the position of the gas supply port 41 close to either between the film forming rollers 31 or 32 is simple and favorable in terms of reproducibility.
- FIG. 3 is a schematic diagram illustrating the movement of the position of the gas supply port of the CVD apparatus.
- the film formation roller 31 is formed on the gas supply port 41 from the vertical bisector m connecting the film formation rollers 31 and 32.
- it can be controlled so as to satisfy the extreme value condition of the oxygen distribution curve by moving closer to the 32 side within a range of 5 to 20%. That is, the distance between (t 1 -p) or (t 2 -p) in the direction of t 1 or t 2 from the point p on the vertical bisector m connecting the film forming rollers 31 and 32 ) Is 100%, the distance between the positions of the points p is within the range of 5 to 20%, and the film forming roller side is moved in a translational manner.
- the extreme value of the oxygen distribution curve can be controlled by the distance traveled through the gas supply port 41.
- the gas supply port 41 is brought closer to the film forming roller 31 or 32 with a moving distance close to 20%. Formation is possible.
- the range of movement of the gas supply port is preferably close to within the range of 5 to 20%, more preferably within the range of 5 to 15%.
- the limit distribution curve is less likely to vary, and a desired distribution can be formed uniformly and with good reproducibility.
- FIG. 4 shows an example of each element profile in the layer thickness direction based on the XPS depth profile in which the first gas barrier layer 5a according to the present invention is formed with the gas supply port 41 close to 5% in the direction of the film forming roller 31. .
- FIG. 5 shows an example of each element profile in the layer thickness direction based on the XPS depth profile formed by bringing the gas supply port 41 closer to the film forming roller 32 direction by 10%.
- FIG. 6 is an example of each element profile in the layer thickness direction by the XPS depth profile of the gas barrier layer as a comparison.
- the gas barrier layer is formed by installing the gas supply port 41 on the vertical bisector m connecting the film forming rollers 31 and 32 to form a gas barrier layer.
- the oxygen atom ratio at which the maximum value X of the oxygen distribution curve closest to the surface becomes the maximum value Y of the oxygen distribution curve closest to the gas barrier layer surface on the opposite side across the gas barrier layer from the film substrate It can be seen that the extreme value of the oxygen distribution curve on the surface of the gas barrier layer closest to the film substrate side does not become the maximum value in the layer.
- the source gas in the film forming gas used for forming the first gas barrier layer 5a according to the present invention can be appropriately selected and used according to the material of the gas barrier layer 5 to be formed.
- a source gas for example, an organosilicon compound containing silicon is preferably used.
- organosilicon compounds include hexamethyldisiloxane, 1,1,3,3-tetramethyldisiloxane, vinyltrimethylsilane, methyltrimethylsilane, hexamethyldisilane, methylsilane, dimethylsilane, trimethylsilane, diethyl
- organosilicon compounds include silane, propylsilane, phenylsilane, vinyltriethoxysilane, vinyltrimethoxysilane, tetramethoxysilane, tetraethoxysilane, phenyltrimethoxysilane, methyltriethoxysilane, and octamethylcyclotetrasiloxane.
- organosilicon compounds hexamethyldisiloxane and 1,1,3,3-tetramethyldisiloxane are preferable from the viewpoints of handling in film formation and characteristics such as gas barrier properties of the obtained gas barrier layer 5. .
- these organosilicon compounds can be used individually by 1 type or in combination of 2 or more types.
- a reactive gas may be used as the film forming gas.
- a gas that reacts with the raw material gas to become an inorganic compound such as an oxide or a nitride can be appropriately selected and used.
- a reaction gas for forming an oxide for example, oxygen or ozone can be used.
- a reactive gas for forming nitride nitrogen and ammonia can be used, for example. These reaction gases can be used singly or in combination of two or more. For example, when forming an oxynitride, the reaction gas for forming an oxide and a nitride are formed. Can be used in combination with the reaction gas for
- a carrier gas may be used as necessary in order to supply the source gas into the vacuum chamber.
- a discharge gas may be used as necessary in order to generate plasma discharge.
- a carrier gas and a discharge gas known ones can be used as appropriate, and for example, rare gas elements such as helium, argon, neon, and xenon can be used.
- the ratio of the source gas and the reactive gas is the amount of the reactive gas that is theoretically necessary to completely react the source gas and the reactive gas. It is preferable not to make the ratio of the reaction gas excessively higher than the ratio. If the ratio of the reaction gas is excessive, it is difficult to obtain the gas barrier layer 5 according to the present invention. Therefore, in order to obtain the desired performance as a barrier film, when the film forming gas contains the organosilicon compound and oxygen, the entire amount of the organosilicon compound in the film forming gas is completely oxidized. It is preferable that the amount of oxygen be less than or equal to the theoretical oxygen amount necessary for this.
- hexamethyldisiloxane organosilicon compound: HMDSO, (CH 3 ) 6 Si 2 O) as a source gas and oxygen (O 2 ) as a reaction gas
- HMDSO hexamethyldisiloxane
- O 2 oxygen
- a film-forming gas containing hexamethyldisiloxane (HMDSO, (CH 3 ) 6 Si 2 O) as a source gas and oxygen (O 2 ) as a reaction gas is reacted by a plasma CVD method to form a silicon-oxygen system.
- HMDSO, (CH 3 ) 6 Si 2 O) a source gas
- oxygen (O 2 ) as a reaction gas
- the reaction represented by the following reaction formula (1) occurs by the film forming gas, and silicon dioxide is produced.
- the amount of oxygen required to completely oxidize 1 mol of hexamethyldisiloxane is 12 mol.
- the film forming gas contains 12 moles or more of oxygen with respect to 1 mole of hexamethyldisiloxane and is completely reacted, a uniform silicon dioxide film is formed.
- the ratio is controlled to a flow rate equal to or less than the raw material ratio of the complete reaction, which is the theoretical ratio, and the incomplete reaction is performed. That is, the amount of oxygen must be less than the stoichiometric ratio of 12 moles per mole of hexamethyldisiloxane.
- the raw material hexamethyldisiloxane and the reaction gas oxygen are supplied from the gas supply port to the film formation region to form a film, so that the molar amount of oxygen in the reaction gas ( Even if the flow rate is 12 times the molar amount (flow rate) of hexamethyldisiloxane as the raw material, the reaction cannot actually proceed completely. It is considered that the reaction is completed only when a large excess is supplied as compared with the stoichiometric ratio (for example, in order to obtain silicon oxide by complete oxidation by the CVD method, the molar amount (flow rate) of oxygen is changed to the hexamethyldioxide raw material.
- the molar amount (flow rate) of oxygen with respect to the molar amount (flow rate) of the raw material hexamethyldisiloxane is preferably an amount of 12 times or less (more preferably 10 times or less) which is the stoichiometric ratio. .
- the gas barrier film obtained can exhibit excellent barrier properties and bending resistance.
- the lower limit of the molar amount (flow rate) of oxygen relative to the molar amount (flow rate) of hexamethyldisiloxane in the film forming gas should be greater than 0.1 times the molar amount (flow rate) of hexamethyldisiloxane. It is more preferable that the amount be more than 0.5 times.
- the pressure (degree of vacuum) in the vacuum chamber can be appropriately adjusted according to the type of the raw material gas, but is preferably in the range of 0.5 to 100 Pa.
- an electrode drum connected to the plasma generating power source 51 (in the present embodiment, it is installed on the film forming rollers 31 and 32).
- the electric power applied to can be appropriately adjusted according to the type of raw material gas, the pressure in the vacuum chamber, etc., and cannot be generally stated, but is preferably in the range of 0.1 to 10 kW. If the applied power is in such a range, no generation of particles is observed, and the amount of heat generated during film formation is within the control. There is no loss or wrinkle generation during film formation. In addition, there is little possibility that the film substrate 4 is melted by heat, and a large current discharge is generated between the bare film forming rollers to damage the film forming roller itself.
- the conveyance speed (line speed) of the film substrate 4 can be appropriately adjusted according to the type of source gas, the pressure in the vacuum chamber, etc., but is preferably in the range of 0.25 to 100 m / min. More preferably, it is in the range of 5 to 20 m / min. When the line speed is within the above range, wrinkles due to heat of the film substrate 4 are hardly generated, and the thickness of the formed gas barrier layer 5 can be sufficiently controlled.
- the gas barrier layer according to the present invention is characterized by being composed of at least two kinds of gas barrier layers having different constituent elements or different distribution states.
- a coating film of a coating-type polysilazane-containing liquid is provided on the first gas barrier layer according to the present invention, and a modification treatment is performed by irradiating vacuum ultraviolet light (VUV light) having a wavelength of 200 nm or less.
- VUV light vacuum ultraviolet light
- the thickness of the second gas barrier layer is preferably in the range of 1 to 500 nm, more preferably in the range of 10 to 300 nm. If the thickness is greater than 1 nm, gas barrier performance can be exhibited. If the thickness is within 500 nm, cracks are unlikely to occur in the dense silicon oxide film.
- polysilazane represented by the general formula (A) can be used.
- Perhydropolysilazane in which all of R 1 , R 2, and R 3 in the general formula (A) are hydrogen atoms is particularly preferred from the viewpoint of the denseness of the resulting gas barrier layer.
- the second gas barrier layer can be formed by applying a coating liquid containing polysilazane on the gas barrier layer in the CVD method and drying it, followed by irradiation with vacuum ultraviolet rays.
- organic solvent for preparing a coating liquid containing polysilazane, it is preferable to avoid using an alcohol or water-containing one that easily reacts with polysilazane.
- hydrocarbon solvents such as aliphatic hydrocarbons, alicyclic hydrocarbons, aromatic hydrocarbons, halogenated hydrocarbon solvents, aliphatic ethers, ethers such as alicyclic ethers can be used, specifically, There are hydrocarbons such as pentane, hexane, cyclohexane, toluene, xylene, solvesso and turben, halogen hydrocarbons such as methylene chloride and trichloroethane, ethers such as dibutyl ether, dioxane and tetrahydrofuran. These organic solvents may be selected according to purposes such as the solubility of polysilazane and the evaporation rate of the solvent, and a plurality of organic solvents may be mixed.
- the concentration of polysilazane in the coating solution containing polysilazane varies depending on the thickness of the gas barrier layer and the pot life of the coating solution, but is preferably about 0.2 to 35% by mass.
- the coating solution is coated with a metal catalyst such as an amine catalyst, a Pt compound such as Pt acetylacetonate, a Pd compound such as propionic acid Pd, or an Rh compound such as Rh acetylacetonate. It can also be added. In the present invention, it is particularly preferable to use an amine catalyst.
- Specific amine catalysts include N, N-diethylethanolamine, N, N-dimethylethanolamine, triethanolamine, triethylamine, 3-morpholinopropylamine, N, N, N ′, N′-tetramethyl-1 , 3-diaminopropane, N, N, N ′, N′-tetramethyl-1,6-diaminohexane and the like.
- the amount of these catalysts added to the polysilazane is preferably in the range of 0.1 to 10% by weight, more preferably in the range of 0.2 to 5% by weight, based on the entire coating solution, and 0.5 to More preferably, it is in the range of 2% by mass. By setting the catalyst addition amount within this range, it is possible to avoid excessive silanol formation, film density reduction, film defect increase, and the like due to rapid progress of the reaction.
- any appropriate method can be adopted as a method of applying the coating liquid containing polysilazane.
- Specific examples include a roll coating method, a flow coating method, an ink jet method, a spray coating method, a printing method, a dip coating method, a cast film forming method, a bar coating method, and a gravure printing method.
- the thickness of the coating film can be appropriately set according to the purpose.
- the thickness of the coating film is preferably in the range of 50 nm to 2 ⁇ m, more preferably in the range of 70 nm to 1.5 ⁇ m, and more preferably in the range of 100 nm to 1 ⁇ m as the thickness after drying. More preferably.
- x and y are basically in the range of 2x + 3y ⁇ 4.
- the coating film contains silanol groups, and there are cases where 2 ⁇ x ⁇ 2.5.
- Si—H bonds and N—H bonds in perhydropolysilazane are relatively easily cleaved by excitation with vacuum ultraviolet irradiation and the like. It is considered that they are recombined as N (a dangling bond of Si may be formed). That is, it is cured as a SiNy composition without being oxidized. In this case, the polymer main chain is not broken. The breaking of Si—H bonds and N—H bonds is promoted by the presence of a catalyst and heating. The cut H is released out of the membrane as H 2 .
- Si—O—Si Bonds by Hydrolysis / Dehydration Condensation Si—N bonds in perhydropolysilazane are hydrolyzed by water, and the polymer main chain is cleaved to form Si—OH.
- Two Si—OH are dehydrated and condensed to form a Si—O—Si bond and harden. This is a reaction that occurs in the air, but during vacuum ultraviolet irradiation in an inert atmosphere, water vapor generated as outgas from the base material by the heat of irradiation is considered to be the main moisture source.
- Si—OH that cannot be dehydrated and condensed remains, and a cured film having a low gas barrier property represented by a composition of SiO 2.1 to 2.3 is obtained.
- Adjustment of the composition of silicon oxynitride in the layer obtained by subjecting the polysilazane-containing layer to vacuum ultraviolet irradiation can be performed by appropriately controlling the oxidation state by appropriately combining the oxidation mechanisms (1) to (4) described above. .
- the illuminance of the vacuum ultraviolet rays in the coating film surface for receiving the polysilazane coating film is in the range of 30 ⁇ 200mW / cm 2, in the range of 50 ⁇ 160mW / cm 2 It is more preferable.
- it is 30 mW / cm 2 or more, there is no concern that the reforming efficiency is lowered, and when it is 200 mW / cm 2 or less, the coating film is not ablated and the substrate is not damaged.
- Irradiation energy amount of the VUV in the polysilazane coating film surface is preferably in the range of 200 ⁇ 10000mJ / cm 2, and more preferably in the range of 500 ⁇ 5000mJ / cm 2.
- 200 mJ / cm 2 or more, the performed modification sufficiently, cracking and not excessive modification is 10000 mJ / cm 2 or less, there is no thermal deformation of the substrate.
- a rare gas excimer lamp is preferably used as the vacuum ultraviolet light source.
- Atoms of rare gases such as Xe, Kr, Ar and Ne are called inert gases because they are not chemically bonded to form molecules.
- excited atoms of rare gases that have gained energy by discharge or the like can form molecules by combining with other atoms.
- the rare gas is xenon, e + Xe ⁇ Xe * Xe * + 2Xe ⁇ Xe 2 * + Xe Xe 2 * ⁇ Xe + Xe + h ⁇ (172 nm)
- excimer light of 172 nm is emitted.
- ⁇ Excimer lamps are characterized by high efficiency because radiation concentrates on one wavelength and almost no other light is emitted. Further, since no extra light is emitted, the temperature of the object can be kept low. Furthermore, since no time is required for starting and restarting, instantaneous lighting and blinking are possible.
- Dielectric barrier discharge is a gas space created by placing a gas space between both electrodes via a dielectric such as transparent quartz and applying a high frequency high voltage of several tens of kHz to the electrode.
- the discharge is called a thin micro discharge.
- the micro discharge streamer reaches the tube wall (derivative)
- electric charges accumulate on the dielectric surface, and the micro discharge disappears.
- This micro discharge is a discharge that spreads over the entire tube wall and repeats generation and extinction. For this reason, flickering of light that can be confirmed with the naked eye occurs. Moreover, since a very high temperature streamer reaches a pipe wall directly locally, there is a possibility that deterioration of the pipe wall may be accelerated.
- Electrodeless electric field discharge by capacitive coupling, also called RF discharge.
- the lamp and electrodes and their arrangement may be basically the same as those of dielectric barrier discharge, but the high frequency applied between the two electrodes is lit at several MHz. Since the electrodeless field discharge can provide a spatially and temporally uniform discharge in this way, a long-life lamp without flickering can be obtained.
- the outer electrode covers the entire outer surface and transmits light to extract light to the outside in order to cause discharge in the entire discharge space. Must be a thing.
- an electrode in which fine metal wires are meshed is used. Since this electrode uses as thin a line as possible so as not to block light, it is easily damaged by ozone generated by vacuum ultraviolet light in an oxygen atmosphere. In order to prevent this, it is necessary to provide an atmosphere of an inert gas such as nitrogen around the lamp, that is, the inside of the irradiation apparatus, and provide a synthetic quartz window to extract the irradiation light. Synthetic quartz windows are not only expensive consumables, but also cause light loss.
- the outer diameter of the double-cylindrical lamp is about 25 mm, the difference in distance to the irradiation surface cannot be ignored directly below the lamp axis and on the side of the lamp, resulting in a large difference in illumination. Therefore, even if the lamps are closely arranged, a uniform illuminance distribution cannot be obtained. If the irradiation device is provided with a synthetic quartz window, the distance in the oxygen atmosphere can be made uniform, and a uniform illuminance distribution can be obtained.
- the biggest feature of the capillary excimer lamp is its simple structure.
- the quartz tube is closed at both ends, and only gas for excimer light emission is sealed inside.
- the outer diameter of the tube of the thin tube lamp is about 6 nm to 12 mm. If it is too thick, a high voltage is required for starting.
- the electrode may have a flat surface in contact with the lamp, but if the shape is matched to the curved surface of the lamp, the lamp can be firmly fixed and the discharge is more stable when the electrode is in close contact with the lamp. Also, if the curved surface is made into a mirror surface with aluminum, it also becomes a light reflector.
- the Xe excimer lamp emits ultraviolet light having a short wavelength of 172 nm at a single wavelength, and thus has excellent luminous efficiency. Since this light has a large oxygen absorption coefficient, it can generate radical oxygen atom species and ozone at a high concentration with a very small amount of oxygen.
- the energy of light having a short wavelength of 172 nm has a high ability to dissociate organic bonds. Due to the high energy of the active oxygen, ozone and ultraviolet radiation, the polysilazane layer can be modified in a short time.
- ⁇ Excimer lamps have high light generation efficiency and can be lit with low power.
- light having a long wavelength that causes a temperature increase due to light is not emitted, and energy is irradiated in the ultraviolet region, that is, in a short wavelength, so that the increase in the surface temperature of the target object is suppressed.
- it is suitable for flexible film materials such as PET that are easily affected by heat.
- the oxygen concentration at the time of vacuum ultraviolet irradiation is preferably in the range of 10 to 10000 ppm, more preferably in the range of 50 to 5000 ppm, and still more preferably in the range of 1000 to 4500 ppm.
- the gas satisfying the irradiation atmosphere used at the time of irradiation with vacuum ultraviolet rays is preferably a dry inert gas, and particularly preferably dry nitrogen gas from the viewpoint of cost.
- the oxygen concentration can be adjusted by measuring the flow rate of oxygen gas and inert gas introduced into the irradiation chamber and changing the flow rate ratio.
- the film substrate 4 on which the transparent electrode 2 is formed examples include, but are not limited to, the following resin films.
- a transparent resin film can be exemplified.
- polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyethylene, polypropylene, cellophane, cellulose diacetate, cellulose triacetate (TAC), cellulose acetate butyrate, cellulose acetate propionate ( CAP), cellulose esters such as cellulose acetate phthalate, cellulose nitrate or derivatives thereof, polyvinylidene chloride, polyvinyl alcohol, polyethylene vinyl alcohol, syndiotactic polystyrene, polycarbonate, norbornene resin, polymethylpentene, polyether ketone, polyimide , Polyethersulfone (PES), polyphenylene sulfide, polysulfones Cycloolefin resins such as polyetherimide, polyetherketoneimide, polyamide, fluororesin, nylon, polymethylmethacrylate, acrylic or polyarylate, Arton (trade name, manufactured by JSR) or Appel (trade name, manufactured by J
- the organic electroluminescence (organic EL element) of the present invention has a light emitting unit having an organic functional layer sandwiched between a pair of electrodes composed of the following anode and cathode.
- the electrode will be described in detail.
- anode transparent electrode
- an electrode material made of a metal, an alloy, an electrically conductive compound, or a mixture thereof having a high work function (4 eV or more) is preferably used.
- an electrode substance include conductive transparent materials such as metals such as Au and Ag, CuI, indium tin oxide (ITO), SnO 2 , and ZnO.
- conductive transparent materials such as metals such as Au and Ag, CuI, indium tin oxide (ITO), SnO 2 , and ZnO.
- an amorphous material such as IDIXO (In 2 O 3 —ZnO) that can form a transparent conductive film may be used.
- the anode may be formed by depositing a thin film of these electrode materials by vapor deposition or sputtering, and a pattern having a desired shape may be formed by photolithography, or when pattern accuracy is not so high (about 100 ⁇ m or more) A pattern may be formed through a mask having a desired shape at the time of vapor deposition or sputtering of the electrode material. Or when using the substance which can be apply
- the transparent electrode 2 having an embodiment as shown in FIG. 1 as the anode.
- the transparent electrode 2 has a two-layer structure in which a base layer 2a and an electrode layer 2b formed thereon are sequentially laminated from the film substrate 4 side.
- the electrode layer 2b is a layer comprised using silver or the alloy which has silver as a main component
- the base layer 2a is a layer comprised using the compound containing a nitrogen atom, for example.
- the transparency of the transparent electrode 2 means that the light transmittance at a wavelength of 550 nm is 50% or more.
- the underlayer 2a is a layer provided on the film substrate 4 side of the electrode layer 2b.
- the material constituting the base layer 2a is not particularly limited as long as it can suppress the aggregation of silver when forming the electrode layer 2b made of silver or an alloy containing silver as a main component. And compounds containing a nitrogen atom or a sulfur atom.
- the upper limit of the layer thickness needs to be less than 50 nm, preferably less than 30 nm, and preferably less than 10 nm. Is more preferable, and it is especially preferable that it is less than 5 nm. By making the layer thickness less than 50 nm, optical loss can be minimized.
- the lower limit of the layer thickness is required to be 0.05 nm or more, preferably 0.1 nm or more, and particularly preferably 0.3 nm or more.
- the underlayer 2a By setting the layer thickness to 0.05 nm or more, the underlayer 2a can be formed uniformly and the effect (inhibition of silver aggregation) can be made uniform.
- the underlayer 2a is made of a high refractive index material (refractive index of 1.7 or more)
- the upper limit of the layer thickness is not particularly limited, and the lower limit of the layer thickness is the same as that of the low refractive index material. is there.
- the base layer 2a it is sufficient if the base layer 2a is formed with a necessary layer thickness that allows uniform film formation.
- a wet process such as a coating method, an ink jet method, a coating method, a dip method, or a dry process such as a vapor deposition method (resistance heating, EB method, etc.), a sputtering method, a CVD method or the like is used. And the like. Among these, the vapor deposition method is preferably applied.
- the compound containing a nitrogen atom constituting the underlayer 2a is not particularly limited as long as it is a compound containing a nitrogen atom in the molecule, but is preferably a compound having a heterocycle having a nitrogen atom as a heteroatom. .
- heterocycle having a nitrogen atom as a hetero atom examples include aziridine, azirine, azetidine, azeto, azolidine, azole, azinane, pyridine, azepan, azepine, imidazole, pyrazole, oxazole, thiazole, imidazoline, pyrazine, morpholine, thiazine, indole, Examples include isoindole, benzimidazole, purine, quinoline, isoquinoline, quinoxaline, cinnoline, pteridine, acridine, carbazole, benzo-C-cinnoline, porphyrin, chlorin, choline and the like.
- the electrode layer 2b is a layer formed using silver or an alloy containing silver as a main component, and is a layer formed on the base layer 2a.
- a method for forming such an electrode layer 2b a method using a wet process such as a coating method, an inkjet method, a coating method, a dip method, a vapor deposition method (resistance heating, EB method, etc.), a sputtering method, a CVD method, etc. And a method using the dry process.
- the vapor deposition method is preferably applied.
- the electrode layer 2b is formed on the base layer 2a, so that the electrode layer 2b has sufficient conductivity even if there is no high-temperature annealing treatment after the electrode layer 2b is formed.
- the film may be subjected to high-temperature annealing after film formation.
- Examples of the alloy mainly composed of silver (Ag) constituting the electrode layer 2b include silver magnesium (AgMg), silver copper (AgCu), silver palladium (AgPd), silver palladium copper (AgPdCu), and silver indium (AgIn). ) And the like.
- the electrode layer 2b as described above may have a structure in which silver or an alloy layer mainly composed of silver is divided into a plurality of layers as necessary.
- the electrode layer 2b preferably has a layer thickness in the range of 4 to 9 nm.
- the layer thickness is thinner than 9 nm, the absorption component or reflection component of the layer is small, and the transmittance of the transparent electrode is increased. Further, when the layer thickness is thicker than 4 nm, the conductivity of the layer can be sufficiently secured.
- the transparent electrode 2 having a laminated structure composed of the base layer 2a and the electrode layer 2b formed thereon is covered with a protective film at the upper part of the electrode layer 2b, It may be laminated. In this case, it is preferable that the protective film and the other electrode layer have light transmittance so as not to impair the light transmittance of the transparent electrode 2.
- the transparent electrode 2 having the above-described configuration includes, for example, an electrode layer 2b made of silver or an alloy containing silver as a main component on an underlayer 2a configured using a compound containing nitrogen atoms. It is a configuration.
- the electrode layer 2b is formed on the base layer 2a, the silver atoms constituting the electrode layer 2b interact with the compound containing nitrogen atoms constituting the base layer 2a. The diffusion distance on the surface of the formation 2a is reduced, and silver aggregation is suppressed.
- the electrode layer 2b containing silver as a main component since the thin film is grown by a nuclear growth type (Volume-Weber: VW type), the silver particles are easily isolated in an island shape, and the layer thickness is increased. When the thickness is thin, it is difficult to obtain conductivity, and the sheet resistance value becomes high. Therefore, it is necessary to increase the layer thickness in order to ensure conductivity. However, if the layer thickness is increased, the light transmittance is lowered, so that it is not suitable as a transparent electrode.
- a nuclear growth type Volume-Weber: VW type
- the transparent electrode 2 since aggregation of silver is suppressed on the underlayer 2a as described above, in the film formation of the electrode layer 2b made of silver or an alloy containing silver as a main component, a single layer growth type is used. Thin films grow with (Frank-van der Merwe: FM type).
- the transparent of the transparent electrode 2 means that the light transmittance at a wavelength of 550 nm is 50% or more.
- each of the above materials used as the base layer 2a is mainly composed of silver or silver.
- the film has a sufficiently good light transmittance.
- the conductivity of the transparent electrode 2 is ensured mainly by the electrode layer 2b. Therefore, as described above, the electrode layer 2b made of silver or an alloy containing silver as a main component has a thinner layer to ensure conductivity, thereby improving the conductivity of the transparent electrode 2 and light. It becomes possible to achieve a balance with the improvement of permeability.
- the cathode (counter electrode) 6 is an electrode film that functions as a cathode (cathode) that supplies electrons to the light emitting unit 3.
- a material having a work function (4 eV or less) metal referred to as an electron injecting metal
- an alloy referred to as an electrically conductive compound
- a mixture thereof as an electrode material is used.
- Specific examples of such electrode materials include sodium, sodium-potassium alloy, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, aluminum / aluminum oxide (Al 2 O 3 ) Mixtures, indium, lithium / aluminum mixtures, rare earth metals and the like.
- a mixture of an electron injecting metal and a second metal which is a stable metal having a larger work function than this for example, a magnesium / silver mixture
- Suitable are a magnesium / aluminum mixture, a magnesium / indium mixture, an aluminum / aluminum oxide (Al 2 O 3 ) mixture, a lithium / aluminum mixture, aluminum and the like.
- the cathode can be produced by forming a thin film of these electrode materials by a method such as vapor deposition or sputtering.
- the sheet resistance as the cathode is preferably several hundred ⁇ / ⁇ or less, and the film thickness is usually selected in the range of 10 nm to 5 ⁇ m, preferably 50 to 200 nm.
- the film thickness is usually selected in the range of 10 nm to 5 ⁇ m, preferably 50 to 200 nm.
- the organic EL element 100 is a device that extracts the emitted light h from the cathode (counter electrode) 6 side, a conductive material having good light transmittance is selected from the conductive materials described above.
- the counter electrode 6 may be configured.
- the auxiliary electrode 15 is provided for the purpose of reducing the resistance of the transparent electrode 2, and is preferably provided in contact with the electrode layer 2 b of the transparent electrode 2.
- the material forming the auxiliary electrode 15 is preferably a metal having low resistance such as gold, platinum, silver, copper, or aluminum. Since these metals have low light transmittance, a pattern is formed in a range not affected by extraction of the emitted light h from the light extraction surface 13a.
- Examples of the method of forming the auxiliary electrode 15 include a vapor deposition method, a sputtering method, a printing method, an ink jet method, and an aerosol jet method.
- the line width of the auxiliary electrode 15 is preferably 50 ⁇ m or less from the viewpoint of the aperture ratio for extracting light, and the thickness of the auxiliary electrode 15 is preferably 1 ⁇ m or more from the viewpoint of conductivity.
- the extraction electrode 16 is for electrically connecting the transparent electrode 2 and an external power source, and the material thereof is not particularly limited, and a known material can be suitably used.
- a metal film such as a MAM electrode (Mo / Al ⁇ Nd alloy / Mo) can be used.
- the light-emitting unit refers to a light-emitting body (unit) composed mainly of an organic functional layer such as a light-emitting layer, a hole transport layer, and an electron transport layer containing at least various organic compounds described below.
- the luminous body is sandwiched between a pair of electrodes consisting of an anode and a cathode, and light is emitted by recombination of holes (holes) supplied from the anode and electrons supplied from the cathode in the luminous body. To do.
- the light emitting unit 3 used in the present invention includes, for example, a hole injection layer 3a / a hole transport layer 3b / a light emitting layer 3c / an electron transport layer 3d / an electron injection layer 3e in this order from the transparent electrode 2 side which is an anode.
- a stacked configuration is exemplified. Hereinafter, each layer will be described in detail.
- the light emitting layer 3c used in the present invention contains a phosphorescent light emitting compound as a light emitting material.
- the light emitting layer 3c is a layer that emits light by recombination of electrons injected from the electrode or the electron transport layer 3d and holes injected from the hole transport layer 3b, and the light emitting portion is the light emitting layer 3c. Even within the layer, it may be the interface between the light emitting layer 3c and the adjacent layer.
- the light emitting layer 3c is not particularly limited in its configuration as long as the light emitting material contained satisfies the light emission requirements. Moreover, there may be a plurality of layers having the same emission spectrum and emission maximum wavelength. In this case, it is preferable to have a non-light emitting intermediate layer (not shown) between the light emitting layers 3c.
- the total thickness of the light emitting layer 3c is preferably in the range of 1 to 100 nm, and more preferably in the range of 1 to 30 nm because a lower driving voltage can be obtained.
- the sum total of the layer thickness of the light emitting layer 3c is a layer thickness also including the said intermediate
- the thickness of each light emitting layer is preferably adjusted within the range of 1 to 50 nm, more preferably within the range of 1 to 20 nm. More preferred.
- the plurality of stacked light emitting layers correspond to blue, green, and red light emission colors, there is no particular limitation on the relationship between the thicknesses of the blue, green, and red light emitting layers.
- the light emitting layer 3c as described above is formed by forming a light emitting material or a host compound described later by a known thin film forming method such as a vacuum deposition method, a spin coating method, a casting method, an LB method, or an ink jet method. be able to.
- the light emitting layer 3c may be a mixture of a plurality of light emitting materials, and a phosphorescent light emitting material and a fluorescent light emitting material (also referred to as a fluorescent dopant or a fluorescent compound) are mixed and used in the same light emitting layer 3c. Also good.
- the structure of the light emitting layer 3c preferably contains a host compound (also referred to as a light emitting host or the like) and a light emitting material (also referred to as a light emitting dopant), and emits light from the light emitting material.
- a host compound also referred to as a light emitting host or the like
- a light emitting material also referred to as a light emitting dopant
- Host compound As the host compound contained in the light emitting layer 3c, a compound having a phosphorescence quantum yield of phosphorescence emission at room temperature (25 ° C) of less than 0.1 is preferable. More preferably, the phosphorescence quantum yield is less than 0.01. Moreover, it is preferable that the volume ratio in the layer is 50% or more among the compounds contained in the light emitting layer 3c.
- the host compound a known host compound may be used alone, or a plurality of types may be used. By using a plurality of types of host compounds, it is possible to adjust the movement of charges, and the organic EL element 100 can be made highly efficient. In addition, by using a plurality of kinds of light emitting materials described later, it is possible to mix different light emission, thereby obtaining an arbitrary light emission color.
- the host compound used may be a conventionally known low molecular compound, a high molecular compound having a repeating unit, or a low molecular compound having a polymerizable group such as a vinyl group or an epoxy group (evaporation polymerizable light emitting host). .
- the known host compound is preferably a compound that has a hole transporting ability and an electron transporting ability, prevents the emission of light from becoming longer, and has a high Tg (glass transition temperature).
- the glass transition point (Tg) is a value obtained by a method based on JIS K 7121 using DSC (Differential Scanning Colorimetry).
- Gazette 2002-231453, 2003-3165, 2002-234888, 2003-27048, 2002-255934, 2002-260861, 2002-280183 No. 2002-299060, No. 2002-302516, No. 2002-305083, No. 2002-305084, No. 2002-308837, and the like.
- Luminescent material As the luminescent material that can be used in the present invention, a phosphorescent compound (also referred to as a phosphorescent compound or a phosphorescent material) and a fluorescent compound (fluorescent compound, fluorescent) Also referred to as a light-emitting material).
- a phosphorescent compound also referred to as a phosphorescent compound or a phosphorescent material
- a fluorescent compound fluorescent compound, fluorescent
- the phosphorescent compound is a compound in which light emission from an excited triplet is observed. Specifically, it is a compound that emits phosphorescence at room temperature (25 ° C.), and the phosphorescence quantum yield is 0 at 25 ° C. A preferred phosphorescence quantum yield is 0.1 or more, although it is defined as 0.01 or more compounds.
- the phosphorescent quantum yield can be measured by the method described in Spectroscopic II, page 398 (1992 edition, Maruzen) of the Fourth Edition Experimental Chemistry Course 7. Although the phosphorescence quantum yield in a solution can be measured using various solvents, when the phosphorescent compound is used in the present invention, the above phosphorescence quantum yield (0.01 or more) is obtained in any solvent. It only has to be achieved.
- phosphorescent compounds There are two types of light emission principles of phosphorescent compounds. One is that recombination of carriers occurs on the host compound to which carriers are transported to generate an excited state of the host compound, and this energy is transferred to the phosphorescent compound to emit light from the phosphorescent compound.
- the other is a carrier in which the phosphorescent compound becomes a carrier trap and recombination of carriers occurs on the phosphorescent compound, and light emission from the phosphorescent compound is obtained. It is a trap type. In either case, the condition is that the excited state energy of the phosphorescent compound is lower than the excited state energy of the host compound.
- the phosphorescent compound can be appropriately selected from known compounds used for the light-emitting layer of a general organic EL device, but preferably contains a group 8 to 10 metal in the periodic table of elements. More preferred are iridium compounds, osmium compounds, platinum compounds (platinum complex compounds) or rare earth complexes, and most preferred are iridium compounds.
- At least one light emitting layer 3c may contain two or more phosphorescent compounds, and the concentration ratio of the phosphorescent compounds in the light emitting layer 3c is in the thickness direction of the light emitting layer 3c. It may have changed.
- the phosphorescent compound is preferably 0.1% by volume or more and less than 30% by volume with respect to the total amount of the light emitting layer 3c.
- the phosphorescent compound can be appropriately selected from known compounds used for the light emitting layer of the organic EL device.
- ⁇ Silluminescent compound As the fluorescent compound, coumarin dyes, pyran dyes, cyanine dyes, croconium dyes, squalium dyes, oxobenzanthracene dyes, fluorescein dyes, rhodamine dyes, pyrylium dyes, perylene dyes, Examples thereof include stilbene dyes, polythiophene dyes, and rare earth complex phosphors.
- the injection layer is a layer provided between the electrode and the light emitting layer 3c in order to lower the driving voltage or improve the light emission luminance.
- the organic EL element and its forefront of industrialization June 30, 1998, NTT) (Published by S. Co., Ltd.) ”in the second volume, Chapter 2,“ Electrode Materials ”(pages 123 to 166), which includes a hole injection layer 3a and an electron injection layer 3e.
- the injection layer can be provided as necessary.
- the hole injection layer 3a may be present between the anode and the light emitting layer 3c or the hole transport layer 3b, and the electron injection layer 3e may be present between the cathode and the light emitting layer 3c or the electron transport layer 3d. .
- JP-A-9-45479 JP-A-9-260062, JP-A-8-288069 and the like.
- Specific examples thereof include phthalocyanine represented by copper phthalocyanine.
- examples thereof include a layer, an oxide layer typified by vanadium oxide, an amorphous carbon layer, and a polymer layer using a conductive polymer such as polyaniline (emeraldine) or polythiophene.
- the electron injection layer 3e Details of the electron injection layer 3e are described in JP-A-6-325871, JP-A-9-17574, JP-A-10-74586, and the like, and specifically, strontium, aluminum and the like are represented. Examples thereof include a metal layer, an alkali metal halide layer typified by potassium fluoride, an alkaline earth metal compound layer typified by magnesium fluoride, and an oxide layer typified by molybdenum oxide.
- the electron injection layer 3e according to the present invention is preferably a very thin layer, and the layer thickness is preferably in the range of 1 nm to 10 ⁇ m, depending on the material.
- the hole transport layer 3b is made of a hole transport material having a function of transporting holes, and in a broad sense, the hole injection layer 3a and the electron blocking layer are also included in the hole transport layer 3b.
- the hole transport layer 3b can be provided as a single layer or a plurality of layers.
- the hole transport material has any of hole injection or transport and electron barrier properties, and may be either organic or inorganic.
- triazole derivatives oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives and pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives
- Examples thereof include stilbene derivatives, silazane derivatives, aniline copolymers, conductive polymer oligomers, particularly thiophene oligomers.
- hole transport material those described above can be used, but it is preferable to use a porphyrin compound, an aromatic tertiary amine compound and a styrylamine compound, particularly an aromatic tertiary amine compound.
- aromatic tertiary amine compounds and styrylamine compounds include N, N, N ′, N′-tetraphenyl-4,4′-diaminophenyl, N, N′-diphenyl-N, N′— Bis (3-methylphenyl)-[1,1'-biphenyl] -4,4'-diamine (TPD), 2,2-bis (4-di-p-tolylaminophenyl) propane, 1,1-bis (4-di-p-tolylaminophenyl) cyclohexane, N, N, N ′, N′-tetra-p-tolyl-4,4′-diaminobiphenyl, 1,1-bis (4-di-p-tolyl) Aminophenyl) -4-phenylcyclohexane, bis (4-dimethylamino-2-methylphenyl) phenylmethane, bis (4-di-p-tolylaminoph
- polymer materials in which these materials are introduced into polymer chains or these materials are used as polymer main chains can also be used.
- inorganic compounds such as p-type-Si and p-type-SiC can also be used as the hole injection material and the hole transport material.
- a so-called p-type hole transport material as described in 139 can also be used. In the present invention, it is preferable to use these materials because a light-emitting element with higher efficiency can be obtained.
- the hole transport layer 3b is formed by thinning the hole transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an inkjet method, or an LB method. be able to.
- the layer thickness of the hole transport layer 3b is not particularly limited, but is usually in the range of about 5 nm to 5 ⁇ m, preferably 5 to 200 nm.
- the hole transport layer 3b may have a single layer structure composed of one or more of the above materials.
- Examples thereof include JP-A-4-297076, JP-A-2000-196140, 2001-102175, J.A. Appl. Phys. 95, 5773 (2004), and the like.
- the electron transport layer 3d is made of a material having a function of transporting electrons.
- the electron injection layer 3e and a hole blocking layer are also included in the electron transport layer 3d.
- the electron transport layer 3d can be provided as a single layer structure or a multi-layer structure.
- an electron transport material also serving as a hole blocking material constituting a layer portion adjacent to the light emitting layer 3c
- electrons injected from the cathode are used. What is necessary is just to have the function to transmit to the light emitting layer 3c.
- any one of conventionally known compounds can be selected and used. Examples include nitro-substituted fluorene derivatives, diphenylquinone derivatives, thiopyran dioxide derivatives, carbodiimides, fluorenylidenemethane derivatives, anthraquinodimethane, anthrone derivatives, and oxadiazole derivatives.
- a thiadiazole derivative in which an oxygen atom of the oxadiazole ring is substituted with a sulfur atom, and a quinoxaline derivative having a quinoxaline ring known as an electron withdrawing group are also used as the material for the electron transport layer 3d.
- a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used.
- metal complexes of 8-quinolinol derivatives such as tris (8-quinolinol) aluminum (Alq 3 ), tris (5,7-dichloro-8-quinolinol) aluminum, tris (5,7-dibromo-8-quinolinol) Aluminum, tris (2-methyl-8-quinolinol) aluminum, tris (5-methyl-8-quinolinol) aluminum, bis (8-quinolinol) zinc (Znq), etc. and the central metals of these metal complexes are In, Mg, A metal complex replaced with Cu, Ca, Sn, Ga, or Pb can also be used as the material of the electron transport layer 3d.
- metal-free or metal phthalocyanine or those whose terminal is substituted with an alkyl group or a sulfonic acid group can be preferably used as the material for the electron transport layer 3d.
- a distyrylpyrazine derivative that is also used as a material for the light emitting layer 3c can be used as a material for the electron transport layer 3d.
- n-type-Si, n-type An inorganic semiconductor such as -SiC can also be used as the material of the electron transport layer 3d.
- the electron transport layer 3d can be formed by thinning the above material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method.
- the thickness of the electron transport layer 3d is not particularly limited, but is usually about 5 nm to 5 ⁇ m, preferably 5 to 200 nm.
- the electron transport layer 3d may have a single layer structure composed of one or more of the above materials.
- the electron transport layer 3d can be doped with an impurity to increase the n property.
- examples thereof include JP-A-4-297076, JP-A-10-270172, JP-A-2000-196140, 2001-102175, J.A. Appl. Phys. 95, 5773 (2004), and the like.
- the electron transport layer 3d contains potassium, a potassium compound, or the like.
- the potassium compound for example, potassium fluoride can be used.
- the material (electron transporting compound) of the electron transport layer 3d the same material as that of the base layer 2a described above may be used. This is the same for the electron transport layer 3d that also serves as the electron injection layer 3e, and the same material as that for the base layer 2a described above may be used.
- ⁇ Blocking layer hole blocking layer, electron blocking layer>
- the blocking layer is provided as necessary in addition to the basic constituent layer of the organic compound thin film. For example, as described in JP-A Nos. 11-204258 and 11-204359 and “Organic EL elements and the forefront of industrialization (published by NTT Corporation on November 30, 1998)”. There is a hole blocking layer.
- the hole blocking layer has the function of the electron transport layer 3d in a broad sense.
- the hole blocking layer is made of a hole blocking material that has a function of transporting electrons but has a very small ability to transport holes, and recombines electrons and holes by blocking holes while transporting electrons. Probability can be improved.
- the structure of the electron carrying layer 3d can be used as a hole-blocking layer as needed.
- the hole blocking layer is preferably provided adjacent to the light emitting layer 3c.
- the electron blocking layer has the function of the hole transport layer 3b in a broad sense.
- the electron blocking layer is made of a material that has a function of transporting holes but has a very small ability to transport electrons, and improves the probability of recombination of electrons and holes by blocking electrons while transporting holes. be able to.
- the structure of the positive hole transport layer 3b can be used as an electron blocking layer as needed.
- the thickness of the hole blocking layer is preferably in the range of 3 to 100 nm, more preferably in the range of 5 to 30 nm.
- the sealing material 17 covers the organic EL element 100 and may be a plate-like (film-like) sealing member that is fixed to the film substrate 4 side by the adhesive 19. It may be a stop film. Such a sealing material 17 is provided in a state in which the terminal portions of the transparent electrode 2 and the counter electrode 6 in the organic EL element 100 are exposed and at least the light emitting unit 3 is covered. Further, an electrode may be provided on the sealing material 17 so that the transparent electrode 2 and the terminal portion of the counter electrode 6 of the organic EL element 100 are electrically connected to this electrode.
- the plate-like (film-like) sealing material 17 include a glass substrate, a polymer substrate, a metal substrate, and the like, and these substrate materials may be used in the form of a thinner film.
- the glass substrate include soda-lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, and quartz.
- the polymer substrate include polycarbonate, acrylic, polyethylene terephthalate, polyether sulfide, and polysulfone.
- the metal substrate include those made of one or more metals or alloys selected from the group consisting of stainless steel, iron, copper, aluminum, magnesium, nickel, zinc, chromium, titanium, molybdenum, silicon, germanium, and tantalum.
- a thin film-like polymer substrate or metal substrate can be preferably used as the sealing material.
- the polymer substrate in the form of a film has an oxygen permeability measured by a method according to JIS K 7126-1987 of 1 ⁇ 10 ⁇ 3 ml / m 2 ⁇ 24 h ⁇ atm or less, according to JIS K 7129-1992.
- the water vapor permeability (25 ⁇ 0.5 ° C., relative humidity (90 ⁇ 2)% RH) measured by the above method is preferably 1 ⁇ 10 ⁇ 3 g / m 2 ⁇ 24 h or less.
- the above substrate material may be processed into a concave plate shape and used as the sealing material 17.
- the substrate member described above is subjected to processing such as sandblasting and chemical etching to form a concave shape.
- the adhesive 19 for fixing the plate-shaped sealing material 17 to the film substrate 4 side seals the organic EL element 100 sandwiched between the sealing material 17 and the film substrate 4. It is used as a sealing agent.
- Specific examples of such an adhesive 19 include photocuring and thermosetting adhesives having reactive vinyl groups of acrylic acid oligomers and methacrylic acid oligomers, moisture curing types such as 2-cyanoacrylates, and the like. Can be mentioned.
- examples of the adhesive 19 include an epoxy-based thermal and chemical curing type (two-component mixing). Moreover, hot-melt type polyamide, polyester, and polyolefin can be mentioned. Moreover, a cationic curing type ultraviolet curing epoxy resin adhesive can be mentioned.
- the adhesive 19 is preferably one that can be adhesively cured from room temperature to 80 ° C. Further, a desiccant may be dispersed in the adhesive 19.
- Application of the adhesive 19 to the bonding portion between the sealing material 17 and the film substrate 4 may be performed using a commercially available dispenser or may be printed like screen printing.
- the gap may include an inert gas such as nitrogen or argon or a fluorine in the gas phase and the liquid phase. It is preferable to inject an inert liquid such as activated hydrocarbon or silicon oil. A vacuum can also be used. Moreover, a hygroscopic compound can also be enclosed inside.
- an inert gas such as nitrogen or argon or a fluorine in the gas phase and the liquid phase. It is preferable to inject an inert liquid such as activated hydrocarbon or silicon oil. A vacuum can also be used.
- a hygroscopic compound can also be enclosed inside.
- hygroscopic compound examples include metal oxides (for example, sodium oxide, potassium oxide, calcium oxide, barium oxide, magnesium oxide, aluminum oxide) and sulfates (for example, sodium sulfate, calcium sulfate, magnesium sulfate, cobalt sulfate).
- metal oxides for example, sodium oxide, potassium oxide, calcium oxide, barium oxide, magnesium oxide, aluminum oxide
- sulfates for example, sodium sulfate, calcium sulfate, magnesium sulfate, cobalt sulfate.
- metal halides eg calcium chloride, magnesium chloride, cesium fluoride, tantalum fluoride, cerium bromide, magnesium bromide, barium iodide, magnesium iodide etc.
- perchloric acids eg perchloric acid Barium, magnesium perchlorate, and the like
- anhydrous salts are preferably used in sulfates, metal halides, and perchloric acids.
- sealing film when a sealing film is used as the sealing material 17, the film is completely covered with the light emitting unit 3 in the organic EL element 100 and the terminal portions of the transparent electrode 2 and the counter electrode 6 in the organic EL element 100 are exposed.
- a sealing film is provided on the substrate 4.
- Such a sealing film is composed of an inorganic material or an organic material.
- it is made of a material having a function of suppressing entry of substances such as moisture and oxygen that cause deterioration of the light emitting unit 3 in the organic EL element 100.
- a material for example, inorganic materials such as silicon oxide, silicon dioxide, and silicon nitride are used.
- a laminated structure may be formed by using a film made of an organic material together with a film made of these inorganic materials.
- the method for forming these films is not particularly limited.
- vacuum deposition method sputtering method, reactive sputtering method, molecular beam epitaxy method, cluster ion beam method, ion plating method, plasma polymerization method, atmospheric pressure plasma
- a polymerization method a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used.
- a protective film or a protective plate may be provided between the film substrate 4 and the organic EL element 100 and the sealing material 17.
- This protective film or protective plate is for mechanically protecting the organic EL element 100, and in particular when the sealing material 17 is a sealing film, sufficient mechanical protection is provided for the organic EL element 100. Therefore, it is preferable to provide such a protective film or protective plate.
- a glass plate, a polymer plate, a thinner polymer film, a metal plate, a thinner metal film, a polymer material film or a metal material film is applied.
- a polymer film because it is lightweight and thin.
- a light scattering layer 7 is formed on a film substrate 4 by applying a resin material solution in which particles having an average particle diameter of 0.2 ⁇ m or more are dispersed.
- a resin material solution in which particles having an average particle diameter of 5 to 70 nm are dispersed is applied onto the light scattering layer 7 to produce the smooth layer 1.
- an underlayer 2a made of a compound containing nitrogen atoms is deposited by an appropriate method such as a vapor deposition method so as to have a layer thickness of 1 ⁇ m or less, preferably in the range of 10 to 100 nm.
- the electrode layer 2b made of silver (or an alloy containing silver as a main component) is formed on the base layer 2a by an appropriate method such as vapor deposition so that the layer thickness is 12 nm or less, preferably 4 to 9 nm.
- the transparent electrode 2 to be an anode is produced.
- an extraction electrode 16 connected to an external power source is formed at the transparent electrode 2 end by an appropriate method such as a vapor deposition method.
- a hole injection layer 3 a, a hole transport layer 3 b, a light emitting layer 3 c, an electron transport layer 3 d, and an electron injection layer 3 e are formed in this order to form the light emitting unit 3.
- the film formation of each of these layers includes spin coating, casting, ink jet, vapor deposition, and printing, but vacuum vapor deposition is easy because a homogeneous film is easily obtained and pinholes are difficult to generate.
- the method or spin coating method is particularly preferred.
- different film forming methods may be applied for each layer. When a vapor deposition method is employed for forming each of these layers, the vapor deposition conditions vary depending on the type of compound used, but generally a boat heating temperature of 50 to 450 ° C.
- the counter electrode 6 serving as a cathode is formed thereon by an appropriate film forming method such as a vapor deposition method or a sputtering method.
- the counter electrode 6 is formed into a pattern in which a terminal portion is drawn from the upper side of the light emitting unit 3 to the periphery of the film substrate 4 while being kept insulated from the transparent electrode 2 by the light emitting unit 3.
- the organic EL element 100 is obtained.
- a sealing material 17 that covers at least the light emitting unit 3 is provided in a state where the transparent electrode 2 (extraction electrode 16) and the terminal portion of the counter electrode 6 in the organic EL element 100 are exposed.
- the desired organic EL element 100 is obtained on the film substrate 4.
- the film substrate 4 is taken out from the vacuum atmosphere in the middle to perform different film formation. You may apply the law. At that time, it is necessary to consider that the work is performed in a dry inert gas atmosphere.
- the transparent electrode 2 as an anode has a positive polarity and the counter electrode 6 as a cathode has a negative polarity, and the voltage is about 2 to 40V.
- Luminescence can be observed by applying.
- An alternating voltage may be applied.
- the alternating current waveform to be applied may be arbitrary.
- the preferable aspect of the organic EL element 100 of the present invention described above is that the gas barrier layer 5, the light scattering layer 7, and the smoothing layer 1 are provided between the transparent electrode 2 having both conductivity and light transmittance and the film substrate 4. Is provided. Thereby, the total reflection loss between the transparent electrode 2 and the film board
- the organic EL element 100 has a configuration in which the transparent electrode 2 is used as an anode (anode), and a light emitting unit 3 and a counter electrode 6 serving as a cathode (cathode) are provided thereon.
- the extraction efficiency of the emitted light h from the transparent electrode 2 side is improved while applying a sufficient voltage between the transparent electrode 2 and the counter electrode 6 to realize high luminance light emission in the organic EL element 100. Therefore, it is possible to increase the luminance. Further, it is possible to improve the light emission life by reducing the drive voltage for obtaining a predetermined luminance.
- the organic EL element 100 having each configuration described above is a surface light emitter as described above, it can be used as various light emission sources.
- lighting devices such as home lighting and interior lighting, backlights for clocks and liquid crystals, lighting for billboard advertisements, light sources for traffic lights, light sources for optical storage media, light sources for electrophotographic copying machines, light sources for optical communication processors, Examples thereof include, but are not limited to, a light source of an optical sensor, and can be effectively used as a backlight of a liquid crystal display device combined with a color filter and a light source for illumination.
- the organic EL element 100 of the present invention may be used as a kind of lamp such as an illumination or exposure light source, or a projection device that projects an image, or directly recognizes a still image or a moving image. It may be used as a type of display device (display).
- the light emitting surface may be enlarged by so-called tiling, in which the light emitting panels provided with the organic EL elements 100 are joined together in a plane, in accordance with the recent increase in the size of lighting devices and displays.
- the drive method when used as a display device for moving image reproduction may be either a simple matrix (passive matrix) method or an active matrix method. Moreover, it is possible to produce a color or full-color display device by using two or more kinds of organic EL elements 100 of the present invention having different emission colors.
- a lighting device will be described as an example of the application, and then a lighting device having a light emitting surface enlarged by tiling will be described.
- the organic EL element 100 of the present invention can be applied to a lighting device.
- the lighting device using the organic EL element 100 of the present invention may have a design in which each organic EL element having the above-described configuration has a resonator structure.
- Examples of the purpose of use of the organic EL element 100 configured as a resonator structure include, but are not limited to, a light source of an optical storage medium, a light source of an electrophotographic copying machine, a light source of an optical communication processor, and a light source of an optical sensor. Not. Moreover, you may use for the said use by making a laser oscillation.
- the material used for the organic EL element 100 of the present invention can be applied to an organic EL element that emits substantially white light (also referred to as a white organic EL element).
- a plurality of light emitting materials can simultaneously emit a plurality of light emission colors to obtain white light emission by color mixing.
- the combination of a plurality of emission colors may include three emission maximum wavelengths of the three primary colors of red, green, and blue, or two of the complementary colors such as blue and yellow, blue green and orange, etc. The thing containing the light emission maximum wavelength may be used.
- a combination of light emitting materials for obtaining a plurality of emission colors is a combination of a plurality of phosphorescent or fluorescent materials, a light emitting material that emits fluorescence or phosphorescence, and excitation of light from the light emitting materials. Any combination with a pigment material that emits light as light may be used, but in a white organic EL element, a combination of a plurality of light-emitting dopants may be used.
- Such a white organic EL element is different from a configuration in which organic EL elements emitting each color are individually arranged in parallel to obtain white light emission, and the organic EL element itself emits white light. For this reason, a mask is not required for film formation of most layers constituting the element, and deposition can be performed on one side by vapor deposition, casting, spin coating, ink jet, printing, etc., and productivity is also improved. To do.
- any one of the above-described metal complexes and known light-emitting materials may be selected and combined to be whitened.
- the white organic EL element described above it is possible to produce a lighting device that emits substantially white light.
- the present invention will be specifically described with reference to examples, but the present invention is not limited thereto.
- the display of "part” or “%” is used in an Example, unless otherwise indicated, "part by mass” or “mass%” is represented.
- the average refractive index of the smooth layer 1 is the refractive index of a single material when formed of a single material, and in the case of a mixed system, the refractive index specific to each material is multiplied by the mixing ratio. It is a calculated refractive index calculated by the sum value.
- the binder refractive index of the light scattering layer 7 is the refractive index of a single material when it is formed of a single material, and in the case of a mixed system, the total refractive index of each material multiplied by the mixing ratio. Calculated refractive index calculated by value.
- the particle refractive index of the light scattering layer 7 is the refractive index of a single material when it is formed of a single material, and in the case of a mixed system, the mixing ratio is set to the refractive index specific to each material. It is a calculated refractive index calculated by the summed value.
- the average refractive index of the light-scattering layer 7 is a calculated refractive index calculated by a total value obtained by multiplying the refractive index specific to each material by the mixing ratio.
- total thickness in the table represents the total thickness of the smooth layer 1 and the light scattering layer 7.
- particle diameter of the “light scattering layer” in the table represents the average particle diameter of the particles used in the light scattering layer, and when using a plurality of particles, the average particle diameter of the larger average particle diameter The diameter is shown.
- Sample preparation >> (1) Production of film substrate and gas barrier layer (1-1) Film substrate As a film substrate, a biaxially stretched polyethylene naphthalate film (PEN film, thickness: 100 ⁇ m, width: 350 mm, manufactured by Teijin DuPont Films Ltd., The trade name “Teonex Q65FA”) was used.
- PEN film polyethylene naphthalate film
- the trade name “Teonex Q65FA” was used.
- the surface roughness (arithmetic mean roughness Ra) is an uneven cross section measured continuously with a detector having a stylus having a minimum tip radius using an AFM (Atomic Force Microscope: manufactured by Digital Instruments). It was calculated from the curve, and was measured three times in a section having a measurement direction of 30 ⁇ m with a stylus having a very small tip radius, and was determined from the average roughness regarding the amplitude of fine irregularities.
- first gas barrier layer A film substrate is mounted on a CVD apparatus, and the element profiles shown in FIG. 5 are formed on the film substrate 4 under the following film forming conditions (plasma CVD conditions)
- a first gas barrier layer was prepared with a thickness of 300 nm.
- the first gas barrier layer satisfied the following properties.
- the silicon atom ratio, the oxygen atom ratio, and the carbon atom ratio have the following magnitude relationship in a distance region of 90% or more in the layer thickness direction from the surface of the first gas barrier layer.
- Carbon atom ratio ⁇ (silicon atom ratio) ⁇ (oxygen atom ratio)
- the carbon distribution curve has at least two extreme values.
- the absolute value of the difference between the maximum value and the minimum value of the carbon atom ratio in the carbon distribution curve is 5 at% or more.
- the maximum value of the oxygen distribution curve closest to the surface of the first gas barrier layer on the film substrate side is the maximum among the maximum values of the oxygen distribution curve in the gas barrier layer.
- ⁇ Film forming conditions Feed rate of source gas (hexamethyldisicillozan (HMDSO, (CH 3 ) 6 SiO)): 50 sccm (Standard Cubic Centimeter per Minute) Supply amount of oxygen gas (O 2 ): 500 sccm Degree of vacuum in the vacuum chamber: 3Pa Applied power from the power source for plasma generation: 0.8 kW Frequency of power source for plasma generation: 80 kHz Film transport speed: 0.5 to 1.66 m / min
- Second Gas Barrier Layer A 10 mass% dibutyl ether solution of perhydropolysilazane (Aquamica NN120-10, non-catalytic type, manufactured by AZ Electronic Materials Co., Ltd.) was used as a coating solution.
- the coating solution is applied with a wire bar so that the (average) layer thickness after drying is 300 nm, dried by treatment for 1 minute in an atmosphere at a temperature of 85 ° C. and a humidity of 55% RH, and further at a temperature of 25
- the second gas barrier layer was formed by holding for 10 minutes in an atmosphere of 10 ° C. and humidity of 10% RH (dew point temperature ⁇ 8 ° C.) to perform dehumidification.
- the polysilazane layer formed above was subjected to silica conversion treatment under atmospheric pressure using the following ultraviolet device.
- Excimer lamp light intensity 130 mW / cm 2 (172 nm) Distance between sample and light source: 1mm Stage heating temperature: 70 ° C Oxygen concentration in the irradiation device: 1.0% Excimer lamp irradiation time: 5 seconds The composition or distribution state of the constituent elements of the first gas barrier layer and the second gas barrier layer was different.
- the above-mentioned TiO 2 particles and a solvent are mixed and cooled at room temperature. Dispersion was performed for 10 minutes under the conditions to prepare a TiO 2 dispersion. Next, the resin solution was mixed and added little by little while stirring the TiO 2 dispersion at 100 rpm. After the addition was completed, the stirring speed was increased to 500 rpm and mixed for 10 minutes to obtain a light scattering layer coating solution. Then, it filtered with the hydrophobic PVDF 0.45 micrometer filter (made by Whatman), and obtained the target dispersion liquid.
- the above dispersion was spin-coated on a film substrate by spin coating (500 rpm, 30 seconds), then simply dried (80 ° C., 2 minutes), and further heated (120 ° C., 60 minutes) to obtain a layer thickness of 0
- a light scattering layer of .5 ⁇ m was formed.
- the light scattering layer binder (resin) had a refractive index nb of 1.5, a particle refractive index np of 2.4, and an average refractive index ns of 1.77.
- preparation of the smooth layer 1 was not performed.
- the film substrate obtained in the step (2) above is overlaid with a mask having an opening with a width of 20 mm x 50 mm and fixed to a substrate holder of a commercially available sputtering apparatus, and a vacuum chamber Was reduced to 4 ⁇ 10 ⁇ 4 Pa.
- the substrate was moved to the first vacuum layer, Ar gas was introduced, and surface treatment was performed at RF-100W for 30 seconds.
- the treated substrate is transferred to a second vacuum chamber in which an indium tin oxide (ITO) target is placed in a vacuum, and the second vacuum chamber is depressurized to 4 ⁇ 10 ⁇ 4 Pa. Evaporation was performed for 130 seconds to form an ITO film. In this way, a transparent electrode made of ITO having a pattern of 20 ⁇ 50 mm was produced.
- ITO indium tin oxide
- each layer was formed as follows by sequentially energizing and heating the heating boat containing each material.
- a hole-injecting hole transporting material serving as both a hole-injecting layer and a hole-transporting layer made of ⁇ -NPD is heated by energizing a heating boat containing ⁇ -NPD represented by the following structural formula as a hole-transporting injecting material.
- a layer was deposited on the transparent electrode 2. At this time, the deposition rate was 0.1 to 0.2 nm / second, and the layer thickness was 20 nm.
- an electron transport material composed of D-1 and potassium fluoride is supplied to the heating boat containing D-1 shown in the above structural formula and the heating boat containing potassium fluoride as the electron transporting material independently.
- a heating boat containing potassium fluoride as an electron injection material was energized and heated to form an electron injection layer 3e made of potassium fluoride on the electron transport layer 3d. At this time, the deposition rate was 0.01 to 0.02 nm / second, and the layer thickness was 1 nm.
- the film substrate 4 formed up to the electron injection layer 3e was transferred to a second vacuum chamber equipped with a resistance heating boat made of tungsten containing aluminum (Al) while maintaining a vacuum state. It was fixed by overlapping with a mask having an opening with a width of 20 mm ⁇ 50 mm arranged so as to be orthogonal to the anode.
- a reflective counter electrode 6 made of Al having a layer thickness of 100 nm was formed as a cathode in the processing chamber at a film forming rate of 0.3 to 0.5 nm / second.
- the organic EL element 400 is covered with a sealing material 17 made of a glass substrate having a size of 40 ⁇ 40 mm, a thickness of 700 ⁇ m, and a central portion of 34 ⁇ 34 mm and a depth of 350 ⁇ m.
- An adhesive 19 (sealing material) was filled between the material 17 and the film substrate 4.
- an epoxy photocurable adhesive (Lux Track LC0629B manufactured by Toagosei Co., Ltd.) was used.
- the adhesive 19 filled between the sealing material 17 and the film substrate 4 is irradiated with UV light from the glass substrate (sealing material 17) side to cure the adhesive 19 and seal the organic EL element 400. Stopped.
- the central 2.0 cm ⁇ 2.0 cm of the 5 cm ⁇ 5 cm film substrate 4 is defined as the light emitting region A, and the entire circumference of the light emitting region A.
- a non-light emitting region B having a width of 1.5 cm was provided.
- the transparent electrode 2 serving as the anode (anode) and the counter electrode 6 serving as the cathode (cathode) are insulated by the light emitting unit 3 from the hole injection layer 3a to the electron injection layer 3e.
- the terminal part was formed in the shape pulled out to the periphery.
- the light emitting panel 700 (light emitting panel No. 1) in which the organic EL element 400 was provided on the film substrate 4 and sealed with the sealing material 17 and the adhesive 19 in FIG. .
- Second Gas Barrier Layer A 10% by mass dibutyl ether solution of perhydropolysilazane (Aquamica NN120-10, non-catalytic type, manufactured by AZ Electronic Materials Co., Ltd.) was applied as a coating solution to the wire bar. Then, the dried (average) layer thickness is applied to be 300 nm, treated and dried for 1 minute in an atmosphere of temperature 85 ° C. and humidity 55% RH, and further, temperature 25 ° C., humidity 10% RH (dew point) This was held for 10 minutes in an atmosphere at a temperature of ⁇ 8 ° C. and dehumidified to form a polysilazane layer.
- perhydropolysilazane A 10% by mass dibutyl ether solution of perhydropolysilazane (Aquamica NN120-10, non-catalytic type, manufactured by AZ Electronic Materials Co., Ltd.) was applied as a coating solution to the wire bar. Then, the dried (average) layer thickness is applied
- Excimer lamp light intensity 130 mW / cm 2 (172 nm) Distance between sample and light source: 1mm Stage heating temperature: 70 ° C Oxygen concentration in the irradiation device: 1.0% Excimer lamp irradiation time: 5 seconds The composition or distribution state of the constituent elements of the first gas barrier layer and the second gas barrier layer was different.
- Light-emitting panel No. 2 for the light emitting panel No. 1 is not performed, and the steps (3) to (5) are not performed for the light-emitting panel No. 1. 1 was performed, and a light emitting panel was manufactured.
- a resin solution (ED230AL (organic-inorganic hybrid resin) manufactured by APM) was used in an n-type solvent ratio of 20% by mass / 30% by mass / 50% by mass.
- the formulation was designed in a ratio of 10 ml so that the solid content concentration was 20% by mass in propyl acetate, cyclohexanone and toluene.
- the resin was mixed and added little by little while stirring the solvent at 100 rpm. After the addition was completed, the stirring speed was increased to 500 rpm and mixed for 10 minutes to obtain a smooth layer coating solution.
- the dispersion liquid After spin-coating the dispersion (500 rpm, 30 seconds) onto the light scattering layer, the dispersion is simply dried (80 ° C., 2 minutes) and further heated (120 ° C., 30 minutes) to obtain a layer thickness. A 0.7 ⁇ m smooth layer was formed.
- the average refractive index nf of the smooth layer is irradiated with light having the shortest emission maximum wavelength among the emission maximum wavelengths of the emitted light from the light emitting unit in an atmosphere at 25 ° C., and Abbe refractometer (manufactured by ATAGO, DR-M2) and measured 1.5.
- Ra 5 nm.
- the surface roughness (arithmetic average roughness Ra) is measured using an AFM (Atomic Force Microscope: manufactured by Digital Instruments), as in the case of the base layer, and a detector having a stylus with a minimum tip radius.
- AFM Anamic Force Microscope: manufactured by Digital Instruments
- a detector having a stylus with a minimum tip radius was calculated from the cross-sectional curve of the unevenness measured continuously at, measured three times in a section with a measuring direction of 30 ⁇ m with a stylus having a minimum tip radius, and obtained from the average roughness regarding the amplitude of the fine unevenness.
- the surface roughness (arithmetic average roughness Ra) was similarly determined for all of the following light emitting panels.
- Light-emitting panel No. 3 for the light emitting panel No. A light emitting panel was manufactured in the same manner as in the above (3) to (5).
- the above-mentioned TiO 2 particles and a solvent are mixed and cooled at room temperature, and the standard of the microchip step (SM-3 MSmm 3 mm ⁇ ) is applied to an ultrasonic disperser (SMH UH-50). Dispersion was added for 10 minutes under the conditions to prepare a TiO 2 dispersion. Next, while stirring the TiO 2 dispersion at 100 rpm, the resin was mixed and added little by little. After the addition was completed, the stirring speed was increased to 500 rpm and mixed for 10 minutes to obtain a light scattering layer coating solution. Then, it filtered with the hydrophobic PVDF 0.75 micrometer filter (made by Whatman), and obtained the target dispersion liquid.
- the hydrophobic PVDF 0.75 micrometer filter made by Whatman
- the above dispersion was spin-coated on a film substrate by spin coating (500 rpm, 30 seconds), then simply dried (80 ° C., 2 minutes), and further heated (120 ° C., 60 minutes) to obtain a layer thickness of 0 A light scattering layer of 3 ⁇ m was formed.
- the light scattering layer binder (resin) had a refractive index nb of 1.5, a particle refractive index np of 2.4, and an average refractive index ns of 1.77.
- a resin solution (ED230AL (organic-inorganic hybrid resin) manufactured by APM) was used in an n-type solvent ratio of 20% by mass / 30% by mass / 50% by mass.
- the formulation was designed in a ratio of 10 ml so that the solid concentration would be 9% by mass in propyl acetate, cyclohexanone and toluene.
- the resin was mixed and added little by little while stirring the solvent at 100 rpm. After the addition was completed, the stirring speed was increased to 500 rpm and mixed for 10 minutes to obtain a smooth layer coating solution.
- the dispersion liquid After spin-coating the dispersion (500 rpm, 30 seconds) onto the light scattering layer, the dispersion is simply dried (80 ° C., 2 minutes) and further heated (120 ° C., 30 minutes) to obtain a layer thickness. A smooth layer of 0.3 ⁇ m was formed.
- Light-emitting panel No. 4 for the light emitting panel No. The light emitting panel was manufactured in the same manner as in the manufacturing processes of (3) to (5) of 1.
- the light scattering layer having a layer thickness of 0.5 ⁇ m was formed by performing the treatment (2-1) in the same manner as in 1.
- the light scattering layer binder (resin) had a refractive index nb of 1.5, a particle refractive index np of 2.4, and an average refractive index ns of 1.77.
- the smoothing layer having a layer thickness of 0.7 ⁇ m was formed by performing the treatment (2-2) in the same manner as in FIG.
- Light-emitting panel No. 5 for the light-emitting panel No. The light emitting panel was manufactured in the same manner as in the manufacturing processes of (3) to (5) of 1.
- the above-mentioned TiO 2 particles and a solvent are mixed and cooled at room temperature. Dispersion was performed for 10 minutes under the conditions to prepare a TiO 2 dispersion. Next, the resin solution was mixed and added little by little while stirring the TiO 2 dispersion at 100 rpm. After the addition was completed, the stirring speed was increased to 500 rpm and mixed for 10 minutes to obtain a light scattering layer coating solution. Then, it filtered with the hydrophobic PVDF 0.45 micrometer filter (made by Whatman), and obtained the target dispersion liquid.
- the dispersion was spin-coated on a film substrate by spin coating (500 rpm, 30 seconds), then simply dried (80 ° C., 2 minutes), further heated (120 ° C., 60 minutes), and a layer thickness of 0. A 5 ⁇ m light scattering layer was formed.
- the binder (resin) of the light scattering layer had a refractive index nb of 1.8, a particle refractive index np of 1.5, and an average refractive index ns of 1.77.
- a nano TiO 2 dispersion liquid (HDT-760T manufactured by Teika Co., Ltd.) having an average particle size of 0.02 ⁇ m and a resin solution (ED230AL (organic inorganic) manufactured by APM Co., Ltd.)
- the solid content ratio with the hybrid resin) is 39 vol% / 61 vol%
- the solvent ratio of n-propyl acetate, cyclohexanone and toluene is 20 mass% / 30 mass% / 50 mass%
- the solid content concentration is 20 mass%.
- the formulation was designed at a ratio of 10 ml.
- the nano TiO 2 dispersion and the solvent are mixed, and the resin is mixed and added little by little while stirring at 100 rpm. After the addition is completed, the stirring speed is increased to 500 rpm and mixed for 10 minutes to apply a smooth layer. A liquid was obtained. Then, it filtered with the hydrophobic PVDF 0.45 micrometer filter (made by Whatman), and obtained the target dispersion liquid. After spin-coating the dispersion (500 rpm, 30 seconds) onto the light scattering layer, the dispersion is simply dried (80 ° C., 2 minutes) and further heated (120 ° C., 30 minutes) to obtain a layer thickness. A 0.7 ⁇ m smooth layer was formed.
- Light-emitting panel No. 6 for the light emitting panel No. A light emitting panel was manufactured in the same manner as in steps (3) to (5).
- the formulation was designed at a ratio of 10 ml. Specifically, the above-mentioned TiO 2 particles and a solvent are mixed and cooled at room temperature.
- Dispersion was performed for 10 minutes under the conditions to prepare a TiO 2 dispersion. Next, while stirring the TiO 2 dispersion at 100 rpm, the resin was mixed and added little by little. After the addition was completed, the stirring speed was increased to 500 rpm and mixed for 10 minutes to obtain a light scattering layer coating solution. Then, it filtered with the hydrophobic PVDF 0.45 micrometer filter (made by Whatman), and obtained the target dispersion liquid. The above dispersion was spin-coated on a film substrate by spin coating (500 rpm, 30 seconds), then simply dried (80 ° C., 2 minutes), and further heated (120 ° C., 60 minutes) to obtain a layer thickness of 0 A light scattering layer of .5 ⁇ m was formed.
- the refractive index nb of the binder (resin) of the light scattering layer was 1.7
- the particle refractive index np was 2.4
- the average refractive index ns was 1.77.
- (2-2) Preparation of smooth layer 7 for the light emitting panel no.
- the smooth layer having a layer thickness of 0.7 ⁇ m was formed in the same manner as in the above step (2-2).
- a light emitting panel was manufactured in the same manner as in steps (3) to (5).
- Light Emitting Panel No. 8 Example (1) Production of film substrate and gas barrier layer For light-emitting panel No. 8, the light-emitting panel no. Using the same film substrate as in FIG. The manufacturing steps (1-1) to (1-4) of No. 2 were performed in the same manner.
- the light-scattering layer having a layer thickness of 0.5 ⁇ m was formed by performing the manufacturing process (2-1) in the same manner as in 1.
- the light scattering layer binder (resin) had a refractive index nb of 1.5, a particle refractive index np of 2.4, and an average refractive index ns of 1.77.
- Light-emitting panel No. 8 the light-emitting panel no. A light emitting panel was manufactured in the same manner as in steps (3) to (5).
- the light-scattering layer having a layer thickness of 0.5 ⁇ m was formed by performing the manufacturing process (2-1) in the same manner as in 1.
- the light scattering layer binder (resin) had a refractive index nb of 1.5, a particle refractive index np of 2.4, and an average refractive index ns of 1.77.
- Light-emitting panel No. 9 the light-emitting panel no. A light emitting panel was manufactured in the same manner as in steps (3) to (5).
- the above-mentioned TiO 2 particles and a solvent are mixed and cooled at room temperature, and the standard of the microchip step (SM-3 MSmm 3 mm ⁇ ) is applied to an ultrasonic disperser (SMH UH-50). Dispersion was added for 10 minutes under the conditions to prepare a TiO 2 dispersion. Next, while stirring the TiO 2 dispersion at 100 rpm, the resin was mixed and added little by little. After the addition was completed, the stirring speed was increased to 500 rpm and mixed for 10 minutes to obtain a light scattering layer coating solution. Then, it filtered with the hydrophobic PVDF 0.45 micrometer filter (made by Whatman), and obtained the target dispersion liquid.
- the hydrophobic PVDF 0.45 micrometer filter made by Whatman
- the dispersion was spin-coated on a film substrate by spin coating (1500 rpm, 30 seconds), then simply dried (80 ° C., 2 minutes), and further heated (120 ° C., 60 minutes) to obtain a layer thickness of 0 A light scattering layer of 3 ⁇ m was formed.
- the light scattering layer binder (resin) had a refractive index nb of 1.5, a particle refractive index np of 2.4, and an average refractive index ns of 1.77.
- Production of light scattering layer and smooth layer (2-1) Production of light scattering layer No. 11 is a light emitting panel no.
- the light scattering layer having a layer thickness of 0.5 ⁇ m was formed by performing the treatment (2-1) in the same manner as in 1.
- the light scattering layer binder (resin) had a refractive index nb of 1.5, a particle refractive index np of 2.4, and an average refractive index ns of 1.77.
- the stirring speed is increased to 500 rpm and mixed for 10 minutes to apply a smooth layer.
- a liquid was obtained.
- it filtered with the hydrophobic PVDF 0.45 micrometer filter (made by Whatman), and obtained the target dispersion liquid.
- the dispersion is simply dried (80 ° C., 2 minutes) and further heated (120 ° C., 30 minutes) to obtain a layer thickness.
- a 0.7 ⁇ m smooth layer was formed.
- Light-emitting panel No. No. 11 is a light emitting panel no. The light emitting panel was manufactured in the same manner as in the manufacturing processes of (3) to (5) of 1.
- the formulation was designed at a ratio of 10 ml. Specifically, the above-mentioned TiO 2 particles and a solvent are mixed and cooled at room temperature. Dispersion was performed for 10 minutes under the conditions to prepare a TiO 2 dispersion. Next, while stirring the TiO 2 dispersion at 100 rpm, the resin was mixed and added little by little. After the addition was completed, the stirring speed was increased to 500 rpm and mixed for 10 minutes to obtain a light scattering layer coating solution. Then, it filtered with the hydrophobic PVDF 0.45 micrometer filter (made by Whatman), and obtained the target dispersion liquid.
- the above dispersion was spin-coated on a film substrate by spin coating (500 rpm, 30 seconds), then simply dried (80 ° C., 2 minutes), and further heated (120 ° C., 60 minutes) to obtain a layer thickness of 0
- a light scattering layer of .5 ⁇ m was formed.
- the binder (resin) of the light scattering layer had a refractive index nb of 1.5, a particle refractive index np of 1.7, and an average refractive index ns of 1.56.
- the formulation was designed at a ratio of 10 ml. Specifically, the above-mentioned TiO 2 particles and a solvent are mixed and cooled at room temperature. Dispersion was performed for 10 minutes under the conditions to prepare a TiO 2 dispersion. Next, while stirring the TiO 2 dispersion at 100 rpm, the resin was mixed and added little by little. After the addition was completed, the stirring speed was increased to 500 rpm and mixed for 10 minutes to obtain a light scattering layer coating solution. Then, it filtered with the hydrophobic PVDF 0.45 micrometer filter (made by Whatman), and obtained the target dispersion liquid.
- the above dispersion was spin-coated on a film substrate by spin coating (500 rpm, 30 seconds), then simply dried (80 ° C., 2 minutes), and further heated (120 ° C., 60 minutes) to obtain a layer thickness of 0
- a light scattering layer of .5 ⁇ m was formed.
- the binder (resin) of the light scattering layer had a refractive index nb of 1.5, a particle refractive index np of 1.7, and an average refractive index ns of 1.6.
- Example 2 (6) Evaluation The obtained light emitting panel (lighting device) No. The following evaluation was performed using 1 to 13.
- the light emitting panel No. which is an example of the present invention. 3 is a comparative light-emitting panel No. 3. It was found that the ratio of short-circuiting was lower than that of 1 and 2.
- Each of the light emitting panels including 4 to 13 was found to be superior to the comparative example in all the luminous fluxes and the energization tests.
- the organic electroluminescence device of the present invention suppresses deterioration of storage stability and occurrence of short-circuits in a high-temperature and high-humidity atmosphere caused by unevenness on the surface of the gas barrier layer or light scattering layer in contact with the light-emitting unit, and emits light.
- An organic EL element with improved efficiency can be obtained.
- the organic EL element can be used for display devices, displays, home lighting, interior lighting, backlights for clocks and liquid crystals, signboard advertisements, traffic lights, and optical storage media.
- the light source, the light source of the electrophotographic copying machine, the light source of the optical communication processor, the light source of the optical sensor, and further, can be suitably used as a wide light emission source of general household appliances that require a display device.
- Organic electroluminescence device (organic EL device) 1 Smooth layer 2 Anode (transparent electrode) 2a Underlayer 2b Electrode layer 3 Light emitting unit 4 Film substrate 5 Gas barrier layer 6 Cathode (counter electrode) 7 Light scattering layer 700 Lighting device (light emitting panel)
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
ガスバリアー性が劣る基板を用いると、水蒸気や酸素が浸透してしまい、例えば、電子デバイス内の機能を劣化させてしまうという問題があることが分かっている。
1.フィルム基板上に、少なくとも、ガスバリアー層、平滑層及び一対の電極に挟持された有機機能層を有する発光ユニットが、この順に、積層された有機エレクトロルミネッセンス素子であって、前記ガスバリアー層が、構成元素の組成又は分布状態が相違する少なくとも2種のガスバリアー層で構成されていることを特徴とする有機エレクトロルミネッセンス素子。
本発明の効果の発現機構ないし作用機構については、明確になっていないが、以下のように推察している。
本発明の有機エレクトロルミネッセンス素子(以下、有機EL素子ともいう。)は、フィルム基板上に、少なくとも、ガスバリアー層、平滑層及び一対の電極に挟持された有機機能層を有する発光ユニットが、この順に、積層された有機EL素子であって、ガスバリアー層が、構成元素の組成又は分布状態が相違する少なくとも2種のガスバリアー層で構成されている。
本願において、「発光ユニット」とは、少なくとも、後述する各種有機化合物を含有する、発光層、正孔輸送層、電子輸送層等の有機機能層を主体として構成される発光体(単位)をいう。当該発光体は、陽極と陰極からなる一対の電極の間に挟持されており、当該陽極から供給される正孔(ホール)と陰極から供給される電子が当該発光体内で再結合することにより発光する。
なお、本発明の有機エレクトロルミネッセンス素子は、所望の発光色に応じて、当該発光ユニットを複数備えていてもよい。
具体的には、図1に示すとおり、本発明にかかる有機EL素子100は、フィルム基板4上に設けられており、フィルム基板4側から順に、ガスバリアー層5、光散乱層7、平滑層1、陽極(透明電極)2、有機材料等を用いて構成された発光ユニット3及び陰極(対向電極)6を有していることが好ましく、この順に積層していることが好ましい態様である。光散乱層7は、本発明の有機EL素子に備えられることが好ましいが、必須の構成要素ではない。透明電極2(電極層2b)の端部には、取り出し電極16が設けられている。透明電極2と外部電源(図示略)とは、取り出し電極16を介して、電気的に接続される。有機EL素子100は、発生させた光(発光光h)を、少なくともフィルム基板4側から取り出すように構成されている。
本発明に係る平滑層1は、ガスバリアー層5又は光散乱層7の上に発光ユニット3を設けた場合、当該ガスバリアー層5又は光散乱層7の表面の凹凸に起因する高温・高湿雰囲気下での保存性の劣化や電気的短絡(ショート)等の弊害を防止することを主目的とするものである。
本発明に係る平滑層1は、この上に透明電極2を良好に形成させる平坦性を有することが重要であり、その表面性は、算術平均粗さRaが0.5~50nmの範囲内であることが好ましい。更に好ましくは30nm以下、特に好ましくは10nm以下、最も好ましくは5nm以下である。算術平均粗さRaを0.5~50nmの範囲内とすることで、積層する有機EL素子のショート等の不良を抑制することができる。なお、算術平均粗さRaについては、0nmが好ましいが実用レベルの限界値として0.5nmを下限値とする。
また、本願において、表面の算術平均粗さRaとは、JIS B0601-2001に準拠した算術平均粗さを表している。
なお、表面粗さ(算術平均粗さRa)は、AFM(原子間力顕微鏡 Atomic Force Microscope:Digital Instruments社製)を用い、極小の先端半径の触針を持つ検出器で連続測定した凹凸の断面曲線から算出され、極小の先端半径の触針により測定方向が30μmの区間内を3回測定し、微細な凹凸の振幅に関する平均の粗さから求めた。
ここで、「平均屈折率nf」とは、単独の素材で形成されている場合は、単独の素材の屈折率であり、混合系の場合は、各々の素材固有の屈折率に混合比率を乗じた合算値により算出される計算屈折率である。
バインダー樹脂として用いられるポリマーは、1種類を単独で用いてもよいし、必要に応じて2種類以上を混合して使用してもよい。
このようなバインダー樹脂としては、飽和炭化水素又はポリエーテルを主鎖として有するポリマーであることが好ましく、飽和炭化水素を主鎖として有するポリマーであることがより好ましい。
また、バインダーは架橋していることが好ましい。飽和炭化水素を主鎖として有するポリマーは、エチレン性不飽和モノマーの重合反応により得ることが好ましい。架橋しているバインダーを得るためには、二つ以上のエチレン性不飽和基を有するモノマーを用いることが好ましい。
本発明の有機EL素子100では、光散乱層7を備えることが好ましい。光散乱層の平均屈折率nsは、発光ユニット3の有機機能層における発光光が平滑層1を通って入射するため、屈折率が有機機能層及び平滑層1とできるだけ近い方がよい。光散乱層7は、発光ユニット3からの発光光の発光極大波長のうち最も短い発光極大波長において、平均屈折率nsが1.5以上、特に1.6以上、2.5未満の範囲内である高屈折率層であることが好ましい。この場合、光散乱層7は、平均屈折率ns1.6以上2.5未満を有する単独の素材で膜を形成してもよいし、2種類以上の化合物と混合して平均屈折率ns1.6以上2.5未満の膜を形成してもよい。このような混合系の場合、光散乱層7の平均屈折率nsは、各々の素材固有の屈折率に混合比率を乗じた合算値により算出される計算屈折率を用いる。また、この場合、各々の素材の屈折率は、1.6未満若しくは2.5以上であってもよく、混合した膜の平均屈折率nsとして1.6以上2.5未満を満たしていればよい。
ここで、「平均屈折率ns」とは、単独の素材で形成されている場合は、単独の素材の屈折率であり、混合系の場合は、各々の素材固有の屈折率に混合比率を乗じた合算値により算出される計算屈折率である。
ここで、「バインダーの屈折率nb」とは、単独の素材で形成されている場合は、単独の素材の屈折率であり、混合系の場合は、各々の素材固有の屈折率に混合比率を乗じた合算値により算出される計算屈折率である。
ここで、「粒子の屈折率np」とは、単独の素材で形成されている場合は、単独の素材の屈折率であり、混合系の場合は、各々の素材固有の屈折率に混合比率を乗じた合算値により算出される計算屈折率である。
ここで、散乱とは、光散乱層単膜でヘイズ値(全光線透過率に対する散乱透過率の割合)が、20%以上、より好ましくは25%以上、特に好ましくは30%以上を示す状態を表す。ヘイズ値が20%以上であれば、発光効率を向上させることができる。
ヘイズ値とは、(a)膜中の組成物の屈折率差による影響と、(b)表面形状による影響とを受けて算出される物性値である。すなわち、表面粗さを一定程度未満に抑えてヘイズ値を測定することにより、上記(b)による影響を排除したヘイズ値が測定されることとなる。具体的には、ヘーズメーター(日本電色工業(株)製、NDH-5000)等を用いて測定することができる。
例えば、粒子径を調整することにより、散乱性を向上させることができ、ショート等の不良を抑制することができる。具体的には、可視光域のMie散乱を生じさせる領域以上の粒子径を有する透明な粒子であることが好ましい。また、その平均粒子径は0.2μm以上であることが好ましい。
一方、平均粒子径の上限としては、粒子径がより大きい場合、粒子を含有した光散乱層7の粗さを平坦化する平滑層1の層厚も厚くする必要があり、工程の負荷、膜の吸収の観点で不利な点があることから、好ましくは10μm未満、より好ましくは5μm未満、特に好ましくは3μm未満、最も好ましくは1μm未満である。
また、光散乱層7に複数の種類の粒子を用いる場合、平均粒子径は、100nm~3μmの範囲内のものを少なくとも1種含み、かつ3μm以上のものを含まないことが好ましく、特に、200nm~1μmの範囲内のものを少なくとも1種含み、かつ1μm以上のものを含まないことが好ましい。
ここで、高屈折率粒子の平均粒子径は、例えば、日機装社製ナノトラックUPA-EX150といった動的光散乱法を利用した装置や、電子顕微鏡写真の画像処理により測定することができる。
これらの粒子は、実際には、多分散粒子であることや規則的に配置することが難しいことから、局部的には回折効果を有するものの、多くは拡散により光の方向を変化させ光取り出し効率を向上させる。
具体的には、Si-O-Si結合を有するポリシロキサン(ポリシルセスキオキサンを含む)、Si-N-Si結合を有するポリシラザン、Si-O-Si結合とSi-N-Si結合の両方を含むポリシロキサザン等を挙げることができる。これらは、2種以上を混合して使用することができる。また、異なる化合物を逐次積層したり、同時積層したりしても使用可能である。
光散乱層7の厚さは、散乱を生じるための光路長を確保するためにある程度厚い必要があるが、一方吸収によるエネルギーロスを生じない程度に薄い必要がある。具体的には0.1~5μmの範囲内が好ましく、0.2~2μmの範囲内が更に好ましい。
光散乱層7で用いられるポリシロキサンとしては、一般構造単位としての〔R3SiO1/2〕、〔R2SiO〕、〔RSiO3/2〕及び〔SiO2〕を含むことができる。ここで、Rは、水素原子、1~20の炭素原子を含むアルキル基(例えば、メチル、エチル、プロピル等)、アリール基(例えば、フェニル等)、不飽和アルキル基(例えば、ビニル等)からなる群より独立して選択される。特定のポリシロキサン基の例としては、〔PhSiO3/2〕、〔MeSiO3/2〕、〔HSiO3/2〕、〔MePhSiO〕、〔Ph2SiO〕、〔PhViSiO〕、〔ViSiO3/2〕(Viはビニル基を表す。)、〔MeHSiO〕、〔MeViSiO〕、〔Me2SiO〕、〔Me3SiO1/2〕等が挙げられる。また、ポリシロキサンの混合物やコポリマーも使用可能である。
光散乱層7においては、上述のポリシロキサンの中でもポリシルセスキオキサンを用いることが好ましい。ポリシルセスキオキサンは、シルセスキオキサンを構造単位に含む化合物である。「シルセスキオキサン」とは、〔RSiO3/2〕で表される化合物であり、通常、RSiX3(Rは、水素原子、アルキル基、アルケニル基、アリール基、アラアルキル基(アラルキル基ともいう)等であり、Xは、ハロゲン、アルコキシ基等である。)型化合物が加水分解-重縮合して合成されるポリシロキサンである。ポリシルセスキオキサンの分子配列の形状としては、代表的には無定形構造、ラダー状構造、籠型構造、その部分開裂構造体(籠型構造からケイ素原子が一原子欠けた構造や籠型構造のケイ素-酸素結合が一部切断された構造)等が知られている。
光散乱層7で用いられるポリシラザンとは、ケイ素-窒素結合を持つポリマーで、Si-N、Si-H、N-H等からなるSiO2、Si3N4及び両方の中間固溶体SiOxNy(x:0.1~1.9、y:0.1~1.3)等の無機前駆体ポリマーである。
本発明に係る「ポリシラザン」とは、構造内にケイ素-窒素結合を持つポリマーで、酸窒化ケイ素の前駆体となるポリマーであり、下記の一般式(A)構造を有するものが好ましく用いられる。
例えば、電子線硬化の場合には、コックロフワルトン型、バンデグラフ型、共振変圧型、絶縁コア変圧器型、直線型、ダイナミトロン型、高周波型等の各種電子線加速器から放出される10~1000keV、好ましくは30~300keVのエネルギーを有する電子線等が使用され、紫外線硬化の場合には、超高圧水銀灯、高圧水銀灯、低圧水銀灯、カーボンアーク、キセノンアーク、メタルハライドランプ等の光線から発する紫外線等が利用できる。
本発明にかかる好ましい紫外線照射装置としては、具体的には、100~230nmの範囲内で真空紫外線を発する希ガスエキシマランプが挙げられる。
Xe、Kr、Ar、Ne等の希ガスの原子は、化学的に結合して分子を作らないため、不活性ガスと呼ばれる。しかし、放電などによりエネルギーを得た希ガスの原子(励起原子)は、他の原子と結合して分子を作ることができる。
例えば、希ガスがXe(キセノン)の場合には、下記反応式で示されるように、励起されたエキシマ分子であるXe2 *が基底状態に遷移するときに、172nmのエキシマ光を発光する。
Xe*+2Xe→Xe2 *+Xe
Xe2 *→Xe+Xe+hν(172nm)
誘電体バリアー放電ランプの構成としては、電極間に誘電体を介して放電を起こすものであり、一般的には、誘電体からなる放電容器とその外部とに少なくとも一方の電極が配置されていればよい。誘電体バリアー放電ランプとして、例えば、石英ガラスで構成された太い管と細い管とからなる二重円筒状の放電容器中にキセノン等の希ガスが封入され、該放電容器の外部に網状の第1の電極を設け、内管の内側に他の電極を設けたものがある。誘電体バリアー放電ランプは、電極間に高周波電圧等を加えることによって放電容器内部に誘電体バリアー放電を発生させ、該放電により生成されたキセノン等のエキシマ分子が解離する際にエキシマ光を発生させる。
本発明に係るガスバリアー層は、構成元素の組成又は分布状態が相違する少なくとも2種のガスバリアー層で構成されていることを特徴とする。このような構成にすることにより、酸素や水蒸気の透過を効率良く防止することができる。
ガスバリアー層は、JIS K 7129-1992に準拠した方法で測定された水蒸気透過度(25±0.5℃、相対湿度90±2%RH)が、0.01g/m2・24h以下のバリアー性フィルム(バリア膜等ともいう)であることが好ましい。また、さらには、JIS K 7126-1987に準拠した方法で測定された酸素透過度が、1×10-3ml/m2・24h・atm以下、水蒸気透過度が、1×10-5g/m2・24h以下の高バリアー性フィルムであることが好ましい。
なお、ガスバリアー層を構成する元素の当該ガスバリアー層内における組成又は分布状態は、均一であっても、厚さ方向で異なっていてもよい。構成元素の組成又は分布状態が相違するようにする方法としては、後述するように、ガスバリアー層の形成方法や形成材料を相違させることが好ましい。
本発明に係る第1ガスバリアー層の構成元素としては、少なくとも、酸素や水蒸気の透過を防止する化合物を構成する元素を含み、後述する第2ガスバリアー層の構成元素と相違していればよい。
例えば、第1ガスバリアー層5aは、フィルム基板の一方の面にケイ素、酸素及び炭素を構成元素として含有する層として設けることができる。この場合、当該第1ガスバリアー層5aについてのX線光電子分光法による深さ方向の元素分布測定に基づく各構成元素の分布曲線において、下記要件(i)~(iv)を全て満たす態様とすることが、ガスバリアー性を向上させる観点から好ましい。
(i)ケイ素原子比率、酸素原子比率及び炭素原子比率が、前記第1ガスバリアー層5aの表面から層厚方向の90%以上の距離領域において、下記序列の大小関係を有する。
(炭素原子比率)<(ケイ素原子比率)<(酸素原子比率)
(ii)炭素分布曲線が少なくとも二つの極値を有する。
(iii)炭素分布曲線における炭素原子比率の最大値及び最小値の差の絶対値が5at%以上である。
(iv)酸素分布曲線において、フィルム基板側の第1ガスバリアー層5a表面に最も近い酸素分布曲線の極大値が、当該ガスバリアー層5内の酸素分布曲線の極大値の中で最大値をとる。
本発明に係る第1ガスバリアー層5aは、帯状の可撓性を有するフィルム基板を用いて、当該フィルム基板を一対の成膜ローラー間に接触しながら搬送し、当該一対の成膜ローラー間に成膜ガスを供給しながらプラズマ放電を行うプラズマ化学気相成長法によって、前記フィルム基板上に形成する薄膜層であることが好ましい。
なお、本発明において前記極値とは、第1ガスバリアー層5aの層厚方向における当該第1ガスバリアー層5aの表面からの距離に対する各元素の原子比率の極大値又は極小値のことをいう。
本発明において極大値とは、第1ガスバリアー層5aの表面からの距離を変化させた場合に元素の原子比率の値が増加から減少に変わる点であって、かつその点の元素の原子比率の値よりも、当該点から第1ガスバリアー層5aの層厚方向における第1ガスバリアー層5aの表面からの距離を更に20nm変化させた位置の元素の原子比率の値が3at%以上減少する点のことをいう。
本発明に係る第1ガスバリアー層5a内の炭素原子比率は、層全体の平均値として8~20at%の範囲内であることが、屈曲性の観点から好ましい。より好ましくは10~20at%の範囲内である。当該範囲内にすることにより、ガスバリアー性と屈曲性を十分に満たす第1ガスバリアー層5aを形成することができる。
本発明においては、前記したようにフィルム基板側からの水分子の侵入を防止する観点から、第1ガスバリアー層5aの酸素分布曲線において、フィルム基板側の第1ガスバリアー層5a表面に最も近い酸素分布曲線の極大値が、第1ガスバリアー層5a内の酸素分布曲線の極大値の中で最大値をとることが好ましい。
本発明においては、前記第1ガスバリアー層5aのケイ素分布曲線における、ケイ素原子比率の最大値及び最小値の差の絶対値が5at%未満であることが好ましく、4at%未満であることがより好ましく、3at%未満であることが特に好ましい。前記絶対値が前記範囲内であれば、得られる第1ガスバリアー層5aのガスバリアー性及びガスバリアー層の機械的強度が十分となる。
ガスバリアー層5の層厚(深さ)方向における炭素分布曲線、酸素分布曲線及びケイ素分布曲線は、X線光電子分光法(XPS:Xray Photoelectron Spectroscopy)の測定とアルゴン等の希ガスイオンスパッタとを併用することにより、試料内部を露出させつつ順次表面組成分析を行う、いわゆるXPSデプスプロファイル(深さ方向の分布)測定により作成することができる。このようなXPSデプスプロファイル測定により得られる分布曲線は、例えば、縦軸を各元素の原子比率(単位:at%)とし、横軸をエッチング時間(スパッタ時間)として作成することができる。
なお、このように横軸をエッチング時間とする元素の分布曲線においては、エッチング時間は層厚方向における前記ガスバリアー層5の層厚方向における前記ガスバリアー層5の表面からの距離におおむね相関することから、「ガスバリアー層の層厚方向におけるガスバリアー層の表面からの距離」として、XPSデプスプロファイル測定の際に採用したエッチング速度とエッチング時間との関係から算出されるガスバリアー層5の表面からの距離を採用することができる。
また、このようなXPSデプスプロファイル測定に際して採用するスパッタ法としては、エッチングイオン種としてアルゴン(Ar+)を用いた希ガスイオンスパッタ法を採用し、そのエッチング速度(エッチングレート)を0.05nm/sec(SiO2熱酸化膜換算値)とすることが好ましい。
本明細書において、ガスバリアー層5が表面方向において実質的に一様とは、XPSデプスプロファイル測定によりガスバリアー層5の表面の任意の2箇所の測定箇所について前記酸素分布曲線、前記炭素分布曲線を作成した場合に、その任意の2箇所の測定箇所において得られる炭素分布曲線が持つ極値の数が同じであり、それぞれの炭素分布曲線における炭素の原子比率の最大値及び最小値の差の絶対値が、互いに同じであるか若しくは5at%以内の差であることをいう。
さらに、このようなガスバリアー層5を2層以上備える場合には、複数のガスバリアー層5の材質は、同一であってもよく、異なっていてもよい。また、このようなガスバリアー層5を2層以上備える場合には、このようなガスバリアー層5は前記フィルム基板4の一方の表面上に形成されていてもよく、前記フィルム基板4の両方の表面上に形成されていてもよい。
前記第1ガスバリアー層5aの厚さは、5~3000nmの範囲であることが好ましく、10~2000nmの範囲であることより好ましく、100~1000nmの範囲であることが更に好ましく、300~1000nmの範囲が特に好ましい。第1ガスバリアー層5aの厚さが前記範囲内であれば、酸素ガスバリアー性、水蒸気バリアー性等のガスバリアー性に優れ、屈曲によるガスバリアー性の低下がみられない。
本発明に係る第1ガスバリアー層5aは、プラズマ化学気相成長法により形成される層であることが好ましい。より詳しくはこのようなプラズマ化学気相成長法により形成される第1ガスバリアー層として、前記フィルム基板4を前記一対の成膜ローラーに接触しながら搬送し、前記一対の成膜ローラー間に成膜ガスを供給しながらプラズマ放電してプラズマ化学気相成長法により形成される層であることが好ましい。
また、このようにして一対の成膜ローラー間に放電する際には、前記一対の成膜ローラーの極性を交互に反転させることが好ましい。更に、このようなプラズマ化学気相成長法に用いる前記成膜ガスとしては有機ケイ素化合物と酸素とを含むものが好ましく、供給する成膜ガス中の酸素の含有量は、前記成膜ガス中の前記有機ケイ素化合物の全量を完全酸化するのに必要な理論酸素量以下であることが好ましい。また、本発明においては、前記第1ガスバリアー層5aがフィルム基板4上に連続的な成膜プロセスにより形成された層であることが好ましい。
このようにして、一対の成膜ローラーを用い、その一対の成膜ローラー上にフィルム基板4を接触しながら搬送し、かかる一対の成膜ローラー間にプラズマ放電することにより、フィルム基板4と成膜ローラー間のプラズマ放電位置との距離が変化することによって、前記炭素原子比率が濃度勾配を有し、かつ層内で連続的に変化するようなガスバリアー層5を形成することが可能となる。
また、このような製造装置においては、少なくとも成膜ローラー31、32と、ガス供給口41と、プラズマ発生用電源51と、永久磁石からなる磁場発生装置61及び62とが図示を省略した真空チャンバー内に配置されている。更に、このような製造装置において前記真空チャンバーは図示を省略した真空ポンプに接続されており、かかる真空ポンプにより真空チャンバー内の圧力を適宜調整することが可能となっている。
なお、このように、成膜ローラー31と成膜ローラー32を電極としても利用する場合には、電極としても利用可能なようにその材質や設計を適宜変更すればよい。また、このような製造装置においては、一対の成膜ローラー(成膜ローラー31及び32)は、その中心軸が同一平面上においてほぼ平行となるようにして配置することが好ましい。このようにして、一対の成膜ローラー(成膜ローラー31及び32)を配置することにより、成膜レートを倍にでき、なおかつ、同じ構造の膜を成膜できるので前記炭素分布曲線における極値を少なくとも倍増させることが可能となる。
このようなプラズマ発生用電源51としては、より効率よくプラズマCVD法を実施することが可能となることから、前記一対の成膜ローラーの極性を交互に反転させることが可能なもの(交流電源など)を利用することが好ましい。
また、このようなプラズマ発生用電源51としては、より効率よくプラズマCVD法を実施することが可能となることから、印加電力を100W~10kWの範囲とすることができ、かつ交流の周波数を50Hz~500kHzの範囲とすることが可能なものであることがより好ましい。また、磁場発生装置61及び62としては適宜公知の磁場発生装置を用いることができる。
すなわち、図2に示す製造装置を用いて、成膜ガス(原料ガス等)を真空チャンバー内に供給しつつ、一対の成膜ローラー(成膜ローラー31及び32)間にプラズマ放電を発生させることにより、前記成膜ガス(原料ガス等)がプラズマによって分解され、成膜ローラー31上のフィルム基板4の表面上並びに成膜ローラー32上のフィルム基板4の表面上に、前記ガスバリアー層5がプラズマCVD法により形成される。なお、このような成膜に際しては、フィルム基板4が送り出しローラー11や成膜ローラー31等により、それぞれ搬送されることにより、ロールtoロール方式の連続的な成膜プロセスによりフィルム基板4の表面上に前記第1ガスバリアー層5aが形成される。
また、本発明に係る酸素原子比率としては、前記フィルム基板4側の第1ガスバリアー層5a表面に最も近い酸素分布曲線の極大値となる酸素原子比率が、フィルム基板4とはガスバリアー層5を挟み反対側のガスバリアー層5表面に最も近い当該酸素分布曲線の極大値となる酸素原子比率の1.05倍以上となることが好ましい。
すなわち、成膜ローラー31及び32を結ぶ線分の垂直二等分線m上の点pから、t1又はt2の方向に、(t1-p)間の距離、又は(t2-p)間の距離を100%としたときに、点pの位置から5~20%の範囲内で成膜ローラー側に平行移動的に近づけることを意味する。
本発明に係る第1ガスバリアー層5aの形成に用いる前記成膜ガス中の原料ガスとしては、形成するガスバリアー層5の材質に応じて適宜選択して使用することができる。このような原料ガスとしては、例えばケイ素を含有する有機ケイ素化合物を用いることが好ましい。
このような有機ケイ素化合物としては、例えば、ヘキサメチルジシロキサン、1,1,3,3-テトラメチルジシロキサン、ビニルトリメチルシラン、メチルトリメチルシラン、ヘキサメチルジシラン、メチルシラン、ジメチルシラン、トリメチルシラン、ジエチルシラン、プロピルシラン、フェニルシラン、ビニルトリエトキシシラン、ビニルトリメトキシシラン、テトラメトキシシラン、テトラエトキシシラン、フェニルトリメトキシシラン、メチルトリエトキシシラン、オクタメチルシクロテトラシロキサン等が挙げられる。
これらの有機ケイ素化合物の中でも、成膜での取扱い及び得られるガスバリアー層5のガスバリアー性等の特性の観点から、ヘキサメチルジシロキサン、1,1,3,3-テトラメチルジシロキサンが好ましい。また、これらの有機ケイ素化合物は、1種を単独で又は2種以上を組み合わせて使用することができる。
酸化物を形成するための反応ガスとしては、例えば、酸素、オゾンを用いることができる。また、窒化物を形成するための反応ガスとしては、例えば、窒素、アンモニアを用いることができる。
これらの反応ガスは、1種を単独で又は2種以上を組み合わせて使用することができ、例えば酸窒化物を形成する場合には、酸化物を形成するための反応ガスと窒化物を形成するための反応ガスとを組み合わせて使用することができる。
(CH3)6Si2O+12O2→6CO2+9H2O+2SiO2 (1)
このような反応においては、ヘキサメチルジシロキサン1モルを完全酸化するのに必要な酸素量は12モルである。そのため、成膜ガス中に、ヘキサメチルジシロキサン1モルに対して酸素を12モル以上含有させて完全に反応させた場合には、均一な二酸化ケイ素膜が形成されてしまうため、原料のガス流量比を理論比である完全反応の原料比以下の流量に制御して、非完全反応を遂行させる。つまりヘキサメチルジシロキサン1モルに対して酸素量を化学量論比の12モルより少なくする必要がある。
このような比でヘキサメチルジシロキサン及び酸素を含有させることにより、完全に酸化されなかったヘキサメチルジシロキサン中の炭素原子や水素原子がガスバリアー層5中に取り込まれ、所望したガスバリアー層5を形成することが可能となって、得られるガスバリアーフィルムに優れたバリアー性及び耐屈曲性を発揮させることが可能となる。
また、成膜ガス中のヘキサメチルジシロキサンのモル量(流量)に対する酸素のモル量(流量)の下限は、ヘキサメチルジシロキサンのモル量(流量)の0.1倍より多い量とすることが好ましく、0.5倍より多い量とすることがより好ましい。
真空チャンバー内の圧力(真空度)は、原料ガスの種類等に応じて適宜調整することができるが、0.5~100Paの範囲とすることが好ましい。
このようなプラズマCVD法において、成膜ローラー31及び32間に放電するために、プラズマ発生用電源51に接続された電極ドラム(本実施形態においては成膜ローラー31及び32に設置されている。)に印加する電力は、原料ガスの種類や真空チャンバー内の圧力等に応じて適宜調整することができるものであり一概に言えるものでないが、0.1~10kWの範囲とすることが好ましい。
このような範囲の印加電力であれば、パーティクルの発生も見られず、成膜時に発生する熱量も制御内であるため、成膜時のフィルム基板4表面の温度上昇による、フィルム基板4の熱負けや成膜時の皺の発生もない。また、熱でフィルム基板4が溶けて、裸の成膜ローラー間に大電流の放電が発生して成膜ローラー自体を傷めてしまう可能性も小さい。
本発明に係るガスバリアー層は、構成元素の組成又は分布状態が相違する少なくとも2種のガスバリアー層で構成されていることを特徴とする。
本発明において、本発明に係る第1のガスバリアー層の上に、塗布方式のポリシラザン含有液の塗膜を設け、波長200nm以下の真空紫外光(VUV光)を照射して改質処理することにより形成された第2のガスバリアー層を設けることが好ましい。上記第2のガスバリアー層をCVD法で設けたガスバリアー層の上に設けることにより、ガスバリアー層に残存する微小な欠陥を、上部からポリシラザンのガスバリアー成分で埋めることができ、更なるガスバリアー性と屈曲性を向上できるので、好ましい。
本発明に係る第2ガスバリアー層では、前記一般式(A)で表されるポリシラザンを用いることができる。得られるガスバリアー層の膜としての緻密性の観点からは、一般式(A)中のR1、R2及びR3の全てが水素原子であるパーヒドロポリシラザンが特に好ましい。
本発明に係る第2のガスバリアー層は、ポリシラザンを含む層に真空紫外線を照射する工程で、ポリシラザンの少なくとも一部が酸窒化ケイ素へと改質される。
パーヒドロポリシラザン中のSi-H結合やN-H結合は真空紫外線照射による励起等で比較的容易に切断され、不活性雰囲気下ではSi-Nとして再結合すると考えられる(Siの未結合手が形成される場合もある)。すなわち、酸化することなくSiNy組成として硬化する。この場合はポリマー主鎖の切断は生じない。Si-H結合やN-H結合の切断は触媒の存在や、加熱によって促進される。切断されたHはH2として膜外に放出される。
パーヒドロポリシラザン中のSi-N結合は水により加水分解され、ポリマー主鎖が切断されてSi-OHを形成する。二つのSi-OHが脱水縮合してSi-O-Si結合を形成して硬化する。これは大気中でも生じる反応であるが、不活性雰囲気下での真空紫外線照射中では、照射の熱によって基材からアウトガスとして生じる水蒸気が主な水分源となると考えられる。水分が過剰となると脱水縮合しきれないSi-OHが残存し、SiO2.1~2.3の組成で示されるガスバリアー性の低い硬化膜となる。
真空紫外線照射中、雰囲気下に適当量の酸素が存在すると、酸化力の非常に強い一重項酸素が形成される。パーヒドロポリシラザン中のHやNはOと置き換わってSi-O-Si結合を形成して硬化する。ポリマー主鎖の切断により結合の組み換えを生じる場合もあると考えられる。
真空紫外線のエネルギーはパーヒドロポリシラザン中のSi-Nの結合エネルギーよりも高いため、Si-N結合は切断され、周囲に酸素、オゾン、水等の酸素源が存在すると酸化されてSi-O-Si結合やSi-O-N結合が生じると考えられる。ポリマー主鎖の切断により結合の組み換えを生じる場合もあると考えられる。
e+Xe→Xe*
Xe*+2Xe→Xe2*+Xe
Xe2*→Xe+Xe+hν(172nm)
となり、励起されたエキシマ分子であるXe2*が基底状態に遷移するときに172nmのエキシマ光を発光する。
透明電極2が形成されるフィルム基板4としては、例えば、下記樹脂フィルム等を挙げることができるが、これらに限定されない。好ましく用いられるフィルム基板4としては、透明樹脂フィルムを挙げることができる。
<電極>
本発明の有機エレクトロルミネッセンス(有機EL素子)は、下記の陽極と陰極からなる一対の電極に挟持された有機機能層を有する発光ユニットを有する。以下において、当該電極について、詳細な説明をする。
有機EL素子における陽極としては、仕事関数の大きい(4eV以上)金属、合金、電気伝導性化合物及びこれらの混合物を電極物質とするものが好ましく用いられる。このような電極物質の具体例としては、Au、Ag等の金属、CuI、酸化インジウムスズ(Indium Tin Oxide:ITO)、SnO2、ZnO等の導電性透明材料が挙げられる。
また、IDIXO(In2O3-ZnO)等非晶質で透明導電膜を作製可能な材料を用いてもよい。陽極はこれらの電極物質を蒸着やスパッタリング等の方法により薄膜を形成させ、フォトリソグラフィー法で所望の形状のパターンを形成してもよく、あるいはパターン精度を余り必要としない場合は(100μm以上程度)、上記電極物質の蒸着やスパッタリング時に所望の形状のマスクを介してパターンを形成してもよい。
あるいは、有機導電性化合物のように塗布可能な物質を用いる場合には、印刷方式、コーティング方式等湿式成膜法を用いることもできる。この陽極より発光を取り出す場合には、透過率を10%より大きくすることが望ましく、また陽極としてのシート抵抗は数百Ω/□以下が好ましい。更に膜厚は材料にもよるが、通常10~1000nm、好ましくは10~200nmの範囲で選ばれる。
図1に示すとおり、透明電極2は、フィルム基板4側から、下地層2aと、この上部に成膜された電極層2bとを順に積層した2層構造である。このうち、電極層2bは、銀又は銀を主成分とする合金を用いて構成された層であり、下地層2aは、例えば、窒素原子を含んだ化合物を用いて構成された層である。
なお、透明電極2の透明とは、波長550nmでの光透過率が50%以上であることをいう。
下地層2aは、電極層2bのフィルム基板4側に設けられる層である。下地層2aを構成する材料としては、特に限定されるものではなく、銀又は銀を主成分とする合金からなる電極層2bの成膜に際し、銀の凝集を抑制できるものであればよく、例えば、窒素原子や硫黄原子を含んだ化合物等が挙げられる。
下地層2aが、高屈折率材料(屈折率1.7以上)からなる場合、その層厚の上限としては特に制限はなく、層厚の下限としては上記低屈折率材料からなる場合と同様である。
ただし、単なる下地層2aの機能としては、均一な成膜が得られる必要層厚で形成されれば十分である。
電極層2bは、銀又は銀を主成分とした合金を用いて構成された層であって、下地層2a上に成膜された層である。
このような電極層2bの成膜方法としては、塗布法、インクジェット法、コーティング法、ディップ法等のウェットプロセスを用いる方法や、蒸着法(抵抗加熱、EB法など)、スパッタ法、CVD法等のドライプロセスを用いる方法等が挙げられる。中でも、蒸着法が好ましく適用される。
また、電極層2bは、下地層2a上に成膜されることにより、電極層2b成膜後の高温アニール処理等がなくても十分に導電性を有することを特徴とするが、必要に応じて、成膜後に高温アニール処理等を行ったものであってもよい。
陰極(対向電極)6は、発光ユニット3に電子を供給する陰極(カソード)として機能する電極膜である。陰極としては、仕事関数の小さい(4eV以下)金属(電子注入性金属と称する)、合金、電気伝導性化合物及びこれらの混合物を電極物質とするものが用いられる。
このような電極物質の具体例としては、ナトリウム、ナトリウム-カリウム合金、マグネシウム、リチウム、マグネシウム/銅混合物、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、アルミニウム/酸化アルミニウム(Al2O3)混合物、インジウム、リチウム/アルミニウム混合物、希土類金属等が挙げられる。
これらの中で、電子注入性及び酸化等に対する耐久性の点から、電子注入性金属とこれより仕事関数の値が大きく安定な金属である第二金属との混合物、例えば、マグネシウム/銀混合物、マグネシウム/アルミニウム混合物、マグネシウム/インジウム混合物、アルミニウム/酸化アルミニウム(Al2O3)混合物、リチウム/アルミニウム混合物、アルミニウム等が好適である。
陰極はこれらの電極物質を蒸着やスパッタリング等の方法により薄膜を形成させることにより、作製することができる。また、陰極としてのシート抵抗は数百Ω/□以下が好ましく、膜厚は通常10nm~5μm、好ましくは50~200nmの範囲で選ばれる。なお、発光した光を透過させるため、有機EL素子の陽極又は陰極のいずれか一方が透明又は半透明であれば発光輝度が向上し好都合である。
また、陰極に上記金属を1~20nmの膜厚で作製した後に、陽極の説明で挙げた導電性透明材料をその上に作製することで、透明又は半透明の陰極を作製することができ、これを応用することで陽極と陰極の両方が透過性を有する素子を作製することができる。
なお、この有機EL素子100が、陰極(対向電極)6側からも発光光hを取り出すものである場合であれば、上述した導電性材料のうち光透過性の良好な導電性材料を選択して対向電極6を構成すればよい。
補助電極15は、透明電極2の抵抗を下げる目的で設けるものであって、透明電極2の電極層2bに接して設けられることが好ましい。補助電極15を形成する材料は、金、白金、銀、銅、アルミニウム等の抵抗が低い金属が好ましい。これらの金属は光透過性が低いため、光取り出し面13aからの発光光hの取り出しの影響のない範囲でパターン形成される。
取り出し電極16は、透明電極2と外部電源とを電気的に接続するものであって、その材料としては特に限定されるものではなく公知の素材を好適に使用できるが、例えば、3層構造からなるMAM電極(Mo/Al・Nd合金/Mo)等の金属膜を用いることができる。
本発明に係る発光ユニットとは、少なくとも、後述する各種有機化合物を含有する、発光層、正孔輸送層、電子輸送層等の有機機能層を主体として構成される発光体(単位)をいう。当該発光体は、陽極と陰極からなる一対の電極の間に挟持されており、当該陽極から供給される正孔(ホール)と陰極から供給される電子が当該発光体内で再結合することにより発光する。
本発明で用いられる発光ユニット3は、例えば、陽極(アノード)である透明電極2側から順に正孔注入層3a/正孔輸送層3b/発光層3c/電子輸送層3d/電子注入層3eを積層した構成が例示される。以下において、各層について、詳細に説明する。
本発明に用いられる発光層3cには、発光材料としてリン光発光化合物が含有されている。
なお、発光層3cの層厚の総和とは、発光層3c間に非発光性の中間層が存在する場合には、当該中間層も含む層厚である。
発光層3cに含有されるホスト化合物としては、室温(25℃)におけるリン光発光のリン光量子収率が0.1未満の化合物が好ましい。さらに好ましくはリン光量子収率が0.01未満である。また、発光層3cに含有される化合物の中で、その層中での体積比が50%以上であることが好ましい。
ここでいうガラス転移点(Tg)とは、DSC(Differential Scanning Colorimetry:示差走査熱量法)を用いて、JIS K 7121に準拠した方法により求められる値である。
本発明で用いることのできる発光材料としては、リン光発光性化合物(リン光性化合物、リン光発光材料ともいう。)とケイ光発光性化合物(ケイ光性化合物、ケイ光発光材料ともいう。)が挙げられる。
リン光発光性化合物とは、励起三重項からの発光が観測される化合物であり、具体的には室温(25℃)にてリン光発光する化合物であり、リン光量子収率が25℃において0.01以上の化合物であると定義されるが、好ましいリン光量子収率は0.1以上である。
ケイ光発光性化合物としては、クマリン系色素、ピラン系色素、シアニン系色素、クロコニウム系色素、スクアリウム系色素、オキソベンツアントラセン系色素、フルオレセイン系色素、ローダミン系色素、ピリリウム系色素、ペリレン系色素、スチルベン系色素、ポリチオフェン系色素、又は希土類錯体系蛍光体等が挙げられる。
注入層とは、駆動電圧低下や発光輝度向上のために電極と発光層3cとの間に設けられる層のことで、「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の第2編第2章「電極材料」(123~166頁)に詳細に記載されており、正孔注入層3aと電子注入層3eとがある。
正孔輸送層3bは、正孔を輸送する機能を有する正孔輸送材料からなり、広い意味で正孔注入層3a、電子阻止層も正孔輸送層3bに含まれる。正孔輸送層3bは単層又は複数層設けることができる。
電子輸送層3dは、電子を輸送する機能を有する材料からなり、広い意味で電子注入層3e、正孔阻止層(図示略)も電子輸送層3dに含まれる。電子輸送層3dは単層構造又は複数層の積層構造として設けることができる。
例えば、ニトロ置換フルオレン誘導体、ジフェニルキノン誘導体、チオピランジオキシド誘導体、カルボジイミド、フレオレニリデンメタン誘導体、アントラキノジメタン、アントロン誘導体及びオキサジアゾール誘導体等が挙げられる。さらに、上記オキサジアゾール誘導体において、オキサジアゾール環の酸素原子を硫黄原子に置換したチアジアゾール誘導体、電子吸引基として知られているキノキサリン環を有するキノキサリン誘導体も、電子輸送層3dの材料として用いることができる。さらにこれらの材料を高分子鎖に導入した、又はこれらの材料を高分子の主鎖とした高分子材料を用いることもできる。
阻止層は、上記のように、有機化合物薄膜の基本構成層の他に、必要に応じて設けられるものである。例えば、特開平11-204258号公報、同11-204359号公報及び「有機EL素子とその工業化最前線(1998年11月30日エヌ・ティー・エス社発行)」の237頁等に記載されている正孔阻止(ホールブロック)層がある。
封止材17は、有機EL素子100を覆うものであって、板状(フィルム状)の封止部材で接着剤19によってフィルム基板4側に固定されるものであってもよく、また、封止膜であってもよい。このような封止材17は、有機EL素子100における透明電極2及び対向電極6の端子部分を露出させ、少なくとも発光ユニット3を覆う状態で設けられている。また、封止材17に電極を設け、有機EL素子100の透明電極2及び対向電極6の端子部分と、この電極とを導通させるように構成されていてもよい。
なお、ここでの図示は省略したが、フィルム基板4との間に有機EL素子100及び封止材17を挟んで保護膜若しくは保護板を設けてもよい。この保護膜若しくは保護板は、有機EL素子100を機械的に保護するためのものであり、特に封止材17が封止膜である場合には、有機EL素子100に対する機械的な保護が十分ではないため、このような保護膜若しくは保護板を設けることが好ましい。
ここでは、一例として、図1に示す有機EL素子100の製造方法を説明する。
次に、銀(又は銀を主成分とする合金)からなる電極層2bを、12nm以下、好ましくは4~9nmの層厚になるように、蒸着法等の適宜の方法により下地層2a上に形成し、アノードとなる透明電極2を作製する。同時に、透明電極2端部に、外部電源と接続される取り出し電極16を蒸着法等の適宜の方法に形成する。
以上説明した本発明の有機EL素子100の好ましい態様は、導電性と光透過性とを兼ね備えた透明電極2とフィルム基板4との間に、ガスバリアー層5、光散乱層7及び平滑層1を設けた構成である。これにより、透明電極2とフィルム基板4との間の全反射ロスを低減し、発光効率を向上させることができる。
また、有機EL素子100は、透明電極2を陽極(アノード)として用い、この上部に発光ユニット3と陰極(カソード)となる対向電極6とを設けた構成である。このため、透明電極2と対向電極6との間に十分な電圧を印加して有機EL素子100での高輝度発光を実現しつつ、透明電極2側からの発光光hの取り出し効率が向上することによる高輝度化を図ることが可能である。さらに、所定輝度を得るための駆動電圧の低減による発光寿命の向上を図ることも可能になる。
上述した各構成の有機EL素子100は、上述したように面発光体であるため各種の発光光源として用いることができる。例えば、家庭用照明や車内照明などの照明装置、時計や液晶用のバックライト、看板広告用照明、信号機の光源、光記憶媒体の光源、電子写真複写機の光源、光通信処理機の光源、光センサーの光源等が挙げられるが、これらに限定するものではなく、特にカラーフィルターと組み合わせた液晶表示装置のバックライト、照明用光源としての用途に有効に用いることができる。
本発明の有機EL素子100は、照明装置に応用することができる。
また、平滑層1の平均屈折率は、単独の素材で形成されている場合は、単独の素材の屈折率であり、混合系の場合は、各々の素材固有の屈折率に混合比率を乗じた合算値により算出される計算屈折率である。光散乱層7のバインダー屈折率は、単独の素材で形成されている場合は、単独の素材の屈折率であり、混合系の場合は、各々の素材固有の屈折率に混合比率を乗じた合算値により算出される計算屈折率である。光散乱層7の粒子屈折率についても同様に、単独の素材で形成されている場合は、単独の素材の屈折率であり、混合系の場合は、各々の素材固有の屈折率に混合比率を乗じた合算値により算出される計算屈折率である。光散乱層7の平均屈折率は、各々の素材固有の屈折率に混合比率を乗じた合算値により算出される計算屈折率である。
また、表中の「総厚」は、平滑層1と光散乱層7の合計の厚さを表している。また、表中の「光散乱層」の「粒子径」は、光散乱層で用いた粒子の平均粒子径を表し、複数用いて作製した場合は、平均粒子径が大きい方の粒子の平均粒子径を示している。
[発光パネルNo.1:比較例]
《試料の作製》
(1)フィルム基板及びガスバリアー層の作製
(1-1)フィルム基板
フィルム基板として、二軸延伸ポリエチレンナフタレートフィルム(PENフィルム、厚さ:100μm、幅:350mm、帝人デュポンフィルム(株)製、商品名「テオネックスQ65FA」)を用いた。
フィルム基板の易接着面に、JSR株式会社製 UV硬化型有機/無機ハイブリッドハードコート材 OPSTAR Z7501を塗布、乾燥後の層厚が4μmになるようにワイヤーバーで塗布した後、乾燥条件;80℃、3分で乾燥後、空気雰囲気下、高圧水銀ランプ使用、硬化条件;1.0J/cm2で硬化を行い、下地層(「プライマー層」ともいう。)を形成した。
このときの表面粗さを表す最大断面高さRa(p)は5nmであった。
なお、表面粗さ(算術平均粗さRa)は、AFM(原子間力顕微鏡 Atomic Force Microscope:Digital Instruments社製)を用い、極小の先端半径の触針を持つ検出器で連続測定した凹凸の断面曲線から算出され、極小の先端半径の触針により測定方向が30μmの区間内を3回測定し、微細な凹凸の振幅に関する平均の粗さから求めた。
フィルム基板をCVD装置に装着して、下記の製膜条件(プラズマCVD条件)にてフィルム基板4上に、図5に示す各元素プロファイルとなるように第1ガスバリアー層を300nmの厚さで作製した。
当該第1ガスバリアー層は以下の性質を満たしていた。
(i)ケイ素原子比率、酸素原子比率及び炭素原子比率が、前記第1ガスバリアー層の表面から層厚方向の90%以上の距離領域において、下記序列の大小関係を有する。
(炭素原子比率)<(ケイ素原子比率)<(酸素原子比率)
(ii)炭素分布曲線が少なくとも二つの極値を有する。
(iii)炭素分布曲線における炭素原子比率の最大値及び最小値の差の絶対値が5at%以上である。
(iv)酸素分布曲線において、フィルム基板側の第1ガスバリアー層表面に最も近い酸素分布曲線の極大値が、当該ガスバリアー層内の酸素分布曲線の極大値の中で最大値をとる。
原料ガス(ヘキサメチルジシシロザン(HMDSO、(CH3)6SiO))の供給量:50sccm(Standard Cubic Centimeter per Minute)
酸素ガス(O2)の供給量:500sccm
真空チャンバー内の真空度:3Pa
プラズマ発生用電源からの印加電力:0.8kW
プラズマ発生用電源の周波数:80kHz
フィルムの搬送速度:0.5~1.66m/min
パーヒドロポリシラザン(アクアミカ NN120-10、無触媒タイプ、AZエレクトロニックマテリアルズ(株)製)の10質量%ジブチルエーテル溶液を塗布液とした。
上記塗布液を、ワイヤーバーにて、乾燥後の(平均)層厚が300nmとなるように塗布し、温度85℃、湿度55%RHの雰囲気下で1分間処理して乾燥させ、更に温度25℃、湿度10%RH(露点温度-8℃)の雰囲気下に10分間保持し、除湿処理を行って、第2ガスバリアー層を形成した。
次いで、上記形成したポリシラザン層に対し、下記紫外線装置を用いて、大気圧下でシリカ転化処理を実施した。
装置:株式会社 エム・ディ・コム製エキシマ照射装置MODEL:MECL-M-1-200
照射波長:172nm
ランプ封入ガス:Xe
〈改質処理条件〉
稼動ステージ上に固定したポリシラザン層を形成した基材に対し、以下の条件で改質処理を行って、ガスバリアー層を形成した。
試料と光源の距離:1mm
ステージ加熱温度:70℃
照射装置内の酸素濃度:1.0%
エキシマランプ照射時間:5秒
これら第1のガスバリアー層と第2のガスバリアー層のそれぞれの構成元素の組成又は分布状態は相違していた。
(2-1)光散乱層の作製
基板として、(1)で得られたフィルム基板を50×50mmに切り出し、超純水洗浄、クリーンドライヤーで乾燥したものを用いた。
次いで、光散乱層調液として、屈折率(np)2.4、平均粒子径0.25μmのTiO2粒子(テイカ(株)製 JR600A)と樹脂溶液(APM社製 ED230AL(有機無機ハイブリッド樹脂))との固形分比率が30vol%/70vol%、n-プロピルアセテートとシクロヘキサノンとの溶媒比が10質量%/90質量%、固形分濃度が15質量%となるように、10ml量の比率で処方設計した。
次いで、TiO2分散液を100rpmで撹拌しながら、前記樹脂溶液を少量ずつ混合添加し、添加完了後、500rpmまで撹拌速度を上げ、10分間混合し、光散乱層塗布液を得た。
その後、疎水性PVDF 0.45μmフィルター(ワットマン社製)にて濾過し、目的の分散液を得た。
上記分散液をスピン塗布(500rpm、30秒)にてフィルム基板上に回転塗布した後、簡易乾燥(80℃、2分)し、さらに、加熱(120℃、60分)して、層厚0.5μmの光散乱層を形成した。光散乱層のバインダー(樹脂)の屈折率nbは、1.5、粒子屈折率npは2.4、平均屈折率nsは、1.77であった。
なお、発光パネル1においては、平滑層1の作製は行わなかった。
上記(2)の工程で得られたフィルム基板を、幅20mm×50mmの開口部があるマスクと重ねて市販のスパッタ装置の基板ホルダーに固定し、真空槽を4×10-4Paまで減圧した。次に基板を第一真空層へ移動し、Arガスを導入し、RF-100Wで30秒間表面処理を行った。
次に、処理した基板を真空のままインジウムスズ酸化物(ITO)ターゲットが設置されている第2真空槽に移し、第2真空槽を4×10-4Paまで減圧した後、DC-500Wで130秒間蒸着し、ITOを成膜した。このようにして、20×50mmのパターンのITOからなる透明電極を作製した。
以下、図7を参照して、作製手順を説明する。上記(3)で作製した透明電極を陽極(アノード)として用い、かつ当該陽極上に発光ユニットを設けて、有機EL素子400を作製した。そして、当該有機EL素子400に封止材17を接着させて発光パネル700を作製した。なお、図7に示す有機EL素子400においては、図1に示す有機EL素子100と略同様であり、異なる点を以下に説明する。
まず、(3)で作製した透明電極等が設けられたフィルム基板4を、中央部に幅30mm×30mmの開口部があるマスクと重ねて市販の真空蒸着装置の基板ホルダーに固定した。また真空蒸着装置内の加熱ボートの各々に、発光ユニット3を構成する各材料を、それぞれの層の成膜に最適な量で充填した。なお、加熱ボートはタングステン製抵抗加熱用材料で作製されたものを用いた。
まず、正孔輸送注入材料として下記構造式に示すα-NPDが入った加熱ボートに通電して加熱し、α-NPDよりなる正孔注入層と正孔輸送層とを兼ねた正孔輸送注入層を、透明電極2上に成膜した。この際、蒸着速度0.1~0.2nm/秒、層厚20nmとした。
次いで、正孔阻止材料として下記構造式に示すBAlqが入った加熱ボートに通電して加熱し、BAlqよりなる正孔阻止層3gを、発光層3c上に成膜した。この際、蒸着速度0.1~0.2nm/秒、層厚10nmとした。
次に、電子注入材料としてフッ化カリウムの入った加熱ボートに通電して加熱し、フッ化カリウムよりなる電子注入層3eを、電子輸送層3d上に成膜した。この際、蒸着速度0.01~0.02nm/秒、層厚1nmとした。
その後、有機EL素子400を、大きさ40×40mm、厚さ700μm、中央部34×34mmを深さ350μmのガラス基板からなる封止材17で覆い、有機EL素子400を囲む状態で、封止材17とフィルム基板4との間に接着剤19(シール材)を充填した。接着剤19としては、エポキシ系光硬化型接着剤(東亞合成社製ラックストラックLC0629B)を用いた。封止材17とフィルム基板4との間に充填した接着剤19に対して、ガラス基板(封止材17)側からUV光を照射し、接着剤19を硬化させて有機EL素子400を封止した。
(1)フィルム基板及びガスバリアー層の作製
発光パネルNo.2については、発光パネルNo.1と同様のフィルム基板を用いて、上記(1-1)~(1-3)までの作製工程を同様に行った。
パーヒドロポリシラザン(アクアミカ NN120-10、無触媒タイプ、AZエレクトロニックマテリアルズ(株)製)の10質量%ジブチルエーテル溶液を、塗布液として、ワイヤーバーにて、乾燥後の(平均)層厚が300nmとなるように塗布し、温度85℃、湿度55%RHの雰囲気下で1分間処理して乾燥させ、更に温度25℃、湿度10%RH(露点温度-8℃)の雰囲気下に10分間保持し、除湿処理を行って、ポリシラザン層を形成した。
次いで、上記形成したポリシラザン層に対し、下記紫外線装置を真空チャンバー内に設置して、装置内の圧力を表1に示している値に調整して、シリカ転化処理を実施した。
〈紫外線照射装置〉
装置:株式会社 エム・ディ・コム製エキシマ照射装置MODEL:MECL-M-1-200
照射波長:172nm
ランプ封入ガス:Xe
〈改質処理条件〉
可動ステージ上に固定したポリシラザン層を形成したフィルム基板に対し、以下の条件で改質処理を行って、第2ガスバリアー層を形成した。
エキシマランプ光強度:130mW/cm2(172nm)
試料と光源の距離:1mm
ステージ加熱温度:70℃
照射装置内の酸素濃度:1.0%
エキシマランプ照射時間:5秒
これら第1のガスバリアー層と第2のガスバリアー層のそれぞれの構成元素の組成又は分布状態は相違していた。
(1)フィルム基板及びガスバリアー層の作製
発光パネルNo.3については、発光パネルNo.2と同様のフィルム基板を用いて、発光パネルNo.2の(1-1)~(1-4)の処理を同様に行った。
(2-1)光散乱層の作製
発光パネルNo.3については、発光パネルNo.2と同様に(2-1)の処理は行わず、光散乱層を作製しなかった。
次いで、平滑層調液として、樹脂溶液(APM社製 ED230AL(有機無機ハイブリッド樹脂))を、溶媒比が20質量%/30質量%/50質量%のn-プロピルアセテートとシクロヘキサノンとトルエンに固形分濃度20質量%となるように、10ml量の比率で処方設計した。
具体的には、溶媒を100rpmで撹拌しながら、樹脂を少量ずつ混合添加し、添加完了後、500rpmまで撹拌速度を上げ、10分間混合し、平滑層塗布液を得た。
その後、疎水性PVDF 0.45μmフィルター(ワットマン社製)にて濾過し、目的の分散液を得た。
上記分散液をスピン塗布(500rpm、30秒)にて光散乱層上に回転塗布した後、簡易乾燥(80℃、2分)し、さらに、加熱(120℃、30分)して、層厚0.7μmの平滑層を形成した。
なお、平滑層の平均屈折率nfは、25℃の雰囲気下で、発光ユニットからの発光光の発光極大波長のうち最も短い発光極大波長の光線を照射し、アッベ屈折率計(ATAGO社製、DR-M2)を用いて測定し、1.5であった。
また、表面粗さ(算術平均粗さRa)を測定したところ、Ra=5nmであった。
なお、表面粗さ(算術平均粗さRa)は、前記下地層と同様に、AFM(原子間力顕微鏡 Atomic Force Microscope:Digital Instruments社製)を用い、極小の先端半径の触針を持つ検出器で連続測定した凹凸の断面曲線から算出され、極小の先端半径の触針により測定方向が30μmの区間内を3回測定し、微細な凹凸の振幅に関する平均の粗さから求めた。以下の発光パネルにおいては全て同様に表面粗さ(算術平均粗さRa)を求めた。
(1)フィルム基板及びガスバリアー層の作製
発光パネルNo.4については、発光パネルNo.2と同様のフィルム基板を用いて、発光パネルNo.2の(1-1)~(1-4)の作製工程を同様に行った。
(2-1)光散乱層の作製
基板として、(1)で得られたフィルム基板を50mm×50mmに切り出し、超純水洗浄、クリーンドライヤーで乾燥したものを用いた。
次いで、光散乱層調液として、屈折率(np)2.4、平均粒子径0.5μmのTiO2粒子(テイカ(株)製 JR600A)と樹脂溶液(APM社製 ED230AL(有機無機ハイブリッド樹脂))との固形分比率が30vol%/70vol%、n-プロピルアセテートとシクロヘキサノンとの溶媒比が10質量%/90質量%、固形分濃度が9質量%となるように、10ml量の比率で処方設計した。
具体的には、上記TiO2粒子と溶剤とを混合し、常温で冷却しながら、超音波分散機(エスエムテー社製 UH-50)に、マイクロチップステップ(エスエムテー社製 MS-3 3mmφ)の標準条件で10分間分散を加え、TiO2の分散液を作製した。
次いで、TiO2分散液を100rpmで撹拌しながら、樹脂を少量ずつ混合添加し、添加完了後、500rpmまで撹拌速度を上げ、10分間混合し、光散乱層塗布液を得た。
その後、疎水性PVDF 0.75μmフィルター(ワットマン社製)にて濾過し、目的の分散液を得た。
上記分散液をスピン塗布(500rpm、30秒)にてフィルム基板上に回転塗布した後、簡易乾燥(80℃、2分)し、さらに、加熱(120℃、60分)して、層厚0.3μmの光散乱層を形成した。光散乱層のバインダー(樹脂)の屈折率nbは、1.5、粒子屈折率npは2.4、平均屈折率nsは、1.77であった。
次いで、平滑層調液として、樹脂溶液(APM社製 ED230AL(有機無機ハイブリッド樹脂))を、溶媒比が20質量%/30質量%/50質量%のn-プロピルアセテートとシクロヘキサノンとトルエンに固形分濃度9質量%となるように、10ml量の比率で処方設計した。
具体的には、溶媒を100rpmで撹拌しながら、樹脂を少量ずつ混合添加し、添加完了後、500rpmまで撹拌速度を上げ、10分間混合し、平滑層塗布液を得た。
その後、疎水性PVDF 0.45μmフィルター(ワットマン社製)にて濾過し、目的の分散液を得た。
上記分散液をスピン塗布(500rpm、30秒)にて光散乱層上に回転塗布した後、簡易乾燥(80℃、2分)し、さらに、加熱(120℃、30分)して、層厚0.3μmの平滑層を形成した。
なお、平滑層の平均屈折率nfは、25℃の雰囲気下で、発光ユニットからの発光光の発光極大波長のうち最も短い発光極大波長の光線を照射し、アッベ屈折率計(ATAGO社製、DR-M2)を用いて測定し、1.5であった。
また、表面粗さ(算術平均粗さRa)を測定したところ、Ra=100nmであった。
(1)フィルム基板及びガスバリアー層の作製
発光パネルNo.5については、発光パネルNo.2と同様のフィルム基板を用いて、発光パネルNo.2の(1-1)~(1-4)の作製工程を同様に行った。
(2-1)光散乱層の作製
発光パネルNo.5については、発光パネルNo.1と同様に(2-1)の処理を行って、層厚0.5μmの光散乱層を形成した。光散乱層のバインダー(樹脂)の屈折率nbは、1.5、粒子屈折率npは2.4、平均屈折率nsは、1.77であった。
発光パネルNo.5については、発光パネルNo.3と同様に(2-2)の処理を行って、層厚0.7μmの平滑層を形成した。
なお、平滑層の平均屈折率nfは、25℃の雰囲気下で、発光ユニットからの発光光の発光極大波長のうち最も短い発光極大波長の光線を照射し、アッベ屈折率計(ATAGO社製、DR-M2)を用いて測定し、1.5であった。
また、表面粗さ(算術平均粗さRa)を測定したところ、Ra=5nmであった。
(1)フィルム基板及びガスバリアー層の作製
発光パネルNo.6については、発光パネルNo.2と同様のフィルム基板を用いて、発光パネルNo.2の(1-1)~(1-4)の作製工程を同様に行った。
(2-1)光散乱層の作製
基板として、(1)で得られたフィルム基板を50mm×50mmに切り出し、超純水洗浄、クリーンドライヤーで乾燥したものを用いた。
次いで、光散乱層調液として、平均粒子径0.02μmのナノTiO2分散液(テイカ(株)製 HDT-760T)と樹脂溶液(APM社製 ED230AL(有機無機ハイブリッド樹脂))との固形分比率が34vol%/66vol%で調整した溶液と、屈折率1.5、平均粒子径0.1μmのSiO2粒子(堺化学工業社製 Sciqas)と樹脂溶液(APM社製 ED230AL(有機無機ハイブリッド樹脂))とを加え、固形分比率が10vol%/90vol%、n-プロピルアセテートとシクロヘキサノンとの溶媒比が10質量%/90質量%、固形分濃度が15質量%となるように、10ml量の比率で処方設計した。
具体的には、上記TiO2粒子と溶剤とを混合し、常温で冷却しながら、超音波分散機(エスエムテー社製 UH-50)に、マイクロチップステップ(エスエムテー社製 MS-3 3mmφ)の標準条件で10分間分散し、TiO2の分散液を調製した。
次いで、TiO2分散液を100rpmで撹拌しながら、前記樹脂溶液を少量ずつ混合添加し、添加完了後、500rpmまで撹拌速度を上げ、10分間混合し、光散乱層塗布液を得た。
その後、疎水性PVDF 0.45μmフィルター(ワットマン社製)にて濾過し、目的の分散液を得た。
上記分散液をスピン塗布(500rpm、30秒)にてフィルム基板上に回転塗布した後、簡易乾燥(80℃、2分)し、さらに加熱(120℃、60分)して、層厚0.5μmの光散乱層を形成した。光散乱層のバインダー(樹脂)の屈折率nbは、1.8、粒子屈折率npは1.5、平均屈折率nsは、1.77であった。
次いで、平滑層調液として、平均粒子径0.02μmのナノTiO2分散液(テイカ(株)製 HDT-760T)と樹脂溶液(APM社製 ED230AL(有機無機ハイブリッド樹脂))との固形分比率が39vol%/61vol%、n-プロピルアセテートとシクロヘキサノンとトルエンとの溶媒比が20質量%/30質量%/50質量%、固形分濃度が20質量%となるように、10ml量の比率で処方設計した。
具体的には、上記ナノTiO2分散液と溶剤を混合し、100rpmで撹拌しながら、樹脂を少量ずつ混合添加し、添加完了後、500rpmまで撹拌速度を上げ、10分間混合し、平滑層塗布液を得た。
その後、疎水性PVDF 0.45μmフィルター(ワットマン社製)にて濾過し、目的の分散液を得た。
上記分散液をスピン塗布(500rpm、30秒)にて光散乱層上に回転塗布した後、簡易乾燥(80℃、2分)し、さらに、加熱(120℃、30分)して、層厚0.7μmの平滑層を形成した。
なお、平滑層の屈折率nfは、25℃の雰囲気下で、発光ユニットからの発光光の発光極大波長のうち最も短い発光極大波長の光線を照射し、アッベ屈折率計(ATAGO社製、DR-M2)を用いて測定し、1.85であった。
また、表面粗さ(算術平均粗さRa)を測定したところ、Ra=5nmであった。
(1)フィルム基板及びガスバリアー層の作製
発光パネルNo.7については、発光パネルNo.2と同様のフィルム基板を用いて、発光パネルNo.2の(1-1)~(1-4)の処理を同様に行った。
(2-1)光散乱層の作製
基板として、(1)で得られたフィルム基板を50mm×50mmに切り出し、超純水洗浄、クリーンドライヤーで乾燥したものを用いた。
次いで、光散乱層調液として、平均粒子径0.02μmのナノTiO2分散液(テイカ(株)製 HDT-760T)と樹脂溶液(APM社製 ED230AL(有機無機ハイブリッド樹脂))との固形分比率が22vol%/78vol%で調整した溶液と、屈折率(np)2.4、平均粒子径0.25μmのTiO2粒子(テイカ(株)製 JR600A)と樹脂溶液(APM社製 ED230AL(有機無機ハイブリッド樹脂))とを加え、固形分比率が10vol%/90vol%、n-プロピルアセテートとシクロヘキサノンとの溶媒比が10質量%/90質量%、固形分濃度が15質量%となるように、10ml量の比率で処方設計した。
具体的には、上記TiO2粒子と溶剤とを混合し、常温で冷却しながら、超音波分散機(エスエムテー社製 UH-50)に、マイクロチップステップ(エスエムテー社製 MS-3 3mmφ)の標準条件で10分間分散し、TiO2の分散液を調製した。
次いで、TiO2分散液を100rpmで撹拌しながら、樹脂を少量ずつ混合添加し、添加完了後、500rpmまで撹拌速度を上げ、10分間混合し、光散乱層塗布液を得た。
その後、疎水性PVDF 0.45μmフィルター(ワットマン社製)にて濾過し、目的の分散液を得た。
上記分散液をスピン塗布(500rpm、30秒)にてフィルム基板上に回転塗布した後、簡易乾燥(80℃、2分)し、さらに、加熱(120℃、60分)して、層厚0.5μmの光散乱層を形成した。光散乱層のバインダー(樹脂)の屈折率nbは、1.7、粒子屈折率npは2.4、平均屈折率nsは、1.77であった。
発光パネルNo.7については、発光パネルNo.6の上記(2-2)の工程と同様に行って、層厚0.7μmの平滑層を形成した。
なお、平滑層の屈折率nfは、25℃の雰囲気下で、発光ユニットからの発光光の発光極大波長のうち最も短い発光極大波長の光線を照射し、アッベ屈折率計(ATAGO社製、DR-M2)を用いて測定し、1.85であった。
また、表面粗さ(算術平均粗さRa)を測定したところ、Ra=5nmであった。
(1)フィルム基板及びガスバリアー層の作製
発光パネルNo.8については、発光パネルNo.2と同様のフィルム基板を用いて、発光パネルNo.2の(1-1)~(1-4)の作製工程を同様に行った。
(2-1)光散乱層の作製
発光パネルNo.8については、発光パネルNo.1と同様に(2-1)の作製工程を行って、層厚0.5μmの光散乱層を形成した。光散乱層のバインダー(樹脂)の屈折率nbは、1.5、粒子屈折率npは2.4、平均屈折率nsは、1.77であった。
発光パネルNo.8については、発光パネルNo.6の上記(2-2)の作製工程と同様に行って、層厚0.7μmの平滑層を形成した。
なお、平滑層の屈折率nfは、25℃の雰囲気下で、発光ユニットからの発光光の発光極大波長のうち最も短い発光極大波長の光線を照射し、アッベ屈折率計(ATAGO社製、DR-M2)を用いて測定し、1.85であった。
また、表面粗さ(算術平均粗さRa)を測定したところ、Ra=5nmであった。
(1)フィルム基板及びガスバリアー層の作製
発光パネルNo.9については、発光パネルNo.2と同様のフィルム基板を用いて、発光パネルNo.2の(1-1)~(1-4)の作製工程を同様に行った。
(2-1)光散乱層の作製
発光パネルNo.9については、発光パネルNo.1と同様に(2-1)の作製工程を行って、層厚0.5μmの光散乱層を形成した。光散乱層のバインダー(樹脂)の屈折率nbは、1.5、粒子屈折率npは2.4、平均屈折率nsは、1.77であった。
発光パネルNo.9については、発光パネルNo.6の上記(2-2)の作製工程と同様に行って、層厚0.7μmの平滑層を形成した。
なお、平滑層の屈折率nfは、25℃の雰囲気下で、発光ユニットからの発光光の発光極大波長のうち最も短い発光極大波長の光線を照射し、アッベ屈折率計(ATAGO社製、DR-M2)を用いて測定し、1.85であった。
また、表面粗さ(算術平均粗さRa)を測定したところ、Ra=5nmであった。
(1)フィルム基板及びガスバリアー層の作製
発光パネルNo.10については、発光パネルNo.2と同様のフィルム基板を用いて、発光パネルNo.2の(1-1)~(1-4)の作製工程を同様に行った。
(2-1)光散乱層の作製
基板として、(1)で得られたフィルム基板を50mm×50mmに切り出し、超純水洗浄、クリーンドライヤーで乾燥したものを用いた。
次いで、光散乱層調液として、屈折率(np)2.4、平均粒子径0.5μmのTiO2粒子(テイカ(株)製 JR600A)と樹脂溶液(APM社製 ED230AL(有機無機ハイブリッド樹脂))との固形分比率が30vol%/70vol%、n-プロピルアセテートとシクロヘキサノンとの溶媒比が10質量%/90質量%、固形分濃度が15質量%となるように、10ml量の比率で処方設計した。
具体的には、上記TiO2粒子と溶剤とを混合し、常温で冷却しながら、超音波分散機(エスエムテー社製 UH-50)に、マイクロチップステップ(エスエムテー社製 MS-3 3mmφ)の標準条件で10分間分散を加え、TiO2の分散液を作製した。
次いで、TiO2分散液を100rpmで撹拌しながら、樹脂を少量ずつ混合添加し、添加完了後、500rpmまで撹拌速度を上げ、10分間混合し、光散乱層塗布液を得た。
その後、疎水性PVDF 0.45μmフィルター(ワットマン社製)にて濾過し、目的の分散液を得た。
上記分散液をスピン塗布(1500rpm、30秒)にてフィルム基板上に回転塗布した後、簡易乾燥(80℃、2分)し、さらに、加熱(120℃、60分)して、層厚0.3μmの光散乱層を形成した。光散乱層のバインダー(樹脂)の屈折率nbは、1.5、粒子屈折率npは2.4、平均屈折率nsは、1.77であった。
発光パネルNo.10については、発光パネルNo.3の(2-2)と同様の処理を行って、表1に示す層厚0.7μm、表面粗さ(算術平均粗さRa)がRa=50nmとなるように平滑層を形成した。
なお、平滑層の平均屈折率nfは、25℃の雰囲気下で、発光ユニットからの発光光の発光極大波長のうち最も短い発光極大波長の光線を照射し、アッベ屈折率計(ATAGO社製、DR-M2)を用いて測定し、1.5であった。
発光パネルNo.10については、発光パネルNo.1の上記(3)~(5)の作製工程と同様に行って、発光パネルを作製した。
(1)フィルム基板及びガスバリアー層の作製
発光パネルNo.11については、発光パネルNo.2と同様のフィルム基板を用いて、発光パネルNo.2の(1-1)~(1-4)の作製工程を同様に行った。
(2-1)光散乱層の作製
発光パネルNo.11については、発光パネルNo.1と同様に(2-1)の処理を行って、層厚0.5μmの光散乱層を形成した。光散乱層のバインダー(樹脂)の屈折率nbは、1.5、粒子屈折率npは2.4、平均屈折率nsは、1.77であった。
次いで、平滑層調液として、平均粒子径0.02μmのジルコニアゾル(日産化学工業社製 OZ-S30M)と樹脂溶液(APM社製 ED230AL(有機無機ハイブリッド樹脂))との固形分比率が30vol%/70vol%、n-プロピルアセテートとシクロヘキサノンとトルエンとの溶媒比が20質量%/30質量%/50質量%、固形分濃度が20質量%となるように、10ml量の比率で処方設計した。
具体的には、上記ナノTiO2分散液と溶剤を混合し、100rpmで撹拌しながら、樹脂を少量ずつ混合添加し、添加完了後、500rpmまで撹拌速度を上げ、10分間混合し、平滑層塗布液を得た。
その後、疎水性PVDF 0.45μmフィルター(ワットマン社製)にて濾過し、目的の分散液を得た。
上記分散液をスピン塗布(500rpm、30秒)にて光散乱層上に回転塗布した後、簡易乾燥(80℃、2分)し、さらに、加熱(120℃、30分)して、層厚0.7μmの平滑層を形成した。
なお、平滑層の平均屈折率nfは、25℃の雰囲気下で、発光ユニットからの発光光の発光極大波長のうち最も短い発光極大波長の光線を照射し、アッベ屈折率計(ATAGO社製、DR-M2)を用いて測定し、1.65であった。
また、表面粗さ(算術平均粗さRa)を測定したところ、Ra=5nmであった。
発光パネルNo.11については、発光パネルNo.1の上記(3)~(5)の作製工程と同様に行って、発光パネルを作製した。
(1)フィルム基板及びガスバリアー層の作製
発光パネルNo.12については、発光パネルNo.2と同様のフィルム基板を用いて、発光パネルNo.2の(1-1)~(1-4)の処理を同様に行った。
(2-1)光散乱層の作製
基板として、(1)で得られたフィルム基板を50mm×50mmに切り出し、超純水洗浄、クリーンドライヤーで乾燥したものを用いた。
次いで、光散乱層調液として、屈折率(np)1.7、平均粒子径0.1μmの酸化マグネシウム粒子(堺化学工業(株)製 SMOシリーズ)と樹脂溶液(APM社製 ED230AL(有機無機ハイブリッド樹脂))との固形分比率が30vol%/70vol%で調整した溶液と、n-プロピルアセテートとシクロヘキサノンとの溶媒比が10質量%/90質量%、固形分濃度が15質量%となるように、10ml量の比率で処方設計した。
具体的には、上記TiO2粒子と溶剤とを混合し、常温で冷却しながら、超音波分散機(エスエムテー社製 UH-50)に、マイクロチップステップ(エスエムテー社製 MS-3 3mmφ)の標準条件で10分間分散し、TiO2の分散液を調製した。
次いで、TiO2分散液を100rpmで撹拌しながら、樹脂を少量ずつ混合添加し、添加完了後、500rpmまで撹拌速度を上げ、10分間混合し、光散乱層塗布液を得た。
その後、疎水性PVDF 0.45μmフィルター(ワットマン社製)にて濾過し、目的の分散液を得た。
上記分散液をスピン塗布(500rpm、30秒)にてフィルム基板上に回転塗布した後、簡易乾燥(80℃、2分)し、さらに、加熱(120℃、60分)して、層厚0.5μmの光散乱層を形成した。光散乱層のバインダー(樹脂)の屈折率nbは、1.5、粒子屈折率npは1.7、平均屈折率nsは、1.56であった。
発光パネルNo.12については、発光パネルNo.6の上記(2-2)の工程と同様に行って、層厚0.7μmの平滑層を形成した。
なお、平滑層の屈折率nfは、25℃の雰囲気下で、発光ユニットからの発光光の発光極大波長のうち最も短い発光極大波長の光線を照射し、アッベ屈折率計(ATAGO社製、DR-M2)を用いて測定し、1.85であった。
また、表面粗さ(算術平均粗さRa)を測定したところ、Ra=5nmであった。
発光パネルNo.12については、発光パネルNo.1の上記(3)~(5)の工程と同様に行って、発光パネルを作製した。
(1)フィルム基板及びガスバリアー層の作製
発光パネルNo.13については、発光パネルNo.2と同様のフィルム基板を用いて、発光パネルNo.2の(1-1)~(1-4)の処理を同様に行った。
(2-1)光散乱層の作製
基板として、(1)で得られたフィルム基板を50mm×50mmに切り出し、超純水洗浄、クリーンドライヤーで乾燥したものを用いた。
次いで、光散乱層調液として、屈折率(np)1.7、平均粒子径0.1μmの酸化マグネシウム粒子(堺化学工業(株)製 SMOシリーズ)と樹脂溶液(APM社製 ED230AL(有機無機ハイブリッド樹脂))との固形分比率が50vol%/50vol%で調整した溶液と、n-プロピルアセテートとシクロヘキサノンとの溶媒比が10質量%/90質量%、固形分濃度が15質量%となるように、10ml量の比率で処方設計した。
具体的には、上記TiO2粒子と溶剤とを混合し、常温で冷却しながら、超音波分散機(エスエムテー社製 UH-50)に、マイクロチップステップ(エスエムテー社製 MS-3 3mmφ)の標準条件で10分間分散し、TiO2の分散液を調製した。
次いで、TiO2分散液を100rpmで撹拌しながら、樹脂を少量ずつ混合添加し、添加完了後、500rpmまで撹拌速度を上げ、10分間混合し、光散乱層塗布液を得た。
その後、疎水性PVDF 0.45μmフィルター(ワットマン社製)にて濾過し、目的の分散液を得た。
上記分散液をスピン塗布(500rpm、30秒)にてフィルム基板上に回転塗布した後、簡易乾燥(80℃、2分)し、さらに、加熱(120℃、60分)して、層厚0.5μmの光散乱層を形成した。光散乱層のバインダー(樹脂)の屈折率nbは、1.5、粒子屈折率npは1.7、平均屈折率nsは、1.6であった。
発光パネルNo.13については、発光パネルNo.6の上記(2-2)の工程と同様に行って、層厚0.7μmの平滑層を形成した。
なお、平滑層の屈折率nfは、25℃の雰囲気下で、発光ユニットからの発光光の発光極大波長のうち最も短い発光極大波長の光線を照射し、アッベ屈折率計(ATAGO社製、DR-M2)を用いて測定し、1.85であった。
また、表面粗さ(算術平均粗さRa)を測定したところ、Ra=5nmであった。
発光パネルNo.13については、発光パネルNo.1の上記(3)~(5)の工程と同様に行って、発光パネルを作製した。
(6)評価
得られた発光パネル(照明装置)No.1~13を用いて下記の評価を行った。
積分球を用いて一定電流における光束を測定した。具体的には、20A/m2の定電流密度で全光束を測定し、発光パネルNo.2に対しての相対値を表2に示した。
得られた発光パネルNo.1~13を温度60℃/相対湿度90%RH雰囲気において保存し、発光状態を観察した。具体的には、試験開始前に比較して、500時間経過後、発光面積の減少(シュリンク)の進行を観察し、結果を表2に示した。なお、発光面積の端部が100μm以上収縮した場合をシュリンク有として、それ未満の場合をシュリンク無とした。
得られた発光パネルNo.1~13について各発光パネルを五つ用いて、一定電流(100A/m2)で駆動し、連続通電試験を行った。初期輝度が半減する前にショートした発光パネルの数を表2に示した。
1 平滑層
2 陽極(透明電極)
2a 下地層
2b 電極層
3 発光ユニット
4 フィルム基板
5 ガスバリアー層
6 陰極(対向電極)
7 光散乱層
700 照明装置(発光パネル)
Claims (10)
- フィルム基板上に、少なくとも、ガスバリアー層、平滑層及び一対の電極に挟持された有機機能層を有する発光ユニットが、この順に、積層された有機エレクトロルミネッセンス素子であって、前記ガスバリアー層が、構成元素の組成又は分布状態が相違する少なくとも2種のガスバリアー層で構成されていることを特徴とする有機エレクトロルミネッセンス素子。
- 前記平滑層の前記発光ユニット側の表面の算術平均粗さRaが、0.5~50nmの範囲内であることを特徴とする請求項1に記載の有機エレクトロルミネッセンス素子。
- 前記ガスバリアー層と前記平滑層の間に光散乱層を有することを特徴とする請求項1又は請求項2に記載の有機エレクトロルミネッセンス素子。
- 前記平滑層の平均屈折率が、前記発光ユニットからの発光光の発光極大波長のうち最も短い発光極大波長において、1.65以上であることを特徴とする請求項1から請求項3までのいずれか一項に記載の有機エレクトロルミネッセンス素子。
- 前記平滑層が、二酸化チタンを含有していることを特徴とする請求項1から請求項4までのいずれか一項に記載の有機エレクトロルミネッセンス素子。
- 前記光散乱層の平均屈折率が、前記発光ユニットからの発光光の発光極大波長のうち最も短い発光極大波長において、1.6以上であることを特徴とする請求項3から請求項5までのいずれか一項に記載の有機エレクトロルミネッセンス素子。
- 前記光散乱層が、前記発光ユニットからの発光光の発光極大波長のうち最も短い発光極大波長において、1.6以下の屈折率を有するバインダーと、1.8以上の屈折率を有する無機粒子を含有していることを特徴とする請求項3から請求項6までのいずれか一項に記載の有機エレクトロルミネッセンス素子。
- 前記少なくとも2種のガスバリアー層のうち、1種のガスバリアー層が、無機ケイ素化合物の反応生成物である二酸化ケイ素を含有していることを特徴とする請求項1から請求項7までのいずれか一項に記載の有機エレクトロルミネッセンス素子。
- 前記少なくとも2種のガスバリアー層のうち、いずれかのガスバリアー層が、有機ケイ素化合物の反応生成物を含有していることを特徴とする請求項1から請求項8までのいずれか一項に記載の有機エレクトロルミネッセンス素子。
- 請求項1から請求項9までのいずれか一項に記載の有機エレクトロルミネッセンス素子が具備されていることを特徴とする照明装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/763,048 US20150380681A1 (en) | 2013-02-12 | 2014-02-10 | Organic electroluminescent element and lighting device |
KR1020157021418A KR101828662B1 (ko) | 2013-02-12 | 2014-02-10 | 유기 일렉트로루미네센스 소자 및 조명 장치 |
JP2015500224A JP6274199B2 (ja) | 2013-02-12 | 2014-02-10 | 有機エレクトロルミネッセンス素子及び照明装置 |
CN201480008101.1A CN104982091B (zh) | 2013-02-12 | 2014-02-10 | 有机电致发光元件及照明装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013-024641 | 2013-02-12 | ||
JP2013024641 | 2013-02-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2014126037A1 true WO2014126037A1 (ja) | 2014-08-21 |
Family
ID=51354040
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2014/053028 WO2014126037A1 (ja) | 2013-02-12 | 2014-02-10 | 有機エレクトロルミネッセンス素子及び照明装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20150380681A1 (ja) |
JP (1) | JP6274199B2 (ja) |
KR (1) | KR101828662B1 (ja) |
CN (1) | CN104982091B (ja) |
WO (1) | WO2014126037A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105390617A (zh) * | 2014-08-22 | 2016-03-09 | 柯尼卡美能达株式会社 | 有机电致发光元件 |
JP2016046064A (ja) * | 2014-08-22 | 2016-04-04 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子 |
JP2020024930A (ja) * | 2018-03-28 | 2020-02-13 | 堺ディスプレイプロダクト株式会社 | 有機el表示装置及びその製造方法 |
JPWO2019202738A1 (ja) * | 2018-04-20 | 2020-09-24 | 堺ディスプレイプロダクト株式会社 | 有機elデバイスおよびその製造方法 |
US11114517B2 (en) | 2018-03-28 | 2021-09-07 | Sakai Display Products Corporation | Organic EL display apparatus and method of manufacturing organic EL display apparatus |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105453697B (zh) * | 2013-08-14 | 2018-04-17 | 吉坤日矿日石能源株式会社 | 发光元件及发光元件的制造方法 |
KR102387751B1 (ko) * | 2015-03-11 | 2022-04-15 | 삼성전자주식회사 | 배리어 필름 및 이를 포함하는 양자점-폴리머 복합체 물품 |
US11246480B2 (en) | 2015-09-07 | 2022-02-15 | Plasmatica Ltd. | Preventing fog on a medical device viewport |
US11896204B2 (en) | 2015-09-07 | 2024-02-13 | Plasmatica Ltd. | Methods and systems for providing plasma treatments to optical surfaces |
US11896203B2 (en) | 2015-09-07 | 2024-02-13 | Plasmatica Ltd. | Methods and systems for providing plasma treatments to optical surfaces |
CN105319199A (zh) * | 2015-12-02 | 2016-02-10 | 肖白玉 | 一种石油开采地下管道***及其制作方法 |
US11046886B2 (en) * | 2017-09-14 | 2021-06-29 | Sumitomo Chemical Company, Limited | Method for producing liquid composition |
US10892296B2 (en) | 2017-11-27 | 2021-01-12 | Seoul Viosys Co., Ltd. | Light emitting device having commonly connected LED sub-units |
US10892297B2 (en) | 2017-11-27 | 2021-01-12 | Seoul Viosys Co., Ltd. | Light emitting diode (LED) stack for a display |
JPWO2020085248A1 (ja) * | 2018-10-23 | 2021-09-16 | 住友化学株式会社 | 積層体、フレキシブル電子デバイスおよび積層体の製造方法 |
CN111384278B (zh) * | 2018-12-29 | 2021-07-16 | Tcl科技集团股份有限公司 | 一种量子点发光二极管及其制备方法 |
CN110212119A (zh) * | 2019-05-21 | 2019-09-06 | 南昌航空大学 | 镁铝合金电极量子点发光二极管 |
CA3216142A1 (en) * | 2021-04-22 | 2022-10-27 | Shuki Wolfson | Methods and systems for providing plasma treatments to optical surfaces |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011238355A (ja) * | 2010-05-06 | 2011-11-24 | Konica Minolta Holdings Inc | ガスバリア性フィルム、及び有機光電変換素子、有機エレクトロルミネッセンス素子 |
JP2012025099A (ja) * | 2010-07-27 | 2012-02-09 | Fujifilm Corp | ガスバリアフィルムおよび電子デバイス |
JP2012509203A (ja) * | 2008-11-17 | 2012-04-19 | スリーエム イノベイティブ プロパティズ カンパニー | 傾斜組成物バリア |
JP2012076403A (ja) * | 2010-10-05 | 2012-04-19 | Konica Minolta Holdings Inc | バリア性フィルム及び有機電子デバイス |
JP2012084307A (ja) * | 2010-10-08 | 2012-04-26 | Sumitomo Chemical Co Ltd | 有機el装置 |
JP2012178268A (ja) * | 2011-02-25 | 2012-09-13 | Mitsubishi Chemicals Corp | 有機電界発光素子、有機電界発光モジュール、有機電界発光表示装置、及び有機電界発光照明 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006123306A (ja) * | 2004-10-28 | 2006-05-18 | Dainippon Printing Co Ltd | ガスバリア性積層体 |
US20080176041A1 (en) * | 2005-03-10 | 2008-07-24 | Konica Minolta Holdings, Inc | Resin Film Substrate for Organic Electroluminescence and Organic Electroluminescence Device |
JP5066814B2 (ja) * | 2005-03-11 | 2012-11-07 | 三菱化学株式会社 | エレクトロルミネッセンス素子及び照明装置 |
LT2474545T (lt) * | 2005-12-13 | 2017-02-27 | Incyte Holdings Corporation | Heteroarilu pakeisti pirolo[2,3-b]piridinai ir pirolo[2,3-b]pirimidinai kaip janus kinazės inhibitoriai |
JP5010556B2 (ja) * | 2007-08-27 | 2012-08-29 | パナソニック株式会社 | 有機el発光素子 |
CN102387920B (zh) * | 2009-04-09 | 2015-01-07 | 住友化学株式会社 | 气体阻隔性层叠膜 |
JP5717035B2 (ja) * | 2009-06-02 | 2015-05-13 | エージェンシー フォー サイエンス,テクノロジー アンド リサーチ | 多層バリアフィルム |
JP5646478B2 (ja) * | 2009-07-17 | 2014-12-24 | 三井化学株式会社 | 積層体およびその製造方法 |
CN103025518B (zh) * | 2010-07-27 | 2014-10-15 | 柯尼卡美能达控股株式会社 | 气体阻隔性膜、气体阻隔性膜的制造方法及电子器件 |
JP5754912B2 (ja) * | 2010-10-18 | 2015-07-29 | 富士フイルム株式会社 | 光取り出しシート、有機電界発光装置及びその製造方法 |
US9603268B2 (en) * | 2010-11-19 | 2017-03-21 | Konica Minolta, Inc. | Gas barrier film, method of producing a gas barrier film, and electronic device |
JP5832087B2 (ja) * | 2010-12-10 | 2015-12-16 | キヤノン株式会社 | 撮像装置 |
JP5958346B2 (ja) * | 2010-12-13 | 2016-07-27 | コニカミノルタ株式会社 | ガスバリア積層体の製造方法 |
CN102569667B (zh) * | 2011-01-31 | 2014-11-12 | 南京第壹有机光电有限公司 | 一种高效发光的电致发光器件 |
EP2498583B1 (fr) * | 2011-03-07 | 2017-05-03 | Zedel | Lampe LED dotée d' un dispositif de sécurité |
JP5546480B2 (ja) * | 2011-03-08 | 2014-07-09 | 株式会社東芝 | 有機電界発光素子及びその製造方法 |
KR101587330B1 (ko) * | 2012-11-30 | 2016-02-02 | 주식회사 엘지화학 | 유기전자소자용 기판 |
-
2014
- 2014-02-10 JP JP2015500224A patent/JP6274199B2/ja active Active
- 2014-02-10 WO PCT/JP2014/053028 patent/WO2014126037A1/ja active Application Filing
- 2014-02-10 CN CN201480008101.1A patent/CN104982091B/zh not_active Expired - Fee Related
- 2014-02-10 US US14/763,048 patent/US20150380681A1/en not_active Abandoned
- 2014-02-10 KR KR1020157021418A patent/KR101828662B1/ko active IP Right Grant
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012509203A (ja) * | 2008-11-17 | 2012-04-19 | スリーエム イノベイティブ プロパティズ カンパニー | 傾斜組成物バリア |
JP2011238355A (ja) * | 2010-05-06 | 2011-11-24 | Konica Minolta Holdings Inc | ガスバリア性フィルム、及び有機光電変換素子、有機エレクトロルミネッセンス素子 |
JP2012025099A (ja) * | 2010-07-27 | 2012-02-09 | Fujifilm Corp | ガスバリアフィルムおよび電子デバイス |
JP2012076403A (ja) * | 2010-10-05 | 2012-04-19 | Konica Minolta Holdings Inc | バリア性フィルム及び有機電子デバイス |
JP2012084307A (ja) * | 2010-10-08 | 2012-04-26 | Sumitomo Chemical Co Ltd | 有機el装置 |
JP2012178268A (ja) * | 2011-02-25 | 2012-09-13 | Mitsubishi Chemicals Corp | 有機電界発光素子、有機電界発光モジュール、有機電界発光表示装置、及び有機電界発光照明 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016046066A (ja) * | 2014-08-22 | 2016-04-04 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子 |
JP2016046064A (ja) * | 2014-08-22 | 2016-04-04 | コニカミノルタ株式会社 | 有機エレクトロルミネッセンス素子 |
US10074825B2 (en) | 2014-08-22 | 2018-09-11 | Konica Minolta, Inc. | Organic electroluminescent element |
CN105390617A (zh) * | 2014-08-22 | 2016-03-09 | 柯尼卡美能达株式会社 | 有机电致发光元件 |
US11114517B2 (en) | 2018-03-28 | 2021-09-07 | Sakai Display Products Corporation | Organic EL display apparatus and method of manufacturing organic EL display apparatus |
JP2020024930A (ja) * | 2018-03-28 | 2020-02-13 | 堺ディスプレイプロダクト株式会社 | 有機el表示装置及びその製造方法 |
US11758774B2 (en) | 2018-03-28 | 2023-09-12 | Sakai Display Products Corporation | Organic EL display apparatus with suppressed color and/or luminance non-uniformity and method of manufacturing organic EL display apparatus |
JP2021114470A (ja) * | 2018-04-20 | 2021-08-05 | 堺ディスプレイプロダクト株式会社 | 有機elデバイスの製造方法 |
JP7076027B2 (ja) | 2018-04-20 | 2022-05-26 | 堺ディスプレイプロダクト株式会社 | 有機elデバイスの製造方法 |
JPWO2019202738A1 (ja) * | 2018-04-20 | 2020-09-24 | 堺ディスプレイプロダクト株式会社 | 有機elデバイスおよびその製造方法 |
US11950488B2 (en) | 2018-04-20 | 2024-04-02 | Sakai Display Products Corporation | Organic electroluminescent device and method for producing same |
JP2021182555A (ja) * | 2019-10-11 | 2021-11-25 | 堺ディスプレイプロダクト株式会社 | 有機el表示装置及びその製造方法 |
JP7139504B2 (ja) | 2019-10-11 | 2022-09-20 | 堺ディスプレイプロダクト株式会社 | 有機el表示装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPWO2014126037A1 (ja) | 2017-02-02 |
CN104982091B (zh) | 2018-03-13 |
KR101828662B1 (ko) | 2018-02-12 |
US20150380681A1 (en) | 2015-12-31 |
JP6274199B2 (ja) | 2018-02-07 |
KR20150104196A (ko) | 2015-09-14 |
CN104982091A (zh) | 2015-10-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6274199B2 (ja) | 有機エレクトロルミネッセンス素子及び照明装置 | |
WO2015083660A1 (ja) | 有機エレクトロルミネッセンス素子 | |
JP6288086B2 (ja) | 有機発光素子 | |
WO2014142036A1 (ja) | ガスバリアフィルム、ガスバリアフィルムの製造方法、及び、有機エレクトロルミネッセンス素子 | |
WO2016063869A1 (ja) | 光取り出し基板、光取り出し基板の製造方法、有機エレクトロルミネッセンス素子、及び、有機エレクトロルミネッセンス素子の製造方法 | |
JP2022010127A (ja) | ガスバリアフィルムの製造方法、透明導電部材の製造方法、及び、有機エレクトロルミネッセンス素子の製造方法 | |
JP2016219254A (ja) | ガスバリアフィルム、透明導電部材、及び、有機エレクトロルミネッセンス素子 | |
WO2016163215A1 (ja) | 有機エレクトロルミネッセンス素子 | |
WO2014185392A1 (ja) | 有機エレクトロルミネッセンス素子 | |
JP6424513B2 (ja) | 有機エレクトロルミネッセンス素子 | |
WO2014148595A1 (ja) | 有機エレクトロルミネッセンス素子及び照明装置 | |
WO2015178245A1 (ja) | 有機エレクトロルミネッセンス素子 | |
WO2014196329A1 (ja) | 有機エレクトロルミネッセンス素子 | |
WO2014126063A1 (ja) | 有機エレクトロルミネッセンス素子、及び、有機エレクトロルミネッセンス素子の製造方法 | |
JP2016054097A (ja) | 有機エレクトロルミネッセンス素子、及び、基板 | |
JP2015170443A (ja) | 有機エレクトロルミネッセンス素子及びその製造方法 | |
JP2016190442A (ja) | ガスバリアフィルム、透明導電部材、及び、有機エレクトロルミネッセンス素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 14751674 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2015500224 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 14763048 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref document number: 20157021418 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 14751674 Country of ref document: EP Kind code of ref document: A1 |